WO2015115685A1 - 요철형 질화갈륨층을 가진 알루미늄갈륨인듐인계 발광다이오드 및 그 제조 방법 - Google Patents
요철형 질화갈륨층을 가진 알루미늄갈륨인듐인계 발광다이오드 및 그 제조 방법 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 229910002601 GaN Inorganic materials 0.000 title description 59
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 abstract description 15
- 238000000605 extraction Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 130
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004451 qualitative analysis Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Definitions
- the present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to increase the light extraction efficiency of a light emitting diode, a GaN layer having a larger bandgap and a lower refractive index than that of an AlGaInP based material on an AlGaInP light emitting diode is manufactured in high quality. It is related to growing.
- AlGaInP-based light emitting diodes are semiconductor devices that convert injected electrical energy into light having a specific wavelength within a range of about 570-630 nm.
- the change in specific wavelength depends on the size of the band gap of the light emitting diode.
- the band gap size can be easily controlled by changing the composition ratio of Al and Ga. For example, the wavelength is shorter as the composition ratio of Al is increased. Lose.
- AlGaInP-based light emitting diodes are generally fabricated using metal organic chemical vapor deposition (MOCVD) systems that enable high quality thin film growth.
- MOCVD metal organic chemical vapor deposition
- AlGaInP-based light emitting diodes basically have a structure in which an undoped AlGaInP-based high efficiency active layer exists between an n-type AlGaInP material and a p-type AlGaInP material. Since the active layer, the n-type layer and the p-type layer have a relatively high resistance, each layer is grown to a thickness of less than 1 ⁇ m (total thickness ⁇ 3 ⁇ m), considering light emitting diodes used in general.
- the light efficiency of the AlGaInP-based light emitting diode is determined by the internal quantum efficiency and the light extraction efficiency, at least one of them must be increased to increase the light efficiency of the light emitting diode.
- Increasing the internal quantum efficiency is a method of increasing the emission area of the active layer to increase efficiency.
- a multilayer structure of the active layer, a current diffusion layer, and an electron-hole overflow prevention layer are mainly used.
- Increasing the light extraction efficiency is to increase the efficiency by allowing the light emitted from the active layer to escape to the outside of the light emitting diode, and the reflection film, photonic crystal, and surface irregularities (texturing) are used.
- An object of the present invention is to increase the light extraction efficiency of AlGaInP-based light emitting diodes.
- An object of the present invention is to provide an AlGaInP-based light emitting diode capable of increasing surface extraction by forming surface irregularities without using a chemical etching method.
- the present invention also aims to grow an uneven GaN layer on the surface of the light emitting diode without changing the growth system in the AlGaInP-based light emitting diode.
- AlGaInP-based light emitting diode is characterized in that the GaN layer is formed on the upper surface.
- the GaN layer is preferably an uneven GaN layer, and is preferably formed by vapor deposition.
- the GaN layer is formed on the top layer of light emitting diode epitaxial layers, and thus the upper surface may be a current spreading layer or a surface of a semiconductor layer.
- the GaN layer is a material layer having a relatively higher bandgap and a smaller refractive index than all materials used in the AlGaInP-based light emitting diodes, thereby increasing light extraction efficiency of the AlGaInP-based light emitting diodes.
- “having a relatively high band gap” means that the bandgap is larger than that of other growth materials of the AlGaInP-based light emitting diodes so as to transmit light emitted from the AlGaInP-based light emitting diodes without absorbing them.
- the GaN layer or the concave-convex GaN layer increases the light extraction efficiency by greatly reducing the amount of total reflection that is an obstacle to emitting light from the active layer to the outside of the light emitting diode.
- the term “concave-convex” means that a fine concave-convex pattern is formed on the surface, and may be understood as having a rough surface property.
- the GaN layer is grown at relatively low temperatures, preferably at about 400-700 ° C, more preferably at about 500-550 ° C. Therefore, a growth system of AlGaInP-based light emitting diodes grown at about 670-800 ° C. in a MOCVD system may be used to grow the GaN layer. That is, after growing the layers of the AlGaInP light emitting diode in the same MOCVD, it is possible to lower the temperature in the system and to grow the GaN layer on the top layer with high quality.
- the GaN layer may have a rough surface when excessively doped during growth.
- Excessive doping here may be defined as setting the precursor gas flow rate of the dopant, such as Mg, Si, Zn, to about 300 sccm or more, preferably about 400 sccm or more, upon deposition. As the flow rate of the precursor gas is increased, the surface tends to be rougher.
- the MOCVD system by growing a GaN layer having a predetermined thickness and growing an excessively doped GaN layer, a high quality GaN layer of irregularities can be grown.
- the GaN layer is preferably grown to have a thickness of 100 ⁇ 2000 nm.
- the GaN layer is preferably grown to have a thickness of 100 ⁇ 2000 nm.
- it is difficult to grow high quality under the influence of the rough buffer layer having a thickness of about 50 to 60 nm, and when it is thicker than the above range, an upper electrode having a thickness of about 2000 to 2300 nm is formed on the GaN layer. This is because they are buried and there is a high possibility of defects during final lamp packaging.
- the AlGaInP-based light emitting diode is produced by growing a first type AlGaInP-based semiconductor layer, an active layer and a second type AlGaInP-based semiconductor layer on a substrate, and then growing a GaN layer, preferably irregularities, on the substrate.
- the first type and the second type means n type and p type, or p type and n type, respectively.
- the growth may be performed by techniques known in the art such as MOCVD, and the uneven GaN layer may be grown by depositing in an excessive doping environment in which GaN is defined as described above.
- a DBR layer is grown between the substrate and the first type semiconductor layer, and a current diffusion layer is grown between the second type semiconductor layer and the GaN layer.
- an upper electrode is deposited thereon and a lower electrode is deposited below the substrate.
- the part where the electrode is to be formed in the GaN layer is removed by, for example, etching, and then the upper electrode is removed. Is deposited.
- a GaN layer having a high band gap and a low refractive index may be grown on the upper surface of the AlGaInP based light emitting diode to increase light extraction efficiency of the AlGaInP based light emitting diode.
- the GaN layer can be grown immediately in an uneven form under the same system after the growth of the AlGaInP-based light emitting diode without chemical etching treatment or additional process, the efficiency of the light emitting diode can be stably maintained without generating defects or contamination of the light emitting diode. Can be greatly increased, and additional process steps for the formation of irregularities are eliminated.
- FIG. 1 is a cross-sectional view schematically showing the structure of a conventional AlGaInP-based light emitting diode (a) manufactured by a MOCVD system and an AlGaInP-based light emitting diode (b) to which an uneven GaN layer according to the present invention is applied.
- FIG. 2 (a) is an electron microscope surface photograph of an AlGaInP-based light emitting diode having an uneven GaN layer according to the present invention, (b) is an electron showing a vertical structure of the GaP window layer and the uneven GaN layer in the light emitting diode It is a microscope side photograph, (c) is a graph which shows qualitative analysis data about a part of (a) photograph.
- FIG. 3 is a light emission schematic diagram of a conventional AlGaInP-based light emitting diode (a), an AlGaInP-based light emitting diode (b) to which a flat GaN layer according to the present invention is applied, and an AlGaInP-based light emitting diode (c) to which an uneven GaN layer is applied. .
- FIG. 4 shows PL (photo-luminescence) of an AlGaInP-based light emitting diode (a) having a conventional AlGaInP-based light emitting diode (a) and a flat GaN layer according to the present invention, and an AlGaInP-based light emitting diode (c) having an uneven GaN layer. ) This is a graph showing the characteristics.
- FIG. 1 schematically shows the structure of a conventional AlGaInP-based light emitting diode (a) fabricated by a MOCVD system and an AlGaInP-based light emitting diode (b) to which an uneven GaN layer 2 according to the present invention is applied.
- Conventional AlGaInP light emitting diodes (a) and AlGaInP light emitting diodes (a) according to the invention are both a reflective layer (7), a lower limiting layer (6), an active layer (5), an upper limiting layer (4) and a substrate on a substrate (8).
- the window layer 3 has a layer structure in which the window layer 3 is sequentially grown and stacked.
- the lower electrode 9 is formed on the lower surface of the substrate 8, and the upper electrode 1 is formed on the upper surface of the window layer 3. Specific formation thereof may be performed according to a manufacturing process of AlGaInP light emitting diodes known in the art.
- the active layer 5 is (Al x Ga 1 -x ) 1-y In y P layer.
- the active layer 5 may be applied to a single layer, a quantum well structure, a multi-quantum well structure, etc. as necessary.
- the active layer 5 is composed of a plurality of layers, and multi-quantum wells are formed throughout the active layer as the layer is formed while changing the x value.
- the lower limiting layer 6 is an n-type AlGaInP layer and the upper limiting layer 4 is a p-type AlGaInP layer.
- the substrate 8 is an n-type GaAs substrate. Since the GaAs substrate is light absorbing, the light emitted from the active layer 4 toward the lower side or the substrate direction is absorbed by the GaAs substrate, thereby degrading the efficiency of the light emitting diode. Thus, as will be appreciated by those skilled in the art, in order to increase the luminous efficiency without removing the GaAs substrate, the reflective layer 7 composed of a plurality of layers is grown on the substrate 8, thereby moving from the active layer 4 to the substrate 8 direction. The light emitted by the light is reflected in the front (upper) direction.
- the reflective layer 7 is a distributed Bragg reflector (DBR) layer, which is AlGaInP / AlGaInP depending on the emission wavelength of the light emitting diode according to the composition ratio of the (Al x Ga 1-x ) 1-y In y P layer, which is the active layer 4. And a repeating multilayer structure selected from AlAs / AlGaAs, AlAs / GaAs, AlAs / AlGaInP, and the like.
- DBR distributed Bragg reflector
- the upper window layer 3 formed on the upper limiting layer 4 is essentially formed as a layer for current spreading and is formed of a transparent, low resistivity material, preferably a p-type GaP layer.
- the window layer 3 is grown to a thickness of several to tens of microns, preferably about 15 ⁇ m or more, for the effect of current spreading and enlargement of the upper side emission cone region.
- the upper electrode 1, which serves to apply an anode voltage to the active layer 5, and the lower electrode 9, which serves to apply a cathode voltage to the active layer 5, are formed of AuGe, which is an AlGaInP-based ohmic contact material.
- AuBe can be used respectively, and examples of additional electrode materials are well known in the art.
- the AlGaInP-based light emitting diode (b) has a structure in which a GaN layer, preferably an uneven GaN layer 2, is grown on the window layer 3.
- the uneven GaN layer 2 is applied to increase light extraction efficiency of the light emitting diode, and is used on a MOCVD system used for growing another layer of the AlGaInP-based light emitting diode (b) without using a separate processor or equipment. Can be grown.
- FIG. 2 is an electron micrograph of an AlGaInP-based light emitting diode having an uneven GaN layer manufactured according to the present invention
- (a) is a photograph showing an upper surface
- (b) is a side photograph showing a GaN layer grown on a window layer.
- (C) shows qualitative analysis data for a part of surface photograph (a).
- the uneven GaN layer was grown by depositing a high-quality GaN layer of a certain thickness at 500 ° C., TMGa 150 sccm, and NH 3 45000 sccm in a MOCVD system, and then depositing a GaN layer while flowing Cp2Mg at about 400 sccm in the same growth environment. .
- the surface of the GaN layer has a myriad of curvatures and forms a fine concavo-convex pattern.
- the uneven GaN layer having a thickness of about 370 nm is grown evenly on the window layer GaP.
- the qualitative analysis showed that the "N” detection mark was confirmed in the layer grown on the GaP window layer. Since the AlGaInP-based light emitting diode does not use “N” material during growth, it may be determined that the material grown on the GaP window layer with high quality is GaN.
- FIG. 3 is a view showing how the emission of light generated from the active layer varies depending on the presence or absence of a GaN layer.
- (b) and the different routes of the light emitted from the AlGaInP-based light emitting diode (c) to which the uneven GaN layer is applied are schematically shown.
- the light emitting diode (a) light generated from the point light source of the active layer is emitted to the outside of the light emitting diode through the upper limiting layer and the window layer having different refractive indices, and a considerable amount of light is reflected at the surface boundary of the window layer. It is directed to the inside of the light emitting diode.
- the light reflected at the surface interface is considerably reduced compared to the light emitting diode (a) due to the smaller refractive index of the GaN material.
- a large critical angle is provided due to the minute uneven pattern of the surface, thereby further reducing the light reflected into the inside of the light emitting diode by total reflection.
- FIG. 4 shows optical luminescence (PL) characteristics measured at each light emitting diode having the structure illustrated in FIG. 3.
- PL optical luminescence
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Abstract
Description
Claims (6)
- GaP 윈도우층의 상부 표면에 전극주변에 GaN층이 위치하는 것을 특징으로 하는 AlGaInP계 발광다이오드.
- 청구항 1에 있어서, 상기 GaN층은 요철형 GaN층인 것을 특징으로 하는 AlGaInP계 발광다이오드.
- 청구항 1 또는 2에 있어서, 상기 GaN층은 100-2000 nm의 두께를 갖는 것을 특징으로 하는 AlGaInP계 발광다이오드.
- 기판 위에 제1형 AlGaInP계 반도체층, 활성층 및 제2형 AlGaInP계 반도체층을 성장시키는 단계;상기 제2형 AlGaInP계 반도체층 상부에 GaP 윈도우층을 성장시키는 단계; 및상기 GaP 윈도우층의 표면에 GaN층을 성장시키는 단계;를 포함하는 것을 특징으로 하는 AlGaInP계 발광다이오드 제조 방법.
- 청구항 4에 있어서, 상기 GaN층은 요철형 GaN층이고 표면의 요철 패턴 형성을 위해 과도한 도핑 환경에서 성장된 것을 특징으로 하는 AlGaInP계 발광다이오드 제조 방법.
- 청구항 4 또는 청구항 5에 있어서, 상기 제1형 AlGaInP계 반도체층의 성장시키기 전에 DBR층을 성장시키는 단계를 더 포함하는 것을 특징으로 하는 AlGaInP계 발광다이오드 제조 방법.
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US15/114,066 US10381517B2 (en) | 2014-01-29 | 2014-01-29 | Aluminum-gallium-indium-phosphorus-based light emitting diode having gallium nitride layer of uneven type and method for manufacturing same |
CN201480074567.1A CN106663720A (zh) | 2014-01-29 | 2014-01-29 | 具有凹凸型氮化镓层的铝镓铟磷系发光二极管及其制造方法 |
JP2016549418A JP6425731B2 (ja) | 2014-01-29 | 2014-01-29 | 凹凸状窒化ガリウム層を有するアルミニウムガリウムインジウムリン系発光ダイオードの製造方法 |
PCT/KR2014/000848 WO2015115685A1 (ko) | 2014-01-29 | 2014-01-29 | 요철형 질화갈륨층을 가진 알루미늄갈륨인듐인계 발광다이오드 및 그 제조 방법 |
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US20230107932A1 (en) * | 2021-09-30 | 2023-04-06 | Chanel Parfums Beaute | Casing for a refillable container device for cosmetic product and associated container device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020079659A (ko) * | 2002-09-05 | 2002-10-19 | 에피밸리 주식회사 | 질화갈륨계 반도체 엘이디 소자 |
KR100631981B1 (ko) * | 2005-04-07 | 2006-10-11 | 삼성전기주식회사 | 수직구조 3족 질화물 발광 소자 및 그 제조 방법 |
JP2010050487A (ja) * | 2009-11-24 | 2010-03-04 | Sharp Corp | 窒化物系半導体発光素子 |
US20100295014A1 (en) * | 2006-08-16 | 2010-11-25 | Xuejun Kang | Improvements in external light efficiency of light emitting diodes |
KR101282775B1 (ko) * | 2006-11-03 | 2013-07-05 | 엘지이노텍 주식회사 | 수직형 발광 소자 및 그 제조방법 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08186292A (ja) * | 1994-12-27 | 1996-07-16 | Nkk Corp | Ledアレイおよびその製造方法 |
JP2004095827A (ja) * | 2002-08-30 | 2004-03-25 | Shurai Kagi Kofun Yugenkoshi | 発光ダイオード |
JP2004297060A (ja) * | 2003-03-12 | 2004-10-21 | Showa Denko Kk | 発光ダイオード素子とその製造方法 |
US6806112B1 (en) * | 2003-09-22 | 2004-10-19 | National Chung-Hsing University | High brightness light emitting diode |
JP4092658B2 (ja) | 2004-04-27 | 2008-05-28 | 信越半導体株式会社 | 発光素子の製造方法 |
JP2006270001A (ja) * | 2005-03-25 | 2006-10-05 | Tokyo Univ Of Science | 光取り出し効率及び放熱効果が改善された半導体発光素子およびその製造方法 |
TWI285970B (en) * | 2005-08-26 | 2007-08-21 | Arima Optoelectronics Corp | Window interface layer structure of LED |
JP2007088351A (ja) | 2005-09-26 | 2007-04-05 | Hitachi Cable Ltd | 発光ダイオード用エピタキシャルウェハおよび発光ダイオード |
JP4835377B2 (ja) * | 2006-10-20 | 2011-12-14 | 日立電線株式会社 | 半導体発光素子 |
JP4835376B2 (ja) * | 2006-10-20 | 2011-12-14 | 日立電線株式会社 | 半導体発光素子 |
JP4980041B2 (ja) | 2006-12-21 | 2012-07-18 | ローム株式会社 | 半導体発光素子 |
JP2008166400A (ja) * | 2006-12-27 | 2008-07-17 | Hitachi Cable Ltd | 発光素子、発光素子用エピタキシャルウェハ及びその製造方法 |
JP5453780B2 (ja) * | 2008-11-20 | 2014-03-26 | 三菱化学株式会社 | 窒化物半導体 |
JP5117596B2 (ja) * | 2011-05-16 | 2013-01-16 | 株式会社東芝 | 半導体発光素子、ウェーハ、および窒化物半導体結晶層の製造方法 |
US8664679B2 (en) * | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
US9012921B2 (en) * | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
KR20130131966A (ko) * | 2012-05-25 | 2013-12-04 | 삼성전자주식회사 | 반도체 발광소자 |
CN103325908B (zh) | 2013-05-25 | 2017-08-29 | 集美大学 | 一种六角形粗化表面的led外延片的制备方法 |
-
2014
- 2014-01-29 CN CN201480074567.1A patent/CN106663720A/zh active Pending
- 2014-01-29 WO PCT/KR2014/000848 patent/WO2015115685A1/ko active Application Filing
- 2014-01-29 JP JP2016549418A patent/JP6425731B2/ja not_active Expired - Fee Related
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020079659A (ko) * | 2002-09-05 | 2002-10-19 | 에피밸리 주식회사 | 질화갈륨계 반도체 엘이디 소자 |
KR100631981B1 (ko) * | 2005-04-07 | 2006-10-11 | 삼성전기주식회사 | 수직구조 3족 질화물 발광 소자 및 그 제조 방법 |
US20100295014A1 (en) * | 2006-08-16 | 2010-11-25 | Xuejun Kang | Improvements in external light efficiency of light emitting diodes |
KR101282775B1 (ko) * | 2006-11-03 | 2013-07-05 | 엘지이노텍 주식회사 | 수직형 발광 소자 및 그 제조방법 |
JP2010050487A (ja) * | 2009-11-24 | 2010-03-04 | Sharp Corp | 窒化物系半導体発光素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230107932A1 (en) * | 2021-09-30 | 2023-04-06 | Chanel Parfums Beaute | Casing for a refillable container device for cosmetic product and associated container device |
Also Published As
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US10381517B2 (en) | 2019-08-13 |
US20160372633A1 (en) | 2016-12-22 |
JP2017504975A (ja) | 2017-02-09 |
CN106663720A (zh) | 2017-05-10 |
JP6425731B2 (ja) | 2018-11-21 |
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