KR101372310B1 - Ald equipment for roll to roll type and ald method - Google Patents

Abstract

An object of the present invention is to provide a roll-to-roll atomic layer deposition apparatus that can simplify the configuration of the equipment, a general range of processes through the cycle control, and also improve the productivity. The present invention for achieving the above object is a vacuum chamber; Partition means for partitioning the interior of the vacuum chamber into a plurality of parallel partition chambers; A plurality of roller members rotatably installed in respective compartment chambers of the vacuum chamber; A heater unit for providing a process temperature required for the vacuum chamber; A process gas providing unit for providing a process gas for thin film deposition to the vacuum chamber; A separate supply line for supplying a process gas provided from said process gas providing unit to each compartment chamber; A vacuum / exhaust unit for evacuating the inside of the vacuum chamber and exhausting the process gas; A guide train for moving the deposition target along the process path from the release roller member on which the deposition target is wound in the roller member; A guide rail for guiding the guide train along a process path; Moving means for moving said guide train; Roll-to-roll atomic layer including an airtight member installed on the guide rail at the completion of one cycle of the process to complete the cycle process or to guide the guide train to the next cycle process. Provide deposition equipment.

Description

TECHNICAL FIELD [0001] The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method using a roll-

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method, and more particularly, it is possible to simplify the configuration of the equipment, to achieve uniformity of the thin film thickness of very high efficiency, and to control the general range through the cycle control The present invention relates to a roll-to-roll type atomic layer deposition apparatus and an atomic layer deposition method capable of improving the productivity.

Until now, physical vapor deposition (PVD) or chemical vapor deposition (CVD) techniques have been used for the manufacture of thin films for semiconductor devices. There is a limit to the application.

As is well known, in the case of atomic layer deposition (ALD), it is possible to deposit a thin film of nano-thickness with excellent uniformity even in a complicated three-dimensional structure, which is an essential deposition technology for manufacturing a nano-class semiconductor device. I am getting it. Such atomic layer deposition has the advantages of excellent step coverage and growth of high quality thin films, but has a limitation of low productivity.

In order to overcome the limitations of low productivity of atomic layer deposition, many researches are being conducted such as cyclic CVD, plasma enhanced ALD, batch type ALD, roll-to-roll ALD. have.

Among many studies, roll-to-roll ALD grows a large amount of thin film by growing a thin film in a continuous process on a flexible substrate through stable movement of a deposition target (typically, a flexible substrate) that is moved from roll to roll. Way.

In general, the thickness of the grown ALD thin film is determined according to the cycle (process). A cycle is a cycle, which means that the ALD process repeats periodically.

ALD refers to the four cycles, which are periodically repeated four cycles of source supply, purge, reaction supply, and purge. The method of controlling the cycle of these cycles is divided into temporal and spatial aspects.

The time divisional ALD system can control the thickness of the grown thin film by controlling the cycle by temporal division through adjustment of pulse time and purge time in the same spatial region. Time division ALD systems are used in most common ALD systems.

On the other hand, the space-divided ALD system is a method of controlling the thickness of the thin film by dividing the space where the process of source, reaction and purge takes place and controlling the cycle by the movement of space periodically. This spatially partitioned ALD system is commonly used in roll-to-roll ALD systems. The reason is that due to the nature of the roll-to-roll ALD system (the same mobility of the moving flexible substrate is required), there are some difficulties in controlling the cycle through time division. For this reason, the method of controlling a cycle is used by dividing the space of a pulse process and the space of a purge process.

However, in the conventional roll-to-roll ALD system, a large number of rollers were placed in the movement path of the flexible substrate to induce the movement path of the flexible substrate. As such, as the number of rollers increases as the number of process cycles of the flexible substrate increases, the number of rollers increases accordingly, which leads to a complicated configuration of the apparatus.

In addition, in the case of the conventional space-segmented roll-to-roll ALD system, due to the characteristics of the roll-to-roll ALD system, the deposition object is connected to the unwinding roller on which the deposition object is wound and the deposition object on the winding roller to wind the deposition object. Since there is a difficulty in the correction in, there is a problem in that there is a limit of the progress of a cycle process other than a predetermined cycle.

Therefore, the present invention has been proposed to solve the above-mentioned conventional problems, and the roll-to-roll method can simplify the configuration of the equipment, achieve uniformity of thin film thickness of very high efficiency, and also improve productivity. To provide an atomic layer deposition apparatus and atomic layer deposition method of the purpose.

In addition, the present invention provides a roll-to-roll type atomic layer deposition apparatus and atomic layer deposition method that can achieve a fluid cycle process by enabling the cycle control of the process in the space-division roll-to-roll atomic layer deposition equipment There is another purpose.

The solution of the present invention is not limited to those mentioned above, and other solutions not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention for achieving the above object and other features, a vacuum chamber; Partition means for partitioning the interior of the vacuum chamber into a plurality of parallel partition chambers; A plurality of roller members rotatably installed in respective compartment chambers of the vacuum chamber; A heater unit for providing a process temperature required for the vacuum chamber; A process gas providing unit for providing a process gas for thin film deposition to the vacuum chamber; A separate supply line for supplying a process gas provided from said process gas providing unit to each compartment chamber; A vacuum / exhaust unit for evacuating the inside of the vacuum chamber and exhausting the process gas; A guide rail installed along the deposition process path in the compartment chamber; A guide train for moving a deposition object along the guide rail; Moving means for moving said guide train; A route change device installed on the guide rail of the compartment chamber into which the purge gas of the process gas is introduced to complete the cycle process or to guide the guide train to the next cycle process; A process control device for controlling the route change device; And a station into which the guide train is fed to the compartment chamber at the start of the process or taken out when the process is completed, wherein the compartment means is a guide for guiding a deposition object between neighboring compartment chambers and an airtight to keep the guide airtight. Provided is a roll-to-roll type atomic layer deposition apparatus including a member.

In the present invention, the partition means partitions the vacuum chamber into a first compartment chamber, a second compartment chamber and a third compartment chamber; The process gas providing unit includes a first source gas source, a purge gas source, and a second source gas source, wherein the individual supply line supplies a first source gas from the first source gas source to the first compartment chamber. A supply line for supplying a purge gas from the purge gas source to the second compartment chamber, and a supply line for supplying a second source gas to the third compartment chamber from the second source gas source. have.

In the present invention, the heater unit includes a heater and a heater controller for controlling the heater, may be formed integrally with the roller member, the heater is made of a cylindrical heater formed on the outer edge of the roller member, It may be composed of a plurality of annular heaters arranged at regular intervals on the outer edge of the roller member.

In the present invention, the supply line further comprises an extension line extending into the vacuum chamber parallel to the roller member, the extension line is preferably formed with a plurality of gas outlet for discharging the process gas to the roller member side. Do.

In the present invention, the extension line of the supply line may be composed of two or more extension lines disposed symmetrically around the roller member about the roller member.

According to the present invention, the route change device comprises a process completed rail for guiding to complete the process of one cycle; A continuous process rail continuously connected to the guide rail on the process path to continue the next cycle of the process; A route change member installed at a branch point of the process completed rail and the continuous process rail to change a movement route of the guide train; And operation means for operating the route changing member.

In the present invention, the station is an input unit having an in-port (in-port) for the deposition object is pulled by the guide train to the compartment chamber side to which the purge gas is supplied before the start of the process; The deposition object having a predetermined cycle of processing may include an output station having one or more out-ports for being pulled out by the guide train and guided out of the compartment chamber to which purge gas is supplied.

According to a second aspect of the present invention, there is provided a roll-to-roll atomic layer deposition method comprising: transferring a deposition object through a roller member in a partition chamber divided into a plurality of sections in parallel; The process gas of the source gas and purge gas is continuously supplied to each of the partitioned partition chambers of the plurality of partition chambers separately, and the thin film deposition is sequentially performed on a flow in which the deposition object is transferred. Provided is a roll-to-roll type atomic layer deposition method for guiding to proceed to the next cycle process at the time of completing the one cycle process or completing the one cycle process.

In the second aspect of the present invention, the process gas may be supplied to the deposition object through an extension line extending in parallel to the roller member in each of the partition chambers.

In a second aspect of the present invention, before the deposition object is transported in the compartment chamber, the purge gas is injected into the compartment chamber, and then the source gas is introduced into the compartment chamber and the deposition object is transferred, It is preferred to include inducing out from the compartment chamber into which the purge gas is introduced at the time when the predetermined cycle process is completed.

According to the roll-to-roll atomic layer deposition apparatus and method according to the present invention, it is possible to simplify the configuration of the equipment, achieve uniformity of thin film thickness with a very high efficiency, and provide an effect of improving productivity. .

The present invention also provides the effect of enabling cycle control of the process to achieve a fluid cycle process.

The effects of the present invention are not limited to those mentioned above, and other solutions not mentioned may be clearly understood by those skilled in the art from the following description.

1 is a schematic view showing the configuration of a roll-to-roll type atomic layer deposition apparatus according to the present invention.
2 is a configuration diagram schematically showing a heater unit of an embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention.
3 is a configuration diagram schematically showing a heater unit of another embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention.
4 is a schematic diagram illustrating a guide train constituting a roll-to-roll type atomic layer deposition apparatus according to the present invention.
FIG. 5 is a schematic diagram illustrating a route change device configuring a roll-to-roll type atomic layer deposition apparatus according to the present invention.
6 is a configuration diagram schematically showing an example of a layout relationship between a station and a route change device in which a deposition target is introduced and guided out in a roll-to-roll atomic layer deposition apparatus according to the present invention.
FIG. 7 is an explanatory diagram for explaining an initial input process of an input unit station and a deposition object into which a deposition object is introduced into a partition chamber in a roll-to-roll atomic layer deposition apparatus according to the present invention.
8 is an explanatory diagram for schematically illustrating an output station in which a deposition target is guided out of a partition chamber in a roll-to-roll atomic layer deposition apparatus according to the present invention.
9 is a configuration diagram schematically showing another example of the arrangement relationship between the station and the route change device to which the deposition target is introduced and guided out in the roll-to-roll atomic layer deposition apparatus according to the present invention.
10 is an explanatory diagram for explaining an operation in which a deposition target is guided along a guide rail of a process path by a guide train in the roll-to-roll atomic layer deposition apparatus according to the present invention.
11 and 12 are views illustrating a cycle process diagram in a roll-to-roll method according to the present invention.
13 and 14 are conceptual views for explaining a form in which the process gas is supplied to the roller member side in the roll-to-roll atomic layer deposition equipment according to the present invention.
15 shows an atomic layer thin film growth process chart, (a) is a conventional atomic layer thin film growth process chart, (b) is an atomic layer thin film growth process chart according to the present invention.

Further objects, features and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Before describing the present invention in detail, it is to be understood that the present invention is capable of various modifications and various embodiments, and the examples described below and illustrated in the drawings are intended to limit the invention to specific embodiments It is to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Also, the terms " part, "" unit," " module, "and the like, which are described in the specification, refer to a unit for processing at least one function or operation, Software. ≪ / RTI >

In the following description of the present invention with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals, and redundant explanations thereof will be omitted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

Hereinafter, a roll-to-roll atomic layer deposition apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a configuration diagram schematically showing the configuration of a roll-to-roll atomic layer deposition apparatus according to the present invention, Figure 2 is a heater unit of an embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention 3 is a configuration diagram schematically showing, and FIG. 3 is a configuration diagram schematically showing a heater unit of another embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention. 4 is a schematic view showing a guide train constituting a roll-to-roll atomic layer deposition apparatus according to the present invention, and FIG. 5 is a roll-to-roll atomic layer deposition apparatus according to the present invention. It is a block diagram which shows schematically the apparatus for changing a route.

First, as shown in Figures 1, 2, 4 and 5, the roll-to-roll atomic layer deposition apparatus according to the present invention comprises a vacuum chamber 100; Partition means (not shown) for partitioning the inside of the vacuum chamber (100) into a plurality of parallel partition chambers (110, 120, 130); A plurality of roller members 200 rotatably installed in respective compartment chambers of the vacuum chamber 100; A heater unit for providing a process temperature required for the vacuum chamber (100); A process gas providing unit 400 for providing a process gas for thin film deposition to the vacuum chamber 100; Separate supply lines (510, 520, 530) for supplying the process gas provided from the process gas providing unit 400 to each compartment chamber; A vacuum / exhaust unit (600) for evacuating the inside of the vacuum chamber (100) and for exhausting a process gas; A guide train 700 for moving the deposition object along the process path; A guide rail (not shown) for guiding the guide train 700 along a process path; Moving means (not shown) for moving the guide train 700; A route change device 800 installed on the guide rail in the compartment chamber into which the purge gas of the process gas is introduced to complete the cycle process or to guide the guide train to the next cycle process; A process control device (not shown) for controlling the route change device 800; And a station 900 in which the guide train 700 is introduced into the compartment chamber at the start of the process or taken out to the outside when the process is completed. And an airtight member for keeping it confidential.

A mass flow controller (MFC) may be installed between the process gas providing unit 400 and the individual supply lines 510, 520, and 530 to control the flow rate of each process gas provided to the vacuum chamber 100.

The vacuum chamber 100 forms a plurality of compartment chambers according to the number corresponding to each roller member 200. In the example shown in the drawing, three roller members 200 are installed, and the first compartment from the left side. The chamber 110, the second compartment chamber 120, and the third compartment chamber 130 are formed.

The guide formed in the partition means is formed in the form of a slot in which the deposition object (for example, a flexible substrate) can be moved, and the airtight means allows the movement of the deposition object during movement while providing a space between adjacent compartment chambers. It may be made of a seal member capable of maintaining airtightness.

The roller member 200 is preferably formed in a cylindrical or cylindrical shape. In the embodiment shown in the drawings the roller member 200 is shown to be rotatably supported by a shaft on one side, it can be seen that both ends of the roller member 200 can be rotatably supported. Hereinafter, a roller member positioned in the first compartment chamber 110 may be a first roller member, a roller member positioned in the second compartment chamber 120 may be a second roller member, and a roller positioned in the third compartment chamber 130. The member is called a third roller member.

The heater unit is for promoting a reaction between the deposition target and the process gas, and includes a heater 210 (see FIG. 2) and a heater controller (not shown) for controlling the heater 210.

Here, the heater 210 of the heater unit may be integrally formed with the roller member 200. As shown in Figure 2 may be made of a cylindrical heater integrally formed on the outer edge of the roller member 200.

In addition, the heater 210 of the heater unit may be configured as shown in FIG. 3 is a configuration diagram schematically showing a heater unit of another embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention.

As shown in FIG. 3, the heater 210 of the heater unit may be formed integrally with the outer edge of the roller member 200, and may include a plurality of annular heaters disposed at regular intervals.

The process gas providing unit 400 is to provide a process gas required for each process into the vacuum chamber 100 through individual supply lines 510, 520, and 530, and in FIG. 1, the first compartment chamber 110. The first source gas source 410 for providing the first source gas to the side), the purge gas source 420 for providing the purge gas to the second compartment chamber 120, and the third compartment chamber 130 for the first source gas source 410. The example which consists of the 2nd source gas source 430 for providing 2 source gas is shown.

In the individual supply lines 510, 520, 530, the supply line 510 supplies the first source gas from the first source gas source 410 to the first compartment chamber 110 in which the first roller member is located. And a supply line 520 is installed to supply the purge gas from the purge gas source 420 to the second compartment chamber 120 in which the second roller member is located, and the supply line 530 is the second source gas source 430. Is supplied to supply a second source gas from the third compartment chamber 130 where the third roller member is located.

Here, each of the individual supply lines 510, 520, 530 further includes an extension line extending into the vacuum chamber 100 in parallel with the roller member 200, as shown in FIG. 1. A plurality of gas discharge ports for discharging the process gas to the roller member side is formed.

The extension lines of the individual supply lines 510, 520, 530 may consist of two or more extension lines which are arranged symmetrically around the roller member about the roller member 200.

In this case, it can be fully understood that the arrangement of the two or more extension lines is provided with an arrangement relationship that does not interfere with the movement path through which the deposition object conveyed by the roller member 200 is moved.

In the present invention, there is no connection of the deposition object between the first roller member and the third roller member before the initial process. As will be described later, the deposition object is purged by the guide train 700 through the in-port 811 of the input station 810 of the station 800 installed on the side of the second compartment chamber 120. Is injected into the provided second compartment chamber 120, and then moves along the guide rail to the first compartment chamber 110.

The guide train 700 is connected to the front end of the deposition target through the wire 710 to drive the movement of the deposition target while moving the guide rail disposed along the process path.

The route change device 800 is installed at the end of the guide rail where one cycle of the process is completed, that is, at the second compartment chamber side. Specifically, the guide rail at which the one cycle process is finished includes one or more process completed rails 810 for guiding to complete the one cycle process, and a continuous process continuously connected to the guide rails on the process path to follow the next cycle of the process. The rail 820 is included, and the route changing device 800 is installed at a branch point of the process completed rail 810 and the continuous process rail 820.

The route change device 800 may include a route change member (not shown) installed at a guide rail at a branch point of the process completed rail 810 and the continuous process rail 820 to change the movement route of the guide train 700; And operation means for operating the route changing member.

The process control device controls a process cycle (cycle) through the route change device 800 provided at a process completion point of one cycle. In other words, the process control device controls the route change device 800 for the desired cycle process by controlling the operation means electrically or mechanically (or automatically or manually) to proceed to the next process. And the route change device of the last cycle controls the manipulating means to move the guide train 700 to the finished rail 810. This system enables cycle control of n cycles.

Next, with reference to FIGS. 6-9, the arrangement | positioning relationship of the station and the route changing apparatus for injecting into and out of a deposition chamber of a vapor deposition object is demonstrated. FIG. 6 is a configuration diagram schematically showing an example of a layout relationship between a station and a route changing apparatus in which a deposition target is introduced and guided out in a roll-to-roll atomic layer deposition apparatus according to the present invention, and FIG. In the roll-to-roll atomic layer deposition apparatus according to the present invention, an input unit station and a deposition target are introduced into the partition chambers. An explanatory diagram for schematically illustrating an output station in which the deposition object is guided out of the compartment chamber in the equipment. FIG. 9 is a configuration diagram schematically illustrating another example of an arrangement relationship between a station to which a deposition target is introduced and guided out of a roll-to-roll atomic layer deposition apparatus according to the present invention and a route change device.

6 to 8, the station 900 is an in-port for injecting the deposition object into the compartment chamber, that is, the second compartment chamber 120 side to which the purge gas is supplied before the start of the process. Input station 910 with an input station 910 and an output station with an out-port 921 for the purpose of carrying out a deposition process after completion of a predetermined process (cycle) from the second compartment chamber 120. 920.

In the figure, although the input unit 910 and the output unit 920 constituting the station 900 is shown to be divided, it may be composed of one station, the position may be made upside down.

The in-port 911 of the inlet station 910 is configured as a single port to communicate with the second compartment chamber 120 side, and the guide train 700 connected to the deposition object is the inlet station 910. It is moved through the in-port 911 of the first rail along the guide rail as shown in Figure 7 (110).

The out-port 921 of the output station 920 is composed of n out-ports as shown in FIG. 6, and the n out-ports in front of the n out-ports correspond to the number of n out-ports, respectively. The route changing device 800 as shown in FIG. 5 is provided. The n out-ports are continuous with the process completed rails 810 of the route change device 800.

Here, the existence of n out-ports is related to the number of process cycles (control number). For example, when the number of process cycles is determined by the process control device as two process cycles, the route change device 800 to be described later corresponds to this. To determine the route, that is, the first route changing device 800 is a mode for guiding to the next periodic process (that is, a change mode to the continuous process rail 820), and the second route changing device 800 is the second. It is in a mode that leads to the out-port 821 (ie, the change mode to the second process completed rail 810).

The output station 920 of FIG. 9 illustrates a station with a single out-port 921, unlike the station 920 having a plurality of out-ports of FIG. 7, which is dependent upon a predetermined number of cycle processes. Dedicated output station for a single cycle process with the out-port positioned at the end of the cycle.

Next, the operation of the roll-to-roll atomic layer deposition apparatus according to the present invention configured as described above will be described with reference to FIGS. 10 to 14.

10 is an explanatory diagram for explaining an operation in which a deposition target is guided along a guide rail of a process path by a guide train in the roll-to-roll atomic layer deposition apparatus according to the present invention. 11 and 12 are views illustrating a cycle process diagram in a roll-to-roll method according to the present invention, Figures 13 and 14 is a process gas is supplied to the roller member side in the roll-to-roll atomic layer deposition equipment according to the present invention It is a conceptual diagram for explaining the form.

First, as shown in FIG. 7, the deposition object (flexible substrate) to be pulled by the guide train 700 through the in-port 911 of the input station 910 enters the second compartment chamber 120, and then In the second compartment chamber 120, it is towed by the guide train along the guide rail and moves to the first compartment chamber 110.

Then, the deposition target is moved along the guide rail of the vacuum chamber while being pulled by the guide train 700, wherein the process gases injected from the process gas providing unit 400 are supplied to the vacuum chamber 100, respectively. The lines 510, 520, 530 are continuously supplied to the corresponding compartment chambers 110, 120, 130 of the vacuum chamber 100.

As described above, in the state in which each process gas is supplied to each of the compartment chambers 110, 120, and 130, a deposition target (eg, a flexible substrate) is provided by a guide train 700 moving along a guide rail on a process path. Is passed through each compartment chamber (110, 120, 130).

While the deposition object is being moved, the deposition object is passed through the compartment chambers 110, 120, and 130 by the process gases supplied to the respective compartment chambers 110, 120, and 130. / Purge / Pulse / Purge) to grow the thin film.

In the present invention, the process time of each process may control the process time of the corresponding region during the actual continuous process by adjusting the diameter of the path passing through the region (the diameter of the process route). 12 shows a single process path according to one position (one cycle).

In particular, the present invention allows the continuous process to proceed by moving the actual process path by the guide train 700 to pull the deposition object, and the process cycle determined by the process control device is a route change device located on the guide rail (800) In other words, the process of moving to the next process (next in FIG. 5) or completion of the process (end in FIG. 5) is determined by the route changing device 800 located on the guide rail at the end of one cycle of the process. This enables a fluid cycle process.

For example, if ordered in a one cycle process, the route change device 800 on the guide rail that completes one cycle in the second compartment chamber 120 guides the guide train 700 to the process completed rail 810, It is directed to the output station 920 via an out-port 921 configured continuously on the process completion rail 810.

On the other hand, as shown in Figure 2 and 3, the roller member 200 is provided with a heater 210 on the outer periphery performs two functions of moving the deposition target and temperature control of the deposition target.

In other words, the roller member 200 not only serves to move the deposition target but also the heater 210 is integrally formed on the roller member 200 to perform a temperature control function for promoting the reaction of the gas of the deposition target. can do. The heater 210 located at the outer edge of the roller member 200 controls the temperature of the deposition object moved by the roller member 200 to promote the reaction.

In addition, in the present invention, the individual supply lines (510, 520, 530) has an extension line located in parallel to the roller member 200, the roller member 200 inside each compartment chamber through the gas outlet formed therein By providing a process gas to the side) it is possible to grow a thin film of uniform thickness.

In the gas injection device of the conventional atomic layer deposition equipment, the gas injection hole is located in the reaction zone, so that a difference in the amount of gas is generated according to the area inside the chamber, thereby limiting the thin film growth of the uniform thickness of the actual flexible substrate. . The present invention overcomes the disadvantages of the conventional roll-to-roll atomic layer deposition equipment, and injects gas into the compartment chamber through the gas outlet of the extension line in the entire area of each compartment chamber 110, 120, 130. Accordingly, the gas outlet of the extension line is present at a position that interferes with the movement path of the deposition object to minimize the loss of gas.

In other words, the gas outlets of the extension lines of the individual supply lines 510, 520, and 530 are present at locations where they can interfere with the path along which the deposition object moves. This minimizes the amount of gas lost by providing gas directly to the deposition object. When the extension line is branched and formed in the circumference of the roller member 200, a thin film having the same thickness is grown on the deposition target that is moved by providing gas to the entire surface of the roller member 200 by 360 degrees as shown in FIG. 14. Make it possible.

In the exemplary embodiment shown in the drawing, a cycle of a process is performed in three compartment chambers, and the three compartment chambers include a first compartment chamber (first pulse chamber) 110 and a second compartment chamber ( The example comprised by the purge chamber and the 3rd compartment chamber (2nd pulse chamber) is shown. In each compartment chamber, the reaction of the gas and the deposition object takes place independently.

The pulse process in which the initial first source gas is injected is performed in the first compartment chamber 110. When the first source gas is injected into the first compartment chamber 110, the deposition object (eg, the flexible substrate) that is moved in the first compartment chamber 110 may react with the first source gas during movement.

Then, the deposition object moved to the second compartment chamber 120 is moved to the third compartment chamber 130 after a process of removing unreacted gas (purge gas) and reaction adducts in the second chamber 120. To react with the second source gas. After reacting with the second source gas in the third compartment chamber 130, the second compartment chamber 120 is moved to the second compartment chamber 120 to remove residual gas, and so on. This four-step process is called a cycle.

In the present invention, this one cycle repetition process can be fluidly controlled through the route change device 800. In other words, at the end of the process of each cycle (after the second purge process), the n-cycle process is possible through the route change device 800. The flexible cycle process allows the growth of thin films of various thicknesses and the growth of thin films of more general atomic layer deposition by using various types of source gases.

Hereinafter, an embodiment of the Al ₂ O ₃ thin film growth process through the roll-to-roll atomic layer deposition apparatus according to the present invention will be described with reference to FIG. 15. 15 shows an atomic layer thin film growth process chart, (a) is a conventional atomic layer thin film growth process chart, (b) is an atomic layer thin film growth process chart according to the present invention.

Figure 15 (a) is a schematic diagram showing the growth step of the Al ₂ O ₃ thin film through a conventional atomic layer deposition equipment. Al ₂ O ₃ growth through the conventional atomic layer deposition equipment is a growth method in which the process gas required for each process is sequentially injected over time.

On the other hand, Figure 15 (b) is a diagram showing the growth process of Al ₂ O ₃ through the roll-to-roll atomic layer deposition equipment according to the present invention.

The biggest difference from the existing general atomic layer deposition equipment is that the process gas is not injected over time, but each compartment chamber is separated independently, and the process gas of each compartment chamber is continuously injected.

The deposition target (flexible substrate) is moved to the first compartment chamber 110 region (the first source gas region) by the guide train 700 connected to the initial release roller member. The surface reaction is induced by a trimethylaluminum (TMA) supplied from the first source gas source 410 in the process of moving along the guide rail of the region of the first source gas to be deposited to the first source gas region.

The deposition object that has moved in the first compartment chamber 110 is moved to the next region of the second compartment chamber 120 (purge region) by the guide train 700, and the deposition object moved to the purge region is Unreacted sources, reaction adducts, etc. are removed in the purge process step.

The deposition object moved by the guide train 700 moving along the guide rail on the process path is moved to the third compartment chamber 130 (second source gas region) after the purge process. In the step of the second source gas region, reactants (H ₂ O & O ₃ ) are supplied to react with _the surface groups _of AlCh ₃ or AlCH ₂ adsorbed on the surface, and then guided to the next purge region to have no reaction. One cycle of Al ₂ O ₃ thin film is grown by removing one reactant and reaction adduct.

Here, the cycle of the Al ₂ O ₃ cycle is determined by the route changer 800 located at the end after the process of the region of the purge process (that is, the time point at which one cycle is completed). By controlling the cycle period, the thickness of the Al ₂ O ₃ dielectric thin film grown on the actual deposition object can be controlled.

An example of one cycle and two cycles of growth of an Al ₂ O ₃ thin film will be described below.

Example 1: 1 cycle process

The process of Al ₂ O ₃ in one cycle through the roll-to-roll atomic layer deposition equipment of the present invention. Set the route change device for 1 cycle process before the actual process. That is, since the process of Al ₂ O ₃ of one cycle proceeds, the route change device is operated to execute only one cycle of the actual cycle. In one cycle of the route change device, after the process is completed, the deposition object comes out to the completed rail 810. Set up a route so that you can

In addition, TMA, which is a precursor of Al, is continuously injected into the first compartment chamber 110 so that a thin film of Al ₂ O ₃ may be grown on the deposition target on which the thin film is grown. Inert gas, and finally the third compartment chamber 130 is set to be injected with a substance of H ₂ O or O ₃ as the reaction gas.

The deposition object (flexible substrate) guided by the initial guide train 700 during the actual process is led to the process path of the guide rail of the first compartment chamber 110 along the guide rail of the guide train. While the deposition object moves in the first compartment chamber 110, the TMA flowing into the first compartment chamber 110 may be reacted on the deposition object.

After the TMA process is completed, the deposition object is moved to the second compartment chamber 120 by the guide train 700 to proceed with the purge process. At this time, the unreacted gas or reaction by-products on the deposition target are removed by the purge process.

After the purge process is performed, a reacting process is performed in the third compartment chamber 130. In this process, the deposition target is guided by the guide train 700 as in the previous process, and the process proceeds.

While the deposition object moves through the third compartment chamber 130, the Al atoms of the deposition object and the O atoms of the third compartment chamber 130 are bonded to form an aluminum oxide thin film of Al ₂ O ₃ . After the reaction process is completed, residual gas and the like are removed through the purge (second compartment chamber 120) process as in the previous process. The deposition object from which residual gas is removed through the purge process is moved to the branch point by the guide train 700. At this time, the movement path of the guide train is determined by the route change device 800 of the branching point. Since the process is set to proceed only one cycle before the process proceeds, the guide train 700 is completed after the one cycle process is completed. Guided to the rail 810, the deposition object is also moved by the guide train 700 to complete the process of one cycle.

Through this process, the Al ₂ O ₃ thin film as much as one cycle may be obtained on the deposition target.

Example 2: Two Cycle Process

The route change device is set to execute a two-cycle process before the actual process. Since two cycles of Al ₂ O ₃ are in progress, one cycle change device and one cycle change device must be set. The cycle change device of one cycle is set so that the guide train 700 can be guided to the continuous process rail 820 to be moved to the first compartment chamber 110 to advance the process of two cycles, and the route change of two cycles is performed. The device sets up a route to allow the deposition object to exit the completion rail 810 after the process is complete.

In the above state, the TMA, which is a precursor of Al, is continuously injected into the first compartment chamber 110 so that a thin film of Al ₂ O ₃ may be grown on the deposition target on which the thin film is grown. Inert gas for the purge process, and finally the third compartment chamber 130 is set to be injected with a substance of H ₂ O or O ₃ as a reactant gas (reactant gas).

The deposition object guided by the initial guide train 700 during the actual process is led to the process path of the guide rail of the first compartment chamber 110 along the guide rail on the process path.

During the initial one-cycle process, the TMA flowing into the first compartment chamber 110 reacts on the deposition object while the deposition object moves through the first compartment chamber 110.

After the TMA process is completed, the deposition object is moved to the second compartment chamber 120 along the guide rail on the process path by the guide train 700 to proceed with the purge process. At this time, the unreacted gas or reaction by-products on the deposition target are removed by the purge process.

After the purge process is performed, the reaction process is performed in the third compartment chamber 130. In this process, the deposition target is guided by the guide train 700 as in the previous process, and the process proceeds. While the deposition object moves through the third compartment chamber 130, the Al atoms of the deposition object and the O atoms of the third compartment chamber 130 are bonded to form an aluminum oxide thin film of Al ₂ O ₃ . After the reaction process is completed, the residual gas and the like are removed through the purge process (second compartment chamber) as in the previous process.

The deposition object from which residual gas is removed through the purge process is moved to the branch point by the guide train 700. The guide train 700 moved to the branch point is determined by the control of the route changing device 800, and since the two cycles are set to proceed before the process, the route change after the one cycle process is finished. The apparatus is set such that the guide train 700 is guided in a two cycle process.

Therefore, the guide train 700 is guided to the continuous process rail 820 is moved back to the first compartment chamber 110 where the process of the TMA proceeds. The process cycle of the two cycles is also processed in the same stage as the process stage of the one cycle, except that the two-cycle route changing device after the completion of the last purge process of the two cycles has a guide train 700 from the branch point to the completion rail 810. It is set to be derived.

Therefore, when the guide train 700 is moved to the completion rail 810, the deposition object is also moved by the guide train 700 to complete the process of two cycles.

Through this process, Al ₂ O ₃ thin films of about 2 cycles can be obtained on the flexible substrate.

As described above, the roll-to-roll atomic layer deposition apparatus according to the present invention can greatly simplify the configuration of the equipment as compared to the conventional roll-to-roll atomic layer deposition apparatus, and is applied to the entire surface of the deposition object moved by the roller member. It is possible to provide a process gas for the uniformity of the thin film thickness of very high efficiency.

In addition, the present invention can grow the thin film continuously in the process of moving each compartment chamber in which each of the process gases are continuously injected can greatly improve the productivity.

The present invention also provides the effect of enabling cycle control of the process to achieve a fluid cycle process.

The embodiments and the accompanying drawings described in the present specification are merely illustrative of some of the technical ideas included in the present invention. Accordingly, the embodiments disclosed herein are for the purpose of describing rather than limiting the technical spirit of the present invention, and it is apparent that the scope of the technical idea of the present invention is not limited by these embodiments. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: Vacuum chamber
110, 120, 130: compartment chamber
200: roller member
210: heater
400: process gas providing unit
410: first source gas source
420: purge gas source
430: second source gas source
510, 520, 530: individual supply lines
600: vacuum / exhaust unit
700: guide train
800: route change device
810: finished rail
820: continuous process rail

Claims (11)

A vacuum chamber;
Partition means for partitioning the interior of the vacuum chamber into a plurality of parallel partition chambers;
A plurality of roller members rotatably installed in respective compartment chambers of the vacuum chamber;
A heater unit for providing a process temperature required for the vacuum chamber;
A process gas providing unit for providing a process gas for thin film deposition to the vacuum chamber;
A separate supply line for supplying a process gas provided from said process gas providing unit to each compartment chamber;
A vacuum / exhaust unit for evacuating the inside of the vacuum chamber and exhausting the process gas;
A guide rail installed along the deposition process path in the compartment chamber;
A guide train for moving a deposition object along the guide rail;
Moving means for moving said guide train;
A route change device installed on the guide rail of the compartment chamber into which the purge gas of the process gas is introduced to complete the cycle process or to guide the guide train to the next cycle process;
A process control device for controlling the route change device; And
At the start of the process the guide train comprises a station which is introduced into the compartment chamber or taken out when the process is completed,
The partition means includes a guide for guiding a deposition object between neighboring compartment chambers and an airtight member for keeping the guide airtight,
The station includes an inlet station having an in-port for depositing the object to be drawn by the guide train to the compartment chamber to which the purge gas is supplied before the start of the process; The roll-to-roll method includes an output station having one or more out-ports for which a predetermined period of time-processed deposition object is pulled by the guide train and guided out of a compartment chamber to which purge gas is supplied. Atomic layer deposition equipment.
The method of claim 1,
The partition means partitions the vacuum chamber into a first compartment chamber, a second compartment chamber and a third compartment chamber;
The process gas providing unit includes a first source gas source, a purge gas source, and a second source gas source,
Wherein the individual supply line comprises a supply line for supplying a first source gas from the first source gas source to the first compartment chamber, a supply line for supplying purge gas from the purge gas source to the second compartment chamber, And a supply line for supplying the second source gas from the second source gas source to the third compartment chamber
Roll-to-roll type atomic layer deposition equipment.
The method of claim 1,
The heater unit includes a heater and a heater controller for controlling the heater,
Integrally formed with the roller member
Roll-to-roll type atomic layer deposition equipment.
The method of claim 3,
The heater is made of a cylindrical heater formed on the outer edge of the roller member, or made of a plurality of annular heater disposed at a predetermined interval on the outer edge of the roller member
Roll-to-roll type atomic layer deposition equipment.
3. The method of claim 2,
The supply line further includes an extension line extending into the vacuum chamber parallel to the roller member, wherein the extension line is formed with a plurality of gas outlets for discharging the process gas to the roller member side.
Roll-to-roll type atomic layer deposition equipment.
6. The method of claim 5,
The extension line of the supply line consists of two or more extension lines which are arranged symmetrically around the roller member about the roller member.
Roll-to-roll type atomic layer deposition equipment.
The method of claim 1,
The route change device
A process completion rail for guiding the completion of one cycle of the process;
A continuous process rail continuously connected to the guide rail on the process path to continue the next cycle of the process;
A route change member installed at a branch point of the process completed rail and the continuous process rail to change a movement route of the guide train; And
And operating means for operating the route changing member.
Roll-to-roll type atomic layer deposition equipment.
delete In a roll-to-roll type atomic layer deposition method,
Transferring an object to be deposited through a roller member in a plurality of partitioned chambers partitioned in parallel;
Including the process gas of the source gas and the purge gas is continuously supplied to each of the partitioned partition chambers of the plurality of partition chambers separately, and the thin film deposition is sequentially performed in a flow in which the deposition object is transferred,
Selecting to complete the one cycle process of the deposition object or to proceed to the next cycle process continuously at the time of completing the one cycle process,
After the deposition object is transferred in the compartment chamber, the gas is introduced into a compartment chamber into which the purge gas is input, and then, the source gas is transferred to the compartment chamber, and then the deposition object is transferred. Roll-to-roll method atomic layer deposition method comprising guiding out from the compartment chamber is injected.
10. The method of claim 9,
Supplying the process gas to an object to be deposited through an extension line extending parallel to the roller member in each compartment chamber;
Roll-to-roll method atomic layer deposition method.
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