WO2015064304A1 - 電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 - Google Patents
電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 Download PDFInfo
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- WO2015064304A1 WO2015064304A1 PCT/JP2014/076576 JP2014076576W WO2015064304A1 WO 2015064304 A1 WO2015064304 A1 WO 2015064304A1 JP 2014076576 W JP2014076576 W JP 2014076576W WO 2015064304 A1 WO2015064304 A1 WO 2015064304A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to an electronic device sealing resin sheet and an electronic device package manufacturing method.
- Patent Document 1 and Patent Document 2 a resin sheet is disposed on an electronic functional element (such as a SAW filter) mounted on a substrate, and then the electronic functional element mounted on the substrate and the resin sheet are gas-barrier.
- the method is disclosed in which the inside of the bag is depressurized and the electronic functional element in the bag is then sealed with a resin sheet.
- This method has the merit that the SAW filter can be sealed under reduced pressure, so that generation of voids can be reduced, and the method can be implemented with a simple pressure reducing device.
- Patent Document 1 and Patent Document 2 the resin sheet and the inner surface of the bag are easily in contact with each other, and the resin sheet is easily displaced.
- a resin sheet highly filled with an inorganic filler is particularly easily displaced.
- An object of the present invention is to solve the above-mentioned problems and to provide an electronic device sealing resin sheet and an electronic device package manufacturing method that are not easily displaced.
- the present invention relates to a resin sheet for encapsulating an electronic device having a probe tack at 25 ° C. measured using a probe having a diameter of 25 mm of 5 g to 500 g. Since the resin sheet satisfies the above-described tackiness, it is difficult to slip.
- the surface roughness (Ra) of the resin sheet is preferably 400 nm or less. Thereby, said tack property can be achieved easily.
- the resin sheet contains an inorganic filler, and the content of the inorganic filler in the resin sheet is preferably 60 to 90% by volume. Thereby, a thermal expansion coefficient and a water absorption rate can be made small. In addition, deformation of the resin sheet due to contact between the resin sheet and the inner surface of the vacuum packaging container can be prevented or reduced.
- the resin sheet contains an epoxy resin and the softening point of the epoxy resin is 100 ° C. or less.
- said tack property can be achieved easily, without reducing an inorganic filler. That is, the difficulty of shifting can be increased without reducing the thermal expansion coefficient and the water absorption rate.
- the said resin sheet contains a phenol resin and the softening point of the said phenol resin is 100 degrees C or less.
- said tack property can be achieved easily, without reducing an inorganic filler. That is, the difficulty of shifting can be increased without reducing the thermal expansion coefficient and the water absorption rate.
- the tensile storage modulus of the resin sheet at 25 ° C. is preferably 10 ⁇ 2 MPa to 10 3 MPa.
- the resin sheet is preferably used for sealing an electronic device placed in a vacuum packaging container.
- the resin sheet is suitable for this method because it is not easily displaced even when it comes into contact with the inner surface of the vacuum packaging container.
- the resin sheet includes a step of disposing a resin sheet on an electronic device mounted on a substrate, the electronic device mounted on the substrate, and the resin sheet disposed on the electronic device in a vacuum packaging container. It is preferable to be used for the manufacturing method of an electronic device package including the process of putting in and the process of sealing the said electronic device in the said vacuum packaging container with the said resin sheet.
- the resin sheet is suitable for this method because it is not easily displaced even when it comes into contact with the inner surface of the vacuum packaging container. This method is described in International Publication WO2005 / 071731 and Japanese Patent No. 5223657.
- the electronic device is a SAW filter.
- the present invention also relates to a method of manufacturing an electronic device package including a step of sealing an electronic device with a resin sheet having a probe tack of 25 ° C. measured using a probe having a diameter of 25 mm and having a probe tack of 5 g to 500 g.
- the manufacturing method of the electronic device package includes a step of disposing the resin sheet on the electronic device mounted on a substrate, the electronic device mounted on the substrate, and the resin disposed on the electronic device.
- FIG. 3 is a schematic cross-sectional view of a resin sheet according to Embodiment 1.
- FIG. It is a cross-sectional schematic diagram of the printed wiring board which mounts a SAW filter. It is a figure which shows typically a mode that the resin sheet was laminated
- FIG. 1 is a schematic cross-sectional view of a resin sheet 11 according to the first embodiment.
- supports such as a polyethylene terephthalate (PET) film may be provided on both surfaces of the resin sheet 11.
- PET polyethylene terephthalate
- a release treatment may be applied to the support.
- the resin sheet 11 is preferably thermosetting.
- the 25 degreeC probe tack measured using the probe of diameter 25mm is 5 g or more, and 20 g or more is preferable. Since it is 5 g or more, when the resin sheet 11 is mounted on the sealing portion, the resin sheet 11 is brought into close contact with the electronic device.
- the probe tack at 25 ° C. is 500 g or less. Since it is 500 g or less, when the resin sheet 11 is displaced at the time of mounting, it can be peeled off and mounted again for alignment.
- the probe tack of 25 degreeC measured using the probe of diameter 25mm can be measured by the method as described in an Example.
- the surface roughness (Ra) of the resin sheet 11 is preferably 400 nm or less, and more preferably 200 nm or less. When the thickness is 400 nm or less, the above-described tackiness can be easily achieved. Although the minimum of surface roughness (Ra) is not specifically limited, For example, it is 20 nm or more. The surface roughness can be measured by the method described in the examples.
- the tensile storage elastic modulus at 25 ° C. of the resin sheet 11 is preferably 10 3 MPa or less. Good tackiness is obtained when it is 10 3 MPa or less.
- the tensile storage modulus at 25 ° C. is preferably 10 ⁇ 2 MPa or more. When it is 10 ⁇ 2 MPa or more, deformation of the resin sheet 11 due to contact between the resin sheet 11 and the inner surface of the vacuum packaging container can be prevented or reduced.
- the 25 degreeC tensile storage elastic modulus can be measured by the method as described in an Example.
- the resin sheet 11 preferably contains an epoxy resin.
- the epoxy resin is not particularly limited.
- triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
- the softening point of an epoxy resin 100 degrees C or less is preferable. A tackiness can be improved as it is 100 degrees C or less. As a softening point of an epoxy resin, 80 degrees C or less is more preferable. On the other hand, the softening point of the epoxy resin is preferably 30 ° C. or higher. When it is 30 ° C. or higher, handling is good when raw materials are mixed.
- the softening point can be measured by DSC (differential scanning calorimetry). Specifically, using a differential scanning calorimeter (Q2000 manufactured by TA Instruments), the softening point from the DSC curve obtained under the conditions of a measurement temperature of ⁇ 10 ° C. to 300 ° C. and a heating rate of 5 ° C./min. Can be requested.
- DSC differential scanning calorimetry
- the epoxy equivalent of the epoxy resin is preferably 150 to 250.
- the resin sheet 11 preferably contains a phenol resin.
- the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
- a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
- These phenolic resins may be used alone or in combination of two or more.
- phenolic resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 30 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, phenol novolac from the viewpoint of high curing reactivity. Resin can be used suitably. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
- the softening point of the phenol resin is preferably 100 ° C. or lower. A tackiness can be improved as it is 100 degrees C or less. As a softening point of a phenol resin, 80 degrees C or less is more preferable. On the other hand, the softening point of the phenol resin is preferably 30 ° C. or higher. When it is 30 ° C. or higher, handling is good when raw materials are mixed.
- the total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 5% by weight or more. Adhesive strength with respect to an electronic device, a board
- the total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 20% by weight or less. If it is 20% by weight or less, the hygroscopicity can be kept low.
- the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
- the resin sheet 11 preferably contains a curing accelerator.
- the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin.
- 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z) ), 2-heptadecylimidazole (trade name; C17Z), 1,2-dimethylimidazole (trade name; 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (product) Name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1-cyanoethyl 2-Undecylimidazole (trade name; C11Z-CN),
- imidazole-based curing accelerators are preferable because 2-cur-4-4,5-dihydroxymethylimidazole is more preferable because the curing reaction at the kneading temperature can be suppressed.
- the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
- the resin sheet 11 preferably contains a thermoplastic resin (elastomer).
- Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
- MBS resin methyl methacrylate-butadiene-styrene copolymer
- the content of the thermoplastic resin in the resin sheet 11 is preferably 1% by weight or more. A softness
- the content of the thermoplastic resin in the resin sheet 11 is preferably 30% by weight or less, more preferably 15% by weight or less, and still more preferably 10% by weight or less. When it is 30% by weight or less, good adhesive force can be obtained for electronic devices and the like.
- the resin sheet 11 preferably contains an inorganic filler. By blending the inorganic filler, the thermal expansion coefficient can be reduced.
- the inorganic filler examples include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride.
- silica and alumina are preferable and silica is more preferable because the thermal expansion coefficient can be satisfactorily reduced.
- Silica is preferably fused silica and more preferably spherical fused silica because it is excellent in fluidity.
- the average particle diameter of the inorganic filler is preferably 5 ⁇ m or more. When the thickness is 5 ⁇ m or more, it is easy to obtain flexibility and flexibility of the resin sheet 11.
- the average particle diameter of the inorganic filler is preferably 50 ⁇ m or less, more preferably 30 ⁇ m or less. When it is 50 ⁇ m or less, it is easy to increase the filling rate of the inorganic filler.
- the average particle size can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
- the inorganic filler is preferably treated (pretreated) with a silane coupling agent. Thereby, the wettability with resin can be improved and the dispersibility of an inorganic filler can be improved.
- the silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.
- hydrolyzable group examples include an alkoxy group having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an acetoxy group, and a 2-methoxyethoxy group.
- a methoxy group is preferable because it easily removes volatile components such as alcohol generated by hydrolysis.
- organic functional group examples include vinyl group, epoxy group, styryl group, methacryl group, acrylic group, amino group, ureido group, mercapto group, sulfide group, and isocyanate group.
- an epoxy group is preferable because it easily reacts with an epoxy resin or a phenol resin.
- silane coupling agent examples include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane; p-styryltrimethoxysilane, etc.
- vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane
- 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyl
- Styryl group-containing silane coupling agent 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltri Methacrylic group-containing silane coupling agents such as toxisilane; Acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane; N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N Amino group-containing silane coupling agents such as phenyl-3-a
- the method for treating the inorganic filler with the silane coupling agent is not particularly limited, and is a wet method in which the inorganic filler and the silane coupling agent are mixed in a solvent, and the inorganic filler and the silane coupling agent are treated in a gas phase. And dry method.
- the treatment amount of the silane coupling agent is not particularly limited, but it is preferable to treat 0.1 to 1 part by weight of the silane coupling agent with respect to 100 parts by weight of the untreated inorganic filler.
- the content of the inorganic filler in the resin sheet 11 is preferably 60% by volume or more, and more preferably 74% by volume or more. When it is 60% by volume or more, the thermal expansion coefficient can be reduced, and the hygroscopicity can be reduced.
- the content of the inorganic filler is preferably 90% by volume or less, and more preferably 85% by volume or less. When it is 90% by volume or less, good tackiness, flexibility, fluidity, and adhesiveness can be obtained.
- the content of the inorganic filler can be explained by using “wt%” as a unit.
- the content of silica will be described in units of “% by weight”. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of the silica content (% by weight) is, for example, as follows. That is, the content of silica in the resin sheet 11 is preferably 74% by weight or more, and more preferably 84% by weight or more. 94 weight% or less is preferable and, as for content of the silica in the resin sheet 11, 91 weight% or less is more preferable.
- the preferred range of the alumina content is, for example, as follows. That is, the content of alumina in the resin sheet 11 is preferably 83% by weight or more, and more preferably 90% by weight or more. 97 weight% or less is preferable and, as for content of the alumina in the resin sheet 11, 95 weight% or less is more preferable.
- Resin sheet 11 may contain, in addition to the above components, compounding agents generally used in the production of sealing resins, for example, flame retardant components, pigments, silane coupling agents, and the like.
- the flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxide, phosphazene compounds, and the like can be used. Of these, phosphazene compounds are preferred because they are excellent in flame retardancy and strength after curing.
- the pigment is not particularly limited, and examples thereof include carbon black.
- the content of the silane coupling agent is not particularly limited, but is preferably 0.1 to 1 part by weight with respect to 100 parts by weight of the inorganic filler.
- the manufacturing method of the resin sheet 11 is not particularly limited, there is a method in which a kneaded material obtained by kneading the respective components (for example, an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and the like) is plastically processed into a sheet shape.
- a kneaded material obtained by kneading the respective components for example, an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and the like
- the inorganic filler can be highly filled and the thermal expansion coefficient can be designed low.
- a kneaded material was prepared by melting and kneading an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and the like with a known kneader such as a mixing roll, a pressure kneader, and an extruder.
- the kneaded product is plastically processed into a sheet.
- the upper limit of the temperature is preferably 140 ° C. or less, and more preferably 130 ° C. or less.
- the lower limit of the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 ° C or higher, and preferably 50 ° C or higher.
- the kneading time is preferably 1 to 30 minutes.
- the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere), and the pressure under reduced pressure conditions is, for example, 1 ⁇ 10 ⁇ 4 to 0.1 kg / cm 2 .
- the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
- the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method.
- the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
- the thickness of the resin sheet 11 is not particularly limited, but is preferably 100 ⁇ m or more, more preferably 150 ⁇ m or more. Moreover, the thickness of the resin sheet 11 becomes like this. Preferably it is 2000 micrometers or less, More preferably, it is 1000 micrometers or less. An electronic device can be favorably sealed as it is in the above-mentioned range.
- the resin sheet 11 is a single layer
- the resin sheet 11 is not limited to this, A multilayer may be sufficient.
- Resin sheet 11 is used to seal the electronic device. Especially, the resin sheet 11 can be used conveniently in order to seal the electronic device arrange
- the resin sheet 11 includes a step of disposing the resin sheet 11 on the electronic device mounted on the substrate, an electronic device mounted on the substrate, and the resin sheet 11 disposed on the electronic device in a vacuum packaging container.
- a method of manufacturing an electronic device package including a step of sealing an electronic device in a vacuum packaging container with a resin sheet 11. This method is described in International Publication WO2005 / 071731 and Japanese Patent No. 5223657.
- Electronic devices include sensors, MEMS (Micro Electro Mechanical Systems), SAW (Surface Acoustic Wave) filters and other electronic devices (hollow electronic devices); semiconductor chips, ICs (integrated circuits), semiconductors such as transistors Examples include an element, a capacitor, and a resistor. Especially, it can be used especially suitably for a SAW filter.
- the hollow structure refers to a hollow portion formed between the electronic device and the substrate when the electronic device is mounted on the substrate.
- the substrate is not particularly limited, and examples thereof include a printed wiring board, a LTCC (Low Temperature Co-fired Ceramics) substrate (low temperature co-fired ceramic substrate), a ceramic substrate, a silicon substrate, and a metal substrate.
- LTCC Low Temperature Co-fired Ceramics
- the vacuum packaging container is not particularly limited, and for example, a bag having gas barrier properties can be used. Moreover, as a vacuum packaging container, what is equipped with heat resistance is preferable, and what specifically has heat resistance which can endure the temperature at the time of thermosetting is good. Moreover, as a vacuum packaging container, what is equipped with a softness
- the vacuum packaging container include a multilayer structure having a polyester film as an outer layer and a polyethylene film having heat sealability as an inner layer (sealant layer).
- a polypropylene film or the like can also be suitably used.
- a polyimide film, a polyamide film or the like can also be suitably used.
- An intermediate layer may be provided between the outer layer and the inner layer.
- a layer having a high gas barrier property is preferable.
- an aluminum layer is preferable.
- Typical methods for sealing the electronic device with the resin sheet 11 include a method of embedding the electronic device in the resin sheet 11 and a method of covering the electronic device with the softened resin sheet 11.
- the resin sheet 11 can function as a sealing resin for protecting the electronic device and its accompanying elements from the external environment.
- Examples of the method for manufacturing an electronic device package include a first manufacturing method for sealing an electronic device after vacuum packaging and a second manufacturing method for sealing the electronic device before vacuum packaging.
- the LTCC substrate 12 on which a plurality of SAW filters 13 are mounted is prepared (see FIG. 2).
- the SAW filter 13 can be formed by dicing a piezoelectric crystal on which predetermined comb-shaped electrodes are formed by a known method.
- a known device such as a flip chip bonder or a die bonder can be used.
- the SAW filter 13 and the LTCC substrate 12 are electrically connected via protruding electrodes 13a such as bumps.
- a hollow portion 14 is maintained between the SAW filter 13 and the LTCC substrate 12 so as not to inhibit the propagation of surface acoustic waves on the surface of the SAW filter.
- the distance between the SAW filter 13 and the LTCC substrate 12 can be set as appropriate, and is generally about 15 to 50 ⁇ m.
- the resin sheet 11 is disposed on the SAW filter 13 mounted on the LTCC substrate 12 (see FIG. 3).
- a release sheet for example, the above-described support
- FIG. 5 of International Publication WO2005 / 071731 This state is shown in FIG. 5 of International Publication WO2005 / 071731.
- the vacuum packaging container 21 containing the LTCC substrate 12, the SAW filter 13 and the resin sheet 11 is placed in a sealed container, and then the inside of the sealed container is deaerated with a vacuum pump, Reduce pressure. Thereafter, the vicinity of the opening of the vacuum packaging container 21 is fused from both sides by a heat fusion heater (heat sealer) to seal the vacuum packaging container 21 (see FIG. 5). This state is shown in FIG. 3 of International Publication WO2005 / 071731.
- the opening of the vacuum packaging container 21 can be closed with a clip or the like.
- the vacuum packaging container 21 comes into close contact with the LTCC substrate 12 and the resin sheet 11 due to the pressure difference between the inside and outside of the vacuum packaging container 21.
- a method of decompressing the inside of the vacuum packaging container 21 a method in which a metal pipe connected to a vacuum pump is hermetically inserted into the opening of the vacuum packaging container 21 and the inside of the vacuum packaging container 21 is deaerated. .
- Heating process In the heating step, the resin sheet 11 is heated and softened together with the vacuum packaging container 21.
- the heating temperature is usually lower than the curing temperature of the resin sheet 11 and is, for example, 50 ° C. to 140 ° C.
- the softened resin sheet 11 enters between the SAW filters 13 mounted on the LTCC substrate 12. As a result, the SAW filter 13 is covered with the resin sheet 11.
- the vacuum packaging container 21 can be heated under a pressure higher than the inside of the vacuum packaging container 21 (for example, under atmospheric pressure). Thereby, the softened resin sheet 11 can be infiltrated between the SAW filters 13 mounted on the LTCC substrate 12 using the pressure difference between the inside and outside of the vacuum packaging container 21.
- the vacuum packaging container 21 is heated and pressurized by a heating / pressure roller or a press machine.
- the softened resin sheet 11 may be inserted between the SAW filters 13 mounted on the LTCC substrate 12.
- the vacuum packaging container 21 is pressed in a state where pressure is applied to the vacuum packaging container 21 with a pressure medium filled in the sealed container. And the resin sheet 11 is thermoset.
- the vacuum packaging container 21 can be pressurized and heated via a pressure medium, so that the shape and dimensions of the hollow portion 14 can be easily managed. Examples of the pressure medium include air, water, and oil. This state is shown in FIG. 4 of International Publication WO2005 / 071731.
- the heating temperature is, for example, 60 ° C to 150 ° C.
- the SAW filter 13 sealed with the resin sheet 11 is taken out from the vacuum packaging container 21, and the LTCC substrate 12 is divided for each SAW filter 13 (see FIGS. 6 and 7). Thereby, the SAW filter package 16 can be obtained. Examples of the division method include dicing and cut / break.
- the method of the above example has the merit that the SAW filter can be sealed under reduced pressure, so that the generation of voids can be reduced, and the method can be implemented with a simple pressure reducing device.
- thermosetting step in two steps
- a method of combining these in one step is also suitable.
- An electronic device package can be manufactured by a method including:
- the degree of vacuum in the vacuum packaging container after vacuum packaging is, for example, 500 Pa or less.
- a 1st manufacturing method originates in the process of hardening the part originating in the resin sheet 11 of the sealing body obtained by sealing an electronic device with the resin sheet 11, the resin sheet 11 of a sealing body. It further includes a step of taking out the cured body obtained by curing the portion from the vacuum packaging container, and a step of dicing the cured body.
- the step of sealing the electronic device with the resin sheet 11 for example, the electronic device mounted on the substrate and the resin sheet 11 disposed on the electronic device are heated together with the vacuum packaging container.
- the electronic device in the vacuum packaging container is sealed with the resin sheet 11 by softening the resin sheet 11 and covering the electronic device with the softened resin sheet 11.
- the part derived from the resin sheet 11 of the sealing body is cured by heating the sealing body together with the vacuum packaging container.
- the vacuum packaging container 21 is sealed and then heated, but in the second manufacturing method, the LTCC substrate 12, the SAW filter 13, and the resin sheet 11 are contained in a decompressed sealed container.
- the vacuum packaging container 21 containing is heated below the curing temperature of the resin sheet 11, and then the vacuum packaging container 21 is sealed. Thereby, when a solvent exists in the resin sheet 11, a solvent can be volatilized. This is shown in FIG. 3 of Japanese Patent No. 5223657.
- the step of disposing the resin sheet 11 on the electronic device mounted on the substrate, the electronic device mounted on the substrate, and the resin sheet disposed on the electronic device 11 is placed in a vacuum packaging container, the electronic device in the vacuum packaging container is sealed with the resin sheet 11, and the sealing body obtained by sealing the electronic device with the resin sheet 11 is vacuum packaged.
- the electronic device package can be suitably manufactured by the method including the step of performing.
- the step of sealing the electronic device with the resin sheet 11 for example, the electronic device mounted on the substrate and the resin sheet 11 disposed on the electronic device together with the vacuum packaging container in a reduced-pressure atmosphere.
- the resin sheet 11 is softened by heating, and the electronic device is covered with the softened resin sheet 11, thereby sealing the electronic device in the vacuum packaging container with the resin sheet 11.
- the second manufacturing method includes a step of curing a portion derived from the resin sheet 11 of the sealed package that has been vacuum-packed, and a curing obtained by curing a portion derived from the resin sheet 11 of the sealed body.
- the method further includes a step of removing the body from the vacuum packaging container and a step of dicing the cured body.
- the electronic device package can be suitably manufactured by a method including the step of putting the resin sheet 11 disposed on the substrate into the vacuum packaging container and the step of sealing the electronic device in the vacuum packaging container with the resin sheet 11.
- the resin sheet 11 and the inner surface of the bag are easily in contact with each other, and the resin sheet is liable to be displaced.
- Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
- Phenol resin A MEH-7851-SS (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq. Softening point 67 ° C.) manufactured by Meiwa Kasei Co., Ltd.
- Phenol resin B ND564 (Phenol novolac resin, hydroxyl group equivalent 107 g / eq.
- Softening point 60 ° C. manufactured by Showa Polymer Co., Ltd.
- Thermoplastic resin Metablene J-5800 manufactured by Mitsubishi Rayon Co., Ltd.
- MBS resin primary particle size 0.5 ⁇ m
- Inorganic filler FB-9454FC manufactured by Denki Kagaku Kogyo Co., Ltd.
- Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
- Carbon black # 20 manufactured by Mitsubishi Chemical Curing accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
- Cover film 1 MRF manufactured by Mitsubishi Plastics Co., Ltd. (thickness 50 ⁇ m, surface roughness 50 nm)
- Cover film 2 U4 manufactured by Teijin DuPont Films (thickness 50 ⁇ m, surface roughness 400 nm)
- Cover film 3 Lumirror made by Mitsui Chemicals (film with sand mat treatment, thickness 50 ⁇ m, surface roughness 200 nm)
- Examples and Comparative Examples Each component was blended according to the blending ratio shown in Table 1, and melt-kneaded in a roll kneader at 60 to 120 ° C. for 10 minutes under reduced pressure conditions (0.01 kg / cm 2 ) to prepare a kneaded product. Next, the obtained kneaded material was placed between two cover films, and the kneaded material was formed into a sheet by a flat plate pressing method to produce a resin sheet having a thickness of 200 ⁇ m.
- the surface roughness (Ra) of the resin sheet was measured based on JIS B 0601 using a non-contact three-dimensional roughness measuring apparatus (NT3300) manufactured by Veeco.
- the measurement conditions were 50 times, and the measurement values were obtained by applying a median filter to the measurement data.
- the measurement was performed 5 times while changing the measurement location, and the average value was defined as the surface roughness (Ra).
- alumina substrate and the resin sheet are placed in a vacuum packaging container (a three-sided bag for aluminum retort, white type, HA-1013H, size 100 mm ⁇ 130 mm) and vacuum packaged at 90 ° C. and 1 torr.
- the alumina substrate and the resin sheet were heated together with the vacuum packaging container at 150 ° C. for 1 hour to cure the resin sheet.
- the laminate made of the cured product of the alumina substrate and the resin sheet was taken out from the vacuum packaging container, and it was confirmed whether or not the cured product of the resin sheet was displaced from the initial position.
- the misregistration was confirmed for 30 laminates, and the number of laminates in which misalignment occurred was counted.
- the case where the ratio represented by ((number of laminated bodies in which misalignment occurred / 30 laminated bodies) ⁇ 100) was 10% or less was judged as ⁇ , and the case where it exceeded 10% was judged as x.
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Abstract
Description
図1は、実施形態1の樹脂シート11の断面模式図である。なお、樹脂シート11の両面には、ポリエチレンテレフタレート(PET)フィルムなどの支持体が設けられていてもよい。樹脂シート11からの剥離を容易に行うために、支持体には離型処理が施されていてもよい。
なお、直径25mmのプローブを用いて測定された25℃のプローブタックは、実施例に記載の方法により測定できる。
なお、表面粗さは、実施例に記載の方法により測定できる。
なお、25℃の引張貯蔵弾性率は、実施例に記載の方法により測定できる。
軟化点は、DSC(示差走査熱量測定)により測定できる。具体的には、示差走査熱量計(TAインスツルメント社製のQ2000)を用いて、測定温度-10℃~300℃、昇温速度5℃/minの条件で得られたDSC曲線から軟化点を求めることができる。
なお、平均粒子径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。
シリカは通常、比重2.2g/cm3であるので、シリカの含有量(重量%)の好適範囲は例えば以下のとおりである。
すなわち、樹脂シート11中のシリカの含有量は、74重量%以上が好ましく、84重量%以上がより好ましい。樹脂シート11中のシリカの含有量は、94重量%以下が好ましく、91重量%以下がより好ましい。
すなわち、樹脂シート11中のアルミナの含有量は、83重量%以上が好ましく、90重量%以上がより好ましい。樹脂シート11中のアルミナの含有量は、97重量%以下が好ましく、95重量%以下がより好ましい。
(SAWフィルタ搭載基板準備工程)
SAWフィルタ搭載基板準備工程では、複数のSAWフィルタ13が搭載されたLTCC基板12を準備する(図2参照)。SAWフィルタ13は、所定の櫛形電極が形成された圧電結晶を公知の方法でダイシングして個片化することにより形成できる。SAWフィルタ13のLTCC基板12への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。SAWフィルタ13とLTCC基板12とはバンプなどの突起電極13aを介して電気的に接続されている。また、SAWフィルタ13とLTCC基板12との間は、SAWフィルタ表面での表面弾性波の伝播を阻害しないように中空部14を維持するようになっている。SAWフィルタ13とLTCC基板12との間の距離は適宜設定でき、一般的には15~50μm程度である。
LTCC基板12に実装されたSAWフィルタ13上に樹脂シート11を配置する(図3参照)。なお、樹脂シート11のSAWフィルタ13と接触しない面には離型シート(例えば、上述の支持体)が設けられていてもよい。この様子は、国際公開WO2005/071731号の図5に示されている。
次いで、LTCC基板12に実装されたSAWフィルタ13及びSAWフィルタ13上の樹脂シート11を、真空包装容器21の中に入れる(図4参照)。
次いで、真空包装容器21の内部を減圧(例えば500Pa以下)した後、真空包装容器21を密封する(図5参照)。
加熱工程では、真空包装容器21ごと樹脂シート11を加熱して軟化させる。加熱温度は、通常、樹脂シート11の硬化温度未満であり、例えば50℃~140℃である。
次いで、真空包装容器21ごと樹脂シート11を加熱して、樹脂シート11を熱硬化する。
その後、樹脂シート11によって封止されたSAWフィルタ13を真空包装容器21から取り出し、LTCC基板12をSAWフィルタ13毎に分割する(図6及び図7参照)。これにより、SAWフィルタパッケージ16を得ることができる。分割方法としては、例えばダイシング、カット・ブレイクなどが挙げられる。
第1の製造方法では、真空包装容器21を密封した後、加熱する方法を示しているが、第2の製造方法では、減圧した密閉容器内で、LTCC基板12、SAWフィルタ13及び樹脂シート11が入っている真空包装容器21を樹脂シート11の硬化温度未満で加熱し、その後真空包装容器21を密封する。これにより、樹脂シート11中に溶剤が存在する場合、溶剤を揮発させることができる。この様子は、特許第5223657号公報の図3に示されている。
エポキシ樹脂:新日鐵化学(株)製のYSLV-80XY(ビスフェノールF型エポキシ樹脂、エポキン当量200g/eq.軟化点80℃)
フェノール樹脂A:明和化成社製のMEH-7851-SS(ビフェニルアラルキル骨格を有するフェノール樹脂、水酸基当量203g/eq.軟化点67℃、)
フェノール樹脂B:昭和高分子社製のND564(フェノールノボラック樹脂、水酸基当量107g/eq.軟化点60℃)
熱可塑性樹脂:三菱レイヨン社製メタブレンJ-5800(MBS樹脂、一次粒子径0.5μm)
無機充填剤:電気化学工業社製のFB-9454FC(溶融球状シリカ、平均粒子径20μm)
シランカップリング剤:信越化学社製のKBM-403(3-グリシドキシプロピルトリメトキシシラン)
カーボンブラック:三菱化学社製の#20
硬化促進剤:四国化成工業社製の2PHZ-PW(2-フェニル-4,5-ジヒドロキシメチルイミダゾール)
カバーフィルム1:三菱樹脂社製のMRF(厚み50μm、表面粗さ50nm)
カバーフィルム2:帝人ヂュポンフィルム社製のU4(厚み50μm、表面粗さ400nm)
カバーフィルム3:三井化学社製のルミラー(サンドマット処理されたフィルム、厚み50μm、表面粗さ200nm)
表1に記載の配合比に従い、各成分を配合し、ロール混練機により60~120℃、10分間、減圧条件下(0.01kg/cm2)で溶融混練し、混練物を調製した。次いで、得られた混練物を2枚のカバーフィルムの間に配置し、平板プレス法により混練物をシート状に形成して、厚さ200μmの樹脂シートを作製した。
得られた樹脂シートを用いて下記の評価を行った。結果を表1に示す。
粘弾性測定装置(ティー・エイ・インスツルメント社製のRSA-3)に25mmφ(直径25mm)のブレートを2枚装着した。2枚のプレートのうち下側のプレートに樹脂シートを両面テープで固定した後、25℃雰囲気下において上側のプレート(プローブ)を下降させることにより100gの荷重で上側のプレートを樹脂シートに押し当てた。その後、上側のプレートを上昇させることにより上側のプレートを樹脂シートから引き剥がすために必要な荷重を測定した。
樹脂シートの表面粗さ(Ra)は、JIS B 0601に基づき、Veeco社製の非接触三次元粗さ測定装置(NT3300)を用いて測定した。測定条件は、50倍とし、測定値は、測定データにMedian filterをかけて求めた。測定は、測定箇所を変更しながら5回行い、その平均値を表面粗さ(Ra)とした。
樹脂シートから、短冊状のサンプル(縦30mm×横10mm×厚み200μm)を切り出した。このサンプルについて、動的粘弾性測定装置(レオメトリクスサイエンティフィク社製のRSAIII)を用いて、引張測定モードにてチャック間距離20mm、昇温速度10℃/分、0~50℃の引張貯蔵弾性率を測定した。測定結果から、25℃の引張貯蔵弾性率を求めた。
アルミナ基板(サイズ70mm角、厚み0.25mm)上に樹脂シート(サイズ65mm角、厚み200μm)を載置した後、アルミナ基板及び樹脂シートを真空包装容器(アルミ・レトルト用三方袋、白色タイプ、HA-1013H、サイズ100mm×130mm)に入れ、90℃、1torrの条件で真空包装した。アルミナ基板及び樹脂シートを真空包装容器ごと、150℃、1時間で加熱して、樹脂シートを硬化させた。真空包装容器を室温まで放冷した後、真空包装容器からアルミナ基板及び樹脂シートの硬化物からなる積層体を取り出し、樹脂シートの硬化物が当初の位置からずれているか否かを確認した。30個の積層体について位置ずれを確認し、位置ずれが生じた積層体の個数をカウントした。
((位置ずれが生じた積層体の個数/積層体30個)×100)で表される割合が、10%以下の場合を○と判定し、10%を超える場合を×と判定した。
カバーフィルムを外した樹脂シートを実装基板に搭載する際に、指又はチャックに樹脂シートが密着することにより元のシート形状を保てない場合を「×」と判定とした。一方、元のシート形状を保てる場合を「○」と判定した。
12 LTCC基板
13 SAWフィルタ
13a 突起電極
14 中空部
18 電子デバイスパッケージ
21 真空包装容器
Claims (10)
- 直径25mmのプローブを用いて測定された25℃のプローブタックが5g~500gである電子デバイス封止用樹脂シート。
- 表面粗さ(Ra)が400nm以下である請求項1に記載の電子デバイス封止用樹脂シート。
- 無機充填剤を含み、
前記樹脂シート中の前記無機充填剤の含有量が60~90体積%である請求項1又は2に記載の電子デバイス封止用樹脂シート。 - エポキシ樹脂を含み、
前記エポキシ樹脂の軟化点が100℃以下である請求項1~3のいずれかに記載の電子デバイス封止用樹脂シート。 - 25℃における引張貯蔵弾性率が10-2MPa~103MPaである請求項1~4のいずれかに記載の電子デバイス封止用樹脂シート。
- 真空包装容器内に配置された電子デバイスを封止するために使用される請求項1~5のいずれかに記載の電子デバイス封止用樹脂シート。
- 基板に実装された電子デバイスの上に樹脂シートを配置する工程と、
前記基板に実装された前記電子デバイス及び前記電子デバイスの上に配置された前記樹脂シートを、真空包装容器に入れる工程と、
前記真空包装容器内の前記電子デバイスを前記樹脂シートで封止する工程とを含む電子デバイスパッケージの製造方法に使用される請求項1~5のいずれかに記載の電子デバイス封止用樹脂シート。 - 前記電子デバイスがSAWフィルタである請求項6又は7に記載の電子デバイス封止用樹脂シート。
- 直径25mmのプローブを用いて測定された25℃のプローブタックが5g~500gである樹脂シートで電子デバイスを封止する工程を含む電子デバイスパッケージの製造方法。
- 基板に実装された前記電子デバイスの上に前記樹脂シートを配置する工程と、
前記基板に実装された前記電子デバイス及び前記電子デバイスの上に配置された前記樹脂シートを、真空包装容器に入れる工程とをさらに含み、
前記電子デバイスを封止する工程では、前記真空包装容器内の前記電子デバイスを前記樹脂シートで封止する請求項9に記載の電子デバイスパッケージの製造方法。
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- 2014-10-03 US US15/032,105 patent/US10297470B2/en active Active
- 2014-10-03 KR KR1020167011844A patent/KR20160078364A/ko not_active Application Discontinuation
- 2014-10-03 WO PCT/JP2014/076576 patent/WO2015064304A1/ja active Application Filing
- 2014-10-14 TW TW103135530A patent/TW201523813A/zh unknown
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Also Published As
Publication number | Publication date |
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CN105684143A (zh) | 2016-06-15 |
KR20160078364A (ko) | 2016-07-04 |
CN105684143B (zh) | 2019-12-03 |
US20160269000A1 (en) | 2016-09-15 |
JP2015088514A (ja) | 2015-05-07 |
US10297470B2 (en) | 2019-05-21 |
TW201523813A (zh) | 2015-06-16 |
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