WO2015186230A1 - Cellule solaire - Google Patents

Cellule solaire Download PDF

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Publication number
WO2015186230A1
WO2015186230A1 PCT/JP2014/065012 JP2014065012W WO2015186230A1 WO 2015186230 A1 WO2015186230 A1 WO 2015186230A1 JP 2014065012 W JP2014065012 W JP 2014065012W WO 2015186230 A1 WO2015186230 A1 WO 2015186230A1
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Prior art keywords
dielectric layer
layer
metal
solar battery
battery cell
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PCT/JP2014/065012
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English (en)
Japanese (ja)
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裕紀 若菜
敬司 渡邉
長部　太郎
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株式会社日立製作所
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Priority to PCT/JP2014/065012 priority Critical patent/WO2015186230A1/fr
Publication of WO2015186230A1 publication Critical patent/WO2015186230A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a solar battery cell.
  • a conductor portion is formed on one surface of a p-type semiconductor substrate so as to be distributed in a predetermined pattern, and a silicon liquid material is sealed so as to seal the conductor portion. It is applied and baked to form an i-type semiconductor, and an n-type semiconductor layer and a transparent conductive film to be a light-irradiated surface are formed thereon, and the conductor portion induces surface plasmon resonance and performs photoelectric conversion during light irradiation.
  • Technology is disclosed.
  • Patent Document 2 discloses a pn junction formed by a p-type semiconductor layer and an n-type semiconductor layer, a metal electrode formed in one conductive type semiconductor layer of the pn junction, and a pn junction.
  • the metal electrode is formed by a metal nanoparticle layer composed of metal nanoparticles that cause surface plasmon resonance. The technology formed is disclosed.
  • multi-exciton production has attracted attention as a technology for improving the efficiency of solar cells.
  • multi-exciton generation will be briefly described.
  • the light that can be absorbed by the solar battery cell is light having energy equal to or higher than the band gap of the semiconductor material of the power generation layer. Therefore, surplus energy exceeding the band gap (hereinafter referred to as Eg) Dissipated as heat.
  • Eg surplus energy exceeding the band gap
  • multi-exciton generation is a phenomenon in which electron-hole pairs are further generated by surplus energy when the surplus energy is twice or more Eg. By utilizing this phenomenon, surplus energy that has been dissipated as heat in the past can be converted into electric power, which is expected to increase the efficiency of solar cells.
  • a typical object of the present invention is to provide a solar cell that achieves both improvement in efficiency in the short wavelength region and reduction in reflectance.
  • the solar cell includes a substrate having a pn junction, a metal layer formed on the substrate and having a periodic pattern structure smaller than a wavelength of incident light, and a first layer formed so as to cover the metal layer. And a dielectric layer.
  • the thickness of the first dielectric layer is equal to or less than the thickness ( ⁇ / 4) based on the wavelength of the incident light.
  • a solar cell includes a substrate having a pn junction, an oxide film formed on the substrate, a metal layer formed on the oxide film and having a periodic pattern structure smaller than the wavelength of incident light, And a first dielectric layer formed to cover the metal layer.
  • the thickness of the first dielectric layer is equal to or less than the thickness ( ⁇ / 4) based on the wavelength of the incident light.
  • a typical effect is to provide a solar cell that achieves both improvement in efficiency in the short wavelength region and reduction in reflectance.
  • the photovoltaic cell of Embodiment 1 of this invention is a graph which shows the relationship between the film thickness of a metal layer, and the average reflectance of a short wavelength area. It is sectional drawing which shows the manufacturing method of the photovoltaic cell of Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing method of a photovoltaic cell following FIG. 6A. It is sectional drawing which shows the manufacturing method of a photovoltaic cell following FIG. 6B. It is sectional drawing which shows the metal layer vicinity of the photovoltaic cell of Embodiment 2 of this invention.
  • the photovoltaic cell of Embodiment 2 of this invention is a graph which shows the relationship between the film thickness of an oxide film, and the average reflectance of a short wavelength area. It is a block diagram which shows the solar cell system using the photovoltaic cell of Embodiment 3 of this invention.
  • the constituent elements are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.
  • the shapes, positional relationships, etc. of the components, etc. when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numbers and the like (including the number, numerical value, quantity, range, etc.).
  • the solar battery cell according to the embodiment includes a substrate having a pn junction (light receiving layer 1) and a metal layer (metal layer 2) formed on the substrate and having a periodic pattern structure smaller than the wavelength of incident light. And a first dielectric layer (first dielectric layer 3) formed to cover the metal layer. The thickness of the first dielectric layer is equal to or less than the thickness ( ⁇ / 4) based on the wavelength of the incident light.
  • This solar battery cell is an example of the first embodiment.
  • the solar battery cell according to the embodiment is formed by being incident on a substrate having a pn junction (light receiving layer 1), an oxide film (oxide film 9) formed on the substrate, and the oxide film.
  • a metal layer metal layer 2 having a periodic pattern structure smaller than the wavelength of light; and a first dielectric layer (first dielectric layer 3) formed to cover the metal layer.
  • the thickness of the first dielectric layer is equal to or less than the thickness ( ⁇ / 4) based on the wavelength of the incident light.
  • This solar battery cell is an example of the second embodiment.
  • hatching may be omitted even in a cross-sectional view for easy understanding of the drawings. Further, even a top view may be hatched to make the drawing easy to see.
  • the metal nanopattern structure is taken up.
  • the metal nanopattern structure is a periodic pattern structure in which columnar structures having a width smaller than that of incident sunlight (fine) or having a width equivalent to the wavelength of sunlight are periodically arranged on the light receiving layer.
  • the metal layer thickness is 20 nm or less and the pattern width is 300 nm to 500 nm or less, so that it has an aspect ratio close to that of a flat plate, and the columnar direction of the columnar structure Is perpendicular to the light-receiving layer surface.
  • a cylindrical shape (circular when viewed from above) is cited as the metal nanopattern shape, but a different metal nanopattern shape such as a prism may be used.
  • FIG. 1 is a cross-sectional view showing the structure of the solar battery cell of the first embodiment.
  • FIG. 2 is sectional drawing which shows the metal layer vicinity of a photovoltaic cell.
  • the metal layer 2, the first dielectric layer 3, the second dielectric layer 4, and the third dielectric are formed on the light receiving layer 1 made of a substrate having a pn junction.
  • the light-receiving layer 1 has a pn junction composed of a p-type semiconductor layer such as a silicon substrate into which p-type impurities are introduced and an n-type semiconductor layer such as silicon into which n-type impurities are introduced.
  • a nano pattern of a metal layer 2 such as Al or Ag is formed on the light receiving layer 1, and a first dielectric layer 3 is formed so as to cover the metal layer 2,
  • the second dielectric layer 4 is formed on the first dielectric layer 3, and the third dielectric layer 5 is formed on the second dielectric layer 4.
  • the material of the metal layer 2 should just be comprised from at least 1 type of Ag and Al.
  • FIG. 3 is a top view (a top view with respect to the cross-sectional view of FIG. 2) showing the metal pattern 8 of the metal layer 2.
  • FIG. 3 the same hatching as that of the cross-sectional view is given for easy understanding of the correspondence with the cross-sectional view of FIG.
  • metal patterns 8 having a periodic pattern structure smaller than the wavelength of incident sunlight are periodically arranged on the metal layer 2.
  • the combination of the metal layer 2 and the first dielectric layer 3 has a function of generating surface plasmon resonance and increasing the intensity of light of a specific wavelength by a locally enhanced electric field.
  • plasmon refers to a phenomenon in which free electrons in a metal collectively vibrate.
  • Surface plasmon resonance (hereinafter also referred to as plasmon resonance) is a phenomenon in which when light is applied to a metal thin film, light interacts with free electrons in the metal under specific conditions, causing the light reflectance to change.
  • this plasmon resonance generates an electric field that is remarkably enhanced locally (an electric field that is about three orders of magnitude larger than the electric field of incident light).
  • plasmon resonance is caused by light having a wavelength of 300 nm to 500 nm of incident sunlight, and the light in the wavelength region is strengthened and absorbed by the light receiving layer 1.
  • the metal pattern 8 of the metal layer 2 is arranged at an interval a equal to or less than the wavelength for surface plasmon coupling, as shown in FIG. It is necessary to arrange it below the wavelength to be coupled. That is, the arrangement interval a of the metal pattern 8 and the pattern size b of the metal pattern 8 are set to be equal to or smaller than the wavelength of incident sunlight. Further, the relationship between the arrangement interval a and the pattern size b is a> b. In FIG.
  • the pattern size b has a circular width, that is, a diameter dimension.
  • the metal pattern is not circular (cylindrical) but has another shape such as a quadrangle (quadrangular column)
  • the pattern size is the dimension in the width direction. If the arrangement interval a and the pattern size b are longer than the wavelength for surface plasmon coupling, the coupling itself becomes weak, the electric field enhancing effect is lowered, and the efficiency is lowered.
  • FIG. 4 is a graph showing the relationship between the refractive index of the first dielectric layer 3 and the average reflectance in the short wavelength region (light wavelength: 300-500 nm). As shown in FIG. 4, by using the first dielectric layer 3 having a refractive index of 1.8 or more, the light absorption in the short wavelength region is increased and the average reflectance is reduced (here, the average reflectance). 20 or less).
  • FIG. 5 is a graph showing the relationship between the film thickness of the metal layer 2 and the average reflectance in the short wavelength region (light wavelength: 300-500 nm). As shown in FIG.
  • the metal layer 2 needs to have a film thickness of 20 nm or less.
  • the film thickness of the metal layer 2 is more preferably in the range of 5 nm to 20 nm (within this range, the average reflectance is 20 or less).
  • ⁇ Solar cell manufacturing method> 6A, 6B, and 6C are cross-sectional views illustrating the method for manufacturing the solar battery cell of the first embodiment. Each step of the method for manufacturing the solar cell having the above-described structure will be described with reference to FIGS. 6A to 6C.
  • a pn junction is formed on a silicon substrate, and the light receiving layer 1 is formed.
  • a cross-sectional view of the structure after formation is shown in FIG. 6A.
  • the pn junction is manufactured from a p-type semiconductor layer of a silicon substrate into which a p-type impurity is introduced and an n-type semiconductor layer into which an n-type impurity is introduced.
  • Impurity doping to the silicon substrate is formed by, for example, ion implantation, solid phase diffusion, or vapor phase diffusion.
  • the metal layer 2 is formed on the light receiving layer 1 by, for example, a sputtering method or a plating method, and further, a metal pattern 8 is formed on the metal layer 2 by, for example, a wet processing process or a dry processing process.
  • the metal pattern 8 can also be formed using, for example, a nanoimprint method.
  • FIG. 6B A cross-sectional view of the structure after formation is shown in FIG. 6B.
  • the metal layer 2 is composed of at least one material of Ag and Al.
  • the metal pattern 8 formed on the metal layer 2 has a periodic pattern structure smaller than the wavelength of incident sunlight.
  • the first dielectric layer 3, the second dielectric layer 4, and the third dielectric layer 5 are formed in this order by a film forming method such as a CVD method so as to cover the metal layer 2.
  • a film forming method such as a CVD method so as to cover the metal layer 2.
  • FIG. 6C A cross-sectional view of the structure after formation is shown in FIG. 6C.
  • the thickness t1 of the first dielectric layer 3 is set to 1 ⁇ 4 or less of the wavelength ( ⁇ ) of light. That is, the thickness t1 of the first dielectric layer 3 is set to a thickness ( ⁇ / 4) or less based on the wavelength of incident sunlight.
  • the film thickness t2 of the second dielectric layer 4 is set to 1 ⁇ 4 or less of the light wavelength ( ⁇ ) (thickness ( ⁇ / 4) or less based on the wavelength of incident sunlight).
  • the relationship between the film thickness t1 of the first dielectric layer 3, the film thickness t2 of the second dielectric layer 4, and the film thickness t3 of the third dielectric layer 5 is t1 ⁇ t3 and t2 ⁇ t3. is there.
  • the relationship between the refractive index n1 of the first dielectric layer 3, the refractive index n2 of the second dielectric layer 4, and the refractive index n3 of the third dielectric layer 5 is n3 ⁇ n2 ⁇ n1. is there. If the refractive index is reversed, the total amount of light reaching the light receiving layer 1 is reduced. Since the antireflection effect appears by using at least two kinds of dielectric layers, if necessary, two dielectric layers of the first dielectric layer 3 and the second dielectric layer 4 are used. Also good. Alternatively, three or more dielectric layers may be used. As for the material of the dielectric layer, the same effect can be obtained as long as it is a transparent dielectric material satisfying the above relationship (film thickness, reflectance).
  • SiN x is used for the first dielectric layer 3
  • SiON is used for the second dielectric layer 4
  • SiO 2 is used for the third dielectric layer 5.
  • a third dielectric layer 5 is preferably 1.45 or less in refractive index.
  • the front surface electrode 6 and the back surface electrode 7 are formed, and the front surface electrode 6 and the back surface electrode 7 are connected to the light receiving layer 1, whereby the solar battery cell shown in FIG. 1 can be obtained.
  • annealing may be performed in a nitrogen atmosphere and a hydrogen atmosphere when forming each layer.
  • the combination of the patterned metal layer 2 and the first dielectric layer 3 formed so as to cover the metal layer 2 corresponds to surface plasmon resonance in incident sunlight.
  • plasmon resonance occurs, and the electric field in the vicinity of the metal layer 2 is remarkably enhanced locally, improving the absorption efficiency of the light receiving layer 1.
  • an antireflection effect can be obtained at the same time. As a result, the effect of improving the conversion efficiency of the solar battery cell can be obtained by increasing the efficiency in the short wavelength region.
  • this technique can be applied to solar cells that utilize highly efficient multi-exciton generation, and the efficiency can be improved by multi-excitons in the short wavelength region. Therefore, according to the first embodiment, it is possible to provide a solar battery cell that achieves both efficiency improvement and reflectance reduction in the short wavelength region.
  • FIG. 7 is a cross-sectional view showing the vicinity of the metal layer of the solar battery cell according to the second embodiment.
  • an oxide film 9, a metal layer 2, a first dielectric layer 3, a second dielectric layer 4, and a first dielectric layer are formed on a light receiving layer 1 made of a substrate having a pn junction.
  • 3 is a solar battery cell in which three dielectric layers 5 are formed. The difference from the first embodiment is that an oxide film 9 is inserted between the light receiving layer 1 and the metal layer 2.
  • the light-receiving layer 1 has a pn junction composed of a p-type semiconductor layer such as a silicon substrate into which p-type impurities are introduced and an n-type semiconductor layer such as silicon into which n-type impurities are introduced.
  • a p-type semiconductor layer such as a silicon substrate into which p-type impurities are introduced
  • an oxide film 9 is formed on the light receiving layer 1 by thermal oxidation, and a nano pattern of the metal layer 2 such as Al or Ag is formed on the oxide film 9.
  • a first dielectric layer 3 is formed so as to cover the layer 2, a second dielectric layer 4 is formed on the first dielectric layer 3, and a third dielectric layer 4 is formed on the second dielectric layer 4.
  • the body layer 5 is formed.
  • the oxide film 9 is formed by thermally oxidizing the silicon surface.
  • the thickness of the oxide film 9 will be described with reference to FIG.
  • FIG. 8 is a graph showing the relationship between the thickness of the oxide film 9 and the average reflectance (light wavelength: 300-500 nm) in the short wavelength region.
  • the thickness of the oxide film 9 is preferably 20 nm or less because the surface plasmon coupling tends to weaken and reflectivity increases as the film thickness increases.
  • plasmon resonance is generated by light having a wavelength of 300 nm to 500 nm of incident sunlight, and the light in the wavelength region is strengthened and absorbed by the light receiving layer 1. I am doing so.
  • the metal pattern 8 of the metal layer 2 is arranged at an interval a which is not more than the wavelength for surface plasmon coupling, and the pattern size b is also arranged to be not more than the wavelength for surface plasmon coupling. It will be necessary. If the arrangement interval a and the pattern size b are longer than the wavelength for surface plasmon coupling, the coupling itself becomes weak, the electric field enhancing effect is lowered, and the efficiency is lowered.
  • the refractive index of the first dielectric layer 3 is It becomes important. As in the first embodiment, by using the first dielectric layer 3 having a refractive index of 1.8 or more, light absorption in the short wavelength region increases, and the reflectance can be reduced.
  • the metal layer 2 and the first dielectric layer 3 patterned in a periodic pattern structure smaller than the wavelength of incident sunlight are combined with the second dielectric layer 4 and the third dielectric layer 5. Therefore, the antireflection effect is enhanced.
  • the metal layer 2 functions as a reflection layer when the film thickness is increased.
  • the metal layer 2 has a film thickness of 20 nm in order to simultaneously enhance the antireflection effect. It is as follows.
  • the first dielectric layer 3, the second dielectric layer 4, and the third dielectric layer 5 are arranged in this order so as to cover the metal layer 2, for example. It is formed by a film forming method such as a CVD method.
  • the thickness t1 of the first dielectric layer 3 is set to 1 ⁇ 4 or less of the wavelength ( ⁇ ) of light. If the film thickness of the first dielectric layer 3 is 1 ⁇ 4 or more of the wavelength of light, the reflectance in the short wavelength region increases due to optical interference, causing a reduction in efficiency. Further, the film thickness t2 of the second dielectric layer 4 is set to 1 ⁇ 4 or less of the wavelength ( ⁇ ) of light.
  • the relationship between the film thickness t1 of the first dielectric layer 3, the film thickness t2 of the second dielectric layer 4, and the film thickness t3 of the third dielectric layer 5 is t1 ⁇ t3 and t2 ⁇ t3. is there.
  • the relationship between the refractive index n1 of the first dielectric layer 3, the refractive index n2 of the second dielectric layer 4, and the refractive index n3 of the third dielectric layer 5 is n3 ⁇ n2 ⁇ n1. is there. If the refractive index is reversed, the total amount of light reaching the light receiving layer 1 is reduced. Since the antireflection effect appears by using at least two types of dielectric layers, two or more dielectric layers may be used as necessary. As for the material of the dielectric layer, the same effect can be obtained as long as it is a transparent dielectric material satisfying the above relationship. For example, SiN x is used for the first dielectric layer 3, SiON is used for the second dielectric layer 4, and SiO 2 is used for the third dielectric layer 5.
  • the third dielectric layer 5 preferably has a refractive index of 1.45 or less.
  • the solar cell can be obtained by forming the front electrode 6 and the back electrode 7 and connecting the front electrode 6 and the back electrode 7 to the light receiving layer 1. If necessary, annealing may be performed in a nitrogen atmosphere and a hydrogen atmosphere when forming each layer.
  • a combination of the patterned metal layer 2 and the first dielectric layer 3 formed so as to cover the metal layer 2 allows light corresponding to surface plasmon resonance in incident sunlight.
  • plasmon resonance occurs, and the electric field in the vicinity of the metal layer 2 is remarkably enhanced locally, thereby improving the absorption efficiency of the light receiving layer 1.
  • an antireflection effect can be obtained at the same time.
  • the effect of improving the conversion efficiency of the solar battery cell can be obtained by increasing the efficiency in the short wavelength region.
  • this technique can be applied to solar cells that utilize highly efficient multi-exciton generation, and the efficiency can be improved by multi-excitons in the short wavelength region. Therefore, according to the second embodiment, it is possible to provide a solar battery cell that achieves both efficiency improvement and reflectance reduction in the short wavelength region.
  • the oxide film 9 by inserting the oxide film 9, the trap level density on the silicon surface can be suppressed, so that the efficiency in the short wavelength region can be further improved.
  • Embodiment 3 will be described with reference to FIG.
  • the third embodiment is an example of a solar battery system using the solar battery cells described in the first and second embodiments.
  • FIG. 9 is a configuration diagram showing a solar battery system using the solar battery cell according to the third embodiment.
  • the third embodiment is a solar battery system using the solar battery cells of the first and second embodiments.
  • the solar cell system includes a solar cell panel 11, a connection box 12, a current collection box 13, a power conditioner 14, and a transformer 15.
  • Solar cell panel 11 is a solar cell panel in which a plurality of solar cells described in the first and second embodiments are arranged. This solar cell panel 11 is a panel that generates electric power by sunlight.
  • the connection box 12 is a connection box that transmits the electric power generated by the solar cell panel 11 to the current collection box 13.
  • the current collection box 13 is a current collection box that collects the electric power transmitted from the connection box 12 and transmits it to the power conditioner 14.
  • the power conditioner 14 is a converter that converts the electric power transmitted from the current collection box 13 from direct current to alternating current and transmits the electric power to the transformer 15.
  • the transformer 15 is a transformer that transforms the voltage of the AC power transmitted from the power conditioner 14 and transmits it to the commercial power system 16.
  • three power conditioners 14 and a current collection box 13 are connected to one transformer 15 connected to the commercial power system 16. Further, a three-system connection box 12 and a solar cell panel 11 are connected to each one-system power conditioner 14 and current collection box 13.
  • the electric power generated by the solar cell panel 11 is transmitted to the connection box 12 and collected by the current collection box 13. Thereafter, the power conditioner 14 converts the current from direct current to alternating current, transforms the voltage together with the transformer 15, and connects to the commercial power system 16.
  • the said structure is a structural example of the mega solar system with many panel numbers especially in a solar cell system. In the case of a residential system with a relatively small number of panels, it is directly connected to the power conditioner 14 from the connection box 12.
  • the solar cell system of Embodiment 3 can be realized.
  • the solar cell system according to the third embodiment it is possible to increase the efficiency of solar power generation by taking advantage of the effect of the solar cell structure.
  • This invention has the following characteristics as a manufacturing method of a photovoltaic cell. (1) a first step of forming a substrate having a pn junction; A second step of forming a metal layer having a periodic pattern structure smaller than the wavelength of incident light on the substrate; A third step of forming a first dielectric layer so as to cover the metal layer; Have In the third step, the method of manufacturing a solar battery cell, wherein the thickness of the first dielectric layer is set to a thickness ( ⁇ / 4) or less based on the wavelength of the incident light.
  • the second step includes a step of forming a metal pattern of the periodic pattern structure as the metal layer,
  • the arrangement interval a of the metal pattern and the pattern size b of the metal pattern are set to be equal to or less than the wavelength of the incident light,
  • the manufacturing method of the photovoltaic cell which makes the relationship of the arrangement
  • the material of the metal layer is composed of at least one of Ag and Al, The manufacturing method of the photovoltaic cell which makes the film thickness of the said metal layer 5 nm or more and 20 nm or less.
  • a method for manufacturing a solar battery cell wherein the refractive index of the first dielectric layer is 1.8 or more.
  • the film thickness t2 of the second dielectric layer is set to a thickness ( ⁇ / 4) or less based on the wavelength of the incident light, A method for manufacturing a solar battery cell, wherein a relationship between a film thickness t3 of the third dielectric layer and a film thickness t2 of the second dielectric layer satisfies t3> t2.
  • a first step of forming a substrate having a pn junction A second step of forming an oxide film on the substrate; A third step of forming a metal layer having a periodic pattern structure smaller than the wavelength of incident light on the oxide film; A fourth step of forming a first dielectric layer so as to cover the metal layer; Have In the fourth step, the method of manufacturing a solar battery cell, wherein the thickness of the first dielectric layer is set to a thickness ( ⁇ / 4) or less based on the wavelength of the incident light.
  • the manufacturing method of the photovoltaic cell which sets the film thickness of the said oxide film to 20 nm or less.
  • the third step includes a step of forming a metal pattern of the periodic pattern structure as the metal layer, The arrangement interval a of the metal pattern and the pattern size b of the metal pattern are set to be equal to or less than the wavelength of the incident light, The manufacturing method of the photovoltaic cell which makes the relationship of the arrangement
  • the material of the metal layer is composed of at least one of Ag and Al, The manufacturing method of the photovoltaic cell which makes the film thickness of the said metal layer 5 nm or more and 20 nm or less.
  • the film thickness t2 of the second dielectric layer is set to a thickness ( ⁇ / 4) or less based on the wavelength of the incident light, A method for manufacturing a solar battery cell, wherein a relationship between a film thickness t3 of the third dielectric layer and a film thickness t2 of the second dielectric layer satisfies t3> t2.
  • This invention has the following characteristics as a solar cell system.
  • (21) a solar panel in which a plurality of solar cells are arranged;
  • a power conditioner that converts electric power generated by the solar cell panel from direct current to alternating current;
  • a transformer that transforms AC power converted by the power conditioner and outputs the transformed power to the power system;
  • the solar battery cell is a substrate having a pn junction;
  • Have The thickness of the first dielectric layer is a solar cell system having a thickness ( ⁇ / 4) or less based on the wavelength of the incident light.
  • (22) a solar cell panel in which a plurality of solar cells are arranged;
  • a power conditioner that converts electric power generated by the solar cell panel from direct current to alternating current;
  • a transformer that transforms AC power converted by the power conditioner and outputs the transformed power to the power system;
  • the solar battery cell is a substrate having a pn junction;
  • the thickness of the first dielectric layer is a solar cell system having a thickness ( ⁇ / 4) or less based on the wavelength of the incident light.

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Abstract

Selon un mode de réalisation, la présente invention concerne une cellule solaire comprenant : une couche de réception de lumière (1) formée d'un substrat comportant une jonction pn ; une couche de métal (2), qui est formée sur la couche de réception de lumière (1), et qui comporte une structure de motif périodique qui est plus petite que la longueur d'onde de la lumière devant être introduite ; et une première couche de matériau diélectrique (3) qui est formée pour couvrir la couche de métal (2). L'épaisseur de film de la première couche de matériau diélectrique (3) est inférieure ou égale à une épaisseur (λ/4) basée sur la longueur d'onde de la lumière devant être introduite. Grâce à une telle structure de cellule solaire, une cellule solaire assurant en même temps une amélioration du rendement et une réduction de la réflectance d'une région de courtes longueurs d'onde peut être obtenue.
PCT/JP2014/065012 2014-06-05 2014-06-05 Cellule solaire WO2015186230A1 (fr)

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