WO2015149493A1 - Oled显示器件的测试方法及测试系统 - Google Patents

Oled显示器件的测试方法及测试系统 Download PDF

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Publication number
WO2015149493A1
WO2015149493A1 PCT/CN2014/087788 CN2014087788W WO2015149493A1 WO 2015149493 A1 WO2015149493 A1 WO 2015149493A1 CN 2014087788 W CN2014087788 W CN 2014087788W WO 2015149493 A1 WO2015149493 A1 WO 2015149493A1
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WIPO (PCT)
Prior art keywords
oled display
display device
test
distribution image
backplane
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PCT/CN2014/087788
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English (en)
French (fr)
Inventor
李延钊
王刚
方金钢
赵会
查奇君
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京东方科技集团股份有限公司
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Priority to US14/435,766 priority Critical patent/US20160247429A1/en
Publication of WO2015149493A1 publication Critical patent/WO2015149493A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0066—Radiation pyrometry, e.g. infrared or optical thermometry for hot spots detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/48—Thermography; Techniques using wholly visual means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70—Testing, e.g. accelerated lifetime tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J2001/4247—Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/029—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel
    • G09G2320/0295—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel by monitoring each display pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/10—Dealing with defective pixels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
    • G09G2360/147—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen the originated light output being determined for each pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Definitions

  • the present disclosure relates to the field of OLED display device testing, and in particular, to a test method and a test system for an OLED display device.
  • the AMOLED (Active Matrix Organic Light Emitting Diode) panel technology is recognized as the core technology of the next generation display, which is similar to the process of LCD (Liquid Crystal Display) in preparation. It is also necessary to test a TFT (Thin Film Transistor) backplane.
  • TFT Thin Film Transistor
  • the OLED backplane cannot be tested by liquid crystal simulation.
  • the OLED backplane is generally tested by a secondary electron imaging test method and an electrical test method, wherein the accuracy of the secondary electron imaging test method is limited, and the electrical test method requires the design and process of the OLED backplane. Too high and at the same time requires data analysis and is not intuitive enough.
  • the present disclosure provides a testing method and a testing system for an OLED display device to improve test efficiency and test visibility of the OLED display device.
  • an embodiment of the present disclosure provides a testing method for an OLED display device, including:
  • the position of the backplane abnormal point on the OLED display device is determined.
  • the measured distribution image is an infrared spectral distribution image or a heat distribution image.
  • the step of acquiring the measured distribution image of the test area of the OLED display device to which the test signal is applied specifically includes:
  • a measured distribution image of each of the detection zones is sequentially acquired.
  • test area of the OLED display device is a single detection area.
  • the test area of the OLED display device is a pixel area of the OLED display device, or an integral area composed of a pixel area of the OLED display device and a peripheral circuit area of the OLED display device.
  • the calibration distribution image is:
  • the standard OLED display device has the same structure as the OLED display device to be tested, and has no circuit defects.
  • the step of applying the test signal to the OLED display device to be tested further includes:
  • the distribution image is taken as the calibration distribution image and stored.
  • the step of applying a test signal to the OLED display device further includes:
  • An OLED circuit simulation board is attached to the OLED display device.
  • the step of determining a location of the backplane abnormal point on the OLED display device specifically includes:
  • the method further includes:
  • the backplane abnormal point is marked in the measured distribution image.
  • the method further includes:
  • the image information at the abnormal point of the backplane in the measured distribution image is matched with the pre-stored back-plate abnormal point information database, and the cause of the occurrence of the abnormality of the backplane is initially determined, and the reason is output.
  • the method further includes:
  • the microscopy device is controlled to move to the position for observation.
  • the OLED display device is an OLED TFT backplane or an evaporated or printed OLED display panel or an OLED display module with completed circuit assembly.
  • the present disclosure also provides a test system for an organic light emitting diode OLED display device, including:
  • test signal applying device for applying a test signal to the OLED display device to be tested
  • An imaging device configured to acquire and display a measured distribution image of a test area of the OLED display device to which the test signal is applied;
  • a processing device configured to compare the measured distribution image with a corresponding calibration distribution image to obtain a comparison result, and determine, according to the comparison result, whether the test area has a backplane abnormal point, when the comparison The result indicates that when the test area has a backplane abnormal point, the position of the backplane abnormal point on the OLED display device is determined.
  • the imaging device is a CCD imager capable of acquiring thermal information or infrared information.
  • testing system further includes:
  • the imaging device is further configured to acquire an alignment mark of the OLED display device placed on the test platform;
  • the processing device is further configured to positionally align the OLED display device according to the alignment mark.
  • testing system further includes:
  • a control device for controlling the movement of the microscopic device to the position for observation.
  • testing system further includes:
  • the backplane abnormal point information database includes, in the backplane abnormal point information database, image information of the plurality of types of backplane abnormal points in the measured distribution image and the reason corresponding to the image information.
  • test results of the OLED device can be visually displayed through physical images, which can quickly determine the abnormality of the backplane, improve the test efficiency and test intuitiveness, and eliminate the need to add complicated test circuits, thereby reducing the test cost.
  • FIG. 1 is a schematic flow chart of a testing method of an OLED display device according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic structural diagram of an AMOLED-TFT backplane to be tested according to an embodiment of the present disclosure.
  • FIG. 3 is an example of a measured distribution image of the AMOLED-TFT backplane to be tested in FIG.
  • FIG. 4 is a schematic structural diagram of a test system of an OLED display device according to an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram of a test system of an OLED display device according to another embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of a test system of an OLED display device according to another embodiment of the present disclosure.
  • the OLED display device is driven by current, so that a large amount of heat is generated during the operation, so that the infrared spectrum distribution during the electrical operation is significantly different from that when it is not electrically operated.
  • the principle that the infrared spectrum is significantly changed when the OLED display device operates is obtained, and when the OLED display device is tested, the measured distribution image of the OLED display device to be tested to which the test signal is applied is obtained, and the measured image is measured.
  • the distribution image is compared with the corresponding calibration distribution image, and the OLED display device to be tested is determined according to the comparison result whether there is a backplane abnormal point, and the position of the backplane abnormal point is determined when there is an abnormality of the backplane to observe and judge the defect. .
  • FIG. 1 is a schematic flowchart diagram of a testing method of an organic light emitting diode OLED display device according to an embodiment of the present disclosure, where the method includes the following steps:
  • Step S11 A test signal is applied to the OLED display device to be tested.
  • the OLED display device to be tested may be an OLED TFT backplane, an evaporated or printed OLED display panel or an OLED display module with completed circuit assembly.
  • the OLED display panel includes an OLED TFT backplane and an OLED light emitting device.
  • the OLED display module includes an OLED display panel and peripheral circuits.
  • the test signal may include a voltage signal respectively supplied to a gate line, a data line, and a power line (VDD line) of the OLED display device.
  • the test signal may include: a gate line, a data line, a power line, a power supply negative line (V SS line), an S2 line, and an S3 line (S2, respectively) to the OLED display device.
  • S3 is a voltage signal provided by the timing control signal of the compensation circuit.
  • test signal can also be other test signals, which will not be described one by one.
  • Step S12 Acquire a measured distribution image of a test area of the OLED display device to which the test signal is applied.
  • the measured distribution image is an infrared spectral distribution image or a heat distribution image.
  • the test area of the OLED display device may be a pixel area of the OLED display device.
  • the test area of the OLED display device may also be an integral area composed of a pixel area of the OLED display device and a peripheral circuit area of the OLED display device.
  • the pixel area mainly includes circuit elements such as a TFT tube, a capacitor tube, a pixel electrode, a gate line, a data line, a V DD line, and a V SS line.
  • the peripheral circuit area mainly includes a row driving circuit, a column driving circuit, and other circuit parts.
  • the other circuit portion may include an ESD (electrostatic discharge) circuit or the like for preventing damage of the OLED display device due to an electrostatic problem.
  • the measured distribution image of the test area of the OLED display device to which the test signal is applied can be acquired by an imaging device.
  • the imaging device can be:
  • the distribution image generated by the imaging device can be directly used as the measured distribution image.
  • some image processing for example, splicing a plurality of distribution images into one distribution image or the like
  • the processed image may be used as the actual measurement distribution image.
  • Step S13 comparing the measured distribution image with the corresponding calibration distribution image to obtain a comparison result.
  • the calibration distribution image can be:
  • the standard OLED display device has the same structure as the OLED display device to be tested, and has no circuit defects.
  • Step S14 Determine whether there is a backplane abnormal point in the test area according to the comparison result.
  • Step S15 When the comparison result indicates that there is a backplane abnormal point in the test area, determine a position of the backplane abnormal point on the OLED display device.
  • the test result of the OLED device can be visually displayed through the physical image, the backplane abnormal point can be quickly determined, the test efficiency and the test intuitiveness are improved, and the complicated test circuit is not required, and the test is reduced. Test cost.
  • the OLED display device of the embodiments of the present disclosure may be an AMOLED (Active Matrix Organic Light Emitting Diode) display device, or may be other types of OLED display devices.
  • AMOLED Active Matrix Organic Light Emitting Diode
  • the OLED display device to be tested may be placed on a test platform, and then the OLED display device and the imaging device for acquiring the distributed image are aligned.
  • the step of applying a test signal to the OLED display device may further include the following steps:
  • An OLED circuit simulation board is attached to the OLED display device.
  • the imaging device is difficult to obtain a complete image of the test area of the OLED display device to be tested at one time.
  • the measured distribution image of the test area of the OLED display device is obtained.
  • the test area of the OLED display device is divided into a plurality of detection areas, and the measured distribution images of each of the detection areas are sequentially acquired.
  • each detection zone is the same size.
  • the imaging device can acquire a complete image of the test area of the OLED display device to be tested at one time, the division of the test area is not required, that is, the test area is a single detection area.
  • the calibration distribution image in the embodiment of the present disclosure may be a plurality of calibration distribution images corresponding to each detection area one by one.
  • the measured distribution of each detection area may be The image is compared with a calibration distribution image corresponding to the detection area.
  • the calibration distribution image in the embodiment of the present disclosure may also be an image.
  • the measured distribution images of all the detection areas of the OLED display device to be tested may be spliced to obtain a spliced complete image and compared with the calibration distribution image. Correct.
  • the step of applying a test signal to the OLED display device further includes:
  • the distribution image is taken as the calibration distribution image and stored.
  • the following method may be used to determine the position of the backplane abnormal point on the OLED display device to be tested:
  • the coordinate system of the device of course, the coordinate system of the measured distribution image acquired by the imaging device also uses the coordinate system.
  • the position of the backplane abnormal point on the OLED display device can be determined.
  • the method may further include: marking the backboard in the measured distribution image. Outlier.
  • the OLED display device is repaired.
  • the microscopic device may also be controlled. Move to the position for observation.
  • a backplane abnormal point information database may be pre-stored, and the backplane abnormal point information database includes: image information of multiple types of backplane abnormal points in the measured distribution image. And the reason for the image information.
  • the comparison result indicates that there is a backplane abnormal point in the test area
  • the image information at the abnormal point of the backplane in the measured distribution image is matched with the stored backplane abnormal point information database, and the backboard is initially determined.
  • the cause of the abnormal point and the reason is output.
  • the reason is only for reference, and it is also necessary to rely on the microscopic device for physical observation to accurately determine the cause.
  • test method of the OLED display device of the embodiment of the present disclosure will be described below by taking an AMOLED-TFT backplane as an example.
  • Embodiment 1 The OLED display device to be tested is an AMOLED-IGZO (Indium Gallium Zinc Oxide)-TFT backplane having a 2T1C structure (ie, including two transistors T and one capacitor C)
  • AMOLED-IGZO Indium Gallium Zinc Oxide
  • 2T1C structure ie, including two transistors T and one capacitor C
  • the testing method of the OLED display device of Embodiment 1 of the present disclosure includes the following steps:
  • Step S21 placing the IGZO-TFT backplane to be tested on the Array Substrate process on the test platform;
  • Step S22 Taking in a mark (Mark) of the IGZO-TFT backplane by using a photon inductive infrared CCD imager, and aligning the IGZO-TFT backplane according to the alignment mark.
  • Step S23 After aligning the position, an OLED circuit simulation board is attached to the IGZO-TFT backplane, and after the circuit simulation board is bonded to the IGZO-TFT backplane, the IGZO-TFT backplane
  • the upper circuit component is coupled to circuit components on the OLED circuit emulation board to form a test loop. Scanning from the first detection area (such as the first part in the AA (effective pixel area) area) of the IGZO-TFT backplane to the last detection area (such as the external circuit of the backplane) by using a photon inductive infrared CCD imager Area), obtaining a calibration distribution image of each detection area, and storing;
  • Step S24 applying a test signal to the IGZO-TFT backplane, for example, applying a voltage of 10 V to the gate line and the data line, applying a voltage of 12 V to the VDD line, and using a photon-inductive infrared CCD while maintaining the test signal.
  • the imager moves from the first detection area scan to the last detection area again, acquires the measured distribution image of each detection area, and stores it;
  • Step S25 comparing the measured distribution image with the corresponding calibration distribution image to obtain a comparison result.
  • the comparison result indicates that the test area of the IGZO-TFT backplane has an abnormality of the backplane, determine the location. The position of the backplane abnormal point on the IGZO-TFT backplane.
  • Step S26 Control the optical microscope to move to the determined position for observation to determine the cause of the occurrence of the abnormality of the backboard.
  • Embodiment 2 The OLED display device to be tested is an AMOLED-LTPS (Low Temperature Poly-silicon low temperature polysilicon)-TFT backplane comprising a compensation circuit of 4T2C (ie, including 4 transistors T and 2 capacitors C).
  • AMOLED-LTPS Low Temperature Poly-silicon low temperature polysilicon
  • 4T2C 4 transistors T and 2 capacitors C.
  • Step S31 placing the LTPS-TFT backplane to be tested on the completed array substrate process on the test platform;
  • Step S32 Taking in the alignment mark of the LTPS-TFT backplane by using a photon inductive infrared CCD imager, and aligning the LTPS-TFT backplane according to the alignment mark.
  • Step S33 After aligning the position, an OLED circuit simulation board is attached to the LTPS-TFT backplane, and the OLED circuit simulation board is bonded to the LTPS-TFT backplane, and the LTPS-TFT backplane is attached.
  • the circuit components are coupled to circuit components on the OLED circuit emulation board to form a test loop. Scanning from the first detection area (such as the first part in the AA (effective pixel area) area) of the LTPS-TFT backplane to the last detection area (such as the external circuit of the backplane) by using a photon inductive infrared CCD imager Area), obtaining a calibration distribution image of each detection area, and storing;
  • Step S34 Apply a test signal to the LTPS-TFT backplane, such as applying a voltage of 10 V to the gate line and the V DD line, grounding the V SS line, and applying a timing voltage signal to the S2 line and the S3 line, and pairing the data line. Applying each gray scale signal, in the case of maintaining the test signal, moving the photon inductive infrared CCD imager from the first detection area scan to the last detection area again, acquiring the measured distribution image of each detection area, and storing;
  • Step S35 Comparing the measured distribution image with the corresponding calibration distribution image to obtain a comparison result.
  • the comparison result indicates that the test area of the LTPS-TFT backplane has an abnormality of the backplane, determining the location The position of the backplane abnormal point on the IGZO-TFT backplane.
  • Step S36 Control the optical microscope to move to the determined position for observation to determine the cause of the occurrence of the abnormality of the backboard.
  • the AMOLED-TFT backplane to be tested may include: an amorphous silicon TFT backplane, a low temperature polysilicon (LTPS) TFT backplane, an oxide (such as IGZO) TFT backplane, and other various semiconductor materials.
  • LTPS low temperature polysilicon
  • oxide such as IGZO
  • the AMOLED-TFT backplane to be tested may be 2T1C, 4T2C, or an AMOLED-TFT backplane including other pixel structures.
  • FIG. 2 is a schematic structural diagram of an AMOLED TFT backplane to be tested according to an embodiment of the present disclosure.
  • the AMOLED TFT backplane includes a pixel region and a peripheral circuit region located at a periphery of the OLED block.
  • V D , V G , V 1 , and V 0 are test signals applied to the back panel of the AMOLED TFT, respectively, wherein V D is a test signal applied to the data line, and V G is applied to the gate.
  • the test signal on the line, V 1 is the test signal applied to the V DD line, and V 0 is the test signal applied to the V SS line. I generates a current after applying a test signal.
  • FIG. 3 is an example of a measured distribution image of the AMOLED TFT backplane to be tested in FIG. 2.
  • each small square represents one pixel.
  • some pixels have different colors from other pixels (the different filling lines in the figure indicate different colors),
  • the abnormal pixels are the abnormalities of the backplane in the above embodiment.
  • different pixel states may be represented by pixels of different colors, for example:
  • the blue pixel represents the normal pixel area, which accounts for the majority of the backplane
  • a yellow pixel indicates a pixel with a weak short circuit
  • Cyan pixels represent pixels that have an open circuit problem.
  • the tester can initially determine the cause of the abnormality of the backplane according to the color of the abnormal point of the backplane of the measured distribution image.
  • the OLED display device After determining the cause of the abnormality of the backplane, the OLED display device can be repaired, reworked or scrapped according to the specific situation. For example, for the short circuit phenomenon of individual pixels, the short circuit point can be cut by laser cutting; and for some metal lines open, a certain metal can be sputtered by a micro Sputter process to realize the wire connection.
  • the OLED display panel when the OLED display device to be tested is an OLED display panel, the OLED display panel can be tested in a vacuum so that the repair can be conveniently performed after the test is completed.
  • the present disclosure also provides a test system for an OLED display device, including:
  • test signal applying device for applying a test signal to the OLED display device to be tested
  • An imaging device configured to acquire and display a measured distribution image of a test area of the OLED display device to which the test signal is applied;
  • a processing device configured to compare the measured distribution image with a corresponding calibration distribution image to obtain a comparison result, and determine, according to the comparison result, whether the test area has a backplane abnormal point, when the comparison The result indicates that when the test area has a backplane abnormal point, the position of the backplane abnormal point on the OLED display device is determined.
  • testing system of the OLED display device of the embodiment of the present disclosure may further include:
  • the imaging device is further configured to acquire an alignment mark of the OLED display device placed on the test platform;
  • the processing device is further configured to positionally align the OLED display device according to the alignment mark.
  • the processing device may process the acquired distributed image, such as intercepting, splicing, and amplifying, by a corresponding computer hardware or computer hardware in combination with software.
  • testing system of the embodiment of the present disclosure may further include:
  • a control device for controlling the movement of the microscopic device to the position for observation.
  • the microscopic device can be an optical microscope, an infrared or ultraviolet microscope, a Raman spectrometer or other microscopy device.
  • the test system of the embodiments of the present disclosure may further include a backplane repair device such as a laser for cutting and melting metal wires; micro CVD (Chemical Vapor Deposition) and Sputter (Sputtering) equipment for depositing an insulating film or a metal film at an abnormal point of the backing plate.
  • a backplane repair device such as a laser for cutting and melting metal wires; micro CVD (Chemical Vapor Deposition) and Sputter (Sputtering) equipment for depositing an insulating film or a metal film at an abnormal point of the backing plate.

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  • General Physics & Mathematics (AREA)
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Abstract

一种OLED显示器件的测试方法及测试系统，测试方法包括：对待测试的OLED显示器件施加测试信号（S11）；获取施加测试信号的OLED显示器件的测试区域的实测分布图像（S12）；将实测分布图像与对应的校准分布图像进行对比，得到一比对结果（S13）；根据比对结果确定测试区域是否存在背板异常点（S14）；当比对结果表示测试区域存在背板异常点时，确定背板异常点在OLED显示器件上的位置（S15），从而能够提高OLED显示器件的测试效率和测试直观度，降低测试成本。

Description

OLED显示器件的测试方法及测试系统
相关申请的交叉引用
本申请主张在2014年3月31日在中国提交的中国专利申请No.201410127150.9的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及OLED显示器件测试领域，尤其涉及一种OLED显示器件的测试方法及测试系统。
背景技术
AMOLED(Active Matrix Organic Light Emitting Diode，有源矩阵有机发光二极体)面板技术被公认为是下一代显示的核心技术，其在进行制备时和LCD(Liquid Crystal Display，液晶显示器)的工艺相仿，同样需要对TFT(Thin Film Transistor，薄膜晶体管)背板进行测试。但是，同LCD背板测试技术相比，OLED背板无法采用液晶模拟的方法进行测试。在现有技术中，通常采用二次电子成像测试方法和电学测试方法对OLED背板进行测试，其中，二次电子成像测试方法的精度有限，而电学测试方法对OLED背板的设计和工艺要求过高，同时需要进行数据分析而不够直观。
现有技术中的OLED背板测试方法的种种缺陷，大大制约了OLED背板的成品测试以及后续的修复等工艺。
发明内容
有鉴于此，本公开提供一种OLED显示器件的测试方法及测试系统，以提高OLED显示器件的测试效率和测试直观度。
为解决上述技术问题，本公开的实施例提供一种OLED显示器件的测试方法，包括：
对待测试的OLED显示器件施加测试信号；
获取施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像；
将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果；
根据所述比对结果确定所述测试区域是否存在背板异常点；
当所述比对结果表示所述测试区域存在背板异常点时，确定所述背板异常点在所述OLED显示器件上的位置。
可选地，所述实测分布图像为红外光谱分布图像或热量分布图像。
可选地，所述获取施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像的步骤具体包括：
将所述OLED显示器件的测试区域划分为多个检测区；
依次获取每一所述检测区的实测分布图像。
可选地，所述OLED显示器件的测试区域为单一检测区。
可选地，所述OLED显示器件的测试区域为所述OLED显示器件的像素区域，或者为由所述OLED显示器件的像素区域和所述OLED显示器件的外围电路区域组成的整体区域。
可选地，所述校准分布图像为：
施加所述测试信号的标准OLED显示器件的理论分布图像；或
未施加所述测试信号的标准OLED显示器件的分布图像；或
未施加所述测试信号的所述待测试的OLED显示器件的分布图像；
其中，所述标准OLED显示器件与所述待测试的OLED显示器件的结构相同，且无电路缺陷。
可选地，当所述校准分布图像为未施加所述测试信号的所述待测试的OLED显示器件的分布图像时，所述对待测试的OLED显示器件施加测试信号的步骤之前还包括：
获取所述OLED显示器件的测试区域的分布图像；
将所述分布图像作为所述校准分布图像，并存储。
可选地，所述对OLED显示器件施加测试信号的步骤之前还包括：
将所述OLED显示器件放置在测试平台上；
采用成像装置获取所述OLED显示器件的对位标记；
根据所述对位标记对所述OLED显示器件进行位置对准；
在所述OLED显示器件上贴附OLED电路模拟板。
可选地，所述确定所述背板异常点在所述OLED显示器件上的位置的步骤具体包括：
获取位置对准时成像装置获取的待测试OLED显示器件的对位标记，根据所述对位标记，生成所述待测试OLED显示器件的坐标系，当检测出实测分布图像中存在背板异常点时，根据所述坐标系，确定背板异常点在OLED显示器件上的位置。
可选地，当所述比对结果表示所述测试区域存在背板异常点时，所述方法还包括：
在所述实测分布图像中标示出所述背板异常点。
可选地，当所述比对结果表示所述测试区域存在背板异常点时，所述方法还包括：
将实测分布图像中的背板异常点处的图像信息与预先存储的背板异常点信息库进行匹配，初步判断所述背板异常点发生的原因，并输出所述原因。
可选地，所述确定所述背板异常点在所述OLED显示器件上的位置的步骤之后还包括：
控制显微装置移动至所述位置进行观察。
可选地，所述OLED显示器件为OLED TFT背板或已蒸镀或已打印的OLED显示面板或已完成电路组装的OLED显示模组。
本公开还提供一种有机发光二极体OLED显示器件的测试系统，包括：
测试信号施加装置，用于对待测试的OLED显示器件施加测试信号；
成像装置，用于获取并显示施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像；
处理装置，用于将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果，并根据所述比对结果确定所述测试区域是否存在背板异常点，当所述比对结果表示所述测试区域存在背板异常点时，确定所述背板异常点在所述OLED显示器件上的位置。
可选地，所述成像装置为能够获取热量信息或红外信息的CCD成像仪。
可选地，所述测试系统还包括：
测试平台；
其中，所述成像装置，还用于获取放置于所述测试平台上的所述OLED显示器件的对位标记；
所述处理装置，还用于根据所述对位标记对所述OLED显示器件进行位置对准。
可选地，所述测试系统还包括：
显微装置；及
控制装置，用于控制显微装置移动至所述位置进行观察。
可选地，所述测试系统还包括：
背板异常点信息库，在所述背板异常点信息库中包括多种类型的背板异常点在实测分布图像中图像信息以及所述图像信息对应的原因。
本公开的上述技术方案的有益效果如下：
对OLED器件的测试结果能够通过物理图像直观显示，可以快速确定背板异常点，提高了测试效率和测试直观度，且不需要加入复杂的测试电路，降低了测试成本。
附图说明
图1为本公开实施例的OLED显示器件的测试方法的流程示意图。
图2为本公开实施例的待测试AMOLED-TFT背板的一结构示意图。
图3为图2中的待测试AMOLED-TFT背板的实测分布图像的示例。
图4为本公开一实施例的OLED显示器件的测试系统的结构示意图。
图5为本公开另一实施例的OLED显示器件的测试系统的结构示意图。
图6为本公开另一实施例的OLED显示器件的测试系统的结构示意图。
具体实施方式
OLED显示器件通过电流驱动工作，因而在工作过程中会产生较大的热量，从而其电学工作时的红外光谱分布会与其不进行电学工作状态时有显著差异。在本公开的实施例中，即是利用OLED显示器件工作时红外光谱发生显著变化的原理，在进行OLED显示器件测试时，获取施加测试信号的待测试OLED显示器件的实测分布图像，并将实测分布图像与对应的校准分布图像进行比对，根据比对结果确定待测试OLED显示器件是否存在背板异常点，在存在背板异常点时确定背板异常点的位置，以进行观察和判断缺陷。
为使本公开要解决的技术问题、技术方案和优点更加清楚，下面将结合 附图及具体实施例进行详细描述。
请参考图1，图1为本公开实施例的有机发光二极体OLED显示器件的测试方法的流程示意图，所述方法包括以下步骤：
步骤S11：对待测试的OLED显示器件施加测试信号。
所述待测试的OLED显示器件可以为OLED TFT背板、已蒸镀或已打印的OLED显示面板或已完成电路组装的OLED显示模组。其中，OLED显示面板包括OLED TFT背板和OLED发光器件。OLED显示模组包括OLED显示面板及外围电路。
所述测试信号可以包括：分别向所述OLED显示器件的栅线(Gate line)、数据线(Data line)及电源线(VDD line)提供的电压信号。
当所述OLED显示器件包含补偿电路时，所述测试信号可以包括：分别向所述OLED显示器件的栅线、数据线、电源线、电源负极线(VSS line)、S2line及S3line(S2、S3为补偿电路的时序控制信号)提供的电压信号。
当然，根据OLED显示器件不同的电路结构，所述测试信号还可以为其他测试信号，在此不再一一说明。
步骤S12：获取施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像。所述实测分布图像为红外光谱分布图像或热量分布图像。
所述OLED显示器件的测试区域可以为所述OLED显示器件的像素区域。
所述OLED显示器件的测试区域也可以为由所述OLED显示器件的像素区域和所述OLED显示器件的外围电路区域组成的整体区域。
所述像素区域主要包括TFT管、电容管、像素电极、栅线、数据线、VDD线及VSS线等电路元件。
所述外围电路区域主要包括行驱动电路、列驱动电路及其他电路部分。所述其他电路部分可以包括：用于防止所述OLED显示器件因静电问题而造成损伤的ESD(静电释放)电路等。
具体的，可以通过一成像装置获取施加测试信号的OLED显示器件的测试区域的实测分布图像。
所述成像装置可以为：
光子感应式红外CCD(电荷耦合元件)成像仪；
热感应式红外CCD成像仪；
光子感应式和热感应式相结合的红外CCD成像仪；或者
其他能够获取热量信息或红外信息的CCD成像仪。
具体地，可以将所述成像装置生成的分布图像直接作为所述实测分布图像。
此外，也可以对所述成像装置生成的分布图像进行一些图像处理(例如，将多个分布图像拼接成一个分布图像等)，将处理完的图像作为所述实测分布图像。
步骤S13：将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果。
其中，所述校准分布图像可以为：
施加所述测试信号的标准OLED显示器件的理论分布图像；或
未施加所述测试信号的标准OLED显示器件的分布图像；或
未施加所述测试信号的所述待测试的OLED显示器件的分布图像；
其中，所述标准OLED显示器件与所述待测试的OLED显示器件的结构相同，且无电路缺陷。
步骤S14：根据所述比对结果确定所述测试区域是否存在背板异常点。
步骤S15：当所述比对结果表示所述测试区域存在背板异常点时，确定所述背板异常点在所述OLED显示器件上的位置。
上述实施例提供的测试方法中，对OLED器件的测试结果能够通过物理图像直观显示，可以快速确定背板异常点，提高了测试效率和测试直观度，且不需要加入复杂的测试电路，降低了测试成本。
本公开实施例的OLED显示器件可以为AMOLED(有源矩阵有机发光二极体)显示器件，也可以为其他类型的OLED显示器件。
为了提高测试精度，本公开实施例中，可以将待测试OLED显示器件放置在一测试平台上，然后对OLED显示器件和用于获取分布图像的成像装置进行位置对准。
即，上述对OLED显示器件施加测试信号的步骤之前还可以包括以下步骤：
将所述OLED显示器件放置在测试平台上；
采用成像装置获取所述OLED显示器件的对位标记；
根据所述对位标记对所述OLED显示器件进行位置对准；
在所述OLED显示器件上贴附OLED电路模拟板。
当待测试OLED显示器件尺寸较大时，成像装置很难一次性获取待测试OLED显示器件的测试区域的完整图像，本公开实施例中，在获取所述OLED显示器件的测试区域的实测分布图像时，将OLED显示器件的测试区域划分为多个检测区，依次获取每一所述检测区的实测分布图像。可选地，每一检测区的尺寸相同。
当待测试OLED显示器件尺寸较小时，如果成像装置可以一次性获取待测试OLED显示器件的测试区域的完整图像，则不需要进行测试区域的划分，即所述测试区域为单一检测区。
当将测试区域划分为多个检测区时，本公开实施例中的校准分布图像可以是与每一检测区一一对应的多个校准分布图像，此时，可以将每一检测区的实测分布图像与该检测区对应的校准分布图像进行比对。
本公开实施例中的校准分布图像也可以是一个图像，此时，可以将待测试OLED显示器件的所有检测区的实测分布图像进行拼接，得到拼接后的完整图像，并与校准分布图像进行比对。
当所述校准分布图像为未施加所述测试信号的所述待测试的OLED显示器件的分布图像时，所述对OLED显示器件施加测试信号的步骤之前还包括：
获取所述OLED显示器件的测试区域的分布图像；
将所述分布图像作为所述校准分布图像，并存储。
另外，在获取未施加测试信号的OLED显示器件的测试区域的分布图像之前，还需要进行对所述OLED显示器件进行位置对准的步骤(上述实施例中已详细说明如何进行位置对准，在此不再详细描述)。
本公开实施例中可以采用以下方法确定背板异常点在待测试OLED显示器件上的位置：
获取位置对准时成像装置获取的待测试OLED显示器件的对位标记(对位标记的个数通常为多个)，根据所述对位标记，生成所述待测试OLED显示 器件的坐标系，当然，成像装置获取的实测分布图像的坐标系也采用该坐标系。当检测出实测分布图像中存在背板异常点时，根据所述坐标系，则可以确定背板异常点在OLED显示器件上的位置。
当然，本公开实施例中，也不排除采用其他方法确定所述背板异常点在所述OLED显示器件上的位置。
为了方便测试人员观看，本公开实施例中，当所述比对结果表示所述测试区域存在背板异常点时，所述方法还可以包括：在所述实测分布图像中标示出所述背板异常点。
为了确定背板异常点发生的原因，对OLED显示器件进行修复，本公开实施例中，在确定所述背板异常点在所述OLED显示器件上的位置的步骤之后，还可以控制显微装置移动至所述位置进行观察。
另外，为了提高测试效率，本公开实施例中，可以预先存储一背板异常点信息库，所述背板异常点信息库中包括：多种类型的背板异常点在实测分布图像中图像信息，以及该图像信息对应的原因。当所述比对结果表示所述测试区域存在背板异常点时，将实测分布图像中的背板异常点处的图像信息与存储的背板异常点信息库进行匹配，初步判断所述背板异常点发生的原因，并输出所述原因。当然，该原因仅是用于参考，还需要依靠显微装置进行实物观察，才能准确判断原因。
下面以AMOLED-TFT背板为例，对本公开实施例的OLED显示器件的测试方法进行说明。
实施例一：待测试的OLED显示器件为2T1C结构(即，包括两个晶体管T和一个电容器C)的AMOLED-IGZO(铟镓锌氧化物)-TFT背板
本公开实施例一的OLED显示器件的测试方法包括以下步骤：
步骤S21：将已完成阵列基板(Array Substrate)工艺的待测试IGZO-TFT背板放置在测试平台之上；
步骤S22：采用光子感应式红外CCD成像仪摄取所述IGZO-TFT背板的对位标记(Mark)，并根据所述对位标记对所述IGZO-TFT背板进行位置对准。
步骤S23：对准位置后，在所述IGZO-TFT背板上贴附一OLED电路模拟板，所述电路模拟板与所述IGZO-TFT背板贴合后，所述IGZO-TFT背板 上的电路元件与所述OLED电路模拟板上的电路元件连接以形成测试回路。采用光子感应式红外CCD成像仪依次从所述IGZO-TFT背板的第一检测区(如AA(有效像素区域)区中的第一部分)扫描移动至最后一检测区(如背板的外部电路区域)，获取每一检测区的校准分布图像，并存储；
步骤S24：对所述IGZO-TFT背板上施加测试信号，如对栅线和数据线上分别施加10V电压，对VDD线施加12V电压，在保持测试信号的情况下，将光子感应式红外CCD成像仪再次从第一检测区扫描移动至最后一检测区，获取每一检测区的实测分布图像，并存储；
步骤S25：将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果，当所述比对结果表示所述IGZO-TFT背板的测试区域存在背板异常点时，确定所述背板异常点在所述IGZO-TFT背板上的位置。
步骤S26：控制光学显微镜移动至所述确定的位置处进行观察，以判断背板异常点发生的原因。
实施例二：待测试的OLED显示器件为包含补偿电路的4T2C(即，包括4个晶体管T和2个电容器C)结构的AMOLED-LTPS(Low Temperature Poly-silicon低温多晶硅)-TFT背板.
本公开实施例二的OLED显示器件的测试方法包括以下步骤：
步骤S31：将已完成阵列基板工艺的待测试LTPS-TFT背板放置在测试平台之上；
步骤S32：采用光子感应式红外CCD成像仪摄取所述LTPS-TFT背板的对位标记，并根据所述对位标记对所述LTPS-TFT背板进行位置对准。
步骤S33：对准位置后，所述LTPS-TFT背板上贴附一OLED电路模拟板，所述OLED电路模拟板与所述LTPS-TFT背板贴合后，所述LTPS-TFT背板上的电路元件与所述OLED电路模拟板上的电路元件连接以形成测试回路。采用光子感应式红外CCD成像仪依次从所述LTPS-TFT背板的第一检测区(如AA(有效像素区域)区中的第一部分)扫描移动至最后一检测区(如背板的外部电路区域)，获取每一检测区的校准分布图像，并存储；
步骤S34：对所述LTPS-TFT背板上施加测试信号，如对栅线和VDD线上分别施加10V电压，将VSS线接地，对S2线和S3线施加时序电压信号， 对数据线施加各灰阶信号，在保持测试信号的情况下，将光子感应式红外CCD成像仪再次从第一检测区扫描移动至最后一检测区，获取每一检测区的实测分布图像，并存储；
步骤S35：将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果，当所述比对结果表示所述LTPS-TFT背板的测试区域存在背板异常点时，确定所述背板异常点在所述IGZO-TFT背板上的位置。
步骤S36：控制光学显微镜移动至所述确定的位置处进行观察，以判断背板异常点发生的原因。
本公开实施例中，待测试的AMOLED-TFT背板可以包括：非晶硅TFT背板，低温多晶硅(LTPS)TFT背板，氧化物(如IGZO)TFT背板及其他各种半导体材料制备的AMOLED-TFT背板。
本公开实施例中，待测试的AMOLED-TFT背板可以为2T1C、4T2C或包含其他像素结构的AMOLED-TFT背板。
请参考图2，图2为本公开实施例的待测试AMOLED TFT背板的一结构示意图。
所述AMOLED TFT背板包括像素区域，及位于OLED块外围的外围电路区域。图2中，VD、VG、V1、V0分别为施加在所述AMOLED TFT背板上的测试信号，其中，VD为施加在数据线上的测试信号，VG为施加在栅线上的测试信号，V1为施加在VDD线上的测试信号，V0为施加在VSS线上的测试信号。I为施加测试信号后产生电流。
本公开实施例中，仅对像素区域进行测试。
请参考图3，图3为图2中的待测试AMOLED TFT背板的实测分布图像的一个实例。
在图3中的实测分布图像中，每一小格代表一个像素，从图3中可以看出，有一些像素的颜色与其他像素的颜色不同(图中用不同的填充线条表示颜色不同)，该些异常的像素即上述实施例中的背板异常点。
具体的，可以由不同颜色的像素表示不同的像素状态，例如：
蓝色像素表示正常的像素区，其比例占背板的大多数；
红色像素表示出现严重漏电的像素；
黄色像素表示出现微弱短路的像素；
青色像素表示出现开路问题的像素。
从而，测试人员可以根据实测分布图像的背板异常点的颜色，初步判断所述背板异常点发生的原因。
在确定背板异常点发生的原因之后，可以根据具体情况，对OLED显示器件进行修复，重工或者报废。例如，对于个别像素发生的短路现象，可以采用激光切割的方式将短路点切除；而对于部分金属线路开路的地方，可以用微型Sputter(溅射)工艺溅射一定的金属实现导线的连通。
上述实施例中，当待测试OLED显示器件为OLED显示面板时，可在真空中对OLED显示面板进行测试，以便在测试完成后可以方便地进行修复。
本公开还提供一种OLED显示器件的测试系统，包括：
测试信号施加装置，用于对待测试的OLED显示器件施加测试信号；
成像装置，用于获取并显示施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像；
处理装置，用于将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果，并根据所述比对结果确定所述测试区域是否存在背板异常点，当所述比对结果表示所述测试区域存在背板异常点时，确定所述背板异常点在所述OLED显示器件上的位置。
上述测试系统如图4所示。
可选地，本公开实施例的OLED显示器件的测试系统还可以包括：
测试平台；
其中，所述成像装置，还用于获取放置于所述测试平台上的所述OLED显示器件的对位标记；
所述处理装置，还用于根据所述对位标记对所述OLED显示器件进行位置对准。
上述测试系统如图5所示。
发明实施例中的成像装置可以为：
光子感应式红外CCD(电荷耦合元件)成像仪；或者
热感应式红外CCD成像仪；或者
光子感应式和热感应式相结合的红外CCD成像仪；或者
其他能够获取热量信息或红外信息的CCD成像仪。
所述处理装置可以对获取的分布图像进行处理，如截取、拼接、放大等，由相应的计算机硬件或者计算机硬件结合软件完成。
可选地，本公开实施例的测试系统还可以包括：
显微装置；及
控制装置，用于控制显微装置移动至所述位置进行观察。
所述显微装置可以为光学显微镜，红外或紫外显微镜，拉曼光谱仪或者其他显微装置。
上述测试系统如图6所示。
此外，为了对检测出问题的OLED显示器件进行维修，本公开实施例的测试系统还可以包括背板修复设备，如：激光器，用于切割及熔融金属线；微型CVD(化学气相沉积)和Sputter(溅射)设备，用于在背板异常点进行绝缘膜或金属膜的沉积。
以上所述是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (19)

  1. 一种有机发光二极体OLED显示器件的测试方法，包括：
    对待测试的OLED显示器件施加测试信号；
    获取施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像；
    将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果；
    根据所述比对结果确定所述测试区域是否存在背板异常点；
    当所述比对结果表示所述测试区域存在背板异常点时，确定所述背板异常点在所述OLED显示器件上的位置。
  2. 根据权利要求1所述的测试方法，其中，所述实测分布图像为红外光谱分布图像或热量分布图像。
  3. 根据权利要求1所述的测试方法，其中，所述获取施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像的步骤具体包括：
    将所述OLED显示器件的测试区域划分为多个检测区；
    依次获取每一所述检测区的实测分布图像。
  4. 根据权利要求1所述的测试方法，其中，所述OLED显示器件的测试区域为单一检测区。
  5. 根据权利要求1所述的测试方法，其中，所述OLED显示器件的测试区域为所述OLED显示器件的像素区域，或者为由所述OLED显示器件的像素区域和所述OLED显示器件的外围电路区域组成的整体区域。
  6. 根据权利要求1所述的测试方法，其中，所述校准分布图像为：
    施加所述测试信号的标准OLED显示器件的理论分布图像；
    其中，所述标准OLED显示器件与所述待测试的OLED显示器件的结构相同，且无电路缺陷。
  7. 根据权利要求1所述的测试方法，其中，所述校准分布图像为：
    未施加所述测试信号的标准OLED显示器件的分布图像；
    其中，所述标准OLED显示器件与所述待测试的OLED显示器件的结构相同，且无电路缺陷。
  8. 根据权利要求1所述的测试方法，其中，所述校准分布图像为：
    未施加所述测试信号的所述待测试的OLED显示器件的分布图像。
  9. 根据权利要求8所述的测试方法，其中，所述对待测试的OLED显示器件施加测试信号的步骤之前还包括：
    获取所述OLED显示器件的测试区域的分布图像；
    将所述分布图像作为所述校准分布图像，并存储。
  10. 根据权利要求1所述的测试方法，其中，所述对待测试的OLED显示器件施加测试信号的步骤之前还包括：
    将所述OLED显示器件放置在测试平台上；
    采用成像装置获取所述OLED显示器件的对位标记；
    根据所述对位标记对所述OLED显示器件进行位置对准；
    在所述OLED显示器件上贴附OLED电路模拟板。
  11. 根据权利要求1所述的测试方法，其中，所述确定所述背板异常点在所述OLED显示器件上的位置的步骤具体包括：
    获取位置对准时成像装置获取的待测试OLED显示器件的对位标记，根据所述对位标记，生成所述待测试OLED显示器件的坐标系，当检测出实测分布图像中存在背板异常点时，根据所述坐标系，确定背板异常点在OLED显示器件上的位置。
  12. 根据权利要求1所述的测试方法，其中，当所述比对结果表示所述测试区域存在背板异常点时，所述方法还包括：
    在所述实测分布图像中标示出所述背板异常点。
  13. 根据权利要求1所述的测试方法，其中，当所述比对结果表示所述测试区域存在背板异常点时，所述方法还包括：
    将实测分布图像中的背板异常点处的图像信息与预先存储的背板异常点信息库进行匹配，初步判断所述背板异常点发生的原因，并输出所述原因。
  14. 根据权利要求1所述的测试方法，其中，所述确定所述背板异常点在所述OLED显示器件上的位置的步骤之后还包括：
    控制显微装置移动至所述位置进行观察。
  15. 根据权利要求1-14任一项所述的测试方法，其中，所述OLED显示 器件为OLED TFT背板或已蒸镀或已打印的OLED显示面板或已完成电路组装的OLED显示模组。
  16. 一种有机发光二极体OLED显示器件的测试系统，包括：
    测试信号施加装置，用于对待测试的OLED显示器件施加测试信号；
    成像装置，用于获取并显示施加所述测试信号的所述OLED显示器件的测试区域的实测分布图像；
    处理装置，用于将所述实测分布图像与对应的校准分布图像进行对比，得到一比对结果，并根据所述比对结果确定所述测试区域是否存在背板异常点，当所述比对结果表示所述测试区域存在背板异常点时，确定所述背板异常点在所述OLED显示器件上的位置。
  17. 根据权利要求16所述的测试系统，其中，所述成像装置为能够获取热量信息或红外信息的CCD成像仪。
  18. 根据权利要求16所述的测试系统，还包括：
    测试平台；
    其中，所述成像装置，还用于获取放置于所述测试平台上的所述OLED显示器件的对位标记；
    所述处理装置，还用于根据所述对位标记对所述OLED显示器件进行位置对准。
  19. 根据权利要求16所述的测试系统，还包括：
    显微装置；及
    控制装置，用于控制显微装置移动至所述位置进行观察。
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103927954A (zh) * 2014-03-31 2014-07-16 京东方科技集团股份有限公司 一种oled显示器件的测试方法及测试系统
CN106782233B (zh) * 2015-11-20 2020-12-18 宁波舜宇光电信息有限公司 Oled显示屏检测系统及其应用
CN106199365B (zh) * 2016-06-17 2018-11-23 深圳市华星光电技术有限公司 Oled掺杂浓度的选择方法
JP6513298B2 (ja) * 2016-09-16 2019-05-15 三菱電機株式会社 制御試験装置及び制御試験方法
CN107170911B (zh) * 2017-06-23 2019-01-04 深圳市华星光电技术有限公司 一种显示面板的老化测试系统及方法
CN109142903A (zh) * 2017-06-27 2019-01-04 鸿富锦精密工业(武汉)有限公司 电子设备的测试系统与方法
CN107256686B (zh) * 2017-07-04 2019-09-03 上海天马有机发光显示技术有限公司 一种有机发光显示面板、其测试方法及装置及其显示方法
CN108597425B (zh) * 2018-03-20 2021-07-23 武汉华星光电半导体显示技术有限公司 一种用于oled显示面板的测试装置及测试方法
US11727837B2 (en) 2018-04-26 2023-08-15 Beijing Boe Display Technology Co., Ltd. Self-monitoring method of display and display
CN108682367B (zh) * 2018-04-26 2022-09-09 京东方科技集团股份有限公司 显示器自监控方法以及显示器
CN110136619A (zh) * 2019-06-28 2019-08-16 京东方科技集团股份有限公司 显示面板的不良检测方法、装置、质量管理方法
CN110174414A (zh) * 2019-07-03 2019-08-27 厦门特仪科技有限公司 一种Micro-OLED产品光学检测设备及晶圆片检测方法
CN111076902A (zh) * 2019-12-26 2020-04-28 云南北方光电仪器有限公司 Oled微型显示器性能快速检测装置和检测方法
CN113852800A (zh) * 2020-06-28 2021-12-28 深圳Tcl新技术有限公司 一种显示画面的测试方法、终端及存储介质
CN114930385A (zh) * 2020-12-03 2022-08-19 京东方科技集团股份有限公司 用于缺陷分析的计算机实现的方法、用于缺陷分析的设备、计算机程序产品和智能缺陷分析系统

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111424A (en) * 1997-09-04 2000-08-29 Lucent Technologies Inc. Testing method and apparatus for flat panel displays using infrared imaging
CN1494358A (zh) * 2002-11-01 2004-05-05 ͳ�����ɷ����޹�˾ 测试amoled驱动电路的方法及系统
CN1525182A (zh) * 2003-02-25 2004-09-01 友达光电股份有限公司 有机发光二极管显示器面板的检测结构及其制作方法
CN1620603A (zh) * 2002-01-23 2005-05-25 马雷纳系统有限公司 采用红外热成像法进行缺陷检测和分析
CN202057742U (zh) * 2011-03-28 2011-11-30 宏濑科技股份有限公司 平面显示器检测系统
CN102708770A (zh) * 2011-03-28 2012-10-03 宏濑科技股份有限公司 平面显示器的缺陷检测系统及方法
CN103927954A (zh) * 2014-03-31 2014-07-16 京东方科技集团股份有限公司 一种oled显示器件的测试方法及测试系统

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111424A (en) * 1997-09-04 2000-08-29 Lucent Technologies Inc. Testing method and apparatus for flat panel displays using infrared imaging
CN1620603A (zh) * 2002-01-23 2005-05-25 马雷纳系统有限公司 采用红外热成像法进行缺陷检测和分析
CN1494358A (zh) * 2002-11-01 2004-05-05 ͳ�����ɷ����޹�˾ 测试amoled驱动电路的方法及系统
CN1525182A (zh) * 2003-02-25 2004-09-01 友达光电股份有限公司 有机发光二极管显示器面板的检测结构及其制作方法
CN202057742U (zh) * 2011-03-28 2011-11-30 宏濑科技股份有限公司 平面显示器检测系统
CN102708770A (zh) * 2011-03-28 2012-10-03 宏濑科技股份有限公司 平面显示器的缺陷检测系统及方法
CN103927954A (zh) * 2014-03-31 2014-07-16 京东方科技集团股份有限公司 一种oled显示器件的测试方法及测试系统

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