WO2015032226A1 - 一种led-cob光源及其制备方法 - Google Patents

一种led-cob光源及其制备方法 Download PDF

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Publication number
WO2015032226A1
WO2015032226A1 PCT/CN2014/079362 CN2014079362W WO2015032226A1 WO 2015032226 A1 WO2015032226 A1 WO 2015032226A1 CN 2014079362 W CN2014079362 W CN 2014079362W WO 2015032226 A1 WO2015032226 A1 WO 2015032226A1
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led
heat dissipation
electrode
chip
reflective
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PCT/CN2014/079362
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English (en)
French (fr)
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吴懿平
祝超
刘克
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Wu Yiping
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Publication of WO2015032226A1 publication Critical patent/WO2015032226A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the invention relates to a light source, in particular to an LED-COB light source and a preparation method thereof. Background technique
  • the LED-COB is a chip on board, in which a chip is adhered to an interconnect substrate by a conductive or non-conductive paste, and then wire bonding is performed to realize electrical connection.
  • COB lamp beads have become the mainstream of LED light sources.
  • In-line LED lamp beads have gradually faded out of the stage of LED lighting and display due to their short thermal resistance, fast light decay and short life. Many of the production equipment for in-line LED lamp beads are idle, resulting in waste of resources.
  • the traditional LED-COB light source lamp chip is directly packaged on the aluminum substrate, the heat generation of the chip far exceeds the heat dissipation capability of the aluminum substrate, and the heat dissipation effect is poor, and the external heat dissipation design must be performed, which increases the LED.
  • the design cost of the luminaire is complicated by the structure of the LED luminaire. Summary of the invention
  • the task of the present invention is to provide an LED-COB light source which has a simple structure, good heat dissipation, can effectively reduce production cost, save resources, and has good performance, and a method for preparing the LED-COB light source.
  • An LED-COB light source comprising an LED chip and an electrode, wherein the LED chip is electrically connected to the electrode, wherein: the LED-COB light source further comprises a chip heat dissipation bracket, and a reflective bowl or a reflective groove disposed on the chip heat dissipation bracket The reflective bowl or the reflective groove is integrated with the chip heat dissipation bracket; the LED chip includes at least one, and is packaged in the reflective bowl or the reflective groove; the electrode is disposed on the chip type heat dissipation bracket.
  • the sheet type heat dissipating bracket is a metal bracket; the reflecting bowl or the reflecting tank is a reflective bowl or a reflecting groove directly punched on one side of the chip type heat dissipating bracket.
  • the reflecting groove is an elongated opening groove whose bottom is concave and the two sides are outwardly stretched.
  • the electrode comprises a positive electrode and a negative electrode, and the electrode is a metal piece directly punched out on the chip heat dissipation bracket; the electrode is electrically insulated from the chip heat dissipation bracket by a plastic sealing glue.
  • the inner surface of the reflective bowl or the reflective groove is plated with a silver layer; the LED chips are electrically connected by wires to form an LED chip set, and the positive electrode and the negative electrode of the LED chip set are respectively connected to the positive electrode and the negative electrode. .
  • the LED chip is covered with an epoxy cap or a silicone cap.
  • the LED chip is covered with a phosphor glue, and the phosphor glue is covered with an epoxy cap or a silicone cap.
  • the sheet type heat dissipation bracket is an aluminum, copper or iron bracket.
  • a method for preparing an LED-COB light source comprising: the following steps: a. directly punching a metal piece on a chip type heat dissipating bracket, the punched metal piece is an electrode; b, in a chip type heat dissipating bracket The side is stamped out of the separate reflective bowl or the strip-shaped reflective groove; c. The electrode is electrically insulated from the chip-type heat sink;
  • LED chip Place an LED chip in the reflective bowl or reflective tank, connect the positive and negative poles to the positive electrode and the negative electrode on the chip heat sink respectively; or place multiple LED chips in the reflective bowl or reflective tank, and use Conducting a plurality of LED chips in series and/or in parallel to form an LED chip set, and then connecting the positive electrode and the negative electrode of the LED chip set to the positive electrode and the negative electrode on the chip heat sink support; e. coating on the LED chip An epoxy cap or a silicone cap, dried and cured; or coated with a phosphor paste on the LED chip, dried and cured, and then coated with an epoxy cap or a silicone cap on the phosphor colloid, dried and cured ;
  • the step b further includes a step of performing a silver plating process on the reflective bowl or the reflective groove; the electrode in the step c is electrically insulated from the chip heat dissipation bracket by a plastic sealing glue; and the electrode and the chip heat dissipation bracket in the step f The connected metal part is punched out by a punching machine.
  • the invention has the following advantages: simple structure, good heat dissipation and good use performance, and is applied to LED lamps, no need to additionally provide a heat dissipation structure, effectively reducing production cost, saving resources, and further capable of directly inserting LED lamp bead production equipment. Use it.
  • Figure 1 is a cross-sectional view of an LED-COB light source of the present invention
  • FIG. 2 is a schematic view of the sheet type heat dissipating bracket in front of the stamping reflective groove of the present invention
  • FIG. 4 is a large part 'mouth' of the portion A of FIG. 1;
  • the LED-COB light source comprising LED chip 4 and electrode 1, LED chip 4 and electrode 1 electrical connection.
  • the LED-COB light source further comprises a chip heat dissipation bracket 2, a reflective bowl or a reflective groove 3 disposed on the chip heat dissipation bracket 2; the reflective bowl or the reflective groove 3 and the chip heat dissipation bracket 2 are integrated; the LED chip 4 includes at least One is encapsulated in the reflective bowl or the reflective tank 3; the electrode 1 is disposed on the sheet heat sink 2.
  • the sheet type heat dissipating bracket is preferably a metal bracket, and more preferably a material having good heat conductivity such as an aluminum sheet, a copper sheet or an iron sheet.
  • the reflective bowl or the reflective groove 3 is directly stamped on the side of the sheet type heat dissipating bracket 2 (as shown in FIG. 3).
  • the stamped reflective groove 3 is a strip with a concave bottom and two sides.
  • the open groove of the shape; the side of the chip heat dissipation bracket 2 refers to the surface in the thickness direction thereof; the structural arrangement of this way makes the heat dissipation effect of the LED-COB light source far superior to the conventional LED chip packaged on the aluminum substrate The light source on the front.
  • the electrode 1 includes a positive electrode 1 and a negative electrode 1 which are metal sheets directly punched out on the chip heat dissipating bracket 2; the electrode 1 is electrically insulated from the chip heat dissipating bracket 2 through the laminating rubber 5.
  • the manufacturing process of the electrode is as follows: First, the metal piece is punched out on the chip type heat dissipating bracket 2, the metal piece is used as an electrode (as shown in FIG.
  • the positive electrode and the negative electrode are passed through the laminating rubber 5 and the chip type heat dissipating bracket 2
  • the metal portion of the connection between the electrode 1 and the chip heat dissipation bracket 2 is punched off by a foot punching machine to realize electrical insulation connection between the electrode 1 and the chip heat dissipation bracket 2.
  • the inner surface of the reflecting bowl or the reflecting tank 3 is plated with a silver layer, and this structure can enhance the heat conduction effect.
  • the LED chip 4 includes a plurality of LED chips 4 electrically connected to each other to form an LED chip set.
  • the positive electrode and the negative electrode of the LED chip set are respectively connected to the positive electrode 1 and the negative electrode 1.
  • the wires are preferably gold wires, copper wires, aluminum wires or Alloy wire.
  • the LED chip package can be used with or without phosphor glue. If the phosphor is not used, epoxy resin or silica gel is directly coated on the LED chip 4, and dried and solidified to form an epoxy cap or a silicone cap 7. If the phosphor paste is used, the phosphor paste 8 is coated on the LED chip 4, dried and solidified, and then coated with epoxy resin or silica gel on the phosphor paste, and after drying and curing, an epoxy cap or a silicone gel is formed. Cap 7.
  • This LED-COB light source can be applied to a variety of LED luminaires, including but not limited to bulbs, downlights, desk lamps, spotlights, troffers, and the like.
  • the above LED-COB light source is prepared as follows:
  • the metal piece is directly punched out on the chip type heat dissipating bracket 2, and the punched metal piece is an electrode;
  • b. a separate reflective bowl or a long reflective groove is punched out on the side of the chip type heat dissipating bracket 2 3;
  • c electrically insulating the electrode 1 and the chip heat dissipation bracket 2;
  • LED chip 4 Place an LED chip 4 in the reflective bowl or the reflective groove 3, and connect the positive electrode and the negative electrode to the positive electrode and the negative electrode on the chip heat dissipation bracket 2 respectively; or place multiple particles in the reflective bowl or the reflective groove 3.
  • the LED chip 4, and the plurality of LED chips 4 are connected in series and/or in parallel by the wire 6 to form LED chip set, and then connecting the positive electrode and the negative electrode of the LED chip set to the positive electrode and the negative electrode on the chip heat dissipation bracket 2;
  • step b further comprises the step of silver plating the reflective bowl or the reflecting tank 3; the electrode 1 in the step c is electrically insulated from the sheet heat dissipating bracket 2 by the laminating rubber 5; the electrode 1 and the sheet heat dissipating bracket 2 in the step f The connected metal part is punched out by a punching machine;
  • the steps of the above method for preparing the LED-COB light source are not limited to a single order, and can be adjusted as needed, as long as the LED-COB light source of the present invention can be made within the protection range of the present invention.

Abstract

一种LED-COB光源及其制备方法，属于LED照明技术领域，LED-COB光源包括：片式散热支架（2）和设置于所述片式散热支架（2）侧面上的反光碗或反光槽（3），至少一颗LED芯片（4）封装于所述反光碗或反光槽（3）内，所述LED芯片（4）与设置于片式散热支架（2）上的电极（1）电连接，在所述片式散热支架（2）侧面上直接冲压而成的所述反光碗或反光槽（3）与所述片式散热支架（2）为一体结构。该LED-COB光源相比现有技术中的LED-COB光源改进了散热效果，可有效降低生产成本。

Description

一种 LED-COB光源及其制备方法 技术领域
本发明涉及一种光源， 具体涉及一种 LED-COB光源及其制备方法。 背景技术
LED-COB即 chip on board, 就是将棵芯片用导电或非导电胶粘附在互 连基板上， 然后进行引线键合实现其电连接。 随着 LED封装技术的进步， COB灯珠成为 LED光源的主流， 直插式的 LED灯珠因其热阻大、 光衰快、 寿命短等缺点逐渐淡出了 LED照明与显示的舞台， 这使得直插式 LED灯 珠的生产设备很多都闲置下来， 造成资源浪费。
另外， 传统的 LED-COB 光源的灯珠芯片直接封装在铝基板上， 芯片 的发热量远远超过了铝基板的散热能力， 散热效果差， 必须再进行外部的 散热设计， 这就增加了 LED灯具的设计成本， 制成的 LED灯具结构复杂。 发明内容
本发明的任务是提供一种结构简单、 散热良好、 能有效降低生产成本、 节约资源、 性能良好的 LED-COB光源， 及制备该 LED-COB光源的方法。
本发明通过下述技术方案来实现：
一种 LED-COB光源， 包括 LED芯片和电极， LED芯片与电极电连接， 其 特征在于： 所述 LED-COB 光源还包括片式散热支架， 设置于片式散热支 架上的反光碗或反光槽； 反光碗或反光槽与片式散热支架为一体结构； 所 述 LED芯片包括至少一颗， 封装于反光碗或反光槽内； 所述电极设置于片 式散热支架上。
本发明进一步的改进方案包括：
所述片式散热支架为金属支架； 所述反光碗或反光槽为片式散热支架一侧 面上直接沖压而成的反光碗或反光槽。
所述反光槽为底部内凹而两侧外张的长条形的开口槽。
所述电极包括正电极和负电极， 电极为片式散热支架上直接沖裁出的金 属片； 电极通过塑封胶与片式散热支架电绝缘相连。
在所述反光碗或反光槽的内表面镀有银层； 所述 LED 芯片之间用导线 电连接成 LED芯片组， LED芯片组的正极、 负极分别与所述正电极、 所述 负电极连接。
在所述 LED芯片上覆盖有环氧树脂帽或硅胶帽。 在所述 LED芯片上覆盖有荧光粉胶， 荧光粉胶上覆盖有环氧树脂帽或 硅胶帽。
所述片式散热支架为铝、 铜、 铁支架。
一种 LED-COB光源的制备方法， 其特征在于： 包括以下步骤： a、 在片式散热支架上直接沖裁出金属片， 该沖裁出的金属片为电极； b、 在片式散热支架的侧面沖压出分离式的反光碗或长条状的反光槽； c、 将电极与片式散热支架电绝缘相连；
d、 在反光碗或反光槽内放置一颗 LED芯片， 将其正极、 负极分别与片式 散热支架上的正电极、 负电极相连； 或在反光碗或反光槽内放置多颗 LED 芯片， 并用导线对多颗 LED芯片进行串联和 /或并联， 形成 LED芯片组， 再将 LED芯片组的正极、 负极连至片式散热支架上的正电极、 负电极上； e、 在 LED芯片上涂覆一个环氧树脂帽或硅胶帽， 烘干固化； 或先用荧光 粉胶涂覆在 LED芯片上， 烘干固化， 再在荧光粉胶体上涂覆一个环氧树脂 帽或硅胶帽， 烘干固化；
f、 将电极与片式散热支架的连接的金属部分裁掉。
所述步骤 b还包括对反光碗或反光槽进行镀银处理的步骤； 所述步骤 c中的电极与片式散热支架通过塑封胶电绝缘相连； 所述步骤 f中电极与片 式散热支架的连接的金属部分通过沖脚机沖裁掉。
本发明具有以下优点： 结构简单、散热良好、使用性能佳，应用于 LED 灯具， 不需再额外设置散热结构， 有效降低生产成本、 节约资源， 而且可 以再将直插式 LED灯珠的生产设备利用起来。 附图说明
图 1是本发明一种 LED-COB光源的剖视图；
图 2是本发明中片式散热支架在沖压反光槽前的示意图； 图 4是图 1的 A处^部 大图 ' 口 ' ；
其中： 1-电极， 2-片式散热支架， 3-反光槽， 4- LED芯片， 5-塑封胶， 6-导线， 7-环氧树脂帽或硅胶帽， 8-荧光粉胶。 具体实施方式
下面结合附图对本发明一种 LED-COB 光源及其制备方法作进一步描 述：
实施例 1 :
一种 LED-COB光源， 包括 LED芯片 4和电极 1 , LED芯片 4与电极 1电连接。 该 LED-COB光源还包括片式散热支架 2, 设置于片式散热支架 2上的反光碗或反光槽 3;反光碗或反光槽 3与片式散热支架 2为一体结构； LED芯片 4包括至少一颗， 封装于反光碗或反光槽 3内； 电极 1设置于片 式散热支架 2上。 其中片式散热支架优选为金属支架， 更优选其为铝片、 铜片、 铁片等导热良好的材料。
其中反光碗或反光槽 3是在片式散热支架 2—侧面上直接沖压而成的 (如图 3所示），优选该沖压成的反光槽 3为底部内凹而两侧外张的长条形 的开口槽； 片式散热支架 2的侧面是指其厚度方向的表面； 此种方式的结 构设置， 使得此种 LED-COB光源的散热效果远远优于传统的将 LED芯片 封装在铝基板正面的光源。
其中电极 1包括正电极 1和负电极 1 ,其为片式散热支架 2上直接沖裁 出的金属片； 电极 1通过塑封胶 5与片式散热支架 2电绝缘相连。 电极的 制作流程如下： 先在片式散热支架 2上沖裁出金属片， 该金属片作为电极 (如图 2所示），再将正电极和负电极通过塑封胶 5与片式散热支架 2相连， 再用沖脚机将电极 1与片式散热支架 2的连接的金属部分沖裁掉， 实现电 极 1与片式散热支架 2之间电绝缘相连。
优选在反光碗或反光槽 3的内表面镀有银层， 此种结构能够增强导热 效果。 LED芯片 4包括多个，它们之间用导线 6电连接成 LED芯片组， LED 芯片组的正极、 负极分别与正电极 1、 负电极 1连接， 导线优选为金线、 铜 线、 铝线或合金线。
其中 LED芯片的封装可以用或不用荧光粉胶。 如不用荧光粉胶， 直接 在 LED芯片 4上涂覆环氧树脂或硅胶， 烘干固化， 形成环氧树脂帽或硅胶 帽 7。 如果用荧光粉胶， 先在 LED芯片 4上涂覆荧光粉胶 8后， 烘干固化， 再在荧光粉胶上涂覆环氧树脂或硅胶， 烘干固化后， 形成环氧树脂帽或硅 胶帽 7。
这种 LED-COB光源能应用于各种 LED灯具， 包括但不限于球泡灯、筒 灯、 台灯、 投光灯、 暗槽灯等。
上述 LED-COB光源的制备方法如下：
包括以下步骤：
a、 在片式散热支架 2上直接沖裁出金属片， 该沖裁出的金属片为电极； b、 在片式散热支架 2的侧面沖压出分离式的反光碗或长条状的反光槽 3; c、 将电极 1与片式散热支架 2电绝缘相连；
d、 在反光碗或反光槽 3内放置一颗 LED芯片 4, 将其正极、 负极分别与片 式散热支架 2上的正电极、 负电极相连； 或在反光碗或反光槽 3内放置多 颗 LED芯片 4, 并用导线 6对多颗 LED芯片 4进行串联和 /或并联， 形成 LED芯片组， 再将 LED芯片组的正极、 负极连至片式散热支架 2上的正电 极、 负电极上；
e、 在 LED芯片 4上涂覆一个环氧树脂帽或硅胶帽 7, 烘干固化； 或先用荧 光粉胶 8涂覆在 LED芯片 4上， 烘干固化， 再在荧光粉胶体上涂覆一个环 氧树脂帽或硅胶帽 7, 烘干固化；
f、 将电极 1与片式散热支架 2的连接的金属部分裁掉。
优选步骤 b还包括对反光碗或反光槽 3进行镀银处理的步骤； 步骤 c 中的电极 1与片式散热支架 2通过塑封胶 5电绝缘相连； 步骤 f 中电极 1 与片式散热支架 2的连接的金属部分通过沖脚机沖裁掉；
其中上述制备 LED-COB 光源的方法的步骤不限定为唯一先后顺序， 可以 根据需要进行调整， 只要能制成本发明的 LED-COB 光源均在本发明的保 护范围内。
本发明详细介绍了一种实施方式及其附图， 但本发明不限于该实施例 及其附图， 本领域普通技术人员根据本发明， 不付出创造性劳动， 对其进 行修改、 等同替换、 改进等而得到的其他实施方式及其附图， 均在本发明 的保护范围内。

Claims

权利要求书
1、 一种 LED-C0B光源， 包括 LED芯片 （ 4 )和电极（ 1 ), LED芯片 (4)与电极（1) 电连接， 其特征在于： 所述 LED-COB光源还包括片式 散热支架（2), 设置于片式散热支架（2)上的反光碗或反光槽 (3); 反光 碗或反光槽 (3) 与片式散热支架（2) 为一体结构； 所述 LED芯片 （4) 包括至少一颗， 封装于反光碗或反光槽（3) 内； 所述电极（1)设置于片 式散热支架（2)上。
2、 根据权利要求 1所述的一种 LED-COB光源， 其特征在于： 所述片 式散热支架（2) 为金属支架； 所述反光碗或反光槽（3) 为片式散热支架
(2)一侧面上直接沖压而成的反光碗或反光槽（3)。
3、 根据权利要求 2所述的一种 LED-COB光源， 其特征在于： 所述反 光槽 (3) 为底部内凹而两侧外张的长条形的开口槽。
4、 根据权利要求 1至 3中任一权利要求所述的一种 LED-COB光源， 其特征在于： 所述电极（ 1 ) 包括正电极和负电极， 电极（ 1 ) 为片式散热 支架（2)上直接沖裁出的金属片； 电极（1)通过塑封胶（5)与片式散热 支架（2) 电绝缘相连。
5、 根据权利要求 4所述的一种 LED-COB光源， 其特征在于： 在所述 反光碗或反光槽 (3) 的内表面镀有银层； 所述 LED芯片 （4)之间用导线
( 6 )电连接成 LED芯片组， LED芯片组的正极、 负极分别与所述正电极、 所述负电极连接。
6、 根据权利要求 5所述的一种 LED-COB光源， 其特征在于： 在所述 LED芯片 （4)上覆盖有环氧树脂帽或硅胶帽 （7)。
7、 根据权利要求 5所述的一种 LED-COB光源， 其特征在于： 在所述 LED芯片 （ 4 )上覆盖有荧光粉胶 ( 8 ), 荧光粉胶上覆盖有环氧树脂帽或硅 胶帽 （ 7 )。
8、 根据权利要求 1所述的一种 LED-COB光源， 其特征在于： 所述片 式散热支架（2) 为铝、 铜、 铁支架。
9、 一种 LED-COB光源的制备方法， 其特征在于： 包括以下步骤： a、 在片式散热支架（2)上直接沖裁出金属片， 该沖裁出的金属片为电极； b、 在片式散热支架（2) 的侧面沖压出分离式的反光碗或长条状的反光槽 (3);
c、 将电极（1) 与片式散热支架（2) 电绝缘相连；
d、 在反光碗或反光槽 (3) 内放置一颗 LED芯片 （4), 将其正极、 负极分 别与片式散热支架（2)上的正电极、 负电极相连； 或在反光碗或反光槽（3) 内放置多颗 LED芯片 （4), 并用导线（6)对多颗 LED芯片 （4)进行串 联和 /或并联， 形成 LED芯片组， 再将 LED芯片组的正极、 负极连至片式 散热支架（2)上的正电极、 负电极上；
e、 在 LED芯片 （4)上涂覆一个环氧树脂帽或硅胶帽 （7), 烘干固化； 或 先用荧光粉胶（8)涂覆在 LED芯片 （4)上， 烘干固化， 再在荧光粉胶体 上涂覆一个环氧树脂帽或硅胶帽（ 7 ), 烘干固化；
f、 将电极（1)与片式散热支架（2) 的连接的金属部分裁掉。
10、 根据权利要求 9所述的一种 LED-COB光源的制备方法， 其特征 在于： 所述步骤 b还包括对反光碗或反光槽（3)进行镀银处理的步骤； 所 述步骤 c中的电极（ 1 )与片式散热支架（ 2 )通过塑封胶（ 5 )电绝缘相连； 所述步骤 f 中电极（ 1 )与片式散热支架（2) 的连接的金属部分通过沖脚 机沖裁掉。
PCT/CN2014/079362 2013-09-09 2014-06-06 一种led-cob光源及其制备方法 WO2015032226A1 (zh)

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