WO2015139449A1 - 阵列基板及其制备方法、有机电致发光显示装置 - Google Patents

阵列基板及其制备方法、有机电致发光显示装置 Download PDF

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WO2015139449A1
WO2015139449A1 PCT/CN2014/088597 CN2014088597W WO2015139449A1 WO 2015139449 A1 WO2015139449 A1 WO 2015139449A1 CN 2014088597 W CN2014088597 W CN 2014088597W WO 2015139449 A1 WO2015139449 A1 WO 2015139449A1
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substrate
layer
electrode layer
array substrate
refractive index
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PCT/CN2014/088597
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French (fr)
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侯文军
刘则
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京东方科技集团股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • the present invention belongs to the field of display technologies, and in particular, to an array substrate and a method for fabricating the same, and an organic electroluminescence display device including the array substrate.
  • the internal quantum efficiency can reach 100%, and the external quantum efficiency is only 20%, which is due to the surface plasmon mode, waveguide mode and The combination of substrate modes makes it difficult to emit light in the device structure.
  • a conventional OLED device structure includes a substrate 1 and a light-emitting layer 4 disposed on the substrate 1, and an electrode layer for supplying a voltage to the light-emitting layer 4 on the upper and lower sides of the light-emitting layer 4, the electrode layer including The first electrode layer 2 located on the light exiting side of the light emitting layer 4 (the direction of the arrow in FIG. 1, ie, the lower side of the light emitting layer 4), and the second side on the other side of the light emitting layer 4 (the upper side of the light emitting layer 4) Electrode 5.
  • the refractive index of the light-emitting layer 4 is 1.7-2.0, the refractive index of the electrode layer (Indium Tin Oxide, ITO) is 1.8-1.9, and the refractive index of the substrate (glass) is about 1.5.
  • the substrate mode has a large influence on the light extraction efficiency.
  • the rate is generally greater than the refractive index of the substrate (glass), and the refractive index of the substrate (glass) is greater than the refractive index of air, which causes total reflection at the electrode layer/substrate, substrate/air interface, which limits The light is transmitted from the device and the transmission efficiency.
  • the object of the present invention is to solve the problem of low light extraction efficiency caused by total reflection of the electrode layer and the substrate interface in the array substrate and the organic electroluminescence display device of the prior art, and to provide an array substrate capable of improving light extraction efficiency. Electroluminescence Display device.
  • a technical solution to solve the technical problem of the present invention is an array substrate comprising a substrate and a light-emitting layer disposed on the substrate, the substrate having at least one rough surface.
  • the substrate of the array substrate of the present invention has a rough surface, light can be scattered or diffracted on the rough surface of the substrate to enhance light extraction efficiency.
  • the array substrate further includes: a first electrode layer on a side of the light emitting layer adjacent to the substrate; and a second electrode layer on another side of the light emitting layer, wherein the first electrode layer And the second electrode layer provides a voltage to the light emitting layer.
  • a planarization layer is disposed between the first electrode layer and the substrate, the planarization layer is in contact with a rough surface of the substrate; and a refractive index of the planarization layer is greater than or equal to the first The refractive index of an electrode layer. Since the refractive index of the planarization layer is greater than or equal to the refractive index of the electrode layer, total reflection does not occur between the first electrode layer/flattening layer, and the light extraction efficiency is improved. This further reduces the total reflection of the substrate-air contact interface and improves the light extraction efficiency.
  • the planarization layer has a refractive index of 2.0 to 3.0, and the first electrode layer has a refractive index of 1.8 to 1.9.
  • the surface of the substrate remote from the light-emitting layer is a rough surface.
  • the roughness of the rough surface has an Ra of from 5 to 500 nm, wherein Ra is a contour arithmetic mean deviation.
  • the substrate is a substrate made of any one of silicon dioxide, polyethylene terephthalate, polyethylene naphthalate, and polyimide.
  • the material of the planarization layer is any one of ZrO 2 , TiO 2 , Ta 2 O 5 , and Nb 2 O 5 .
  • the material of the planarization layer is a fluorinated polyimide.
  • Another object of the present invention is to provide an organic electroluminescence display device comprising the above array substrate.
  • Another object of the present invention is to provide a method for fabricating the above array substrate, comprising the following steps:
  • the planarization layer has a refractive index greater than or equal to a refractive index of the first electrode layer.
  • the array substrate of the present invention, the method of preparing the same, the organic electroluminescence array substrate, and the substrate of the organic electroluminescence display device have a rough surface, which can scatter or diffract light on the rough surface of the substrate, thereby enhancing light extraction efficiency.
  • FIG. 1 is a schematic structural view of an array substrate in the prior art.
  • Embodiment 2 is a schematic structural view of an array substrate in Embodiment 1 of the present invention.
  • Embodiment 3 is a schematic structural view of an array substrate in Embodiment 1 of the present invention.
  • the embodiment provides an array substrate including a substrate 1 and a planarization layer 2, a first electrode layer 3, a light-emitting layer 4, and a second electrode layer 5, which are sequentially disposed on the substrate 1, wherein The first electrode layer 3 and the second electrode layer 5 are respectively located on both sides of the light-emitting layer 4, and the first electrode layer 3 and the second electrode layer 5 supply a voltage to the light-emitting layer 4, wherein the substrate 1 is close to one side of the light-emitting layer 4 As the inner side surface 11, the inner side surface 11 is a rough surface, and the first electrode layer 3 and the second electrode layer 5 may be a cathode electrode layer and an anode electrode layer, respectively.
  • the inner side surface 11 of the substrate 1 of the array substrate of the present invention is a rough surface, light (indicated by an arrow in FIG. 2) can be scattered or diffracted on the rough surface of the substrate 1, thereby enhancing light extraction efficiency.
  • the substrate 1 having a rough surface may be a commercially available glass substrate, or the glass may be roughened by a prior art processing method.
  • the roughness of the roughness of the rough surface is from 5 to 500 nm, where Ra is the arithmetic mean deviation of the profile.
  • the inner side surface 11 of the substrate 1 in FIG. 2 is a rough surface and cannot be in direct contact with the first electrode layer 3. Therefore, it is necessary to provide a planarization layer 2 between the first electrode layer 3 and the substrate 1 to prevent the substrate 1 from being The rough surface is in direct contact with the surface of the first electrode layer 3.
  • the refractive index of the planarization layer 2 is greater than or equal to the refractive index of the first electrode layer 3, such that the interface between the first electrode layer 3 and the planarization layer 2 Total reflection does not occur and does not cause light loss, thereby improving light extraction efficiency.
  • the first electrode layer 3 is made of an indium tin oxide (ITO) material, wherein the indium tin oxide has a refractive index of 1.8 to 1.9, it being understood that other materials may also be employed.
  • ITO indium tin oxide
  • the refractive index of the material of the planarization layer is selected according to the refractive index of the material of the first electrode layer 3, as long as the refractive index of the planarization layer 2 is greater than or equal to the refractive index of the first electrode layer 3 is applicable, preferably
  • the planarization layer 2 has a refractive index of 2.0 to 3.0.
  • the material of the planarization layer 2 is any one of ZrO 2 , TiO 2 , Ta 2 O 5 , and Nb 2 O 5 .
  • the planarization layer 2 is formed by using TiO 2 having a refractive index of 2.55-2.70. .
  • the material of the planarization layer 2 may also be a fluorinated polyimide, wherein the fluorinated polyimide has a refractive index of 2.0. It should be understood that it is also possible to fabricate a planarization layer using other materials in the prior art, for example, a sulfur-containing polymer, a high refractive index inorganic nanocomposite polymer material, as long as the refractive index of the material is greater than or equal to the first The refractive index of the electrode layer 3 may be sufficient.
  • planarization layer 2 when the planarization layer 2 is formed using an inorganic material, precipitation may be performed by a corresponding method in the prior art, for example, plasma vapor deposition or the like.
  • planarization layer 2 when the planarization layer 2 is formed using an organic material, it can be applied by a corresponding method in the prior art, for example, spin coating or the like.
  • the preparation of other functional layers of the array substrate belongs to the prior art and will not be further described herein.
  • the substrate 1 when the substrate 1 may have two rough surfaces, for example, the other side surface of the substrate 1 is the outer side surface 12, which is a rough surface. This further reduces the total reflection of the interface between the substrate 1 and the air, and improves the light extraction efficiency.
  • This embodiment provides a method for preparing the above array substrate, which includes the following steps:
  • the substrate 1 in the present embodiment is a glass substrate, and the glass may be roughened by a prior art processing method, for example, grinding wheel polishing or hydrogen fluoride solution etching, etc., and controlling the roughness Ra of the rough surface to be in the range of 5-500 nm. Inside, where Ra is the contour arithmetic mean deviation.
  • the glass substrate of the present embodiment is formed by a grinding wheel method to form a glass substrate having a rough surface, wherein the Ra of the glass substrate has a roughness of 300 nm.
  • a glass substrate having a rough surface may be a commercially available glass substrate having a rough surface; a substrate prepared for other materials may have a specific roughness in the preparation process by a known method, and no longer One by one.
  • the refractive index of the material of the planarization layer 2 is selected according to the refractive index of the material of the first electrode layer 3 to be formed thereon, and the material of the first electrode layer 3 to be formed in this embodiment is indium tin oxide, which Since the refractive index is 1.8 to 1.9, the refractive index of the planarization layer 2 may be 2.0 to 3.0, and the material of the planarization layer 2 may be any of ZrO 2 , TiO 2 , Ta 2 O 5 , and Nb 2 O 5 .
  • a planarization layer is formed using TiO 2 having a refractive index of 2.55 to 2.70.
  • the planarization layer 2 is prepared by a known vapor deposition method.
  • the material of the planarization layer 2 may also be a fluorinated polyimide in which the refractive index of the fluorinated polyimide is 2.0.
  • planarization layer 2 may also be fabricated using other materials in the prior art, for example, using a sulfur-containing polymer, a high refractive index inorganic nanocomposite polymer material, as long as the refractive index of the material is greater than or equal to the first The refractive index of one electrode layer may be sufficient.
  • the first electrode layer 3 is prepared using an indium tin oxide (ITO) material, and the indium tin oxide has a refractive index of 1.8 to 1.9.
  • ITO indium tin oxide
  • the indium tin oxide electrode layer 3 is prepared by a known sputtering process. It should be understood that the first electrode layer 3 may also adopt other materials in the prior art as long as the refractive index thereof is smaller than the refractive index of the planarization layer, which is not limited herein.
  • the other functional layers of the array substrate are prepared by known techniques and will not be further described herein.
  • the embodiment provides an organic electroluminescence display device comprising the above-described organic electroluminescence array substrate.

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Abstract

一种阵列基板及其制备方法和一种有机电致发光显示装置，属于显示技术领域，其可解决现有的阵列基板、有机电致发光显示装置存在出光效率低的问题。该阵列基板、有机电致发光显示装置包括衬底（1）和设置在衬底（1）上的发光层（4），其中，该衬底（1）具有至少一个粗糙表面。该阵列基板、有机电致发光显示装置能够使光在衬底的粗糙表面上发生散射或衍射，增强出光效率。

Description

阵列基板及其制备方法、有机电致发光显示装置 技术领域
本发明属于显示技术领域，具体涉及阵列基板及其制备方法、和包括该阵列基板的有机电致发光显示装置。
背景技术
在有机发光二极管(Organic Electroluminesence Display,OLED)显示技术中，内量子效率可以达到100％，而外量子效率只有20％，其原因是由于OLED显示器件结构中的表面等离子模态、波导模态和衬底模态的共同作用，使得光在器件结构中难以发射出来。
如图1所示，传统的OLED器件结构包括衬底1和在衬底1上设置的发光层4、以及位于发光层4的上下两侧为发光层4提供电压的电极层，该电极层包括位于发光层4的出光侧(图1中的箭头方向，即发光层4的下侧)的第一电极层2，以及位于发光层4的另一侧(发光层4的上侧)的第二电极5。
发光层4的折射率为1.7-2.0、电极层(材料为Indium Tin Oxide，ITO)的折射率是1.8-1.9、衬底(玻璃)的折射率约为1.5。衬底模态对出光效率有较大的影响，这是因为光从高折射率的物质进入低折射的物质时，在两者的界面上会发生全反射现象；现有技术中电极层的折射率一般大于衬底(玻璃)的折射率，而衬底(玻璃)的折射率大于空气的折射率，这会造成在电极层/衬底、衬底/空气界面处容易发生全反射，从而限制了光从器件中传输出来以及发射效率。
发明内容
本发明的目的是解决现有技术的阵列基板、有机电致发光显示装置中存在由于电极层和衬底界面易发生全反射造成的出光效率低的问题，提供能提高出光效率的阵列基板、有机电致发光显 示装置。
解决本发明技术问题所采用的技术方案是一种阵列基板，包括衬底和设置在衬底上的发光层，所述衬底具有至少一个粗糙表面。
由于本发明的阵列基板的衬底具有粗糙表面，能够使光在衬底的粗糙表面上发生散射或衍射，增强出光效率。
优选的是，该阵列基板还包括：位于所述发光层靠近所述衬底一侧的第一电极层；和位于所述发光层另一侧的第二电极层，其中所述第一电极层和所述第二电极层为所述发光层提供电压。优选的是，所述第一电极层与衬底之间设有平坦化层，所述平坦化层与所述衬底的粗糙表面接触；所述平坦化层的折射率大于或等于所述第一电极层的折射率。由于平坦化层的折射率大于或等于电极层的折射率，使得第一电极层/平坦化层之间不发生全反射，提高了出光效率。这样进一步降低衬底与空气接触界面的全反射，提高出光效率。
优选的是，所述平坦化层的折射率为2.0-3.0，所述第一电极层的折射率为1.8-1.9。
优选的是，所述衬底的远离所述发光层的表面为粗糙表面。
优选的是，所述粗糙表面的粗糙度的Ra为5-500nm，其中，Ra为轮廓算术平均偏差。
优选的是，所述衬底为由二氧化硅、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚酰亚胺中的任意一种材料制作而成的基板。
优选的是，所述平坦化层的材料为ZrO2、TiO2、Ta2O5、Nb2O5中的任意一种。
优选的是，所述平坦化层的材料为氟化聚酰亚胺。
本发明的另一个目的是提供一种有机电致发光显示装置，所述有机电致发光显示装置包括上述的阵列基板。
本发明的另一个目的是提供一种上述阵列基板的制备方法，包括以下步骤：
1)制备具有至少一个粗糙表面的衬底；
2)在所述衬底的一侧粗糙表面上形成平坦化层；
3)在所述平坦化层上形成第一电极层；
4)在所述第一电极层上形成发光层；以及
5)在所述发光层上形成第二电极层。
优选的是，所述平坦化层的折射率大于或等于所述第一电极层的折射率。
本发明的阵列基板及其制备方法、有机电致发光阵列基板、有机电致发光显示装置的衬底具有粗糙表面，能够使光在衬底的粗糙表面上发生散射或衍射，从而增强出光效率。
附图说明
图1为现有技术中阵列基板的结构示意图。
图2为本发明实施例1中阵列基板的结构示意图。
图3为本发明实施例1中阵列基板的结构示意图。
其中：
1.衬底；11.内侧表面；12.外侧表面；2.平坦化层；3.第一电极层；4.发光层；5.第二电极层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1
如图2所示，本实施例提供一种阵列基板，包括衬底1和在衬底1上依次设置的平坦化层2、第一电极层3、发光层4和第二电极层5，其中第一电极层3和第二电极层5分别位于发光层4两侧，并且第一电极层3和第二电极层5为发光层4提供电压，其中，衬底1靠近发光层4的一侧为内侧表面11，内侧表面11为粗糙表面，并且第一电极层3和第二电极层5可以分别为阴极电极层和阳极电极层。
由于本发明的阵列基板的衬底1的内侧表面11为粗糙表面，因此能够使光(图2中用箭头表示)在衬底1的粗糙表面上发生散射或衍射，从而增强了出光效率。
应当理解的是，具有粗糙表面的衬底1可以采用市售的玻璃基板，也可以采用现有技术的加工方法对玻璃进行粗糙处理。粗糙表面的粗糙度的Ra为5-500nm，其中，Ra为轮廓算术平均偏差。
图2中衬底1的内侧表面11为粗糙表面，不能与第一电极层3直接接触，因此，需要在第一电极层3与衬底1之间设置平坦化层2，以防止衬底1的粗糙表面与第一电极层3的表面直接接触。为了避免平坦化层2与第一电极层3的界面发生全反射，平坦化层2的折射率大于或等于第一电极层3的折射率，使得第一电极层3与平坦化层2的界面不发生全反射，不会造成光损失，从而提高了出光效率。
通常，第一电极层3是采用氧化铟锡(ITO)材料制备，其中氧化铟锡的折射率为1.8-1.9，应当理解的是，也可以采用其它材料。
应当理解是，平坦化层的材料的折射率是根据第一电极层3材料的折射率选取的，只要平坦化层2的折射率大于或等于第一电极层3的折射率就是适用的，优选的，平坦化层2的折射率为2.0-3.0。
优选的，平坦化层2的材料为ZrO2、TiO2、Ta2O5、Nb2O5中的任意一种，本实施例中采用折射率为2.55-2.70的TiO2制作平坦化层2。
优选的，平坦化层2的材料也可以为氟化聚酰亚胺，其中氟化聚酰亚胺折射率为2.0。应当理解的是，采用现有技术中的其它材料制作平坦化层也是可以的，例如，采用含硫聚合物、高折射率无机纳米复合聚合物材料，只要该材料的折射率大于或等于第一电极层3的折射率即可。
应当理解的是，当采用无机材料制作平坦化层2时，可以采用现有技术的中相应的方法进行沉淀，例如，等离子气相沉积等。 当采用有机材料制作平坦化层2时，可以采用现有技术的中相应的方法进行涂覆，例如，旋涂等。阵列基板的其它功能层的制备属于现有技术范畴，在此不再一一赘述。
应当理解的是，如图3所示，当衬底1也可以具有两个粗糙表面，例如，衬底1的另一侧表面为外侧表面12，所述外侧表面为粗糙表面。这样进一步降低衬底1与空气接触界面的全反射，提高出光效率。
实施例2
本实施例提供一种上述阵列基板的制备方法，包括以下步骤：
1)制备至少具有一个粗糙表面的衬底1；
本实施中的衬底1为玻璃基板，也可以采用现有技术的加工方法对玻璃进行粗糙处理，例如，砂轮打磨或氟化氢溶液腐蚀等，将粗糙表面的粗糙度的Ra控制在5-500nm范围内，其中，Ra为轮廓算术平均偏差。本实施例的玻璃基板采用砂轮打磨的方法打造具有粗糙表面的玻璃基板，其中，玻璃基板的粗糙度的Ra为300nm。
应当理解的是，具有粗糙表面的玻璃基板可以采用市售的具有粗糙表面的玻璃基板；对于其它材料制备的基板可以在制备过程采用已知方法使其表面具有特定的粗糙度，在此不再一一赘述。
2)在所述衬底1的一侧粗糙表面上形成平坦化层2；
平坦化层2的材料的折射率是根据将要在其上形成的第一电极层3的材料的折射率选取的，本实施例中将要形成的第一电极层3的材料为氧化铟锡，其折射率为1.8-1.9，故平坦化层2的折射率可以为2.0-3.0，平坦化层2的材料可以采用ZrO2、TiO2、Ta2O5、Nb2O5中的任意一种。
本实施例中采用折射率为2.55-2.70的TiO2制作平坦化层。采用已知的气相沉积的方法制备平坦化层2。
当然，平坦化层2的材料也可以为氟化聚酰亚胺，其中氟化聚酰亚胺折射率为2.0。
应当理解的是，也可以采用现有技术中的其它材料来制作平坦化层2，例如，采用含硫聚合物、高折射率无机纳米复合聚合物材料，只要该材料的折射率大于或等于第一电极层的折射率即可。
3)在所述平坦化层2上形成第一电极层3。
本实施例采用氧化铟锡(ITO)材料制备第一电极层3，氧化铟锡的折射率为1.8-1.9。采用已知的溅射工艺制备氧化铟锡电极层3。应当理解的是，第一电极层3也可以采用现有技术中的其它材料，只要其折射率小于平坦化层的折射率即可，在此不作限定。
阵列基板的其它功能层采用已知技术进行制备，在此不再一一赘述。
实施例3
本实施例提供一种有机电致发光显示装置，所述有机电致发光显示装置包括上述的有机电致发光阵列基板。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (18)

  1. 一种阵列基板，包括衬底和设置在衬底上的发光层，其特征在于，所述衬底具有至少一个粗糙表面。
  2. 如权利要求1所述的阵列基板，其特征在于，还包括：位于所述发光层靠近所述衬底一侧的第一电极层；和位于所述发光层另一侧的第二电极层，其中所述第一电极层和所述第二电极层为所述发光层提供电压。
  3. 如权利要求2所述的阵列基板，其特征在于，所述衬底靠近所述第一电极层的表面为粗糙表面。
  4. 如权利要求3所述的阵列基板，其特征在于，所述第一电极层与衬底之间设有平坦化层，所述平坦化层与所述衬底的粗糙表面接触；所述平坦化层的折射率大于或等于所述第一电极层的折射率。
  5. 如权利要求4所述的阵列基板，其特征在于，所述平坦化层的折射率为2.0-3.0，所述第一电极层的折射率为1.8-1.9。
  6. 如权利要求1-5中任一项所述的阵列基板，其特征在于，所述衬底的远离所述发光层的表面为粗糙表面。
  7. 如权利要求6所述的阵列基板，其特征在于，所述粗糙表面的粗糙度的Ra为5-500nm，其中，Ra为轮廓算术平均偏差。
  8. 如权利要求1-5中任一项所述的阵列基板，其特征在于，所述衬底为由二氧化硅、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚酰亚胺中的任意一种材料制作而成的基板。
  9. 如权利要求4或5所述阵列基板，其特征在于，所述平坦化层的材料为ZrO2、TiO2、Ta2O5、Nb2O5中的任意一种。
  10. 如权利要求4或5所述阵列基板，其特征在于，所述平坦化层的材料为氟化聚酰亚胺。
  11. 一种有机电致发光显示装置，其特征在于，所述有机电致发光显示装置包括如权利要求1-10中任一项所述的阵列基板。
  12. 一种阵列基板的制备方法，其特征在于，包括以下步骤：
    1)制备具有至少一个粗糙表面的衬底；
    2)在所述衬底的一侧粗糙表面上形成平坦化层；
    3)在所述平坦化层上形成第一电极层；
    4)在所述第一电极层上形成发光层；以及
    5)在所述发光层上形成第二电极层。
  13. 如权利要求12所述的制备方法，其特征在于，所述平坦化层的折射率大于或等于所述第一电极层的折射率。
  14. 如权利要求13所述的制备方法，其特征在于，所述平坦化层的折射率为2.0-3.0，所述第一电极层的折射率为1.8-1.9。
  15. 如权利要求12所述的制备方法，其特征在于，所述粗糙表面的粗糙度的Ra为5-500nm，其中，Ra为轮廓算术平均偏差。
  16. 如权利要求12-15中任一项所述的制备方法，其特征在于，所述衬底由二氧化硅、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚酰亚胺中的任意一种材料制成。
  17. 如权利要求12-15中任一项所述的制备方法，其特征在于，所述平坦化层由ZrO2、TiO2、Ta2O5、Nb2O5中的任意一种材料制成。
  18. 如权利要求12-15中任一项所述的制备方法，其特征在于，所述平坦化层由氟化聚酰亚胺材料制成。
PCT/CN2014/088597 2014-03-17 2014-10-15 阵列基板及其制备方法、有机电致发光显示装置 WO2015139449A1 (zh)

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CN103887237A (zh) * 2014-03-17 2014-06-25 京东方科技集团股份有限公司 一种阵列基板及其制备方法、有机电致发光显示装置
CN104315991B (zh) * 2014-10-31 2017-12-15 合肥鑫晟光电科技有限公司 基板的翘曲度的测量装置及测量方法、触摸屏及制作方法
CN104701466B (zh) * 2015-03-25 2018-09-04 京东方科技集团股份有限公司 阵列基板及其制备方法和显示装置
CN105304827A (zh) * 2015-11-02 2016-02-03 固安翌光科技有限公司 一种oled器件
JP2018067414A (ja) * 2016-10-18 2018-04-26 ＯＬＥＤ Ｍａｔｅｒｉａｌ Ｓｏｌｕｔｉｏｎｓ株式会社 電子デバイス用基板のマザー基板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352956A (ja) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp 薄膜型発光体及びその製造方法
CN1653856A (zh) * 2002-03-29 2005-08-10 三星Sdi株式会社 发光器件、其制备方法和使用该器件的显示装置
CN1838448A (zh) * 2005-03-25 2006-09-27 精工爱普生株式会社 发光装置
CN102623647A (zh) * 2012-04-05 2012-08-01 四川虹视显示技术有限公司 有机电致发光器件的制造方法及基板
CN103887237A (zh) * 2014-03-17 2014-06-25 京东方科技集团股份有限公司 一种阵列基板及其制备方法、有机电致发光显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120127515A (ko) * 2004-05-26 2012-11-21 닛산 가가쿠 고교 가부시키 가이샤 면발광체
CN101165912A (zh) * 2006-10-16 2008-04-23 悠景科技股份有限公司 有机电致发光显示元件的彩色滤光片结构
US9024312B2 (en) * 2009-09-30 2015-05-05 Dai Nippon Printing Co., Ltd. Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
CN203950806U (zh) * 2014-03-17 2014-11-19 京东方科技集团股份有限公司 一种阵列基板、有机电致发光显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352956A (ja) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp 薄膜型発光体及びその製造方法
CN1653856A (zh) * 2002-03-29 2005-08-10 三星Sdi株式会社 发光器件、其制备方法和使用该器件的显示装置
CN1838448A (zh) * 2005-03-25 2006-09-27 精工爱普生株式会社 发光装置
CN102623647A (zh) * 2012-04-05 2012-08-01 四川虹视显示技术有限公司 有机电致发光器件的制造方法及基板
CN103887237A (zh) * 2014-03-17 2014-06-25 京东方科技集团股份有限公司 一种阵列基板及其制备方法、有机电致发光显示装置

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