WO2015188736A1 - 一种基于低维电子等离子体波的太赫兹调制器及其制造方法 - Google Patents
一种基于低维电子等离子体波的太赫兹调制器及其制造方法 Download PDFInfo
- Publication number
- WO2015188736A1 WO2015188736A1 PCT/CN2015/081026 CN2015081026W WO2015188736A1 WO 2015188736 A1 WO2015188736 A1 WO 2015188736A1 CN 2015081026 W CN2015081026 W CN 2015081026W WO 2015188736 A1 WO2015188736 A1 WO 2015188736A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- terahertz
- grating
- cavity
- plasmon
- dimensional electron
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 230000008878 coupling Effects 0.000 claims abstract description 24
- 238000010168 coupling process Methods 0.000 claims abstract description 24
- 238000005859 coupling reaction Methods 0.000 claims abstract description 24
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 238000012546 transfer Methods 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000010494 dissociation reaction Methods 0.000 claims description 2
- 230000005593 dissociations Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 15
- 230000007246 mechanism Effects 0.000 abstract description 9
- 230000001105 regulatory effect Effects 0.000 abstract description 6
- 230000001360 synchronised effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 230000010355 oscillation Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910021389 graphene Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910015800 MoS Inorganic materials 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/213—Fabry-Perot type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/124—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode interdigital
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/101—Ga×As and alloy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/10—Function characteristic plasmon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/15—Function characteristic involving resonance effects, e.g. resonantly enhanced interaction
Definitions
- the present invention relates to a terahertz modulator and a method of fabricating the same, and more particularly to a terahertz modulator capable of realizing a high-speed large modulation depth based on a low-dimensional electron plasma wave and a method of fabricating the same.
- the invention also relates to a modulation method based on the terahertz modulator.
- Terahertz waves have very important applications in electronics, communications, life sciences, defense, aerospace and medical.
- Terahertz functional devices occupy a central position in terahertz systems.
- High-performance modulators play an important role in terahertz high-speed imaging and communication systems.
- the existing technical scheme of the solid-state terahertz modulator is mainly based on the non-resonant absorption mechanism of the terahertz wave caused by the change of the Drude conductivity of the single electron behavior.
- modulators based on semiconductor two-dimensional electron gas, semiconductor composite metamaterials and graphene.
- Two-dimensional electron gas modulator The conductivity of the two-dimensional electron gas is controlled by the gate to change its conductivity, thereby changing the transmission intensity of the incident terahertz radiation.
- the method can work at room temperature, but its maximum modulation depth is only 3%, which is far from the actual application.
- This type of modulator does not utilize plasma wave characteristics.
- the principle is that the transmission intensity of a terahertz wave is related to the electrical conductivity of a two-dimensional electron gas.
- a metamaterial is an artificial medium having an electromagnetic resonance response composed of structural units ("atoms") that are smaller than the wavelength of the excited electromagnetic wave.
- the fabrication of semiconductor composite metamaterials can be adjusted in geometric design and metamaterial electromagnetic structure parameters to change its resonance characteristics. This principle can be used to achieve effective regulation of terahertz radiation.
- a metamaterial is formed on the doped semiconductor epitaxial layer to form a Schottky diode structure, and the resonance intensity is changed by a carrier concentration of a semiconductor substrate layer near a slit of a voltage-modulating Split-Ring Resonator (SRR) structural unit. Therefore, the terahertz wave transmission intensity at the resonance frequency can be achieved by electrical modulation.
- SRR voltage-modulating Split-Ring Resonator
- the method can achieve terahertz modulation with a modulation depth of 50% and a modulation speed of 2 MHz at room temperature.
- Another composite metamaterial structure integrates a high electron mobility transistor (HEMT) at the slit of the SRR, and changes the electron density of the channel by the gate to change the capacitance of the SRR to adjust the SRR resonance intensity.
- the device has a modulation depth of up to 33% and a maximum modulation speed of 10MHz.
- the patented technology of the existing modulator is mainly realized by using metamaterials. For example, in 2009, Houtong Chen et al. applied for a US invention patent called “active terahertz metamaterial device”.
- Graphene Modulator In the terahertz band, the in-band transition of electrons in graphene plays a major role.
- the large-area single-layer graphene can achieve 15% intensity modulation depth at room temperature and a modulation frequency of 20 kHz.
- the modulation depth of the prior art is generally not high, and the highest can only reach 50%, indicating that the energy loss mode of these mechanisms is not very effective; in addition, high-speed modulation is one of the most important performance indicators of the modulator, and the prior art
- the modulation speed is not high (the maximum modulation speed is 10MHz).
- the carrier layer of two-dimensional electron gas and graphene is very thin, the interaction time between electromagnetic wave and carrier is short, and the modulation efficiency is not high if strong coupling is not achieved;
- Drude The dissipation of the conductivity model is caused by external free carriers (phonons, impurities, defects, etc.).
- the electromagnetic wave is coupled with a single particle, so the loss mechanism of the terahertz wave is not very efficient;
- the modulation speed of the large-area device is limited by the parasitic capacitance and resistance of the device, such as the consumption of the semiconductor composite metamaterial plus the gate voltage. Make up the capacitance and resistance.
- the technical problem to be solved by the present invention is to provide a terahertz modulator capable of realizing high speed and large modulation depth, which utilizes the plasmon polariton formed by strong coupling of the terahertz wave cavity mode and the plasma wave mode to achieve Efficient modulation of Hertz waves.
- a possible solution is provided for the modulators necessary for terahertz high-speed imaging and high-speed communication.
- the terahertz modulator of the present invention includes a plasmon and a resonant cavity; wherein
- the plasmons include:
- a high electron mobility transistor of GaN/AlGaN comprising: a source, a drain, and a grating gate;
- the resonant cavity includes a surface of the grating in contact with the sample to a dielectric resonator formed by the lower surface of the thinned sapphire substrate.
- a terahertz modulator as described above, wherein the resonant cavity may be a Fabry-Pérot (abbreviated as F-P) resonator formed by thinning the interface of the sample itself or a symmetric cavity structure composed of the same dielectric layer.
- F-P Fabry-Pérot
- the invention also proposes a high-speed modulation method based on a high electron mobility transistor, comprising:
- the transistor has a grating gate, and the grating gate strongly couples the two-dimensional plasma wave and the terahertz resonant cavity mode in the two-dimensional electron gas to form a plasmon polariton;
- the invention also proposes a manufacturing method of a terahertz modulator, comprising the following steps:
- the back side of the sapphire substrate is thinned and polished to form a resonant cavity structure.
- the invention also discloses a manufacturing method of a terahertz modulator with a symmetric dielectric cavity, comprising the steps of manufacturing a dielectric resonator and bonding the dielectric resonator to a two-dimensional electronic gas chip, wherein the manufacturing medium
- the step of the resonant cavity includes: thinning and polishing the cavity plate material; performing pattern transfer of the wafer bonding region on the cavity plate material; and transferring the flip chip pattern in the bonded metal region.
- the invention has remarkable characteristics. Since the plasma wave in the two-dimensional electron gas is a collective oscillation of electrons, the inherently strong bound electric field can achieve strong coupling with the terahertz wave, so the modulation efficiency of the terahertz wave is high. .
- the loss of the collective oscillation mode of the present invention is more effective than the loss mechanism of single electron behavior, which is advantageous for generating a large modulation depth.
- the plasma wave of two-dimensional electron gas is integrated into the terahertz resonator to achieve strong coupling, and the regulation of the plasmon resonance mode is adopted to achieve efficient control of the resonance mode of the cavity.
- the invention utilizes the plasmon polariton formed by the strong coupling of the terahertz wave cavity mode and the plasma wave mode to realize efficient modulation of the terahertz wave. Modulation at high speed (about 1 GHz) and large modulation depth (70% or more) allows a possible solution for terahertz high-speed imaging and high-speed communication.
- FIG. 1 is a schematic view showing the structure of a terahertz modulator according to the present invention
- FIG. 2 is a schematic diagram of a grating gate in a terahertz modulator of the present invention, wherein FIG. 2a is a one-dimensional grating gate, and FIG. 2b is a interdigital grating gate;
- FIG. 3 is a schematic structural view of a symmetric resonant cavity in a terahertz modulator according to the present invention.
- FIG. 4 is a schematic diagram of biasing of electrodes of the terahertz modulator in an operating state according to the present invention
- Figure 5 is a dispersion curve of plasmon and free space terahertz light
- Figure 6 is a graph showing the two branches ⁇ + and ⁇ - curves of the plasmon excited with the cavity mode to form a plasmon polariton;
- Figure 7 is a calculated eigenmode of the plasmon polaritons
- Figure 9 is a flow chart showing the fabrication of the terahertz modulator of the present invention.
- Figure 10 is a detailed flow chart of a fabrication process of a basic terahertz modulator structure.
- Terahertz modulator A device or device capable of effectively regulating the electromagnetic characteristics (electric field strength or phase) of a terahertz wave.
- Terahertz cavity refers to an electromagnetic medium structure capable of supporting a specific terahertz wave standing wave mode, including a metal waveguide cavity and a dielectric waveguide cavity.
- the Fabry resonator is a metal waveguide resonator or a dielectric waveguide resonator filled with a low-loss dielectric material or vacuum (air).
- the cavity surface can be a metal coating or a medium-air interface with high reflectivity.
- Two-dimensional electron gas (2DEG) The movement of a certain spatial dimension is limited, while in the other two dimensions, it is free to move with a certain concentration of electronic system.
- the solid is generally a quasi-two-dimensional electron layer formed on the side of the narrow band gap semiconductor at the semiconductor heterojunction, such as the GaAs on the GaAs side of the GaAs/AlGaAs heterojunction interface and the GaN at the GaN/AlGaN heterojunction interface.
- Two-dimensional electron gas on one side. Since the electrons in the two-dimensional electron gas in the heterojunction can be spatially separated from the doping impurities, the two-dimensional electron gas has a higher mobility than the carriers in the corresponding semiconductor body material.
- Plasma wave refers to the density fluctuation of the same kind of polar charge in the opposite polarity charge background, has the characteristics of wave, is a collective excitation of charge.
- the quasiparticle of the plasma wave oscillation is a plasmon, which is actually a charge density vibration.
- the swaying element is excited.
- it refers to a charge density oscillating wave in a two-dimensional electron gas of a semiconductor, which is called a two-dimensional plasma wave or a two-dimensional plasmon.
- Ionic Polarization A coherent mixed state formed by strong coupling of cavity photons and matter elements.
- it refers to a mixed state formed by the strong coupling of a two-dimensional electron gas medium and a terahertz resonant cavity mode, which is the eigenstate of the strongly coupled system. It is characterized in that an anti-crossing feature occurs when the plasmon resonates with the cavity mode.
- High Electron Mobility Transistor A field effect transistor fabricated using a semiconductor heterojunction material. Since electrons are separated from the doped regions, electrons in the channel of the transistor have high mobility, so Transistors are called high electron mobility transistors.
- the invention provides a terahertz modulator whose basic principle is based on a resonance absorption mechanism caused by electron collective oscillation (Plasmon, ie, plasma wave), in order to enhance the coupling of terahertz waves and plasmons.
- a HEMT structure with a grating-coupled two-dimensional electron gas is integrated in a terahertz resonator, thereby proposing a terahertz modulator.
- the terahertz modulator of the invention utilizes a strong coupling effect to minimize the transmission coefficient of the cavity mode at the resonance point.
- the oscillation frequency of the plasmon is adjusted so that the system switches between the resonance point and the non-resonance point, the resonance mode of the cavity can be realized. Effective modulation.
- Figure 1 shows the structure of the most basic terahertz modulator device, which mainly includes two units of plasmon and resonator.
- the plasmons include:
- GaN/AlGaN HEMT structure with grating gate including source 1, drain 2, grating gate 3;
- a quasi two-dimensional electron layer formed on one side of the narrow band gap semiconductor at the semiconductor heterojunction that is, a two-dimensional electron gas 4, which is a carrier of the plasma wave 6, or it is used to excite the plasma wave;
- the resonant cavity is a dielectric resonator 5 formed of a thinned sapphire dielectric material.
- the present invention uses a sapphire material as a cavity dielectric material after being thinned.
- the resonant cavity should include a dielectric resonator formed by the surface of the grating in contact with the sample to the lower surface of the substrate.
- a dielectric resonator formed by the surface of the grating in contact with the sample to the lower surface of the substrate.
- the two-dimensional electron gas 4 there is a very thin layer of gate barrier layer, which is also included in the resonance.
- the layer is very thin and the refractive index is very close to the substrate, so it can be collectively referred to as a dielectric resonator.
- the source 1 and the drain 2 can be realized by a conventional ohmic contact process, so that the contact resistance is as small as possible.
- the two-dimensional electron gas formed on the GaN side of the GaAs side at the GaAs/AlGaAs heterojunction interface and the GaN side of the GaN/AlGaN heterojunction interface there are two main parameters for the two-dimensional electron gas formed on the GaN side of the GaAs side at the GaAs/AlGaAs heterojunction interface and the GaN side of the GaN/AlGaN heterojunction interface.
- high electron mobility the higher the mobility, the higher the quality factor of the plasma wave, and the stronger coupling can be achieved.
- the room temperature mobility is on the order of 2000 cm 2 /Vs.
- the highest temperature of the plasmon resonance absorption observed in the experiment is close to 200K.
- the formation of effective plasmon oscillations requires electron mobility of the order of 10000 cm 2 /Vs and above.
- the second parameter is the concentration of high two-dimensional electron gas. The higher the concentration, the better the quality factor is obtained, and the higher the oscillation frequency under other conditions,
- Two-dimensional electron gas materials include: GaAs/AlGaAs, InGaAs/AlGaAs, graphene, MoS 2 and the like.
- the cavity mode electric field 7 is coupled to the bound electric field of the plasma wave 6 via the near field enhancement of the grating to achieve strong coupling.
- the two-dimensional electron gas of the non-gate control region in the structure shown in FIG. 1 may be etched away, for example, by Inductive Coupled Plasma (ICP) etching.
- ICP Inductive Coupled Plasma
- Reference numeral 8 in Fig. 1 denotes an incident terahertz wave, and reference numeral 9 passes through a transmission terahertz wave after the terahertz modulator.
- Figure 2 shows two embodiments of a grating gate in a terahertz modulator of the present invention.
- Figure 2a shows a one-dimensional grating in which the source of the device is S, the drain is D, and the gate is represented by G.
- the gate length is W
- L is the grating period, which is equal to the sum of the gate length and the gate pitch.
- Fig. 2b is an interpolated grating in which the grating G1 has a gate length of W1, the grating G2 has a gate length of W2, and the grating pitch is S.
- the grating acts as a coupling.
- the period must be much smaller than the terahertz wavelength (grating period L ⁇ ⁇ THz / 100).
- the loss of the grating in the terahertz band is small, and the metal of the grating is required.
- the thickness must be greater than the skin depth ( ⁇ 120 nm).
- the role of the grating gate is to regulate the plasma wave by adjusting the grating gate voltage.
- the grating grid also includes a planar two-dimensional grid grating, a concentric circular grating, a terahertz metamaterial, and a periodic structure or pattern of a two-dimensional electronic gas table.
- the resonator structure shown in Figure 1 uses the simplest substrate and belongs to the basic planar resonator. Therefore, the present invention also proposes a symmetric cavity structure composed of a substrate and another piece of the same medium of the same thickness as shown in FIG.
- the dielectric material is selected based on the absorption of terahertz waves as small as possible, and also the requirement for high electron mobility two-dimensional electron gas material heterojunction growth.
- the dielectric material is selected based on the absorption of terahertz waves as small as possible, and also the requirement for high electron mobility two-dimensional electron gas material heterojunction growth.
- sapphire substrates have low absorption of terahertz waves and high mechanical strength, which is more advantageous for processing into smaller-sized resonators.
- the size of the resonant cavity is typically required to be on the order of the wavelength of the band of interest, primarily to facilitate the formation of discrete cavity modes.
- Fabry-Pérot plate cavity may also be a cavity that is coplanar with the two-dimensional electron gas, such as a Co-planar Waveguide (CPW), a slot antenna (Slot Antenna). ) and Terahertz Metamaterial Resonator.
- CPW Co-planar Waveguide
- Slot Antenna slot antenna
- Terahertz Metamaterial Resonator Terahertz Metamaterial Resonator
- the quasi two-dimensional electron layer is an electron in a two-dimensional electron channel of the semiconductor, and the resonance absorption of the terahertz wave is realized by the collective oscillation of the electron, and the absorption is further enhanced by strong coupling with the cavity mode.
- the resonance absorption of terahertz waves is realized by the collective oscillation of electrons in the two-dimensional electron channel, and the absorption is further enhanced by strong coupling with the cavity mode. This physical mechanism is the essence of the present invention.
- 4 to 8 are for explaining in detail the high-speed modulation method based on the high electron mobility transistor HEMT structure proposed by the present invention.
- FIG. 4 is a schematic diagram of voltage biasing during operation of the terahertz modulator of the present invention. As shown in FIG. 4, it is a GaN/AlGaN High Electron Mobility Transistor (HEMT) structure having a grating gate. .
- HEMT High Electron Mobility Transistor
- the modulation principle of the terahertz modulator of the present invention is that the grating strongly couples the plasma wave in the two-dimensional electron gas with the terahertz resonant cavity mode, thereby forming a plasmon polariton.
- the grating gate voltage regulates the resonance conditions of the plasmon and the cavity mode, so that the system switches between the resonance point and the non-resonance point to achieve the purpose of regulating the transmission of the terahertz cavity mode.
- the source and drain are grounded, providing a negative DC gate voltage V G and an AC modulated signal to the gate (amplitude ),As shown in Figure 4.
- the electron concentration is controlled by the gate voltage, and the relationship between the electron concentration and the gate voltage obtained by the gradient channel approximation of the physical model of the device is (where Vth is the threshold voltage at which the electron concentration is depleted, C is the unit capacitance of the gate, ⁇ 0 is the vacuum dielectric constant, ⁇ AlGaN is the dielectric constant of the gate barrier layer, and d is the thickness of the barrier layer , that is, the distance of the two-dimensional electron from the surface of the sample).
- the alternating modulation signal causes the resonant frequency of the plasmon to constantly change.
- the dispersion relation curve of the terahertz wave of the plasmon and the free space is shown in Fig. 5.
- the broken line indicates resonance of both, that is, resonance absorption of plasmons occurs.
- Fabry-Pérot (FP) resonant cavity mode and refractive index of cavity medium Related to the thickness D, the resonance frequency is
- the gate voltage When the gate voltage is regulated, the electron concentration of the two-dimensional electron gas is substantially regulated, so that the gate-controlled plasmon resonates with the cavity mode, and the cavity mode which is the transmission peak is plasmon resonance. Absorbed. Therefore, when the gate voltage is switched between the resonant and non-resonant points, effective modulation of the cavity mode is achieved. This is the basic working principle of the terahertz modulator of the present invention.
- the low temperature time domain transmission spectra of the device demonstrate its great potential as a terahertz modulator.
- the bias diagram of the device during operation At the resonance point, the transmission of the cavity mode is minimal, and when the applied modulation signal adjusts the gate voltage to the non-resonant point, the transmission of the cavity mode is maximized.
- the figure shows the DC operating voltage of the device and the best applied modulated high frequency signal.
- Fig. 8 is a graph showing the transmission coefficient of the cavity mode as a function of the gate voltage when the frequency is 1.07 THz in the experimental results.
- Figure 8 shows the device DC operating gate voltage and the applied high-frequency modulation signal.
- the transmittance has a good linearity with the gate voltage change, that is, the transmittance varies with the gate voltage.
- the change is linear.
- the present invention also provides a method of fabricating a terahertz modulator, including the following steps:
- the back side of the sapphire substrate is thinned and polished to form a resonant cavity structure.
- a two-dimensional electronic gas table adopting ultraviolet exposure technology (referred to as photolithography) to realize pattern transfer of two-dimensional electron gas table surface, and then etching two-dimensional electron gas material by inductively coupled plasma (ICP) to form a device Source area countertop.
- photolithography ultraviolet exposure technology
- ICP inductively coupled plasma
- ohmic contact photolithography, using an electron beam evaporation process, vapor deposition of a ohmic contact multilayer metal structure on a two-dimensional electron gas table surface, after stripping, forming an ohmic contact metal pattern.
- Ti/Al/Ni/Au (20/120/70/100 nm) is generally used.
- annealing was performed at 900 ° C for 30 seconds in a nitrogen atmosphere in a rapid annealing furnace to form a source-drain ohmic contact.
- grating gate photolithography, realize the pattern transfer of the grating structure, evaporate Ti/Au or Ni/Au (20/100nm) by electron beam evaporation, and form a metal grating gate structure after stripping.
- lead electrode photolithography, lead electrode of grating gate, ohmic contact lead electrode and pattern transfer for wafer bonding.
- Ti/Au or Ni/Au (20/300 nm) was evaporated by electron beam evaporation, and after peeling, a corresponding electrode structure was formed.
- the substrate cavity is polished by a thinning machine and a chemical machine, and thinned and polished from the back side of the sample to form a cavity structure, and the thickness after thinning is generally between 100 and 200 microns;
- the lobes form a single grating-coupled two-dimensional electron gas chip: using laser dicing and manual dissociation, the 1.5 cm small square piece is divided into independent 2D electron gas prototype chips of about 6 ⁇ 6 mm 2 size.
- FIG. 3 Another specific structure besides the most basic substrate resonator structure is shown in Figure 3. It is a terahertz modulator with a symmetric dielectric cavity, two symmetric cavities. Sharing a plasmon, that is, a two-dimensional electronic gas chip finally produced in the flow of FIG. 10, symmetrically disposed with another resonant cavity 10, which is "shared" with the resonant cavity of the two-dimensional electronic gas chip. A plasmon. Accordingly, the present invention also provides an embodiment of a method of fabricating a terahertz modulator of such a different resonant cavity.
- the manufacturing method for a terahertz modulator with a symmetric dielectric cavity is as follows:
- a dielectric resonator is added, thereby forming a symmetric dielectric cavity.
- the manufacturing method includes manufacturing the dielectric cavity 10 and the two-dimensional cavity
- the step of bonding the electronic gas chips together, the dielectric resonator described herein refers to the dielectric resonator 10 symmetrically disposed with the two-dimensional electronic gas chip, and the steps of manufacturing the dielectric resonator are briefly described as follows:
- the dielectric resonator prepared through the above steps and the two-dimensional electronic gas chip finally obtained through the steps of FIG. 10 are bonded together to form a terahertz with a symmetric dielectric cavity. Modulator.
- the step of pattern transfer of the wafer bonding region on the cavity plate material is carried out by evaporating Ti/Au or Ni/Au by electron beam evaporation and peeling off the metal regions forming the wafer bonding.
- the step of transferring the flip chip pattern in the bonded metal region is performed by vapor deposition of indium by thermal evaporation and stripping to obtain an indium column required for flip chip bonding.
- the step of bonding the two-dimensional electronic gas chip and the dielectric resonator together can be realized by flip chip bonding technology, that is, the positional relationship between the two is aligned as shown in FIG. 3, and then pressure is applied after heating to pass the two.
- the gold-indium solid solution is combined and finally reflowed in the reflow oven to make the bond stronger.
- the two-dimensional electron gas in the GaN/AlGaN heterojunction has a high electron concentration, and can cover a wider terahertz band through gate regulation;
- the device works for narrowband, it can work at multiple frequency points, and the working frequency and working voltage can be designed according to theory and requirements, so the flexibility of the device is high;
- the sapphire substrate itself has little absorption of terahertz waves, so it is less lossy than doped semiconductors;
- the sapphire substrate is very strong, so the device can be thinned to between 100 and 200 microns without damage and sufficient mechanical strength.
- the present invention is based on a resonance absorption mechanism caused by electron collective oscillations (plasma waves, ie, plasmons, Plasmon).
- a HEMT High Electron Mobility Transistor
- the strong coupling effect makes the transmission coefficient of the cavity mode minimum at the resonance point, and the resonance condition of the plasmon and the cavity mode is controlled by the change of the grating gate voltage to achieve the purpose of regulating the transmission of the terahertz wave.
- the effective modulation of the resonant mode of the resonant cavity is achieved when the oscillating frequency of the plasmon is adjusted such that the system switches between the non-resonant point and the resonant point.
- the invention introduces the physical mechanism and implementation technology of the terahertz modulator in detail, and provides a possible solution for related applications.
- the present invention has outstanding substantial features and significant advances due to the strong coupling of "light” (terahertz waves) and "substance” (plasmon).
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (20)
- 一种基于低维电子等离子体波的太赫兹调制器,包括等离激元和谐振腔;其特征在于,所述等离激元包括:GaN/AlGaN之高电子迁移率晶体管,其包括:源极、漏极和光栅栅极;位于所述晶体管的半导体异质界面处窄带隙半导体一侧形成的准二维电子层,用于激发等离子体波;所述谐振腔,包括光栅与样品接触的表面到经减薄蓝宝石衬底的下表面形成的介质谐振腔。
- 根据权利要求1所述的太赫兹调制器,其中所述光栅栅极为一维光栅或者插指型光栅。
- 根据权利要求1所述的太赫兹调制器,其中所述谐振腔为减薄样品本身界面形成的Fabry-Pérot谐振腔或者由相同介质层组成的对称谐振腔结构。
- 根据权利要求1所述的太赫兹调制器,其中所述光栅栅极还包括平面二维网格光栅、同心圆形光栅、太赫兹超材料光栅。
- 根据权利要求1所述的太赫兹调制器,其中所述谐振腔为二维电子气共面的谐振腔。
- 根据权利要求1所述的太赫兹调制器,所述准二维电子层为半导体二维电子沟道中的电子,利用所述电子的集体振荡来实现对太赫兹波的共振吸收,通过与谐振腔模式强耦合进一步增强吸收。
- 根据权利要求7或8所述的高速调制方法,其中,当等离激元与谐振腔模式共振强耦合时,出现等离极化激元的两分支。
- 一种太赫兹调制器的制造方法,其特征在于,包括步骤如下:步骤一、在GaN/AlGaN二维电子气材料小片上形成器件有源区的二维电子气台面;步骤二、形成源、漏欧姆接触;步骤三、形成光栅栅极;步骤四、形成光栅栅极和欧姆接触的引线电极以及用于晶片键合的图形转移;步骤五、对蓝宝石衬底的背面进行减薄并抛光,以形成谐振腔结构。
- 根据权利要求11所述的太赫兹调制器的制造方法,其中步骤一中,所述GaN/AlGaN二维电子气材料小片,是通过激光划片机将2寸GaN/AlGaN二维电子气原片切成长宽都为1.5厘米的方型小片;所述二维电子气台面则采用紫外曝光技术实现二维电子气台面的图形转移,然后,采用感应耦合等离子体刻蚀二维电子气材料,以形成器件有源区台面。
- 根据权利要求11所述的太赫兹调制器的制造方法,其中步骤二中,进一步包括:光刻,采用电子束蒸发工艺,在二维电子气台面上蒸镀欧姆接触的多层金属结构,经过剥离后,形成欧姆接触金属图形,放置在快速退火炉里进行退火,形成源漏欧姆接触。
- 根据权利要求11所述的太赫兹调制器的制造方法,其中步骤三中所述形成光栅栅极,包括光刻,采用电子束蒸发蒸镀Ti/Au或Ni/Au,经剥离后形成的金属光栅栅极结构;其中步骤四中,引线电极的形成是先用光刻,采用电子束蒸发蒸镀Ti/Au或Ni/Au,经剥离后形成相应的电极结构。
- 根据权利要求11或12所述的太赫兹调制器的制造方法,其中,对样品衬底采用减薄机减薄和化学机械进行抛光,以形成谐振腔结构。
- 根据权利要求11或12所述的太赫兹调制器的制造方法,其中,在步骤五之后,还包括采用激光划片和手工解离,裂片形成单个的光栅耦合二维电子气芯片。
- 一种带有对称介质谐振腔的太赫兹调制器的制造方法,其特征在于,包括制造介质谐振腔和将所述介质谐振腔与二维电子气芯片键合在一起的步骤,其中,所述制造介质谐振腔的步骤包括:对谐振腔平板材料进行减薄并抛光;在谐振腔平板材料上进行晶片键合区的图形转移;在键合的金属区域实现倒装焊图形的转移。
- 根据权利要求17所述的带有对称介质谐振腔的太赫兹调制器的制造方法,其中,所述在谐振腔平板材料上进行晶片键合区的图形转移的步骤,通过电子束蒸发蒸镀Ti/Au或Ni/Au并剥离形成晶片键合的金属区域实现。
- 根据权利要求17所述的带有对称介质谐振腔的太赫兹调制器的制造方法,其中,所述在键合的金属区域进行倒装焊图形的转移的步骤,通过热蒸发蒸镀铟,并剥离得到倒装焊所需铟柱实现。
- 根据权利要求17所述的带有对称介质谐振腔的太赫兹调制器的制造方法,其中,所述将介质谐振腔和二维电子气芯片键合在一起的步骤包括,将两者对准,加热后再施加压力,使二者通过金-铟固熔结合在一起,最后在回流炉里回流。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017516023A JP6431978B2 (ja) | 2014-06-10 | 2015-06-09 | テラヘルツ変調器、高速テラヘルツ波の変調方法及び対称誘電体共振空洞付きのテラヘルツ変調器の製造方法 |
US15/317,669 US9927675B2 (en) | 2014-06-10 | 2015-06-09 | Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410256651.7A CN105204190A (zh) | 2014-06-10 | 2014-06-10 | 一种基于低维电子等离子体波的太赫兹调制器及其制造方法 |
CN201410256651.7 | 2014-06-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015188736A1 true WO2015188736A1 (zh) | 2015-12-17 |
Family
ID=54832908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2015/081026 WO2015188736A1 (zh) | 2014-06-10 | 2015-06-09 | 一种基于低维电子等离子体波的太赫兹调制器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9927675B2 (zh) |
JP (1) | JP6431978B2 (zh) |
CN (1) | CN105204190A (zh) |
WO (1) | WO2015188736A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109217941A (zh) * | 2018-11-27 | 2019-01-15 | 桂林电子科技大学 | 一种透射型太赫兹波编码器及2比特编码系统 |
WO2019076437A1 (fr) | 2017-10-16 | 2019-04-25 | Centre National De La Recherche Scientifique | Capteur de detection avec cellule de captage a transistor a haute mobilite electronique (hemt) et anneaux resonateurs |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10468326B2 (en) * | 2013-06-10 | 2019-11-05 | Purdue Research Foundation | Metamaterial systems and methods for their use |
US11448824B2 (en) * | 2015-03-20 | 2022-09-20 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Devices with semiconductor hyperbolic metamaterials |
US10352856B2 (en) * | 2015-12-14 | 2019-07-16 | Massachusetts Institute Of Technology | Apparatus and methods for spectroscopy and broadband light emission using two-dimensional plasmon fields |
CN106405883A (zh) * | 2016-04-12 | 2017-02-15 | 电子科技大学 | 一种基于高电子迁移率晶体管的频点可调太赫兹波调制器 |
CN106019432B (zh) * | 2016-07-12 | 2018-08-10 | 中国科学院半导体研究所 | 全半导体中红外可调频吸收器 |
US9865692B2 (en) * | 2017-05-04 | 2018-01-09 | University Of Electronic Science And Technology Of China | Spatial terahertz wave phase modulator based on high electron mobility transistor |
CA3070849A1 (en) * | 2017-07-24 | 2019-01-31 | Terahertz Group Ltd. | High frequency optical switch and fabrication methods thereof |
CN107728343B (zh) * | 2017-10-30 | 2020-08-04 | 上海理工大学 | 基于二维电子浓度调制的太赫兹近场辐射增强装置 |
CN108897945B (zh) * | 2018-06-26 | 2022-06-21 | 深港产学研基地 | 计算纳米线场效应晶体管沟道中等离子体波速度的方法 |
CN109524790B (zh) * | 2018-11-06 | 2020-05-05 | 北京大学 | 一种基于f-p腔加载的人工表面等离激元辐射器及控制方法 |
KR102162023B1 (ko) * | 2019-02-12 | 2020-10-06 | 한국과학기술원 | 적외선 방사의 가변 투과율용 나노 필터 및 그 제조 방법 |
CN110346997B (zh) * | 2019-07-08 | 2023-04-07 | 深圳大学 | 一种谐振腔型太赫兹器件及其制备方法 |
CN110426866B (zh) * | 2019-07-18 | 2023-04-07 | 深圳先进技术研究院 | 太赫兹光控调制器、其制备方法及太赫兹成像系统 |
CN110661107A (zh) * | 2019-11-13 | 2020-01-07 | 福州大学 | 基于pe棱镜耦合的可调光栅超材料太赫兹吸波器及方法 |
CN110907075B (zh) * | 2019-12-06 | 2021-06-29 | 云南师范大学 | 一种基于光纤的剪切力探测装置 |
CN110927098B (zh) * | 2019-12-09 | 2023-03-14 | 山东大学 | 一种基于腔模共振的太赫兹传感器及其制备方法 |
FR3115371A1 (fr) * | 2020-10-20 | 2022-04-22 | Marc Grosman | Générateur d’ondes électromagnétiques THz commandé par des transistors à effet de champ. |
CN112701491B (zh) * | 2021-02-02 | 2024-06-11 | 桂林电子科技大学 | 一种基于石墨烯复合超表面的太赫兹可调极化转换器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080004364A (ko) * | 2006-07-04 | 2008-01-09 | 학교법인 포항공과대학교 | 조셉슨 볼텍스 운동을 이용한 테라헤르즈 전자기파 발진 및검출 소자 |
US7376403B1 (en) * | 2005-04-25 | 2008-05-20 | Sandia Corporation | Terahertz radiation mixer |
US20080315216A1 (en) * | 2004-09-13 | 2008-12-25 | Taiichi Otsuji | Terahertz Electromagnetic Wave Radiation Element and Its Manufacturing Method |
CN102483350A (zh) * | 2009-06-03 | 2012-05-30 | 皇家飞利浦电子股份有限公司 | 太赫兹频率范围天线 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2922160B2 (ja) * | 1996-09-17 | 1999-07-19 | 株式会社東芝 | 非線形光デバイス |
JP2004174594A (ja) * | 2002-11-29 | 2004-06-24 | Topcon Corp | 部品の接合方法及び接合構造 |
CN102445711B (zh) * | 2010-09-30 | 2013-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种太赫兹波探测器 |
CN102054891B (zh) * | 2010-10-13 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | 室温太赫兹波探测器 |
JP2012175034A (ja) * | 2011-02-24 | 2012-09-10 | Panasonic Corp | テラヘルツ波素子 |
JP2013030610A (ja) * | 2011-07-28 | 2013-02-07 | Panasonic Corp | テラヘルツ波素子 |
JP5814033B2 (ja) * | 2011-07-29 | 2015-11-17 | 新日本無線株式会社 | 窒化物半導体装置およびその製造方法 |
US8816787B2 (en) * | 2012-07-18 | 2014-08-26 | International Business Machines Corporation | High frequency oscillator circuit and method to operate same |
JP2014158254A (ja) * | 2013-01-16 | 2014-08-28 | Canon Inc | 電磁波発生素子及び検出素子 |
JP2015012212A (ja) * | 2013-07-01 | 2015-01-19 | 株式会社ディスコ | 発光チップ |
-
2014
- 2014-06-10 CN CN201410256651.7A patent/CN105204190A/zh active Pending
-
2015
- 2015-06-09 WO PCT/CN2015/081026 patent/WO2015188736A1/zh active Application Filing
- 2015-06-09 JP JP2017516023A patent/JP6431978B2/ja active Active
- 2015-06-09 US US15/317,669 patent/US9927675B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080315216A1 (en) * | 2004-09-13 | 2008-12-25 | Taiichi Otsuji | Terahertz Electromagnetic Wave Radiation Element and Its Manufacturing Method |
US7376403B1 (en) * | 2005-04-25 | 2008-05-20 | Sandia Corporation | Terahertz radiation mixer |
KR20080004364A (ko) * | 2006-07-04 | 2008-01-09 | 학교법인 포항공과대학교 | 조셉슨 볼텍스 운동을 이용한 테라헤르즈 전자기파 발진 및검출 소자 |
CN102483350A (zh) * | 2009-06-03 | 2012-05-30 | 皇家飞利浦电子股份有限公司 | 太赫兹频率范围天线 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019076437A1 (fr) | 2017-10-16 | 2019-04-25 | Centre National De La Recherche Scientifique | Capteur de detection avec cellule de captage a transistor a haute mobilite electronique (hemt) et anneaux resonateurs |
CN109217941A (zh) * | 2018-11-27 | 2019-01-15 | 桂林电子科技大学 | 一种透射型太赫兹波编码器及2比特编码系统 |
CN109217941B (zh) * | 2018-11-27 | 2023-08-22 | 桂林电子科技大学 | 一种透射型太赫兹波编码器及2比特编码系统 |
Also Published As
Publication number | Publication date |
---|---|
US20170108756A1 (en) | 2017-04-20 |
US9927675B2 (en) | 2018-03-27 |
JP6431978B2 (ja) | 2018-11-28 |
JP2017526015A (ja) | 2017-09-07 |
CN105204190A (zh) | 2015-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015188736A1 (zh) | 一种基于低维电子等离子体波的太赫兹调制器及其制造方法 | |
WO2015039618A1 (zh) | 太赫兹光源芯片、光源器件、光源组件及其制造方法 | |
US9590739B2 (en) | High electron mobility transistor-based terahertz wave space external modulator | |
Liang et al. | Integrated terahertz graphene modulator with 100% modulation depth | |
US8836446B2 (en) | Methods and apparatus for terahertz wave amplitude modulation | |
Sensale-Rodriguez et al. | Graphene for reconfigurable terahertz optoelectronics | |
Degl’Innocenti et al. | Low-bias terahertz amplitude modulator based on split-ring resonators and graphene | |
JP5028068B2 (ja) | アクティブアンテナ発振器 | |
CN108061981A (zh) | 太赫兹调制器及其制备方法 | |
US10830640B2 (en) | Electromagnetic wave detection element, electromagnetic wave sensor, electronic apparatus, and structural body | |
US20220278241A1 (en) | Tuning method for active metamaterials using IGZO Schottky diodes | |
JP2012256867A (ja) | 導波路、該導波路を用いた装置及び導波路の製造方法 | |
Wu et al. | Optical modulation of terahertz behavior in silicon with structured surfaces | |
JP2013236326A (ja) | 発振素子、受信素子、及び測定装置 | |
US8153999B2 (en) | Terahertz wave generating device and apparatus using the same | |
CN105703216B (zh) | 一种集成吸收波导的太赫兹量子级联激光器及其制作方法 | |
US9680000B2 (en) | Terahertz radiating device and fabricating method for the same | |
Zheng et al. | A perspective on β-Ga2O3 micro/nanoelectromechanical systems | |
Sarma et al. | Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface | |
Nissiyah et al. | A narrow spectrum terahertz emitter based on graphene photoconductive antenna | |
Muravev et al. | Tunable terahertz phase shifter based on GaAs semiconductor technology | |
Cakmakyapan et al. | Resonance broadening and tuning of split ring resonators by top-gated epitaxial graphene on SiC substrate | |
Peytavit et al. | Wide-band continuous-wave terahertz source with a vertically integrated photomixer | |
Lai et al. | Single mode stimulated emission from prismlike gallium nitride submicron cavities | |
US9594266B1 (en) | Tuneable photonic device including an array of metamaterial resonators |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15806588 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017516023 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15317669 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15806588 Country of ref document: EP Kind code of ref document: A1 |