JP2020127002A - Semiconductor element bonding facility - Google Patents

Semiconductor element bonding facility Download PDF

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JP2020127002A
JP2020127002A JP2020004281A JP2020004281A JP2020127002A JP 2020127002 A JP2020127002 A JP 2020127002A JP 2020004281 A JP2020004281 A JP 2020004281A JP 2020004281 A JP2020004281 A JP 2020004281A JP 2020127002 A JP2020127002 A JP 2020127002A
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substrate
frame
positioning stage
axis
semiconductor element
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徐秋田
Hsu Max
頼允晉
Jin Lai Yun
梁奕智
Eih-Zhe Liang
邱添煌
Casper Chiu
莊承林
Benjamin Chuang
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FITTECH CO Ltd
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

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Abstract

To provide a mounting apparatus capable of significantly reducing a manufacturing time and manufacturing cost by mounting a semiconductor element on a substrate by pick-and-place and reflow.SOLUTION: In a semiconductor element bonding facility, an adhesive film 921 in which semiconductor elements 922 are arranged according to an interval between bonding points on a circuit board by pick-and-place, and a conductive substrate 91 on which semiconductor elements are mounted are directly bonded in a vacuum, and a series of operations of mounting a semiconductor element on a substrate by transmission scanning welding by heating such as laser light is performed.SELECTED DRAWING: Figure 5

Description

本発明は、半導体素子の接着設備に関する。 The present invention relates to a bonding facility for semiconductor devices.

一般的に、半導体産業工程では、チップ工場は、チップ選別機によりチップをテープ（Ｔａｐｅ）に配列し、下流のチップ実装工場に出荷し、チップ実装工場はピックアンドプレースの方式（Ｐｉｃｋ ａｎｄ Ｐｌａｃｅ）で、チップを１つずつ回路基板に配置して固定し、その過程において、チップ実装できかつ導電できる半田ペースト等などのペースト状の粘性媒体を塗布し、その後、チップ実装後の導電板全体をリフロー（Ｒｅｆｌｏｗ）工程で加熱して硬化させる。 Generally, in the semiconductor industry process, a chip factory arranges chips on a tape by a chip sorter and then ships the chips to a downstream chip mounting factory. The chip mounting factory uses a pick and place method. Then, the chips are arranged and fixed one by one on the circuit board, and in the process, a paste-like viscous medium such as solder paste that can be mounted on the chip and can be electrically conductive is applied, and then the entire conductive plate after chip mounting is In the reflow process, it is heated and cured.

しかしながら、このような公知の製造過程には、以下の欠点がある。
１．Ｒｅｆｌｏｗ工程の温度上昇曲線が遅く、１つのチップに少なくとも２つのリフローポイントの硬化反応時間が異なり、チップが反り不良が発生しやすい。
２．Ｒｅｆｌｏｗ工程は、単一の不良チップを補修又は再加工することができず、全体を再加工すると、他のリフロー正常なチップに影響を与える。
３．３ミル（ｍｉｌ）未満のチップの場合、ペースト塗布技術の歩留まりが制限される。４．選別機、チップ実装機による２回のＰｉｃｋ ａｎｄ Ｐｌａｃｅ工程は、作業時間が遅く、装置への投資コストが非常に大きい。
以上の通り、改善すべき喫緊の欠点が存在する。 However, such known manufacturing processes have the following drawbacks.
1. The temperature rise curve in the Reflow process is slow, and one chip has different curing reaction times at at least two reflow points, so that the chip is likely to have a warp defect.
2. The Reflow process cannot repair or rework a single defective chip, and if the entire rework process is performed, other reflow normal chips are affected.
For chips less than 3.3 mils, the yield of paste application technology is limited. 4. The pick and place process performed twice by the sorter and the chip mounter requires a long working time, and the investment cost for the device is very high.
As mentioned above, there are urgent drawbacks to be improved.

上記の問題を解決するために、新規で進歩性のある半導体素子の接着設備を提供する必要がある。 In order to solve the above problems, it is necessary to provide a new and inventive semiconductor device bonding facility.

本発明の主な目的は、回路基板の接合点の間隔に応じて、半導体素子をＴａｐｅに配列し、Ｔａｐｅと導電性基板を直接貼り合わせ、且つレーザー光等のような加熱方式で透過式の走査溶接を行うことができる半導体素子の接着設備を提供することであり、本発明は以下の利点を有する。
１．ＬＥＤ等の半導体素子のリフローにおいて克服しにくい問題を減少し、公知のチップ実装機、Ｒｅｆｌｏｗ装置に取って代わることができる。
２．回路基板の位置に応じて、チップ実装装置でチップに対してＰｉｃｋ ａｎｄ Ｐｌａｃｅ作業を再び行うことが不要であり、チップ選別段階のＴａｐｅフィルムを真空下で貼り合わせることにより、直接大量で転移することができ、表示画面のような数千万個のチップの場合、速度はＰｉｃｋ ａｎｄ Ｐｌａｃｅよりも数万倍も高く、多くの工程時間を節約することができる。 The main object of the present invention is to arrange semiconductor elements in a tape according to the distance between the junction points of the circuit board, directly bond the tape and the conductive substrate, and use a transmissive type by a heating method such as laser light. An object of the present invention is to provide a bonding facility for semiconductor devices capable of performing scanning welding, and the present invention has the following advantages.
1. The problems that are difficult to overcome in the reflow of semiconductor devices such as LEDs can be reduced, and the known chip mounter and Reflow device can be replaced.
2. Depending on the position of the circuit board, it is not necessary to carry out Pick and Place work again on the chip by the chip mounting device, and a large amount can be directly transferred by bonding the Tape film at the chip selection stage under vacuum. In the case of tens of millions of chips such as a display screen, the speed is tens of thousands times higher than that of Pick and Place, which can save a lot of process time.

上記目的を達成するための本発明は、ベース、基板検出機構、フレーム検出機構及び第１ピックアップ装置を備える半導体素子の接着設備を提供する。該ベースは、互いに垂直なＸ軸、Ｙ軸及びＺ軸を定義する。該基板検出機構は、該ベースに設けられて第１位置決めステージ及び第１検出モジュールを備え、該第１位置決めステージが該Ｚ軸周りに回転可能であり、基板を載置し、該基板に複数の導電回線が設けられ、該第１検出モジュールが該基板を走査して検出し、該第１位置決めステージが該基板を回転させて第１所定の角度に位置合わせする。該フレーム検出機構は、該ベースに設けられて第２位置決めステージ及び第２検出モジュールを備え、該第２位置決めステージが該Ｚ軸周りに回転可能であり、フレームを載置し、該フレームに接着フィルム及び該接着フィルムに配列される複数の半導体素子が設けられ、該第２検出モジュールが該フレームを走査して検出し、該第２位置決めステージが該フレームを回転させて第２所定の角度に位置合わせし、該導電回線又は該半導体素子に複数の半田が予め設けられる。該第１ピックアップ装置は、製品を形成するように該第１所定の角度に位置合わせした基板及び該第２所定の角度に位置合わせしたフレームの一方をピックアップして他方に貼り合わせることで、該フレームの各該半導体素子を該基板の該導電回線に正確に貼り合わせ、各該半田が該半導体素子及び該導電回線にそれぞれ接触する。 The present invention to achieve the above object provides a semiconductor device bonding facility including a base, a substrate detection mechanism, a frame detection mechanism, and a first pickup device. The base defines X, Y and Z axes that are perpendicular to each other. The substrate detection mechanism is provided on the base and includes a first positioning stage and a first detection module, the first positioning stage is rotatable about the Z axis, and the substrate is placed on the substrate, and a plurality of substrates are mounted on the substrate. Is provided, the first detection module scans and detects the substrate, and the first positioning stage rotates the substrate to align it at a first predetermined angle. The frame detection mechanism is provided on the base and includes a second positioning stage and a second detection module, the second positioning stage is rotatable about the Z axis, mounts the frame, and adheres to the frame. A plurality of semiconductor elements arranged on the film and the adhesive film are provided, the second detection module scans and detects the frame, and the second positioning stage rotates the frame to a second predetermined angle. A plurality of solders are preliminarily provided on the conductive line or the semiconductor element after alignment. The first pickup device picks up one of the substrate aligned at the first predetermined angle and the frame aligned at the second predetermined angle so as to form a product, and bonding them to the other. Each semiconductor element of the frame is accurately bonded to the conductive line of the substrate, and each solder is in contact with the semiconductor element and the conductive line.

本発明の好適な一実施例の斜視図である。1 is a perspective view of a preferred embodiment of the present invention. 本発明の好適な一実施例の平面図である。1 is a plan view of a preferred embodiment of the present invention. 本発明の好適な一実施例の製品の模式斜視図である。1 is a schematic perspective view of a product of a preferred embodiment of the present invention. 本発明の好適な一実施例の製品の模式斜視図である。1 is a schematic perspective view of a product of a preferred embodiment of the present invention. 本発明の好適な一実施例の製品の模式側面図である。It is a model side view of the product of one suitable example of the present invention. 本発明の好適な一実施例の製品の模式側面図である。It is a model side view of the product of one suitable example of the present invention. 本発明の好適な一実施例の他の斜視図である。It is another perspective view of a preferred embodiment of the present invention.

以下、実施例を用いて本発明の実施態様を説明するが、これは、本発明の保護範囲を限定するものではない。 Hereinafter, embodiments of the present invention will be described with reference to examples, but this does not limit the protection scope of the present invention.

図１〜図７には、本発明の好適な一実施例が示されている。本発明の半導体素子の接着設備１は、ベース２、基板検出機構３、フレーム検出機構４及び第１ピックアップ装置１１を備える。 1 to 7, there is shown a preferred embodiment of the present invention. The semiconductor device bonding facility 1 of the present invention includes a base 2, a substrate detection mechanism 3, a frame detection mechanism 4, and a first pickup device 11.

該ベース２は、互いに垂直なＸ軸Ｌ１、Ｙ軸Ｌ２及びＺ軸Ｌ３を定義する。 The base 2 defines an X axis L1, a Y axis L2 and a Z axis L3 which are perpendicular to each other.

該基板検出機構３は、該ベース２に設けられ、第１位置決めステージ３１及び第１検出モジュール３２を備える。該第１位置決めステージ３１は、該Ｚ軸Ｌ３周りに回転可能であり、基板９１を載置し、該基板９１には複数の導電回線９１１が設けられる。該第１検出モジュール３２は、該基板９１を走査して検出し、該第１位置決めステージ３１は、該基板９１を回転させて第１所定の角度に位置合わせする。 The substrate detection mechanism 3 is provided on the base 2 and includes a first positioning stage 31 and a first detection module 32. The first positioning stage 31 is rotatable about the Z-axis L3, mounts a substrate 91, and the substrate 91 is provided with a plurality of conductive lines 911. The first detection module 32 scans and detects the substrate 91, and the first positioning stage 31 rotates the substrate 91 to align it at a first predetermined angle.

該フレーム検出機構４は、該ベース２に設けられ、第２位置決めステージ４１及び第２検出モジュール４２を備える。
該第２位置決めステージ４１は、Ｚ軸Ｌ３周りに回転可能であり、フレーム９２を載置し、該フレーム９２には、接着フィルム９２１及び該接着フィルム９２１に配列して設けられる複数の半導体素子９２２が設けられる。本実施例では、該半導体素子９２２はＬＥＤチップである。
該第２検出モジュール４２は、該フレーム９２を走査して検出する。該第２位置決めステージ４１は、該フレーム９２を回転させて第２所定の角度に位置合わせする。該導電回線９１１又は該半導体素子９２２には、複数の半田９３が予め設けられており、本実施例では、該半田９３は、該半導体素子９２２に設けられる。 The frame detection mechanism 4 is provided on the base 2 and includes a second positioning stage 41 and a second detection module 42.
The second positioning stage 41 is rotatable about the Z-axis L3, mounts a frame 92, and the frame 92 has an adhesive film 921 and a plurality of semiconductor elements 922 arranged and arranged on the adhesive film 921. Is provided. In this embodiment, the semiconductor element 922 is an LED chip.
The second detection module 42 scans and detects the frame 92. The second positioning stage 41 rotates the frame 92 to align it at a second predetermined angle. A plurality of solders 93 are provided in advance on the conductive line 911 or the semiconductor element 922. In this embodiment, the solder 93 is provided on the semiconductor element 922.

なお、本実施例では、該第１検出モジュール３２及び該第２検出モジュール４２は、電荷結合素子（ＣＣＤ）センサーである。正確に位置合わせする効果を達成するために、該第１検出モジュール３２は、該基板９１の導電回線９１１を走査して位置合わせし、該第２検出モジュール４２は、該半導体素子９２２の配列を走査して位置合わせする。詳細には、該第１検出モジュール３２は、該基板２に対して回転して位置合わせし、基準点の位置決めを行う以外、該基板２の該導電回線の配線位置の精度を検査することもできる。検出方法は、ＣＣＤで該基板２の該導電回線の特徴点に対して撮影、位置決めを行い、かつ特徴点の座標を取得して許容誤差との比較を行い、該基板上の基準点に対する該基板上の該導電回線の複数の溶接点の該Ｘ軸Ｌ１、該Ｙ軸Ｌ２、該Ｚ軸Ｌ３の許容ずれ量を監視して検査することができ、異常が検出された時、異常な該基板の接着作業を行わないようにタイムリーに提示することができる。
該第２検出モジュール４２は、該接着フィルム９２１上の該半導体素子９２２に対して回転して位置合わせし、基準点の位置決めを行う以外、該接着フィルム９２１上の該半導体素子９２２の位置精度を検査することもできる。その監視方法は、ＣＣＤで該接着フィルム９２１上の該半導体素子９２２に対して撮影、位置決めを行い、かつ該半導体素子９２２の特徴点の座標を取得して許容誤差との比較を行い、基準点対する該半導体素子９２２の該Ｘ軸Ｌ１、該Ｙ軸Ｌ２、角度誤差の許容ずれ量を監視することができ、異常が検出された時、異常な該フレーム９２の接着作業を行わないようにタイムリーに提示することができる。 In this embodiment, the first detection module 32 and the second detection module 42 are charge coupled device (CCD) sensors. In order to achieve the effect of precise alignment, the first detection module 32 scans and aligns the conductive lines 911 of the substrate 91, and the second detection module 42 aligns the semiconductor elements 922. Scan and align. In detail, the first detection module 32 may be rotated and aligned with respect to the substrate 2 to position the reference point, and may be used to inspect the wiring position accuracy of the conductive line of the substrate 2. it can. The detection method is as follows: The CCD is used to photograph and position the characteristic point of the conductive line of the substrate 2, and the coordinates of the characteristic point are acquired and compared with the allowable error to determine the reference point on the substrate. It is possible to monitor and inspect the allowable deviation amount of the X-axis L1, the Y-axis L2, and the Z-axis L3 of a plurality of welding points of the conductive line on the board, and when an abnormality is detected, It is possible to present in a timely manner so that the bonding work of the substrate is not performed.
The second detection module 42 rotates the position of the semiconductor element 922 on the adhesive film 921 to align the semiconductor element 922 to position a reference point, and also detects the positional accuracy of the semiconductor element 922 on the adhesive film 921. You can also inspect. The monitoring method is as follows. The CCD is used to photograph and position the semiconductor element 922 on the adhesive film 921, and the coordinates of the characteristic points of the semiconductor element 922 are acquired and compared with an allowable error to obtain a reference point. The allowable deviation amount of the X-axis L1, the Y-axis L2, and the angular error of the semiconductor element 922 to the semiconductor element 922 can be monitored, and when an abnormality is detected, time is taken to prevent abnormal attachment work of the frame 92. Can be presented to Lee.

該第１ピックアップ装置１１は、製品９４を形成するように該第１所定の角度に位置合わせした基板９１と該第２所定の角度に位置合わせしたフレーム９２との一方をピックアップして他方に貼り合わせる（本実施例では、該第１ピックアップ装置１１は、該フレーム９２をピックアップして該基板９１に貼り合わせる）。
なお、本実施例では、該半導体素子の接着設備１には、該基板９１と該フレーム４を張り合わせる過程に監視して該半導体素子９２２が該導電回線９１１に順調に貼り合わせられることを確認するための接着監視モジュール１６（図７に示されるように）がさらに設けられる。詳細には、その検出方法は、ＣＣＤで該フレーム９２上の該基板２と該半導体素子９２２との接着後の複数の特徴点に対して撮影、位置決めを行い、かつ該基板２及び該半導体素子９２２の特徴点の座標を取得して許容誤差との比較を行い、接着後の該基板２上の基準点に対する接着後の該半導体素子９２２のＸ軸Ｌ１、Ｙ軸Ｌ２、Ｚ軸Ｌ３の許容ずれ量を監視する。異常が検出された時、タイムリーに記録し、接着異常の該フレーム９２を該フレームカセット座９６内に戻して接着の誤り訂正の検査を作業者に提示することができる。 The first pickup device 11 picks up one of the substrate 91 aligned at the first predetermined angle and the frame 92 aligned at the second predetermined angle so as to form a product 94, and attaches it to the other. Then, in this embodiment, the first pickup device 11 picks up the frame 92 and attaches it to the substrate 91.
In the present embodiment, the bonding equipment 1 for the semiconductor element is monitored in the process of bonding the substrate 91 and the frame 4 to confirm that the semiconductor element 922 is successfully bonded to the conductive line 911. An adhesion monitoring module 16 (as shown in FIG. 7) is also provided for doing so. More specifically, the detection method is such that a CCD is used to photograph and position a plurality of characteristic points on the frame 92 after the substrate 2 and the semiconductor element 922 have been bonded, and the substrate 2 and the semiconductor element The coordinates of the characteristic points of 922 are acquired and compared with the allowable error, and the X-axis L1, the Y-axis L2, and the Z-axis L3 of the semiconductor element 922 after adhering to the reference point on the substrate 2 after adhering are allowed. Monitor the amount of deviation. When an abnormality is detected, it can be recorded in a timely manner, and the frame 92 with the adhesion abnormality can be returned to the inside of the frame cassette seat 96 to present the operator with an inspection for error correction of the adhesion.

なお、本実施例では、該第１ピックアップ装置１１は、Ｘ軸Ｌ１及びＺ軸Ｌ３に沿って選択的に移動可能である。該第１ピックアップ装置１１は、吸盤であり、該第１ピックアップ装置１１が該基板９１と該フレーム９２を該Ｚ軸Ｌ３の方向に沿って貼り合わせることで、該フレーム９２の各該半導体素子９２２を該基板９１の該導電回線９１１に正確に貼り合わせる。各該半田９３は、該半導体素子９２２及び該導電回線９１１にそれぞれ接触する。そのため、該製品９４は、レーザー光等の加熱方式で透過式の走査溶接を行うことにより、該半導体素子９２２を該導電回線９１１に溶接し、従って該半導体素子の接着設備１は、従来のピックアンドプレースの方式と比べてＰｉｃｋ ａｎｄ Ｐｌａｃｅ作業及びリフロー（Ｒｅｆｌｏｗ）工程により、比較的高速な工程になる。
該基板９１は、光透過性又は光不透過性のセラミック板、シリコン結晶板、ＰＣＢ板、ガラス板又はサファイア板であってもよく、該接着フィルム９２１の材質は、ＰＥブルーフィルム、ＵＶフィルム又は他の光透過性かつ可撓性の接着フィルムであってもよい。該半導体素子９２２は、接着剤を塗布せずに該接着フィルム９１１に接着することができるため、工程が簡素化される。該半田９３は、印刷、接着材塗布、メッキ、又はエッチングの方式で該半導体素子に設けられてもよく、それにより、効率を向上させる。 In this embodiment, the first pickup device 11 can be selectively moved along the X axis L1 and the Z axis L3. The first pickup device 11 is a suction cup, and the first pickup device 11 bonds the substrate 91 and the frame 92 along the direction of the Z-axis L3, so that each semiconductor element 922 of the frame 92 is attached. Is accurately attached to the conductive line 911 of the substrate 91. Each solder 93 contacts the semiconductor element 922 and the conductive line 911, respectively. Therefore, the product 94 welds the semiconductor element 922 to the conductive line 911 by performing transmission type scanning welding using a heating method such as a laser beam, and therefore, the bonding equipment 1 for the semiconductor element is the same as the conventional picking equipment. The pick and place operation and the reflow (Reflow) process make the process relatively faster than the and-place method.
The substrate 91 may be a light transmissive or light impermeable ceramic plate, a silicon crystal plate, a PCB plate, a glass plate or a sapphire plate, and the material of the adhesive film 921 is a PE blue film, a UV film or It may be another light-transmissive and flexible adhesive film. Since the semiconductor element 922 can be bonded to the adhesive film 911 without applying an adhesive, the process is simplified. The solder 93 may be provided on the semiconductor element by printing, applying an adhesive, plating, or etching, thereby improving efficiency.

本実施例では、該第１位置決めステージ３１及び該第２位置決めステージ４１は、該Ｘ軸Ｌ１、Ｙ軸Ｌ２に沿って選択的に移動可能である。 In this embodiment, the first positioning stage 31 and the second positioning stage 41 are selectively movable along the X axis L1 and the Y axis L2.

好ましくは、該ベース２には、基板ピックアップアーム１２がさらに設けられる。該基板ピックアップアーム１２は、基板カセット９５から該基板９１をピックアップして該第１位置決めステージ３１に配置する。
本実施例では、該ベース２には、第１粗位置決めステージ１４がさらに設けられ、該基板ピックアップアーム１２は、まず該基板９１を該第１粗位置決めステージ１４に配置して粗位置合わせした後、該基板９１を該第１位置決めステージ３１に配置し、該第１位置決めステージ３１の作業時間を節約することができる。 Preferably, the base 2 is further provided with a substrate pickup arm 12. The substrate pickup arm 12 picks up the substrate 91 from the substrate cassette 95 and places it on the first positioning stage 31.
In the present embodiment, the base 2 is further provided with a first coarse positioning stage 14, and the substrate pickup arm 12 first arranges the substrate 91 on the first coarse positioning stage 14 and performs rough alignment. By disposing the substrate 91 on the first positioning stage 31, the working time of the first positioning stage 31 can be saved.

該ベース２には、フレームピックアップアーム１３及び中継プラットフォーム１５が設けられる。該中継プラットフォーム１５及び該フレームピックアップアーム１３は、該Ｙ軸Ｌ２の方向に沿って移動可能であり、該フレームピックアップアーム１３は、フレームカセット座９６から該フレーム９２をピックアップして該中継プラットフォーム１５に配置し、該第１ピックアップ装置１１は、該フレーム９２を該中継プラットフォーム１５からピックアップして該第２位置決めステージ４１に配置する。該第１ピックアップ装置１１は、さらに該製品９４を該第２位置決めステージ４１からピックアップして該中継プラットフォーム１５に戻し、該フレームピックアップアーム１３は、次の溶接工程に使用するために、該製品９４を該中継プラットフォーム１５からピックアップして該フレームカセット座９６に配置する。本実施例では、該フレームピックアップアーム１３は、クランプ１３１であり、該フレームピックアップアーム１３は、該Ｙ軸Ｌ２沿って選択的に移動可能であり、該接着監視モジュール１６は、該中継プラットフォーム１５と該フレームカセット座９６との間に設けられる。 A frame pickup arm 13 and a relay platform 15 are provided on the base 2. The relay platform 15 and the frame pickup arm 13 are movable along the direction of the Y-axis L2, and the frame pickup arm 13 picks up the frame 92 from the frame cassette seat 96 to the relay platform 15. The first pickup device 11 picks up the frame 92 from the relay platform 15 and places it on the second positioning stage 41. The first pickup device 11 further picks up the product 94 from the second positioning stage 41 and returns it to the relay platform 15, and the frame pickup arm 13 uses the product 94 for use in the next welding process. Are picked up from the relay platform 15 and placed on the frame cassette seat 96. In this embodiment, the frame pickup arm 13 is a clamp 131, the frame pickup arm 13 is selectively movable along the Y-axis L2, and the adhesion monitoring module 16 is connected to the relay platform 15. It is provided between the frame cassette seat 96 and the frame cassette seat 96.

上記のとおり、本発明の半導体素子の接着設備は、該フレームに配列される該半導体素子を該基板の該導電回線に高速に貼り合わせ、レーザー溶接を行って該半導体素子と該導電回線を溶接することができ、接着フィルムを利用して、大量（数千〜数千万個）の１〜８０ミルのようなサイズの小さい半導体素子を一回で貼り合わせ、且つレーザー溶接により大量の半導体素子を溶接することができる。従って、半導体産業の工程の速度を向上させ、コストを低減させることができる。 As described above, in the bonding equipment for semiconductor elements of the present invention, the semiconductor elements arranged in the frame are bonded at high speed to the conductive lines of the substrate, and laser welding is performed to weld the semiconductor elements to the conductive lines. It is possible to bond a large number (several thousands to tens of millions) of small semiconductor elements such as 1 to 80 mils at a time by using an adhesive film, and a large number of semiconductor elements by laser welding. Can be welded. Therefore, the process speed of the semiconductor industry can be improved and the cost can be reduced.

１ 半導体素子の接着設備
１１ 第１ピックアップ装置
１２ 基板ピックアップアーム
１３ フレームピックアップアーム
１３１ クランプ
１４ 第１粗位置決めステージ
１５ 中継プラットフォーム
１６ 接着監視モジュール
２ ベース
３ 基板検出機構
３１ 第１位置決めステージ
３２ 第１検出モジュール
４ フレーム検出機構
４１ 第２位置決めステージ
４２ 第２検出モジュール
９１ 基板
９１１ 導電回線
９２ フレーム
９２１ 接着フィルム
９２２ 半導体素子
９３ 半田
９４ 製品
９５ 基板カセット
９６ フレームカセット座
Ｌ１ Ｘ軸
Ｌ２ Ｙ軸
Ｌ３ Ｚ軸 1 Semiconductor Device Bonding Equipment 11 First Pickup Device 12 Substrate Pickup Arm 13 Frame Pickup Arm 131 Clamp 14 First Rough Positioning Stage 15 Relay Platform 16 Bonding Monitoring Module 2 Base
3 Substrate Detection Mechanism 31 First Positioning Stage 32 First Detection Module 4 Frame Detection Mechanism 41 Second Positioning Stage 42 Second Detection Module 91 Substrate 911 Conductive Line 92 Frame 921 Adhesive Film 922 Semiconductor Element 93 Solder 94 Product 95 Substrate Cassette 96 Frame Cassette seat L1 X axis L2 Y axis L3 Z axis

Claims (10)

半導体素子の接着設備であって、
互いに垂直なＸ軸、Ｙ軸及びＺ軸を定義するベースと、
該ベースに設けられて第１位置決めステージ及び第１検出モジュールを備え、該第１位置決めステージが該Ｚ軸周りに回転可能であり、基板を載置し、該基板に複数の導電回線が設けられ、該第１検出モジュールが該基板を走査して検出し、該第１位置決めステージが該基板を回転させて第１所定の角度に位置合わせする基板検出機構と、
該ベースに設けられて第２位置決めステージ及び第２検出モジュールを備え、該第２位置決めステージが該Ｚ軸周りに回転可能であり、フレームを載置し、該フレームに接着フィルム及び該接着フィルムに配列される複数の半導体素子が設けられ、該第２検出モジュールが該フレームを走査して検出し、該第２位置決めステージが該フレームを回転させて第２所定の角度に位置合わせし、該導電回線又は該半導体素子に複数の半田が予め設けられるフレーム検出機構と、
製品を形成するように該第１所定の角度に位置合わせした基板及び該第２所定の角度に位置合わせしたフレームの一方をピックアップして他方に貼り合わせることで、該フレームの各該半導体素子を該基板の該導電回線に正確に貼り合わせ、各該半田が該半導体素子及び該導電回線にそれぞれ接触する第１ピックアップ装置と、を備える、
半導体素子の接着設備。 A semiconductor device bonding facility,
A base defining X, Y and Z axes that are perpendicular to each other,
The base is provided with a first positioning stage and a first detection module, the first positioning stage is rotatable about the Z-axis, a substrate is placed on the substrate, and a plurality of conductive lines are provided on the substrate. A substrate detection mechanism in which the first detection module scans and detects the substrate, and the first positioning stage rotates the substrate to align the substrate at a first predetermined angle,
The base is provided with a second positioning stage and a second detection module, the second positioning stage is rotatable about the Z axis, a frame is placed, and an adhesive film and an adhesive film are attached to the frame. A plurality of semiconductor elements arranged are provided, the second detection module scans and detects the frame, the second positioning stage rotates the frame to align the frame at a second predetermined angle, and A frame detection mechanism in which a plurality of solders are provided in advance on the line or the semiconductor element,
By picking up one of the substrate aligned at the first predetermined angle and the frame aligned at the second predetermined angle so as to form a product and adhering it to the other, each semiconductor element of the frame is formed. A first pickup device that is accurately bonded to the conductive line of the substrate, and each of the solder contacts the semiconductor element and the conductive line.
Bonding equipment for semiconductor devices. 該第１位置決めステージは、該Ｘ軸、Ｙ軸に沿って選択的に移動可能である、請求項１に記載の半導体素子の接着設備。 The semiconductor device bonding facility according to claim 1, wherein the first positioning stage is selectively movable along the X axis and the Y axis. 該第２位置決めステージは、該Ｘ軸、Ｙ軸に沿って選択的に移動可能である、請求項１に記載の半導体素子の接着設備。 The semiconductor device bonding facility according to claim 1, wherein the second positioning stage is selectively movable along the X axis and the Y axis. 該ベースには、基板カセットから該基板をピックアップして該第１位置決めステージに配置する基板ピックアップアームがさらに設けられる、請求項１に記載の半導体素子の接着設備。 The semiconductor device bonding facility according to claim 1, wherein the base is further provided with a substrate pickup arm for picking up the substrate from the substrate cassette and arranging the substrate on the first positioning stage. 該ベースには、第１粗位置決めステージがさらに設けられ、前記基板ピックアップアームは、まず該基板を該第１粗位置決めステージに配置して粗位置合わせした後、該基板を該第１位置決めステージに配置する、請求項４に記載の半導体素子の接着設備。 A first rough positioning stage is further provided on the base, and the substrate pickup arm first arranges the substrate on the first rough positioning stage to perform rough alignment, and then moves the substrate to the first positioning stage. The semiconductor device bonding facility according to claim 4, which is arranged. 該ベースには、フレームピックアップアーム及び中継プラットフォームがさらに設けられ、該フレームピックアップアームは、フレームカセット座から該フレームをピックアップして該中継プラットフォームに配置し、該第１ピックアップ装置は、該フレームを該中継プラットフォームからピックアップして該第２位置決めステージに配置し、該第１ピックアップ装置は、該製品を該第２位置決めステージからピックアップして該中継プラットフォームに戻し、該フレームピックアップアームは、該製品を該中継プラットフォームからピックアップして該フレームカセット座に配置する、請求項１に記載の半導体素子の接着設備。 The base is further provided with a frame pickup arm and a relay platform, the frame pickup arm picks up the frame from a frame cassette seat and places the frame on the relay platform, and the first pickup device mounts the frame on the base. The pickup platform picks up from the relay platform and places it on the second positioning stage, the first pickup unit picks up the product from the second positioning stage and returns it to the relay platform, and the frame pickup arm stores the product. The semiconductor device bonding equipment according to claim 1, wherein the equipment is picked up from a relay platform and placed on the frame cassette seat. 該フレームピックアップアームは、クランプであり、該フレームピックアップアームは、該Ｙ軸にそって選択的に移動可能である、請求項６に記載の半導体素子の接着設備。 The semiconductor device bonding facility according to claim 6, wherein the frame pickup arm is a clamp, and the frame pickup arm is selectively movable along the Y axis. 該第１ピックアップ装置は、Ｘ軸及びＺ軸に沿って選択的に移動可能であり、該第１ピックアップ装置は、吸盤であり、該第１ピックアップ装置は、該基板と該フレームを該Ｚ軸の方向に沿って貼り合わせる、請求項１から７のいずれか１項に記載の半導体素子の接着設備。 The first pickup device is selectively movable along the X axis and the Z axis, the first pickup device is a suction cup, and the first pickup device moves the substrate and the frame to the Z axis. The semiconductor device bonding facility according to any one of claims 1 to 7, which is bonded along the direction. 該第１検出モジュールは、電荷結合素子（ＣＣＤ）センサーであり、該第１検出モジュールは、該基板の導電回線を走査して位置合わせし、該第２検出モジュールは、電荷結合素子（ＣＣＤ）センサーであり、該第２検出モジュールは、該半導体素子の配列を走査して位置合わせする、請求項１から７のいずれか１項に記載の半導体素子の接着設備。 The first detection module is a charge coupled device (CCD) sensor, the first detection module scans and aligns a conductive line of the substrate, and the second detection module is a charge coupled device (CCD). It is a sensor, The said 2nd detection module scans and aligns the arrangement|sequence of this semiconductor element, The bonding facility of the semiconductor element of any one of Claim 1 to 7. 該半導体素子の接着設備には、該基板と該フレームを張り合わせる過程を監視して該半導体素子が該導電回線に順調に貼り合わせられることを確認するための接着監視モジュールがさらに設けられる、請求項１から７のいずれか１項に記載の半導体素子の接着設備。 The bonding equipment for the semiconductor device is further provided with a bonding monitoring module for monitoring a process of bonding the substrate and the frame to confirm that the semiconductor device is successfully bonded to the conductive line. Item 8. A facility for adhering a semiconductor element according to any one of items 1 to 7.
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