WO2015115649A1 - Complexe de carbure de silicium, procédé de fabrication associé, et composant de dissipation thermique utilisant ledit complexe - Google Patents

Complexe de carbure de silicium, procédé de fabrication associé, et composant de dissipation thermique utilisant ledit complexe Download PDF

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WO2015115649A1
WO2015115649A1 PCT/JP2015/052880 JP2015052880W WO2015115649A1 WO 2015115649 A1 WO2015115649 A1 WO 2015115649A1 JP 2015052880 W JP2015052880 W JP 2015052880W WO 2015115649 A1 WO2015115649 A1 WO 2015115649A1
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composite
silicon carbide
thickness
plate
heat dissipation
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PCT/JP2015/052880
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English (en)
Japanese (ja)
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元徳 紀
秀樹 広津留
宮川　健志
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電気化学工業株式会社
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Priority to US15/115,955 priority Critical patent/US20170162469A1/en
Priority to EP15743322.8A priority patent/EP3104406B1/fr
Priority to JP2015560068A priority patent/JPWO2015115649A1/ja
Priority to CN201580007131.5A priority patent/CN105981162A/zh
Publication of WO2015115649A1 publication Critical patent/WO2015115649A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738—Semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
    • B23P15/26—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass heat exchangers or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P2700/00—Indexing scheme relating to the articles being treated, e.g. manufactured, repaired, assembled, connected or other operations covered in the subgroups
    • B23P2700/10—Heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention is a highly thermally conductive silicon carbide composite material that is excellent in heat conduction characteristics and lightweight, and that is suitable as a heat radiating member such as a heat sink of a semiconductor component such as a ceramic substrate or an IC package, a method for producing the same, and a method for producing the same Related to heat dissipation parts.
  • a semiconductor element is usually used by being mounted on an insulating substrate such as a ceramic substrate.
  • the heat generated from the semiconductor element is diffused to the outside through a heat dissipation component called a heat sink provided on the back surface of the substrate or the like to ensure the operating characteristics of the semiconductor element.
  • Copper has been mainly used as the heat sink material. Copper has a high thermal conductivity of about 390 W / mK near room temperature, but has a large thermal expansion coefficient of 17 ⁇ 10 ⁇ 6 / K, a ceramic substrate (thermal expansion coefficient: 7 to 8 ⁇ 10 ⁇ 6 / K), and a heat sink. Due to the difference in thermal expansion of the ceramic substrate, cracks, cracks, etc. may occur in the ceramic substrate due to heat bonding or thermal cycle load. Conventionally, when a ceramic substrate is used as a heat dissipation component in a field where reliability is required, Mo or W or the like having a small difference in thermal expansion coefficient from the ceramic substrate has been used as a heat sink.
  • the heat sink made of Mo or W as described above is excellent in reliability, but has a low thermal conductivity of 150 W / mK, has a problem in terms of heat dissipation characteristics, and such a heat sink is expensive.
  • MMC Metal-ceramic composite
  • Such composites are generally formed by preforming inorganic fibers or particles that are reinforcing materials to form a preform and infiltrating the metal that is the base material between the fibers or particles of the preform. Complex.
  • the reinforcing material ceramics such as alumina, silicon carbide, aluminum nitride, silicon nitride, silica, and carbon are used.
  • the wettability between the reinforcing material ceramic and the base material alloy, the reaction layer at the interface, etc. also greatly contribute to the thermal conductivity.
  • Japanese Patent No. 3468358 Japanese Patent Publication No. 5-507030 JP-A-9-157773 Japanese Patent Laid-Open No. 10-335538
  • metal-ceramic composites have been studied in order to solve the above-mentioned problems.
  • it is necessary to mold the preform with a high molding pressure which leads to an increase in cost and difficulty in sufficient impregnation of the alloy thereafter.
  • development of a technology capable of providing a metal-ceramic composite having a thermal expansion coefficient close to that of a ceramic substrate and having a high thermal conductivity at a low cost is demanded.
  • a composite when such a composite is used as a heat dissipation component, it is used by soldering to a circuit board. Therefore, if the amount of warping of the composite is too large, soldering becomes difficult. For this reason, when using such a composite as a heat dissipation component, it is necessary to control the amount of warpage to a predetermined amount or less.
  • components such as a power module incorporating such a heat dissipation component are generally used by being screwed to a heat dissipation fin or the like.
  • the joint surface is convex so that stress acts on the joint surface between the component such as the power module and the radiating fin because the tightening force after screwing is large and the surface is radiated.
  • the metal-ceramic composite in order to arbitrarily add a shape such as warp, there is only a method of adjusting by post-processing. In this case, the metal-ceramic composite has a problem that it is very hard, the processing cost is high, and the part itself becomes very expensive.
  • the present invention has been made in view of the above circumstances, and has high thermal conductivity, a low specific gravity, a thermal expansion coefficient close to that of a ceramic substrate, has a warp, and has good adhesion to a heat dissipation component or the like.
  • An object of the present invention is to provide a composite to be joined and a heat dissipation component using the composite at a low cost.
  • the present inventors have found that by adjusting the composition and structure of the composite, it is possible to control the characteristics such as the coefficient of thermal expansion and the shape of the composite. It has been completed.
  • the present invention is a plate-like composite formed by pressure impregnating a porous silicon carbide molded body with a metal containing aluminum, the plate thickness t is 2 mm to 6 mm, and the in-plane thickness variation is t It is a silicon carbide based composite characterized by being within ⁇ 0.3 mm.
  • the present invention has four or more holes for screwing the other surface of the plate composite to the other heat radiation component with the convex surface of the plate composite being screwed.
  • the warp (Cx; ⁇ m) with respect to the length of 10 cm and the warp amount (Cy; ⁇ m) with respect to the length of 10 cm in the direction perpendicular to the length (Y direction) are 50 ⁇ Cx ⁇ 250 and 0 ⁇ Cy ⁇ 200
  • a warpage amount in a power module using the plate composite is 50 ⁇ Cx ⁇ 250 and 0 ⁇ Cy ⁇ 200.
  • both the front and back surfaces of the plate-like composite are covered with a metal layer mainly composed of aluminum having an average thickness of 10 to 110 ⁇ m, and the difference in average thickness between the front and back metal layers is 100 ⁇ m or less.
  • the plate-like composite is composed of the composite part (A) and a metal layer (B) mainly composed of aluminum provided on at least one side of the composite, and the thickness of the composite part (A) Carbonization characterized in that the ratio (TA / TB) of the total (TB; ⁇ m) of the average thickness (TA; ⁇ m) and the average thickness of both surfaces of the metal layer (B) is 10 to 30 It is a silicon composite.
  • the amount of warpage with respect to the length of 10 cm of the main surface of the composite is 50 to 250 ⁇ m, and the average value (TB1; ⁇ m) of the thickness on the front side of the metal layer (B) and the thickness on the back side.
  • ) of the difference from the average value (TB2; ⁇ m) and the maximum length (L; cm) of the composite is 500 or more and 2000 or less It is a silicon composite.
  • the present invention is a method for producing a silicon carbide based composite, characterized in that warping is performed by applying a stress to the silicon carbide composite at a temperature of 350 ° C. or more to cause plastic deformation.
  • the average thermal expansion coefficient when heated from room temperature (25 ° C.) to 150 ° C. is 9 ⁇ 10 ⁇ 6 / K or less, and the thermal conductivity at room temperature (25 ° C.) is 150 W / mK or more. It is a silicon carbide based composite that is characterized.
  • the present invention is a heat dissipating component characterized by joining a ceramic substrate for mounting a semiconductor to a plate-like composite.
  • the present invention is a heat dissipation component characterized in that the ceramic substrate is aluminum nitride and / or silicon nitride.
  • the present invention is characterized in that 90% or more of the surfaces are in close contact with each other when the surface to which the ceramic substrate is not bonded is attached to the flat plate through the heat dissipating grease under the condition that the tightening torque is 2N or more. It is said heat dissipation component.
  • the composite of the present invention is formed by impregnating a silicon carbide porous body with a metal containing aluminum, the processing cost of the composite can be reduced, the thermal conductivity is high, and the average thermal expansion coefficient is close to that of a ceramic substrate.
  • a low-cost heat radiating component that is excellent in reliability and suitable for a mobile device such as an electric automobile, as a heat radiating component that is lightweight and has a feature of being bonded to a ceramic substrate for semiconductor mounting.
  • the composite of the present invention has a specific amount of warpage, and, for example, when used as a heat radiating plate, the ceramic substrate can be screwed and fixed to a heat radiating component such as a heat radiating fin with good adhesion. The heat dissipation is stable. Therefore, there is an effect that a highly reliable module can be formed, which is extremely useful industrially.
  • the coefficient of thermal expansion of the metal-ceramic composite is usually determined by the coefficient of thermal expansion of the ceramic that is the reinforcing material and the metal that is the base material and the blending ratio thereof.
  • the thermal expansion coefficient of ceramics is considerably smaller than that of metals, and increasing the ceramic ratio is effective in reducing the thermal expansion coefficient of the composite.
  • the thermal conductivity of the metal-ceramic composite is basically determined by the thermal conductivity of the ceramic as the reinforcing material and the metal as the base material and its blending ratio. The bonding state at the interface with the substrate greatly contributes. Ceramics and metals generally have higher thermal conductivity, but silicon carbide (SiC), aluminum nitride (AlN), boron nitride (BN), etc.
  • ceramics mainly composed of silicon carbide are suitable for producing a metal-ceramic composite having both high thermal conductivity and low thermal expansion coefficient. It was.
  • the wettability between the reinforcing material and the metal is important for obtaining a dense composite.
  • the melting point of the metal to be impregnated is high, the temperature at the time of impregnation increases, and the ceramics may be oxidized, or the ceramics and the metal may react to form a compound that is not preferable in terms of characteristics.
  • the melting point of the metal that is the base material is high, the impregnation temperature increases, so that the material such as the mold material is limited, the casting cost itself increases, and the resulting composite becomes expensive.
  • the present inventors have found that a good composite can be produced by using an alloy mainly composed of aluminum. That is, the composite of the present invention is obtained by impregnating silicon carbide powder or a silicon carbide porous body with a metal mainly composed of aluminum.
  • the properties of the metal-ceramic composite are determined by the properties of the ceramic as the reinforcing material and the metal as the base material and the blending ratio.
  • the silicon carbide content in the composite of the present invention is preferably 50 to 80% by volume, more preferably 60 to 70% by volume. When the content of silicon carbide is less than 50% by volume, the composite has a high coefficient of thermal expansion, and a heat-radiating component with high reliability targeted by the present invention cannot be obtained. Further, increasing the content of silicon carbide is effective in terms of the high thermal conductivity and low thermal expansion coefficient of the composite, but a very high molding pressure is required when filling over 80% by volume. The cost of the metal-ceramic composite obtained is extremely high.
  • the metal in the silicon carbide based composite of the present invention is an alloy mainly composed of aluminum, and preferably contains 20% by mass or less of silicon and 5% by mass or less of magnesium.
  • the metal components other than aluminum, silicon, and magnesium in the alloy copper or the like can be contained as long as the characteristics of the alloy do not change extremely.
  • the silicon carbide based composite of the present invention is characterized in that the plate thickness t is 2 mm to 6 mm, and the in-plane thickness variation is within t ⁇ 0.3 mm. If the plate thickness is less than 2 mm, when used as a heat dissipation component, the heat dissipation performance in the surface direction of the silicon carbide composite is lowered, and the heat dissipation performance of the heat dissipation component is decreased, which is not preferable. On the other hand, if the plate thickness exceeds 6 mm, the thermal resistance of the silicon carbide composite itself increases, and the heat dissipation performance of the heat dissipation component decreases, which is not preferable.
  • in-plane thickness variation is outside the range of t ⁇ 0.3 mm, components such as a power module incorporating a heat dissipation component made of the silicon carbide composite are screwed to a heat dissipation fin and used. In such a case, an air gap is formed at the joint surface between the power module and other parts and the heat radiating fins, and the heat radiation performance is lowered.
  • “In-plane thickness variation falls within t ⁇ 0.3 mm” means that the maximum value is obtained when the thickness of the composite is measured at a plurality of locations and the average thickness of the composite is calculated from the average value to be 0. And the minimum value is within ⁇ 0.3 mm.
  • the present invention essentially has a warpage amount of 250 ⁇ m or less with respect to a length of 10 cm of the main surface of the composite.
  • the amount of warpage with respect to the length of 10 cm of the main surface of the composite exceeds 250 ⁇ m
  • the composite of the present invention is used as a heat dissipation component, a problem of poor bonding with a circuit board or the like occurs.
  • screws are attached to fins or the like, an excessive bending stress is applied and the composite is damaged.
  • components such as a power module incorporating a heat dissipation component made of such a composite are used by being screwed to a heat dissipation fin or the like.
  • the joint surface is convex so that stress acts on the joint surface between the component such as the power module and the radiating fin because the tightening force after screwing is large and the surface is radiated.
  • the convex surface can be formed by utilizing the warp generated when the composite is manufactured, or can be formed by forcibly using the jig shown in FIG.
  • the second aspect of the present invention is that the main surface of the plate-like composite has four or more holes so that it can be screwed to other heat radiating components.
  • the shape of the hole may be appropriately selected depending on the size of the heat radiating component or the like, but generally may be a size that can be penetrated by M6 to M10 screws.
  • the number of the holes a large number of four or more can be provided according to the size of the heat radiating plate, but when the number is three or less, the entire surface of the heat radiating plate cannot necessarily be in close contact with other heat radiating components.
  • the formation location of a hole can be selected arbitrarily, it can form in the corner
  • 0 ⁇ Cx ⁇ 250, and 0 ⁇ Cy ⁇ 300 is essential.
  • the warpage amount of the power module using the plate composite is 50 ⁇ Cx ⁇ 250 and 0 ⁇ Cy ⁇ 200. It becomes.
  • the direction between the holes (X direction) indicates one direction of the surface of the heat sink illustrated in FIGS. 1A to 1D, and the Y direction is perpendicular to the X direction in the surface. Shows direction.
  • the present invention is composed of a composite when the warping amounts (Cx; ⁇ m and Cy; ⁇ m) are in the specific range.
  • the present inventors have obtained the knowledge that the heat radiating plate can be screwed and fixed to other heat radiating components with good adhesion, and the present invention has been achieved.
  • the heat radiating plate is generally fixed between the heat radiating plate and the heat radiating component via heat radiating grease or the like.
  • the absolute value of the warp amount (Cy) in the Y direction is smaller than the thickness of the heat dissipation grease.
  • the warpage amount (Cy) in the Y direction is smaller than the warpage amount (Cx) in the X direction.
  • the third invention of the present invention is a plate-like composite in which an alloy layer (B) mainly composed of aluminum is bonded to both surfaces of the plate-like composite (A). Since the surface portion is covered with an alloy layer containing aluminum as a main component, when processing the surface portion, it is only necessary to process the metal portion, and the load during processing can be greatly suppressed. If there is a metal-ceramic composite on the surface portion, only that portion is hard, the processing becomes uneven, and it is necessary to use an expensive processing jig such as diamond. Moreover, the uniformity in the case of performing a plating process improves because the surface part is a metal layer. For the above reason, the average thickness of the metal layer is selected to be 10 ⁇ m or more.
  • the metal layer is made of a metal mainly composed of aluminum, the coefficient of thermal expansion is larger than that of the metal-ceramic composite part. Therefore, if the thickness of the metal layer increases, the thermal expansion coefficient of the entire composite increases, so the average thickness of the metal layer is selected to be 110 ⁇ m or less.
  • the heat sink can be attached with good adhesion if the distance between the holes is 10 cm or less.
  • the amount of warp with respect to the length of 10 cm of the main surface of the composite is 100 ⁇ m or less.
  • the fourth invention of the present invention is the ratio (TA /) of the average value (TA) of the thickness of the plate-like composite (A) and the total (TB) of the average values of the thicknesses of the front and back alloy layers.
  • TB is a complex having 5 to 30, preferably 10 to 30.
  • TA / TB is less than 5
  • the thickness of the alloy layer on the surface becomes too thick, and the characteristics such as thermal expansion coefficient and thermal conductivity are deteriorated.
  • TA / TB exceeds 30, the surface alloy layer becomes too thin, and when the surface portion is machined or the like, the plate-like composite is partially exposed and the processing jig is damaged.
  • problems such as deterioration of plating characteristics occur.
  • TA / TB is 30 or less. There must be.
  • the amount of warpage with respect to a length of 10 cm of the main surface of the composite is 50 to 250 ⁇ m
  • the average thickness (TB1; ⁇ m) of the surface side of the alloy layer (B) and the thickness on the back side are 500 ⁇ (TB1-TB2) ⁇ L ⁇ 2500, preferably 500 ⁇ (TB1-TB2) ⁇ L ⁇ 2000.
  • the joint surface is convex so that stress acts on the joint surface between the component such as the power module and the radiating fin because the tightening force after screwing is large and the surface is radiated.
  • the amount of warping with respect to the length of 10 cm of the main surface of the composite is less than 50 ⁇ m, the amount of warping when used as a heat-radiating component or the like is insufficient, and a problem may occur in heat dissipation characteristics.
  • the amount of warpage of the composite is preferably 50 to 250 ⁇ m with respect to a length of 10 cm of the main surface of the composite.
  • the amount of warpage with respect to the length of 10 cm of the main surface of the composite exceeds 250 ⁇ m
  • the composite of the present invention is used as a heat dissipation component, a problem of poor bonding with a circuit board or the like occurs.
  • screws are attached to fins or the like, an excessive bending stress is applied and the composite is damaged.
  • components such as a power module incorporating a heat dissipation component made of such a composite are used by being screwed to a heat dissipation fin or the like.
  • the joint surface is convex so that stress acts on the joint surface between the component such as the power module and the radiating fin because the tightening force after screwing is large and the surface is radiated. For this reason, if the amount of warpage with respect to the length of 10 cm of the main surface of the composite is less than 50 ⁇ m, the amount of warpage when used as a heat dissipation component is insufficient, and the object of the present invention may not be achieved.
  • the present invention provides a silicon carbide based composite characterized in that warping is performed by plastically deforming the plate-shaped composite by applying a stress perpendicular to the main surface at a temperature of 350 ° C. or higher. Is the method.
  • warping is performed by plastically deforming the plate-shaped composite by applying a stress perpendicular to the main surface at a temperature of 350 ° C. or higher.
  • a plate-like composite having the desired warpage amount can be easily obtained.
  • a method in which the composite is pressed against a mold having an inner surface of a desired shape in advance is preferable with high reproducibility.
  • the metal mainly composed of aluminum in the composite does not substantially plastically deform, and thus the object of the invention is difficult to achieve.
  • the upper limit of the temperature when the temperature exceeds 600 ° C., a part of the aluminum alloy may form a liquid phase and flow may occur, but when heated to a temperature at which flow occurs, deformation due to solidification occurs during cooling. Is not preferable.
  • the thermal conductivity of the composite of the present invention at room temperature (25 ° C.) is 150 W / mK or more.
  • the thermal conductivity is less than 150 W / mK, there is a problem that sufficient heat dissipation characteristics cannot be obtained when used as a heat dissipation component and the use thereof is limited.
  • the composite of the present invention has an average coefficient of thermal expansion of 9 ⁇ 10 ⁇ 6 / K or less when heated from room temperature (25 ° C.) to 150 ° C. If the average thermal expansion coefficient when heated from room temperature (25 ° C) to 150 ° C exceeds 9 ⁇ 10 -6 / K, the difference in thermal expansion coefficient from the ceramic substrate when used as a heat dissipation component such as a power module The ceramic substrate may be cracked or cracked due to excessive heating, heat bonding, or inability to heat cycle, and there is a problem that the application when used as a heat dissipation component that requires reliability is limited. .
  • the composite of the present invention has a density of about 3 g / cm 3 and is lighter than metals such as copper, and is effective for reducing the weight of parts when used as a heat dissipation part.
  • the composite of the present invention has a bending strength as high as 300 MPa or more, and has sufficient mechanical properties for use as a heat dissipation component.
  • the present invention is a heat dissipating component characterized by using the composite described above.
  • the heat dissipating component of the present invention has excellent heat conduction characteristics and sufficient mechanical characteristics, and is suitable for use as a heat sink or the like.
  • the heat dissipating component of the present invention is lightweight, with a density of about 3 g / cm 3 , and is suitable as a heat dissipating component used for a mobile device.
  • the heat dissipating component of the present invention has excellent heat conduction characteristics and a low average thermal expansion coefficient of 9 ⁇ 10 ⁇ 6 / K or less.
  • the heat dissipating component when used as a heat dissipating component such as a heat sink, the heat dissipating component is better than when using conventional copper or the like.
  • a difference in thermal expansion between the component and the ceramic substrate to be joined is small, and cracks and cracks of the ceramic substrate due to thermal cycles and the like generated during operation of the semiconductor element on the substrate can be suppressed.
  • This is suitable as a heat dissipating component used in a moving device such as an electric vehicle that requires high reliability.
  • Aluminum nitride and silicon nitride substrates have excellent insulation characteristics and excellent heat dissipation characteristics.
  • the aluminum nitride and silicon nitride substrates have extremely low reliability such as cracks and cracks due to the addition of thermal cycles. Obtainable.
  • the flat plate when the flat plate is mounted on the surface to which the ceramic substrate is not bonded via the heat dissipating grease, 90% or more of the surface is in close contact with the tightening torque of 2N or more. It has the advantage that heat generated during operation of the semiconductor element on the ceramic substrate can be quickly dissipated and a highly reliable module can be formed.
  • a predetermined amount of silica sol and / or alumina sol as a binder is added to and mixed with silicon carbide powder and molded into a desired shape.
  • the molding method dry press molding, wet press molding, extrusion molding, cast molding and the like can be used, and a shape-retaining binder may be added as necessary.
  • the silicon carbide powder one kind of powder may be used, but it is more preferable because a plurality of powders can be appropriately blended to obtain a high-density molded body.
  • the obtained molded body is calcined at a temperature of 700 to 1600 ° C.
  • silicon carbide based porous body in the atmosphere or an inert gas atmosphere such as nitrogen to produce a silicon carbide based porous body.
  • silicon carbide powder or a mixed powder of silicon powder and carbon powder can be produced by firing at a temperature of 1600 to 2200 ° C. in an inert gas atmosphere.
  • the obtained silicon carbide based porous material is processed into a predetermined shape and then heated in advance to prevent cracking due to thermal shock, and impregnated with a molten metal mainly composed of aluminum heated to a temperature higher than the melting point at high pressure.
  • a complex When adjusting the thickness of the metal layer on the surface of the composite, the thickness of the alloy layer on the surface of the composite obtained by impregnation is obtained by adding grooves or the like to the surface portion when processing the silicon carbide porous body. Can be adjusted. It can also be adjusted by laminating and impregnating a thin plate of Al alloy on the surface of the silicon carbide based porous material. In this case, not only a porous body but also silicon carbide powder can be used.
  • the thickness of the metal layer on the surface of the composite can also be adjusted by machining the metal layer on the surface of the composite. Furthermore, it is also produced by using a mold or the like, placing a preform slightly smaller than the void size of the mold in the void, and injecting molten metal into the void in the mold. be able to.
  • the impregnation method of the metal component is not particularly limited, and a high pressure casting method, a die casting method, or the like can be used.
  • Examples 1 to 8, Comparative Examples 1 to 4 Silicon carbide powder A (manufactured by Taihei Random Co., Ltd .: NG-150, average particle size: 100 ⁇ m), silicon carbide powder B (manufactured by Yakushima Electric: GC-1000F, average particle size: 10 ⁇ m) and silica sol (manufactured by Nissan Chemical Co., Ltd .: Snowtex) was blended in a composition having a mass ratio of 60:40:10, mixed for 1 hour with a stirring mixer, and then molded into a shape of 187 mm ⁇ 137 mm ⁇ 7 mm at a pressure of 10 MPa.
  • the said molded object was heated at 960 degreeC in air
  • the obtained silicon carbide based porous material was processed into a shape of 20 mm ⁇ ⁇ 7 mm, and the relative density was calculated from its dimensions and mass. As a result, it was 65%.
  • the obtained silicon carbide based porous material was processed to a desired thickness with a diamond processing jig, separated by a 0.8 mm-thick SUS plate in which a release agent was applied between 12 samples, and both ends A 12 mm-thick iron plate was placed on the plate and fixed with 10 mm ⁇ bolts and nuts to form one block.
  • the two blocks are preliminarily heated to a temperature of 650 ° C. in an electric furnace and placed in a pre-heated press mold having an inner dimension of 320 mm ⁇ 260 mm ⁇ 440 mm, and then the temperature is increased.
  • a molten aluminum alloy (ADC-12) heated to 810 ° C. was poured and pressed at a pressure of 500 MPa for 13 minutes or more to impregnate the silicon carbide based porous material with aluminum metal.
  • the obtained metal mass containing the composite was cooled to room temperature and then cut with a wet band saw to release the silicon carbide composite.
  • the vertical position in the thickness direction of the composite was detected with a laser with a laser thickness measuring machine (manufactured by Keyence Co., Ltd .: VT2-10SB), and the thickness at five points shown in FIG. 2 was measured.
  • the average thickness of the composite was calculated from the value, and the thickness variation was determined from the maximum value and the minimum value.
  • the target is irradiated with laser light by a laser three-dimensional shape measuring machine (Keyence Co., Ltd .: LK-GD500).
  • the amount of displacement was calculated by receiving diffusely reflected light from the object, and the amount of warpage of the main surface of the composite was measured.
  • complex was measured with the laser three-dimensional shape measuring machine. The results are shown in Table 1.
  • Example 9 to 11 The silicon carbide composite produced in Comparative Example 1 was set on a jig made of SUS-304 shown in FIG. 3, and a stress perpendicular to the main surface was loaded with an M10 screw, and then an electric furnace at a temperature of 500 ° C. After heating for 30 minutes, the load was released by cooling to room temperature.
  • Table 5 shows the amount of warpage of the obtained composite.
  • Table 5 shows the results of evaluating the obtained composites by the same method as in Examples 1 to 8. As shown in Table 5, the adhesion rate can be increased by forming a convex surface using a jig.

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Abstract

Le problème à résoudre dans le cadre de la présente invention est de proposer de façon non coûteuse un composant de dissipation thermique qui possède une conductivité thermique, une faible densité relative, un coefficient de diltation thermique proche de celui d'un substrat en céramique, et une capacité de déformation pour ainsi être capable d'être joint, conjointement avec une bonne adhésivité, à un composant de dissipation thermique ou analogues. La solution proposée consiste en un complexe de carbure de silicium qui est un complexe en forme de plaque formé en imprégnant un compact de carbure de silicium poreux avec un métal dont l'aluminium est le composant principal, la quantité de déformation par longueur de 10 cm d'une surface principale du complexe étant 250 μm ou moins, et la quantité de déformation d'un module électrique qui utilise le complexe en forme de plaque étant 250 μm ou moins, et un composant de dissipation thermique qui utilise ledit complexe.
PCT/JP2015/052880 2014-02-03 2015-02-02 Complexe de carbure de silicium, procédé de fabrication associé, et composant de dissipation thermique utilisant ledit complexe WO2015115649A1 (fr)

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US15/115,955 US20170162469A1 (en) 2014-02-03 2015-02-02 Silicon carbide complex, method for manufacturing same, and heat dissipation component using same
EP15743322.8A EP3104406B1 (fr) 2014-02-03 2015-02-02 Module de puissance
JP2015560068A JPWO2015115649A1 (ja) 2014-02-03 2015-02-02 炭化珪素質複合体及びその製造方法並びにそれを用いた放熱部品
CN201580007131.5A CN105981162A (zh) 2014-02-03 2015-02-02 碳化硅质复合体及其制造方法以及使用该复合体的散热零件

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WO2020158774A1 (fr) 2019-01-30 2020-08-06 デンカ株式会社 Élément de dissipation de chaleur et son procédé de fabrication
WO2020158775A1 (fr) 2019-01-30 2020-08-06 デンカ株式会社 Élément de dissipation de chaleur et son procédé de fabrication
WO2021200011A1 (fr) 2020-03-31 2021-10-07 デンカ株式会社 Carte montée sur élément et procédé de fabrication de carte montée sur élément

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JP6776953B2 (ja) * 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
CN108615717A (zh) * 2018-07-20 2018-10-02 井敏 一种金属化陶瓷基板、基板制作方法及基板与芯片焊接方法
CN116393677B (zh) * 2023-04-07 2023-11-03 哈尔滨工业大学 一种高通量近净成形制备金刚石/铝复合材料的方法

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JPH09157773A (ja) 1995-10-03 1997-06-17 Hitachi Metals Ltd 低熱膨張・高熱伝導性アルミニウム複合材料及びその製造方法
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WO2020158774A1 (fr) 2019-01-30 2020-08-06 デンカ株式会社 Élément de dissipation de chaleur et son procédé de fabrication
WO2020158775A1 (fr) 2019-01-30 2020-08-06 デンカ株式会社 Élément de dissipation de chaleur et son procédé de fabrication
CN113474885A (zh) * 2019-01-30 2021-10-01 电化株式会社 散热构件及其制造方法
CN113474885B (zh) * 2019-01-30 2022-07-01 电化株式会社 散热构件及其制造方法
WO2021200011A1 (fr) 2020-03-31 2021-10-07 デンカ株式会社 Carte montée sur élément et procédé de fabrication de carte montée sur élément

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EP3104406A1 (fr) 2016-12-14
EP3104406A4 (fr) 2017-09-13

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