WO2017169470A1 - Tête à jet d'encre et imprimante à jet d'encre - Google Patents

Tête à jet d'encre et imprimante à jet d'encre Download PDF

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Publication number
WO2017169470A1
WO2017169470A1 PCT/JP2017/007899 JP2017007899W WO2017169470A1 WO 2017169470 A1 WO2017169470 A1 WO 2017169470A1 JP 2017007899 W JP2017007899 W JP 2017007899W WO 2017169470 A1 WO2017169470 A1 WO 2017169470A1
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Prior art keywords
piezoelectric body
orientation
piezoelectric
ink
ratio
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PCT/JP2017/007899
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English (en)
Japanese (ja)
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大士 梶田
江口　秀幸
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コニカミノルタ株式会社
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Publication of WO2017169470A1 publication Critical patent/WO2017169470A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

Definitions

  • the present invention relates to an inkjet head that ejects ink in a pressure chamber, and an inkjet printer that includes the inkjet head.
  • a piezoelectric body is used as an electromechanical conversion element in an inkjet head used in an inkjet printer.
  • PZT lead zirconate titanate
  • Patent Document 1 a perovskite-type compound containing bismuth iron manganate and barium titanate is used as the piezoelectric body.
  • Patent Document 3 a composite oxide having a perovskite structure containing bismuth, iron, barium, and titanium is used as the piezoelectric body.
  • KNN potassium sodium niobate
  • JP 2011-205067 A (refer to claim 1, paragraphs [0019] to [0025], etc.)
  • JP 2013-55276 A see claim 1, paragraphs [0017] to [0023], etc.
  • the piezoelectric body having a rectangular shape in plan view contains KNN, it is desired to suppress the generation of cracks in the piezoelectric body and realize a satisfactory piezoelectric displacement.
  • an object of the present invention is to provide an ink jet head capable of suppressing the occurrence of cracks in a piezoelectric body and obtaining good piezoelectric displacement, and an ink jet printer including the ink jet head.
  • An inkjet head is a piezoelectric body, a pressure chamber that stores ink ejected from a nozzle, and a part of a wall that constitutes the pressure chamber, and a pressure generated by displacement of the piezoelectric body.
  • An inkjet head including a diaphragm to be applied to the ink, wherein a longitudinal length a in a plane perpendicular to the thickness direction of the piezoelectric body in a driving region where the piezoelectric body is displaced;
  • the ratio a / b to the length b in the short direction is 2.0 or more and 10.0 or less, and the piezoelectric body contains potassium sodium niobate, and the perovskite obtained by X-ray diffraction in the piezoelectric body
  • the ratio of the peak intensity of (100) orientation to the sum of the peak intensity of (100) orientation, (110) orientation, and (111) orientation of the phase is 50% or more and less than 100%, and the sum is The proportion of which (110) peak intensity of orientation is 50% or less than 0.1%.
  • An inkjet printer includes the above-described inkjet head, and ejects ink from the inkjet head toward a recording medium.
  • the rectangular piezoelectric body in plan view includes KNN that does not contain lead, it is possible to suppress the generation of cracks in the piezoelectric body and realize excellent piezoelectric displacement. can do.
  • FIG. 1 is an explanatory diagram illustrating a schematic configuration of an inkjet printer according to an embodiment of the present invention.
  • FIG. It is sectional drawing of the inkjet head with which the said inkjet printer is provided. It is a top view of the principal part of the said inkjet head. It is sectional drawing which shows the manufacturing process of the said inkjet head. It is a graph which shows an example of the orientation of the piezoelectric material obtained by X-ray diffraction. It is a perspective view which shows the schematic structure of a piezoelectric displacement measuring meter.
  • the numerical value range includes the values of the lower limit A and the upper limit B.
  • FIG. 1 is an explanatory diagram illustrating a schematic configuration of an inkjet printer 1 according to the present embodiment.
  • the inkjet printer 1 forms an image on the recording medium P by ejecting ink from the inkjet head 2 toward the recording medium P.
  • the ink jet printer 1 includes, for example, a so-called line head type ink jet recording apparatus in which ink jet heads 2 are provided in a line shape in the width direction of a recording medium.
  • the ink jet printer 1 includes an ink jet head 2, a feed roll 3, a take-up roll 4, two back rolls 5 and 5, an intermediate tank 6, a liquid feed pump 7, a storage tank 8, and a fixing mechanism. 9 and.
  • the inkjet head 2 ejects ink toward the recording medium P.
  • the inkjet head 2 is disposed at a position facing the recording medium P conveyed from one back roll 5 toward the fixing mechanism 9. Yes.
  • a plurality of inkjet heads 2 may be provided corresponding to inks of different colors (for example, yellow, magenta, cyan, and black).
  • the feeding roll 3, the take-up roll 4 and the back rolls 5 are members each having a cylindrical shape that can rotate around its axis.
  • the feeding roll 3 is a roll that feeds the long recording medium P wound around the circumferential surface toward the position facing the inkjet head 2.
  • the feeding roll 3 is rotated by driving means (not shown) such as a motor, thereby feeding the recording medium P in the X direction in FIG.
  • the take-up roll 4 is taken out from the feed roll 3 and takes up the recording medium P on which the ink is ejected by the inkjet head 2 around the circumferential surface.
  • Each back roll 5 is disposed between the feed roll 3 and the take-up roll 4.
  • One back roll 5 located on the upstream side in the conveyance direction of the recording medium P is placed at a position facing the inkjet head 2 while supporting the recording medium P fed by the feeding roll 3 around a part of the circumferential surface. Transport toward.
  • the other back roll 5 conveys the recording medium P around a part of the peripheral surface while supporting the recording medium P from the position facing the inkjet head 2 toward the take-up roll 4.
  • the intermediate tank 6 temporarily stores the ink supplied from the storage tank 8.
  • the intermediate tank 6 is connected to the ink tube 10 a and adjusts the back pressure of the ink in the inkjet head 2 to supply ink to the inkjet head 2.
  • the liquid feed pump 7 supplies the ink stored in the storage tank 8 to the intermediate tank 6, and is arranged in the middle of the supply pipe 10b.
  • the ink stored in the storage tank 8 is pumped up by the liquid feed pump 7 and supplied to the intermediate tank 6 through the supply pipe 10b.
  • the fixing mechanism 9 fixes the ink ejected to the recording medium P by the inkjet head 2 on the recording medium P.
  • the fixing mechanism 9 includes a heater for heat-fixing the discharged ink on the recording medium P, a UV lamp for curing the ink by irradiating the discharged ink with UV (ultraviolet light), and the like. Yes.
  • the recording medium P fed from the feeding roll 3 is conveyed to the position facing the inkjet head 2 by the back roll 5, and ink is ejected from the inkjet head 2 to the recording medium P. Thereafter, the ink ejected onto the recording medium P is fixed by the fixing mechanism 9, and the recording medium P after ink fixing is taken up by the take-up roll 4.
  • the line head type inkjet printer 1 ink is ejected while the recording medium P is conveyed while the inkjet head 2 is stationary, and an image is formed on the recording medium P.
  • the ink jet printer 1 may be configured to form an image on a recording medium by a serial head method.
  • the serial head method is a method of forming an image by ejecting ink by moving an inkjet head in a direction orthogonal to the transport direction while transporting a recording medium.
  • the ink jet head moves in the width direction of the recording medium while being supported by a structure such as a carriage.
  • a sheet-like one cut in advance into a predetermined size (shape) may be used as the recording medium.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of the inkjet head 2
  • FIG. 3 is a plan view of the main part of the inkjet head 2. Note that the cross-sectional view of FIG. 2 corresponds to a cross-sectional view taken along line AA ′ in FIG.
  • the inkjet head 2 has an inkjet substrate 11 and a piezoelectric element 12.
  • the piezoelectric element 12 is supported by the inkjet substrate 11 and is covered with a housing 13.
  • the piezoelectric substrate 2a is composed of a head substrate 21 (to be described later) of the inkjet substrate 11 and the piezoelectric element 12.
  • the inkjet substrate 11 includes a head substrate 21, an intermediate substrate 22, and a nozzle substrate 23.
  • the head substrate 21 is composed of a semiconductor substrate or an SOI (Silicon on Insulator) substrate made of a single crystal Si (silicon) alone having a thickness of about 100 to 300 ⁇ m, for example.
  • the head substrate 21 is obtained by adjusting a substrate having a thickness of about 750 ⁇ m to a thickness of about 100 to 300 ⁇ m by polishing. The thickness of the head substrate 21 may be appropriately adjusted according to the device to be applied.
  • the SOI substrate is obtained by bonding two Si substrates through an oxide film.
  • a plurality of pressure chambers 21a (only one pressure chamber 21a is shown for convenience in FIG. 2) for storing ink ejected from a nozzle 23a, which will be described later, an individual ink channel 21b, and a common ink A flow path 21c is formed.
  • the common ink flow path 21 c communicates with a common ink flow path 22 b formed on the intermediate substrate 22.
  • the ink in the intermediate tank 6 (see FIG. 1) is supplied to each pressure chamber 21a via the ink tube 10a, the common ink channel 22b, the common ink channel 21c, and the individual ink channel 21b.
  • the ink supplied to each pressure chamber 21a may be a pigment ink or a dye ink.
  • Each pressure chamber 21a is formed in a part of the thickness direction of the head substrate 21, and the intermediate substrate 22 side is open.
  • Each pressure chamber 21a is formed in a rectangular shape in plan view, that is, in a plane perpendicular to the thickness direction of the head substrate 21.
  • the rectangular shape generally refers to a quadrangular shape in which the length in the longitudinal direction and the length in the short direction are different from each other. It is a concept that also includes (shape).
  • each pressure chamber 21a that is, the wall located on the side opposite to the intermediate substrate 22 (piezoelectric element 12 side) with respect to each pressure chamber 21a constitutes a diaphragm 21d that covers the pressure chamber 21a.
  • the vibration plate 21d vibrates (displaces) with the driving (displacement, expansion and contraction) of the piezoelectric body 32 described later, thereby applying pressure to the ink in the pressure chamber 21a, and ejecting the ink from the nozzle 23a to the outside.
  • the diaphragm 21d is a part of a wall (including an upper wall and a side wall) constituting the pressure chamber 21a, and applies a pressure generated by the displacement of the piezoelectric body 32 to the ink in the pressure chamber 21a. .
  • a thermal oxide film 44 (see FIG. 4) is formed on the surface of the diaphragm 21d for the purpose of protecting and insulating the head substrate 21.
  • the thermal oxide film 44 is made of, for example, SiO 2 (silicon oxide) having a thickness of about 0.1 ⁇ m.
  • the intermediate substrate 22 is made of, for example, a glass substrate, and includes a communication hole 22 a that communicates with the pressure chamber 21 a of the head substrate 21, and a common ink channel 22 b that communicates with the common ink channel 21 c of the head substrate 21. ing.
  • the nozzle substrate 23 is made of, for example, a Si substrate, and has the nozzle 23a described above serving as a discharge hole for discharging the ink in the pressure chamber 21a to the outside.
  • the nozzle 23 a communicates with the pressure chamber 21 a through the communication hole 22 a of the intermediate substrate 22.
  • the nozzle 23a is configured with, for example, two-stage holes having different diameters. However, the nozzle 23a may be configured with one-stage holes, or may be configured with two or more stages of multi-stage holes.
  • the above-described inkjet substrate 11 may be provided with a circulation flow path portion for circulating the ink in the pressure chamber 21a between the outside.
  • the piezoelectric element 12 has a lower electrode 31, a piezoelectric body 32, and an upper electrode 33 in this order from the inkjet substrate 11 side. That is, the upper electrode 33 is located on one side in the thickness direction of the piezoelectric body 32 and the lower electrode 31 is located on the other side.
  • the lower electrode 31 is a common electrode provided in common to the plurality of pressure chambers 21a, and is configured by laminating a Ti (titanium) layer and a Pt (platinum) layer.
  • the Ti layer is formed in order to improve the adhesion between the thermal oxide film 44 and the Pt layer.
  • the thickness of the Ti layer is, for example, about 0.02 ⁇ m, and the thickness of the Pt layer is, for example, about 0.1 ⁇ m.
  • the lower electrode 31 is illustrated so as to be positioned only above the pressure chamber 21a, but actually, it is formed over the entire surface of the head substrate 21 (FIG. 3). reference).
  • the lower electrode 31 is connected to the drive circuit 14.
  • the piezoelectric body 32 includes potassium sodium niobate.
  • Sodium potassium niobate is a metal oxide having a perovskite structure containing niobium (Nb), potassium (K), and sodium (Na), and is also referred to as KNN.
  • KNN is represented by (K 1 ⁇ x Na x ) NbO 3, where x is the ratio of the atomic number concentration of Na to the total atomic number concentration of K and Na. Details of the orientation and composition of KNN will be described later.
  • the thickness of the piezoelectric body 32 is not less than 0.5 ⁇ m and not more than 10 ⁇ m, for example, but is not limited to this range.
  • additives such as Ti, tantalum (Ta), barium (Ba), calcium (Ca), and lithium (Li) are added for the purpose of improving piezoelectric characteristics (for example, piezoelectric displacement). May be.
  • the piezoelectric body 32 has a drive region 32a.
  • the drive region 32 a is a region sandwiched between the upper electrode 33 and the lower electrode 31 in the piezoelectric body 32, and is displaced according to the potential difference between the upper electrode 33 and the lower electrode 31.
  • the drive region 32a is formed on the lower electrode 31 and above each pressure chamber 21a, that is, at a position corresponding to the formation region of each pressure chamber 21a. It can also be said that it overlaps with the pressure chamber 21a via 21d.
  • each pressure chamber 21a is formed in a rectangular shape in plan view as described above, the drive region 32a of the piezoelectric body 32 positioned corresponding to each pressure chamber 21a is also formed in a rectangular shape in plan view. ing. More specifically, in the drive region 32a, the ratio a / b between the length a ( ⁇ m) in the longitudinal direction and the length b ( ⁇ m) in the short direction in the plane perpendicular to the thickness direction of the piezoelectric body 32 is 2.0 to 10.0. Thereby, it is possible to realize a high-density arrangement of the nozzles 23a while suppressing the occurrence of cracks due to stress concentration when the piezoelectric body 23 is driven (voltage application).
  • the piezoelectric body 32 (drive region 32a) becomes too thin, and stress tends to concentrate on the central portion in the longitudinal direction of the piezoelectric body 32 during driving, as will be described later. Even if the orientation of the piezoelectric body 32 is adjusted, the piezoelectric body 32 is easily cracked. Conversely, when the ratio a / b is less than 2.0, it is possible to suppress the stress concentration of the piezoelectric body 32 during driving, but the cross-sectional area perpendicular to the thickness direction of the pressure chamber 21a is constant.
  • the length a in the longitudinal direction of the drive region 32a of the piezoelectric body 32 can be, for example, 240 to 1300 ⁇ m, and more preferably 300 to 1000 ⁇ m.
  • the length b in the short direction of the drive region 32a may be 120 to 130 ⁇ m, for example.
  • a part of the piezoelectric body 32 is drawn out on the lower electrode 31 to the outside of the pressure chamber 21a (above the side wall of the pressure chamber 21a). Thereby, a part of the upper electrode 33 formed on the piezoelectric body 32 can be pulled out above the side wall of the pressure chamber 21 a along the surface of the piezoelectric body 32.
  • the upper electrode 33 is an individual electrode provided corresponding to each pressure chamber 21 a and is configured by laminating a Ti layer and a Pt layer on the piezoelectric body 32.
  • the Ti layer is formed in order to improve the adhesion between the piezoelectric body 32 and the Pt layer.
  • the thickness of the Ti layer is, for example, about 0.02 ⁇ m
  • the thickness of the Pt layer is, for example, about 0.1 to 0.2 ⁇ m.
  • a layer made of gold (Au) may be formed instead of the Pt layer.
  • the upper electrode 33 is drawn outside the pressure chamber 21 a (see FIG. 2) via the lead-out portion 34, and is connected to the drive circuit 14 (see FIG. 2) via the lead-out portion 34. It is connected.
  • the piezoelectric body 32 when a potential difference is applied between the lower electrode 31 and the upper electrode 33 by the drive circuit 14, the piezoelectric body 32 has a thickness direction according to the potential difference between the lower electrode 31 and the upper electrode 33. Displaces (stretches) in the direction perpendicular to Then, due to the difference in length between the piezoelectric body 32 and the diaphragm 21d, a curvature is generated in the diaphragm 21d, and the diaphragm 21d is displaced (curved or vibrated) in the thickness direction.
  • the pressure wave is propagated to the ink in the pressure chamber 21a by the vibration of the vibration plate 21d described above.
  • the ink in the pressure chamber 21a is ejected to the outside as ink droplets through the communication hole 22a and the nozzle 23a.
  • the ink in the pressure chamber 21a is ejected from the nozzle 23a by vibrating the vibration plate 21d by the displacement of the piezoelectric body 32 due to voltage application.
  • FIG. 4 is a cross-sectional view showing the manufacturing process of the inkjet head 2.
  • the head substrate 21 is prepared.
  • crystalline silicon (Si) often used in MEMS (Micro Electro Mechanical Systems) can be used.
  • MEMS Micro Electro Mechanical Systems
  • two Si substrates 41 and 42 are bonded via an oxide film 43.
  • the SOI structure having the above structure is used.
  • the head substrate 21 is placed in a heating furnace and held at a temperature of about 1500 ° C. for a predetermined time, and a thermal oxide film 44 made of SiO 2 is formed on the surface of one Si substrate 42 (corresponding to the vibration plate 21d). A thermal oxide film 45 is formed on the surface of the Si substrate 41.
  • the lower electrode 31 is formed by the sputtering method to form the lower electrode 31.
  • the lower electrode 31 is not patterned here, the lower electrode 31 may be patterned into a desired shape.
  • the head substrate 21 is reheated to about 600 ° C., and a KNN layer 32b is formed by sputtering.
  • a photosensitive resin 51 is applied onto the KNN layer 32b by a spin coating method, and unnecessary portions of the photosensitive resin 51 are removed by exposure and etching through a mask. Transfer the shape. Thereafter, using the photosensitive resin 51 as a mask, the shape of the layer 32 b is processed using a reactive ion etching method to obtain a piezoelectric body 32.
  • Ti and Pt layers are sequentially formed on the lower electrode 31 by a sputtering method so as to cover the piezoelectric body 32, thereby forming a layer 33a.
  • a photosensitive resin 52 is applied onto the layer 33a by a spin coating method, and unnecessary portions of the photosensitive resin 52 are removed by exposure and etching through a mask, and the shape of the upper electrode 33 to be formed is transferred. To do.
  • the shape of the layer 33a is processed using a reactive ion etching method to form the upper electrode 33.
  • a photosensitive resin 53 is applied to the back surface (thermal oxide film 45 side) of the head substrate 21 by spin coating, and unnecessary portions of the photosensitive resin 53 are removed by exposure and etching through a mask.
  • the shape of the pressure chamber 21a, the individual ink flow path 21b, and the common ink flow path 21c (see FIG. 2) to be formed is transferred.
  • the head substrate 21 is removed by the reactive ion etching method using the photosensitive resin 53 as a mask to form the pressure chamber 21a, the individual ink channel 21b, and the common ink channel 21c, and then the thermal oxide film 45 is removed. Thereby, the piezoelectric actuator 2a is obtained.
  • a diaphragm 21d serving as an upper wall of the pressure chamber 21a is formed.
  • the head substrate 21 and the intermediate substrate 22 are joined by, for example, anodic bonding so that the pressure chamber 21a of the head substrate 21, the communication hole 22a of the intermediate substrate 22 and the nozzle 23a of the nozzle substrate 23 communicate with each other.
  • the inkjet head 2 is completed by joining the intermediate substrate 22 and the nozzle substrate 23 by, for example, anodic bonding.
  • the head substrate 21, the intermediate substrate 22, and the nozzle substrate 23 may be joined with an adhesive.
  • the orientation of the piezoelectric body 32 is set as follows. Peak intensity of the (100) orientation of the perovskite phase obtained when X-ray diffraction (XRD) 2 ⁇ / ⁇ measurement is performed by irradiating the piezoelectric body 32 containing KNN with X-rays. Is I (100) , the peak intensity of the (110) orientation of the perovskite phase is I (110), and the peak intensity of the (111) orientation of the perovskite phase is I (111) . The sum of I (100) , I (110) and I (111) is Io.
  • Io I (100) + I (110) + I (111) .
  • the ratio of I (100) to Io is 50% or more and less than 100%, and the ratio of I (110) to Io is 0.1% or more and 50% or less.
  • I (100) , I (110) , and I (111) are measured such that I (100) is 10,000 or more in terms of the count rate (cps) of X-rays per second. This is the value when
  • the ratio of I (100) to Io is also referred to as (100) orientation degree
  • the ratio of I (110) to Io is also referred to as (110) orientation degree
  • an orientation having an orientation degree of 50% or more is also referred to as a main orientation.
  • KNN Since the piezoelectric body 32 containing KNN has a (100) orientation degree of 50% or more and a (100) main orientation, a good piezoelectric displacement can be obtained.
  • KNN has a (110) orientation degree of 0.1% or more and 50% or less, and has a (110) orientation although it is a (100) main orientation as described above. Even in the case of a rectangular shape in which cracks are likely to occur, the occurrence of cracks can be suppressed. This is presumably because the internal stress due to the (100) orientation of KNN is diffused by the internal stress due to the (110) orientation, and the generation of cracks due to the internal stress of the (100) orientation is suppressed.
  • the ratio of I (110) to Io that is, the (110) orientation degree of KNN is preferably 0.1% or more and 20% or less.
  • the degree of (100) orientation of KNN is 80% or more, and the orientation is increased in the direction of the polarization axis of the piezoelectric body 32, so that even better piezoelectric displacement can be realized.
  • the internal stress due to the (100) orientation can be diffused with the minimum necessary internal stress due to the (110) orientation, and the internal stress due to the (110) orientation can be suppressed as much as possible. Thereby, it can suppress that a crack arises in a piezoelectric material by the internal stress of (110) orientation.
  • the piezoelectric body 32 is composed of a piezoelectric thin film having a thickness of 0.5 ⁇ m or more and 10 ⁇ m or less
  • the piezoelectric body 32 is cracked into a rectangular piezoelectric body 32 (particularly the central portion in the longitudinal direction) due to stress concentration when the piezoelectric body 32 is driven. As described above, this is likely to occur. Therefore, the configuration in which the orientation of the piezoelectric body 32 is set as described above to suppress the occurrence of cracks is very effective when the piezoelectric body 32 is a piezoelectric thin film having the above thickness.
  • the ratio of the atomic number concentration of Na to the total atomic number concentration of K and Na is x, 0.45 ⁇ x ⁇ 0.85 It is desirable that When x is in the above range, K and Na are contained in the piezoelectric body 32 (KNN) at an appropriate atomic number concentration ratio, so that excellent piezoelectric displacement can be realized. In particular, when 0.55 ⁇ x ⁇ 0.75, the balance of the content of K and Na is further improved, so that a further excellent piezoelectric displacement can be expected.
  • Example ⁇ a specific example of the piezoelectric body 32 used in the inkjet head 2 of the present embodiment will be described as an example. Moreover, a comparative example is also demonstrated for the comparison with an Example.
  • Example 1 First, a thermal oxide film of about 100 nm was formed on a substrate made of a single crystal Si wafer having a diameter of 4 inches and a thickness of about 400 ⁇ m. Standard values such as a wafer thickness of 300 ⁇ m to 725 ⁇ m and a diameter of 3 inches to 8 inches may be used.
  • the thermal oxide film can be formed by exposing the Si wafer to a high temperature of about 1200 ° C. in an oxygen atmosphere using a wet oxidation furnace.
  • Ti was deposited as an adhesion layer to a thickness of 20 nm and Pt to a thickness of 100 nm by sputtering to form a lower electrode.
  • the Pt layer was formed with the Si substrate heated at 400 ° C. After the formation of the Pt layer, the crystallinity of Pt was measured by XRD, and it was confirmed that Pt had a (111) orientation.
  • a KNN thin film having a thickness of about 3 ⁇ m was formed as a piezoelectric body on the lower electrode by a high-frequency magnetron sputtering method.
  • the sputtering conditions of KNN at this time were O 2 / Ar mixture ratio: 0.005, chamber internal pressure: 1.3 Pa, RF power applied to the target: about 700 W, and substrate temperature: about 500 ° C.
  • a sputtering target having a K / Na / Nb ratio of 35/65/100 was used.
  • the K / Na / Nb ratio is 35/65/100, which is the same as the target. It was found that a film having the composition was obtained.
  • a substrate 60 with a piezoelectric element (FIG. 6) was completed. Then, the substrate 60 was cut out in a strip shape from the wafer, and the piezoelectric displacement was determined by a cantilever method using a piezoelectric displacement meter shown in FIG.
  • the end of the substrate 60 is clamped with a fixed portion 61 so that the movable length of the cantilever is 10 mm, and a cantilever structure is formed.
  • a maximum voltage of 0 V was applied to the electrode and a minimum voltage of ⁇ 20 V was applied to the lower electrode at a frequency of 500 Hz, and the displacement of the edge of the substrate 60 was observed with a laser Doppler vibrometer 63.
  • ten substrates 60 were produced by the above-described manufacturing method, the displacement of the end portion of each substrate 60 was measured, and the average value thereof was defined as the value of piezoelectric displacement (evaluation target).
  • the quality of the obtained piezoelectric displacement was evaluated based on the following evaluation criteria.
  • ⁇ The piezoelectric displacement is not less than 400 nm and less than 500 nm.
  • Examples 2 to 9, Comparative Examples 1 to 6 In the KNN thin film, the film was formed so that the ratio a / b, (100) peak intensity (degree of orientation), (110) peak intensity (degree of orientation), film thickness, and Na ratio x would be the values shown in Table 1. Except for changing the conditions and forming a KNN thin film, the devices of Examples 2 to 9 and Comparative Examples 1 to 6 were prepared in the same manner as in Example 1, and piezoelectric elements were evaluated using the same evaluation method as in Example 1. Displacement and cracks were evaluated.
  • Table 1 shows parameters in Examples 1 to 9 and Comparative Examples 1 to 6, and evaluation results of piezoelectric displacement and cracks.
  • Comparative Example 4 Even in Comparative Example 4, the effect of suppressing cracks is not obtained.
  • the degree of (110) orientation of KNN is less than 0.1%, and the internal stress caused by the (100) orientation can be sufficiently diffused by the internal stress caused by the (110) orientation. As a result, it is considered that the KNN thin film was cracked by the internal stress due to the (100) orientation.
  • KNN has a (100) orientation degree of 100% and does not have a (110) orientation. Therefore, the internal stress due to the (100) orientation is the internal stress due to the (110) orientation. It is considered that cracks are generated as a result.
  • the length ratio a / b in the KNN thin film is 2.0 or more and 10.0 or less, and the (100) orientation degree of KNN is 50% or more and less than 100%.
  • (110) degree of orientation is 0.1% or more and 50% or less.
  • Example 10 to 12 Next, the elements of Examples 10 to 12 were fabricated in the same manner as in Example 1 except that the KNN thin film was formed so that the film thickness was as shown in Table 2. The evaluation method evaluated piezoelectric displacement and cracks.
  • Table 2 shows parameters in Examples 10 to 12, and evaluation results of piezoelectric displacement and cracks.
  • the evaluation of cracks is the same, but it is considered that the thinner the KNN thin film, the easier it is to crack.
  • Comparative Example 6 it can be seen that cracks occur because the film does not have (110) orientation and is formed as thin as 3.0 ⁇ m. From this, it can be said that, in the case of the thin film thickness configuration as in Example 11 and Example 12, the configuration in which cracks are suppressed by mixing the (100) orientation with the (100) orientation is very effective.
  • Example 13 to 16 Next, the piezoelectric films of Examples 13 to 16 were formed in the same manner as in Example 4 except that the KNN thin film was formed by changing the film formation conditions so that the Na ratio x was a value shown in Table 3. A substrate with an element was produced. Then, 10 substrates of each of Examples 13 to 16 were produced, and piezoelectric displacement and cracks were evaluated by the same evaluation method as in Example 1.
  • Table 3 shows parameters in Examples 13 to 16, and evaluation results of piezoelectric displacement and cracks.
  • the ink jet head of the present embodiment is a piezoelectric body, a pressure chamber for storing ink ejected from nozzles, and a part of a wall constituting the pressure chamber, and pressure generated by displacement of the piezoelectric body is applied to the ink.
  • An ink jet head having a diaphragm to be applied to the piezoelectric head, wherein a longitudinal length a and a short direction in a plane perpendicular to the thickness direction of the piezoelectric body in a driving region where the piezoelectric body is displaced
  • the ratio a / b with respect to the length b is 2.0 or more and 10.0 or less
  • the piezoelectric body contains potassium sodium niobate
  • the piezoelectric body has a perovskite phase obtained by X-ray diffraction
  • the ratio of the peak intensity of (100) orientation to the sum of peak intensity of (100) orientation, (110) orientation, and (111) orientation is 50% or more and less than 100%
  • ( 10) the ratio of the peak intensity of orientation is 50% or less than 0.1%.
  • the piezoelectric body includes potassium sodium niobate (KNN).
  • KNN potassium sodium niobate
  • the piezoelectric body (drive region) can be viewed in a plane (in a plane perpendicular to the thickness direction). In) it is formed in a rectangular shape. Since the piezoelectric body has a peak intensity ratio of (100) orientation by X-ray diffraction of 50% or more and (100) main orientation, a good piezoelectric displacement can be obtained.
  • the piezoelectric body since the ratio of the peak intensity of the (110) orientation is 0.1% or more and 50% or less and includes the (110) orientation, the piezoelectric body has a rectangular shape due to internal stress caused by the (100) orientation. It can suppress that a crack arises in a piezoelectric material. The reason is presumed that the internal stress caused by the (100) orientation is diffused by the internal stress caused by the (110) orientation.
  • the inkjet head further includes an upper electrode and a lower electrode on one side and the other side of the piezoelectric body, and the driving region is sandwiched between the upper electrode and the lower electrode in the piezoelectric body. It may be a region. In this case, by applying a potential difference between the upper electrode and the lower electrode, the piezoelectric body can be reliably displaced (expanded) in the drive region.
  • the thickness of the piezoelectric body may be not less than 0.5 ⁇ m and not more than 10 ⁇ m.
  • the piezoelectric body becomes a thin film (piezoelectric thin film) having a thickness of 0.5 ⁇ m or more and 10 ⁇ m or less, cracks are more likely to occur in the rectangular piezoelectric body due to stress concentration when the piezoelectric body is driven. For this reason, the configuration in which the orientation of the piezoelectric body is set as described above is very effective in order to suppress the occurrence of cracks in the piezoelectric body.
  • the ratio of the atomic number concentration of sodium to the total atomic concentration of potassium and sodium is x, 0.45 ⁇ x ⁇ 0.85 It is desirable that When x is within the above range, potassium and sodium are contained in the piezoelectric body at an appropriate atomic number concentration ratio, so that excellent piezoelectric displacement can be realized. In particular, when 0.55 ⁇ x ⁇ 0.75, the balance of the content of potassium and sodium is further improved, so that a further excellent piezoelectric displacement can be expected.
  • the ratio of the peak intensity of the (110) orientation to the sum is 0.1% or more and 20% or less.
  • the degree of (100) orientation of the piezoelectric body can be increased to 80% or more, a further excellent piezoelectric displacement can be realized.
  • An inkjet printer includes the above-described inkjet head, and ejects ink from the inkjet head toward a recording medium. According to the configuration of the ink jet head described above, the occurrence of cracks in the piezoelectric body can be suppressed, and good piezoelectric displacement can be obtained. Therefore, it is possible to realize an ink jet printer with good ink ejection characteristics and high reliability. .
  • the ink jet head of the present invention can be used for an ink jet printer.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)

Abstract

Dans la présente invention, dans une région d'entraînement dans laquelle un corps piézoélectrique d'une tête à jet d'encre est déplacé, le rapport a/b entre la longueur a dans la direction longitudinale et la longueur b dans la direction transversale dans un plan qui est perpendiculaire à la direction d'épaisseur du corps piézoélectrique est de 2,0-10,0. Le corps piézoélectrique contient du niobate de potassium-sodium. Dans le corps piézoélectrique, le rapport de l'intensité de crête dans l'orientation (100) par rapport à la somme des intensités de crête dans l'orientation (100), l'orientation (110) et l'orientation (111) d'une phase pérovskite, telle que déterminée par diffraction de rayons X, n'est pas inférieur à 50 % et inférieur à 100 %, et le rapport de l'intensité de crête dans l'orientation (110) par rapport à cette somme d'intensités de crête est de 0,1-50 %.
PCT/JP2017/007899 2016-03-29 2017-02-28 Tête à jet d'encre et imprimante à jet d'encre WO2017169470A1 (fr)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012139919A (ja) * 2010-12-28 2012-07-26 Seiko Epson Corp 液体噴射ヘッドの製造方法、液体噴射装置、及び圧電素子の製造方法
JP2013197553A (ja) * 2012-03-22 2013-09-30 Hitachi Cable Ltd 圧電体膜付き基板、圧電体膜素子及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012139919A (ja) * 2010-12-28 2012-07-26 Seiko Epson Corp 液体噴射ヘッドの製造方法、液体噴射装置、及び圧電素子の製造方法
JP2013197553A (ja) * 2012-03-22 2013-09-30 Hitachi Cable Ltd 圧電体膜付き基板、圧電体膜素子及びその製造方法

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