WO2015098835A1 - 半導体パッケージの製造方法 - Google Patents

半導体パッケージの製造方法 Download PDF

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Publication number
WO2015098835A1
WO2015098835A1 PCT/JP2014/083906 JP2014083906W WO2015098835A1 WO 2015098835 A1 WO2015098835 A1 WO 2015098835A1 JP 2014083906 W JP2014083906 W JP 2014083906W WO 2015098835 A1 WO2015098835 A1 WO 2015098835A1
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Prior art keywords
cured
temporary fixing
resin
fixing material
resin sheet
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PCT/JP2014/083906
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English (en)
French (fr)
Japanese (ja)
Inventor
浩介 盛田
石坂　剛
石井　淳
豪士 志賀
智絵 飯野
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日東電工株式会社
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Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to US15/107,222 priority Critical patent/US20170125373A1/en
Publication of WO2015098835A1 publication Critical patent/WO2015098835A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Definitions

  • the present invention relates to a method for manufacturing a semiconductor package.
  • thermosetting resin sheet When sealing a semiconductor chip, a thermosetting resin sheet may be used (for example, refer to Patent Document 1).
  • a cured resin body is formed by forming a sealing resin body by covering a semiconductor chip temporarily fixed on a temporary fixing material with a sealing resin, and curing a resin portion of the sealing resin body.
  • a rewiring layer may be formed on the cured resin body.
  • a photosensitive buffer coat film is formed on the cured resin body, and then an opening is formed in the buffer coat film by photolithography.
  • the present invention relates to a support plate, a temporary fixing material laminated on the support plate, a chip temporary fixing body including a semiconductor chip temporarily fixed on the temporary fixing material, and heat disposed on the chip temporary fixing body. Pressurizing the curable resin sheet to form a sealing body including the semiconductor chip and the thermosetting resin sheet covering the semiconductor chip, and heating the sealing body to heat the thermosetting resin sheet A step of forming a cured body comprising the semiconductor chip and a cured resin covering the semiconductor chip, a step of peeling the temporary fixing material from the cured body, and a contact with the temporary fixing material of the cured body.
  • the present invention relates to a method for manufacturing a semiconductor package including a step of forming a rewiring layer on a surface that has been formed and forming a rewiring body.
  • the step of forming the rewiring body includes a step of forming a photosensitive buffer coat film on a surface of the cured body that has been in contact with the temporary fixing material, and an opening is formed in the buffer coat film by exposure and development. Including the step of.
  • the surface roughness of the cured resin is 3000 nm or less on the surface of the cured body that contacts the temporary fixing material.
  • the buffer coating film is exposed on the film formation planned surface when irradiated with exposure light. Diffuse reflection of exposure light is suppressed. Accordingly, it is possible to prevent the periphery of the exposed portion of the buffer coat film from being exposed to light, and a highly accurate opening can be formed.
  • the sealing body In the step of forming the sealing body, it is preferable to pressurize at 1.0 MPa or more. Thereby, the surface roughness of the film formation plan surface of a hardening body can be made small.
  • the semiconductor package manufacturing method of the present invention further includes, for example, a step of obtaining the semiconductor package by dividing the rewiring body into pieces.
  • the step of forming the rewiring body further includes, for example, a step of irradiating the cured resin with a laser through the opening to form a through hole penetrating the cured body in the thickness direction.
  • FIG. 6 is a process cross-sectional view for explaining the gist of the method of the first embodiment.
  • FIG. 6 is a process cross-sectional view for explaining the gist of the method of the first embodiment.
  • FIG. 6 is a process cross-sectional view for explaining the gist of the method of the first embodiment.
  • FIG. 6 is a process cross-sectional view for explaining the gist of the method of the first embodiment.
  • FIG. 6 is a process cross-sectional view for explaining the gist of the method of the first embodiment.
  • a fan-out type wafer level package (WLP) can be manufactured.
  • the manufacturing method of the semiconductor package of Embodiment 1 includes a support plate 11a, a temporary fixing material 11b stacked on the support plate 11a, and a semiconductor chip 14 temporarily fixed on the temporary fixing material 11b.
  • a chip temporary fixing body 11 provided with a semiconductor chip 14 and a sealing body including a thermosetting resin sheet 12 covering the semiconductor chip 14 by pressurizing the thermosetting resin sheet 12 disposed on the chip temporary fixing body 11.
  • the step of forming the rewiring body 53 includes a step of forming a photosensitive buffer coat film 61 on the surface of the cured body 52 that is in contact with the temporarily fixing material 11b, Forming an opening 61B in the buffer coat film 61 by development.
  • the surface roughness of the cured resin 21 is 3000 nm or less, preferably 2500 nm or less, more preferably 2000 nm or less on the surface 52A (hereinafter also referred to as a film formation scheduled surface) 52A of the cured body 52 that is in contact with the temporarily fixing material 11b. .
  • the minimum of surface roughness is not specifically limited, For example, it is 1 nm.
  • the surface roughness of the cured resin 21 can be measured by the method described in the examples.
  • the surface roughness of the curable resin 21 is the pressure at which the chip temporary fixing body 11 and the thermosetting resin sheet 12 are pressurized, the heating temperature at which the thermosetting resin sheet 12 is cured, and the thermosetting resin sheet 12. It can be controlled by the shape of the inorganic filler, the amount of the inorganic filler in the thermosetting resin sheet 12, and the like. Especially, the pressure at the time of pressurizing the chip
  • the surface roughness of the cured resin 21 can be made small.
  • the laminate 1 includes a chip temporary fixing body 11, a thermosetting resin sheet 12 disposed on the chip temporary fixing body 11, and a separator 13 disposed on the thermosetting resin sheet 12. .
  • the laminate 1 is disposed between the lower heating plate 41 and the upper heating plate 42.
  • the chip temporary fixing body 11 includes a support plate 11a, a temporary fixing material 11b stacked on the support plate 11a, and a semiconductor chip 14 temporarily fixed on the temporary fixing material 11b.
  • the material of the support plate 11a is not particularly limited, and examples thereof include metal materials such as SUS, and plastic materials such as polyimide, polyamideimide, polyetheretherketone, and polyethersulfone.
  • the temporary fixing material 11b is not particularly limited, but a heat-foaming pressure-sensitive adhesive is used because it can be easily peeled off. A conventionally well-known thing can be used as a heat-foamable adhesive.
  • the semiconductor chip 14 includes a circuit formation surface on which electrode pads 14a are formed.
  • the circuit forming surface of the semiconductor chip 14 is in contact with the temporary fixing material 11b.
  • thermosetting resin sheet 12 will be described in detail later.
  • the separator 13 a polyethylene terephthalate (PET) film or the like can be suitably used. In order to easily peel the thermosetting resin sheet 12, it is preferable that the separator 13 is subjected to a release treatment.
  • PET polyethylene terephthalate
  • the laminated body 1 is hot-pressed by a parallel plate method using the lower side heating plate 41 and the upper side heating plate 42, and the sealing body 51 is formed.
  • the temperature of the hot press is preferably 70 ° C or higher, more preferably 80 ° C or higher. Thereby, the sealing body 51 can be formed easily.
  • the temperature of the hot press is preferably 170 ° C. or lower, more preferably 150 ° C. or lower, further preferably 110 ° C. or lower, still more preferably 100 ° C. or lower, and particularly preferably 95 ° C. or lower.
  • the curvature of a molded product can be suppressed as it is 170 degrees C or less.
  • the pressure for hot pressing the laminate 1 is preferably 1.0 MPa or more, more preferably 1.5 MPa or more.
  • the surface roughness of the surface which contacts the temporarily fixed material 11b of the sealing body 51 as it is 1.0 Mpa or more can be made small. As a result, the surface roughness of the film formation planned surface 52A of the cured body 52 can be reduced.
  • the pressure for hot pressing the laminate 1 is preferably 10 MPa or less, more preferably 8 MPa or less.
  • the time for hot pressing is preferably 0.3 minutes or more, more preferably 0.5 minutes or more, and even more preferably 2 minutes or more.
  • the time for hot pressing is preferably 60 minutes or less, more preferably 40 minutes or less, still more preferably 10 minutes or less, and particularly preferably 5 minutes or less.
  • Hot pressing is preferably performed in a reduced pressure atmosphere.
  • voids can be reduced and irregularities can be filled well.
  • the pressure is, for example, 0.1 to 5 kPa, preferably 0.1 to 100 Pa.
  • the sealing body 51 obtained by hot pressing the laminated body 1 includes the semiconductor chip 14 and the thermosetting resin sheet 12 covering the semiconductor chip 14.
  • the sealing body 51 is in contact with the temporary fixing material 11 b and the separator 13.
  • the separator 13 is peeled from the sealing body 51.
  • the sealing body 51 is heated at a temperature lower than the foaming start temperature of the temporary fixing material 11b, and the thermosetting resin sheet 12 is cured to form the cured body 52.
  • the thermosetting resin sheet 12 is cured by heating at a temperature 20 ° C. or more lower than the foaming start temperature of the temporary fixing material 11b. Thereby, it is possible to prevent the temporary fixing material 11b from foaming before the thermosetting resin sheet 12 is cured, and to reduce the surface roughness of the film formation scheduled surface 52A.
  • the heating temperature is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, further preferably 130 ° C. or higher, and particularly preferably 140 ° C. or higher.
  • the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower, and further preferably 170 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less, and still more preferably 90 minutes or less.
  • the pressure is preferably 0.1 MPa or more, more preferably 0.5 MPa or more.
  • the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
  • the cured body 52 includes a semiconductor chip 14 and a cured resin 21 that covers the semiconductor chip 14.
  • the temporary fixing material 11 b is heated to foam the temporary fixing material 11 b, and then the temporary fixing material 11 b is peeled from the cured body 52. As a result, the film formation scheduled surface 52A of the cured body 52 is exposed.
  • the temperature for heating the temporarily fixing material 11b is preferably 175 ° C. or higher, more preferably 180 ° C. or higher. When the temperature is 175 ° C. or higher, the temporary fixing material 11b can be foamed satisfactorily, and the adhesive strength of the temporary fixing material 11b can be reduced.
  • the upper limit of the temperature for heating the temporarily fixing material 11b is, for example, 200 ° C.
  • the surface of the cured body 52 opposite to the film formation scheduled surface 52A may be ground.
  • the grinding thickness is arbitrary, for example, by grinding to expose the back surface of the semiconductor chip 14, the warp of the cured body 52 can be significantly reduced.
  • the grinding method include a grinding method using a grindstone that rotates at high speed.
  • a buffer coat film 61 is formed on the film formation planned surface 52A of the cured body 52.
  • the buffer coat film 61 photosensitive polyimide, photosensitive polybenzoxazole (PBO), or the like can be used.
  • the method for forming the buffer coat film 61 include a spin coating method, a die coating method, and a method of laminating a dry film.
  • a mask 62 is disposed on the buffer coat film 61.
  • exposure light is irradiated from a light source 91 disposed above the buffer coat film 61 to expose the buffer coat film 61.
  • openings 61A and openings 61B are formed in the buffer coat film 61 by development to expose predetermined portions of the cured resin 21 and the electrode pads 14a.
  • the through hole 71 is formed by irradiating the cured resin 21 with a laser from above the cured body 52 through the opening 61 ⁇ / b> B.
  • the through hole 71 penetrates the cured body 52 in the thickness direction.
  • the through hole 71 is filled with metal to form the through electrode 72.
  • the through electrode 72 penetrates the cured body 52 in the thickness direction.
  • the metal to be filled include Cu, Ag, Au, Sn, and eutectic solder.
  • eutectic solder for example, Sn—Ag eutectic solder, Sn—Ag—Cu eutectic solder, or the like can be used.
  • a seed layer is formed on the buffer coat film 61, the electrode pad 14 a and the through electrode 72.
  • a resist 63 is formed on the seed layer.
  • a plating pattern 64 is formed on the seed layer by a plating method such as electrolytic copper plating.
  • the seed layer is etched to complete the rewiring 65 and the rewiring 75.
  • a protective film 66 is formed on the rewiring 65 and the rewiring 75.
  • the protective film 66 photosensitive polyimide, photosensitive polybenzoxazole (PBO), or the like can be used.
  • an opening is formed in the protective film 66 to expose the rewiring 65 and the rewiring 75 below the protective film 66.
  • the rewiring layer 69 including the rewiring 65 and the rewiring 75 is completed on the cured body 52, and the rewiring body 53 including the cured body 52 and the rewiring layer 69 formed on the cured body 52 is obtained. .
  • an electrode (UBM: Under Bump Metal) 67 is formed on the exposed rewiring 65.
  • an electrode 77 is formed on the rewiring 75.
  • bumps 68 are formed on the electrodes 67. As shown in FIG. The pump 68 is electrically connected to the electrode pad 14 a via the electrode 67 and the rewiring 65. A bump 78 is formed on the electrode 77. The pump 78 is electrically connected to the through electrode 72 via the electrode 77 and the rewiring 75.
  • the rewiring body 53 is separated into pieces (dicing) to obtain a semiconductor package 54.
  • the semiconductor package 54 in which the wiring is drawn outside the chip area can be obtained.
  • thermosetting resin sheet 12 The thermosetting resin sheet 12 will be described.
  • thermosetting resin sheet 12 a sheet that cures at a temperature lower than the foaming start temperature of the temporary fixing material 11b is used.
  • the thermosetting resin sheet 12 preferably contains a thermosetting resin such as an epoxy resin or a phenol resin.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy resin is solid at room temperature having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C.
  • the epoxy resin is solid at room temperature having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable from the viewpoint of reliability.
  • bisphenol F type epoxy resin is preferable.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • the phenol resin it is preferable to use one having a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C. from the viewpoint of reactivity with the epoxy resin. From the viewpoint of high curing reactivity, a phenol novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the total content of epoxy resin and phenol resin in the thermosetting resin sheet 12 is preferably 5% by weight or more. When it is 5% by weight or more, good adhesion to the semiconductor chip 14 or the like can be obtained.
  • the total content of the epoxy resin and the phenol resin in the thermosetting resin sheet 12 is preferably 40% by weight or less, and more preferably 20% by weight or less. If it is 40% by weight or less, the hygroscopicity can be kept low.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • thermosetting resin sheet 12 preferably contains a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin.
  • 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z) ), 2-heptadecylimidazole (trade name; C17Z), 1,2-dimethylimidazole (trade name; 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (product) Name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1-cyanoethyl 2-Undecylimidazole (trade name; C11Z-CN),
  • imidazole-based curing accelerators are preferable because the curing reaction at the kneading temperature can be suppressed, and 2-phenyl-4,5-dihydroxymethylimidazole, 2,4-diamino-6- [2′-ethyl-4 '-Methylimidazolyl- (1')]-ethyl-s-triazine is more preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred.
  • the content of the curing accelerator is preferably 0.2 parts by weight or more, more preferably 0.5 parts by weight or more, further preferably 0.8 parts by weight or more with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin. It is.
  • the content of the curing accelerator is preferably 5 parts by weight or less, more preferably 2 parts by weight or less with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • the thermosetting resin sheet 12 may include a thermoplastic resin (elastomer).
  • Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
  • MBS resin methyl methacrylate-butadiene-styrene copolymer
  • the content of the thermoplastic resin in the thermosetting resin sheet 12 is preferably 1% by weight or more. A softness
  • the content of the thermoplastic resin in the thermosetting resin sheet 12 is preferably 30% by weight or less, more preferably 10% by weight or less, and further preferably 5% by weight or less. Adhesive strength with respect to the semiconductor chip 14 or the like can be obtained satisfactorily when it is 30% by weight or less.
  • thermosetting resin sheet 12 preferably contains an inorganic filler. By blending the inorganic filler, the thermal expansion coefficient ⁇ can be reduced.
  • the inorganic filler examples include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride.
  • silica and alumina are preferable and silica is more preferable because the thermal expansion coefficient can be satisfactorily reduced.
  • Silica is preferably fused silica and more preferably spherical fused silica because it is excellent in fluidity.
  • the average particle diameter of the inorganic filler is preferably 1 ⁇ m or more, more preferably 5 ⁇ m or more. When it is 1 ⁇ m or more, it is easy to obtain flexibility and flexibility of the thermosetting resin sheet 12.
  • the average particle diameter of the inorganic filler is preferably 50 ⁇ m or less, more preferably 30 ⁇ m or less. When it is 50 ⁇ m or less, it is easy to increase the filling rate of the inorganic filler.
  • the average particle size can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the inorganic filler is preferably treated (pretreated) with a silane coupling agent. Thereby, the wettability with resin can be improved and the dispersibility of an inorganic filler can be improved.
  • the silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.
  • hydrolyzable group examples include an alkoxy group having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an acetoxy group, and a 2-methoxyethoxy group.
  • a methoxy group is preferable because it easily removes volatile components such as alcohol generated by hydrolysis.
  • organic functional group examples include vinyl group, epoxy group, styryl group, methacryl group, acrylic group, amino group, ureido group, mercapto group, sulfide group, and isocyanate group.
  • an epoxy group is preferable because it easily reacts with an epoxy resin or a phenol resin.
  • silane coupling agent examples include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane; p-styryltrimethoxysilane, etc.
  • vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane
  • 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyl
  • Styryl group-containing silane coupling agent 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltri Methacrylic group-containing silane coupling agents such as toxisilane; Acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane; N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N Amino group-containing silane coupling agents such as phenyl-3-a
  • the method for treating the inorganic filler with the silane coupling agent is not particularly limited, and is a wet method in which the inorganic filler and the silane coupling agent are mixed in a solvent, and the inorganic filler and the silane coupling agent are treated in a gas phase. And dry method.
  • the treatment amount of the silane coupling agent is not particularly limited, but it is preferable to treat 0.1 to 1 part by weight of the silane coupling agent with respect to 100 parts by weight of the untreated inorganic filler.
  • the content of the inorganic filler in the thermosetting resin sheet 12 is preferably 20% by volume or more, more preferably 70% by volume or more, and further preferably 74% by volume or more.
  • the content of the inorganic filler is preferably 90% by volume or less, and more preferably 85% by volume or less. When it is 90% by volume or less, good unevenness followability can be obtained.
  • the content of the inorganic filler can be explained by using “wt%” as a unit. Typically, the content of silica will be described in units of “% by weight”. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of silica content (% by weight) is, for example, as follows. That is, the content of silica in the thermosetting resin sheet 12 is preferably 81% by weight or more, and more preferably 84% by weight or more. The content of silica in the thermosetting resin sheet 12 is preferably 94% by weight or less, and more preferably 91% by weight or less.
  • the preferred range of the alumina content is, for example, as follows. That is, the content of alumina in the thermosetting resin sheet 12 is preferably 88% by weight or more, and more preferably 90% by weight or more. The content of alumina in the thermosetting resin sheet 12 is preferably 97% by weight or less, and more preferably 95% by weight or less.
  • thermosetting resin sheet 12 may appropriately contain, in addition to the above components, a compounding agent generally used in the production of a sealing resin, for example, a flame retardant component, a pigment, a silane coupling agent, and the like.
  • a compounding agent generally used in the production of a sealing resin for example, a flame retardant component, a pigment, a silane coupling agent, and the like.
  • the flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxide, phosphazene compounds, and the like can be used. Of these, phosphazene compounds are preferred because they are excellent in flame retardancy and strength after curing.
  • the pigment is not particularly limited, and examples thereof include carbon black.
  • thermosetting resin sheet 12 is not particularly limited, the kneaded material obtained by kneading the respective components (for example, epoxy resin, phenol resin, inorganic filler, curing accelerator, etc.) is plastically processed into a sheet shape. Is preferred. Thereby, the inorganic filler can be highly filled and the thermal expansion coefficient can be designed low.
  • the respective components for example, epoxy resin, phenol resin, inorganic filler, curing accelerator, etc.
  • a kneaded material was prepared by melting and kneading an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and the like with a known kneader such as a mixing roll, a pressure kneader, and an extruder.
  • the kneaded product is plastically processed into a sheet.
  • the upper limit of the temperature is preferably 140 ° C. or less, and more preferably 130 ° C. or less.
  • the lower limit of the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 ° C or higher, and preferably 50 ° C or higher.
  • the kneading time is preferably 1 to 30 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere), and the pressure under reduced pressure conditions is, for example, 1 ⁇ 10 ⁇ 4 to 0.1 kg / cm 2 .
  • the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • thermosetting resin sheet 12 it is also preferable to manufacture the thermosetting resin sheet 12 by a coating method.
  • a coating method For example, an adhesive composition solution containing each of the components described above is prepared, and the adhesive composition solution is applied on a base separator to a predetermined thickness to form a coating film, and then the coating film is dried.
  • the thermosetting resin sheet 12 can be manufactured.
  • the solvent used in the adhesive composition solution is not particularly limited, but an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferable.
  • organic solvent capable of uniformly dissolving, kneading or dispersing the above components.
  • examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like.
  • polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper surface-coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used.
  • a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent
  • Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating.
  • the drying conditions for the coating film are not particularly limited, and for example, the drying can be performed at a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes.
  • the thickness of the thermosetting resin sheet 12 is not particularly limited, but is preferably 100 ⁇ m or more, more preferably 150 ⁇ m or more.
  • the thickness of the thermosetting resin sheet 12 is preferably 2000 ⁇ m or less, more preferably 1000 ⁇ m or less. Within the above range, the semiconductor chip 14 can be satisfactorily sealed.
  • Embodiment 2 In Embodiment 1, the laminated body 1 is hot-pressed by a parallel plate method to form the sealing body 51, and then the sealing body 51 is heated to form the cured body 52. In the second embodiment, the cured body 52 is formed by pressure molding (compression molding) using a mold.
  • the cured body 52 is formed by pressurizing the laminate 1 with heating using a molding apparatus.
  • the sealing body 51 is formed before the cured body 52 is formed.
  • a suitable pressure for pressurizing the laminate 1 by compression molding that is, a suitable clamping pressure, is the same as the preferred range of the hot press pressure in the first embodiment.
  • the temperature at which the laminate 1 is pressed is not particularly limited as long as the thermosetting resin sheet 12 is cured.
  • the temperature at which the laminate 1 is pressurized is preferably 100 ° C. or higher, more preferably 130 ° C. or higher, and still more preferably 140 ° C. or higher.
  • the cured body 52 can be formed by increasing the temperature at which the laminate 1 is pressurized.
  • the temperature at which the laminate 1 is pressurized is preferably 170 ° C. or lower, more preferably 160 ° C. or lower, and more preferably 150 ° C. or lower.
  • the curvature of a molded product can be suppressed as it is 170 degrees C or less.
  • the suitable pressurizing time for pressurizing the laminate 1 is the same as the preferred range of the hot press time of the first embodiment.
  • the cured body 52 may be further heated to further cure the cured resin 21 of the cured body 52. That is, you may perform the post-curing process generally called PMC.
  • the temperature at which the cured body 52 is heated is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, still more preferably 130 ° C. or higher, and particularly preferably 140 ° C. or higher.
  • the temperature at which the cured body 52 is heated is preferably 200 ° C. or lower, more preferably 180 ° C. or lower, and even more preferably 170 ° C. or lower.
  • the heating time for heating the cured body 52 is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less, and still more preferably 90 minutes or less.
  • the temporary fixing material 11 b is heated to foam the temporary fixing material 11 b, and then the temporary fixing material 11 b is peeled from the cured body 52. As a result, the film formation scheduled surface 52A of the cured body 52 is exposed.
  • the temperature for heating the temporarily fixing material 11b is preferably 175 ° C. or higher, more preferably 180 ° C. or higher. When the temperature is 175 ° C. or higher, the temporary fixing material 11b can be foamed satisfactorily, and the adhesive strength of the temporary fixing material 11b can be reduced.
  • the upper limit of the temperature for heating the temporarily fixing material 11b is, for example, 200 ° C.
  • the step of peeling the temporary fixing material 11b from the cured body 52 may be performed before the post-curing step.
  • Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
  • Phenol resin MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol novolac resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq.
  • Curing accelerator 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Elastomer SIBSTAR 072T (styrene-isobutylene-styrene triblock copolymer) manufactured by Kaneka Corporation
  • Inorganic filler FB-9454 manufactured by Denki Kagaku Kogyo Co., Ltd. (spherical fused silica powder, average particle size 20 ⁇ m)
  • Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd. Carbon black: # 20 manufactured by Mitsubishi Chemical
  • Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
  • Phenol resin MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol novolac resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq.
  • Curing accelerator 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Elastomer SIBSTAR 072T (styrene-isobutylene-styrene triblock copolymer) manufactured by Kaneka Corporation
  • Inorganic filler Crystallite 3K-S (crushed silica powder, average particle size 35 ⁇ m) manufactured by Denki Kagaku Kogyo Co., Ltd.
  • Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd. Carbon black: # 20 manufactured by Mitsubishi Chemical
  • Epoxy resin KI-3000 (ortho-cresol novolac type epoxy resin, Epokin equivalent 200 g / eq.) Manufactured by Toto Kasei Co., Ltd.
  • Epoxy resin Epicoat 828 (bisphenol A type epoxy resin, epoxy equivalent 200 g / eq.) Manufactured by Mitsubishi Chemical Corporation
  • Phenol resin MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol novolac resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq.
  • Examples 1 to 3 and Comparative Examples 1 to 2 A temporarily fixed adhesive sheet (Nitto Denko No. 3195V) was laminated on a 300 mm ⁇ 400 mm ⁇ 1.4 mm thick glass plate (Tempax glass). Next, a plurality of semiconductor elements having a size of 6 mm ⁇ 6 mm ⁇ thickness 200 ⁇ m were arranged on the temporarily fixed adhesive sheet so as to be spaced by 9 mm. Subsequently, the resin sheet was selected according to Table 2, and the resin sheet was arrange
  • the laminate was pressed in a parallel plate system under the conditions shown in Table 2 to form a sealing body with a temporarily fixed adhesive sheet and a separator. Then, the separator was peeled from the sealing body.
  • the sealing body with a temporarily fixed adhesive sheet was heated on the conditions shown in Table 2, and the resin part of the sealing body was hardened, and the cured body with a temporarily fixed adhesive sheet was obtained.
  • the cured body with the temporarily fixed adhesive sheet was heated at 185 ° C. for 5 minutes, and then the temporarily fixed adhesive sheet was peeled off from the cured body.
  • Example 5 A temporarily fixed adhesive sheet (Nitto Denko No. 3195V) was laminated on a 300 mm ⁇ 300 mm ⁇ 1.1 mm thick glass plate (Tempax glass). Next, a plurality of semiconductor elements having a size of 6 mm ⁇ 6 mm ⁇ thickness 200 ⁇ m were arranged on the temporarily fixed adhesive sheet so as to be spaced by 9 mm. Subsequently, the resin sheet was selected according to Table 2, and the resin sheet was arrange
  • the laminate was subjected to pressure and heat molding under the conditions shown in Table 2 to form a sealing body with a temporarily fixed adhesive sheet and a separator. Then, the separator was peeled from the sealing body.
  • the sealing body with a temporarily fixed adhesive sheet was heated on the conditions shown in Table 2, and the resin part of the sealing body was hardened, and the cured body with a temporarily fixed adhesive sheet was obtained.
  • the cured body with the temporarily fixed adhesive sheet was heated at 185 ° C. for 5 minutes, and then the temporarily fixed adhesive sheet was peeled off from the cured body.

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
PCT/JP2014/083906 2013-12-26 2014-12-22 半導体パッケージの製造方法 WO2015098835A1 (ja)

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EP3940764A4 (en) * 2019-03-14 2022-12-14 Mitsui Chemicals Tohcello, Inc. ELECTRONIC DEVICE MANUFACTURING METHOD
WO2020184199A1 (ja) * 2019-03-14 2020-09-17 三井化学東セロ株式会社 電子装置の製造方法
US11139179B2 (en) * 2019-09-09 2021-10-05 Advanced Semiconductor Engineering, Inc. Embedded component package structure and manufacturing method thereof
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JP2010219489A (ja) * 2009-02-20 2010-09-30 Toshiba Corp 半導体装置およびその製造方法
US20130234322A1 (en) * 2012-03-08 2013-09-12 Stats Chippac, Ltd. Thin 3D Fan-Out Embedded Wafer Level Package (EWLB) for Application Processor and Memory Integration
JP2013251369A (ja) * 2012-05-31 2013-12-12 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置

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JP2010219489A (ja) * 2009-02-20 2010-09-30 Toshiba Corp 半導体装置およびその製造方法
US20130234322A1 (en) * 2012-03-08 2013-09-12 Stats Chippac, Ltd. Thin 3D Fan-Out Embedded Wafer Level Package (EWLB) for Application Processor and Memory Integration
JP2013251369A (ja) * 2012-05-31 2013-12-12 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置

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