WO2015063893A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- WO2015063893A1 WO2015063893A1 PCT/JP2013/079435 JP2013079435W WO2015063893A1 WO 2015063893 A1 WO2015063893 A1 WO 2015063893A1 JP 2013079435 W JP2013079435 W JP 2013079435W WO 2015063893 A1 WO2015063893 A1 WO 2015063893A1
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- Prior art keywords
- layer
- light
- light emitting
- substrate
- emitting device
- Prior art date
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Images
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/04—Signs, boards or panels, illuminated from behind the insignia
- G09F13/08—Signs, boards or panels, illuminated from behind the insignia using both translucent and non-translucent layers
- G09F13/10—Signs, boards or panels, illuminated from behind the insignia using both translucent and non-translucent layers using transparencies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/221—Static displays, e.g. displaying permanent logos
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
- G09F2013/222—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent with LEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Definitions
- the present invention relates to a light emitting device.
- Patent Document 1 describes that a light shielding layer is provided on the light emission surface of a light emitting device in order to improve visibility.
- Patent Document 1 is a technique related to a liquid crystal panel.
- a light shielding layer is provided on the light emission surface side of the liquid crystal panel. This light shielding layer is provided with a plurality of openings for forming pixels.
- Patent Document 2 describes that a light-shielding mask is provided in an optical device using an organic EL element. Specifically, this optical device is formed by forming an organic EL element on a transparent substrate, and further sealing a surface of the transparent substrate on which the organic EL element is formed with a sealing member. The light shielding mask is formed in a region of the sealing member that overlaps the organic EL element.
- the present inventor has studied to improve the visibility of light emission from each light emitting region in a light emitting device having a plurality of light emitting regions.
- a method for improving the visibility of such a light emitting device there is a method of providing a light shielding layer in a region located between a plurality of light emitting regions on the light emission surface of the light emitting device.
- the material used for the light shielding layer often has high visible light reflectance. For this reason, when a part of light from a certain light emitting region travels obliquely toward the light shielding layer, the light is reflected by the light shielding layer.
- one of the electrodes of the organic EL element is formed of a metal electrode having high reflectivity, for example, aluminum. At least a part of the reflected light is reflected by the light emitting region adjacent to the light emitting region that is emitting light (for example, the above-described metal electrode having high reflectivity) and is emitted to the outside.
- the adjacent light emitting region is a light emitting region that does not emit light originally, when such reflection occurs, the light emitting region that does not emit light originally appears to emit light. In this case, the visibility of the light emission from each light emission area
- An example of a problem to be solved by the present invention is to improve visibility in a light emitting device that displays a predetermined pattern.
- the invention according to claim 1 is a substrate; A plurality of light emitting regions provided on the first surface side of the substrate; A light shielding layer provided on the second surface side of the substrate and positioned between the light emitting regions when viewed from a direction perpendicular to the substrate; With The light shielding layer is The first layer; A second layer located closer to the substrate than the first layer in the thickness direction; Have The second layer has a lower reflectance than the first layer, When viewed from a direction perpendicular to the substrate, the end portion of the first layer is a light emitting device positioned more inside the light shielding layer than the end portion of the second layer.
- the invention according to claim 4 is a substrate; A plurality of light emitting regions provided on the first surface side of the substrate; A light shielding layer provided on the second surface side of the substrate and positioned between the light emitting regions when viewed from a direction perpendicular to the substrate; With The light shielding layer is The first layer; A second layer located closer to the substrate than the first layer; A third layer covering at least a part of an end of the second layer; Have The second layer and the third layer are light emitting devices having a lower reflectance than the first layer.
- FIG. 2 is a cross-sectional view taken along the line AA in FIG. It is a figure which shows the modification of FIG. It is sectional drawing for demonstrating the formation method of a light shielding layer. It is sectional drawing for demonstrating the formation method of a light shielding layer. It is sectional drawing which shows the structure of the light-emitting device which concerns on a comparative example. It is sectional drawing for demonstrating the function of the light absorption layer in the light-emitting device which concerns on 1st Embodiment. It is sectional drawing of the light-emitting device which concerns on 2nd Embodiment.
- FIG. 1 is a plan view of a light emitting device 10 according to the first embodiment.
- FIG. 2 is a cross-sectional view taken along the line AA in FIG.
- the light emitting device 10 is used for displaying characters, symbols, and the like in an optical device, for example, and includes a substrate 100, a plurality of light emitting regions 101, and a light shielding layer 200.
- the plurality of light emitting regions 101 are provided on the first surface (for example, the lower surface in FIG. 2) side of the substrate 100.
- the light shielding layer 200 is provided on the second surface side of the substrate 100 (for example, the upper surface in FIG. 2). As shown in FIG.
- the light shielding layer 200 is located between the plurality of light emitting regions 101 when viewed from a direction perpendicular to the substrate 100.
- the light shielding layer 200 includes a light reflection layer 202 (first layer) and a light absorption layer 204 (second layer).
- the light absorption layer 204 is positioned closer to the substrate 100 than the light reflection layer 202 in the thickness direction, and has a light reflectance lower than that of the light reflection layer 202.
- a preferable example of the light absorption layer 204 is a layer that absorbs light, and does not include a transparent layer. Further, when viewed from a direction perpendicular to the substrate 100, the end of the light reflecting layer 202 is positioned inside the light shielding layer 200 with respect to the end of the light absorbing layer 204. Details will be described below.
- the substrate 100 is made of a material that is transparent to the light emitted from the light emitting region 101.
- the substrate 100 may be a glass substrate or a resin substrate.
- the substrate 100 has flexibility.
- the thickness of the substrate 100 is, for example, not less than 300 ⁇ m and not more than 600 ⁇ m.
- the light emitting region 101 for example, light emitting elements independent of each other are formed.
- This light emitting element is, for example, an organic EL element, but may be another self-light emitting element such as an LED.
- the light emitting region 101 has different planar shapes (for example, letters, numbers, and / or symbols).
- the light shielding layer 200 is a laminate of a plurality of layers.
- the plurality of layers include a light reflecting layer 202 and a light absorbing layer 204.
- the light shielding layer 200 has a configuration in which a light absorption layer 204 and a light reflection layer 202 are laminated in this order on the second surface side of the substrate 100.
- the light reflecting layer 202 has a function of blocking visible light (for example, light emitted from the light emitting region 101).
- the light reflecting layer 202 is made of, for example, a metal such as Cr, and the thickness thereof is, for example, not less than 50 nm and not more than 200 nm.
- the light absorption layer 204 is formed of a material whose reflectance of light emitted from the light emitting region 101 is lower than that of the light reflection layer 202.
- the light absorption layer 204 is formed of an oxide (for example, chromium oxide) of the metal.
- the light absorption layer 204 is formed thinner than the light reflection layer 202.
- the thickness of the light absorption layer 204 is, for example, 30 nm or more and 70 nm or less.
- the thickness of the light absorption layer 204 is, for example, equal to or less than the thickness of the light reflection layer 202. However, the thickness of the light absorption layer 204 may be equal to or greater than the thickness of the light reflection layer 202.
- the light shielding layer 200 is located between the light emitting regions 101 when viewed from the direction perpendicular to the substrate 100.
- the light shielding layer 200 has a plurality of openings 210.
- the plurality of openings 210 overlap with different light emitting regions 101 and have the same shape as the overlapping light emitting regions 101. For this reason, by providing the light shielding layer 200, the edge of the pattern indicated by the light emission of the light emitting region 101 becomes sharp. Thereby, the visibility of the pattern which the light-emitting device 10 shows improves.
- the end of the light reflecting layer 202 is positioned inside the light shielding layer 200 with respect to the end of the light absorbing layer 204.
- the outline of the opening 210 is defined by the end of the light absorption layer 204.
- the width of the light reflection layer 202 is smaller than the width of the light absorption layer 204.
- the distance from the edge part of the light reflection layer 202 to the edge part of the light absorption layer 204 is 200 nm or more and 500 nm or less, for example.
- the thickness of the light shielding layer 200 is t
- the distance from the end of the light reflecting layer 202 to the end of the light absorbing layer 204 is, for example, 3 t or less.
- each of the openings 210 may be slightly smaller than the light emitting region 101.
- the edge of the opening 210 is located inside the light emitting region 101. In this way, even if a positional shift occurs between the light emitting region 101 and the light shielding layer 200, the edge of the light shielding layer 200 overlaps the light emitting region 101, and thus the visibility of the light emitting device 10 does not deteriorate.
- the width of the portion where the light shielding layer 200 and the light emitting region 101 overlap is, for example, 5 ⁇ m or more and 40 ⁇ m or less.
- each of the openings 210 may be slightly larger than the light emitting region 101.
- the distance from the end of the light shielding layer 200 to the end of the light emitting region 101 is, for example, not less than 0.5 ⁇ m and not more than 50 ⁇ m. In this case, the light from the light emitting device 10 can be recognized even when the light emitting device 10 is viewed from a slight angle.
- FIG. 4 and 5 are cross-sectional views for explaining a method of forming the light shielding layer 200.
- a light absorption layer 204 is formed on the substrate 100.
- the light absorption layer 204 is formed by using a vapor deposition method such as sputtering, vapor deposition, or CVD.
- a mask pattern (for example, a resist pattern: not shown) is formed on the light absorption layer 204, and the light absorption layer 204 is etched through the mask pattern.
- the etching performed here is, for example, wet etching, but may be dry etching. Thereby, unnecessary portions of the light absorption layer 204 are removed.
- the mask pattern is removed.
- a light reflecting layer 202 is formed on the light absorbing layer 204 and on the substrate 100.
- the light absorption layer 204 and the light reflection layer 202 are formed using a vapor deposition method such as sputtering, vapor deposition, or CVD.
- a mask pattern (for example, a resist pattern: not shown) is formed on the light reflecting layer 202, and the light reflecting layer 202 is etched using the mask pattern as a mask.
- the etching performed here is, for example, wet etching, but may be dry etching. Thereby, unnecessary portions of the light reflecting layer 202 are removed.
- FIG. 6 is a diagram illustrating a configuration of the light emitting device 10 according to the comparative example, and corresponds to FIG. 2 in the embodiment.
- the light emitting device 10 has the same configuration as that of the light emitting device 10 according to the embodiment except that the light shielding layer 200 does not include the light absorbing layer 204.
- a certain light emitting region 101a (the left light emitting region 101 in FIG. 6) emits light and the adjacent light emitting region 101b (the right light emitting region 101 in FIG. 6) does not emit light.
- light emitted from a light emitting element spreads at a certain angle.
- part of the light emitted from the light emitting region 101 a is reflected by the light reflecting layer 202, further reflected by the light emitting region 101 b, and then emitted to the outside of the light emitting device 10.
- the light emitting area 101b is not emitting light, the light emitting area 101b appears to be slightly illuminated. In this case, the visibility of the light emitting device 10 is reduced.
- the light absorption layer 204 is formed on the surface of the light shielding layer 200 facing the substrate 100.
- the light absorption layer 204 has a lower light reflectance than the light reflection layer 202. Therefore, as shown in FIG. 7, even when a part of the light emitted from the light emitting region 101a is incident on the light shielding layer 200, the light reflected from the light shielding layer 200 toward the light emitting region 101b is reduced, or almost Disappear. Therefore, the visibility of the light emitting device 10 is improved.
- the end of the light reflecting layer 202 when viewed from the direction perpendicular to the substrate 100, the end of the light reflecting layer 202 is farther from the light emitting region 101 than the end of the light reflecting layer 202.
- the light absorbing layer 204 When viewed from the light emitting region 101, at least a part of the end face of the light reflecting layer 202 is covered with the light absorbing layer 204. Therefore, the light emitted from the light emitting region 101 can be suppressed from being reflected by the end face of the light reflecting layer 202. This effect increases as the distance between the end of the light reflecting layer 202 and the end of the light absorbing layer 204 increases.
- FIG. 8 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to the second embodiment, and corresponds to FIG. 2 in the first embodiment.
- the light emitting device 10 according to the present embodiment has the same configuration as that of the light emitting device 10 according to the first embodiment, except that the light shielding layer 200 includes a light absorption layer 206 (third layer).
- the light absorption layer 206 is located on the opposite side of the substrate 100 with the light reflection layer 202 (first layer) interposed therebetween.
- the light shielding layer 200 has a configuration in which the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are stacked in this order.
- the light absorption layer 206 has a lower reflectance than the light reflection layer 202.
- the end of the light reflecting layer 202 is located inside the light shielding layer 200 with respect to the end of the light absorbing layer 206.
- the light absorption layer 206 is formed of the same material as the light absorption layer 204.
- the light absorption layer 204 is formed of an oxide (for example, chromium oxide) of the metal.
- the light absorption layer 206 is formed thinner than the light reflection layer 202.
- the thickness of the light absorption layer 206 is, for example, equal to or less than the thickness of the light reflection layer 202. However, the thickness of the light absorption layer 206 may be equal to or greater than the thickness of the light reflection layer 202.
- FIG. 9 is a cross-sectional view for explaining the manufacturing method of the light shielding layer 200 according to the present embodiment.
- the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are formed in this order on the substrate 100.
- the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are formed by using a vapor deposition method such as sputtering, vapor deposition, or CVD. Note that in the case where the light absorption layers 204 and 206 are formed of a metal oxide that forms the light reflection layer 202, the light reflection layer 202 and the light absorption layers 204 and 206 are preferably formed in the same processing chamber. .
- film formation is performed while introducing an oxidizing agent (for example, oxygen gas) into the processing chamber, and then film formation is performed by stopping the introduction of the oxidizing agent while continuing the film formation.
- an oxidizing agent for example, oxygen gas
- a mask pattern (for example, a resist pattern: not shown) is formed on the light absorption layer 206, and the light absorption layer 206 and the light reflection layer 202 are formed through this mask pattern. And the light absorption layer 204 are etched.
- the etching performed here is, for example, wet etching, but may be dry etching. Thereby, unnecessary portions of the light absorption layer 204 are removed.
- the etching conditions at this time are set so that the etching rate of the light reflection layer 202 is higher than the etching rates of the light absorption layer 204 and the light absorption layer 206.
- the end of the light reflecting layer 202 is positioned inside the light shielding layer 200 with respect to the ends of the light absorbing layer 204 and the light absorbing layer 206. Thereafter, the mask pattern is removed.
- the end portions of the light reflecting layer 202 when viewed from a direction perpendicular to the substrate as shown in FIG. 8, are the light absorbing layer 204 (second layer) and the light absorbing layer 206. It comes to be located inside the light shielding layer 200 from the end of the (third layer).
- the light emitted from the light emitting region 101 can be prevented from being reflected by the end face of the light reflecting layer 202, and thus the visibility of the light emitting device 10 is improved. .
- the light absorption layer 206 is formed on the upper surface of the light reflection layer 202, it is possible to suppress the light incident on the light emitting device 10 from the outside of the light emitting device 10 from being reflected by the light reflecting layer 202. For this reason, the visibility of the light emitting device 10 is further improved.
- the end of the light absorption layer 206 may be deformed by its own weight and positioned on the light absorption layer 204. In this case, at least a part of the end portion of the light reflection layer 202 is covered with the light absorption layer 206. In this case, the light emitted from the light emitting region 101 can be further suppressed from being reflected by the end face of the light reflecting layer 202. In particular, as shown in this figure, when a part of the light absorption layer 206 is positioned on the light absorption layer 204, the entire end portion of the light reflection layer 202 is covered with the light absorption layer 206. It can further suppress that the emitted light is reflected by the end surface of the light reflection layer 202.
- the light absorbing layer 206 may be formed only on the side surface of the light reflecting layer 202 when it is conscious of suppressing the light from the light emitting region 101 from being reflected by the end face of the light absorbing layer 206.
- FIG. 11 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to the embodiment.
- the light-emitting device 10 according to the present example has the same configuration as the light-emitting device 10 shown in the second embodiment except for the following points.
- the light emitting region 101 is formed of an organic EL element. Specifically, the light emitting region 101 includes a first electrode 110, an organic layer 120, and a second electrode 130. Note that another layer may be formed between the layers.
- the first electrode 110 is formed of a translucent conductive material, for example, an inorganic material such as ITO (Indium Thin Oxide) or IZO (Indium Zinc Oxide), or a conductive polymer such as a polythiophene derivative.
- the second electrode 130 is made of a material that reflects light, for example, a metal such as an Al electrode.
- the organic layer 120 is formed by stacking, for example, a hole transport layer, a light emitting layer, and an electron transport layer.
- the hole transport layer is in contact with the first electrode 110
- the electron transport layer is in contact with the second electrode 130. In this way, the organic layer 120 is sandwiched between the first electrode 110 and the second electrode 130.
- the material of the organic layer 120 for example, the material of the light emitting layer, the color of light emitted from the light emitting region 101 can be changed to a desired color.
- a hole injection layer may be formed between the first electrode 110 and the hole transport layer, and an electron injection layer may be formed between the second electrode 130 and the electron transport layer. . Also, not all of the above layers are necessary. For example, when recombination of holes and electrons occurs in the electron transport layer, the light-emitting layer is unnecessary because the electron transport layer also functions as the light-emitting layer.
- at least one of the first electrode 110, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, and the second electrode 130 is formed using a coating method such as an inkjet method. May be. Further, an electron injection layer made of an inorganic material such as LiF may be provided between the organic layer 120 and the second electrode 130.
- the second electrode 130 is also formed between the adjacent light emitting regions 101 when viewed from a direction perpendicular to the substrate 100. That is, the first electrode 110 and the organic layer 120 are patterned for each light emitting region 101, but the second electrode 130 is a common electrode among the plurality of first electrodes 110.
- an insulating layer 102 is formed between adjacent light emitting regions 101.
- the first electrode 110 and the organic layer 120 are formed between the adjacent insulating layers 102.
- a part of the organic layer 120 may protrude onto the insulating layer 102.
- the second electrode 130 is continuously formed on the organic layer 120 and the insulating layer 102.
- the insulating layer 102 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by exposure and development.
- a positive photosensitive resin is used as the insulating layer 102.
- the insulating layer 102 may be a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.
- the organic layer 120 and the second electrode 130 are formed in this order after the insulating layer 102 is formed.
- the polarizing layer 300 is formed on the surface of the substrate 100 where the light shielding layer 200 is formed.
- the polarizing layer 300 covers the light shielding layer 200.
- the polarizing layer 300 is provided in order to prevent external light incident on the light emitting region from being reflected by the second electrode 130 or from being reflected from the upper surface of the light shielding layer 200. That is, the appearance quality of the light emitting device 10 when the light emitting device 10 is not lit can be improved.
- the thickness of the light shielding layer 200 is preferably 200 nm or less. This is because when the thickness of the light shielding layer 200 is increased, bubbles or the like are involved when the polarizing layer 300 is attached to the substrate 100, and the appearance quality is deteriorated.
- a coating film 220 is formed on the surface of the light reflection layer 202 of the light shielding layer 200 opposite to the light absorption layer 204.
- the coating film 220 is formed of, for example, a resin such as a resist or an inorganic material such as silicon oxide. In the example shown in this drawing, the coating film 220 is formed on the light absorption layer 206.
- the substrate 100 may be transported with the second surface side facing down. In this case, the coating film 220 is provided so that the light shielding layer 200 is not damaged.
- FIG. 12 to 14 are diagrams for explaining a method of manufacturing the light emitting device 10 according to the present embodiment.
- the first electrode 110 is formed on the surface of the substrate 100 where the light emitting region 101 is formed.
- the first electrode 110 is not patterned.
- the first electrode 110 is formed using, for example, a vapor deposition method, a sputtering method, or a CVD method.
- the light absorption layer 204, the light reflection layer 202, and the light absorption layer 206 are provided on the surface of the substrate 100 opposite to the surface on which the first electrode 110 is formed. They are formed in this order.
- a coating film 220 is formed on the light absorption layer 206.
- the coating film 220 is formed using, for example, a coating method.
- the light shielding layer 200 and the coating film 220 are patterned to form an opening 210.
- the end portion of the light reflecting layer 202 is located inside the light reflecting layer 202 with respect to the end portions of the light absorbing layer 204 and the light absorbing layer 206 as described in the second embodiment.
- the first electrode 110 is patterned. This process is performed, for example, by forming a resist pattern on the first electrode 110 and etching the first electrode 110 using the resist pattern as a mask. At this time, since the transport surface is the light shielding layer 200, the light shielding layer 200 is easily damaged. In contrast, in this embodiment, a coating film 220 is provided on the surface of the light shielding layer 200 opposite to the substrate 100. For this reason, it can suppress that the light shielding layer 200 is damaged.
- an insulating layer 102 is formed, and the insulating layer 102 is patterned.
- the insulating layer 102 is formed of a photosensitive material, the insulating layer 102 is patterned by exposure and development.
- an organic layer 120 is formed.
- Each layer constituting the organic layer 120 may be formed using a vapor deposition method, or may be formed using a coating method such as spray coating, dispenser coating, ink jetting, or printing. Further, at least one of the plurality of layers constituting the organic layer 120 may be formed by a method different from the other layers.
- the second electrode 130 is formed on the organic layer 120.
- the second electrode 130 is formed using, for example, a vapor deposition method, a sputtering method, or a CVD method. Thereafter, the polarizing layer 300 is formed.
- the second electrode 130 is also formed in a region located between the light emitting regions 101 when viewed from a direction perpendicular to the substrate 100. For this reason, when the light reflection layer 202 reflects the light from the organic layer 120, the probability that this reflected light will be reflected by the 2nd electrode 130 will become high. In this case, the visibility of the light emitting device 10 is particularly likely to decrease.
- a light absorbing layer 204 is formed on the surface of the light reflecting layer 202 facing the substrate 100. Therefore, even if the second electrode 130 is formed between the adjacent light emitting regions 101, it is possible to suppress the visibility of the light emitting device 10 from being lowered.
- the configuration of the light shielding layer 200 may be the same as that of the first embodiment.
Abstract
Description
前記基板の第1面側に設けられた複数の発光領域と、
前記基板の第2面側に設けられ、前記基板に垂直な方向から見た場合において前記複数の発光領域の間に位置する遮光層と、
を備え、
前記遮光層は、
第1層と、
厚さ方向において前記第1層よりも前記基板側に位置する第2層と、
を有し、
前記第2層は、前記第1層よりも反射率が低く、
前記基板に垂直な方向から見た場合において、前記第1層の端部は、前記第2層の端部よりも、前記遮光層の内側に位置している発光装置である。
前記基板の第1面側に設けられた複数の発光領域と、
前記基板の第2面側に設けられ、前記基板に垂直な方向から見た場合において前記複数の発光領域の間に位置する遮光層と、
を備え、
前記遮光層は、
第1層と、
前記第1層よりも前記基板側に位置する第2層と、
前記第2層の端部の少なくとも一部を覆う第3層と、
を有し、
前記第2層及び前記第3層は、前記第1層よりも反射率が低い発光装置である。
図1は、第1の実施形態に係る発光装置10の平面図である。図2は、図1のA-A断面図である。発光装置10は、例えば光学装置において文字や記号等を表示するために用いられ、基板100、複数の発光領域101、及び遮光層200を備えている。複数の発光領域101は、基板100の第1面(例えば図2の下側の面)側に設けられている。遮光層200は、基板100の第2面側(例えば図2の上側の面)に設けられている。そして図2に示すように、遮光層200は、基板100に垂直な方向から見た場合において、複数の発光領域101の間に位置している。遮光層200は、光反射層202(第1層)及び光吸収層204(第2層)を有している。光吸収層204は、厚さ方向において光反射層202よりも基板100側に位置しており、光反射層202よりも光の反射率が低い。光吸収層204の好ましい例として、光を吸収する層であり、透明な層は含まない。さらに、基板100に垂直な方向から見た場合において、光反射層202の端部は、光吸収層204の端部よりも、遮光層200の内側に位置している。以下、詳細に説明する。
図8は、第2の実施形態に係る発光装置10の構成を示す断面図であり、第1の実施形態における図2に対応している。本実施形態に係る発光装置10は、遮光層200が光吸収層206(第3層)を備えている点を除いて、第1の実施形態に係る発光装置10と同様の構成である。
Claims (9)
- 基板と、
前記基板の第1面側に設けられた複数の発光領域と、
前記基板の第2面側に設けられ、前記基板に垂直な方向から見た場合において前記複数の発光領域の間に位置する遮光層と、
を備え、
前記遮光層は、
第1層と、
厚さ方向において前記第1層よりも前記基板側に位置する第2層と、
を有し、
前記第2層は、前記第1層よりも反射率が低く、
前記基板に垂直な方向から見た場合において、前記第1層の端部は、前記第2層の端部よりも、前記遮光層の内側に位置している発光装置。 - 請求項1に記載の発光装置において、
前記第1層を挟んで前記基板の逆側に位置する第3層を備え、
前記第3層は、前記第1層よりも反射率が低く、
前記基板に垂直な方向から見た場合において、前記第1層の端部は、前記第3層の端部よりも、前記遮光層の内側に位置している発光装置。 - 請求項2に記載の発光装置において、
前記第1層は金属により形成されており、
前記第2層は、前記金属の酸化物によって形成されている発光装置。 - 基板と、
前記基板の第1面側に設けられた複数の発光領域と、
前記基板の第2面側に設けられ、前記基板に垂直な方向から見た場合において前記複数の発光領域の間に位置する遮光層と、
を備え、
前記遮光層は、
第1層と、
前記第1層よりも前記基板側に位置する第2層と、
前記第2層の端部の少なくとも一部を覆う第3層と、
を有し、
前記第2層及び前記第3層は、前記第1層よりも反射率が低い発光装置。 - 請求項4に記載の発光装置において、
前記第3層の一部は、前記第1層の上に位置している発光装置。 - 請求項5に記載の発光装置において、
前記第1層は、前記第2層と前記第3層に挟まれており、かつ、前記基板に垂直な方向から見た場合において、前記第1層の端部は、前記第2層の端部及び前記第3層の端部よりも、前記遮光層の内側に位置している発光装置。 - 請求項6に記載の発光装置において、
前記第1層は金属により形成されており、
前記第2層及び前記第3層は、前記金属の酸化物によって形成されている発光装置。 - 請求項3又は7に記載の発光装置において、
前記複数の発光領域は、それぞれ、
第1電極と、
前記第1電極を介して前記基板とは逆側に設けられた第2電極と、
前記第1電極と前記第2電極の間に位置する有機層と、
を備える発光装置。 - 請求項8に記載の発光装置において、
前記基板に垂直な方向から見た場合において、前記第2電極は、前記複数の発光領域の間に位置する領域にも形成されている発光装置。
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JP2015544699A JP6208250B2 (ja) | 2013-10-30 | 2013-10-30 | 発光装置 |
PCT/JP2013/079435 WO2015063893A1 (ja) | 2013-10-30 | 2013-10-30 | 発光装置 |
US15/033,591 US9875672B2 (en) | 2013-10-30 | 2013-10-30 | Light-emitting device |
US15/848,858 US20180190164A1 (en) | 2013-10-30 | 2017-12-20 | Light-emitting device |
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PCT/JP2013/079435 WO2015063893A1 (ja) | 2013-10-30 | 2013-10-30 | 発光装置 |
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US15/033,591 A-371-Of-International US9875672B2 (en) | 2013-10-30 | 2013-10-30 | Light-emitting device |
US15/848,858 Continuation US20180190164A1 (en) | 2013-10-30 | 2017-12-20 | Light-emitting device |
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WO2015063893A1 true WO2015063893A1 (ja) | 2015-05-07 |
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JP6208250B2 (ja) * | 2013-10-30 | 2017-10-04 | パイオニア株式会社 | 発光装置 |
KR20200063591A (ko) * | 2018-11-28 | 2020-06-05 | 엘지디스플레이 주식회사 | 디스플레이장치 |
KR102555412B1 (ko) | 2018-12-14 | 2023-07-13 | 엘지디스플레이 주식회사 | 발광 소자를 포함하는 디스플레이 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11209884A (ja) * | 1998-01-23 | 1999-08-03 | Asahi Glass Co Ltd | 遮光層付き基板の製造方法及びカラーフィルタ基板の製造方法 |
JPH11297479A (ja) * | 1995-04-25 | 1999-10-29 | Citizen Watch Co Ltd | 有機エレクトロルミネセンス装置 |
JPH11345688A (ja) * | 1998-06-01 | 1999-12-14 | Tdk Corp | 有機elディスプレイ |
JP2006208977A (ja) * | 2005-01-31 | 2006-08-10 | Nippon Seiki Co Ltd | 表示装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69626808T2 (de) * | 1995-04-25 | 2003-09-11 | Citizen Watch Co Ltd | Organische elektrolumineszente vorrichtung |
JP2005122101A (ja) | 2003-09-25 | 2005-05-12 | Seiko Epson Corp | 電気光学装置 |
JP2008129042A (ja) | 2006-11-16 | 2008-06-05 | Pentax Corp | ファインダー装置 |
JP2008181730A (ja) * | 2007-01-24 | 2008-08-07 | Seiko Epson Corp | 発光装置及び電子機器 |
KR20140060058A (ko) * | 2012-11-09 | 2014-05-19 | 삼성디스플레이 주식회사 | 편광판, 편광판의 제조방법 및 이를 포함하는 표시장치 |
US20160204383A1 (en) * | 2013-09-11 | 2016-07-14 | Pioneer Corporation | Light emitting device |
JP6208250B2 (ja) * | 2013-10-30 | 2017-10-04 | パイオニア株式会社 | 発光装置 |
-
2013
- 2013-10-30 JP JP2015544699A patent/JP6208250B2/ja active Active
- 2013-10-30 WO PCT/JP2013/079435 patent/WO2015063893A1/ja active Application Filing
- 2013-10-30 US US15/033,591 patent/US9875672B2/en active Active
-
2017
- 2017-12-20 US US15/848,858 patent/US20180190164A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11297479A (ja) * | 1995-04-25 | 1999-10-29 | Citizen Watch Co Ltd | 有機エレクトロルミネセンス装置 |
JPH11209884A (ja) * | 1998-01-23 | 1999-08-03 | Asahi Glass Co Ltd | 遮光層付き基板の製造方法及びカラーフィルタ基板の製造方法 |
JPH11345688A (ja) * | 1998-06-01 | 1999-12-14 | Tdk Corp | 有機elディスプレイ |
JP2006208977A (ja) * | 2005-01-31 | 2006-08-10 | Nippon Seiki Co Ltd | 表示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019106332A (ja) * | 2017-12-14 | 2019-06-27 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンスデバイス、その製造方法及び表示装置 |
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US20160284250A1 (en) | 2016-09-29 |
JP6208250B2 (ja) | 2017-10-04 |
US20180190164A1 (en) | 2018-07-05 |
US9875672B2 (en) | 2018-01-23 |
JPWO2015063893A1 (ja) | 2017-03-09 |
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