WO2016050023A1 - 有机电致发光器件及其制备方法和具有该器件的显示器 - Google Patents

有机电致发光器件及其制备方法和具有该器件的显示器 Download PDF

Info

Publication number
WO2016050023A1
WO2016050023A1 PCT/CN2015/071811 CN2015071811W WO2016050023A1 WO 2016050023 A1 WO2016050023 A1 WO 2016050023A1 CN 2015071811 W CN2015071811 W CN 2015071811W WO 2016050023 A1 WO2016050023 A1 WO 2016050023A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
organic electroluminescent
electroluminescent device
metal layer
organic light
Prior art date
Application number
PCT/CN2015/071811
Other languages
English (en)
French (fr)
Inventor
陈鹏
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/777,799 priority Critical patent/US20160293887A1/en
Publication of WO2016050023A1 publication Critical patent/WO2016050023A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of organic electroluminescence (OLED) technology, and more particularly to an inverted organic electroluminescence (OLED) device, a method of fabricating the same, and a display having the same.
  • OLED organic electroluminescence
  • OLED inverted organic electroluminescence
  • OLED devices are typically sandwich structures. Since the material of the organic layer is sensitive to water oxygen, the life of the OLED device is drastically reduced after contact with water and oxygen, and how to prolong the life of the OLED device is currently a problem faced by various manufacturers.
  • a method of improving the sealing property of the package glass may be employed, such as changing the UV sealant sealing substrate glass and the cover glass to a glass powder, or by placing a dry sheet in the cover glass.
  • some of these methods require the use of expensive special equipment, such as laser equipment for melting glass powder, which has a long process time; some require secondary processing of the cover glass, and it is impossible to use a glass with a small thickness to achieve flat panel display. The need for thin and light.
  • the present invention is directed to overcoming or alleviating at least one or more of the technical problems described above in the prior art.
  • At least one object of the present invention is to provide an organic electroluminescent device (OLED) device.
  • OLED organic electroluminescent device
  • Another object of the present invention is to provide a method of fabricating an OLED device.
  • an organic electroluminescence (OLED) device which may include, in order from bottom to top, a substrate, a cathode layer, an organic light-emitting layer, a metal layer and an anode layer, wherein:
  • a metal layer is formed between the organic light emitting layer and the anode layer.
  • a passivation layer is further included between the metal layer and the anode layer, and the passivation layer is obtained by oxidizing a part of the metal layer when the anode layer is formed.
  • the metal layer is an aluminum layer and the passivation layer is an Al 2 O 3 passivation layer.
  • the metal layer may have a thickness of 10 to 15 nm.
  • the metal layer is an optical semi-permeable layer and together with the cathode layer constitutes a micro-resonator.
  • the organic electroluminescent device further comprises an electron injecting and transporting layer disposed between the cathode layer and the organic light emitting layer.
  • the electron injection and transport layers function as both electron injection and transport.
  • the electron injecting and transporting layer may further include an electron injecting sublayer and an electron transporting sublayer.
  • the organic electroluminescent device further includes a hole transporting and implanting layer disposed between the organic light emitting layer and the metal layer.
  • the hole transport and implant layers function as both hole injection and transport.
  • the hole transport and injection layer may further include a hole injection sublayer and a hole transport sublayer.
  • the electron injecting and transporting layer and the organic light emitting layer are made of a material having a low work function
  • the hole transporting and injecting layer is made of a material having a high work function
  • the cathode layer may be made of a lithium aluminum alloy and has a thickness of 200 to 300 nm.
  • the anode layer may be made of indium tin oxide.
  • the organic electroluminescent device is a top emitting device.
  • a method of fabricating an organic electroluminescent device comprising at least the following steps:
  • Step 1 forming a cathode layer on the substrate
  • Step 2 forming an organic light-emitting layer on the cathode layer
  • Step 3 forming a metal layer on the organic light-emitting layer
  • step 4 an anode layer is formed on the metal layer.
  • a part of the metal layer is oxidized to form a passivation layer while forming the anode layer.
  • the metal layer is an aluminum layer and the passivation layer is an Al 2 O 3 passivation layer.
  • the metal layer may have a thickness of 10 to 15 nm.
  • the metal layer is an optical semi-permeable layer and together with the cathode layer constitutes a micro-resonator.
  • an electron injecting and transporting layer is formed on the cathode layer prior to the step of forming the organic light emitting layer.
  • the hole transport and implant layers function as both hole injection and transport.
  • the hole transport and injection layer may further include an empty The hole injects the sublayer and the hole transporting sublayer.
  • a hole transporting and injecting layer is formed on the organic light emitting layer before the step of forming a metal layer.
  • the hole transport and implant layers function as both hole injection and transport.
  • the hole transport and injection layer may further include a hole injection sublayer and a hole transport sublayer.
  • the cathode layer may be made of a lithium aluminum alloy and has a thickness of 200 to 300 nm.
  • the anode layer may be made of indium tin oxide.
  • the organic electroluminescent device is a top emitting device.
  • a display comprising an organic electroluminescent device as described above.
  • the anode layer Due to the presence of the metal layer, damage to the organic light-emitting layer during formation of the anode layer can be reduced, and at the same time, the anode layer can effectively prevent water and oxygen from eroding the organic light-emitting layer, thereby greatly extending the OLED according to the embodiment of the present invention. The life of the device.
  • FIG. 1 is a schematic structural view of an OLED device according to an embodiment of the present invention.
  • FIG. 2 is a flow chart of a method of fabricating an OLED device in accordance with an embodiment of the present invention.
  • 1 is a substrate
  • 2 is The cathode layer
  • 3 is an electron injecting and transporting layer
  • 4 is an organic light emitting layer
  • 5 is a hole transporting and injecting layer
  • 6 is a metal layer
  • 7 is a passivation layer
  • 8 is an anode layer.
  • an organic electroluminescence (OLED) device in which a microcavity action and an inverted structure are integrated and a method of fabricating the same are provided.
  • the OLED device includes a substrate 1, a cathode layer 2, an electron injecting and transporting layer 3, an organic light emitting layer 4, a hole transporting and injecting layer 5, an aluminum layer 6, a passivation layer 7, and an anode layer from bottom to top. 8.
  • the metal layer 6 is formed between the hole transporting and injecting layer 5 and the anode layer 8.
  • the damage of the organic light-emitting layer 4 when the anode layer 8 is formed can be reduced, and at the same time, the anode layer 8 can effectively prevent the erosion of the organic light-emitting layer 4 by water and oxygen, thereby greatly extending the invention according to the present invention.
  • the lifetime of the OLED device of the embodiment Due to the presence of the metal layer 6, the damage of the organic light-emitting layer 4 when the anode layer 8 is formed can be reduced, and at the same time, the anode layer 8 can effectively prevent the erosion of the organic light-emitting layer 4 by water and oxygen, thereby greatly extending the invention according to the present invention.
  • the lifetime of the OLED device of the embodiment Due to the presence of the metal layer 6, the damage of the organic light-emitting layer 4 when the anode layer 8 is formed can be reduced, and at the same time, the anode layer 8 can effectively prevent the erosion of the organic light-emitting layer 4 by water and oxygen, thereby greatly extending the invention according to the present invention.
  • the metal layer 6 is an optically semi-permeable layer and together with the cathode layer 2 constitutes a micro-resonant cavity.
  • the optical semi-transmissive property is ensured by lowering the thickness of the metal layer 6, for example, the thickness of the metal layer 6 may be between 10 and 15 nm. Since the microresonator design is combined under the inverted structure, the intensity and color purity of the emitted light are improved.
  • the passivation layer 7 is obtained by oxidizing a portion of the metal layer 6 when the anode layer 8 is formed.
  • the metal layer 6 is an aluminum layer, such that the passivation layer 7 is correspondingly an Al 2 O 3 passivation layer.
  • the Al 2 O 3 passivation layer 7 in the hole transport and injection layer 5 and the anode layer 8, it is possible to reduce the implantation barrier and reduce the turn-on voltage of the OLED device, thereby reducing power consumption and protecting the organic layer. effect.
  • the aluminum layer is formed by evaporation and may have a thickness of 10 to 15 nm. In this way, a thin aluminum layer having a specific thickness can be obtained to ensure its optical semi-transmissive property, and also because the thickness is thin, and the transmission of holes is not affected.
  • the cathode layer 2 and the anode layer 8 are formed using a film formation process such as sputtering or evaporation.
  • top emission is employed, wherein the cathode layer 2 may be made of a low work function lithium aluminum alloy and may have a thickness of 200 to 300 nm; and the anode layer 8 may be made of indium tin oxide ITO.
  • the electron injecting and transporting layer 3, the organic light emitting layer 4, and the hole transporting and injecting layer 5 may be formed using a film forming process such as evaporation or wet.
  • the electron injection and transport layer 3 herein may be an electron injection and transport layer having both electron injection and transmission functions.
  • the electron injection sublayer and the electron transport sublayer may be further included.
  • the hole transport and injection layer 5 may be a layer of hole injection and transport layer having both hole injection and transport functions, and may further include A hole injection sublayer and a hole transport sublayer. Therefore, the OLED device according to the embodiment of the present invention is also easy to integrate with the existing mature sputtering ITO process.
  • the electron injecting and transporting layer 3 and the organic light emitting layer 4 may be made of a material having a low work function.
  • the hole injection and transport layer 5 may be made of a material having a high work function.
  • the substrate 1 is a glass substrate.
  • the inverted OLED device according to an embodiment of the present invention may be a top-emitting inverted OLED device; however, if necessary, a reflective layer may be added over the anode layer to achieve a bottom-emitting OLED device. design.
  • the embodiment of the present invention based on the structure of the above-described inverted OLED device, firstly, due to the presence of the metal layer 6, damage to the organic light-emitting layer 4 at the time of formation of the anode layer 8 can be reduced, and at the same time, the anode layer 8 can be effectively prevented.
  • the erosion of the organic light-emitting layer 4 by water oxygen greatly extends the life of the top-emitting micro-resonant inverted OLED device provided by the embodiments of the present invention.
  • oxidizing a part of the aluminum layer 6 to form the passivation layer 7 when the anode layer 8 is formed it is possible to reduce the hole injection barrier and lower the opening voltage of the OLED device.
  • the OLED device provided by the embodiments of the present invention is also easy to integrate with the existing mature sputtering ITO process.
  • a method of preparing an organic electroluminescent device comprising at least the following steps.
  • step 1 a cathode layer 2 is formed on the substrate 1.
  • the substrate 1 is a glass substrate.
  • the cathode layer 2 is formed using a film formation process such as sputtering or evaporation.
  • the cathode layer 2 is made of a low work function lithium aluminum alloy having a thickness of 200 to 300 nm.
  • step 2 an organic light-emitting layer 4 is formed on the cathode layer 2.
  • the electron injecting and transporting layer 3 is formed on the cathode layer 2 before the step of forming the organic light-emitting layer 4.
  • the electron injection and transport layer 3 has both electricity The role of subinjection and transmission.
  • the electron injection and transport layer 3 may further include an electron injection sublayer and an electron transport sublayer.
  • the hole transport and injection layer 5 is formed on the organic light-emitting layer 4 before the step of forming the metal layer 6.
  • the hole transport and injection layer 5 functions as both hole injection and transport.
  • the hole transport and injection layer 5 may further include a hole injection sublayer and a hole transport sublayer.
  • the electron injecting and transporting layer 3 and the organic light-emitting layer 4 are made of a material having a low work function, and, in order to facilitate hole injection, the hole injecting and transporting layer 5 is composed of a high work function. Made of materials.
  • the electron injecting and transporting layer 3 and the organic light-emitting layer 4 are formed using a film forming process such as vapor deposition or wet deposition.
  • step 3 a metal layer 6 is formed on the organic light-emitting layer 4 (or the hole transporting and injecting layer 5).
  • the metal layer 6 is made of aluminum, such that the passivation layer 7 is correspondingly an Al 2 O 3 passivation layer. Moreover, the metal layer 6 is an optical semi-transmissive layer and together with the cathode layer 2 constitutes a micro-resonant cavity.
  • the metal layer is formed by evaporation and has a thickness of 10 to 15 nm. In this way, a thin aluminum layer having a specific thickness can be obtained.
  • step 4 an anode layer 8 is formed on the metal layer 6.
  • a part of the metal layer 6 is oxidized while forming the anode layer 8 to obtain a passivation layer 7, by forming Al 2 O 3 blunt at the hole transport and injection layer 5 and the anode layer 8.
  • the layer 7 can achieve the effect of lowering the implantation barrier and protecting the organic layer.
  • the damage of the organic light-emitting layer 4 when the anode layer 8 is formed can be reduced, and at the same time, the anode layer 8 can effectively prevent water and oxygen.
  • the erosion of the organic light-emitting layer 4 greatly extends the life of the top-emitting inverted OLED device provided by the embodiments of the present invention.
  • oxidizing a part of the aluminum layer 6 to form the passivation layer 7 when the anode layer 8 is formed it is possible to reduce the hole injection barrier and lower the opening voltage of the OLED device.
  • OLED devices in accordance with embodiments of the present invention are also readily integrated with existing mature sputtering ITO processes.
  • the present invention provides a display comprising the inverted organic electroluminescent device as described above.

Abstract

一种有机电致发光器件及其制备方法和采用该有机电致发光器件的显示器，该有机电致发光器件从下至上依次包括：基板（1），阴极层（2），有机发光层（4），金属层（6）和阳极层（8），其中，该金属层（6）形成在有机发光层（4）与阳极层（8）之间。该器件结合微共振腔和倒置式器件的结构设计，从而有效地延长了OLED器件寿命、降低OLED器件的开启电压、并且提高色纯度及亮度。

Description

有机电致发光器件及其制备方法和具有该器件的显示器 技术领域
本发明涉及有机电致发光(OLED)技术领域，尤其是一种倒置式有机电致发光(OLED)器件及其制备方法和具有该器件的显示器。
背景技术
OLED器件为典型的三明治结构。由于有机层的材料对水氧敏感，因此OLED器件接触水氧后寿命急剧下降，如何延长OLED器件的寿命，是目前摆在各制造商面前的难题。
为了隔绝水氧，可以采用提高封装玻璃的密闭性的方法，比如将UV封胶密封基板玻璃与盖板玻璃改为以玻璃粉熔融密封，或是在盖板玻璃内刻槽放置干燥片等方式。但是这些方法中，有些需要使用昂贵的特种设备，如进行玻璃粉熔融的激光设备，工艺时间长；还有些需要对盖板玻璃进行二次加工，无法使用厚度较小的玻璃，无法达成平板显示中轻薄的需求。
发明内容
本发明旨在克服或者减轻上述现有使技术中存在的至少一个或多个技术问题。
本发明的至少一个目的在于提供一种有机电致发光器件(OLED)器件。
本发明的另一个目的在于提供一种OLED器件的制备方法。
本发明的又一个目的在于提供一种具有前述OLED器件的显示器。
根据本发明的一个方面，提出一种有机电致发光(OLED)器件，该有机电致发光器件从下至上依次可以包括：基板，阴极层，有机发光层，金属层和阳极层，其中：
金属层形成在有机发光层与阳极层之间。
具体地，在金属层与阳极层之间还包括钝化层，钝化层为在形成阳极层时氧化一部分金属层得到。
根据本发明的实施例，金属层为铝层，而钝化层为Al2O3钝化层。
根据本发明的实施例，金属层的厚度可以为10～15nm。根据本发明的实施例，金属层为光学半透层并且与阴极层共同构成微共振腔。
根据本发明的实施例，该有机电致发光器件还包括电子注入及传输层，该电子注入及传输层布置在阴极层和有机发光层之间。在一些实施例中，电子注入及传输层兼具电子注入和传输的作用。而在另一些实施例中，电子注入及传输层可以进一步包括电子注入子层和电子传输子层。
根据本发明的实施例，该有机电致发光器件还包括空穴传输及注入层，该空穴传输及注入层布置在有机发光层和金属层之间。在一些实施例中，空穴传输及注入层兼具空穴注入和传输的作用。而在另一些实施例中，空穴传输及注入层可以进一步包括空穴注入子层和空穴传输子层。
根据本发明的实施例，电子注入及传输层和有机发光层由具有低功函数的材料制成，而空穴传输及注入层由具有高功函数的材料制成。
根据本发明的实施例，阴极层可以由锂铝合金制成，厚度为200～300nm。
根据本发明的实施例，阳极层可以由氧化铟锡制成。
根据本发明的实施例，所述有机电致发光器件为顶发光器件。
根据本发明的另一方面，提出一种有机电致发光器件的制备方法，该制备方法至少包括以下步骤：
步骤1，在基板上形成阴极层；
步骤2，在阴极层上形成有机发光层；
步骤3，在有机发光层上形成金属层；以及
步骤4，在金属层上形成阳极层。
具体地，在上述形成阳极层的步骤4中，在形成阳极层的同时将部分金属层氧化以得到钝化层。
根据本发明的实施例，金属层为铝层，而钝化层为Al2O3钝化层。
根据本发明的实施例，金属层的厚度可以为10～15nm。根据本发明的实施例，金属层为光学半透层并且与阴极层共同构成微共振腔。
根据本发明的实施例，在形成有机发光层的步骤之前在阴极层上形成电子注入及传输层。在一些实施例中，空穴传输及注入层兼具空穴注入和传输的作用。而在另一些实施例中，空穴传输及注入层可以进一步包括空 穴注入子层和空穴传输子层。
根据本发明的实施例，在形成金属层的步骤之前在有机发光层上形成空穴传输及注入层。在一些实施例中，空穴传输及注入层兼具空穴注入和传输的作用。而在另一些实施例中，空穴传输及注入层可以进一步包括空穴注入子层和空穴传输子层。
根据本发明的实施例，阴极层可以由锂铝合金制成，厚度为200～300nm。
根据本发明的实施例，阳极层可以由氧化铟锡制成。
根据本发明的实施例，所述有机电致发光器件为顶发光器件。
根据本发明的又一方面，提出一种显示器，该显示器包括如前所述的有机电致发光器件。
根据本发明的实施例的有机电致发光器件，至少取得了如下技术效果：
由于金属层的存在，能够降低阳极层形成时对有机发光层的伤害，同时，阳极层又能够有效地防止水氧对有机发光层的侵蚀，从而极大地延长了根据本发明的实施例的OLED器件的寿命。
本发明能够实现的其它发明目的以及可以取得的其它技术效果将在下述的具体实施方式中结合对具体实施例的描述和附图的示意进行阐述。
附图说明
图1是根据本发明一实施例的OLED器件的结构示意图；和
图2是根据本发明一实施例的OLED器件的制备方法的流程图。
具体实施方式
下面详细描述本发明的具体实施例，所述具体实施例的示例在附图中示出，其中自始至终相同的标号表示相同或相似的元件。下面参考附图描述的具体实施例是示例性的，旨在解释本发明，而不能解释为对本发明的一种限制。
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明进一步详细说明。附图中，1为基板，2为 阴极层，3为电子注入及传输层，4为有机发光层，5为空穴传输及注入层，6为金属层，7为钝化层，8为阳极层。
根据本发明的发明构思，提供一种整合微共振腔作用和倒置式结构的有机电致发光(OLED)器件及其制备方法。
图1是根据本发明一实施例的OLED器件的结构示意图。如图1所示，OLED器件从下至上包括基板1，阴极层2，电子注入及传输层3，有机发光层4，空穴传输及注入层5，铝层6，钝化层7和阳极层8。其中，金属层6形成在空穴传输及注入层5与阳极层8之间。由于金属层6的存在，能够降低阳极层8形成时对有机发光层4的伤害，同时，阳极层8又能够有效地防止水氧对有机发光层4的侵蚀，从而极大地延长了根据本发明的实施例的OLED器件的寿命。
在一个实施例中，金属层6为光学半透层并且与阴极层2共同构成微共振腔。其中，通过降低金属层6的厚度来确保其光学半透射性能，例如，金属层6的厚度可以在10～15nm之间。由于在倒置的结构下结合了微共振腔设计，因而提升了出射光的强度和色纯度。
在一个实施例中，钝化层7为在形成阳极层8时氧化一部分金属层6得到的。根据本发明的实施例，金属层6为铝层，这样，钝化层7则相应地为Al2O3钝化层。而且，通过在空穴传输及注入层5与阳极层8之形成Al2O3钝化层7，可以达到降低注入势垒并且降低OLED器件开启电压，从而起到降低功耗及保护有机层的作用。
在本发明的一个实施例中，铝层采用蒸镀的方式形成，并且可以具有10～15nm的厚度。这样，可以取得具有特定厚度的薄铝层，从而来确保其光学半透射性能，另外由于厚度较薄，也不会不影响空穴的传输。
在本发明的一个实施例中，使用溅射或蒸镀等成膜工艺形成阴极层2和阳极层8。本发明一个实施例中采用顶发光，其中，阴极层2可以由低功函数的锂铝合金制成，其厚度可以为200～300nm；而阳极层8可以由氧化铟锡ITO制成。
根据本发明的实施例，可以使用蒸镀或湿法等成膜工艺形成电子注入及传输层3、有机发光层4和空穴传输及注入层5。此外，这里的电子注入及传输层3可以是一层兼具电子注入及传输作用的电子注入及传输层， 也可以进一步包括电子注入子层及电子传输子层；同样地，这里的空穴传输及注入层5可以是一层兼具空穴注入及传输作用的空穴注入及传输层，也可以进一步包括空穴注入子层及空穴传输子层。因此，根据本发明的实施例的OLED器件，还易于与现有成熟的溅射ITO工艺相整合。
根据本发明的实施例，电子注入及传输层3和有机发光层4可由具有低功函数的材料制成。并且，为了有利于空穴注入，空穴注入及传送层5可以由具有高功函数的材料制成。此外，在本实施例中，基板1为玻璃基板。
此外，根据本发明的实施例的倒置式OLED器件可以是顶发光倒置式OLED器件；然而，在需要的情况下，可以在阳极层之上在增加一层反射层，从而实现底发光OLED器件的设计。
根据本发明的实施例，基于上述倒置式OLED器件的结构，首先，由于金属层6的存在，能够降低阳极层8形成时对有机发光层4的伤害，同时，阳极层8又能够有效地防止水氧对有机发光层4的侵蚀，从而极大地延长了本发明的实施例提供的顶发光微共振腔倒置OLED器件的寿命。其次，通过在形成阳极层8时氧化一部分铝层6得到的钝化层7，可以起到降低空穴注入势垒、并且降低OLED器件开启电压的作用。再者，由于在倒置的结构下结合了微共振腔设计，因而提升了出射光的强度和色纯度。最后，本发明的实施例提供的OLED器件，还易于与现有成熟的溅射ITO工艺相整合。
根据本发明的另一方面，还提出一种有机电致发光器件的制备方法，该制备方法至少包括以下步骤。
步骤1，在基板1上形成阴极层2。
根据本发明的实施例，该基板1为玻璃基板。
在本发明一实施例中，使用溅射或蒸镀等成膜工艺形成阴极层2。
在本发明一实施例中，阴极层2由低功函数的锂铝合金制成，其厚度为200～300nm。
步骤2，在阴极层2上形成有机发光层4。
根据本发明的实施例，在形成有机发光层4的步骤之前在阴极层2上形成电子注入及传输层3。在一些实施例中，电子注入及传输层3兼具电 子注入和传输的作用。而在另一些实施例中，电子注入及传输层3可以进一步包括电子注入子层和电子传输子层。
根据本发明的实施例，在形成金属层6的步骤之前在有机发光层4上形成空穴传输及注入层5。在一些实施例中，空穴传输及注入层5兼具空穴注入和传输的作用。而在另一些实施例中，空穴传输及注入层5可以进一步包括空穴注入子层和空穴传输子层。
根据本发明的实施例，电子注入及传输层3和有机发光层4由具有低功函数的材料制成，并且，为了有利于空穴注入，空穴注入及传送层5由具有高功函数的材料制成。
在本发明一实施例中，使用蒸镀或湿法等成膜工艺形成电子注入及传输层3和有机发光层4。
步骤3，在有机发光层4(或空穴传输及注入层5)上形成金属层6。
这样，由于金属层的存在，不仅能够产生微腔效应，而且可以降低阳极层8形成时(如溅射)对有机发光层4及空穴传输及注入层5的伤害。
根据本发明的实施例，所述金属层6由铝制成，这样，钝化层7则相应地为Al2O3钝化层。而且，金属层6为光学半透层并且与阴极层2共同构成微共振腔。
在本发明一实施例中，所述金属层以蒸镀方式形成，厚度为10～15nm。这样，可以取得具有特定厚度的薄铝层。
步骤4，在金属层6上形成阳极层8。
在形成阳极层8的步骤4中，在形成阳极层8的同时将部分金属层6氧化以得到钝化层7，通过在空穴传输及注入层5与阳极层8之形成Al2O3钝化层7，可以达到降低注入势垒及保护有机层的作用。
根据本发明，基于上述倒置式OLED器件的制备方法，首先，由于金属层6的存在，能够降低阳极层8形成时对有机发光层4的伤害，同时，阳极层8又能够有效地防止水氧对有机发光层4的侵蚀，从而极大地延长了本发明的实施例提供的顶发光倒置式OLED器件的寿命。其次，通过在形成阳极层8时氧化一部分铝层6得到的钝化层7，可以起到降低空穴注入势垒、并且降低OLED器件开启电压的作用。再者，由于在倒置式结构的基础上结合了微共振腔设计，因而提升了出射光的强度和色纯度。最后， 根据本发明的实施例的OLED器件，还易于与现有成熟的溅射ITO工艺相整合。
此外，本发明还提供了一种显示器，该显示器包括如前所述的倒置式有机电致发光器件。
上述本发明的具体实施例仅例示性的说明了本发明的原理及其功效，而非用于限制本发明，熟知本领域的技术人员应明白，在不偏离本发明的精神和范围的情况下，对本发明所作的任何改变和改进都在本发明的范围内。本发明的权利保护范围，应如本申请的申请专利范围所界定的为准。

Claims (19)

  1. 一种有机电致发光器件，所述有机电致发光器件从下至上依次包括：基板(1)，阴极层(2)，有机发光层(4)和阳极层(8)，其中：
    所述有机电致发光器件还包括金属层(6)，所述金属层(6)形成在所述有机发光层(4)与所述阳极层(8)之间。
  2. 根据权利要求1所述的有机电致发光器件，其中，在所述金属层(6)与阳极层(8)之间还包括钝化层(7)，所述钝化层(7)为在形成阳极层(8)时氧化一部分所述金属层(6)得到。
  3. 根据权利要求2所述的有机电致发光器件，其中，所述金属层(6)为铝层，所述钝化层(7)为Al2O3钝化层。
  4. 根据权利要求1至3中任一所述的有机电致发光器件，其中，所述金属层的厚度为10～15nm；所述金属层(6)为光学半透层并且与阴极层(2)共同构成微共振腔。
  5. 根据权利要求1至3中任一所述的有机电致发光器件，其中，所述阴极层(2)由锂铝合金制成，厚度为200～300nm。
  6. 根据权利要求1至3中任一所述的有机电致发光器件，其中，所述有机电致发光器件为顶发光器件。
  7. 根据权利要求1至3中任一所述的有机电致发光器件，还包括电子注入及传输层(3)，所述电子注入及传输层(3)布置在所述阴极层(2)和所述有机发光层(4)之间。
  8. 根据权利要求1至3中任一所述的有机电致发光器件，还包括空穴传输及注入层(5)，所述空穴传输及注入层(5)布置在所述有机发光层(4)和所述金属层(6)之间。
  9. 根据权利要求1至3中任一所述的有机电致发光器件，其中，所述阳极层(8)由氧化铟锡制成。
  10. 一种有机电致发光器件的制备方法，所述制备方法包括以下步骤：
    步骤1，在基板(1)上形成阴极层(2)；
    步骤2，在阴极层(2)上形成有机发光层(4)；
    步骤3，在所述有机发光层(4)上形成金属层(6)；以及
    步骤4，在金属层(6)上形成阳极层(8)。
  11. 根据权利要求10所述的制备方法，其中，在所述形成阳极层(8)的步骤4中，在形成阳极层(8)的同时将部分金属层(6)氧化以得到钝化层(7)。
  12. 根据权利要求11所述的制备方法，其中，所述金属层(6)为铝层，而所述钝化层(7)为Al2O3钝化层。
  13. 根据权利要求10至12中任一所述的制备方法，其中，所述金属层的厚度为10～15nm；以及，所述金属层(6)为光学半透层并且与阴极层(2)共同构成微共振腔。
  14. 根据权利要求10至12中任一所述的制备方法，其中，所述阴极层(2)由锂铝合金制成，厚度为200～300nm。
  15. 根据权利要求10至12中任一所述的制备方法，其中，所述有机电致发光器件为顶发光器件。
  16. 根据权利要求10至12中任一所述的制备方法，其中，在形成有机发光层(4)的步骤之前在阴极层(2)上形成电子注入及传输层(3)；其中，所述电子注入及传输层(3)和所述有机发光层(4)由具有低功函数的材料制成。
  17. 根据权利要求10至12中任一所述的制备方法，其中，在形成金属层(6)的步骤之前在有机发光层(4)上形成空穴传输及注入层(5)；其中，所述空穴传输及注入层(5)由具有高功函数的材料制成。
  18. 根据权利要求10至12中任一所述的制备方法，其中，所述阳极层(8)由氧化铟锡制成。
  19. 一种显示器，包括如权利要求1至9中任一所述的有机电致发光器件。
PCT/CN2015/071811 2014-09-30 2015-01-29 有机电致发光器件及其制备方法和具有该器件的显示器 WO2016050023A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/777,799 US20160293887A1 (en) 2014-09-30 2015-01-29 Organic light-emitting device and method of manufacturing the same, and display having the device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410522062.9A CN104253242B (zh) 2014-09-30 2014-09-30 有机电致发光器件及其制备方法和具有该器件的显示器
CN201410522062.9 2014-09-30

Publications (1)

Publication Number Publication Date
WO2016050023A1 true WO2016050023A1 (zh) 2016-04-07

Family

ID=52187949

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/071811 WO2016050023A1 (zh) 2014-09-30 2015-01-29 有机电致发光器件及其制备方法和具有该器件的显示器

Country Status (3)

Country Link
US (1) US20160293887A1 (zh)
CN (1) CN104253242B (zh)
WO (1) WO2016050023A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253242B (zh) * 2014-09-30 2017-01-25 合肥鑫晟光电科技有限公司 有机电致发光器件及其制备方法和具有该器件的显示器
CN106784389A (zh) * 2017-02-17 2017-05-31 京东方科技集团股份有限公司 一种复合透明电极、有机发光二极管及其制备方法
CN106981574B (zh) * 2017-04-18 2019-07-05 浙江蓝绿新材料科技有限公司 一种长寿命钙钛矿光伏电池及其制备方法
CN107331787B (zh) * 2017-06-26 2019-06-21 京东方科技集团股份有限公司 封装盖板、有机发光显示器及其制备方法
CN107170905B (zh) * 2017-07-05 2019-03-26 固安翌光科技有限公司 一种高可靠无源有机电致发光器件及其制备方法
CN107134539B (zh) * 2017-07-05 2019-07-05 固安翌光科技有限公司 一种用于照明屏体的高可靠oled器件及其制备方法
CN109962133B (zh) * 2017-12-26 2020-11-17 Tcl科技集团股份有限公司 一种qled器件及其制备方法
CN109148694A (zh) * 2018-08-27 2019-01-04 领旺（上海）光伏科技有限公司 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法
CN111682051A (zh) * 2020-06-23 2020-09-18 昆明京东方显示技术有限公司 硅基有机电致发光显示基板及其制作方法、显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06290873A (ja) * 1993-04-02 1994-10-18 Fuji Electric Co Ltd 有機薄膜発光素子
WO2001015244A1 (en) * 1999-08-20 2001-03-01 Emagin Corporation Organic light emitting diode device with high work function metal-oxide anode layer and method of fabrication of same
US20050007016A1 (en) * 2003-07-10 2005-01-13 Toshitaka Mori Organic electroluminescent element
CN1922928A (zh) * 2004-03-05 2007-02-28 出光兴产株式会社 有机电致发光元件以及有机el显示装置
CN104253242A (zh) * 2014-09-30 2014-12-31 合肥鑫晟光电科技有限公司 有机电致发光器件及其制备方法和具有该器件的显示器
CN204271141U (zh) * 2014-09-30 2015-04-15 合肥鑫晟光电科技有限公司 有机电致发光器件和具有该器件的显示器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366017B1 (en) * 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
JP2005044778A (ja) * 2003-07-19 2005-02-17 Samsung Sdi Co Ltd 電界発光素子
KR20100071539A (ko) * 2008-12-19 2010-06-29 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06290873A (ja) * 1993-04-02 1994-10-18 Fuji Electric Co Ltd 有機薄膜発光素子
WO2001015244A1 (en) * 1999-08-20 2001-03-01 Emagin Corporation Organic light emitting diode device with high work function metal-oxide anode layer and method of fabrication of same
US20050007016A1 (en) * 2003-07-10 2005-01-13 Toshitaka Mori Organic electroluminescent element
CN1922928A (zh) * 2004-03-05 2007-02-28 出光兴产株式会社 有机电致发光元件以及有机el显示装置
CN104253242A (zh) * 2014-09-30 2014-12-31 合肥鑫晟光电科技有限公司 有机电致发光器件及其制备方法和具有该器件的显示器
CN204271141U (zh) * 2014-09-30 2015-04-15 合肥鑫晟光电科技有限公司 有机电致发光器件和具有该器件的显示器

Also Published As

Publication number Publication date
CN104253242B (zh) 2017-01-25
US20160293887A1 (en) 2016-10-06
CN104253242A (zh) 2014-12-31

Similar Documents

Publication Publication Date Title
WO2016050023A1 (zh) 有机电致发光器件及其制备方法和具有该器件的显示器
US9728749B2 (en) OLED array substrate, manufacturing method thereof, display panel and display device
KR101727668B1 (ko) 유기 발광 표시 장치
KR101148886B1 (ko) 유기전계발광소자 및 그 제조방법
WO2017161615A1 (zh) 量子点发光器件及其制备方法及液晶显示装置
JP4808772B2 (ja) 電子発光装置
US9780333B1 (en) Organic light-emitting diode element and display device
CN108682753B (zh) Oled显示面板及其制作方法
US20170133622A1 (en) Electroluminescent device and manufacturing method thereof, display substrate and display device
US9214645B1 (en) Inverted top emitting device and method for producing same
US20190386241A1 (en) Organic light-emitting diode display and method for fabricating the same
WO2016058531A1 (zh) 有机发光二极管及其制备方法、显示基板、显示装置
WO2017128635A1 (zh) 一种量子点电致发光器件及显示装置
WO2016155147A1 (zh) 蓝光有机电致发光器件及制备方法、显示面板和显示装置
JP2016004775A (ja) 有機発光ダイオード表示パネル
TWI469409B (zh) 有機電致發光元件
WO2016188095A1 (zh) 有机发光显示器件及其制作方法和显示装置
KR102094141B1 (ko) 유기전계발광표시장치 및 그 제조방법
WO2018033040A1 (zh) 顶发射型有机电致发光器件及其制备方法、显示装置
KR101470293B1 (ko) 유기발광소자용 광추출 기판 제조방법
JP2011113758A (ja) 有機ｅｌ素子及びその製造方法
WO2020258403A1 (zh) 有机电致发光器件及有机电致发光装置
KR100786231B1 (ko) 유기발광소자의 금속전극 형성방법
KR102045374B1 (ko) 상부 발광형 유기 발광 소자 및 그의 제조방법
TWI503968B (zh) 反射式有機發光二極體顯示裝置及其驅動方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14777799

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15846876

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 30/08/2017)

122 Ep: pct application non-entry in european phase

Ref document number: 15846876

Country of ref document: EP

Kind code of ref document: A1