CN105018901B - Film deposition apparatus - Google Patents
Film deposition apparatus Download PDFInfo
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- CN105018901B CN105018901B CN201510208329.1A CN201510208329A CN105018901B CN 105018901 B CN105018901 B CN 105018901B CN 201510208329 A CN201510208329 A CN 201510208329A CN 105018901 B CN105018901 B CN 105018901B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of film deposition apparatus, film deposition apparatus of the invention includes：Gas supply part, it possesses the gas supplying module of at least more than one, a variety of process gas and purge gas of the supply of gas supplying module comprising unstrpped gas and reacting gas, the process gas or the purge gas of residual is exhausted；And substrate support, its supporting substrate, can be possessed relative to the gas supply part in a manner of movement；And the substrate support is performed comprising at least one loopy moving that repeatedly substep advances and substep retreats, in the case where carrying out one loopy moving, the loopy moving distance between the original position of the substrate and final position is more than the length of one gas supplying module.The present invention can be by the setting area and volume minimization of film deposition apparatus, and then maintains the quality of film.
Description
Technical field
The present invention relates to a kind of film deposition apparatus (thin film deposition apparatus), in more detail and
Speech, it is related to a kind of substrate support in the gas supply part and supporting substrate that supply a variety of process gas (process gas)
In the case of relative movement, by the substep of the substrate support it is mobile and can by setting area and volume minimization, and then
Maintain the film deposition apparatus of the quality of film.
Background technology
As to form the sedimentation of film on the substrates such as semiconductor wafer (wafer) (hereinafter referred to as " substrate "),
Use chemical vapour deposition technique (CVD：Chemical Vapor Deposition), atomic layer deposition method (ALD：Atomic
Layer Deposition) etc. technology.
Fig. 8 (a)-(d) is the skeleton diagram for representing the basic conception on the atomic layer deposition method in Film forming method.Ginseng
According to Fig. 8 (a)-(d), the basic conception of atomic layer deposition method is illustrated, atomic layer deposition method is that bag is sprayed on substrate
Containing such as trimethyl aluminium (TMA：TriMethyl Aluminium) raw material unstrpped gas after, by spraying the inertia such as argon (Ar)
Purge gas (inert purge gas) and discharge unreacting substance and make mono layer adsorption to substrate, included in injection
With the raw material react such as ozone (O3) reactant reacting gas after, by spraying inert purge gas and discharge
Unreacting substance/accessory substance and on substrate formed monoatomic layer (Al-O).
Using the conventional film deposition apparatus in atomic layer deposition method according to by unstrpped gas, reacting gas, purging
The various gases such as gas be injected into substrate surface direction and mode and polytype be present, and then can be according to whether being supplied
The relative movement of the gas supply part and substrate of the gas and distinguish.
The substrate support of Fig. 9 expression supporting substrates so-called " scanning (scan) " side of movement relative to gas supply part
The conventional film deposition apparatus 10 of formula.
Substrate 12 is supported by the substrate support 14 of rectilinear movement specific range, is had on the top of the substrate support 14
The standby gas supply part 20 for sequentially supplying a variety of process gas.
However, in film deposition apparatus 10 as described above, in the substrate 12 under the gas supply part 20
In the case of Fang Yidong, moved in a manner of the substrate 12 is not overlapping with the gas supply part 20.That is, described substrate
12 move as follows：Moved in the lower section of the gas supply part 20, by the gas supply part 20 and not with it is described
Gas supply part 20 is overlapping.Therefore, as shown in Figure 9, it is necessary to set respectively in the both sides of the gas supply part 20 do not make it is described
Substrate 12 so-called " headspace S1, the S2 " overlapping with the gas supply part 20.
This headspace makes the internal volume of the film deposition apparatus become big and be filled as the thin film deposition is increased
The principal element for the overall volume put, because the internal volume increases and in the case of the actual deposition film needed for processing procedure gas
The amount of body is consequently increased, so as to turn into the increased principal element of expense.
The content of the invention
[the invention problem to be solved]
In order to solve problem points as described above, supplied it is an object of the invention to provide one kind with substrate and gas
The relative movement in portion and in the case of deposition film, by the substep of the substrate and gas supply part relatively move and can will in
Portion's volume minimization, reduce the film deposition apparatus of setting area.
In addition, it is an object of the invention to provide a kind of relative movement by the substrate and gas supply part, can carry
The film deposition apparatus of the quality of the high film.
In addition, repeat substrate shifting relative with the substep of gas supply part it is an object of the invention to provide a kind of
Move and can prevent foreign matter from invading the film deposition apparatus of the film.
[means to solve the problem]
The purpose of the present invention as described above is reached by film deposition apparatus, and the film deposition apparatus includes：
Gas supply part, it possesses the gas supplying module of at least more than one, and the gas supplying module supply includes unstrpped gas
With a variety of process gas and purge gas of reacting gas, the process gas or the purge gas of residual are arranged
Gas；And substrate support, its supporting substrate, and by relative to the gas supply part it is moveable in a manner of possessed；It is and described
Substrate support performs at least one circulation (loop) movement retreated comprising multiple substep advance and substep, is carrying out described one
In the case of individual loopy moving, the loopy moving distance between the original position of the substrate and final position is one gas
It is more than the length of body supplying module.
Herein, the substep backway of the substrate support progress substep retrogressing is set smaller than the substrate
Supporting part carries out the substep forward travel distance of the substep advance.
And then the substep forward travel distance is 0.1mm to 15mm, the substep backway is set smaller than the substep
Forward travel distance.
On the other hand, in the case where performing n (n >=2) described loopy moving, the substrate can be from (m-1) (2≤m
≤ n) loopy moving original position from final position to the m loopy movings move linearly.At this moment, the m circulations move
Dynamic original position can original position identical with the original position of (m-1) loopy moving or the m loopy movings
The original position movement of (m-1) loopy moving is with displacement (shift) apart from identical distance.In that case,
It is different that the shift length can perform the substep forward travel distance that substep advances from the substrate support.
On the other hand, in the case where performing n (n >=2) described loopy moving, the substrate can be by including multiple point
The substep movement that step is advanced and substep retreats, is circulated from the final position of (m-1) (2≤m≤n) loopy moving to the m
Mobile original position movement.At this moment, the original position of the m loopy movings can be with (m-1) loopy moving most
First position is identical or the original position movement of original position (m-1) loopy moving of the m loopy movings and position
Move apart from identical distance.In that case, the shift length can perform point that substep advances with the substrate support
It is different to walk forward travel distance.
In addition, the length for possessing the gas supply part of at least one gas supplying module can be the substrate
It is more than diameter.
[invention effect]
According to the present invention formed as described above, in the relative movement with the substrate and gas supply part
In the case of deposition film, relatively moved, the circulation of the substrate can be moved by the substep of the substrate and gas supply part
Dynamic distance minimization is into distance more than a gas supplying module of the gas supply part, so as to by the thin film deposition
The internal volume of device minimizes.Thus, the setting area of the film deposition apparatus is can obviously reduce, passes through the inner bulk
Long-pending reduction, the amount of required process gas in the case of the substrate deposition film can be also reduced, so as to reduce expense.
In addition, according to the present invention, repeat in the substrate and gas supply part comprising the relative movement of multiple substeps
In the case of loopy moving, it can prevent foreign matter from being invaded along the film layer by making the original position displacement of the loopy moving
Enter.
Brief description of the drawings
Fig. 1 is the skeleton diagram for representing sequentially to supply a gas supplying module of a variety of process gas.
Fig. 2 is the skeleton diagram for representing to possess the gas supply part of multiple described Fig. 1 gas supplying module.
Fig. 3 is the skeleton diagram for representing the process that the substrate carries out substep movement according to an embodiment and advanced.
Fig. 4 is the skeleton diagram for representing the process that the substrate carries out substep movement and retreated.
Fig. 5 is the concept map for the film layer for representing the process formation by described Fig. 3.
Fig. 6 is the skeleton diagram for representing the process that the substrate carries out substep movement according to another embodiment and advanced.
Fig. 7 is the concept map for the film layer for representing the process formation by described Fig. 6.
Fig. 8 (a)-(d) is the skeleton diagram for the basic conception for representing atomic layer deposition method.
Fig. 9 is the skeleton diagram for the composition for representing conventional film deposition apparatus.
Embodiment
Hereinafter, referring to the drawings, a preferred embodiment of the present invention is illustrated in detail.It is however, of the invention and unlimited
Due to embodiment described herein, other forms can be embodied as.The embodiment introduced herein is to make on the contrary
Disclosed content becomes thorough and complete and fully those skilled in the art can be passed on the thought of the present invention and carried
For.In entire description, identical reference marks represents identical inscape.
Fig. 1 represents that the gas supply part 120 (reference picture 2) of the film deposition apparatus in the present invention possesses at least more than one
A gas supplying module 120.
Reference picture 1, single gas supplying module 120 are formed as follows：Supply includes unstrpped gas (the first processing procedure
Gas) with a variety of process gas and purge gas of reacting gas (the second process gas), the process gas to residual or
Purge gas is exhausted.
Specifically, the gas supplying module 120 can possess：First gas supply mouth 124, its base feed gas；
Second gas supply mouth 128, its supply response gas；And purge gas supply mouth 122,126, its grade supply purge gas.Institute
Stating purge gas supply mouth 122,126 can possess multiple, can possess and be supplied in the first gas supply mouth 124 and second gas
At least either side between mouth 128 or in the first gas supply mouth 124 and second gas supply mouth 128.It is in addition, described
Gas supplying module 120 can possess exhaust gas outlet 150, and the exhaust gas outlet 150 possesses respectively to be chatted above
Between the first gas supply mouth 124, second gas supply mouth 128 and the purge gas supply mouth 122,126 stated.The row
Gas gas discharge outlet 150 is by being evacuated the connection (not shown) of (pumping) portion, to the outside process gas or purging for discharging residual
Gas.As shown in figure 1, with a distance of the gas supplying module 120 with " D " formed as described above.Therefore, institute is worked as
When stating gas supplying module 120 and substrate and moving relative to each other, sequentially to the substrate supply purge gas, unstrpped gas and
Reacting gas, so as to form film on the top of the substrate by atomic layer deposition method.
Fig. 2 represents that the gas for possessing described gas supplying module 120A, 120B, 120C, the 120D of at least more than one supplies
To portion 120 and substrate 12.Though not illustrated in Fig. 2, the substrate 12 can be by with can be relative with the gas supply part 1200
Mobile mode possessed substrate support support.Hereinafter, illustrate to possess as follows：The gas supply part 120
Fixed, the substrate support substrate 12 of bottom can move relative to the gas supply part 1200.
Reference picture 2, gas supply part 1200 can possess the gas supplying module of at least more than one.Scheme in fig. 2
Show possess four gas supplying modules 120A, 120B, 120C, 120D gas supply part 1200, but the situation is only one, can
Suitably adjust the number of a possessed gas supplying module of gas supply part 1200.
However, in the present invention, such as can possess as follows：The gas supply part 1200 is fixed, the base
Plate 12 can move relative to the gas supply part 1200.In that case, thin film deposition is entered to the top of the substrate 12
And in order to which the displacement of the substrate 12 is minimized, can be by the gas for possessing at least one gas supplying module
The length of supply unit 1200 is set as more than the diameter Ds of the substrate 12.That is, the length of the gas supply part 1200 is set
It is set to more than the diameter of the substrate 12, in the case of being moved in the substrate 12, the substrate 12 will not be to institute
The both sides for stating gas supply part 1200 protrude.Thus, it is reserved without being set such as conventional device in the both sides of gas supply part
Space, and not only may achieve the slimming of film deposition apparatus, and may achieve the minimum of internal volume.
On the other hand, in the present invention, the substrate 12 can utilize the substrate support to perform comprising before multiple substep
At least one loopy moving for entering and retreating step by step.Fig. 3 is to represent that the substrate 12 performs the process of a loopy moving
Skeleton diagram.
Reference picture 3, film can be formed on the substrate 12 by the loopy moving, can be according to formation in the base
The thickness of the film of plate 12 and set the number of the loopy moving.Now, in the case where carrying out one loopy moving,
Loopy moving distance L between the original position of the substrate 12 and final position may be set to one gas supplying module
It is more than 120 distance.
In the case where the substrate 12 completes a loopy moving, when starting the loopy moving, the substrate 12
Original position (t0 position) and the distance between final position (t17 position), i.e. loopy moving distance L may be set to gas
1200 possessed of body supply unit, one gas supplying module 120A more than distance D.If the loopy moving distance L settings
For the distance D less than gas supply part 1200 possessed, one gas supplying module 1200, then even if being followed completing one
, also will not be at least one of the substrate base feed gas or reacting gas in the case that ring moves.This situation can
Cause to produce in the substrate 12 and do not form the region of film.Therefore, the loopy moving distance L may be set to the gas confession
To more than the distance D of the one gas supplying module 1200 of possessed of portion 1200, so as not to which not shape can be produced in the substrate 12
Into the region of film.
Reference picture 3, the substrate 12 are moved by repeating in a manner of repeatedly substep advance and substep retreat.Herein,
" advance " may be defined as the direction that the substrate 12 is wanted to move relative to the gas supply part 1200, " retrogressing "
It may be defined as the opposite direction of the direction of advance.In figure 3, the substrate 12 wants the right side movement to figure, therefore in Fig. 3
Middle right direction is set as direction of advance, and its opposite direction is set as direction of retreat.The advance and direction of retreat are according to institute
State substrate to want mobile direction and set, therefore be not fixed as some direction to define.
The substrate 12 (t0) when starting a loopy moving is located at original position, hereafter repeats point of repeatability
Step is advanced (t1, t3, t5, t7, t9, t11, t13, t15, t17) and substep retreats (t2, t4, t6, t8, t10, t12, t14, t16)
And complete a loopy moving.In that case, moved before the substrate should finally be carried out and then to desired direction, because
The substep backway Lb that this described substrate support carries out the substep retrogressing is set smaller than the substrate support and carried out
The substep forward travel distance Lf that the substep advances.
The substrate 12 from the original position according to substep forward travel distance Lf degree carry out first substep advance (t1) and
L2 position is reached, the first substep retrogressing (t2) is carried out then according to substep backway Lb degree and reaches L1 position.
Then, repeat the repeatedly substep to advance and retreat step by step, until the substrate 12 moves from original position
Untill the distance for being approximately equivalent to loopy moving distance L.For example, by arrived separately at before the substep L3 (t3), L4 (t5),
L5 (t7), L6 (t9), L7 (t11), L8 (t13), L9 (t15), L10 (t17) position, by being arrived respectively before the substep
Up to L2 (t4), L3 (t6), L4 (t8), L5 (t10), L6 (t12), L7 (t14), L8 (t16) position.
In that case, the substep forward travel distance such as substantially 0.1mm to 15mm, the substep backway can
It is set smaller than the substep forward travel distance.For example, the substep backway may be set to the big of the substep forward travel distance
Cause half.On the other hand, according to the experiment of the present inventor, following situation is found：If the substep forward travel distance is set as greatly
In 15mm, then form the quality decline of striped and film in the film for depositing to substrate 12；If on the contrary, before the substep
Enter distance and be set smaller than 0.1mm, then, can be because of " the tunnel of top and the bottom layer in the case where substrate 12 deposits multiple layers
(tunneling) " effect and the foreign matter outside film is easily invaded." tunnel " phenomenon is said in detail afterwards
It is bright.Therefore, in the present embodiment, the substep forward travel distance can for example be approximately set to 0.1mm to 15mm.
On the other hand, the substrate support can be set according to the thickness for the film for wanting to deposit to the substrate 12
The substep forward travel distance Lf, the substep advance number and the loopy moving number.Therefore, deposition is wanted in setting
To the film of the substrate 12 thickness in the case of, can suitably set the substrate substep forward travel distance Lf, described point
Walk the number of advance number and the loopy moving.
On the other hand, performing repeatedly the loopy moving, performing n (n >=2, n are integer) described loopy moving
In the case of, the substrate in (m-1) (2≤m≤n, m the are integer) loopy moving continuously performed and m loopy movings
Action it is as follows.That is, in the case where performing the n loopy moving, integer " m " is to define the multiple loopy moving
In individual other m loopy movings and use.
In the present embodiment, the substrate is from the final position of (m-1) loopy moving to the initial of m loopy movings
In the case that position is moved, it can be moved in a manner of linear motion.
For example, it is assumed that the value of " n " repeats the situation of 2 loopy movings for the situation of " 2 ", i.e. hypothesis.
In that case, the value of " m " is 2.In the case where the value of " m " is " 2 ", (m-1) loopy moving is equivalent to first
Loopy moving, i.e. initial loopy moving, m loopy movings move equivalent to second circulation, are circulated equivalent to after (m-1)
The mobile loopy moving performed afterwards.And then when assuming that loopy moving shown in Fig. 3 moves for first circulation, described the
In one loopy moving, position of the final position equivalent to " t17 " of the substrate 12.In that case, in order to be connect down
The second circulation movement come, the original position P that the substrate 12 can move to second circulation1It is mobile.As described above, from first
In the case of the original position movement that the final position of loopy moving is moved to second circulation, the substrate can as shown in Figure 3 as
Moved in a manner of rectilinear movement.This is in order that the substrate is promptly mobile and fast to the original position of second circulation movement
Speed performs follow-up loopy moving.
However, as described above, the substrate is set to be followed from the final position of (m-1) loopy moving to ensuing m
In the case of the original position movement that ring moves, it can be allowed to by the substep movement advanced comprising multiple substep and retreated step by step
It is mobile.This is in order to realize continuous loopy moving in the case of moving the substrate, also arrive thin film deposition
The substrate, thus perform more effective thin film deposition.Therefore, in the case where performing n (n >=2) described loopy moving, institute
Stating substrate can be mobile and from (m-1) (2≤m≤n) loopy moving by the substep to advance comprising multiple substep and substep retreats
Original position from final position to the m loopy movings move.
For example, Fig. 4 represents make the substrate move from the final position that first circulation moves to ensuing second circulation
In the case of dynamic original position movement, by advancing (b1, b3, b5, b7, b9, b11, b13, b15, b17) comprising multiple substep
And substep retreats the substep movement of (b2, b4, b6, b8, b10, b12, b14, b16) and is allowed to mobile skeleton diagram.For described
The explanation that Fig. 4 is carried out is similar to described Fig. 3 explanation, therefore the repetitive description thereof will be omitted.Wherein, left side is defined as in Fig. 4
Direction of advance, its opposite direction is defined as direction of retreat.Therefore, in Fig. 4 " b0 " position is original position.
However, in described Fig. 3 and Fig. 4, it is assumed that the original position of the m loopy movings circulates with (m-1)
Mobile original position identical situation and illustrate.That is, it is set as the original position and second circulation of first circulation movement
Mobile original position is identical.In that case, such as Fig. 5 form can be had by depositing to the film of the substrate 12.Fig. 5 is
Expression is formed at the skeleton diagram of the sectional side view form of the film on the top of substrate 12.
Reference picture 5, such as in the case where performing 2 loopy movings, as shown in Figure 5 as the substrate 12 top shape
Into first layer 130 and the second layer 140.Film layer is formed in the substrate with the substep movement of the substrate, therefore is formed
To the substrate film it is as shown in Figure 5 as deposited step by step in a manner of the surface parallel to substrate.
At this moment, the original position of the first circulation movement and second circulation movement becomes identical, therefore deposits to described
The substep center side wall 132 of the first layer 130 of substrate 12 is formed approximately at always with the substep center side wall 142 of the second layer 140
On line.In that case, because of so-called " tunnel (tunneling) " phenomenon and foreign matter 110 can along the first layer 130 point
The substep center side wall 142 of step center side wall 132 and the second layer 140 invades the inside of film.The situation can cause film
Quality decline, therefore another embodiment for solving problem points as described above is illustrated below.
Fig. 6 is the skeleton diagram of the loopy moving for the substrate for representing another embodiment.Compared with described Fig. 3 loopy moving,
The loopy moving of the present embodiment has differences at following aspect：The original position (m-1) of the m loopy movings is followed
The original position movement about shift length of ring movement.Hereinafter, illustrated centered on discrepancy.
Reference picture 6, such as in substrate from the final position at the time point (t17) of first circulation mobile end to second circulation
In the case of mobile original position movement, the original position P of the second circulation movement2It is mobile to be moved away from the first circulation
Original position be shift length d degree.In that case, the shift length d is set as and the substep forward travel distance
Lf is different, such as may be set to smaller.Its reason is if the shift length d is identical with the substep forward travel distance Lf,
Described " tunnel " phenomenon can not so be prevented.
That is, second circulation move start when, with the first circulation move start when compared with, the substrate is from separating position
The position for moving distance d degree starts to move.As described above, in the case where repeating each loopy moving, if making each circulation
Mobile original position separates about shift length, then can prevent the foreign matter from invading.
Fig. 7 represents to perform 2 loopy movings by described Fig. 6 method to form first layer on the top of the substrate 12
130 and the situation of the second layer 140.In that case, as described above as first circulation movement with second circulation move it is initial
Position separates about shift length, therefore deposits to the substep center side wall 132 and the second layer of the first layer 130 of the substrate 12
140 substep center side wall 142 is inconsistent each other, and is arranged in a manner of staggering.Therefore, will not produce illustrated in Figure 5
" tunnel " phenomenon, so as to prevent outside foreign matter intrusion.
Described Fig. 6 method can be applied to following situation：From the described of (m-1) (2≤m≤n) loopy moving such as Fig. 3
The situation that the final position of substrate moves linearly to the original position of the substrate of the m loopy movings；Or by comprising
The situation that the substep that repeatedly substep advances and substep retreats is mobile and moves.
This specification is illustrated with reference to a preferred embodiment of the present invention, but this area skill in relevant art field
Art personnel can implement various amendments and change to the present invention in the range of the thought of the present invention and region is not departed from.Therefore, such as
Implementation of the fruit through deformation basically comprises the inscape of the present invention, then is considered as being all contained in the technology category of the present invention.
[industrial applicability]
According to the present invention, in the case of deposition film, pass through institute in the relative movement with substrate and gas supply part
The substep for stating substrate and gas supply part relatively moves, and can supply the loopy moving distance minimization of the substrate into the gas
To distance more than a gas supplying module in portion, so as to which the internal volume of the film deposition apparatus be minimized.Thus,
The setting area of the film deposition apparatus is can significantly reduce, by the reduction of the internal volume, can also be reduced described
The amount of process gas needed in the case of substrate deposition film, so as to reduce expense.
In addition, according to the present invention, repeat in the substrate and gas supply part comprising the relative movement of multiple substeps
In the case of loopy moving, it can prevent foreign matter from being invaded along the film layer by making the original position displacement of the loopy moving
Enter.
Claims (11)
1. a kind of film deposition apparatus, it is characterised in that include：
Gas supply part, it possesses at least one gas supplying module, and the gas supplying module supply includes unstrpped gas
With a variety of process gas and purge gas of reacting gas, the process gas or the purge gas of residual are arranged
Gas；And
Substrate support, its supporting substrate, and by relative to the gas supply part it is moveable in a manner of possessed；And
The substrate support is performed comprising at least one loopy moving that repeatedly substep advances and substep retreats, the substrate
The substep backway that supporting part carries out the substep retrogressing is less than the substep that the substrate support carries out the substep advance
Forward travel distance, in the case where carrying out at least one loopy moving, the original position and final position of the substrate it
Between loopy moving distance at least one gas supplying module length more than.
2. film deposition apparatus according to claim 1, it is characterised in that：
The substep forward travel distance is 0.1mm to 15mm, and the substep backway is less than the substep forward travel distance.
3. film deposition apparatus according to claim 1, it is characterised in that：
In the case where performing the n loopy moving,
Original position rectilinear movement of the substrate from the final position of the m-1 times loopy moving to the m times loopy moving, its
Middle n >=2 and 2≤m≤n.
4. film deposition apparatus according to claim 3, it is characterised in that：
The original position of the m times loopy moving is identical with the original position of the m-1 times loopy moving.
5. film deposition apparatus according to claim 3, it is characterised in that：
The original position movement of original position the m-1 times loopy moving of the m times loopy moving and shift length
Identical distance.
6. film deposition apparatus according to claim 5, it is characterised in that：
The substep forward travel distance that the shift length performs substep advance from the substrate support is different.
7. film deposition apparatus according to claim 1, it is characterised in that：
In the case where performing the n loopy moving,
The substrate by the substep to advance comprising multiple substep and substep retreats it is mobile and from the m-1 times loopy moving most
Final position is put to the original position of the m times loopy moving and moved, wherein n >=2 and 2≤m≤n.
8. film deposition apparatus according to claim 7, it is characterised in that：
The original position of the m times loopy moving is identical with the original position of the m-1 times loopy moving.
9. film deposition apparatus according to claim 7, it is characterised in that：
The original position movement of original position the m-1 times loopy moving of the m times loopy moving and shift length
Identical distance.
10. film deposition apparatus according to claim 9, it is characterised in that：
The substep forward travel distance that the shift length performs substep advance from the substrate support is different.
11. film deposition apparatus according to claim 1, it is characterised in that：
The length for possessing the gas supply part of at least one gas supplying module is more than the diameter of the substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0053197 | 2014-05-02 | ||
| KR1020140053197A KR101533610B1 (en) | 2014-05-02 | 2014-05-02 | Thin film deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105018901A CN105018901A (en) | 2015-11-04 |
| CN105018901B true CN105018901B (en) | 2017-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520265380.1U Withdrawn - After Issue CN204714899U (en) | 2014-05-02 | 2015-04-28 | Film deposition apparatus |
| CN201510208329.1A Active CN105018901B (en) | 2014-05-02 | 2015-04-28 | Film deposition apparatus |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520265380.1U Withdrawn - After Issue CN204714899U (en) | 2014-05-02 | 2015-04-28 | Film deposition apparatus |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101533610B1 (en) |
| CN (2) | CN204714899U (en) |
| TW (1) | TWI561673B (en) |
| WO (1) | WO2015167114A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101533610B1 (en) * | 2014-05-02 | 2015-07-06 | 주식회사 테스 | Thin film deposition apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080035735A (en) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | Equipment for plasma enhanced chemical vapor deposition |
| KR20100023330A (en) * | 2008-08-21 | 2010-03-04 | 에이피시스템 주식회사 | Substrate processing system and method |
| KR101099191B1 (en) * | 2008-08-13 | 2011-12-27 | 시너스 테크놀리지, 인코포레이티드 | Vapor deposition reactor and method for forming thin film using the same |
| CN102549194A (en) * | 2009-10-05 | 2012-07-04 | 株式会社岛津制作所 | Surface-wave plasma cvd device and film-forming method |
| KR101347046B1 (en) * | 2013-02-04 | 2014-01-06 | 주식회사 테스 | Thin film deposition apparatus |
| CN204714899U (en) * | 2014-05-02 | 2015-10-21 | Tes股份有限公司 | Film deposition apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8771791B2 (en) * | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
| US20120225191A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
-
2014
- 2014-05-02 KR KR1020140053197A patent/KR101533610B1/en active IP Right Grant
-
2015
- 2015-02-05 WO PCT/KR2015/001179 patent/WO2015167114A1/en active Application Filing
- 2015-04-28 CN CN201520265380.1U patent/CN204714899U/en not_active Withdrawn - After Issue
- 2015-04-28 CN CN201510208329.1A patent/CN105018901B/en active Active
- 2015-04-30 TW TW104113808A patent/TWI561673B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080035735A (en) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | Equipment for plasma enhanced chemical vapor deposition |
| KR101099191B1 (en) * | 2008-08-13 | 2011-12-27 | 시너스 테크놀리지, 인코포레이티드 | Vapor deposition reactor and method for forming thin film using the same |
| KR20100023330A (en) * | 2008-08-21 | 2010-03-04 | 에이피시스템 주식회사 | Substrate processing system and method |
| CN102549194A (en) * | 2009-10-05 | 2012-07-04 | 株式会社岛津制作所 | Surface-wave plasma cvd device and film-forming method |
| KR101347046B1 (en) * | 2013-02-04 | 2014-01-06 | 주식회사 테스 | Thin film deposition apparatus |
| CN204714899U (en) * | 2014-05-02 | 2015-10-21 | Tes股份有限公司 | Film deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI561673B (en) | 2016-12-11 |
| KR101533610B1 (en) | 2015-07-06 |
| CN105018901A (en) | 2015-11-04 |
| CN204714899U (en) | 2015-10-21 |
| TW201542869A (en) | 2015-11-16 |
| WO2015167114A1 (en) | 2015-11-05 |
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