WO2015139403A1 - 基于单排多层结构的电场式时栅直线位移传感器 - Google Patents

基于单排多层结构的电场式时栅直线位移传感器 Download PDF

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WO2015139403A1
WO2015139403A1 PCT/CN2014/083125 CN2014083125W WO2015139403A1 WO 2015139403 A1 WO2015139403 A1 WO 2015139403A1 CN 2014083125 W CN2014083125 W CN 2014083125W WO 2015139403 A1 WO2015139403 A1 WO 2015139403A1
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Prior art keywords
electrode
probe
fixed
electrodes
length
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PCT/CN2014/083125
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English (en)
French (fr)
Inventor
刘小康
彭东林
彭凯
郑方燕
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重庆理工大学
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Priority to JP2016533612A priority Critical patent/JP6086518B2/ja
Priority to DE112014006476.9T priority patent/DE112014006476B4/de
Publication of WO2015139403A1 publication Critical patent/WO2015139403A1/zh
Priority to US15/228,733 priority patent/US10495488B2/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
    • G01D5/241—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes
    • G01D5/2412—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes by varying overlap
    • G01D5/2415—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes by varying overlap adapted for encoders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness

Definitions

  • the invention belongs to a precision linear displacement measuring sensor.
  • the time-varying linear displacement sensor based on the alternating electric field adopts a differential capacitance structure, and two rows of standing waves are required to form two standing wave signals, and then the adding circuit synthesizes one traveling wave signal.
  • the two rows of electrode signals interfere with each other, resulting in an increase in measurement error, which hinders further improvement in accuracy. It is difficult to ensure the consistency of the two rows of electrodes in the manufacturing process. It is also difficult to ensure that the electric field coupling strengths of the two rows of electrodes are consistent in the installation, resulting in inconsistent amplitudes of the two standing wave signals, resulting in measurement errors, and the adaptability to the industrial site is degraded.
  • the object of the present invention is to solve the above-mentioned deficiencies of the prior art, and propose an electric field type time grid linear displacement sensor based on a single row and multi-layer structure, which adopts an electrode based on a single row of multi-layer structure to solve the signal between the two rows of electrodes.
  • Mutual interference problem avoiding the problem of inconsistency between the two rows of electrodes caused by processing and installation; directly acquiring the traveling wave signal by using the electric field coupling principle, without adding circuit; thus reducing the measurement error, reducing the requirement for installation accuracy, and simplifying the system structure.
  • An electric field type time grid linear displacement sensor based on a single row and multi-layer structure, comprising a probe base body and a fixed length base body.
  • the 4th + 4th electrode is connected into a group to form a D excitation phase; the probe base and the fixed base are arranged in parallel above and below, and the probe electrode of the probe base is directly opposite to the fixed length electrode of the fixed length, and a certain gap is left ⁇ Shape A coupling capacitor.
  • the base of the probe and the base of the fixed length move relatively; the relative coverage area of the four excitation phases of the probe electrode and A, B, C, D will be from small to small, from small to large, from small to small, from small to no-present period.
  • Sexual change the capacitance value also changes periodically; the four excitation phases A, B, C, and D of the fixed length are respectively connected to equal-amplitude sinusoidal excitation voltages Ua, Ub, Uc with phase difference of 90°.
  • Ud a traveling wave signal Uo is generated on the probe electrode, and the traveling wave signal is shaped by a phase-matching circuit with a phase-fixed same-frequency reference signal Ur, and the phase difference of the two signals is interpolated.
  • the number of high-frequency clock pulses is represented by a scale transformation to obtain a linear displacement value of the probe base relative to the fixed-length base.
  • the fixed length is sequentially coated with four dielectric films, and the first layer is a metal film, which is sprayed into four excitation signal leads, and the corresponding electrodes of the respective excitation phases of A, B, C and D are respectively connected into one group; It is an insulating film; the third layer is a metal film, which is sprayed into a row of fixed-length electrodes; the fourth layer is an insulating protective film.
  • the shape of the fixed-length electrode is rectangular and the same size, and a certain insulation pitch is maintained between adjacent electrodes.
  • the shape of the probe electrode is a double sinusoidal shape formed by two sinusoidal upper and lower symmetry, and adjacent probe electrodes are connected by rectangular leads.
  • the length of the probe electrode is slightly smaller than the length of the fixed electrode, and the width is a fixed electrode width and The sum of the insulation intervals, the distance between the two probe electrodes is 3 probe electrodes.
  • the shape of the probe electrode (1-1) is a region surrounded by a sinusoidal curve on the [ ⁇ , ⁇ ] interval and an X-axis, and a sinusoidal curve on the [ ⁇ , 2 ⁇ ] interval and the X-axis
  • the regions are formed in common, thereby obtaining a coupling capacitor whose sinusoidal variation is performed on the area, and further acquiring the displacement modulation signal.
  • the ⁇ excitation phase electrode and the probe electrode form a coupling capacitance d
  • the B excitation phase electrode and the probe electrode form a coupling capacitor C 2
  • the C excitation phase electrode and the probe electrode form a coupling capacitor C 3 , D excitation phase
  • the electrode and the probe electrode form a coupling capacitor C 4 ;
  • the coupling capacitors d, C 2 , C 3 , ⁇ are alternately operated, wherein when two capacitors are operated, the other two capacitance values are zero, and the output line on the probe electrode Wave signal Uo.
  • the traveling wave signal Uo and the same frequency reference signal Ur are formed into a square wave by the shaping circuit, and then the phase is compared.
  • the technical solution of the present invention is a new method for directly forming an electric traveling wave based on electric field coupling of a single row multi-layer structure, which combines the advantages of the existing various grid displacement sensors.
  • Figure 1 (a) is a schematic diagram of the electrode on the stator base and the probe base.
  • Figure 1 (b) is a plot of the position of the electrode on the stator base and the electrode on the probe base.
  • Figure 2 is a diagram showing the signal connection relationship of a fixed-length electrode.
  • Figure 3 is a schematic diagram of the coupling capacitance formed by the probe electrode and the fixed electrode.
  • FIG. 4 is a schematic diagram of a circuit model of the present invention.
  • the sensor of the present invention comprises a probe base 1 and a fixed length base 2 in two parts. Ceramic is used as the base material by spraying a layer of iron-nickel alloy as an electrode on the surface of the ceramic.
  • each electrode is 18mm*1.1mm, and the shape is a region surrounded by a sine curve and an x-axis on the [ ⁇ , ⁇ ] interval.
  • the sinusoidal curve in the [ ⁇ , 2 ⁇ ] section is formed together with the X-axis enclosing area, and a rectangular lead having a width of 1.8 mm connects the respective probe electrodes.
  • the dielectric substrate is sequentially coated with four dielectric films, the first layer is a metal film, the second layer is an insulating film, the third layer is a metal film, and the fourth layer is an insulating protective film; the first layer of metal film is 4
  • the flat strip conductor, that is, the excitation signal lead 2-2 respectively connects the corresponding electrodes of the respective excitation phases of A, B, C, and D into a group
  • the third metal film is a row of rectangular electrodes of the same size, that is, the fixed-length electrode 2-1, each electrode is 20mm*1mm, and the insulation spacing between adjacent electrodes is 0.1mm.
  • the probe base 1 and the fixed base 2 are arranged in parallel above and below, and the probe electrode 1-1 is opposite to the fixed electrode 2-1 with a gap of 0.5 mm.
  • a probe electrode substrate 1-1 and Length excitation electrodes forming the coupling capacitance C l Q probe electrode 1-1 and the electrode B are formed Length matrix phase excitation coupling capacitance C 2.
  • Probe electrode 1-1 and stator base C electrode body excitation phase coupling capacitor C 3.
  • the probe electrode 1-1 forms a coupling capacitance C 4 with the electrode of the D-excited phase of the stator base.
  • the relative coverage area of the d capacitor decreases from large to small, and the relative coverage area of the C 2 capacitor changes from small to large; after moving one electrode width, d capacitor
  • the relative coverage area of the capacitor becomes zero, the relative coverage area of the C 2 capacitor begins to decrease from large to small, and the relative coverage area of the C 3 capacitor changes from small to large; after moving one electrode width, the relative coverage area of the C 2 capacitor becomes zero.
  • the relative coverage area of the C 3 capacitor starts to change from large to small, and the relative coverage area of the C 4 capacitor changes from small to large.
  • the probe electrode After moving one electrode width, the relative coverage area of the C 3 capacitor becomes zero, and the relative coverage of the C 4 capacitor The area begins to change from large to small, and the relative coverage area of the d capacitor increases from small to large; thus, the movement of d, C 2 , C 3 , and C 4 changes periodically as a function of the mechanical period.
  • the probe electrode outputs a traveling wave signal Uo, and the fundamental wave expression is:
  • Ke is the electric field coupling coefficient
  • X is the relative displacement between the probe and the fixed length
  • W is 4 times the probe electrode width as shown in Fig. 5
  • the induced sinusoidal traveling wave signal Uo is fixed with the same phase
  • the frequency reference sinusoidal signal Ur is connected to the shaping circuit for processing, converted into two square wave signals of the same frequency, and then sent to the phase-phase circuit for processing, and the phase difference of the two signals is obtained by the high-frequency clock interpolation technique, and after calculation and processing
  • the linear displacement between the sensor probe base and the fixed base can be obtained.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

一种基于单排多层结构的电场式时栅直线位移传感器，包括测头基体（1）和定尺基体（2）两部分；测头基体（1）上有一排等间距的双正弦形电极（1-1）；定尺基体（2）上有一排矩形电极（2-1），电极（2-1）底部有定尺引线（2-2），电极（2-1）与引线（2-2）之间有绝缘层，形成一种多层结构；测头基体（1）与定尺基体（2）上下相对平行放置，并留有一定间隙δ；测头基体（1）与定尺基体（2）相对移动；定尺（2）一个周期内的4个电极分别连接相位为0°，90°，180°，270°的等幅等频正弦激励电压，测头电极（1）上产生的行波信号Uo与一路相位固定的同频参考信号Ur进行比相；两路信号的相位差由插补的时钟脉冲表示，再通过变换得到直线位移值。它功耗低，精度高，结构简单，对机械安装精度要求低，可实现大量程范围内的纳米精度测量。

Description

基于单排多层结构的电场式时栅直线位移传感器 技术领域
本发明属于精密直线位移测量传感器。
技术背景
在精密直线位移测量领域，近年来国内研制出了一种以时钟脉冲作为位移测量基 准的时栅传感器， 并在此基础上研制出了一种基于交变电场的时栅直线位移传感器。 此传感器专利于 2011年 12月 21 日公开， 专利名称： 一种基于交变电场的时栅直线 位移传感器， 专利号： 201110145967.5。
这种基于交变电场的时栅直线位移传感器采用了差动电容结构，要求通过两排电 极来形成两路驻波信号， 再由加法电路合成一路行波信号。两排电极信号之间会相互 干扰， 致使测量误差增大， 阻碍了精度的进一步提高。 在加工制造上难以保证两排电 极的一致性， 在安装上也难以保证两排电极的电场耦合强度一致， 造成两路驻波信号 振幅不一致， 带来测量误差， 对工业现场的适应性下降。
发明内容
本发明的目的在于针对上述现有技术的不足，提出一种基于单排多层结构的电场 式时栅直线位移传感器， 它采用基于单排多层结构的电极， 解决两排电极之间的信号 相互干扰问题， 避免加工及安装导致的两排电极不一致的问题； 利用电场耦合原理直 接获取行波信号， 无需加法电路； 因而可以减小测量误差， 降低对安装精度的要求， 简化系统结构。
本发明的技术方案如下：
基于单排多层结构的电场式时栅直线位移传感器，包括测头基体和定尺基体两部 分。
所述测头基体上设置有一排测头电极； 所述定尺基体上设置有一排定尺电极， 定 尺电极的第41! + 1号电极连成一组，11 = 0，1，2，3， .，组成八激励相，定尺电极的第411 + 2 号电极连成一组， 组成 B激励相， 定尺电极的第 4n + 3号电极连成一组， 组成 C激励 相， 定尺电极的第 4n + 4号电极连成一组， 组成 D激励相； 测头基体与定尺基体上下 相对平行布置， 测头基体的测头电极与定尺的定尺电极正对， 并留有一定间隙 δ， 形 成耦合电容。
测头基体与定尺基体相对移动； 测头电极与 A、 B、 C、 D 四个激励相的相对覆 盖面积将由无到小、 由小变大、 由大变小、 由小到无呈周期性变化， 电容值也随之相 应地呈周期性变化； 定尺的 A、 B、 C、 D四个激励相分别连接相位依次相差 90°的等 幅等频正弦激励电压 Ua、 Ub、 Uc、 Ud， 在测头电极上产生一路行波信号 Uo， 该行 波信号与一路相位固定的同频率参考信号 Ur经整形电路整形后， 由比相电路进行比 相； 两路信号的相位差由插补的高频时钟脉冲个数表示， 再经过标度变换得到测头基 体相对于定尺基体的直线位移值。
所述定尺上依次覆有 4层介质膜， 第一层为金属膜， 喷涂成 4条激励信号引线， 分别将 A、 B、 C、 D各个激励相的对应电极连成一组； 第二层为绝缘膜； 第三层为 金属膜， 喷涂成一排定尺电极； 第四层为绝缘保护膜。
进一步， 所述定尺电极形状为矩形且大小相同， 相邻两电极之间保持一定的绝缘 间距。
所述测头电极的形状为两个正弦上下对称形成的双正弦形，相邻测头电极之间通 过矩形引线连接， 测头电极长度略小于定尺电极长度， 宽度为一个定尺电极宽度与一 个绝缘间隔之和， 相邻两测头电极之间间隔 3个测头电极宽度。
具体地， 所述测头电极（1-1 )的形状是由 [Ο,π]区间上的正弦曲线与 X轴围成的区 域和 [π, 2π]区间上的正弦曲线与 X轴围成区域共同构成， 由此获得正对面积按正弦规 律变化的耦合电容， 进一步获取位移调制信号。
所述定尺的 Α激励相电极与测头电极形成耦合电容 d， B激励相号电极与测头 电极形成耦合电容 C2， C激励相电极与测头电极形成耦合电容 C3， D激励相电极与 测头电极形成耦合电容 C4 ; 所述耦合电容 d、 C2、 C3、 ^两两交替工作， 其中两个 电容工作时， 另外两个容值为零， 测头电极上输出行波信号 Uo。行波信号 Uo与同频 率参考信号 Ur经整形电路整形成方波后， 再进行比相。
本发明的技术方案是采用基于单排多层结构的电场耦合直接形成电行波的新方 法， 融合了现有的多种栅式位移传感器的优点。
本发明的有益效果是： 采用单排平行电容极板构建的交变电场进行测量， 利用交 流耦合电容结构的传感器测头，直接感应电行波，以高频时钟脉冲作为位移计量基准; 因此， 本传感器功耗低， 精度高， 可实现纳米精度的位移测量， 结构简单， 对机械安 装精度要求低， 对工业现场环境适应性强。 附图说明
图 1 ( a) 是定尺基体和测头基体上的电极示意图。
图 1 (b) 是定尺基体上的电极与测头基体上的电极的位置关系图。
图 2是定尺电极的信号连接关系图。
图 3是测头电极与定尺电极形成的耦合电容示意图。
图 4是本发明的电路模型原理图。
图 5是本发明信号处理原理框图。
具体实肺式
下面结合附图对本发明作进一步说明。
如图 1 ( a)、 图 1 (b)、 图 2、 图 3、 图 4所示， 本发明所述的传感器包括测头基 体 1和定尺基体 2两部分。采用陶瓷作为基体材料， 通过在陶瓷表面喷镀一层铁镍合 金作为电极。
在测头基体 1 上有 12 个测头电极， 即测头电极 1-1， 每个电极大小为 18mm* 1.1mm,形状为 [Ο,π]区间上的正弦曲线与 x轴围成的区域和 [π,2π]区间上的正弦 曲线与 X轴围成区域共同构成， 宽度为 1.8mm的矩形引线将各个测头电极相连。
在定尺基体上依次覆有 4层介质膜， 第一层为金属膜， 第二层为绝缘膜， 第三层 为金属膜， 第四层为绝缘保护膜； 第一层金属膜为 4条扁平带状导线， 即激励信号引 线 2-2， 分别将 A、 B、 C、 D各个激励相的对应电极连成一组， 第三层金属膜为一排 尺寸相同的矩形电极， 即定尺电极 2-1， 每个电极大小为 20mm* lmm， 相邻电极之间 的绝缘间距为 0.1mm。
定尺电极的第 1,5,9,〜,41,…号电极连成一组， 组成 A激励相， 在 A激励相加上 Ua =UmSin iy^ l]信号； 定尺电极的第 2,6,10,···, 42,…号电极连成一组， 组成 B激励 相， 在 B激励相加上 Ub =UmcoS iyt激励信号； 定尺电极的第 3,7,11,···, 43,···号电极连 成一组， 组成 C激励相， 在 C激励相加上 UC = -Umsin iyt激励信号； 定尺电极的第 4,8,12,···, 44,···号电极连成一组， 组成 D激励相， 在 D激励相加上 Ud = -Umcos iyt激 励信号。 其中激励信号峰值 Um = 5V， 频率 f = 40KHz， 角频率 w = 2;r f = 8 x 10 。
测头基体 1与定尺基体 2上下相对平行布置，测头电极 1-1与定尺电极 2-1正对， 并留有间隙 = 0.5mm。测头电极 1-1与定尺基体的 A激励相的电极形成耦合电容 Cl Q 测头电极 1-1与定尺基体的 B激励相的电极形成耦合电容 C2。测头电极 1-1与定尺基 体的 C激励相的电极形成耦合电容 C3。 测头电极 1-1与定尺基体的 D激励相的电极 形成耦合电容 C4。
如图 3和图 4所示，当测头基体 1向右移动时， d电容的相对覆盖面积由大变小， C2电容的相对覆盖面积由小变大； 移动一个电极宽度后， d 电容的相对覆盖面积变 为零， C2电容的相对覆盖面积开始由大变小， C3电容的相对覆盖面积由小变大； 再 移动一个电极宽度后， C2电容的相对覆盖面积变为零， C3电容的相对覆盖面积开始 由大变小， C4电容的相对覆盖面积由小变大； 又移动一个电极宽度后， C3电容的相 对覆盖面积变为零， C4电容的相对覆盖面积开始由大变小， d 电容的相对覆盖面积 由小变大； 如此完成一个机械周期的移动， d、 C2、 C3、 C4的电容值也随之相应地呈 周期性变化。 测头电极输出行波信号 Uo， 基波表达式为：
Uo = KeUm sin(i∑>t +— ) (1)
W
式中： Ke为电场耦合系数， X为测头和定尺之间的相对位移， W为 4倍测头电极宽度 如图 5所示，感应到的正弦行波信号 Uo与一路相位固定的同频参考正弦信号 Ur 接入整形电路处理， 转换为同频的两路方波信号后， 送入比相电路进行处理， 利用高 频时钟插补技术得到两路信号的相位差，经计算处理后即可得到传感器测头基体与定 尺基体之间的直线位移值。
以上所述仅为本发明的较佳实施例， 并不用以限制本发明， 凡在本发明的精神和 原则之内，所作的任何修改、等同替换、改进等， 均应包含在本发明的保护范围之内。

Claims

权 利 要 求 书
1. 一种基于单排多层结构的电场式时栅直线位移传感器， 包括测头基体 （1 ) 和定尺基体 (2) 两部分， 其特征是：
所述测头基体上设置有一排测头电极 （1-1 );
所述定尺基体上设置有一排定尺电极 （2-1 )， 定尺电极的第号电极连成一组，， 组成 A 激励 相， 定尺电极的第号电极连成一组， 组成 B激励相， 定尺电极的第号电极连成一组， 组成 C 激励相， 定尺电极的第号电极连成一组， 组成 D 激励相； 测头基体与定尺基体上下相对平 行布置， 测头基体的测头电极与定尺的定尺电极正对， 并留有一定间隙 δ ， 形成耦合电容； 测头基体与定尺基体相对移动； 定尺的 A、 B、 C、 D 四个激励相分别连接相位依次相差 90° 的等幅等频正弦激励电压 Ua、 Ub、 Uc、 Ud， 在测头电极上产生一路行波信号 Uo， 该 行波信号与一路相位固定的同频率参考信号 Ur 经整形电路整形后， 由比相电路进行比相； 两路信号的相位差由插补的高频时钟脉冲个数表示， 再经过标度变换得到测头基体相对于定 尺基体的直线位移值。
2. 根据权利要求 1 所述的基于单排多层结构的电场式时栅直线位移传感器， 其特征是： 所 述定尺基体上依次覆有 4层介质膜， 第一层为金属膜， 喷涂成 4条激励信号引线 （2-2)， 分 别将 A、 B、 C、 D 各个激励相的对应电极连成一组； 第二层为绝缘膜； 第三层为金属膜， 喷涂成一排定尺电极 （2-1 ); 第四层为绝缘保护膜。
3. 根据权利要求 1 所述的基于单排多层结构的电场式时栅直线位移传感器， 其特征是： 所 述定尺电极 （2-1 ) 形状为矩形且大小相同， 相邻两电极之间保持一定的绝缘间距。
4. 根据权利要求 1 所述的基于单排多层结构的电场式时栅直线位移传感器， 其特征是： 所 述测头电极 （1-1 ) 的形状为两个正弦上下对称形成的双正弦形， 相邻测头电极 （1-1 ) 之间 通过矩形引线连接， 测头电极长度略小于定尺电极长度， 宽度为一个定尺电极宽度与一个绝 缘间隔之和， 相邻两测头电极之间间隔三个测头电极宽度。
5. 根据权利要求 1 所述的基于单排多层结构的电场式时栅直线位移传感器， 其特征是： 所 述测头电极 （1-1 ) 的形状是由 [Ο,π ]区间上的正弦曲线与 X轴围成的区域和 [π , 2π ]区间上 的正弦曲线与 X轴围成区域共同构成， 相邻测头电极 （1-1 ) 之间通过矩形引线连接， 测头 电极长度略小于定尺电极长度， 宽度为一个定尺电极宽度与一个绝缘间隔之和， 相邻两测头 电极之间间隔三个测头电极宽度。
6. 根据权利要求 1 所述的基于单排多层结构的电场式时栅直线位移传感器， 其特征是： 所 述定尺电极 （2-1 ) 的 Α激励相电极与测头电极 （1-1 ) 形成耦合电容 d， B激励相电极与测 头电极 （1-1 ) 形成耦合电容 C2， C激励相电极与测头电极 （1-1 ) 形成耦合电容 C3， D激励 相电极与测头电极 （1-1 ) 形成耦合电容 C4; 所述循环交替变化的电容 d， C2， C3， c4两两 交替工作， 构成交变电场的耦合通道， 测头电极输出行波信号 u0。
7. 根据权利要求 1 所述的基于单排多层结构的电场式时栅直线位移传感器， 其特征是： 所 述行波信号 Uo与同频率参考信号 Ur经整形电路整形成方波后， 再进行比相。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US9995602B2 (en) 2013-11-29 2018-06-12 Chongqing University Of Technology Time grating linear displacement sensor based on alternating light field
US10359299B2 (en) 2014-05-09 2019-07-23 Chongqing University Of Technology Electric field type time-grating angular displacement sensors
US10495488B2 (en) 2014-03-19 2019-12-03 Chongqing University Of Technology Electric field time-grating linear displacement sensors based on single row multilayer structure
CN113008119A (zh) * 2019-12-19 2021-06-22 重庆理工大学 一种分时复用的绝对式时栅直线位移传感器
CN114608431A (zh) * 2022-03-29 2022-06-10 重庆理工大学 一种双层正弦式时栅直线位移传感器

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743838A (en) * 1983-10-27 1988-05-10 Mitutoyo Mfg. Co., Ltd. Capacitance displacement measuring instrument having wave shaped subelectrodes and multiplexer
JPH08278105A (ja) * 1995-04-03 1996-10-22 Mitsutoyo Corp 静電容量式センサ
JPH08327306A (ja) * 1995-05-29 1996-12-13 Mitsutoyo Corp 静電容量式変位検出装置
CN1254087A (zh) * 1998-11-13 2000-05-24 株式会社三丰 电容型位移测量装置
CN2869768Y (zh) * 2005-02-24 2007-02-14 张珂 一种基于电场合成原理的电容式线位移传感器
CN102288100A (zh) * 2011-06-01 2011-12-21 重庆理工大学 一种基于交变电场的时栅直线位移传感器
CN103822571A (zh) * 2014-03-19 2014-05-28 重庆理工大学 基于单排多层结构的电场式时栅直线位移传感器

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH550378A (de) * 1972-09-07 1974-06-14 Maag Zahnraeder & Maschinen Ag Vorrichtung zur kapazitiven winkel- oder laengenmessung.
DE3020411C2 (de) * 1980-05-27 1983-09-22 Hans Ulrich St.Sulpice Waadt Meyer Vorrichtung zum Messen der Verschiebung zweier Körper
GB2097128B (en) * 1981-04-16 1984-12-12 Medwin Albert H Electrical vernier measuring apparatus
US4633249A (en) * 1983-05-18 1986-12-30 Mitutoyo Mfg. Co., Ltd. Displacement detector utilizing change of capacitance
DE3340782C2 (de) * 1983-11-11 1985-12-05 Mauser-Werke Oberndorf Gmbh, 7238 Oberndorf Kapazitive Längen- und Winkelmeßeinrichtung
JPS61105421A (ja) * 1984-10-29 1986-05-23 Mitsutoyo Mfg Co Ltd 静電容量型エンコ−ダ
US4879508A (en) * 1986-04-04 1989-11-07 Mitutoyo Corporation Capacitance-type measuring device for absolute measurement of positions
CN1064754C (zh) * 1998-12-18 2001-04-18 赵飙 改进型电容性位移传感器
US6492911B1 (en) * 1999-04-19 2002-12-10 Netzer Motion Sensors Ltd. Capacitive displacement encoder
US6892590B1 (en) * 2003-11-04 2005-05-17 Andermotion Technologies Llc Single-balanced shield electrode configuration for use in capacitive displacement sensing systems and methods
KR100574510B1 (ko) 2004-05-11 2006-04-27 삼성전자주식회사 멤스 공정을 이용한 자기부상 구조물 및 그 제조방법
DE102004052587A1 (de) * 2004-10-29 2006-05-04 Martin Steffek Wegaufnehmer
CN100394143C (zh) 2006-03-24 2008-06-11 重庆工学院 齿电式时栅传感器
JP2009047547A (ja) 2007-08-20 2009-03-05 Tokai Rika Co Ltd 回転角度検出装置
CN101556138A (zh) 2008-09-27 2009-10-14 重庆工学院 一种时栅直线位移传感器
US20100148802A1 (en) * 2008-12-15 2010-06-17 Fanuc Ltd Capacitance-type encoder
DE102010046778B4 (de) * 2010-09-28 2017-11-02 Trw Automotive Electronics & Components Gmbh Kapazitiver Drehgeber
CN102425987B (zh) 2011-09-02 2013-07-10 重庆理工大学 一种基于交变电场的时栅角位移传感器
JP5956218B2 (ja) 2012-03-29 2016-07-27 ４Ｄセンサー株式会社 形状計測装置、形状計測方法及び形状計測装置における校正処理方法
CN103591896B (zh) 2013-11-29 2016-05-11 重庆理工大学 一种基于交变光场的时栅直线位移传感器
US9714846B2 (en) * 2013-12-31 2017-07-25 Chicago Dial Indicator Company Displacement measuring device with capacitive sensing
CN103968750B (zh) 2014-05-09 2017-01-18 重庆理工大学 一种电场式时栅角位移传感器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743838A (en) * 1983-10-27 1988-05-10 Mitutoyo Mfg. Co., Ltd. Capacitance displacement measuring instrument having wave shaped subelectrodes and multiplexer
JPH08278105A (ja) * 1995-04-03 1996-10-22 Mitsutoyo Corp 静電容量式センサ
JPH08327306A (ja) * 1995-05-29 1996-12-13 Mitsutoyo Corp 静電容量式変位検出装置
CN1254087A (zh) * 1998-11-13 2000-05-24 株式会社三丰 电容型位移测量装置
CN2869768Y (zh) * 2005-02-24 2007-02-14 张珂 一种基于电场合成原理的电容式线位移传感器
CN102288100A (zh) * 2011-06-01 2011-12-21 重庆理工大学 一种基于交变电场的时栅直线位移传感器
CN103822571A (zh) * 2014-03-19 2014-05-28 重庆理工大学 基于单排多层结构的电场式时栅直线位移传感器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9995602B2 (en) 2013-11-29 2018-06-12 Chongqing University Of Technology Time grating linear displacement sensor based on alternating light field
US10495488B2 (en) 2014-03-19 2019-12-03 Chongqing University Of Technology Electric field time-grating linear displacement sensors based on single row multilayer structure
US10359299B2 (en) 2014-05-09 2019-07-23 Chongqing University Of Technology Electric field type time-grating angular displacement sensors
CN107844119A (zh) * 2017-12-14 2018-03-27 中国计量大学 基于时空转换的视觉导引方法及视觉导引车
CN113008119A (zh) * 2019-12-19 2021-06-22 重庆理工大学 一种分时复用的绝对式时栅直线位移传感器
CN114608431A (zh) * 2022-03-29 2022-06-10 重庆理工大学 一种双层正弦式时栅直线位移传感器
CN114608431B (zh) * 2022-03-29 2023-06-09 重庆理工大学 一种双层正弦式时栅直线位移传感器

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