WO2015188408A1 - 一种覆晶薄膜基板及其制作方法和显示面板 - Google Patents

一种覆晶薄膜基板及其制作方法和显示面板 Download PDF

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Publication number
WO2015188408A1
WO2015188408A1 PCT/CN2014/081089 CN2014081089W WO2015188408A1 WO 2015188408 A1 WO2015188408 A1 WO 2015188408A1 CN 2014081089 W CN2014081089 W CN 2014081089W WO 2015188408 A1 WO2015188408 A1 WO 2015188408A1
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WIPO (PCT)
Prior art keywords
protective layer
substrate
soldering
disposed
array substrate
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Ceased
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PCT/CN2014/081089
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English (en)
French (fr)
Inventor
黄世帅
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/391,060 priority Critical patent/US20150362769A1/en
Publication of WO2015188408A1 publication Critical patent/WO2015188408A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/118—Printed elements for providing electric connections to or between printed circuits specially for flexible printed circuits, e.g. using folded portions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of flexible or folded printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering

Definitions

  • the invention belongs to the technical field of displays, and in particular relates to a flip chip substrate, a manufacturing method thereof and a display panel.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display, thin film transistor liquid crystal display
  • COF substrate chip on film
  • a soldering lead 2 is provided on the COF substrate 1, and a protective layer 3 is applied on the soldering lead 2.
  • Copper is often used as a material for soldering leads because of its good electrical and thermal conductivity and good flexibility.
  • a soldered lead to which the protective layer 3 is not applied is left on the COF substrate for soldering to the soldering lead of the liquid crystal panel.
  • a layer of tuffy resin glue is applied on the thin film transistor side of the liquid crystal panel to prevent corrosion of the soldering lead of the liquid crystal panel, such as being corroded by H2O, ions, and the like.
  • tuffy resin coating is not applied on the back side of the COF, as shown in Figure 2. Therefore, some of the solder leads on the COF are exposed to the air, although the copper is more resistant to corrosion and will not It is corroded by water vapor, but an electrochemical reaction occurs in the presence of ions and is corroded.
  • the electrochemical reaction is as follows:
  • An object of the present invention is to provide a flip chip substrate, a manufacturing method thereof and a display panel It is intended to solve the problem that the welding leads on the COF existing in the prior art are partially exposed to the air, but an electrochemical reaction occurs in the presence of ions, which may be corroded, thereby affecting the problem of signal transmission.
  • the present invention is achieved by a display panel, wherein the display panel comprises:
  • An array substrate the array substrate is disposed on the color filter
  • the terminal trace is disposed on the array substrate, and the terminal trace is electrically connected to the solder lead;
  • the soldering lead is disposed on the surface of the substrate
  • the protective layer being disposed at an intermediate position of the soldering lead
  • the metal active material of the metal thin film protective layer is higher than the metal activeness of the metal material of the soldering lead.
  • the metal thin film protective layer is further disposed on the soldering lead connected to the terminal trace on the array substrate.
  • the thickness of the metal film protective layer is greater than or equal to the thickness of the soldering lead.
  • the metal material of the metal film protective layer includes: aluminum, zinc, iron, or tin.
  • the material used for the soldering lead is a copper wire.
  • Another object of the present invention is to provide a method for fabricating a chip-on-film substrate, wherein the flip-chip substrate transmits a driving signal to the array substrate through terminal traces on the array substrate, and the method of manufacturing the chip-coated film substrate includes the following steps:
  • the metal thin film protective layer is disposed on the soldering leads that are not connected to the terminal traces on the array substrate on.
  • the method for fabricating the flip chip substrate further includes the following steps:
  • the metal thin film protective layer is formed on the soldering leads connected to the terminal traces on the array substrate.
  • the metal material of the metal thin film protective layer has a metal activeness higher than or equal to the metal activeness of the metal material of the soldering lead.
  • the thickness of the metal film protective layer is greater than or equal to the thickness of the soldering lead.
  • Another object of the present invention is to provide a flip-chip film substrate that transmits driving signals to the array substrate through terminal traces on the array substrate, the flip-chip film substrate comprising:
  • Soldering leads disposed on the surface of the substrate
  • the protective layer being disposed at a predetermined position of the soldering lead
  • the metal film protective layer is disposed on the soldering lead of the uncoated protective layer
  • the metal thin film protective layer is disposed on the soldering leads that are not connected to the terminal traces on the array substrate on.
  • the metal thin film protective layer is further disposed on the soldering lead connected to the terminal trace on the array substrate.
  • the metal material of the metal thin film protective layer has a metal activeness higher than or equal to the metal activeness of the metal material of the soldering lead.
  • the thickness of the metal film protective layer is greater than or equal to the thickness of the soldering lead.
  • Another object of the present invention is to provide a display panel, the display panel comprising:
  • An array substrate the array substrate is disposed on the color filter
  • the terminal trace is disposed on the array substrate, and the terminal trace is electrically connected to the solder lead;
  • the soldering lead is disposed on the surface of the substrate
  • the protective layer being disposed at a predetermined position of the soldering lead
  • the metal thin film protective layer is further disposed on the soldering lead connected to the terminal trace on the array substrate.
  • a layer of a reactive metal thin film protective layer is plated on a portion of the COF substrate exposed to the soldered lead in the air, which does not affect the conductivity and protects the soldered lead of the copper material.
  • the embodiment of the invention mainly utilizes the characteristics that AL aluminum, Zn zinc, Fe iron, Sn tin and the like are more active than CU copper, and is easy to lose electrons, and preferentially loses electrochemical reaction in the atmosphere with water vapor and ions, thereby Delaying the corrosion of copper and slowing the corrosion of copper, forming a protective layer of active metal film on the soldered leads of the copper material.
  • the embodiment of the invention effectively reduces the risk of corrosion and fracture of the soldering leads on the COF substrate, thereby increasing the use time of the product and prolonging the life of the product.
  • FIG. 1 is a schematic structural view of a COF substrate provided by the prior art
  • FIG. 2 is a schematic view showing a structure in which a part of a soldering lead on a COF provided by the prior art is exposed to the air;
  • FIG. 3 is a schematic flow chart showing the implementation of a method for fabricating a flip chip substrate according to an embodiment of the present invention
  • FIG. 4 is a schematic structural view showing a part of a metal film protective layer on a soldering lead provided by an embodiment of the present invention
  • FIG. 5 is a schematic structural view of forming a protective film of a metal thin film at all positions of a soldering lead of an uncoated protective layer according to an embodiment of the present invention
  • FIG. 6 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
  • a layer of a reactive metal film protective layer is plated on the soldered lead exposed on the COF substrate, which does not affect the conductivity, and protects the soldering lead of the copper material, thereby reducing the COF substrate.
  • the soldering leads on the solder are at risk of corrosion cracking. It is solved that a part of the welding lead on the COF existing in the prior art is exposed to the air, but an electrochemical reaction occurs in the presence of ions, which is corroded, thereby affecting the problem of signal transmission.
  • FIG. 3 is a flow chart for implementing a method for fabricating a flip chip substrate according to an embodiment of the present invention, which includes the following steps:
  • step S101 a substrate is provided, and soldering leads are disposed on the substrate;
  • soldering leads are disposed on the flip chip substrate, and the soldering leads are electrically connected to the terminal traces on the array substrate.
  • the material used for the soldering lead is a copper wire.
  • step S102 coating a protective layer on a predetermined position of the soldering lead
  • a protective layer is applied at an intermediate position of the soldering lead.
  • a protective layer is coated on the middle of the soldering lead, and a protective layer is not required to be applied at both ends of the soldering lead, so that the soldering lead without the protective layer needs to be
  • the terminal traces on the array substrate are electrically connected.
  • step S103 a metal thin film protective layer is formed on the soldering lead to which the protective layer is not applied.
  • the metal thin film protective layer is disposed on a terminal that is not connected to the terminal traces on the array substrate.
  • the flip-chip film substrate transmits driving signals to the array substrate through terminal traces on the array substrate.
  • a protective layer of a metal thin film which is more active than copper is formed on the soldering lead which is not coated with the protective layer, and the metal material used for the protective layer of the metal thin film is, for example, aluminum, zinc, Iron, or tin, is a chemically active metal than copper.
  • a metal film protective layer is formed only on the soldering lead which is not coated with the protective layer and is close to the protective layer.
  • the metal thin film protective layer is disposed on the soldering leads exposed in the air. That is, after the soldering leads of the flip chip substrate are connected to the terminal traces on the array substrate, the metal thin film protective layer is disposed on the soldering leads that are not connected to the terminal traces on the array substrate.
  • a metal thin film protective layer is formed at all positions of the soldering leads to which the protective layer is not applied. That is, the metal thin film protective layer is also formed on the soldering lead which is not coated with the protective layer and which is connected to the terminal traces on the array substrate.
  • the thickness of the metal thin film protective layer is set to be equal to or greater than the thickness of the soldering lead. This effectively delays the corrosion of copper and slows the corrosion of copper.
  • the thickness of the protective layer of the metal thin film can be set according to actual requirements.
  • step S103 the following steps are further included:
  • soldering leads on the flip chip substrate are soldered to the terminal traces on the array substrate to electrically connect the solder leads on the flip chip substrate to the terminal traces on the array substrate.
  • FIG. 4 and FIG. 5 are schematic structural diagrams of a flip chip substrate according to an embodiment of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the flip chip substrate includes:
  • soldering lead 20 is disposed on the surface of the substrate 10;
  • the protective layer 30 is disposed at a predetermined position of the soldering lead 20;
  • the protective layer 30 is applied at an intermediate position of the soldering lead 20.
  • the metal film protective layer 40 is disposed on the soldering lead 20 of the uncoated protective layer 30;
  • the metal thin film protective layer 40 is disposed on the terminal traces that are not connected to the array substrate.
  • the flip-chip film substrate transmits driving signals to the array substrate through terminal traces on the array substrate.
  • the substrate 10 is a COF substrate.
  • a plurality of soldering leads 20 are disposed on the flip chip substrate, and the soldering leads 20 are made of a copper wire.
  • the soldering leads 20 are used for electrical connection with terminal traces on the array substrate.
  • the metal thin film protective layer 40 is a metal thin film protective layer which is more active than copper, and the metal material used for the copper active metal thin film protective layer includes, for example, aluminum, zinc, iron, or tin. Chemically more active than copper.
  • a metal film protective layer 40 is provided only at the position of the soldering lead which is not coated with the protective layer and is close to the protective layer, as shown in FIG.
  • the metal thin film protective layer 40 is disposed on the solder leads exposed in the air. That is, after the soldering leads of the flip-chip substrate are connected to the terminal traces on the array substrate, the metal thin film protective layer 40 is disposed on the soldering leads 20 that are not connected to the terminal traces on the array substrate. on.
  • a metal film protective layer 40 is provided at all positions of the soldering leads to which the protective layer is not applied, as shown in FIG. That is, the metal thin film protective layer 40 is also formed on the soldering lead which is not coated with the protective layer and which is connected to the terminal traces on the array substrate.
  • the thickness of the metal thin film protective layer 40 is set to be equal to or greater than the thickness of the soldering lead. This effectively delays the corrosion of copper and slows the corrosion of copper.
  • the thickness of the protective layer of the metal thin film can be set according to actual requirements.
  • FIG. 6 is a schematic structural diagram of a display panel according to an embodiment of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the display panel comprises: a substrate 10; a soldering lead 20, a protective layer 30, a metal film protective layer 40, a color filter 50, an array substrate 60, and terminal traces 70.
  • soldering lead 20 is disposed on the surface of the substrate 10; the protective layer 30 is disposed at a predetermined position of the soldering lead 20; preferably, the protective layer is coated at an intermediate position of the soldering lead 20 Layer 30.
  • the metal film protective layer 40 is disposed on the soldering lead 20 that is not connected to the terminal traces on the array substrate; the array substrate 60 is disposed on the color filter 50; the terminal trace 70 is disposed The terminal traces 70 are electrically connected to the solder leads 20 on the array substrate 60.
  • the substrate 10 is a COF substrate.
  • a plurality of soldering leads 20 are disposed on the flip chip substrate, and the soldering leads 20 are made of a copper wire.
  • the soldering leads 20 are used for electrical connection with the terminal traces 70 on the array substrate 60.
  • the COF substrate transmits a driving signal to the array substrate 60 through the terminal traces 70 on the array substrate 60.
  • the metal thin film protective layer 40 is a metal thin film protective layer which is more active than copper, and the metal material used for the copper active metal thin film protective layer includes, for example, aluminum, zinc, iron, or tin. Chemically more active than copper.
  • a metal film protective layer 40 is provided only at the position of the soldering lead which is not coated with the protective layer and is close to the protective layer, as shown in FIG.
  • the metal thin film protective layer 40 is disposed on the solder leads 20 exposed in the air. That is, after the soldering leads 20 of the flip-chip substrate are connected to the terminal traces 70 on the array substrate 60, the metal thin film protective layer 40 is disposed on the terminal traces 70 that are not connected to the array substrate 60.
  • the soldering lead 20 is on.
  • a metal thin film protective layer 40 is provided at all positions of the soldering leads 20 to which the protective layer is not applied, as shown in FIG. That is, the metal thin film protective layer 40 is also formed on the soldering lead 20 to which the protective layer is not applied and which is connected to the terminal wiring 70 on the array substrate 60.
  • the thickness of the metal thin film protective layer 40 is set to be equal to or greater than the thickness of the soldering lead. This effectively delays the corrosion of copper and slows the corrosion of copper.
  • the thickness of the protective layer of the metal thin film can be set according to actual requirements.
  • a layer of active metal film protective layer is plated on the soldered lead exposed on the COF substrate, which does not affect the conductivity and protects the soldering lead of the copper material.
  • the embodiment of the invention mainly utilizes the characteristics that AL aluminum, Zn zinc, Fe iron, Sn tin and the like are more active than CU copper, and is easy to lose electrons, and preferentially loses electrochemical reaction in the atmosphere with water vapor and ions, thereby Delaying the corrosion of copper and slowing the corrosion of copper, forming a protective layer of active metal film on the soldered leads of the copper material.
  • the embodiment of the invention effectively reduces the risk of corrosion and fracture of the soldering leads on the COF substrate, thereby increasing the use time of the product and prolonging the life of the product.

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Abstract

一种覆晶薄膜基板包括：基板（10）；焊接引线（20），设置于基板（10）表面上；保护层（30），设置于焊接引线（20）的预设位置上；金属薄膜保护层（40），设置于未涂布保护层（30）的焊接引线（20）上。通过在覆晶薄膜基板上的部分裸露在空气中的焊接引线（20）上镀一层活泼金属薄膜保护层，延缓铜被腐蚀的时间和减缓铜被腐蚀的速度，降低覆晶薄膜基板上的焊接引线（20）被腐蚀断裂的风险。

Description

一种覆晶薄膜基板及其制作方法和显示面板 技术领域
本发明属于显示器技术领域，尤其涉及一种覆晶薄膜基板及其制作方法和显示面板。
 背景技术
TFT-LCD（Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示器）面板在正常显示时，需要使用COF基板（chip on film，覆晶薄膜）连接PCB板（Printed Circuit Board，印刷电路板）和液晶面板，从而可以使得PCB板上的信号能够导通到面板中。
如图1所示，在COF基板1上设置焊接引线2，在焊接引线2上涂布保护层3。由于铜具有良好的导电导热性能以及有良好的柔韧性，因此铜常作为制作焊接引线的材料。在COF基板上会留出未涂布保护层3的焊接引线用于焊接到液晶面板的焊接引线。
在模组阶段，COF完成焊接后会在液晶面板的薄膜晶体管侧涂布一层tuffy树脂胶，用于防止液晶面板焊接引线的腐蚀，比如被H2O、离子等腐蚀。然而，由于制程限制一般不会在COF背面做tuffy树脂胶涂布的动作，如图2所示，因此COF上的焊接引线会有一部分裸露在空气中，虽然铜抗腐蚀性较强，不会被水蒸气腐蚀，但是在有离子存在的环境下会发生电化学反应，会被腐蚀掉。特别是在氯离子存在的状态下，由于氯离子有很强的穿透性和容易水解成酸的特性，因此大大加快了下述的电化学反应，形成点蚀和坑蚀，严重情况下会使得裸露的铜断裂，影响信号的传输。电化学反应如下所示：
Figure TP140378PCT-appb-I000001
 技术问题
本发明的目的在于提供一种 覆晶薄膜基板及其制作方法和显示面板 ，旨在解决现有技术中存在的COF上焊接引线会有一部分裸露在空气中，但是在有离子存在的环境下会发生电化学反应，会被腐蚀掉，从而影响信号的传输的问题。
技术解决方案
本发明是这样实现的，一种显示面板，其中所述显示面板包括：
一彩色滤光片；
一阵列基板；所述阵列基板设置于所述彩色滤光片上；
端子走线，所述端子走线设置于所述阵列基板上，所述端子走线与焊接引线电性连接；
一基板；
所述焊接引线，所述焊接引线设置于所述基板表面上；
一保护层，所述保护层设置于所述焊接引线的中间位置上；以及
一金属薄膜保护层，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上；
其中所述金属薄膜保护层的金属材料的金属活泼性，高于等于所述焊接引线的金属材料的金属活泼性。
其中所述金属薄膜保护层还设置在与所述阵列基板上的端子走线连接的所述焊接引线上。
其中所述金属薄膜保护层的厚度大于等于所述焊接引线的厚度。
其中所述金属薄膜保护层的金属材料包括：铝、锌、铁、或锡。
其中所述焊接引线采用的材料是铜线。
本发明的另一目的在于提供一种覆晶薄膜基板的制作方法，所述覆晶薄膜基板通过阵列基板上的端子走线向所述阵列基板传输驱动信号，所述覆晶薄膜基板的制作方法包括以下步骤：
提供一基板，在所述基板上设置焊接引线；
在所述焊接引线的预设位置上涂布保护层；以及
在未涂布所述保护层的所述焊接引线上形成金属薄膜保护层；
其中，当所述覆晶薄膜基板的焊接引线与所述阵列基板上的端子走线连接后，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。
所述覆晶薄膜基板的制作方法还包括以下步骤：
在与所述阵列基板上的端子走线连接的所述焊接引线上形成所述金属薄膜保护层。
所述金属薄膜保护层的金属材料的金属活泼性，高于等于所述焊接引线的金属材料的金属活泼性。
所述金属薄膜保护层的厚度大于等于所述焊接引线的厚度。
本发明的另一目的在于提供一种覆晶薄膜基板，所述覆晶薄膜基板通过阵列基板上的端子走线向所述阵列基板传输驱动信号，所述覆晶薄膜基板包括：
一基板；
焊接引线，所述焊接引线设置于所述基板表面上；
一保护层，所述保护层设置于所述焊接引线的预设位置上；以及
一金属薄膜保护层，所述金属薄膜保护层设置于未涂布保护层的焊接引线上；
其中，当所述覆晶薄膜基板的焊接引线与所述阵列基板上的端子走线连接后，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。
所述金属薄膜保护层还设置在与所述阵列基板上的端子走线连接的所述焊接引线上。
所述金属薄膜保护层的金属材料的金属活泼性，高于等于所述焊接引线的金属材料的金属活泼性。
所述金属薄膜保护层的厚度大于等于所述焊接引线的厚度。
本发明的另一目的在于提供一种显示面板，所述显示面板包括：
一彩色滤光片；
一阵列基板；所述阵列基板设置于所述彩色滤光片上；
端子走线，所述端子走线设置于所述阵列基板上，所述端子走线与焊接引线电性连接；
一基板；
所述焊接引线，所述焊接引线设置于所述基板表面上；
一保护层，所述保护层设置于所述焊接引线的预设位置上；以及
一金属薄膜保护层，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。
所述金属薄膜保护层还设置在与所述阵列基板上的端子走线连接的所述焊接引线上。
 有益效果
在本发明中，通过在COF基板上的部分裸露在空气中的焊接引线上镀一层活泼金属薄膜保护层，这样既不影响导电，又保护了铜材料的焊接引线。本发明实施例主要是利用AL铝、Zn锌、Fe铁、Sn锡等化学性质比CU铜活泼，容易失去电子的特点，在有水气和离子的氛围中优先失去电子发生电化学反应，从而延缓铜被腐蚀的时间和减缓铜被腐蚀的速度，在铜材料的焊接引线上形成活泼金属薄膜保护层。本发明实施例有效降低了COF基板上的焊接引线被腐蚀断裂的风险，从而增加了产品的使用时间，以及延长了产品的寿命。
 附图说明
图1是现有技术提供的COF基板的结构示意图；
图2是现有技术提供的COF上焊接引线会有一部分裸露在空气中的结构示意图；
图3是本发明实施例提供的覆晶薄膜基板的制作方法的实现流程示意图；
图4是本发明实施例提供的焊接引线上设置一部分金属薄膜保护层的结构示意图；
图5是本发明实施例提供的在未涂布保护层的焊接引线的所有位置上形成金属薄膜保护层的结构示意图；
图6是本发明实施例提供的显示面板的结构示意图。
 本发明的最佳实施方式
为了使本发明的目的、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
在本发明实施例中，通过在COF基板上的部分裸露在空气中的焊接引线上镀一层活泼金属薄膜保护层，这样既不影响导电，又保护了铜材料的焊接引线，降低了COF基板上的焊接引线被腐蚀断裂的风险。解决了现有技术中存在的COF上焊接引线会有一部分裸露在空气中，但是在有离子存在的环境下会发生电化学反应，会被腐蚀掉，从而影响信号的传输的问题。
请参阅图3，为本发明实施例提供的覆晶薄膜基板的制作方法的实现流程，其包括以下步骤：
在步骤S101中，提供一基板，在所述基板上设置焊接引线；
在本发明实施例中，在所述覆晶薄膜基板上设置多条焊接引线，所述焊接引线用于与阵列基板上的端子走线进行电性连接。其中，所述焊接引线采用的材料是铜线。
在步骤S102中，在所述焊接引线的预设位置上涂布保护层；
优选地，在所述焊接引线的中间位置上涂布保护层。
在本发明实施例中，在所述焊接引线的中间位置上涂布保护层，在所述焊接引线的两端位置则不需要涂布保护层，目的是没有涂布保护层的焊接引线需要与阵列基板上的端子走线进行电性连接。
在步骤S103中，在未涂布所述保护层的所述焊接引线上形成金属薄膜保护层。
在本发明实施例中，当所述覆晶薄膜基板的焊接引线与阵列基板上的端子走线连接后，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。其中，所述覆晶薄膜基板通过阵列基板上的端子走线向所述阵列基板传输驱动信号。
在本发明实施例中，在未涂布保护层的焊接引线上形成一层比铜活泼的金属薄膜保护层，所述比铜活泼的金属薄膜保护层采用的金属材料例如包括：铝、锌、铁、或锡等化学性质比铜活泼的金属。
作为本发明一实施例，为节省材料以及减少制作工序，仅在未涂布保护层且靠近所述保护层的焊接引线上形成一段金属薄膜保护层。
优选地，在所述焊接引线与阵列基板上的端子走线连接时，裸露在空气中的焊接引线上设置金属薄膜保护层。即，当所述覆晶薄膜基板的焊接引线与阵列基板上的端子走线连接后，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。
作为本发明另一实施例，为了更好地防止焊接引线被腐蚀断裂的风险，在未涂布保护层的焊接引线的所有位置上形成金属薄膜保护层。即，还在未涂布所述保护层且与所述阵列基板上的端子走线连接的所述焊接引线上形成所述金属薄膜保护层。
优选地，为了更好地防止焊接引线被腐蚀断裂的风险，将所述金属薄膜保护层的厚度设置为大于等于所述焊接引线的厚度。这样有效延缓铜被腐蚀的时间和减缓铜被腐蚀的速度。然而，可以理解的是，所述金属薄膜保护层的厚度的大小可根据实际要求进行设置。
在本发明实施例中，在步骤S103之后，还包括以下步骤：
将覆晶薄膜基板上的焊接引线与阵列基板上的端子走线进行焊接，从而达到覆晶薄膜基板上的焊接引线与阵列基板上的端子走线电性连接。
请参阅图4及图5，为本发明实施例提供的覆晶薄膜基板的结构示意图。为了便于说明，仅示出了与本发明实施例相关的部分。所述覆晶薄膜基板包括：
一基板10；
焊接引线20，所述焊接引线20设置于所述基板10表面上；
一保护层30，所述保护层30设置于所述焊接引线20的预设位置上；
优选地，在所述焊接引线20的中间位置上涂布保护层30。
一金属薄膜保护层40，所述金属薄膜保护层40设置于未涂布保护层30的焊接引线20上；
在本发明实施例中，当所述覆晶薄膜基板的焊接引线20与阵列基板上的端子走线连接后，所述金属薄膜保护层40设置在未与所述阵列基板上的端子走线连接的所述焊接引线20上。其中，所述覆晶薄膜基板通过阵列基板上的端子走线向所述阵列基板传输驱动信号。
在本发明实施例中，所述基板10为COF基板。其中，在所述覆晶薄膜基板上设置有多条焊接引线20，所述焊接引线20采用的材料是铜线。所述焊接引线20用于与阵列基板上的端子走线进行电性连接。
在本发明实施例中，所述金属薄膜保护层40为比铜活泼的金属薄膜保护层，所述比铜活泼的金属薄膜保护层采用的金属材料例如包括：铝、锌、铁、或锡等化学性质比铜活泼的金属。
作为本发明一实施例，为节省材料以及减少制作工序，仅在未涂布保护层且靠近所述保护层的焊接引线位置上设置有一段金属薄膜保护层40，如图4所示。
优选地，在所述焊接引线20与阵列基板上的端子走线连接时，裸露在空气中的焊接引线上设置金属薄膜保护层40。即，当所述覆晶薄膜基板的焊接引线与阵列基板上的端子走线连接后，所述金属薄膜保护层40设置在未与所述阵列基板上的端子走线连接的所述焊接引线20上。
作为本发明另一实施例，为了更好地防止焊接引线被腐蚀断裂的风险，在未涂布保护层的焊接引线的所有位置上设置有金属薄膜保护层40，如图5所示。即，还在未涂布所述保护层且与所述阵列基板上的端子走线连接的所述焊接引线上形成所述金属薄膜保护层40。
优选地，为了更好地防止焊接引线被腐蚀断裂的风险，将所述金属薄膜保护层40的厚度设置为大于等于所述焊接引线的厚度。这样有效延缓铜被腐蚀的时间和减缓铜被腐蚀的速度。然而，可以理解的是，所述金属薄膜保护层的厚度的大小可根据实际要求进行设置。
请参阅图6，为本发明实施例提供的显示面板的结构示意图。为了便于说明，仅示出了与本发明实施例相关的部分。所述显示面板包括：一基板10；焊接引线20，一保护层30，一金属薄膜保护层40，一彩色滤光片50，一阵列基板60，以及端子走线70。
其中，所述焊接引线20设置于所述基板10表面上；所述保护层30设置于所述焊接引线20的预设位置上；优选地，在所述焊接引线20的中间位置上涂布保护层30。所述金属薄膜保护层40设置在未与阵列基板上的端子走线连接的所述焊接引线20上；所述阵列基板60设置于所述彩色滤光片50上；所述端子走线70设置于所述阵列基板60上，所述端子走线70与所述焊接引线20电性连接。
在本发明实施例中，所述基板10为COF基板。其中，在所述覆晶薄膜基板上设置有多条焊接引线20，所述焊接引线20采用的材料是铜线。所述焊接引线20用于与阵列基板60上的端子走线70进行电性连接。其中，所述COF基板通过阵列基板60上的端子走线70向所述阵列基板60传输驱动信号。
在本发明实施例中，所述金属薄膜保护层40为比铜活泼的金属薄膜保护层，所述比铜活泼的金属薄膜保护层采用的金属材料例如包括：铝、锌、铁、或锡等化学性质比铜活泼的金属。
作为本发明一实施例，为节省材料以及减少制作工序，仅在未涂布保护层且靠近所述保护层的焊接引线位置上设置有一段金属薄膜保护层40，如图4所示。
优选地，在所述焊接引线20与阵列基板60上的端子走线70连接时，裸露在空气中的焊接引线20上设置金属薄膜保护层40。即，当所述覆晶薄膜基板的焊接引线20与阵列基板60上的端子走线70连接后，所述金属薄膜保护层40设置在未与所述阵列基板60上的端子走线70连接的所述焊接引线20上。
作为本发明另一实施例，为了更好地防止焊接引线被腐蚀断裂的风险，在未涂布保护层的焊接引线20的所有位置上设置有金属薄膜保护层40，如图5所示。即，还在未涂布所述保护层且与所述阵列基板60上的端子走线70连接的所述焊接引线20上形成所述金属薄膜保护层40。
优选地，为了更好地防止焊接引线被腐蚀断裂的风险，将所述金属薄膜保护层40的厚度设置为大于等于所述焊接引线的厚度。这样有效延缓铜被腐蚀的时间和减缓铜被腐蚀的速度。然而，可以理解的是，所述金属薄膜保护层的厚度的大小可根据实际要求进行设置。
综上所述，通过在COF基板上的部分裸露在空气中的焊接引线上镀一层活泼金属薄膜保护层，这样既不影响导电，又保护了铜材料的焊接引线。本发明实施例主要是利用AL铝、Zn锌、Fe铁、Sn锡等化学性质比CU铜活泼，容易失去电子的特点，在有水气和离子的氛围中优先失去电子发生电化学反应，从而延缓铜被腐蚀的时间和减缓铜被腐蚀的速度，在铜材料的焊接引线上形成活泼金属薄膜保护层。本发明实施例有效降低了COF基板上的焊接引线被腐蚀断裂的风险，从而增加了产品的使用时间，以及延长了产品的寿命。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Figure TP140378PCT-appb-I000002
Figure TP140378PCT-appb-I000002
 本发明的实施方式
工业实用性
序列表自由内容

Claims (20)

  1. 一种显示面板，其中所述显示面板包括：
    一彩色滤光片；
    Figure TP140378PCT-appb-I000002
    一阵列基板；所述阵列基板设置于所述彩色滤光片上；
    端子走线，所述端子走线设置于所述阵列基板上，所述端子走线与焊接引线电性连接；
    一基板；
    所述焊接引线，所述焊接引线设置于所述基板表面上；
    一保护层，所述保护层设置于所述焊接引线的中间位置上；以及
    一金属薄膜保护层，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上；
    其中所述金属薄膜保护层的金属材料的金属活泼性，高于等于所述焊接引线的金属材料的金属活泼性。
  2. 如权利要求1所述的显示面板，其中所述金属薄膜保护层还设置在与所述阵列基板上的端子走线连接的所述焊接引线上。
  3. 如权利要求1所述的显示面板，其中所述金属薄膜保护层的厚度大于等于所述焊接引线的厚度。
  4. 如权利要求1所述的显示面板，其中所述金属薄膜保护层的金属材料包括：铝、锌、铁、或锡。
  5. 如权利要求1所述的显示面板，其中所述焊接引线采用的材料是铜线。
  6. 一种覆晶薄膜基板的制作方法，所述覆晶薄膜基板通过阵列基板上的端子走线向所述阵列基板传输驱动信号，其中所述覆晶薄膜基板的制作方法包括以下步骤：
    提供一基板，在所述基板上设置焊接引线；
    在所述焊接引线的预设位置上涂布保护层；以及
    在未涂布所述保护层的所述焊接引线上形成金属薄膜保护层；
    其中，当所述覆晶薄膜基板的焊接引线与所述阵列基板上的端子走线连接后，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。
    Figure TP140378PCT-appb-I000002
  7. 如权利要求6所述的覆晶薄膜基板的制作方法，其中所述覆晶薄膜基板的制作方法还包括以下步骤：
    在与所述阵列基板上的端子走线连接的所述焊接引线上形成所述金属薄膜保护层。
  8. 如权利要求6所述的覆晶薄膜基板的制作方法，其中形成所述金属薄膜保护层的金属材料的金属活泼性，高于等于形成所述焊接引线的金属材料的金属活泼性。
  9. 如权利要求6所述的覆晶薄膜基板的制作方法，其中所述金属薄膜保护层的厚度大于等于所述焊接引线的厚度。
  10. 如权利要求6所述的覆晶薄膜基板的制作方法，其中所述金属薄膜保护层的金属材料包括：铝、锌、铁、或锡。
  11. 如权利要求6所述的覆晶薄膜基板的制作方法，其中所述焊接引线采用的材料是铜线。
  12. 一种覆晶薄膜基板，所述覆晶薄膜基板通过阵列基板上的端子走线向所述阵列基板传输驱动信号，其中所述覆晶薄膜基板包括：
    一基板；
    焊接引线，所述焊接引线设置于所述基板表面上；
    一保护层，所述保护层设置于所述焊接引线的预设位置上；以及
    一金属薄膜保护层，所述金属薄膜保护层设置于未涂布所述保护层的所述焊接引线上；
    其中，当所述覆晶薄膜基板的焊接引线与所述阵列基板上的端子走线连接后，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。
  13. 如权利要求12所述的覆晶薄膜基板，其中所述金属薄膜保护层还设置在与所述阵列基板上的端子走线连接的所述焊接引线上。
  14. 如权利要求12所述的覆晶薄膜基板，其中所述金属薄膜保护层的金属材料的金属活泼性，高于等于所述焊接引线的金属材料的金属活泼性。
    Figure TP140378PCT-appb-I000002
  15. 如权利要求12所述的覆晶薄膜基板，其中所述金属薄膜保护层的厚度大于等于所述焊接引线的厚度。
  16. 一种显示面板，其中所述显示面板包括：
    一彩色滤光片；
    一阵列基板；所述阵列基板设置于所述彩色滤光片上；
    端子走线，所述端子走线设置于所述阵列基板上，所述端子走线与焊接引线电性连接；
    一基板；
    所述焊接引线，所述焊接引线设置于所述基板表面上；
    一保护层，所述保护层设置于所述焊接引线的预设位置上；以及
    一金属薄膜保护层，所述金属薄膜保护层设置在未与所述阵列基板上的端子走线连接的所述焊接引线上。
  17. 如权利要求16所述的显示面板，其中所述金属薄膜保护层还设置在与所述阵列基板上的端子走线连接的所述焊接引线上。
  18. 如权利要求16所述的显示面板，其中所述金属薄膜保护层的厚度大于等于所述焊接引线的厚度。
  19. 如权利要求16所述的显示面板，其中所述金属薄膜保护层的金属材料包括：铝、锌、铁、或锡。
  20. 如权利要求16所述的显示面板，其中所述焊接引线采用的材料是铜线。
PCT/CN2014/081089 2014-06-12 2014-06-30 一种覆晶薄膜基板及其制作方法和显示面板 Ceased WO2015188408A1 (zh)

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