KR101372309B1 - Ald equipment for roll to roll type and ald method - Google Patents

Abstract

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method, and more particularly, a roll that can simplify the configuration of the equipment, achieve uniformity of thin film thickness with very high efficiency, and improve productivity. An object of the present invention is to provide a two-roll atomic layer deposition apparatus and atomic layer deposition method. The present invention for achieving the above object is a vacuum chamber; Partition means for partitioning the interior of the vacuum chamber into a plurality of parallel partition chambers; A roller member rotatably installed in each compartment chamber of the vacuum chamber to move the deposition object; A rotating unit for rotating the roller member; A heater unit for providing a process temperature required for the vacuum chamber; A process gas providing unit for providing a process gas for thin film deposition to the vacuum chamber; A separate supply line for supplying a process gas provided from said process gas providing unit to each compartment chamber; And a vacuum / exhaust unit for evacuating the inside of the vacuum chamber and evacuating the process gas, wherein the partition means includes a guide for guiding a deposition object between neighboring compartment chambers and an airtight member for keeping the guide airtight. It provides a roll-to-roll type atomic layer deposition apparatus comprising a.

Description

TECHNICAL FIELD [0001] The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method using a roll-

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method, and more particularly, a roll that can simplify the configuration of the equipment, achieve uniformity of thin film thickness with very high efficiency, and improve productivity. It relates to a two-roll atomic layer deposition equipment and atomic layer deposition method.

Until now, physical vapor deposition (PVD) or chemical vapor deposition (CVD) techniques have been used for the manufacture of thin films for semiconductor devices. There is a limit to the application.

As is well known, in the case of atomic layer deposition (ALD), it is possible to deposit a thin film of nano-thickness with excellent uniformity even in a complicated three-dimensional structure, which is an essential deposition technology for manufacturing a nano-class semiconductor device. I am getting it. Such atomic layer deposition has the advantages of excellent step coverage and growth of high quality thin films, but has a limitation of low productivity.

In order to overcome the limitations of low productivity of atomic layer deposition, many researches are being conducted such as cyclic CVD, plasma enhanced ALD, batch type ALD, roll-to-roll ALD. have.

Among many studies, roll-to-roll ALD grows a large amount of thin film by growing a thin film in a continuous process on a flexible substrate through stable movement of a deposition target (typically, a flexible substrate) that is moved from roll to roll. Way.

In general, the thickness of the grown ALD thin film is determined according to the cycle (process). A cycle is a cycle, which means that the ALD process repeats periodically.

The ALD is called a cycle of four cycles in which four processes of source / purge / reactant / purge are periodically repeated. The method of controlling the cycle of these cycles is divided into temporal and spatial aspects.

The time divisional ALD system can control the thickness of the grown thin film by controlling the cycle by temporal division through adjustment of pulse time and purge time in the same spatial region. Time division ALD systems are used in most common ALD systems.

On the other hand, the space-divided ALD system is a method of controlling the thickness of the thin film by dividing the space where the process of source, reaction and purge takes place and controlling the cycle by the movement of space periodically. This spatially partitioned ALD system is commonly used in roll-to-roll ALD systems. The reason is that due to the nature of the roll-to-roll ALD system (the same mobility of the moving flexible substrate is required), there are some difficulties in controlling the cycle through time division. For this reason, the method of controlling a cycle is used by dividing the space of a pulse process and the space of a purge process.

However, in the conventional roll-to-roll ALD system, a large number of rollers were placed in the movement path of the flexible substrate to induce the movement path of the flexible substrate. As such, as the number of rollers increases as the number of process cycles of the flexible substrate increases, the number of rollers increases accordingly, which leads to a complicated configuration of the apparatus.

Therefore, the present invention has been proposed to solve the above-mentioned conventional problems, and the roll-to-roll method can simplify the configuration of the equipment, achieve uniformity of thin film thickness of very high efficiency, and also improve productivity. To provide an atomic layer deposition apparatus and atomic layer deposition method of the purpose.

The solution of the present invention is not limited to those mentioned above, and other solutions not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention for achieving the above object and other features, a vacuum chamber; Partition means for partitioning the interior of the vacuum chamber into a plurality of parallel partition chambers; A roller member rotatably installed in each compartment chamber of the vacuum chamber to move the deposition object; A rotating unit for rotating the roller member; A heater unit for providing a process temperature required for the vacuum chamber; A process gas providing unit for providing a process gas for thin film deposition to the vacuum chamber; A separate supply line for supplying a process gas provided from said process gas providing unit to each compartment chamber; And a vacuum / exhaust unit for evacuating the inside of the vacuum chamber and evacuating the process gas, wherein the partition means includes a guide for guiding a deposition object between neighboring compartment chambers and an airtight member for keeping the guide airtight. It provides a roll-to-roll type atomic layer deposition apparatus comprising a.

In the present invention, the partition means partitions the vacuum chamber into a first compartment chamber, a second compartment chamber and a third compartment chamber; The process gas providing unit includes a first source gas source, a purge gas source, and a second source gas source, wherein the individual supply line supplies a first source gas from the first source gas source to the first compartment chamber. A supply line for supplying a purge gas from the purge gas source to the second compartment chamber, and a supply line for supplying a second source gas to the third compartment chamber from the second source gas source. have.

In the present invention, the heater unit includes a heater and a heater controller for controlling the heater, and may be integrally formed with the roller member.

According to the present invention, the heater may be made of a cylindrical heater formed on the outer edge of the roller member, or may be made of a plurality of annular heaters disposed at regular intervals on the outer edge of the roller member.

In the present invention, the supply line further includes an extension line extending into the vacuum chamber parallel to the roller member, the extension line may be formed with a plurality of gas outlets for discharging the process gas to the roller member side.

According to the invention, the extension line of the supply line may consist of two or more extension lines which are arranged symmetrically around the roller member about the roller member.

According to a second aspect of the present invention, there is provided a roll-to-roll atomic layer deposition method comprising: transferring a deposition object through a roller member in a partition chamber divided into a plurality of sections in parallel; Roll-to-roll-type atom including the continuous deposition of the process gas of the source gas and purge gas in each of the partitioned partition chambers of the plurality of partition chambers sequentially and sequentially in the flow in which the deposition target is transported Provided is a layer deposition method.

In the present invention, the process gas may be supplied to the deposition target through an extension line extending in parallel to the roller member in each of the partition chambers.

According to the roll-to-roll atomic layer deposition apparatus and method according to the present invention, it is possible to simplify the configuration of the equipment, achieve uniformity of thin film thickness with a very high efficiency, and provide an effect of improving productivity. .

The effects of the present invention are not limited to those mentioned above, and other solutions not mentioned may be clearly understood by those skilled in the art from the following description.

1 is a schematic view showing the configuration of a roll-to-roll type atomic layer deposition apparatus according to the present invention.
2 is a configuration diagram schematically showing a heater unit of an embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention.
3 is a configuration diagram schematically showing a heater unit of another embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention.
4 and 5 are conceptual views for explaining the form in which the process gas is supplied to the roller member in the roll-to-roll atomic layer deposition equipment according to the present invention.

Further objects, features and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Before describing the present invention in detail, it is to be understood that the present invention is capable of various modifications and various embodiments, and the examples described below and illustrated in the drawings are intended to limit the invention to specific embodiments It is to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Also, the terms " part, "" unit," " module, "and the like, which are described in the specification, refer to a unit for processing at least one function or operation, Software. ≪ / RTI >

In the following description of the present invention with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals, and redundant explanations thereof will be omitted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

Hereinafter, a roll-to-roll atomic layer deposition apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a configuration diagram schematically showing the configuration of a roll-to-roll atomic layer deposition apparatus according to the present invention, Figure 2 is a heater unit of an embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention Schematically shows the configuration.

As shown in Figure 1 and 2, the roll-to-roll atomic layer deposition apparatus according to the present invention comprises a vacuum chamber 100; Partition means (not shown) for partitioning the inside of the vacuum chamber (100) into a plurality of parallel partition chambers (110, 120, 130); A plurality of roller members (200) rotatably installed in respective compartment chambers of the vacuum chamber (100) to move the deposition object; A rotating unit 300 for rotating the roller member 200; A heater unit for providing a process temperature required for the vacuum chamber (100); A process gas providing unit 500 for providing a process gas for thin film deposition to the vacuum chamber 100; Separate supply lines (610, 620, 630) for supplying the process gas provided from the process gas providing unit 500 to each compartment chamber; And a vacuum / exhaust unit 700 for evacuating the inside of the vacuum chamber 100 and exhausting the process gas, wherein the partition means includes a guide and a guide for guiding a deposition object between neighboring compartment chambers. An airtight member for keeping it airtight.

Reference numeral 800 is a mass flow controller (MFC) for controlling the flow rate of each process gas provided from the process gas providing unit 500 to the vacuum chamber 100 through the individual supply lines (610, 620, 630).

The vacuum chamber 100 forms a plurality of compartment chambers according to the number corresponding to each roller member 200. In the example shown in the drawing, three roller members 200 are installed, and the first compartment from the left side. The chamber 110, the second compartment chamber 120, and the third compartment chamber 130 are formed. Although briefly shown for these chambers in the figures, the chambers have substantially a width in the conveying direction or a volume through which deposition objects passing through the chamber can be sufficiently deposited by the process gas and the purge gas.

The vacuum chamber 100 is provided with an airtight means for securing and maintaining a vacuum state while rotatably supporting the shaft at a portion through which the shaft of the rotating unit 300 passes in order to rotate the roller member 200.

The guide formed in the partition means is formed in the form of a slot in which the deposition object (for example, a flexible substrate) can be moved, and the airtight means allows the movement of the deposition object during movement while providing a space between adjacent compartment chambers. It may be made of a seal member capable of maintaining airtightness.

The roller member 200 is preferably formed in a cylindrical or cylindrical shape. In the embodiment shown in the drawings, the roller member 200 is shown to be rotatably supported by the shaft on the rotation unit 300 side, but both ends of the roller member 200 can be rotatably supported. Able to know. Hereinafter, a roller member positioned in the first compartment chamber 110 may be a first roller member, a roller member positioned in the second compartment chamber 120 may be a second roller member, and a roller positioned in the third compartment chamber 130. The member is called a third roller member.

The rotation unit 300 is for rotating the roller member 200 to a predetermined speed and controlling the rotation speed, and includes a rotation driving member such as a motor and rotation control means for controlling the rotation of the rotation driving member. do.

The heater unit is for promoting a reaction between the deposition target and the process gas, and includes a heater 400 (see FIG. 2) and a heater controller (not shown) for controlling the heater 400.

The heater 400 of the heater unit may be integrally formed with the roller member 200. As shown in Figure 2 may be made of a cylindrical heater integrally formed on the outer edge of the roller member 200.

In addition, the heater 400 of the heater unit may be configured as shown in FIG. 3 is a configuration diagram schematically showing a heater unit of another embodiment constituting a roll-to-roll atomic layer deposition apparatus according to the present invention.

As shown in FIG. 3, the heater 400 of the heater unit may be formed integrally with the outer edge of the roller member 200 and may include a plurality of annular heaters disposed at regular intervals.

The process gas providing unit 500 is to provide the process gas required for the process, respectively, into the interior of the vacuum chamber 100 through the individual supply line (610, 620, 630), in Figure 1 the first compartment chamber 110 The first source gas source 510 for providing the first source gas to the side), the purge gas source 520 for providing the purge gas to the second compartment chamber 120, and the third compartment chamber 130 for the first source gas source 510. The example which consists of the 2nd source gas source 530 for providing 2 source gas is shown.

In the individual supply lines 610, 620, 630, the supply line 610 supplies the first source gas from the first source gas source 510 to the first compartment chamber 110 in which the first roller member is located. And a supply line 620 is installed to supply purge gas from the purge gas source 520 to the second compartment chamber 120 in which the second roller member is located, and the supply line 630 is the second source gas source 530. Is supplied to supply a second source gas from the third compartment chamber 130 where the third roller member is located.

Here, each of the individual supply lines 610, 620, 630 further includes an extension line extending into the vacuum chamber 100 parallel to the roller member 200, as shown in FIG. 1. A plurality of gas discharge ports for discharging the process gas to the roller member side is formed.

The extension lines of the individual supply lines 610, 620, 630 may consist of two or more extension lines which are arranged symmetrically around the roller member about the roller member 200.

In this case, it can be fully understood that the arrangement of the two or more extension lines is provided with an arrangement relationship that can secure a movement path through which the deposition object conveyed by the roller member 200 is moved.

Next, operation of the roll-to-roll atomic layer deposition apparatus according to the present invention configured as described above will be described with reference to FIGS. 4 and 5. 4 and 5 are conceptual views for explaining the form in which the process gas is supplied to the roller member in the roll-to-roll atomic layer deposition equipment according to the present invention.

Process gases injected from the process gas providing unit 500 are continuously supplied to respective compartment chambers 110, 120, and 130 of the vacuum chamber 100 through respective individual supply lines 610, 620, and 630, respectively. .

As described above, in the state in which each process gas is supplied to each of the compartment chambers 110, 120, and 130, the roller member 200 is rotated by the driving of the rotating unit 300, and thus the deposition target (for example, For example, the flexible substrate is moved by this roller member 200.

While the deposition object is moved by the roller member 200, the deposition object is passed through the partition chambers 110, 120, and 130 by the process gases supplied to the respective compartment chambers 110, 120, and 130. The thin film is grown by a sequential chemical reaction (pulse / purge / pulse / purge).

At this time, the thickness of the thin film to be grown is determined according to the moving speed of the deposition target to be moved and the amount of gas injected. It can be adjusted by controlling the rotational speed of. In addition, the amount of gas injected may be controlled by the mass flow controller 800 located on the individual supply lines 610, 620, and 630.

The roll-to-roll atomic layer deposition apparatus proposed by the present invention is very simple compared to the conventional roll-to-roll apparatus by guiding the roller path 200 installed in each compartment chamber 110, 120, 130 to the process path as shown in FIG. 1. Can be configured.

As shown in FIG. 2 and FIG. 3, the roller member 200 includes a heater 400 on an outer edge thereof to perform two functions of moving the deposition target and controlling the temperature of the deposition target.

In other words, the roller member 200 not only serves to move the deposition target but also the heater 400 is integrally formed on the roller member 200 to perform a temperature control function for promoting the reaction of the gas of the deposition target. can do. The heater 400 located on the outer edge of the roller member 200 controls the temperature of the deposition object moved by the roller member 200 to promote the reaction.

On the other hand, in the present invention, the individual supply line (610, 620, 630) has an extension line located in parallel to the roller member 200, the roller member 200 inside each compartment chamber through the gas outlet formed therein By providing a process gas to the side) it is possible to grow a thin film of uniform thickness.

In the gas injection device of the conventional atomic layer deposition equipment, the gas injection hole is located in the reaction zone, so that a difference in the amount of gas is generated according to the area inside the chamber, thereby limiting the thin film growth of the uniform thickness of the actual flexible substrate. . The present invention overcomes the disadvantages of the conventional roll-to-roll atomic layer deposition equipment, and injects gas into the compartment chamber through the gas outlet of the extension line in the entire area of each compartment chamber 110, 120, 130. Accordingly, the gas outlet of the extension line is present at a position that interferes with the movement path of the deposition object to minimize the loss of gas.

In other words, as shown in FIGS. 4 and 5, the gas outlets of the extension lines of the individual supply lines 610, 620, and 630 are present at positions where they may interfere with the path on which the deposition object moves. This minimizes the amount of gas lost by providing gas directly to the deposition object. When the extension line is branched and formed in the circumference of the roller member 200, a thin film having the same thickness is grown on the deposition target to be moved by providing gas to the entire surface of the roller member 200 by 360 degrees as shown in FIG. 5. Make it possible.

In the exemplary embodiment shown in the drawing, a cycle of a process is performed in three compartment chambers, and the three compartment chambers include a first compartment chamber (first pulse chamber) 110 and a second compartment chamber ( The example comprised by the purge chamber and the 3rd compartment chamber (2nd pulse chamber) is shown. In each compartment chamber, the reaction of the gas and the deposition object takes place independently.

The pulse process in which the initial first source gas is injected is performed in the first compartment chamber 110. When the first source gas is injected into the first compartment chamber 110, the deposition object (eg, the flexible substrate) that is moved by the roller member 200 in the first compartment chamber 110 may move to the first source gas. It will react with.

Then, the deposition object moved to the second compartment chamber 120 is moved to the third compartment chamber 130 after a process of removing unreacted gas (purge gas) and reaction adducts in the second chamber 120. To react with the second source gas. After reacting with the second source gas in the third compartment chamber 130, the second compartment chamber 120 is moved to the second compartment chamber 120 to remove residual gas, and so on. This four-step process is called a cycle.

Hereinafter, embodiments of a specific thin film growth process through the roll-to-roll atomic layer deposition apparatus according to the present invention will be described.

Example 1: Al ₂ O ₃  Thin film growth

Hereinafter, the growth of the Al ₂ O ₃ thin film through the roll-to-roll atomic layer deposition apparatus according to the present invention.

Al is used as an initial first source gas (source), and trimethylalluminum (TMA) is used as a precursor for growth, and nitrogen is used as a perth gas. As the second source gas (reactant) for growing Al ₂ O ₃ , an atomic layer deposition process is performed using H ₂ O or O ₃ .

TMA for the growth of Al is continuously injected from the first source gas source 510 to the first compartment chamber 110 through the corresponding supply line 610. The nitrogen gas for the purge process is continuously injected from the purge gas source 520 to the second compartment chamber 120 through the corresponding supply line 620, and the second source gas (reaction) is supplied to the third compartment chamber 130. Gas), H ₂ O or O ₃ is continuously injected.

As a result of the continuous injection of the process gases, each compartment chamber 110, 120, 130 creates an atmosphere in which the reaction between the deposition object (flexible substrate) and the process gases may occur.

The deposition object is continuously moved from the first compartment chamber 110 to the second compartment chamber 120 to the third compartment chamber 120 by the roller members 200.

The deposition object that is moved to the first first compartment chamber 110 reacts with the TMA supplied to the first compartment chamber 110. In addition, the deposition object reacted with the TMA passes through a purge process in the second compartment chamber 120, enters the third compartment chamber 130, and reacts with H ₂ O or O _{3 in} the third compartment chamber 130. A thin film of Al ₂ O ₃ is formed.

After the process in the third compartment chamber 130, the deposition target is grown thin film is moved to the second compartment chamber 120 again to remove the residual gas and impurities to perform a purge process. Through this one cycle process, Al ₂ O ₃ dielectric thin film is grown.

Example 2: TiN Metal film  growth

Hereinafter, the growth of the TiN thin film through the roll-to-roll atomic layer deposition apparatus according to the present invention will be described.

TiCl4 is used as a precursor for growth of Ti as an initial first source gas (source), and Ar is used as a purge gas. As the second source gas (reactant) for growing the TiN metal layer, an atomic layer deposition process is performed using NH ₃ , which is a precursor of nitrogen.

TiCl for the growth of Ti is continuously injected from the first source gas source 110 to the first compartment chamber 110 through the corresponding supply line 610. Ar gas for the purge process is continuously injected from the purge gas source 120 to the second compartment chamber 120 through the corresponding supply line 620, and NH _{3, which} is a reaction gas, is injected into the third compartment chamber 130. It is injected continuously.

As a result of the continuous injection of the process gas, each compartment chamber 110, 120, 130 may form an atmosphere in which the reaction between the deposition object and the injection gas may occur.

The deposition object is continuously moved from the first compartment chamber 110 to the second compartment chamber 120 to the third compartment chamber 120 by the roller members 200.

The deposition object moved to the initial first compartment chamber 110 may react with TiCl in the first compartment chamber 110. In addition, the deposition object reacted with TiCl is moved to the second compartment chamber 120, passes through a purge process, and then enters the third compartment chamber 130 to react with NH ₃ inside to form a TiN metal film.

After the process of the third compartment chamber 130 is passed, the deposition target in which the thin film is grown is moved to the second compartment chamber 120 in order to remove residual gas and impurities, thereby performing a purge process. Through this one-cycle process, the growth of TiN metal is possible.

As described above, the roll-to-roll atomic layer deposition apparatus according to the present invention can greatly simplify the configuration of the equipment as compared to the conventional roll-to-roll atomic layer deposition apparatus, and is applied to the entire surface of the deposition object moved by the roller member. It is possible to provide a process gas for the uniformity of the thin film thickness of very high efficiency.

In addition, the present invention can grow the thin film continuously in the process of moving each compartment chamber in which each of the process gases are continuously injected can greatly improve the productivity.

The embodiments and the accompanying drawings described in the present specification are merely illustrative of some of the technical ideas included in the present invention. Accordingly, the embodiments disclosed herein are for the purpose of describing rather than limiting the technical spirit of the present invention, and it is apparent that the scope of the technical idea of the present invention is not limited by these embodiments. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: Vacuum chamber
110, 120, 130: compartment chamber
200: roller member
300: rotating unit
400: heater
500: process gas supply unit
510: first source gas source
520: purge gas source
530: second source gas source
610, 620, 630: individual supply lines
700: Vacuum / exhaust unit
800: mass flow controller

Claims (8)

A vacuum chamber;
Partition means for partitioning the interior of the vacuum chamber into a plurality of parallel partition chambers;
A roller member rotatably installed in each compartment chamber of the vacuum chamber to move the deposition object;
A rotating unit for rotating the roller member;
A heater unit for providing a process temperature required for the vacuum chamber;
A process gas providing unit for providing a process gas for thin film deposition to the vacuum chamber;
A separate supply line for supplying a process gas provided from said process gas providing unit to each compartment chamber; And
A vacuum / exhaust unit for evacuating the inside of the vacuum chamber and exhausting the process gas,
The partition means includes a guide for guiding a deposition object between neighboring compartment chambers and an airtight member for keeping the guide airtight,
The heater unit includes a heater and a heater controller for controlling the heater, and integrally formed with the roller member,
The heater is made of a cylindrical heater formed on the outer edge of the roller member, roll-to-roll atomic layer deposition equipment, characterized in that consisting of a plurality of annular heater disposed at a predetermined interval on the outer edge of the roller member.
The method of claim 1,
The partition means partitions the vacuum chamber into a first compartment chamber, a second compartment chamber and a third compartment chamber;
The process gas providing unit includes a first source gas source, a purge gas source, and a second source gas source,
Wherein the individual supply line comprises a supply line for supplying a first source gas from the first source gas source to the first compartment chamber, a supply line for supplying purge gas from the purge gas source to the second compartment chamber, And a supply line for supplying the second source gas from the second source gas source to the third compartment chamber
Roll-to-roll type atomic layer deposition equipment.
delete delete 3. The method of claim 2,
The supply line further includes an extension line extending into the vacuum chamber parallel to the roller member, wherein the extension line is formed with a plurality of gas outlets for discharging the process gas to the roller member side.
Roll-to-roll type atomic layer deposition equipment.
6. The method of claim 5,
The extension line of the supply line consists of two or more extension lines which are arranged symmetrically around the roller member about the roller member.
Roll-to-roll type atomic layer deposition equipment.
In a roll-to-roll type atomic layer deposition method,
Transferring an object to be deposited through a roller member in a plurality of partitioned chambers partitioned in parallel;
Thin film deposition is sequentially performed on a flow in which deposition targets are transferred by continuously supplying process gases of a source gas and a purge gas, respectively, into corresponding compartment chambers of the plurality of compartment chambers.
Supplying the process gas to the deposition object through an extension line extending in parallel to the roller member in each compartment chamber and having a plurality of gas outlets for discharging the process gas to the roller member;
Roll-to-roll method atomic layer deposition method.
delete

Images