WO2015182228A1 - Actionneur piézoélectrique, procédé de fabrication d'un actionneur piézoélectrique, tête de jet d'encre, et imprimante à jet d'encre - Google Patents

Actionneur piézoélectrique, procédé de fabrication d'un actionneur piézoélectrique, tête de jet d'encre, et imprimante à jet d'encre Download PDF

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Publication number
WO2015182228A1
WO2015182228A1 PCT/JP2015/058710 JP2015058710W WO2015182228A1 WO 2015182228 A1 WO2015182228 A1 WO 2015182228A1 JP 2015058710 W JP2015058710 W JP 2015058710W WO 2015182228 A1 WO2015182228 A1 WO 2015182228A1
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film
thin film
piezoelectric thin
piezoelectric
upper electrode
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PCT/JP2015/058710
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English (en)
Japanese (ja)
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三嘉 宮井
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コニカミノルタ株式会社
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings

Definitions

  • the present invention relates to a piezoelectric actuator having a lower electrode, a piezoelectric thin film and an upper electrode on a substrate, a method for manufacturing the piezoelectric actuator, an inkjet head, and an inkjet printer.
  • piezoelectric materials such as lead zirconate titanate (PZT) have been used as electromechanical conversion elements such as drive elements and sensors.
  • MEMS Micro Electro Mechanical Systems
  • Si silicon
  • high-precision processing using semiconductor process technology such as film formation and photolithography can be performed, and miniaturization and high density can be realized.
  • the elements can be collectively processed on a large-area wafer, the cost can be reduced.
  • there is an advantage that the conversion efficiency of mechanical electricity is improved and the characteristics of the drive element and the sensitivity of the sensor are improved.
  • An inkjet printer is known as an application example of a device using such a MEMS element.
  • a two-dimensional image is recorded on a recording medium by controlling the ejection of ink while moving an inkjet head having a plurality of channels for ejecting liquid ink relative to the recording medium such as paper or cloth. Formed.
  • the ink can be ejected by using a pressure actuator (piezoelectric, electrostatic, thermal deformation, etc.) or by generating bubbles in the ink inside the tube by heat.
  • a pressure actuator piezoelectric, electrostatic, thermal deformation, etc.
  • the piezoelectric actuator has advantages such as high output, modulation, high responsiveness, and choice of ink, and has been frequently used in recent years.
  • it is suitable to use an inkjet head using a thin film piezoelectric body.
  • the ink jet head is required to be capable of ejecting ink having a high viscosity of 10 cp (0.01 Pa ⁇ s) or more.
  • the piezoelectric thin film (ferroelectric thin film) requires high piezoelectric characteristics (piezoelectric constant d 31 ) and displacement generation force (film thickness of 1 ⁇ m or more).
  • methods for forming a piezoelectric material such as PZT on a substrate such as Si include chemical film formation methods such as CVD (Chemical Vapor Deposition), physical methods such as sputtering and ion plating, and sol-gel.
  • CVD Chemical Vapor Deposition
  • physical methods such as sputtering and ion plating
  • sol-gel sol-gel
  • the growth method in the liquid phase such as the method is known.
  • the upper limit of the thickness of the thin film obtained by these manufacturing methods is about 10 ⁇ m. If the film thickness exceeds that, cracks and film peeling occur, and desired characteristics cannot be obtained.
  • the deposited PZT exhibits a good piezoelectric effect when the crystal has a perovskite structure.
  • the perovskite structure ideally has a cubic unit cell, and is arranged at each vertex of the cubic A, metal B arranged at the body center, and arranged at each face center of the cubic crystal. It is an ABO 3 type crystal structure composed of oxygen O. Crystals having a perovskite structure include tetragonal crystals, orthorhombic crystals, rhombohedral crystals and the like in which cubic crystals are distorted.
  • the PZT thin film formed on the electrode on the Si substrate becomes a polycrystal composed of an aggregate of a plurality of crystals due to a difference in lattice constant from the crystal of the electrode.
  • this polycrystal is composed of granular crystals (granular crystals) with a particle size of several hundreds of nanometers, or a width of several hundreds of nanometers and one elongated crystal grain in the film thickness direction. A certain columnar crystal is gathered together.
  • Patent Document 1 an insulator layer is formed on the lower electrode so as to cover the piezoelectric thin film and the upper electrode. Since the side surface of the piezoelectric thin film is shielded from the atmosphere by the insulator layer, it is possible to prevent the occurrence of side leakage due to the intake of moisture in the atmosphere. However, in the configuration in which the piezoelectric thin film is covered with the insulator layer, the piezoelectric layer is deteriorated because displacement (stretching) of the piezoelectric thin film is inhibited by the insulator layer.
  • Patent Document 2 the surface of the piezoelectric thin film is polished and smoothed, thereby eliminating the location where the electric field concentrates between the upper electrode and the lower electrode (the recessed area on the surface of the piezoelectric thin film). The withstand voltage is improved without deteriorating the piezoelectric characteristics.
  • the piezoelectric thin film is composed of a polycrystalline body in which crystals having different particle sizes are mixed. By mixing small crystal grains with large crystal grains, gaps are prevented from forming at the grain boundaries between the large crystal grains, and the insulation and piezoelectric characteristics of the piezoelectric thin film are improved. ing.
  • Patent Document 4 by forming a low dielectric material in a region where the grain boundary of the piezoelectric thin film is exposed, leakage current flowing through the grain boundary of the piezoelectric thin film is reduced and voltage resistance is improved. Yes.
  • the low dielectric material is such that the surplus composition generated in the crystal growth process due to the firing of the piezoelectric thin film is driven to the grain boundary as the crystal grain of the piezoelectric thin film grows, and is finally passed through the grain boundary. It is thought that it was pushed to the surface layer.
  • JP-A-10-226071 see claims 1 and 6, paragraphs [0006], [0023], [0025], [0038], FIG. 2, FIG. 3 etc.
  • JP-A-10-264385 (refer to claim 1, paragraphs [0032], [0034], [0054], FIG. 3, etc.)
  • Japanese Patent Laid-Open No. 2002-084012 see claims 1 and 2, paragraphs [0004], [0006], [0034], [0065], FIG. 3, FIG. 6, FIG. 7, etc.
  • Japanese Patent Laid-Open No. 10-217458 (refer to claim 1, paragraphs [0007] and [0035], FIG. 2, FIG. 3, and FIG. 5)
  • the present invention has been made in order to solve the above-described problems, and its purpose is to prevent dielectric breakdown and leakage current (side leakage) of the piezoelectric thin film without impairing the displacement of the piezoelectric thin film and deteriorating the piezoelectric characteristics.
  • the present invention provides a piezoelectric actuator and a method for manufacturing the same, an ink jet head provided with the piezoelectric actuator, and an ink jet printer.
  • a piezoelectric actuator is a piezoelectric actuator having a lower electrode, a piezoelectric thin film, and an upper electrode in this order on a substrate, wherein the piezoelectric thin film includes a polycrystalline film including a plurality of crystals, and a plurality of piezoelectric films. And an altered film in which grain boundaries have disappeared due to integral alteration of the crystal, and the altered film is formed at least in a region protruding from the outer shape of the upper electrode in the piezoelectric thin film on the lower electrode. And is exposed on the surface opposite to the substrate in the region.
  • a method of manufacturing a piezoelectric actuator includes a step of forming a lower electrode on a substrate, and forming a piezoelectric thin film by forming a polycrystalline film including a plurality of crystals on the lower electrode.
  • a plurality of crystals contained in the polycrystalline film are integrally modified to form a modified film in which the grain boundaries disappear, on at least the surface of the region.
  • FIG. 1 is an explanatory diagram illustrating a schematic configuration of an inkjet printer according to an embodiment of the present invention.
  • FIG. FIG. 2 is a plan view showing a schematic configuration of an actuator of an ink jet head provided in the ink jet printer, and a cross-sectional view taken along line A-A ′ in the plan view. It is sectional drawing of the said inkjet head. It is sectional drawing which shows the detailed structure of the said actuator. It is explanatory drawing which shows typically the horizontal cross section of the polycrystalline film and alteration film which comprise the piezoelectric thin film of the said actuator. It is sectional drawing of the piezoelectric actuator which does not have the said altered film. It is sectional drawing which shows the manufacturing process of the said inkjet head.
  • the numerical value range includes the values of the lower limit A and the upper limit B.
  • FIG. 1 is an explanatory diagram illustrating a schematic configuration of an inkjet printer 1 according to the present embodiment.
  • the ink jet printer 1 is a so-called line head type ink jet recording apparatus in which an ink jet head 21 is provided in a line shape in the width direction of a recording medium in the ink jet head unit 2.
  • the ink jet printer 1 includes an ink jet head unit 2, a feed roll 3, a take-up roll 4, two back rolls 5 and 5, an intermediate tank 6, a liquid feed pump 7, a storage tank 8, and a fixing tank. And a mechanism 9.
  • the inkjet head unit 2 ejects ink from the inkjet head 21 toward the recording medium P to perform image formation (drawing) based on image data, and is disposed in the vicinity of one back roll 5. Details of the inkjet head 21 will be described later.
  • the feeding roll 3, the take-up roll 4 and the back rolls 5 are members each having a cylindrical shape that can rotate around its axis.
  • the feeding roll 3 is a roll that feeds the long recording medium P wound around the circumferential surface toward the position facing the inkjet head unit 2.
  • the feeding roll 3 is rotated by driving means (not shown) such as a motor, thereby feeding the recording medium P in the X direction in FIG.
  • the take-up roll 4 is taken out from the take-out roll 3 and takes up the recording medium P on which the ink is ejected by the inkjet head unit 2 around the circumferential surface.
  • Each back roll 5 is disposed between the feed roll 3 and the take-up roll 4.
  • One back roll 5 located on the upstream side in the conveyance direction of the recording medium P is opposed to the inkjet head unit 2 while winding the recording medium P fed by the feeding roll 3 around and supporting the recording medium P.
  • Transport toward The other back roll 5 conveys the recording medium P from a position facing the inkjet head unit 2 toward the take-up roll 4 while being wound around and supported by a part of the peripheral surface.
  • the intermediate tank 6 temporarily stores the ink supplied from the storage tank 8.
  • the intermediate tank 6 is connected to a plurality of ink tubes 10, adjusts the back pressure of ink in each inkjet head 21, and supplies ink to each inkjet head 21.
  • the liquid feed pump 7 supplies the ink stored in the storage tank 8 to the intermediate tank 6, and is arranged in the middle of the supply pipe 11.
  • the ink stored in the storage tank 8 is pumped up by the liquid feed pump 7 and supplied to the intermediate tank 6 through the supply pipe 11.
  • the fixing mechanism 9 fixes the ink ejected to the recording medium P by the inkjet head unit 2 on the recording medium P.
  • the fixing mechanism 9 includes a heater for heat-fixing the discharged ink on the recording medium P, a UV lamp for curing the ink by irradiating the discharged ink with UV (ultraviolet light), and the like. Yes.
  • the recording medium P fed from the feeding roll 3 is conveyed to the position facing the inkjet head unit 2 by the back roll 5, and ink is ejected from the inkjet head unit 2 to the recording medium P. Thereafter, the ink ejected onto the recording medium P is fixed by the fixing mechanism 9, and the recording medium P after ink fixing is taken up by the take-up roll 4.
  • the line head type inkjet printer 1 ink is ejected while the recording medium P is conveyed while the inkjet head unit 2 is stationary, and an image is formed on the recording medium P.
  • the ink jet printer 1 may be configured to form an image on a recording medium by a serial head method.
  • the serial head method is a method of forming an image by ejecting ink by moving an inkjet head in a direction orthogonal to the transport direction while transporting a recording medium.
  • FIG. 2 is a plan view showing a schematic configuration of the actuator 21a (piezoelectric actuator) of the inkjet head 21 and a cross-sectional view taken along the line AA ′ in the plan view.
  • FIG. 3 is a cross-sectional view of the inkjet head 21 in which the nozzle substrate 31 is joined to the actuator 21a of FIG.
  • the inkjet head 21 has a thermal oxide film 23, a lower electrode 24, a piezoelectric thin film 25, and an upper electrode 26 in this order on a substrate 22 having a plurality of pressure chambers 22a (openings).
  • the substrate 22 is composed of a semiconductor substrate made of a single crystal Si (silicon) alone having a thickness of, for example, about 300 to 750 ⁇ m, or an SOI (Silicon On Insulator) substrate.
  • FIG. 2 shows a case where the substrate 22 is configured by an SOI substrate.
  • the SOI substrate is obtained by bonding two Si substrates through an oxide film.
  • the upper wall of the pressure chamber 22a in the substrate 22 (the wall positioned on the side where the piezoelectric thin film 25 is formed with respect to the pressure chamber 22a) constitutes a vibration plate 22b serving as a driven film. Along with this displacement (vibration), pressure is applied to the ink in the pressure chamber 22a.
  • the thermal oxide film 23 is made of, for example, SiO 2 (silicon oxide) having a thickness of about 0.1 ⁇ m, and is formed for the purpose of protecting and insulating the substrate 22.
  • the lower electrode 24 is a common electrode provided in common to the plurality of pressure chambers 22a, and is configured by laminating a Ti (titanium) layer and a Pt (platinum) layer.
  • the Ti layer is formed in order to improve the adhesion between the thermal oxide film 23 and the Pt layer.
  • the thickness of the Ti layer is, for example, about 0.02 ⁇ m, and the thickness of the Pt layer is, for example, about 0.1 ⁇ m.
  • the piezoelectric thin film 25 is composed of a ferroelectric thin film made of, for example, PZT (lead zirconate titanate), and is provided corresponding to each pressure chamber 22a.
  • the film thickness of the piezoelectric thin film 25 is, for example, not less than 1 ⁇ m and not more than 10 ⁇ m.
  • the upper electrode 26 is an individual electrode provided corresponding to each pressure chamber 22a, and is configured by laminating a Ti layer and a Pt layer.
  • the Ti layer is formed in order to improve the adhesion between the piezoelectric thin film 25 and the Pt layer.
  • the thickness of the Ti layer is, for example, about 0.02 ⁇ m, and the thickness of the Pt layer is, for example, about 0.1 to 0.2 ⁇ m.
  • the upper electrode 26 is provided so as to sandwich the piezoelectric thin film 25 from the film thickness direction with the lower electrode 24. Note that a layer made of gold (Au) may be formed instead of the Pt layer.
  • the lower electrode 24, the piezoelectric thin film 25, and the upper electrode 26 constitute a thin film piezoelectric element 27 for discharging ink in the pressure chamber 22a to the outside.
  • the thin film piezoelectric element 27 is driven based on a voltage (drive signal) applied from the drive circuit 28 to the lower electrode 24 and the upper electrode 26.
  • the ink jet head 21 is formed by arranging the thin film piezoelectric element 27 and the pressure chamber 22a vertically and horizontally.
  • a nozzle substrate 31 is bonded to the opposite side of the pressure chamber 22a from the diaphragm 22b.
  • the nozzle substrate 31 is formed with ejection holes (nozzle holes) 31a for ejecting ink stored in the pressure chambers 22a to the outside as ink droplets.
  • Ink supplied from the intermediate tank 6 is stored in the pressure chamber 22a.
  • the piezoelectric thin film 25 when a voltage is applied from the drive circuit 28 to the lower electrode 24 and the upper electrode 26, the piezoelectric thin film 25 is in a direction perpendicular to the thickness direction (substrate) according to the potential difference between the lower electrode 24 and the upper electrode 26. (Direction parallel to the surface of 22). Then, due to the difference in length between the piezoelectric thin film 25 and the diaphragm 22b, a curvature is generated in the diaphragm 22b, and the diaphragm 22b is displaced (curved or vibrated) in the thickness direction.
  • the inkjet head 21a of the present embodiment since the voltage resistance of the piezoelectric thin film 25 of the piezoelectric actuator 21a is high, a high electric field can be applied to the piezoelectric thin film 25. As a result, it is possible to discharge ink using high-viscosity ink, and it is possible to realize the inkjet printer 1 that is advantageous for high-speed and high-definition drawing.
  • FIG. 4 is a cross-sectional view showing a detailed configuration of the piezoelectric actuator 21a.
  • the thermal oxide film 23 is not shown for convenience.
  • the piezoelectric thin film 25 of the piezoelectric actuator 21a has a polycrystalline film 25p and an altered film 25m.
  • the polycrystalline film 25p is a film made of an aggregate of a plurality of crystals (for example, columnar crystals).
  • the altered film 25m is a film in which grain boundaries disappear due to integral alteration of a plurality of crystals, and is, for example, an amorphous structure (amorphous) film.
  • alteration refers to a change in the properties of a substance, but here, an aggregate of a plurality of crystals having a grain boundary (polycrystalline structure) is integrated into a structure having no grain boundary (for example, By changing to an (amorphous structure), it means eliminating the property of allowing moisture in the atmosphere to permeate through grain boundaries.
  • alteration can be realized by irradiating a laser beam of a predetermined wavelength to a film having a polycrystalline structure and heating it to melt and solidify the irradiated portion.
  • FIG. 5 schematically shows a horizontal cross section of the polycrystalline film 25p and the altered film 25m observed with a scanning electron microscope (SEM). As shown in the figure, in the polycrystalline film 25p, there are grain boundaries between the crystals, but in the altered film 25m, there is no grain boundary as seen in the polycrystalline film 25p. It has a crystalline structure.
  • the piezoelectric thin film 25 has a terrace region R1 (a portion where the piezoelectric thin film 25 protrudes without being covered by the upper electrode 26) protruding from the outer shape of the upper electrode 26 on the lower electrode 24. That is, the piezoelectric thin film 25 is sandwiched between the lower electrode 24 and the upper electrode 26 in portions other than the terrace region R1.
  • the above-described altered film 25m is formed at least in the terrace region R1. More specifically, in the terrace region R1 of the piezoelectric thin film 25, the polycrystalline film 25p and the altered film 25m are laminated in this order from the substrate 22 side. As a result, the altered film 25m is exposed on the surface opposite to the substrate 22 in the terrace region R1.
  • the side surface (end surface) of the upper electrode 26 is separated from the side surface (end surface) of the piezoelectric thin film 25, and these side surfaces are not located on the same plane.
  • FIG. 6 is a cross-sectional view of the piezoelectric actuator 21a 'when the altered film 25m is not formed in the terrace region R1.
  • the terrace region R1 moisture in the atmosphere is taken into the inside from the surface opposite to the substrate 22 of the piezoelectric thin film 25 through the crystal grain boundary of the polycrystalline film 25p. It is considered that dielectric breakdown of the piezoelectric thin film 25 occurs and a leak current is likely to occur between the end portion of the upper electrode 26 and the lower electrode 24.
  • a modified film 25m is formed in the terrace region R1, and the modified film 25m is exposed on the surface opposite to the substrate 22 in the terrace region R1. It is possible to suppress the moisture from being taken into the inside of the piezoelectric thin film 25 by the altered film 25m having no grain boundary. Thereby, dielectric breakdown of the piezoelectric thin film 25 caused by the moisture and generation of leakage current can be suppressed, and voltage resistance can be improved. That is, it is possible to suppress the occurrence of a leak current other than the side surface of the piezoelectric thin film 25.
  • the piezoelectric thin film 25 is covered with an insulating layer or the like and cut off from the atmosphere, for example, the insulator Unlike the conventional case where the layer is provided, the piezoelectric characteristics are not deteriorated due to the inhibition of the displacement of the piezoelectric thin film 25.
  • the altered film 25m has an amorphous structure having no grain boundary, it is possible to reliably suppress moisture in the atmosphere from being taken into the multilayer film 25a via the altered film 25m. As a result, it is possible to reliably obtain the above-described effects such as the improvement of the voltage resistance by suppressing the occurrence of dielectric breakdown and leakage current due to the moisture.
  • the lower electrode 24 and the substrate 22 exist on the substrate 22 side of the piezoelectric thin film 25, and do not come into contact with the atmosphere.
  • the opposite side of the piezoelectric thin film 25 from the substrate 22 is in direct contact with the atmosphere.
  • the altered film 25m is formed by alteration of PZT constituting the polycrystalline film 25p, and the material itself is the same as the polycrystalline film 25p. Therefore, since the polycrystalline film 25p and the altered film 25m are formed in this order from the substrate 22 side and have a laminated structure of the same material, it is possible to ensure high adhesion between these films.
  • the above-described altered film 25m is formed by altering the polycrystalline structure by laser light irradiation as described above (the entire manufacturing method of the piezoelectric actuator 21a will be described later).
  • the altered film 25m is thickened, there is a concern that the lower electrode 24 and the substrate 22 located in the lower layer of the polycrystalline film 25p may be deteriorated by high heat during laser light irradiation.
  • the thickness of the altered film 25m is preferably thinner than the thickness of the polycrystalline film 25p (formed on the substrate 22 side of the altered film 25m) below that.
  • the total thickness of the piezoelectric thin film 25 is 1 to 10 ⁇ m.
  • the thickness of the altered film 25 m is desirably 1/10 or less of the total thickness of the piezoelectric thin film 25. / 50 or less is more desirable.
  • the altered film 25m is surely thinner than the underlying polycrystalline film 25p, so that deterioration of the lower electrode 24 and the substrate 22 due to high heat during the formation of the altered film 25 can be suppressed.
  • the thickness of the altered film 25m is preferably 5 nm or more, more preferably 10 nm or more, and further preferably 20 nm or more. In order to ensure that the altered film 25m has a function of exhibiting a moisture-proof effect, it is desirable to secure at least 5 nm as the thickness of the altered film 25m.
  • FIG. 7 is a cross-sectional view showing the manufacturing process of the inkjet head 21.
  • the substrate 22 is prepared.
  • crystalline silicon (Si) often used in MEMS (Micro Electro Mechanical Systems) can be used.
  • MEMS Micro Electro Mechanical Systems
  • two Si substrates 22 c and 22 d are joined via an oxide film 22 e.
  • An SOI structure is used.
  • the substrate 22 is put in a heating furnace and held at about 1500 ° C. for a predetermined time, and thermal oxide films 23a and 23b made of SiO 2 are formed on the surfaces of the Si substrates 22c and 22d, respectively.
  • thermal oxide films 23a and 23b made of SiO 2 are formed on the surfaces of the Si substrates 22c and 22d, respectively.
  • Ti and Pt layers are sequentially formed on one thermal oxide film 23a by a sputtering method to form the lower electrode 24.
  • the substrate 22 is reheated to about 600 ° C., and a PZT layer 25a serving as a displacement film is formed by sputtering.
  • the layer 25a made of PZT is a polycrystalline film 25p made of an aggregate of a plurality of crystals.
  • a photosensitive resin 35 is applied to the substrate 22 by a spin coating method, and unnecessary portions of the photosensitive resin 35 are removed by exposure and etching through a mask, and the shape of the piezoelectric thin film 25 to be formed is transferred. . Thereafter, using the photosensitive resin 35 as a mask, the shape of the layer 25 a is processed using a reactive ion etching method to form the piezoelectric thin film 25.
  • Ti and Pt layers are sequentially formed by sputtering on the lower electrode 24 so as to cover the piezoelectric thin film 25 to form a layer 26a.
  • a photosensitive resin 36 is applied onto the layer 26a by a spin coating method, and unnecessary portions of the photosensitive resin 36 are removed by exposure and etching through a mask, and the shape of the upper electrode 26 to be formed is transferred. To do.
  • the shape of the layer 26a is processed using a reactive ion etching method to form the upper electrode 26.
  • the upper electrode 26 is formed on the piezoelectric thin film 25 so that the terrace region R ⁇ b> 1 that protrudes from the outer shape of the upper electrode 26 is formed in the piezoelectric thin film 25.
  • the surface of the piezoelectric thin film 25 opposite to the substrate 22 in the terrace region R1 is heated by laser light irradiation, so that the plurality of crystals constituting the polycrystalline film 25p are integrally altered to thereby change the terrace region.
  • an altered film 25m having a grain boundary disappeared is formed on the surface of R1.
  • a photosensitive resin 37 is applied to the back surface (thermal oxide film 23b side) of the substrate 22 by a spin coat method, and unnecessary portions of the photosensitive resin 37 are removed by exposure and etching through a mask.
  • the shape of the pressure chamber 22a to be formed is transferred.
  • the substrate 22 is removed using a reactive ion etching method to form a pressure chamber 22a to be an actuator 21a.
  • the substrate 22 of the actuator 21a and the nozzle substrate 31 having the discharge holes 31a are bonded using an adhesive or the like. Thereby, the inkjet head 21 is completed.
  • an intermediate glass having a through hole at a position corresponding to the discharge hole 31a is used, the thermal oxide film 23b is removed, and the substrate 22 and the intermediate glass, and the intermediate glass and the nozzle substrate 31 are anodic bonded to each other. Also good. In this case, the three parties (substrate 22, intermediate glass, nozzle substrate 31) can be joined without using an adhesive.
  • the piezoelectric thin film 25 by forming the terrace region R1 that protrudes from the outer shape of the upper electrode 26, the side surface of the upper electrode 26 and the side surface of the piezoelectric thin film 25 are separated, so that an electric field is applied to the side surface of the piezoelectric thin film. There is nothing. Thereby, generation
  • the altered film 25m is formed by heating the surface opposite to the substrate 22 in the terrace region R1 of the piezoelectric thin film 25
  • moisture in the atmosphere is taken into the inside from the surface of the piezoelectric thin film 25.
  • Can be suppressed it is possible to suppress the dielectric breakdown due to the moisture and the occurrence of leak currents other than the side surfaces of the piezoelectric thin film 25.
  • the insulator layer which covers the piezoelectric thin film 25 is not formed, the problem of deterioration of the piezoelectric characteristics due to the insulator layer does not occur.
  • the altered film 25m can be formed by performing local heating for heating only the surface of the piezoelectric thin film 25. Such local heating can prevent excessive high heat from being applied to the substrate 22 and the lower electrode 24 under the piezoelectric thin film 25, so that deterioration of these members can be prevented.
  • FIG. 8 is a graph showing the spectral transmittance of PZT which is a constituent material of the piezoelectric thin film 25.
  • the laser beam used for local heating of the piezoelectric thin film 25 may be any wavelength that does not transmit PZT but can be absorbed by PZT and heat its surface. If laser light having a wavelength that passes through the piezoelectric thin film 25 is irradiated, the laser light may pass through the piezoelectric thin film 25 and damage the base (the lower electrode 24 and the substrate 22). From this viewpoint, it is desirable that the wavelength of the laser beam to be used is a wavelength at which the transmittance when transmitting through the piezoelectric thin film 25 is 50% or less.
  • heating PZT when heating PZT, as shown in FIG. 8, it is desirable to use laser light having a wavelength of 400 nm or less, and more desirably, laser light having a wavelength of 360 nm or less. Note that ovens and hot plates should not be used because instantaneous local heating is difficult.
  • FIG. 9 is a cross-sectional view showing another configuration of the piezoelectric actuator 21a.
  • the altered film 25m may be formed over the entire film thickness direction of the terrace region R1. That is, the altered film 25m may be formed over the entire film thickness direction of the terrace region R1, and the surface of the terrace region R1 opposite to the substrate 22 may be exposed.
  • the lower layer (the lower electrode 24 and the substrate 22) of the altered film 25m may be deteriorated due to high heat when the altered film 25m is formed, but in the atmosphere in the terrace region R1.
  • the alteration film 25m prevents the moisture from being absorbed, thereby preventing the occurrence of dielectric breakdown and leakage current, thereby improving the withstand voltage.
  • FIG. 10 is a cross-sectional view showing still another configuration of the piezoelectric actuator 21a.
  • the altered film 25m may be formed on the entire surface of the piezoelectric thin film 25 opposite to the substrate 22. That is, in addition to the terrace region R1, also in the drive region R2 sandwiched between the lower electrode 24 and the upper electrode 26, the piezoelectric thin film 25 is formed by laminating the polycrystalline film 25p and the altered film 25m in this order from the substrate 22 side. It may be configured as.
  • the entire surface of the piezoelectric thin film 25 is irradiated with laser light to form the altered film 25m on the entire surface, and then the terrace region R1 is formed.
  • This can be realized by forming the upper electrode 26 as described above. Even with this configuration, the alteration film 25m in the terrace region R1 prevents moisture from being absorbed in the atmosphere, so that dielectric breakdown and generation of leakage current can be prevented, and the voltage resistance can be improved.
  • the piezoelectric thin film 25 is more excellent in piezoelectric characteristics when it is polycrystalline. Therefore, when the altered film 25m is formed in the drive region R2, it is desirable that the altered film 25m is thinner than the polycrystalline film 25p on the substrate side. Specifically, the thickness of the altered film 25m in the drive region R2 is desirably 1/10 or less of the total thickness of the piezoelectric thin film 25, as in the case of forming in the terrace region R1, and is 1/50 or less. Is more desirable. In addition, the thickness of the altered film 25m in the drive region R2 is preferably 5 nm or more, more preferably 10 nm or more, and further preferably 20 nm or more.
  • FIG. 11 is a cross-sectional view of the piezoelectric actuator 21a when the piezoelectric thin film 25 includes the foreign matter Q.
  • an electric field is applied between the upper electrode 26 and the lower electrode 24 in a state where the piezoelectric thin film 25 contains the foreign matter Q, current easily leaks through the foreign matter Q, the interface of the foreign matter Q, or the grain boundary around the foreign matter Q. Therefore, dielectric breakdown is likely to occur.
  • the foreign material Q exists in the piezoelectric thin film 25, since a part of upper electrode 26 protrudes in the location with the foreign material Q, the presence or absence of the foreign material Q can be confirmed by the external appearance inspection of the piezoelectric actuator 21a.
  • the foreign material Q exists in the piezoelectric thin film 25
  • a part inside the outer shape of the upper electrode 26 is irradiated with laser light. Remove by heating with.
  • an electric field is not applied around the foreign material Q.
  • the surface of the piezoelectric thin film 25 in the region exposed by removing a part of the upper electrode 26 (exposed region R3) is heated (locally heated) by laser light irradiation, and a plurality of crystals are integrally altered.
  • the altered film 25m is further formed on the surface.
  • FIG. 12 is a cross-sectional view of the piezoelectric actuator 21a in which the upper electrode 26 around the foreign material Q is removed and the altered film 25m is formed in the exposed region R3 of the piezoelectric thin film 25.
  • the piezoelectric thin film 25 is configured by laminating the polycrystalline film 25p and the altered film 25m in this order from the substrate 22 side.
  • the range (upper limit and lower limit) of the altered film 25 in the exposed region R3 can be considered in the same manner as the thickness range of the altered film 25 in the terrace region R1 and the drive region R2.
  • the exposed region R3 by forming the altered film 25m on the surface of the piezoelectric thin film 25 on the atmosphere side, it is possible to prevent moisture in the atmosphere from being taken into the piezoelectric thin film 25. Thereby, even when a part of the upper electrode 26 is removed due to the presence of the foreign matter Q and the lower piezoelectric thin film 25 is exposed, the dielectric breakdown and leakage current of the piezoelectric thin film 25 in the exposed region R3 due to the moisture are caused. Occurrence can be suppressed.
  • the piezoelectric actuator 21a of FIG. 12 a part of the upper electrode 26 is removed on the inner side of the outer shape, and the altered film 25m has a piezoelectric thin film formed by removing a part of the upper electrode 26. It is further formed in the exposed exposed region R3, and in the exposed region R3, it can be said that the piezoelectric thin film 25 may have the polycrystalline film 25p and the altered film 22m in this order from the substrate 22 side.
  • the example in which the piezoelectric thin film 25 has the terrace region R ⁇ b> 1 has been described. Preventing the current can be applied to a piezoelectric thin film having no terrace region R1, that is, a configuration in which the side surface of the piezoelectric thin film and the side surface of the upper electrode are flush with each other.
  • Example 1 After the lower electrode 24, the piezoelectric thin film 25, and the upper electrode 26 are sequentially formed on the substrate 22 by the method shown in FIG. 7, the altered region 25m is formed by irradiating the terrace region R1 of the piezoelectric thin film 25 with laser light.
  • the piezoelectric actuator 21a having the configuration shown in FIG. 4 was manufactured. At this time, the thickness of the diaphragm 22b made of Si is 5 ⁇ m, the thickness of the lower electrode 24 containing Pt is 0.1 ⁇ m, the thickness of the piezoelectric thin film 25 made of PZT is 5 ⁇ m, and the thickness of the upper electrode containing Au is 0 ⁇ m. 3 ⁇ m.
  • the piezoelectric thin film 25 formed on the lower electrode 24 by sputtering is a polycrystalline film 25p in which columnar crystals extending upward from the lower electrode 24 are gathered (grain size: about several tens of nm to 1 ⁇ m, crystal orientation: ⁇ 100
  • the PZT surface of the terrace region R1 that is not covered with the upper electrode 26 has an amorphous PZT, that is, a region having no grain boundary (modified film 25m). ) was confirmed from SEM images and the like.
  • the thickness of the altered film 25m was 20 nm.
  • the altered film 25m is formed by locally heating the polycrystalline film 25p of PZT (only the surface is heated).
  • the local heating at this time is performed by a YAG laser irradiator (LR-3100SUV) manufactured by HOYA.
  • LR-3100SUV YAG laser irradiator
  • the wavelength of the laser beam was 266 nm
  • the pulse width was 5 nsec
  • the light amount was 0.1 mJ.
  • the melting point of PZT is generally said to be 1300 to 1600 ° C.
  • the PZT surface is surely melted and solidified by local heating, and the grain boundary on the PZT surface is changed. I was able to lose it.
  • the wavelength of laser light that can be used for local heating of PZT is desirably 400 nm or less as described above. Examples of such laser light include the following.
  • YAG laser (a type of solid-state laser with a fundamental wavelength of 1064 nm)
  • YAG third harmonic Wavelength 355 nm (YAG fundamental wave converted to 1/3 wavelength)
  • YAG fourth harmonic wavelength 266 nm (YAG fundamental wave converted to a quarter wavelength)
  • YAG fifth harmonic Wavelength 213 nm (YAG fundamental wave converted to 1/5 wavelength)
  • Excimer laser (a type of gas laser with different wavelengths depending on the medium used)
  • Medium N 2 wavelength 337 nm
  • Medium XeCl wavelength 308 nm
  • Medium KrF wavelength 248 nm
  • Medium KrCl wavelength 222 nm
  • Medium ArF wavelength 193 nm
  • the withstand voltage property of the piezoelectric actuator 21a thus manufactured was examined as follows. That is, a test was performed to check whether or not dielectric breakdown occurred by applying a voltage of 20 V with a rectangular wave with a frequency of 100 kHz for 30 minutes between the upper electrode 26 and the lower electrode 24. When dielectric breakdown did not occur, the test was performed by further increasing the applied voltage by 5 V and increasing it to a maximum of 50 V.
  • the test environment was 23 ° C. and humidity 50% RH.
  • Example 1 the one in which the altered film 25m was not formed was used as the piezoelectric actuator of Comparative Example 1 (see FIG. 6), and the voltage resistance of this piezoelectric actuator was also examined in the same manner as described above.
  • dielectric breakdown did not occur in Example 1 even when the applied voltage was increased to 50V, but dielectric breakdown occurred in Comparative Example 1 when the applied voltage was 35V. Therefore, it can be said that with the configuration in which the altered film 25m is formed in the terrace region R1 as in Example 1, the withstand voltage is improved by 15 V or more compared to the case where the altered film 25m is not formed.
  • the piezoelectric displacement was the same value in Example 1 and Comparative Example 1, and it was confirmed that there was no influence on the piezoelectric displacement due to the formation of the altered film 25m.
  • Example 2 After the completion of the piezoelectric actuator 21a, when it is confirmed by appearance inspection that the foreign matter Q is mixed in the piezoelectric thin film 25, the upper electrode 26 around the foreign matter Q is removed by irradiating laser light, The exposed surface of the PZT was also irradiated with laser light to form an altered film 25m having no PZT grain boundaries (see FIG. 12). By doing in this way, generation
  • the removal of the upper electrode 26 and the formation of the altered film 25m on the PZT surface were performed by irradiating a pulse laser using a YAG laser irradiator (LR-3100SUV) manufactured by HOYA.
  • the wavelength of the laser beam was 266 nm
  • the pulse width was 5 nsec
  • the amount of light was 0.5 mJ.
  • Example 2 As a result of the treatment as described above, in Example 2, it was confirmed that even when the applied voltage was increased to 50 V, dielectric breakdown did not occur and good voltage resistance was obtained.
  • the piezoelectric actuator, the manufacturing method of the piezoelectric actuator, the ink jet head, and the ink jet printer of the present embodiment described above can be expressed as follows, and thereby have the following effects.
  • the piezoelectric actuator of this embodiment is a piezoelectric actuator having a lower electrode, a piezoelectric thin film, and an upper electrode in this order on a substrate.
  • the piezoelectric thin film includes a polycrystalline film including a plurality of crystals and a plurality of crystals.
  • An alteration film in which grain boundaries disappear due to integral alteration, and the alteration film is formed at least in a region protruding from the outer shape of the upper electrode in the piezoelectric thin film on the lower electrode, And in the said area
  • the piezoelectric thin film has a region protruding from the outer shape of the upper electrode on the lower electrode.
  • the side surface (end surface) of the upper electrode is not flush with the side surface (end surface) of the piezoelectric thin film, it is separated from the piezoelectric thin film when an electric field is applied between the upper electrode and the lower electrode. No electric field is applied to the side surface. For this reason, even if moisture in the atmosphere is taken into the inside from the side surface of the piezoelectric thin film, it is possible to suppress the occurrence of side surface leakage due to the moisture.
  • an altered film in which the grain boundaries have disappeared due to integral alteration of a plurality of crystals is formed in at least the above-described region of the piezoelectric thin film, and this altered film is exposed on the surface opposite to the substrate in the above-described region. ing. If the altered film is exposed on the surface, the altered film may be formed in the entire region of the piezoelectric thin film in the region, or may be formed only on the surface side (on the substrate side). It may be a polycrystalline film).
  • the altered film may have an amorphous structure. In this case, since the altered film does not have grain boundaries, the above effect can be obtained with certainty.
  • the piezoelectric thin film may have the polycrystalline film and the altered film in this order from the substrate side.
  • the substrate side of the piezoelectric thin film is not in contact with the atmosphere (because the lower electrode and the substrate are present), and the opposite side of the substrate is in contact with the atmosphere. Therefore, in the above region, even if the entire film thickness direction of the piezoelectric thin film is not formed by the altered film, that is, the substrate side is a polycrystalline film, and the opposite side of the substrate is the altered film, The effects described above can be obtained.
  • the upper electrode is partially removed inside the outer shape, and the altered film is further formed in an exposed region where the piezoelectric thin film is exposed by removing a part of the upper electrode.
  • the piezoelectric thin film may have the polycrystalline film and the altered film in this order from the substrate side.
  • a part of the upper electrode may be removed inside the outer shape of the upper electrode. is there.
  • the polycrystalline film is positioned on the substrate side, and the altered film is positioned on the atmospheric side, so that moisture in the atmosphere is contained inside the piezoelectric thin film. Can be prevented from being taken in. Thereby, it is possible to suppress dielectric breakdown and generation of leakage current in the exposed region of the piezoelectric thin film.
  • the thickness of the altered film is preferably thinner than the thickness of the polycrystalline film formed on the substrate side than the altered film.
  • the altered film is formed by, for example, altering a plurality of crystals integrally (for example, making them amorphous) by irradiation with laser light, for example.
  • the altered film is thickened, there is a concern that the lower layer (lower electrode, substrate) of the polycrystalline film may be deteriorated by high heat during laser light irradiation. Therefore, it is desirable that the altered film be thinner than the polycrystalline film. .
  • the thickness of the altered film is preferably 5 nm or more. If the thickness of the altered film is at least 5 nm, the altered film can reliably function as a film that prevents moisture from entering the atmosphere.
  • the inkjet head includes the above-described piezoelectric actuator and a nozzle substrate having a nozzle hole for ejecting ink accommodated in an opening formed in the substrate of the piezoelectric actuator to the outside.
  • the above-described piezoelectric actuator since the withstand voltage can be improved, it is possible to eject ink by applying a high electric field. As a result, ink discharge using high-viscosity ink becomes possible.
  • the ink jet printer includes the above ink jet head, and ejects ink from the ink jet head toward a recording medium.
  • an inkjet printer advantageous for high-speed and high-definition drawing can be realized.
  • the method for manufacturing a piezoelectric actuator of this embodiment includes a step of forming a lower electrode on a substrate, a step of forming a polycrystalline film including a plurality of crystals on the lower electrode, and forming a piezoelectric thin film, In the piezoelectric thin film, the step of forming the upper electrode on the piezoelectric thin film so as to form a region protruding from the outer shape of the upper electrode, and heating the surface of the region opposite to the substrate to Forming a denatured film having the grain boundaries disappeared on at least the surface of the region by integrally modifying a plurality of crystals contained in the crystal film.
  • the piezoelectric thin film In the piezoelectric thin film, a region protruding from the outer shape of the upper electrode is formed, and the side surface of the upper electrode is separated from the side surface of the piezoelectric thin film, so that no electric field is applied to the side surface of the piezoelectric thin film. For this reason, even if moisture in the atmosphere is taken into the inside from the side surface of the piezoelectric thin film, the occurrence of side leakage due to the moisture can be suppressed.
  • a modified film with the grain boundaries disappearing is formed on the surface of the piezoelectric thin film opposite to the substrate, so that moisture in the atmosphere can be prevented from being taken into the surface from the surface of the piezoelectric thin film. it can. Therefore, it is possible to improve the voltage resistance while suppressing the occurrence of dielectric breakdown and leakage current due to the moisture. That is, it is possible to suppress the dielectric breakdown of the piezoelectric thin film between the end portion of the upper electrode and the lower electrode, and it is possible to suppress the occurrence of a leakage current other than on the side surface of the piezoelectric thin film.
  • the above-described insulator layer inhibits the displacement of the piezoelectric thin film, and the piezoelectric characteristics are deteriorated. Can't happen.
  • the method may further include a step of forming, on the surface, a modified film in which the grain boundaries have disappeared by integrally modifying a plurality of crystals contained in the polycrystalline film.
  • the piezoelectric thin film By applying laser light, the piezoelectric thin film (polycrystalline film) is locally heated, that is, a part of the piezoelectric thin film in the film thickness direction (for example, only the surface) is instantaneously heated to form an altered film. be able to.
  • laser light By applying laser light, the piezoelectric thin film (polycrystalline film) is locally heated, that is, a part of the piezoelectric thin film in the film thickness direction (for example, only the surface) is instantaneously heated to form an altered film. be able to.
  • By such local heating it is possible to prevent excessive heat from being applied to the substrate and the lower electrode, which are constituent members, so that deterioration of these members can be prevented.
  • the wavelength of the laser beam is preferably such that the transmittance when transmitting through the piezoelectric thin film is 50% or less.
  • the piezoelectric actuator of the present invention can be used for an inkjet head and an inkjet printer.
  • Inkjet Printer 21 Inkjet Head 21a Actuator (Piezoelectric Actuator) 22 Substrate 22a Pressure chamber (opening) 24 Lower electrode 25 Piezoelectric thin film 25p Polycrystalline film 25m Altered film 26 Upper electrode 31 Nozzle substrate 31a Discharge hole (nozzle hole) R1 Terrace area R3 Exposed area

Abstract

L'invention concerne un actionneur (21a) piézoélectrique qui comporte une électrode inférieure (24), une pellicule mince (25) piézoélectrique, et une électrode supérieure (26) dans cet ordre sur un substrat (22). La couche mince (25) piézoélectrique comporte : une pellicule polycristalline (25p) contenant une pluralité de types de cristaux ; et une pellicule dégénérée (25m) dans laquelle les limites de grains ont disparu en raison de la dégénérescence intégrale des cristaux. Dans la pellicule mince (25) piézoélectrique sur l'électrode inférieure (24), la pellicule dégénérée (25m) est formée au moins dans une zone en terrasse (R1) qui dépasse de la forme extérieure de l'électrode supérieure (26), ladite pellicule dégénérée étant découverte depuis une surface de zone de terrasse (R1) qui est située du côté opposé du substrat (22).
PCT/JP2015/058710 2014-05-30 2015-03-23 Actionneur piézoélectrique, procédé de fabrication d'un actionneur piézoélectrique, tête de jet d'encre, et imprimante à jet d'encre WO2015182228A1 (fr)

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CN111376596A (zh) * 2018-12-26 2020-07-07 精工爱普生株式会社 液体喷射头、液体喷射装置以及压电器件

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JP2011160391A (ja) * 2010-01-09 2011-08-18 Seiko Epson Corp 圧電振動片、圧電振動片の製造方法、圧電振動子及び発振器
JP2012164922A (ja) * 2011-02-09 2012-08-30 Yuutekku:Kk 圧電体の製造方法、圧電体及び電子装置
JP2013091305A (ja) * 2011-10-27 2013-05-16 Seiko Epson Corp 液体噴射ヘッド、液体噴射装置、及び圧電素子

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JP2007149858A (ja) * 2005-11-25 2007-06-14 Seiko Epson Corp 圧電素子並びに圧電素子を用いた液体噴射ヘッド及び液体噴射装置
JP2011160391A (ja) * 2010-01-09 2011-08-18 Seiko Epson Corp 圧電振動片、圧電振動片の製造方法、圧電振動子及び発振器
JP2012164922A (ja) * 2011-02-09 2012-08-30 Yuutekku:Kk 圧電体の製造方法、圧電体及び電子装置
JP2013091305A (ja) * 2011-10-27 2013-05-16 Seiko Epson Corp 液体噴射ヘッド、液体噴射装置、及び圧電素子

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Publication number Priority date Publication date Assignee Title
CN111376596A (zh) * 2018-12-26 2020-07-07 精工爱普生株式会社 液体喷射头、液体喷射装置以及压电器件
JP2020107624A (ja) * 2018-12-26 2020-07-09 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置および圧電デバイス
JP7346819B2 (ja) 2018-12-26 2023-09-20 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置および圧電デバイス

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