WO2015192392A1 - 湿刻蚀设备及方法 - Google Patents

湿刻蚀设备及方法 Download PDF

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Publication number
WO2015192392A1
WO2015192392A1 PCT/CN2014/081031 CN2014081031W WO2015192392A1 WO 2015192392 A1 WO2015192392 A1 WO 2015192392A1 CN 2014081031 W CN2014081031 W CN 2014081031W WO 2015192392 A1 WO2015192392 A1 WO 2015192392A1
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WO
WIPO (PCT)
Prior art keywords
storage tank
glass substrate
liquid storage
clamping mechanism
wet etching
Prior art date
Application number
PCT/CN2014/081031
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English (en)
French (fr)
Inventor
柴立
Original Assignee
深圳市华星光电技术有限公司
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Publication of WO2015192392A1 publication Critical patent/WO2015192392A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to the field of liquid crystal display manufacturing, and in particular, to a wet etching apparatus and a corresponding method. Background technique
  • TFT-LCD thin film transistor liquid crystal display
  • the array substrate of the current thin film transistor liquid crystal display Due to the limitation of wet etching equipment and process, the array substrate of the current thin film transistor liquid crystal display (CTFT-LCD) has a relatively serious color (darkness) unevenness due to poor uniformity (mim i ⁇ problem. It can be adjusted by the process) changing the parameter or mode to improve etching uniformity problems typical wet etch mode mode e.g. spray (spray), impregnated mode (d ip) and the like.
  • spray spray
  • d ip impregnated mode
  • Spray mode refers to a method in which an etching liquid is sprayed onto a glass substrate through a nozzle to perform I*; and a dip mode (dip) refers to immersing a glass substrate in a liquid storage tank containing an etching liquid. The way of etching.
  • an improved wet etching apparatus and a corresponding method are proposed, which enable flexible and targeted selection or combination of different wet etching modes, which significantly alleviates the problem of color unevenness, thereby improving the problem.
  • the display effect of the product is proposed, which enable flexible and targeted selection or combination of different wet etching modes, which significantly alleviates the problem of color unevenness, thereby improving the problem.
  • the present invention provides a wet etching apparatus comprising: a shower device capable of spraying an etching liquid; a liquid storage tank capable of storing an etching liquid; and a clamping mechanism for holding a glass substrate to be etched
  • the clamping mechanism is disposed adjacent to an inner wall of the sidewall of the liquid storage tank, and the side of the glass substrate having the optical film layer is capable of receiving an etching liquid from the shower device.
  • the clamping mechanism is movable along a depth direction of the liquid storage tank, and correspondingly moves the glass substrate along a depth direction of the liquid storage tank.
  • two modes of wet etching can be simultaneously performed on the glass substrate.
  • the lower the position of the clamping mechanism the more significant the effect of the immersion mode.
  • the weaker the effect of the spray mode the full impregnation mode is achieved until the etchant has not entered a certain depth.
  • the clamping mechanism comprises: a clamp on a side of the glass substrate facing away from a bottom of the liquid storage tank; and a support on a side of the glass substrate facing the bottom of the liquid storage tank Hold the piece.
  • the clamping mechanism further includes a clamp rotating shaft, and an axial direction of the clamp rotating shaft is perpendicular to a depth direction of the liquid storage tank, parallel to an extending direction of a sidewall of the liquid storage tank adjacent thereto,
  • the clamp is rotatable about the jig axis.
  • the clamp and the holder are each configured as a plate body having a flat surface extending from a position adjacent to a sidewall of the liquid storage tank, and an axis perpendicular to the rotation axis of the clamp In the direction of the direction, the size of the holder is greater than the size of the corresponding clamp. In this way, the load caused by the clamp is small, and the holding member can also distribute the load pressure to a large area.
  • the jig is rotatable between a position parallel to and conforming to the glass substrate and a position perpendicular to the glass substrate, the holder being perpendicular to a side wall of the liquid storage tank.
  • the glass substrate can be fixed to prevent undesired shaking or shaking; when the jig is located perpendicular to the glass substrate, It will block the insertion and removal of the glass substrate.
  • the clamping mechanism is configured to move by one or more of a track, a chain, a top cymbal, an electromagnetic component, or a card slot located on an inner wall of a sidewall of the reservoir.
  • the liquid storage tank has a rectangular shape as viewed from a plan view, and the clamping mechanism is disposed at equal intervals on the long side and the short side of the rectangular shape. This arrangement is more conducive to maintaining the static balance of the glass substrate.
  • a transport roller is disposed at a lower portion of the liquid storage tank, and the liquid storage tank is moved by the transport roller.
  • the reservoir can be moved by a transport roller so that the treated glass substrate can be moved inside the chamber of the entire apparatus.
  • the invention also proposes a wet etching method, which comprises:
  • the clamping mechanism moves in the depth direction toward the bottom of the liquid reservoir such that the glass substrate is immersed in the etching liquid in the liquid storage tank -
  • the clamping mechanism moves away from the bottom of the liquid storage tank in the depth direction, so that the glass substrate is separated from the etching liquid in the liquid storage tank and is received.
  • An etchant from the shower device is not limited to
  • step d) for the same glass substrate, the positions of the clamping mechanisms on opposite sides of the same in the depth direction of the liquid storage tank are different to tilt the glass substrate. Therefore, a part of the glass substrate can be etched by the spray mode, and another part of the area can be etched by the immersion mode. Thereby, the etching strength can be adjusted for different portions of one glass substrate to ensure uniformity.
  • the improved wet etching I* device and the corresponding method applicable to the thin film transistor liquid crystal display (TFT-LCD) array substrate according to the present invention can improve the process optimization space of the wet etching device, and further cooperate by different modes. Improve the uniformity of the wet etching process, solve or at least alleviate the problem of mura, and improve the quality of the liquid crystal display.
  • FIG. 1 is a schematic view showing a wet etching apparatus according to the present invention, in which the position of wet etching in a spray mode is performed;
  • Figure 2 is a view schematically showing a wet etching apparatus according to the present invention, in which a position where wet etching is performed in an immersion mode;
  • Figure 3 shows a partial top view of a wet etching apparatus in accordance with the present invention.
  • Fig. 1 schematically shows a wet etching apparatus 100 according to the present invention, in which the position of wet etching in a spray mode is shown.
  • the glass substrate 15 is implemented as an array substrate of a thin film transistor liquid crystal display (TFT-LCD).
  • TFT-LCD thin film transistor liquid crystal display
  • the side on which the optical film layer to be etched is applied is directed upward.
  • the wet etching apparatus 100 according to the present invention can be applied to any glass substrate having a process similar to that of an array substrate of a thin film transistor liquid crystal display (TFT-LCD), because The glass substrate must have the disadvantage of uneven etching (especially uneven etching of the four corners) due to the same or similar device design.
  • the wet engraving apparatus 100 includes a shower device 18 capable of spraying the etching liquid 19.2 and a reservoir 11 capable of storing the etching liquid 19.1.
  • the shower device 18 is capable of spraying the etching liquid 19.2 onto the glass substrate 15 on which the optical film layer is coated on the upper side. In this way, the wet etching process can be completed by the shower device 18 in a shower mode.
  • the spray mode is a method in which an etching liquid is sprayed onto a glass substrate through a nozzle to perform etching, and the shower device 18 can be specifically configured as a nozzle, a shower type, or the like.
  • the wet etching apparatus 100 further includes a chucking mechanism 20 for holding the glass substrate 15 to be etched.
  • the clamping mechanism 20 is disposed adjacent to the inner wall of the side wall of the reservoir 11, and the side of the glass substrate 15 having the optical film layer (implemented in the figure) In the example, the upper side) is capable of receiving the etching liquid 19.2 from the shower device 8.
  • the chucking mechanism 20 is movable in the depth direction of the reservoir I], and accordingly the glass substrate 15 to be etched is also moved in the depth direction of the reservoir 11.
  • the depth direction of the reservoir 1 is indicated by a double-headed arrow D, i.e., the gripping mechanism 20 is movable in two directions (in the present embodiment, the up and down direction of the apparatus) indicated by the double arrow D.
  • the clamping mechanism 20 includes a clamp 14 on a side of the glass substrate 15 facing away from the bottom 11.1 of the reservoir 11, and a bottom portion 1.1 of the glass substrate 15 facing the reservoir 11. Holder 16 on one side.
  • the clamp 14 and the holding member 16 are respectively located on both sides of the glass substrate 15 for fixing it to prevent looseness during the wet etching process (relative to the reservoir II), affecting the process effect or This causes uneven etching, which eventually leads to uneven display.
  • the clamping mechanism 20 further includes a clamp rotating shaft 12 whose axial direction is perpendicular to the depth direction D of the reservoir I] and parallel to the extending direction of the side wall of the reservoir 11 adjacent thereto.
  • the axial direction of the jig 12 is the direction perpendicular to the plane of the paper.
  • the clamp 14 is rotatable about the clamp shaft 12.
  • the jig 14 and the holder 16 are each configured as a plate body having a flat surface extending from a position adjacent to the inner wall of the side wall of the reservoir 11.
  • the configuration of the jig 14 and the holder 16 is selected as a plate having a flat surface because: the plate body can most reduce the size of the clamping mechanism 20 in the depth direction D; secondly, the plate body is rotated very lightly, and Since the contact hoarding is large, the cover is effectively clamped on the glass substrate 15; in addition, because the contact area is large, the plate body is more stable when it is flat, and is less likely to sway, thereby
  • the glass substrate 15 can be in a stable static state with respect to the liquid storage tank 11 during the wet etching process, and the glass substrate 15 is prevented from being excessively or too small in etching intensity due to shaking, thereby causing color unevenness. Phenomenon.
  • the size of the holding member 16 in the direction perpendicular to the axial direction of the jig axis 12 is larger than the dimension of the corresponding jig 14 in the direction of the axial direction of the vertical jaw rotating shaft 12.
  • shaft direction of the jig axis 12 may be a 1.5-2.5 letter of the size of the corresponding jig 14 on the square
  • the size of the holding member 16 located under the glass substrate 15 is set large, and the load force from the glass substrate 15 can be effectively dispersed, so that the holding member 16 is more durable and durable, and is prevented from being overburdened. Strong and deformed and curved.
  • the rule of the jig 4 located above the glass substrate 15 is set small, and the load attached to the jig 14 can be minimized, that is, the jig 14 can clamp the glass substrate 15, but the pair is not increased. The pressure of the holding member 16. In this way, the clamping mechanism 20 can be made more durable overall.
  • the jig 14 is rotatable between a position 13.2 which is parallel and bonded to the glass substrate 15 and a position 13.1 which is perpendicular to the glass substrate 5.
  • the glass substrate 15 is in the process of performing the shower engraving, so that the jig 14 is positioned in parallel and adhered to the position 13.2 of the glass substrate 15.
  • the clamp 14 positioned parallel to and conforming to the position 13.2 of the glass substrate 15 is schematically indicated by a solid line frame at position 13.2; and the fixture is schematically shown in the figure by a dashed box.
  • the jig 14 It is perpendicular to the position 13.1 of the glass substrate 15, because at the moment during the spray etching, the jig 14 is not located at this position. However, when it is necessary to put the glass substrate 15 into the clamping mechanism 20, it is necessary to When the glass substrate 15 is taken out from the clamping mechanism 20, it is necessary to rotate the jig 4 around the jig axis 2 to a position 13.1 perpendicular to the glass substrate 15 indicated by the broken line frame, at which time the jig 14 no longer functions as a clamping function. Then, the glass substrate 15 can be placed or taken out without hindrance.
  • the chucking mechanism 20 can be in the depth direction of the liquid reservoir 11 indicated by the double-headed arrow D (in the present embodiment, the up and down direction of the apparatus 100) ) Move.
  • This can be achieved by a variety of mechanical or electrical structures.
  • the clamping mechanism 20 may be configured to pass through a track, a chain, a ram, an electromagnetic component (which generates a magnetic force in the direction D) disposed along the depth direction D of the reservoir 11, or an inner wall of the sidewall of the reservoir 1
  • the above card slot or the like moves, so that some specific implementations described above are used alone, or may be combined with each other in various ways.
  • the position of the raising and lowering of the clamping mechanism 20 can be controlled by an electronic program or by manually operating the mechanical structure.
  • Fig. 1 the liquid level of the etching liquid 19. in the liquid storage tank 11 is schematically shown by a broken line. It can be seen that the glass substrate 15 is located above the liquid level of the etching liquid 19.1 and is completely separated from the etching liquid 19.1. At the same time, the etching liquid 19.2 from the shower device 18 is sprayed onto the upper surface of the glass substrate 15. It can be seen that etching is being performed by the spray mode at this time.
  • Fig. 2 schematically shows a wet etching apparatus 100 according to the present invention, which is a position where wet etching is performed in an immersion mode.
  • the liquid level of the etching liquid 19'1 in the liquid storage tank 11 is also schematically shown by a broken line. It can be seen that the glass substrate 15 is located below the liquid level of the etching liquid 19.1, at this time by the dipping mode. To etch.
  • Figure 2 and Figure 2 show only two typical positions. If the position of the clamping mechanism 20 is moved between the positions shown in the two figures, two wet etching modes can be performed simultaneously, Depending on the location, the intensity of the two will be different.
  • FIG. 3 shows a partial top view of a wet etching apparatus 00 in accordance with the present invention (the shower unit 18 is not shown in Figure 3 for clarity).
  • the arrangement of the clamping mechanism 20 can be clearly seen in the cluster 3.
  • FIG. 3 it can be seen from a bird's-eye view that the liquid storage tank 11 has a rectangular shape, and the clamping mechanism 20 is disposed at equal intervals on the long side and the short side of the rectangular shape (in a plan view, the jig 14 and the jig The rotating shaft 12 and the holding member 16 are located at overlapping positions).
  • five clamping mechanisms 20 are arranged along the two opposite long sides of the rectangle, and three clamping mechanisms 20 are arranged along the two opposite short sides of the rectangle.
  • This is not limitative, and the number of gripping mechanisms 20 per side can be reasonably set according to the size and weight of the glass substrate produced. Obviously, it is more advantageous to arrange the clamping mechanisms 20 at equal intervals to maintain the static balance of the glass substrate 15.
  • the lower portion of the liquid storage tank II is provided with a transport roller 17, which can be moved by the transport roller so that the processed glass substrate 5 can be moved inside the chamber of the entire apparatus. To etch the desired part. This assists in the completion of a uniform etch.
  • the present invention also proposes a wet etching method comprising - a) providing a wet etching apparatus 100 in accordance with the present invention.
  • the liquid storage tank 11 can be directly connected to the liquid source, so that before the etching process or during the etching process, The liquid level of the etching liquid 19.1 in the liquid storage tank 11 can be freely controlled as needed.
  • the glass substrate 15 to be etched is held by the clamping mechanism 20. Specifically, it is easy to understand by inserting and removing the glass substrate 15 by rotating the position of the jig 14.
  • the clamping mechanism 20 is controlled to move in the depth direction D toward the bottom portion 11.1 of the liquid storage tank 1, so that the glass substrate 15 is immersed in the liquid storage tank 11
  • the etchant in the 19.1 that is, a certain distance below the liquid level of the etchant 19.1.
  • the glass substrate 15 is no longer etched through the etching liquid 19.1 in the reservoir 11, so that etching is not performed by the immersion mode at this time; and conversely, the etching liquid from the shower device 18 19.2 directly sprayed on the upper surface of the glass substrate 15 having the optical film layer Therefore, at this time, etching is performed by the shower mode.
  • step d) for the same glass substrate 15, the clamping mechanism 20 on the opposite sides of the glass substrate 15 can be made in the depth direction I of the reservoir 11
  • the position on the substrate is different to tilt the glass substrate 15. Therefore, it is possible to cause a part of the glass substrate 15 to be etched by the spray mode, and another part of the area to be etched by the immersion mode. It can be seen that the apparatus and method according to the invention are very flexible and have a high degree of freedom of operation.
  • the inclination along the diagonal of the glass substrate 15 may be caused, that is, the glass substrate A corner of 15 is sunk into the engraving solution 19.1.
  • This solution can be especially used to overcome the problem of uneven etching of the four corners of the glass substrate in the prior art.
  • the immersion mode and the spray mode are not the same.
  • the extreme case at the two extreme positions has just been described in connection with Figures 1 and 2, and if the position of the clamping mechanism 20 is moved between the positions shown in the two figures, two wet etchings can be performed simultaneously.
  • Awkward mode The higher the position is, the more significant the effect of the immersion mode is, and the weaker the effect of the immersion mode is until the spray mode is completely implemented. Similarly, the lower the position, the more significant the effect of the immersion mode, and the weaker the effect of the spray mode.
  • the dip mode is fully implemented until a certain depth of the etching solution is entered.
  • TFT-LCD thin film transistor liquid crystal display
  • etching and spray mode etching can be coordinated and flexibly selected, thereby making up for the uncontrollable defects of the positional strength of the device in the prior art, further improving the uniformity of the wet etching process, solving or at least alleviating the color.
  • the problem of uneven imura has improved the quality of the liquid crystal display, which has brought about a very significant improvement.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

一种湿刻蚀设备，其包括能够喷淋刻蚀液的喷淋装置，能够存储刻蚀液的储液槽，以及用于夹持待刻蚀的玻璃基板的夹持机构，其中，所述夹持机构能够沿所述储液槽的深度方向运动，并相应地带动所述玻璃基板沿所述储液槽的深度方向运动；一种湿刻蚀方法，根据所述湿刻蚀设备，可以对玻璃基板同时进行或选择性地进行两种湿刻蚀的模式，且每种模式刻蚀力度可控。

Description

湿刻蚀设备及方法 相关申请的交叉引用
本申请要求享有于 2014年 6月 19日提交的名称为 "湿刻蚀设备及方法" 的 中国专利申请 CN201410276096.4的优先权， 该申请的全部内容通过引用并入本 文中。 技术领域
本发明涉及液晶显示器制造领域， 尤其涉及一种湿刻蚀设备及相应的方法。 背景技术
隨着信息社会的发展， 对显示设备的要求越来越高， 因而也推动了液晶面板 行业的快速发展。 面板尺寸越做越大， 使用者对视角、 能耗、 显示品质等方面的 要求也越来越高， 对薄膜晶体管液晶显示器 (TFT-LCD)生产工艺及相关的设备也 提出了更高的要求。
由于受到湿刻蚀设备和制程的限制，目前的薄膜晶体管液晶显示器 CTFT-LCD) 的阵列基板因均一性不佳导致了较为严重的颜色 （深浅） 不均 (mim i^题。 可以 通过调整制程参数或改变刻蚀模式来改善均一性问题。 典型的湿刻蚀模式例如喷 淋模式 (spray)、 浸渍模式 (dip)等。
喷淋模式 (spray)指通过喷嘴将刻蚀液喷淋到玻璃基板上来进行刻 I*的方式； 而浸渍模式 (dip)指将玻璃基板浸没到装有刻蚀液的储液槽中来进行刻蚀的方式。
两种模式各有利弊， 但由于受到设备本身设计的限制， 总地来讲， 每种模式 都会造成色不均现象。 旦一旦将玻璃基板置入相应的刻蚀设备中， 就只能采用相 应的模式进行刻蚀， 无法灵活和有针对性地选择或结合不同的湿刻饨模式， 致使 色不均问题始终无法得到有效的改善， 典型地例如目前存在的阵列基板的四角色 不均 (mura)现象。 发明内容 如上所述， 由于受到设备本身设 t的限制， 在现有技术中， 通过喷淋模式或 浸渍模式来进行湿刻蚀， 都会导致一定程度的色不均问题。 因而在本发明中， 提 出了一种改进的湿刻蚀设备及相应的方法， 使得能够灵活且有针对性地选择或结 合不同的湿刻蚀模式， 显著缓解了色不均问题， 进而提升了产品的显示效果。
本发明提出了一种湿刻蚀设备， 其包括： 能够喷淋刻蚀液的喷淋装置； 能够 存储刻蚀液的储液槽； 以及用于夹持待刻蚀的玻璃基板的夹持机构， 所述夹持机 构与所述储液槽的侧壁内壁相邻地设置， 并使得所述玻璃基板的具有光学膜层的 一侧能够承接来自所述喷淋装置的刻蚀液，
其中， 所述夹持机构能够沿所述储液槽的深度方向运动， 并相应地带动所述 玻璃基板沿所述储液槽的深度方向运动。
以此方式， 在根据本发明的设备中， 可以对玻璃基板同时进行两种湿刻蚀的 模式。夹持机构的位置越靠上， 喷淋模式的作用越显著， 浸渍模式的作用越微弱， 直至完全实施喷淋模式； 同理， 夹持机构的位置越靠下， 浸渍模式的作用越显著， 喷淋模式的作用越微弱， 直至没入刻蚀液一定深度后完全实施浸渍模式。
优选地， 所述夹持机构包括： 位于所述玻璃基板的背离所述储液槽的底部的 一侧的夹具； 以及位于所述玻璃基板的朝向所述储液槽的底部的一侧的托持件。
优选地， 所述夹持机构还包括夹具转轴， 所述夹具转轴的轴向方向垂直于所 述储液槽的深度方向， 平行于与其相邻的所述储液槽的侧壁的延伸方向， 所述 夹具能够围绕所述夹具转轴转动。
优选地， 所述夹具和所述托持件均构造为从与所述储液槽的侧壁相邻的位置 处延伸出来的具有平坦表面的板体， 且在垂直于所述夹具转轴的轴向方向的方向 上， 所述托持件的尺寸大于相应的所述夹具的尺寸。 如此设计， 夹具所造成的负 载压力较小， 而托持件亦可将所承受的负载压力分散到较大的面积中。
优选地， 所述夹具能够在平行且贴合亍所述玻璃基板的位置和垂直于所述玻 璃基板的位置之间转动， 所述托持件垂直于所述储液槽的侧壁。 以此方式， 当夹 具位于平行 ϋ贴合于所述玻璃基板的位置时， 可以固定住玻璃基板， 防止其发生 不期望的晃动或抖动； 当夹具位于垂直于所述玻璃基板的位置时， 不会阻挡放入 和取出玻璃基板。
优选地， 所述夹持机构构造为通过轨道、 链条、 顶杼、 电磁部件或位于所述 储液槽的侧壁内壁上的卡槽中的一种或多种方式来运动。 优选地， 沿俯视视角观测， 所述储液槽为矩形， 在所述矩形的长边和短边上 均等间隔地布置有所述夹持机构。如此设置，更有利于维持玻璃基板的静态平衡。
优选地， 在所述储液槽下部设置有运输辊， 所述储液槽通过所述运输辊进行 移动。 储液槽可通过运输辊来进行移动， 使得所处理的玻璃基板能够在整个设备 的腔室内部移动。
本发明还提出了一种湿刻蚀方法， 其中， 包括：
a) 设置根据本发明所述的湿刻蚀设备；
b) 向所述储液槽中添加设定量的刻蚀液；
c) 通过所述夹持机构将待刻蚀的玻璃基板夹持住；
d) 当需要采用浸渍模式来进行刻蚀时，所述夹持机构沿深度方向朝向所述储 液槽的底部运动， 使得所述玻璃基板浸没于所述储液槽中的刻蚀液中- 当需要采用喷淋模式来进行刻蚀 ^1% 所述夹持机构沿深度方向背离所述储 液槽的底部运动， 使得所述玻璃基板与所述储液槽中的刻蚀液分离并承接来自所 述喷淋装置的刻蚀液。
优选地， 在步骤 d)中， 针对同一个玻璃基板， 其相对两侧的所述夹持机构在 所述储液槽的深度方向上的位置不同， 以使所述玻璃基板倾斜。 因此可以造成玻 璃基板的一部分区域通过喷淋模式来进行刻蚀， 而另一部分区域通过浸渍模式来 进行刻蚀。 从而， 可以针对一个玻璃基板的不同部分进行刻蚀力度的调适， 保证 均匀性。
根据本发明的改进的可用于薄膜晶体管液晶显示器 (TFT- LCD)的阵列基板的 湿刻 I*设备及相应的方法， 可以提升湿刻蚀设备的制程优化空间， 并通过不同模 式的配合而进一步改善湿刻蚀制程均一性，解决或至少缓解了色不均 (mura)问题， 提升了液晶显示器的品质。
上述技术特征可以各种适合的方式组合或由等效的技术特征来替代， 只要能 够达到本发明的目的。 附图说明
在下文中将基于实施例并参考 Pf†图来对本发明进行更详细的描述。 其中； 图 1示意性显示了根据本发明的湿刻蚀设备， 图中为以喷淋模式进行湿刻蚀 的位置； 图 2示意性显示了根据本发明的湿刻蚀设备， 图中为以浸渍模式进行湿刻蚀 的位置； 以及
图 3显示了根据本发明的湿刻蚀设备的局部俯视图。
在附图中， 相同的部件使用相同的 »图标记。 附图并未按照实际的比例。
下面将结合 W图对本发明作进一步说明。
图 1示意性显示了根据本发明的湿刻蚀设备 100， 图中为以喷淋模式进行湿 刻蚀的位置。 在所示的实施例中， 玻璃基板 15 实施为薄膜晶体管液晶显示器 (TFT-LCD)的阵列基板。 在图中， 其涂覆有待刻蚀的光学膜层的一侧朝向上方。 当然，这并非限定性的，本领域技术人员容易理解，根据本发明的湿刻蚀设备 100 可用于任何具有与薄膜晶体管液晶显示器 (TFT- LCD)的阵列基板类似的制程的玻 璃基板， 因为这样的玻璃基板必然由于同样或类似的设备设计而具有刻蚀不均 (尤其是四角刻蚀不均） 的缺陷。
由图 1可看出， 湿刻饨设备 100包括能够喷淋刻蚀液 19.2的喷淋装置 18和 能够存储刻蚀液 19.1的储液槽 11。
喷淋装置 18能够将刻蚀液 19.2喷淋到在上侧涂覆有光学膜层的玻璃基板 15 上。 以此方式， 通过喷淋装置 18可以啧淋模式完成湿刻蚀过程。 喷淋模式 (spray) 即通过喷嘴将刻蚀液喷淋到玻璃基板上来进行刻蚀的方式， 此处喷淋装置 18 可 具体地构造为喷嘴、 花洒型喷射器等。
参照图 1 ,湿刻蚀设备 100还包括用于夹持待刻蚀的玻璃基板 15的夹持机构 20。 从图中可直观而明显地看出， 夹持机构 20与储液槽 11的侧壁内壁相邻地设 置， 并使得玻璃基板 15的具有光学膜层的一侧 （在 »图所示的实施例中为上侧） 能够承接来自喷淋装置 8的刻蚀液 19.2。
在根据本发明的湿刻蚀设备 100中， 夹持机构 20能够沿储液槽 I】的深度方 向运动， 并相应地带动待刻蚀的玻璃基板 15也沿储液槽 11的深度方向运动。 在 图 1中， 储液槽 1 的深度方向通过双向箭头 D来表示， 即夹持机构 20能够沿双 向箭头 D所表示的两个方向 （在本实施例中即设备的上下方向） 移动。
具体地， 参照图 1 , 夹持机构 20包括位于玻璃基板 15的背离储液槽 11的底 部 11.1的一侧的夹具 14, 以及位于玻璃基板 15的朝向储液槽 11的底部 1 1.1的 一侧的托持件 16。 夹具 14和托持件 16分别位于玻璃基板 15的两侧， 用于将其 固定住， 防止其在进行湿刻蚀的过程中 （相对于储液槽 I I 而言） 发生松动， 影 响工艺效果或造成刻蚀不均， 最终导致显示不均。
夹持机构 20还包括夹具转轴 12， 夹具转轴 2的轴向方向垂直于储液槽 I】 的深度方向 D, 且平行于与其相邻的储液槽 11的侧壁的延伸方向。 实际上在图 1 所示的情况中， 夹具转轴 12的轴向方向即与纸面垂直的方向。 夹具 14能够围绕 夹具转轴 12转动。
在 图所示的实施例中， 夹具 14和托持件 16均构造为从与储液槽 11的侧 壁内壁相邻的位置处延伸出来的具有平坦表面的板体。 将夹具 14和托持件 16的 构形选择为具有平坦表面的板体， 是因为： 板体最能够缩减夹持机构 20在深度 方向 D上的尺寸； 其次， 板体旋转起来很轻便， 而因为接触靣积较大， 其盖在玻 璃基板 15 上 ^"可有效地将其夹持住； 另外， 同样因为接触面积较大， 板体在平 置时稳定性更好， 不易发生晃动， 从而使得玻璃基板 15 在湿刻蚀的过程中至少 相对于储液槽 11能够处于稳定的静止状态， 避免了玻璃基板 15由于晃动而使得 局部部位刻蚀力度过大或过小， 从而产生色不均现象。
同时， 在图 1中可明显看出， 托持件 16在垂直于夹具转轴 12的轴向方向的 方向上的尺寸大于相应的夹具 14在垂直亍夹具转轴 12的轴向方向的方向上的尺 寸。 优选地， 托持件 16在垂直于夹具转轴 12的轴 | 方向的方向上的尺寸可以是 相应的夹具 14在垂直于夹具转轴 12的轴向方向的方| 上的尺寸的 1.5-2.5信。如 此设置， 是出于静力学的角度来考虑的。 一方面， 将位于玻璃基板 15 下方的托 持件 16的尺寸设置得较大， 可以有效分散来自玻璃基板 15的负载力， 使得托持 件 16 更持久、 耐用， 并防止其承受过大的 ίΐ强而形变弯曲。 另一方面， 将位于 玻璃基板 15上方的夹具 4的尺才设置得较小， 可以尽可能减小夹具 14所附加 的负载，即使得夹具 14能够夹住玻璃基板 15 ,但又不会增加对托持件 16的压力。 以此方式， 可使得夹持机构 20整体上更持久耐用。
参照图 ， 容易理解， 夹具 14能够在平行且贴合于玻璃基板 15的位置 13.2 和垂直于玻璃基板 5的位置 13.1之间转动。在图 1中， 玻璃基板 15处于进行喷 淋刻饨的过程中， 因此夹具 14位亍平行且贴合于玻璃基板 15的位置 13.2中。 因 此可以在图中看到，在位置 13.2处用实线框示意性显示了位亍平行且贴合于玻璃 基板 15的位置 13.2处的夹具 14; 而在 图中用虚线框示意性显示了夹具 14的 垂直于玻璃基板 15的位置 13.1 , 因为此刻处于喷淋刻蚀的过程中， 夹具 14暂^" 不位于该位置处。 然而在需要将玻璃基板 15放入夹持机构 20中时， 或需要将玻 璃基板 15从夹持机构 20中取出时， 则需要将夹具】4围绕夹具转轴 2旋转至虚 线框所表示的垂直于玻璃基板 15的位置 13.1处,此时夹具 14不再发挥夹持功能， 则玻璃基板 15可无阻碍地放入或取出。
刚刚在上文介绍过， 在根据本发明的湿刻蚀设备 100中， 夹持机构 20能够 沿双向箭头 D所表示的储液槽 11的深度方向 （在本实施例中即设备 100的上下 方向） 移动。 这可通过多种机械或电动的结构来实现。 例如， 夹持机构 20 可构 造为通过沿着储液槽 11的深度方向 D设置的轨道、 链条、 顶杆、 电磁部件 （其 产生的磁力沿方向 D) 或位于储液槽 1 的侧壁内壁上的卡槽等方式来运动， 以是单独采用某种上述具体的实现方式， 也可以采用多种方式相互结合。 而从操 作管理上讲， 可通过电子程序， 或手工操作机械结构来控制夹持机构 20 上升和 下降的位置。
在图 1中， 用虚线示意性显示了储液槽 11中的刻蚀液 19.】 的液位。 可以看 到玻璃基板 15位于刻蚀液 19.1的液位之上， 与刻蚀液 19.1完全分离。 同时， 来 自喷淋装置 18的刻蚀液 19.2喷淋到玻璃基板 15的上表面。可见此时正通过喷淋 模式来进行刻蚀。
图 2示意性显示了根据本发明的湿刻蚀设备 100， 图中为以浸渍模式进行湿 刻蚀的位置。 在图 2中同样用虚线示意性显示了储液槽 11中的刻蚀液 19„1的液 位。 可以看到玻璃基板 15位于的刻蚀液 19.1的液位之下， 此时通过浸渍模式来 进行刻蚀。
当然， 图〗和图 2仅显示了两个典型的位置， 如果将夹持机构 20的位置移 动到两个附图所显示的位置之间， 则可以同时进行两种湿刻蚀的模式， 只是根据 位置的不同， 二者的作用强度会此消彼长。
图 3显示了根据本发明的湿刻蚀设备 00的局部俯视图 （为了清晰起见， 在 图 3中未显示喷淋装置 18)。丛图 3中可清晰地看出夹持机构 20的布置方式。参 照图 3 , 沿俯视视角观测， 可以看到储液槽 11为矩形， 且在所述矩形的长边和短 边上均等间隔地布置有夹持机构 20 (在俯视视角中， 夹具 14、 夹具转轴 12以及 托持件 16位于重叠的位置处）。 在图 3中， 沿着矩形的两个相对的长边均布置有 5个夹持机构 20，而沿着矩形的两个相对的短边均布置有 3个夹持机构 20。当然， 这并非限定性的， 每条边上夹持机构 20 的数量可以根据所生产的玻璃基板的尺 寸、 重量来合理地设置。 显然地， 将夹持机构 20等距间隔地设置更有利亍维持 玻璃基板 15的静态平衡。
再次参照图 1 , 可以看到， 储液槽 I I下部设置有运输辊 17, 储液槽 I】可通 过运输辊 Ί来进行移动， 使得所处理的玻璃基板 5能够在整个设备的腔室内部 移动， 以刻蚀所需的部位。 这可协助完成均匀的刻蚀。
本发明还提出了一种湿刻蚀方法， 包括- a) 设置根据本发明的湿刻蚀设备 100。
b) 向储液槽 11中添加设定量的刻蚀液 19„1。可直接将储液槽 11与液体源相 连， 使得在进行刻蚀处理之前或在进行刻蚀处理的 ϋ程中， 能够根据需要自由地 控制储液槽 11中的刻蚀液 19.1的液位。
c) 通过夹持机构 20将待刻蚀的玻璃基板 15夹持住。具体地可通过旋转夹具 14的位置来放入和取出玻璃基板 15， 这很容易理解。
d)在进行刻蚀的过程中， 当需要采用浸渍模式来进行刻蚀时， 控制夹持机构 20沿深度方向 D朝向储液槽 1的底部 11.1运动， 使得玻璃基板 15浸没于储液 槽 11中的刻蚀液 19.1中 （即位于刻蚀液 19.1的液位之下一定距离） 。
此时， 参照图 2。 由于玻璃基板 15浸没于储液槽 11中的刻蚀液 19.1中， 来 自喷淋装置 18的刻蚀液 19,2喷淋到储液槽 11中的刻蚀液 19.1中， 而并非直接 啧淋到玻璃基板 15的上表面上，因此来自喷淋装置 18的刻饨液 192对玻璃基板 15 影响较小， 此 ^"不通过喷淋模式来进行刻蚀； 而另一方面， 由于玻璃基板 15 的需要刻蚀的光学膜层全部浸没于储液槽 11中的刻 I*液 19, 1中， 刻 I*液 19J与 其发生化学反应从而进行刻蚀， 因此此时可通过浸渍模式来进行刻蚀。
另一方面， 参照图 1。 当需要采用喷淋模式来进行刻蚀^ , 控制夹持机构 20 沿深度方向 [)背离储液槽 1 1的底部 i i.i而运动， 使得玻璃基板 15与储液槽 n 中的刻蚀液 9.1分离 （即位于刻蚀液 19.1 的液位之上一定距离） 并直接承接来 自喷淋装置 18的刻蚀液 19.2。 此时， 玻璃基板 15的位置上升， 玻璃基板 15已 经与储液槽 11中的刻蚀液 9.1分离， 因此储液槽 11中的刻蚀液 9.1不再与玻 璃基板 15 中的光学膜层发生化学作用， 因此玻璃基板 15也不再通过储液槽 11 中的刻蚀液 19.1来刻蚀， 因此此时不通过浸渍模式来进行刻蚀； 而反过来， 来自 喷淋装置 18的刻蚀液 19.2直接喷淋在了玻璃基板 15的具有光学膜层的上表面 上， 因此此时通过喷淋模式来进行刻蚀。
在根据本发明的进一步改进的实施例中， 在歩骤 d)中， 针对同一个玻璃基板 15，可以使位于玻璃基板 15的相对两侧的夹持机构 20在储液槽 11的深度方向 I) 上的位置有所不同， 以使玻璃基板 15倾斜。 因此可以造成玻璃基板 15的一部分 区域通过喷淋模式来进行刻蚀， 而另一部分区域通过浸渍模式来进行刻饨。 可见 根据本发明的设备和方法非常灵活， 操作的自由度很高。
当然， 如果 S条长边和两条短边上的夹持机构 20在储液槽 11的深度方向 D 上的位置均不同， 则会导致沿玻璃基板 15的对角线的倾斜， 即玻璃基板 15的一 角沉入刻饨液 19.1中，此方案可尤其用来克服现有技术中的玻璃基板四角刻蚀不 均的问题。
当然， 在根据本发明的设备 100和相应方法中， 浸渍模式和喷淋模式并非非 此即彼的。 刚刚只是结合图 1和图 2讲述了在两个极端位置时的极端情况， 如果 将夹持机构 20 的位置移动到两个附图所显示的位置之间， 则可以同^进行两种 湿刻饨的模式。 位置越靠上， 啧淋模式的作用越显著， 浸渍模式的作用越微弱， 直至完全实施喷淋模式； 同理， 位置越靠下， 浸渍模式的作用越显著， 喷淋模式 的作用越徵弱， 直至没入刻蚀液一定深度后， 会完全实施浸渍模式。
根据本发明的改进的可用于薄膜晶体管液晶显示器 (TFT- LCD)的阵列基板的 湿刻蚀设备及相应的方法具有许多优点；
可以提升湿刻蚀设备的制程优化空间， 以合理而巧妙的构造， 在一个设备中 集成了浸渍模式刻蚀和喷淋模式刻蚀两种功能， 节省生产空间和运输成本； 同时， 由于浸渍模式刻蚀和喷淋模式刻蚀的力度可以相互协调、 灵活选择， 从而弥补了现有技术中的设备位置力度死板不可控的缺陷， 进一步改善了湿刻蚀 制程均一性， 解决或至少缓解了色不均 imura)问题， 提升了液晶显示器的品质， 带来了非常显著的进歩。
虽然已经参考优选实施例对本发明进行了描述， 但在不脱离本发明的范围的 情况下， 可以对其进行各种改进并且可以用等效物替换其中的部件。 尤其是， 只 要不存在结构冲突， 各个实施例中所提到的各项技术特征均可以任意方式组合起 来。 本发明并不局限于文中公开的特定实施例， 而是包括落入权利要求的范围内 的所有技术方案。

Claims

权利要求书
1 . 一种湿刻蚀设备， 其中， 所述湿刻蚀设备包括：
能够啧淋刻蚀液的喷淋装置；
能够存储刻蚀液的储液槽； 以及
^于夹持待刻蚀的玻璃基板的夹持机构， 所述夹持机构与所述储液槽的侧壁 内壁相邻地设置， 并使得所述玻璃基板的具有光学膜层的一侧能够承接来自所述 喷淋装置的刻蚀液，
其中， 所述夹持机构能够沿所述储液槽的深度方向运动， 并相应地带动所述 玻璃基板沿所述储液槽的深度方向运动。
2. 根据权利要求 1所述的湿刻蚀设备， 其中， 所述夹持机构包括- 位于所述玻璃基板的背离所述储液槽的底部的一侧的夹具； 以及
位于所述玻璃基板的朝向所述储液槽的底部的一侧的托持件。
3. 根据权利要求 2所述的湿刻蚀设备，其中，所述夹持机构还包括夹具转轴， 所述夹具转轴的轴向方向垂直于所述储液槽的深度方 1 , 且平行亍与其相邻的所 述储液槽的侧壁的延伸方向， 所述夹具能够圈绕所述夹具转轴转动。
4. 根据权利要求 3所述的湿刻蚀设备， 其中， 所述夹具和所述托持件均构造 为从与所述储液槽的侧壁相邻的位置处延伸出来的具有平坦表面的板体， 且在垂 直于所述夹具转轴的轴向方向的方向上， 所述托持件的尺寸大于相应的所述夹具 的尺寸。
5. 根据权利要求 4所述的湿刻蚀设备， 其中， 所述夹具能够在平行且贴合于 所述玻璃基板的位置和垂直于所述玻璃基板的位置之间转动， 所述托持件垂直亍 所述储液槽的侧壁。
6. 根据权利要求 5所述的湿刻蚀设备，其中，所述夹持机构构造为通过轨道、 链条、 顶杆、 电磁部件或位于所述储液槽的侧壁内壁上的卡槽中的一种或多种方 式来运动。
7. 根据权利要求 1所述的湿刻蚀设备， 其中， 沿俯视视角观测， 所述储液槽 为矩形， 在所述矩形的长边和短边上均等间隔地布置有所述夹持机构。
8. 根据权利要求 2所述的湿刻蚀设备， 其中， 沿俯视视角观测， 所述储液槽 为矩形， 在所述矩形的长边和短边上均等间隔地布置有所述夹持机构。
9. 根据权利要求 3所述的湿刻蚀设备， 其中， 沿俯视视角观测， 所述储液槽 为矩形， 在所述矩形的长边和短边上均等间隔地布置有所述夹持机构。
10. 根据权利要求 4所述的湿刻蚀设备， 其中， 沿俯视视角观测， 所述储液 槽为矩形， 在所述矩形的长边和短边上均等间隔地布置有所述夹持机构。
11. 根据权利要求 5所述的湿刻蚀设备， 其中， 沿俯视视角观测， 所述储液 槽为矩形， 在所述矩形的长边和短边上均等间隔地布置有所述夹持机构。
12. 根据权利要求 6所述的湿刻蚀设备， 其中， 沿俯视视角观测， 所述储液 槽为矩形， 在所述矩形的长边和短边上均等间隔地布置有所述夹持机构。
13. 根据权利要求 1所述的湿刻蚀设备， 其中， 在所述储液槽下部设置有运 输辊， 所述储液槽通过所述运输辊进行移动。
14, 一种湿刻蚀方法， 其中， 包括；
a) 设置一种湿刻蚀设备， 其包括：
能够喷淋刻蚀液的喷淋装置；
能够存储刻蚀液的储液槽； 以及
用于夹持待刻蚀的玻璃基板的夹持机构， 所述夹持机构与所述储液槽的侧壁 内壁相邻地设置， 并使得所述玻璃基板的具有光学膜层的一侧能够承接来自所述 喷淋装置的刻蚀液，
其中， 所述夹持机构能够沿所述储液槽的深度方向运动， 并相应地带动所述 玻璃基板沿所述储液槽的深度方向运动；
b) 向所述储液槽中添加设定量的刻蚀液；
c) 通 ϋ所述夹持机构将待刻蚀的玻璃基板夹持住- d) 当需要采用浸渍模式来进行刻蚀时，所述夹持机构沿深度方向朝向所述储 液槽的底部运动， 使得所述玻璃基板浸没于所述储液槽中的刻蚀液中- 当需要采用喷淋模式来进行刻蚀^ , 所述夹持机构沿深度方向背离所述 储液槽的底部运动， 使得所述玻璃基板与所述储液槽中的刻蚀液分离并承接来自 所述喷淋装置的刻蚀液。
15. 根据权利要求 14所述的方法，其中，在歩骤 d)中，针对同一个玻璃基板， 其相对两侧的所述夹持机构在所述储液槽的深度方向上的位置不同， 以使所述玻 璃基板倾斜。
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