WO2015045935A1 - Bonding apparatus - Google Patents

Bonding apparatus Download PDF

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Publication number
WO2015045935A1
WO2015045935A1 PCT/JP2014/074366 JP2014074366W WO2015045935A1 WO 2015045935 A1 WO2015045935 A1 WO 2015045935A1 JP 2014074366 W JP2014074366 W JP 2014074366W WO 2015045935 A1 WO2015045935 A1 WO 2015045935A1
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WO
WIPO (PCT)
Prior art keywords
head
unit
substrate
device chips
bonding
Prior art date
Application number
PCT/JP2014/074366
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French (fr)
Japanese (ja)
Inventor
浩光 和田
Original Assignee
東レエンジニアリング株式会社
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Publication date
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Publication of WO2015045935A1 publication Critical patent/WO2015045935A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/2732—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/7528—Resistance welding electrodes, i.e. for ohmic heating
    • H01L2224/75282—Resistance welding electrodes, i.e. for ohmic heating in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/75824—Translational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector

Definitions

  • the present invention relates to a bonding apparatus for bonding a device chip onto a substrate on which a conductive paste is applied on an electrode pad.
  • a substrate module in which a component (a so-called device chip) in which a resistor, a capacitor, a reactance, a switching circuit and the like are incorporated on a wiring board is used in various applications.
  • the surface of the substrate has a wave of about 10 to 100 ⁇ m.
  • the conductive paste applied to join the electrode pad and the device chip is applied only in a minimum amount in order to prevent a short circuit between adjacent device chips and electrodes.
  • the bonding failure referred to here is when the contact area between the device chip and the conductive paste is less than the area that should be contacted, or when the conductive paste excessively protrudes during bonding and the adjacent device chip or electrode pad. It means a short circuit.
  • an object of the present invention is to provide a bonding apparatus capable of preventing a bonding failure between each device chip and an electrode pad when bonding a plurality of device chips simultaneously.
  • the first invention provides: A bonding apparatus for bonding a plurality of device chips on a plurality of electrode pads provided on a substrate surface, A stage portion for placing the substrate in a horizontal direction; A chip supply unit for supplying the plurality of device chips in a state corresponding to the positions and intervals of the electrode pads on the substrate; A head portion for holding a plurality of device chips bonded on the substrate at a time; A head elevating mechanism that moves the head unit up and down with respect to the stage unit; A head excitation unit for exciting the head unit in the vertical direction, The head unit includes a heater unit for heating the plurality of device chips,
  • the bonding apparatus is characterized in that the plurality of device chips are simultaneously bonded onto the plurality of electrode pads provided on the substrate surface.
  • the head vibration unit is configured to vibrate the head unit in the vertical direction by repeating the lifting operation of the head lifting mechanism while the head unit is lowered to the stage unit side.
  • the movable side member of the elevating guide unit to which the head unit is attached and the movable side member of the head elevating mechanism are connected via a spherical bearing.
  • a head pressurizing unit that further pressurizes the head unit toward the stage unit is further provided.
  • a fifth invention is the fourth invention,
  • the point of action of the head pressurizing unit is configured to act on a movable member for moving the head unit in the vertical direction or a connecting member attached to the movable member.
  • the substrate W to be bonded has four electrode pads P1 to P4 formed on the surface thereof, and a mode in which the device chips C1 to C4 are bonded to the respective electrode pads is illustrated.
  • the three axes of the orthogonal coordinate system are X, Y, and Z, the XY plane is the horizontal plane, and the Z direction is the vertical direction.
  • the X direction represents the direction of the arrow as the front side, and the opposite direction as the back side
  • the Y direction represents the direction of the arrow as the right side
  • the opposite direction as the left side
  • the Z direction represents the direction of the arrow (gravity).
  • the upper direction is expressed as the upper side
  • the opposite direction is expressed as the lower side.
  • FIG. 1 is a schematic view showing the whole of an example embodying the present invention.
  • a bonding apparatus 1 according to the present invention includes a stage unit 2, a chip supply unit 7, a head unit 3, a head lifting mechanism 4, and a head vibration unit 5.
  • the stage unit 2 is configured to place the substrate W to be bonded to the device chip in the horizontal direction.
  • the stage unit 2 is configured to include a substrate mounting table 21 in which the substrate holding force does not act when the substrate W is placed or replaced, and the substrate holding force acts after the substrate is placed.
  • the substrate mounting table 21 is provided with a groove or a hole on the surface thereof and on the inner side of the outer shape of the substrate W to be mounted. These grooves and holes are connected via an external vacuum generation mechanism (not shown) and a switching valve (not shown), etc., so that they can be switched between a vacuum state and an atmospheric release state.
  • the substrate mounting table 21 may include an electrostatic chuck having an area necessary for holding the substrate W, and may be configured to hold or release the substrate W. By doing so, the substrate mounting table 21 can appropriately hold and release the substrate W.
  • the stage unit 2 may be attached to the apparatus frame 10 if it is not necessary to move.
  • the stage unit 2 be configured to be movable in the Y direction as shown in FIG.
  • a pair of rails 25 extending in the Y direction are arranged on the apparatus frame 10, and a Y-axis slider 26 that moves on the rails 25 in the Y direction is provided.
  • a Y-axis slider drive mechanism (not shown) is provided that moves the Y-axis slider 26 in a predetermined direction at a predetermined speed and stops at a predetermined location based on an external control signal.
  • examples of the Y-axis slider drive mechanism include those in which the Y-axis slider 26 is driven by a rotary motor and a ball screw, those that are driven by a linear motor, and those that are driven by an air cylinder or a hydraulic cylinder. If it does so, the place where the board
  • the chip supply unit 7 supplies a plurality of device chips C1 to C4 to be bonded onto the electrode pads P1 to P4 in a state corresponding to the positions and intervals of the electrode pads P1 to P4 on the substrate W.
  • the chip supply unit 7 includes a chip supply base 71 on which a plurality of device chips C1 to C4 are placed.
  • the chip supply base 71 has a recess 72 corresponding to the outer shape of the device chips C1 to C4, and the depth of the recess 72 is larger than the thickness of the device chips C1 to C4. It is set shallowly.
  • the positions and intervals of the recesses 72 are arranged in accordance with the positions and intervals of the electrode pads P1 to P4 of the substrate W. Therefore, the device chips C1 to C4 are dropped into the recesses 72 of the chip supply base 71, and are arranged in an aligned manner with the surface of each chip being above the surface of the chip supply base 71.
  • the chip supply unit 7 is disposed at a position where it does not physically interfere with the stage unit 2.
  • FIG. 1 shows a state in which the stage unit 2 is arranged on the front side and the chip supply unit 7 is arranged on the back side (the same applies to FIG. 3 described later).
  • the chip supply unit 7 is not limited to the chip supply base 71 having a recess, and may be in another form.
  • a chip positioning member such as a reference pin or a reference bar along the outer shape of the device chips C1 to C4 is arranged on a flat chip supply base. These chip positioning members are arranged so that each chip is in a state corresponding to the position / interval of the electrode pads P1 to P4 on the substrate W by aligning the device chips C1 to C4.
  • the chip supply unit 7 may be configured to include a flat chip supply table and a chip mounter that aligns and arranges the device chips C1 to C4 at predetermined positions and intervals. That is, the electrode pads P1 to P4 are arranged on the flat chip supply table in a state corresponding to the positions and intervals of the electrode pads P1 to P4 of the substrate W.
  • the device chips C1 to C4 can be arranged in advance in a state corresponding to the positions and intervals of the electrode pads P1 to P4 on the substrate W. . Therefore, these chips can be picked up at once using the head unit 3 and can be bonded onto the electrode pads P1 to P4 of the substrate W with a predetermined position and interval.
  • the head unit 3 holds a plurality of device chip chips C1 to C4 to be bonded on the substrate W at a time.
  • the head unit 3 includes a chip holding unit 31 and a heater unit 32.
  • the chip holding unit 31 holds a plurality of device chip chips C1 to C4.
  • the chip holding unit 31 has a configuration in which a holding force is applied until the device chips C1 to C4 are picked up and bonded to the substrate W, and the holding force is not applied until the next device chip is picked up after the head is lifted after bonding. deep.
  • the chip holding part 31 is provided with a groove or a hole on the surface thereof and inside the outer shape of the device chips C1 to C4 to be picked up. These grooves and holes are connected via an external vacuum generation mechanism (not shown) and a switching valve (not shown), etc., so that they can be switched between a vacuum state and an atmospheric release state. By doing so, the chip holding unit 31 can appropriately hold and release the device chips C1 to C4 by suction.
  • the substrate mounting table 21 of the stage unit 2, the chip mounting unit 71 of the chip supply unit 7, and the chip holding unit 31 of the head unit 3 are adjusted in advance so as to be parallel to each other.
  • the heater part 32 heats the conductive paste CP.
  • the heater unit 32 can be configured using a ceramic heater, a sheathed heater, or the like, so that heating ON / OF can be switched or the heating temperature can be set by voltage or voltage control from the outside. deep.
  • the conductive paste CP can be heated via the plurality of device chip chips C1 to C4.
  • FIG. 2 is a schematic diagram showing a main part of an example of a form embodying the present invention.
  • FIG. 2 shows the substrate mounting table 21 of the stage unit 2, the chip holding unit 31 and the heater unit 32 of the head unit 3, and device chips C 1 to C 4 held on the lower surface of the chip holding unit 31. Furthermore, a substrate W to be handled as a bonding target in the bonding apparatus 1 according to the present invention is placed on the substrate platform 21.
  • the substrate W handled as a bonding target in the bonding apparatus 1 according to the present invention has a conductive paste CP applied in advance on the electrode pads P1 to P4 formed on the surface thereof. Further, the conductive paste CP is applied with a predetermined thickness (that is, a necessary amount) inside the outer shape of the electrode pads P1 to P4 by, for example, screen printing in consideration of the pressure at the time of bonding.
  • the head elevating mechanism 4 moves the head unit 3 up and down with respect to the stage unit 2 and the chip supply unit 7.
  • the head unit 3 is attached to a Z-axis slider 43 that is a movable member of the head lifting mechanism 4.
  • FIG. 3 is a schematic view showing the whole of an example embodying the present invention.
  • FIG. 1 shows a state where the Z-axis slider 43 and the head unit 3 of the head lifting mechanism 4 are raised
  • FIG. 3 shows a state where the Z-axis slider 43 and the head unit 3 are lowered.
  • the head lifting mechanism 4 includes a base plate 41, a pair of rails 42 arranged on the base plate 41 and extending in the Z direction, and a Z-axis slider 46 that moves on the rails 42 in the Z direction.
  • a rotation motor 45 is attached to the Z-axis slider 43 via a ball screw 44.
  • the rotation motor 45 can rotate at a predetermined rotation speed in a predetermined direction based on a control signal from the outside, and can stop at a predetermined angle. Therefore, based on signal control from the outside, the Z-axis slider 43 can be moved at a predetermined speed in a predetermined direction and can be stopped at a predetermined location.
  • the head portion 3 is attached to the Z-axis slider 43 through connecting members 33, 34, and 35 as appropriate. Therefore, the head unit 3 can move up and down in the vertical direction based on a control signal from the outside, and can be stationary at a predetermined position.
  • the head elevating mechanism 4 is not limited to the form using the rotary motor as described above, and the Z-axis slider 43 may be moved up and down using an air cylinder or a hydraulic cylinder.
  • the head elevating mechanism 4 may be fixedly attached to the apparatus frame 10 via the connecting member 11 if it is not necessary to move the head unit 3 in the horizontal direction.
  • the above-described chip supply unit 7 includes a mechanism for moving the chip mounting table 71 to a position below the head unit 3 and waiting in that state while maintaining a state in which the chip supply unit 7 does not physically interfere with the stage unit 2. Keep it in configuration.
  • the head lifting mechanism 4 is preferably configured to be movable in the X direction as shown in FIGS.
  • a pair of rails 15 extending in the X direction are arranged on the connecting member 11, and an X-axis slider 16 that moves on the rails 15 in the X direction is provided.
  • An X-axis slider drive mechanism (not shown) is provided that moves the X-axis slider 16 at a predetermined speed and stops it at a predetermined location based on a control signal from the outside.
  • examples of the X-axis slider drive mechanism include those in which the X-axis slider 16 is driven by a rotary motor and a ball screw, those that are driven by a linear motor, and those that are driven by an air cylinder or a hydraulic cylinder. By doing so, it is possible to individually set a place where the head unit 3 picks up the device chips C1 to C4 and a place where the chip devices C1 to C4 are bonded to the substrate W.
  • the head vibration unit 5 vibrates the head unit 3 in the vertical direction.
  • the head excitation unit 5 can be exemplified by a high-frequency vibration generator 51 or the like, and is attached to the connecting member 35 to which the head unit 3 is attached via the connecting members 33 and 34.
  • the high frequency vibration generator 51 vibrates appropriately with a predetermined amplitude and frequency based on an external control signal. More specifically, the high-frequency vibration generator 51 includes a rotary motor therein, and the eccentric weight attached to the rotary motor rotates to generate vibration in the direction indicated by the arrow 52. . Alternatively, the high-frequency vibration generator 51 may generate a vibration in the direction indicated by the arrow 52 when a vibrator having a predetermined weight reciprocates.
  • the conductive paste CP used for bonding the device chip has a high viscosity, so that it is difficult to spread the paste uniformly by simple pressing. In other words, it is difficult to spread the conductive paste CP thinly while keeping the thickness of the conductive paste CP uniform at the central portion and the peripheral portion of the region where the conductive paste CP is applied. Therefore, by bringing the device chips C1 to C4 before bonding into contact with the conductive paste CP applied on the electrode pads P1 to P4 and then applying the vibration, the conductive paste is further applied as compared with the case where no vibration is applied. The distance between the device chips C1 to C4 and the electrode pads P1 to P4 can be reduced while pushing the CP uniformly and thinly. Therefore, it can be said that the bonding apparatus 1 according to the present invention is a suitable form for bonding a plurality of device chips to the substrate W coated with the highly viscous conductive paste CP.
  • FIG. 4 is a flowchart showing an example of a form embodying the present invention.
  • a substrate W on which bonding paste is applied to the electrode pads P1 to P4 is placed on the stage unit 2 (s11).
  • the bonding device chips C1 to C4 are arranged side by side aligned in a predetermined position and direction (s21).
  • the stage unit 2 is sucked and held (s12), the position alignment of the substrate W is performed (s13), the stage unit 2 is moved to the bonding position (s14), and is stopped (s15).
  • the head unit 3 is moved to a predetermined position above the chip supply unit 7 (s22), the head unit 3 is lowered (s23), and the device chips C1 to C4 are moved.
  • C4 is vacuum-sucked (s24), the head unit 3 is raised again (s25), the head unit 3 is moved to the joining position (s26), and is put on standby above the stage unit 3 (s27).
  • the head 3 is lowered (s31).
  • the head unit 3 is lowered, and it is determined whether or not the device chips C1 to C4 are in contact with the conductive paste CP applied on the electrode pads P1 to P4 of the substrate W (s32). Note that this contact determination is made based on a rise in the current value of the rotary motor, a determination based on a decrease in the position of the Z-axis slider or the position change amount, or a pressure sensor incorporated in advance in the stage unit 2 or the head unit 3. It is possible to make a determination based on the signal output.
  • the head vibration unit 5 When it is determined that the device chips C1 to C4 are in contact with the conductive paste CP applied on the electrode pads P1 to P4 of the substrate W, the head vibration unit 5 is operated to apply the conductive paste CP. Spread thinly and uniformly (s34).
  • the heater unit is operated (s35), and the device chips C1 to C4 and the electrode pads P1 to P4 are joined.
  • the vacuum suction of the head part 3 and the head vibration part / heater part are changed from the operating state to the stopped state (s38).
  • the part 3 is raised (s39).
  • the stage unit 2 is moved to the substrate replacement position (s40), the adsorption state of the substrate is released (s41), and the substrate to which the device chips C1 to C4 are bonded is taken out (s42).
  • the bonding apparatus 1 further includes a control unit for controlling each of the above-described devices, semi-automatically with human intervention, or presetting bonding operation and various conditions, and based on a program. Automatically, the series of bonding operations described above (s11 to s42) I do.
  • the bonding apparatus 1 Since the bonding apparatus 1 according to the present invention has the above-described configuration, the plurality of device chips C1 to C4 are simultaneously bonded onto the plurality of electrode pads P1 to P4 provided on the surface of the substrate W. be able to.
  • the conductive paste CP is uniform even if the surface of the substrate W has waviness and the spacing between the electrode pads P1 to P4 and the device chips C1 to C4 bonded thereon varies. Bonding is performed in a state of being spread over. Therefore, when bonding a plurality of chips simultaneously, it is possible to prevent a bonding failure between the plurality of device chips and the electrode pads.
  • the head vibration unit 5 is not limited to the configuration in which the high-frequency vibration generator 51 is attached to the head unit 3 as described above with reference to FIGS.
  • the head vibration unit 5a having the configuration as shown may be used.
  • FIG. 5 and 6 are schematic views showing the whole of another example embodying the present invention. 5 shows a state in which the head unit 3 is raised, and FIG. 6 shows a state in which the head unit 3 is lowered.
  • a bonding apparatus 1a includes a stage part 2 and a head part 3 having the same configuration as the bonding apparatus 1, and a head lifting / lowering part 4a having a different configuration.
  • the head elevating mechanism 4a moves the head unit 3 up and down with respect to the stage unit 2.
  • the head unit 3 is attached to a shaft 47 which is a movable side member of the head lifting mechanism 4a.
  • the head elevating mechanism 4a is composed of a linear cylinder unit 40a.
  • the linear cylinder unit 40a includes a housing 46, a shaft 47, and pressurized fluid supply ports 46a and 46b for taking the shaft 47 in and out.
  • the casing 46 is hollow and sealed inside, and a valve plate 48 connected to the shaft 47 is provided in the casing 46 due to a pressure difference between the fluids supplied to the pressurized fluid supply ports 46a and 46b. Is configured to reciprocate.
  • the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a is smaller than the pressure f1b on the pressurized fluid supply port 46b side (for example, the pressurized fluid supply port 46a side is connected to the atmosphere). If released and the compressed air is supplied to the pressurized fluid supply port 46b), the shaft 47 and the head portion 3 are raised as shown in FIG.
  • the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a becomes larger than the pressure f1b on the pressurized fluid supply port 46b side (for example, compressed air is supplied to the pressurized fluid supply port 46a side).
  • the shaft 47 and the head unit 3 are lowered to the stage unit 2 side as shown in FIG.
  • the head vibration unit 5a vibrates the head unit 3 in the vertical direction by repeating the lifting operation of the head lifting mechanism 4a with the head unit 3 lowered to the stage unit 2 side.
  • the head vibration unit 5a can be realized by switching the reciprocating operation of the linear cylinder unit 40a of the head lifting mechanism 4a at high speed.
  • FIG. 7 is a time chart in another example of a form embodying the present invention.
  • FIG. 7A is a diagram showing the temporal change in the height of the head unit 3 with the vertical axis representing the height Zh and the horizontal axis representing time t.
  • FIG. 7B is a diagram showing the change over time in the pressure difference (f1a ⁇ f1b) supplied to the linear cylinder unit 40, with the pressure f on the vertical axis and the time t on the horizontal axis.
  • the shaft 47 of the linear cylinder unit 40a is lowered, and the head unit 3 is lowered from the raised end position to the paste contact position (position where the device chips C1 to C4 and the conductive paste CP are in contact). (State shown in FIG. 6). Further, the pressure (f1a, f1b) for moving the shaft 47 up and down is switched at high speed (for example, at 10 to several hundred Hz) while the head unit 3 is lowered to the stage unit 2 side. Control is performed to reverse the air pressure and hydraulic pressure introduced into the pressurized fluid supply ports 46a and 46b.
  • the heater unit 32 of the head unit 3 is operated to start heating.
  • the head lifting mechanism according to the present invention may have other forms, for example, as shown in FIGS. 1 and 3, the Z-axis slider 43 is moved up and down by the ball screw 44 and the rotary motor 45.
  • a form using the head lifting mechanism 4 can also be realized.
  • the rotation motor 45 is controlled to reverse the rotation direction at a high speed (for example, at 10 to several hundred Hz) so that the rotational torque on the side where the Z-axis slider 43 descends increases and decreases at high speed.
  • the bonding apparatus 1a Since the bonding apparatus 1a according to the present invention has the above-described configuration, the conductive paste CP can be spread uniformly and reliably while simplifying the configuration for exciting the head unit 3.
  • the bonding apparatus 1a according to the present invention described above with reference to FIGS. 5 and 6 further includes an elevating guide part 49 for regulating the elevating movement of the head part 3 in the vertical direction, and the elevating guide part to which the head part 3 is attached. It is preferable that a shaft 49s, which is a movable side member 49, and a shaft 47, which is a movable side member of the head lifting mechanism 4a, are connected via a spherical bearing S.
  • the elevating guide part 49 includes a columnar shaft 49s having a predetermined length in the Z direction and a linear bush 49b.
  • the linear bush 49b is attached on the base plate 41, and the shaft 49s can move only in the Z direction.
  • the shaft 47 and the shaft 49s are connected via the spherical bearing S, there is no backlash in the vertical direction. Therefore, the vertical excitation force applied to the head part 3 is transmitted without being attenuated, and the conductive paste CP can be efficiently spread.
  • the bonding apparatus 1, 1 a may be configured to further include the head pressurizing unit 6.
  • the head pressurization unit 6 further pressurizes the head unit 3 toward the stage unit 2 side.
  • the head pressure unit 6 can be configured as shown in FIGS. That is, the head pressure unit 6 is a mechanism that further presses the shaft 49a, which is a movable side member for moving the head unit 3 in the vertical direction, to the stage unit 2 side via the connecting member attached to the head unit 3. It has a configuration with.
  • the head pressure unit 6 includes a linear cylinder unit 60 and a pressing member 65.
  • the linear cylinder unit 60 includes a housing 61, a shaft 62, and pressurized fluid supply ports 61a and 61b for taking the shaft 62 in and out.
  • the casing 61 is hollow with its inside sealed, and a valve plate 63 connected to the shaft 62 is formed in the casing 61 by the pressure difference between the fluids supplied to the pressurized fluid supply ports 61a and 61b. Is configured to reciprocate.
  • the holding member 65 has a linear shape or a substantially L shape (including a substantially V shape), and is attached to the connecting member 11 of the apparatus frame 10 via a knuckle joint 66.
  • the pressing member 65 is configured such that the tip portion 68 rotates in the vertical direction around the shaft portion of the knuckle joint 66 as the shaft 62 reciprocates.
  • the pressure f2a on the pressurized fluid supply port 61a side of the linear cylinder unit 60 becomes larger than the pressure f2b on the pressurized fluid supply port 61b side (for example, compressed to the pressurized fluid supply port 61a side). If air is supplied and the pressurized fluid supply port 61b side is released to the atmosphere), as shown in FIG. 5, the shaft 62 is lowered in the direction indicated by the arrow 62v, and the tip 68 of the pressing member 65 is It will be in the state raised to the direction shown to 68v. In this state, the distal end portion 68 is separated from the connecting member 36 connected to the head 3, and the pressing force for pressing the head portion 3 against the stage portion 2 side does not act.
  • the pressure f2a on the pressurized fluid supply port 61a side of the direct acting cylinder unit 60 is smaller than the pressure f2b on the pressurized fluid supply port 62b side (for example, the pressurized fluid supply port 61a side is released to the atmosphere, 6), the shaft 62 rises in the direction indicated by the arrow 62v, and the distal end portion 68 of the pressing member 65 is indicated by the arrow 68v. It will be in a state of descending in the direction. In this state, the distal end portion 68 presses the connecting member 36 connected to the head 3, and a pressing force that presses the head portion 3 against the stage portion 2 side acts.
  • the bonding apparatus including the head pressurizing unit 6 has a device chip after the conductive paste CP is pushed and spread by the head lifting / lowering operation and the head vibrating unit.
  • the distance between C1 to C4 and the electrode pads P1 to P4 can be maintained.
  • the device chips C1 to C4 can be further pushed into the substrate W side to slightly close the distance from the electrode pads P1 to P4.
  • the head pressure unit 6 uses the point where the tip 68 of the pressing member 65 contacts the connecting member 36 as an action point of the pressing force, and the head part 3 is placed on the stage part 2 at the action point on the connecting member 36. It has a structure in which the force of pressing toward the side works. For this reason, even if the force for pushing the head unit 3 by the head pressurizing unit 3 is set large, the pressure can be applied without depending on the vertical movement of the head elevating unit 4. By doing so, it is possible to prevent extra stress from being applied to the X-axis slider 15 and the linear motion guide portion of the head elevating mechanism 4 as occurs when the pressure is applied only by the head elevating unit 4.
  • the device chips C1 to C4 are heated in order to join the device chip and the electrode pad while maintaining the parallelism of the stage unit 2 and the head unit 3, and the solvent of the conductive paste CP is volatilized to reduce the volume.
  • the bonding can be completed in a state where the conductive paste CP is spread over the entire contact area.
  • FIG. 8 is a side view which shows the principal part of another example of the form which embodies this invention.
  • the form shown in FIG. 8 differs from the configuration shown in FIGS. 5 and 6 in that the tip of the shaft 49a1, which is a movable side member for moving the head part 3 in the vertical direction, is exposed.
  • a connecting member 36a is attached to the side surface of the distal end portion of the shaft 49a1, and a spherical bearing S is attached to the connecting member 36a. That is, the head pressure unit 6 uses the point where the tip 68 of the pressing member 65 contacts the connecting member 49a1 as an action point of the pressing force, and the head 3 is placed on the stage at the action point of the tip of the connecting member 49a1.
  • the structure is such that the force pressing toward 2 works.
  • Other configurations are the same as those shown in FIGS.
  • the tip portion 68 of the pressing member 65 which is the point of action of the head pressurizing portion 6, directly contacts the shaft 49a1 and presses the shaft 49a1, thereby causing the head portion 3 to move to the stage portion 2.
  • the device chips C1 to C4 are heated in order to join the device chip and the electrode pad in a state where the parallelism between the stage unit 2 and the head unit 3 is maintained, as in the above-described form. Even if the solvent of the conductive paste CP is volatilized and the volume is reduced, the bonding can be completed in a state where the conductive paste CP is spread over the entire contact area.
  • the present invention is not limited to this form, and the conductive paste CP may be heated from the substrate W side by a heater part incorporated in the stage part 2.
  • the heater unit has a structure in which a ceramic heater, a sheathed heater, a rubber heater, or the like is incorporated in the substrate mounting table 21 of the stage unit 2, and heating ON / OF is switched by external voltage or voltage control. The heating temperature can be set.
  • the surface of the substrate mounting table 21 is made of transparent glass, an ITO electrode is patterned on a portion on which the substrate W is mounted, and the substrate W can be heated by applying a current / voltage to the ITO electrode (so-called configuration) Glass heater).
  • the heater unit for heating the conductive paste CP may be provided in both the head unit 2 and the stage unit 2. By doing so, since the heating time for joining can be shortened, the production efficiency can be improved.

Abstract

Provided is a bonding apparatus capable of preventing bonding failures between device chips and electrode pads when simultaneously bonding a plurality of device chips. Specifically, this bonding apparatus for bonding device chips on electrode pads that are provided on a substrate surface is provided with: a stage part on which the substrate is mounted in the horizontal direction; a head part that holds a plurality of device chips at one time; and a head lift mechanism that lifts the head part in the vertical direction. A movable-side member of the head lift mechanism is provided with: the head part that is connected to the movable-side member via a ball joint; and a vibration apparatus that applies vibration with respect to the movable direction of the movable-side member. The bonding apparatus is also provided with a pressurizing apparatus that pressurizes the head part toward the stage part.

Description

ボンディング装置Bonding equipment
　本発明は、電極パッド上に導電用ペーストが塗布されている基板上に、デバイスチップを接合するボンディング装置に関する。 The present invention relates to a bonding apparatus for bonding a device chip onto a substrate on which a conductive paste is applied on an electrode pad.
　従来より、配線基板上に抵抗器やコンデンサ、リアクタンス、スイッチング回路などが組み込まれた部品（いわゆる、デバイスチップ）が接合された基板モジュールが、種々の用途で用いられている。 Conventionally, a substrate module in which a component (a so-called device chip) in which a resistor, a capacitor, a reactance, a switching circuit and the like are incorporated on a wiring board is used in various applications.
　さらに近年はハイブリッド自動車や電気自動車の普及に伴い、パワートランジスタやパワーデバイスと呼ばれるデバイスチップが接合された基板モジュールが普及しており、接合方法について種々検討されている（例えば、特許文献１，２）。 Furthermore, in recent years, with the spread of hybrid vehicles and electric vehicles, substrate modules to which device chips called power transistors and power devices are joined are widely used, and various joining methods have been studied (for example, Patent Documents 1 and 2). ).
特開２００６－５９９０４号公報JP 2006-59904 A 特開２０１３－４１８７０号公報JP 2013-41870 A
　基板モジュールを構成する基板上に複数のデバイスチップを接合する場合、デバイスチップを１つずつ接合するよりも、複数同時に接合する方が、生産性向上のために好ましい。しかし、基板の表面には、１０～１００μｍ程度のうねりがある。そして、電極パッドとデバイスチップとを接合するために塗布される導電用ペーストは、隣接するデバイスチップや電極同士のショートを防ぐために、必要最小限の量しか塗布されていない。 When bonding a plurality of device chips on a substrate constituting a substrate module, it is preferable to bond a plurality of device chips at the same time, rather than bonding device chips one by one. However, the surface of the substrate has a wave of about 10 to 100 μm. The conductive paste applied to join the electrode pad and the device chip is applied only in a minimum amount in order to prevent a short circuit between adjacent device chips and electrodes.
　そのため、このような基板上に、複数のデバイスチップを一度に接合しようとすると、それぞれの電極パッドとデバイスチップ間の間隔が、基板のうねりなどの影響により少しずつ異なるため、従来の技術では、導電ペーストとデバイスチップとの接触が不均一となり、結果的に接合不良を招くおそれがあるという課題があった。 Therefore, when trying to join a plurality of device chips on such a substrate at a time, the distance between each electrode pad and device chip is slightly different due to the influence of the substrate swell, etc. There has been a problem that contact between the conductive paste and the device chip becomes non-uniform, resulting in poor bonding.
　なお、ここで言う接合不良とは、デバイスチップと導電用ペーストの接触面積が、本来接触すべき面積に満たない場合や、接合時に導電用ペーストが過度にはみ出して隣接するデバイスチップや電極パッドとショートする状態を意味する。 Note that the bonding failure referred to here is when the contact area between the device chip and the conductive paste is less than the area that should be contacted, or when the conductive paste excessively protrudes during bonding and the adjacent device chip or electrode pad. It means a short circuit.
　そこで、本発明の目的は、複数のデバイスチップを同時に接合する際に、それぞれのデバイスチップと電極パッドとの接合不良を防ぐことができるボンディング装置を提供することである。 Accordingly, an object of the present invention is to provide a bonding apparatus capable of preventing a bonding failure between each device chip and an electrode pad when bonding a plurality of device chips simultaneously.
　以上の課題を解決するために、第１の発明は、
　基板表面に設けられた複数の電極パッド上に、複数のデバイスチップを接合するボンディング装置であって、
　前記基板を水平方向に載置するステージ部と、
前記基板上の電極パッドの位置・間隔に対応させた状態で前記複数のデバイスチップを供給するチップ供給部と、
前記基板上にボンディングする複数のデバイスチップを一度に保持するヘッド部と、
前記ステージ部に対して前記ヘッド部を上下方向に昇降移動させるヘッド昇降機構と、
前記ヘッド部を上下方向に加振するヘッド加振部とを備え、
　前記ヘッド部には、前記複数のデバイスチップを加熱するヒータ部が備えられ、
　前記基板表面上に設けられた前記複数の電極パッド上に、前記複数のデバイスチップを同時に接合することを特徴とする、ボンディング装置である。 In order to solve the above problems, the first invention provides:
A bonding apparatus for bonding a plurality of device chips on a plurality of electrode pads provided on a substrate surface,
A stage portion for placing the substrate in a horizontal direction;
A chip supply unit for supplying the plurality of device chips in a state corresponding to the positions and intervals of the electrode pads on the substrate;
A head portion for holding a plurality of device chips bonded on the substrate at a time;
A head elevating mechanism that moves the head unit up and down with respect to the stage unit;
A head excitation unit for exciting the head unit in the vertical direction,
The head unit includes a heater unit for heating the plurality of device chips,
The bonding apparatus is characterized in that the plurality of device chips are simultaneously bonded onto the plurality of electrode pads provided on the substrate surface.
　第２の発明は、第１の発明において、
　前記ヘッド加振部は、前記ヘッド部を前記ステージ部側に下降させた状態で、前記ヘッド昇降機構の昇降動作を繰り返すことにより、当該ヘッド部を上下方向に加振するものであることを特徴とする。 According to a second invention, in the first invention,
The head vibration unit is configured to vibrate the head unit in the vertical direction by repeating the lifting operation of the head lifting mechanism while the head unit is lowered to the stage unit side. And
　第３の発明は、第２の発明において、
　前記ヘッド部の昇降移動を上下方向に規制する昇降ガイド部をさらに備え、
　前記ヘッド部が取り付けられた前記昇降ガイド部の可動側部材と、前記ヘッド昇降機構の可動側部材とが、球面軸受けを介して連結されていることを特徴とする。 According to a third invention, in the second invention,
An elevating guide part for regulating the elevating movement of the head part in the vertical direction;
The movable side member of the elevating guide unit to which the head unit is attached and the movable side member of the head elevating mechanism are connected via a spherical bearing.
　第４の発明は、第１～３のいずれかの発明において、
　前記ヘッド部を前記ステージ部側に向けてさらに加圧するヘッド加圧部をさらに備えた
ことを特徴とする。 According to a fourth invention, in any one of the first to third inventions,
A head pressurizing unit that further pressurizes the head unit toward the stage unit is further provided.
　第５の発明は、第４の発明において、
　前記ヘッド加圧部の作用点が、前記ヘッド部を上下方向に移動させるための可動側部材又は当該可動側部材に取り付けられた連結部材にはたらく構成をしていることを特徴とする。 A fifth invention is the fourth invention,
The point of action of the head pressurizing unit is configured to act on a movable member for moving the head unit in the vertical direction or a connecting member attached to the movable member.
　複数チップを同時に接合する際に、複数のデバイスチップと電極パッドとの接合不良を防ぐことができる。 ¡When bonding multiple chips at the same time, it is possible to prevent bonding defects between multiple device chips and electrode pads.
本発明を具現化する形態の一例の全体を示す側面図である。It is a side view which shows the whole example of the form which embodies this invention. 本発明を具現化する形態の一例の要部を示す斜視図である。It is a perspective view which shows the principal part of an example of the form which embodies this invention. 本発明を具現化する形態の一例の全体を示す側面図である。It is a side view which shows the whole example of the form which embodies this invention. 本発明を具現化する形態の一例を示すフロー図である。It is a flowchart which shows an example of the form which embodies this invention. 本発明を具現化する形態の別の一例の全体を示す側面図である。It is a side view which shows the whole of another example of the form which embodies this invention. 本発明を具現化する形態の別の一例の全体を示す側面図である。It is a side view which shows the whole of another example of the form which embodies this invention. 本発明を具現化する形態の別の一例におけるタイムチャートである。It is a time chart in another example of the form which embodies the present invention. 本発明を具現化する形態のさらに別の一例の要部を示す側面図である。It is a side view which shows the principal part of another example of the form which embodies this invention.
　本発明を実施するための形態について、図を用いながら説明する。なお、説明を簡単に行うため、接合対象となる基板Ｗには、その表面に４つの電極パッドＰ１～Ｐ４が形成されており、その上に各々デバイスチップＣ１～Ｃ４を接合する形態を例示する。
また各図においては、直交座標系の３軸をＸ、Ｙ、Ｚとし、ＸＹ平面を水平面、Ｚ方向を鉛直方向とする。特に、Ｘ方向は、矢印の方向を手前側、その逆方向を奥側と表現し、Ｙ方向は、矢印の方向を右側、その逆方向を左側と表現し、Ｚ方向は矢印の方向（重力上方）を上側、その逆方向を下側と表現する。 DESCRIPTION OF EMBODIMENTS Embodiments for carrying out the present invention will be described with reference to the drawings. For the sake of simplicity, the substrate W to be bonded has four electrode pads P1 to P4 formed on the surface thereof, and a mode in which the device chips C1 to C4 are bonded to the respective electrode pads is illustrated. .
In each figure, the three axes of the orthogonal coordinate system are X, Y, and Z, the XY plane is the horizontal plane, and the Z direction is the vertical direction. In particular, the X direction represents the direction of the arrow as the front side, and the opposite direction as the back side, the Y direction represents the direction of the arrow as the right side, and the opposite direction as the left side, and the Z direction represents the direction of the arrow (gravity). The upper direction is expressed as the upper side, and the opposite direction is expressed as the lower side.
　図１は、本発明を具現化する形態の一例の全体を示す概略図である。
本発明に係るボンディング装置１は、ステージ部２と、チップ供給部７と、ヘッド部３と、ヘッド昇降機構４と、ヘッド加振部５とを備えて構成されている。 FIG. 1 is a schematic view showing the whole of an example embodying the present invention.
A bonding apparatus 1 according to the present invention includes a stage unit 2, a chip supply unit 7, a head unit 3, a head lifting mechanism 4, and a head vibration unit 5.
　ステージ部２は、デバイスチップの接合対象となる基板Ｗを水平方向に載置するものである。ステージ部２は、基板Ｗの載置時や入れ替え時は基板保持力が作用せず、基板を載置した後に基板保持力が作用する、基板載置台２１を備えた構成としておく。 The stage unit 2 is configured to place the substrate W to be bonded to the device chip in the horizontal direction. The stage unit 2 is configured to include a substrate mounting table 21 in which the substrate holding force does not act when the substrate W is placed or replaced, and the substrate holding force acts after the substrate is placed.
　具体的には、基板載置台２１は、その表面であって、載置される基板Ｗの外形より内側部分に、溝や孔を設けておく。そして、これら溝や孔は、外部の真空発生機構（図示せず）と切替バルブ（図示せず）などを介して接続しておき、真空状態と大気解放状態に切り替え出来るようにしておく。 Specifically, the substrate mounting table 21 is provided with a groove or a hole on the surface thereof and on the inner side of the outer shape of the substrate W to be mounted. These grooves and holes are connected via an external vacuum generation mechanism (not shown) and a switching valve (not shown), etc., so that they can be switched between a vacuum state and an atmospheric release state.
　或いは、基板載置台２１は、基板Ｗを保持するために必要な面積の静電チャックを備え、基板Ｗを保持したり、保持解除したりできる構成としても良い。そうすることで、基板載置台２１は、適宜、基板Ｗを保持し、保持解除することができる。 Alternatively, the substrate mounting table 21 may include an electrostatic chuck having an area necessary for holding the substrate W, and may be configured to hold or release the substrate W. By doing so, the substrate mounting table 21 can appropriately hold and release the substrate W.
　ステージ部２は、移動の必要がなければ、装置フレーム１０に取り付けても良い。 The stage unit 2 may be attached to the apparatus frame 10 if it is not necessary to move.
　一方、ステージ部２は、Ｙ方向に移動させる必要があれば、図１に示すように、Ｙ方向に移動可能な構成としておくことが好ましい。この場合、装置フレーム１０上に、Ｙ方向に伸びる一対のレール２５を配置し、レール２５上をＹ方向に移動するＹ軸スライダー２６を備えておく。そして、外部からの制御信号に基づいて、Ｙ軸スライダー２６を所定の方向に、所定の速度で移動させ、所定の場所で静止させる、Ｙ軸スライダー駆動機構（図示せず）を備えておく。 On the other hand, if it is necessary to move the stage unit 2 in the Y direction, it is preferable that the stage unit 2 be configured to be movable in the Y direction as shown in FIG. In this case, a pair of rails 25 extending in the Y direction are arranged on the apparatus frame 10, and a Y-axis slider 26 that moves on the rails 25 in the Y direction is provided. A Y-axis slider drive mechanism (not shown) is provided that moves the Y-axis slider 26 in a predetermined direction at a predetermined speed and stops at a predetermined location based on an external control signal.
　具体的には、Ｙ軸スライダー駆動機構は、Ｙ軸スライダー２６を、回転モータとボールねじにより駆動するものや、リニアモータにより駆動するもの、エアシリンダや油圧シリンダーにより駆動するものが例示できる。そうすれば、ステージ部２における、基板Ｗを載置したり次の基板と入れ替えたりする場所と、チップデバイスを接合する場所とを、個別に設定することができる。 Specifically, examples of the Y-axis slider drive mechanism include those in which the Y-axis slider 26 is driven by a rotary motor and a ball screw, those that are driven by a linear motor, and those that are driven by an air cylinder or a hydraulic cylinder. If it does so, the place where the board | substrate W in the stage part 2 is mounted or replaced with the next board | substrate and the place which joins a chip device can be set separately.
　チップ供給部７は、基板Ｗ上の電極パッドＰ１～Ｐ４の位置・間隔に対応させた状態で、これら電極パッドＰ１～Ｐ４の上にボンディングする複数のデバイスチップＣ１～Ｃ４を供給するものである。具体的には、チップ供給部７は、複数のデバイスチップＣ１～Ｃ４を載置する、チップ供給台７１を備えて構成されている。より具体的な形態を例示すると、チップ供給台７１は、デバイスチップＣ１～Ｃ４の外形と対応した凹み部７２を有し、この凹み部７２の深さは、デバイスチップＣ１～Ｃ４の厚みよりも浅く設定されている。さらにこの凹み部７２の位置・間隔は、基板Ｗの電極パッドＰ１～Ｐ４の位置・間隔に合わせて配置されている。そのため、デバイスチップＣ１～Ｃ４は、チップ供給台７１の凹み部７２に落とし込まれ、かつ、各チップの表面がチップ供給台７１の表面よりも上側にある状態で整列配置される。なお、チップ供給部７は、ステージ部２とは物理的に干渉しない位置に配置しておく。例えば、図１には、ステージ部２が手前側、チップ供給部７が奥側に配置さている様子が示されている（後述の図３も同じ）。 The chip supply unit 7 supplies a plurality of device chips C1 to C4 to be bonded onto the electrode pads P1 to P4 in a state corresponding to the positions and intervals of the electrode pads P1 to P4 on the substrate W. . Specifically, the chip supply unit 7 includes a chip supply base 71 on which a plurality of device chips C1 to C4 are placed. To illustrate a more specific form, the chip supply base 71 has a recess 72 corresponding to the outer shape of the device chips C1 to C4, and the depth of the recess 72 is larger than the thickness of the device chips C1 to C4. It is set shallowly. Further, the positions and intervals of the recesses 72 are arranged in accordance with the positions and intervals of the electrode pads P1 to P4 of the substrate W. Therefore, the device chips C1 to C4 are dropped into the recesses 72 of the chip supply base 71, and are arranged in an aligned manner with the surface of each chip being above the surface of the chip supply base 71. The chip supply unit 7 is disposed at a position where it does not physically interfere with the stage unit 2. For example, FIG. 1 shows a state in which the stage unit 2 is arranged on the front side and the chip supply unit 7 is arranged on the back side (the same applies to FIG. 3 described later).
　チップ供給部７は、凹み部を有するチップ供給台７１に限定されず、他の形態であっても良い。例えば、平坦なチップ供給台に、デバイスチップＣ１～Ｃ４の外形に沿う基準ピンや基準バーなどのチップ位置決め用部材を配置して構成しておく。そして、これらチップ位置決め用部材は、デバイスチップＣ１～Ｃ４を沿わせることで、各チップが基板Ｗ上の電極パッドＰ１～Ｐ４の位置・間隔に対応させた状態となるように配置しておく。 The chip supply unit 7 is not limited to the chip supply base 71 having a recess, and may be in another form. For example, a chip positioning member such as a reference pin or a reference bar along the outer shape of the device chips C1 to C4 is arranged on a flat chip supply base. These chip positioning members are arranged so that each chip is in a state corresponding to the position / interval of the electrode pads P1 to P4 on the substrate W by aligning the device chips C1 to C4.
　或いは、チップ供給部７は、平坦なチップ供給台と、デバイスチップＣ１～Ｃ４を所定の位置・間隔で整列配置させるチップマウンタ－とを備えた構成をしたものであっても良い。つまり、平坦なチップ供給台の上に、基板Ｗの電極パッドＰ１～Ｐ４の位置・間隔と対応した状態で、電極パッドＰ１～Ｐ４を整列配置させておく。 Alternatively, the chip supply unit 7 may be configured to include a flat chip supply table and a chip mounter that aligns and arranges the device chips C1 to C4 at predetermined positions and intervals. That is, the electrode pads P1 to P4 are arranged on the flat chip supply table in a state corresponding to the positions and intervals of the electrode pads P1 to P4 of the substrate W.
　チップ供給部７は、このような構成をしているため、デバイスチップＣ１～Ｃ４を、基板Ｗ上の電極パッドＰ１～Ｐ４の位置・間隔に対応させた状態で予め配置しておくことができる。そのため、これらチップは、ヘッド部３を用いて一度にピックアップでき、基板Ｗの電極パッドＰ１～Ｐ４上に所定の位置・間隔を保ってボンディングすることができる。 Since the chip supply unit 7 has such a configuration, the device chips C1 to C4 can be arranged in advance in a state corresponding to the positions and intervals of the electrode pads P1 to P4 on the substrate W. . Therefore, these chips can be picked up at once using the head unit 3 and can be bonded onto the electrode pads P1 to P4 of the substrate W with a predetermined position and interval.
　ヘッド部３は、基板Ｗ上にボンディングする複数のデバイスチップチップＣ１～Ｃ４を一度に保持するものである。ヘッド部３は、チップ保持部３１と、ヒータ部３２とを備えて構成されている。 The head unit 3 holds a plurality of device chip chips C1 to C4 to be bonded on the substrate W at a time. The head unit 3 includes a chip holding unit 31 and a heater unit 32.
　チップ保持部３１は、複数のデバイスチップチップＣ１～Ｃ４を保持するものである。チップ保持部３１は、デバイスチップＣ１～Ｃ４をピックアップし基板Ｗに接合するまでは保持力を作用させ、接合後にヘッド上昇させる前から次のデバイスチップをピックアップするまでは保持力を作用させない構成としておく。 The chip holding unit 31 holds a plurality of device chip chips C1 to C4. The chip holding unit 31 has a configuration in which a holding force is applied until the device chips C1 to C4 are picked up and bonded to the substrate W, and the holding force is not applied until the next device chip is picked up after the head is lifted after bonding. deep.
　具体的には、チップ保持部３１は、その表面であって、ピックアップするデバイスチップＣ１～Ｃ４の外形より内側部分に、溝や孔を設けておく。そして、これら溝や孔は、外部の真空発生機構（図示せず）と切替バルブ（図示せず）などを介して接続しておき、真空状態と大気解放状態に切り替え出来るようにしておく。そうすることで、チップ保持部３１は、適宜、デバイスチップＣ１～Ｃ４を吸着保持し、保持解除することができる。 Specifically, the chip holding part 31 is provided with a groove or a hole on the surface thereof and inside the outer shape of the device chips C1 to C4 to be picked up. These grooves and holes are connected via an external vacuum generation mechanism (not shown) and a switching valve (not shown), etc., so that they can be switched between a vacuum state and an atmospheric release state. By doing so, the chip holding unit 31 can appropriately hold and release the device chips C1 to C4 by suction.
　なお、上述のステージ部２の基板載置台２１と、チップ供給部７のチップ載置台７１とと、ヘッド部３のチップ保持部３１とは、互いに平行となるように予め調整しておく。 Note that the substrate mounting table 21 of the stage unit 2, the chip mounting unit 71 of the chip supply unit 7, and the chip holding unit 31 of the head unit 3 are adjusted in advance so as to be parallel to each other.
　ヒータ部３２は、導電用ペーストＣＰを加熱するものである。
具体的には、ヒータ部３２は、セラミックヒータやシーズヒータなどを用いて構成することができ、外部からの電圧や電圧制御により、加熱ＯＮ／ＯＦを切り替えたり、加熱温度が設定できるようにしておく。ヒータ部３２をヘッド部３に備えることで、複数のデバイスチップチップＣ１～Ｃ４を介して導電用ペーストＣＰを加熱することができる。 The heater part 32 heats the conductive paste CP.
Specifically, the heater unit 32 can be configured using a ceramic heater, a sheathed heater, or the like, so that heating ON / OF can be switched or the heating temperature can be set by voltage or voltage control from the outside. deep. By providing the heater part 32 in the head part 3, the conductive paste CP can be heated via the plurality of device chip chips C1 to C4.
　図２は、本発明を具現化する形態の一例の要部を示す概略図である。
図２には、ステージ部２の基板載置台２１と、ヘッド部３のチップ保持部３１とヒータ部３２と、チップ保持部３１の下面で保持されたデバイスチップＣ１～Ｃ４が示されている。さらに、基板載置台２１上には、本発明に係るボンディング装置１で接合対象として扱う基板Ｗが載置されている。 FIG. 2 is a schematic diagram showing a main part of an example of a form embodying the present invention.
FIG. 2 shows the substrate mounting table 21 of the stage unit 2, the chip holding unit 31 and the heater unit 32 of the head unit 3, and device chips C 1 to C 4 held on the lower surface of the chip holding unit 31. Furthermore, a substrate W to be handled as a bonding target in the bonding apparatus 1 according to the present invention is placed on the substrate platform 21.
　なお、本発明に係るボンディング装置１で接合対象として扱う基板Ｗは、その表面に形成された電極パッドＰ１～Ｐ４上に、導電用ペーストＣＰが予め適量塗布されている。さらに、この導電用ペーストＣＰは、接合時の圧力を考慮した上で、例えばスクリーン印刷によって、電極パッドＰ１～Ｐ４の外形より内側に所定の厚みで（つまり、必要量だけ）塗布される。 Note that the substrate W handled as a bonding target in the bonding apparatus 1 according to the present invention has a conductive paste CP applied in advance on the electrode pads P1 to P4 formed on the surface thereof. Further, the conductive paste CP is applied with a predetermined thickness (that is, a necessary amount) inside the outer shape of the electrode pads P1 to P4 by, for example, screen printing in consideration of the pressure at the time of bonding.
　ヘッド昇降機構４は、ステージ部２及びチップ供給部７に対してヘッド部３を上下方向に昇降移動させるものである。ヘッド部３は、ヘッド昇降機構４の可動側部材であるＺ軸スライダー４３に取り付けられている。 The head elevating mechanism 4 moves the head unit 3 up and down with respect to the stage unit 2 and the chip supply unit 7. The head unit 3 is attached to a Z-axis slider 43 that is a movable member of the head lifting mechanism 4.
　図３は、本発明を具現化する形態の一例の全体を示す概略図である。
図１は、ヘッド昇降機構４のＺ軸スライダー４３とヘッド部３が上昇した状態を示しており、図３は、Ｚ軸スライダー４３とヘッド部３が下降した状態を示している。 FIG. 3 is a schematic view showing the whole of an example embodying the present invention.
FIG. 1 shows a state where the Z-axis slider 43 and the head unit 3 of the head lifting mechanism 4 are raised, and FIG. 3 shows a state where the Z-axis slider 43 and the head unit 3 are lowered.
　具体的には、ヘッド昇降機構４は、ベースプレート４１と、ベースプレート４１上に配置したＺ方向に伸びる一対のレール４２と、レール４２上をＺ方向に移動するＺ軸スライダー４６を備えておく。そして、Ｚ軸スライダー４３には、ボールねじ４４を介して回転モータ４５が取り付けられている。回転モータ４５は、外部からの制御信号に基づいて、所定の方向に所定の回転速度で回転し、所定の角度で静止することができる。そのため、外部からの信号制御に基づいて、Ｚ軸スライダー４３を所定の方向に、所定の速度で移動させ、所定の場所で静止させることができる。さらに具体的には、回転モータ４５の回転をメカニカルに制止させる、ブレーキ機構（図示せず）を備えた構成としても良い。また、ヘッド部３は、適宜連結部材３３，３４，３５を介して、Ｚ軸スライダー４３に取り付けられている。そのため、ヘッド部３は、外部からの制御信号に基づいて、上下方向に昇降移動でき、所定の位置で静止することができる。 Specifically, the head lifting mechanism 4 includes a base plate 41, a pair of rails 42 arranged on the base plate 41 and extending in the Z direction, and a Z-axis slider 46 that moves on the rails 42 in the Z direction. A rotation motor 45 is attached to the Z-axis slider 43 via a ball screw 44. The rotation motor 45 can rotate at a predetermined rotation speed in a predetermined direction based on a control signal from the outside, and can stop at a predetermined angle. Therefore, based on signal control from the outside, the Z-axis slider 43 can be moved at a predetermined speed in a predetermined direction and can be stopped at a predetermined location. More specifically, it may be configured to include a brake mechanism (not shown) that mechanically stops the rotation of the rotary motor 45. Further, the head portion 3 is attached to the Z-axis slider 43 through connecting members 33, 34, and 35 as appropriate. Therefore, the head unit 3 can move up and down in the vertical direction based on a control signal from the outside, and can be stationary at a predetermined position.
　また、ヘッド昇降機構４は、上述のような回転モータを用いた形態に限らず、エアシリンダや油圧シリンダーを用いて、Ｚ軸スライダー４３を上下方向に昇降移動させる構成としても良い。 Further, the head elevating mechanism 4 is not limited to the form using the rotary motor as described above, and the Z-axis slider 43 may be moved up and down using an air cylinder or a hydraulic cylinder.
　なお、ヘッド昇降機構４は、ヘッド部３を水平方向に移動する必要がなければ、連結部材１１を介して装置フレーム１０に固定状態で取り付けても良い。この場合、上述のチップ供給部７には、ステージ部２と物理的に干渉しない状態を維持しつつ、チップ載置台７１をヘッド部３の下方まで移動させ、その状態で待機させる機構を備えた構成としておく。 The head elevating mechanism 4 may be fixedly attached to the apparatus frame 10 via the connecting member 11 if it is not necessary to move the head unit 3 in the horizontal direction. In this case, the above-described chip supply unit 7 includes a mechanism for moving the chip mounting table 71 to a position below the head unit 3 and waiting in that state while maintaining a state in which the chip supply unit 7 does not physically interfere with the stage unit 2. Keep it in configuration.
　一方、ヘッド昇降機構４は、Ｘ方向に移動させる必要があれば、図１，３に示すような、Ｘ方向に移動可能な構成としておくことが好ましい。この場合、連結部材１１上に、Ｘ方向に伸びる一対のレール１５を配置し、レール１５上をＸ方向に移動するＸ軸スライダー１６を備えておく。そして、外部からの制御信号に基づいて、Ｘ軸スライダー１６を所定の速度で移動させ、所定の場所で制止させる、Ｘ軸スライダー駆動機構（図示せず）を備えておく。 On the other hand, the head lifting mechanism 4 is preferably configured to be movable in the X direction as shown in FIGS. In this case, a pair of rails 15 extending in the X direction are arranged on the connecting member 11, and an X-axis slider 16 that moves on the rails 15 in the X direction is provided. An X-axis slider drive mechanism (not shown) is provided that moves the X-axis slider 16 at a predetermined speed and stops it at a predetermined location based on a control signal from the outside.
　具体的には、Ｘ軸スライダー駆動機構は、Ｘ軸スライダー１６を、回転モータとボールねじにより駆動するものや、リニアモータにより駆動するもの、エアシリンダや油圧シリンダーにより駆動するものが例示できる。そうすれば、ヘッド部３によりデバイスチップＣ１～Ｃ４をピックアップする場所と、チップデバイスＣ１～Ｃ４を基板Ｗに接合する場所を、個別に設定することができる。 Specifically, examples of the X-axis slider drive mechanism include those in which the X-axis slider 16 is driven by a rotary motor and a ball screw, those that are driven by a linear motor, and those that are driven by an air cylinder or a hydraulic cylinder. By doing so, it is possible to individually set a place where the head unit 3 picks up the device chips C1 to C4 and a place where the chip devices C1 to C4 are bonded to the substrate W.
　ヘッド加振部５は、ヘッド部３を上下方向に加振するものである。具体的には、ヘッド加振部５は、高周波振動発生器５１などが例示でき、連結部材３３，３４を介してヘッド部３が取り付けられている連結部材３５に取り付けておく。高周波振動発生器５１は、外部の制御信号に基づいて、所定の振幅・周波数で、適宜振動する。更に具体的には、高周波振動発生器５１は、その内部に回転モータを備え、その回転モータに取り付けられた偏心おもりが回転することで、矢印５２に示す方向に振動が発生するものが例示できる。或いは、高周波振動発生器５１は、所定の重量を有する振動子が往復動することで、矢印５２に示す方向に振動が発生するものでも良い。 The head vibration unit 5 vibrates the head unit 3 in the vertical direction. Specifically, the head excitation unit 5 can be exemplified by a high-frequency vibration generator 51 or the like, and is attached to the connecting member 35 to which the head unit 3 is attached via the connecting members 33 and 34. The high frequency vibration generator 51 vibrates appropriately with a predetermined amplitude and frequency based on an external control signal. More specifically, the high-frequency vibration generator 51 includes a rotary motor therein, and the eccentric weight attached to the rotary motor rotates to generate vibration in the direction indicated by the arrow 52. . Alternatively, the high-frequency vibration generator 51 may generate a vibration in the direction indicated by the arrow 52 when a vibrator having a predetermined weight reciprocates.
　なお、デバイスチップのボンディングに用いられる導電用ペーストＣＰは、高粘度のため、単なる加圧だけでは均一に押し広げることが難しい。つまり、導電用ペーストＣＰが塗布されている領域の中央部と周辺部とでは、導電用ペーストＣＰの厚みを均一に保ったままで薄く押し広げることが難しい。そのため、接合前のデバイスチップＣ１～Ｃ４を電極パッドＰ１～Ｐ４上に塗布された導電用ペーストＣＰと接触させた後、加振することにより、加振を加えない場合よりもさらに、導電用ペーストＣＰを均一に薄く押し広げつつ、デバイスチップＣ１～Ｃ４と電極パッドＰ１～Ｐ４との間隔を近づけることができる。そのため、本発明に係るボンディング装置１は、特に高粘度の導電用ペーストＣＰが塗布された基板Ｗに対して複数のデバイスチップを接合するのに好適な形態と言える。 Note that the conductive paste CP used for bonding the device chip has a high viscosity, so that it is difficult to spread the paste uniformly by simple pressing. In other words, it is difficult to spread the conductive paste CP thinly while keeping the thickness of the conductive paste CP uniform at the central portion and the peripheral portion of the region where the conductive paste CP is applied. Therefore, by bringing the device chips C1 to C4 before bonding into contact with the conductive paste CP applied on the electrode pads P1 to P4 and then applying the vibration, the conductive paste is further applied as compared with the case where no vibration is applied. The distance between the device chips C1 to C4 and the electrode pads P1 to P4 can be reduced while pushing the CP uniformly and thinly. Therefore, it can be said that the bonding apparatus 1 according to the present invention is a suitable form for bonding a plurality of device chips to the substrate W coated with the highly viscous conductive paste CP.
　ボンディング動作の一連のフローは、以下の通りである。
図４は、本発明を具現化する形態の一例を示すフロー図である。
予めステージ部２には、電極パッドＰ１～Ｐ４に接合用ペーストが塗布された基板Ｗを載置しておく（ｓ１１）。また、デバイスチップ供給部には、接合用デバイスチップＣ１～Ｃ４を所定の位置・方向にアライメントされた状態で並べて配置しておく（ｓ２１）。 A series of flow of the bonding operation is as follows.
FIG. 4 is a flowchart showing an example of a form embodying the present invention.
In advance, a substrate W on which bonding paste is applied to the electrode pads P1 to P4 is placed on the stage unit 2 (s11). In the device chip supply unit, the bonding device chips C1 to C4 are arranged side by side aligned in a predetermined position and direction (s21).
　続いて、ステージ部２の吸着保持を行い（ｓ１２）、基板Ｗの位置アライメントを行っい（ｓ１３）、ステージ部２を接合位置まで移動させ（ｓ１４）、静止させる（ｓ１５）。 Subsequently, the stage unit 2 is sucked and held (s12), the position alignment of the substrate W is performed (s13), the stage unit 2 is moved to the bonding position (s14), and is stopped (s15).
　一方、ヘッド部３を接合用デバイスチップＣ１～Ｃ４をピックアップするために、チップ供給部７の上方の所定の位置へ移動し（ｓ２２）、ヘッド部３を下降させ（ｓ２３）、デバイスチップＣ１～Ｃ４を真空吸着し（ｓ２４）、再びヘッド部３を上昇させ（ｓ２５）、ヘッド部３を接合位置まで移動させ（ｓ２６）、ステージ部３の上方で待機させる（ｓ２７）。 On the other hand, in order to pick up the bonding device chips C1 to C4, the head unit 3 is moved to a predetermined position above the chip supply unit 7 (s22), the head unit 3 is lowered (s23), and the device chips C1 to C4 are moved. C4 is vacuum-sucked (s24), the head unit 3 is raised again (s25), the head unit 3 is moved to the joining position (s26), and is put on standby above the stage unit 3 (s27).
　そして、ステージ部２とヘッド部３が接合可能な状態であれば、ヘッド部３を下降させる（ｓ３１）。ヘッド部３が下降し、基板Ｗの電極パッドＰ１～Ｐ４上に塗布された導電用ペーストＣＰの上にデバイスチップＣ１～Ｃ４が接触したかどうかを判断する（ｓ３２）。なお、この接触判断は、回転モータの電流値が上昇したり、Ｚ軸スライダーの位置や位置変化量の減少に基づいて判断したり、ステージ部２やヘッド部３に予め組み込んでおいた圧力センサの信号出力に基づいて判断したりすることが可能である。 If the stage 2 and the head 3 can be joined, the head 3 is lowered (s31). The head unit 3 is lowered, and it is determined whether or not the device chips C1 to C4 are in contact with the conductive paste CP applied on the electrode pads P1 to P4 of the substrate W (s32). Note that this contact determination is made based on a rise in the current value of the rotary motor, a determination based on a decrease in the position of the Z-axis slider or the position change amount, or a pressure sensor incorporated in advance in the stage unit 2 or the head unit 3. It is possible to make a determination based on the signal output.
　そして、基板Ｗの電極パッドＰ１～Ｐ４上に塗布された導電用ペーストＣＰの上にデバイスチップＣ１～Ｃ４が接触したと判断されれば、ヘッド加振部５を作動させて導電用ペーストＣＰを均一に薄く押し広げる（ｓ３４）。 When it is determined that the device chips C1 to C4 are in contact with the conductive paste CP applied on the electrode pads P1 to P4 of the substrate W, the head vibration unit 5 is operated to apply the conductive paste CP. Spread thinly and uniformly (s34).
　そして、ヒータ部を作動させ（ｓ３５）、デバイスチップＣ１～Ｃ４と電極パッドＰ１～Ｐ４とを接合する。 Then, the heater unit is operated (s35), and the device chips C1 to C4 and the electrode pads P1 to P4 are joined.
　デバイスチップＣ１～Ｃ４と電極パッドＰ１～Ｐ４とが接合されれば（ｓ３７）、ヘッド部３の真空吸着や、ヘッド加振部・ヒータ部の各部を作動状態から停止状態にし（ｓ３８）、ヘッド部３を上昇させる（ｓ３９）。 If the device chips C1 to C4 and the electrode pads P1 to P4 are joined (s37), the vacuum suction of the head part 3 and the head vibration part / heater part are changed from the operating state to the stopped state (s38). The part 3 is raised (s39).
　そして、ステージ部２を基板入れ替え位置へ移動させ（ｓ４０）、基板の吸着状態を解除し（ｓ４１）、デバイスチップＣ１～Ｃ４が接合された基板を取り出す（ｓ４２）。 Then, the stage unit 2 is moved to the substrate replacement position (s40), the adsorption state of the substrate is released (s41), and the substrate to which the device chips C1 to C4 are bonded is taken out (s42).
　本発明に係るボンディング装置１は、上述の各機器を制御するための制御部をさらに備え、人が介在しながら半自動で、若しくは、ボンディング動作や諸条件を予め設定しておき、プログラムに基づいて自動的に、上述した一連のボンディング動作（ｓ１１～ｓ４２）
を行う。 The bonding apparatus 1 according to the present invention further includes a control unit for controlling each of the above-described devices, semi-automatically with human intervention, or presetting bonding operation and various conditions, and based on a program. Automatically, the series of bonding operations described above (s11 to s42)
I do.
　本発明に係るボンディング装置１は、上述のような構成をしているため、基板Ｗの表面上に設けられた複数の電極パッドＰ１～Ｐ４上に、複数のデバイスチップＣ１～Ｃ４を同時に接合することができる。その上、基板Ｗの表面にうねりなどがあり、各電極パッドＰ１～Ｐ４と、その上に接合される各デバイスチップＣ１～Ｃ４との間隔にバラツキがあったとしても、導電用ペーストＣＰが均一に塗り広げられた状態で接合が行われる。そのため、複数チップを同時に接合する際に、複数のデバイスチップと電極パッドとの接合不良を防ぐことができる。 Since the bonding apparatus 1 according to the present invention has the above-described configuration, the plurality of device chips C1 to C4 are simultaneously bonded onto the plurality of electrode pads P1 to P4 provided on the surface of the substrate W. be able to. In addition, the conductive paste CP is uniform even if the surface of the substrate W has waviness and the spacing between the electrode pads P1 to P4 and the device chips C1 to C4 bonded thereon varies. Bonding is performed in a state of being spread over. Therefore, when bonding a plurality of chips simultaneously, it is possible to prevent a bonding failure between the plurality of device chips and the electrode pads.
　［別の形態］
なお、本発明の適用にあたり、ヘッド加振部５は、図１，３を用いて上述したような、高周波振動発生器５１をヘッド部３に取り付けた構成に限定されず、図５，６に示すような構成のヘッド加振部５ａとしても良い。 [Another form]
In applying the present invention, the head vibration unit 5 is not limited to the configuration in which the high-frequency vibration generator 51 is attached to the head unit 3 as described above with reference to FIGS. The head vibration unit 5a having the configuration as shown may be used.
　図５，６は、本発明を具現化する形態の別の一例の全体を示す概略図である。
なお、図５は、ヘッド部３が上昇した状態を示しており、図６は、ヘッド部３が下降した状態を示している。 5 and 6 are schematic views showing the whole of another example embodying the present invention.
5 shows a state in which the head unit 3 is raised, and FIG. 6 shows a state in which the head unit 3 is lowered.
　本発明に係るボンディング装置１ａは、ボンディング装置１と共通する構成のステージ部２，ヘッド部３を備えつつ、異なる構成のヘッド昇降部４ａを備えて構成されている。　 A bonding apparatus 1a according to the present invention includes a stage part 2 and a head part 3 having the same configuration as the bonding apparatus 1, and a head lifting / lowering part 4a having a different configuration. *
　ヘッド昇降機構４ａは、ステージ部２に対してヘッド部３を上下方向に昇降移動させるものである。ヘッド部３は、ヘッド昇降機構４ａの可動側部材であるシャフト４７に取り付けられている。 The head elevating mechanism 4a moves the head unit 3 up and down with respect to the stage unit 2. The head unit 3 is attached to a shaft 47 which is a movable side member of the head lifting mechanism 4a.
　具体的には、ヘッド昇降機構４ａは、直動シリンダーユニット４０ａにより構成されている。直動シリンダーユニット４０ａは、筐体４６と、シャフト４７と、シャフト４７を出し入れするための加圧流体供給ポート４６ａ，４６ｂを備えて構成されている。筐体４６は、その内部が密閉された中空になっており、加圧流体供給ポート４６ａ，４６ｂに供給される流体の圧力差により、シャフト４７に接続された弁板４８が、筐体４６内で往復動作するように構成されている。 Specifically, the head elevating mechanism 4a is composed of a linear cylinder unit 40a. The linear cylinder unit 40a includes a housing 46, a shaft 47, and pressurized fluid supply ports 46a and 46b for taking the shaft 47 in and out. The casing 46 is hollow and sealed inside, and a valve plate 48 connected to the shaft 47 is provided in the casing 46 due to a pressure difference between the fluids supplied to the pressurized fluid supply ports 46a and 46b. Is configured to reciprocate.
　より具体的には、直動シリンダーユニット４０ａの加圧流体供給ポート４６ａ側の圧力ｆ１ａが、加圧流体供給ポート４６ｂ側の圧力ｆ１ｂよりも小さくなる（例えば、加圧流体供給ポート４６ａ側を大気解放し、加圧流体供給ポート４６ｂ側に圧縮エアを供給する）状態にすれば、図５に示すように、シャフト４７とヘッド部３が上昇した状態となる。 More specifically, the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a is smaller than the pressure f1b on the pressurized fluid supply port 46b side (for example, the pressurized fluid supply port 46a side is connected to the atmosphere). If released and the compressed air is supplied to the pressurized fluid supply port 46b), the shaft 47 and the head portion 3 are raised as shown in FIG.
　逆に、直動シリンダーユニット４０ａの加圧流体供給ポート４６ａ側の圧力ｆ１ａが、加圧流体供給ポート４６ｂ側の圧力ｆ１ｂよりも大きくなる（例えば、加圧流体供給ポート４６ａ側に圧縮エアを供給し、加圧流体供給ポート４６ｂ側を大気解放する）状態にすれば、図６に示すように、シャフト４７とヘッド部３がステージ部２側に下降した状態となる。 Conversely, the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a becomes larger than the pressure f1b on the pressurized fluid supply port 46b side (for example, compressed air is supplied to the pressurized fluid supply port 46a side). When the pressurized fluid supply port 46b side is released to the atmosphere, the shaft 47 and the head unit 3 are lowered to the stage unit 2 side as shown in FIG.
　ヘッド加振部５ａは、ヘッド部３をステージ部２側に下降させた状態で、ヘッド昇降機構４ａの昇降動作を繰り返すことにより、ヘッド部３を上下方向に加振するものである。具体的には、ヘッド加振部５ａは、ヘッド昇降機構４ａの直動シリンダーユニット４０ａの往復動作を高速で切り替えることにより具現化できる。 The head vibration unit 5a vibrates the head unit 3 in the vertical direction by repeating the lifting operation of the head lifting mechanism 4a with the head unit 3 lowered to the stage unit 2 side. Specifically, the head vibration unit 5a can be realized by switching the reciprocating operation of the linear cylinder unit 40a of the head lifting mechanism 4a at high speed.
　図７は、本発明を具現化する形態の別の一例におけるタイムチャートである。
図７（ａ）は、縦軸をヘッド部の高さＺｈ、横軸を時刻ｔとし、ヘッド部３の高さの経時変化を示す図である。
図７（ｂ）は、縦軸を圧力ｆ、横軸を時刻ｔとし、直動シリンダーユニット４０に供給する圧力差（ｆ１ａ－ｆ１ｂ）の経時変化を示す図である。 FIG. 7 is a time chart in another example of a form embodying the present invention.
FIG. 7A is a diagram showing the temporal change in the height of the head unit 3 with the vertical axis representing the height Zh and the horizontal axis representing time t.
FIG. 7B is a diagram showing the change over time in the pressure difference (f1a−f1b) supplied to the linear cylinder unit 40, with the pressure f on the vertical axis and the time t on the horizontal axis.
　より具体的には、直動シリンダーユニット４０ａのシャフト４７を下降させて、ヘッド部３を上昇端位置からペースト接触位置（デバイスチップＣ１～Ｃ４と導電用ペーストＣＰとが接触する位置）まで下降させる（図６に示す状態）。さらに、ヘッド部３をステージ部２側に下降させた状態にしつつ、シャフト４７を上下方向に昇降移動させる圧力（ｆ１ａ，ｆ１ｂ）を高速で（例えば、１０～数百Ｈｚで）切り替わるように、加圧流体供給ポート４６ａ，４６ｂに導入するエア圧や油圧を反転させる制御を行う。 More specifically, the shaft 47 of the linear cylinder unit 40a is lowered, and the head unit 3 is lowered from the raised end position to the paste contact position (position where the device chips C1 to C4 and the conductive paste CP are in contact). (State shown in FIG. 6). Further, the pressure (f1a, f1b) for moving the shaft 47 up and down is switched at high speed (for example, at 10 to several hundred Hz) while the head unit 3 is lowered to the stage unit 2 side. Control is performed to reverse the air pressure and hydraulic pressure introduced into the pressurized fluid supply ports 46a and 46b.
　そして、所定の加振動作を行った後、ヘッド部３のヒータ部３２を作動させて加熱を開始する。 Then, after performing a predetermined vibration operation, the heater unit 32 of the head unit 3 is operated to start heating.
　なお上述では、図５，６に示したように、直動シリンダーユニット４０を用いて、ヘッド昇降機構４ａ、５ａを構成した形態を例示した。しかし、本発明に係るヘッド昇降機構とは、これ以外の形態でも良く、例えば、図１，３に示したような、ボールねじ４４と回転モータ４５によりＺ軸スライダー４３が上下方向に昇降する、ヘッド昇降機構４を用いた形態でも具現化できる。この場合、回転モータ４５を、Ｚ軸スライダー４３が下降する側の回転トルクが高速で強弱するように、回転方向を高速で（例えば、１０～数百Ｈｚで）反転させる制御を行う。 In the above description, as shown in FIGS. 5 and 6, the form in which the head elevating mechanisms 4 a and 5 a are configured using the linear cylinder unit 40 is illustrated. However, the head lifting mechanism according to the present invention may have other forms, for example, as shown in FIGS. 1 and 3, the Z-axis slider 43 is moved up and down by the ball screw 44 and the rotary motor 45. A form using the head lifting mechanism 4 can also be realized. In this case, the rotation motor 45 is controlled to reverse the rotation direction at a high speed (for example, at 10 to several hundred Hz) so that the rotational torque on the side where the Z-axis slider 43 descends increases and decreases at high speed.
　本発明に係るボンディング装置１ａは、上述のような構成をしているため、ヘッド部３を加振するための構成を簡素化しつつ、確実に導電用ペーストＣＰが均一に塗り広げることができる。 Since the bonding apparatus 1a according to the present invention has the above-described configuration, the conductive paste CP can be spread uniformly and reliably while simplifying the configuration for exciting the head unit 3.
　［別の形態］
なお、図５，６を用いて上述した本発明に係るボンディング装置１ａは、ヘッド部３の昇降移動を上下方向に規制する昇降ガイド部４９をさらに備え、ヘッド部３が取り付けられた昇降ガイド部４９の可動側部材であるシャフト４９ｓと、ヘッド昇降機構４ａの可動側部材であるシャフト４７とが、球面軸受Ｓを介して連結されている構成とすることが好ましい。 [Another form]
The bonding apparatus 1a according to the present invention described above with reference to FIGS. 5 and 6 further includes an elevating guide part 49 for regulating the elevating movement of the head part 3 in the vertical direction, and the elevating guide part to which the head part 3 is attached. It is preferable that a shaft 49s, which is a movable side member 49, and a shaft 47, which is a movable side member of the head lifting mechanism 4a, are connected via a spherical bearing S.
　具体的には、昇降ガイド部４９は、Ｚ方向に所定の長さを有する円柱状のシャフト４９ｓと、リニアブッシュ４９ｂとを備えて構成されている。リニアブッシュ４９ｂは、ベースプレート４１上に取り付けられており、シャフト４９ｓがＺ方向にのみ移動可能な構成をしている。 Specifically, the elevating guide part 49 includes a columnar shaft 49s having a predetermined length in the Z direction and a linear bush 49b. The linear bush 49b is attached on the base plate 41, and the shaft 49s can move only in the Z direction.
　この形態であれば、ヘッド昇降機構４ａの剛性を保つことが難しく、ヘッド部３が水平方向にぶれが生じやすい場合に、ヘッド昇降機構４ａの水平方向の剛性を高め、ヘッド部３が水平方向にぶれてしまうことを防ぐことができる。特に、この構成であれば、ヘッド部３を下降させ、デバイスチップＣ１～Ｃ４を電極パッドＰ１～Ｐ４側に押さえつけたときに生じやすい、ヘッド部３の水平方向のぶれを無くし、常に下向きの押しつけ力が作用させることができる。そのため、デバイスチップＣ１～Ｃ４が、隣接する他の電極パッドやその上に塗布された導電用ペーストＣＰと短絡してしまうことを防ぐことができる。 With this configuration, it is difficult to maintain the rigidity of the head elevating mechanism 4a, and when the head part 3 is likely to shake in the horizontal direction, the rigidity of the head elevating mechanism 4a is increased, so that the head part 3 is in the horizontal direction. It can be prevented from being shaken. In particular, with this configuration, the head 3 is lowered and the horizontal displacement of the head 3 that is likely to occur when the device chips C1 to C4 are pressed against the electrode pads P1 to P4 is eliminated. Force can be applied. Therefore, it is possible to prevent the device chips C1 to C4 from being short-circuited with other adjacent electrode pads or the conductive paste CP applied thereon.
　さらに、シャフト４７とシャフト４９ｓは、球面軸受Ｓを介して連結されているため、上下方向のガタ付きが無い。そのため、ヘッド部３に加えられる上下方向の加振力が、減衰されずに伝わり、効率よく導電用ペーストＣＰを押し広げることができる。 Furthermore, since the shaft 47 and the shaft 49s are connected via the spherical bearing S, there is no backlash in the vertical direction. Therefore, the vertical excitation force applied to the head part 3 is transmitted without being attenuated, and the conductive paste CP can be efficiently spread.
　［別の形態］
なお、本発明の適用にあたり、本発明に係るボンディング装置１，１ａは、ヘッド加圧部６をさらに備えた構成としても良い。 [Another form]
In applying the present invention, the bonding apparatus 1, 1 a according to the present invention may be configured to further include the head pressurizing unit 6.
　ヘッド加圧部６は、ヘッド部３をステージ部２側に向けてさらに加圧するものである。
具体的には、ヘッド加圧部６は、図５，６に示すような構成とすることができる。つまり、ヘッド加圧部６は、ヘッド部３に取り付けられた連結部材を介して、ヘッド部３を上下方向に移動させるための可動側部材であるシャフト４９ａを、ステージ部２側にさらに押さえつける機構を備えた構成をしている。 The head pressurization unit 6 further pressurizes the head unit 3 toward the stage unit 2 side.
Specifically, the head pressure unit 6 can be configured as shown in FIGS. That is, the head pressure unit 6 is a mechanism that further presses the shaft 49a, which is a movable side member for moving the head unit 3 in the vertical direction, to the stage unit 2 side via the connecting member attached to the head unit 3. It has a configuration with.
　より具体的には、ヘッド加圧部６は、直動シリンダーユニット６０と、押さえ部材６５とを備えて構成されている。直動シリンダーユニット６０は、筐体６１と、シャフト６２と、シャフト６２を出し入れするための加圧流体供給ポート６１ａ，６１ｂを備えて構成されている。筐体６１は、その内部が密閉された中空になっており、加圧流体供給ポート６１ａ，６１ｂに供給される流体の圧力差により、シャフト６２に接続された弁板６３が、筐体６１内で往復動作するように構成されている。 More specifically, the head pressure unit 6 includes a linear cylinder unit 60 and a pressing member 65. The linear cylinder unit 60 includes a housing 61, a shaft 62, and pressurized fluid supply ports 61a and 61b for taking the shaft 62 in and out. The casing 61 is hollow with its inside sealed, and a valve plate 63 connected to the shaft 62 is formed in the casing 61 by the pressure difference between the fluids supplied to the pressurized fluid supply ports 61a and 61b. Is configured to reciprocate.
　シャフト６２の一端は、押さえ部材６５と、ナックルジョイント６７を介して取り付けられている。押さえ部材６５は、直線型若しくは略Ｌ字型（略Ｖ字型を含む）の形状をしており、ナックルジョイント６６を介して、装置フレーム１０の連結部材１１に取り付けられている。 One end of the shaft 62 is attached via a pressing member 65 and a knuckle joint 67. The holding member 65 has a linear shape or a substantially L shape (including a substantially V shape), and is attached to the connecting member 11 of the apparatus frame 10 via a knuckle joint 66.
　このような構成をしているため、押さえ部材６５は、シャフト６２の往復動作に伴い、ナックルジョイント６６の軸部を中心として、先端部６８が上下方向に回動する構成をしている。 Because of such a configuration, the pressing member 65 is configured such that the tip portion 68 rotates in the vertical direction around the shaft portion of the knuckle joint 66 as the shaft 62 reciprocates.
　より具体的には、直動シリンダーユニット６０の加圧流体供給ポート６１ａ側の圧力ｆ２ａが、加圧流体供給ポート６１ｂ側の圧力ｆ２ｂよりも大きくなる（例えば、加圧流体供給ポート６１ａ側に圧縮エアを供給し、加圧流体供給ポート６１ｂ側を大気解放する）状態にすれば、図５に示すように、シャフト６２は矢印６２ｖに示す方向に下がり、押さえ部材６５の先端部６８は、矢印６８ｖに示す方向に上昇した状態となる。この状態では、先端部６８がヘッド３に連結されている連結部材３６と離れており、ヘッド部３をステージ部２側に押さえつける押し付け力は作用していない。 More specifically, the pressure f2a on the pressurized fluid supply port 61a side of the linear cylinder unit 60 becomes larger than the pressure f2b on the pressurized fluid supply port 61b side (for example, compressed to the pressurized fluid supply port 61a side). If air is supplied and the pressurized fluid supply port 61b side is released to the atmosphere), as shown in FIG. 5, the shaft 62 is lowered in the direction indicated by the arrow 62v, and the tip 68 of the pressing member 65 is It will be in the state raised to the direction shown to 68v. In this state, the distal end portion 68 is separated from the connecting member 36 connected to the head 3, and the pressing force for pressing the head portion 3 against the stage portion 2 side does not act.
　逆に、直動シリンダーユニット６０の加圧流体供給ポート６１ａ側の圧力ｆ２ａが、加圧流体供給ポート６２ｂ側の圧力ｆ２ｂよりも小さくなる（例えば、加圧流体供給ポート６１ａ側を大気解放し、加圧流体供給ポート４６ｂ側に圧縮エアを供給する）状態にすれば、図６に示すように、シャフト６２は矢印６２ｖに示す方向に上がり、押さえ部材６５の先端部６８は、矢印６８ｖに示す方向に下降した状態となる。この状態では、先端部６８がヘッド３に連結されている連結部材３６を押さえ付けており、ヘッド部３をステージ部２側に押さえつける押し付け力が作用する。 Conversely, the pressure f2a on the pressurized fluid supply port 61a side of the direct acting cylinder unit 60 is smaller than the pressure f2b on the pressurized fluid supply port 62b side (for example, the pressurized fluid supply port 61a side is released to the atmosphere, 6), the shaft 62 rises in the direction indicated by the arrow 62v, and the distal end portion 68 of the pressing member 65 is indicated by the arrow 68v. It will be in a state of descending in the direction. In this state, the distal end portion 68 presses the connecting member 36 connected to the head 3, and a pressing force that presses the head portion 3 against the stage portion 2 side acts.
　このような構成をしているため、ヘッド加圧部６を備えたボンディング装置は、ヘッド昇降部の下降動作とヘッド加振部の加振により導電用ペーストＣＰが押し広げられた後、デバイスチップＣ１～Ｃ４と電極パッドＰ１～Ｐ４との間隔を維持することができる。さらには、デバイスチップＣ１～Ｃ４を基板Ｗ側にさらに押し込んで、僅かながら電極パッドＰ１～Ｐ４との間隔を近づけることができる。 Due to such a configuration, the bonding apparatus including the head pressurizing unit 6 has a device chip after the conductive paste CP is pushed and spread by the head lifting / lowering operation and the head vibrating unit. The distance between C1 to C4 and the electrode pads P1 to P4 can be maintained. Furthermore, the device chips C1 to C4 can be further pushed into the substrate W side to slightly close the distance from the electrode pads P1 to P4.
　このとき、ヘッド加圧部６は、押さえ部材６５の先端部６８が連結部材３６に接する点を押し込み力の作用点とし、連結部材３６上の当該作用点には、ヘッド部３をステージ部２に向けて押し付ける力がはたらく構成をしている。そのため、ヘッド加圧部３でヘッド部３を押し込む力を大きく設定しても、ヘッド昇降部４の上下動作に頼らずに加圧することができる。そうすることで、ヘッド昇降部４のみにより加圧力を付与した場合に生じる様な、Ｘ軸スライダー１５やヘッド昇降機構４の直動ガイド部分に余分なストレスが加わることを防ぐことができる。 At this time, the head pressure unit 6 uses the point where the tip 68 of the pressing member 65 contacts the connecting member 36 as an action point of the pressing force, and the head part 3 is placed on the stage part 2 at the action point on the connecting member 36. It has a structure in which the force of pressing toward the side works. For this reason, even if the force for pushing the head unit 3 by the head pressurizing unit 3 is set large, the pressure can be applied without depending on the vertical movement of the head elevating unit 4. By doing so, it is possible to prevent extra stress from being applied to the X-axis slider 15 and the linear motion guide portion of the head elevating mechanism 4 as occurs when the pressure is applied only by the head elevating unit 4.
　そのため、ステージ部２とヘッド部３の平行度を維持した状態で、デバイスチップと電極パッドを接合するためにデバイスチップＣ１～Ｃ４を加熱し、導電用ペーストＣＰの溶剤が揮発して体積減少しても、接触面積全面に導電用ペーストＣＰが行き渡った状態で接合を終えることができる。 Therefore, the device chips C1 to C4 are heated in order to join the device chip and the electrode pad while maintaining the parallelism of the stage unit 2 and the head unit 3, and the solvent of the conductive paste CP is volatilized to reduce the volume. However, the bonding can be completed in a state where the conductive paste CP is spread over the entire contact area.
　［別の形態］
図８は、本発明を具現化する形態のさらに別の一例の要部を示す側面図である。
図８に示す形態は、図５，６に示した構成とは異なり、ヘッド部３を上下方向に移動させるための可動側部材であるシャフト４９ａ１の先端部が露出している。さらに、シャフト４９ａ１の先端部側面には連結部材３６ａが取り付けられており、連結部材３６ａに球面軸受けＳが取り付けられている。つまり、ヘッド加圧部６は、押さえ部材６５の先端部６８が連結部材４９ａ１に接する点を押し込み力の作用点とし、連結部材４９ａ１の先端部の当該作用点には、ヘッド部３をステージ部２に向けて押し付ける力がはたらく構成をしている。その他の構成は、図５，６に示した構成と同様である。 [Another form]
FIG. 8: is a side view which shows the principal part of another example of the form which embodies this invention.
The form shown in FIG. 8 differs from the configuration shown in FIGS. 5 and 6 in that the tip of the shaft 49a1, which is a movable side member for moving the head part 3 in the vertical direction, is exposed. Further, a connecting member 36a is attached to the side surface of the distal end portion of the shaft 49a1, and a spherical bearing S is attached to the connecting member 36a. That is, the head pressure unit 6 uses the point where the tip 68 of the pressing member 65 contacts the connecting member 49a1 as an action point of the pressing force, and the head 3 is placed on the stage at the action point of the tip of the connecting member 49a1. The structure is such that the force pressing toward 2 works. Other configurations are the same as those shown in FIGS.
　そのため、図８に示す形態は、ヘッド加圧部６の作用点である押さえ部材６５の先端部６８が、直接シャフト４９ａ１に接触し、シャフト４９ａ１を押さえ付けることにより、ヘッド部３をステージ部２側にさらに押さえつけることができ、上述の形態と同様に、ステージ部２とヘッド部３の平行度を維持した状態で、デバイスチップと電極パッドを接合するためにデバイスチップＣ１～Ｃ４を加熱し、導電用ペーストＣＰの溶剤が揮発して体積減少しても、接触面積全面に導電用ペーストＣＰが行き渡った状態で接合を終えることができる。 Therefore, in the embodiment shown in FIG. 8, the tip portion 68 of the pressing member 65, which is the point of action of the head pressurizing portion 6, directly contacts the shaft 49a1 and presses the shaft 49a1, thereby causing the head portion 3 to move to the stage portion 2. The device chips C1 to C4 are heated in order to join the device chip and the electrode pad in a state where the parallelism between the stage unit 2 and the head unit 3 is maintained, as in the above-described form. Even if the solvent of the conductive paste CP is volatilized and the volume is reduced, the bonding can be completed in a state where the conductive paste CP is spread over the entire contact area.
　［別の形態］
上述の説明では、導電用ペーストＣＰを加熱するヒータ部３２が、ヘッド部３に備えられている構成を例示した。しかし、本発明を具現化する上では、この形態に限定されず、ステージ部２に組み込んだヒータ部により、導電ペーストＣＰを基板Ｗ側から加熱する形態としても良い。具体的には、ヒータ部は、ステージ部２の基板載置台２１にセラミックヒータやシーズヒータ、ラバーヒータやなどを組み込んだ構成とし外部からの電圧や電圧制御により、加熱ＯＮ／ＯＦを切り替えたり、加熱温度が設定できるようにしておく。或いは、基板載置台２１の表面を透明ガラスで構成し、基板Ｗが載置される部分にＩＴＯ電極をパターニングし、このＩＴＯ電極に電流・電圧を印加することにより基板Ｗを加熱できる構成（いわゆる、ガラスヒータ）としても良い。 [Another form]
In the above description, the configuration in which the heater unit 32 for heating the conductive paste CP is provided in the head unit 3 has been exemplified. However, in realizing the present invention, the present invention is not limited to this form, and the conductive paste CP may be heated from the substrate W side by a heater part incorporated in the stage part 2. Specifically, the heater unit has a structure in which a ceramic heater, a sheathed heater, a rubber heater, or the like is incorporated in the substrate mounting table 21 of the stage unit 2, and heating ON / OF is switched by external voltage or voltage control. The heating temperature can be set. Alternatively, the surface of the substrate mounting table 21 is made of transparent glass, an ITO electrode is patterned on a portion on which the substrate W is mounted, and the substrate W can be heated by applying a current / voltage to the ITO electrode (so-called configuration) Glass heater).
　さらに、導電用ペーストＣＰを加熱するヒータ部は、ヘッド部２とステージ部２の双方に備えた構成であっても良い。そうすることで、接合のための加熱時間が短くて済むため、生産効率を向上させることができる。 Further, the heater unit for heating the conductive paste CP may be provided in both the head unit 2 and the stage unit 2. By doing so, since the heating time for joining can be shortened, the production efficiency can be improved.
　　１　　ボンディング装置
　　２　　ステージ部
　　３　　ヘッド部
　　４　　ヘッド昇降機構
　　５　　ヘッド加振部
　　６　　ヘッド加圧部
　　７　　チップ供給部
　１０　　装置フレーム
　１１　　連結部材
　１５　　レール
　１６　　Ｘ軸スライダー
　２１　　基板載置台
　２５　　レール
　２６　　Ｙ軸スライダー
　３１　　チップ保持部
　３２　　ヒータ部
　３３　　連結部材
　３４　　連結部材
　３５　　連結部材
　４０　　直動駆動ユニット
　４０ａ　直動シリンダーユニット
　４１　　ベースプレート
　４２　　レール
　４３　　Ｚ軸スライダー
　４４　　ボールねじ
　４５　　回転モータ
　４６　　筐体
　４６ａ　加圧流体供給ポート
　４６ｂ　加圧流体供給ポート
　４７　　シャフト
　４８　　弁板
　４９　　昇降ガイド部
　４９ｓ　シャフト
　４９ｂ　リニアブッシュ
　５１　　高周波振動発生器
　５２　　矢印（加振方向）
　６０　　直動シリンダーユニット
　６１　　筐体
　６１ａ　加圧流体供給ポート
　６１ｂ　加圧流体供給ポート
　６２　　シャフト
　６２ｖ　矢印（シャフト移動方向）
　６３　　弁板
　６５　　押さえ部材
　６６　　ナックルジョイント
　６７　　ナックルジョイント
　６８　　先端部
　６８ｖ　矢印（回動方向）
　７１　　チップ載置台
　７２　　凹み部
　　Ｓ　　球面軸受
　　Ｗ　　基板
　Ｃ１～Ｃ４　デバイスチップ
　Ｐ１～Ｐ４　電極パッド
　ＣＰ　　導電用ペースト DESCRIPTION OF SYMBOLS 1 Bonding apparatus 2 Stage part 3 Head part 4 Head raising / lowering mechanism 5 Head vibration part 6 Head pressurization part 7 Chip supply part 10 Device frame 11 Connection member 15 Rail 16 X-axis slider 21 Substrate mounting table 25 Rail 26 Y-axis slider 31 Chip holding part 32 Heater part 33 Connecting member 34 Connecting member 35 Connecting member 40 Linear motion drive unit 40a Linear motion cylinder unit 41 Base plate 42 Rail 43 Z-axis slider 44 Ball screw 45 Rotating motor 46 Housing 46a Pressurized fluid supply port 46b Addition Pressure fluid supply port 47 Shaft 48 Valve plate 49 Elevating guide part 49s Shaft 49b Linear bush 51 High frequency vibration generator 52 Arrow (Excitation direction)
60 Linear Motion Cylinder Unit 61 Housing 61a Pressurized Fluid Supply Port 61b Pressurized Fluid Supply Port 62 Shaft 62v Arrow (Shaft Movement Direction)
63 Valve plate 65 Holding member 66 Knuckle joint 67 Knuckle joint 68 Tip 68v Arrow (rotation direction)
71 Chip mounting table 72 Recessed portion S Spherical bearing W Substrate C1 to C4 Device chip P1 to P4 Electrode pad CP Conductive paste

Claims (4)

  1. 　基板表面に設けられた複数の電極パッド上に、複数のデバイスチップを接合するボンディング装置であって、
    　前記基板を水平方向に載置するステージ部と、
    前記基板上の電極パッドの位置・間隔に対応させた状態で前記複数のデバイスチップを供給するチップ供給部と、
    前記基板上にボンディングする複数のデバイスチップを一度に保持するヘッド部と、
    前記ステージ部に対して前記ヘッド部を上下方向に昇降移動させるヘッド昇降機構と、
    前記ヘッド部を上下方向に加振するヘッド加振部とを備え、
    　前記ヘッド部には、前記複数のデバイスチップを加熱するヒータ部が備えられ、
    　前記基板表面上に設けられた前記複数の電極パッド上に、前記複数のデバイスチップを同時に接合することを特徴とする、ボンディング装置。
    A bonding apparatus for bonding a plurality of device chips on a plurality of electrode pads provided on a substrate surface,
    A stage portion for placing the substrate in a horizontal direction;
    A chip supply unit for supplying the plurality of device chips in a state corresponding to the positions and intervals of the electrode pads on the substrate;
    A head portion for holding a plurality of device chips bonded on the substrate at a time;
    A head elevating mechanism that moves the head unit up and down with respect to the stage unit;
    A head excitation unit for exciting the head unit in the vertical direction,
    The head unit includes a heater unit for heating the plurality of device chips,
    A bonding apparatus, wherein the plurality of device chips are simultaneously bonded onto the plurality of electrode pads provided on the substrate surface.
  2. 　前記ヘッド加振部は、前記ヘッド部を前記ステージ部側に下降させた状態で、前記ヘッド昇降機構の昇降動作を繰り返すことにより、当該ヘッド部を上下方向に加振するものである
    ことを特徴とする、請求項１に記載のボンディング装置。
    The head vibration unit is configured to vibrate the head unit in the vertical direction by repeating the lifting operation of the head lifting mechanism while the head unit is lowered to the stage unit side. The bonding apparatus according to claim 1.
  3. 　前記ヘッド部の昇降移動を上下方向に制限する昇降ガイド部をさらに備え、
    　前記ヘッド部が取り付けられた前記昇降ガイド部の可動側部材と、前記ヘッド昇降機構の可動側部材とが、球面軸受けを介して連結されている
    ことを特徴とする、請求項２に記載のボンディング装置。
    An elevating guide for limiting the elevating movement of the head in the vertical direction;
    The bonding according to claim 2, wherein the movable side member of the elevating guide unit to which the head unit is attached and the movable side member of the head elevating mechanism are connected via a spherical bearing. apparatus.
  4. 　前記ヘッド部を前記ステージ部側に向けてさらに加圧するヘッド加圧部をさらに備えた
    ことを特徴とする、請求項１～３のいずれかに記載のボンディング装置。     4. The bonding apparatus according to claim 1, further comprising a head pressurizing unit that further pressurizes the head unit toward the stage unit.
PCT/JP2014/074366 2013-09-25 2014-09-16 Bonding apparatus WO2015045935A1 (en)

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Citations (8)

* Cited by examiner, † Cited by third party
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JPH09274066A (en) * 1996-02-07 1997-10-21 Fujitsu Ltd Semiconductor tester, testing method utilizing tester thereof and semiconductor device
WO2001041209A1 (en) * 1999-11-30 2001-06-07 Toray Engineering Co., Ltd. Chip bonding device
JP2004056029A (en) * 2002-07-24 2004-02-19 Matsushita Electric Ind Co Ltd Device and method for mounting electronic component
JP2004087705A (en) * 2002-08-26 2004-03-18 Juki Corp Die bonding equipment and method
JP2004193442A (en) * 2002-12-13 2004-07-08 Matsushita Electric Ind Co Ltd Electronic component mounting apparatus
JP2004363399A (en) * 2003-06-05 2004-12-24 Sony Corp Die bonding method of electronic component and die bonder
JP2006203081A (en) * 2005-01-21 2006-08-03 Yamaha Motor Co Ltd Component transfer device and surface mounting machine having the same
WO2009125748A1 (en) * 2008-04-07 2009-10-15 株式会社アドウェルズ Support device for resonator

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09274066A (en) * 1996-02-07 1997-10-21 Fujitsu Ltd Semiconductor tester, testing method utilizing tester thereof and semiconductor device
WO2001041209A1 (en) * 1999-11-30 2001-06-07 Toray Engineering Co., Ltd. Chip bonding device
JP2004056029A (en) * 2002-07-24 2004-02-19 Matsushita Electric Ind Co Ltd Device and method for mounting electronic component
JP2004087705A (en) * 2002-08-26 2004-03-18 Juki Corp Die bonding equipment and method
JP2004193442A (en) * 2002-12-13 2004-07-08 Matsushita Electric Ind Co Ltd Electronic component mounting apparatus
JP2004363399A (en) * 2003-06-05 2004-12-24 Sony Corp Die bonding method of electronic component and die bonder
JP2006203081A (en) * 2005-01-21 2006-08-03 Yamaha Motor Co Ltd Component transfer device and surface mounting machine having the same
WO2009125748A1 (en) * 2008-04-07 2009-10-15 株式会社アドウェルズ Support device for resonator

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