WO2017128635A1 - 一种量子点电致发光器件及显示装置 - Google Patents

一种量子点电致发光器件及显示装置 Download PDF

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WO2017128635A1
WO2017128635A1 PCT/CN2016/089860 CN2016089860W WO2017128635A1 WO 2017128635 A1 WO2017128635 A1 WO 2017128635A1 CN 2016089860 W CN2016089860 W CN 2016089860W WO 2017128635 A1 WO2017128635 A1 WO 2017128635A1
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quantum dot
layer
energy level
electroluminescent device
highest occupied
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French (fr)
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郝学光
程鸿飞
乔勇
吴新银
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京东方科技集团股份有限公司
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Priority to US15/535,880 priority Critical patent/US10236462B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Definitions

  • Embodiments of the present invention relate to a quantum dot electroluminescent device and a display device.
  • a general organic light-emitting device includes a hole transport layer and a light-emitting layer; the highest-occurring orbital (HOMO) level of the hole transport layer material is 5.0 ev. ⁇ 5.3ev, the HOMO level of the luminescent layer material is 5.0 ev to 5.5 ev; the difference between the highest occupied orbital level of the hole transport layer material and the highest occupied orbital level of the luminescent layer material is beneficial to improve The hole transporting ability further increases the luminous efficiency of the organic electroluminescent device.
  • the highest-occurring orbital (HOMO) level of the hole transport layer material is 5.0 ev. ⁇ 5.3ev
  • the HOMO level of the luminescent layer material is 5.0 ev to 5.5 ev
  • the difference between the highest occupied orbital level of the hole transport layer material and the highest occupied orbital level of the luminescent layer material is beneficial to improve
  • the hole transporting ability further increases the luminous efficiency of the organic electroluminescent
  • Embodiments of the present invention provide a quantum dot electroluminescent device including a first electrode, an electron transport layer, a quantum dot light emitting layer, a hole transport layer, and a second electrode; the quantum dot light emitting layer is located at the electron transport layer And the hole transport layer; the quantum dot light-emitting layer comprises a substrate layer and a quantum dot luminescent material dispersed in the substrate layer, wherein a highest occupied orbital energy level of the substrate layer is located The highest occupied orbital energy level of the hole transport layer and the highest occupied orbital energy level of the quantum dot luminescent material.
  • the substrate layer has a highest occupied orbital energy level of 5.4 ev - 6.8 ev. Or for example, the substrate layer has a highest occupied orbital energy level of 5.8 ev - 6.2 ev.
  • the substrate layer is a coating or dispersing agent for the quantum dot luminescent material.
  • the substrate layer is an organic material, an inorganic material or a composite of an organic material and an inorganic material.
  • the substrate layer is formed of a base material and an energy level transition material doped in the base material, or the substrate layer is prepared from an energy level transition material.
  • a substrate layer; the highest occupied orbital energy level of the energy level transition material is located at the highest of the hole transport layer The high occupied orbital energy level and the highest occupied orbital energy level of the quantum dot luminescent material.
  • the energy level transition material includes at least one of the following three types of organic materials: a phosphate-based organic compound; a mercapto-based organic compound; and a carboxylic acid-based organic compound.
  • the energy level transition material comprises at least two materials of a phosphate organic compound, a sulfhydryl organic compound, and a carboxylic acid organic compound
  • the energy The grade transition material is a material formed by polymerization of the at least two types of materials.
  • the quantum dot light-emitting layer has a thickness of 10 nm to 450 nm. Or for example, the quantum dot light-emitting layer has a thickness of 55 nm to 400 nm.
  • the quantum dot luminescent material comprises at least one of a red quantum dot material, a green quantum dot material, and a blue quantum dot material.
  • light generated by the quantum dot light-emitting layer is emitted from a side where the first electrode is located, and a side of the first electrode facing away from the quantum dot light-emitting layer is disposed.
  • Embodiments of the present invention also provide a display device comprising the quantum dot electroluminescent device as described above.
  • FIG. 1 is a schematic structural diagram of a quantum dot electroluminescent device according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing the working principle of the portion A in Figure 1;
  • FIG. 3 is a schematic view showing the operation principle of the quantum dot electroluminescent device of FIG. 1;
  • FIG. 4 is a flow chart of hole transport of a quantum dot electroluminescent device according to an embodiment of the invention.
  • the highest occupied orbital energy level of the quantum dot luminescent material is 6.8 ev, and the hole transport layer material has a lower The highest occupied orbital energy level, therefore, the large frequency band shift between the hole transport layer material and the quantum dot luminescent material reduces the injection efficiency of holes from the hole transport layer vector sub-dot light-emitting layer, resulting in hole migration difficulties. Thereby reducing the luminous efficiency of the quantum dot electroluminescent device.
  • Embodiments of the present invention provide a quantum dot electroluminescent device and a display device, the display device including a quantum dot electroluminescent device.
  • the quantum dot electroluminescent device can improve the injection efficiency of holes from the hole-transport layer vector sub-dot light-emitting layer, facilitate hole migration, and further improve luminous efficiency.
  • a quantum dot electroluminescent device includes a first electrode 1 , an electron transport layer 2 , a quantum dot light emitting layer 3 , a hole transport layer 4 , and a second electrode 5 ;
  • the dot light-emitting layer 3 is located between the electron transport layer 2 and the hole transport layer 4;
  • the quantum dot light-emitting layer 3 includes a base material layer 31 and a quantum dot light-emitting material 32 dispersed in the base material layer 31, and the highest of the base material layer 31
  • the occupied orbital level is between the highest occupied orbital level of the hole transport layer 4 and the highest occupied orbital level of the quantum dot luminescent material 32.
  • the quantum dot luminescent material 32 of the above quantum dot electroluminescent device has a light-emitting principle: holes h of one of the first electrode 1 and the second electrode 5 are injected into the hole transport layer.
  • the highest occupied orbital level of 4 the electron e is injected into the lowest occupied orbital level of the electron transport layer 2; the electron e and the hole h simultaneously migrate the vector sub-dot light-emitting layer 3, due to the highest occupied by the hole transport layer 4
  • the orbital level is similar to the highest occupied orbital level of the substrate layer 31 of the quantum dot light-emitting layer 3, so that the hole h preferentially occupies the highest occupied orbital level of the substrate layer 31; the hole h is further composed of the substrate layer 31.
  • the highest occupied orbital level is injected into the quantum dot luminescent material 32; the hole h and the electron e are combined to form an exciton in the quantum dot luminescent material 32, and the hole h increases in energy hv while obtaining the electron e, and transitions from the ground state To the excited state; the excitons continuously undergo free diffusion motion in the quantum dot luminescent material 32, and are inactivated by radiation or no radiation; when the excitons return to the ground state from the excited state in a radiation transition manner, electricity can be observed. Luminescence phenomenon.
  • the substrate layer 31 is located between the hole transport layer 4 and the quantum dot luminescent material 32, and the highest occupied orbital level of the substrate layer 31 is located at the highest level of the hole transport layer 4.
  • the occupied orbital level and the highest occupied orbital level of the quantum dot luminescent material 32 are between.
  • the base material layer 31 becomes The holes are transported from the hole transport layer 4 to the transition layer of the quantum dot luminescent material 32.
  • holes in the hole transport layer 4 can be easily injected into the quantum dot luminescent material 32 through the base material layer 31, which improves the injection efficiency of holes from the hole transport layer 4, the vector sub-dot light-emitting layer 3, and the holes. Migration is easier, which in turn increases the luminous efficiency of quantum dot electroluminescent devices.
  • the hole transport process includes the following steps:
  • step S11 the holes in the hole transport layer 4 are transferred to the base material layer 31 of the quantum dot light-emitting layer 3, wherein the highest occupied orbital energy level of the base material layer 31 is located at the highest occupied orbital energy of the hole transport layer 4. Between the highest occupied orbital level of the quantum dot luminescent material 32;
  • step S12 holes in the substrate layer 31 are transferred to the quantum dot luminescent material 32 in the quantum dot light-emitting layer 3.
  • the highest occupied orbital level of the substrate layer 31 is located at the highest occupied orbital level of the hole transport layer 4 and the highest occupied by the quantum dot luminescent material 32. Between the orbital levels, holes in the hole transport layer 4 can be relatively easily transferred into the substrate layer 31 of the quantum dot light-emitting layer 3. Similarly, holes in the substrate layer 31 can be easily transferred to the quantum dot luminescent material 32 in the quantum dot luminescent layer 3.
  • holes in the hole transport layer 4 can be easily injected into the quantum dot luminescent material 32 through the substrate layer 31, and the injection efficiency of holes injected from the hole transport layer 4 into the quantum dot light-emitting layer 3 is improved, and holes are formed.
  • the migration is easy, thereby improving the luminous efficiency of the quantum dot electroluminescent device.
  • the highest occupied orbital level of the substrate layer 31 may be, for example, 5.4 ev to 6.8 ev.
  • the highest occupied orbital energy level of the hole transport layer 4 is 5.0 to 5.3 ev, and the highest occupied orbital energy level of the quantum dot luminescent material 32 in the quantum dot light-emitting layer 3 is 6.8 ev, the hole transport layer 4 and the quantum dot luminescent material.
  • the energy level of 32 is quite different. Therefore, when the highest occupied orbital level of the substrate layer 31 is 5.4 ev to 6.8 ev, the highest occupied orbital level of the substrate layer 31 is located at the highest occupied orbital level and quantum dot of the hole transport layer 4.
  • the highest occupied position of the luminescent material 32 is between the orbital levels.
  • the base material layer 31 serves as a transition layer in which holes are transported from the hole transport layer 4 to the quantum dot luminescent material 32. So the hole can be more It is easily transported from the hole transport layer 4 into the quantum dot light-emitting layer 3, thereby further improving the hole transport efficiency and further improving the light-emitting efficiency of the quantum dot electroluminescent device.
  • the highest occupied orbital energy level of the base material layer 31 in the above-described quantum dot light-emitting layer 3 is 5.8 ev to 6.2 ev.
  • the base material layer 31 in the above-described quantum dot light-emitting layer 3 is a coating agent or a dispersant for the quantum dot light-emitting material 32.
  • the base material layer 31 in the above-described quantum dot light-emitting layer 3 is an organic material, an inorganic material, or a composite of an organic material and an inorganic material.
  • the above substrate layer 31 can be constructed in two ways:
  • the base material layer 31 in the quantum dot light-emitting layer 3 may be a base material layer 31 formed of a base material and an energy level transition material doped in the base material; the highest occupied orbital energy level of the energy level transition material Located between the highest occupied orbital level of the hole transport layer 4 and the highest occupied orbital level of the quantum dot luminescent material 32.
  • the substrate layer 31 in the quantum dot luminescent layer 3 may also be a substrate layer 31 prepared from an energy level transition material.
  • the highest occupied orbital level of the energy level transition material is at the highest level of the hole transport layer 4.
  • the highest occupied orbital level of the entire base material layer 31 can be between the highest occupied orbital level of the hole transport layer 4 and the highest of the quantum dot luminescent material 32.
  • the substrate layer 31 becomes a transition layer between the hole transport layer 4 and the quantum dot luminescent material 32, so that holes can be more easily removed from the hole transport layer 4 through the transition of the substrate layer 31.
  • the transfer into the quantum dot light-emitting layer 3 further improves the hole transport efficiency and the luminous efficiency of the quantum dot electroluminescent device.
  • the energy level transition material may include at least one of the following three types of organic materials:
  • the above energy level transition materials may include the following:
  • the first type the energy level transition material includes a phosphate organic compound
  • the second type: energy level transition material includes sulfhydryl-based organic compounds
  • the third type the energy level transition material includes a carboxylic acid organic compound
  • the fourth type: energy level transition materials include two types of organic materials: phosphate organic compounds and sulfhydryl organic compounds;
  • the fifth type the energy level transition material includes two kinds of organic materials: a phosphate organic compound and a carboxylic acid organic compound;
  • the energy level transition material comprises two kinds of organic materials: a carboxylic acid organic compound and a sulfhydryl organic compound;
  • the seventh type: energy level transition materials include organic compounds such as phosphate organic compounds, carboxylic acid organic compounds and sulfhydryl organic compounds.
  • the energy level transition material comprises at least two materials of a phosphate organic compound, a sulfhydryl organic compound, and a carboxylic acid organic compound
  • the energy level transition material is composed of at least two materials. The material formed by the polymerization.
  • the energy level transition material may be a material formed by polymerization of the above two or three types of organic materials.
  • the thickness of the quantum dot light-emitting layer 3 may be, for example, 10 to 450 nm. Alternatively, the thickness of the quantum dot light-emitting layer 3 may be, for example, 55 to 400 nm.
  • the quantum dot luminescent material 32 of the above quantum dot electroluminescent device comprises at least one of a red quantum dot material, a green quantum dot material, and a blue quantum dot material.
  • quantum dot electroluminescent device light generated by the quantum dot light-emitting layer 3 is emitted from the side where the first electrode 1 is located, and a side of the first electrode 1 facing away from the quantum dot light-emitting layer 3 is provided with a transparent protective layer; and/or The light generated by the quantum dot light-emitting layer 3 is emitted from the side where the second electrode 5 is located, and the transparent electrode layer 6 is provided on the side of the second electrode 5 facing away from the quantum dot light-emitting layer 3.
  • a side of the second electrode 5 facing away from the quantum dot emitting layer 3 is provided with a transparent protective layer 6 , through which the side of the quantum dot electroluminescent device that emits light can be protected. Further, the entire quantum dot electroluminescent device is protected; the transparent protective layer 6 may be a transparent substrate such as a transparent glass substrate, a transparent resin substrate or the like.

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Abstract

一种量子点电致发光器件及显示装置。该量子点电致发光器件包括第一电极(1)、电子传输层(2)、量子点发光层(3)、空穴传输层(4)和第二电极(5)；量子点发光层(3)位于电子传输层(2)和空穴传输层(4)之间；量子点发光层(3)包括基材层(31)和分散于基材层(31)内的量子点发光材料(32)，并且基材层(31)的最高已占轨道能级位于空穴传输层(4)的最高已占轨道能级和量子点发光材料(32)的最高已占轨道能级之间。

Description

一种量子点电致发光器件及显示装置 技术领域
本发明的实施例涉及一种量子点电致发光器件及显示装置。
背景技术
目前，一般的有机电致发光器件(Organic Light-Emitting Diode，OLED)包括空穴传输层和发光层；空穴传输层材料的最高已占轨道(Highest Occupied Molecular Orbital，HOMO)能级为5.0ev～5.3ev，发光层材料的HOMO能级为5.0ev～5.5ev；空穴传输层材料的最高已占轨道能级与发光层材料的最高已占轨道能级之间的微小差异，有利于提高空穴传输能力，进而提高有机电致发光器件的发光效率。
发明内容
本发明的实施例提供一种量子点电致发光器件，包括第一电极、电子传输层、量子点发光层、空穴传输层和第二电极；所述量子点发光层位于所述电子传输层和所述空穴传输层之间；所述量子点发光层包括基材层和分散于所述基材层内的量子点发光材料，所述基材层的最高已占轨道能级位于所述空穴传输层的最高已占轨道能级和所述量子点发光材料的最高已占轨道能级之间。
在本发明的一种实施方式中，例如，所述基材层的最高已占轨道能级为5.4ev-6.8ev。或者例如，所述基材层的最高已占轨道能级为5.8ev-6.2ev。
在本发明的一种实施方式中，例如，所述基材层为用于所述量子点发光材料的包覆剂或分散剂。
在本发明的一种实施方式中，例如，所述基材层为有机材料、无机材料或有机材料和无机材料的复合物。
在本发明的一种实施方式中，例如，所述基材层由基础材料和掺杂于所述基础材料内的能级过渡材料形成，或者所述基材层为由能级过渡材料制备的基材层；所述能级过渡材料的最高已占轨道能级位于所述空穴传输层的最 高已占轨道能级和所述量子点发光材料的最高已占轨道能级之间。
在本发明的一种实施方式中，例如，所述能级过渡材料包括下述三类有机材料中的至少一类：磷酸根类有机化合物；巯基类有机化合物；羧酸类有机化合物。
在本发明的一种实施方式中，例如，当所述能级过渡材料包括磷酸根类有机化合物、巯基类有机化合物以及羧酸类有机化合物三类材料中的至少两类材料时，所述能级过渡材料为由所述至少两类材料聚合形成的材料。
在本发明的一种实施方式中，例如，所述量子点发光层的厚度为10nm-450nm。或者例如，所述量子点发光层的厚度为55nm-400nm。
在本发明的一种实施方式中，例如，所述量子点发光材料包括红色量子点材料、绿色量子点材料和蓝色量子点材料中的至少一种。
在本发明的一种实施方式中，例如，所述量子点发光层产生的光线从所述第一电极所在一侧出射，且所述第一电极背离所述量子点发光层的一侧设有透明防护层；和/或，所述量子点发光层产生的光线从所述第二电极所在一侧出射，且所述第二电极背离所述量子点发光层的一侧设有透明防护层。
本发明的实施例还提供一种显示装置，包括如上所述的量子点电致发光器件。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明一实施例提供的量子点电致发光器件的结构示意图；
图2为图1中A部分的工作原理示意图；
图3为图1中的量子点电致发光器件的工作原理示意图；
图4为本发明一实施例提供的量子点电致发光器件的空穴传输流程图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然， 所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
在将有机电致发光器件中的空穴传输层材料应用于量子点电致发光器件时，由于量子点发光材料的最高已占轨道能级为6.8ev，而空穴传输层材料具有较低的最高已占轨道能级，因此，空穴传输层材料与量子点发光材料之间较大的频带偏移会降低空穴从空穴传输层向量子点发光层的注入效率，造成空穴迁移困难，进而降低量子点电致发光器件的发光效率。
本发明实施例提供了一种量子点电致发光器件及显示装置，该显示装置包括量子点电致发光器件。该量子点电致发光器件能够提高空穴从空穴传输层向量子点发光层的注入效率，使空穴迁移容易，进而提高发光效率。
如图1所示，本发明一种实施例提供的量子点电致发光器件，包括第一电极1、电子传输层2、量子点发光层3、空穴传输层4和第二电极5；量子点发光层3位于电子传输层2和空穴传输层4之间；量子点发光层3包括基材层31和分散于基材层31内的量子点发光材料32，并且基材层31的最高已占轨道能级位于空穴传输层4的最高已占轨道能级和量子点发光材料32的最高已占轨道能级之间。
如图2和图3所示，上述量子点电致发光器件的量子点发光材料32的发光原理为：第一电极1和第二电极5中的一个电极的空穴h注入到空穴传输层4的最高已占轨道能级，电子e注入到电子传输层2的最低已占轨道能级；电子e和空穴h同时向量子点发光层3迁移，由于空穴传输层4的最高已占轨道能级与量子点发光层3的基材层31的最高已占轨道能级相近，所以空穴h优先占据基材层31的最高已占轨道能级；空穴h再由基材层31的最高已占轨道能级注入到量子点发光材料32；空穴h与电子e在量子点发光材料32中复合形成激子，空穴h在得到电子e的同时能量hv增加，并从基态跃迁到激发态；激子在量子点发光材料32中不断地做自由扩散运动，并以辐射或无辐射的方式失活；当激子以辐射跃迁的方式从激发态回到基态就可以观察到电致发光现象。
上述量子点电致发光器件中，基材层31位于空穴传输层4和量子点发光材料32之间，并且基材层31的最高已占轨道能级位于空穴传输层4的最高 已占轨道能级和量子点发光材料32的最高已占轨道能级之间。在空穴从空穴传输层4注入到量子点发光层3的过程中，由于基材层31与空穴传输层4和量子点发光材料32的能级匹配度较好，基材层31成为空穴从空穴传输层4传输到量子点发光材料32的过渡层。因此，空穴传输层4中的空穴能够经过基材层31容易地注入到量子点发光材料32，提高了空穴从空穴传输层4向量子点发光层3的注入效率，使空穴迁移更加容易，进而提高了量子点电致发光器件发光效率。
例如，如图4所示，在上述量子点电致发光器件在正常工作过程中，空穴传输过程包括以下步骤：
步骤S11，空穴传输层4中的空穴传递至量子点发光层3的基材层31中，其中基材层31的最高已占轨道能级位于空穴传输层4的最高已占轨道能级和量子点发光材料32的最高已占轨道能级之间；
步骤S12，基材层31内的空穴传递至量子点发光层3内的量子点发光材料32中。
如图4所示，上述量子点电致发光器件中，由于基材层31的最高已占轨道能级位于空穴传输层4的最高已占轨道能级和量子点发光材料32的最高已占轨道能级之间，空穴传输层4中的空穴能够比较容易地传递至量子点发光层3的基材层31中。同理，基材层31内的空穴能够容易地传递至量子点发光层3内的量子点发光材料32中。所以，空穴传输层4中的空穴能够经过基材层31容易地注入到量子点发光材料32，提高了空穴从空穴传输层4注入量子点发光层3的注入效率，使空穴迁移容易，进而提高量子点电致发光器件发光效率。
上述量子点电致发光器件中，基材层31的最高已占轨道能级例如可以为5.4ev～6.8ev。
空穴传输层4的最高已占轨道能级为5.0～5.3ev，量子点发光层3中量子点发光材料32的最高已占轨道能级为6.8ev，空穴传输层4与量子点发光材料32的能级差距较大。因此，当基材层31的最高已占轨道能级为5.4ev～6.8ev时，基材层31的最高已占轨道能级恰好位于空穴传输层4的最高已占轨道能级和量子点发光材料32的最高已占轨道能级之间。这样，基材层31成为空穴从空穴传输层4传输到量子点发光材料32的过渡层。因此空穴能够更加容 易地从空穴传输层4传输到量子点发光层3中，进一步提高空穴迁移效率，进而提高量子点电致发光器件的发光效率。
例如，上述量子点发光层3中的基材层31的最高已占轨道能级为5.8ev～6.2ev。
在一种实施方式中，如图1所示，上述量子点发光层3中的基材层31为用于量子点发光材料32的包覆剂或分散剂。
例如，上述量子点发光层3中的基材层31为有机材料、无机材料或有机材料和无机材料的复合物。
例如，上述基材层31可以由两种方式构成：
方式一，上述量子点发光层3中的基材层31可以为由基础材料和掺杂于基础材料内的能级过渡材料形成的基材层31；能级过渡材料的最高已占轨道能级位于空穴传输层4的最高已占轨道能级和量子点发光材料32的最高已占轨道能级之间。
方式二，上述量子点发光层3中的基材层31还可以为由能级过渡材料制备的基材层31，能级过渡材料的最高已占轨道能级位于空穴传输层4的最高已占轨道能级和量子点发光材料32的最高已占轨道能级之间。
基材层31通过上述两种方式构成时，都能够使基材层31整体的最高已占轨道能级介于空穴传输层4的最高已占轨道能级和量子点发光材料32的最高已占轨道能级之间，使得基材层31成为空穴传输层4和量子点发光材料32之间的过渡层，从而空穴能够通过基材层31的过渡更加容易地从空穴传输层4传输到量子点发光层3中，进一步提高空穴迁移效率和量子点电致发光器件的发光效率。
在一种实施方式中，上述能级过渡材料可以包括下述三类有机材料中的至少一类：
磷酸根类有机化合物；
巯基类有机化合物；
羧酸类有机化合物。
例如，上述能级过渡材料可以包括以下几种：
第一种：能级过渡材料包括磷酸根类有机化合物；
第二种：能级过渡材料包括巯基类有机化合物；
第三种：能级过渡材料包括羧酸类有机化合物；
第四种：能级过渡材料包括磷酸根类有机化合物和巯基类有机化合物两类有机材料；
第五种：能级过渡材料包括磷酸根类有机化合物和羧酸类有机化合物两类有机材料；
第六种：能级过渡材料包括羧酸类有机化合物和巯基类有机化合物两类有机材料；
第七种：能级过渡材料包括磷酸根类有机化合物、羧酸类有机化合物和巯基类有机化合物三类有机材料。
在一种实施方式中，当能级过渡材料包括磷酸根类有机化合物、巯基类有机化合物以及羧酸类有机化合物三类材料中的至少两类材料时，能级过渡材料为由至少两类材料聚合形成的材料。
当能级过渡材料为上述第四种、第五种、第六种和第七种材料时，能级过渡材料可以为通过上述两类或三类有机材料聚合形成的材料。
上述量子点电致发光器件中，量子点发光层3的厚度例如可以为10～450nm。或者，量子点发光层3的厚度例如可以为55～400nm。
上述量子点电致发光器件的量子点发光材料32包括红色量子点材料、绿色量子点材料和蓝色量子点材料中的至少一种。
上述量子点电致发光器件中，量子点发光层3产生的光线从第一电极1所在一侧出射，且第一电极1背离量子点发光层3的一侧设有透明防护层；和/或，量子点发光层3产生的光线从第二电极5所在一侧出射，且第二电极5背离量子点发光层3的一侧设有透明防护层6。
如图1所示，第二电极5背离量子点发光层3的一侧设有透明防护层6，通过所述透明防护层6可以对量子点电致发光器件的出射光线的一侧进行保护，进而保护整个量子点电致发光器件；透明防护层6可为透明基板，如：透明玻璃基板、透明树脂基板等。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2016年1月27日递交的中国专利申请第201610055724.5号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一 部分。

Claims (13)

  1. 一种量子点电致发光器件，包括第一电极、电子传输层、量子点发光层、空穴传输层和第二电极；所述量子点发光层位于所述电子传输层和所述空穴传输层之间；
    所述量子点发光层包括基材层和分散于所述基材层内的量子点发光材料，所述基材层的最高已占轨道能级位于所述空穴传输层的最高已占轨道能级和所述量子点发光材料的最高已占轨道能级之间。
  2. 根据权利要求1所述的量子点电致发光器件，其中，所述基材层的最高已占轨道能级为5.4ev-6.8ev。
  3. 根据权利要求1所述的量子点电致发光器件，其中，所述基材层的最高已占轨道能级为5.8ev-6.2ev。
  4. 根据权利要求1所述的量子点电致发光器件，其中，所述基材层为用于所述量子点发光材料的包覆剂或分散剂。
  5. 根据权利要求1或4所述的量子点电致发光器件，其中，所述基材层为有机材料、无机材料或有机材料和无机材料的复合物。
  6. 根据权利要求5所述的量子点电致发光器件，其中，所述基材层由基础材料和掺杂于所述基础材料内的能级过渡材料形成，或者所述基材层为由能级过渡材料制备的基材层；所述能级过渡材料的最高已占轨道能级位于所述空穴传输层的最高已占轨道能级和所述量子点发光材料的最高已占轨道能级之间。
  7. 根据权利要求6所述的量子点电致发光器件，其中，所述能级过渡材料包括下述三类有机材料中的至少一类：磷酸根类有机化合物；巯基类有机化合物；羧酸类有机化合物。
  8. 根据权利要求7所述的量子点电致发光器件，其中，当所述能级过渡材料包括磷酸根类有机化合物、巯基类有机化合物以及羧酸类有机化合物三类材料中的至少两类材料时，所述能级过渡材料为由所述至少两类材料聚合形成的材料。
  9. 根据权利要求1-8任一项所述的量子点电致发光器件，其中，所述量子点发光层的厚度为10nm-450nm。
  10. 根据权利要求1-8任一项所述的量子点电致发光器件，其中，所述量子点发光层的厚度为55nm-400nm。
  11. 根据权利要求1-8任一项所述的量子点电致发光器件，其中，所述量子点发光材料包括红色量子点材料、绿色量子点材料和蓝色量子点材料中的至少一种。
  12. 根据权利要求1-8任一项所述的量子点电致发光器件，其中，
    所述量子点发光层产生的光线从所述第一电极所在一侧出射，且所述第一电极背离所述量子点发光层的一侧设有透明防护层；和/或，
    所述量子点发光层产生的光线从所述第二电极所在一侧出射，且所述第二电极背离所述量子点发光层的一侧设有透明防护层。
  13. 一种显示装置，包括如权利要求1-12中任一项所述的量子点电致发光器件。
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