WO2015096296A1 - 显示装置及其制作方法 - Google Patents

显示装置及其制作方法 Download PDF

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Publication number
WO2015096296A1
WO2015096296A1 PCT/CN2014/075058 CN2014075058W WO2015096296A1 WO 2015096296 A1 WO2015096296 A1 WO 2015096296A1 CN 2014075058 W CN2014075058 W CN 2014075058W WO 2015096296 A1 WO2015096296 A1 WO 2015096296A1
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WO
WIPO (PCT)
Prior art keywords
layer
array substrate
display device
color filter
indium tin
Prior art date
Application number
PCT/CN2014/075058
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English (en)
French (fr)
Inventor
熊源
Original Assignee
深圳市华星光电技术有限公司
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Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US14/777,166 priority Critical patent/US9853061B2/en
Publication of WO2015096296A1 publication Critical patent/WO2015096296A1/zh
Priority to US15/803,743 priority patent/US10236307B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/16—Materials and properties conductive

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display device and a method of fabricating the same. Background technique
  • the display device of the prior art includes a Array substrate 10 and a color filter (CF) substrate 20 disposed opposite to each other with gold beads 40 interposed therebetween, and the array substrate 10 has a connector thereon (Connector) 30, with conductive adhesive around (not shown).
  • the array substrate 10 and the color filter substrate 20 are electrically connected to each other by a combination of the connector 30 and a conductive paste.
  • the design of the conductive structure requires high dispensing precision, so the yield is low and the generation cost is high; and the connector 30 has a large size, which is not suitable for the design of the narrow frame of the display device, and cannot meet the aesthetic requirements of the user. . Summary of the invention
  • a primary object of the present invention is to provide a display device and a method of fabricating the same, which are directed to improving a conductive structure and reducing a production cost.
  • the present invention provides a display device including an array substrate and a color filter substrate disposed opposite to the array substrate, wherein the surface of the array substrate has a pad layer and a conductive layer, The pad layer is raised to the conductive layer to the conductive layer to be in contact with the color filter substrate, so that the conductive layer is turned on the array substrate and the color filter substrate;
  • the color resist layer is at least two layers.
  • the conductive layer is a metal layer or an indium tin oxide layer.
  • the present invention also provides a display device of the same inventive concept, comprising: an array substrate and a color filter substrate disposed opposite to the array substrate, the array substrate surface having a liner layer and a conduction layer, the liner layer pad
  • the conductive layer is in contact with the conductive layer to the color filter substrate such that the conductive layer conducts the array substrate and the color filter substrate.
  • the conductive layer is a metal layer or an indium tin oxide layer.
  • the conductive layer is an indium tin oxide layer
  • the surface of the array substrate further has a metal layer connected to a common electrode of the array substrate, and the indium tin oxide layer is indirectly connected by connecting the metal layer. Said common electrode.
  • the conductive layer is a second metal layer
  • the surface of the array substrate further has a first metal layer connected to the common electrode of the array substrate and an indium tin oxide layer connected to the first metal layer.
  • the second metal layer indirectly connects the common electrode by connecting the indium tin oxide layer.
  • the surface of the color filter substrate has an indium tin oxide layer connected to a common electrode of the color filter substrate, and the conductive layer is in contact with an indium tin oxide layer of the color filter substrate.
  • the common electrode of the color filter substrate is indirectly connected.
  • the conductive layer is directly connected to a common electrode of the array substrate or/and a common electrode of the color filter substrate.
  • the liner layer is a color resist layer, a black matrix layer or a column spacer layer.
  • the pad layer is a color resist layer, and the color resist layer is at least two layers.
  • the invention also provides a method for manufacturing a display device, comprising the steps of:
  • the conductive layer Forming a conductive layer on the array substrate, the conductive layer partially covering the surface of the liner layer; and abutting the color filter substrate with a portion of the conductive layer covering the surface of the liner layer to The conductive layer conducts the array substrate and the color filter substrate.
  • the pad layer is a color resist layer, and the color resist layer is at least two layers.
  • the conductive layer is a metal layer or an indium tin oxide layer.
  • the forming the conductive layer on the array substrate comprises:
  • An indium tin oxide layer is formed substantially as a conduction layer in the array, and the indium tin oxide layer partially covers the surface of the liner layer and is directly connected to the common electrode of the array substrate.
  • the forming the conductive layer on the array substrate comprises:
  • a second metal layer is formed substantially as a conduction layer in the array, and the second metal layer partially covers the surface of the liner layer and is directly connected to the common electrode of the array substrate.
  • a display device provided by the present invention makes full use of a metal layer or an indium tin oxide layer in a process of an array substrate as a conductive layer, and uses a pad layer to pad the conductive layer to contact the color filter substrate.
  • the conductive layer is made to conduct the common electrodes of the array substrate and the color filter substrate.
  • the conductive structure of the invention saves the material cost, reduces the processing difficulty, improves the yield rate, and finally greatly reduces the generation cost. At the same time, it can also be applied to the design of the narrow frame of the display device to meet the aesthetic needs of users.
  • FIG. 1 is a schematic view showing a conductive structure of a display device of the prior art
  • FIG. 2 is a schematic structural view of a first embodiment of a display device of the present invention.
  • FIG. 3 is a schematic structural view of a first embodiment of a display device of the present invention.
  • FIG. 4 is a flow chart showing an embodiment of a method of fabricating a display device of the present invention.
  • the combination of the color resist layer and the conductive layer is used in place of the connector and the conductive adhesive to realize conduction between the array substrate and the color filter substrate.
  • the conductive layer may be a metal layer or an indium tin oxide layer (ITO) in the process of the array substrate, and the liner layer may be a color filter (CF) layer, a black matrix (BM) layer, or a columnar shape.
  • a spacer Photo Spacer, PS, also called a support column
  • PS Photo Spacer
  • an indium tin oxide layer is used as a conductive layer.
  • the display device includes an array substrate 100 and a color filter substrate 200 disposed opposite the array substrate 100.
  • the surface of the color filter substrate 200 has an indium tin oxide layer 12, the indium tin oxide layer 12 and the color filter.
  • the common electrode of the substrate 200 is connected; the first metal layer M1, the second metal layer M2, the color resist layer 110 and the indium tin oxide layer II are sequentially formed from the bottom to the top of the array substrate 100, and a protective layer is further disposed between the layers. Passivation layer, etc.
  • a portion of the indium tin oxide layer II covers the surface of the liner layer 110 such that the liner 110 layer is elevated from the indium tin oxide layer II to the indium tin oxide layer II and the indium tin oxide layer 12 of the color filter substrate 200.
  • the other portion (right side) is connected to the first metal layer M1 and the second metal layer M2, respectively.
  • Indium tin oxide layer II can be directly connected to the common of the array substrate 100 Or the first metal layer M1 is connected to the common electrode of the array substrate 100, the indium tin oxide layer II is indirectly connected to the common electrode of the array substrate 100 by connecting the first metal layer M1; or the common of the second metal layer M2 and the array substrate 100 The electrode is connected, and the indium tin oxide layer II is indirectly connected to the common electrode of the array substrate 100 by connecting the second metal layer M2. Therefore, the indium tin oxide layer II serves as a conduction layer, and one end is in contact with the indium tin oxide layer 12 of the color filter substrate 200 to indirectly connect the common electrode of the color filter substrate 200, and the other end is directly or indirectly connected to the array substrate 100.
  • the common electrode connection achieves the purpose of conducting the array substrate 100 and the color filter substrate 200.
  • the lining layer 110 may be a photoresist layer, a black matrix layer, a pillar spacer layer, or the like.
  • the color resist layer is more stable and flat.
  • the color resist layer is preferred in this embodiment. It may be one layer, two layers or multiple layers, preferably 2 to 3 layers, and the color of each layer may be the same or different, and is not limited herein; the stacking manner and the stacking shape of the color resist layer are different, and are not limited herein.
  • the indium tin oxide layer II as a conduction layer may also be directly connected to the common electrode of the color filter substrate 200.
  • a second metal layer is used as a conductive layer.
  • the display device includes an array substrate 100 and a color filter substrate 200 disposed opposite the array substrate 100.
  • the surface of the color filter substrate 200 has an indium tin oxide layer 12, the indium tin oxide layer 12 and the color filter.
  • the common electrode of the substrate 200 is connected; the first metal layer M1, the color resist layer 110, the second metal layer M2, and the indium tin oxide layer II are sequentially formed from the bottom to the top of the array substrate 100, and a protective layer is further disposed between the layers. , passivation layer, etc.
  • the second metal layer M2 covers the surface of the liner layer 110 such that the liner layer 110 pads the second metal layer M2 to the second metal layer M2 and the indium tin oxide layer of the color filter substrate 200 12 contacts; another portion (right side) is connected to the indium tin oxide layer II, and the indium tin oxide layer II is connected to the first metal layer M1.
  • the second metal layer M2 may be directly connected to the common electrode of the array substrate 100; or the indium tin oxide layer II or the first metal layer M1 is connected to the common electrode of the array substrate 100, and the second metal layer M2 is indirectly connected by connecting the indium tin oxide layer II.
  • the common electrode of the array substrate 100 The common electrode of the array substrate 100.
  • the second metal layer M2 serves as a conduction layer, and one end is in contact with the indium tin oxide layer 12 of the color filter substrate 200 to indirectly connect the common electrode of the color filter substrate 200, and the other end is directly or indirectly connected to the array substrate 100.
  • the common electrode connection achieves the purpose of conducting the array substrate 100 and the color filter substrate 200.
  • the second metal layer M2 has better ductility and toughness than the indium tin oxide layer II, and is not easily broken. Therefore, the second metal layer M2 is used as a conduction layer to make the conduction between the two substrates more stable.
  • the lining layer 110 may be a photoresist layer, a black matrix layer, a pillar spacer layer, or the like. The color resist layer is more stable and flat.
  • the color resist layer is preferred in this embodiment. It may be one layer, two layers or multiple layers, preferably 2 to 3 layers, and the color of each layer may be the same or different, and is not limited herein; the stacking manner and the stacking shape of the color resist layer are different, and are not limited herein.
  • the second metal layer M2 as a conduction layer may also be directly connected to the common electrode of the color filter substrate 200.
  • the display device of the present invention makes full use of the metal layer or the indium tin oxide layer in the process of the array substrate as the conduction layer, and uses the pad layer to pad the conductive layer to the color filter substrate to make the conduction.
  • the layer conducts the common electrode of the array substrate and the color filter substrate.
  • the conductive structure of the invention saves the material cost, reduces the processing difficulty, improves the yield rate, and finally greatly reduces the generation cost. At the same time, it can also be applied to the design of the narrow frame of the display device to meet the aesthetic needs of users.
  • Step S101 forming a metal layer on the array substrate, the metal layer including a first metal layer and a second metal layer
  • a metal layer is formed by sputtering or other physical vapor deposition.
  • the metal layer may be a metal, an alloy or a combination of the foregoing, preferably a molybdenum/aluminum/molybdenum multilayer structure.
  • a first metal layer M1 is formed on the array substrate 100, and the first metal layer M1 is patterned.
  • the patterning method may be photolithography or etching, and a passivation layer (GI) is formed on the first metal layer M1.
  • Step S102 forming a liner layer on the array substrate
  • the liner layer 110 is formed (or coated) on the passivation layer (PV1) of the array substrate 100 and patterned, and a passivation layer (PV2) is formed, and then via patterning is performed.
  • the pad layer 110 may be a photoresist layer, a black matrix layer, a column spacer layer, or the like.
  • the color resist layer is more stable and flat.
  • the color resist layer is preferred in this embodiment. It may be one layer, two layers or multiple layers, preferably 2 to 3 layers, and the color of each layer may be the same or different, and is not limited herein; the stacking manner and the stacking shape of the color resist layer are different, and are not limited herein.
  • Step S103 forming an indium tin oxide layer on the array substrate as a conduction layer, and partially covering the surface of the liner layer
  • an indium tin oxide layer II is formed on the array substrate and patterned, wherein a portion (left side) of the indium tin oxide layer II is formed on the liner layer 110 of the display substrate 100, so that the pad 110 layer is highly oxidized.
  • the indium tin layer II; the other portion extends to the right side and is connected to the second metal layer, and is connected to the first metal layer through the opening.
  • the indium tin oxide layer II can be directly connected to the common electrode of the array substrate 100 as a conduction layer; or the first metal layer M1 is connected to the common electrode of the array substrate 100, and the indium tin oxide layer II is indirectly connected to the array by connecting the first metal layer M1.
  • the common electrode of the substrate 100; or the second metal layer M2 is connected to the common electrode of the array substrate 100, and the indium tin oxide layer II is indirectly connected to the common electrode of the array substrate 100 by connecting the second metal layer M2.
  • Step S104 the color filter substrate is abutted against a portion of the indium tin oxide layer covering the surface of the pad layer, so that the color filter substrate and the array substrate are electrically connected through the indium tin oxide layer.
  • An indium tin oxide layer 12 is usually formed on the color filter substrate 200, and the indium tin oxide layer 12 is connected to the common electrode of the color filter substrate 200.
  • the color filter substrate 200 is disposed opposite to the array substrate 100, and the color filter substrate 200 is brought into contact with the indium tin oxide layer II of the array substrate 100, thereby indium tin oxide layer II and the color filter.
  • the indium tin oxide layer 12 of the substrate 200 is in contact. Therefore, the indium tin oxide layer II serves as a conduction layer, and one end is in contact with the indium tin oxide layer 12 of the color filter substrate 200 to indirectly connect the common electrode of the color filter substrate 200, and the other end is directly or indirectly connected to the array substrate 100.
  • the common electrode connection achieves the purpose of conducting the array substrate 100 and the color filter substrate 200.
  • the color filter substrate 200 is formed by: forming (or coating) a black matrix on the color filter substrate 200 and patterning, then depositing an indium tin oxide layer 12, and finally forming (or coating) )
  • the cylindrical spacer layer is patterned and patterned.
  • the indium tin oxide layer II as a conduction layer may also be directly connected to the common electrode of the color filter substrate 200.
  • the second metal layer M2 of the array substrate 100 may also be used as a conductive layer as shown in FIG.
  • the second metal layer M2 partially covers the surface of the liner layer 110 and is in contact with the color filter substrate 200, and is directly connected to the common electrode of the color filter substrate 200, or passes through the color filter substrate 200.
  • the indium tin oxide layer 12 is indirectly connected to the public power of the color filter substrate 200 Extremely connected. Another portion may be directly connected to the common electrode of the array substrate 100; or the indium tin oxide layer II or the first metal layer M1 is connected to the common electrode of the array substrate 100, and the second metal layer M2 is indirectly connected to the array substrate 100 by connecting the indium tin oxide layer II. Common electrode.
  • the second metal layer M2 serves as a conduction layer, and one end is in contact with the color filter substrate to directly or indirectly connect the common electrode of the color filter substrate 200, and the other end is directly or indirectly connected to the common electrode of the array substrate 100.
  • the purpose of conducting the array substrate 100 and the color filter substrate 200 is also achieved.
  • a metal layer or an indium tin oxide layer in the process of the array substrate is used as a conduction layer, and the conductive layer is padned by the pad layer to be in contact with the color filter substrate, thereby making The conductive layer conducts the common electrode of the array substrate and the color filter substrate.
  • the invention saves the material cost, reduces the process flow, reduces the processing difficulty, improves the yield rate, and finally greatly reduces the production cost. At the same time, it can also be applied to the design of the narrow frame of the display device to meet the aesthetic needs of users.

Abstract

一种显示装置，包括阵列基板（100）和与该阵列基板（100）相对设置的彩色滤光片基板（200）。阵列基板（100）表面具有衬垫层（110）和导通层，衬垫层（110）垫高导通层至导通层与彩色滤光片基（200）接触，以使导通层导通阵列基板（100）和彩色滤光片基板（200）。相对于连接器和导电胶组合的导通结构，该显示装置的导通结构节省了物料成本、降低了加工难度、提高了良品率，极大的降低了生成成本。同时还可适用于显示装置窄边框的设计，满足用户的审美需求。

Description

说 明 书
显示装置及其制作方法
技术领域
本发明涉及显示技术领域， 尤其涉及一种显示装置以及该显示装置的制 作方法。 背景技术
现有的显示装置如图 1所示， 包括相对设置的阵列（Array)基板 10和彩 色滤光片 （CF) 基板 20， 二者之间填充有金珠 40， 阵列基板 10上具有连接 器 （connector) 30, 周边设有导电胶 （图未示）。 阵列基板 10和彩色滤光片 基板 20通过连接器 30和导电胶的组合实现二者的公共 （common) 电极的导 通。 这种导通结构的设计需要较高的点胶精度， 因此良品率较低， 生成成本 较高； 且连接器 30的尺寸较大， 不适合显示装置窄边框的设计， 无法满足用 户的审美需求。 发明内容
本发明的主要目的在于提供一种显示装置及其制造方法， 旨在改良导通 结构， 降低生成成本。
为达以上目的， 本发明提出一种显示装置， 包括阵列基板和与该阵列基 板相对设置的彩色滤光片基板， 其特征在于， 所述阵列基板表面具有衬垫层 和导通层， 所述衬垫层垫高所述导通层至该导通层与所述彩色滤光片基板接 触， 以使所述导通层导通所述阵列基板和彩色滤光片基板； 所述衬垫层为色 阻层， 所述色阻层至少为两层。
优选地， 所述导通层为金属层或氧化铟锡层。
本发明还提出一种同一发明构思的显示装置， 包括阵列基板和与该阵列 基板相对设置的彩色滤光片基板， 所述阵列基板表面具有衬垫层和导通层， 所述衬垫层垫高所述导通层至该导通层与所述彩色滤光片基板接触， 以使所 述导通层导通所述阵列基板和彩色滤光片基板。 优选地， 所述导通层为金属层或氧化铟锡层。
优选地， 所述导通层为氧化铟锡层， 所述阵列基板表面还具有与所述阵 列基板的公共电极连接的金属层， 所述氧化铟锡层通过连接所述金属层来间 接连接所述公共电极。
优选地， 所述导通层为第二金属层， 所述阵列基板表面还具有与所述阵 列基板的公共电极连接的第一金属层和与该第一金属层连接的氧化铟锡层， 所述第二金属层通过连接所述氧化铟锡层来间接连接所述公共电极。
优选地， 所述彩色滤光片基板表面具有与该彩色滤光片基板的公共电极 连接的氧化铟锡层， 所述导通层通过与所述彩色滤光片基板的氧化铟锡层接 触来间接连接所述彩色滤光片基板的公共电极。
优选地， 所述导通层直接连接所述阵列基板的公共电极或 /和彩色滤光片 基板的公共电极。
优选地， 所述衬垫层为色阻层、 黑矩阵层或柱形隔垫物层。
优选地， 所述衬垫层为色阻层， 所述色阻层至少为两层。
本发明同时提出一种显示装置的制作方法， 包括步骤：
在阵列基板上形成衬垫层；
在阵列基板上形成导通层， 所述导通层部分覆盖于所述衬垫层表面； 将彩色滤光片基板与覆盖于所述衬垫层表面的部分导通层抵接， 以使所 述导通层导通所述阵列基板和彩色滤光片基板。
优选地， 所述衬垫层为色阻层， 所述色阻层至少为两层。
优选地， 所述导通层为金属层或氧化铟锡层。
优选地， 所述在阵列基板上形成导通层包括：
在阵列基本上形成氧化铟锡层作为导通层， 所述氧化铟锡层部分覆盖于 所述衬垫层表面， 并直接与阵列基板的公共电极连接。
优选地， 所述在阵列基板上形成导通层包括：
在阵列基本上形成第二金属层作为导通层， 所述第二金属层部分覆盖于 所述衬垫层表面， 并直接与阵列基板的公共电极连接。 本发明所提供的一种显示装置， 充分利用阵列基板制程中的金属层或氧 化铟锡层作为导通层， 并利用衬垫层垫高导通层至与彩色滤光片基板接触， 使得导通层将阵列基板和彩色滤光片基板的公共电极导通。 相对于现有技术 中连接器和导电胶组合形成的导通结构， 本发明的导通结构节省了物料成本、 降低了加工难度、 提高了良品率， 最终极大的降低了生成成本。 同时还可适 用于显示装置窄边框的设计， 满足用户的审美需求。
图 1是现有技术的显示装置的导通结构示意图；
图 2是本发明的显示装置第一实施例的结构示意图；
图 3是本发明的显示装置第一实施例的结构示意图；
图 4是本发明的显示装置的制作方法一实施例的流程图。
本发明目的的实现、 功能特点及优点将结合实施例， 参照附图做进一步 说明。 具体实施方式
应当理解， 此处所描述的具体实施例仅仅用以解释本发明， 并不用于限 定本发明。
本发明的显示装置， 以色阻层和导通层的组合来取代连接器和导电胶组 合， 实现阵列基板和彩色滤光片基板的导通。 其中， 导通层可以是阵列基板 制程中的金属层或氧化铟锡层 （ITO) ， 衬垫层可以是色阻（Color Filter, CF) 层、 黑矩阵 （Black Matrix, BM) 层、 柱形隔垫物 （Photo Spacer, PS , 也叫 做支撑柱） 层等光阻材料。
参见图 2， 提出本发明的显示装置第一实施例， 本实施例以氧化铟锡层作 为导通层。 所述显示装置包括阵列基板 100和与该阵列基板 100相对设置的 彩色滤光片基板 200，彩色滤光片基板 200表面具有一氧化铟锡层 12，该氧化 铟锡层 12与彩色滤光片基板 200的公共电极连接； 阵列基板 100表面从下到 上依次形成有第一金属层 Ml、第二金属层 M2、色阻层 110和氧化铟锡层 II， 各层之间还具有保护层、 钝化层等。 氧化铟锡层 II一部分 （左侧） 覆盖于衬 垫层 110表面， 使得衬垫 110层垫高氧化铟锡层 II至该氧化铟锡层 II与彩色 滤光片基板 200的氧化铟锡层 12接触； 另一部分 （右侧） 分别与第一金属层 Ml和第二金属层连 M2接。氧化铟锡层 II可以直接连接阵列基板 100的公共 电极； 或者第一金属层 Ml与阵列基板 100的公共电极连接， 氧化铟锡层 II 通过连接第一金属层 Ml间接连接阵列基板 100的公共电极;或者第二金属层 M2与阵列基板 100的公共电极连接，氧化铟锡层 II通过连接第二金属层 M2 间接连接阵列基板 100的公共电极。 从而， 氧化铟锡层 II作为导通层， 一端 与彩色滤光片基板 200的氧化铟锡层 12接触而间接连接彩色滤光片基板 200 的公共电极， 另一端直接或间接的与阵列基板 100的公共电极连接， 实现了 将阵列基板 100和彩色滤光片基板 200导通的目的。
衬垫层 110可以为色阻层、 黑矩阵层、 柱形隔垫物层等等光阻材料， 因 色阻层堆叠更稳定平整， 本实施例优选色阻层， 根据实际情况， 色阻层可以 是一层、 两层或多层， 优选 2〜3层， 各层颜色可以相同或相异， 在此不做限 制； 色阻层的堆叠方式和堆叠形状各异， 在此不做限制。
在某些实施例中， 作为导通层的氧化铟锡层 II也可以直接与彩色滤光片 基板 200的公共电极连接。
参见图 3， 提出本发明的显示装置第二实施例， 本实施例以第二金属层作 为导通层。 所述显示装置包括阵列基板 100和与该阵列基板 100相对设置的 彩色滤光片基板 200，彩色滤光片基板 200表面具有一氧化铟锡层 12，该氧化 铟锡层 12与彩色滤光片基板 200的公共电极连接； 阵列基板 100表面从下到 上依次形成有第一金属层 Ml、色阻层 110、第二金属层 M2和氧化铟锡层 II，， 各层之间还具有保护层、钝化层等。第二金属层 M2—部分（左侧）覆盖于衬 垫层 110表面，使得衬垫层 110垫高第二金属层 M2至该第二金属层 M2与彩 色滤光片基板 200的氧化铟锡层 12接触； 另一部分 （右侧） 与氧化铟锡层 II 连接， 氧化铟锡层 II与第一金属层 Ml连接。 第二金属层 M2可以直接连接 阵列基板 100的公共电极； 或者氧化铟锡层 II或第一金属层 Ml与阵列基板 100的公共电极连接， 第二金属层 M2通过连接氧化铟锡层 II间接连接阵列 基板 100的公共电极。从而， 第二金属层 M2作为导通层， 一端与彩色滤光片 基板 200的氧化铟锡层 12接触而间接连接彩色滤光片基板 200的公共电极， 另一端直接或间接的与阵列基板 100的公共电极连接，实现了将阵列基板 100 和彩色滤光片基板 200导通的目的。 相对于氧化铟锡层 II， 第二金属层 M2 的延展性和韧性更佳，不容易断裂， 因此以第二金属层 M2作为导通层使得两 基板的导通更加稳定。 衬垫层 110可以为色阻层、 黑矩阵层、 柱形隔垫物层等等光阻材料， 因 色阻层堆叠更稳定平整， 本实施例优选色阻层， 根据实际情况， 色阻层可以 是一层、 两层或多层， 优选 2〜3层， 各层颜色可以相同或相异， 在此不做限 制； 色阻层的堆叠方式和堆叠形状各异， 在此不做限制。
在某些实施例中，作为导通层的第二金属层 M2也可以直接与彩色滤光片 基板 200的公共电极连接。
据此， 本发明的显示装置， 充分利用阵列基板制程中的金属层或氧化铟 锡层作为导通层， 并利用衬垫层垫高导通层至与彩色滤光片基板接触， 使得 导通层将阵列基板和彩色滤光片基板的公共电极导通。 相对于现有技术中连 接器和导电胶组合的导通结构， 本发明的导通结构节省了物料成本、 降低了 加工难度、 提高了良品率， 最终极大的降低了生成成本。 同时还可适用于显 示装置窄边框的设计， 满足用户的审美需求。
结合参见图 2和图 4，提出一种上述显示装置的制作方法，包括以下步骤： 步骤 S101、 在阵列基板上形成金属层， 该金属层包括第一金属层和第二 金属层
本步骤 S101中， 以溅射或其它物理气相沉积方式形成金属层， 金属层可 以为金属、 合金或者前述二者组合的多层结构， 优选为钼 /铝 /钼的多层结构。 首先在阵列基板 100上形成第一金属层 Ml， 并使第一金属层 Ml图形化， 图 形化的方法可以是光刻或蚀刻， 再在第一金属层 Ml上形成钝化层 （GI)， 并 在钝化层（GI)上设一开口露出部分第一金属层 Ml ;然后在开口一边（右侧） 的钝化层 （GI) 上形成非晶硅层 （AS) 并图形化， 在开口另一边 （左侧） 的 钝化层上形成第二金属层 M2并图形化， 并在第二金属层 M2上形成钝化层 (PV1 )。
步骤 S102、 在阵列基板上形成衬垫层
本步骤 S102中， 在阵列基板 100的钝化层 （PV1 ) 上形成 （或涂布） 衬 垫层 110并图形化， 并形成钝化层 （PV2)， 然后进行过孔图形化。衬垫层 110 可以为色阻层、 黑矩阵层、 柱形隔垫物层等等光阻材料， 因色阻层堆叠更稳 定平整， 本实施例优选色阻层， 根据实际情况， 色阻层可以是一层、 两层或 多层， 优选 2〜3层， 各层颜色可以相同或相异， 在此不做限制； 色阻层的堆 叠方式和堆叠形状各异， 在此不做限制。 步骤 S103、 在阵列基板上形成氧化铟锡层作为导通层， 且氧化铟锡层部 分覆盖于衬垫层表面
本步骤 S103中，在阵列基板上形成氧化铟锡层 II并图形化，其中氧化铟 锡层 II一部分 (左侧)形成于陈列基板 100的衬垫层 110上， 使得衬垫 110层垫 高氧化铟锡层 II； 另一部分往右侧延伸与第二金属层连接， 并通过上述开口 与第一金属层连接。
氧化铟锡层 II作为导通层， 可以直接连接阵列基板 100的公共电极； 或 者第一金属层 Ml与阵列基板 100的公共电极连接， 氧化铟锡层 II通过连接 第一金属层 Ml间接连接阵列基板 100的公共电极；或者第二金属层 M2与阵 列基板 100的公共电极连接， 氧化铟锡层 II通过连接第二金属层 M2间接连 接阵列基板 100的公共电极。
步骤 S104、 将彩色滤光片基板与覆盖于衬垫层表面的部分氧化铟锡层抵 接， 使得彩色滤光片基板和阵列基板通过氧化铟锡层导通
彩色滤光片基板 200上通常形成有氧化铟锡层 12， 且氧化铟锡层 12与彩 色滤光片基板 200的公共电极连接。 将制作好的彩色滤光片基板 200与阵列 基板 100相对设置， 并使得彩色滤光片基板 200与阵列基板 100的氧化铟锡 层 II抵接， 从而氧化铟锡层 II就与彩色滤光片基板 200的氧化铟锡层 12接 触。 从而， 氧化铟锡层 II作为导通层， 一端与彩色滤光片基板 200的氧化铟 锡层 12接触而间接连接彩色滤光片基板 200的公共电极， 另一端直接或间接 的与阵列基板 100的公共电极连接， 实现了将阵列基板 100和彩色滤光片基 板 200导通的目的。
其中， 彩色滤光片基板 200的制作流程大致为： 在彩色滤光片基板 200 上形成 （或涂布） 黑矩阵并进行图形化， 然后沉积形成氧化铟锡层 12， 最后 形成 （或涂布） 柱形隔垫物层并进行图形化。
在某些实施例中， 作为导通层的氧化铟锡层 II也可以直接与彩色滤光片 基板 200的公共电极连接。
在某些实施例中， 也可以如图 3所示以阵列基板 100的第二金属层 M2 作为导通层。此时第二金属层 M2—部分覆盖于衬垫层 110表面并与彩色滤光 片基板 200接触， 并直接与彩色滤光片基板 200的公共电极连接， 或通过彩 色滤光片基板 200上的氧化铟锡层 12间接的与彩色滤光片基板 200的公共电 极连接。 另一部分可以直接连接阵列基板 100的公共电极； 或者氧化铟锡层 II或第一金属层 Ml与阵列基板 100的公共电极连接，第二金属层 M2通过连 接氧化铟锡层 II间接连接阵列基板 100的公共电极。 从而， 第二金属层 M2 作为导通层， 一端与彩色滤光片基板接触而直接或间接的连接彩色滤光片基 板 200的公共电极， 另一端直接或间接的与阵列基板 100的公共电极连接， 同样实现了将阵列基板 100和彩色滤光片基板 200导通的目的。
据此， 本发明的显示装置的制作方法， 利用阵列基板制程中的金属层或 氧化铟锡层作为导通层， 并利用衬垫层垫高导通层至与彩色滤光片基板接触， 使得导通层将阵列基板和彩色滤光片基板的公共电极导通。 相对于现有技术 中连接器和导电胶的组合， 本发明节省了物料成本、 减少了工艺流程、 降低 了加工难度、 提高了良品率， 最终极大的降低了生成成本。 同时还可适用于 显示装置窄边框的设计， 满足用户的审美需求。
应当理解的是， 以上仅为本发明的优选实施例， 不能因此限制本发明的 专利范围， 凡是利用本发明说明书及附图内容所作的等效结构或等效流程变 换， 或直接或间接运用在其他相关的技术领域， 均同理包括在本发明的专利 保护范围内。

Claims

权 利 要 求 书
1、 一种显示装置， 包括阵列基板和与该阵列基板相对设置的彩色滤光片 基板， 其特征在于， 所述阵列基板表面具有衬垫层和导通层， 所述衬垫层垫 高所述导通层至该导通层与所述彩色滤光片基板接触， 以使所述导通层导通 所述阵列基板和彩色滤光片基板； 所述衬垫层为色阻层， 所述色阻层至少为 两层。
2、 根据权利要求 1所述的显示装置， 其特征在于， 所述导通层为金属层 或氧化铟锡层。
3、 一种显示装置， 包括阵列基板和与该阵列基板相对设置的彩色滤光片 基板， 其特征在于， 所述阵列基板表面具有衬垫层和导通层， 所述衬垫层垫 高所述导通层至该导通层与所述彩色滤光片基板接触， 以使所述导通层导通 所述阵列基板和彩色滤光片基板。
4、 根据权利要求 3所述的显示装置， 其特征在于， 所述导通层为金属层 或氧化铟锡层。
5、 根据权利要求 3所述的显示装置， 其特征在于， 所述导通层为氧化铟 锡层， 所述阵列基板表面还具有与所述阵列基板的公共电极连接的金属层， 所述氧化铟锡层通过连接所述金属层来间接连接所述公共电极。
6、 根据权利要求 3所述的显示装置， 其特征在于， 所述导通层为第二金 属层， 所述阵列基板表面还具有与所述阵列基板的公共电极连接的第一金属 层和与该第一金属层连接的氧化铟锡层， 所述第二金属层通过连接所述氧化 铟锡层来间接连接所述公共电极。
7、 根据权利要求 3所述的显示装置， 其特征在于， 所述彩色滤光片基板 表面具有与该彩色滤光片基板的公共电极连接的氧化铟锡层， 所述导通层通 过与所述彩色滤光片基板的氧化铟锡层接触来间接连接所述彩色滤光片基板 的公共电极。
8、 根据权利要求 3所述的显示装置， 其特征在于， 所述导通层直接连接 所述阵列基板的公共电极或 /和彩色滤光片基板的公共电极。
9、根据权利要求 3所述的显示装置， 其特征在于， 所述衬垫层为色阻层、 黑矩阵层或柱形隔垫物层。
10、 根据权利要求 3 所述的显示装置， 其特征在于， 所述衬垫层为色阻 层， 所述色阻层至少为两层。
11、 根据权利要求 5 所述的显示装置， 其特征在于， 所述衬垫层为色阻 层， 所述色阻层至少为两层。
12、 根据权利要求 6所述的显示装置， 其特征在于， 所述衬垫层为色阻 层， 所述色阻层至少为两层。
13、 一种显示装置的制作方法， 其特征在于， 包括步骤：
在阵列基板上形成衬垫层；
在阵列基板上形成导通层， 所述导通层部分覆盖于所述衬垫层表面； 将彩色滤光片基板与覆盖于所述衬垫层表面的部分导通层抵接， 以使所 述导通层导通所述阵列基板和彩色滤光片基板。
14、 根据权利要求 13所述的显示装置的制作方法， 其特征在于， 所述衬 垫层为色阻层、 黑矩阵层或柱形隔垫物层。
15、 根据权利要求 13所述的显示装置的制作方法， 其特征在于， 所述衬 垫层为色阻层， 所述色阻层至少为两层。
16、 根据权利要求 13所述的显示装置的制作方法， 其特征在于， 所述导 通层为金属层或氧化铟锡层。
17、 根据权利要求 13所述的显示装置的制作方法， 其特征在于， 所述在 阵列基板上形成导通层包括：
在阵列基本上形成氧化铟锡层作为导通层， 所述氧化铟锡层部分覆盖于 所述衬垫层表面， 并直接与阵列基板的公共电极连接。
18、 根据权利要求 13所述的显示装置的制作方法， 其特征在于， 所述在 阵列基板上形成导通层包括：
在阵列基本上形成第二金属层作为导通层， 所述第二金属层部分覆盖于 所述衬垫层表面， 并直接与阵列基板的公共电极连接。
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