WO2018228107A1 - 有机发光器件及其制作方法 - Google Patents

有机发光器件及其制作方法 Download PDF

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Publication number
WO2018228107A1
WO2018228107A1 PCT/CN2018/086708 CN2018086708W WO2018228107A1 WO 2018228107 A1 WO2018228107 A1 WO 2018228107A1 CN 2018086708 W CN2018086708 W CN 2018086708W WO 2018228107 A1 WO2018228107 A1 WO 2018228107A1
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WIPO (PCT)
Prior art keywords
light
layer
emitting
protective film
emitting device
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PCT/CN2018/086708
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English (en)
French (fr)
Inventor
郭远征
宋平
王有为
王涛
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京东方科技集团股份有限公司
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Priority to US16/323,336 priority Critical patent/US11394012B2/en
Publication of WO2018228107A1 publication Critical patent/WO2018228107A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • Embodiments of the present invention relate to an organic light emitting device and a method of fabricating the same.
  • Flat panel displays (F1at Pane1 Disp1ay, FPD) have become mainstream products on the market, and there are more and more types of flat panel displays, such as liquid crystal displays (Liquid Crysta1 Disp1ay, LCD), Organic Light Emitted Diode (OLED) displays. , plasma display panel (P1asma Disp1ay Pane1, PDP) and Field Emission Display (FED).
  • liquid crystal displays Liquid Crysta1 Disp1ay, LCD
  • OLED Organic Light Emitted Diode
  • P1asma Disp1ay Pane1, PDP Plasma display panel
  • FED Field Emission Display
  • the OLED display is called a fantasy display. It has the advantages of all solid state, flexible, wide color gamut, wide viewing angle and fast response. It has broad development prospects in the fields of display and illumination.
  • the OLED device generally consists of a substrate substrate, an anode, a cathode, an organic light-emitting layer between the two electrodes, and a package structure. Since the refractive indices of the layers are different, the light is transmitted in a waveguide at a part of the interface of the device. Further reflection and refraction occur and eventually dissipate light inside the device. Therefore, only 20% of the light of the OLED device is taken out, and there is a problem that the light extraction efficiency is low.
  • Embodiments of the present invention provide an organic light emitting device and a method of fabricating the same to improve light extraction efficiency of an organic light emitting device.
  • An embodiment of the present invention provides an organic light-emitting device.
  • the organic light-emitting device is provided with a transparent light-emitting member including at least a light-emitting layer on a light-emitting side, and at least one surface of the light-emitting layer has a first wave shape.
  • the light-emitting member further includes: a topographic protective film layer disposed on the light-emitting layer and in contact with the light-emitting layer, wherein the light-emitting layer faces the one side of the topographic protective film layer a wavy shape; a side of the topographic protective film layer facing the light-emitting layer has a second wave shape, and the second wave-shaped pattern is complementary to the first wave-shaped pattern; the topographic protective film The side of the layer facing away from the light exiting layer has a third wave shape.
  • the material of the topography protective film layer is silicon oxide or silicon nitride.
  • the light-emitting member further includes: a flat layer disposed on the topography protective film layer and in contact with the topography protective film layer; a side of the flat layer facing the topographic protective film layer In a fourth wavy shape, the fourth wavy pattern is complementary to the third wavy pattern; a side of the flat layer facing away from the topographical protective film layer is planar.
  • the organic light emitting device is a bottom emission organic light emitting device
  • the light emitting member is a base substrate of the organic light emitting device.
  • the organic light emitting device is a bottom emission organic light emitting device, the organic light emitting device further comprising: a substrate substrate and a thin film transistor layer disposed over the substrate; the light emitting member is disposed on the substrate Between the substrate and the thin film transistor layer.
  • the embodiment of the invention further provides a method for fabricating an organic light emitting device, the method comprising:
  • a transparent light-emitting member including at least a light-emitting layer is formed on a light-emitting side of the organic light-emitting device, and at least one surface of the light-emitting layer has a first wave shape.
  • the transparent light-emitting member including at least the light-emitting layer on the light-emitting side of the organic light-emitting device includes: providing a carrier; adjusting the moving speed at the time of coating by the coating device, the discharge amount at the corresponding position, or coating The distance between the cloth cutter head and the carrier plate forms a light exiting layer having a first wave shape on the surface.
  • the manufacturing method further includes: depositing an inorganic layer on the light-emitting layer as a topographic protective film layer to make the topographic protective film a side of the layer facing the light-emitting layer has a second wave shape, and a side of the topographic protective film layer facing away from the light-emitting layer has a third wave shape, and the second wave-shaped pattern and the first wave The wavy patterns complement each other.
  • the manufacturing method further includes: coating the topographic protective film layer on the topography protective film layer Contacting the flat layer and planarizing the flat layer such that one side of the flat layer facing the topographic protective film layer has a fourth wave shape, the flat layer facing away from the topography protection One side of the film layer is planar, and the fourth wave-shaped pattern is complementary to the third wave-shaped pattern.
  • the beneficial effects of the embodiments of the present invention are as follows: by providing a transparent light-emitting member on the light-emitting side of the organic light-emitting device, the light-emitting member includes at least a light-emitting layer, and at least one surface of the light-emitting layer has a first wave shape, and the light-like interface can prevent the light from being parallel
  • the method is to reflect back and forth at the interface, thereby preventing the light from propagating in the form of a waveguide at the interface of the device, reducing the optical loss when the light is reflected back and forth at the interface, and improving the light extraction efficiency of the organic light emitting device.
  • FIG. 1 is a schematic structural diagram of a bottom emission organic light emitting device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a light-emitting member including a light-emitting layer according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a light-emitting member including a light-emitting layer and a topographic protective film layer according to an embodiment of the present invention
  • FIG. 4 is a schematic structural view of a light-emitting member including a light-emitting layer, a topographic protective film layer, and a flat layer according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of a bottom emission organic light emitting device according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of another bottom emission organic light emitting device according to an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a top emission organic light emitting device according to an embodiment of the present invention.
  • FIG. 8 is a flowchart of fabricating an organic light emitting device according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural view of a light-emitting layer prepared on a carrier board according to an embodiment of the present invention.
  • FIG. 10 is a schematic structural view showing preparation of a topographic protective film layer on a carrier according to an embodiment of the present invention
  • Figure 11 is a schematic view showing the structure of a flat layer prepared on a carrier in an embodiment of the present invention.
  • an embodiment of the present invention provides an organic light emitting device including: a light emitting member 1 , a thin film transistor layer 2 disposed on the light emitting member 1 , and a light emitting layer 3 disposed on the thin film transistor layer 2 .
  • the light emitting layer may include an anode layer, an organic material layer, and a cathode layer), and an encapsulation layer 4 disposed on the light emitting layer 3.
  • the organic light emitting device emits light in a direction in which AB is directed.
  • the light-emitting member 1 includes at least one light-emitting layer 11, and at least one surface of the light-emitting layer 11 has a first wave shape.
  • one surface of the light-emitting layer may be in a first wave shape, or both surfaces of the light-emitting layer may be in a first wave shape, for example, in order to improve light extraction efficiency of the organic light-emitting device and simplify organic
  • the light-emitting layer of the organic light-emitting device has a first wave-shaped surface, and the surface of the light-emitting layer facing away from the bottom of the organic light-emitting device has a first wave shape.
  • the light-emitting member may directly serve as a base substrate of the organic light-emitting device, for example, as shown in FIG. It can also be used as a separate component of the organic light-emitting device. If the light-emitting member is used as the base substrate of the organic light-emitting device, the side of the light-emitting layer facing the light-emitting layer has a first wave shape; if the light-emitting member is a separate component of the organic light-emitting device And disposed on the substrate, the light-emitting layer has a first wave shape on a side facing away from the substrate.
  • the surface of the light-emitting layer in the embodiment of the present invention refers to a surface perpendicular to the surface of the base substrate, that is, a film surface that is in contact with other functional film layers in the organic light-emitting device.
  • the shape of the first undulation may be a surface similar to a plurality of semi-prisms arranged side by side.
  • the light-emitting member 1 further includes: a topographical protective film layer 12 disposed on the light-emitting layer 11 and in contact with the light-emitting layer 11, and the light-emitting layer 11 facing the top surface of the topographical protective film 12 a wavy shape; a side of the topographic protective film layer 12 facing the light exiting layer 11 is in a second wave shape, and the second wave-shaped pattern is complementary to the first wave-shaped pattern, that is, for the topographical protective film layer 12,
  • the peak of the second wavy pattern of the protective film layer 12 is opposite to the valley of the first wavy pattern of the light-emitting layer 11, the trough of the second wavy pattern of the topographic protective film layer 12 and the first wavy shape of the light-emitting layer 11
  • the crests of the pattern are opposite.
  • the topography of the light-emitting layer 11 having the first wave-shaped surface may be protected, that is, the light-emitting member 1 is on the light-emitting layer 11
  • the first wavy surface may also be provided with a topographical protective film layer 12.
  • the upper surface 110 of the light-emitting layer 11 is disposed in a first wave shape, and the light-emitting member 1 is further disposed on the light-emitting layer 11 with a topographic protective film layer 12 in contact with the light-emitting layer 11.
  • the first wavy surface of the light exit layer 11 is protected.
  • the material of the topographic protective film layer may be silicon oxide or silicon nitride.
  • the topography protective film layer is silicon oxide or silicon nitride
  • the surface protective layer of the light layer can be protected from water and oxygen barrier properties and the life of the organic light emitting device can be improved while protecting the first wave-shaped surface topography of the light layer.
  • the side of the topographical protective film layer 12 facing away from the light-emitting layer has a third wave shape, which can further form a wavy interface of the light-emitting member 1 to further improve the organic water-emitting device while improving the water-proof property of the organic light-emitting device. Light extraction efficiency of the light emitting device.
  • a thin film of silicon oxide or silicon nitride may be deposited on the light-emitting layer 11 as the topography protective film layer 12.
  • the pattern of the third wavy shape may be the same as the pattern of the first wavy shape to simplify the manufacturing process of the light-emitting member.
  • the light-emitting member 1 further includes: a flat layer 13 disposed on the topography protective film layer 12 and in contact with the topographical protective film layer 12, and a side of the flat layer 13 facing the topographical protective film layer 12.
  • the fourth wavy pattern is complementary to the third wavy pattern; and one side of the flat layer 13 facing away from the topographical protective film layer 12 is planar. That is, in the light-emitting member provided by the embodiment of the present invention, in order not to affect the fabrication of other functional film layers of the organic light-emitting device, a flat layer may be disposed on the topography protective film layer.
  • FIG. 5 An overall structure diagram of an organic light-emitting device formed by a light-emitting member including a light-emitting member, a topography protective film layer, and a light-emitting member of a flat layer is shown in FIG. 5. It should be noted that the organic light-emitting device of the embodiment of the present invention is exemplified by a thin film transistor layer, but the embodiment of the present invention is not limited thereto.
  • FIG. 1 is an example in which an organic light-emitting device is used as a base-emitting device, and a light-emitting member is used as a substrate as an example.
  • the embodiment of the present invention is not limited thereto.
  • the light-emitting member 1 of the embodiment of the present invention may also be a separate component.
  • the organic light-emitting device further includes a substrate substrate 5 disposed on the light-emitting side of the bottom-emitting light-emitting device, and may be disposed between the base substrate 5 and the thin film transistor layer 2.
  • the thin film transistor layer 2 may be A composite layer comprising a plurality of film layers.
  • the organic light emitting device may also be a top emitting device.
  • the top emitting organic light emitting device includes, in order, a thin film transistor layer 2 disposed on the substrate substrate 5 and a light emitting layer disposed on the thin film transistor layer 2 . 3.
  • the encapsulation layer 4 is disposed on the luminescent layer 3, wherein the light is emitted in a direction indicated by BC, and the light-emitting member 1 is disposed on the light-emitting layer 3, and may be disposed between the luminescent layer and the encapsulation layer 4, or Directly as an encapsulation layer.
  • the material of the light-emitting layer of the light-emitting member may be polyimide (PI).
  • the material of the flat layer may also be PI, that is, the light-emitting layer 11 and the flat layer 13 of the light-emitting member 1 in the embodiment of the present invention are formed by a double coating process.
  • an embodiment of the present invention further provides a method for fabricating an organic light emitting device, which comprises:
  • Step 101 Form a transparent light-emitting member including at least a light-emitting layer on a light-emitting side of the organic light-emitting device, and at least one surface of the light-emitting layer has a first wave shape.
  • forming a transparent light-emitting member including at least a light-emitting layer on a light-emitting side of the organic light-emitting device includes:
  • a carrier board which may be a substrate substrate of the organic light emitting device, or a carrier carrier plate only when the light emitting member is fabricated (the light emitting member needs to be separated from the carrier plate later);
  • the light-emitting layer having the first wave shape on the surface is formed by adjusting the moving speed at the time of coating of the coating device, the discharge amount at the corresponding position, or the distance between the coater blade and the carrier.
  • the manufacturing method further includes Depositing an inorganic layer on top of the light-emitting layer as a topographic protective film layer, so that the side of the topographical protective film layer facing the light-emitting layer has a second wave shape, and the side of the topographic protective film layer facing away from the light-emitting layer is The third wave shape, the second wave pattern is complementary to the first wave pattern.
  • the manufacturing method further comprises: coating a flat layer in contact with the topographic protective film layer on the topographic protective film layer, and flattening
  • the layer is planarized such that one side of the planarized protective film layer of the flat layer has a fourth wave shape, and one side of the back layer of the planar protective layer of the flat layer is planar, the fourth wave pattern and the third wave
  • the shapes of the patterns are complementary.
  • a layer of PI material may be coated on the topographical protective film layer by a general coating method, and the PI material will be leveled to flatten the convex and concave surface.
  • the embodiment of the present invention provides a method for fabricating a first organic light emitting device.
  • the organic light emitting device is a flexible bottom emitting device, and the light emitting member is a substrate of the organic light emitting device.
  • the manufacturing method includes:
  • Step one by adjusting the coating speed of the coater in the corresponding region, the PI film layer is coated on the carrier 6 to form the light-emitting layer 11 having the first wavy surface.
  • the carrier plate can be a glass substrate. A schematic view of the light layer formed on the carrier is shown in FIG.
  • Step 2 depositing an SiO inorganic layer on the light-emitting layer 11 to form a topography protective film layer 12.
  • a schematic view of the formation of the topographic protective film layer is shown in FIG.
  • Step 3 coating a second PI film layer on the topography protective film layer 12 to form a flat layer 13, and using the three-layer structure including the light-emitting layer 11, the topographic protective film layer 12, and the flat layer 13 as light-emitting Component 1.
  • a schematic view after forming a flat layer over the topographical protective film layer is shown in FIG.
  • Step 4 separating the light-emitting member 1 from the carrier 6 to form the light-emitting member 1.
  • the embodiment of the present invention provides a method for fabricating a second organic light-emitting device.
  • the organic light-emitting device is a bottom-emitting device, and the light-emitting member is disposed between the substrate of the organic light-emitting device and the thin film transistor layer.
  • the manufacturing method includes:
  • Step one by adjusting the coating speed of the coater in the corresponding region, the PI film layer is coated on the carrier 6 to form the light-emitting layer 11 having the first wavy surface.
  • the carrier 6 may be a substrate of an organic light-emitting device, and the substrate may be a glass substrate, and a schematic view of the light layer formed on the substrate is as shown in FIG.
  • Step 2 depositing an SiO inorganic layer on the light-emitting layer 11 to form a topography protective film layer 12.
  • a schematic view of the formation of the topographic protective film layer is shown in FIG.
  • Step 3 coating a second PI film layer on the topography protective film layer 12 to form a flat layer 13, and using the three-layer structure including the light-emitting layer 11, the topographic protective film layer 12, and the flat layer 13 as light-emitting Component 1.
  • a schematic view of forming a light-emitting member over a base substrate is shown in FIG.
  • the light-emitting member of the second embodiment can be separated from the carrier, and the carrier can be directly used as the substrate of the organic light-emitting device, that is, the second embodiment of the present invention directly forms light on the substrate. member.
  • the embodiment of the present invention provides a transparent light-emitting member on the light-emitting side of the organic light-emitting device, wherein the light-emitting member includes at least a light-emitting layer, and at least one surface of the light-emitting layer has a first wave shape, due to the wave shape
  • the interface can prevent the light from being reflected back and forth at the interface in a parallel light manner, thereby preventing the light from propagating at the interface of the device in the form of a waveguide, reducing the light loss when the light is reflected back and forth at the interface, thereby improving the light of the organic light emitting device. Take out the efficiency.

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Abstract

一种有机发光器件及其制作方法，所述有机发光器件在出光侧设置有至少包括出光层(11)的透明出光构件，所述出光层(11)的至少一个表面呈第一波浪形。所述有机发光器件，由于波浪形的界面可以避免光以平行的方式在界面进行来回反射，进而避免光以波导的形式在器件的界面进行传播，减少光在界面发生来回反射时的光损耗，进而可以提高有机发光器件的光取出效率。

Description

有机发光器件及其制作方法
本申请要求于2017年6月12日递交的中国专利申请第201710437795.6号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本发明的实施例涉及一种有机发光器件及其制作方法。
背景技术
平面显示器(F1at Pane1 Disp1ay，FPD)己成为市场上的主流产品，平面显示器的种类也越来越多，如液晶显示器(Liquid Crysta1 Disp1ay，LCD)、有机发光二极管(Organic Light Emitted Diode，OLED)显示器、等离子体显示面板(P1asma Disp1ay Pane1，PDP)及场发射显示器(Field Emission Display，FED)等。
OLED显示器被称为梦幻显示器，具有全固态、可柔性化、色域广、视角宽、响应快的优点，在显示和照明等领域都有广泛的发展前景。OLED器件一般由衬底基板、阳极、阴极、两电极之间的有机发光层以及封装结构所组成，由于各层之间的折射率不同，使得光以波导的形式在器件的部分界面进行传输，并进一步发生反射和折射，并最终使光在器件内部耗散。因此，OLED器件只有20％的光被取出，存在光取出效率较低的问题。
发明内容
本发明实施例提供一种有机发光器件及其制作方法，以提高有机发光器件的光取出效率。
本发明实施例提供一种有机发光器件，所述有机发光器件在出光侧设置有至少包括出光层的透明出光构件，所述出光层的至少一个表面呈第一波浪形。
例如，所述出光构件还包括：设置在所述出光层之上且与所述出光层相 接触的形貌保护膜层，所述出光层面向所述形貌保护膜层的一面呈所述第一波浪形；所述形貌保护膜层的面向所述出光层的一面呈第二波浪形，所述第二波浪形的图案与所述第一波浪形的图案互补；所述形貌保护膜层的背向所述出光层的一面呈第三波浪形。
例如，所述形貌保护膜层的材质为氧化硅或氮化硅。
例如，所述出光构件还包括：设置在所述形貌保护膜层之上且与所述形貌保护膜层相接触的平坦层；所述平坦层的面向所述形貌保护膜层的一面呈第四波浪形，所述第四波浪形的图案与所述第三波浪形的图案互补；所述平坦层的背向所述形貌保护膜层的一面呈平面形。
例如，所述有机发光器件为底发射有机发光器件，所述出光构件为所述有机发光器件的衬底基板。
例如，所述有机发光器件为底发射有机发光器件，所述有机发光器件还包括：衬底基板以及设置在所述衬底基板之上的薄膜晶体管层；所述出光构件设置在所述衬底基板与所述薄膜晶体管层之间。
本发明实施例还提供一种有机发光器件的制作方法，所述制作方法包括：
在所述有机发光器件的出光侧形成至少包括出光层的透明出光构件，所述出光层的至少一个表面呈第一波浪形。
例如，所述在所述有机发光器件的出光侧形成至少包括出光层的透明出光构件，包括：提供一载板；通过调整涂布设备涂布时的移动速度、在相应位置的吐出量或涂布机刀头与所述载板之间的距离，形成具有表面呈第一波浪形的出光层。
例如，在所述形成具有表面呈波浪形的出光层之后，所述制作方法还包括：在所述出光层之上沉积一层无机层作为形貌保护膜层，以使所述形貌保护膜层的面向所述出光层的一面呈第二波浪形，所述形貌保护膜层的背向所述出光层的一面呈第三波浪形，所述第二波浪形的图案与所述第一波浪形的图案互补。
例如，在所述出光层之上沉积一层无机层作为形貌保护膜层之后，所述制作方法还包括：在所述形貌保护膜层之上，涂布与所述形貌保护膜层接触的平坦层，并对所述平坦层进行平坦化，以使所述平坦层的面向所述形貌保护膜层的一面呈第四波浪形，所述平坦层的背向所述形貌保护膜层的一面呈 平面形，所述第四波浪形的图案与所述第三波浪形的图案互补。
本发明实施例有益效果如下通过在有机发光器件的出光侧设置透明出光构件，出光构件至少包括出光层，而出光层的至少一个表面呈第一波浪形，由于波浪形的界面可以避免光以平行的方式在界面进行来回反射，进而避免光以波导的形式在器件的界面进行传播，减少光在界面发生来回反射时的光损耗，提高有机发光器件的光取出效率。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明实施例提供的一种底发射有机发光器件的结构示意图；
图2为本发明实施例提供的包括有出光层的出光构件的结构示意图；
图3为本发明实施例提供的包括有出光层以及形貌保护膜层的出光构件的结构示意图；
图4为本发明实施例提供的包括有出光层、形貌保护膜层以及平坦层的出光构件的结构示意图；
图5为本发明实施例提供的一种底发射有机发光器件的结构示意图；
图6为本发明实施例提供的另一种底发射有机发光器件的结构示意图；
图7为本发明实施例提供的一种顶发射有机发光器件的结构示意图；
图8为本发明实施例提供的一种有机发光器件的制作流程图；
图9为本发明实施例中，在载板上制备完成出光层的结构示意图；
图10为本发明实施例中，在载板上制备完成形貌保护膜层的结构示意图；
图11为本发明实施例中，在载板上制备完成平坦层的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描 述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
参见图1，本发明实施例提供一种有机发光器件，该有机发光器件包括：出光构件1、设置在出光构件1之上的薄膜晶体管层2、设置在薄膜晶体管层2之上的发光层3(发光层可以包括阳极层、有机材料层以及阴极层)、设置在发光层3之上的封装层4。该有机发光器件沿AB指向的方向进行出光。
对于出光构件1，参见图2所示，其至少包括一出光层11，出光层11的至少一个表面呈第一波浪形。在具体实施时，可以是出光层的一个表面呈第一波浪形，也可以是出光层的两个表面都呈第一波浪形，例如，为了能够提高有机发光器件的光取出效率且又简化有机发光器件的制作工艺，有机发光器件的出光层具有一个呈第一波浪形的表面，且出光层的背向有机发光器件底部的表面呈第一波浪形。在具体实施时，出光构件可以直接作为有机发光器件的衬底基板，例如，如图1所示。也可以作为有机发光器件的一个独立部件，若出光构件作为有机发光器件的衬底基板，则出光层的朝向发光层的一面呈第一波浪形；若出光构件作为有机发光器件的一个独立的部件，设置在衬底基板之上，则出光层在背向衬底基板的一面呈第一波浪形。另外，需要说明的是，本发明实施例中的出光层的表面是指垂直于衬底基板的表面，即，与有机发光器件中的其它功能膜层相接触的膜面。第一波浪形的形状可以为类似多个并列排列的半棱柱构成的表面。
例如，参见图3所示，出光构件1还包括：设置在出光层11之上且与出光层11相接触的形貌保护膜层12，出光层11面向形貌保护膜12层的一面 呈第一波浪形；形貌保护膜层12面向出光层11的一面呈第二波浪形，第二波浪形的图案与第一波浪形的图案互补，即，对于形貌保护膜层12而言，形貌保护膜层12的第二波浪形图案的波峰与出光层11的第一波浪形图案的波谷相对，形貌保护膜层12的第二波浪形图案的波谷与出光层11的第一波浪形图案的波峰相对。即，在本发明实施例中，为了使有机发光器件具有较高的光取出效率，可以对出光层11的具有第一波浪形的表面的形貌进行保护，即出光构件1在出光层11的第一波浪形的表面还可以设置有形貌保护膜层12。例如，参见图3所示，将出光层11的上表面110设置为第一波浪形，则出光构件1在出光层11之上还设置有与出光层11相接触的形貌保护膜层12，以对出光层11的第一波浪形的表面进行保护。
例如，形貌保护膜层的材质可以为氧化硅或氮化硅。形貌保护膜层为氧化硅或氮化硅时，可以在保护出光层的第一波浪形的表面形貌的同时，使形貌保护膜层具有水氧阻隔性能，提高有机发光器件的寿命。例如，形貌保护膜层12的背向出光层的一面呈第三波浪形，可以使出光构件1再形成一波浪形的界面，在提高有机发光器件的抗水氧性能的同时，进一步提升有机发光器件的光取出效率。例如，可以通过在出光层11之上沉积一层氧化硅或氮化硅薄膜作为形貌保护膜层12。例如，第三波浪形的图案可以与第一波浪形的图案相同，以简化出光构件的制作工序。
例如，参见图4，出光构件1还包括：设置在形貌保护膜层12之上且与形貌保护膜层12相接触的平坦层13，平坦层13的面向形貌保护膜层12的一面呈第四波浪形，第四波浪形的图案与第三波浪形的图案互补；平坦层13的背向形貌保护膜层12的一面呈平面形。即，本发明实施例提供的出光构件，为了不影响有机发光器件其它功能膜层的制作，在形貌保护膜层之上还可以设置平坦层。以出光构件包括发光层、形貌保护膜层、以及平坦层构成的出光构件形成的有机发光器件的整体结构图如图5所示。需要说明的是，本发明实施例的有机发光器件以含有薄膜晶体管层为例进行的举例说明，但本发明实施例并不以此为限。
需要说明的是，图1是以有机发光器件为底发射器件，且出光构件作为衬底基板为例，进行的举例说明，但本发明实施例并不以此为限。在具体实施时，参见图6，对于底发射有机发光器件，本发明实施例的出光构件1也 可以为独立的部件。其中，有机发光器件还包括衬底基板5，该出光构件1设置在底发射发光器件的出光侧，可以是设置在衬底基板5与薄膜晶体管层2之间，当然，薄膜晶体管层2可以是包括多个膜层的复合层。参见图7所示，对于有机发光器件也可以为顶发射器件，顶发射有机发光器件依次包括：设置在衬底基板5之上的薄膜晶体管层2、设置在薄膜晶体管层2之上的发光层3、设置在发光层3之上的封装层4，其中，光沿BC指示的方向进行出射，出光构件1设置在出光层3之上，可以设置在发光层与封装层4之间，也可以直接作为封装层。
出光构件的出光层的材质可以为聚酰亚胺(Polyimide，PI)。为方便出光构件的制作，平坦层的材质也可以为PI，即，通过两次涂覆的工艺形成本发明实施例中出光构件1的出光层11和平坦层13。
参见图8，本发明实施例还提供一种有机发光器件的制作方法，制作方法包括：
步骤101、在有机发光器件的出光侧形成至少包括出光层的透明出光构件，出光层的至少一个表面呈第一波浪形。
例如，在有机发光器件的出光侧形成至少包括出光层的透明出光构件，包括：
提供一载板，载板可以是有机发光器件的衬底基板，也可以是仅为制作出光构件时的一个承载载板(出光构件后期需要和该载板进行分离)；
通过调整涂布设备涂布时的移动速度、在相应位置的吐出量或涂布机刀头与载板之间的距离，形成具有表面呈第一波浪形的出光层。
例如，通过调整涂布设备涂布时的移动速度、在相应位置的吐出量或涂布机刀头与基板之间的距离，形成具有表面呈第一波浪形的出光层之后，制作方法还包括：在出光层之上沉积一层无机层作为形貌保护膜层，以使形貌保护膜层的面向出光层的一面呈第二波浪形，形貌保护膜层的背向出光层的一面呈第三波浪形，第二波浪形的图案与第一波浪形的图案互补。
例如，在出光层之上沉积一层无机层作为形貌保护膜层之后，制作方法还包括：在形貌保护膜层之上，涂布与形貌保护膜层接触的平坦层，并对平坦层进行平坦化，以使平坦层的面向形貌保护膜层的一面呈第四波浪形，平坦层的背向形貌保护膜层的一面呈平面形，第四波浪形的图案与第三波浪形 的图案互补。可以通过一般的涂布方法在形貌保护膜层上涂布一层PI材料，PI材料会流平，将凸凹膜面平坦化。
为了更详细的对本发明实施例提供的有机发光器件的制作方法进行说明，结合附图9至附图11举例如下：
实施例一
本发明实施例提供第一种有机发光器件的制作方法，有机发光器件为柔性底发射器件，出光构件为有机发光器件的衬底基板，该制作方法包括：
步骤一，通过调整涂布机在相应区域的涂布速度，在载板6上涂覆PI膜层，形成具有第一波浪形表面的出光层11。载板可以为玻璃基板。在载板上形成出光层后的示意图如图9所示。
步骤二、在出光层11之上沉积SiO无机层，以形成形貌保护膜层12。形成形貌保护膜层后的示意图如图10所示。
步骤三、在形貌保护膜层12之上涂布第二层PI膜层，以形成平坦层13，将包括有出光层11、形貌保护膜层12以及平坦层13的三层结构作为出光构件1。在形貌保护膜层之上形成平坦层后的示意图如图11所示。
步骤四、将出光构件1从载板6上分离，形成出光构件1。
当然，在将出光构件从载板上分离之前，还可以在平坦层之上形成有机发光器件的其它功能膜层。
实施例二
本发明实施例提供第二种有机发光器件的制作方法，有机发光器件为底发射器件，出光构件设置在有机发光器件的衬底基板与薄膜晶体管层之间，该制作方法包括：
步骤一，通过调整涂布机在相应区域的涂布速度，在载板6上涂覆PI膜层，形成具有第一波浪形表面的出光层11。载板6可以是有机发光器件的衬底基板，衬底基板可以为玻璃基板，在衬底基板之上形成出光层后的示意图如图9所示。
步骤二、在出光层11之上沉积SiO无机层，以形成形貌保护膜层12。形成形貌保护膜层后的示意图如图10所示。
步骤三、在形貌保护膜层12之上涂布第二层PI膜层，以形成平坦层13，将包括有出光层11、形貌保护膜层12以及平坦层13的三层结构作为出光构 件1。在衬底基板之上形成出光构件的示意图如图11所示。
当然，还可以在平坦层之上形成有机发光器件的其它功能膜层。相比于实施例一，实施例二的出光构件可以不用从载板分离下去，载板可以直接作为有机发光器件的衬底基板，即，本发明实施例二直接在衬底基板之上形成出光构件。
本发明实施例有益效果包括：本发明实施例通过在有机发光器件的出光侧设置透明出光构件，其中，出光构件至少包括出光层，而出光层的至少一个表面呈第一波浪形，由于波浪形的界面可以避免光以平行光的方式在界面进行来回反射，进而避免光以波导的形式在器件的界面进行传播，减少光在界面发生来回反射时的光损耗，进而可以提高有机发光器件的光取出效率。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。

Claims (10)

  1. 一种有机发光器件，其中，所述有机发光器件在出光侧设置有至少包括出光层的透明出光构件，所述出光层的至少一个表面呈第一波浪形。
  2. 如权利要求1所述的有机发光器件，其中，所述出光构件还包括：设置在所述出光层之上且与所述出光层相接触的形貌保护膜层，所述出光层面向所述形貌保护膜层的一面呈所述第一波浪形；
    所述形貌保护膜层的面向所述出光层的一面呈第二波浪形，所述第二波浪形的图案与所述第一波浪形的图案互补；所述形貌保护膜层的背向所述出光层的一面呈第三波浪形。
  3. 如权利要求2所述的有机发光器件，其中，所述形貌保护膜层的材质为氧化硅或氮化硅。
  4. 如权利要求2所述的有机发光器件，其中，所述出光构件还包括：设置在所述形貌保护膜层之上且与所述形貌保护膜层相接触的平坦层；
    所述平坦层的面向所述形貌保护膜层的一面呈第四波浪形，所述第四波浪形的图案与所述第三波浪形的图案互补；所述平坦层的背向所述形貌保护膜层的一面呈平面形。
  5. 如权利要求1-4任一项所述的有机发光器件，其中，所述有机发光器件为底发射有机发光器件，所述出光构件为所述有机发光器件的衬底基板。
  6. 如权利要求1-4任一项所述的有机发光器件，其中，所述有机发光器件为底发射有机发光器件，所述有机发光器件还包括：衬底基板以及设置在所述衬底基板之上的薄膜晶体管层；
    所述出光构件设置在所述衬底基板与所述薄膜晶体管层之间。
  7. 一种有机发光器件的制作方法，包括：
    在所述有机发光器件的出光侧形成至少包括出光层的透明出光构件，所述出光层的至少一个表面呈第一波浪形。
  8. 如权利要求7所述的制作方法，其中，所述在所述有机发光器件的出光侧形成至少包括出光层的透明出光构件，包括：
    提供一载板；
    通过调整涂布设备涂布时的移动速度、在相应位置的吐出量或涂布机刀 头与所述载板之间的距离，形成具有表面呈第一波浪形的出光层。
  9. 如权利要求8所述的制作方法，其中，在所述形成具有表面呈第一波浪形的出光层之后，所述制作方法还包括：
    在所述出光层之上沉积一层无机层作为形貌保护膜层，以使所述形貌保护膜层的面向所述出光层的一面呈第二波浪形，所述形貌保护膜层的背向所述出光层的一面呈第三波浪形，所述第二波浪形的图案与所述第一波浪形的图案互补。
  10. 如权利要求9所述的制作方法，其中，在所述出光层之上沉积一层无机层作为形貌保护膜层之后，所述制作方法还包括：
    在所述形貌保护膜层之上，涂布与所述形貌保护膜层接触的平坦层，并对所述平坦层进行平坦化，以使所述平坦层的面向所述形貌保护膜层的一面呈第四波浪形，所述平坦层的背向所述形貌保护膜层的一面呈平面形，所述第四波浪形的图案与所述第三波浪形的图案互补。
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