WO2015113357A1 - 有机电致发光显示面板 - Google Patents

有机电致发光显示面板 Download PDF

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Publication number
WO2015113357A1
WO2015113357A1 PCT/CN2014/079845 CN2014079845W WO2015113357A1 WO 2015113357 A1 WO2015113357 A1 WO 2015113357A1 CN 2014079845 W CN2014079845 W CN 2014079845W WO 2015113357 A1 WO2015113357 A1 WO 2015113357A1
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Prior art keywords
sub
pixel
driving
display panel
red
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PCT/CN2014/079845
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English (en)
French (fr)
Inventor
王辉锋
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京东方科技集团股份有限公司
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Priority to US14/428,889 priority Critical patent/US9704927B2/en
Publication of WO2015113357A1 publication Critical patent/WO2015113357A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2003—Display of colours
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • the present invention relates to the field of organic electroluminescence display technology, and in particular to an organic electroluminescence display panel. Background technique
  • the organic electroluminescent display panel is an emerging flat panel display device with self-illumination, low cost, fast response, wide viewing angle, low power consumption, high brightness, wide operating temperature range, easy flexible display and simple preparation process. And so on, has broad application prospects.
  • Organic electroluminescent elements have a multilayer structure in which an organic electroluminescent material layer is interposed between an anode layer and a cathode layer to produce electroluminescence.
  • Organic electroluminescent elements can be classified into two types depending on the materials used.
  • One is a small molecule light-emitting diode based on dyes or pigments, called OLED (Organic Light-Emitting Diode) or OEL (Organic Electroluminescence).
  • Polymer light-emitting diodes based on polymers called PLED (Polymer Light-Emitting Diode) or LEP (Light-Emitting Polymer).
  • organic electroluminescence The material of the material layer can be divided into three main organic electroluminescent materials such as red (RED, R), green (Green, G) and blue (Blue, B).
  • each pixel unit of the organic electroluminescence display panel includes three sub-pixel units of RGB, and an organic electroluminescence element that emits one color corresponds to one sub-pixel unit.
  • the thin film deposition method of the organic electroluminescence display device mainly includes a vacuum evaporation process and a solution process.
  • the vacuum evaporation process is suitable for small organic molecules, and its film formation is uniform and the technology is relatively mature, but the equipment investment is large, the material utilization rate is low, and the Mask alignment accuracy of the large-size product is low.
  • the solution process includes spin coating, inkjet printing, nozzle coating, etc., suitable for polymer materials and Soluble small molecules, which are characterized by low equipment costs and outstanding advantages in large-scale, large-scale production.
  • Embodiments of the present invention provide an organic electroluminescence display panel for solving the problem that the resolution of the organic electroluminescence display device is low, and the mask alignment accuracy is low in the preparation process.
  • an organic electroluminescence display panel including:
  • each red photo sub-pixel unit comprises 4 red (R) sub-pixel elements
  • each green photo sub-pixel unit comprises 4 green (G) sub-pixel elements
  • each blue sub-pixel unit Including four blue (B) sub-pixel elements
  • each white sub-pixel unit includes four white (W) sub-pixel elements, and two adjacent sub-pixel units emit different light colors
  • the red sub-pixel element, the green sub-pixel element, the blue sub-pixel element, and the white sub-pixel element form a pixel region of the display panel.
  • each sub-pixel unit by setting each sub-pixel unit to include four sub-pixel elements emitting the same light color, the Mask alignment precision in the sub-pixel unit fabrication process can be improved. At the same time, since the area of each sub-pixel element is 1/4 of the area of each sub-pixel unit, the resolution of the organic electroluminescence display panel can be greatly increased by four times.
  • FIG. 1 is a view showing an arrangement of RGBW sub-pixel units of a conventional organic electroluminescence display panel
  • FIG. 2 is a schematic view showing the arrangement of RGBW sub-pixel units of the organic electroluminescence display panel in the embodiment of the present invention
  • 3 is a schematic view showing the arrangement of RGBW sub-pixel units of the organic electroluminescence display panel in the embodiment of the present invention.
  • Fig. 4 is a view showing the arrangement of RGBW sub-pixel units of the organic electroluminescence display panel in the embodiment of the present invention.
  • Figure 5 is a view showing the structure of an organic electroluminescent element formed over a thin film transistor in an embodiment of the present invention
  • FIG. 6 is a partial structural view showing an anode of an organic electroluminescent element in an embodiment of the present invention
  • FIG. 7 is a partial structural view showing a red photo sub-pixel element and a thin film transistor for driving the same in the embodiment of the present invention
  • Fig. 8 is a schematic view showing the distribution of a driving circuit of an organic electroluminescence display panel in an embodiment of the present invention. detailed description
  • the embodiment of the present invention provides an organic electroluminescence display panel by setting each sub-pixel unit.
  • the inclusion of a plurality of sub-pixel elements emitting the same light color can improve the Mask alignment accuracy in the sub-pixel unit fabrication process.
  • the adjacent two sub-pixel units emit different light colors, and the plurality of sub-pixel elements emitting different light colors form a pixel area of the display panel to realize full-color display.
  • the resolution of the organic electroluminescence display panel can be greatly improved.
  • a conventional full-color organic electroluminescent display panel generally includes a red (R) sub-pixel unit, a green (G) sub-pixel unit, and a blue (B) sub-pixel unit. Further, as shown in Fig. 1, in order to reduce the power consumption and increase the brightness of the display panel, an organic electroluminescence display panel including an RGB sub-pixel unit and a white (W) sub-pixel unit has appeared.
  • the organic electroluminescent display panel in the embodiment of the invention includes an RGBW sub-pixel unit, which can improve the brightness of the display panel and reduce the power consumption while improving the resolution.
  • the organic electroluminescent display panel in the embodiment of the present invention specifically includes:
  • the substrate 100 for example, a glass substrate having a high transmittance, a quartz substrate or an organic resin substrate can be selected;
  • each red photo sub-pixel unit 21 includes four red (R) sub-pixel elements 211
  • each green sub-pixel unit 22 includes four green (G) sub-pixel elements 221
  • Each of the blue sub-pixel units 23 includes four blue (B) sub-pixel elements 231, each of which includes four white (W) sub-pixel elements 241, and two adjacent sub-pixel units emit different color colors.
  • the red sub-pixel element 211, the green sub-pixel element 221, the blue sub-pixel element 231, and the white sub-pixel element 241 form a pixel area 20 of the display panel to achieve full-color display.
  • each of the pixel regions 20 may include only one red (R) sub-pixel element 211, one green (G) sub-pixel element 221, one blue (B) sub-pixel element 231, and one white light ( W) sub-pixel element 241, can achieve full color, low power, high resolution and high Brightness display.
  • R red
  • G green
  • B blue
  • W white light
  • the pixel region of the organic electroluminescent display panel includes RGBW sub-pixel elements, which can realize full color, high brightness and low power consumption display.
  • RGBW sub-pixel elements which can realize full color, high brightness and low power consumption display.
  • the area of each sub-pixel element is 1/4 of the area of each sub-pixel unit, and the area of the sub-pixel units 21, 22, and 23 is
  • the area of the pixel region 20 in the embodiment of the present invention is 1/4 of the area of the pixel region 10 of the conventional organic electroluminescence display panel.
  • the resolution of the organic electroluminescent display panel can be greatly increased by 4 times.
  • the sub-pixel element of each sub-pixel unit may be an organic light emitting diode element of a small molecule type or an organic light emitting diode element of a polymer form.
  • the shape may be a regular pattern, such as a rectangle (as shown in FIG. 2), a trapezoid (as shown in FIG. 3) or a diamond (as shown in FIG. 4), or may be irregular. Graphics.
  • each sub-pixel unit may be identical or not identical, such as any combination of at least two of a rectangle, a trapezoid and a diamond.
  • organic electroluminescent display devices are classified into passive matrix driving and active matrix driving depending on the driving method. Since the active matrix driven organic electroluminescence display device adds a thin film transistor to the panel, each thin film transistor independently drives one pixel unit, so that the pixel unit can emit light in one frame time, and the required driving current is small. Low power consumption and long life can meet the needs of high-resolution large-size display. Therefore, existing organic electroluminescent display devices are usually driven by active matrix.
  • the active matrix driven organic electroluminescent display panel specifically includes:
  • the substrate 100 is formed with a horizontally and vertically intersecting retaining wall 8 for defining a region where the sub-pixel unit is located.
  • a plurality of red sub-pixel units 21, a plurality of green sub-pixel units 22, a plurality of blue sub-pixel units 23, and a plurality of white sub-pixel units 24 are formed in regions of the corresponding sub-pixel units on the substrate 100.
  • Each of the red sub-pixel units 21 includes four red sub-pixel elements 211
  • each of the green sub-pixel units 22 includes four green sub-pixel elements 221
  • each of the blue sub-pixel units 23 includes four blue sub-pixel elements 231 .
  • Each of the white sub-pixel units 24 includes four white sub-pixel elements 241, and two adjacent sub-pixel units emit different light colors.
  • an adjacent one of the red (R) sub-pixel elements 211, one green (G) sub-pixel element 221, one blue (B) sub-pixel element 231 and one white (W) sub-pixel element 241 form a display panel a pixel region 20; and a plurality of thin film transistors 1 electrically connected to the sub-pixel elements for driving the sub-pixel elements to emit light.
  • the source electrode of the thin film transistor 1 is electrically connected to the first electrode 6 (usually an anode) of the sub-pixel element.
  • the forming process includes:
  • Step a a thin film transistor 1 is formed on the substrate 100.
  • the steps of forming the gate electrode 2, the gate insulating layer 101, the active layer pattern 5, the source electrode 3, and the drain electrode 4 are included.
  • the specific process is as follows: First, a gate metal layer is formed on the substrate 100, and a patterning process is performed on the gate metal layer (including photoresist coating, exposure and development, etching, and photoresist). The process of stripping and the like, the patterning process in the following includes the above process unless otherwise stated.) The pattern of the gate electrode 2 is formed. Thereafter, a gate insulating layer 101 is formed over the gate electrode 2. Then, a semiconductor layer is formed over the gate insulating layer 101, and the semiconductor layer is patterned to form the active layer pattern 5. Finally, a source/drain metal layer is formed over the active layer pattern 5, and a pattern of the source and drain metal layers is formed by patterning the source and drain metal layers. Before the source/drain metal layer is formed over the active layer pattern 5, an etch stop layer pattern 9 may be formed on the active layer pattern 5 for preventing the patterning process of forming the source electrode 3 and the drain electrode 4. The active layer pattern 5 is affected.
  • the thin film transistor 1 in this embodiment is not limited to the bottom gate type, and may be a top gate type or a coplanar type.
  • Step b a passivation layer 102 and a planarization layer 103 are sequentially formed over the thin film transistor 1, a passivation layer 102 and a planarization layer 103 are patterned to form via holes, and a plurality of grooves are formed on the surface of the planarization layer 103.
  • the flat layer 103 for example, it can be formed by a film forming process such as plasma enhanced chemical vapor deposition (PECVD), spin coating, sputtering, ink jet printing or the like.
  • PECVD plasma enhanced chemical vapor deposition
  • a photoresist is coated on the flat layer 103, and the photoresist is exposed by a halftone or gray tone mask to form a photoresist completely reserved region, a photoresist portion remaining region, and a photoresist non-reserved region.
  • the photoresist partially reserved area corresponds to at least a region where the plurality of grooves are located, and the photoresist non-retained area corresponds at least to the area where the via hole is located, and the photoresist completely reserved area corresponds to other areas.
  • the flat layer 103 and the passivation layer 102 of the photoresist non-retained region are etched away by a first etching process to form desired via holes. Thereafter, the photoresist in the remaining portion of the photoresist is stripped, and a portion of the planar layer 103 of the remaining portion of the photoresist is etched away by a:::::::: etch process to form a plurality of grooves. Finally, the remaining photoresist is stripped. Wherein, as shown in FIG. 6, the plurality of grooves correspond to a region where the first electrode 6 is located.
  • the material of the flat layer 103 can be, for example, an organic resin or an inorganic material having good film forming property, high insulating property, and surface energy close to the material of the first electrode 6. Further material, the planarization layer 103 in the organic electroluminescent light emitting element cleaning process before the deposition process, resistant to ultraviolet (UV), plasma (the Plasma), and other common processing 03 of the cleaning process.
  • the material of the flat layer 103 for example, SiO 2 , ceramic, silicone resin, polyimide, or the like can be selected.
  • Step c forming an organic electroluminescent element on the flat layer 103.
  • the organic electroluminescent element includes a first electrode 6 (generally referred to as an anode), a second electrode 7 (generally referred to as a cathode), and a sub-pixel element 211 sandwiched between the first electrode 6 and the second electrode 7.
  • the sub-pixel elements can be classified into two types, a top emission and a bottom emission, wherein, for the bottom emission sub-pixel element, an anode 6 having transparency and a cathode 7 having reflectivity are provided; and for the top emission sub-pixel element, the setting is transparent
  • a transparent or translucent material such as ITO, IZO, Ag, NiO, Al, or graphene may be selected as the anode 6 having transparency.
  • This step specifically includes:
  • the first electrode 6 is formed in the groove of the flat layer 103.
  • a conductive layer can be formed by a film formation method such as evaporation, sputtering, coating, spin coating, or the like, and then a patterning process is performed on the conductive layer to form a pattern of the first electrode 6.
  • the first electrode 6 corresponds to the position of the red sub-pixel element 211, and is electrically connected to the source electrode of the thin film transistor 1 through the via hole formed in the step b, thereby being independently controlled by the thin film transistor 1. Further, the first electrode 6 corresponding to the different sub-pixel elements (including adjacent sub-pixel elements emitting the same light color, and adjacent sub-pixel elements emitting different light colors) are insulated from each other.
  • the gap width between the four first electrodes 6 corresponding to each sub-pixel unit is set to be, for example, 100 nm to 500 um, preferably 5 um to 100 um.
  • a laterally intersecting retaining wall 8 is formed on the flat layer 103 for defining an area in which the sub-pixel unit is located.
  • each sub-pixel unit region includes four sub-pixel elements emitting the same light color, the area is increased, so that the layer of the organic electroluminescent material that subsequently forms each sub-pixel unit can be spread very flat, thereby The risk of vulnerabilities caused by uneven film formation at the edge of the retaining wall 8 is avoided.
  • the area where the sub-pixel element is located with respect to the horizontally and vertically intersecting retaining wall 8 avoids the risk of electric leakage caused by uneven film formation at the edge of the retaining wall 8.
  • each sub-pixel unit region includes four sub-pixel elements that emit the same light color, the film formation environment of the ink droplets is uniform, and the film formation uniformity is also greatly improved. If the horizontally and vertically intersecting retaining wall 8 defines the area where the sub-pixel elements are located, the reduction of the area will cause the coffee ring phenomenon to be inevitably present at the edge of each sub-pixel element, which seriously affects the quality of the film formation.
  • the typical organic electroluminescent material layer includes a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron blocking layer, and an electron transport layer. One or more layers such as an electron injecting layer.
  • the organic electroluminescent material layer is patterned to form a red sub-pixel element 211 which is located in the corresponding sub-pixel unit area.
  • the cathode 7 may be a plate-shaped electrode covering the entire substrate 100. At this time, the light emission of the sub-pixel element can be controlled by simply changing the voltage applied to the anode 6, thereby simplifying the manufacturing process.
  • the material of the cathode 7 may be, for example, Al, Mg, Ca, Ba, Na, Li, K, Ag, or the like. Metal or a combination thereof.
  • the preparation of all red photo sub-pixel units 21 can be completed simultaneously by the above steps a-c.
  • the green photo sub-pixel unit, the blue sub-pixel unit, and the white sub-pixel unit can also be separately prepared by dividing the above steps three times.
  • the Mask in the preparation process of the red photo sub-pixel unit, the green photo sub-pixel unit, the blue sub-pixel unit, and the white sub-pixel unit can be simultaneously used, and the red photo sub-pixel unit, the green photo sub-pixel unit, the blue sub-pixel unit, and the white are completed at one time. Preparation of photonic pixel units.
  • the organic electroluminescent display device In order to avoid the damage of the organic electroluminescent display device layer from moisture and oxygen, the organic electroluminescent display device needs to be packaged.
  • the commonly used packaging methods are glass package (Frit), dam fill package (Dam & Fill), film package ( Film), metal package, laminate package (Laminator) and other packaging methods.
  • an active matrix driven organic electroluminescent display panel it further includes a gate driving circuit (not shown), a source driving circuit (not shown), and a plurality of row-distributed gates. a driving line and a plurality of column-distributed source driving lines, wherein the gate driving circuit is electrically connected to the gate driving line, and is used for inputting a driving signal to the » driving line, and the source driving circuit is electrically connected to the source driving line, The source drive signal is input to the source drive line.
  • the » drive line includes:
  • the red gate driving line GR is electrically connected to the gate electrode of the thin film transistor driving the red sub-pixel element 211, and each row of the red gate driving line GR is used to drive a plurality of red photo sub-pixel elements 211 distributed in the same direction; the green gate driving line GG, The gate electrode of the thin film transistor driving the green sub-pixel element 221 is electrically connected, and each row of the green gate driving line GG is used to drive a plurality of green photo sub-pixel elements 221 distributed in the same direction; the blue gate driving line GB, and the driving blue sub-pixel element The gate electrode of the thin film transistor of 231 is electrically connected, and each row of the blue gate driving line GB is used to drive a plurality of blue sub-pixel elements 231 distributed in the same direction; the white gate driving line GW and the gate of the thin film transistor driving the white sub-pixel element 241 The electrodes are electrically connected, and each row of white gate driving lines GW is used to drive a plurality of white light sub-pixel elements 241 distributed in
  • the source drive line includes:
  • the red source driving line SR is electrically connected to the source electrode of the thin film transistor driving the red sub-pixel element 211, and each column of the red source driving line SR is used to drive the plurality of red photo sub-pixel elements 211 distributed in the same column; the green source driving line SG, and Source electrode electrical properties of a thin film transistor driving green photonic pixel element 221 Connected, each column of the green source driving line SG is used to drive a plurality of green photo sub-pixel elements 221 distributed in the same column; the blue source driving line SB is electrically connected to the source electrode of the thin film transistor that drives the blue sub-pixel element 231, and each column of blue source driving The line SB is used to drive the plurality of blue sub-pixel elements 231 distributed in the same column; the white source driving line SW is electrically connected to the source electrode of the thin film transistor that drives the white sub-pixel element 241, and each column of the white source driving line SW is used to drive the same column. A plurality of white light sub-pixel elements 241 are distributed.
  • the gate driving circuits corresponding to the sub-pixel elements emitting the same light color in two adjacent rows are located on the left and right sides of the substrate, and the source driving circuits corresponding to the sub-pixel elements emitting the same light color in the adjacent two columns are located on the upper and lower sides of the substrate.

Abstract

一种有机电致发光显示面板，其包括多个RGBW子像素单元，每一个R子像素单元（21）包括4个R子像素元件（211），每一个G子像素单元（22）包括4个G子像素元件（221），每一个B子像素单元（23）包括4个B子像素元件（231），每一个W子像素单元（24）包括4个W子像素元件（241），且相邻两个子像素单元发出不同光色。R子像素元件（211）、G子像素元件（221）、B子像素元件（231）和W子像素元件（241）形成显示面板的像素区域（20）。通过设置每个子像素单元包括4个发出相同光色的子像素元件，可以提高制备工艺中Mask的对位精度。同时，由于每个子像素元件的面积为每个子像素单元面积的1/4，使得有机电致发光显示面板的分辨率可以大幅提高至原来的4倍。

Description

有机电致发光显示面梹 相关申请的交叉引用
本申请主张在 2014 年 1 月 29 日在中国提交的中国专利申请号 No. 201410043709.X的优先权， 其全部内容通过引用包含于此。 技术领域
本发明涉及有机电致发光显示技术领域， 特别是涉及- 种有机电致发光 显示面板。 背景技术
有机电致发光显示面板是- 种新兴的平板显示器件， 拥有自发光、 低成 本、 响应速度快、 广视角、 功耗低、 高亮度、 工作温度适应范围广、 易于实 现柔性显示且制备工艺简单等优点， 具有广阔的应用前景。
传统的有机电致发光元件具有多层结构， 主要是在阳极层和阴极层之间 置入一有机电致发光材料层， 以产生电致发光。 有机电致发光元件依据所使 用的材料可分为两种， 一种是以染料或颜料为主的小分子发光二极管， 称为 OLED ( Organic Light-Emitting Diode )或 OEL ( Organic Electroluminescence )， 另一种是以高分子为主的聚合物发光二极管， 称为 PLED ( Polymer Light-Emitting Diode) 或 LEP ( Light-Emitting Polymer) 此外， 依据有机电 致发光元件所发出的光的颜色， 有机电致发光材料层的材料可以分为红色 (RED, R)、 绿色 （Green, G) 和蓝色 （Blue, B ) 等三种主要的有机电致 发光材料。 为了实现全色显示， 有机电致发光显示面板的每个像素单元包括 RGB三个子像素单元， 发出一种颜色的有机电致发光元件对应一个子像素单 元。
有机电致发光显示器件的薄膜沉积方法主要有真空蒸镀制程和溶液制程 两种。 其中， 真空蒸镀制程适用于有机小分子， 其成膜均匀好、 技术相对成 熟， 但是设备投资大、 材料利用率低、 大尺寸产品的 Mask对位精度低。 另 外， 溶液制程包括旋涂、 喷墨打印、 喷嘴涂覆法等， 适用于聚合物材料和可 溶性小分子， 其特点是设备成本低， 在大规模、 大尺寸生产上优势突出。 对于真空蒸镀制程来说， 虽然在中小尺寸的有机电致发光显示器件的生 产中已经实现量产， 但是其分辨率尚不能和液晶显示器 （LCD) 相比， 而在 大尺寸的有机电致发光显示器件的生产中， 由于在子像素单元的制备工艺中 Mask对位精度低， 因此量产困难； 对于溶液制程， 虽然大小尺寸的有机电致 发光显示器件的样机不断出现， 但均尚未量产， 而且其分辨率由于受成膜设 备精度限制， 分辨率不高。
因此， 如何制备高分辨率的 OLED器件是困扰着 OLED产业人的一个难 题。 目前， 虽然有很多不同的像素设计， 如我们熟知的 square、 side by side, pentile, stripe等像素排列方式， 但是， 这些像素设计仅仅局限于像素本身的 排列方式变化， 其实际分辨率并没有大的提高。 同时， 相对于高精细图案化 的薄膜晶体管相关成膜技术， 制备有机电致发光显示器件的真空蒸镀制程和 溶液制程受工艺及设备的限制， 不易实现高精度的图案。 发明内容
本发明实施例提供了一种有机电致发光显示面板， 用以解决有机电致发 光显示器件的分辨率较低， 且制备工艺中 Mask对位精度低的问题。
为解决上述技术问题， 根据本发明的实施例， 提供一种有机电致发光显 示面板， 包括：
基板;
多个子像素单元，其形成在所述基板上,包括多个红光（R)子像素单元、 多个绿光 （G) 子像素单元、 多个蓝光 （B) 子像素单元和多个白光 （W) 子 像素单元， 其中， 每一个红光子像素单元包括 4个红光（R)子像素元件， 每 一个绿光子像素单元包括 4个绿光 （G) 子像素元件， 每一个蓝光子像素单 元包括 4个蓝光（B )子像素元件，每一个白光子像素单元包括 4个白光（W) 子像素元件， 且相邻两个子像素单元发出不同光色；
其中， 所述红光子像素元件、 绿光子像素元件、 蓝光子像素元件和白光 子像素元件形成显示面板的像素区域。
本发明的上述技术方案的有益效果如下： 上述技术方案中， 通过设置每个子像素单元包括 4个发出相同光色的子 像素元件， 可以提高子像素单元制备工艺中的 Mask对位精度。 同时， 由于 每个子像素元件的面积为每个子像素单元面积的 1/4，使得有机电致发光显示 面板的分辨率可以大幅提高至原来的 4倍。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案， 下面将对实 施例或现有技术描述中所需要使用的附图作简单地介绍， 显而易见地， 下面 描述中的附图仅仅是本发明的一些实施例， 对于本领域普通技术人员来讲， 在不付出创造性劳动性的前提下， 还可以根据这些附图获得其他的附图。
图 1为表示传统的有机电致发光显示面板的 RGBW子像素单元的排列示 意图；
图 2为表示本发明实施例中有机电致发光显示面板的 RGBW子像素单元 的排列示意图；
图 3为表示本发明实施例中有机电致发光显示面板的 RGBW子像素单元 的排列示意图；
图 4为表示本发明实施例中有机电致发光显示面板的 RGBW子像素单元 的排列示意图。
图 5为表示本发明实施例中形成在薄膜晶体管上方的有机电致发光元件 的结构示意图；
图 6为表示本发明实施例中有机电致发光元件阳极的局部结构示意图； 图 7为表示本发明实施例中一个红光子像素元件与驱动其发光的薄膜晶 体管的局部结构示意图；
图 8为表示本发明实施例中有机电致发光显示面板驱动电路的分布示意 图。 具体实施方式
下面将结合附图和实施例，对本发明的具体实施方式作进一步详细描述。 以下实施例用于说明本发明， 但不用来限制本发明的范围。 为解决有机电致发光显示面板分辨率低，且子像素单元制备工艺中 Mask 对位精度低的技术问题， 本发明实施例提供了一种有机电致发光显示面板， 其通过设置每个子像素单元包括多个发出相同光色的子像素元件， 可以提高 子像素单元制备工艺中的 Mask对位精度。 并 11.， 相邻两个子像素单元发出 不同光色， 发出不同光色的多个子像素元件形成显示面板的像素区域， 实现 全色显示。 同时， 由于每个子像素元件的面积小于每个子像素单元的面积， 使得有机电致发光显示面板的分辨率可以得到大幅提高。
传统的全色有机电致发光显示面板， 其- 般包括红光 （R) 子像素单元、 绿光 （G) 子像素单元、 蓝光 （B) 子像素单元。 进而， 如图 1所示， 为了降 低功耗， 提高显示面板的亮度， 出现了包括 RGB子像素单元和白光（W)子 像素单元的有机电致发光显示面板。
本发明实施例中的有机电致发光显示面板即包括 RGBW子像素单元，在 提高分辨率的同时， 还可以提高显示面板的亮度， 降低功耗。
结合图 2、 图 5和图 7所示， 本发明实施例中的有机电致发光显示面板 具体包括：
基板 100， 所述基板 100例如可以选择高透过率的玻璃基板、 石英基板 或有机树脂基板；
多个子像素单元， 其形成在基板 100上， 包括多个红光（R)子像素单元 21、 多个绿光 （G) 子像素单元 22、 多个蓝光 （B) 子像素单元 23和多个白 光（W)子像素单元 24， 其中， 每一个红光子像素单元 21包括 4个红光（R) 子像素元件 211， 每一个绿光子像素单元 22包括 4个绿光 （G) 子像素元件 221 , 每一个蓝光子像素单元 23包括 4个蓝光 （B )子像素元件 231， 每一个 白光子像素单元 24包括 4个白光 （W) 子像素元件 241， 且相邻两个子像素 单元发出不同光色。 其中， 红光子像素元件 211、 绿光子像素元件 221、 蓝光 子像素元件 231和白光子像素元件 241形成显示面板的像素区域 20， 实现全 色显示。
在本实施例中， 每一个像素区域 20内可以只包括一个红光 （R) 子像素 元件 211、 一个绿光 （G) 子像素元件 221、 一个蓝光 （B ) 子像素元件 231 和一个白光（W)子像素元件 241， 就可以实现全色、 低功耗、 高分辨率和高 亮度显示。
本发明实施例中，有机电致发光显示面板的像素区域包括 RGBW子像素 元件， 能够实现全色、 高亮度和低功耗显示。 通过设置每个子像素单元包括 4个发出相同光色子像素元件，可以提高子像素单元制备工艺中的 Mask对位 精度。 同时， 结合图 1和图 2所示， 本发明实施例中， Εί:1于每个子像素元件 的面积为每个子像素单元面积的 1/4， 在子像素单元 21、 22和 23的面积与传 统有机电致发光显示面板的子像素单元 11、 12和 13的面积相同时， 本发明 实施例中的像素区域 20的面积是传统有机电致发光显示面板的像素区域 10 的面积的 1/4， 使得有机电致发光显示面板的分辨率可以大幅提高至原来的 4 倍。
在本实施例中， 作为每个子像素单元的的子像素元件， 可以为小分子形 式的有机发光二极管元件， 也可以为高分子形式的有机发光二极管元件。
作为每个子像素单元的子像素元件，其形状可以为规则图形，如矩形（如 图 2所示）、 梯形 （如图 3所示） 或菱形 (如图 4所示）， 也可以为不规则图 形。
进一歩地， 每个子像素单元的子像素元件的形状可以完全相同， 也可以 不完全相同， 如矩形、 梯形和菱形中至少两种的任意组合。
现有技术中， 根据驱动方式的不同， 有机电致发光显示装置分为无源矩 阵驱动和有源矩阵驱动两种。 由于有源矩阵驱动的有机电致发光显示装置在 面板上加入薄膜晶体管， 每个薄膜晶体管独立驱动一个像素单元， 从而使像 素单元在一帧时间内都能够发光， 且其所需的驱动电流小， 功耗低， 寿命更 长， 可以满足高分辨率的大尺寸显示需要， 因此， 现有的有机电致发光显示 装置通常采用有源矩阵驱动。
下面将具体说明有源矩阵驱动的有机电致发光显示面板的结构及其制备 过程。
结合图 2、 图 5-图 7所示， 有源矩阵驱动的有机电致发光显示面板具体 包括：
基板 100， 基板 100上形成有横纵交叉的挡墙 8， 用于限定子像素单元所 在的区域。 多个红光子像素单元 21、 多个绿光子像素单元 22、 多个蓝光子像素单元 23和多个白光子像素单元 24，形成在基板 100上对应的子像素单元的区域中。 其中， 每一个红光子像素单元 21包括 4个红光子像素元件 211 , 每一个绿光 子像素单元 22包括 4个绿光子像素元件 221， 每一个蓝光子像素单元 23包 括 4个蓝光子像素元件 231， 每- 个白光子像素单元 24包括 4个白光子像素 元件 241， 且相邻两个子像素单元发出不同光色。其中， 相邻的一个红光（R) 子像素元件 211、 一个绿光 （G) 子像素元件 221、 一个蓝光 （B ) 子像素元 件 231和一个白光 （W) 子像素元件 241形成显示面板的像素区域 20; 以及 多个薄膜晶体管 1 , 与子像素元件一一电性连接， 用于驱动子像素元件 发光。 具体的， 薄膜晶体管 1 的源电极与子像素元件的第-一电极 6 (通常为 阳极） 电性连接。
下面， 结合图 5-图 7所示， 以红光 （R) 子像素元件 211与对应的薄膜 晶体管 1 的形成过程为例， 来具体说明有源矩阵驱动的有机电致发光显示面 板的形成过程。 所述形成过程包括：
歩骤 a， 在基板 100上形成薄膜晶体管 1。
具体包括形成栅电极 2、 栅绝缘层 101、 有源层图案 5、 源电极 3和漏电 极 4的步骤。
对于底栅型薄膜晶体管 1， 其具体过程为： 首先在基板 100上形成栅金 属层， 对栅金属层进行构图工艺 （包括光刻胶的涂覆、 曝光和显影、 刻蚀以 及光刻胶的剥离等工艺过程， 以下内容中的构图工艺， 除特殊声明外均包括 上述工艺过程） 形成栅电极 2的图案。 之后， 在栅电极 2的上方形成栅绝缘 层 101。 然后， 在栅绝缘层 101 的上方形成半导体层， 对半导体层进行构图 工艺形成有源层图案 5。 最后， 在有源层图案 5 的上方形成源漏金属层， 对 源漏金属层进行构图工艺形成源电极 3和漏电极 4的图案。 其中， 在有源层 图案 5的上方形成源漏金属层之前， 还可以在有源层图案 5的上方先形成刻 蚀阻挡层图案 9， 用于防止形成源电极 3和漏电极 4的构图工艺对有源层图 案 5产生影响。
此外， 本实施例中的薄膜晶体管 1并不局限于底栅型， 也可以为顶栅型 或共面型。 步骤 b， 在薄膜晶体管 1的上方依次形成钝化层 102和平坦层 103 , 对钝 化层 102和平坦层 103进行构图工艺， 形成过孔， 并在平坦层 103的表面形 成多个凹槽。
作为平坦层 103，例如可以通过等离子体增强化学气相沉积法（PECVD)、 旋涂、 溅射、 喷墨打印等成膜工艺形成。 在平坦层 103上涂覆光刻胶， 利用 半色调或灰色调掩膜板对光刻胶进行曝光， 形成光刻胶完全保留区域、 光刻 胶部分保留区域和光刻胶不保留区域。 其中， 光刻胶部分保留区域至少对应 多个凹槽所在的区域， 光刻胶不保留区域至少对应过孔所在的区域， 光刻胶 完全保留区域对应其他区域。 通过第一次刻蚀工艺刻蚀掉光刻胶不保留区域 的平坦层 103和钝化层 102， 形成所需的过孔。 之后， 剥离光刻胶部分保留 区域的光刻胶， 通过第::：::：次刻蚀工艺刻蚀掉光刻胶部分保留区域的部分平坦 层 103， 形成多个凹槽。 最后， 剥离剩余的光刻胶。 其中， 如图 6所示， 所 述多个凹槽对应第一电极 6所在的区域。 通过上述步骤可以使得后续形成第 一电极 6后， 显示面板的表面仍然平坦， 方便形成子像素元件 211 (由有机 电致发光材料层形成）。
其中， 平坦层 103的材料例如可以选择成膜性好、 绝缘性高、 表面能和 第一电极 6材料接近的有机树脂或者无机材料。 另外， 平坦层 103的材料在 有机电致发光元件成膜工艺前的清洗工艺中， 能抵抗紫外线 （UV)、 等离子 体 ( Plasma ) , 03等常见清洗工艺的处理。 在一个示例中， 作为平坦层 103 的材料例如可以选择 Si02、 陶瓷、 有机硅树脂、 聚酰亚胺等。
歩骤 c， 在平坦层 103上形成有机电致发光元件。
其中, 有机电致发光元件包括第一电极 6 (通常称为阳极）、 第二电极 7 (通常称为阴极） 以及夹层设置在第一电极 6和第二电极 7之间的子像素元 件 211。
子像素元件可以分为顶发射和底发射两种， 其中， 对于底发射的子像素 元件， 设置具有透明性的阳极 6和具有反射性的阴极 7; 对于顶发射的子像 素元件， 设置具有透明性的阴极 7和具有反射性的阳极 6。 其中， 作为具有 透明性的阳极 6可以选择 ITO、 IZO、 Ag、 NiO、 Al、 石墨烯等透明或半透明 的材料。 该步骤具体包括：
首先， 在平坦层 103 的凹槽内形成第-一电极 6。 具体地， 例如可以通过 蒸镀、 溅射、 涂覆、 旋涂等成膜方式形成导电层， 然后对导电层进行构图工 艺形成第一电极 6的图案。
其中， 第一电极 6与红光子像素元件 211的位置对应， 并通过歩骤 b中 形成的过孔与薄膜晶体管 1的源电极电性连接， 从而受薄膜晶体管 1的独立 控制。 并且， 不同子像素元件 （包括发出相同光色的相邻子像素元件， 以及 发出不同光色的相邻子像素元件） 对应的第-一电极 6彼此绝缘。
为了实现第一电极 6之间彼此的完全绝缘， 设置每个子像素单元对应的 4个第一电极 6之间的缝隙宽度例如为 100 nm-500 um，优选为 5 um-100 um。
之后， 在平坦层 103上形成横纵交叉的挡墙 8， 用于限定子像素单元所 在的区域。
对于真空蒸镀制程， 由于每个子像素单元区域包括 4个发出相同光色的 子像素元件， 面积的增大， 使得后续形成每个子像素单元的有机电致发光材 料层可以铺展的非常平整， 从而避免了挡墙 8的边缘成膜不均匀带来的漏洞 危险。 此外， 相对于横纵交叉的挡墙 8限定子像素元件所在的区域， 避免了 挡墙 8边缘成膜不均匀带来的漏电危险。
同样， 对于溶液制程， 由于每个子像素单元区域包括 4个发出相同光色 的子像素元件， 墨滴的成膜环境一致， 其成膜均匀性也将大幅度提高。 如果 横纵交叉的挡墙 8限定子像素元件所在的区域， 面积的减小， 会使得每个子 像素元件的边缘将不可避免的存在咖啡环现象， 严重影响成膜的质量。
之后， 在第一电极 6上形成有机电致发光材料层， 典型的有机电致发光 材料层包括空穴注入层、 空穴传输层、 发光层、 空穴阻挡层、 电子阻挡层、 电子传输层、 电子注入层等其中的一层或多层。 对有机电致发光材料层进行 构图工艺， 形成红光子像素元件 211， 其位于对应的子像素单元区域内。
之后， 在红光子像素元件 211上形成第二电极 7， 通常称为阴极。
其中， 阴极 7可以为覆盖整个基板 100的板状电极， 此时， 只需改变施 加到阳极 6的电压即可控制子像素元件的发光， 从而简化了制备工艺。
作为阴极 7的材料， 例如可以为 Al、 Mg、 Ca、 Ba、 Na、 Li、 K、 Ag等 金属或它们的组合。
通过上述歩骤 a-c可同时完成所有红光子像素单元 21的制备。
对于绿光子像素单元、 蓝光子像素单元和白光子像素单元同样可以通过 上述步骤分三次来分别制备。
当然， 也可以同时利用上述红光子像素单元、 绿光子像素单元、 蓝光子 像素单元和白光子像素单元制备工艺中的 Mask， 一次完成红光子像素单元、 绿光子像素单元、 蓝光子像素单元和白光子像素单元的制备。
为了避免有机电致发光显示器件层受潮气和氧的破坏， 最后还需对有机 电致发光显示器件进行封装， 常用封装的方式为玻璃封装 ( Frit ) , 坝填充封 装 （Dam&Fill)、 膜封装 ( Film ) , 金属封装 ( metal ) , 层压封装 （Laminator) 等封装方式。
如图 8所示， 对于有源矩阵驱动的有机电致发光显示面板， 其还包括栅 驱动电路 （图中未示出）、 源驱动电路 （图中未示出）、 多个行分布的栅驱动 线和多个列分布的源驱动线， 所述栅驱动电路与栅驱动线电性连接， 用于向 »驱动线输入 »驱动信号， 所述源驱动电路与源驱动线电性连接， 用于向源 驱动线输入源驱动信号。
其中， 所述 »驱动线包括：
红栅驱动线 GR,与驱动红光子像素元件 211的薄膜晶体管的栅电极电性 连接， 每行红栅驱动线 GR用于驱动同行分布的多个红光子像素元件 211 ; 绿栅驱动线 GG，与驱动绿光子像素元件 221的薄膜晶体管的栅电极电性 连接， 每行绿栅驱动线 GG用于驱动同行分布的多个绿光子像素元件 221 ; 蓝栅驱动线 GB,与驱动蓝光子像素元件 231的薄膜晶体管的栅电极电性 连接， 每行蓝栅驱动线 GB用于驱动同行分布的多个蓝光子像素元件 231 ; 白栅驱动线 GW， 与驱动白光子像素元件 241 的薄膜晶体管的栅电极电 性连接，每行白栅驱动线 GW用于驱动同行分布的多个白光子像素元件 241。
所述源驱动线包括：
红源驱动线 SR，与驱动红光子像素元件 211的薄膜晶体管的源电极电性 连接， 每列红源驱动线 SR用于驱动同列分布的多个红光子像素元件 211 ; 绿源驱动线 SG,与驱动绿光子像素元件 221的薄膜晶体管的源电极电性 连接， 每列绿源驱动线 SG用于驱动同列分布的多个绿光子像素元件 221 ; 蓝源驱动线 SB，与驱动蓝光子像素元件 231的薄膜晶体管的源电极电性 连接， 每列蓝源驱动线 SB用于驱动同列分布的多个蓝光子像素元件 231 ; 白源驱动线 SW， 与驱动白光子像素元件 241 的薄膜晶体管的源电极电 性连接， 每列白源驱动线 SW用于驱动同列分布的多个白光子像素元件 241。
其中， 相邻两行发出相同光色的子像素元件对应的栅驱动电路位于基板 的左右两侧， 相邻两列发出相同光色的子像素元件对应的源驱动电路位于基 板的上下两侧。
需要说明的是， 引入左、 右、 上、 下， 只是为了便于描述， 并不是一种 限定。
以上所述仅是本发明的优选实施方式， 应当指出， 对于本技术领域的普 通技术人员来说， 在不脱离本发明原理的前提下， 还可以做出若干改进和润 饰， 这些改进和润饰也应视本发明的保护范围。

Claims

禾 tl
1. 一种有机电致发光显示面板， 包括：
基板；
多个子像素单元， 形成在所述基板上， 包括多个红光子像素单元、 多个 绿光子像素单元、 多个蓝光子像素单元和多个白光子像素单元， 其中， 每一 个红光子像素单元包括 4个红光子像素元件， 每一个绿光子像素单元包括 4 个绿光子像素元件， 每一个蓝光子像素单元包括 4个蓝光子像素元件， 每一 个白光子像素单元包括 4个白光子像素元件， 且相邻两个子像素单元发出不 同光色；
其中， 所述红光子像素元件、 绿光子像素元件、 蓝光子像素元件和白光 子像素元件形成显示面板的像素区域。
2. 根据权利要求 1所述的有机电致发光显示面板， 其中， 每一个像素区 域内包括 个红光子像素元件、 一个绿光子像素元件、 一个蓝光子像素元件 和一个白光子像素元件。
3. 根据权利要求 1所述的有机电致发光显示面板， 其中， 还包括多个薄 膜晶体管， 所述薄膜晶体管与子像素元件一一电性连接， 用于驱动子像素元 件发光。
4. 根据权利要求 3所述的有机电致发光显示面板， 其中， 所述薄膜晶体 管为底栅型薄膜晶体管、 顶栅型薄膜晶体管或共面型薄膜晶体管。
5. 根据权利要求 3所述的有机电致发光显示面板， 其中， 还包括栅驱动 电路、 源驱动电路、 多个行分布的 »驱动线和多个列分布的源驱动线； 所述 棚-驱动电路与»驱动线电性连接， 用于向 »驱动线输入 »驱动信号； 所述源 驱动电路与源驱动线电性连接， 用于向源驱动线输入源驱动信号；
所述栅驱动线包括：
红栅驱动线， 与驱动红光子像素元件的薄膜晶体管的栅电极电性连接， 每行红栅驱动线用于驱动同行分布的多个红光子像素元件；
绿栅驱动线， 与驱动绿光子像素元件的薄膜晶体管的栅电极电性连接， 每行绿栅驱动线用于驱动同行分布的多个绿光子像素元件； 蓝栅驱动线， 与驱动蓝光子像素元件的薄膜晶体管的栅电极电性连接， 每行蓝栅驱动线用于驱动同行分布的多个蓝光子像素元件；
白栅驱动线， 与驱动白光子像素元件的薄膜晶体管的栅电极电性连接， 每行白栅驱动线用于驱动同行分布的多个白光子像素元件；
所述源驱动线包括：
红源驱动线， 与驱动红光子像素元件的薄膜晶体管的源电极电性连接， 每列红源驱动线用于驱动同列分布的多个红光子像素元件；
绿源驱动线， 与驱动绿光子像素元件的薄膜晶体管的源电极电性连接， 每列绿源驱动线用于驱动同列分布的多个绿光子像素元件；
蓝源驱动线， 与驱动蓝光子像素元件的薄膜晶体管的源电极电性连接， 每列蓝源驱动线用于驱动同列分布的多个蓝光子像素元件；
白源驱动线， 与驱动白光子像素元件的薄膜晶体管的源电极电性连接， 每列白源驱动线用于驱动同列分布的多个白光子像素元件；
相邻两行发出相同光色的子像素元件对应的栅驱动电路位于基板的左右 两侧；
相邻两列发出相同光色的子像素元件对应的源驱动电路位于基板的上下
6. 根据权利要求 1-5任一项所述的有机电致发光显示面板， 其中， 每个 子像素单元的子像素元件为顶发射元件或底发射元件。
7. 根据权利要求 1-5任一项所述的有机电致发光显示面板， 其中， 每个 子像素单元的子像素元件的形状为矩形、 菱形或梯形。
8. 根据权利要求 1-5任一项所述的有机电致发光显示面板， 其中， 每个 子像素单元的子像素元件的形状完全相同。
9. 根据权利要求 1-5任一项所述的有机电致发光显示面板， 其中， 每个 子像素单元的子像素元件的形状不完全相同。
10. 根据权利要求 1 5任一项所述的有机电致发光显示面板， 其中，所述 基板为玻璃基板、 石英基板或有机树脂基板。
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