WO2015029705A1 - Elément détecteur de faisceau d'énergie à semi-conducteurs - Google Patents
Elément détecteur de faisceau d'énergie à semi-conducteurs Download PDFInfo
- Publication number
- WO2015029705A1 WO2015029705A1 PCT/JP2014/070482 JP2014070482W WO2015029705A1 WO 2015029705 A1 WO2015029705 A1 WO 2015029705A1 JP 2014070482 W JP2014070482 W JP 2014070482W WO 2015029705 A1 WO2015029705 A1 WO 2015029705A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- semiconductor region
- region
- conductivity type
- main surface
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 457
- 238000001514 detection method Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 239000012535 impurity Substances 0.000 claims abstract description 39
- 238000002161 passivation Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims 1
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000009825 accumulation Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
Abstract
La présente invention concerne un élément (ED1) détecteur de faisceau d'énergie à semi-conducteur qui est doté d'un substrat (1) à semi-conducteur ayant une surface (1a) principale et une surface (1b) principale se faisant face. Le substrat (1) à semi-conducteur possède : une première zone (3) à semi-conducteur d'un premier type de conductivité, la première zone (3) à semi-conducteur étant disposée côté surface (1a) principale ; une deuxième zone (5) à semi-conducteur du premier type de conductivité ayant une concentration plus élevée en impuretés que celle de la première zone (3) à semi-conducteur, la deuxième zone (5) à semi-conducteur étant positionnée côté surface (1b) principale ; une troisième zone (7) à semi-conducteur d'un second type de conductivité et constituant une zone sensible au faisceau d'énergie dotée de la première zone (3) à semi-conducteur, la troisième zone (7) à semi-conducteur étant positionnée côté surface (1a) principale ; une quatrième zone (9) à semi-conducteur du second type de conductivité, la quatrième zone (9) à semi-conducteur étant positionnée côté surface (1a) principale pour entourer la zone dans laquelle la troisième zone (7) à semi-conducteur est positionnée ; et une cinquième zone (11) à semi-conducteur du second type de conductivité, la cinquième zone (11) à semi-conducteur étant positionnée côté surface (1a) principale pour suivre le bord extérieur du substrat (1) à semi-conducteur.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-179147 | 2013-08-30 | ||
| JP2013179147A JP6170379B2 (ja) | 2013-08-30 | 2013-08-30 | 半導体エネルギー線検出素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015029705A1 true WO2015029705A1 (fr) | 2015-03-05 |
Family
ID=52586277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2014/070482 WO2015029705A1 (fr) | 2013-08-30 | 2014-08-04 | Elément détecteur de faisceau d'énergie à semi-conducteurs |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6170379B2 (fr) |
| WO (1) | WO2015029705A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111066156A (zh) * | 2017-09-08 | 2020-04-24 | 浜松光子学株式会社 | 半导体晶片的制造方法、半导体能量线检测元件的制造方法及半导体晶片 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6962906B2 (ja) * | 2016-03-03 | 2021-11-05 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
| US11215698B2 (en) | 2016-08-29 | 2022-01-04 | Hamamatsu Photonics K.K. | Distance sensor and distance image sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01216581A (ja) * | 1988-02-25 | 1989-08-30 | Fuji Electric Co Ltd | 半導体装置 |
| JPH05275731A (ja) * | 1992-03-25 | 1993-10-22 | Sharp Corp | フォトダイオード |
| JP2002314120A (ja) * | 2001-04-18 | 2002-10-25 | Hamamatsu Photonics Kk | ホトダイオード |
| JP2007335596A (ja) * | 2006-06-14 | 2007-12-27 | Hamamatsu Photonics Kk | フォトダイオードアレイ |
| JP2010239005A (ja) * | 2009-03-31 | 2010-10-21 | Kinki Univ | 裏面照射型撮像素子の製造方法、その製造方法により製造された裏面照射型撮像素子及びそれを備えた撮像装置 |
| JP2011138905A (ja) * | 2009-12-28 | 2011-07-14 | Toshiba Corp | 固体撮像装置 |
| WO2012117931A1 (fr) * | 2011-03-02 | 2012-09-07 | ソニー株式会社 | Dispositif d'imagerie à semi-conducteurs et son procédé de fabrication, et instrument électronique |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0921053D0 (en) * | 2009-12-01 | 2010-01-13 | Selex Sensors & Airborne Sys | Infra red detectors and methods of manufacture |
-
2013
- 2013-08-30 JP JP2013179147A patent/JP6170379B2/ja not_active Expired - Fee Related
-
2014
- 2014-08-04 WO PCT/JP2014/070482 patent/WO2015029705A1/fr active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01216581A (ja) * | 1988-02-25 | 1989-08-30 | Fuji Electric Co Ltd | 半導体装置 |
| JPH05275731A (ja) * | 1992-03-25 | 1993-10-22 | Sharp Corp | フォトダイオード |
| JP2002314120A (ja) * | 2001-04-18 | 2002-10-25 | Hamamatsu Photonics Kk | ホトダイオード |
| JP2007335596A (ja) * | 2006-06-14 | 2007-12-27 | Hamamatsu Photonics Kk | フォトダイオードアレイ |
| JP2010239005A (ja) * | 2009-03-31 | 2010-10-21 | Kinki Univ | 裏面照射型撮像素子の製造方法、その製造方法により製造された裏面照射型撮像素子及びそれを備えた撮像装置 |
| JP2011138905A (ja) * | 2009-12-28 | 2011-07-14 | Toshiba Corp | 固体撮像装置 |
| WO2012117931A1 (fr) * | 2011-03-02 | 2012-09-07 | ソニー株式会社 | Dispositif d'imagerie à semi-conducteurs et son procédé de fabrication, et instrument électronique |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111066156A (zh) * | 2017-09-08 | 2020-04-24 | 浜松光子学株式会社 | 半导体晶片的制造方法、半导体能量线检测元件的制造方法及半导体晶片 |
| CN111066156B (zh) * | 2017-09-08 | 2023-08-29 | 浜松光子学株式会社 | 半导体晶片的制造方法、半导体能量线检测元件的制造方法及半导体晶片 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015050223A (ja) | 2015-03-16 |
| JP6170379B2 (ja) | 2017-07-26 |
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