WO2015035682A1 - 一种无硼氧化杜镁丝及其制造工艺 - Google Patents

一种无硼氧化杜镁丝及其制造工艺 Download PDF

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Publication number
WO2015035682A1
WO2015035682A1 PCT/CN2013/085461 CN2013085461W WO2015035682A1 WO 2015035682 A1 WO2015035682 A1 WO 2015035682A1 CN 2013085461 W CN2013085461 W CN 2013085461W WO 2015035682 A1 WO2015035682 A1 WO 2015035682A1
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free
boron
wire
oxygen
oxide
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PCT/CN2013/085461
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English (en)
French (fr)
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金家善
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Jin Jiashan
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/02—Layer formed of wires, e.g. mesh
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to the technical field of electronic glass sealing materials, in particular to a boron-free oxided magnesium wire and a manufacturing process thereof.
  • a glass package generally means that the outside of the semiconductor die of the diode is protected by a transparent glass enclosure, and the diode of the glass package can see the inside of the diode through the glass envelope.
  • boron-free oxidized du-magnesium wire is usually used. This kind of glass-sealing material has not been produced independently in China.
  • the annual market demand for boron-free oxidized du-magnesium wire is very large, and a large number of electronic manufacturing companies have been Dependent on imports.
  • the information disclosed by foreign manufacturers and related research institutions is only a brief introduction to the use and advantages of boron-free oxidized magnesium wire, and it is not possible to obtain substantial manufacturing techniques.
  • An object of the present invention is to provide a process for producing a boron-free oxidized magnesium wire, and a boron-free oxidized magnesium wire obtained by the process.
  • a manufacturing process of boron-free oxidized magnesium wire comprising the following steps:
  • the iron-nickel glass-sealed alloy and the oxygen-free copper strip are combined by a coating machine and welded by argon arc welding to form a metallurgical composite between the two layers of metal to form a metal wire having the same expansion coefficient as the glass;
  • the wire obtained in the step (2) is ultrasonically cleaned again, and is stretched by a precision wire drawing machine to form a wire of a predetermined diameter, and then the surface of the wire is polished;
  • the wire obtained in the step (3) is subjected to surface oxidation treatment in an oxidizing furnace to make a surface thereof Forming a uniform layer of copper oxide film;
  • the finished product of the magnesium alloy is wound and packaged by a precision layer around a plum bucket machine.
  • the temperature of the oxidation furnace for performing the surface oxidation treatment in the step (4) is controlled at 800 ° C to 1000 ° C, and the oxidation time is controlled to be 3 minutes to 5 minutes.
  • the gas introduced into the oxidation furnace includes helium gas and argon gas.
  • the gas flow rate into the oxidation furnace is as follows: helium gas 1000 ml/min, Argon gas 1500 ml / min, oxygen 1200 ml / min, hydrogen 1150 ml / min, nitrogen 150 ml / min.
  • a boron-free oxidized magnesium wire composed of an iron-nickel glass-sealed alloy and an oxygen-free copper tape, the oxygen-free copper tape being uniformly wrapped on the surface of the iron-nickel glass-sealed alloy, welded and stretched After that, the overall structure of the hermetic coating is formed.
  • the surface of the oxygen-free copper strip is further provided with a uniform, smooth, cuprous oxide glass sealing film layer.
  • the oxygen-free copper strip has a weight percentage of 16% to 22%.
  • the weight percentage of the oxygen-free copper strip is 19%, and the weight percentage of the iron-nickel glass-sealing alloy is 81%.
  • the boron-free oxidized magnesium wire has a diameter of less than or equal to 1.6 mm.
  • the invention has the beneficial effects that: compared with the prior art, the invention combines the iron-nickel glass-sealed alloy and the oxygen-free copper strip through a coating machine, and welds by argon arc welding to form a metallurgical composite between the two layers of metal. , replacing the traditional electroplating copper process to obtain boron-free oxidized dumagnesium wire with the same glass expansion coefficient.
  • the invention adopts a process of metallurgical compounding, welding, stretching, oxidation and reduction to obtain boron-free oxygen
  • the ruthenium wire is firmly connected and has a long anti-oxidation time.
  • the surface of the ruthenium wire has a uniform thickness, uniform color and smooth brick red cuprous oxide glass sealing film layer, which can fully satisfy the boron-free oxidation of magnesium in the high-end electronic glass sealing field.
  • Figure 1 is a schematic view of the structure of the present invention.
  • the manufacturing process of boron-free oxidized magnesium wire includes the following steps:
  • the iron-nickel glass-sealed alloy and the oxygen-free copper strip are combined by a coating machine and welded by argon arc welding to form a metallurgical composite between the two layers of metal to form a metal wire having the same expansion coefficient as the glass;
  • the wire obtained in the step (2) is ultrasonically cleaned again, and is stretched by a precision wire drawing machine to form a wire of a predetermined diameter, and then the surface of the wire is polished;
  • the wire obtained in the step (3) is subjected to surface oxidation treatment in an oxidizing furnace to form a uniform copper oxide film layer on the surface thereof;
  • the finished product of the magnesium alloy is wound and packaged by a precision layer around a plum bucket machine.
  • the temperature of the oxidation furnace in which the surface oxidation treatment is performed in the step (4) is controlled at 800 to 1000 ° C, and the oxidation time is controlled in 3 minutes to 5 minutes;
  • the gas introduced into the oxidation furnace includes helium gas and argon gas. , oxygen, hydrogen and nitrogen;
  • the flow rate of gas into the oxidation furnace is as follows: helium gas 1000ml/min, argon gas 1500ml/min, oxygen 1200ml/min, hydrogen 1150ml/min, nitrogen gas 150ml/min.
  • a boron-free oxidized magnesium wire consists of an iron-nickel glass-sealing alloy 1 and an oxygen-free copper strip 2, and the oxygen-free copper strip 2 is uniformly wrapped on the surface of the iron-nickel glass-sealing alloy 1, after being welded and Formed after stretching The overall structure of the hermetic coating.
  • the iron-nickel glass sealing alloy 1 is a 4J47 iron-nickel alloy, and the surface of the oxygen-free copper strip 2 is further provided with a uniform and smooth cuprous oxide glass sealing film layer 3; the oxygen-free copper strip
  • the weight percentage of 2 is 16% to 22%. 5 ⁇
  • the diameter of the boron-free oxidized magnesium wire is less than or equal to 1. 6 mm. .

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  • Joining Of Glass To Other Materials (AREA)
  • Nonmetallic Welding Materials (AREA)

Abstract

一种无硼氧化杜镁丝及其制造工艺。该制造工艺包括：将铁镍玻封合金（1）与无氧铜带（2）冶金复合；拉拔处理，清洗后回火；表面抛光处理；氧化处理；还原处理，得到无硼氧化杜镁丝成品。无硼氧化杜镁丝由铁镍玻封合金与无氧铜带构成，无氧铜带均匀包裹在铁镍玻封合金表面，经过焊接和拉伸后形成密闭包裹的整体结构。该制造工艺采用冶金复合、焊接、拉伸、氧化及还原等工艺，获得的无硼氧化杜镁丝连接牢固、抗氧化时间长，其表面形成一层厚度均匀、色泽一致、光滑的砖红色氧化亚铜玻璃封接膜层（3），能够满足高端电子玻封领域对无硼氧化杜镁丝的要求。

Description

一种无硼氧化杜镁丝及其制造工艺 技术领域
本发明涉及电子玻封材料技术领域， 尤其是一种无硼氧化杜镁丝及其制 造工艺。
背景技术
玻璃封装一般是指二极管的半导体管芯外面用透明的玻璃封闭保护， 玻 璃封装的二极管可以透过玻璃外壳看见二极管的内部。 目前， 在高端电子玻 封材料领域通常会使用到无硼氧化杜镁丝， 这种玻封材料国内至今无法独立 生产， 无硼氧化杜镁丝每年的市场需求量很大， 大量电子制造企业一直依赖 进口。 国外生产企业以及相关研究机构公开的资料， 只是简单介绍无硼氧化 杜镁丝的用途和优点， 并不能从中获得实质的制造技术。
发明内容
本发明的目的是提供一种无硼氧化杜镁丝的制造工艺， 以及采用该工艺 获得的无硼氧化杜镁丝。
本发明的目的是通过采用以下技术方案来实现的：
一种无硼氧化杜镁丝的制造工艺， 包括以下步骤：
( 1 ) 将铁镍玻封合金与无氧铜带通过包覆机复合， 并通过氩弧焊进行 焊接，使两层金属之间形成冶金复合，形成与玻璃相同膨胀系数的金属线材;
(2 ) 对上述金属线材进行拉拔处理， 得到直径为 1. 2至 1. 6毫米的金 属丝， 经超声波清洗后进行回火处理；
(3 )将步骤 （2 ) 获得的金属丝再次进行超声波清洗， 通过精密拉丝机 拉伸形成规定直径的金属丝， 然后对金属丝进行表面抛光处理；
(4)将步骤 （3 ) 获得的金属丝通过氧化炉进行表面氧化处理， 使其表 面形成均匀的氧化铜膜层；
(5 )对步骤（4)获得的金属丝进行氧化还原处理， 使其表面形成一层 均匀、 光滑的砖红色氧化亚铜玻璃封接膜层， 得到无硼氧化杜镁丝成品；
(6 ) 通过精密层绕梅花落桶机将所述杜镁丝成品收绕成型并包装。 作为本发明的优选技术方案， 所述步骤 （4 ) 进行表面氧化处理的氧化 炉温度控制在 800°C至 1000°C， 氧化时间控制在 3分钟至 5分钟。
作为本发明的优选技术方案，所述氧化炉内通入的气体包括氦气、氩气、 作为本发明的优选技术方案， 所述通入氧化炉内的气体流量如下： 氦气 1000ml/min、 氩气 1500ml/min、 氧气 1200ml/min、 氢气 1150ml/min、 氮气 150ml/min。 一种无硼氧化杜镁丝，所述无硼氧化杜镁丝由铁镍玻封合金与无氧铜带 构成， 无氧铜带均匀包裹在铁镍玻封合金的表面， 经过焊接和拉伸后形成密 闭包覆的整体结构。
作为本发明的优选技术方案， 所述无氧铜带的表面还设有一层均匀、 光 滑的氧化亚铜玻璃封接膜层。
作为本发明的优选技术方案，所述无氧铜带的重量百分比为 16%至 22%。 作为本发明的优选技术方案， 所述无氧铜带的重量百分比为 19%, 所述 铁镍玻封合金的重量百分比为 81%。
作为本发明的优选技术方案， 所述无硼氧化杜镁丝的直径小于等于 1. 6 毫米。
本发明的有益效果是： 相对于现有技术， 本发明将铁镍玻封合金与无氧 铜带通过包覆机进行复合， 并通过氩弧焊进行焊接， 使两层金属之间形成冶 金复合， 取代了传统的电镀铜工艺， 从而获得与玻璃膨胀系数相同的无硼氧 化杜镁丝。
本发明采用冶金复合、 焊接、 拉伸、 氧化及还原等工艺， 获得的无硼氧 化杜镁丝连接牢固、 抗氧化时间长， 其表面形成一层厚度均匀、 色泽一致、 光滑的砖红色氧化亚铜玻璃封接膜层， 能够完全满足高端电子玻封领域对无 硼氧化杜镁丝的要求。
附图说明
下面结合附图与具体实施例对本发明作进一步说明：
图 1是本发明的结构示意图。
具体实施方式
无硼氧化杜镁丝的制造工艺， 包括以下步骤：
( 1 ) 将铁镍玻封合金与无氧铜带通过包覆机复合， 并通过氩弧焊进行 焊接，使两层金属之间形成冶金复合，形成与玻璃相同膨胀系数的金属线材;
(2 ) 对上述金属线材进行拉拔处理， 得到直径为 1. 2至 1. 6毫米的金 属丝， 经超声波清洗后进行回火处理；
(3 )将步骤 （2 ) 获得的金属丝再次进行超声波清洗， 通过精密拉丝机 拉伸形成规定直径的金属丝， 然后对金属丝进行表面抛光处理；
(4)将步骤 （3 ) 获得的金属丝通过氧化炉进行表面氧化处理， 使其表 面形成均匀的氧化铜膜层；
(5 )对步骤（4)获得的金属丝进行氧化还原处理， 使其表面形成一层 均匀、 光滑的砖红色氧化亚铜玻璃封接膜层， 得到无硼氧化杜镁丝成品；
(6 ) 通过精密层绕梅花落桶机将所述杜镁丝成品收绕成型并包装。 本实施例中， 所述步骤（4 )进行表面氧化处理的氧化炉温度控制在 800 至 1000°C，氧化时间控制在 3分钟至 5分钟；氧化炉内通入的气体包括氦 气、 氩气、 氧气、 氢气和氮气； 通入氧化炉内的气体流量如下： 氦气 1000ml/min、 氩气 1500ml/min、 氧气 1200ml/min、 氢气 1150ml/min、 氮气 150ml/min。
如图 1所示， 一种无硼氧化杜镁丝， 由铁镍玻封合金 1与无氧铜带 2构 成， 无氧铜带 2均匀包裹在铁镍玻封合金 1的表面， 经过焊接和拉伸后形成 密闭包覆的整体结构。
本实施例中， 所述铁镍玻封合金 1为 4J47铁镍合金， 无氧铜带 2的表 面还设有一层均匀、 光滑的氧化亚铜玻璃封接膜层 3; 所述无氧铜带 2的重 量百分比为 16%至 22%。 作为较佳的实施方式， 所述无氧铜带 2的重量百分 比为 19%, 铁镍玻封合金 4J47的重量百分比为 81%; 本发明无硼氧化杜镁丝 的直径小于等于 1. 6毫米。

Claims

权 利 要 求 书
1、 一种无硼氧化杜镁丝的制造工艺， 其特征是包括以下步骤：
( 1 ) 将铁镍玻封合金与无氧铜带通过包覆机复合， 并通过氩弧焊进行 焊接，使两层金属之间形成冶金复合，形成与玻璃相同膨胀系数的金属线材;
(2 ) 对上述金属线材进行拉拔处理， 得到直径为 1. 2至 1. 6毫米的金 属丝， 经超声波清洗后进行回火处理；
(3 )将步骤 （2 ) 获得的金属丝再次进行超声波清洗， 通过精密拉丝机 拉伸形成规定直径的金属丝， 然后对金属丝进行表面抛光处理；
(4)将步骤 （3 ) 获得的金属丝通过氧化炉进行表面氧化处理， 使其表 面形成均匀的氧化铜膜层；
(5 )对步骤（4)获得的金属丝进行氧化还原处理， 使其表面形成一层 均匀、 光滑的砖红色氧化亚铜玻璃封接膜层， 得到无硼氧化杜镁丝成品；
(6 ) 通过精密层绕梅花落桶机将所述杜镁丝成品收绕成型并包装。
2、 根据权利要求 1所述的无硼氧化杜镁丝的制造工艺， 其特征是： 所 述步骤 （4) 进行表面氧化处理的氧化炉温度控制在 800°C至 1000°C， 氧化 时间控制在 3分钟至 5分钟。
3、 根据权利要求 2所述的无硼氧化杜镁丝的制造工艺， 其特征是： 所 述氧化炉内通入的气体包括氦气、 氩气、 氧气、 氢气和氮气。
4、 根据权利要求 3所述的无硼氧化杜镁丝的制造工艺， 其特征是： 所 述通入氧化炉内的气体流量如下： 氦气 1000ml/min、 氩气 1500ml/min、 氧
Figure imgf000007_0001
5、 一种由权利要求 1所述制造工艺获得的无硼氧化杜镁丝， 其特征是: 所述无硼氧化杜镁丝由铁镍玻封合金与无氧铜带构成， 无氧铜带均匀包裹在 铁镍玻封合金的表面， 经过焊接和拉伸后形成密闭包覆的整体结构。
6、 根据权利要求 5所述的无硼氧化杜镁丝， 其特征是： 所述无氧铜带 的表面还设有一层均匀、 光滑的氧化亚铜玻璃封接膜层。
7、 根据权利要求 5所述的无硼氧化杜镁丝， 其特征是： 所述无氧铜带 的重量百分比为 16%至 22%。
8、 根据权利要求 7所述的无硼氧化杜镁丝， 其特征是： 所述无氧铜带 的重量百分比为 19%, 所述铁镍玻封合金的重量百分比为 81%。
9、 根据权利要求 5所述的无硼氧化杜镁丝， 其特征是： 所述无硼氧化 杜镁丝的直径小于等于 1. 6毫米。
PCT/CN2013/085461 2013-09-14 2013-10-18 一种无硼氧化杜镁丝及其制造工艺 WO2015035682A1 (zh)

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