WO2015043265A1 - 有机电致发光器件及其制备方法、显示装置 - Google Patents

有机电致发光器件及其制备方法、显示装置 Download PDF

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WO2015043265A1
WO2015043265A1 PCT/CN2014/081117 CN2014081117W WO2015043265A1 WO 2015043265 A1 WO2015043265 A1 WO 2015043265A1 CN 2014081117 W CN2014081117 W CN 2014081117W WO 2015043265 A1 WO2015043265 A1 WO 2015043265A1
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layer
organic electroluminescent
electroluminescent device
solution
light
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PCT/CN2014/081117
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English (en)
French (fr)
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李彦松
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京东方科技集团股份有限公司
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Priority to US14/415,924 priority Critical patent/US10263189B2/en
Publication of WO2015043265A1 publication Critical patent/WO2015043265A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/811—Controlling the atmosphere during processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Definitions

  • the present invention relates to the field of display technology, and in particular to an organic electroluminescent device, a method of fabricating the same, and a display device comprising the same. Background technique
  • the method for preparing a functional layer (for example, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer) of an organic electroluminescence device by a solution method comprises: first forming a material composition of a functional layer The solution is then spin coated or sprayed to form the corresponding functional layer, followed by drying at room temperature. Solvent residue may occur during the dry film formation process of the above functional layer, resulting in poor compactness, unevenness, and defects of the functional layer, especially when the functional layer is a light-emitting layer, the host-guest molecule of the doping system Easy to agglomerate, can not be well integrated, thus affecting the energy transfer and carrier transport properties between host and guest materials.
  • the object of the present invention is to solve the problem of solvent residue and functional layer defects occurring in the functional layer of the conventional solution method for preparing an organic electroluminescent device, and to provide a method for preparing an organic electroluminescent device.
  • the technical solution for solving the technical problem of the present invention is a method for preparing an organic electroluminescence device, comprising: preparing at least one functional layer by the following steps: forming a solution of a functional layer material, and forming a functional layer with a solution of the functional layer material; a layer of liquid material; the layer of liquid material of the functional layer is vacuum dried to form a functional layer.
  • Vacuum drying is relatively dry at normal temperature. Because the molecular motion of the organic solvent molecules is more intense under heating, it is easy to volatilize. At the same time, because the vacuum conditions are more favorable for the volatilization and extraction of organic solvent molecules, the organic solvent is quickly removed, and the removal is thorough. .
  • the luminescent layer film which is dried by vacuum constant temperature is relatively dense, can effectively remove residual organic solvent and avoid formation defects, so that the film becomes flat and dense, and the mobility of carriers in the film is improved, which is favorable for electrons and air. The transmission and recombination of the hole.
  • the vacuum drying is vacuum constant temperature drying.
  • the vacuum drying processing time is divided into a plurality of time periods, the vacuum drying in each time period is vacuum constant temperature drying, and the vacuum drying temperature in at least one of the plurality of time periods is The difference in other time periods.
  • the vacuum drying temperature is in the range of from 70 °C to 150 °C.
  • the vacuum drying treatment time is from 10 min to 20 min.
  • the functional layer includes any one or more of a hole injection layer, a hole blocking layer, a light-emitting layer, an electron transport layer, and an electron injection layer.
  • the functional layer comprises a light-emitting layer
  • the solution component of the light-emitting layer comprises a phosphorescent material of a metal complex and a host material.
  • the phosphorescent material of the metal complex is a ruthenium complex material;
  • the ruthenium complex material is tris(2-phenylpyridine) ruthenium, 2-(4-anthracenephenyl) pyridine Any one of hydrazine, benzoquinoline and hydrazine.
  • the host material is m-(N-carbazolyl)benzene, polyvinylcarbazole, 1,2,4-triazole, anthracene, fluorene-bis(1-naphthyl)-fluorene. Any one of ⁇ '-diphenyl-fluorene, fluorene-biphenyl-4-4'-diamine, and coal-based polyaniline.
  • Another object of the present invention is to solve the problem of poor luminescence performance of a conventional organic electroluminescence device due to solvent residue during production, defects in a functional layer, and the like, and to provide an organic electroluminescence device having good luminescence properties,
  • the organic electroluminescent device is prepared by the above-described method for preparing an organic electroluminescent device.
  • Another object of the present invention is to provide a display device having high luminous efficiency and long service life, and the display device comprises the above-described organic electroluminescent device.
  • the preparation method of the organic electroluminescent device of the invention forms a relatively dense functional layer film by vacuum drying treatment on the functional layer liquid material layer when forming the functional layer, which can effectively remove residual organic solvent and avoid formation defects.
  • the film of the functional layer is made flat and dense, and the mobility of carriers in the film is improved, which facilitates the transport and recombination of electrons and holes; especially when the functional layer is a light-emitting layer, the main body of the doping system
  • the guest molecules can be well integrated to improve the host and guest materials.
  • the energy transfer and carrier transport properties between the two further improve the luminescent properties and lifetime of the organic electroluminescent device and the display device containing the organic electroluminescent device.
  • Fig. 2 is a graph showing the results of atomic force microscopy of the light-emitting layer obtained in Example 1 of the present invention. Medium phase diagram.
  • Fig. 4 is a phase diagram in the atomic force microscope test of the light-emitting layer obtained in Example 1 of the present invention.
  • Fig. 5 is a graph showing the results of luminance test of the light-emitting layers produced in Examples 1, 2, and 3 of the present invention at the same voltage.
  • Fig. 6 is a graph showing the results of current density test of the light-emitting layers produced in Examples 1, 2, and 3 of the present invention at the same voltage. detailed description
  • the comparative embodiment provides a method for preparing an organic electroluminescent device, which comprises preparing a functional layer of the organic electroluminescent device by a solution method.
  • the comparative example uses a solution method to prepare a light-emitting layer as an example, including the following. Steps:
  • the indium tin oxide conductive glass which has been lithographically patterned is cleaned and dried, and fixed on the rubberizing machine, and the solution of the light-emitting layer material prepared above is uniformly coated on the above-mentioned indium tin oxide conductive glass at a rotation speed of 2000 rpm. Under spin coating for 50s, a layer of liquid layer of light-emitting layer with a thickness of 20nm is formed on the surface of the indium tin oxide conductive glass; in a nitrogen atmosphere, the indium tin oxide conductive glass is placed in a dry box and dried at room temperature to complete the light emission. Preparation of layers.
  • the obtained luminescent layer film was subjected to an atomic force microscope (AFM) test, and the results are shown in Figs. 1 and 3.
  • AFM atomic force microscope
  • the preparation of the remaining functional layers is then carried out, for example, by transfer to a metal chamber for cathodic evaporation.
  • the preparation method of the above remaining functional layers is in the prior art, and will not be further described herein.
  • the organic electroluminescent device prepared above was subjected to luminescence performance test, and the results are shown in Figs. 5 and 6.
  • the above-mentioned organic electroluminescent device and other necessary parts of the display device are further prepared to form a display device, and the other necessary parts of the display device are prepared in the prior art, and are not described again.
  • Example 1
  • the embodiment provides a method for preparing an organic electroluminescent device, which comprises preparing a functional layer of the organic electroluminescent device by a solution method.
  • a method for preparing a light-emitting layer by a solution method is introduced as an example, and the following steps are included:
  • the solution of the luminescent layer material prepared above is fixed on the above-mentioned indium tin oxide conductive glass, and is spin-coated at 2000 rpm for 50 s to form a thickness on the surface of the indium tin oxide conductive glass.
  • the resulting luminescent layer film was subjected to atomic force microscopy (AFM) and the results are shown in Figures 2 and 4.
  • AFM atomic force microscopy
  • the vacuum constant temperature drying is relatively dry at normal temperature, because the molecular motion of the organic solvent molecules is more intense under heating (90 ° C), and it is easy to volatilize; meanwhile, due to vacuum conditions It is beneficial to the volatilization and extraction of organic solvent molecules, so that the organic solvent is quickly removed and the removal is thorough.
  • the luminescent layer film which is dried by vacuum constant temperature is relatively dense, can effectively remove residual organic solvent and avoid formation defects, so that the film becomes flat and dense, and the mobility of carriers in the film is improved, which is favorable for electrons and air.
  • the transmission and recombination of the hole is relatively dense, can effectively remove residual organic solvent and avoid formation defects, so that the film becomes flat and dense, and the mobility of carriers in the film is improved, which is favorable for electrons and air.
  • the preparation of the remaining functional layers is then carried out, for example, by transfer to a metal chamber for cathodic evaporation.
  • the preparation method of the above remaining functional layers is in the prior art, and will not be further described herein.
  • the organic electroluminescent device prepared above was subjected to luminescence performance test, and the results are shown in Figs. 5 and 6.
  • the organic electrolysis obtained by vacuum constant temperature drying treatment (labeled at 90 degree annealing) of the present embodiment
  • the current density of the light-emitting device is larger, indicating that the annealing treatment improves the carrier transport performance of the light-emitting layer and enhances the fusion of host-guest molecules.
  • the above-mentioned organic electroluminescent device and other necessary parts of the display device are further prepared to form a display device, and other necessary parts of the display device are prepared in the prior art, and are not described herein again.
  • the embodiment provides a method for preparing an organic electroluminescent device, which comprises preparing a functional layer of the organic electroluminescent device by a solution method.
  • a method for preparing a light-emitting layer by a solution method is introduced as an example, and the following steps are included:
  • the indium tin oxide conductive glass which has been lithographically patterned is cleaned and dried, and fixed on the rubberizing machine, and the solution of the light-emitting layer material prepared above is uniformly coated on the above-mentioned indium tin oxide conductive glass at a rotation speed of 2000 rpm.
  • a layer of liquid layer of luminescent layer with a thickness of 20nm is formed on the surface of the indium tin oxide conductive glass; in a nitrogen atmosphere, the indium tin oxide conductive glass is placed in a vacuum drying oven at 120 ° C
  • the temperature of the luminescent layer was prepared by drying at a constant temperature of 10 minutes.
  • the preparation of the remaining functional layers is then carried out, for example, by transfer to a metal chamber for cathodic evaporation.
  • the preparation method of the above remaining functional layers is in the prior art, and will not be further described herein.
  • the organic electroluminescent device prepared above was subjected to luminescence performance test, and the results are shown in Figs. 5 and 6.
  • the current density of the organic electroluminescent device prepared by annealing at 120 degrees is greater, indicating that the annealing treatment improves the carrier transport performance of the light-emitting layer and enhances the fusion of host-guest molecules.
  • the above-mentioned organic electroluminescent device and other necessary parts of the display device are further prepared to form a display device, and the other necessary parts of the display device are prepared in the prior art, and are not described again.
  • Example 3
  • the embodiment provides a method for preparing an organic electroluminescent device, which comprises preparing a functional layer of the organic electroluminescent device by a solution method.
  • a method for preparing a light-emitting layer by a solution method is introduced as an example, and the following steps are included:
  • the indium tin oxide conductive glass which has been lithographically patterned is cleaned and dried, and fixed on the rubberizing machine, and the solution of the light-emitting layer material prepared above is uniformly coated on the above-mentioned indium tin oxide conductive glass at a rotation speed of 2000 rpm.
  • a layer of liquid layer of light-emitting layer with a thickness of 20nm is formed on the surface of the indium tin oxide conductive glass; in a nitrogen atmosphere, the indium tin oxide conductive glass is placed in a vacuum drying oven at 150 ° C
  • the temperature of the luminescent layer was prepared by drying at a constant temperature of 10 minutes.
  • the preparation of the remaining functional layers is then carried out, for example, by transfer to a metal chamber for cathodic evaporation.
  • the preparation method of the above remaining functional layers is in the prior art, and will not be further described herein.
  • the organic electroluminescent device prepared above was subjected to luminescence performance test, and the results are shown in Figs. 5 and 6.
  • the vacuum constant temperature drying process of the present embodiment is marked (marked as The brightness of the organic electroluminescent device prepared by annealing at 150 degrees is higher, indicating that the annealing treatment improves the luminous efficiency of the light-emitting layer and improves the light-emitting property of the light-emitting layer.
  • the above-mentioned organic electroluminescent device and other necessary parts of the display device are further prepared to form a display device, and the other necessary parts of the display device are prepared in the prior art, and are not described again.
  • the invention solves the film prepared by the solution method by performing vacuum constant temperature drying of the functional layer liquid material layer at different temperatures when preparing the light-emitting layer film by the solution method, thereby achieving the purpose of removing the residual solvent of the light-emitting layer and avoiding defects of the functional layer.
  • the present embodiment provides a method for preparing an organic electroluminescent device, which comprises preparing a functional layer of the organic electroluminescent device by a solution method.
  • a hole injection layer, a hole transport layer, and a hole transport layer are prepared by a solution method.
  • the light-emitting layer, the electron transport layer, and the electron injection layer are introduced as an example, and the following steps are included:
  • Step 1 Preparation of hole injection layer
  • the poly(3,4-ethylenedioxythiophene/polystyrene sulfonate) was weighed in a glove box under nitrogen atmosphere, and dissolved in an organic solvent, tetrachlorosilane, and mixed to obtain a mass concentration of 10 mg/ml.
  • a solution of the hole injecting layer material was weighed in a glove box under nitrogen atmosphere, and dissolved in an organic solvent, tetrachlorosilane, and mixed to obtain a mass concentration of 10 mg/ml.
  • the indium tin oxide conductive glass which has been lithographically patterned is cleaned and dried, and fixed on the rubberizing machine, and the solution of the hole injecting layer material prepared above is hooked up.
  • spin-coating at a rotation speed of 2300 rpm for 50 s, forming a liquid layer of a hole injection layer having a thickness of 23 nm on the surface of the indium tin oxide conductive glass; and indium tin oxide under a nitrogen atmosphere
  • the conductive glass was placed in a vacuum drying oven, and the preparation of the hole injection layer was completed by drying at 70 ° C for 14 min at a constant temperature.
  • the conductive glass which completed the preparation of the hole injection layer in step 1 is fixed on the rubberizing machine, and the solution of the hole transport layer material prepared above is hooked on the hole injection layer of the above conductive glass, and is rotated at a rotation speed of 2200 rpm. After coating for 60 s, a layer of liquid transport layer of hole transport layer having a thickness of 28 nm was formed on the surface of the hole injection layer; in the nitrogen atmosphere, the above conductive glass was placed in a vacuum drying oven and dried at 110 ° C for 13 min at a constant temperature. The preparation of the hole transport layer is completed.
  • ⁇ , ⁇ '-bis(1-naphthyl)-indole, ⁇ '-diphenyl-fluorene, fluorene-biphenyl-4-4'-diamine were weighed as a host material.
  • 2-(4-pyridylphenyl)pyridine as a guest material, and dissolved in tetrachlorosilane in an organic solvent, and the solution is ruthenium and iridium according to 2-(4-pyridylphenyl)pyridine.
  • the conductive glass which completes the preparation of the hole transport layer in step 2 is fixed on the glue coater, and the solution of the light-emitting layer material prepared above is hook-coated on the hole transport layer of the above-mentioned conductive glass, and is spin-coated at a rotational speed of 2800 rpm for 52 s.
  • the preparation of the luminescent layer is completed.
  • 8-hydroxyquinoline aluminum was weighed and dissolved in an organic solvent tetrahydrofuran, and mixed to obtain a solution of an electron transport layer material having a mass concentration of 18 mg/ml.
  • the conductive glass prepared by the step 3 is fixed on the rubberizing machine, and the solution of the electron transport layer material prepared above is hook-coated on the above-mentioned light-emitting layer, and spin-coated at a rotation speed of 2000 rpm for 55 seconds to form a surface of the light-emitting layer.
  • lithium 8-hydroxyquinolate was weighed and dissolved in an organic solvent chlorobenzene, and mixed to obtain a solution having a mass concentration of 5 mg/ml of the electron injecting layer material.
  • the conductive glass prepared by the electron transport layer in step 4 is fixed on the rubberizing machine, and the solution of the electron injecting layer material prepared above is hooked on the above electron transport layer, and spin-coated at a rotational speed of 2500 rpm for 60 s in the electron transport layer.
  • a layer of liquid material of an electron injecting layer having a thickness of 20 nm is formed thereon; the conductive glass is placed in a vacuum drying oven under a nitrogen atmosphere, and dried at 150 ° C for 10 minutes to complete the preparation of the electron injecting layer.
  • the preparation of the remaining functional layers is then carried out, for example, by transfer to a metal chamber for cathodic evaporation.
  • the preparation method of the above remaining functional layers is in the prior art, and will not be further described herein.
  • the above functional layer one or several of them may be selected according to specific application conditions.
  • the above-mentioned solution method can also be applied by spin coating. The way to replace it.
  • the main material of the solution of the light-emitting layer may be selected from coal-based polyaniline, and the guest material may be selected from benzoquinoline.
  • the solution of the luminescent layer material is prepared by mixing 18% by mass of benzoquinoline hydrazine and coal-based polyaniline; the solution of the electron transport layer material can be selected from 4,7-diphenyl-1,10-o A solution of phenanthroline in tetrahydrofuran, the mass concentration of the solution can be selected as 20 mg/ml.
  • the organic electroluminescent device and other necessary parts of the display device are further prepared to form a display device, and the other necessary parts of the display device are prepared in the prior art, and are not described herein again. .
  • the temperature of the vacuum drying in the present invention can be adjusted according to the properties of the material of the functional layer to be treated; in addition, the staged constant temperature drying in the temperature range of 70 ° C to 150 ° C also belongs to the present invention.
  • the protection range for example, is dried at a constant temperature of 130 ° C for a period of time, then dried at 110 ° C for a period of time, then dried at 90 ° C for a period of time, and the like, and a similar staged ' I ⁇ temperature treatment.

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Abstract

一种有机电致发光器件及其制备方法、显示装置，该制备方法包括采用以下步骤制备至少一个功能层：形成功能层材料的溶液，并用功能层材料的溶液形成功能层材料的溶液层；对功能层材料的溶液层真空干燥，形成功能层。通过对功能层的真空干燥处理形成比较致密的薄膜，有效的清除残留的有机溶剂及避免形成缺陷，使得薄膜变得平整而致密，提高了薄膜的迀移率，这样有利于电子和空穴的传输和复合，从而提高了有机电致发光器件和含有该有机电致发光器件的显示装置的发光性能和使用寿命。

Description

有机电致发光器件及其制备方法、 显示装置 技术领域
本发明属于显示技术领域， 具体涉及有机电致发光器件及其 制备方法和含有该有机电致发光器件的显示装置。 背景技术
釆用溶液法制备有机电致发光器件的功能层 （例如空穴注入 层、 空穴传输层、 发光层、 电子传输层、 电子注入层） 的方法包 括： 先将功能层的材料组分制成溶液， 然后将溶液旋涂或喷涂形 成相应的功能层， 之后常温干燥。 在上述功能层的干燥成膜制备 工艺过程中会产生溶剂残留， 从而导致功能层致密性差、 不均匀、 易产生缺陷， 尤其当所述的功能层为发光层时， 掺杂体系的主客 体分子易团聚， 不能很好的融合， 从而影响主客体材料之间的能 量传递和载流子传输性能。 发明内容
本发明的目的是解决现有溶液法制备有机电致发光器件的功 能层出现的溶剂残留、 功能层产生缺陷的问题， 提供一种有机电 致发光器件的制备方法。
解决本发明技术问题所釆用的技术方案是一种有机电致发光 器件的制备方法， 包括釆用以下步骤制备至少一个功能层： 形成 功能层材料的溶液， 并用功能层材料的溶液形成功能层液状材料 层； 对功能层液状材料层真空干燥， 形成功能层。
真空干燥相对常温干燥， 由于有机溶剂分子在加热的情况下 分子运动更加剧烈， 易于挥发； 同时， 由于真空条件更加有利于 有机溶剂分子挥发和抽出， 使得有机溶剂快速地得到清除， 且清 除比较彻底。 经过真空恒温干燥处理的发光层薄膜比较致密， 可 以有效的清除残留的有机溶剂及避免形成缺陷， 使得薄膜变得平 整而致密， 提高了薄膜中载流子的迁移率， 这样有利于电子和空 穴的传输和复合。
优选的是， 所述的真空干燥为真空恒温干燥。
优选的是， 所述的真空干燥的处理时间被分成多个时间段， 每个时间段内的真空干燥为真空恒温干燥， 以及多个时间段中的 至少一个时间段内的真空干燥的温度与其他时间段中的不同。
进一步优选的是， 所述的真空干燥的温度在 70°C -150°C的范 围内。
优选的是， 所述的真空干燥的处理时间为 10min-20min。
优选的是， 所述的功能层包括空穴注入层、 空穴阻挡层、 发 光层、 电子传输层、 电子注入层中的任意一种或几种。
优选的是， 所述的功能层包括发光层， 所述的发光层的溶液 组分包括金属配合物的磷光材料和主体材料。
进一步优选的是， 所述的金属配合物的磷光材料为铱配合物 材料； 所述的铱配合物材料为三 (2-苯基吡啶)合铱、 2-(4-曱苯基) 吡啶合铱、 苯并喹啉合铱中的任意一种。
进一步优选的是， 所述的主体材料为间二 (N-咔唑基)苯、 聚 乙烯咔唑、 1,2,4-三唑、 Ν,Ν'-二（1-萘基) -Ν,Ν'-二苯基 -Ι,Γ-联苯 -4-4'- 二胺、 煤基聚苯胺中的任意一种。
本发明的另一个目的是解决现有有机电致发光器件由于制作 过程中溶剂残留、 功能层产生缺陷等导致的发光性能差的问题， 提供一种发光性能好的有机电致发光器件， 所述的有机电致发光 器件是釆用上述的有机电致发光器件的制备方法制备的。
本发明的另一个目的提供一种发光效率高、 使用寿命长的显 示装置， 所述的显示装置包括上述的有机电致发光器件。
本发明的有机电致发光器件的制备方法通过在形成功能层时 对功能层液状材料层进行的真空干燥处理形成了比较致密的功能 层薄膜， 可以有效的清除残留的有机溶剂及避免形成缺陷， 使得 功能层薄膜变得平整而致密， 提高了薄膜中载流子的迁移率， 这 样有利于电子和空穴的传输和复合； 尤其当所述的功能层为发光 层时， 掺杂体系的主客体分子能很好的融合从而提高主客体材料 之间的能量传递和载流子传输性能， 进而提高了有机电致发光器 件和含有该有机电致发光器件的显示装置的发光性能和使用寿 命。 附图说明 结果图。
图 2为本发明实施例 1制得的发光层的原子力显微镜测试结 果图。 中相位图。
图 4为本发明实施例 1制得的发光层的原子力显微镜测试中 相位图。
图 5为本发明实施例 1、 2、 3和对比实施例制得的发光层在 相同的电压下的亮度测试结果图。
图 6为本发明实施例 1、 2、 3和对比实施例制得的发光层在 相同的电压下的电流密度测试结果图。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结 合附图和具体实施方式对本发明作进一步详细描述。 对比实施例
本对比实施例提供一种有机电致发光器件的制备方法， 包括 釆用溶液法制备所述有机电致发光器件的功能层， 本对比实施例 以溶液法制备发光层为例进行介绍， 包括以下步骤：
1.发光层材料的溶液的制备
在氮气氛围的手套箱中， 称量作为主体材料的间二 (N-咔唑基) 苯和作为客体材料的三 (2-苯基吡啶)合铱， 并将其分别溶解于有机 溶剂四氯曱烷中， 将上述溶液按三 (2-苯基吡啶)合铱和间二 (N-咔 唑基)苯的质量百分比为 5%进行混合制得发光层材料的溶液。
2.发光层的制备
将光刻好特定图形的铟锡氧化物导电玻璃清洗干净并烘干， 固定在勾胶机上， 将上述制备的发光层材料的溶液均匀涂满上述 的铟锡氧化物导电玻璃上， 在转速 2000rpm下旋涂 50s, 在铟锡氧 化物导电玻璃表面形成一层厚度为 20nm的发光层液状材料层；在 氮气环境下， 将铟锡氧化物导电玻璃放入干燥箱中在常温下干燥， 完成发光层的制备。
将制得的发光层薄膜进行原子力显微镜（AFM ) 测试， 结果 见图 1和 3。
接着进行其余功能层的制备， 例如， 转移到金属腔进行阴极 蒸镀。 上述其余功能层的制备方法为现有技术范畴， 在此不再一 一赘述。
将上述制得的有机电致发光器件进行发光性能测试， 结果见 图 5和图 6。
可选的， 进一步制备上述的有机电致发光器件和显示装置其 它的必须部分， 以形成显示装置， 上述显示装置其它的必须部分 的制备方法为现有技术范畴， 在此不再——赘述。 实施例 1
本实施例提供一种有机电致发光器件的制备方法， 包括釆用 溶液法制备所述有机电致发光器件的功能层， 本实施例以溶液法 制备发光层为例进行介绍， 包括以下步骤：
1.发光层材料的溶液的制备
在氮气氛围的手套箱中， 称量作为主体材料的间二 (N-咔唑基) 苯和作为客体材料的三 (2-苯基吡啶)合铱， 并将其分别溶解于有机 溶剂四氯曱烷中， 将上述溶液按三 (2-苯基吡啶)合铱和间二 (N-咔 唑基)苯的质量百分比为 5%进行混合制得发光层材料的溶液。
2.发光层的制备
将光刻好特定图形的铟锡氧化物导电玻璃清洗干净并烘干， 固定在勾胶机上， 将上述制备的发光层材料的溶液均勾涂满上述 的铟锡氧化物导电玻璃上， 在转速 2000rpm下旋涂 50s, 在铟锡氧 化物导电玻璃表面形成一层厚度为 20nm的发光层液状材料层；在 氮气环境下， 将铟锡氧化物导电玻璃放入真空干燥箱中， 在 90 °C 下， 恒温干燥 lOmin完成发光层的制备。
将制得的发光层薄膜进行原子力显微镜（AFM ) 测试， 结果 见图 2和 4。 由图 1和图 2对比可知， 相对于对比实施例， 真空恒 温干燥相对常温干燥， 由于有机溶剂分子在加热 （90 °C ) 的情况 下分子运动更加剧烈， 易于挥发； 同时， 由于真空条件更加有利 于有机溶剂分子挥发和抽出， 使得有机溶剂快速的得到清除， 且 清除比较彻底。 经过真空恒温干燥处理的发光层薄膜比较致密， 可以有效的清除残留的有机溶剂及避免形成缺陷， 使得薄膜变得 平整而致密， 提高了薄膜中载流子的迁移率， 这样有利于电子和 空穴的传输和复合。
由图 3和图 4对比可知， 发光层薄膜经真空恒温干燥后主客 体材料的融合程度更好， 有利于形成性能较好的有机电致发光器 件。
接着进行其余功能层的制备， 例如， 转移到金属腔进行阴极 蒸镀。 上述其余功能层的制备方法为现有技术范畴， 在此不再一 一赘述。
将上述制得的有机电致发光器件进行发光性能测试， 结果见 图 5和图 6。
由图 5可见， 在相同的电压下， 相对于对比实施例 （图中标 记为未退火） ， 经过本实施例的真空恒温干燥处理 （图中标记为 90度下退火） 制得的有机电致发光器件的亮度更高， 说明退火处 理提高了发光层的发光效率， 改善了发光层的发光性能。
由图 6可见， 在相同的电压下， 相对于对比实施例 （图中标 记为未退火） ， 经过本实施例的真空恒温干燥处理 （图中标记为 90度下退火） 制得的有机电致发光器件的电流密度更大， 说明退 火处理提高了发光层的载流子传输性能， 增强主客体分子的融合。 可选的， 进一步制备上述的有机电致发光器件和显示装置其 它的必须部分， 以形成显示装置， 上述显示装置其它的必须部分 的制备方法为现有技术范畴， 在此不再——赘述。 实施例 2
本实施例提供一种有机电致发光器件的制备方法， 包括釆用 溶液法制备所述有机电致发光器件的功能层， 本实施例以溶液法 制备发光层为例进行介绍， 包括以下步骤：
1.发光层材料的溶液的制备
在氮气氛围的手套箱中， 称量作为主体材料的间二 (N-咔唑基) 苯和作为客体材料的三 (2-苯基吡啶)合铱， 并将其分别溶解于有机 溶剂四氯曱烷中， 将上述溶液按三 (2-苯基吡啶)合铱和间二 (N-咔 唑基)苯的质量百分比为 5%进行混合制得发光层材料的溶液。
2.发光层的制备
将光刻好特定图形的铟锡氧化物导电玻璃清洗干净并烘干， 固定在勾胶机上， 将上述制备的发光层材料的溶液均匀涂满上述 的铟锡氧化物导电玻璃上， 在转速 2000rpm下旋涂 50s, 在铟锡氧 化物导电玻璃表面形成一层厚度为 20nm的发光层液状材料层；在 氮气环境下， 将铟锡氧化物导电玻璃放入真空干燥箱中， 在 120°C 下， 恒温干燥 lOmin完成发光层的制备。
接着进行其余功能层的制备， 例如， 转移到金属腔进行阴极 蒸镀。 上述其余功能层的制备方法为现有技术范畴， 在此不再一 一赘述。
将上述制得的有机电致发光器件进行发光性能测试， 结果见 图 5和图 6。
由图 5可见， 在相同的电压下， 相对于对比实施例 （图中标 记为未退火） ， 经过本实施例的真空恒温干燥处理 （图中标记为 120度下退火）制得的有机电致发光器件的亮度更高，说明退火处 理提高了发光层的发光效率， 改善了发光层的发光性能。
由图 6可见， 在相同的电压下， 相对于对比实施例 （图中标 记为未退火） ， 经过本实施例的真空恒温干燥处理 （图中标记为
120度下退火）制得的有机电致发光器件的电流密度更大，说明退 火处理提高了发光层的载流子传输性能， 增强主客体分子的融合。
可选的， 进一步制备上述的有机电致发光器件和显示装置其 它的必须部分， 以形成显示装置， 上述显示装置其它的必须部分 的制备方法为现有技术范畴， 在此不再——赘述。 实施例 3
本实施例提供一种有机电致发光器件的制备方法， 包括釆用 溶液法制备所述有机电致发光器件的功能层， 本实施例以溶液法 制备发光层为例进行介绍， 包括以下步骤：
1.发光层材料的溶液的制备
在氮气氛围的手套箱中， 称量作为主体材料的间二 (Ν-咔唑基) 苯和作为客体材料的三 (2-苯基吡啶)合铱， 并将其分别溶解于有机 溶剂四氯曱烷中， 将上述溶液按三 (2-苯基吡啶)合铱和间二 (Ν-咔 唑基)苯的质量百分比为 5%进行混合制得发光层材料的溶液。
2.发光层的制备
将光刻好特定图形的铟锡氧化物导电玻璃清洗干净并烘干， 固定在勾胶机上， 将上述制备的发光层材料的溶液均匀涂满上述 的铟锡氧化物导电玻璃上， 在转速 2000rpm下旋涂 50s, 在铟锡氧 化物导电玻璃表面形成一层厚度为 20nm的发光层液状材料层；在 氮气环境下， 将铟锡氧化物导电玻璃放入真空干燥箱中， 在 150°C 下， 恒温干燥 lOmin完成发光层的制备。
接着进行其余功能层的制备， 例如， 转移到金属腔进行阴极 蒸镀。 上述其余功能层的制备方法为现有技术范畴， 在此不再一 一赘述。
将上述制得的有机电致发光器件进行发光性能测试， 结果见 图 5和图 6。
由图 5可见， 在相同的电压下， 相对于对比实施例 （图中标 记为未退火） ， 经过本实施例的真空恒温干燥处理 （图中标记为 150度下退火）制得的有机电致发光器件的亮度更高，说明退火处 理提高了发光层的发光效率， 改善了发光层的发光性能。
由图 6可见， 在相同的电压下， 相对于对比实施例 （图中标 记为未退火） ， 经过本实施例的真空恒温干燥处理 （图中标记为 150度下退火）制得的有机电致发光器件的电流密度更大，说明退 火处理提高了发光层的载流子传输性能， 增强主客体分子的融合。
可选的， 进一步制备上述的有机电致发光器件和显示装置其 它的必须部分， 以形成显示装置， 上述显示装置其它的必须部分 的制备方法为现有技术范畴， 在此不再——赘述。
本发明通过在利用溶液法制备发光层薄膜时对功能层液状材 料层实施不同温度的真空恒温干燥， 达到了清除发光层残留溶剂、 避免功能层产生缺陷的目的， 从而解决了溶液法制备的薄膜致密 性差和不均匀的问题； 尤其当所述的功能层为发光层时， 掺杂体 系的主客体分子能很好的融合从而提高主客体材料之间的能量传 递和载流子传输性能， 进而提高了有机电致发光器件载流子传输 性能、 发光性能、 并延长了器件的使用寿命。 实施例 4
本实施例提供一种有机电致发光器件的制备方法， 包括釆用 溶液法制备所述有机电致发光器件的各功能层， 本实施例以溶液 法制备空穴注入层、 空穴传输层、 发光层、 电子传输层、 电子注 入层为例进行介绍， 包括以下步骤：
步骤 1 , 空穴注入层的制备
1.1空穴注入层材料的溶液的制备
在氮气氛围的手套箱中， 称量聚 3 , 4-乙撑二氧噻吩 /聚苯乙 烯磺酸盐， 并将其溶解于有机溶剂四氯曱烷中， 混合制得质量浓 度为 10mg/ml的空穴注入层材料的溶液。
1.2空穴注入层的制备
将光刻好特定图形的铟锡氧化物导电玻璃清洗干净并烘干， 固定在勾胶机上， 将上述制备的空穴注入层材料的溶液均勾涂满 上述的铟锡氧化物导电玻璃上， 在转速 2300rpm下旋涂 50s,在铟 锡氧化物导电玻璃表面形成一层厚度为 23nm 空穴注入层液状材 料层； 在氮气环境下， 将铟锡氧化物导电玻璃放入真空干燥箱中， 在 70°C下， 恒温干燥 14min完成空穴注入层的制备。
步骤 2 , 空穴传输层的制备
2.1空穴传输层材料的溶液的制备
在氮气氛围的手套箱中， 称量聚 Ν,Ν'-二 (1-萘基) -Ν,Ν'-二苯 基 -1,1，-联苯 -4-4，-二胺， 并将其溶解于有机溶剂氯苯中， 混合制得 质量浓度为 15mg/ml的空穴传输层材料的溶液。
2.2空穴传输层的制备
将步骤 1 完成空穴注入层的制备的导电玻璃固定在勾胶机 上， 将上述制备的空穴传输层材料的溶液均勾涂满上述的导电玻 璃的空穴注入层上， 在转速 2200rpm下旋涂 60s, 在空穴注入层表 面形成一层厚度为 28nm 的空穴传输层液状材料层； 在氮气环境 下， 将上述的导电玻璃放入真空干燥箱中， 在 110 °C下， 恒温干燥 13min完成空穴传输层的制备。
步骤 3 , 发光层的制备
3.1发光层材料的溶液的制备
在氮气氛围的手套箱中， 称量作为主体材料的 Ν,Ν'-二（1-萘 基) -Ν,Ν'-二苯基 -Ι,Γ-联苯 -4-4'-二胺和作为客体材料的 2-(4-曱苯 基)吡啶合铱， 并将其分别溶解于有机溶剂四氯曱烷中， 将上述溶 液按 2-(4-曱苯基)吡啶合铱和 Ν,Ν'-二（1-萘基) -Ν,Ν'-二苯基 -Ι,Γ-联 苯 -4-4'-二胺的质量百分比为 16%进行混合制得发光层材料的溶 液。
3.2发光层的制备
将步骤 2 完成空穴传输层的制备的导电玻璃固定在勾胶机 上， 将上述制备的发光层材料的溶液均勾涂满上述的导电玻璃的 空穴传输层上， 在转速 2800rpm下旋涂 52s, 在空穴传输层的表面 形成一层厚度为 30nm的发光层液状材料层； 在氮气环境下，将上 述的导电玻璃放入真空干燥箱中， 在 100°C下， 恒温干燥 20min 完成发光层的制备。
步骤 4 , 电子传输层的制备
4.1电子传输层溶液的制备
在氮气氛围的手套箱中， 称量 8-羟基喹啉铝， 并将其溶解于 有机溶剂四氢呋喃中， 混合制得质量浓度为 18mg/ml的电子传输 层材料的溶液。
4.2电子传输层的制备
将步骤 3完成发光层制备的导电玻璃固定在勾胶机上， 将上 述制备的电子传输层材料的溶液均勾涂满上述的发光层上， 在转 速 2000rpm下旋涂 55s, 在发光层的表面形成一层厚度为 24nm的 电子传输层液状材料层； 在氮气环境下， 将上述的导电玻璃放入 真空干燥箱中， 在 90 °C下， 恒温干燥 19min完成电子传输层的制 备。
步骤 5 , 电子注入层的制备
5.1电子注入层溶液的制备
在氮气氛围的手套箱中， 称量 8-羟基喹啉锂， 并将其溶解于 有机溶剂氯苯中，混合制得质量浓度为 5mg/ml电子注入层材料的 溶液。
5.2电子注入层的制备
将步骤 4完成电子传输层制备的导电玻璃固定在勾胶机上， 将上述制备的电子注入层材料的溶液均勾涂满上述的电子传输层 上， 在转速 2500rpm下旋涂 60s, 在电子传输层上形成一层厚度为 20nm的电子注入层液状材料层； 在氮气环境下， 将上述的导电玻 璃放入真空干燥箱中， 在 150 °C下， 恒温干燥 lOmin, 完成电子注 入层的制备。
接着进行其余功能层的制备， 例如， 转移到金属腔进行阴极 蒸镀。 上述其余功能层的制备方法为现有技术范畴， 在此不再一 一赘述。
可以理解的是， 对于上述功能层， 可以根据具体的应用情况 选择其中的一种或几种。 上述的溶液法中的旋涂也可以釆用喷涂 的方式代替。 对于上述各功能层材料的溶液， 可以根据具体应用 需要选择现有技术的其它组分， 例如， 发光层的溶液的主体材料 的可以选煤基聚苯胺， 客体材料可以选苯并喹啉合铱， 按苯并喹 啉合铱和煤基聚苯胺的质量百分比为 18%进行混合制得发光层材 料的溶液； 电子传输层材料的溶液可以选 4,7-二苯基 -1,10-邻二氮 杂菲的四氢呋喃溶液， 溶液的质量浓度可以选 20mg/ml。
可选的， 进一步制备上述的有机电致发光器件和显示装置的 其它的必须部分， 以形成显示装置， 上述显示装置其它的必须部 分的制备方法为现有技术范畴， 在此不再——赘述。
可以理解的是， 本发明中的真空干燥的温度可根据待处理的 功能层的材料的性质进行调整； 另外， 在 70 °C -150 °C的温度范围 内的分阶段恒温干燥也属于本发明的保护范围， 例如， 在 130 °C下 恒温干燥一段时间， 然后在 110 °C下恒温干燥一段时间， 接着在 90 °C下恒温干燥一段时间等类似的分阶段的' I"亘温处理。
而釆用的示例性实施方式， 然而本发明并不局限于此。 对于本领 域内的普通技术人员而言， 在不脱离本发明的精神和实质的情况 下， 可以做出各种变型和改进， 这些变型和改进也视为本发明的 保护范围。

Claims

权 利 要 求 书
1.一种有机电致发光器件的制备方法， 其特征在于， 包括釆 用以下步骤制备至少一个功能层：
形成功能层材料的溶液， 并用功能层材料的溶液形成功能层 液状材料层； 以及
对功能层液状材料层真空干燥， 形成功能层。
2.如权利要求 1 所述的有机电致发光器件的制备方法， 其特 征在于， 所述的真空干燥为真空恒温干燥。
3.如权利要求 1 所述的有机电致发光器件的制备方法， 其特 征在于， 所述的真空干燥的处理时间被分成多个时间段， 每个时 间段内的真空干燥为真空恒温干燥， 以及多个时间段中的至少一 个时间段内的真空干燥的温度与其他时间段中的不同。
4.如权利要求 1 至 3任一项所述的有机电致发光器件的制备 方法， 其特征在于， 所述的真空干燥的温度在 70 °C -150 °C的范围 内。
5.如权利要求 1-4 任一项所述的有机电致发光器件的制备方 法， 其特征在于， 所述的真空干燥的处理时间为 10min-20min。
6.如权利要求 1-5 任一项所述的有机电致发光器件的制备方 法， 其特征在于， 所述的功能层包括空穴注入层、 空穴阻挡层、 电子传输层、 电子注入层中的任意一种或几种。
7.如权利要求 1-5 任一项所述的有机电致发光器件的制备方 法， 其特征在于， 所述的功能层包括发光层或者发光层与空穴注 入层、 空穴阻挡层、 电子传输层、 电子注入层中的任意一种或几 种。
8.如权利要求 7 所述的有机电致发光器件的制备方法， 其特 征在于， 所述的发光层的溶液组分包括金属配合物的磷光材料和 主体材料。
9.如权利要求 8 所述的有机电致发光器件的制备方法， 其特 征在于， 所述的金属配合物的磷光材料为铱配合物材料； 所述的 铱配合物材料为三 (2-苯基吡啶)合铱、 2-(4-曱苯基)吡啶合铱、 苯 并喹啉合铱中的任意一种。
10.如权利要求 8或 9所述的有机电致发光器件的制备方法， 其特征在于， 所述的主体材料为间二 (N-咔唑基)苯、 聚乙烯咔唑、 1,2,4-三峻、 Ν,Ν'-二（1-萘基) -Ν,Ν'-二苯基 -Ι,Γ-联苯 -4-4'-二胺、 煤 基聚苯胺中的任意一种。
11.一种有机电致发光器件， 其特征在于， 所述的有机电致发 光器件是釆用如权利要求 1-10任一项所述的有机电致发光器件的 制备方法制备的。
12.—种显示装置， 包括如权利要求 11 所述的有机电致发光 器件。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474584B (zh) * 2013-09-29 2016-01-06 京东方科技集团股份有限公司 有机电致发光器件及其制备方法、显示装置
DE102014016825B4 (de) * 2014-11-13 2023-06-29 Audi Ag Kraftfahrzeug-Ladedose mit Überhitzungsschutz
CN107238922A (zh) * 2017-07-14 2017-10-10 京东方科技集团股份有限公司 在电湿润显示基板中填充油墨的方法及制备电湿润显示面板的方法
US10868259B2 (en) 2018-05-30 2020-12-15 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for manufacturing OLED light-emitting material
CN108641707B (zh) * 2018-05-30 2020-04-10 武汉华星光电半导体显示技术有限公司 Oled发光材料的制备方法
US11737343B2 (en) 2018-09-17 2023-08-22 Excyton Limited Method of manufacturing perovskite light emitting device by inkjet printing
CN111384265B (zh) * 2018-12-29 2021-07-06 Tcl科技集团股份有限公司 量子点发光二极管的制备方法
CN111384308B (zh) * 2018-12-29 2021-05-28 Tcl科技集团股份有限公司 量子点发光二极管的制备方法
CN110993831A (zh) * 2019-11-29 2020-04-10 香港大学深圳研究院 一种基于铂配合物的有机发光器件的湿法制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1691849A (zh) * 2004-04-26 2005-11-02 精工爱普生株式会社 有机el元件和其制造方法
CN101383401A (zh) * 2008-10-13 2009-03-11 彩虹集团公司 一种聚合物有机发光二极管的制备方法
CN102362338A (zh) * 2009-03-09 2012-02-22 E.I.内穆尔杜邦公司 形成电活性层的方法
CN103474584A (zh) * 2013-09-29 2013-12-25 京东方科技集团股份有限公司 有机电致发光器件及其制备方法、显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW512646B (en) * 2000-03-31 2002-12-01 Seiko Epson Corp Organic EL device and production method thereof
CN101163359A (zh) * 2007-11-14 2008-04-16 清华大学 一种有机电致发光器件
US8207667B2 (en) * 2007-08-31 2012-06-26 Sharp Kabushiki Kaisha Organic EL display and manufacturing method thereof
JP5707058B2 (ja) * 2009-09-01 2015-04-22 ユー・ディー・シー アイルランド リミテッド 有機電界発光素子、有機電界発光素子の製造方法、表示装置及び照明装置
DE102010040908A1 (de) * 2010-09-16 2012-03-22 Robert Bosch Gmbh Drehratensensor
EP2645444B1 (en) * 2010-11-25 2018-04-25 Nippon Steel & Sumikin Chemical Co., Ltd. Organic electroluminescent element
WO2012096352A1 (ja) * 2011-01-14 2012-07-19 三菱化学株式会社 有機電界発光素子、有機電界発光素子用組成物、及び有機電界発光装置
JP5901325B2 (ja) * 2011-03-30 2016-04-06 キヤノン株式会社 有機ｅｌ表示装置の製造方法
CN102807856B (zh) * 2011-06-01 2014-07-23 海洋王照明科技股份有限公司 含铱有机电致发光材料及其制备方法和有机电致发光器件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1691849A (zh) * 2004-04-26 2005-11-02 精工爱普生株式会社 有机el元件和其制造方法
CN101383401A (zh) * 2008-10-13 2009-03-11 彩虹集团公司 一种聚合物有机发光二极管的制备方法
CN102362338A (zh) * 2009-03-09 2012-02-22 E.I.内穆尔杜邦公司 形成电活性层的方法
CN103474584A (zh) * 2013-09-29 2013-12-25 京东方科技集团股份有限公司 有机电致发光器件及其制备方法、显示装置

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