WO2015109676A1 - 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法 - Google Patents

一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法 Download PDF

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WO2015109676A1
WO2015109676A1 PCT/CN2014/076115 CN2014076115W WO2015109676A1 WO 2015109676 A1 WO2015109676 A1 WO 2015109676A1 CN 2014076115 W CN2014076115 W CN 2014076115W WO 2015109676 A1 WO2015109676 A1 WO 2015109676A1
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logic
magnetic
magnetic field
output
phase change
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French (fr)
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缪向水
李祎
钟应鹏
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/1776—Structural details of configuration resources for memories
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/18—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using galvano-magnetic devices, e.g. Hall-effect devices

Definitions

  • Non-volatile logic device based on phase change magnetic material and logic operation method [Technical Field]
  • the present invention is in the field of microelectronic devices, and more particularly, to a nonvolatile logic device and a logic operation method based on phase change magnetic materials.
  • Nanoscale electronic devices with both information storage and processing capabilities are the cornerstone of future massively parallel computing.
  • the information storage can be realized by different physical states of "0" "1", such as the amorphous state and crystalline state of the phase change memory, the electron spin parallel state and the anti-parallel state of the magnetic memory, and the conductive channel formation of the resistive memory. And disconnected two states, etc.
  • Digital logic operations are well established in computer information processing.
  • the phase change magnetic material integrates the phase change material with the characteristics of the dilute magnetic semiconductor material, which not only has the characteristics of rapid reversible structural change of the phase change material, but also effectively introduces spin into the phase change material.
  • the optical, electrical, and magnetic properties of the phase change magnetic material change as the material undergoes a reversible phase transition between the crystalline state and the amorphous state, thereby enabling the material to be controlled by photoinduced phase transformation or electroinduced phase transition. Magnetic properties. This novel feature is expected to be used in new spintronic devices for future information storage and logic operations.
  • phase-change magnetic materials have remained at the exploration of material properties, and subsequent device fabrication and functional design have not been reported in the literature, and these aspects are critical for the practical application of future phase-change magnetic materials. Therefore, it is necessary to design new device functions and operation methods that are not available in existing electronic devices for the novel characteristics of phase change magnetic materials.
  • an object of the present invention is to provide a logic device capable of simultaneously implementing logical operations and information nonvolatile storage based on phase change magnetic materials. Pieces.
  • a nonvolatile logic device based on a phase change magnetic material wherein the phase change magnetic material is composed of a ferromagnetic element doped with a phase change material matrix, the material The magnetic properties can be reversibly regulated by an amorphous-crystalline phase transition.
  • the present invention provides a non-volatile logic device based on a phase change magnetic material, comprising a magnetic head and a bottom electrode, an insulating layer, a phase change magnetic film and a top electrode sequentially attached to the substrate; the substrate comprising a silicon liner a bottom and an active region attached to the silicon substrate; the bottom electrode includes an N-type silicon layer, a P-type silicon layer, and a heating layer; the N-type silicon layer and the P-type silicon layer form a PN diode structure
  • the size of the heating layer is smaller than the size of the P-type silicon layer; the phase change magnetic material film is deposited on the insulating layer and makes electrical contact with the heating layer; the top electrode and the bottom electrode are both connected to the outside An electric pulse signal; a magnetic field input external to the non-volatile logic device; the magnetic field being a uniformly variable magnetic field parallel to a two-dimensional plane of the phase change magnetic film, the intensity of the magnetic field being 0 ⁇ 12000 Oe; the magnetic head is for
  • the phase change magnetic material film is composed of a phase change material matrix doped ferromagnetic element, and the composition expression is ⁇ , wherein ⁇ is a ferromagnetic element, B is a phase change material, 0 ⁇ x 30%.
  • the phase change material B is a binary, ternary or quaternary sulfur compound series, including Ge-Te, Sb-Te, Bi-Te, Ge-Sb, Sn-Te, Sb-Se, In-Se , Ge-Sb-Te, In-Sb-Te, As-Sb-Te, Sn-Sb-Te, Ge-Te-Sn, Sb-Se-Bi, Ga-Te-Se, Ge-Te-Ti, Ge -Te-Sn-O, Ge-Te-Sn-Ag or Ag-In-Sb-Te and mixed alloys thereof.
  • a binary, ternary or quaternary sulfur compound series including Ge-Te, Sb-Te, Bi-Te, Ge-Sb, Sn-Te, Sb-Se, In-Se , Ge-Sb-Te, In-Sb-Te, As-Sb-Te, Sn-Sb-Te
  • the phase change magnetic material film is Ge 2 Sb 2 Te 5 , G ei Sb 2 Te 4 , G ei Sb 4 Te 7 , GeTe, GeSb, Sb 2 Te 3 , Sb 7 . Te 3 . , Ag 5 In 5 Sb 6 . Te 3 . , Bi 2 Te 3 or Sb 2 Se 3 .
  • the ferromagnetic element A includes, but is not limited to, Co, Fe, Ni, and alloys thereof such as FePt, CoPt, CoFeB, TbFeCo, CoCrPtB, CoCrPtTa, and the like.
  • A also includes Mn, Cr, and rare earth elements Gd, Tb, Dy, Ho, Er, and Tm.
  • the phase change magnetic material film is Fe. O2 Ge. . 98 Te, Fe. O8 Ge. 92 Te, Fe 0 . 14 Ge 0 . 86 Te or Fe 0 . 25 Ge 0 . 75 Te.
  • the logic device provided by the invention has various non-volatile physical states, and the amorphous and crystalline phase change magnetic materials have differences in phase structure, electrical characteristics, optical characteristics and magnetic properties, and can be used.
  • the externally applied electrical pulse and the magnetic field are logically operated as logical inputs, and the magnetic physics of the residual magnetization of the device is used to characterize the result of the logical operation.
  • This result can be stored non-volatilely in the magnetic state of the device, the information is read by the magnetic state of the head detector, and the information is erased by applying a coercive magnetic field or an amorphized electric pulse.
  • the device can implement a variety of logical operations such as “substantial implication” logic, "or”, “or”, “and” and “NAND” Boolean logic. , and thus greatly promote the design of non-volatile logic devices.
  • the present invention provides a non-volatile logic operation method comprising the steps of: applying an electrical pulse signal to a top electrode and an active region in a non-volatile logic device, and giving the non-volatile logic device Applying a magnetic field; taking an electrical pulse signal as a logic input Input A, and a magnetic field as another logic input Input B, using the residual magnetic induction of the phase change magnetic material in the non-volatile logic device as a logic output Output, implementing logic Operation.
  • the electrical pulse signal SET is defined as logic 1
  • the electrical pulse signal RESET is defined as logic 0
  • the weak magnetic field having a magnetic field range of 0 ⁇ 500 Oe is defined as logic 1
  • the magnetic field The strong magnetic field with a range of 2500 Oe ⁇ 10000 Oe is defined as logic 0
  • the strong magnetic induction ⁇ > ⁇ with a range of 2.5emu/cc ⁇ 20 emu/cc is defined as logic output 0, and the range is The weaker magnetic induction of 0 ⁇ 1 emu/cc is defined as logic output 1, thus achieving substantial implication logic operations.
  • the electrical pulse signal SET is defined as a logic 0
  • the pulse signal RESET is defined as logic 1
  • the weak magnetic field with a magnetic field range of 0 ⁇ 500 Oe is defined as logic 1
  • the strong magnetic field with a magnetic field range of 2500 Oe ⁇ 10000 Oe is defined as logic 0
  • a strong magnetic induction ⁇ > ⁇ ranging from 2.5emu/cc to 20 emu/cc is defined as a logical output 0, and a weak magnetic induction in the range of 0 to 1 emu/cc is defined as a logical output 1, thereby realizing "or" Boolean logic operation.
  • the electrical pulse signal SET is defined as logic 0
  • the electrical pulse signal RESET is defined as logic 1
  • the weak magnetic field having a magnetic field range of 0 ⁇ 500 Oe is logic 1
  • the strong magnetic field of 2500 Oe ⁇ 10000 Oe is logic 0
  • the strong magnetic induction ⁇ > ⁇ with the range of 2.5 emu/cc ⁇ 20 emu/cc is defined as logic output 1, and the range is 0 ⁇ 1
  • the weaker magnetic induction of emu/cc is defined as a logical output of 0, thus achieving a "or non-" Boolean logic operation.
  • the electrical pulse signal SET is defined as logic 1
  • the electrical pulse signal RESET is defined as logic 0
  • the weak magnetic field having the magnetic field range of 0 ⁇ 500 Oe is logic 0
  • the strong magnetic field of 2500Oe ⁇ 10000 Oe is logic 1
  • the strong magnetic induction range ⁇ > ⁇ ranging from 2.5 emu/cc to 20 emu/cc is defined as logic output 1, and the range is 0 ⁇ 1
  • the weaker magnetic induction e> of emu/cc is defined as a logical output of 0, thus achieving an "and" Boolean logic operation.
  • the electrical pulse signal SET is defined as logic 1
  • the electrical pulse signal RESET is defined as logic 0
  • the weak magnetic field having the magnetic field range of 0 ⁇ 500 Oe is logic 0, the magnetic field range
  • the strong magnetic field of 2500 Oe ⁇ 10000 Oe is logic 1
  • the strong magnetic induction ⁇ > ⁇ ranging from 2.5emu/cc to 20 emu/cc is defined as logic output 0, and the range is 0 ⁇ 1
  • the weak magnetic induction e> of emu/cc is defined as logic output 1, thus implementing NAND logic operations.
  • the present invention also provides a method for reading and erasing a logical operation result, comprising the steps of: storing a logical operation result in a nonvolatile remanent state of a phase change magnetic material; detecting a phase in the device by a magnetic head Residual magnetization of the variable material and converted into a read voltage Stream output, to achieve the reading of information;
  • the erasing of the stored information is achieved by applying a reverse coercive field -He or applying a RESET pulse to amorphize the phase change magnetic material.
  • the invention realizes "substantial implication” logic operation based on phase change control magnetic properties of materials and four Boolean logic operations of "or", “or”, “and” and “NAND”, and the operation result is stored in residual magnetization of materials.
  • the logic device disclosed by the present invention is expected to be used to construct a new type of computer architecture for the next generation of information storage and processing fusion, breaking through the "Von Neumann bottleneck” problem caused by the separation of information storage and processing in the traditional computer architecture.
  • the logic device disclosed by the present invention can be applied as a basic unit in the fields of new solid state memories, logic operators, programmable gate arrays, and system on a chip.
  • FIG. 1 is a schematic diagram of a device structure of a logic device based on a phase change magnetic material according to an embodiment of the present invention.
  • FIG. 2 is an X-ray diffraction pattern of a series of crystalline phase change magnetic materials Fe x G ei _ x Te prepared in accordance with an embodiment of the present invention.
  • FIG 3 is a magnetization curve of a series of crystalline phase change magnetic material Fe x G ei _ x Te films produced by an embodiment of the present invention under a magnetic field of 2K low temperature-lOKOe ⁇ lOKOe.
  • Fig. 4(a) is a typical current-voltage (I-V) characteristic phase transition curve of a phase change magnetic material based logic device according to an embodiment of the present invention.
  • Fig. 4(b) is a typical pulse mode phase transition characteristic of a phase change magnetic material based logic device according to an embodiment of the present invention.
  • FIG. 5 is based on F e provided by an embodiment of the present invention.
  • O2 Ge. Phase transition magnetic control characteristics of logic devices for 98 T e phase change magnetic materials.
  • the object of the present invention is to provide a non-volatile logic device based on phase-change magnetic material and a logic operation method thereof, which can realize "substantial implication” logic, "and” logic, “or” logic , “NAND” logic and “or” logic; a function designed to achieve the storage and processing of information.
  • the present invention can perform "substantial implication” logic in a single device based on the magnetic properties of the phase change magnetic material as a function of the crystalline-amorphous phase transition and the non-volatile change.
  • Boolean logic operations such as "or”, “or”, “and” and “NAND”, the result of which is stored in the device with the residual magnetization of the material, enabling simultaneous storage and processing of information in a logic device.
  • the beneficial effects are expected to be used to build a new type of computer architecture for the next generation of information storage and processing convergence, breaking through the "Von Neumann bottleneck" of information storage and processing separation in the traditional computer architecture.
  • a phase change magnetic material which is a core of a logic device can generate a reversible phase change under the action of Joule heat generated by a current.
  • a medium-strength pulse width SET pulse causes the phase-change magnetic material to heat up above its crystallization temperature T c , from a high-resistance amorphous state to a low-resistance crystalline state; a larger intensity pulse width is narrower RESET pulse heating the phase change material above its melting temperature T m, the transition from the crystalline state to an amorphous state of low resistance to high resistance.
  • phase change magnetic material undergoes a reversible phase transition between the amorphous state and the crystalline state, accompanied by a change in the magnetic properties of the material.
  • Amorphous phase change magnetic materials are not sufficient to form long-range ferromagnetic intersections due to low carrier concentration
  • the magnetic moment is generated macroscopically, and the ferromagnetism of the crystalline phase-change magnetic material is derived from the long-range ferromagnetic exchange of a large number of free carriers in the material. That is to say, in the material phase transition process, the length of the program changes and the length of the ferromagnetic exchange process are consistent. Therefore, the phase transition of the phase change magnetic material can be utilized to regulate its magnetic properties.
  • Both the non-volatile resistance state and the magnetic state of the material can be used to characterize "0" and "1" for information storage and processing.
  • FIG. 1 is a schematic structural diagram of a device of a logic device based on a phase change magnetic material according to an embodiment of the present invention.
  • the logic device includes: a substrate 101, a bottom electrode 102, an insulating layer 103, a phase change magnetic film 104, a top electrode 105, and a magnetic head 106.
  • the substrate 101 is composed of a silicon substrate 101A and an active region 101B thereover, and the active region may be formed by doping a silicon substrate, for example, by incorporating phosphorus (P) or arsenic (As) elements to form N.
  • P phosphorus
  • As arsenic
  • the active active region, doped with boron (B) element can form a P-type active region, the purpose is to reduce the electrical barrier between the active region 101B and the bottom electrode 102, and enhance the conductivity between the two layers as a large-scale array.
  • Word line or bit line when integrated.
  • the bottom electrode 102 is deposited on the substrate 101, and is composed of a layer of N-type silicon 102A, a layer of P-type silicon 102B and a heating layer 102C.
  • the N-type silicon 102A and the P-type silicon 102B form a PN diode structure, which can be used as a large-scale
  • a strobe is connected to the word line or bit line to strobe a particular device for operation at an applied voltage.
  • the size of the N-type silicon 102A and the P-type silicon 102B are the same, and the size of the heating layer 102C is smaller than the size of the P-type silicon 102B.
  • the insulating layer 103 covers the bottom electrode 102 to be insulated from other devices, and the insulating layer 103 may be Si0 2 , Si 3 N 4 , SiON or the like.
  • a phase change magnetic material film 104 is deposited over the insulating layer 103 in electrical contact with the heating layer 102C.
  • the top electrode 105 is deposited on the phase change magnetic film 104.
  • the heating layer 102C and the top electrode 105 may be metals or metal compounds having good electrical conductivity such as Ti, Cu, Al, Ta, TiN, TiW, TaN, TiAIN, and the like.
  • the top and bottom electrodes of the device are connected to an external power supply to provide an electrical pulse input.
  • the uniform variable magnetic field of the row can be limited to the size of a particular device unit and can range from 0 to 12000 Oe.
  • the magnetic head 106 is used to detect the magnetic state of the phase change magnetic material, and is composed of a substrate 106A, two magnetic shield layers 106B, 106D, and a magnetoresistive sensor 106C.
  • the magnetic shielding layers 106B, 106D and the magnetoresistive sensor 106C are all fabricated on the substrate 106A.
  • the magnetic shielding layers 106B and 106D are used to shield the magnetic states of other device units from interference with the magnetic head sensor.
  • the magnetoresistive sensor 106C is capable of detecting the residual magnetization of the phase change magnetic material in the device and converting it into a read current output.
  • the phase change magnetic material film layer 104 is composed of a phase change material matrix doped with ferromagnetic elements, and the composition expression is Among them, strontium is a ferromagnetic element, and B is a phase change material, 0 ⁇ x 30%.
  • the phase change material B may be a series of binary, ternary or quaternary sulfur compounds, including but not limited to: Ge-Te, Sb-Te, Bi-Te, Ge-Sb, Sn-Te, Sb- Se, In-Se, Ge-Sb-Te, In-Sb-Te, As-Sb-Te, Sn-Sb-Te, Ge-Te-Sn, Sb-Se-Bi, Ga-Te-Se, Ge- Te-Ti, Ge-Te-Sn-O, Ge-Te-Sn-Ag, Ag-In-Sb-Te, etc.
  • common stoichiometric materials include but are not limited to: Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 , GeTe, GeSb, Sb 2 Te 3 , Sb 70 Te 30 , Ag 5 In 5 Sb 60 Te 30 , Bi 2 Te 3 , Sb 2 Se 3 and the like.
  • the ferromagnetic element A includes, but is not limited to, Co, Fe, Ni, and alloys thereof such as FePt, CoPt, CoFeB, TbFeCo, CoCrPtB, CoCrPtTa, and the like.
  • A also includes Mn, Cr, and rare earth elements Gd, Tb, Dy, Ho, Er, and Tm.
  • the phase change magnetic material is Fe. O2 Ge. . 98 Te, Fe. O8 Ge. 92 Te, Fe. 14 Ge. 86 Te, Fe. . 25 Ge. 75 Te.
  • Both amorphous and crystalline phase change magnetic materials exhibit good hysteresis characteristics, and the saturation magnetization, residual magnetization, and coercive field of the material vary greatly due to different crystallinity.
  • FIG. 2 is an X-ray diffraction pattern of a series of crystalline phase change magnetic materials Fe x G ei _ x Te prepared in accordance with an embodiment of the present invention.
  • the material was prepared by pulsed laser deposition at a substrate temperature of 30 CTC. It can be seen from Fig. 2 that the F ex G ei _ x Te film is a highly preferred (001) oriented rhombohedral structure at an iron concentration of X ⁇ 0.38. In Fig. 2, only the GeTe diffraction peak of the matrix material appears. , Say It is clear that at this concentration, the film material is a single phase.
  • FIG. 3 is a magnetization curve (MH) of a series of crystalline phase change magnetic material Fe x G ei _ x Te films produced in an embodiment of the present invention under the in-plane magnetic field of 2K low temperature-10 KOe ⁇ 10 KOe.
  • the overall magnetization and residual magnetization of the film are maximized.
  • the Fe content is different, the magnetization and residual magnetization of the film are different, but the magnetic properties of the film are consistent with the phase transition characteristics of the material.
  • Figure 4 (a) is based on F e produced in accordance with an embodiment of the present invention. . . . 2 Ge.
  • Figure 4 (b) is based on F e produced in accordance with an embodiment of the present invention. . . . 2 Ge. Typical pulse mode phase transition characteristics of logic devices for 98 T e phase change magnetic materials.
  • a SET pulse with a pulse amplitude of 0.8 V and a pulse width of 200 ns is applied to the device, the device switches from a high-impedance state to a low-impedance state; when a pulse amplitude of 2 V is applied to the device, the pulse is applied.
  • a RESET pulse with a width of 30 ns switches the device from a low-impedance state to a high-impedance state.
  • FIG. 5 is based on F ea provided by an embodiment of the present invention. 2 Ge. . Phase transition magnetic control characteristics of logic devices for 98 T e phase change magnetic materials.
  • C represents a sample of a crystalline phase change magnetic material deposited at a substrate temperature of 30 CTC
  • A represents an amorphous sample deposited at room temperature
  • C a represents a sample after crystallization of an amorphous sample.
  • the upper left illustration shows the conductance corresponding to the sample in the three film states, and the lower right illustration is the three types. X-ray diffraction pattern of the same film state. It can be seen from Fig.
  • Table 1 is a schematic truth table for realizing substantial implication logic (IMP) of a logic device based on a phase change magnetic material according to an embodiment of the present invention.
  • IMP substantial implication logic
  • the applied electric pulse is input Input A, the SET pulse is logic 1, RESET is logic 0; the applied magnetic field is input Input B, and the magnetic field range is 0 ⁇ 500 Oe (100 Oe in Figure 5, Oe is the magnetic field unit Oersted)
  • the weak magnetic field is logic 1
  • the strong magnetic field with a magnetic field range of 2500 ⁇ 10000 Oe (5000 Oe in Figure 5) is logic 0.
  • the logic output Output is the residual magnetic induction Br of the phase change magnetic material, and the magnetic head 106 can be used to detect the residual magnetic state and read out.
  • a strong Br with a range of 2.5 to 20 emu/cc is a logic output
  • a weaker range of 0 to 1 emu/cc is a logical output of 1.
  • the stored information is erased by applying a reverse coercive field -He (1500 Oe as shown in Fig. 5) or applying a RESET pulse to amorphize the phase change magnetic material.
  • a reverse coercive field -He (1500 Oe as shown in Fig. 5)
  • RESET pulse to amorphize the phase change magnetic material.
  • Table 2 is a schematic truth table for implementing "or" Boolean logic based on a phase change magnetic material-based logic device according to an embodiment of the present invention.
  • the applied electric pulse is input Input A, and the RESET pulse is logic 1.
  • the logic output Output is the residual magnetic induction of the phase change magnetic material. B The residual state can be detected by the magnetic head and read out.
  • the strong range of 2.5 ⁇ 20 emu/cc is > logic output 0, the range is 0 ⁇ 1
  • the weak of emu/cc is the logic output 1.
  • Table 3 is a schematic diagram of a logic device implemented by a phase change magnetic material according to an embodiment of the present invention or a non-Boolean logic.
  • the external electrical pulse is input Input A, and the RESET pulse is logic 1.
  • the logic output Output is the residual magnetic induction B of the phase change magnetic material.
  • the magnetic head can be used to detect the residual magnetic state and read out.
  • a strong ⁇ > of the range 2.5 to 20 emu/cc is a logical output 1
  • a range of 0 to 1 emu/cc is a logical output of 0. table 3
  • Table 4 is a schematic truth table for implementing "and" Boolean logic for a logic device based on a phase change magnetic material according to an embodiment of the present invention.
  • the applied electrical pulse is input Input A, and the SET pulse is logic 1.
  • RESET is logic 0; the applied magnetic field is the input Input B, the weak magnetic field with the magnetic field range of 0 ⁇ 500 Oe is logic 0, and the strong magnetic field with the magnetic field range of 2500 ⁇ 10000 Oe is logic 1.
  • the logic output Output is the residual magnetic induction of the phase change magnetic material. B The residual state can be detected by the magnetic head and read out.
  • the strong range of 2.5 ⁇ 20 emu / cc> is the logical output 1, the range is 0 ⁇ 1
  • the weak of emu / cc is the logic output 0.
  • Table 5 is a schematic diagram of the principle of non-boolean logic implemented by a logic device based on a phase change magnetic material according to an embodiment of the present invention.
  • the applied electrical pulse is input Input A, and the SET pulse is logic 1.
  • RESET is logic 0; the applied magnetic field is input Input B, the magnetic field ranges from 0 to 500 Oe, if the magnetic field is logic 0, and the magnetic field ranges from 2500 to 10000 Oe, the strong magnetic field is logic 1.
  • the logic output Output is the residual magnetic induction B of the phase change magnetic material. The magnetic head can be used to detect the residual magnetic state and read out.
  • the stronger B r with a range of 2.5 ⁇ 20 emu/cc is a logical output 0, and the weak range of 0 ⁇ 1 emu/cc is a logical output 1.
  • Non-Boolean Logic Output Input A NAh JD Input B
  • the logic operation of the logic device of the present invention realizes stable and reversible phase-change magnetic control characteristics based on the device, and the operation result can be directly non-volatile with material
  • the magnetic state is stored in the device, thus having the characteristics of computation and storage fused in a single unit.
  • Boolean logic operations such as XOR, XOR, etc. can be extended based on the five basic logic operations provided by the present invention to implement a full set of complete Boolean logic operations.
  • the present invention enables a variety of logic operations using a single device, and the flexibility to define logic 0 and 1 in accordance with the required logic functions in practical applications will greatly facilitate the design and application of non-volatile logic devices.

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Abstract

本发明公开了一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法，非易失性逻辑器件包括磁头以及依次附着于衬底上的底电极、绝缘层，相变磁性薄膜和顶电极；其中相变磁性材料由一种相变材料基质中掺杂铁磁性元素构成，材料的磁性能够通过非晶态-晶态相变来可逆调控。本发明基于材料的相变控磁特性实现"实质蕴涵"逻辑运算以及"与"、"或"、"与非"和"或非"四种布尔逻辑运算，其运算结果以材料的剩余磁化存储在器件中，从而实现在单个逻辑器件中同时进行信息的存储和处理的效果。本发明公开的逻辑器件能够作为基本单元应用于新型固态存储器、逻辑运算器、可编程门阵列和片上系统等领域。

Description

一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法 [技术领域]
本发明属于微电子器件领域， 更具体地， 涉及一种基于相变磁性材料 的非易失性逻辑器件及逻辑操作方法。
[背景技术]
面对大数据时代的海量信息挑战， 存储与处理融合新型信息器件被认 为是突破传统冯诺依曼计算机体系架构瓶颈的关键。 纳米级兼具信息存储 和处理功能的电子器件是未来大规模并行运算的基石。 信息存储可以通过 不同两种物理状态表征 " 0" " 1 "实现， 如相变存储器的非晶态和晶态， 磁 存储器的电子自旋平行态和反平行态， 阻变存储器的导电通道形成和断开 两种状态等。 数字式逻辑运算是已成熟应用于计算机信息处理方式。
相变磁性材料集相变材料与稀磁半导体材料特性于一体， 不仅具有相 变材料快速可逆的结构变化特点， 而且将自旋有效引入到相变材料中。 相 变磁性材料的光、 电、 磁等特性会随着材料在晶态与非晶态之间发生可逆 相变而发生变化， 从而可实现通过光致相变或电致相变来调控材料的磁特 性。 这一新奇特性被展望可用于新型自旋电子器件中， 应用于未来信息存 储和逻辑运算领域中。 然而， 迄今而至， 相变磁性材料的研究仍然停留在 材料特性探索， 而后续的器件制备以及功能设计仍然未见相关文献报道， 而这些方面对于未来相变磁性材料的实际应用极为关键。 因此， 需要针对 相变磁性材料的新奇特性， 设计现有电子器件所不具备的新型器件功能和 操作方法。
[发明内容]
针对现有技术的以上不足和迫切需求， 本发明的目的在于提供了一种 基于相变磁性材料的能同时实现逻辑运算和信息非易失性存储的逻辑器 件。
为实现上述目的， 按照本发明的一个方面， 提供了一种基于相变磁性 材料的非易失性逻辑器件， 其中相变磁性材料由一种相变材料基质中掺杂 铁磁性元素构成， 材料的磁性能够通过非晶态-晶态相变来可逆调控。
本发明提供了一种基于相变磁性材料的非易失性逻辑器件， 包括磁头 以及依次附着于衬底上的底电极、 绝缘层、 相变磁性薄膜和顶电极； 所述 衬底包括硅衬底以及附着于所述硅衬底上的有源区； 所述底电极包括 N型 硅层、 P型硅层和加热层；所述 N型硅层和所述 P型硅层形成 PN二极管结 构； 加热层的尺寸小于 P型硅层的尺寸； 所述相变磁性材料薄膜沉积在所 述绝缘层上并与所述加热层形成电接触； 所述顶电极和所述底电极均连接 至外部的电脉冲信号； 所述非易失性逻辑器件外部还存在一个磁场输入； 所述磁场为与所述相变磁性薄膜的二维平面平行的均匀可变磁场， 所述磁 场的强度为 0 ~ 12000 Oe; 所述磁头用于检测相变磁性材料的磁状态， 所述 磁头包括基底、 依次附着于所述基底上的第一磁屏蔽层、 磁阻传感器以及 第二磁屏蔽层； 当磁头检测某个器件的磁状态时， 第一磁屏蔽层和第二磁 屏蔽层用于屏蔽周围其他器件单元磁状态对磁头传感器的干扰， 磁阻传感 器用于检测器件中相变磁性材料的剩余磁化强度并将其转换为读电流输 出。
其中， 所述相变磁性材料薄膜由一种相变材料基质掺杂铁磁性元素构 成，组分表达式为 ΑχΒ^,其中 Α为铁磁性元素， B为相变材料， 0<x 30%。
其中， 所述相变材料 B 为二元、 三元或四元硫系化合物系列， 包括 Ge-Te、 Sb-Te、 Bi-Te、 Ge-Sb、 Sn-Te、 Sb-Se、 In-Se、 Ge-Sb-Te, In-Sb-Te、 As-Sb-Te、 Sn-Sb-Te、 Ge-Te-Sn, Sb-Se-Bi、 Ga-Te-Se, Ge-Te-Ti, Ge-Te-Sn-O, Ge-Te-Sn-Ag或 Ag-In-Sb-Te及其混合合金。
其中， 所述相变磁性材料薄膜为 Ge2Sb2Te5、 GeiSb2Te4、 GeiSb4Te7、 GeTe、 GeSb、 Sb2Te3、 Sb7。Te3。、 Ag5In5Sb6。Te3。、 Bi2Te3或 Sb2Se3。 所述的 铁磁性元素 A包括但不局限于 Co、 Fe、 Ni及其合金，如 FePt、 CoPt、 CoFeB、 TbFeCo、 CoCrPtB、 CoCrPtTa等。 A也包括 Mn、 Cr以及稀土元素 Gd、 Tb、 Dy、 Ho、 Er和 Tm等。
其中， 所述相变磁性材料薄膜为 Fe。O2Ge。.98Te、 Fe。O8Ge。.92Te、 Fe0.14Ge0.86Te或 Fe0.25Ge0.75Te。
本发明提供的逻辑器件， 具有多种非易失性的物理状态， 非晶态和晶 态的相变磁性材料在物相结构、 电学特性、 光学特性和磁性特性等方面均 存在差异， 可以用于信息的存储。 针对材料的这一特点， 本发明以外加电 脉冲以及磁场作为逻辑输入进行逻辑运算， 以器件的剩余磁化强度这一磁 特性物理量表征逻辑运算的结果。 这一结果能够非易失性地存储在器件磁 状态中， 通过磁头检测器磁状态将信息读出， 并通过施加一个矫顽磁场或 非晶化电脉冲实现信息的擦除。 此外， 在不同的逻辑 "0"和 " 1 " 的定义 下， 器件可以实现 "实质蕴涵"逻辑、 "或" 、 "或非" 、 "与"和 "与 非"布尔逻辑等多种逻辑运算， 进而极大地促进非易失性逻辑器件的设计。
本发明提供了一种非易失性逻辑操作方法， 包括以下歩骤： 通过给非 易失性逻辑器件中的顶电极和有源区施加电脉冲信号， 且给所述非易失性 逻辑器件施加磁场； 以电脉冲信号为一个逻辑输入 Input A， 以磁场为另一 个逻辑输入 Input B， 以所述非易失性逻辑器件中的相变磁性材料的剩余磁 感应强度 为逻辑输出 Output, 实现逻辑运算。
其中， 对于逻辑输入 Input A， 将电脉冲信号 SET定义为逻辑 1， 电脉 冲信号 RESET定义为逻辑 0;对于逻辑输入 Input B,将磁场范围为 0 ~ 500 Oe的弱磁场定义为逻辑 1，磁场范围为 2500 Oe~ 10000 Oe的强磁场定义为 逻辑 0; 对于逻辑输出 Output, 将范围为 2.5emu/cc ~ 20 emu/cc的较强的磁 感应强度 Β>·定义为逻辑输出 0，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强 度 定义为逻辑输出 1， 从而实现实质蕴涵逻辑运算。
其中， 对于逻辑输入 Input A， 将电脉冲信号 SET冲定义为逻辑 0， 电 脉冲信号 RESET定义为逻辑 1；对于逻辑输入 Input B，将磁场范围为 0 ~ 500 Oe的弱磁场定义为逻辑 1，磁场范围为 2500Oe ~ 10000 Oe的强磁场定义为 逻辑 0; 对于逻辑输出 Output, 将范围为 2.5emu/cc ~ 20 emu/cc的较强的磁 感应强度 Β>·定义为逻辑输出 0，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强 度 定义为逻辑输出 1， 从而实现 "或"布尔逻辑运算。
其中， 对于逻辑输入 Input A， 将电脉冲信号 SET定义为逻辑 0， 电脉 冲信号 RESET定义为逻辑 1 ;对于逻辑输入 Input B ,将磁场范围为 0 ~ 500 Oe的弱磁场为逻辑 1， 磁场范围为 2500 Oe ~ 10000 Oe的强磁场为逻辑 0; 对于逻辑输出 Output,将范围为 2.5 emu/cc~ 20 emu/cc的较强的磁感应强度 Β>·定义为逻辑输出 1，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义 为逻辑输出 0， 从而实现 "或非"布尔逻辑运算。
其中， 对于逻辑输入 Input Α， 将电脉冲信号 SET定义为逻辑 1， 电脉 冲信号 RESET定义为逻辑 0;对于逻辑输入 Input B ,将磁场范围为 0 ~ 500 Oe的弱磁场为逻辑 0， 磁场范围为 2500Oe ~ 10000 Oe的强磁场为逻辑 1 ; 对于逻辑输出 Output,将范围为 2.5 emu/cc~ 20 emu/cc的较强的磁感应强度 Β>·定义为逻辑输出 1，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义 为逻辑输出 0， 从而实现 "与"布尔逻辑运算。
其中， 对于逻辑输入 Input Α， 将电脉冲信号 SET定义为逻辑 1， 电脉 冲信号 RESET定义为逻辑 0;对于逻辑输入 Input B ,将磁场范围为 0 ~ 500 Oe的弱磁场为逻辑 0， 磁场范围为 2500 Oe~ 10000 Oe的强磁场为逻辑 1 ; 对于逻辑输出 Output,将范围为 2.5emu/cc~ 20 emu/cc的较强的磁感应强度 Β>·定义为逻辑输出 0，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义 为逻辑输出 1， 从而实现 "与非"布尔逻辑运算。
本发明还提供了一种逻辑运算结果的读取和擦除方法， 包括下述歩骤： 将逻辑运算结果存储在相变磁性材料的非易失性剩磁状态中； 通过磁头检测器件中相变磁性材料的剩余磁化强度并转换成一个读电 流输出， 实现信息的读取；
通过施加一个反向矫顽磁场 -He或者施加一个 RESET脉冲将相变磁 性材料非晶化， 实现存储信息的擦除。
本发明基于材料的相变控磁特性实现 "实质蕴涵"逻辑运算以及 "或" 、 "或非" 、 "与"和 "与非" 四种布尔逻辑运算， 其运算结果以 材料的剩余磁化存储在器件中， 从而实现在单个逻辑器件中同时进行信息 的存储和处理的效果。 本发明公开的逻辑器件有望用于构建下一代信息存 储和处理融合的新型计算机体系架构， 突破传统计算机架构中由于信息存 储和处理分离造成的 "冯诺依曼瓶颈"问题。本发明公开的逻辑器件能够作为 基本单元应用于新型固态存储器、 逻辑运算器、 可编程门阵列和片上系统 等领域。
[附图说明]
图 1 是本发明实施例提供的基于相变磁性材料的逻辑器件的器件结构 示意图。
图 2是本发明实施例制得的一系列晶态相变磁性材料 FexGei_xTe的 X 射线衍射图谱。
图 3是本发明实施例制得的一系列晶态相变磁性材料 FexGei_xTe薄膜在 2K低温 -lOKOe ~ lOKOe面内磁场作用下的磁化曲线。
图 4 (a) 是本发明实施例提供的基于相变磁性材料的逻辑器件的典型 电流 -电压 （I-V) 特性相变曲线。
图 4 (b) 是本发明实施例提供的基于相变磁性材料的逻辑器件的典型 脉冲模式相变特性。
图 5是本发明实施例提供的基于 Fe。O2Ge。.98Te相变磁性材料的逻辑器 件的相变控磁特性。
[具体实施方式]
为了使本发明的目的、 技术方案及优点更加清楚明白， 以下结合附图 及实施例， 对本发明进行进一歩详细说明。 应当理解， 此处所描述的具体 实施例仅用以解释本发明， 并不用于限定本发明。 此外， 下面所描述的本 发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以 相互组合。
针对现有技术的缺陷， 本发明的目的在于提供一种基于相变磁性材料 的非易失性逻辑器件及其逻辑操作方法， 可实现 "实质蕴涵"逻辑、 "与" 逻辑、 "或"逻辑、 "与非"逻辑和 "或非"逻辑； 旨在实现信息的存储 和处理融合的功能。
本发明与现有技术相比， 能够基于相变磁性材料所具有的磁性随晶态- 非晶态相变而同歩发生非易失性变化的特性， 在单个器件中进行 "实质蕴 涵"逻辑以及 "或" 、 "或非" 、 "与"和 "与非"等布尔逻辑运算， 运 算结果以材料的剩余磁化存储在器件之中， 实现在一个逻辑器件中同时进 行信息的存储和处理的有益效果， 有望用于构建下一代信息存储和处理融 合的新型计算机体系架构， 突破传统计算机架构中信息存储和处理分离的 "冯诺依曼瓶颈" 。
现在将参考示出本发明的示范性实施例的附图，更全面地描述本发明。 然而， 可以用许多不同的形式实施本发明， 并且本发明不应该理解为限制 于这里列出的实施例； 更确切地说， 提供这些实施例以便本发明公开更彻 底和全面， 并且向本领域的技术人员充分地传达本发明的观念。
在本发明中， 作为逻辑器件核心的相变磁性材料能在电流产生的焦耳 热作用下产生可逆相变。 一个中等强度的脉宽较宽的 SET脉冲使相变磁性 材料升温超过其晶化温度 Tc， 从高电阻的非晶态转变成低电阻的晶态； 一 个较大强度的脉宽较窄的 RESET脉冲使相变磁性材料升温超过其熔化温度 Tm， 从低电阻的晶态转变成高电阻的非晶态。
相变磁性材料在非晶态和晶态之间可逆相变的同时， 伴随着材料磁性 的变化。 非晶态相变磁性材料由于载流子浓度低不足以形成长程的铁磁交 换作用， 以一种局域的短程铁磁交换作用宏观产生磁矩， 而晶态相变磁性 材料的铁磁性来源于材料内大量自由载流子调控的长程铁磁交换作用。 也 就是说在材料相变过程中， 结构的长短程序变化和铁磁交换作用的长短程 序变化是一致的。 因此， 可以利用相变磁性材料的结构相变来调控其磁特 性。材料非易失性的电阻状态和磁状态都能够用来表征" 0"和 "1"，用于信息 的存储和处理。
图 1是本发明实施例提供的基于相变磁性材料的逻辑器件的器件结构 示意图。 参考图 1， 逻辑器件包括： 衬底 101， 底电极 102， 绝缘层 103， 相变磁性薄膜 104，顶电极 105和磁头 106。具体的，衬底 101由硅衬底 101A 及其上方的有源区 101B构成， 有源区可以通过对硅衬底掺杂形成， 例如掺 入磷 （P) 或砷 （As) 元素可形成 N性有源区， 掺入硼 （B ) 元素可形成 P 型有源区， 目的是降低有源区 101B和底电极 102之间的电势垒， 增强两层 之间的导电性以作为大规模阵列集成时的字线或位线。 底电极 102沉积在 衬底 101上方， 由一层 N型硅 102A、一层 P型硅 102B和一个加热层 102C 构成， N型硅 102A和 P型硅 102B形成一个 PN二极管结构， 可以作为大 规模阵列集成时， 与字线或位线连接选通管， 以在外加电压下选通特定的 器件进行操作。 N型硅 102A和 P型硅 102B的尺寸一致， 加热层 102C的 尺寸小于 P型硅 102B的尺寸。 绝缘层 103覆盖了底电极 102， 以与其他器 件绝缘隔离， 绝缘层 103可以是 Si02、 Si3N4、 SiON等。 相变磁性材料薄膜 104沉积在绝缘层 103之上， 与加热层 102C形成电接触。为使加热层 102C 产生的电致焦耳热更集中， 在低能耗下达到良好的电致相变效果， 可以减 小加热层 102C的尺寸， 其能达到的最小尺寸由光刻工艺的特征尺寸决定。 顶电极 105沉积在相变磁性薄膜 104之上。加热层 102C和顶电极 105可以 是导电性良好的金属或金属化合物， 如 Ti、 Cu、 Al、 Ta、 TiN、 TiW、 TaN、 TiAIN等。器件顶电极和底电极连接至一个外加电源提供电脉冲输入。器件 外部还存在一个磁场输入， 其中磁场是一个与相变磁性薄膜的二维平面平 行的均匀可变磁场， 可以被局限在特定器件单元的尺寸范围内， 其强度范 围可为 0 ~ 12000 Oe。磁头 106用来检测相变磁性材料的磁状态， 由一层基 底 106A、 两层磁屏蔽层 106B、 106D和磁阻传感器 106C构成。 磁屏蔽层 106B、 106D和磁阻传感器 106C都制作在基底 106A上， 当磁头检测某个 器件的磁状态时， 磁屏蔽层 106B和 106D用来屏蔽周围其他器件单元磁状 态对磁头传感器的干扰，磁阻传感器 106C能够检测器件中相变磁性材料的 剩余磁化强度并转换成一个读电流输出。
所述的相变磁性材料薄膜层 104由一种相变材料基质掺杂铁磁性元素 构成， 组分表达式为
Figure imgf000010_0001
其中 Α为铁磁性元素， B为相变材料， 0<x 30%。 所述的相变材料 B可以为二元、 三元或四元硫系化合物系列， 包括但 不局限于： Ge-Te、 Sb-Te、 Bi-Te、 Ge-Sb、 Sn-Te、 Sb-Se、 In-Se、 Ge-Sb-Te, In-Sb-Te、 As-Sb-Te, Sn-Sb-Te、 Ge-Te-Sn, Sb-Se-Bi、 Ga-Te-Se, Ge-Te-Ti, Ge-Te-Sn-O, Ge-Te-Sn-Ag, Ag-In-Sb-Te等及其混合合金， 常见的化学计量 比材料包括但不局限于： Ge2Sb2Te5、 Ge1Sb2Te4, Ge1Sb4Te7, GeTe、 GeSb、 Sb2Te3、 Sb70Te30、 Ag5In5Sb60Te30、 Bi2Te3、 Sb2Se3等。
所述的铁磁性元素 A包括但不局限于 Co、 Fe、 Ni及其合金， 如 FePt、 CoPt、 CoFeB、 TbFeCo、 CoCrPtB、 CoCrPtTa等。 A也包括 Mn、 Cr以及稀 土元素 Gd、 Tb、 Dy、 Ho、 Er和 Tm等。
优选的， 所述的相变磁性材料为 Fe。O2Ge。.98Te、 Fe。O8Ge。.92Te、 Fe。.14Ge。.86Te、 Fe。.25Ge。.75Te。非晶态和晶态的相变磁性材料都展示出良好的 磁滞特性， 且材料的饱和磁化强度、 剩余磁化强度和矫顽场由于结晶度不 同而存在较大差异。
图 2是本发明实施例制得的一系列晶态相变磁性材料 FexGei_xTe的 X 射线衍射图谱。材料是在 30CTC衬底温度下采用脉冲激光沉积制备得到。从 图 2中可以看出， FexGei_xTe薄膜在铁浓度 X < 0.38时， 均是一种高度择优 (001 ) 取向的斜方六面体结构， 图 2中只出现基体材料 GeTe衍射峰， 说 明在此浓度条件下， 薄膜材料均是一种单相。 随着铁掺入量 X增加， 当 χ = 0.25时，（202)(042)等斜方六面体 GeTe晶面出现，当铁掺入量达到 x = 0.38 时， FeTe二相出现， 并且基体 GeTe的衍射峰变得非常弱， 第二相的存在压 抑了 GeTe晶粒的生长。 由于材料的 c轴择优取向， 能确定随着铁掺入量的 增加， FexGei_xTe薄膜的晶胞沿 c轴出现少量的膨胀， 这说明掺入的铁进行 了基体材料 GeTe晶格里面。
图 3是本发明实施例制得的一系列晶态相变磁性材料 FexGei_xTe薄膜 在 2K低温 -10 KOe ~ 10 KOe面内磁场作用下的磁化曲线 （M-H)。 从图 3 中可以看出， Fe的浓度含量从 x = 0.02， x = 0.08增力口到 x = 0.14时， 磁滞 回线中出现的矫顽场均高于 1200 Oe， 说明 FexGei_xTe薄膜中存在着铁磁交 换作用。 当 Fe浓度为 x = 0.02时， 薄膜整体的磁化强度和剩余磁化强度都 达到最大。 不同浓度 Fe含量时， 薄膜磁化强度和剩余磁化强度存在差异， 但是其磁特性随材料相变特性的变化规律一致。
图 4 (a) 是本发明实施例制得的基于 Fe。.。2Ge。.98Te相变磁性材料的逻 辑器件的典型电流 -电压（I-V)特性相变曲线。 器件中各层薄膜在室温下沉 积得到。参考图 4 (a)，器件初始态为高阻非晶态， 当施加电压超过其阈值， 其状态转变成低阻晶态。 高阻非晶态和低阻晶态都是非易失性的电阻态。
图 4 ( b ) 是本发明实施例制得的基于 Fe。.。2Ge。.98Te相变磁性材料的逻 辑器件的典型脉冲模式相变特性。 参考图 4 ( b ) , 当对器件施加脉冲幅值为 0.8 V, 脉冲宽度为 200 ns的 SET脉冲， 器件从高阻态切换到低阻态； 当对 器件施加脉冲幅值为 2 V， 脉冲宽度为 30 ns的 RESET脉冲， 器件从低阻 态切换到高阻态。
图 5是本发明实施例提供的基于 Fea。2Ge。.98Te相变磁性材料的逻辑器 件的相变控磁特性。 图中 C代表是 30CTC衬底温度下沉积的晶态相变磁性 材料样品， A代表室温下沉积的非晶态样品， Ca代表非晶态样品晶化后的 样品。 左上插图是三种薄膜状态下样品所对应的电导， 右下插图是三种不 同薄膜状态的 X射线衍射图谱。 从图 5中可以看出， C-A-Ca三种状态的薄 膜都具有磁滞回线， 说明这三种结构相中都存在着 Fe离子之间的铁磁交换 作用。 非晶态 A的饱和磁化强度只为 2.5 emu/cc, 晶态 态样品的饱和磁 化强度为 13.9 emu/cc。制备的晶态 C态的饱和磁化强度与晶态 Ca非常接近， 约为 14.9 emu/cc 观察到的饱和磁化强度随着 C-A-C的变化说明相变磁性 材料 Fe。.。2Ge。.98Te薄膜的磁性随着结构相的改变而发生变化。 图中两种晶 态 C和 Ca样品之间饱和磁化强度和矫顽场的变化主要是由晶态样品结晶度 的差异引起的， 这与图中 XRD结果一致。 因此， 在基于 Fe。O2Ge。.98Te相变 磁性材料的逻辑器件中， 材料的磁性将随着电脉冲导致的相变而发生可逆 变化， 就如同电导一样， 电致相变可以有效调控材料磁性。
表 1为本发明实施例提供的基于相变磁性材料的逻辑器件实现实质蕴 涵逻辑（IMP) 的原理真值表。 利用非晶态下和晶态下磁特性的差异： 非晶 态磁滞回线较小， 晶态则具有明显的磁滞特性， 存在较大的剩余磁感应强 度 Br。 外加电脉冲为输入 Input A， SET脉冲为逻辑 1， RESET为逻辑 0; 外加磁场为输入 Input B， 磁场范围为 0 ~ 500 Oe (如图 5中的 100 Oe， Oe 为磁场单位奥斯特） 的弱磁场为逻辑 1， 磁场范围为 2500 ~ 10000 Oe (如 图 5中的 5000 Oe)的强磁场为逻辑 0。逻辑输出 Output为相变磁性材料的 剩余磁感应强度 Br， 可以用磁头 106检测剩磁状态并读出。范围为 2.5 ~ 20 emu/cc的较强的 Br为逻辑输出 0， 范围为 0 ~ 1 emu/cc的较微弱的 Β>·为逻 辑输出 1。
存储的信息擦除，可施加一个反向矫顽磁场 -He (如图 5中的 1500 Oe) 或者施加一个 RESET脉冲将相变磁性材料非晶化。 根据以上原理可知： 当 施加 SET脉冲将相变磁性材料操作至晶态， 且具有较大外磁场使材料达到 饱和磁化强度后， 器件才会具有剩磁状态 ^。也就是说， 只有 Input A为 1， Input B为 0时， Output才为 0， 符合实质蕴涵逻辑真值表。 当改变逻辑输 入和输出 "0"和 " 1 " 的编码定义时， 器件还能实现更多的布尔逻辑操作。 表 1
Figure imgf000013_0001
表 2为本发明实施例提供的基于相变磁性材料的逻辑器件实现 "或" 布尔逻辑的原理真值表。外加电脉冲为输入 Input A, RESET脉冲为逻辑 1，
SET为逻辑 0; 外加磁场为输入 Input B， 磁场范围为 0 ~ 500 Oe的弱磁场 为逻辑 1，磁场范围为 2500 ~ 10000 Oe的强磁场为逻辑 0。逻辑输出 Output 为相变磁性材料的剩余磁感应强度 B 可以用磁头检测剩磁状态并读出。 范围为 2.5 ~ 20 emu/cc的较强的 Β>·为逻辑输出 0，范围为 0 ~ 1 emu/cc的微 弱的 为逻辑输出 1。
表 2
Figure imgf000013_0002
表 3为本发明实施例提供的基于相变磁性材料的逻辑器件实现 "或非 布尔逻辑的原理真值表。外加电脉冲为输入 Input A, RESET脉冲为逻辑 1，
SET为逻辑 0; 外加磁场为输入 Input B， 磁场范围为 0 ~ 500 Oe的弱磁场 为逻辑 1，磁场范围为 2500 ~ 10000 Oe的强磁场为逻辑 0。逻辑输出 Output 为相变磁性材料的剩余磁感应强度 B 可以用磁头检测剩磁状态并读出。 范围为 2.5 ~ 20 emu/cc的较强的 Β>·为逻辑输出 1，范围为 0 ~ 1 emu/cc的微 弱的 为逻辑输出 0。 表 3
Figure imgf000014_0001
表 4为本发明实施例提供的基于相变磁性材料的逻辑器件实现 "与" 布尔逻辑的原理真值表。 外加电脉冲为输入 Input A， SET脉冲为逻辑 1，
RESET为逻辑 0; 外加磁场为输入 Input B， 磁场范围为 0 ~ 500 Oe的弱磁 场为逻辑 0，磁场范围为 2500 ~ 10000 Oe的强磁场为逻辑 1。逻辑输出 Output 为相变磁性材料的剩余磁感应强度 B 可以用磁头检测剩磁状态并读出。 范围为 2.5 ~ 20 emu/cc的较强的 Β>·为逻辑输出 1，范围为 0 ~ 1 emu/cc的微 弱的 为逻辑输出 0。
表 4
Figure imgf000014_0002
表 5为本发明实施例提供的基于相变磁性材料的逻辑器件实现 "与非 布尔逻辑的原理真值表。 外加电脉冲为输入 Input A， SET脉冲为逻辑 1，
RESET为逻辑 0; 外加磁场为输入 Input B， 磁场范围为 0 ~ 500 Oe的若磁 场为逻辑 0，磁场范围为 2500 ~ 10000 Oe的强磁场为逻辑 1。逻辑输出 Output 为相变磁性材料的剩余磁感应强度 B 可以用磁头检测剩磁状态并读出。 范围为 2.5 ~ 20 emu/cc的较强的 Br为逻辑输出 0，范围为 0 ~ 1 emu/cc的微 弱的 为逻辑输出 1。 与非布尔逻辑 Output = Input A NAh JD Input B
输入 Input A 输出 Input B 输出 Output
(外加电脉冲） (外加磁场） (薄膜剩磁状态）
0 (RESET) 1 (强磁场） 1 (弱剩磁状态）
0 (RESET) 0 (弱磁场） 1 (弱剩磁状态）
1 (SET) 1 (强磁场） 0 (强乘 I」磁状态）
1 (SET) 0 (弱磁场） 1 (弱剩磁状态） 本发明的逻辑器件的逻辑运算实现基于器件的稳定可逆的相变控磁特 性， 其运算结果可以直接非易失性的以材料的磁状态存储在器件中， 从而 具有计算和存储在单个单元中融合的特点。 通过对电脉冲、 磁场两种输入 和相变磁性材料剩磁状态输出与逻辑 0和 1之间对应关系进行不同定义， 可以实现 "实质蕴涵"、 "或"、 "或非"、 "与"和 "与非"等五种逻辑基本 运算， 且几种逻辑都为并行运算， 仅需一歩操作即可完成， 高效简洁。 更 复杂的布尔逻辑运算如异或 XOR、 同或等， 可以基于本发明提供的五种逻 辑基本运算进行扩展实现， 从而实现全套完整的布尔逻辑运算。 本发明利 用单个器件能够实现多种逻辑运算功能， 在实际应用中更能够根据所需的 逻辑功能灵活地定义逻辑 0和 1，将极大地促进非易失性逻辑器件的设计和 应用。
本领域的技术人员容易理解， 以上所述仅为本发明的较佳实施例而已， 并不用以限制本发明， 凡在本发明的精神和原则之内所作的任何修改、 等 同替换和改进等， 均应包含在本发明的保护范围之内。

Claims

1、 一种基于相变磁性材料的非易失性逻辑器件， 其特征在于， 包括磁 头 （106) 以及依次附着于衬底 （101 ) 上的底电极 （102)、 绝缘层 （103 )， 相变磁性薄膜 （104) 和顶电极 （105 );
所述衬底 （101 ) 包括硅衬底 （101A) 以及附着于所述硅衬底 （101A) 上的有源区 （101B );
所述底电极 （102) 包括 N型硅层 （102A)、 P型硅层 （102B ) 和加热 层 （102C); 所述 N型硅层 （102A) 和所述 P型硅层 （102B ) 形成 PN二 极管结构； 加热层 （102C) 的尺寸小于 P型硅层 （102B) 的尺寸；
所述相变磁性材料薄膜 （104) 沉积在所述绝缘层 （103 ) 上并与所述 加热层 （102C) 形成电接触；
所述顶电极 （105 ) 和所述底电极 （102) 均连接至外部的电脉冲信号； 所述非易失性逻辑器件外部还存在一个磁场输入； 所述磁场为与所述相变 磁性薄膜 （104) 的二维平面平行的均匀可变磁场， 所述磁场的强度为 0 ~ 12000 Oe;
所述磁头 （106) 用于检测相变磁性材料的磁状态， 所述磁头 （106) 包括基底 （106A)、 依次附着于所述基底上的第一磁屏蔽层 （106B )、 磁阻 传感器 （106C) 以及第二磁屏蔽层 （106D);
当磁头 （106)检测某个器件的磁状态时， 第一磁屏蔽层 （106B )和第 二磁屏蔽层 （106D) 用于屏蔽周围其他器件单元磁状态对磁头传感器的干 扰， 磁阻传感器 （106C) 用于检测器件中相变磁性材料的剩余磁化强度并 将其转换为读电流输出。
2、 如权利要求 1所述的非易失性逻辑器件， 其特征在于， 所述相变磁 性材料薄膜 （104) 由一种相变材料基质掺杂铁磁性元素构成， 组分表达式 为 Α Β^, 其中 Α为铁磁性元素， B为相变材料， 0<x 30%。
3、 如权利要求 2所述的非易失性逻辑器件， 其特征在于， 所述相变材 料 B为二元、三元或四元硫系化合物系列，包括 Ge-Te、Sb-Te、： Bi-Te、Ge-Sb、 Sn-Te、 Sb-Se、 In-Se、 Ge-Sb-Te, In-Sb-Te、 As-Sb-Te, Sn-Sb-Te、 Ge-Te-Sn, Sb-Se-Bi、 Ga-Te-Se, Ge-Te-Ti, Ge-Te-Sn-O, Ge-Te-Sn-Ag或 Ag-In-Sb-Te 及其混合合金。
4、 如权利要求 2所述的非易失性逻辑器件， 其特征在于， 所述铁磁性 元素 A为 Co、 Fe、 Ni及其合金或 Mn、 Cr以及稀土元素 Gd、 Tb、 Dy、 Ho、 Er禾 B Tm; 包括 FePt、 CoPt、 CoFeB、 TbFeCo、 CoCrPtB, CoCrPtTa。
5、 如权利要求 2或 3所述的非易失性逻辑器件， 其特征在于， 所述相 变磁性材料薄膜 （104 ) 为 Fe,Ge。.98Te、 Fe。O8Ge。.92Te、 Fe。.14Ge。.86Te 或 Fe0.25Ge0.75Te。
6、 一种非易失性逻辑操作方法， 其特征在于， 包括以下歩骤： 通过给非易失性逻辑器件中的顶电极（105 )和有源区 （101B )施加电 脉冲信号， 且给所述非易失性逻辑器件施加磁场； 以电脉冲信号为一个逻 辑输入 Input A， 以磁场为另一个逻辑输入 Input B， 以所述非易失性逻辑器 件中的相变磁性材料的剩余磁感应强度 为逻辑输出 Output, 实现逻辑运 算。
7、 如权利要求 6所述的非易失性逻辑操作方法， 其特征在于， 对于逻 辑输入 Input A,将电脉冲信号 SET定义为逻辑 1， 电脉冲信号 RESET定义 为逻辑 0; 对于逻辑输入 Input B, 将磁场范围为 0 ~ 500 Oe的弱磁场定义 为逻辑 1， 磁场范围为 2500 Oe~ 10000 Oe的强磁场定义为逻辑 0; 对于逻 辑输出 Output, 将范围为 2.5emu/cc ~ 20 emu/cc的较强的磁感应强度 定 义为逻辑输出 0，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义为逻 辑输出 1， 从而实现实质蕴涵逻辑运算。
8、 如权利要求 6所述的非易失性逻辑操作方法， 其特征在于， 对于逻 辑输入 Input A， 将电脉冲信号 SET冲定义为逻辑 0， 电脉冲信号 RESET 定义为逻辑 1 ; 对于逻辑输入 Input B， 将磁场范围为 0 ~ 500 Oe的弱磁场 定义为逻辑 1， 磁场范围为 2500Oe ~ 10000 Oe的强磁场定义为逻辑 0; 对 于逻辑输出 Output, 将范围为 2.5emu/cc ~ 20 emu/cc的较强的磁感应强度 Β>·定义为逻辑输出 0，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义 为逻辑输出 1， 从而实现 "或"布尔逻辑运算。
9、 如权利要求 6所述的非易失性逻辑操作方法， 其特征在于， 对于逻 辑输入 Input Α,将电脉冲信号 SET定义为逻辑 0， 电脉冲信号 RESET定义 为逻辑 1 ; 对于逻辑输入 Input B， 将磁场范围为 0 ~ 500 Oe的弱磁场为逻 辑 1， 磁场范围为 2500 Oe ~ 10000 Oe的强磁场为逻辑 0; 对于逻辑输出 Output，将范围为 2.5 emu/cc~ 20 emu/cc的较强的磁感应强度 定义为逻辑 输出 1，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义为逻辑输出 0， 从而实现 "或非"布尔逻辑运算。
10、 如权利要求 6所述的非易失性逻辑操作方法， 其特征在于， 对于 逻辑输入 Input A， 将电脉冲信号 SET定义为逻辑 1， 电脉冲信号 RESET 定义为逻辑 0; 对于逻辑输入 Input B， 将磁场范围为 0 ~ 500 Oe的弱磁场 为逻辑 0， 磁场范围为 2500Oe ~ 10000 Oe的强磁场为逻辑 1 ; 对于逻辑输 出 Output, 将范围为 2.5 emu/cc~ 20 emu/cc的较强的磁感应强度 Br定义为 逻辑输出 1，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义为逻辑输 出 0， 从而实现 "与"布尔逻辑运算。
11、 如权利要求 6所述的非易失性逻辑操作方法， 其特征在于， 对于 逻辑输入 Input A， 将电脉冲信号 SET定义为逻辑 1， 电脉冲信号 RESET 定义为逻辑 0; 对于逻辑输入 Input B， 将磁场范围为 0 ~ 500 Oe的弱磁场 为逻辑 0， 磁场范围为 2500 Oe~ 10000 Oe的强磁场为逻辑 1 ; 对于逻辑输 出 Output，将范围为 2.5emu/cc~ 20 emu/cc的较强的磁感应强度 定义为逻 辑输出 0，将范围为 0 ~ 1 emu/cc的较微弱的磁感应强度 Β>·定义为逻辑输出 1， 从而实现 "与非"布尔逻辑运算。
12、 一种逻辑运算结果的读取和擦除方法， 其特征在于， 包括下述步 骤：
将逻辑运算结果存储在相变磁性材料的非易失性剩磁状态中； 通过磁头检测器件中相变磁性材料的剩余磁化强度并转换成一个读电 流输出， 实现信息的读取；
通过施加一个反向矫顽磁场 -He或者施加一个 RESET脉冲将相变磁性材料 非晶化， 实现存储信息的擦除。
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