WO2015151676A1 - 基板処理システム - Google Patents
基板処理システム Download PDFInfo
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- WO2015151676A1 WO2015151676A1 PCT/JP2015/055818 JP2015055818W WO2015151676A1 WO 2015151676 A1 WO2015151676 A1 WO 2015151676A1 JP 2015055818 W JP2015055818 W JP 2015055818W WO 2015151676 A1 WO2015151676 A1 WO 2015151676A1
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- processing chamber
- chamber
- processing
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- processing system
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 230000007246 mechanism Effects 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 20
- 230000007723 transport mechanism Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 134
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Definitions
- the present invention relates to a substrate processing system that performs predetermined processing on a plurality of substrates.
- a so-called ALD (Atomic Layer Deposition) or MLD (Molecular Layer Deposition) process that performs film formation on a wafer is, for example, a batch process that processes multiple wafers in a processing chamber that is evacuated to a vacuum. Done in the system.
- this batch processing system 200 places a plurality of wafers W concentrically in order to improve the in-plane uniformity of each wafer processing and the uniformity of processing between wafers W.
- a circular mounting table 210 and a cylindrical processing chamber 211 that accommodates the mounting table 210 are provided.
- the processing chamber 211 is provided with a vacuum transfer chamber 212 adjacent thereto, and a wafer W accommodated in a cassette C of a cassette station 201 arranged on the atmosphere side is transferred to a transfer arm 213 arranged on the atmosphere side and a vacuum transfer.
- the sample is transferred into the processing chamber 211 by the transfer arm 215 provided in the vacuum transfer chamber 212 through the load lock chamber 214 adjacent to the chamber 212.
- a space A in which the wafer W is not mounted is formed in the center thereof as shown by a broken line in the processing chamber 211 of FIG.
- the space A gradually increases as the number of wafers W placed on the mounting table 210, in other words, the number of wafers W accommodated in the processing chamber 211 increases. Therefore, in the processing chamber 211 for processing wafers W placed concentrically as shown in FIG. 13, the volume of the processing chamber 211 required for processing per wafer W increases as the number of wafers W processed increases. (Hereinafter, this volume may be referred to as “necessary processing volume”).
- the number of wafers W processed in the processing chamber 211 is set to about six, and the processing chamber 211 configured as such is vacuum-transferred.
- a plurality of units are provided adjacent to the chamber 212.
- the vacuum transfer chamber 212 itself becomes large, and a problem arises that the footprint of the batch processing system 200 as a whole increases.
- the present invention has been made in view of the above points, and in a substrate processing system that performs a predetermined process on a plurality of substrates, an increase in the volume of the processing chamber accompanying an increase in the number of wafers W processed in the processing chamber.
- the aim is to minimize.
- the present invention provides an annular processing chamber for storing a plurality of substrates, a cassette mounting portion for mounting a cassette for storing a plurality of substrates, the processing chamber, and the cassette.
- a substrate transport mechanism for transporting the substrate to and from the mounting unit, and the plurality of substrates are concentrically arranged in the processing chamber in plan view.
- the processing chamber since the processing chamber is formed in an annular shape and the substrates are arranged concentrically in the processing chamber, in the conventional cylindrical processing chamber, the processing chamber gradually increases as the number of substrates accommodated increases. The space A described above does not occur. Therefore, even if the number of substrates processed in the processing chamber is increased, the increase in the volume of the processing chamber can be minimized.
- an increase in the volume of the processing chamber accompanying an increase in the number of wafers processed in the processing chamber can be minimized.
- FIG. 1 is a plan view showing an outline of the configuration of a wafer processing system 1 as a substrate processing system according to the present embodiment.
- FIG. 2 is a longitudinal sectional view showing an outline of the configuration of the wafer processing system 1 according to the present embodiment. Note that, as the wafer W of the present embodiment, for example, a semiconductor wafer is used, and the wafer processing system 1 will be described by taking as an example a case where so-called ALD is performed in which film formation processing is performed on the wafer.
- ALD atomic layer deposition
- the wafer processing system 1 includes a cassette station 2 that carries a plurality of wafers W in a cassette unit, a processing station 3 that processes a plurality of wafers W in a batch manner, and a wafer W in the processing station 3. And a control device 4 for controlling the above processes.
- the cassette station 2 and the processing station 3 are integrally connected via a load lock chamber 5.
- the cassette station 2 includes a cassette placement unit 10 and a transfer chamber 11 provided adjacent to the cassette placement unit 10.
- a plurality of, for example, three cassettes C that can accommodate a plurality of wafers W can be placed side by side in the X direction (left and right direction in FIG. 1).
- a wafer transfer arm 12 is provided in the transfer chamber 11.
- the wafer transfer arm 12 is movable in the vertical direction, the horizontal direction, and the vertical axis ( ⁇ direction), and can transfer the wafer W between the cassette C of the cassette mounting unit 10 and the load lock chamber 5.
- FIG. 1 depicts a state in which one wafer transfer arm 12 is arranged in the transfer chamber 11, the arrangement and the number of wafer transfer arms 12 are not limited to the contents of the present embodiment. It can be set arbitrarily.
- the processing station 3 includes a substantially annular processing chamber 20 that batch-processes a plurality of wafers W, and a vacuum provided adjacent to the processing chamber 20 in an inner space surrounded by the annular processing chamber 20.
- a transfer chamber 21 is provided.
- the width S of the cross section of the processing chamber 20 is configured to be larger than the diameter of the wafer W so that the wafer W can be accommodated horizontally.
- a mounting table 22 for mounting a plurality of wafers W is provided inside the processing chamber 20, a mounting table 22 for mounting a plurality of wafers W is provided.
- the cross section of the processing chamber 20 is drawn in a rectangular shape.
- the cross section of the processing chamber 20 can be used as long as the annular mounting table 22 can be disposed inside the processing chamber 20. It is not limited to the contents of, but can be set arbitrarily.
- the mounting table 22 is formed in an annular shape like the processing chamber 20, and is arranged concentrically with the processing chamber 20.
- a plurality of wafers W are arranged on the same circumference along the circumferential direction of the mounting table 22.
- FIG. 1 for example, a state in which 14 wafers W are mounted on the mounting table 22 is illustrated.
- the number of wafers W and the size of the mounting table 22 can be arbitrarily set. is there.
- a lower surface of the mounting table 22 is provided with a drive mechanism 23 that rotates the mounting table 22 in the horizontal direction about the central axis of the mounting table 22 as a rotation axis.
- the drive mechanism 23 is composed of, for example, a rotatable roller.
- the mounting table 22 incorporates lifting pins (not shown) so that the wafer W can be transferred to and from a wafer transfer mechanism 40 described later.
- an exhaust mechanism 24 is connected to the processing chamber 20 via an exhaust pipe 25, and the inside of the process chamber 20 can be decompressed.
- the exhaust pipe 25 is provided with an adjustment valve 26 that adjusts the exhaust amount by the exhaust mechanism 24.
- the gate valve 27 is closed in a normal state, and the wafer W can be transferred between the vacuum transfer chamber 21 and the processing chamber 20 by opening the gate valve 27.
- FIG. 3 a state in which the gate valves 27 are provided at three equal intervals is illustrated, but the arrangement and the number of the gate valves 27 can be arbitrarily set.
- FIG. 3 a state in which the gate valves 27 are provided at three equal intervals is illustrated, but the arrangement and the number of the gate valves 27 can be arbitrarily set.
- a gas supply mechanism 30 for supplying a predetermined processing gas into the processing chamber 20 is connected to the ceiling surface of the processing chamber 20 via a gas supply pipe 31, for example.
- the gas supply pipe 31 is provided with a flow rate adjusting mechanism 32 for adjusting the supply amount of the processing gas.
- FIG. 2 for example, a state where the gas supply pipe 31 is connected to only one place on the ceiling surface of the processing chamber 20 is illustrated.
- the processing gas is uniformly supplied into the processing chamber 20, From the viewpoint of performing wafer processing, it is preferable to provide gas supply pipes 31 at a plurality of locations in the processing chamber 20 as in the case of the exhaust pipe 25.
- connection location of the gas supply pipe 31 is not limited to the ceiling surface of the processing chamber 20, and may be the side surface of the processing chamber 20.
- a plasma source for introducing plasma for assisting film formation on the wafer W into the processing chamber 20 may be disposed on the upper surface or side surface of the processing chamber 20. Therefore, the arrangement of devices outside the processing chamber 20 can be arbitrarily set according to the contents of processing performed in the wafer processing system 1.
- the load lock chamber 5 is disposed below the processing chamber 20, for example, as shown in FIG. In other words, it is disposed across the lower portion of the processing chamber 20 in plan view.
- the load lock chamber 5 connects the vacuum transfer chamber 21 and the transfer chamber 11.
- a gate valve (not shown) is provided between the load lock chamber 5 and the transfer chamber 11 and between the load lock chamber 5 and the vacuum transfer chamber 21, and the gate valve is opened when the wafer W is transferred. By operating, the wafer W can pass through the load lock chamber 5.
- the vacuum transfer chamber 21 has an upper portion connected to the processing chamber 20 via a gate valve 27 and a lower portion connected to the load lock chamber 5 via a gate valve (not shown). Therefore, the vacuum transfer chamber 21 extends downward from, for example, the bottom surface of the processing chamber 20, and the bottom surface is configured to have a height that is approximately the same as the bottom surface of the load lock chamber 5.
- 2 illustrates a state in which the load lock chamber 5 is provided below the processing chamber 20, but the load lock chamber 5 is provided above the processing chamber 20, for example, as shown in FIG. May be. In other words, the load lock chamber 5 may be disposed across the processing chamber 20 in plan view.
- an exhaust mechanism (not shown) is connected to the vacuum transfer chamber 21, and the inside can be decompressed by this exhaust mechanism.
- a wafer transfer mechanism 40 that transfers the wafer W between the load lock chamber 5 and the processing chamber 20 is provided.
- the wafer transfer mechanism 40 includes a plurality of articulated transfer arms 41 that can rotate and extend.
- Each transfer arm 41 is supported, for example, by a support member 42 that extends in the vertical direction at the center of the vacuum transfer chamber 21. Further, each transfer arm 41 is configured to be movable up and down along the support member 42 by an elevator mechanism (not shown), and can transfer the wafer W between the load lock chamber 5 and the processing chamber 20.
- an elevator mechanism not shown
- FIG. 1 for example, a state in which three transfer arms 41 are provided is illustrated, but the number of transfer arms 41 can be arbitrarily set.
- the configuration of the wafer transfer mechanism 40 is not limited to the contents of the present embodiment, and any structure or format can be used as long as the wafer W can be transferred between the load lock chamber 5 and the processing chamber 20. Can be set arbitrarily.
- the control device 4 is a computer, for example, and has a program storage unit (not shown).
- the program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1.
- the program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. Or installed in the control device 4 from the storage medium.
- a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card.
- the wafer processing system 1 according to the present embodiment is configured as described above. Next, wafer processing performed in the wafer processing system 1 will be described.
- a plurality of unprocessed wafers W are taken out from the cassette C of the cassette station 2 by the wafer transfer arm 12 and sequentially transferred into the load lock chamber 5. Thereafter, the inside of the load lock chamber 5 is evacuated, and the inside is reduced to a predetermined pressure.
- a gate valve (not shown) between the load lock chamber 5 and the vacuum transfer chamber 21 whose interior is previously maintained in a reduced pressure state is opened, and the wafer W in the load lock chamber 5 is transferred to the wafer transfer mechanism.
- the 40 transfer arms 41 sequentially carry in the processing chamber 20 that has been previously maintained in a reduced pressure state via the vacuum transfer chamber 21.
- the wafers W transferred into the processing chamber 20 are sequentially mounted on the mounting table 22 via lifting pins (not shown).
- the gate valve 27 is closed, and the processing of the wafers W is executed by the control device 4.
- the inside of the processing chamber 20 is depressurized to a predetermined pressure by the exhaust mechanism 24.
- the exhaust is quickly performed. That is, in the conventional cylindrical processing chamber 211, it is necessary to exhaust the space A in FIG.
- the space A increases as the number of wafers W arranged in the processing chamber 211 increases.
- the processing chamber 211 required for processing per wafer W is increased.
- the required processing volume also gradually increased in proportion to the square of the radius of the space A. Therefore, the volume of the processing chamber 211 does not increase linearly, but gradually increases, for example, as shown by a line P in FIG. Therefore, as the number of wafers W increases, there is a problem that the time for exhausting the inside of the processing chamber 211 increases.
- the horizontal axis represents the number of wafers W installed, and the vertical axis represents the volume in the processing chamber.
- FIG. 5 is for the case where the diameter of the wafer W is 300 mm.
- the processing chamber 20 of the present embodiment when the number of wafers W installed in the processing chamber 20 is increased, the processing chamber 20 shown in FIG. 2 is maintained with the width S of the processing chamber 20 kept constant. It is sufficient to enlarge only the diameter R of the. In other words, even if the number of wafers W installed in the processing chamber 20 is increased, the volume of the space B that is a necessary processing volume in the processing chamber 20, for example, the space B surrounded by the oblique lines in FIG. Therefore, for example, when the number of wafers W installed is increased by one, the volume of the processing chamber 20 only needs to be increased by the space B for one wafer, and the diameter of the space A as in the conventional processing chamber 211 is sufficient.
- the processing chamber 20 of the present embodiment When the inside of the processing chamber 20 is depressurized to a predetermined pressure, a predetermined processing gas is supplied from the gas supply mechanism 30 and a film forming process is performed on the wafer W.
- the required processing volume is smaller than that of the conventional processing chamber 211, so that the flow rate of the processing gas supplied to process one wafer W is also reduced.
- the running cost of the wafer processing system 1 can be reduced.
- the gate valve 27 is opened. Next, the processed wafers W are sequentially transferred from the processing chamber 20 to the vacuum transfer chamber 21 by the transfer arm 41 of the wafer transfer mechanism 40.
- the wafers W are sequentially accommodated in the cassette C of the cassette station 2 through the load lock chamber 5.
- the cassette C is transported to the outside of the cassette station 2 and a new cassette C accommodating unprocessed wafers W is transported to the cassette station 2. Then, the unprocessed wafers W are sequentially transferred to the processing chamber 20, and this series of processes is repeated.
- the processing chamber 20 is formed in an annular shape, and the wafer W is disposed concentrically in the processing chamber 20. Therefore, the wafer W is accommodated in the conventional cylindrical processing chamber 211. A space A that gradually increases as the number of sheets increases does not occur. Therefore, even if the number of wafers processed in the processing chamber 20 is increased, an increase in the volume of the processing chamber can be minimized.
- the increase in the footprint of the wafer processing system 1 is only the increase in the processing chamber 20. Can be suppressed. That is, the increase in the footprint with respect to the number of processed wafers W in the wafer processing system 1 of the present embodiment is the size of the cassette station 2 and the load lock chamber 5 which are transfer systems provided outside the vacuum transfer chamber 21. If there is no change, it is generally linear. Therefore, according to the present embodiment, the number of processed wafers W per the same footprint can be improved as compared with the conventional case.
- the present embodiment shown in FIG. 7 The footprint F of the wafer processing system of the embodiment (shown by a one-dot chain line in FIG. 7) is substantially the same as the cassette station 201, load lock chamber 214, and vacuum transfer chamber of the conventional batch processing system 200 as shown in FIG. It is within an area that covers 212.
- the footprint of the wafer processing system 1 according to the present embodiment is compared with the conventional batch processing system 200 when, for example, the wafer processing system 1 processes 12 wafers W in a batch manner. It has been confirmed that the footprint can be reduced by about 30%.
- the load lock chamber 5 is provided so as to straddle the upper or lower portion of the processing chamber 20, so that the portion where the load lock chamber 5 and the processing chamber 20 overlap in plan view. Even the footprint can be reduced.
- the vacuum transfer chamber 21 is disposed inside the annular processing chamber 20, but from the viewpoint of not increasing the required processing volume of the processing chamber 20, the processing chamber 20 is formed in an annular shape. Therefore, the vacuum transfer chamber 21 is not necessarily provided inside the processing chamber 20. In such a case, the gate valve 27 may be provided outside the processing chamber 20.
- the transfer arm 41 can access the gate valve 27 no matter where the gate valve 27 is provided inside the processing chamber 20.
- the arrangement of the gate valve 27 can be freely set. Therefore, it is preferable to provide the vacuum transfer chamber 21 inside the processing chamber 20.
- the wafer transfer mechanism 40 in the center of the vacuum transfer chamber 21, the distance from each transfer arm 41 to the processing chamber 20 becomes equal, and a transfer delay due to a difference in transfer distance does not occur. The management of the transport time of W can be facilitated, and the number of transports per unit time can be increased as the number of transport arms 41 is increased.
- the wafer processing system 1 having one processing chamber 20 has been described, but a plurality of processing chambers 20 may be provided.
- the processing chambers 20 may be arranged on both sides of the cassette station 2 with the cassette station 2 interposed therebetween. By doing so, an increase in footprint can be minimized.
- the transfer chamber 11 is provided in common to the two processing chambers 20 and the cassette station 2 is configured so that the cassette C is disposed on the side of the transfer chamber 11. The same as described above.
- FIG. 10 shows a conventional batch processing system 200 in which processing chambers 211 are arranged on both sides of the cassette station 2, and the region indicated by the alternate long and short dash line in FIG. 10 is the footprint of the wafer processing system 1 shown in FIG. F.
- the processing chamber 20 according to the present embodiment it is possible to minimize an increase in footprint due to the number of processed wafers W.
- the load lock chamber 5 is disposed only above or below the processing chamber 20.
- the load lock chamber 5 is disposed above and below the processing chamber 20.
- Two load lock chambers 5a and 5b may be provided so as to straddle both above and below the processing chamber 20.
- the vacuum transfer chamber 21 is configured to have such a height that the wafer W can be transferred to both the load lock chambers 5a and 5b.
- the transfer speed between the vacuum transfer chamber 21 and the cassette C may be limited by the load lock chamber 5, but the load lock chambers 5a and 5b are arranged in multiple stages in the vertical direction as shown in FIG. By doing so, it can be solved that the load lock room becomes a bottleneck.
- the processing chambers 20 may be arranged in multiple stages in the vertical direction as shown in FIG. 12, for example.
- the vacuum transfer chamber 21 is preferably configured to have a height corresponding to the number of stages of the processing chamber 20 provided in the vertical direction.
- the present invention can be applied to a single wafer processing system in which the inside of the processing chamber 20 is divided for each space B shown in FIG. 6 and the processing of the wafer W is performed for each space B individually.
- the present invention can also be applied to a wafer processing system in which a plurality of wafers W are simultaneously processed in a space.
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Abstract
Description
本願は、2014年3月31日に日本国に出願された特願2014-073450号に基づき、優先権を主張し、その内容をここに援用する。
2 カセットステーション
3 処理ステーション
4 制御装置
5 ロードロック室
10 カセット載置部
11 搬送室
12 ウェハ搬送アーム
20 処理チャンバ
21 真空搬送室
22 載置台
23 駆動機構
24 排気機構
27 ゲートバルブ
30 ガス供給機構
40 ウェハ搬送機構
C カセット
Claims (10)
- 複数の基板に対して処理を施す基板処理システムであって、
複数枚の基板を収容して所定の処理を施す円環状の処理チャンバと、
複数枚の基板を収容するカセットを載置するカセット載置部と、
前記処理チャンバと前記カセット載置部との間で基板を搬送する基板搬送機構と、を有し、
前記処理チャンバ内には、前記複数の基板が平面視において同心円状に配置されることを特徴とする、基板処理システム。 - 請求項1に記載の基板処理システムにおいて、
前記基板搬送機構は、前記円環状の処理チャンバの中心部の空間に配置され、
処理チャンバにおける前記基板搬送機構と対向する面にはゲートバルブが設けられている。 - 請求項2に記載の基板処理システムにおいて、
前記円環状の処理チャンバの中心部の空間には、当該処理チャンバに隣接して真空搬送室が設けられ、
前記基板搬送機構は、前記真空搬送室内に配置されている。 - 請求項3に記載の基板処理システムにおいて、
前記真空搬送室と前記カセット載置部は、ロードロック室を介して接続されている。 - 請求項4に記載の基板処理システムにおいて、
前記ロードロック室は、前記処理チャンバの上方、前記処理チャンバの下方、又は前記処理チャンバの上方及び下方の両方に配置されている。 - 請求項1に記載の基板処理システムにおいて、
前記処理チャンバ内には、前記複数の基板を載置する円環状の載置台と、前記載置台を前記処理チャンバ内で回転させる駆動機構が設けられている。 - 請求項2に記載の基板処理システムにおいて、
前記処理チャンバ内には、前記複数の基板を載置する円環状の載置台と、前記載置台を前記処理チャンバ内で回転させる駆動機構が設けられている。 - 請求項3に記載の基板処理システムにおいて、
前記処理チャンバ内には、前記複数の基板を載置する円環状の載置台と、前記載置台を前記処理チャンバ内で回転させる駆動機構が設けられている。 - 請求項4に記載の基板処理システムにおいて、
前記処理チャンバ内には、前記複数の基板を載置する円環状の載置台と、前記載置台を前記処理チャンバ内で回転させる駆動機構が設けられている。 - 請求項5に記載の基板処理システムにおいて、
前記処理チャンバ内には、前記複数の基板を載置する円環状の載置台と、前記載置台を前記処理チャンバ内で回転させる駆動機構が設けられている。
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KR1020167026835A KR101866112B1 (ko) | 2014-03-31 | 2015-02-27 | 기판 처리 시스템 |
US15/128,804 US10170347B2 (en) | 2014-03-31 | 2015-02-27 | Substrate processing system |
CN201580017535.2A CN106165082B (zh) | 2014-03-31 | 2015-02-27 | 基板处理系统 |
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US11024531B2 (en) * | 2017-01-23 | 2021-06-01 | Lam Research Corporation | Optimized low energy / high productivity deposition system |
KR101970780B1 (ko) * | 2017-04-13 | 2019-04-22 | 삼성디스플레이 주식회사 | 기판 처리 시스템 및 기판 반송 방법 |
JP6896682B2 (ja) * | 2018-09-04 | 2021-06-30 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
US10998209B2 (en) * | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
CN113314448B (zh) * | 2021-05-13 | 2022-07-22 | 长江存储科技有限责任公司 | 半导体传输设备及其控制方法 |
KR102622159B1 (ko) * | 2021-07-14 | 2024-01-09 | 한국생산기술연구원 | 원자층 복합 증착 챔버 |
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CN106165082A (zh) | 2016-11-23 |
US20170110349A1 (en) | 2017-04-20 |
KR20160127797A (ko) | 2016-11-04 |
JP6271322B2 (ja) | 2018-01-31 |
JP2015198097A (ja) | 2015-11-09 |
US10170347B2 (en) | 2019-01-01 |
CN106165082B (zh) | 2019-03-22 |
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