WO2015104890A1 - Automatic bonding apparatus - Google Patents

Automatic bonding apparatus Download PDF

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Publication number
WO2015104890A1
WO2015104890A1 PCT/JP2014/079391 JP2014079391W WO2015104890A1 WO 2015104890 A1 WO2015104890 A1 WO 2015104890A1 JP 2014079391 W JP2014079391 W JP 2014079391W WO 2015104890 A1 WO2015104890 A1 WO 2015104890A1
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WO
WIPO (PCT)
Prior art keywords
substrate
unit
bonding
paste
head
Prior art date
Application number
PCT/JP2014/079391
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French (fr)
Japanese (ja)
Inventor
浩光 和田
Original Assignee
東レエンジニアリング株式会社
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Publication date
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Publication of WO2015104890A1 publication Critical patent/WO2015104890A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
    • H05K7/20136—Forced ventilation, e.g. by fans
    • H05K7/20172—Fan mounting or fan specifications
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20536—Modifications to facilitate cooling, ventilating, or heating for racks or cabinets of standardised dimensions, e.g. electronic racks for aircraft or telecommunication equipment
    • H05K7/20554—Forced ventilation of a gaseous coolant
    • H05K7/20563—Forced ventilation of a gaseous coolant within sub-racks for removing heat from electronic boards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/2732—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/277—Manufacturing methods involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H01L2224/7592—Load or pressure adjusting means, e.g. sensors
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/37—Effects of the manufacturing process
    • H01L2924/3701—Effects of the manufacturing process increased through put

Definitions

  • the present invention relates to an automatic bonding apparatus that automatically bonds a plurality of device chips on a plurality of electrode pads provided on a substrate surface.
  • a substrate module in which a component (a so-called device chip) in which a resistor, a capacitor, a reactance, a switching circuit and the like are incorporated on a wiring board is used in various applications.
  • FIG. 10 is an example of a time chart in the prior art, and shows a time chart in a form in which a plurality of device chips are temporarily bonded to a substrate one by one and then collectively bonded together.
  • a mode in which a substrate to be bonded to a device chip is received from an upstream process, device chips C1 to C4 are bonded to four on the substrate, and a chip-bonded substrate is transferred to a downstream process is shown. ing.
  • chip bonding is performed as follows. First, the substrate to be bonded to the chip is supplied into the apparatus at the substrate receiving position and moved to the chip transfer position. During this time, the device chip C1 is picked up and aligned using a chip mounter or the like. Then, the device chip C1 is temporarily bonded to a predetermined position on the substrate to be chip bonded. The same operation is performed for the other device chips C2 to C4. When all the chips C1 to C4 are temporarily joined, the substrate on which the device chips are temporarily joined is moved below the head portion. Then, heating is performed while the head portion is lowered and brought into close contact with the device chips C1 to C4, thereby performing the main bonding.
  • the head portion When the heating time necessary for the main bonding elapses, the head portion is raised and separated from the substrate, the substrate mounting table is moved to the delivery position, and the substrate to which the device chip is bonded is discharged. Then, the substrate mounting table is moved to the substrate receiving position, and the next substrate is supplied into the apparatus. Then, the substrate is moved to a chip mounting position and stopped, and the device chip C1 that has been aligned with the pickup is temporarily bonded to the substrate. Thereafter, the above operation is repeated.
  • the time for temporarily bonding the device chips one by one becomes a waiting time as a whole, and there is a problem that the cycle time increases as the number of device chips increases. . Moreover, even if the next device chip C1 is picked up and aligned as shown by the broken line during the main joining operation, the next substrate is kept stationary at the chip mounting position. Since the device chip C1 cannot be temporarily bonded, it is difficult to shorten the cycle time.
  • a time Tc1 that is a sum of a time Tc1 required from the start of temporary bonding of the device chip C1 to the completion of bonding of the device chip C4 and a time Tc2 required from the completion of bonding of the device chip C4 to the start of temporary bonding of the next device chip C1. Is the cycle time of this method.
  • a first object of the present invention is to provide an automatic bonding apparatus that can perform bonding with a reduced cycle time even when the number of device chips to be bonded on a substrate constituting a substrate module increases. It is.
  • swell of about 10 to 100 ⁇ m on the surface of the substrate to which the device chip is to be bonded.
  • the conductive paste applied to join the electrode pad and the device chip is applied only in the minimum amount necessary to prevent short circuit between adjacent device chips and electrodes.
  • the bonding failure referred to here is when the contact area between the device chip and the conductive paste is less than the area that should be contacted, or when the conductive paste excessively protrudes during bonding and the adjacent device chip or electrode pad. It means a short circuit.
  • a second object of the present invention is to provide a bonding apparatus capable of preventing a bonding failure between each device chip and an electrode pad when bonding a plurality of device chips.
  • the first invention provides: A bonding apparatus for bonding a plurality of device chips on a plurality of electrode pads provided on a substrate surface, A substrate supply unit for supplying a bonding target substrate to be bonded to the plurality of device chips; A paste application unit that applies a bonding paste onto the electrode pads of the bonding target substrates; A substrate holding unit for holding a bonding target substrate coated with the bonding paste; A chip supply unit for supplying a plurality of device chips to be bonded in a state corresponding to the positions and intervals of the electrode pads on the bonding target substrate; A head unit for holding a plurality of device chips to be joined supplied from the chip supply unit at a time; A head lifting mechanism for moving the head part up and down in the vertical direction with respect to the substrate holding part; A head excitation unit for exciting the head unit in the vertical direction; A heater section for heating a bonding paste for bonding the plurality of electrode pads and each device chip; A substrate unloading unit that unloads the substrate to which the device
  • the head portion and the head lifting mechanism are connected through a spherical bearing.
  • the head pressing unit further includes a head pressing unit that presses the head unit toward the substrate holding unit.
  • a fourth invention is the first to third inventions, A coating paste height measuring unit that measures the height of the applied bonding paste in a state where the bonding paste is applied on the plurality of electrode pads provided on the substrate surface; An application paste height inspection unit for inspecting whether or not the application height of the bonding paste is within an appropriate range is provided.
  • a fifth invention is the fourth invention, A defective substrate discharge unit is provided for discharging the substrate determined to be defective by the paste height inspection unit.
  • a sixth invention is the first to fifth inventions, A coating paste height measuring unit for measuring the height of the applied bonding paste; A coating paste height history storage unit for storing a history of applied paste height; And a paste application amount feedback unit for determining a paste application amount to be applied next based on a history of the applied paste height.
  • a seventh invention is the invention according to any one of the first to sixth inventions, A bonding region observation unit for observing a region including at least a peripheral portion of each electrode pad to which the plurality of device chips are bonded; A paste state inspection unit that performs inspection by observing the state of the paste during or after bonding as to whether or not the plurality of device chips are normally bonded; And a defective substrate discharging unit that discharges a substrate that is determined to be a bonding failure by the paste state inspection unit.
  • An eighth invention is any one of the first to seventh inventions, A head height detecting unit for detecting the head height when the joining is completed; A head height tolerance registration section for registering the head height tolerance when the joining is completed; A joining head height quality determination unit for judging whether or not the head height at the time of completion of joining is within an allowable range is provided.
  • a defective substrate discharge unit that discharges a substrate determined to be defective by the head height quality determination unit during bonding.
  • a tenth aspect of the invention is any one of the first to ninth aspects of the invention, A second substrate holding unit for holding a temporarily bonded substrate that has not been bonded; A second head portion for applying an external force to the temporary bonded state substrate and the plurality of device chips; And a second heater section that reheats the bonding paste in a solidified state between the temporary bonded substrate and each device chip.
  • An eleventh aspect of the invention is any one of the first to tenth aspects of the invention, A substrate cooling unit for cooling the substrate to which the device chip is bonded is provided.
  • a bonding target substrate W (hereinafter simply referred to as a substrate W) to be bonded has four electrode pads P1 to P4 formed on the surface thereof, and a device chip on each of them.
  • An example of joining C1 to C4 is illustrated.
  • the substrate W includes a substrate W1 before the bonding paste is applied, a substrate W2 after the bonding paste is applied, and a substrate to which the chip device is bonded, depending on the state in the bonding process.
  • W3 Common referred to as W3.
  • Arrows V1, V2, V4, V6, and V7 indicate the flow of the substrate W (W1 to W3).
  • the three axes of the orthogonal coordinate system are X, Y, and Z
  • the XY plane is the horizontal plane
  • the Z direction is the vertical direction
  • the X direction represents the arrow direction on the right side and the opposite direction to the left side
  • the Y direction represents the arrow direction on the back side
  • the Z direction represents the arrow direction (gravity).
  • the upper direction is expressed as the upper side
  • the opposite direction is expressed as the lower side.
  • the rotation direction with the Z direction as the central axis is defined as the ⁇ direction.
  • FIG. 1 is a plan view showing the entirety of an example embodying the present invention.
  • FIG. 2 is a system configuration diagram showing an example of a form embodying the present invention.
  • the automatic bonding apparatus 1 according to the present invention includes a substrate supply unit WS, a paste application unit PP, a bonding unit BD, a chip supply unit CS, and a substrate discharge unit WE.
  • the automatic bonding apparatus 1 is provided with an overall control unit MC.
  • the overall control unit MC comprehensively controls the substrate supply unit WS, the paste application unit PP, the bonding unit BD, the chip supply unit CS, and the substrate discharge unit WE.
  • the overall control unit MC is configured to include a control controller and its execution program. More specifically, the control controller is configured to include a personal computer, a programmable controller, and the above-described units and devices for inputting / outputting data and control signals, and the substrate supply unit WS, paste application unit PP, Control signals and data are exchanged with each device of the bonding unit BD, the chip supply unit CS, and the substrate discharge unit WE, and each unit is controlled in an integrated manner individually or in cooperation with each unit.
  • the substrate supply unit WS supplies a substrate to be bonded to the plurality of device chips C1 to C4 (that is, the substrate W1 before the bonding paste is applied).
  • the substrate supply unit WS includes a transfer robot WS1 for supplying the automatic bonding apparatus 1 with the substrate W1 transported from the adjacent external device AN1 in the upstream process.
  • the transfer hand WS2 for transporting the substrate W1
  • the articulated arm WS3 for moving the transfer hand WS2 in the horizontal direction, and the orientation and height of the articulated arm WS3 are changed.
  • a rotary lifting mechanism WS4 is provided.
  • the transfer robot WS1 is connected to a control unit WS5 that controls the movement or rotation of the articulated arm WS3 and the rotary lifting mechanism WS4, and transfers the substrate W1 based on a control command from the control unit WS5. It has a configuration that can.
  • the control unit WS5 is connected to the overall control unit MC and is controlled based on a control command from the overall control unit MC.
  • the substrate supply unit WS is not limited to the transfer robot WS1 having such a multi-joint arm WS3, and may be configured to include a single-axis slider.
  • the substrate supply unit WS lifts and holds the substrate W transported by the belt conveyor of the external apparatus AN1 from the lower surface side upward by the transfer hand WS2, and the broken line Can be transferred to the substrate holding unit 2 that has been waiting at the substrate receiving position PO1.
  • the substrate transport unit WS is not limited to the form in which the substrate W1 is received from the external device AN1 as shown in the figure, but may be in the form of taking out from a cassette that houses a plurality of substrates W1.
  • the transfer hand WS2 of the substrate transport unit WS is not limited to a form in which the transfer hand WS2 is lifted and held upward from the lower surface side of the substrate W1 as described above, or a form in which the upper surface of the substrate W1 is vacuum-sucked, Any configuration that can transfer the substrate W1 in the vertical and horizontal directions, such as a configuration in which the side surface is held, may be used.
  • the paste application part PP applies the bonding paste CP onto the electrode pads P1 to P4 of the substrate W.
  • the paste application part PP is a paste for supplying the bonding paste PP to the upper surface side of the squeegee PP1 and the squeegee PP1 and the blade PP2 for screen-printing the bonding paste CP at a predetermined position on the upper surface of the substrate W. It is configured to include a supply unit PP4 and a blade moving mechanism PP5 that moves the blade PP2 at a predetermined speed in the direction of the arrow V3 or in the opposite direction to stop at a predetermined position.
  • the paste application part PP is arranged in the middle of the path for moving the substrate W1 from the substrate receiving position to the bonding position described later, and slightly above the substrate holding part 2.
  • the squeegee PP1 is provided with openings PP3 corresponding to the relative positions and intervals of the electrode pads P1 to P4 of the substrate W.
  • the opening PP3 is provided with many small holes called meshes so that the bonding paste CP can pass therethrough.
  • the paste application part PP is used for bonding to the upper surface side of the squeegee PP1 with the upper surface of the substrate W1 placed on the substrate holding unit 2 and the lower surface of the squeegee PP1 facing each other with a slight gap.
  • the paste CP is supplied and moved in the direction indicated by the arrow V3 while pressing the blade PP2 from the upper surface side of the squeegee PP1 toward the substrate W1 side.
  • the amount of the bonding paste CP supplied to the upper surface side of the squeegee PP1 and the moving speed of the blade PP2 are set in advance so that the bonding paste CP can be applied with a predetermined thickness.
  • the bonding paste supply unit and the blade moving mechanism are configured to control based on the values.
  • the paste supply unit PP4 and the blade moving mechanism PP5 are connected to the overall control unit MC, and are controlled based on a control command from the overall control unit MC.
  • the paste application part PP can apply the bonding paste CP with a predetermined thickness on the electrode pads P1 to P4 provided on the substrate surface.
  • Paste application part PP showed the structure which the upper surface of the board
  • the PP itself may be configured to move in the vertical direction, or may be configured such that a clearance is appropriately secured, or in some cases, the substrate W and the squeegee PP1 can be in close contact.
  • the paste application part PP is not limited to the screen printing form as described above, and it is also possible to adopt an application method such as a dispenser method, an ink jet method or a spray method according to the viscosity of the bonding paste CP.
  • the chip supply unit CS supplies a plurality of device chips C1 to C4 to be bonded onto the electrode pads P1 to P4 in a state corresponding to the positions and intervals of the electrode pads P1 to P4 provided on the substrate surface. It is.
  • the chip supply unit CS includes a chip tray holder TH, a chip mounter CM, a chip slider SL, and a chip supply base 71.
  • the chip tray T is a tray-shaped container having a recessed portion that is slightly larger than the outer dimensions of the device chip, and a plurality of recessed portions arranged in a matrix.
  • the chip tray holder TH is for fixing the chip tray T in a predetermined position while maintaining the chip tray T in a horizontal state. Specifically, as shown in the figure, the chip tray holder TH is configured by arranging L-shaped fixing brackets (so-called brackets) along two opposing corners of the chip tray T. it can. Note that the chip tray holder TH is mounted on the base member CS1 of the chip supply unit CS.
  • the chip mounter CM is for taking out the device chips C stored in the chip tray T one by one and transferring them to a predetermined position on the chip supply base 71.
  • the chip mounter CM can be configured using a three-axis orthogonal robot module attached on the base member CS1 of the chip supply unit CS.
  • the three-axis orthogonal robot module includes a pair of rails CM1 extending in the Y direction, a slider CM2 that moves on the rail CM1 at a predetermined speed and stops at a predetermined position, a connecting member CM3 attached to the slider CM2, and a connecting member A pair of rails CM4 attached on CM3 extending in the Z direction, a slider CM5 moving on rail CM4 at a predetermined speed and stationary at a predetermined position, a connecting member CM6 attached to slider CM5, and a connecting member CM6 It includes a pair of rails CM7 attached on the top and extending in the X direction, and a slider CM8 that moves on the rails CM7 at a predetermined speed and stops at a predetermined position.
  • a connecting member CM9 is attached to the slider CM8, and an alignment camera CM10 and a rotation mechanism CM11 are attached to the connecting member CM9. Further, a pickup unit CM12 is attached to the rotation mechanism
  • the pickup unit CM12 picks up the device chip C.
  • the pickup unit CM12 includes a suction holding unit that can suck and hold the upper surface of the device chip C, and a moving mechanism that moves the suction holding unit in the vertical direction.
  • the rotation mechanism CM11 rotates the device chip by a predetermined angle in the ⁇ direction with the vertical axis passing through the intersection of “+” indicated by reference numeral CM13 as the rotation center while holding the device chip horizontally. It can be stationary at that angle.
  • Alignment camera CM10 is for imaging the external shape of the device chip to be picked up and the position and orientation of the alignment mark, detecting the orientation in the chip tray, and aligning in a predetermined direction.
  • Each device such as the sliders CM2, CM4, CM8 and the rotation mechanism CM11 of the chip mounter CM is connected to the overall control unit MC, and is controlled based on a control command from the overall control unit MC.
  • the chip mounter CM picks up the device chip C accommodated in a state in which the directions are not uniform in the chip tray and performs a predetermined alignment process on the chip mounting table 71 while performing a predetermined alignment process. Transfer can be performed in the direction, position and interval.
  • the chip slider SL is slid to the bonding part BD side while keeping the relative positions and intervals of the plurality of device chips C1 to C4, and is stationary under the head part 3.
  • the chip slider SL includes a base material SL1 attached on the base member CS1 of the chip supply unit CS, a pair of rails SL2 attached on the base material SL1 and extending in the Y direction, and a rail SL2. And a slider SL3 that moves at a predetermined speed and stops at a predetermined position.
  • a chip supply base 71 is attached to the slider SL3 via a connecting member 70.
  • the slider SL3 is connected to the overall control unit MC, and is controlled based on a control command from the overall control unit MC. Therefore, the chip slider SL can move the chip supply base 71 to the head unit 3 side or the chip tray T side, and can stop at a predetermined position.
  • the connecting member 70 is configured such that the chip supply base 71 and the chip supply base 71 are located below the head part 3 without interfering with the constituent members of the chip holder SL and the slider of the substrate holding part 2. It is shaped to overhang from the slider SL3 to the head part 3 side.
  • the chip supply base 71 mounts a plurality of device chips C1 to C4.
  • the chip supply base 71 is made of a flat plate on the upper surface, and the upper surface is horizontally disposed, so that the transferred chips C1 to C4 are not slipped on the upper surface so as not to slide down or be displaced.
  • the chip supply base 71 is formed of a plate material having a flat upper surface, and a fine groove or hole is provided in a portion inside the outer shape of the chips C1 to C4 to be transferred on the upper surface.
  • a configuration may be adopted in which the transferred chips C1 to C4 are not slipped down or displaced by placing the hole in a negative pressure state.
  • the chip supply unit CS preliminarily places the device chips C1 to C4 on the chip supply base 71 in a state corresponding to the positions and intervals of the electrode pads P1 to P4 on the substrate W. It can arrange
  • the bonding unit BD includes a substrate holding unit 2, a head unit 3, a head lifting mechanism 4, a head vibration unit 5, and a heater unit.
  • the substrate discharge unit WE carries out the substrate W3 to which the device chips C1 to C4 are bonded at the bonding unit BD from the substrate holding unit 2.
  • the substrate discharge unit WE includes a transfer robot WE1 for taking out the substrate W3 from the substrate holding unit 2 and carrying it out to the external device AN2 in the adjacent downstream process.
  • the transfer robot WE1 changes the orientation and height of the transfer hand WE2 for transporting the substrate W, the articulated arm WE3 for moving the transfer hand WE2 in the horizontal direction, and the articulated arm WE3.
  • a rotary lifting mechanism WE4 is provided.
  • the transfer robot WE1 is connected to a control unit WE5 that controls the movement or rotation of the articulated arm WE3 and the rotary lifting mechanism WE4, and transfers the substrate W3 based on a control command from the control unit WE5. It has a configuration that can.
  • the control unit WE5 is connected to the overall control unit MC and is controlled based on a control command from the overall control unit MC.
  • the substrate discharge unit WE is not limited to the transfer robot WE1 having such a multi-joint arm WE3, and may include a single-axis slider.
  • the substrate discharge unit WE lifts the substrate W3 to which the device chip is bonded upward from the lower surface side by the transfer hand WS2 at the substrate delivery position PO2 indicated by a broken line. It can be held and transferred to the external device AN2.
  • the substrate discharge unit WE is not limited to the form in which the substrate W3 is delivered to the external device AN2 as illustrated, but may be a form in which a cassette that can accommodate a plurality of substrates W3 is filled.
  • the transfer hand WE2 of the substrate discharge unit WE is not limited to the form in which the transfer hand WE2 is lifted upward from the lower surface side of the substrate W3 as described above, but the form in which the upper surface of the substrate W3 is vacuum-sucked, Any configuration that can transfer the substrate W3 in the vertical and horizontal directions, such as a configuration in which the side surface is held, may be used.
  • FIG. 3A is a front view showing a part of an example embodying the present invention, and shows a bonding part BD of the automatic bonding apparatus 1 according to the present invention. Below, the specific structure of the bonding part BD is demonstrated.
  • the substrate holding unit 2 holds the substrate W to be bonded to the device chip.
  • the substrate holding unit 2 includes a substrate mounting table 20 having a horizontal upper surface, and a negative pressure suction unit, a gripping unit, or the like is provided on a portion of the substrate mounting table 20 on which the substrate W is mounted.
  • the negative pressure suction unit is configured to include a groove or hole provided on the upper surface of the substrate mounting table 20W, a negative pressure generating means such as a vacuum pump, and a communication port for communicating them.
  • a switching valve such as a three-way valve is disposed in the communication port so that the groove and the hole can be switched to a negative pressure state or an atmospheric release state.
  • the substrate holding unit 2 has a pair of rails 25 extending in the X direction on the base member 10 of the bonding unit BD, and is mounted on an X-axis slider 26 that moves on the rails 25 in the X direction.
  • An axis slider mechanism is provided.
  • the X-axis slider 26 is connected to the overall control unit MC, and can move at a predetermined speed in a predetermined direction and stop at a predetermined position based on a control signal from the overall control unit MC.
  • this X-axis slider drive mechanism can be exemplified by a mechanism in which the X-axis slider 26 is driven by a rotary motor and a ball screw, a drive by a linear motor, and a drive by an air cylinder or a hydraulic cylinder.
  • the automatic bonding apparatus 1 of the form shown in FIG. 1 it is configured to be able to move to the substrate receiving position, below the paste application part PP, below the head part 3, and to the substrate delivery position.
  • the state in which the substrate W2 in a state where the bonding paste CP is applied on the electrode pad of the substrate is mounted on the substrate mounting table 20 is shown.
  • the substrate holding unit 2 does not have a substrate holding force when the substrate W is placed or replaced, and the substrate holding force can be applied after the substrate W is placed. While the substrate W can be placed and replaced smoothly, the substrate W can be securely held.
  • the head unit 3 holds a plurality of device chip chips C1 to C4 to be bonded on the substrate W at a time.
  • the head unit 3 includes a chip holding unit 31 and a heater unit 32.
  • the chip holding unit 31 holds a plurality of device chip chips C1 to C4.
  • the chip holding unit 31 picks up the device chips C1 to C4 and applies a holding force until they are bonded to the substrate W, and does not apply a holding force until the next device chip is picked up after raising the head after bonding.
  • the chip holding part 31 is provided with a groove or a hole on the surface thereof and inside the outer shape of the device chips C1 to C4 to be picked up. These grooves and holes are connected to an external vacuum generation mechanism (not shown) via a switching valve (not shown) and the like so that they can be switched between a vacuum state and an atmospheric release state. By doing so, the chip holding unit 31 can appropriately hold and release the device chips C1 to C4 by suction.
  • the substrate mounting table 20 of the above-described substrate holding unit 2 the chip mounting table 71 of the chip supply unit CS, and the chip holding unit 31 of the head unit 3 are adjusted in advance so as to be parallel to each other.
  • the heater unit 32 heats the bonding paste CP for bonding the electrode pads P1 to P4 and the device chips C1 to C4.
  • the heater unit 32 can be configured using a ceramic heater, a sheathed heater, or the like, and heating ON / OF can be switched or the heating temperature can be set by voltage or voltage control from the overall control unit MC. Keep it like that.
  • the heater unit 32 provided in the head unit 3 can heat the bonding paste CP via the plurality of device chip chips C1 to C4.
  • FIG. 4 is a schematic diagram showing a main part of an example of a form embodying the present invention. 4 shows the substrate mounting table 20 of the substrate holding unit 2, the chip holding unit 31 and the heater unit 32 of the head unit 3, and the device chips C1 to C4 held by the lower surface of the chip holding unit 31. . Further, a substrate W to be handled as a bonding target in the automatic bonding apparatus 1 according to the present invention is mounted on the substrate mounting table 20.
  • the substrate W handled as a bonding target in the automatic bonding apparatus 1 according to the present invention is preliminarily coated with an appropriate amount of bonding paste CP on the electrode pads P1 to P4 formed on the surface thereof. Further, the bonding paste CP is applied with a predetermined thickness (that is, a necessary amount) inside the outer shape of the electrode pads P1 to P4 by, for example, screen printing in consideration of the pressure at the time of bonding.
  • the head elevating mechanism 4 moves the head unit 3 up and down with respect to the substrate holding unit 2 and the chip supply unit CS.
  • the head unit 3 is attached to a Z-axis slider 43 that is a movable member of the head lifting mechanism 4.
  • FIG. 3B is a schematic diagram showing an entire example of a form embodying the present invention.
  • 3A shows a state in which the Z-axis slider 43 and the head unit 3 of the head lifting mechanism 4 are raised
  • FIG. 3B shows a state in which the Z-axis slider 43 and the head unit 3 are lowered.
  • the head lifting mechanism 4 includes a base plate 41, a pair of rails 42 arranged on the base plate 41 and extending in the Z direction, and a Z-axis slider 46 that moves on the rails 42 in the Z direction.
  • a rotation motor 45 is attached to the Z-axis slider 43 via a ball screw 44.
  • the rotation motor 45 can rotate at a predetermined rotation speed in a predetermined direction and can stop at a predetermined angle based on a control signal from the overall control unit MC. Therefore, based on signal control from the overall control unit MC, the Z-axis slider 43 can be moved at a predetermined speed in a predetermined direction and can be stopped at a predetermined location.
  • the head portion 3 is attached to the Z-axis slider 43 through connecting members 33, 34, and 35 as appropriate. Therefore, the head unit 3 can be moved up and down in the vertical direction based on a control signal from the overall control unit MC, and can be stationary at a predetermined position.
  • the head elevating mechanism 4 is not limited to the form using the rotary motor as described above, and the Z-axis slider 43 may be moved up and down using an air cylinder or a hydraulic cylinder.
  • the head elevating mechanism 4 may be fixedly attached to the apparatus frame 10 via the base plate 41 or the connecting member 11 if it is not necessary to move the head unit 3 in the horizontal direction.
  • the above-described chip supply unit CS includes a mechanism for moving the chip mounting table 71 to a position below the head unit 3 and waiting in that state while maintaining a state in which the chip supply unit CS does not physically interfere with the substrate holding unit 2. The configuration is left as it is.
  • the head lifting mechanism 4 is preferably configured to be movable in the X direction as shown in FIGS.
  • a pair of rails 15 extending in the X direction are arranged on the connecting member 11, the X axis slider 16 moving in the X direction on the rail 15 is provided, and the base plate 41 is attached to the X axis slider 16.
  • An X-axis slider drive mechanism is provided that moves the X-axis slider 16 at a predetermined speed and stops it at a predetermined location based on a control signal from the overall control unit MC.
  • examples of the X-axis slider drive mechanism include those in which the X-axis slider 16 is driven by a rotary motor and a ball screw, those that are driven by a linear motor, and those that are driven by an air cylinder or a hydraulic cylinder. By doing so, it is possible to individually set a place where the head unit 3 picks up the device chips C1 to C4 and a place where the chip devices C1 to C4 are bonded to the substrate W.
  • the head vibration unit 5 vibrates the head unit 3 in the vertical direction.
  • the head excitation unit 5 can be exemplified by a high-frequency vibration generator 51 or the like, and is attached to the connecting member 35 to which the head unit 3 is attached via the connecting members 33 and 34.
  • the high frequency vibration generator 51 appropriately vibrates with a predetermined amplitude and frequency based on a control signal from the overall control unit MC. More specifically, the high-frequency vibration generator 51 includes a rotary motor therein, and the eccentric weight attached to the rotary motor rotates to generate vibration in the direction indicated by the arrow 52. . Alternatively, the high-frequency vibration generator 51 may generate a vibration in the direction indicated by the arrow 52 when a vibrator having a predetermined weight reciprocates.
  • the bonding paste CP used for bonding the device chip has a high viscosity, so that it is difficult to spread it even by simple press. That is, it is difficult to spread the bonding paste CP thinly while keeping the thickness of the bonding paste CP uniform at the central portion and the peripheral portion of the region where the bonding paste CP is applied. Therefore, the bonding paste is further applied by applying vibration after bringing the device chips C1 to C4 before bonding into contact with the bonding paste CP applied on the electrode pads P1 to P4. The distance between the device chips C1 to C4 and the electrode pads P1 to P4 can be reduced while pushing the CP uniformly and thinly. Therefore, it can be said that the automatic bonding apparatus 1 according to the present invention is a suitable form for bonding a plurality of device chips to the substrate W coated with the high-viscosity bonding paste CP.
  • FIG. 5 is a cross-sectional view showing a main part of an example embodying the present invention.
  • the substrate mounting table 20 of the substrate holding unit 2, the substrate lifting / lowering mechanism 28 incorporated therein, and the substrate mounting A position detector 24 is shown.
  • At least the outer peripheral portions of the plurality of device chips to be bonded and the portions corresponding to the outside of the supporting members that support the substrate W are made of a transparent body.
  • the substrate mounting table 20 includes a support member 21, a frame member 22, and a suction portion 23.
  • the support member 21 touches the substrate W and directly supports the substrate W.
  • the support member 21 includes a protective plate 21a, a heater portion 21b, a reinforcing plate 21c, and a heat insulating portion 21g.
  • the protective plate 21a is in direct contact with the substrate W and transmits heat energy generated by the heater 21b to the substrate W. Moreover, the heater part 21b and the board
  • the heater unit 21b is for heating the substrate W.
  • the reinforcing plate 21 c is for preventing the heat energy generated by the heater portion 21 b from escaping to the frame member 22 while ensuring the strength of the support member 21.
  • the heat insulating portion 21g is for preventing the heat energy generated by the heater portion 21b from escaping to the frame member 22.
  • the protective plate 21a and the reinforcing plate 21c are made of glass plates.
  • the heater unit 21b includes a glass plate and a transparent electrode such as ITO or IZO formed on the surface thereof.
  • the heater unit 21b generates heat due to the internal resistance of the transparent electrode by applying current and voltage to the transparent electrode.
  • the voltage and voltage applied to the transparent electrode are controlled by a heater control unit 21k connected to the heater unit 21b, so that heating ON / OF for the heater unit 21b can be switched and the heating temperature can be set.
  • the heater control unit 21k is controlled based on a control signal from the overall control unit MC.
  • the heat insulating portion 21g is made of a material having both heat resistance and heat insulating properties such as silica and alumina, and is arranged between the outer edge portion of the heater portion 21b and the frame member 22 with a predetermined width and thickness. Therefore, the outer edge part of the heater part 21b does not touch the frame member 22 directly.
  • the heater unit 21b can heat the bonding paste CP through the protective plate 21a, the substrate W, and the plurality of electrode pads P1 to P4.
  • the support member 21 may be formed of a single-layer glass plate when the heater portion is not incorporated.
  • the frame member 22 supports the support member 21.
  • the frame member 21b is configured by a box or a frame-like housing having an opening on the upper surface.
  • the suction unit 23 is a communication port for sucking the substrate W.
  • the adsorbing portion 23 is configured to penetrate the support member 21 and the frame member 22 in a portion inside the outer peripheral portion of the substrate W to be placed and communicate with the outside. More specifically, the adsorbing unit 23 is connected to an external vacuum generation mechanism (not shown) via a switching valve (not shown) or the like so that it can be switched between a vacuum state and an atmospheric release state.
  • the protective plate 21a may be provided with a groove having a predetermined pattern so that the substrate W can be efficiently suctioned ON / OFF.
  • Each member constituting the support member 21 is provided with an opening portion 21h having a position and a size enough to allow a later-described lift pin 28a to pass and reciprocate.
  • the substrate placement position detection unit 24 detects where the substrate W1 is placed on the substrate holding unit 2.
  • the substrate placement position detection unit 24 is configured by combining an area sensor camera 24C having an image sensor with a CCD or CMOS and an imaging lens 24L. And it is comprised so that the position of the outer edge and corner
  • the substrate placement position detection unit 24 is not limited to the form incorporated in the substrate holding unit 2, and the area sensor camera 24C is disposed above the substrate reception position PO1, the imaging lens 24L faces downward, and the substrate W1.
  • the form which looks down on the upper surface of may be sufficient. In this case, after the substrate W1 is placed and held on the substrate holding unit 2, the position of the substrate W1 or the alignment mark added to the substrate W1 is observed at one time or divided into a plurality of times to detect the position. Keep it as
  • the substrate observation unit 24 is not limited to the form using the area sensor camera 24C and the imaging lens 24L described above, and a configuration using a device capable of detecting the position of the outer side or corner of the substrate W1, such as a laser displacement meter. It may be.
  • the position information of the substrate W1 detected by the substrate mounting position detection unit 24 is calculated as a deviation amount from a preset reference position (so-called alignment calculation), and the bonding paste CP applied on the substrate W1. Is fed back to the application position and the bonding position of the device chip to be bonded.
  • the substrate lifting mechanism 28 is for smoothly receiving the substrate W1 from the substrate supply unit WS.
  • the substrate lifting mechanism 28 includes a lift pin 28a, a connecting member 28b, and a lifting unit 28c.
  • the lift pins 28a support the substrate W1.
  • the connecting member 28b connects the lift pin 28a and the movable part 28d of the elevating unit 28c.
  • the elevating unit 28c moves the movable portion 28d, to which the lift pin 28a and the connecting member 28b are attached, up and down (z direction), and is attached to the frame member 22.
  • the substrate lifting mechanism 28 moves the movable portion 28d to the rising end to receive the substrate W1, and moves the movable portion 28d to the falling end to place the substrate W1 on the support member 21. Can be placed.
  • the material used for the support member 21 is not limited to a glass plate, and may be any material that transmits the wavelength of light for position detection of the substrate placement position detection unit 24. That is, if the observation light is visible light, a narrowly defined transparent body such as an acrylic resin, a PET resin, or a polycarbonate resin can be selected. On the other hand, if the observation light is near infrared, a transparent material in a broad sense such as a ceramic material through which the near infrared passes can be selected.
  • FIG. 6 is a time chart in an example of an embodiment embodying the present invention, and shows a series of operations of each part constituting the automatic bonding apparatus 1 in time series.
  • the substrate supply unit WS receives a substrate from the upstream process AN1 in advance, and places the substrate W1 on the substrate mounting table 20 of the substrate holding unit 2 at the substrate receiving position PO1 (ie, substrate supply). Then, the substrate W 20 is sucked and held by the substrate mounting table 20, the position alignment of the substrate W1 is performed, and the substrate W1 is moved below the paste application part PP to be stationary. Then, the bonding paste CP is applied to a predetermined position of the substrate W1.
  • the chip supply unit CS picks up the device chips from the tray T, aligns them, and places the device chips C1 to C4 one by one at a predetermined position of the chip mounting table 71 on the chip slider SL.
  • the slider SL3 is moved to the head part 3 side, the head part 3 is lowered, and the device chips C1 to C4 are sucked and held by the head part 3. . Thereafter, the head unit 3 is raised, and the slider SL3 is moved to the tray side. Thereafter, the substrate W ⁇ b> 2 coated with the bonding paste is moved below the head unit 3 to be stopped, and the head unit 3 is lowered. Then, the device chips C1 to C4 held by the head unit 3 and the bonding paste CP of the substrate W2 are brought into contact with each other, while heating the heater unit and operating the head vibration unit 5, the head unit 3 is connected to the device chip C1. ...
  • the head unit 3 releases the suction of the chip, the head unit 3 moves up, and is separated from the substrate W3 to which the device chips C1 to C4 are bonded. Then, the substrate mounting table 20 is moved to the substrate delivery position PO2, the substrate discharge unit WE takes out the substrate W3 from the substrate mounting table 20, and discharges the substrate W3 to the downstream process AN2. The substrate mounting table 20 moves again to the substrate receiving position PO1, and the next substrate W1 is mounted in the same manner as described above, and a series of operations after applying the bonding paste is repeated.
  • the chip supply unit CS picks up and aligns the next device chip C1, and when the slider SL3 moves to the tray side and stops, the next device chip C1 is placed at a predetermined position on the chip mounting table 71 as described above. Then, a series of operations of placing the other device chips C2 to C4 is repeated.
  • the head unit 3 when the head unit 3 is lowered and stopped, it is determined whether or not the device chips C1 to C4 are in contact with the bonding paste CP applied on the electrode pads P1 to P4 of the substrate W.
  • This contact determination is made based on the increase in the current value of the rotary motor, the position of the Z-axis slider or a decrease in the position change amount, or the pressure sensor previously incorporated in the substrate holding unit 2 or the head unit 3. It is possible to make a judgment based on the signal output.
  • a sensor for detecting a gap between the lower surfaces of the device chips C1 to C4 and the upper surface of the bonding paste CP may be arranged below the head unit 3 to detect the absence of the gap.
  • the head vibration unit 5 When it is determined that the device chips C1 to C4 are in contact with the bonding paste CP applied on the electrode pads P1 to P4 of the substrate W, the head vibration unit 5 is operated to apply the bonding paste CP. Spread thinly evenly. It should be noted that the operation of the head vibration unit 5 and the operation timing of the heater unit are appropriately set to ON / OFF timing in accordance with the joining target.
  • the cycle time of the automatic bonding apparatus 1 according to the present invention can be expressed as follows. That is, the time Te1 from the state where the chip slider is on the tray side to the head side and returning again to the tray side, from the start of transfer of the device chip C1 to the chip mounting table 71 until the transfer of the device chip C4 is completed.
  • the time Te2 is set, the total time Te of these times Te1 and Te2 is the cycle time.
  • the time Te3 until the movement to the head unit 3 can be started is also the cycle time.
  • the time Te is increased / decreased depending on the number of device chips to be mounted, and the time Te3 is increased / decreased depending on the bonding conditions in the bonding part BD, the moving distance and moving speed of the substrate mounting table 20, and therefore the cycle of the entire automatic bonding apparatus 1
  • the time is the later of the times Te and Te3.
  • the operation of arranging the device chips on the chip slider and the operation of simultaneously bonding a plurality of chips can be performed in parallel.
  • the cycle time required for joining can be shortened.
  • the conductive paste CP is uniform. Joining is performed in a spread state. Therefore, when bonding a plurality of chips simultaneously, it is possible to prevent a bonding failure between the plurality of device chips and the electrode pads. Therefore, good products can be produced efficiently.
  • the bonding portion BD is not limited to the configuration including the head elevating mechanism 4 and the head vibration portion 5 as described above with reference to FIGS. 3A and 3B, but as shown in FIGS. 7A and 7B.
  • the bonding unit BD2 may include a head lifting mechanism 4a and a head vibration unit 5a.
  • FIG. 7A and 7B are schematic views showing the whole of another example of a form embodying the present invention.
  • 7A shows a state in which the head unit 3 is raised
  • FIG. 7B shows a state in which the head unit 3 is lowered.
  • the bonding unit BD2 includes a substrate holding unit 2 and a head unit 3 configured in common with the bonding unit BD, and includes a head lifting unit 4a configured differently.
  • the head elevating mechanism 4 a moves the head unit 3 up and down with respect to the substrate holding unit 2.
  • the connecting member 36 of the head unit 3 is attached to a shaft 47 which is a movable side member of the head lifting mechanism 4a via a spherical bearing S.
  • the head elevating mechanism 4a is constituted by a linear cylinder unit 40a attached to the base plate 41.
  • the linear cylinder unit 40a includes a housing 46, a shaft 47, and pressurized fluid supply ports 46a and 46b for taking the shaft 47 in and out.
  • the casing 46 is hollow and sealed inside, and a valve plate 48 connected to the shaft 47 is provided in the casing 46 due to a pressure difference between the fluids supplied to the pressurized fluid supply ports 46a and 46b. Is configured to reciprocate.
  • the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a is smaller than the pressure f1b on the pressurized fluid supply port 46b side (for example, the pressurized fluid supply port 46a side is connected to the atmosphere). If released and the compressed air is supplied to the pressurized fluid supply port 46b), the shaft 47 and the head portion 3 are raised as shown in FIG. 7A.
  • the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a becomes larger than the pressure f1b on the pressurized fluid supply port 46b side (for example, compressed air is supplied to the pressurized fluid supply port 46a side). If the pressurized fluid supply port 46b side is released to the atmosphere), the shaft 47 and the head part 3 are lowered to the substrate holding part 2 side as shown in FIG. 7B.
  • the base plate 41 is provided with an elevating guide part 49 so that the vertical movement of the head part 3 is smoothed and no shaking occurs in the horizontal direction.
  • the raising / lowering guide part 49 is comprised including the shaft 49s and the linear bush 49b.
  • the head vibration unit 5a is configured to vibrate the head unit 3 in the vertical direction by repeating the lifting and lowering operation of the head lifting mechanism 4a with the head unit 3 lowered to the substrate holding unit 2 side.
  • the head vibration unit 5a can be realized by switching the reciprocating operation of the linear cylinder unit 40a of the head lifting mechanism 4a at high speed.
  • the head portion 3 and the head lifting / lowering portion 4a are connected via the spherical bearing S. That is, when a knuckle joint or the like is used instead of the spherical bearing S, a gap for smooth rotation operation is provided between the rotating portion and the fixed portion of the knuckle joint.
  • the excitation force generated in the portion 4a is interrupted or attenuated, and the excitation force cannot be efficiently transmitted to the head portion 3.
  • the spherical bearing S has no vertical gap, so that the excitation force generated by the head excitation unit 5a is efficiently used. It can be transmitted to the head part 3 well. That is, if the configuration using the spherical bearing S is used, the bonding paste CP can be quickly spread and the cycle time can be further shortened.
  • the bonding part BD2 may further include a head pressurizing part 6.
  • the head pressurization unit 6 further pressurizes the head unit 3 toward the substrate holding unit 2 side.
  • the head pressure unit 6 can be configured as shown in FIGS. 7A and 7B. That is, the head pressurizing unit 6 further moves the shaft 49a, which is a movable member for moving the head unit 3 in the vertical direction, to the substrate holding unit 2 side via the connecting member 33 attached to the head unit 3. It has a structure with a pressing mechanism.
  • the head pressure unit 6 includes a linear cylinder unit 60 and a pressing member 65.
  • the linear cylinder unit 60 includes a housing 61, a shaft 62, and pressurized fluid supply ports 61a and 61b for taking the shaft 62 in and out.
  • the casing 61 is hollow with its inside sealed, and a valve plate 63 connected to the shaft 62 is formed in the casing 61 by the pressure difference between the fluids supplied to the pressurized fluid supply ports 61a and 61b. Is configured to reciprocate.
  • the holding member 65 has a linear shape or a substantially L shape (including a substantially V shape), and is attached to the connecting member 11 of the apparatus frame 10 via a knuckle joint 66.
  • the pressing member 65 is configured such that the tip portion 68 rotates in the vertical direction around the shaft portion of the knuckle joint 66 as the shaft 62 reciprocates.
  • the pressure f2a on the pressurized fluid supply port 61a side of the linear cylinder unit 60 becomes larger than the pressure f2b on the pressurized fluid supply port 61b side (for example, compressed to the pressurized fluid supply port 61a side).
  • the shaft 62 is lowered in the direction indicated by the arrow 62v, and the tip portion 68 of the pressing member 65 is It will be in the state raised to the direction shown to 68v. In this state, the distal end portion 68 is separated from the connecting member 36 connected to the head 3, and the pressing force that presses the head portion 3 against the substrate holding portion 2 side does not act.
  • the pressure f2a on the pressurized fluid supply port 61a side of the direct acting cylinder unit 60 is smaller than the pressure f2b on the pressurized fluid supply port 62b side (for example, the pressurized fluid supply port 61a side is released to the atmosphere, 7B, the shaft 62 rises in the direction indicated by the arrow 62v, and the distal end portion 68 of the pressing member 65 is indicated by the arrow 68v. It will be in a state of descending in the direction. In this state, the distal end portion 68 presses the connecting member 36 connected to the head 3, and a pressing force that presses the head portion 3 against the substrate holding portion 2 side acts.
  • the bonding apparatus including the head pressurizing unit 6 has the device chip after the bonding paste CP is pushed and expanded by the head lifting / lowering operation and the head vibrating unit.
  • the distance between C1 to C4 and the electrode pads P1 to P4 can be maintained.
  • the device chips C1 to C4 can be further pushed into the substrate W side to slightly close the distance from the electrode pads P1 to P4.
  • cycle time can be further shortened. it can.
  • the head pressure unit 6 uses the point where the tip 68 of the pressing member 65 contacts the connecting member 36 as an action point of the pressing force, and the head part 3 is placed on the substrate holding part at the action point on the connecting member 36.
  • the structure is such that the force pressing toward 2 works. For this reason, even if the force for pushing the head unit 3 by the head pressurizing unit 3 is set large, the pressure can be applied without depending on the vertical movement of the head elevating unit 4. By doing so, it is possible to prevent extra stress from being applied to the X-axis slider 15 and the linear motion guide portion of the head elevating mechanism 4 as occurs when the pressure is applied only by the head elevating unit 4.
  • the device chips C1 to C4 are heated to bond the device chip and the electrode pad while maintaining the parallelism of the substrate holding unit 2 and the head unit 3, and the solvent of the bonding paste CP volatilizes to reduce the volume. Even in this case, the bonding can be completed in a state where the bonding paste CP is spread over the entire contact area.
  • the head unit 3 and the head elevating unit 4a are connected via the spherical bearing S. It leads to shortening.
  • the bonding apparatus may be configured to include a coating paste height measuring unit PH and a coating paste height inspection unit.
  • the applied paste height measuring unit PH measures the height of the applied bonding paste CP in a state where the bonding paste CP is applied on the plurality of electrode pads P1 to P4 provided on the surface of the substrate W. Measure.
  • the application paste height inspection unit inspects whether the application height of the applied bonding paste CP is within an appropriate range.
  • the coating paste height measuring unit PH is configured by using a device for measuring the unevenness, surface shape, and level difference of an object such as a laser displacement meter, and the bonding paste CP on the electrode pads P1 to P4.
  • the distance (that is, height) information from a certain reference surface can be acquired for the upper surface of the portion where the coating is applied, the portion where the bonding paste of the electrode pad portion is not applied, and other portions of the surface of the substrate W.
  • the coating paste height measurement unit PH moves from a position where the substrate holding unit 2 is below the paste coating unit PP to a position below the head unit 3 of the bonding unit BD. It is placed in the middle of the route.
  • the applied paste height measuring unit PH determines the applied bonding paste CP from the difference in relative distance information between the substrate surface and the upper surface of the portion where the bonding paste CP is applied on the electrode pads P1 to P4. Can be measured. Then, the coating thickness of the bonding paste CP measured by the coating paste height measuring unit PH and the determination result by the coating paste height inspection unit are output to the overall control unit MC.
  • the bonding apparatus including the coating paste height measuring unit PH and the coating paste height inspection unit measures the coating thickness of the bonding paste CP, and the head unit 3 uses the device chip.
  • the substrate determined to be defective is flowed to a downstream process or discharged as described later without bonding the device chip. By doing so, unnecessary joining operations can be omitted, and cycle time can be shortened.
  • the defective substrate discharge unit discharges the substrate that has been determined to be defective by the paste height inspection unit.
  • the defective substrate discharge unit has a function of discharging the defective substrate to the transfer robot WS1 of the substrate supply unit WS, and a cassette for storing the defective substrate is set as indicated by a broken line in FIG.
  • the configuration includes a defective substrate cassette unit WX1. And a board
  • the defective substrate discharge unit gives the transfer robot WE1 of the substrate discharge unit WE a function of discharging the defective substrate, and as shown by a broken line in FIG. 1, a defective substrate cassette in which a cassette for storing the defective substrate is set. It is good also as a structure provided with the part WX2.
  • the defective substrate discharge unit is a defective substrate cassette unit (not shown) in which a transfer robot (not shown) similar to the transfer robot WE1 constituting the substrate discharge unit WE and a cassette for storing defective substrates are set. ) May be separately arranged adjacent to the substrate receiving position PO1, the substrate delivery position PO2, and other positions suitable for discharging the substrate.
  • the defective substrate discharge unit performs an operation of discharging the defective substrate based on a control command from the overall control unit MC. By doing so, it is not necessary to discharge the defective substrate from the series of bonding processes at an early stage and transfer it to the downstream process, so that the cycle time can be further reduced.
  • the bonding apparatus according to the present invention may be a bonding apparatus having a configuration including a coating paste height measuring unit PH, a coating paste height history storage unit, and a paste coating amount feedback unit.
  • the coating paste height measuring unit measures the height of the applied bonding paste CP in a state where the bonding paste CP is applied on the plurality of electrode pads P1 to P4 provided on the surface of the substrate W. To do.
  • the application paste height history storage unit stores the application height history of the applied bonding paste CP. That is, the change with time of the application height of the bonding paste CP is stored.
  • the paste application amount feedback unit determines the paste application amount to be applied next based on the history of the applied paste height. That is, based on the change over time of the application height of the bonding paste CP, it is determined whether the application amount should be increased, reduced, or maintained, and the application amount of the paste to be applied next is determined.
  • the above-described bonding apparatus keeps the amount of paste to be applied within an appropriate range and prevents the occurrence of bonding failure due to inappropriate application thickness of the bonding paste CP. Can do. Therefore, in view of the number of discharged finished products with respect to the number of input substrates, the number of defective products decreases and the number of non-defective products increases. Therefore, good products can be produced efficiently.
  • the bonding apparatus may be a bonding apparatus having a configuration including a bonding region observation unit 8, a paste state inspection unit 9, and a defective substrate discharge unit.
  • the bonding region observation unit 8 is for observing a region including at least the peripheral portion of the device chips C1 to C4 bonded onto the electrode pads P1 to P4. Specifically, if the electrode pads P1 to P4 are transparent, the bonding region observation unit 8 observes so as to include a region inside the outer edge of the bonding paste CP, and the electrode pads P1 to P4 are made of metal or the like. In the case of a non-transparent material, observation is made so as to include at least a region outside the peripheral portion of the electrode pads P1 to P4 and inside the outer edge portion of the bonding paste CP that protrudes outward from the peripheral portion.
  • the bonding region observation unit 8 is configured by combining the area sensor camera 24C and the imaging lens 24L as shown in FIG. 5, and each electrode pad P1 to P4, its peripheral portion, and its The angle of view can be set so that the outer region can be observed at once.
  • the bonding region observation unit 8 is disposed to face the head unit 3 so as to sandwich the support member 21 of the substrate holding unit 2.
  • the area sensor camera 24C includes the electrode pads P1 to P4 of the substrate W disposed on the support member 21, the bonding paste CP applied thereon, and the device chips C1 to C1 that are in close contact therewith. Focusing around C4, it arranges so that these may be observed. Therefore, the area inside the angle of view represented by the alternate long and short dash line 83 can be observed using the area sensor camera 24C.
  • the paste state inspection unit 9 inspects whether the device chips C1 to C4 are normally joined by observing the paste state during or after joining.
  • the paste state inspection unit 9 inspects the state of the bonding paste CP in contact with the plurality of device chips C1 to C4 based on the image signal corresponding to the image observed by the bonding region observation unit 8. is there.
  • the state of the bonding paste CP refers to a protruding state or a curing reaction state of the bonding paste CP. That is, when the plurality of device chips C1 to C4 are bonded to the electrode pads P1 to P4 by pressing and heating, whether or not the bonding paste CP protrudes around the device chips C1 to C4, The protruding state of whether or not the pads P1 to P4 are protruding and the protruding dimension of the bonding paste CP is inspected. Alternatively, the state of discoloration of the bonding paste CP is examined, and the paste curing reaction state is checked to determine whether or not a predetermined bonding strength can be exhibited.
  • the paste state inspection unit 9 can be configured by an image processing device 91 and an image processing program incorporated therein.
  • the image processing apparatus 91 can be configured using a device called an image processing unit, an image processing board incorporated in a personal computer or a control device, and the acquired image information and an image processing program incorporated in advance. Based on the parameters and the like, a predetermined calculation process can be performed.
  • the image processing apparatus 91 includes an image signal acquisition unit 93.
  • the image signal acquisition unit 93 acquires the image signal output from the bonding region observation unit 8.
  • the image processing device 91 restores the image signal acquired by the image signal acquisition unit 93 and restores the image observed by the joint region observation unit 8. Furthermore, the image processing apparatus 91 can perform various paste state inspections as described below based on an image processing program, parameters, and the like incorporated in advance.
  • the defective substrate discharge unit discharges a substrate that is determined as a bonding failure by the paste state inspection unit.
  • the defective substrate discharge unit that discharges the substrate determined to be defective by the paste state inspection unit is the same as the defective substrate discharge unit for discharging the substrate determined to be defective by the paste height inspection unit described above. And can be used in combination or in combination.
  • the paste state inspection unit 9 causes the image processing program incorporated in the image processing apparatus 91 to perform the following inspection.
  • FIG. 8 is an image view showing the main part of the embodiment embodying the present invention, and shows an image image in which the bonding area observation unit 8 looks up the substrate W from the lower surface side.
  • the paste state inspection unit 8 measures the protruding dimensions d1 to d8 of the bonding paste CP protruding from the electrode pad P1.
  • the protruding dimensions d1 to d8 mean dimensions protruding from the peripheral portions of the respective sides of the device chips C1 to C4.
  • there are a total of 8 locations for measuring the protruding dimensions for the corners and ridges but they may be further subdivided.
  • the protruding dimension of the bonding paste CP is measured in the same manner as described above.
  • the bonding paste CP that protrudes from the electrode pads P1 to P4 is previously associated with the color, the degree of shading, and the cured state, and an image observed during heat-curing is acquired and subjected to image processing. It is determined whether the curing has progressed, and the curing reaction state of the paste is inspected.
  • the substrate W is made of a transparent material and the electrode pads P1 to P4 are made of transparent electrodes, and the entire bonding paste CP is observed through the substrate W to inspect the curing reaction state.
  • FIG. 9 is a characteristic diagram showing the bonding strength and the observation luminance of the bonding paste used in the present invention, illustrating the change in the curing reaction state of the bonding paste CP and the corresponding change in the observation luminance. Yes.
  • FIG. 9 shows the heating time on the horizontal axis and the bonding strength and observation luminance of the bonding paste CP on the vertical axis.
  • the bonding paste CP exemplified here, the binder component volatilizes as the heating proceeds, and the bonding strength gradually increases as the metal particles are bonded to each other.
  • the bonding paste CP has an observation luminance of 60% when the bonding strength Ta is necessary for bonding the device chips, and further has an observation luminance of 80% when the bonding strength Tb is reached. If the heating is further continued, the strength is slightly increased. However, if the heating is excessive, the bonding strength is lowered.
  • the bonding strength of the bonding paste CP can be inspected in advance, and the bonding strength can be inspected by measuring the observation luminance. That is, the paste state inspection unit 9 can inspect the reaction state of the bonding paste CP.
  • the paste state inspection unit 9 is not limited to the above-described inspection items, and whether or not bubbles are generated or mixed during the pressurization / vibration / heating of the bonding paste CP. You may inspect.
  • the substrate W is a transparent body, and the electrode pads P1 to P4 are made of transparent electrodes.
  • the bonding apparatus includes a curing reaction state allowable range setting unit in the above-described inspection of the curing reaction state of the paste.
  • the curing reaction state of the bonding paste CP is the curing reaction state. It is good also as a structure which test
  • the curing reaction state allowable range setting unit sets the allowable range of the curing reaction state for the curing reaction state of the bonding paste CP.
  • the observation luminance of 60% to 80% corresponding to the bonding strengths Ta and Tb of the bonding paste CP is set as the allowable range of the curing reaction state.
  • the paste state inspection unit 9 notifies the outside if the inspection result is abnormal. Also good. In this case, the paste state inspection unit 9 measures the curing reaction state of the bonding paste CP for each of the electrode pads P1 to P4, and if at least one of them is outside the allowable range of the curing reaction state, Notify that the curing reaction state of the inspected bonding paste is abnormal.
  • the bonding paste CP of the electrode pads P1 to P4 Among these, if any observation luminance exceeds 80% or any observation luminance is less than 60%, the outside is notified that the reaction state of the bonding paste CP is abnormal.
  • This abnormality notification means notification due to a change in the signal level connected to the overall control unit MC, and visual / audible notification to the worker by a lamp, a buzzer, or the like.
  • the abnormality processing registered in advance in the overall control unit MC is automatically executed, the operator is informed that a bonding failure has occurred, or the downstream device has a bonding failure. Can be informed.
  • the bonding is stopped based on the inspection result of the paste reaction state in the paste state inspection unit 9, it is not necessary to continue the unnecessary heating operation after that, and the cycle time can be shortened. Further, by properly discharging the defective substrate, it is possible to prevent the occurrence of defective bonding and to produce a good product efficiently.
  • the bonding apparatus may be a bonding apparatus having a bonding head height detection unit, a bonding head height tolerance registration unit, and a bonding head height quality determination unit.
  • Head height detection unit at the time of joining detects the head height at the time of joining completion.
  • the joining head height detection unit is configured to detect the position of the head unit 3. More specifically, a linear encoder (that is, one that detects the amount of movement or position in the Z-axis direction) provided on either the connecting member of the head unit 3 or the Z-axis slider 43 of the head lifting mechanism 4, In addition to a rotary encoder (that is, one that detects a rotation angle and a rotation amount) provided in a rotary motor 45 for driving the shaft slider 43, a displacement sensor that detects a lower surface position of the chip holding unit 31 of the head unit 3 and the like Can be illustrated.
  • the bonding head height tolerance registration unit registers the tolerance range of the head height at the completion of joining.
  • the joining head height quality judgment unit judges whether or not the head height at the completion of joining is within an allowable range.
  • the joining head height allowable range registration unit and the joining head height pass / fail judgment unit are configured by the above-described image processing device 91 and its execution program.
  • the above bonding apparatus determines whether or not bonding has been performed under the bonding conditions defined in advance after bonding the device chip, and finds a substrate that may have a bonding failure. (That is, a failure determination). For this reason, the board determined to be defective can be added with the defect determination information to flow to a downstream process, or can be discharged as described later.
  • the defective substrate discharge unit discharges the substrate that has been determined to be defective by the bonding head height determination unit.
  • the defective substrate discharge unit for discharging the substrate determined to be defective by the bonding head height quality determination unit is a defective substrate discharge unit for discharging the substrate determined to be defective by the paste height inspection unit described above.
  • the configuration is the same as that described above, and the configuration can be combined or used together.
  • the bonding apparatus is preferably a bonding apparatus having a configuration further including a second substrate holding part, a second head part, and a second heater part.
  • the second substrate holding unit holds a temporary bonded state substrate that has not been bonded yet.
  • the second head portion applies an external force to the temporary bonded state substrate and the plurality of device chips.
  • the second heater unit reheats the bonding paste in a solidified state between the temporary bonded substrate and each device chip.
  • the above bonding apparatus divides the time until the bonding is completed while heating, but the lead time for processing one substrate becomes longer, but the unit time per unit time In view of the number of processed sheets, the cycle time can be shortened and a good product can be produced efficiently.
  • substrate immediately after joining by heating was shown.
  • the substrate may be disliked from being conveyed in a high temperature state.
  • the substrate holding unit 2 or the substrate discharging unit WE is waiting for the temperature to drop while holding the substrate, the next substrate cannot be processed and stays in the apparatus, resulting in an increase in cycle time. .
  • the bonding apparatus is preferably a bonding apparatus having a configuration further including a substrate cooling unit that cools the substrate W3 to which the device chip is bonded.
  • the substrate cooling unit is configured to contact a substrate W3 with a plate material made of a metal material such as copper, aluminum, duralumin, or iron, called a cooling plate.
  • a cooling plate having a size equal to or larger than or smaller than the outer dimension of the substrate W is prepared, the substrate discharge unit WE2 is used to move the substrate W3 toward the cooling plate, and the device chips C1 ⁇ The C4 side or the opposite side is brought into contact with the cooling plate.
  • the cooling plate is further provided with heat radiation fins, cooling air is sent to the heat radiation fins to cool the substrate (so-called air cooling method), and a flow path is provided inside the cooling plate, and the flow path is cooled.
  • air cooling method A configuration in which water is allowed to flow to cool the substrate (so-called water cooling method) may be employed.
  • the substrate cooling unit may be configured by a cooling fan that sends cold air toward the substrate W while the transfer robot WE1 of the substrate discharge unit WE holds the substrate W. Further, the substrate cooling unit may be arranged between the substrate discharge unit WE and the downstream apparatus AN2, cool the substrate W3 for a certain time, and then discharge it to the downstream apparatus AN using another substrate discharge unit. .
  • the above-described bonding apparatus places the substrate immediately after heating from the substrate holding unit 2 onto the substrate cooling unit, cools it to a temperature that can be received by the downstream device, and carries it out to the downstream device. can do. Therefore, the substrate delivered to the downstream apparatus does not stay in the apparatus, the cycle time can be shortened, and a good product can be produced efficiently.

Abstract

Provided is an automatic bonding apparatus capable of performing bonding without deteriorating throughput even if the number of device chips to be bonded on a substrate that constitutes a substrate module is increased, specifically, a bonding apparatus that bonds the device chips on a plurality of electrode pads that are provided on a surface of the substrate. The automatic bonding apparatus is provided with: a substrate supply section for supplying a substrate on which the device chips are to be bonded; a paste applying section that applies a bonding paste; a stage section for holding the substrate; a chip supply section for supplying the device chips; a head section for holding the device chips at one time; a head lift mechanism that lifts the head section in the vertical direction with respect to the stage section; a vibrating apparatus that vibrates the head section in the vertical direction; a heater section that heats the chip bonding paste for bonding the substrate and each of the device chips to each other; and a substrate carry-out section for carrying out the substrate having the device chips bonded thereon.

Description

自動ボンディング装置Automatic bonding equipment
　本発明は、基板表面に設けられた複数の電極パッド上に、複数のデバイスチップを自動的に接合する、自動ボンディング装置に関する。 The present invention relates to an automatic bonding apparatus that automatically bonds a plurality of device chips on a plurality of electrode pads provided on a substrate surface.
　従来より、配線基板上に抵抗器やコンデンサ、リアクタンス、スイッチング回路などが組み込まれた部品（いわゆる、デバイスチップ）が接合された基板モジュールが、種々の用途で用いられている。 Conventionally, a substrate module in which a component (a so-called device chip) in which a resistor, a capacitor, a reactance, a switching circuit and the like are incorporated on a wiring board is used in various applications.
　さらに近年はハイブリッド自動車や電気自動車の普及に伴い、パワートランジスタやパワーデバイスと呼ばれるデバイスチップが接合された基板モジュールが普及しており、接合方法について種々検討されている（例えば、特許文献１，２）。 Furthermore, in recent years, with the spread of hybrid vehicles and electric vehicles, substrate modules to which device chips called power transistors and power devices are joined are widely used, and various joining methods have been studied (for example, Patent Documents 1 and 2). ).
　また、基板モジュールを構成する基板上に複数のデバイスチップを接合するために、デバイスチップを１つずつ仮接合し、後に各チップを一括で本接合する形態が採用されている（例えば、特許文献３，４）。 Further, in order to join a plurality of device chips on a substrate constituting a substrate module, a mode is adopted in which device chips are temporarily joined one by one and then each chip is finally joined together (for example, Patent Documents). 3, 4).
特開２００６－５９９０４号公報JP 2006-59904 A 特開２０１３－４１８７０号公報JP 2013-41870 A 特開平６－１６３６３４号公報JP-A-6-163634 特開２００４－２７４０２６号公報JP 2004-274026 A
　図１０は、従来の技術におけるタイムチャートの一例であり、複数のデバイスチップを１つずつ基板上に仮接合させた後、一括で本接合させる形態におけるタイムチャートを示している。なお、ここでは、デバイスチップの接合対象となる基板を上流工程から受け取り、当該基板に４つにデバイスチップＣ１～Ｃ４を接合し、チップ接合済の基板を下流工程へ受け渡す形態の例を示している。 FIG. 10 is an example of a time chart in the prior art, and shows a time chart in a form in which a plurality of device chips are temporarily bonded to a substrate one by one and then collectively bonded together. Here, an example of a mode in which a substrate to be bonded to a device chip is received from an upstream process, device chips C1 to C4 are bonded to four on the substrate, and a chip-bonded substrate is transferred to a downstream process is shown. ing.
　具体的には、以下の様にして、チップ接合を行う。まず、チップ接合対象となる基板上を基板受取位置で装置内に供給し、チップ移載位置へ移動させる。この間にチップマウンタ等を用いて、デバイスチップＣ１をピックアップし、アライメントしておく。そして、チップ接合対象となる基板上の所定位置にデバイスチップＣ１を仮接合する。そして、他のデバイスチップＣ２～Ｃ４についても同様の動作を行い、すべてのチップＣ１～Ｃ４の仮接合が済めば、当該デバイスチップが仮接合された基板をヘッド部の下方へ移動させる。そして、ヘッド部を下降させてデバイスチップＣ１～Ｃ４に密着させつつ加熱を行い、本接合を行う。そして、本接合に必要な加熱時間が経過すれば、ヘッド部を上昇させて基板と離隔し、基板載置台を受渡位置へ移動し、デバイスチップが接合された基板を排出する。そして、基板載置台を基板受取位置へ移動し、次の基板を装置内に供給する。そして、当該基板をチップ載置位置へ移動して静止させ、ピックアップとアライメントが済んだデバイスチップＣ１を当該基板に仮接合する。以下、上述の動作が繰り返し行われる。 Specifically, chip bonding is performed as follows. First, the substrate to be bonded to the chip is supplied into the apparatus at the substrate receiving position and moved to the chip transfer position. During this time, the device chip C1 is picked up and aligned using a chip mounter or the like. Then, the device chip C1 is temporarily bonded to a predetermined position on the substrate to be chip bonded. The same operation is performed for the other device chips C2 to C4. When all the chips C1 to C4 are temporarily joined, the substrate on which the device chips are temporarily joined is moved below the head portion. Then, heating is performed while the head portion is lowered and brought into close contact with the device chips C1 to C4, thereby performing the main bonding. When the heating time necessary for the main bonding elapses, the head portion is raised and separated from the substrate, the substrate mounting table is moved to the delivery position, and the substrate to which the device chip is bonded is discharged. Then, the substrate mounting table is moved to the substrate receiving position, and the next substrate is supplied into the apparatus. Then, the substrate is moved to a chip mounting position and stopped, and the device chip C1 that has been aligned with the pickup is temporarily bonded to the substrate. Thereafter, the above operation is repeated.
　この方式によりデバイスチップＣ１～Ｃ４を接合すると、１つずつデバイスチップを仮接合させるための時間が全体としての待ち時間となり、デバイスチップの数が増えるほどサイクルタイムが伸てしまうという課題があった。しかも、本接合動作を行っている間に、破線で示す様に次のデバイスチップＣ１をピックアップし、アライメントを済ませたとしても、次の基板がチップ載置位置にて静止状態となるまで次のデバイスチップＣ１を仮接合することができないため、サイクルタイムを短縮することが困難であった。つまり、デバイスチップＣ１の仮接合開始からデバイスチップＣ４の接合完了までに要する時間Ｔｃ１と、デバイスチップＣ４の接合完了から次のデバイスチップＣ１の仮接合開始までに要する時間Ｔｃ２とを合算した時間Ｔｃが、この方式のサイクルタイムとなる。 When the device chips C1 to C4 are bonded by this method, the time for temporarily bonding the device chips one by one becomes a waiting time as a whole, and there is a problem that the cycle time increases as the number of device chips increases. . Moreover, even if the next device chip C1 is picked up and aligned as shown by the broken line during the main joining operation, the next substrate is kept stationary at the chip mounting position. Since the device chip C1 cannot be temporarily bonded, it is difficult to shorten the cycle time. That is, a time Tc1 that is a sum of a time Tc1 required from the start of temporary bonding of the device chip C1 to the completion of bonding of the device chip C4 and a time Tc2 required from the completion of bonding of the device chip C4 to the start of temporary bonding of the next device chip C1. Is the cycle time of this method.
　そこで、本発明の第１の目的は、基板モジュールを構成する基板上に接合させるデバイスチップの数が増えても、サイクルタイムを短縮させて接合を行うことができる、自動ボンディング装置を提供することである。 Accordingly, a first object of the present invention is to provide an automatic bonding apparatus that can perform bonding with a reduced cycle time even when the number of device chips to be bonded on a substrate constituting a substrate module increases. It is.
　また、デバイスチップの接合対象となる基板の表面には、１０～１００μｍ程度のうねりがある。そして、電極パッドとデバイスチップとを接合するために塗布される導電用ペーストは、隣接するデバイスチップや電極同士のショートを防ぐために、必要最小限の量しか塗布されない。 Also, there is a swell of about 10 to 100 μm on the surface of the substrate to which the device chip is to be bonded. The conductive paste applied to join the electrode pad and the device chip is applied only in the minimum amount necessary to prevent short circuit between adjacent device chips and electrodes.
　そのため、このような基板上に、複数のデバイスチップを接合しようとすると、それぞれの電極パッドとデバイスチップ間の間隔が、基板のうねりなどの影響により少しずつ異なるため、従来の技術では、導電ペーストとデバイスチップとの接触が不均一となり、結果的に接合不良を招くおそれがあるという課題があった。 For this reason, when a plurality of device chips are to be bonded on such a substrate, the distance between each electrode pad and the device chip is slightly different due to the influence of the swell of the substrate. There is a problem that contact between the device chip and the device chip becomes non-uniform, which may result in poor bonding.
　なお、ここで言う接合不良とは、デバイスチップと導電用ペーストの接触面積が、本来接触すべき面積に満たない場合や、接合時に導電用ペーストが過度にはみ出して隣接するデバイスチップや電極パッドとショートする状態を意味する。 Note that the bonding failure referred to here is when the contact area between the device chip and the conductive paste is less than the area that should be contacted, or when the conductive paste excessively protrudes during bonding and the adjacent device chip or electrode pad. It means a short circuit.
　そこで、本発明の第２の目的は、複数のデバイスチップを接合する際に、それぞれのデバイスチップと電極パッドとの接合不良を防ぐことができるボンディング装置を提供することである。 Therefore, a second object of the present invention is to provide a bonding apparatus capable of preventing a bonding failure between each device chip and an electrode pad when bonding a plurality of device chips.
　以上の課題を解決するために、第１の発明は、
　基板表面に設けられた複数の電極パッド上に、複数のデバイスチップを接合するボンディング装置であって、
　前記複数のデバイスチップの接合対象となる接合対象基板を供給する基板供給部と、
前記接合対象基板の電極パッド上に接合用ペーストを塗布するペースト塗布部と、
前記接合用ペーストが塗布された接合対象基板を保持する基板保持部と、
前記接合対象基板上の電極パッドの位置・間隔に対応させた状態で接合対象となる複数のデバイスチップを供給するチップ供給部と、
前記チップ供給部から供給される前記接合対象となる複数のデバイスチップを一度に保持するヘッド部と、
前記基板保持部に対して前記ヘッド部を上下方向に昇降移動させるヘッド昇降機構と、
前記ヘッド部を上下方向に加振するヘッド加振部と、
前記複数の電極パッドと各デバイスチップを接合する接合用ペーストを加熱するヒータ部と、
デバイスチップが接合された基板を前記基板保持部から搬出する基板搬出部とを備えた、
自動ボンディング装置である。 In order to solve the above problems, the first invention provides:
A bonding apparatus for bonding a plurality of device chips on a plurality of electrode pads provided on a substrate surface,
A substrate supply unit for supplying a bonding target substrate to be bonded to the plurality of device chips;
A paste application unit that applies a bonding paste onto the electrode pads of the bonding target substrates;
A substrate holding unit for holding a bonding target substrate coated with the bonding paste;
A chip supply unit for supplying a plurality of device chips to be bonded in a state corresponding to the positions and intervals of the electrode pads on the bonding target substrate;
A head unit for holding a plurality of device chips to be joined supplied from the chip supply unit at a time;
A head lifting mechanism for moving the head part up and down in the vertical direction with respect to the substrate holding part;
A head excitation unit for exciting the head unit in the vertical direction;
A heater section for heating a bonding paste for bonding the plurality of electrode pads and each device chip;
A substrate unloading unit that unloads the substrate to which the device chip is bonded from the substrate holding unit,
Automatic bonding equipment.
　第２の発明は、第１の発明において、
前記ヘッド部と前記ヘッド昇降機構とが、球面軸受を介して連結されていることを特徴とする。 According to a second invention, in the first invention,
The head portion and the head lifting mechanism are connected through a spherical bearing.
　第３の発明は、第１又は第２の発明において、
前記ヘッド部を前記基板保持部に向けてさらに押し付けるヘッド加圧部を備えたことを特徴とする。 According to a third invention, in the first or second invention,
The head pressing unit further includes a head pressing unit that presses the head unit toward the substrate holding unit.
　第４の発明は、第１～３の発明において、
前記基板表面に設けられた複数の電極パッド上に接合用ペーストが塗布された状態で当該塗布された接合用ペーストの高さを測定する塗布ペースト高さ測定部と、
前記接合用ペーストの塗布高さが適性範囲内かどうかを検査する塗布ペースト高さ検査部とを備えたことを特徴とする。 A fourth invention is the first to third inventions,
A coating paste height measuring unit that measures the height of the applied bonding paste in a state where the bonding paste is applied on the plurality of electrode pads provided on the substrate surface;
An application paste height inspection unit for inspecting whether or not the application height of the bonding paste is within an appropriate range is provided.
　第５の発明は、第４の発明において、
　ペースト高さ検査部で不良判定された基板を排出する不良基板排出部を備えたことを特徴とする。 A fifth invention is the fourth invention,
A defective substrate discharge unit is provided for discharging the substrate determined to be defective by the paste height inspection unit.
　第６の発明は、第１～５の発明において、
塗布された接合用ペーストの高さを測定する塗布ペースト高さ測定部と、
塗布されたペースト高さの履歴を記憶する塗布ペースト高さ履歴記憶部と、
塗布されたペースト高さの履歴に基づいて次に塗布するペースト塗布量を決定するペースト塗布量フィードバック部とを備えたことを特徴とする。 A sixth invention is the first to fifth inventions,
A coating paste height measuring unit for measuring the height of the applied bonding paste;
A coating paste height history storage unit for storing a history of applied paste height;
And a paste application amount feedback unit for determining a paste application amount to be applied next based on a history of the applied paste height.
　第７の発明は、第１～６の発明のいずれかにおいて、
前記複数のデバイスチップが接合される各電極パッドの周辺部を少なくとも含む領域を観察する接合領域観察部と、
当該複数のデバイスチップが正常に接合されたかどうかについて接合中若しくは接合後のペーストの状態を観察して検査を行うペースト状態検査部と、
ペースト状態検査部で接合不良と判定された基板を排出する不良基板排出部とを備えたことを特徴とする。 A seventh invention is the invention according to any one of the first to sixth inventions,
A bonding region observation unit for observing a region including at least a peripheral portion of each electrode pad to which the plurality of device chips are bonded;
A paste state inspection unit that performs inspection by observing the state of the paste during or after bonding as to whether or not the plurality of device chips are normally bonded;
And a defective substrate discharging unit that discharges a substrate that is determined to be a bonding failure by the paste state inspection unit.
　第８の発明は、第１～７の発明のいずれかにおいて、
接合完了時のヘッド高さを検出する接合時ヘッド高さ検出部と、
接合完了時のヘッド高さの許容範囲を登録する接合時ヘッド高さ許容範囲登録部と、
接合完了時のヘッド高さが許容範囲内かどうかを判定する接合時ヘッド高さ良否判定部とを備えたことを特徴とする。 An eighth invention is any one of the first to seventh inventions,
A head height detecting unit for detecting the head height when the joining is completed;
A head height tolerance registration section for registering the head height tolerance when the joining is completed;
A joining head height quality determination unit for judging whether or not the head height at the time of completion of joining is within an allowable range is provided.
　第９の発明は、第８の発明において、
接合時ヘッド高さ良否判定部で不良判定された基板を排出する不良基板排出部を備えたことを特徴とする。 In a ninth aspect based on the eighth aspect,
A defective substrate discharge unit is provided that discharges a substrate determined to be defective by the head height quality determination unit during bonding.
　第１０の発明は、第１～９の発明のいずれかにおいて、
接合が未完了の仮接合状態基板を保持する第２基板保持部と、
前記仮接合状態基板と複数のデバイスチップに対して外力を付与する第２ヘッド部と、
前記仮接合状態基板と各デバイスチップとの間にある固化途中状態の接合用ペーストを再加熱する第２ヒータ部とを備えたことを特徴とする。 A tenth aspect of the invention is any one of the first to ninth aspects of the invention,
A second substrate holding unit for holding a temporarily bonded substrate that has not been bonded;
A second head portion for applying an external force to the temporary bonded state substrate and the plurality of device chips;
And a second heater section that reheats the bonding paste in a solidified state between the temporary bonded substrate and each device chip.
　第１１の発明は、第１～１０の発明のいずれかにおいて、
デバイスチップが接合された基板を冷却する基板冷却部を備えたことを特徴とする。 An eleventh aspect of the invention is any one of the first to tenth aspects of the invention,
A substrate cooling unit for cooling the substrate to which the device chip is bonded is provided.
　基板モジュールを構成する基板上に接合させるデバイスチップの数が増えても、複数のデバイスチップを基板上の所定位置に同時に接合でき、サイクルタイムが短縮できる。さらに、複数チップを接合する際に、複数のデバイスチップと電極パッドとの接合不良を防ぐことができる。そのため、効率よく良品を生産することができる。 Even if the number of device chips to be bonded on the substrate constituting the substrate module increases, a plurality of device chips can be bonded simultaneously to predetermined positions on the substrate, and the cycle time can be shortened. Furthermore, when joining a some chip | tip, the joining defect of a some device chip | tip and an electrode pad can be prevented. Therefore, good products can be produced efficiently.
本発明を具現化する形態の一例の全体を示す平面図である。It is a top view which shows the whole example of the form which embodies this invention. 本発明を具現化する形態の一例を示すシステム構成図である。It is a system configuration figure showing an example of the form which embodies the present invention. 本発明を具現化する形態の一例の一部を示す正面図である。It is a front view which shows a part of example of the form which embodies this invention. 本発明を具現化する形態の一例の一部を示す正面図である。It is a front view which shows a part of example of the form which embodies this invention. 本発明を具現化する形態の一例の要部を示す斜視図である。It is a perspective view which shows the principal part of an example of the form which embodies this invention. 本発明を具現化する形態の一例の要部を示す断面図である。It is sectional drawing which shows the principal part of an example of the form which embodies this invention. 本発明を具現化する形態の一例におけるタイムチャートである。It is a time chart in an example of the form which embodies the present invention. 本発明を具現化する形態の別の一例の全体を示す側面図である。It is a side view which shows the whole of another example of the form which embodies this invention. 本発明を具現化する形態の別の一例の全体を示す側面図である。It is a side view which shows the whole of another example of the form which embodies this invention. 本発明を具現化する形態の一例の要部を示す画像図である。It is an image figure which shows the principal part of an example of the form which embodies this invention. 本発明に用いられる接合用ペーストの接合強度と観察輝度を示す特性図である。It is a characteristic view which shows the joint strength and observation brightness | luminance of the paste for joining used for this invention. 従来の技術におけるタイムチャートの一例である。It is an example of the time chart in a prior art.
　本発明を実施するための形態について、図を用いながら説明する。なお、説明を簡単に行うため、接合対象となる接合対象基板Ｗ（以下、単に基板Ｗという）には、その表面に４つの電極パッドＰ１～Ｐ４が形成されており、その上に各々デバイスチップＣ１～Ｃ４を接合する形態を例示する。なお、基板Ｗは、説明の便宜上、ボンディング工程内の状態に応じて、接合用ペーストが塗布される前の基板Ｗ１、接合用ペーストが塗布された後の基板Ｗ２、チップデバイスが接合された基板Ｗ３と呼ぶことがある。また、矢印Ｖ１，Ｖ２，Ｖ４，Ｖ６，Ｖ７は、基板Ｗ（Ｗ１～Ｗ３）の流れを示すものである。 DETAILED DESCRIPTION Embodiments for carrying out the present invention will be described with reference to the drawings. For simplicity of explanation, a bonding target substrate W (hereinafter simply referred to as a substrate W) to be bonded has four electrode pads P1 to P4 formed on the surface thereof, and a device chip on each of them. An example of joining C1 to C4 is illustrated. For convenience of explanation, the substrate W includes a substrate W1 before the bonding paste is applied, a substrate W2 after the bonding paste is applied, and a substrate to which the chip device is bonded, depending on the state in the bonding process. Sometimes referred to as W3. Arrows V1, V2, V4, V6, and V7 indicate the flow of the substrate W (W1 to W3).
　また各図においては、直交座標系の３軸をＸ、Ｙ、Ｚとし、ＸＹ平面を水平面、Ｚ方向を鉛直方向とする。特に、Ｘ方向は、矢印の方向を右側、その逆方向を左側と表現し、Ｙ方向は、矢印の方向を奥側、その逆方向を手前側と表現し、Ｚ方向は矢印の方向（重力上方）を上側、その逆方向を下側と表現する。さらに、Ｚ方向を中心軸とした回転方向をθ方向とする。 In each figure, the three axes of the orthogonal coordinate system are X, Y, and Z, the XY plane is the horizontal plane, and the Z direction is the vertical direction. In particular, the X direction represents the arrow direction on the right side and the opposite direction to the left side, the Y direction represents the arrow direction on the back side, and the opposite direction on the near side, and the Z direction represents the arrow direction (gravity). The upper direction is expressed as the upper side, and the opposite direction is expressed as the lower side. Further, the rotation direction with the Z direction as the central axis is defined as the θ direction.
　図１は、本発明を具現化する形態の一例の全体を示す平面図である。また、図２は、本発明を具現化する形態の一例を示すシステム構成図である。
本発明に係る自動ボンディング装置１は、基板供給部ＷＳと、ペースト塗布部ＰＰと、ボンディング部ＢＤと、チップ供給部ＣＳと、基板排出部ＷＥとを備えて構成されている。 FIG. 1 is a plan view showing the entirety of an example embodying the present invention. FIG. 2 is a system configuration diagram showing an example of a form embodying the present invention.
The automatic bonding apparatus 1 according to the present invention includes a substrate supply unit WS, a paste application unit PP, a bonding unit BD, a chip supply unit CS, and a substrate discharge unit WE.
　さらに、自動ボンディング装置１には、統括制御部ＭＣが備えられいる。統括制御部ＭＣは、基板供給部ＷＳ，ペースト塗布部ＰＰ，ボンディング部ＢＤ，チップ供給部ＣＳ，基板排出部ＷＥを、統括的に制御するものである。具体的には、統括制御部ＭＣは、制御用コントローラとその実行プログラムを含んで構成されている。より具体的には、制御用コントローラは、パソコンやプログラマブルコントローラと、上述の各部とデータや制御信号の入出力を行う機器などを含んで構成されており、基板供給部ＷＳ，ペースト塗布部ＰＰ，ボンディング部ＢＤ，チップ供給部ＣＳ，基板排出部ＷＥの各機器に対して制御信号やデータのやりとりをし、各部を個別に或いは各部を連携させながら統括的に制御するように構成されている。 Furthermore, the automatic bonding apparatus 1 is provided with an overall control unit MC. The overall control unit MC comprehensively controls the substrate supply unit WS, the paste application unit PP, the bonding unit BD, the chip supply unit CS, and the substrate discharge unit WE. Specifically, the overall control unit MC is configured to include a control controller and its execution program. More specifically, the control controller is configured to include a personal computer, a programmable controller, and the above-described units and devices for inputting / outputting data and control signals, and the substrate supply unit WS, paste application unit PP, Control signals and data are exchanged with each device of the bonding unit BD, the chip supply unit CS, and the substrate discharge unit WE, and each unit is controlled in an integrated manner individually or in cooperation with each unit.
　基板供給部ＷＳは、複数のデバイスチップＣ１～Ｃ４の接合対象となる基板（つまり、接合用ペーストが塗布される前の基板Ｗ１）を供給するものである。具体的には、基板供給部ＷＳは、隣接する上流工程の外部装置ＡＮ１から搬送された基板Ｗ１を自動ボンディング装置１へ供給するための、移載ロボットＷＳ１を備えて構成されている。移載ロボットＷＳ１には、基板Ｗ１を搬送するための移載ハンドＷＳ２と、移載ハンドＷＳ２を水平方向に移動させるための多関節アームＷＳ３と、多関節アームＷＳ３の向きや高さを変更する回転昇降機構ＷＳ４が備えられている。移載ロボットＷＳ１には、多関節アームＷＳ３や回転昇降機構ＷＳ４の移動若しくは回転を制御する制御部ＷＳ５が接続されており、制御部ＷＳ５からの制御指令に基づいて、基板Ｗ１の移載を行うことができる構成をしている。そして、制御部ＷＳ５は、統括制御部ＭＣと接続されており、統括制御部ＭＣからの制御指令に基づいて制御される。なお、基板供給部ＷＳは、この様な多関節アームＷＳ３を備えた構成の移載ロボットＷＳ１に限らず、１軸スライダーを備えて構成しても良い。 The substrate supply unit WS supplies a substrate to be bonded to the plurality of device chips C1 to C4 (that is, the substrate W1 before the bonding paste is applied). Specifically, the substrate supply unit WS includes a transfer robot WS1 for supplying the automatic bonding apparatus 1 with the substrate W1 transported from the adjacent external device AN1 in the upstream process. In the transfer robot WS1, the transfer hand WS2 for transporting the substrate W1, the articulated arm WS3 for moving the transfer hand WS2 in the horizontal direction, and the orientation and height of the articulated arm WS3 are changed. A rotary lifting mechanism WS4 is provided. The transfer robot WS1 is connected to a control unit WS5 that controls the movement or rotation of the articulated arm WS3 and the rotary lifting mechanism WS4, and transfers the substrate W1 based on a control command from the control unit WS5. It has a configuration that can. The control unit WS5 is connected to the overall control unit MC and is controlled based on a control command from the overall control unit MC. The substrate supply unit WS is not limited to the transfer robot WS1 having such a multi-joint arm WS3, and may be configured to include a single-axis slider.
　このような構成をしているため、基板供給部ＷＳは、外部装置ＡＮ１のベルトコンベアなどで搬送されてきた基板Ｗを、移載ハンドＷＳ２により下面側から上方に向けて持ち上げて保持し、破線で示す基板受取位置ＰＯ１で待機させておいた基板保持部２に移載することができる。 Due to such a configuration, the substrate supply unit WS lifts and holds the substrate W transported by the belt conveyor of the external apparatus AN1 from the lower surface side upward by the transfer hand WS2, and the broken line Can be transferred to the substrate holding unit 2 that has been waiting at the substrate receiving position PO1.
　なお、基板搬送部ＷＳは、図示したような外部装置ＡＮ１から基板Ｗ１を受け取る形態に限らず、基板Ｗ１を複数枚収容したカセットから取り出す形態であっても良い。また、基板搬送部ＷＳの移載ハンドＷＳ２は、上述の様な基板Ｗ１の下面側から上方に向けて持ち上げて保持する形態に限らず、基板Ｗ１の上面を真空吸着する形態や、基板Ｗ１の側面を狭持する形態など、基板Ｗ１を上下・水平方向に移載できる形態であれば良い。 The substrate transport unit WS is not limited to the form in which the substrate W1 is received from the external device AN1 as shown in the figure, but may be in the form of taking out from a cassette that houses a plurality of substrates W1. Further, the transfer hand WS2 of the substrate transport unit WS is not limited to a form in which the transfer hand WS2 is lifted and held upward from the lower surface side of the substrate W1 as described above, or a form in which the upper surface of the substrate W1 is vacuum-sucked, Any configuration that can transfer the substrate W1 in the vertical and horizontal directions, such as a configuration in which the side surface is held, may be used.
　ペースト塗布部ＰＰは、基板Ｗの電極パッドＰ１～Ｐ４の上に接合用ペーストＣＰを塗布するものである。具体的には、ペースト塗布部ＰＰは、基板Ｗの上面の所定位置に接合用ペーストＣＰをスクリーン印刷するためのスキージＰＰ１とブレードＰＰ２と、スキージＰＰ１の上面側に接合用ペーストＰＰを供給するペースト供給部ＰＰ４と、ブレードＰＰ２を矢印Ｖ３の方向やその逆方向に所定の速度で移動させ所定の位置で静止させるブレード移動機構ＰＰ５を含んで構成されている。また、ペースト塗布部ＰＰは、基板Ｗ１を基板受取位置から後述するボンディング位置へ移動させる経路の途中であって、基板保持部２のやや上方に配置されている。 The paste application part PP applies the bonding paste CP onto the electrode pads P1 to P4 of the substrate W. Specifically, the paste application part PP is a paste for supplying the bonding paste PP to the upper surface side of the squeegee PP1 and the squeegee PP1 and the blade PP2 for screen-printing the bonding paste CP at a predetermined position on the upper surface of the substrate W. It is configured to include a supply unit PP4 and a blade moving mechanism PP5 that moves the blade PP2 at a predetermined speed in the direction of the arrow V3 or in the opposite direction to stop at a predetermined position. The paste application part PP is arranged in the middle of the path for moving the substrate W1 from the substrate receiving position to the bonding position described later, and slightly above the substrate holding part 2.
　スキージＰＰ１には、基板Ｗの電極パッドＰ１～Ｐ４の相対的な位置及び間隔に対応した開口部ＰＰ３が設けられている。この開口部ＰＰ３は、接合用ペーストＣＰが通過できるように、メッシュと呼ばれる小さな孔部が多数設けられている。そしてペースト塗布部ＰＰは、基板保持部２の上に載置された基板Ｗ１の上面とスキージＰＰ１の下面とが僅かな隙間を保ちつつ対向している状態で、スキージＰＰ１の上面側に接合用ペーストＣＰを供給しておき、スキージＰＰ１の上面側から基板Ｗ１側に向けてブレードＰＰ２を押さえ付けながら矢印Ｖ３に示す方向に移動させる。なお、スキージＰＰ１の上面側に供給する接合用ペーストＣＰの量や、ブレードＰＰ２の移動速度は、接合用ペーストＣＰが所定の厚みで塗布が出来るように予め規定値を設定しておき、この規定値に基づいて制御するように、接合用ペースト供給部とブレード移動機構を構成しておく。また、ペースト供給部ＰＰ４とブレード移動機構ＰＰ５は、統括制御部ＭＣと接続されており、統括制御部ＭＣからの制御指令に基づいて制御される。 The squeegee PP1 is provided with openings PP3 corresponding to the relative positions and intervals of the electrode pads P1 to P4 of the substrate W. The opening PP3 is provided with many small holes called meshes so that the bonding paste CP can pass therethrough. The paste application part PP is used for bonding to the upper surface side of the squeegee PP1 with the upper surface of the substrate W1 placed on the substrate holding unit 2 and the lower surface of the squeegee PP1 facing each other with a slight gap. The paste CP is supplied and moved in the direction indicated by the arrow V3 while pressing the blade PP2 from the upper surface side of the squeegee PP1 toward the substrate W1 side. The amount of the bonding paste CP supplied to the upper surface side of the squeegee PP1 and the moving speed of the blade PP2 are set in advance so that the bonding paste CP can be applied with a predetermined thickness. The bonding paste supply unit and the blade moving mechanism are configured to control based on the values. The paste supply unit PP4 and the blade moving mechanism PP5 are connected to the overall control unit MC, and are controlled based on a control command from the overall control unit MC.
　このような構成をしているため、ペースト塗布部ＰＰは、基板表面に設けられた電極パッドＰ１～Ｐ４上に、所定の厚みで接合用ペーストＣＰを塗布することができる。 Because of such a configuration, the paste application part PP can apply the bonding paste CP with a predetermined thickness on the electrode pads P1 to P4 provided on the substrate surface.
　なお、ペースト塗布部ＰＰは、基板Ｗ１の上面とスキージＰＰ１の下面とが僅かな隙間が保たれた状態で対向している構成を示したが、この様な形態に限定されず、ペースト塗布部ＰＰ自体が上下方向に移動する構成としても良く、適宜クリアランスを確保したり、場合によっては基板ＷとスキージＰＰ１とを密着できる構成としても良い。 In addition, although the paste application part PP showed the structure which the upper surface of the board | substrate W1 and the lower surface of the squeegee PP1 faced in the state where the slight clearance gap was maintained, it is not limited to such a form, Paste application part The PP itself may be configured to move in the vertical direction, or may be configured such that a clearance is appropriately secured, or in some cases, the substrate W and the squeegee PP1 can be in close contact.
　またペースト塗布部ＰＰは、上述した様なスクリーン印刷の形態に限らず、接合用ペーストＣＰの粘度に応じて、ディスペンサ方式、インクジェット方式若しくはスプレー方式などによる塗布方式を採用することも可能である。 Further, the paste application part PP is not limited to the screen printing form as described above, and it is also possible to adopt an application method such as a dispenser method, an ink jet method or a spray method according to the viscosity of the bonding paste CP.
　チップ供給部ＣＳは、基板表面に設けられた電極パッドＰ１～Ｐ４の位置・間隔に対応させた状態で、これら電極パッドＰ１～Ｐ４の上にボンディングする複数のデバイスチップＣ１～Ｃ４を供給するものである。具体的には、チップ供給部ＣＳは、チップトレイホルダーＴＨと、チップマウンターＣＭと、チップスライダーＳＬと、チップ供給台７１とを備えて構成されている。 The chip supply unit CS supplies a plurality of device chips C1 to C4 to be bonded onto the electrode pads P1 to P4 in a state corresponding to the positions and intervals of the electrode pads P1 to P4 provided on the substrate surface. It is. Specifically, the chip supply unit CS includes a chip tray holder TH, a chip mounter CM, a chip slider SL, and a chip supply base 71.
　ここでは、基板ＷにボンディングするためのデバイスチップＣが、チップトレイＴと呼ばれる容器に収容された状態で運搬・搬送される形態を例示して説明する。チップトレイＴは、デバイスチップの外形寸法よりもやや大きめの凹み部を有し、複数の凹み部がマトリクス状に配列されたトレイ状の容器である。 Here, an example will be described in which a device chip C for bonding to the substrate W is transported and conveyed in a state of being accommodated in a container called a chip tray T. The chip tray T is a tray-shaped container having a recessed portion that is slightly larger than the outer dimensions of the device chip, and a plurality of recessed portions arranged in a matrix.
　チップトレイホルダーＴＨは、チップトレイＴを水平状態に維持しつつ、所定の位置で固定するためのものである。具体的には、チップトレイホルダーＴＨは、図に示すように、チップトレイＴの２つの対向する角部に沿うようなＬ字形状の固定金具（いわゆる、ブラケット）を配置して構成することができる。なお、チップトレイホルダＴＨは、チップ供給部ＣＳのベース部材ＣＳ１の上に取り付けられている。 The chip tray holder TH is for fixing the chip tray T in a predetermined position while maintaining the chip tray T in a horizontal state. Specifically, as shown in the figure, the chip tray holder TH is configured by arranging L-shaped fixing brackets (so-called brackets) along two opposing corners of the chip tray T. it can. Note that the chip tray holder TH is mounted on the base member CS1 of the chip supply unit CS.
　チップマウンターＣＭは、チップトレイＴに収納されているデバイスチップＣを１つずつ取り出し、チップ供給台７１の上に予め規定した位置に移載するためのものである。具体的には、チップマウンターＣＭは、チップ供給部ＣＳのベース部材ＣＳ１の上に取り付けられた、３軸直交ロボットモジュールを用いて構成することができる。３軸直交ロボットモジュールは、Ｙ方向に伸びる一対のレールＣＭ１と、レールＣＭ１上を所定の速度で移動し所定の位置で静止するスライダーＣＭ２と、スライダーＣＭ２に取り付けられた連結部材ＣＭ３と、連結部材ＣＭ３上に取り付けられたＺ方向に伸びる一対のレールＣＭ４と、レールＣＭ４上を所定の速度で移動し所定の位置で静止するスライダーＣＭ５と、スライダーＣＭ５に取り付けられた連結部材ＣＭ６と、連結部材ＣＭ６上に取り付けられたＸ方向に伸びる一対のレールＣＭ７と、レールＣＭ７上を所定の速度で移動し所定の位置で静止するスライダーＣＭ８とを含んで構成されている。スライダーＣＭ８には、連結部材ＣＭ９が取り付けられており、連結部材ＣＭ９には、アライメントカメラＣＭ１０と回転機構ＣＭ１１が取り付けられている。さらに回転機構ＣＭ１１には、ピックアップユニットＣＭ１２が取り付けられている。 The chip mounter CM is for taking out the device chips C stored in the chip tray T one by one and transferring them to a predetermined position on the chip supply base 71. Specifically, the chip mounter CM can be configured using a three-axis orthogonal robot module attached on the base member CS1 of the chip supply unit CS. The three-axis orthogonal robot module includes a pair of rails CM1 extending in the Y direction, a slider CM2 that moves on the rail CM1 at a predetermined speed and stops at a predetermined position, a connecting member CM3 attached to the slider CM2, and a connecting member A pair of rails CM4 attached on CM3 extending in the Z direction, a slider CM5 moving on rail CM4 at a predetermined speed and stationary at a predetermined position, a connecting member CM6 attached to slider CM5, and a connecting member CM6 It includes a pair of rails CM7 attached on the top and extending in the X direction, and a slider CM8 that moves on the rails CM7 at a predetermined speed and stops at a predetermined position. A connecting member CM9 is attached to the slider CM8, and an alignment camera CM10 and a rotation mechanism CM11 are attached to the connecting member CM9. Further, a pickup unit CM12 is attached to the rotation mechanism CM11.
　ピックアップユニットＣＭ１２は、デバイスチップＣをピックアップするものである。具体的には、ピックアップユニットＣＭ１２は、デバイスチップＣの上面を吸引し保持することができる吸引保持部と、吸引保持部を上下方向に移動させる移動機構が備えられている。そして、回転機構ＣＭ１１は、デバイスチップを保持し水平に保った状態で、符号ＣＭ１３にて示す「＋」の交点を通る上下方向の軸を回転中心として、θ方向に所定の角度だけ回転させ、その角度で静止させることができる。 The pickup unit CM12 picks up the device chip C. Specifically, the pickup unit CM12 includes a suction holding unit that can suck and hold the upper surface of the device chip C, and a moving mechanism that moves the suction holding unit in the vertical direction. Then, the rotation mechanism CM11 rotates the device chip by a predetermined angle in the θ direction with the vertical axis passing through the intersection of “+” indicated by reference numeral CM13 as the rotation center while holding the device chip horizontally. It can be stationary at that angle.
　アライメントカメラＣＭ１０は、ピックアップするデバイスチップの外形やアライメントマークの位置や向きなどを撮像し、チップトレイ内での向きを検出し、所定の方向にアライメントするためのものである。そして、チップマウンターＣＭの各スライダーＣＭ２，ＣＭ４，ＣＭ８や、回転機構ＣＭ１１等の各機器は、統括制御部ＭＣと接続されており、統括制御部ＭＣからの制御指令に基づいて制御される。 Alignment camera CM10 is for imaging the external shape of the device chip to be picked up and the position and orientation of the alignment mark, detecting the orientation in the chip tray, and aligning in a predetermined direction. Each device such as the sliders CM2, CM4, CM8 and the rotation mechanism CM11 of the chip mounter CM is connected to the overall control unit MC, and is controlled based on a control command from the overall control unit MC.
　このような構成をしているため、チップマウンターＣＭは、チップトレイ内で方向が不揃いな状態で収容されているデバイスチップＣをピックアップし、適宜アライメント処理を行いながら、チップ載置台７１に所定の向き、位置及び間隔で移載することができる。 Because of such a configuration, the chip mounter CM picks up the device chip C accommodated in a state in which the directions are not uniform in the chip tray and performs a predetermined alignment process on the chip mounting table 71 while performing a predetermined alignment process. Transfer can be performed in the direction, position and interval.
　チップスライダーＳＬは、複数のデバイスチップＣ１～Ｃ４の相対的な位置・間隔を保ったまま、ボンディング部ＢＤ側へスライドさせ、ヘッド部３の下方で静止させるものである。具体的には、チップスライダーＳＬは、チップ供給部ＣＳのベース部材ＣＳ１の上に取り付けられたベース材ＳＬ１と、ベース材ＳＬ１上に取り付けられたＹ方向に伸びる１対のレールＳＬ２と、レールＳＬ２の上を所定の速度で移動し所定の場所で静止するスライダーＳＬ３とが備えられている。スライダーＳＬ３は、連結部材７０を介してチップ供給台７１が取り付けられている。そして、スライダーＳＬ３は、統括制御部ＭＣと接続されており、統括制御部ＭＣからの制御指令に基づいて制御される。そのため、チップスライダーＳＬは、チップ供給台７１をヘッド部３側若しくはチップトレイＴ側に移動させ、所定の位置で静止させることができる。 The chip slider SL is slid to the bonding part BD side while keeping the relative positions and intervals of the plurality of device chips C1 to C4, and is stationary under the head part 3. Specifically, the chip slider SL includes a base material SL1 attached on the base member CS1 of the chip supply unit CS, a pair of rails SL2 attached on the base material SL1 and extending in the Y direction, and a rail SL2. And a slider SL3 that moves at a predetermined speed and stops at a predetermined position. A chip supply base 71 is attached to the slider SL3 via a connecting member 70. The slider SL3 is connected to the overall control unit MC, and is controlled based on a control command from the overall control unit MC. Therefore, the chip slider SL can move the chip supply base 71 to the head unit 3 side or the chip tray T side, and can stop at a predetermined position.
　なお、連結部材７０は、チップスライダーＳＬの構成部材やチップ供給台７１が、基板保持部２や基板保持部２のスライダーの構成部材と干渉することなく、チップ供給台７１をヘッド部３の下方へ移動させることができるように、スライダーＳＬ３からヘッド部３側にオーバーハングさせた形状をしている。 The connecting member 70 is configured such that the chip supply base 71 and the chip supply base 71 are located below the head part 3 without interfering with the constituent members of the chip holder SL and the slider of the substrate holding part 2. It is shaped to overhang from the slider SL3 to the head part 3 side.
　チップ供給台７１は、複数のデバイスチップＣ１～Ｃ４を載置するものである。
具体的には、チップ供給台７１は、上面を平坦な板材で構成し、上面を水平に配置し、移載したチップＣ１～Ｃ４が滑り落ちたり位置ずれしたいしない様に、当該上面に滑り止め加工を施したものが例示できる。あるいは、チップ供給台７１は、上面が平坦な板材で構成し、当該上面の移載されるチップＣ１～Ｃ４の外形より内側となる部分に微細な溝部や孔部を設けておき、この溝部や孔部を負圧状態にすることで、移載したチップＣ１～Ｃ４が滑り落ちたり位置ずれしたりしない様な構成としても良い。 The chip supply base 71 mounts a plurality of device chips C1 to C4.
Specifically, the chip supply base 71 is made of a flat plate on the upper surface, and the upper surface is horizontally disposed, so that the transferred chips C1 to C4 are not slipped on the upper surface so as not to slide down or be displaced. The thing which processed can be illustrated. Alternatively, the chip supply base 71 is formed of a plate material having a flat upper surface, and a fine groove or hole is provided in a portion inside the outer shape of the chips C1 to C4 to be transferred on the upper surface. A configuration may be adopted in which the transferred chips C1 to C4 are not slipped down or displaced by placing the hole in a negative pressure state.
　このような構成をしているため、チップ供給部ＣＳは、デバイスチップＣ１～Ｃ４を、基板Ｗ上の電極パッドＰ１～Ｐ４の位置・間隔に対応させた状態で予めチップ供給台７１の上に配置し、矢印Ｖ５に示す方向に移動させ、ヘッド部３の下方で待機させておくことができる。そのため、これらデバイスチップＣ１～Ｃ４は、詳細を後述するヘッド部３を用いて一度にピックアップでき、基板Ｗの電極パッドＰ１～Ｐ４上に所定の位置・間隔を保ってボンディングすることができる。 Because of such a configuration, the chip supply unit CS preliminarily places the device chips C1 to C4 on the chip supply base 71 in a state corresponding to the positions and intervals of the electrode pads P1 to P4 on the substrate W. It can arrange | position and move to the direction shown by arrow V5, and can be made to stand by under the head part 3. FIG. Therefore, these device chips C1 to C4 can be picked up at a time using the head unit 3 described later in detail, and can be bonded onto the electrode pads P1 to P4 of the substrate W at a predetermined position and interval.
　ボンディング部ＢＤは、詳細を後述するが、基板保持部２と、ヘッド部３と、ヘッド昇降機構４と、ヘッド加振部５とヒータ部とを備えて構成されている。 Although the details will be described later, the bonding unit BD includes a substrate holding unit 2, a head unit 3, a head lifting mechanism 4, a head vibration unit 5, and a heater unit.
　基板排出部ＷＥは、ボンディング部ＢＤでデバイスチップＣ１～Ｃ４が接合された基板Ｗ３を、基板保持部２から搬出するものである。具体的には、基板排出部ＷＥは、基板保持部２から基板Ｗ３を取り出し、隣接する下流工程の外部装置ＡＮ２へ搬出するための、移載ロボットＷＥ１を備えて構成されている。移載ロボットＷＥ１には、基板Ｗを搬送するための移載ハンドＷＥ２と、移載ハンドＷＥ２を水平方向に移動させるための多関節アームＷＥ３と、多関節アームＷＥ３の向きや高さを変更する回転昇降機構ＷＥ４が備えられている。移載ロボットＷＥ１には、多関節アームＷＥ３や回転昇降機構ＷＥ４の移動若しくは回転を制御する制御部ＷＥ５が接続されており、制御部ＷＥ５からの制御指令に基づいて、基板Ｗ３の移載を行うことができる構成をしている。そして、制御部ＷＥ５は、統括制御部ＭＣと接続されており、統括制御部ＭＣからの制御指令に基づいて制御される。なお、基板排出部ＷＥは、この様な多関節アームＷＥ３を備えた構成の移載ロボットＷＥ１に限らず、１軸スライダーを備えて構成しても良い。 The substrate discharge unit WE carries out the substrate W3 to which the device chips C1 to C4 are bonded at the bonding unit BD from the substrate holding unit 2. Specifically, the substrate discharge unit WE includes a transfer robot WE1 for taking out the substrate W3 from the substrate holding unit 2 and carrying it out to the external device AN2 in the adjacent downstream process. The transfer robot WE1 changes the orientation and height of the transfer hand WE2 for transporting the substrate W, the articulated arm WE3 for moving the transfer hand WE2 in the horizontal direction, and the articulated arm WE3. A rotary lifting mechanism WE4 is provided. The transfer robot WE1 is connected to a control unit WE5 that controls the movement or rotation of the articulated arm WE3 and the rotary lifting mechanism WE4, and transfers the substrate W3 based on a control command from the control unit WE5. It has a configuration that can. The control unit WE5 is connected to the overall control unit MC and is controlled based on a control command from the overall control unit MC. Note that the substrate discharge unit WE is not limited to the transfer robot WE1 having such a multi-joint arm WE3, and may include a single-axis slider.
　このような構成をしているため、基板排出部ＷＥは、デバイスチップが接合された基板Ｗ３を、破線で示す基板受渡位置ＰＯ２にて、移載ハンドＷＳ２により下面側から上方に向けて持ち上げて保持し、外部装置ＡＮ２へ移載することができる。 Due to such a configuration, the substrate discharge unit WE lifts the substrate W3 to which the device chip is bonded upward from the lower surface side by the transfer hand WS2 at the substrate delivery position PO2 indicated by a broken line. It can be held and transferred to the external device AN2.
　なお、基板排出部ＷＥは、図示したような外部装置ＡＮ２に基板Ｗ３を受け渡す形態に限らず、基板Ｗ３を複数枚収容可能なカセットへ充填する形態であっても良い。また、基板排出部ＷＥの移載ハンドＷＥ２は、上述の様な基板Ｗ３の下面側から上方に向けて持ち上げて保持する形態に限らず、基板Ｗ３の上面を真空吸着する形態や、基板Ｗ３の側面を狭持する形態など、基板Ｗ３を上下・水平方向に移載できる形態であれば良い。 Note that the substrate discharge unit WE is not limited to the form in which the substrate W3 is delivered to the external device AN2 as illustrated, but may be a form in which a cassette that can accommodate a plurality of substrates W3 is filled. In addition, the transfer hand WE2 of the substrate discharge unit WE is not limited to the form in which the transfer hand WE2 is lifted upward from the lower surface side of the substrate W3 as described above, but the form in which the upper surface of the substrate W3 is vacuum-sucked, Any configuration that can transfer the substrate W3 in the vertical and horizontal directions, such as a configuration in which the side surface is held, may be used.
　［ボンディング部詳細］
　図３Ａは、本発明を具現化する形態の一例の一部を示す正面図であり、本発明に係る自動ボンディング装置１のボンディング部ＢＤを示したものである。以下に、ボンディング部ＢＤの具体的な構成について説明する。 [Details of bonding part]
FIG. 3A is a front view showing a part of an example embodying the present invention, and shows a bonding part BD of the automatic bonding apparatus 1 according to the present invention. Below, the specific structure of the bonding part BD is demonstrated.
　基板保持部２は、デバイスチップの接合対象となる基板Ｗを保持するものである。具体的には、基板保持部２は、上面が水平な基板載置台２０を備えた構成とし、基板載置台２０の基板Ｗが載置される部分には、負圧吸引部や把持部などを適宜配置しておく。さらに、負圧吸引部は、基板載置台２０Ｗの上面に設けられた溝部や孔部と、真空ポンプなどの負圧発生手段と、それらを連通する連通ポートとを備えて構成しておく。また、連通ポートには、三方弁などの切替バルブなどを配置し、溝部や孔部を負圧状態若しくは大気解放状態に切り替えることが出来るようにしておく。 The substrate holding unit 2 holds the substrate W to be bonded to the device chip. Specifically, the substrate holding unit 2 includes a substrate mounting table 20 having a horizontal upper surface, and a negative pressure suction unit, a gripping unit, or the like is provided on a portion of the substrate mounting table 20 on which the substrate W is mounted. Arrange appropriately. Further, the negative pressure suction unit is configured to include a groove or hole provided on the upper surface of the substrate mounting table 20W, a negative pressure generating means such as a vacuum pump, and a communication port for communicating them. In addition, a switching valve such as a three-way valve is disposed in the communication port so that the groove and the hole can be switched to a negative pressure state or an atmospheric release state.
　さらに、基板保持部２は、ボンディング部ＢＤのベース部材１０上にＸ方向に伸びる一対のレール２５を配置し、レール２５上をＸ方向に移動するＸ軸スライダー２６の上に取り付けた、いわゆるＸ軸スライダー機構を備えて構成しておく。Ｘ軸スライダー２６は、統括制御部ＭＣと接続されており、統括制御部ＭＣからの制御信号に基づいて、所定の方向に所定の速度で移動し、所定の位置で静止することができる。 Further, the substrate holding unit 2 has a pair of rails 25 extending in the X direction on the base member 10 of the bonding unit BD, and is mounted on an X-axis slider 26 that moves on the rails 25 in the X direction. An axis slider mechanism is provided. The X-axis slider 26 is connected to the overall control unit MC, and can move at a predetermined speed in a predetermined direction and stop at a predetermined position based on a control signal from the overall control unit MC.
　具体的には、このＸ軸スライダー駆動機構は、Ｘ軸スライダー２６を、回転モータとボールねじにより駆動するものや、リニアモータにより駆動するもの、エアシリンダや油圧シリンダーにより駆動するものが例示できる。なお、図１に示す形態の自動ボンディング装置１では、基板受取位置、ペースト塗布部ＰＰの下方、ヘッド部３の下方、基板受渡位置に移動することができる構成をしており、図４では、基板の電極パット上に接合用ペーストＣＰが塗布された状態の基板Ｗ２が基板載置台２０に載置されている状態が示されている。 Specifically, this X-axis slider drive mechanism can be exemplified by a mechanism in which the X-axis slider 26 is driven by a rotary motor and a ball screw, a drive by a linear motor, and a drive by an air cylinder or a hydraulic cylinder. In the automatic bonding apparatus 1 of the form shown in FIG. 1, it is configured to be able to move to the substrate receiving position, below the paste application part PP, below the head part 3, and to the substrate delivery position. The state in which the substrate W2 in a state where the bonding paste CP is applied on the electrode pad of the substrate is mounted on the substrate mounting table 20 is shown.
　このような構成をしているため、基板保持部２は、基板Ｗの載置時や入れ替え時は基板保持力が作用せず、基板Ｗを載置した後に基板保持力が作用させることができ、基板Ｗの載置や入れ替えをスムーズにできる一方で、確実に基板Ｗを保持することができる。 Due to such a configuration, the substrate holding unit 2 does not have a substrate holding force when the substrate W is placed or replaced, and the substrate holding force can be applied after the substrate W is placed. While the substrate W can be placed and replaced smoothly, the substrate W can be securely held.
　ヘッド部３は、基板Ｗ上にボンディングする複数のデバイスチップチップＣ１～Ｃ４を一度に保持するものである。ヘッド部３は、チップ保持部３１と、ヒータ部３２とを備えて構成されている。 The head unit 3 holds a plurality of device chip chips C1 to C4 to be bonded on the substrate W at a time. The head unit 3 includes a chip holding unit 31 and a heater unit 32.
　チップ保持部３１は、複数のデバイスチップチップＣ１～Ｃ４を保持するものである。チップ保持部３１は、デバイスチップＣ１～Ｃ４をピックアップし、基板Ｗに接合するまでは保持力を作用させ、接合後にヘッド上昇させる前から次のデバイスチップをピックアップするまでは保持力を作用させない構成としておく。具体的には、チップ保持部３１は、その表面であって、ピックアップするデバイスチップＣ１～Ｃ４の外形より内側部分に、溝や孔を設けておく。そして、これら溝や孔は、外部の真空発生機構（図示せず）と切替バルブ（図示せず）などを介して接続しておき、真空状態と大気解放状態に切り替えできるようにしておく。そうすることで、チップ保持部３１は、適宜、デバイスチップＣ１～Ｃ４を吸着保持し、保持解除することができる。 The chip holding unit 31 holds a plurality of device chip chips C1 to C4. The chip holding unit 31 picks up the device chips C1 to C4 and applies a holding force until they are bonded to the substrate W, and does not apply a holding force until the next device chip is picked up after raising the head after bonding. Keep it as Specifically, the chip holding part 31 is provided with a groove or a hole on the surface thereof and inside the outer shape of the device chips C1 to C4 to be picked up. These grooves and holes are connected to an external vacuum generation mechanism (not shown) via a switching valve (not shown) and the like so that they can be switched between a vacuum state and an atmospheric release state. By doing so, the chip holding unit 31 can appropriately hold and release the device chips C1 to C4 by suction.
　なお、上述の基板保持部２の基板載置台２０と、チップ供給部ＣＳのチップ載置台７１と、ヘッド部３のチップ保持部３１とは、互いに平行となるように予め調整しておく。 Note that the substrate mounting table 20 of the above-described substrate holding unit 2, the chip mounting table 71 of the chip supply unit CS, and the chip holding unit 31 of the head unit 3 are adjusted in advance so as to be parallel to each other.
　ヒータ部３２は、電極パッドＰ１～Ｐ４と各デバイスチップＣ１～Ｃ４とを接合する接合用ペーストＣＰを加熱するものである。
具体的には、ヒータ部３２は、セラミックヒータやシーズヒータなどを用いて構成することができ、統括制御部ＭＣからの電圧や電圧制御により、加熱ＯＮ／ＯＦを切り替えたり、加熱温度が設定できるようにしておく。 The heater unit 32 heats the bonding paste CP for bonding the electrode pads P1 to P4 and the device chips C1 to C4.
Specifically, the heater unit 32 can be configured using a ceramic heater, a sheathed heater, or the like, and heating ON / OF can be switched or the heating temperature can be set by voltage or voltage control from the overall control unit MC. Keep it like that.
　このような構成をしているため、ヘッド部３に備えられたヒータ部３２は、複数のデバイスチップチップＣ１～Ｃ４を介して接合用ペーストＣＰを加熱することができる。 Because of such a configuration, the heater unit 32 provided in the head unit 3 can heat the bonding paste CP via the plurality of device chip chips C1 to C4.
　図４は、本発明を具現化する形態の一例の要部を示す概略図である。
図４には、基板保持部２の基板載置台２０と、ヘッド部３のチップ保持部３１とヒータ部３２と、チップ保持部３１の下面で保持されたデバイスチップＣ１～Ｃ４が示されている。さらに、基板載置台２０上には、本発明に係る自動ボンディング装置１で接合対象として扱う基板Ｗが載置されている。 FIG. 4 is a schematic diagram showing a main part of an example of a form embodying the present invention.
4 shows the substrate mounting table 20 of the substrate holding unit 2, the chip holding unit 31 and the heater unit 32 of the head unit 3, and the device chips C1 to C4 held by the lower surface of the chip holding unit 31. . Further, a substrate W to be handled as a bonding target in the automatic bonding apparatus 1 according to the present invention is mounted on the substrate mounting table 20.
　なお、本発明に係る自動ボンディング装置１で接合対象として扱う基板Ｗは、その表面に形成された電極パッドＰ１～Ｐ４上に、接合用ペーストＣＰが予め適量塗布されている。さらに、この接合用ペーストＣＰは、接合時の圧力を考慮した上で、例えばスクリーン印刷によって、電極パッドＰ１～Ｐ４の外形より内側に所定の厚みで（つまり、必要量だけ）塗布される。 It should be noted that the substrate W handled as a bonding target in the automatic bonding apparatus 1 according to the present invention is preliminarily coated with an appropriate amount of bonding paste CP on the electrode pads P1 to P4 formed on the surface thereof. Further, the bonding paste CP is applied with a predetermined thickness (that is, a necessary amount) inside the outer shape of the electrode pads P1 to P4 by, for example, screen printing in consideration of the pressure at the time of bonding.
　ヘッド昇降機構４は、基板保持部２及びチップ供給部ＣＳに対してヘッド部３を上下方向に昇降移動させるものである。ヘッド部３は、ヘッド昇降機構４の可動側部材であるＺ軸スライダー４３に取り付けられている。 The head elevating mechanism 4 moves the head unit 3 up and down with respect to the substrate holding unit 2 and the chip supply unit CS. The head unit 3 is attached to a Z-axis slider 43 that is a movable member of the head lifting mechanism 4.
　図３Ｂは、本発明を具現化する形態の一例の全体を示す概略図である。
図３Ａは、ヘッド昇降機構４のＺ軸スライダー４３とヘッド部３が上昇した状態を示しており、図３Ｂは、Ｚ軸スライダー４３とヘッド部３が下降した状態を示している。 FIG. 3B is a schematic diagram showing an entire example of a form embodying the present invention.
3A shows a state in which the Z-axis slider 43 and the head unit 3 of the head lifting mechanism 4 are raised, and FIG. 3B shows a state in which the Z-axis slider 43 and the head unit 3 are lowered.
　具体的には、ヘッド昇降機構４は、ベースプレート４１と、ベースプレート４１上に配置したＺ方向に伸びる一対のレール４２と、レール４２上をＺ方向に移動するＺ軸スライダー４６を備えておく。そして、Ｚ軸スライダー４３には、ボールねじ４４を介して回転モータ４５が取り付けられている。回転モータ４５は、統括制御部ＭＣからの制御信号に基づいて、所定の方向に所定の回転速度で回転し、所定の角度で静止することができる。そのため、統括制御部ＭＣからの信号制御に基づいて、Ｚ軸スライダー４３を所定の方向に、所定の速度で移動させ、所定の場所で静止させることができる。さらに具体的には、回転モータ４５の回転をメカニカルに制止させる、ブレーキ機構（図示せず）を備えた構成としても良い。また、ヘッド部３は、適宜連結部材３３，３４，３５を介して、Ｚ軸スライダー４３に取り付けられている。そのため、ヘッド部３は、統括制御部ＭＣからの制御信号に基づいて、上下方向に昇降移動でき、所定の位置で静止することができる。 Specifically, the head lifting mechanism 4 includes a base plate 41, a pair of rails 42 arranged on the base plate 41 and extending in the Z direction, and a Z-axis slider 46 that moves on the rails 42 in the Z direction. A rotation motor 45 is attached to the Z-axis slider 43 via a ball screw 44. The rotation motor 45 can rotate at a predetermined rotation speed in a predetermined direction and can stop at a predetermined angle based on a control signal from the overall control unit MC. Therefore, based on signal control from the overall control unit MC, the Z-axis slider 43 can be moved at a predetermined speed in a predetermined direction and can be stopped at a predetermined location. More specifically, it may be configured to include a brake mechanism (not shown) that mechanically stops the rotation of the rotary motor 45. Further, the head portion 3 is attached to the Z-axis slider 43 through connecting members 33, 34, and 35 as appropriate. Therefore, the head unit 3 can be moved up and down in the vertical direction based on a control signal from the overall control unit MC, and can be stationary at a predetermined position.
　また、ヘッド昇降機構４は、上述のような回転モータを用いた形態に限らず、エアシリンダや油圧シリンダーを用いて、Ｚ軸スライダー４３を上下方向に昇降移動させる構成としても良い。 Further, the head elevating mechanism 4 is not limited to the form using the rotary motor as described above, and the Z-axis slider 43 may be moved up and down using an air cylinder or a hydraulic cylinder.
　なお、ヘッド昇降機構４は、ヘッド部３を水平方向に移動する必要がなければ、ベースプレート４１や連結部材１１を介して装置フレーム１０に固定状態で取り付けても良い。この場合、上述のチップ供給部ＣＳには、基板保持部２と物理的に干渉しない状態を維持しつつ、チップ載置台７１をヘッド部３の下方まで移動させ、その状態で待機させる機構を備えた構成としておく。 The head elevating mechanism 4 may be fixedly attached to the apparatus frame 10 via the base plate 41 or the connecting member 11 if it is not necessary to move the head unit 3 in the horizontal direction. In this case, the above-described chip supply unit CS includes a mechanism for moving the chip mounting table 71 to a position below the head unit 3 and waiting in that state while maintaining a state in which the chip supply unit CS does not physically interfere with the substrate holding unit 2. The configuration is left as it is.
　一方、ヘッド昇降機構４は、Ｘ方向に移動させる必要があれば、図１，３に示すような、Ｘ方向に移動可能な構成としておくことが好ましい。この場合、連結部材１１上に、Ｘ方向に伸びる一対のレール１５を配置し、レール１５上をＸ方向に移動するＸ軸スライダー１６を備え、Ｘ軸スライダー１６にベースプレート４１を取り付けておく。そして、統括制御部ＭＣからの制御信号に基づいて、Ｘ軸スライダー１６を所定の速度で移動させ、所定の場所で制止させる、Ｘ軸スライダー駆動機構を備えておく。 On the other hand, the head lifting mechanism 4 is preferably configured to be movable in the X direction as shown in FIGS. In this case, a pair of rails 15 extending in the X direction are arranged on the connecting member 11, the X axis slider 16 moving in the X direction on the rail 15 is provided, and the base plate 41 is attached to the X axis slider 16. An X-axis slider drive mechanism is provided that moves the X-axis slider 16 at a predetermined speed and stops it at a predetermined location based on a control signal from the overall control unit MC.
　具体的には、Ｘ軸スライダー駆動機構は、Ｘ軸スライダー１６を、回転モータとボールねじにより駆動するものや、リニアモータにより駆動するもの、エアシリンダや油圧シリンダーにより駆動するものが例示できる。そうすれば、ヘッド部３によりデバイスチップＣ１～Ｃ４をピックアップする場所と、チップデバイスＣ１～Ｃ４を基板Ｗに接合する場所を、個別に設定することができる。 Specifically, examples of the X-axis slider drive mechanism include those in which the X-axis slider 16 is driven by a rotary motor and a ball screw, those that are driven by a linear motor, and those that are driven by an air cylinder or a hydraulic cylinder. By doing so, it is possible to individually set a place where the head unit 3 picks up the device chips C1 to C4 and a place where the chip devices C1 to C4 are bonded to the substrate W.
　ヘッド加振部５は、ヘッド部３を上下方向に加振するものである。具体的には、ヘッド加振部５は、高周波振動発生器５１などが例示でき、連結部材３３，３４を介してヘッド部３が取り付けられている連結部材３５に取り付けておく。高周波振動発生器５１は、統括制御部ＭＣからの制御信号に基づいて、所定の振幅・周波数で、適宜振動する。更に具体的には、高周波振動発生器５１は、その内部に回転モータを備え、その回転モータに取り付けられた偏心おもりが回転することで、矢印５２に示す方向に振動が発生するものが例示できる。或いは、高周波振動発生器５１は、所定の重量を有する振動子が往復動することで、矢印５２に示す方向に振動が発生するものでも良い。 The head vibration unit 5 vibrates the head unit 3 in the vertical direction. Specifically, the head excitation unit 5 can be exemplified by a high-frequency vibration generator 51 or the like, and is attached to the connecting member 35 to which the head unit 3 is attached via the connecting members 33 and 34. The high frequency vibration generator 51 appropriately vibrates with a predetermined amplitude and frequency based on a control signal from the overall control unit MC. More specifically, the high-frequency vibration generator 51 includes a rotary motor therein, and the eccentric weight attached to the rotary motor rotates to generate vibration in the direction indicated by the arrow 52. . Alternatively, the high-frequency vibration generator 51 may generate a vibration in the direction indicated by the arrow 52 when a vibrator having a predetermined weight reciprocates.
　なお、デバイスチップのボンディングに用いられる接合用ペーストＣＰは、高粘度のため、単なる加圧だけでは均一に押し広げることが難しい。つまり、接合用ペーストＣＰが塗布されている領域の中央部と周辺部とでは、接合用ペーストＣＰの厚みを均一に保ったままで薄く押し広げることが難しい。そのため、接合前のデバイスチップＣ１～Ｃ４を電極パッドＰ１～Ｐ４上に塗布された接合用ペーストＣＰと接触させた後、加振することにより、加振を加えない場合よりもさらに、接合用ペーストＣＰを均一に薄く押し広げつつ、デバイスチップＣ１～Ｃ４と電極パッドＰ１～Ｐ４との間隔を近づけることができる。そのため、本発明に係る自動ボンディング装置１は、特に高粘度の接合用ペーストＣＰが塗布された基板Ｗに対して複数のデバイスチップを接合するのに好適な形態と言える。 It should be noted that the bonding paste CP used for bonding the device chip has a high viscosity, so that it is difficult to spread it even by simple press. That is, it is difficult to spread the bonding paste CP thinly while keeping the thickness of the bonding paste CP uniform at the central portion and the peripheral portion of the region where the bonding paste CP is applied. Therefore, the bonding paste is further applied by applying vibration after bringing the device chips C1 to C4 before bonding into contact with the bonding paste CP applied on the electrode pads P1 to P4. The distance between the device chips C1 to C4 and the electrode pads P1 to P4 can be reduced while pushing the CP uniformly and thinly. Therefore, it can be said that the automatic bonding apparatus 1 according to the present invention is a suitable form for bonding a plurality of device chips to the substrate W coated with the high-viscosity bonding paste CP.
　図５は、本発明を具現化する形態の一例の要部を示す断面図であり、基板保持部２の基板載置台２０と、その内部に組み込まれた、基板昇降機構２８と、基板載置位置検出部２４が示されている。 FIG. 5 is a cross-sectional view showing a main part of an example embodying the present invention. The substrate mounting table 20 of the substrate holding unit 2, the substrate lifting / lowering mechanism 28 incorporated therein, and the substrate mounting A position detector 24 is shown.
　基板載置台２０は、基板Ｗを支える支持部材のうち、接合される前記複数のデバイスチップの少なくとも外周部及びその外側に対応する部分が、透明体で構成されている。 In the substrate mounting table 20, at least the outer peripheral portions of the plurality of device chips to be bonded and the portions corresponding to the outside of the supporting members that support the substrate W are made of a transparent body.
　具体的には、基板載置台２０は、支持部材２１と、フレーム部材２２と、吸着部２３を含んで構成されている。支持部材２１は、基板Ｗと触れ合って基板Ｗを直接支持するものである。支持部材２１は、保護板２１ａ、ヒータ部２１ｂ、補強板２１ｃ、断熱部２１ｇとで構成されている。 Specifically, the substrate mounting table 20 includes a support member 21, a frame member 22, and a suction portion 23. The support member 21 touches the substrate W and directly supports the substrate W. The support member 21 includes a protective plate 21a, a heater portion 21b, a reinforcing plate 21c, and a heat insulating portion 21g.
　保護板は２１ａは、基板Ｗと直接触れ合い、ヒータ部２１ｂで発熱した熱エネルギーを基板Ｗへ伝えるものである。また、ヒータ部２１ｂと基板Ｗとを電気的に絶縁するものである。ヒータ部２１ｂは、基板Ｗを加熱するためのものである。補強板２１ｃは、支持部材２１の強度を確保しつつ、ヒータ部２１ｂで発熱した熱エネルギーがフレーム部材２２へ逃げるのを防ぐためのものである。断熱部２１ｇは、ヒータ部２１ｂで発熱した熱エネルギーがフレーム部材２２へ逃げるのを防ぐためのものである。 The protective plate 21a is in direct contact with the substrate W and transmits heat energy generated by the heater 21b to the substrate W. Moreover, the heater part 21b and the board | substrate W are electrically insulated. The heater unit 21b is for heating the substrate W. The reinforcing plate 21 c is for preventing the heat energy generated by the heater portion 21 b from escaping to the frame member 22 while ensuring the strength of the support member 21. The heat insulating portion 21g is for preventing the heat energy generated by the heater portion 21b from escaping to the frame member 22.
　より具体的には、保護板２１ａ、補強板２１ｃは、ガラス板で構成されている。ヒータ部２１ｂは、ガラス板と、その表面に形成されたＩＴＯやＩＺＯなどの透明電極で構成されている。ヒータ部２１ｂは、この透明電極に電流・電圧を印可することで、透明電極の内部抵抗により発熱する。そして、この透明電極に印可する電圧や電圧は、ヒータ部２１ｂに接続されたヒータ制御部２１ｋにより制御され、ヒータ部２１ｂに対する加熱ＯＮ／ＯＦを切り替えたり、加熱温度が設定できるようにしておく。なお、ヒータ制御部２１ｋは、統括制御部ＭＣからの制御信号に基づいて制御される。 More specifically, the protective plate 21a and the reinforcing plate 21c are made of glass plates. The heater unit 21b includes a glass plate and a transparent electrode such as ITO or IZO formed on the surface thereof. The heater unit 21b generates heat due to the internal resistance of the transparent electrode by applying current and voltage to the transparent electrode. The voltage and voltage applied to the transparent electrode are controlled by a heater control unit 21k connected to the heater unit 21b, so that heating ON / OF for the heater unit 21b can be switched and the heating temperature can be set. The heater control unit 21k is controlled based on a control signal from the overall control unit MC.
　断熱部２１ｇは、シリカやアルミナなどの耐熱性と断熱性を兼ね備えた材料で構成し、所定の幅と厚みで、ヒーター部２１ｂの外縁部とフレーム部材２２との間に配置されている。そのため、ヒーター部２１ｂの外縁部は、フレーム部材２２に直接触れない。 The heat insulating portion 21g is made of a material having both heat resistance and heat insulating properties such as silica and alumina, and is arranged between the outer edge portion of the heater portion 21b and the frame member 22 with a predetermined width and thickness. Therefore, the outer edge part of the heater part 21b does not touch the frame member 22 directly.
　このような構成をしているため、ヒータ部２１ｂは、保護板２１ａ、基板Ｗ、複数の電極パッドＰ１～Ｐ４を介して接合用ペーストＣＰを加熱することができる。なお、支持部材２１は、ヒータ部を組み込まない場合には、単層のガラス板で構成しても良い。 Because of this configuration, the heater unit 21b can heat the bonding paste CP through the protective plate 21a, the substrate W, and the plurality of electrode pads P1 to P4. Note that the support member 21 may be formed of a single-layer glass plate when the heater portion is not incorporated.
　フレーム部材２２は、支持部材２１を支持するものである。
フレーム部材２１ｂは、上面に開口部を設けた箱体や額縁状の筐体で構成されている。
ヘッド部３が下降し、基板ＷにデバイスチップＣ１～Ｃ４を加圧する際に、基板Ｗが載置された支持部材２１全体を下面側から支えるものである。 The frame member 22 supports the support member 21.
The frame member 21b is configured by a box or a frame-like housing having an opening on the upper surface.
When the head unit 3 moves down and presses the device chips C1 to C4 to the substrate W, the entire support member 21 on which the substrate W is placed is supported from the lower surface side.
　吸着部２３は、基板Ｗを吸着するための連通ポートである。
具体的には、吸着部２３は、載置される基板Ｗの外周部より内側の部分に、支持部材２１やフレーム部材２２を貫通し、外部のへ連通する構成をしている。より具体的には、吸着部２３は、外部の真空発生機構（図示せず）と切替バルブ（図示せず）などを介して接続し、真空状態と大気解放状態に切り替えできるようにしておく。さらに、保護板２１ａには、所定パターンの溝などを設けておき、基板Ｗを効率よく吸着ＯＮ／ＯＦＦできる構造としても良い。 The suction unit 23 is a communication port for sucking the substrate W.
Specifically, the adsorbing portion 23 is configured to penetrate the support member 21 and the frame member 22 in a portion inside the outer peripheral portion of the substrate W to be placed and communicate with the outside. More specifically, the adsorbing unit 23 is connected to an external vacuum generation mechanism (not shown) via a switching valve (not shown) or the like so that it can be switched between a vacuum state and an atmospheric release state. Further, the protective plate 21a may be provided with a groove having a predetermined pattern so that the substrate W can be efficiently suctioned ON / OFF.
　尚、支持部材２１を構成する各部材には、後述するリフトピン２８ａが通過し往復動作できる程度の位置及び大きさの開口部２１ｈが設けられている。 Each member constituting the support member 21 is provided with an opening portion 21h having a position and a size enough to allow a later-described lift pin 28a to pass and reciprocate.
　基板載置位置検出部２４は、基板Ｗ１が基板保持部２のどこに載置されたかを検出するものものである。具体的には、基板載置位置検出部２４は、ＣＣＤやＣＭＯＳを撮像素子とするエリアセンサーカメラ２４Ｃと、撮像用レンズ２４Ｌとを組み合わせて構成されている。そして、基板Ｗ１の外辺や角部、或いは基板Ｗ１に付加されたアライメントマークの位置を観察して検出できるように構成されている。そのため、移載ロボットＷＳ１を用いて基板Ｗ１を移載し、基板保持部２で吸着保持されるまで、基板Ｗ１の正確な位置が不確かであっても、基板Ｗ１が基板保持部２の支持部材２１上のどこに載置されているか、正確に位置を検出をすることができる。 The substrate placement position detection unit 24 detects where the substrate W1 is placed on the substrate holding unit 2. Specifically, the substrate placement position detection unit 24 is configured by combining an area sensor camera 24C having an image sensor with a CCD or CMOS and an imaging lens 24L. And it is comprised so that the position of the outer edge and corner | angular part of the board | substrate W1, or the alignment mark added to the board | substrate W1 can be observed and detected. Therefore, the substrate W1 is supported by the substrate holding unit 2 even if the substrate W1 is uncertainly located until the substrate W1 is transferred using the transfer robot WS1 and sucked and held by the substrate holding unit 2. It is possible to accurately detect the position on the position 21.
　なお、基板載置位置検出部２４は、基板保持部２に組み込まれた形態に限らず、エリアセンサーカメラ２４Ｃを基板受取位置ＰＯ１の上方に配置し、撮像用レンズ２４Ｌを下向きにして、基板Ｗ１の上面を見下ろす形態であっても良い。この場合、基板Ｗ１が基板保持部２に載置され保持された後の状態で、基板Ｗ１の外形若しくは基板Ｗ１に付加されたアライメントマークを一度に若しくは複数回に分けて観察し位置検出する構成としておく。 The substrate placement position detection unit 24 is not limited to the form incorporated in the substrate holding unit 2, and the area sensor camera 24C is disposed above the substrate reception position PO1, the imaging lens 24L faces downward, and the substrate W1. The form which looks down on the upper surface of may be sufficient. In this case, after the substrate W1 is placed and held on the substrate holding unit 2, the position of the substrate W1 or the alignment mark added to the substrate W1 is observed at one time or divided into a plurality of times to detect the position. Keep it as
　また、基板観察部２４は、上述のエリアセンサーカメラ２４Ｃと撮像用レンズ２４Ｌを用いた形態に限らず、レーザ変位計などの基板Ｗ１の外辺や角部の位置が検出できるものを用いた構成であっても良い。 Further, the substrate observation unit 24 is not limited to the form using the area sensor camera 24C and the imaging lens 24L described above, and a configuration using a device capable of detecting the position of the outer side or corner of the substrate W1, such as a laser displacement meter. It may be.
　基板載置位置検出部２４で検出された基板Ｗ１の位置情報は、予め設定された基準位置とのずれ量の演算（いわゆる、アライメント演算）が行われ、基板Ｗ１上に塗布する接合用ペーストＣＰの塗布位置や、接合されるデバイスチップの接合位置にフィードバックされる。 The position information of the substrate W1 detected by the substrate mounting position detection unit 24 is calculated as a deviation amount from a preset reference position (so-called alignment calculation), and the bonding paste CP applied on the substrate W1. Is fed back to the application position and the bonding position of the device chip to be bonded.
　基板昇降機構２８は、基板供給部ＷＳから基板Ｗ１の受取りをスムーズに行うためのものである。具体的には、基板昇降機構２８は、リフトピン２８ａと、連結部材２８ｂと、昇降ユニット２８ｃを備えている。
リフトピン２８ａは、基板Ｗ１を支えるものである。
連結部材２８ｂは、リフトピン２８ａと昇降ユニット２８ｃの可動部２８ｄとを連結するものである。
昇降ユニット２８ｃは、リフトピン２８ａと連結部材２８ｂが取り付けられた可動部２８ｄを上下（ｚ方向）に移動させるものであり、フレーム部材２２に取り付けられている。 The substrate lifting mechanism 28 is for smoothly receiving the substrate W1 from the substrate supply unit WS. Specifically, the substrate lifting mechanism 28 includes a lift pin 28a, a connecting member 28b, and a lifting unit 28c.
The lift pins 28a support the substrate W1.
The connecting member 28b connects the lift pin 28a and the movable part 28d of the elevating unit 28c.
The elevating unit 28c moves the movable portion 28d, to which the lift pin 28a and the connecting member 28b are attached, up and down (z direction), and is attached to the frame member 22.
　図５では、リフトピン２８ａ，連結部材２８ｂ，可動部２８ｄが下降端にある状態を実線で示しており、上昇端にある状態を破線で示している。 In FIG. 5, the state where the lift pin 28a, the connecting member 28b, and the movable portion 28d are at the lower end is indicated by a solid line, and the state at the upper end is indicated by a broken line.
　この様な構成をしているため、基板昇降機構２８は、可動部２８ｄを上昇端に移動させて基板Ｗ１を受け取り、可動部２８ｄを下降端に移動させて基板Ｗ１を支持部材２１上に載置することができる。 Due to such a configuration, the substrate lifting mechanism 28 moves the movable portion 28d to the rising end to receive the substrate W1, and moves the movable portion 28d to the falling end to place the substrate W1 on the support member 21. Can be placed.
　なお、上述の支持部材２１に用いられる材料は、ガラス板に限られず、基板載置位置検出部２４の位置検出用の光の波長が透過する材質であれば良い。つまり、観察光が可視光線であれば、アクリル樹脂、ＰＥＴ樹脂、ポリカーボネート樹脂などの狭義の透明体を選定することができる。一方、観察光が近赤外線などであれば、近赤外線が通過するセラミック材料など、広義の透明体を選定することができる。 Note that the material used for the support member 21 is not limited to a glass plate, and may be any material that transmits the wavelength of light for position detection of the substrate placement position detection unit 24. That is, if the observation light is visible light, a narrowly defined transparent body such as an acrylic resin, a PET resin, or a polycarbonate resin can be selected. On the other hand, if the observation light is near infrared, a transparent material in a broad sense such as a ceramic material through which the near infrared passes can be selected.
　ボンディング動作及びペースト状態の検査に関する一連の動作は、以下の通りである。
図６は、本発明を具現化する形態の一例におけるタイムチャートであり、自動ボンディング装置１を構成する各部の一連の動作を時系列的に示したものである。 A series of operations relating to the bonding operation and paste state inspection are as follows.
FIG. 6 is a time chart in an example of an embodiment embodying the present invention, and shows a series of operations of each part constituting the automatic bonding apparatus 1 in time series.
　基板供給部ＷＳは、予め上流工程ＡＮ１から基板を受け取っておき、基板受取位置ＰＯ１にて、基板保持部２の基板載置台２０に基板Ｗ１を載置（つまり、基板供給）する。そして、基板載置台２０にて基板Ｗ１の吸着保持を行い、基板Ｗ１の位置アライメントを行い、基板Ｗ１をペースト塗布部ＰＰの下方へ移動させ、静止させる。そして、基板Ｗ１の所定位置に接合用ペーストＣＰを塗布する。 The substrate supply unit WS receives a substrate from the upstream process AN1 in advance, and places the substrate W1 on the substrate mounting table 20 of the substrate holding unit 2 at the substrate receiving position PO1 (ie, substrate supply). Then, the substrate W 20 is sucked and held by the substrate mounting table 20, the position alignment of the substrate W1 is performed, and the substrate W1 is moved below the paste application part PP to be stationary. Then, the bonding paste CP is applied to a predetermined position of the substrate W1.
　一方、チップ供給部ＣＳでは、トレイＴからデバイスチップをピックアップし、アライメントし、チップスライダＳＬ上のチップ載置台７１の所定位置に、１つずつデバイスチップＣ１～Ｃ４を載置する。 On the other hand, the chip supply unit CS picks up the device chips from the tray T, aligns them, and places the device chips C1 to C4 one by one at a predetermined position of the chip mounting table 71 on the chip slider SL.
　チップ載置台７１へのデバイスチップＣ１～Ｃ４の載置が完了すれば、スライダーＳＬ３をヘッド部３側に移動し、ヘッド部３を下降させ、ヘッド部３でデバイスチップＣ１～Ｃ４を吸着保持する。その後、ヘッド部３を上昇させ、スライダーＳＬ３をトレイ側に移動する。その後、接合用ペーストが塗布された基板Ｗ２をヘッド部３の下方へ移動させ、静止させ、ヘッド部３を下降する。そして、ヘッド部３で保持したデバイスチップＣ１～Ｃ４と基板Ｗ２の接合ペーストＣＰとを接触させ、ヒータ部で加熱を行いながら、ヘッド加振部５を作動させながら、ヘッド部３はデバイスチップＣ１～Ｃ４を基板Ｗ２側へ押し付ける。そして、所定時間この状態が維持され、デバイスチップＣ１～Ｃ４が基板Ｗに接合される。デバイスチップの接合が済めば、ヘッド部３はチップの吸着を解除し、ヘッド部３は上昇し、デバイスチップＣ１～Ｃ４が接合された基板Ｗ３と離隔した状態となる。そして、基板載置台２０を基板受渡位置ＰＯ２へ移動させ、基板排出部ＷＥで基板Ｗ３を基板載置台２０から取り出し、基板Ｗ３を下流工程ＡＮ２へ排出する。基板載置台２０は、再び基板受取位置ＰＯ１へ移動し、上述と同様に、次の基板Ｗ１が載置され、接合用ペースト塗布以降の一連の動作が繰り返される。 When the mounting of the device chips C1 to C4 on the chip mounting table 71 is completed, the slider SL3 is moved to the head part 3 side, the head part 3 is lowered, and the device chips C1 to C4 are sucked and held by the head part 3. . Thereafter, the head unit 3 is raised, and the slider SL3 is moved to the tray side. Thereafter, the substrate W <b> 2 coated with the bonding paste is moved below the head unit 3 to be stopped, and the head unit 3 is lowered. Then, the device chips C1 to C4 held by the head unit 3 and the bonding paste CP of the substrate W2 are brought into contact with each other, while heating the heater unit and operating the head vibration unit 5, the head unit 3 is connected to the device chip C1. ... C4 is pressed toward the substrate W2. This state is maintained for a predetermined time, and the device chips C1 to C4 are bonded to the substrate W. When the bonding of the device chips is completed, the head unit 3 releases the suction of the chip, the head unit 3 moves up, and is separated from the substrate W3 to which the device chips C1 to C4 are bonded. Then, the substrate mounting table 20 is moved to the substrate delivery position PO2, the substrate discharge unit WE takes out the substrate W3 from the substrate mounting table 20, and discharges the substrate W3 to the downstream process AN2. The substrate mounting table 20 moves again to the substrate receiving position PO1, and the next substrate W1 is mounted in the same manner as described above, and a series of operations after applying the bonding paste is repeated.
　一方、チップ供給部ＣＳは、次のデバイスチップＣ１をピックアップし、アライメントし、スライダーＳＬ３がトレイ側に移動し、静止したら、上述と同様に、次のデバイスチップＣ１をチップ載置台７１の所定位置に載置し、続いて他のデバイスチップＣ２～Ｃ４を載置する、一連の動作が繰り返される。 On the other hand, the chip supply unit CS picks up and aligns the next device chip C1, and when the slider SL3 moves to the tray side and stops, the next device chip C1 is placed at a predetermined position on the chip mounting table 71 as described above. Then, a series of operations of placing the other device chips C2 to C4 is repeated.
　なお、ヘッド部３を下降させ、静止させるときは、基板Ｗの電極パッドＰ１～Ｐ４上に塗布された接合用ペーストＣＰの上にデバイスチップＣ１～Ｃ４が接触したかどうかを判断する。この接触判断は、回転モータの電流値が上昇したり、Ｚ軸スライダーの位置や位置変化量の減少に基づいて判断したり、基板保持部２やヘッド部３に予め組み込んでおいた圧力センサの信号出力に基づいて判断したりすることが可能である。或いは、ヘッド部３の下方に、デバイスチップＣ１～Ｃ４の下面と接合ペーストＣＰの上面との隙間を検出するセンサを配置し、当該隙間が無くなたことを検出する構成としても良い。そして、基板Ｗの電極パッドＰ１～Ｐ４上に塗布された接合用ペーストＣＰの上にデバイスチップＣ１～Ｃ４が接触したと判断されれば、ヘッド加振部５を作動させて接合用ペーストＣＰを均一に薄く押し広げる。なお、ヘッド加振部５の作動と、ヒータ部の作動タイミングは、接合対象に合わせて、適宜ＯＮ／ＯＦＦするタイミングを設定しておく。 Note that when the head unit 3 is lowered and stopped, it is determined whether or not the device chips C1 to C4 are in contact with the bonding paste CP applied on the electrode pads P1 to P4 of the substrate W. This contact determination is made based on the increase in the current value of the rotary motor, the position of the Z-axis slider or a decrease in the position change amount, or the pressure sensor previously incorporated in the substrate holding unit 2 or the head unit 3. It is possible to make a judgment based on the signal output. Alternatively, a sensor for detecting a gap between the lower surfaces of the device chips C1 to C4 and the upper surface of the bonding paste CP may be arranged below the head unit 3 to detect the absence of the gap. When it is determined that the device chips C1 to C4 are in contact with the bonding paste CP applied on the electrode pads P1 to P4 of the substrate W, the head vibration unit 5 is operated to apply the bonding paste CP. Spread thinly evenly. It should be noted that the operation of the head vibration unit 5 and the operation timing of the heater unit are appropriately set to ON / OFF timing in accordance with the joining target.
　尚、本発明にかかる自動ボンディング装置１のサイクルタイムは、以下の様に表すことができる。つまり、チップスライダがトレイ側にある状態からヘッド側に移動し再度トレイ側に戻るまでの時間Ｔｅ１、チップ載置台７１にデバイスチップＣ１を移載開始してからデバイスチップＣ４を移載完了するまでの時間Ｔｅ２とすると、これらの時間Ｔｅ１，Ｔｅ２の合計時間Ｔｅが、サイクルタイムとなる。 The cycle time of the automatic bonding apparatus 1 according to the present invention can be expressed as follows. That is, the time Te1 from the state where the chip slider is on the tray side to the head side and returning again to the tray side, from the start of transfer of the device chip C1 to the chip mounting table 71 until the transfer of the device chip C4 is completed. When the time Te2 is set, the total time Te of these times Te1 and Te2 is the cycle time.
　また、チップ載置台７１がトレイ側に移動し、基板載置台２０がヘッド部に向けて移動開始してから接合動作をし、基板排出し、次の基板を受け取り、当該基板にペーストを塗布し、ヘッド部３へ移動開始可能となるまでの時間Ｔｅ３も、サイクルタイムとなる。
そして、上記時間Ｔｅは載置するデバイスチップの数により増減し，上記時間Ｔｅ３はボンディング部ＢＤにおける接合条件や基板載置台２０の移動距離や移動速度により増減するため、自動ボンディング装置１全体のサイクルタイムとしては、上記時間Ｔｅ，Ｔｅ３のいずれか遅い方となる。しかし、接合するデバイスチップの数が増えても、デバイスチップをチップスライダ上に並べる動作と、複数のチップを同時に接合させる動作とを、並行させて行うことができるため、従来方式に比べて、接合に要するサイクルタイムを短縮することができる。 Further, the chip mounting table 71 moves to the tray side, the substrate mounting table 20 starts moving toward the head portion, and then the bonding operation is performed, the substrate is discharged, the next substrate is received, and the paste is applied to the substrate. The time Te3 until the movement to the head unit 3 can be started is also the cycle time.
The time Te is increased / decreased depending on the number of device chips to be mounted, and the time Te3 is increased / decreased depending on the bonding conditions in the bonding part BD, the moving distance and moving speed of the substrate mounting table 20, and therefore the cycle of the entire automatic bonding apparatus 1 The time is the later of the times Te and Te3. However, even if the number of device chips to be bonded increases, the operation of arranging the device chips on the chip slider and the operation of simultaneously bonding a plurality of chips can be performed in parallel. The cycle time required for joining can be shortened.
　さらに、基板Ｗの表面にうねりなどがあり、各電極パッドＰ１～Ｐ４と、その上に接合される各デバイスチップＣ１～Ｃ４との間隔にバラツキがあったとしても、導電用ペーストＣＰが均一に塗り広げられた状態で接合が行われる。そのため、複数チップを同時に接合する際に、複数のデバイスチップと電極パッドとの接合不良を防ぐことができる。そのため、効率よく良品を生産することができる。 Furthermore, even if the surface of the substrate W has undulations and the spacing between the electrode pads P1 to P4 and the device chips C1 to C4 bonded thereon varies, the conductive paste CP is uniform. Joining is performed in a spread state. Therefore, when bonding a plurality of chips simultaneously, it is possible to prevent a bonding failure between the plurality of device chips and the electrode pads. Therefore, good products can be produced efficiently.
　［別の形態］
なお、本発明の適用にあたり、ボンディング部ＢＤは、図３Ａ，３Ｂを用いて上述したようなヘッド昇降機構４及びヘッド加振部５を備えた構成に限定されず、図７Ａ，７Ｂに示すようなヘッド昇降機構４ａ及びヘッド加振部５ａを備えた構成のボンディング部ＢＤ２としても良い。 [Another form]
In applying the present invention, the bonding portion BD is not limited to the configuration including the head elevating mechanism 4 and the head vibration portion 5 as described above with reference to FIGS. 3A and 3B, but as shown in FIGS. 7A and 7B. Alternatively, the bonding unit BD2 may include a head lifting mechanism 4a and a head vibration unit 5a.
　図７Ａ，７Ｂは、本発明を具現化する形態の別の一例の全体を示す概略図である。
なお、図７Ａは、ヘッド部３が上昇した状態を示しており、図７Ｂは、ヘッド部３が下降した状態を示している。 7A and 7B are schematic views showing the whole of another example of a form embodying the present invention.
7A shows a state in which the head unit 3 is raised, and FIG. 7B shows a state in which the head unit 3 is lowered.
　ボンディング部ＢＤ２は、上述のボンディング部ＢＤと共通する構成の基板保持部２，ヘッド部３を備えつつ、異なる構成のヘッド昇降部４ａを備えて構成されている。 The bonding unit BD2 includes a substrate holding unit 2 and a head unit 3 configured in common with the bonding unit BD, and includes a head lifting unit 4a configured differently.
　ヘッド昇降機構４ａは、基板保持部２に対してヘッド部３を上下方向に昇降移動させるものである。ヘッド部３の連結部材３６は、球面軸受Ｓを介して、ヘッド昇降機構４ａの可動側部材であるシャフト４７に取り付けられている。 The head elevating mechanism 4 a moves the head unit 3 up and down with respect to the substrate holding unit 2. The connecting member 36 of the head unit 3 is attached to a shaft 47 which is a movable side member of the head lifting mechanism 4a via a spherical bearing S.
　具体的には、ヘッド昇降機構４ａは、ベースプレート４１に取り付けられた直動シリンダーユニット４０ａにより構成されている。直動シリンダーユニット４０ａは、筐体４６と、シャフト４７と、シャフト４７を出し入れするための加圧流体供給ポート４６ａ，４６ｂを備えて構成されている。筐体４６は、その内部が密閉された中空になっており、加圧流体供給ポート４６ａ，４６ｂに供給される流体の圧力差により、シャフト４７に接続された弁板４８が、筐体４６内で往復動作するように構成されている。 Specifically, the head elevating mechanism 4a is constituted by a linear cylinder unit 40a attached to the base plate 41. The linear cylinder unit 40a includes a housing 46, a shaft 47, and pressurized fluid supply ports 46a and 46b for taking the shaft 47 in and out. The casing 46 is hollow and sealed inside, and a valve plate 48 connected to the shaft 47 is provided in the casing 46 due to a pressure difference between the fluids supplied to the pressurized fluid supply ports 46a and 46b. Is configured to reciprocate.
　より具体的には、直動シリンダーユニット４０ａの加圧流体供給ポート４６ａ側の圧力ｆ１ａが、加圧流体供給ポート４６ｂ側の圧力ｆ１ｂよりも小さくなる（例えば、加圧流体供給ポート４６ａ側を大気解放し、加圧流体供給ポート４６ｂ側に圧縮エアを供給する）状態にすれば、図７Ａに示すように、シャフト４７とヘッド部３が上昇した状態となる。 More specifically, the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a is smaller than the pressure f1b on the pressurized fluid supply port 46b side (for example, the pressurized fluid supply port 46a side is connected to the atmosphere). If released and the compressed air is supplied to the pressurized fluid supply port 46b), the shaft 47 and the head portion 3 are raised as shown in FIG. 7A.
　逆に、直動シリンダーユニット４０ａの加圧流体供給ポート４６ａ側の圧力ｆ１ａが、加圧流体供給ポート４６ｂ側の圧力ｆ１ｂよりも大きくなる（例えば、加圧流体供給ポート４６ａ側に圧縮エアを供給し、加圧流体供給ポート４６ｂ側を大気解放する）状態にすれば、図７Ｂに示すように、シャフト４７とヘッド部３が基板保持部２側に下降した状態となる。 Conversely, the pressure f1a on the pressurized fluid supply port 46a side of the linear cylinder unit 40a becomes larger than the pressure f1b on the pressurized fluid supply port 46b side (for example, compressed air is supplied to the pressurized fluid supply port 46a side). If the pressurized fluid supply port 46b side is released to the atmosphere), the shaft 47 and the head part 3 are lowered to the substrate holding part 2 side as shown in FIG. 7B.
また、ベースプレート４１には、昇降ガイド部４９が備えられており、ヘッド部３の上下動作をスムーズにし、水平方向にぶれが生じないようにしている。昇降ガイド部４９は、シャフト４９ｓとリニアブッシュ４９ｂを含んで構成されている。 In addition, the base plate 41 is provided with an elevating guide part 49 so that the vertical movement of the head part 3 is smoothed and no shaking occurs in the horizontal direction. The raising / lowering guide part 49 is comprised including the shaft 49s and the linear bush 49b.
　ヘッド加振部５ａは、ヘッド部３を基板保持部２側に下降させた状態で、ヘッド昇降機構４ａの昇降動作を繰り返すことにより、ヘッド部３を上下方向に加振するものである。具体的には、ヘッド加振部５ａは、ヘッド昇降機構４ａの直動シリンダーユニット４０ａの往復動作を高速で切り替えることにより具現化できる。 The head vibration unit 5a is configured to vibrate the head unit 3 in the vertical direction by repeating the lifting and lowering operation of the head lifting mechanism 4a with the head unit 3 lowered to the substrate holding unit 2 side. Specifically, the head vibration unit 5a can be realized by switching the reciprocating operation of the linear cylinder unit 40a of the head lifting mechanism 4a at high speed.
　この様な構成では、ヘッド部３とヘッド昇降部４ａとが、球面軸受Ｓを介して連結されている点が好ましい。つまり、球面軸受Ｓではなくナックルジョイントなどを代用した場合、ナックルジョイントの回動部と固定部との間には、回動動作をスムーズにするための隙間が設けられているため、ヘッド加振部４ａで発生させた加振力が遮断若しくは減衰してしまい、加振力を効率よくヘッド部３に伝達することができない。しかし、ヘッド部３とヘッド昇降部４ａとを、球面軸受Ｓを介して連結すれば、球面軸受Ｓには上下方向の隙間が無いため、ヘッド加振部５ａで発生させた加振力を効率よくヘッド部３へ伝達させることができる。つまり、球面軸受Ｓを用いた構成とすれば、迅速に接合用ペーストＣＰを押し広げることができるため、さらにサイクルタイムが短縮できる。 In such a configuration, it is preferable that the head portion 3 and the head lifting / lowering portion 4a are connected via the spherical bearing S. That is, when a knuckle joint or the like is used instead of the spherical bearing S, a gap for smooth rotation operation is provided between the rotating portion and the fixed portion of the knuckle joint. The excitation force generated in the portion 4a is interrupted or attenuated, and the excitation force cannot be efficiently transmitted to the head portion 3. However, if the head unit 3 and the head lifting / lowering unit 4a are connected via the spherical bearing S, the spherical bearing S has no vertical gap, so that the excitation force generated by the head excitation unit 5a is efficiently used. It can be transmitted to the head part 3 well. That is, if the configuration using the spherical bearing S is used, the bonding paste CP can be quickly spread and the cycle time can be further shortened.
　［別の形態］
さらに、ボンディング部ＢＤ２は、ヘッド加圧部６をさらに備えた構成としても良い。 [Another form]
Furthermore, the bonding part BD2 may further include a head pressurizing part 6.
　ヘッド加圧部６は、ヘッド部３を基板保持部２側に向けてさらに加圧するものである。
具体的には、ヘッド加圧部６は、図７Ａ，７Ｂに示すような構成とすることができる。つまり、ヘッド加圧部６は、ヘッド部３に取り付けられた連結部材３３を介して、ヘッド部３を上下方向に移動させるための可動側部材であるシャフト４９ａを、基板保持部２側にさらに押さえつける機構を備えた構成をしている。 The head pressurization unit 6 further pressurizes the head unit 3 toward the substrate holding unit 2 side.
Specifically, the head pressure unit 6 can be configured as shown in FIGS. 7A and 7B. That is, the head pressurizing unit 6 further moves the shaft 49a, which is a movable member for moving the head unit 3 in the vertical direction, to the substrate holding unit 2 side via the connecting member 33 attached to the head unit 3. It has a structure with a pressing mechanism.
　より具体的には、ヘッド加圧部６は、直動シリンダーユニット６０と、押さえ部材６５とを備えて構成されている。直動シリンダーユニット６０は、筐体６１と、シャフト６２と、シャフト６２を出し入れするための加圧流体供給ポート６１ａ，６１ｂを備えて構成されている。筐体６１は、その内部が密閉された中空になっており、加圧流体供給ポート６１ａ，６１ｂに供給される流体の圧力差により、シャフト６２に接続された弁板６３が、筐体６１内で往復動作するように構成されている。 More specifically, the head pressure unit 6 includes a linear cylinder unit 60 and a pressing member 65. The linear cylinder unit 60 includes a housing 61, a shaft 62, and pressurized fluid supply ports 61a and 61b for taking the shaft 62 in and out. The casing 61 is hollow with its inside sealed, and a valve plate 63 connected to the shaft 62 is formed in the casing 61 by the pressure difference between the fluids supplied to the pressurized fluid supply ports 61a and 61b. Is configured to reciprocate.
　シャフト６２の一端は、押さえ部材６５と、ナックルジョイント６７を介して取り付けられている。押さえ部材６５は、直線型若しくは略Ｌ字型（略Ｖ字型を含む）の形状をしており、ナックルジョイント６６を介して、装置フレーム１０の連結部材１１に取り付けられている。 One end of the shaft 62 is attached via a pressing member 65 and a knuckle joint 67. The holding member 65 has a linear shape or a substantially L shape (including a substantially V shape), and is attached to the connecting member 11 of the apparatus frame 10 via a knuckle joint 66.
　このような構成をしているため、押さえ部材６５は、シャフト６２の往復動作に伴い、ナックルジョイント６６の軸部を中心として、先端部６８が上下方向に回動する構成をしている。 Because of such a configuration, the pressing member 65 is configured such that the tip portion 68 rotates in the vertical direction around the shaft portion of the knuckle joint 66 as the shaft 62 reciprocates.
　より具体的には、直動シリンダーユニット６０の加圧流体供給ポート６１ａ側の圧力ｆ２ａが、加圧流体供給ポート６１ｂ側の圧力ｆ２ｂよりも大きくなる（例えば、加圧流体供給ポート６１ａ側に圧縮エアを供給し、加圧流体供給ポート６１ｂ側を大気解放する）状態にすれば、図７Ａに示すように、シャフト６２は矢印６２ｖに示す方向に下がり、押さえ部材６５の先端部６８は、矢印６８ｖに示す方向に上昇した状態となる。この状態では、先端部６８がヘッド３に連結されている連結部材３６と離れており、ヘッド部３を基板保持部２側に押さえつける押し付け力は作用していない。 More specifically, the pressure f2a on the pressurized fluid supply port 61a side of the linear cylinder unit 60 becomes larger than the pressure f2b on the pressurized fluid supply port 61b side (for example, compressed to the pressurized fluid supply port 61a side). When air is supplied and the pressurized fluid supply port 61b side is released to the atmosphere), as shown in FIG. 7A, the shaft 62 is lowered in the direction indicated by the arrow 62v, and the tip portion 68 of the pressing member 65 is It will be in the state raised to the direction shown to 68v. In this state, the distal end portion 68 is separated from the connecting member 36 connected to the head 3, and the pressing force that presses the head portion 3 against the substrate holding portion 2 side does not act.
　逆に、直動シリンダーユニット６０の加圧流体供給ポート６１ａ側の圧力ｆ２ａが、加圧流体供給ポート６２ｂ側の圧力ｆ２ｂよりも小さくなる（例えば、加圧流体供給ポート６１ａ側を大気解放し、加圧流体供給ポート４６ｂ側に圧縮エアを供給する）状態にすれば、図７Ｂに示すように、シャフト６２は矢印６２ｖに示す方向に上がり、押さえ部材６５の先端部６８は、矢印６８ｖに示す方向に下降した状態となる。この状態では、先端部６８がヘッド３に連結されている連結部材３６を押さえ付けており、ヘッド部３を基板保持部２側に押さえつける押し付け力が作用する。 Conversely, the pressure f2a on the pressurized fluid supply port 61a side of the direct acting cylinder unit 60 is smaller than the pressure f2b on the pressurized fluid supply port 62b side (for example, the pressurized fluid supply port 61a side is released to the atmosphere, 7B, the shaft 62 rises in the direction indicated by the arrow 62v, and the distal end portion 68 of the pressing member 65 is indicated by the arrow 68v. It will be in a state of descending in the direction. In this state, the distal end portion 68 presses the connecting member 36 connected to the head 3, and a pressing force that presses the head portion 3 against the substrate holding portion 2 side acts.
　このような構成をしているため、ヘッド加圧部６を備えたボンディング装置は、ヘッド昇降部の下降動作とヘッド加振部の加振により接合用ペーストＣＰが押し広げられた後、デバイスチップＣ１～Ｃ４と電極パッドＰ１～Ｐ４との間隔を維持することができる。さらには、デバイスチップＣ１～Ｃ４を基板Ｗ側にさらに押し込んで、僅かながら電極パッドＰ１～Ｐ４との間隔を近づけることができる。そして、この様な加圧部６を用いた構成のボンディング装置は、加圧部を備えない場合と比較して、より迅速にペーストを押し広げることができるため、さらにサイクルタイムを短縮することができる。 Due to such a configuration, the bonding apparatus including the head pressurizing unit 6 has the device chip after the bonding paste CP is pushed and expanded by the head lifting / lowering operation and the head vibrating unit. The distance between C1 to C4 and the electrode pads P1 to P4 can be maintained. Furthermore, the device chips C1 to C4 can be further pushed into the substrate W side to slightly close the distance from the electrode pads P1 to P4. And since the bonding apparatus of the structure using such a pressurizing part 6 can spread a paste more rapidly compared with the case where a pressurizing part is not provided, cycle time can be further shortened. it can.
　このとき、ヘッド加圧部６は、押さえ部材６５の先端部６８が連結部材３６に接する点を押し込み力の作用点とし、連結部材３６上の当該作用点には、ヘッド部３を基板保持部２に向けて押し付ける力がはたらく構成をしている。そのため、ヘッド加圧部３でヘッド部３を押し込む力を大きく設定しても、ヘッド昇降部４の上下動作に頼らずに加圧することができる。そうすることで、ヘッド昇降部４のみにより加圧力を付与した場合に生じる様な、Ｘ軸スライダー１５やヘッド昇降機構４の直動ガイド部分に余分なストレスが加わることを防ぐことができる。 At this time, the head pressure unit 6 uses the point where the tip 68 of the pressing member 65 contacts the connecting member 36 as an action point of the pressing force, and the head part 3 is placed on the substrate holding part at the action point on the connecting member 36. The structure is such that the force pressing toward 2 works. For this reason, even if the force for pushing the head unit 3 by the head pressurizing unit 3 is set large, the pressure can be applied without depending on the vertical movement of the head elevating unit 4. By doing so, it is possible to prevent extra stress from being applied to the X-axis slider 15 and the linear motion guide portion of the head elevating mechanism 4 as occurs when the pressure is applied only by the head elevating unit 4.
　そのため、基板保持部２とヘッド部３の平行度を維持した状態で、デバイスチップと電極パッドを接合するためにデバイスチップＣ１～Ｃ４を加熱し、接合用ペーストＣＰの溶剤が揮発して体積減少しても、接触面積全面に接合用ペーストＣＰが行き渡った状態で接合を終えることができる。 Therefore, the device chips C1 to C4 are heated to bond the device chip and the electrode pad while maintaining the parallelism of the substrate holding unit 2 and the head unit 3, and the solvent of the bonding paste CP volatilizes to reduce the volume. Even in this case, the bonding can be completed in a state where the bonding paste CP is spread over the entire contact area.
　また、この様な加圧部６を備えた構成においても、ヘッド部３とヘッド昇降部４ａとが、球面軸受Ｓを介して連結されていることが好ましく、上述と同様に、さらなるサイクルタイムの短縮につながる。 Also in the configuration including such a pressure unit 6, it is preferable that the head unit 3 and the head elevating unit 4a are connected via the spherical bearing S. It leads to shortening.
　［別の形態］
　なお、本発明に係るボンディング装置は、塗布ペースト高さ測定部ＰＨと、塗布ペースト高さ検査部とを備えた構成としても良い。
塗布ペースト高さ測定部ＰＨは、基板Ｗの表面に設けられた複数の電極パッドＰ１～Ｐ４の上に接合用ペーストＣＰが塗布された状態で、これら塗布された接合用ペーストＣＰの高さを測定するものである。
塗布ペースト高さ検査部は、これら塗布された接合用ペーストＣＰの塗布高さが適性範囲内かどうかを検査するものである。 [Another form]
Note that the bonding apparatus according to the present invention may be configured to include a coating paste height measuring unit PH and a coating paste height inspection unit.
The applied paste height measuring unit PH measures the height of the applied bonding paste CP in a state where the bonding paste CP is applied on the plurality of electrode pads P1 to P4 provided on the surface of the substrate W. Measure.
The application paste height inspection unit inspects whether the application height of the applied bonding paste CP is within an appropriate range.
　具体的には、塗布ペースト高さ測定部ＰＨは、レーザ変位計などの物体の凹凸や表面形状、段差を測定する機器を用いて構成されており、電極パッドＰ１～Ｐ４上に接合用ペーストＣＰが塗布された部分の上面、電極パット部の接合用ペーストが塗布されていない部分、その他基板Ｗの表面各部について、ある基準面からの距離（つまり高さ）情報を取得することできる。そして、塗布ペースト高さ測定部ＰＨは、図１において破線で示す様に、基板保持部２がペースト塗布部ＰＰの下方にある位置から、ボンディング部ＢＤのヘッド部３の下方にある位置へ移動する経路の途中に配置されている。そのため、塗布ペースト高さ測定部ＰＨは、基板表面と電極パッドＰ１～Ｐ４上に接合用ペーストＣＰが塗布された部分の上面との相対的な距離情報の差分から、塗布された接合用ペーストＣＰの厚みが測定できる。そして、塗布ペースト高さ測定部ＰＨで測定された接合用ペーストＣＰの塗布厚みや、塗布ペースト高さ検査部での判定結果を、統括制御部ＭＣへ出力する構成としておく。 Specifically, the coating paste height measuring unit PH is configured by using a device for measuring the unevenness, surface shape, and level difference of an object such as a laser displacement meter, and the bonding paste CP on the electrode pads P1 to P4. The distance (that is, height) information from a certain reference surface can be acquired for the upper surface of the portion where the coating is applied, the portion where the bonding paste of the electrode pad portion is not applied, and other portions of the surface of the substrate W. Then, as shown by a broken line in FIG. 1, the coating paste height measurement unit PH moves from a position where the substrate holding unit 2 is below the paste coating unit PP to a position below the head unit 3 of the bonding unit BD. It is placed in the middle of the route. Therefore, the applied paste height measuring unit PH determines the applied bonding paste CP from the difference in relative distance information between the substrate surface and the upper surface of the portion where the bonding paste CP is applied on the electrode pads P1 to P4. Can be measured. Then, the coating thickness of the bonding paste CP measured by the coating paste height measuring unit PH and the determination result by the coating paste height inspection unit are output to the overall control unit MC.
　このような構成をしているので、塗布ペースト高さ測定部ＰＨと、塗布ペースト高さ検査部とを備えたボンディング装置は、接合用ペーストＣＰの塗布厚みを測定し、ヘッド部３でデバイスチップＣ１～Ｃ４を貼り合わせる前の段階で、接合用ペーストＣＰの塗布厚みの不適切に起因する接合不良が発生するおそれのある基板を発見（つまり、不良判定）することができる。そのため、このような不良判定された基板は、デバイスチップを接合することなく、下流工程へ流したり、後述するように排出したりすることが好ましい。そうすることにより、不必要な接合動作を省けるので、サイクルタイムの短縮ができる。 Because of such a configuration, the bonding apparatus including the coating paste height measuring unit PH and the coating paste height inspection unit measures the coating thickness of the bonding paste CP, and the head unit 3 uses the device chip. Before bonding C1 to C4, it is possible to find a substrate that may cause a bonding failure due to an inappropriate application thickness of the bonding paste CP (that is, determine a defect). Therefore, it is preferable that the substrate determined to be defective is flowed to a downstream process or discharged as described later without bonding the device chip. By doing so, unnecessary joining operations can be omitted, and cycle time can be shortened.
　なお、このような塗布ペースト高さの検査をする場合、不良基板排出部を備えた構成とすることが好ましい。不良基板排出部は、ペースト高さ検査部で不良判定された基板を排出するものである。 In addition, when inspecting such a coating paste height, it is preferable to have a configuration including a defective substrate discharge portion. The defective substrate discharge unit discharges the substrate that has been determined to be defective by the paste height inspection unit.
　具体的には、不良基板排出部は、基板供給部ＷＳの移載ロボットＷＳ１に不良基板を排出する機能を持たせ、図１において破線で示すように、不良基板を収容するカセットがセットされた不良基板カセット部ＷＸ１を備えた構成としておく。そして、破線で示す矢印Ｖ８の方向へ基板を搬送し、排出する。或いは、不良基板排出部は、基板排出部ＷＥの移載ロボットＷＥ１に不良基板を排出する機能を持たせ、図１において破線で示すように、不良基板を収容するカセットがセットされた不良基板カセット部ＷＸ２を備えた構成としても良い。そして、破線で示す矢印Ｖ９の方向へ基板を搬送し、排出する。或いは、不良基板排出部は、基板排出部ＷＥを構成する移載ロボットＷＥ１と同様の移載ロボット（図示せず）と、不良基板を収容するカセットがセットされた不良基板カセット部（図示せず）を、基板受取位置ＰＯ１や基板受渡位置ＰＯ２やその他基板の排出に適した位置に隣接させて、別途配置した構成としても良い。 Specifically, the defective substrate discharge unit has a function of discharging the defective substrate to the transfer robot WS1 of the substrate supply unit WS, and a cassette for storing the defective substrate is set as indicated by a broken line in FIG. The configuration includes a defective substrate cassette unit WX1. And a board | substrate is conveyed in the direction of arrow V8 shown with a broken line, and is discharged | emitted. Alternatively, the defective substrate discharge unit gives the transfer robot WE1 of the substrate discharge unit WE a function of discharging the defective substrate, and as shown by a broken line in FIG. 1, a defective substrate cassette in which a cassette for storing the defective substrate is set. It is good also as a structure provided with the part WX2. And a board | substrate is conveyed in the direction of arrow V9 shown with a broken line, and is discharged | emitted. Alternatively, the defective substrate discharge unit is a defective substrate cassette unit (not shown) in which a transfer robot (not shown) similar to the transfer robot WE1 constituting the substrate discharge unit WE and a cassette for storing defective substrates are set. ) May be separately arranged adjacent to the substrate receiving position PO1, the substrate delivery position PO2, and other positions suitable for discharging the substrate.
　そして、不良基板排出部は、統括制御部ＭＣからの制御指令に基づいて、不良基板を排出する動作を行う。そうすることにより、不良基板を一連のボンディング工程から早期段階で排出し、下流の工程に受け渡ししなくて済むため、さらなるサイクルタイムの短縮ができる。 The defective substrate discharge unit performs an operation of discharging the defective substrate based on a control command from the overall control unit MC. By doing so, it is not necessary to discharge the defective substrate from the series of bonding processes at an early stage and transfer it to the downstream process, so that the cycle time can be further reduced.
　［別の形態］
　なお、本発明に係るボンディング装置は、塗布ペースト高さ測定部ＰＨと、塗布ペースト高さ履歴記憶部と、ペースト塗布量フィードバック部とを備えた構成のボンディング装置としても良い。 [Another form]
The bonding apparatus according to the present invention may be a bonding apparatus having a configuration including a coating paste height measuring unit PH, a coating paste height history storage unit, and a paste coating amount feedback unit.
　塗布ペースト高さ測定部は、基板Ｗの表面に設けられた複数の電極パッドＰ１～Ｐ４の上に接合用ペーストＣＰが塗布された状態で、これら塗布された接合用ペーストＣＰの高さを測定するものである。
塗布ペースト高さ履歴記憶部は、これら塗布された接合用ペーストＣＰの塗布高さの履歴を記憶するものである。つまり、接合用ペーストＣＰの塗布高さの経時変化が記憶される。
ペースト塗布量フィードバック部は、塗布されたペースト高さの履歴に基づいて次に塗布するペースト塗布量を決定するものである。つまり、接合用ペーストＣＰの塗布高さの経時変化に基づいて、塗布量を増やすべきか、減らすべきか、維持すべきかを判定し、次に塗布するペーストの塗布量を決定する。 The coating paste height measuring unit measures the height of the applied bonding paste CP in a state where the bonding paste CP is applied on the plurality of electrode pads P1 to P4 provided on the surface of the substrate W. To do.
The application paste height history storage unit stores the application height history of the applied bonding paste CP. That is, the change with time of the application height of the bonding paste CP is stored.
The paste application amount feedback unit determines the paste application amount to be applied next based on the history of the applied paste height. That is, based on the change over time of the application height of the bonding paste CP, it is determined whether the application amount should be increased, reduced, or maintained, and the application amount of the paste to be applied next is determined.
　このような構成をしているので、上記のボンディング装置は、塗布するペーストの塗布量を適性範囲に保ち、接合用ペーストＣＰの塗布厚みの不適切に起因する接合不良が発生することを防ぐことができる。そのため、投入基板枚数に対する完成品の排出枚数を鑑みれば、不良品が減少し、良品が増加する。そのため、効率よく良品を生産することができる。 Because of such a configuration, the above-described bonding apparatus keeps the amount of paste to be applied within an appropriate range and prevents the occurrence of bonding failure due to inappropriate application thickness of the bonding paste CP. Can do. Therefore, in view of the number of discharged finished products with respect to the number of input substrates, the number of defective products decreases and the number of non-defective products increases. Therefore, good products can be produced efficiently.
　［別の形態］
　なお、本発明に係るボンディング装置は、接合領域観察部８と、ペースト状態検査部９と、不良基板排出部とを備えた構成のボンディング装置としても良い。
接合領域観察部８は、電極パッドＰ１～Ｐ４の上に接合されるデバイスチップＣ１～Ｃ４の周辺部を少なくとも含む領域を観察するものである。具体的には、接合領域観察部８は、電極パッドＰ１～Ｐ４が透明体であれば接合用ペーストＣＰの外縁部より内側の領域を含むように観察し、電極パッドＰ１～Ｐ４が金属などの非透明体であれば電極パッドＰ１～Ｐ４の周辺部より外側であって、ここ周辺部から外側にはみ出した接合用ペーストＣＰの外縁部より内側の領域を少なくとも含むように観察する。 [Another form]
Note that the bonding apparatus according to the present invention may be a bonding apparatus having a configuration including a bonding region observation unit 8, a paste state inspection unit 9, and a defective substrate discharge unit.
The bonding region observation unit 8 is for observing a region including at least the peripheral portion of the device chips C1 to C4 bonded onto the electrode pads P1 to P4. Specifically, if the electrode pads P1 to P4 are transparent, the bonding region observation unit 8 observes so as to include a region inside the outer edge of the bonding paste CP, and the electrode pads P1 to P4 are made of metal or the like. In the case of a non-transparent material, observation is made so as to include at least a region outside the peripheral portion of the electrode pads P1 to P4 and inside the outer edge portion of the bonding paste CP that protrudes outward from the peripheral portion.
　より具体的には、接合領域観察部８は、図５に示した様なエリアセンサーカメラ２４Ｃと、撮像用レンズ２４Ｌとを組み合わせてた構成とし、各電極パッドＰ１～Ｐ４とその周辺部及びその外側の領域を一度に観察できる画角に設定しておくことができる。 More specifically, the bonding region observation unit 8 is configured by combining the area sensor camera 24C and the imaging lens 24L as shown in FIG. 5, and each electrode pad P1 to P4, its peripheral portion, and its The angle of view can be set so that the outer region can be observed at once.
　そうすれば、接合領域観察部８は、基板保持部２の支持部材２１を挟むように、ヘッド部３と対向配置される。そして、エリアセンサーカメラ２４Ｃは、支持部材２１の上に配置された基板Ｗの電極パッドＰ１～Ｐ４やその上に塗布された接合用ペーストＣＰ並びに、その上に密着している各デバイスチップＣ１～Ｃ４の周囲に焦点を合わせて、これらを観察するように配置しておく。そのため、エリアセンサーカメラ２４Ｃを用いて、一点鎖線８３で表した画角の内側の領域を観察することができる。 Then, the bonding region observation unit 8 is disposed to face the head unit 3 so as to sandwich the support member 21 of the substrate holding unit 2. Then, the area sensor camera 24C includes the electrode pads P1 to P4 of the substrate W disposed on the support member 21, the bonding paste CP applied thereon, and the device chips C1 to C1 that are in close contact therewith. Focusing around C4, it arranges so that these may be observed. Therefore, the area inside the angle of view represented by the alternate long and short dash line 83 can be observed using the area sensor camera 24C.
　ペースト状態検査部９は、デバイスチップＣ１～Ｃ４が、正常に接合されたかどうかについて接合中若しくは接合後のペーストの状態を観察して検査を行うものである。 The paste state inspection unit 9 inspects whether the device chips C1 to C4 are normally joined by observing the paste state during or after joining.
　具体的には、ペースト状態検査部９は、接合領域観察部８で観察した画像に対応した画像信号に基づいて、複数のデバイスチップＣ１～Ｃ４と接する接合用ペーストＣＰの状態を検査するものである。ここで言う、接合用ペーストＣＰの状態とは、接合用ペーストＣＰの、はみ出し状態や硬化反応状態を言う。つまり、複数のデバイスチップＣ１～Ｃ４を各電極パッドＰ１～Ｐ４に加圧・加熱して接合する際に、接合用ペーストＣＰが、各デバイスチップＣ１～Ｃ４の周囲にはみ出しているかどうか、各電極パッドＰ１～Ｐ４からはみ出しているかどうか、これら接合用ペーストＣＰのはみ出し寸法がどの程度かという、はみ出し状態を検査する。或いは、接合用ペーストＣＰの変色具合を見て、所定の接合強度を発揮しうる状態になっているかどうかという、ペーストの硬化反応状態を検査する。 Specifically, the paste state inspection unit 9 inspects the state of the bonding paste CP in contact with the plurality of device chips C1 to C4 based on the image signal corresponding to the image observed by the bonding region observation unit 8. is there. Here, the state of the bonding paste CP refers to a protruding state or a curing reaction state of the bonding paste CP. That is, when the plurality of device chips C1 to C4 are bonded to the electrode pads P1 to P4 by pressing and heating, whether or not the bonding paste CP protrudes around the device chips C1 to C4, The protruding state of whether or not the pads P1 to P4 are protruding and the protruding dimension of the bonding paste CP is inspected. Alternatively, the state of discoloration of the bonding paste CP is examined, and the paste curing reaction state is checked to determine whether or not a predetermined bonding strength can be exhibited.
　より具体的には、ペースト状態検査部９は、画像処理装置９１と、その中に組み込まれた画像処理プログラムによって構成することができる。そして、画像処理装置９１は、画像処理ユニットと呼ばれる機器や、パソコンや制御機器に組み込まれた画像処理ボードなどを用いて構成することができ、取得した画像情報と、予め組み込まれた画像処理プログラムやパラメータ等に基づいて、所定の演算処理を行うことができる。 More specifically, the paste state inspection unit 9 can be configured by an image processing device 91 and an image processing program incorporated therein. The image processing apparatus 91 can be configured using a device called an image processing unit, an image processing board incorporated in a personal computer or a control device, and the acquired image information and an image processing program incorporated in advance. Based on the parameters and the like, a predetermined calculation process can be performed.
　画像処理装置９１は、画像信号取得部９３を備えている。画像信号取得部９３は、接合領域観察部８から出力された画像信号を取得するものである。画像処理装置９１は、画像信号取得部９３で取得した画像信号を復元化処理し、接合領域観察部８で観察した画像を復元する。さらに、画像処理装置９１は、予め組み込まれた画像処理プログラムやパラメータ等に基づいて、後述のような種々のペースト状態検査を行うことができる。 The image processing apparatus 91 includes an image signal acquisition unit 93. The image signal acquisition unit 93 acquires the image signal output from the bonding region observation unit 8. The image processing device 91 restores the image signal acquired by the image signal acquisition unit 93 and restores the image observed by the joint region observation unit 8. Furthermore, the image processing apparatus 91 can perform various paste state inspections as described below based on an image processing program, parameters, and the like incorporated in advance.
　不良基板排出部は、ペースト状態検査部で接合不良と判定された基板を排出するものである。具体的には、ペースト状態検査部で接合不良と判定された基板を排出する不良基板排出部は、上述したペースト高さ検査部で不良判定された基板を排出するための不良基板排出部と同様の構成とし、当該構成で兼用したり併用することができる。 The defective substrate discharge unit discharges a substrate that is determined as a bonding failure by the paste state inspection unit. Specifically, the defective substrate discharge unit that discharges the substrate determined to be defective by the paste state inspection unit is the same as the defective substrate discharge unit for discharging the substrate determined to be defective by the paste height inspection unit described above. And can be used in combination or in combination.
　以下に、本発明に係るペースト状態検査部について、詳細を述べる。ペースト状態検査部９は、画像処理装置９１に組み込まれた画像処理プログラムが、下記の検査を実施するようにしておく。 Details of the paste state inspection unit according to the present invention will be described below. The paste state inspection unit 9 causes the image processing program incorporated in the image processing apparatus 91 to perform the following inspection.
　（１）ペーストのはみ出し寸法の検査
これは、電極パッドＰ１～Ｐ４の外側に接合用ペーストＣＰがどの程度はみ出しているか、はみ出し寸法を検査するものである。基板Ｗを透明体としておけば、このような検査ができる。 (1) Inspection of paste protrusion size This is to check how much the paste paste for bonding CP protrudes outside the electrode pads P1 to P4. If the substrate W is a transparent body, such an inspection can be performed.
　図８は、本発明を具現化する形態の要部を示す画像図であり、接合領域観察部８で基板Ｗを下面側から上方に見上げた画像イメージが示されている。
例えば、ペースト状態検査部８は、図８に示すように、電極パッドＰ１からはみ出した接合用ペーストＣＰのはみだし寸法ｄ１～ｄ８を測定する。ここで、はみ出し寸法ｄ１～ｄ８は、デバイスチップＣ１～Ｃ４の各辺の周辺部からはみ出した寸法を意味する。ここでは、説明を簡単に行うため、はみ出し寸法を測定する箇所は、角部や稜部について計８カ所に設定しているが、さらに細分化して設定しても良い。なお、他の電極パッドＰ２～Ｐ４についても、上述と同様に接合用ペーストＣＰのはみだし寸法を測定する。 FIG. 8 is an image view showing the main part of the embodiment embodying the present invention, and shows an image image in which the bonding area observation unit 8 looks up the substrate W from the lower surface side.
For example, as shown in FIG. 8, the paste state inspection unit 8 measures the protruding dimensions d1 to d8 of the bonding paste CP protruding from the electrode pad P1. Here, the protruding dimensions d1 to d8 mean dimensions protruding from the peripheral portions of the respective sides of the device chips C1 to C4. Here, in order to simplify the explanation, there are a total of 8 locations for measuring the protruding dimensions for the corners and ridges, but they may be further subdivided. For the other electrode pads P2 to P4, the protruding dimension of the bonding paste CP is measured in the same manner as described above.
　このように、電極パッドＰ１～Ｐ４からはみ出した接合用ペーストＣＰのはみだし寸法を測定し、チップ接合の際に接合不良が生じていないかどうかを検査することができる。 As described above, it is possible to measure whether the bonding paste CP protruding from the electrode pads P1 to P4 protrudes and to check whether or not a bonding failure has occurred during chip bonding.
　（２）ペーストの硬化反応状態の検査
これは、電極パッドＰ１～Ｐ４とデバイスチップＣ１～Ｃ４とを接合する接合用ペーストＣＰの色や濃淡度合いから、硬化反応がどの程度進んでいるかを検査するものである。基板Ｗを透明体とし、電極パッドＰ１～Ｐ４からはみ出した接合用ペーストＣＰを観察する。接合用ペーストＣＰが、銀ナノ粒子とバインダーで構成されている場合、加熱硬化前は黒っぽい灰色をしているが、加熱が進み硬化すれば白っぽい灰色若しくは白色に変化する。そのため、電極パッドＰ１～Ｐ４からはみ出した接合用ペーストＣＰについて、色や濃淡の度合いと硬化状態とを予め紐付けしておき、加熱硬化中に観察した画像を取得し、画像処理してどの程度硬化が進んでいるかを判定し、ペーストの硬化反応状態を検査する。或いは、基板Ｗを透明体、電極パッドＰ１～Ｐ４を透明電極で構成し、接合用ペーストＣＰ全体を基板Ｗ越しに観察して、硬化反応状態を検査する。 (2) Inspection of the curing reaction state of the paste This is to inspect how much the curing reaction has progressed from the color and shade of the bonding paste CP for bonding the electrode pads P1 to P4 and the device chips C1 to C4. Is. The bonding paste CP protruding from the electrode pads P1 to P4 is observed using the substrate W as a transparent body. When the bonding paste CP is composed of silver nanoparticles and a binder, it has a dark gray color before heat-curing, but changes to a whitish gray color or white color when heated and cured. For this reason, the bonding paste CP that protrudes from the electrode pads P1 to P4 is previously associated with the color, the degree of shading, and the cured state, and an image observed during heat-curing is acquired and subjected to image processing. It is determined whether the curing has progressed, and the curing reaction state of the paste is inspected. Alternatively, the substrate W is made of a transparent material and the electrode pads P1 to P4 are made of transparent electrodes, and the entire bonding paste CP is observed through the substrate W to inspect the curing reaction state.
　図９は、本発明に用いられる接合用ペーストの接合強度と観察輝度を示す特性図であり、接合用ペーストＣＰの硬化反応状態の変化と、それに対応する観察輝度の変化の様子が例示されている。図９は、横軸に加熱時間、縦軸に接合用ペーストＣＰの接合強度と観察輝度を示したものである。ここに例示する接合用ペーストＣＰは、加熱が進むとバインダー成分が揮発し、金属粒子同士が結合することで徐々に接合強度が増す。このとき、接合用ペーストＣＰは、デバイスチップの接合に必要な接合強度Ｔａになると観察輝度が６０％となり、さらに接合強度Ｔｂとなると観察輝度が８０％となる。そして、さらに加熱を続けると少し強度が増すが、加熱しすぎると接合強度が低下してしまう。 FIG. 9 is a characteristic diagram showing the bonding strength and the observation luminance of the bonding paste used in the present invention, illustrating the change in the curing reaction state of the bonding paste CP and the corresponding change in the observation luminance. Yes. FIG. 9 shows the heating time on the horizontal axis and the bonding strength and observation luminance of the bonding paste CP on the vertical axis. In the bonding paste CP exemplified here, the binder component volatilizes as the heating proceeds, and the bonding strength gradually increases as the metal particles are bonded to each other. At this time, the bonding paste CP has an observation luminance of 60% when the bonding strength Ta is necessary for bonding the device chips, and further has an observation luminance of 80% when the bonding strength Tb is reached. If the heating is further continued, the strength is slightly increased. However, if the heating is excessive, the bonding strength is lowered.
　このように、接合用ペーストＣＰについて、予め硬化反応に関する特性を把握しておき、観察輝度を測定することで、接合強度を検査することができる。つまり、ペースト状態検査部９は、接合用ペーストＣＰの反応状態を検査することができる。 As described above, the bonding strength of the bonding paste CP can be inspected in advance, and the bonding strength can be inspected by measuring the observation luminance. That is, the paste state inspection unit 9 can inspect the reaction state of the bonding paste CP.
　（３）その他のペースト状態の検査
ペースト状態検査部９は、上述の検査項目に限らず、接合用ペーストＣＰを加圧・加振・加熱中に気泡が発生したり混入したりしないかどうかを検査しても良い。この場合、基板Ｗを透明体とし、電極パッドＰ１～Ｐ４を透明電極で構成しておく。 (3) Other paste state inspections The paste state inspection unit 9 is not limited to the above-described inspection items, and whether or not bubbles are generated or mixed during the pressurization / vibration / heating of the bonding paste CP. You may inspect. In this case, the substrate W is a transparent body, and the electrode pads P1 to P4 are made of transparent electrodes.
　本発明に係るボンディング装置は、上述したペーストの硬化反応状態の検査に際し、硬化反応状態許容範囲設定部を備え、ペースト状態検査部９には、接合用ペーストＣＰの硬化反応状態が、硬化反応状態の許容範囲の範囲内であるかどうかを検査する構成としても良い。硬化反応状態許容範囲設定部は、接合用ペーストＣＰの硬化反応状態について、硬化反応状態の許容範囲を設定するものである。 The bonding apparatus according to the present invention includes a curing reaction state allowable range setting unit in the above-described inspection of the curing reaction state of the paste. In the paste state inspection unit 9, the curing reaction state of the bonding paste CP is the curing reaction state. It is good also as a structure which test | inspects whether it is in the tolerance | permissible_range of this. The curing reaction state allowable range setting unit sets the allowable range of the curing reaction state for the curing reaction state of the bonding paste CP.
　具体的には、図９で示した様に、接合用ペーストＣＰの接合強度Ｔａ，Ｔｂに対応する観察輝度６０％～８０％を、硬化反応状態の許容範囲として設定しておく。 Specifically, as shown in FIG. 9, the observation luminance of 60% to 80% corresponding to the bonding strengths Ta and Tb of the bonding paste CP is set as the allowable range of the curing reaction state.
　このようにすれば、接合用ペーストＣＰが所定の接合強度（つまり、Ｔａ～Ｔｂの範囲内）に確保されているかどうかを判別して検査することができる。 In this way, it is possible to determine and inspect whether or not the bonding paste CP is secured at a predetermined bonding strength (that is, within a range of Ta to Tb).
　さらに本発明に係るボンディング装置は、上述のペーストの硬化反応状態の検査について硬化反応状態の許容範囲を設定した場合、ペースト状態検査部９は、検査結果が異常であれば外部へ通知する構成としても良い。この場合、ペースト状態検査部９は、電極パッドＰ１～Ｐ４のそれぞれについて、接合用ペーストＣＰの硬化反応状態を測定し、そのうち少なくとも１つについて硬化反応状態の許容範囲の範囲外であれば、当該検査した接合用ペーストの硬化反応状態が異常であることを通知する。 Furthermore, when the bonding apparatus according to the present invention sets the allowable range of the curing reaction state for the above-described inspection of the curing reaction state of the paste, the paste state inspection unit 9 notifies the outside if the inspection result is abnormal. Also good. In this case, the paste state inspection unit 9 measures the curing reaction state of the bonding paste CP for each of the electrode pads P1 to P4, and if at least one of them is outside the allowable range of the curing reaction state, Notify that the curing reaction state of the inspected bonding paste is abnormal.
　具体的には、接合用ペーストの接合強度の許容範囲をＴａ～Ｔｂ（つまり、観察輝度を６０～８０％）と設定している場合であれば、電極パッドＰ１～Ｐ４の接合用ペーストＣＰのうち、いずれかの観察輝度が８０％を超えれば、或いは、いずれかの観察輝度が６０％に満たなければ、接合用ペーストＣＰの反応状態が異常であると外部へ通知する。この異常通知は、統括制御部ＭＣに対する接続された信号レベルの変化による通知や、ランプやブザーなどによる作業者への視覚的・聴覚的な通知を意味する。 Specifically, if the allowable range of the bonding strength of the bonding paste is set to Ta to Tb (that is, the observation luminance is 60 to 80%), the bonding paste CP of the electrode pads P1 to P4 Among these, if any observation luminance exceeds 80% or any observation luminance is less than 60%, the outside is notified that the reaction state of the bonding paste CP is abnormal. This abnormality notification means notification due to a change in the signal level connected to the overall control unit MC, and visual / audible notification to the worker by a lamp, a buzzer, or the like.
　このような異常通知を行うことで、統括制御部ＭＣに予め登録しておいた異常処理を自動的に実行したり、作業者に接合不良が生じていることを知らせたり、下流装置へ接合不良が生じていることを知らせることができる。 By performing such an abnormality notification, the abnormality processing registered in advance in the overall control unit MC is automatically executed, the operator is informed that a bonding failure has occurred, or the downstream device has a bonding failure. Can be informed.
　このように、ペースト状態検査部９でのペーストの反応状態の検査結果に基づいて、ボンディングを中止すれば、それ以降に無用な加熱動作を続行する必要がなくなり、サイクルタイムを短縮できる。また、不良基板を適宜排出することで、接合不良の発生を未然に防ぎ、効率よく良品を生産することができる。 Thus, if the bonding is stopped based on the inspection result of the paste reaction state in the paste state inspection unit 9, it is not necessary to continue the unnecessary heating operation after that, and the cycle time can be shortened. Further, by properly discharging the defective substrate, it is possible to prevent the occurrence of defective bonding and to produce a good product efficiently.
　［別の形態］
　なお、本発明に係るボンディング装置は、接合時ヘッド高さ検出部と、接合時ヘッド高さ許容範囲登録部と、接合時ヘッド高さ良否判定部とを備えた構成のボンディング装置としても良い。 [Another form]
The bonding apparatus according to the present invention may be a bonding apparatus having a bonding head height detection unit, a bonding head height tolerance registration unit, and a bonding head height quality determination unit.
　接合時ヘッド高さ検出部は、接合完了時のヘッド高さを検出するものである。具体的には、接合時ヘッド高さ検出部は、ヘッド部３の位置を検出できるもので構成しておく。より具体的には、ヘッド部３の連結部材やヘッド昇降機構４のＺ軸スライダー４３のいずれかに備えられたリニアエンコーダ（つまり、Ｚ軸方向の移動量や位置を検出するもの）や、Ｚ軸スライダー４３を駆動するための回転モータ４５に備えられたロータリエンコーダ（つまり、回転角度や回転量を検出するもの）の他、ヘッド部３のチップ保持部３１の下面位置を検出する変位センサなどが例示できる。 接合 Head height detection unit at the time of joining detects the head height at the time of joining completion. Specifically, the joining head height detection unit is configured to detect the position of the head unit 3. More specifically, a linear encoder (that is, one that detects the amount of movement or position in the Z-axis direction) provided on either the connecting member of the head unit 3 or the Z-axis slider 43 of the head lifting mechanism 4, In addition to a rotary encoder (that is, one that detects a rotation angle and a rotation amount) provided in a rotary motor 45 for driving the shaft slider 43, a displacement sensor that detects a lower surface position of the chip holding unit 31 of the head unit 3 and the like Can be illustrated.
　接合時ヘッド高さ許容範囲登録部は、接合完了時のヘッド高さの許容範囲を登録するものである。接合時ヘッド高さ良否判定部は、接合完了時のヘッド高さが許容範囲内かどうかを判定するものである。具体的には、接合時ヘッド高さ許容範囲登録部と、接合時ヘッド高さ良否判定部とは、上述した画像処理装置９１とその実行プログラムにより構成しておく。 The bonding head height tolerance registration unit registers the tolerance range of the head height at the completion of joining. The joining head height quality judgment unit judges whether or not the head height at the completion of joining is within an allowable range. Specifically, the joining head height allowable range registration unit and the joining head height pass / fail judgment unit are configured by the above-described image processing device 91 and its execution program.
　このような構成をしているので、上記のボンディング装置は、デバイスチップを接合後に、予め規定しておいた接合条件で接合が行われたかどうかを判定し、接合不良のおそれがある基板を発見（つまり、不良判定）することができる。そのため、このような不良判定された基板は、不良判定情報を付加して下流工程へ流したり、後述するように排出したりすることができる。 Because of this configuration, the above bonding apparatus determines whether or not bonding has been performed under the bonding conditions defined in advance after bonding the device chip, and finds a substrate that may have a bonding failure. (That is, a failure determination). For this reason, the board determined to be defective can be added with the defect determination information to flow to a downstream process, or can be discharged as described later.
　なお、このような接合完了時塗布ペースト高さの検査をする場合、不良基板排出部を備えた構成とすることが好ましい。不良基板排出部は、接合時ヘッド高さ良否判定部で不良判定された基板を排出するものである。 In addition, when inspecting the coating paste height at the completion of such bonding, it is preferable to have a configuration including a defective substrate discharge portion. The defective substrate discharge unit discharges the substrate that has been determined to be defective by the bonding head height determination unit.
　具体的には、接合時ヘッド高さ良否判定部で不良判定された基板を排出する不良基板排出部は、上述したペースト高さ検査部で不良判定された基板を排出するための不良基板排出部と同様の構成とし、当該構成で兼用したり併用することができる。 Specifically, the defective substrate discharge unit for discharging the substrate determined to be defective by the bonding head height quality determination unit is a defective substrate discharge unit for discharging the substrate determined to be defective by the paste height inspection unit described above. The configuration is the same as that described above, and the configuration can be combined or used together.
　そうすることにより、不良基板を一連のボンディング工程から排出し、下流の工程に受け渡ししなくて済むため、さらなるサイクルタイムの短縮ができ、効率よく良品を生産することができる。 By doing so, it is not necessary to discharge the defective substrate from the series of bonding processes and transfer it to the downstream process, so that the cycle time can be further reduced and a good product can be produced efficiently.
　なお、上述では、基板保持部２，ヘッド部３が１つずつ備えられている例を示した。しかし、接合条件によっては、加熱しながら接合完了するまでの時間が、サイクルタイムの短縮の律速（つまり、ボトルネック）となる。そのため、本発明に係るボンディング装置は、第２基板保持部と、第２ヘッド部と、第２ヒータ部とをさらに備えた構成のボンディング装置とすることが好ましい。
第２基板保持部は、接合が未完了の仮接合状態基板を保持するものである。
第２ヘッド部は、前記仮接合状態基板と複数のデバイスチップに対して外力を付与するものである。
第２ヒータ部は、前記仮接合状態基板と各デバイスチップとの間にある固化途中状態の接合用ペーストを再加熱するものである。 In the above description, the example in which the substrate holding part 2 and the head part 3 are provided one by one is shown. However, depending on the joining conditions, the time until the joining is completed while heating becomes a rate-determining factor (ie, bottleneck) for shortening the cycle time. Therefore, the bonding apparatus according to the present invention is preferably a bonding apparatus having a configuration further including a second substrate holding part, a second head part, and a second heater part.
The second substrate holding unit holds a temporary bonded state substrate that has not been bonded yet.
The second head portion applies an external force to the temporary bonded state substrate and the plurality of device chips.
The second heater unit reheats the bonding paste in a solidified state between the temporary bonded substrate and each device chip.
　このような構成をしているため、上記のボンディング装置は、加熱しながら接合完了するまでの時間を分割して行うことにより、１枚の基板を処理するリードタイムは長くなるものの、単位時間あたりの処理枚数を鑑みれば、サイクルタイムを短縮でき、効率よく良品を生産することができる。 Because of such a configuration, the above bonding apparatus divides the time until the bonding is completed while heating, but the lead time for processing one substrate becomes longer, but the unit time per unit time In view of the number of processed sheets, the cycle time can be shortened and a good product can be produced efficiently.
　なお、上述では、加熱して接合直後の基板をハンドリングする例を示した。しかし、下流工程によっては、基板が高温の状態で搬送されることを嫌う場合がある。その場合、基板保持部２や基板排出部ＷＥで基板を保持したまま温度が低下するのを待っていると、次の基板を処理できず、装置内で滞留し、サイクルタイムが延びる要因となる。 In addition, in the above-mentioned, the example which handles the board | substrate immediately after joining by heating was shown. However, depending on the downstream process, the substrate may be disliked from being conveyed in a high temperature state. In that case, if the substrate holding unit 2 or the substrate discharging unit WE is waiting for the temperature to drop while holding the substrate, the next substrate cannot be processed and stays in the apparatus, resulting in an increase in cycle time. .
　そのため、この様な場合には、本発明に係るボンディング装置は、デバイスチップが接合された基板Ｗ３を冷却する基板冷却部をさらに備えた構成のボンディング装置とすることが好ましい。具体的には、基板冷却部は、冷却プレートと呼ばれる、銅、アルミ、ジュラルミン、鉄などの金属材料でできた板材を、基板Ｗ３に接触させる構成とする。例えば、基板Ｗの外形寸法と同等かそれ以上、若しくはそれ以下の大きさの冷却プレートを準備し、基板排出部ＷＥ２を用いて、基板Ｗ３をこの冷却プレートに向けて移動し、デバイスチップＣ１～Ｃ４側若しくはその反対側を、この冷却プレートに接触させる。そうすることで、高温となっているデバイスチップＣ１～Ｃ４と基板Ｗ３の温度を下げることができる。なお、さらに、冷却プレートは、放熱フィンを備えておき、放熱フィンに冷風を送って基板を冷却する構成（いわゆる空冷方式）や、冷却プレート内部に流路を備えておき、この流路に冷却水を流して基板を冷却する構成（いわゆる水冷方式）としても良い。 Therefore, in such a case, the bonding apparatus according to the present invention is preferably a bonding apparatus having a configuration further including a substrate cooling unit that cools the substrate W3 to which the device chip is bonded. Specifically, the substrate cooling unit is configured to contact a substrate W3 with a plate material made of a metal material such as copper, aluminum, duralumin, or iron, called a cooling plate. For example, a cooling plate having a size equal to or larger than or smaller than the outer dimension of the substrate W is prepared, the substrate discharge unit WE2 is used to move the substrate W3 toward the cooling plate, and the device chips C1˜ The C4 side or the opposite side is brought into contact with the cooling plate. By doing so, the temperature of the device chips C1 to C4 and the substrate W3 that are at a high temperature can be lowered. In addition, the cooling plate is further provided with heat radiation fins, cooling air is sent to the heat radiation fins to cool the substrate (so-called air cooling method), and a flow path is provided inside the cooling plate, and the flow path is cooled. A configuration in which water is allowed to flow to cool the substrate (so-called water cooling method) may be employed.
　或いは、基板冷却部は、基板排出部ＷＥの移載ロボットＷＥ１が基板Ｗを保持している間に、基板Ｗに向けて冷風を送る冷却ファンにより構成しても良い。また、基板冷却部は、基板排出部ＷＥと下流装置ＡＮ２との間に配置し、基板Ｗ３を一定時間冷却させた後、別の基板排出手段を用いて下流装置ＡＮへ排出する構成としても良い。 Alternatively, the substrate cooling unit may be configured by a cooling fan that sends cold air toward the substrate W while the transfer robot WE1 of the substrate discharge unit WE holds the substrate W. Further, the substrate cooling unit may be arranged between the substrate discharge unit WE and the downstream apparatus AN2, cool the substrate W3 for a certain time, and then discharge it to the downstream apparatus AN using another substrate discharge unit. .
　このような構成をしているため、上記のボンディング装置は、加熱直後の基板を、基板保持部２から基板冷却部へ載置し、下流装置が受け取りできる温度に冷却して、下流装置へ搬出することができる。そのため、下流装置へ受け渡す基板が装置内で滞留せず、サイクルタイムを短縮でき、効率よく良品を生産することができる。 Due to such a configuration, the above-described bonding apparatus places the substrate immediately after heating from the substrate holding unit 2 onto the substrate cooling unit, cools it to a temperature that can be received by the downstream device, and carries it out to the downstream device. can do. Therefore, the substrate delivered to the downstream apparatus does not stay in the apparatus, the cycle time can be shortened, and a good product can be produced efficiently.
　［別の形態］
　なお、上述の説明では、接合用ペーストＣＰを加熱するヒータ部２１ｂ，３２が、基板保持部２とヘッド部３の双方に備えられている構成を例示した。そうすることで、接合のための加熱時間が短くて済むため、生産効率を向上させることができるので、好ましい形態と言える。しかし、本発明を具現化する上では、この形態に限定されず、どちらか一方を備えた構成としても良い。 [Another form]
In the above description, the configuration in which the heater parts 21b and 32 for heating the bonding paste CP are provided in both the substrate holding part 2 and the head part 3 is exemplified. By doing so, since the heating time for joining can be shortened, the production efficiency can be improved. However, in embodying the present invention, the present invention is not limited to this form, and a configuration including either one may be employed.
　　１　　自動ボンディング装置
　　２　　基板保持部
　　３　　ヘッド部
　　４　　ヘッド昇降機構
　　５　　ヘッド加振部
　　６　　ヘッド加圧部
　ＢＤ　　ボンディング部
　ＷＳ　　基板供給部
　ＰＰ　　ペースト塗布部
　ＣＳ　　チップ供給部
　ＴＨ　　チップトレイホルダー
　ＣＭ　　　チップマウンタ
　ＳＬ　　チップスライダー
　ＷＥ　　基板排出部
　ＭＣ　　統括制御部
　　Ｗ　　基板
　Ｃ１～Ｃ４　デバイスチップ
　Ｐ１～Ｐ４　電極パッド
　ＣＰ　　接合用ペースト
　ＷＳ１　移載ロボット
　ＷＳ２　移載ハンド
　ＷＳ３　多関節アーム
　ＷＳ４　回転昇降機構
　ＷＳ５　制御部
　ＰＰ１　スキージ
　ＰＰ２　ブレード
　ＰＰ３　開口部（メッシュ）
　ＰＰ４　ペースト供給部
　ＰＰ５　ブレード移動機構
　ＣＭ１　　レール
　ＣＭ２　　スライダー
　ＣＭ３　　連結部材
　ＣＭ４　　レール
　ＣＭ５　　スライダー
　ＣＭ６　　連結部材
　ＣＭ７　　レール
　ＣＭ８　　スライダー
　ＣＭ９　　連結部材
　ＣＭ１０　アライメントカメラ
　ＣＭ１１　回転機構
　ＣＭ１２　ピックアップユニット
　ＣＭ１３　回転中心
　ＳＬ１　ベース材
　ＳＬ２　レール
　ＳＬ３　スライダー
　ＳＬ４　
　ＷＥ１　移載ロボット
　ＷＥ２　移載ハンド
　ＷＥ３　多関節アーム
　ＷＥ４　回転昇降機構
　ＷＥ５　制御部
　ＰＯ１　基板受取位置
　ＰＯ２　基板受渡位置
　ＰＨ　　塗布ペースト高さ測定部
　　８　　接合領域観察部
　　９　　ペースト状態検査部
　１０　　ベース部材
　１４　　連結部材
　１５　　レール
　１６　　Ｘ軸スライダー
　２０　　基板載置台
　２１　　支持部材（ガラスステージ）
　２１ａ　保護板
　２１ｂ　ヒータ部
　２１ｃ　補強板
　２１ｇ　断熱材
　２１ｈ　開口部
　２１ｋ　ヒータ制御部
　２２　　フレーム部材
　２３　　吸着部
　２４　　基板観察部
　２４Ｃ　エリアセンサーカメラ
　２４Ｌ　撮像用レンズ
　２５　　レール
　２６　　Ｙ軸スライダー
　２８　　基板昇降機構
　２８ａ　リフトピン
　２８ｂ　連結部材
　２８ｃ　昇降ユニット
　２８ｄ　可動部
　３１　　チップ保持部
　３２　　ヒータ部
　３３　　連結部材
　３４　　連結部材
　３５　　連結部材
　３５　　連結部材
　４０　　直動駆動ユニット
　４０ａ　直動シリンダーユニット
　４１　　ベースプレート
　４２　　レール
　４３　　Ｚ軸スライダー
　４４　　ボールねじ
　４５　　回転モータ
　４６　　筐体
　４６ａ　加圧流体供給ポート
　４６ｂ　加圧流体供給ポート
　４７　　シャフト
　４８　　弁板
　４９　　昇降ガイド部
　４９ｓ　シャフト
　４９ｂ　リニアブッシュ
　５１　　高周波振動発生器
　５２　　矢印（加振方向）
　６０　　直動シリンダーユニット
　６１　　筐体
　６１ａ　加圧流体供給ポート
　６１ｂ　加圧流体供給ポート
　６２　　シャフト
　６２ｖ　矢印（シャフト移動方向）
　６３　　弁板
　６５　　押さえ部材
　６６　　ナックルジョイント
　６７　　ナックルジョイント
　６８　　先端部
　６８ｖ　矢印（回動方向）
　７０　　連結部材
　７１　　チップ載置台
　９１　　画像処理装置
　　Ｓ　　球面軸受 DESCRIPTION OF SYMBOLS 1 Automatic bonding apparatus 2 Substrate holding part 3 Head part 4 Head raising / lowering mechanism 5 Head vibration part 6 Head pressurizing part BD Bonding part WS Substrate supply part PP Paste application part CS Chip supply part TH Chip tray holder CM Chip mounter SL Chip slider WE Substrate Ejection Unit MC General Control Unit W Substrate C1 to C4 Device Chip P1 to P4 Electrode Pad CP Bonding Paste WS1 Transfer Robot WS2 Transfer Hand WS3 Articulated Arm WS4 Rotation Lifting Mechanism WS5 Control Unit PP1 Squeegee PP2 Blade PP3 Opening (mesh)
PP4 Paste supply part PP5 Blade moving mechanism CM1 rail CM2 slider CM3 connecting member CM4 rail CM5 slider CM6 connecting member CM7 rail CM8 slider CM9 connecting member CM10 Alignment camera CM11 rotating mechanism CM12 pickup unit CM13 rotating center SL1 base material SL2 rail SL
WE1 Transfer robot WE2 Transfer hand WE3 Articulated arm WE4 Rotating lift mechanism WE5 Control unit PO1 Substrate receiving position PO2 Substrate delivery position PH Coating paste height measuring unit 8 Bonding area observation unit 9 Paste state inspection unit 10 Base member 14 Connecting member 15 rail 16 X-axis slider 20 substrate mounting table 21 support member (glass stage)
21a Protection plate 21b Heater part 21c Reinforcement plate 21g Heat insulation material 21h Opening part 21k Heater control part 22 Frame member 23 Adsorption part 24 Substrate observation part 24C Area sensor camera 24L Imaging lens 25 Rail 26 Y-axis slider 28 Substrate lifting mechanism 28a Lift pin 28b Connecting member 28c Elevating unit 28d Movable part 31 Chip holding part 32 Heater part 33 Connecting member 34 Connecting member 35 Connecting member 35 Connecting member 40 Direct acting drive unit 40a Direct acting cylinder unit 41 Base plate 42 Rail 43 Z-axis slider 44 Ball screw 45 Rotation Motor 46 Housing 46a Pressurized fluid supply port 46b Pressurized fluid supply port 47 Shaft 48 Valve plate 49 Elevating guide portion 49s Shaft 49b Linear bush 51 High Wave vibration generator 52 Arrow (vibration direction)
60 Linear Motion Cylinder Unit 61 Housing 61a Pressurized Fluid Supply Port 61b Pressurized Fluid Supply Port 62 Shaft 62v Arrow (Shaft Movement Direction)
63 Valve plate 65 Holding member 66 Knuckle joint 67 Knuckle joint 68 Tip 68v Arrow (rotation direction)
70 connecting member 71 chip mounting table 91 image processing apparatus S spherical bearing

Claims (11)

  1. 　基板表面に設けられた複数の電極パッド上に、複数のデバイスチップを接合するボンディング装置であって、
    　前記複数のデバイスチップの接合対象となる接合対象基板を供給する基板供給部と、
    前記接合対象基板の電極パッド上に接合用ペーストを塗布するペースト塗布部と、
    前記接合用ペーストが塗布された接合対象基板を保持する基板保持部と、
    前記接合対象基板上の電極パッドの位置・間隔に対応させた状態で接合対象となる複数のデバイスチップを供給するチップ供給部と、
    前記チップ供給部から供給される前記接合対象となる複数のデバイスチップを一度に保持するヘッド部と、
    前記基板保持部に対して前記ヘッド部を上下方向に昇降移動させるヘッド昇降機構と、
    前記ヘッド部を上下方向に加振するヘッド加振部と、
    前記複数の電極パッドと各デバイスチップを接合する接合用ペーストを加熱するヒータ部と、
    デバイスチップが接合された基板を前記基板保持部から搬出する基板搬出部とを備えた、
    自動ボンディング装置。     A bonding apparatus for bonding a plurality of device chips on a plurality of electrode pads provided on a substrate surface,
    A substrate supply unit for supplying a bonding target substrate to be bonded to the plurality of device chips;
    A paste application unit that applies a bonding paste onto the electrode pads of the bonding target substrates;
    A substrate holding unit for holding a bonding target substrate coated with the bonding paste;
    A chip supply unit for supplying a plurality of device chips to be bonded in a state corresponding to the positions and intervals of the electrode pads on the bonding target substrate;
    A head unit for holding a plurality of device chips to be joined supplied from the chip supply unit at a time;
    A head lifting mechanism for moving the head part up and down in the vertical direction with respect to the substrate holding part;
    A head excitation unit for exciting the head unit in the vertical direction;
    A heater section for heating a bonding paste for bonding the plurality of electrode pads and each device chip;
    A substrate unloading unit that unloads the substrate to which the device chip is bonded from the substrate holding unit,
    Automatic bonding equipment.
  2. 前記ヘッド部と前記ヘッド昇降機構とが、球面軸受を介して連結されている
    ことを特徴とする、請求項１に記載の自動ボンディング装置。     The automatic bonding apparatus according to claim 1, wherein the head unit and the head lifting mechanism are connected via a spherical bearing.
  3. 前記ヘッド部を前記基板保持部に向けてさらに押し付けるヘッド加圧部を備えた
    ことを特徴とする、請求項１又は請求項２に記載の自動ボンディング装置。     The automatic bonding apparatus according to claim 1, further comprising a head pressure unit that further presses the head unit toward the substrate holding unit.
  4. 前記基板表面に設けられた複数の電極パッド上に接合用ペーストが塗布された状態で当該塗布された接合用ペーストの高さを測定する塗布ペースト高さ測定部と、
    前記接合用ペーストの塗布高さが適性範囲内かどうかを検査する塗布ペースト高さ検査部とを備えた
    ことを特徴とする、請求項１～３のいずれかに記載の自動ボンディング装置。     A coating paste height measuring unit that measures the height of the applied bonding paste in a state where the bonding paste is applied on the plurality of electrode pads provided on the substrate surface;
    The automatic bonding apparatus according to any one of claims 1 to 3, further comprising an application paste height inspection unit that inspects whether or not the application height of the bonding paste is within an appropriate range.
  5. ペースト高さ検査部で不良判定された基板を排出する不良基板排出部を備えた
    ことを特徴とする、請求項４に記載の自動ボンディング装置。     5. The automatic bonding apparatus according to claim 4, further comprising a defective substrate discharge unit that discharges a substrate that has been determined to be defective by the paste height inspection unit.
  6. 塗布された接合用ペーストの高さを測定する塗布ペースト高さ測定部と、
    塗布されたペースト高さの履歴を記憶する塗布ペースト高さ履歴記憶部と、
    塗布されたペースト高さの履歴に基づいて次に塗布するペースト塗布量を決定するペースト塗布量フィードバック部とを備えた
    ことを特徴とする、請求項１～５のいずれかに記載の自動ボンディング装置。     A coating paste height measuring unit for measuring the height of the applied bonding paste;
    A coating paste height history storage unit for storing a history of applied paste height;
    The automatic bonding apparatus according to any one of claims 1 to 5, further comprising a paste application amount feedback unit that determines a paste application amount to be applied next based on a history of applied paste height. .
  7. 前記複数のデバイスチップが接合される各電極パッドの周辺部を少なくとも含む領域を観察する接合領域観察部と、
    当該複数のデバイスチップが正常に接合されたかどうかについて接合中若しくは接合後のペーストの状態を観察して検査を行うペースト状態検査部と、
    ペースト状態検査部で接合不良と判定された基板を排出する不良基板排出部とを備えた
    ことを特徴とする、請求項１～６のいずれかに記載の自動ボンディング装置。     A bonding region observation unit for observing a region including at least a peripheral portion of each electrode pad to which the plurality of device chips are bonded;
    A paste state inspection unit that performs inspection by observing the state of the paste during or after bonding as to whether or not the plurality of device chips are normally bonded;
    The automatic bonding apparatus according to any one of claims 1 to 6, further comprising a defective substrate discharge unit that discharges a substrate that has been determined to be bonded by the paste state inspection unit.
  8. 接合完了時のヘッド高さを検出する接合時ヘッド高さ検出部と、
    接合完了時のヘッド高さの許容範囲を登録する接合時ヘッド高さ許容範囲登録部と、
    接合完了時のヘッド高さが許容範囲内かどうかを判定する接合時ヘッド高さ良否判定部とを備えた
    ことを特徴とする、請求項１～７のいずれかに記載の自動ボンディング装置。     A head height detecting unit for detecting the head height when the joining is completed;
    A head height tolerance registration section for registering the head height tolerance when the joining is completed;
    The automatic bonding apparatus according to any one of claims 1 to 7, further comprising: a head height determining unit for determining whether or not the head height upon completion of bonding is within an allowable range.
  9. 接合時ヘッド高さ良否判定部で不良判定された基板を排出する不良基板排出部を備えた
    ことを特徴とする、請求項８に記載の自動ボンディング装置。     9. The automatic bonding apparatus according to claim 8, further comprising a defective substrate discharge unit that discharges a substrate that has been determined to be defective by the head height determination unit during bonding.
  10. 接合が未完了の仮接合状態基板を保持する第２基板保持部と、
    前記仮接合状態基板と複数のデバイスチップに対して外力を付与する第２ヘッド部と、
    前記仮接合状態基板と各デバイスチップとの間にある固化途中状態の接合用ペーストを再加熱する第２ヒータ部とを備えた
    ことを特徴とする、請求項１～９のいずれかに記載の自動ボンディング装置。     A second substrate holding unit for holding a temporarily bonded substrate that has not been bonded;
    A second head portion for applying an external force to the temporary bonded state substrate and the plurality of device chips;
    10. The second heater unit according to claim 1, further comprising a second heater unit that reheats the bonding paste in a solidified state between the temporarily bonded substrate and each device chip. Automatic bonding equipment.
  11. デバイスチップが接合された基板を冷却する基板冷却部を備えた
    ことを特徴とする、請求項１～１０のいずれかに記載の自動ボンディング装置。     11. The automatic bonding apparatus according to claim 1, further comprising a substrate cooling unit that cools the substrate to which the device chip is bonded.
PCT/JP2014/079391 2014-01-08 2014-11-06 Automatic bonding apparatus WO2015104890A1 (en)

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