JP6431978B2 - テラヘルツ変調器、高速テラヘルツ波の変調方法及び対称誘電体共振空洞付きのテラヘルツ変調器の製造方法 - Google Patents
テラヘルツ変調器、高速テラヘルツ波の変調方法及び対称誘電体共振空洞付きのテラヘルツ変調器の製造方法 Download PDFInfo
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Description
ソース電極、ドレイン電極及び回折格子ゲート電極を含むGaN/AlGaNの高電子移動度トランジスタと、
プラズマ波を励起させるのに用いられ、前記トランジスタの半導体ヘテロ界面におけるナローギャップ半導体側に形成された準2次元電子殻と、
を含むプラズモンと、
回折格子とサンプルが接触する表面から薄化されたサファイア基板の下部表面にわたって形成された誘電体共振空洞を含む共振空洞と、
を含む。
前記トランジスタのソース電極とドレイン電極を接地させ、前記トランジスタのゲート電極に直流の
前記トランジスタに含まれている回折格子ゲート電極により、2次元電子ガスにおける2次元プラズマ波とテラヘルツ共振空洞モードを密結合させてプラズモンポラリトンを形成することと、
プラズモンと共振空洞型の共振条件を満たすように、回折格子のゲート電圧を調整することと、
共振空洞モードに対する効果的な変調を実現するために、共振と非共振点の間でゲート電圧を切り替えることと、
を含む高電子移動度トランジスタに基づく高速変調方法を提供する。
GaN/AlGaNの2次元電子ガス材料の小片にデバイス活性領域の2次元電子ガス平面を形成するステップ1と、
ソース電極、ドレイン電極のオーム接触を形成するステップ2と、
回折格子ゲート電極を形成するステップ3と、
回折格子ゲート電極とオーム接触するリード線電極及びウェハー接合に用いられるパターン転写を形成するステップ4と、
共振空洞構造を形成するために、サファイア基板の裏面を薄くし研磨するステップ5と、
を含むテラヘルツ変調器の製造方法を提供する。
ソース電極1、ドレイン電極2、回折格子ゲート電極3を含むGaN/AlGaNのHEMT構造と、
プラズマ波6の担体であり、又は、プラズマ波を励起させるのに用いられる、半導体ヘテロ界面におけるナローギャップ半導体側に形成された準2次元電子殻、すなわち、2次元電子ガス4と、を含む。
GaN/AlGaNの2次元電子ガス材料の小片にデバイス活性領域の2次元電子ガス平面を形成するステップ1と、
ソース電極、ドレイン電極のオーム接触を形成するステップ2と、
回折格子ゲート電極を形成するステップ3と、
回折格子ゲート電極とオーム接触するリード線電極及びウェハー接合に用いられるパターン転写を形成するステップ4と、
共振空洞構造を形成するために、サファイア基板の裏面を薄くし研磨するステップ5と、を含むテラヘルツ変調器の製造方法を提供する。
1)薄化装置と化学機械による研磨プロセスを採用して、共振空洞平板材料(サファイア)に対する薄化及び研磨を行う。
Claims (18)
- プラズモンと共振空洞を含む低次元電子プラズマ波に基づくテラヘルツ変調器であって、
前記プラズモンは、
ソース電極、ドレイン電極と回折格子ゲート電極を含むGaN/AlGaNの高電子移動度トランジスタと、
プラズマ波を励起させるのに用いられ、前記トランジスタの半導体ヘテロ界面におけるナローギャップ半導体側に形成された準2次元電子殻と、
を含み、
前記共振空洞は、前記回折格子と前記GaN/AlGaNが接触する表面から薄化されたサファイア基板の下部表面にわたって形成された誘電体共振空洞と、回折格子ゲート電極の界面に形成されたサファイア基板と同じ誘電体層と、からなる対称共振空洞構造を含み、
前記テラヘルツ変調器の変調方法は、前記トランジスタのソース電極とドレイン電極を接地させ、前記トランジスタのゲート電極に
プラズモンと共振空洞型の共振条件を満たすように、回折格子のゲート電圧を調整することと、
共振空洞モードに対する効果的な変調を実現するために、共振と非共振点の間でゲート電圧を切り替えることと、を含み、
前記ゲート電極に交流の変調信号を印加することは、負の直流のゲート電圧V G と振幅V M の交流変調信号が同時に前記ゲート電極に供給されることである、
ことを特徴とするテラヘルツ変調器。 - 前記回折格子ゲート電極は1次元回折格子又はインターデジタル型回折格子であることを特徴とする請求項1に記載のテラヘルツ変調器。
- 前記回折格子ゲート電極は、更に平面2次元回折格子、同心円状回折格子、テラヘルツメタマテリアル回折格子を含むことを特徴とする請求項1に記載のテラヘルツ変調器。
- 前記共振空洞は2次元電子ガスと共面する共振空洞であることを特徴とする請求項1に記載のテラヘルツ変調器。
- 前記準2次元電子殻は半導体2次元電子チャネルにおける電子であり、前記電子の集団振動によってテラヘルツ波に対する共振吸収を実現し、共振空洞モードと密結合することにより吸収を更に強化することを特徴とする請求項1に記載のテラヘルツ変調器。
- 高電子移動度トランジスタに基づく高速テラヘルツ波の変調方法であって、
前記トランジスタのソース電極とドレイン電極を接地させ、前記トランジスタのゲート電極に
前記トランジスタに含まれている回折格子ゲート電極により、2次元電子ガスにおける2次元プラズマ波とテラヘルツ共振空洞モードを密結合させてプラズモンポラリトンを形成することと、
プラズモンと共振空洞型の共振条件を満たすように、回折格子のゲート電圧を調整することと、
共振空洞モードに対する効果的な変調を実現するために、共振と非共振点の間でゲート電圧を切り替えることと、
を含み、
前記共振空洞は、前記回折格子と前記GaN/AlGaNが接触する表面から薄化されたサファイア基板の下部表面にわたって形成された誘電体共振空洞と、回折格子ゲート電極の界面に形成されたサファイア基板と同じ誘電体層と、からなる対称共振空洞構造を含み、
前記交流の変調信号を印加することは、負の直流のゲート電圧V G と振幅V M の交流変調信号が同時に前記ゲート電極に供給されることである、ことを特徴とする高速テラヘルツの変調方法。 - 前記プラズモンの共振周波数は
- 前記共振空洞は、Fabry−Perot共振空洞であり、前記Fabry−Perot共振空洞モードは
- プラズモンが共振空洞モードに共振密結合された場合、プラズモンポラリトンの2つの分岐が発生することを特徴とする請求項6又は7に記載の高速テラヘルツ波の変調方法。
- 請求項1に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法であって、
GaN/AlGaNの2次元電子ガス材料の小片にデバイス活性領域の2次元電子ガス平面を形成するステップ1と、
ソース電極、ドレイン電極のオーム接触を形成するステップ2と、
回折格子ゲート電極を形成するステップ3と、
回折格子ゲート電極とオーム接触するリード線電極及びウェハー接合に用いられるパターン転写を形成するステップ4と、
共振空洞構造を形成するために、サファイア基板の裏面を薄くし研磨するステップ5と、
共振空洞平板材料に対する薄化及び研磨を行うことと、
共振空洞平板材料においてウェハー接合領域のパターン転写を行うことと、
接合された金属領域においてフリップチップボンディングのパターン転写を実現することと、
を含む誘電体共振空洞を製造するステップと、
前記誘電体共振空洞と前記回折格子ゲート電極を接合させるステップ6と、
を含む、ことを特徴とする対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。 - ステップ1において、前記GaN/AlGaNの2次元電子ガス材料の小片は、レーザースクライビングマシンを用いて2寸(約30.303mm、以下同様)のGaN/AlGaNの2次元電子ガスの原片を長さと幅がいずれも1.5cmである四角形の小片に切断して得られ、前記2次元電子ガス平面は、紫外線露光技術を用いて2次元電子ガス平面のパターン転写を実現し、その後、デバイス活性領域の平面を形成するために、誘導結合プラズマを用いて2次元電子ガス材料をエッチングする、ことを特徴とする請求項10に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
- ステップ2は、フォトエッチングし、電子ビーム蒸発プロセスを採用して、2次元電子ガス平面にオーム接触する複数層の金属構造を蒸着し、剥離させた後、オーム接触する金属パターンを形成し、急速焼きなまし炉に投入して焼きなましを行い、ソース電極とドレイン電極のオーム接触を形成することをさらに含むことを特徴とする請求項10に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
- ステップ3における前記回折格子ゲート電極を形成することは、フォトエッチングし、電子ビーム蒸発を採用してTi/Au又はNi/Auを蒸着し、剥離させた後に金属回折格子ゲート電極構造を形成することを含み、ステップ4において、リード線電極の形成は、まずフォトエッチングを採用し、電子ビーム蒸発によってTi/Au又はNi/Auを蒸着し、剥離させた後に該当する電極構造を形成することを特徴とする請求項10に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
- 共振空洞構造を形成するために、薄化装置及び化学機械を用いて前記サファイア基板を薄化及び研磨することを特徴とする請求項10又は11に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
- ステップ5の後、更に、レーザースクライビング加工と手動による剥離を採用して、小片に切断し単一の回折格子結合2次元電子ガスのチップを形成することを含むことを特徴とする請求項10又は11に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
- 共振空洞平板材料においてウェハー接合領域のパターン転写を行う前記ステップは、電子ビーム蒸発によってTi/Au又はNi/Auを蒸着し、剥離させてウェハー接合の金属領域を形成することを特徴とする請求項10に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
- 接合された金属領域においてフリップチップボンディングのパターン転写を行う前記ステップは、熱蒸発によってインジウムを蒸着し、剥離させてフリップチップボンディングに必要なインジウム柱を得ることを特徴とする請求項10に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
- 前記誘電体共振空洞と前記回折格子ゲート電極を接合させる前記ステップは、両者を位置合わせ、加熱後に圧力を加え、両者を金−インジウムの固溶化熱処理を介して一体に結合させ、最後にリフロー炉で逆流させることを特徴とする請求項10に記載の対称誘電体共振空洞付きのテラヘルツ変調器の製造方法。
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