Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
  • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
  • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
  • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
  • H01L2224/321—Disposition
  • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
  • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
  • H01L2224/321—Disposition
  • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
  • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
  • H01L2224/45001—Core members of the connector
  • H01L2224/45099—Material
  • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
  • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
  • H01L2224/45144—Gold (Au) as principal constituent
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
  • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
  • H01L2224/732—Location after the connecting process
  • H01L2224/73251—Location after the connecting process on different surfaces
  • H01L2224/73265—Layer and wire connectors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
  • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
  • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
  • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
  • H01L2225/06503—Stacked arrangements of devices
  • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
  • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/151—Die mounting substrate
  • H01L2924/153—Connection portion
  • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
  • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Definitions

• the present invention relates to a process for die bonding in electronic products, in particular, relates to a process for die bonding in memory card such as embedded Multi Media Card.
• eMMC embedded Multi Media Card
• eMMC embedded Multi Media Card
• Multi Media Card for embedded memory which is one of the main specifications for a smooth pathway to elegant and advanced mobile designs with a short time to market.
• the current trend for developing eMMC is that the controller die moves to the substrate and under the memory die for purpose of space saving, minimization and multi-functionalisation, which means, the mother memory die needs to be attached to the top of the controller die or other similar component in advance.
• Alternative solution 2 is to use standard molding process to mold the controller die and/or other similar component then followed with standard stack die bonding, wire bonding and molding.
• an extra film material is needed to attach the memory die which increases the total material cost, and usually the adhesion between the film and the molding compound is very limited.
• both of the above solutions have been demonstrated not so positive because of die crack issue, delamination, high warpage or low yield.
• Dam and fill material is known in the adhesive area and it has also been applied in electronic product packaging for a while. In the prior art, however, the dam and fill material is only used for packaging so as to protect the components therein. There is no attempt so far to develop a dam and fill material which can not only be used for packaging but also can be further used to directly bond components in the electronic products, such as die components.
• one object of the present invention is to provide an easy and low cost process for die bonding and to solve the problems in the existing solutions, such as warpage, low yield and high cost.
• a process by utilizing a dam material and a fill material (briefly as the D-F process) and a printing process by utilizing a printed steel stencil with a set of particular apertures and a paste material (briefly as the printing process) can solve the warpage and die crack problems which often occur while using FOD or other alternative solutions in die bonding.
• Both of the processes achieve good adhesion and low stress/strip warpage in die bonding, and they are easy and low cost processes which are suitable for big controller die and ultra thin memory die. In some cases, no additional film or die attachment material is needed for attaching the memory die.
• the D-F process is provided, and said D-F process for die bonding comprises the following steps:
• a dam material is dispensed around one or more first die on a substrate
• the fill material is partially cured
• the dam material is similar to the standard DA (Die Attachment) paste but has relatively high viscosity and high T.I. which helps to keep its original shape after dispensing, while the fill material has very low viscosity and very good flow-ability so that it can easily flow along substrate, wire, die and other components and get full coverage in a very short time after dispensing.
• DA Die Attachment
• the printing process comprises the following steps:
• a printed steel stencil with a set of particular apertures is used to cover one or more first die on a substrate
• the paste material is partially cured; 4) a second die is bonded onto the paste material;
• the printing process is even easier and gives very high UPH (unit per hour) than the D-F process.
• the present invention also provides a memory card, such as embedded Multi Media Card prepared from the D-F process or the printing process.
• a memory card such as embedded Multi Media Card prepared from the D-F process or the printing process.
• Figure la and lb are schematic drawings showing the traditional configuration of the eMMC package
• Figure 2 is a schematic drawing showing the modified configuration of the eMMC package
• FIG. 3 is a flow chart showing the steps in the D-F process.
• Figure 4 is a flow chart showing the steps in the printing process.
• compositions comprising, “comprising”, “includes”, “including,” “has”, “having”, “contains” or “containing”, or any other variation thereof, are intended to cover a non-exclusive inclusion.
• a composition, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.
• “or” refers to an inclusive “or” and not to an exclusive “or”.
• a condition A “or” B is satisfied by any one of the following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).
• the dam material comprises basic resin, epoxy hardener, curing agent, filler, and other additives, wherein the basic resin is one or more selected from the group consisting of Epoxy Resin, BMI Resin and Vinyl Resin.
• Epoxy Resin also known as polyepoxide, is a class of reactive prepolymer and polymer which contains epoxide groups, such as Bisphenol-A epoxy, CTBN modified epoxy, etc. Epoxy Resin may be reacted (cross-linked) either with themselves through catalytic homopolymerisation, or with a wide range of co-reactants including polyfunctional amines, acids (and acid anhydrides), phenols, alcohols, and thiols. These co-reactants are often referred to as epoxy hardener.
• BMI Resin short for bismaleimide resin, is a class of compounds with two maleimide groups connected by the nitrogen atoms via a linker (said link for example being an alkylene group).
• linker for example being an alkylene group.
• Poly-(oxytetra-methylene)-di-(2-maleimidoacetate) is such kind of BMI resin.
• Vinyl Resin is a kind of monomer, prepolymer or polymer which contains vinyl groups, such as Phenoxy ethyl acrylate and poly butadiene.
• Epoxy hardener as explained for Epoxy Resin above, includes a wide range of co-reactants reacted with Epoxy Resin, including polyfunctional amines, acids (and acid anhydrides), phenols, alcohols, and thiols.
• curing agent is an ingredient that helps harden or cure another substrate.
• peroxide is usually the curing agent for Vinyl Resin, as well as for BMI Resin.
• Filler is particulate substance added to a matrix material, usually to improve its properties, such as viscosity, T.I., inner strength and coefficient of thermal expansion. Silica and alumina are typical fillers.
• the basic resin can comprise Epoxy Resin, BMI Resin and Vinyl Resin at the same time, the epoxy hardener can cure Epoxy Resin, the curing agent can cure BMI and Vinyl Resins, and the filler is used for adjusting T.I., improving the strength etc. Also, the additives are included to increase the adhesion, flow-ability and adjust T.I.
• the dam material comprises 0-20%, preferably 4-8%> of Epoxy Resin, 0-30%>, preferably 20-28% of BMI Resin, 0-30%, preferably 14-20% of Vinyl Resin, 0-5%, preferably 0.2-1.0%) of epoxy hardener, 0-5%>, preferably 0.2-1.2%> of curing agent, 30-80%), preferably 40-60%) of filler and 0-5%>, preferably 0.5-2.0%) of other additives, based on the total weight of the dam material and the sum of each component being 100%.
• the viscosity of the dam material at 5 rpm at 25 ° C is in the range of 5,000-500,000 mPa-s, preferably in the range of 40,000-50,000 mPa-s, the thixotropic index (T.I.) of the dam material is more than 1.0, preferably from 4.0-6.0.
• the fill material comprises basic resin, epoxy hardener, curing agent, filler, and other additives, wherein the basic resin is one or more selected from the group consisting of Epoxy Resin, BMI Resin and Vinyl Resin.
• Epoxy Resin can be selected from Bisphenol-A Epoxy and Bisphenol-F Epoxy.
• the fill material can be any common and conventional components chosen by a person skilled in the art as long as the fill material has very low viscosity and very good flow-ability so that it can easily flow along substrate, wire, die and other components and get full coverage in a very short time after dispensing.
• the basic resin can comprise Epoxy Resin, BMI resin and Vinyl Resins at the same time
• the epoxy hardener can cure Epoxy Resin
• the curing agent can cure BMI resin and Vinyl Resin
• the filler is used for adjusting T.I., improving the strength etc.
• the additives are included to increase the adhesion, anti-bleed and adjust T.I.
• the fill material comprises 0-30%, preferably 8-16% of Epoxy Resin, 0-40%, preferably 25-30% of BMI Resin, 0-40%, preferably 6-16% of Vinyl Resin, 0-5%, preferably 0.2-1.2% of epoxy hardener, 0-5%>, preferably 0.6-1.0%) of curing agent, 0-70%>, preferably 45-50%) of filler and 0-5%>, preferably 0.8-1.5%) of other additives, based on the total weight of the fill material and the sum of each component being 100%.
• the viscosity of the fill material at 25 ° C is in the range of less than 50,000 mPa-s, more preferably less than 10,000 mPa-s, the T.I of the fill material is less than 3.0, more preferably less than 1.5.
• the first die is a controller die and the second die is a memory die.
• first die and second die within the meaning of the present invention shall be construed in a way that they are used to differentiate dies used in different steps, there is no specific limit to the types of the "first die” and the “second die”, which comprises common types of dies used in a memory card, as well as passive components such as capacitance, resistance, inductance, and other functional dies, such as RF-related dies, security dies, sensor dies, power dies, digital signal processor dies, logic dies, transceiver dies and so on.
• step 2) the substrate is heated slightly so as to improve the flow and coverage of the fill material.
• the cure is performed via UV or heating.
• the region defined by the dam material has an area of about 70% -100% of the area of the second die, preferably 90%.
• the paste material comprises basic resin, epoxy hardener, curing agent, filler, and other additives, wherein the basic resin is one or more selected from the group consisting of Epoxy Resin, BMI Resin and Vinyl Resin.
• Epoxy Resin can be selected from Bisphenol-A Epoxy and Bisphenol-F Epoxy.
• the basic resin can comprise Epoxy Resin, BMI Resin and Vinyl Resin at the same time, the epoxy hardener can cure epoxy resin, the curing agent can cure BMI and Vinyl resins, and the filler is used for adjusting T.I., improving the strength etc. Also, the additives are included to increase the adhesion and adjust T.I. etc.
• the paste material comprises 0-30%, preferably 5-10% of Epoxy Resin, 0-30%>, preferably 20-30%) of BMI Resin, 0-30%, preferably 15-28% of Vinyl Resin, 0-6%, preferably 0.2-1.5% of epoxy hardener, 0-5%>, preferably 0.2-1.0%) of curing agent, 30-70%), preferably 30-55%) of filler, and 0-5%), preferably 1.0-1.5%) of other additives, based on the total weight of the paste material and the sum of each component being 100%.
• the viscosity of the paste material at 25 ° C is in the range of 1,000-500,000 mPa-s, preferably in the range of 15,000-50,000 mPa-s, the T.I. of the paste material is more than 1.0, preferably from 1.5-3.0.
• a dam material can be optionally dispensed around said one or more first die on a substrate.
• Said dam material is the same with the dam material applied in the D-F process, and a discussion for the dam material is omitted herein.
• the first die is a controller die and the second die is a memory die.
• first die and second die within the meaning of the present invention shall be construed in a way that they are used to differentiate dies used in different steps, there is no specific limit to the types of the "first die” and the “second die”, which comprises common types of dies used in a memory card, as well as passive components such as capacitance, resistance, inductance, and other functional dies, such as RF-related dies, security dies, sensor dies, power dies, digital signal processor dies, logic dies, transceiver dies and so on.
• the cure is performed via UV or heating.
• the viscosity for the dam material, the fill material, and the paste material was measured by Brookfield Model HBDV-III (CP-51), supplied by Brookfield, at 5 rpm at 25 ° C .
• T.I. value for the dam material, the fill material and the paste material was calculated based on the following equation:
• the viscosity at 0.5 rpm and at 5.0 rpm is measured by Brookfield Model HBDV-III (CP-51), supplied by Brookfield Corporation, at 25 ° C .
• Curing reaction profiles of the dam material, the fill material and the paste material were obtained by determining the heat flow through the materials as a function of temperature using a Perkin-Elmer Differential Scanning Calorimeter (DSC-7), supplied by Perkin-Elmer Inc.
• the temperature range was from 25 ° C to 300 ° C at a temperature raising rate of 10 ° C /min.
• the die shear tester was Dage 4000, supplied by Dage.
• Strip Warpage was measured by placing an object on a horizontal plane, determining the difference between the highest point and the lowest point of the warpage by Cyber scan laser profilometer VANTAGE -2 (Supplied by Cyber Technologies).
• SR 610 Poly(ethylene glycol) diacrylate, supplied by Sartomer
• RAS-1 Functionalized Epoxy Resin, supplied by Henkel
• EPON Resin 58005 CTBN modified Epoxy Resin, supplied by Hexion Art Resin UN 9200: Polyurethane modified acrylate, supplied by Negami Chemical SRM-1 : BMI Resin, supplied by Henkel
• Ricon 131 MA10 Maleic anhydride butadiene copolymer, supplied by Sartomer Catalyst 313 B: N,N'-(4-Methyl- 1 ,3-phenylene)di(pyrrolidine- 1 -carboxamide), epoxy hardener, supplied by Henkel
• AO-802 Alumina, supplied by Admatechs
• XG-1270 Silica, supplied by Gelest
• the viscosity of the fill material at 5 rpm was measured as 3992 mPa-s and the viscosity thereof at 0.5 rpm was measured as 4643 mPa-s, so T.I. for the fill material 1 was 1.163.
• the data relating with DSC Peak for the fill material 1 was reported in Table 1.
• the fill material 2 was prepared in the same way as the fill material 1 , except that the amount of each component in the fill material 2 was changed according to the data shown in Table 1.
• Example 3
• the fill material 3 was prepared in the same way as the fill material 1 , except that the amount of each component in the fill material 3 was changed according to the data shown in Table 1.
• Table 1 The composition of the fill material in Examples 1-3
• the dam material 5 was prepared in the same way as the dam material 4, except that the amount of each component in the dam material 5 was changed according to the data shown in Table 2.
• the dam material 6 was prepared in the same way as the dam material 4, except that the amount of each component in the dam material 6 was changed according to the data shown in Table 2.
• the viscosity of the paste material at 5 rpm was measured as 21990 mPa-s and the viscosity thereof at 0.5 rpm was measured as 45420 mPa-s, so T.I. for the paste material 4 was 2.065.
• the data relating with DSC Peak for the paste material 7 was reported in Table 3.
• the paste material 8 was prepared in the same way as the paste material 7, except that the amount of each component in the paste material 8 was changed according to the data shown in Table 3.
• the dam material 4 was first dispensed around a controller die, the viscosity (44370 mPa-s) thereof was higher than that of the standard die bonding (about 10000 mPa-s), and thus can keep its original shape.
• the nozzle size (internal diameter) for the dam material was 0.30 mm with a frame dispensing pattern.
• the air pressure was 0.34 MPa, the dispensing speed was 9 mm/s, and the dispensing height was 0.08 mm.
• the stage temperature was 25 ° C .
• the fill material had very low viscosity and T.I., which can have very good flow-ability at BGA substrate.
• the nozzle size for the fill material was 0.50 mm with a maze v2 dispensing pattern.
• the air pressure was 0.12 MPa
• the dispensing speed was 37.5 mm/s
• the dispensing height was 0.14 mm.
• the substrate was slightly heated to improve the flow and coverage.
• the stage temperature was 65 ° C .
• the fill material was pre-heated to form a tacky surface. Then, a memory die was attached thereon.
• the Bond force was 200g and the bond time was 1000 ms.
• the partially cured material was then put into an oven for complete cure.
• die bond result is shown in Table 4, that is, the BLT was 80 ⁇ , the adhesion at room temperature was 4.3 kgf/mm 2 and the strip warpage was 50 ⁇ .
• the other twelve groups were performed in the same way as for Group #1 except that the corresponding process parameters were changed in accordance with those shown in Table 4.
• BLT is controllable according to the inventive D-F process, such as in the range of from 80 to 200 ⁇ .
• Adhesion at room temperature according to the inventive D-F process is equal to or more than 3.9 kgf/mm 2 , which is much higher than the average value of around 2.5 kgf/mm 2 in the prior art.
• Strip warpage is even better since it is much less than 100 ⁇ , which means that on one hand the warpage according to the inventive process is not visible by naked eyes, and on the other hand, it is better than the average value of higher than 100 ⁇ in the prior art.
• Eight groups of the die bonding test were performed according to the printing process. Take Group #1 for example, a printed steel stencil having a thickness of 125 um with a set of particular apertures was used to cover a controller die on a substrate, then the paste material 7 was printed into the apertures so as to cover the controller die.
• the squeegee pressure was 1 kg, with a squeegee speed of 10 mm/sec and a separation speed of 0.5 mm/sec.
• the paste material was partially cured.
• a memory die was attached onto the paste material.
• the Bond force was 200 g and the bond time was 1000 ms.
• the partially cured material was then put into an oven for complete cure.
• die bond result is shown in Table 5, that is, the BLT was 100 ⁇ , the adhesion at room temperature was 4.3 kgf/mm 2 and the strip warpage was 50 ⁇ .
• the other seven groups were performed in the same way as for Group #1 except that the corresponding process parameters were changed in accordance with those shown in Table 5.
• BLT is controllable according to the inventive printing process, such as in the range of from 80 to ⁇ .
• Adhesion at room temperature according to the inventive printing process is equal to or more than 4.06 kgf/mm 2 , which is much higher than the average value of around 2.5 kgf/mm 2 in the prior art.
• Strip warpage is even better since it is much less than 100 ⁇ , which means that on one hand the warpage according to the inventive process is not visible by naked eyes, and on the other hand, it is better than the average value of higher than 100 ⁇ in the prior art.

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• Dispersion Chemistry (AREA)
• Chemical & Material Sciences (AREA)
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• Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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