WO2015048059A1 - Pixel architecture for imaging devices - Google Patents

Pixel architecture for imaging devices Download PDF

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Publication number
WO2015048059A1
WO2015048059A1 PCT/US2014/057107 US2014057107W WO2015048059A1 WO 2015048059 A1 WO2015048059 A1 WO 2015048059A1 US 2014057107 W US2014057107 W US 2014057107W WO 2015048059 A1 WO2015048059 A1 WO 2015048059A1
Authority
WO
WIPO (PCT)
Prior art keywords
signal
detector
current mirror
imaging apparatus
detector pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2014/057107
Other languages
English (en)
French (fr)
Inventor
Ivan Mollov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Medical Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Medical Systems Inc filed Critical Varian Medical Systems Inc
Priority to JP2016517310A priority Critical patent/JP6348578B2/ja
Priority to CN201480050646.9A priority patent/CN105594199B/zh
Priority to DE112014004420.2T priority patent/DE112014004420T5/de
Publication of WO2015048059A1 publication Critical patent/WO2015048059A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits

Definitions

  • Embodiments of this disclosure relate to imaging devices and methods.
  • various embodiments of pixel architectures for imaging devices are described.
  • FIG. 3 illustrates a pixel architecture of a prior art digital imaging device
  • the electric charge generated in the detector element 202 as a result of incident radiation is passed into the current mirror 204 and amplified by a suitable gain factor.
  • the amplified current l m is integrated on the capacitor 206.
  • the signal amplification and integration is continuous, including during the x-ray exposure.
  • the transistor 208 is turned ON via a row select line 212 and the charge integrated on the storage capacitor 206 is passed through the transistor 208 to an external charge amplifier via a data line 214.
  • the gained signal can be read-out from the storage capacitor 206 independent from the integration.
  • the current integrated on the external charge amplifier is l m which is k times of the current l d generated by the detector element 202. Reading out the charge resets the capacitor 206 and the pixel 200 is ready for the next Integration.
  • FIGS. 8-12 illustrate some exemplary current mirror circuits that can be implemented in the detector pixels according to embodiments of this disclosure. It should be noted that other current mirror circuits known in the art can be used. This disclosure is not limited to the particular current mirror circuits described herein.
  • FIG. 13 illustrates an electrical circuit of a detector pixel 150 according to some alternative embodiments of this disclosure.
  • the detector pixel 150 shown in FIG. 13 is similar to the detector pixel 100 shown in FIG. 4 in many aspects.
  • the detector pixel 150 includes a detector element 102, a current mirror 104, and a switching transistor 106.
  • the detector pixel 150 shown in FIG. 13 further includes a switch 116 connected to the current mirror 104.
  • the switch 1 16 may be a transistor switch controlled by a global select signal (SEL).
  • the switch 1 16 may turn on or turn off the current mirror 104 by applying a global select signal (SEL).

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
PCT/US2014/057107 2013-09-26 2014-09-24 Pixel architecture for imaging devices Ceased WO2015048059A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016517310A JP6348578B2 (ja) 2013-09-26 2014-09-24 撮像素子のための画素アーキテクチャ
CN201480050646.9A CN105594199B (zh) 2013-09-26 2014-09-24 用于成像设备的像素架构
DE112014004420.2T DE112014004420T5 (de) 2013-09-26 2014-09-24 Pixelarchitektur für Bildgebungsvorrichtungen

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361882840P 2013-09-26 2013-09-26
US61/882,840 2013-09-26
US14/474,660 2014-09-02
US14/474,660 US9500752B2 (en) 2013-09-26 2014-09-02 Pixel architecture for imaging devices

Publications (1)

Publication Number Publication Date
WO2015048059A1 true WO2015048059A1 (en) 2015-04-02

Family

ID=52690939

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/057107 Ceased WO2015048059A1 (en) 2013-09-26 2014-09-24 Pixel architecture for imaging devices

Country Status (5)

Country Link
US (1) US9500752B2 (enExample)
JP (1) JP6348578B2 (enExample)
CN (1) CN105594199B (enExample)
DE (1) DE112014004420T5 (enExample)
WO (1) WO2015048059A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11971306B2 (en) 2020-02-10 2024-04-30 Mitsubishi Electric Corporation Infrared detecting device

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US9686490B2 (en) * 2014-04-01 2017-06-20 Sensors Unlimited, Inc. Integrating pixels and methods of operation
DE102016212765A1 (de) * 2016-07-13 2018-01-18 Robert Bosch Gmbh Pixeleinheit für einen Bildsensor, Bildsensor, Verfahren zum Sensieren eines Lichtsignals, Verfahren zum Ansteuern einer Pixeleinheit und Verfahren zum Generieren eines Bildes unter Verwendung einer Pixeleinheit
US10032264B2 (en) * 2016-07-15 2018-07-24 H3D, Inc. Reduction of background interference in a radiation image
CN109474795A (zh) * 2018-10-31 2019-03-15 天津大学 一种基于跨导单元的低噪声像素电路结构
CN109655877B (zh) 2019-01-04 2020-12-01 京东方科技集团股份有限公司 平板探测器的像素结构、平板探测器及摄像系统
CN110518816B (zh) * 2019-08-14 2021-05-07 三峡大学 一种输入端口数可调的模块化高增益整流电路
CN114864609A (zh) * 2021-01-20 2022-08-05 京东方科技集团股份有限公司 有源像素传感器及平板探测器

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US20130070134A1 (en) * 2011-09-16 2013-03-21 Boyd Fowler Low Noise CMOS Pixel Array

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JP3734717B2 (ja) * 2001-04-26 2006-01-11 富士通株式会社 イメージセンサ
GB0201260D0 (en) * 2002-01-21 2002-03-06 Europ Org For Nuclear Research A sensing and imaging device
JP4252247B2 (ja) * 2002-02-28 2009-04-08 富士通マイクロエレクトロニクス株式会社 感度を上げることができるｃｍｏｓイメージセンサ
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FR2866180B1 (fr) * 2004-02-06 2006-06-23 St Microelectronics Sa Procede de traitement des informations delivrees par une matrice de pixels actifs d'un capteur offrant une dynamique et un gain etendus, et capteur correspondant.
PT103370B (pt) * 2005-10-20 2009-01-19 Univ Do Minho Matriz de imagem de raios-x com guias de luz e sensores de pixel inteligentes, dispositivos detectores de radiação ou de partículas de alta energia que a contém, seu processo de fabrico e sua utilização
FR2965440B1 (fr) * 2010-09-29 2013-08-23 Commissariat Energie Atomique Dispositif d'imagerie a chute ohmique nulle dans un bus de donnee
JP5764468B2 (ja) * 2010-11-26 2015-08-19 富士フイルム株式会社 放射線画像検出装置、及び放射線画像撮影システム
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Publication number Priority date Publication date Assignee Title
US20050174612A1 (en) * 2001-09-20 2005-08-11 Sony Corporation Solid-state image pickup apparatus and control method thereof
EP1456860B1 (en) * 2001-11-22 2011-01-12 Silverbrook Research Pty. Limited Active pixel sensor
JP2008527345A (ja) * 2005-01-06 2008-07-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電流増幅器を実装された画素
US20120006973A1 (en) * 2010-07-06 2012-01-12 Stmicroelectronics (Research & Development) Limited Image sensor with sample and hold circuitry for addressing time variant noise
US20130070134A1 (en) * 2011-09-16 2013-03-21 Boyd Fowler Low Noise CMOS Pixel Array

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11971306B2 (en) 2020-02-10 2024-04-30 Mitsubishi Electric Corporation Infrared detecting device

Also Published As

Publication number Publication date
CN105594199A (zh) 2016-05-18
DE112014004420T5 (de) 2016-06-16
JP2016535470A (ja) 2016-11-10
CN105594199B (zh) 2019-06-14
JP6348578B2 (ja) 2018-06-27
US20150085988A1 (en) 2015-03-26
US9500752B2 (en) 2016-11-22

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