WO2015167114A1

WO2015167114A1 - Thin film deposition device

Info

Publication number: WO2015167114A1
Application number: PCT/KR2015/001179
Authority: WO
Inventors: 황상수; 이우진; 하주일; 신기조; 이돈희
Original assignee: 주식회사 테스
Priority date: 2014-05-02
Filing date: 2015-02-05
Publication date: 2015-11-05
Also published as: TWI561673B; KR101533610B1; CN105018901A; CN204714899U; TW201542869A; CN105018901B

Abstract

The present invention relates to a thin film deposition device, and the thin film deposition device according to the present invention comprises: a gas supply unit for supplying a plurality of process gases, including a raw material gas and a reaction gas, and a purge gas, the gas supply unit having at least one gas supply module for discharging the remaining process gases or the purge gas; and a substrate support unit for supporting a substrate, the substrate support unit being configured to be able to move with regard to the gas supply unit, the thin film deposition device being characterized in that the substrate support unit performs at least one loop movement including a plurality of times of stepwise forward movements and stepwise backward movements, and the loop movement distance between the initial position of the substrate and the final position thereof, when performing the one loop movement, is equal to or larger than the distance of the one gas supply module.

Description

Thin film deposition apparatus

The present invention relates to a thin film deposition apparatus, and more particularly, the installation area and volume are minimized by the step movement of the substrate support when the gas supply unit supplying a plurality of process gases and the substrate support unit supporting the substrate are moved relative to each other. And further relates to a thin film deposition apparatus that can maintain the quality of the thin film.

As a deposition method for forming a thin film on a substrate such as a semiconductor wafer (hereinafter referred to as a substrate), techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) are used. .

8 is a schematic view showing the basic concept of the atomic layer deposition method in the thin film deposition method. Referring to the basic concept of atomic layer deposition with reference to Figure 8, the atomic layer deposition method injects a raw material gas containing a raw material such as trimethyl aluminum (TMA) on a substrate, and then inert purge such as argon (Ar) A single molecular layer is adsorbed onto the substrate through gas injection and unreacted material exhaust, followed by the injection of a reactant gas containing reactants such as ozone (O3) reacting with the raw material followed by inert purge gas injection and unreacted material / byproduct exhaust Through the formation of a single atomic layer (Al-O) on the substrate.

Conventional thin film deposition apparatus used in the atomic layer deposition method has a variety of types depending on the direction and method of injecting various gases, such as source gas, reaction gas, purge gas, etc., furthermore, the gas supply unit for supplying the gas and It may be classified according to relative movement of the substrate.

FIG. 9 shows a conventional thin film deposition apparatus 10 in a so-called 'scan' manner in which a substrate support for supporting a substrate moves relative to a gas supply.

The substrate 12 is supported by the substrate support 14 moving linearly by a predetermined distance, and a gas supply unit 20 for sequentially supplying a plurality of process gases is provided on the substrate support 14.

However, in the thin film deposition apparatus 10 as described above, when the substrate 12 moves below the gas supply unit 20, the substrate 12 moves so as not to overlap with the gas supply unit 20. . That is, the substrate 12 is moved below the gas supply part 20 to move past the gas supply part 20 so as not to overlap with the gas supply part 20. Accordingly, as shown in FIG. 9, so-called 'spare spaces S1 and S2' are required on both sides of the gas supply part 20 so that the substrate 12 does not overlap with the gas supply part 20, respectively. .

This preliminary space acts as a factor to increase the total volume of the thin film deposition apparatus by increasing the internal volume of the thin film deposition apparatus, and as the internal volume increases, the amount of process gas required for actually depositing a thin film increases as well. It contributed to the increase.

In order to solve the above problems, when the thin film is deposited according to the relative movement of the substrate and the gas supply unit, the thin film deposition can reduce the installation area by minimizing the internal volume by the relative movement of the substrate and the gas supply unit. It is an object to provide a device.

In addition, an object of the present invention is to provide a thin film deposition apparatus that can improve the quality of the thin film by the relative movement of the substrate and the gas supply unit.

In addition, an object of the present invention is to provide a thin film deposition apparatus capable of preventing foreign matter from penetrating the thin film by repeating the relative movement of the substrate and the gas supply unit step by step.

An object of the present invention as described above is a gas supply unit for supplying a plurality of process gases and purge gas including the source gas and the reaction gas, and at least one gas supply module for exhausting the remaining process gas or the purge gas And a substrate support part supporting a substrate and movably provided with respect to the gas supply part, wherein the substrate support part performs at least one loop movement including a plurality of stepwise forward and stepwise backward movements, and performs one loop movement. In this case, the loop moving distance between the first position and the last position of the substrate is achieved by the thin film deposition apparatus, characterized in that the distance of the one gas supply module or more.

Here, the step-by-step backward distance at which the substrate support makes the step backward is determined to be smaller than the step-by-step advance distance at which the substrate support moves forward step by step.

Further, the step-up forward distance is 0.1 mm to 15mm, the step-up backward distance is determined to be smaller than the step-up forward distance.

On the other hand, when performing the loop movement n times (n≥2), the substrate is linearly moved from the last position of the (m-1) (2≤m≤n) loop movement to the initial position of the mth loop movement. Can be. At this time, the initial position of the m-th loop movement is the same as the initial position of the (m-1) loop movement, or the initial position of the m-th loop movement is the initial position of the (m-1) loop movement. It can be moved by shift distance compared to. In this case, the shift distance may be different from the step-by-step advance distance.

On the other hand, when the loop movement is performed n times (n≥2), a plurality of times from the last position of the (m-1) (2≤m≤n) loop movement of the substrate to the initial position of the mth loop movement This can be done by moving step by step, including step forward and step backward. At this time, the initial position of the m-th loop movement is the same as the initial position of the (m-1) loop movement, or the initial position of the m-th loop movement is the initial position of the (m-1) loop movement. It can be moved by shift distance compared to. In this case, the shift distance may be different from the step-by-step advance distance.

In addition, the gas supply unit including the at least one gas supply module may have a length greater than or equal to the diameter of the substrate.

According to the present invention having the configuration described above, when the thin film is deposited according to the relative movement of the substrate and the gas supplier, the loop movement distance of the substrate is changed by one relative movement of the substrate and the gas supplier. The internal volume of the thin film deposition apparatus may be minimized by minimizing the distance of the gas supply module or more. Accordingly, the installation area of the thin film deposition apparatus can be significantly reduced, and the cost can be reduced by reducing the amount of process gas required when the thin film is deposited on the substrate according to the decrease of the internal volume.

In addition, according to the present invention, when the loop movement including the relative movement of the plurality of stages of the substrate and the gas supply unit is repeated, the initial position of the loop movement may be shifted to prevent foreign matter from penetrating along the thin film layer. .

1 is a schematic diagram showing one gas supply module for sequentially supplying a plurality of process gases;

2 is a schematic view showing a gas supply unit having a plurality of gas supply modules of FIG. 1;

3 is a schematic diagram illustrating a process of advancing the substrate by step movement according to one embodiment;

4 is a schematic diagram illustrating a process of reversing the substrate by moving step by step;

5 is a conceptual diagram illustrating a thin film layer formed through the process according to FIG. 3;

6 is a schematic diagram illustrating a process of advancing the substrate by step movement according to another embodiment;

7 is a conceptual diagram illustrating a thin film layer formed through the process according to FIG. 6;

8 is a schematic diagram showing the basic concept of the atomic layer deposition method,

9 is a schematic view showing the structure of a conventional thin film deposition apparatus.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the present invention to those skilled in the art. Like numbers refer to like elements throughout.

1 illustrates at least one gas supply module 120 provided in the gas supply unit 1200 (see FIG. 2) of the thin film deposition apparatus according to the present invention.

Referring to FIG. 1, the single gas supply module 120 supplies a plurality of process gases and purge gas including a source gas (first process gas) and a reaction gas (second process gas), and the remaining processes And exhaust the gas or purge gas.

Specifically, the gas supply module 120 includes a first gas supply port 124 for supplying source gas, a second gas supply port 128 for supplying reaction gas, and a purge gas supply port 122 for supplying purge gas. 126). The purge

gas supply holes

122 and 126 may be provided in plural numbers so as to be between the first gas supply port 124 and the second gas supply port 128 or between the first gas supply port 124 and the second gas. It may be provided on at least one side of the supply port (128). In addition, the gas supply module 120 is an exhaust gas outlet 150 provided between the first gas supply port 124, the second gas supply port 128, and the purge

gas supply ports

122 and 126, respectively. ) May be provided. The exhaust gas outlet 150 is connected by a pumping unit (not shown) to exhaust the remaining process gas or purge gas to the outside. One gas supply module 120 having the above configuration has a distance of 'D' as shown in FIG. 1. Accordingly, when the gas supply module 120 and the substrate move relative to each other, a purge gas, a source gas, and a reaction gas are sequentially supplied toward the substrate to form a thin film on the substrate by atomic layer deposition.

2 illustrates a gas supply unit 1200 and a substrate 12 having at least one or more

gas supply modules

120A, 120B, 120C, and 120D described above. Although not shown in FIG. 2, the substrate 12 may be supported by a substrate support part provided to be relatively movable with the gas supply part 1200. Hereinafter, it will be described that the gas supply part 1200 is fixed, and the substrate support part at the lower side moves so that the substrate 12 is movable with respect to the gas supply part 1200.

Referring to FIG. 2, the gas supply unit 1200 may include at least one gas supply module described above. Although FIG. 2 illustrates a gas supply unit 1200 having four

gas supply modules

120A, 120B, 120C, and 120D, this is only an example, and the number of gas supply modules provided in one gas supply unit 1200 is It can be adjusted appropriately.

However, in the present invention, for example, the gas supply unit 1200 may be fixed and the substrate 12 may be provided to be movable with respect to the gas supply unit 1200. In this case, a thin film is deposited on the substrate 12, and in order to minimize the moving distance of the substrate 12, the length of the gas supply unit 1200 including the at least one gas supply module is the length of the substrate ( 12) may be determined to be larger than the diameter (Ds). That is, when the substrate 12 moves, the length of the gas supply unit 1200 is determined to be equal to or larger than the diameter of the substrate 12 so that the substrate 12 does not protrude to both sides of the gas supply unit 1200. Done. This eliminates the need for a preliminary space on both sides of the gas supply unit as in the conventional apparatus, thereby making it possible to achieve a slimmer thin film deposition apparatus and to minimize the internal volume.

Meanwhile, in the present invention, the substrate 12 may perform at least one loop movement including a plurality of stepwise forward and stepwise backward movements. 3 is a schematic diagram illustrating a process in which the substrate 12 performs one loop movement.

Referring to FIG. 3, a thin film may be formed on the substrate 12 by the loop movement, and the number of loop movements may be determined according to the thickness of the thin film formed on the substrate 12. In this case, when the loop is moved, the loop moving distance L between the initial position and the last position of the substrate 12 may be determined to be equal to or greater than the distance of the one gas supply module 120.

When the substrate 12 finishes one loop movement, the distance between the initial position (position t0) and the last position (position t17) of the substrate 12 at the start of the loop movement, that is, the loop movement distance L may be determined to be greater than or equal to the distance D of one gas supply module 120A provided in the gas supply unit 1200. If the loop movement distance L is determined to be smaller than the distance D of one gas supply module 1200 provided in the gas supply unit 1200, even when one loop movement is completed, raw material gas or At least one of the reaction gases may not be supplied. This may generate an area in which the thin film is not formed on the substrate 12. Therefore, the loop movement distance L may be determined to be equal to or greater than a distance D of one gas supply module 1200 provided in the gas supply unit 1200 so that a region in which the thin film is not formed on the substrate 12 does not occur. Can be.

Referring to FIG. 3, the substrate 12 repeatedly moves forward and backward step by step a plurality of times. Here, the 'forward' may be defined as the direction in which the substrate 12 is to move relative to the gas supply unit 1200, the 'reverse' may be defined as the opposite direction to the forward direction. In FIG. 3, since the substrate 12 is intended to move to the right side of the drawing, the right direction in FIG. 3 is determined as the forward direction, and the reverse direction is determined as the reverse direction. The forward and backward directions are determined according to the direction in which the substrate is to be moved and thus are not fixed and defined in any one direction.

The substrate 12 is positioned at the initial position at the start of one loop movement (t0), and then repeats one step forward and one step backward to finish one loop move. In this case, since the substrate eventually moves forward in the desired direction by moving forward, the stepwise backward distance Lb at which the substrate support is reversed step by step is the stepwise forward distance Lf at which the substrate support is forwarded step by step. Determined smaller.

At the initial position, the substrate 12 advances first step by step forward distance Lf (t1), and then reverses first step by step backward distance Lb (t2).

Subsequently, the step forward and the step backward are repeated a plurality of times until the substrate 12 moves from the initial position by a distance corresponding to the loop movement distance L. FIG. In this case, the step forward distance may be, for example, about 0.1 mm to 15 mm, and the step backward distance may be determined to be smaller than the step forward distance. For example, the step backward distance may be determined to be approximately half of the step forward distance. On the other hand, according to the experiments of the present inventors, when the stepping distance is determined to be larger than 15mm, streaks are formed in the thin film deposited on the substrate 12, the quality of the thin film was found to decrease, while the stepping distance is 0.1mm When it is determined to be smaller, it has been found that when a plurality of layers are deposited on the substrate 12, foreign matters outside the thin film may easily penetrate due to the 'tunneling' effect of the upper and lower layers. The 'tunneling' phenomenon will be described in detail later. Therefore, in the present embodiment, the stepwise advance distance may be determined, for example, about 0.1 mm to 15 mm.

On the other hand, according to the thickness of the thin film to be deposited on the substrate 12, the step advancement distance (Lf) of the substrate support, the number of advancement of the step and the number of loop movement can be determined. Therefore, when the thickness of the thin film to be deposited on the substrate 12 is determined, the stepwise advance distance Lf of the substrate, the number of steps forward and the number of loop movements may be appropriately determined.

On the other hand, in the case where the loop movement is performed a plurality of times, that is, the loop movement is performed n times (n≥2, n is an integer), (m-1) (2≤m≤n, m are integers) which are continuously performed. Looking at the movement of the substrate in the loop movement and the m-th loop movement as follows. That is, in the case where the loop movement is performed n times, the integer 'm' is used to define an individual m-th loop movement among the plurality of loop movements.

In the present embodiment, the substrate may move in a linear motion when moving from the last position of the (m-1) th loop movement to the initial position of the mth loop movement.

For example, suppose that 'n' has a value of '2', that is, the loop is repeated twice. In this case, ‘m’ will have a value of 2. When the 'm' has a value of '2', the (m-1) loop movement corresponds to the first loop movement, that is, the first loop movement, and the m loop movement corresponds to the second loop movement. Corresponds to the loop movement performed continuously in the (m-1) th loop movement. Further, assuming that the loop movement illustrated in FIG. 3 is the first loop movement, the last position of the substrate 12 in the first loop movement corresponds to the position of 't17'. In this case, the substrate 12 may move to the initial position P1 of the second loop movement for the subsequent second loop movement. As such, when the substrate moves from the last position of the first loop movement to the first position of the second loop movement, the substrate may move through linear movement as shown in FIG. 3. This is to quickly move the substrate to the initial position of the second loop movement to quickly perform the subsequent loop movement.

However, when the substrate is moved to the initial position of the m-th loop movement which is continued from the last position of the (m-1) loop movement as described above, the substrate may be moved through a plurality of step movements including step forward and step backward. have. This is to perform more efficient thin film deposition by depositing a thin film on the substrate even when the substrate is moved for continuous loop movement. Therefore, when the loop movement is performed n times (n ≧ 2), the substrate is subjected to a plurality of times from the last position of the (m-1) (2 ≦ m ≦ n) loop movement to the initial position of the mth loop movement. You can move through stepping movements, including stepping forward and stepping backward.

For example, FIG. 4 shows a schematic diagram for moving through a step movement including a plurality of step forward and step backwards when the substrate is moved from the last position of the first loop movement to the first position of the second loop movement. do. Since the description of the drawings of FIG. 4 is similar to the description of FIG. 3 described above, repeated description thereof will be omitted. In FIG. 4, the left side is defined as the forward direction and the opposite direction is defined as the backward direction.

3 and 4, the case where the initial position of the m-th loop movement is the same as the initial position of the (m-1) loop movement will be described. That is, the initial position of the first loop movement and the initial position of the second loop movement are determined to be the same. In this case, the thin film deposited on the substrate 12 may have a shape as shown in FIG. 5. 5 is a schematic view in side cross-sectional view showing a thin film formed on the substrate 12.

Referring to FIG. 5, for example, when two loop movements are performed, a first layer 130 and a second layer 140 are formed on the substrate 12 as illustrated in FIG. 5. Since the thin film layer is formed on the substrate according to the stepwise movement of the substrate, the thin film formed on the substrate is deposited step by step parallel to the surface of the substrate as shown in FIG.

At this time, since the first positions of the first loop movement and the second loop movement are the same, the intermediate sidewalls 132 and the second layer 140 of the first layer 130 deposited on the substrate 12 are stepped. Stepwise intermediate sidewalls 142 are formed approximately in a straight line. In this case, the foreign material 110 is formed by the so-called 'tunneling' phenomenon in which the thin film is formed along the intermediate side wall 132 of the first layer 130 and the intermediate side wall 142 of the second layer 140. It can invade inside. This leads to the deterioration of the quality of the thin film, and thus looks at another embodiment to solve the above problems.

6 is a schematic diagram illustrating loop movement of a substrate according to another exemplary embodiment. Compared to the loop movement of FIG. 3 described above, the loop movement according to the present embodiment has a difference in that the initial position of the m-th loop movement is shifted by a shift distance relative to the initial position of the (m-1) loop movement. have. Hereinafter, the difference will be described.

Referring to FIG. 6, for example, when the substrate moves from the last position at the time t17 when the first loop movement ends to the first position of the second loop movement, the initial position P2 of the second loop movement is The first position of the first loop movement and the shift distance (d) is moved. In this case, the shift distance d may be determined to be different from the above-described step-by-step advance distance Lf, for example, to be smaller. This is because if the shift distance d is equal to the above-mentioned step-up distance Lf, the above-mentioned 'tunneling' phenomenon cannot be prevented.

That is, at the start of the second loop movement, the substrate starts at a position spaced apart by the shift distance d as compared with the start of the first loop movement. As described above, in the case of repeating each loop movement, if the initial position of each loop movement is spaced apart by the shift distance, it is possible to prevent the intrusion of the above-mentioned foreign matter.

FIG. 7 illustrates a case where the first layer 130 and the second layer 140 are formed on the substrate 12 by performing the loop movement twice by the method according to FIG. 6. In this case, as described above, since the initial positions of the first loop movement and the second loop movement are spaced apart by the shift distance, the intermediate side wall 132 and the second step wall 132 of the first layer 130 deposited on the substrate 12 are moved. The stepwise intermediate side walls 142 of the layer 140 are arranged so as not to coincide with each other and to be shifted. Therefore, the 'tunneling' phenomenon shown in FIG. 5 does not occur, thereby preventing the invasion of foreign substances.

The method according to FIG. 6 described above is linearly moved from the last position of the substrate of the (m−1) (2 ≦ m ≦ n) loop movement to the initial position of the substrate of the m th loop movement as shown in FIG. 3. Alternatively, the present invention may be applied to a case of moving through a step movement including a plurality of step forward and step backwards.

Although the present specification has been described with reference to preferred embodiments of the invention, those skilled in the art may variously modify and change the invention without departing from the spirit and scope of the invention as set forth in the claims set forth below. It could be done. Therefore, it should be seen that all modifications included in the technical scope of the present invention are basically included in the scope of the claims of the present invention.

According to the present invention, when the thin film is deposited according to the relative movement of the substrate and the gas supplier, the loop movement distance of the substrate is minimized to the distance of at least one gas supply module by the relative movement of the substrate and the gas supplier. In order to minimize the internal volume of the thin film deposition apparatus. Accordingly, the installation area of the thin film deposition apparatus can be significantly reduced, and the cost can be reduced by reducing the amount of process gas required when the thin film is deposited on the substrate according to the decrease of the internal volume.

Claims

A gas supply unit for supplying a plurality of process gases and purge gases including a source gas and a reaction gas, and at least one gas supply module configured to exhaust the remaining process gases or the purge gas; And

And a substrate support part supporting a substrate and movably provided with respect to the gas supply part.

The substrate support performs at least one loop movement including a plurality of step forward and step backward movements, and the loop movement distance between the initial position and the last position of the substrate is one gas supply when the one loop movement is performed. Thin film deposition apparatus, characterized in that more than the distance of the module.
The method of claim 1,

Thin film deposition apparatus, characterized in that the step-by-step backward distance of the substrate support to the step-by-step backward is smaller than the step-by-step forward distance of the step-by-step forward.
The method of claim 2,

The advance step distance is 0.1 mm to 15mm, the step backward distance is a thin film deposition apparatus, characterized in that less than the step advance distance.
The method of claim 1,

When the loop movement is performed n times (n≥2)

And the substrate is linearly moved from the last position of the (m-1) (2 ≦ m ≦ n) loop movement to the initial position of the m th loop movement.
The method of claim 4, wherein

The initial position of the m-th loop movement is the same as the initial position of the (m-1) loop movement thin film deposition apparatus.
The method of claim 4, wherein

And the initial position of the m-th loop movement is shifted by a shift distance compared to the initial position of the (m-1) loop movement.
The method of claim 6,

The shift distance is thin film deposition apparatus, characterized in that different from the advance step distance.
The method of claim 1,

When the loop movement is performed n times (n≥2)

Moving from the last position of the (m-1) (2 ≤ m ≤ n) loop movement of the substrate to a first position of the m-th loop movement by a step movement including a plurality of step forward and step backward movements; Thin film deposition apparatus.
The method of claim 8,

The initial position of the m-th loop movement is the same as the initial position of the (m-1) loop movement thin film deposition apparatus.
The method of claim 8,

And the initial position of the m-th loop movement is shifted by a shift distance compared to the initial position of the (m-1) loop movement.
The method of claim 10,

The shift distance is thin film deposition apparatus, characterized in that different from the advance step distance.
The method of claim 1,

The gas supply unit having the at least one gas supply module is a thin film deposition apparatus, characterized in that the length of the substrate or more.