WO2015029435A1 - InGaAlN系半導体素子 - Google Patents
InGaAlN系半導体素子 Download PDFInfo
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- WO2015029435A1 WO2015029435A1 PCT/JP2014/004419 JP2014004419W WO2015029435A1 WO 2015029435 A1 WO2015029435 A1 WO 2015029435A1 JP 2014004419 W JP2014004419 W JP 2014004419W WO 2015029435 A1 WO2015029435 A1 WO 2015029435A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 243
- 150000004767 nitrides Chemical class 0.000 claims abstract description 188
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2006—Amorphous materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10346—Indium gallium nitride [InGaN]
Definitions
- the present invention relates to a semiconductor device, and more particularly to a semiconductor device including an InGaAlN nitride semiconductor layer that exhibits good device characteristics even when it is polycrystalline or amorphous.
- InGaAlN nitride semiconductors exhibit high electron mobility and saturated electron velocity, they are attracting attention as materials for high-speed electronic devices that respond to higher frequencies than conventional transistors.
- Non-Patent Document 1 Non-Patent Document 1
- Non-Patent Document 2 it is generally known that the electrical characteristics such as mobility deteriorate as the thickness of the InN decreases. This is because defects are observed on the surface or interface more than in the InN thin film. It is interpreted as being intensively present. In other words, one of the reasons why a transistor using InN does not operate is thought to be that a large amount of defects are generated at the interface with the layer or substrate bonded to the InN layer, and the density of these defects depends on the growth of the InN layer. It can be easily imagined that it depends on the difference (lattice constant difference) between the lattice constant of the underlying layer and substrate of InN and that of InN.
- Patent Document 1 Japanese Patent Laid-Open No. 2000-22205
- a semiconductor light emitting device having a structure in which a hole transport layer is stacked and holes are injected into an n-type semiconductor by using a hole transport layer of an organic compound instead of a p-type semiconductor of a pn junction type LED element to obtain light emission characteristics.
- the substrate used at that time may be a non-single crystal substrate, the semiconductor light emitting element does not use a semiconductor layer as a channel.
- single crystal GaN and single crystal sapphire which are currently used by many researchers as substrates for growing InN, have a lattice constant much different from that of InN, and crystallize InN on such a substrate. It can be easily understood that defects are likely to occur at the interface with the substrate when grown. The problem caused by such lattice mismatch is expected to be solved to some extent by using a stabilized zirconia (YSZ) substrate (Non-patent Document 3) having a lattice constant close to InN.
- YSZ stabilized zirconia
- the present invention has been made in view of such a problem, and the object of the present invention is to greatly eliminate restrictions on manufacturing conditions, based on a completely different idea from the conventional one, and to be inexpensive and have excellent electrical characteristics.
- An object of the present invention is to realize a semiconductor device including an InGaAlN nitride semiconductor layer.
- a semiconductor device provided on a substrate, wherein the composition of the nitride semiconductor layer is in a range of 0.3 ⁇ x ⁇ 1.0 and 0 ⁇ z ⁇ 0.4, and the nitride semiconductor A layer is provided as a channel.
- the composition of the nitride semiconductor layer is such that the composition of the nitride semiconductor layer is 0 ⁇ z ⁇ 0.2, 0.7 ⁇ x ⁇ 1.0 when 0.3 ⁇ x ⁇ 0.7. In the case of 0 ⁇ z ⁇ 0.1.
- the composition of the nitride semiconductor layer is such that the composition of the nitride semiconductor layer is in the range of 0.5 ⁇ x ⁇ 1.0 and 0 ⁇ z ⁇ 0.1.
- the In composition ratio x of the nitride semiconductor layer is 0.99 or less (x ⁇ 0.99).
- an insulating layer is provided between the substrate and the nitride semiconductor layer, and the insulating layer is any one of a HfO 2 layer, an Al 2 O 3 layer, and a SiO 2 layer.
- the nitride semiconductor layer is a film deposited by a sputtering method.
- the nitride semiconductor layer is a film deposited by a pulse sputter deposition method (PSD method).
- the nitride semiconductor layer is a film formed at a temperature of less than 600 ° C.
- the substrate is a non-single crystal substrate.
- the substrate is an insulating substrate.
- the substrate is a synthetic quartz substrate.
- a laminated structure in which a second nitride semiconductor layer having a composition different from that of the nitride semiconductor layer is bonded to at least one main surface of the nitride semiconductor layer.
- the second nitride semiconductor layer may be a nitride semiconductor layer having the composition described above.
- the semiconductor element is a field effect transistor with a channel of the nitride semiconductor layer is on-off ratio of 10 2 or more.
- the composition of the InGaAlN-based nitride semiconductor when the composition of the InGaAlN-based nitride semiconductor is designed within an appropriate range, even a polycrystalline or amorphous film exhibits excellent electrical characteristics sufficient to operate a transistor. Based on knowledge. According to the present invention, there is provided a semiconductor device that is provided with an InGaAlN nitride semiconductor layer as a channel, which is substantially free from restrictions on manufacturing conditions, is inexpensive, and has excellent electrical characteristics.
- Nitride semiconductor layer is a diagram showing the I DS -V DS characteristics of the transistor in the case of polycrystalline InN layer.
- Nitride semiconductor layer is a diagram showing the I DS -V GS characteristics of the transistor in the case of polycrystalline InN layer.
- Nitride semiconductor layer is a diagram showing the I DS -V DS characteristics of the transistor in the case of amorphous InN layer.
- (A) and (B) are graphs showing the I DS -V DS characteristics and I DS -V GS characteristics of a transistor in the case where the nitride semiconductor layer is a single-crystal InN layer having a thickness of 2 nm
- (C) And (D) are graphs showing the I DS -V DS characteristics and I DS -V GS characteristics of the transistor when the nitride semiconductor layer is a single crystal InN layer having a thickness of 5 nm.
- the composition of the nitride semiconductor layers prototype transistor is provided, is a plot in the ternary phase diagram of the In x Ga y Al z N.
- the composition of the nitride semiconductor layer on / off ratio comprises the transistor shows the 10 2 or more and ⁇ , with ⁇ the composition of other nitride semiconductor layer, in the ternary phase diagram of the In x Ga y Al z N
- FIG. 1 In the ternary phase diagram of In x Ga y Al z N, the composition of the nitride semiconductor layer included in the transistor having an on / off ratio of 10 3 or more is indicated by ⁇ , and the composition of the other nitride semiconductor layers is indicated by ⁇ .
- composition of the nitride semiconductor layer included in the transistor having the characteristic that the maximum current density of the transistor exceeds 5 mA / mm is indicated by ⁇
- composition of the other nitride semiconductor layers is indicated by ⁇
- In x Ga y Al z N It is the figure plotted in the original phase diagram.
- x 0.64
- On the In x Ga y Al z N nitride semiconductor layer is a diagram showing a configuration example of a transistor having a stacked structure in which an AlN layer was bonded to the second nitride semiconductor layer (heterojunction structure).
- FIG. 10 is a diagram illustrating a configuration example of a bottom-gate transistor.
- FIG. 1 shows a configuration of a transistor 1a (semiconductor element) according to the first embodiment.
- the transistor 1a includes a substrate 2a, a first insulating layer 3a, a nitride semiconductor layer 4a, a second insulating layer 5a, a source electrode 61, a drain electrode 62, and a gate electrode 63.
- the first insulating layer 3a, the nitride semiconductor layer 4a, and the second insulating layer 5a are provided in order on the main surface S1a of the substrate 2a.
- the first insulating layer 3a is bonded to the substrate 2a.
- the nitride semiconductor layer 4a is bonded to the first insulating layer 3a.
- the second insulating layer 5a is joined to the nitride semiconductor layer 4a.
- the substrate 2a has an insulating property.
- the substrate 2a is a synthetic quartz substrate.
- the substrate 2a is not necessarily an insulating substrate, and may be a conductive substrate.
- an insulating material is formed on the surface thereof. It is preferable to provide a film.
- the substrate 2a may be a single crystal substrate, but since the single crystal substrate is generally expensive, it may be a cheaper non-single crystal substrate.
- the InGaAlN nitride semiconductor layer which is the nitride semiconductor layer 4a, is a polycrystalline or amorphous film having a specific film thickness range, and therefore, a single crystal substrate is necessarily used. There is no.
- the substrate 2a does not need to be a so-called “crystal” substrate, and may be a substrate that can be formed by a method described later, and may be a plastic substrate or the like.
- the first insulating layer 3a functions as an underlayer for the nitride semiconductor layer 4a, and is a layer having a thickness of about 1 nm to 20 nm, for example.
- Examples of the first insulating layer 3a include an amorphous HfO 2 layer, an Al 2 O 3 layer, a SiO 2 layer, and the like.
- InGaAlN-based nitride semiconductors exhibit characteristics such as high wettability with respect to the surfaces of these insulating layers, so that the nucleation density is increased by providing the insulating layer, and a flat, high-quality polycrystalline or amorphous material is provided.
- An InGaAlN nitride semiconductor layer can be formed.
- the wettability of the InGaAlN nitride semiconductor to the surface of the substrate 2a is sufficiently high, even if an InGaAlN nitride semiconductor layer is directly formed on the substrate surface, a flat and high quality InGaAlN nitride is formed. A physical semiconductor layer is obtained.
- the nitride semiconductor layer 4a is an InN layer provided on the substrate 2a, and this InN layer is a polycrystalline or amorphous film having a thickness of 1 nm to 10 nm.
- the planar shape of the nitride semiconductor layer 4a is a rectangle of about 50 ⁇ m ⁇ 5 ⁇ m to 50 ⁇ m ⁇ 10 ⁇ m, for example.
- Amorphous in a narrow sense, is a term that means a material state that does not have a long-range order like a crystal but has a short-range order. Also included in the amorphous material are “latent crystalline materials” that do not have, but show weak diffraction in X-ray analysis. Furthermore, microscopically, even an amorphous film containing microcrystals is included in the amorphous film.
- the nitride semiconductor layer 4a which is a III-V group compound semiconductor, may have either a group V polarity (N polarity) or a group III polarity.
- the nitride semiconductor layer 4a can contain an impurity (for example, Zn) as a dopant. Moreover, even if it contains a light element such as oxygen as an impurity, such a layer is the nitride semiconductor layer 4a.
- the thickness of the nitride semiconductor layer 4a is not less than 1 nm and not more than 10 nm.
- InN has been considered to degrade the electrical characteristics such as mobility as the film thickness is reduced. Therefore, an attempt is made to manufacture a transistor using an extremely thin film of several nm as a channel layer. There was no idea itself.
- the inventors of the present invention have studied the characteristics of the InN layer when the thickness of the InN layer is extremely thin, and when the InN layer is in the above thickness range, it is a polycrystalline or amorphous film.
- the present inventors have come to the conclusion that electrical characteristics equivalent to those of a single crystal film can be obtained, and that good transistor operation is possible.
- FIG. 2 is a graph summarizing the film thickness dependence of InN of the ratio of the ON current to the OFF current of the field effect transistor using the InN layer as a channel, obtained by the experiments of the present inventors.
- the horizontal axis in FIG. 2 represents the film thickness [nm], and the vertical axis in FIG. 2 represents the ON current / OFF current ratio.
- the measurement result indicated as P1 in FIG. 2 is a result when the nitride semiconductor layer 4a is polycrystalline InN, and the measurement result indicated as P2 in FIG. 2 is that the nitride semiconductor layer 4a is amorphous InN.
- the measurement result indicated by P3 in FIG. 2 is the result when the nitride semiconductor layer 4a is single crystal InN.
- the ON current / OFF current ratio of the nitride semiconductor layer 4a is about 10 to 10 8 , It can be seen that a good ON current / OFF current ratio can be realized. In addition, the ON current / OFF current ratio becomes better as the nitride semiconductor layer 4a is thinner in the range of 1 nm to 10 nm. The above tendency does not depend on whether the InN layer that is the nitride semiconductor layer 4a is single crystal, polycrystalline, or amorphous.
- the thickness of the InN layer which is the nitride semiconductor layer 4a, in the range of 1 nm or more and 10 nm or less, even if it is polycrystalline or amorphous, electrical characteristics equivalent to those of a single crystal can be obtained.
- such an InN layer is preferably a film deposited by sputtering because it is easy to form at a relatively low temperature.
- a film deposited by a pulse sputter deposition method (PSD method) with a high degree of freedom in setting the film formation conditions is preferable.
- PSD method pulse sputter deposition method
- the grain size increases as the film is formed at a higher temperature and it becomes difficult to obtain a flat film, it is preferable to form the film at a temperature of less than 600 ° C.
- InN layer In order to form a single-crystal InN layer, it is necessary to sufficiently increase the diffusion length of atoms on the surface of the film formation, and the film must be formed at a relatively high temperature. Since an InN layer having a thickness range of 1 nm or more and 10 nm or less does not need to be a single crystal, there is an advantage that there is no problem even if the film formation temperature is set low.
- the second insulating layer 5a can be exemplified by an amorphous HfO 2 layer, an Al 2 O 3 layer, a SiO 2 layer, and the like, similarly to the first insulating layer 3a. As described above, since InN has high wettability with respect to the surfaces of these insulating layers, there is an effect of suppressing the occurrence of defects at the interface with the InN layer.
- the second insulating layer 5a is a layer having a thickness of about 1 nm to 100 nm, for example.
- the thicknesses of the source electrode 61, the drain electrode 62, and the gate electrode 63 are all about 50 nm, and the materials of the source electrode 61, the drain electrode 62, and the gate electrode 63 are all For example, Au.
- Both the source electrode 61 and the drain electrode 62 are joined to the nitride semiconductor layer 4a and the second insulating layer 5a.
- the gate electrode 63 is provided on the surface of the second insulating layer 5a, and is joined to the second insulating layer 5a.
- a method for manufacturing the transistor 1a will be described by way of example.
- a wafer corresponding to the substrate 2a is prepared.
- a first insulating layer 3a, a nitride semiconductor layer 4a, and a second insulating layer 5a are stacked in this order on the surface of the wafer.
- each of the layers corresponding to the first insulating layer 3a and the second insulating layer 5a may be a layer made of an oxide semiconductor.
- the first insulating layer 3a and the second insulating layer 5a are oxide semiconductors, these layers are both formed by, for example, an atomic layer deposition method (ALD method).
- the oxygen source for forming a film by the ALD method is H 2 O
- the deposition temperature is about 200 ° C.
- the deposition time is about 1 hour 30 minutes.
- the InN layer corresponding to the nitride semiconductor layer 4a is formed by a pulse sputtering method (PSD method).
- PSD method pulse sputtering method
- the deposition rate of the InN layer is about 1 nm / min, and the thickness is set in the range of 1 to 10 nm.
- the deposition temperature of the InN layer is about room temperature in the case of an amorphous film and about 300 to 500 ° C. in the case of a polycrystalline film, depending on the sputtering method. That is, the temperature is lower than a general crystal growth temperature (600 ° C. or higher) when a single crystal InN layer is formed.
- the InN layer corresponding to the nitride semiconductor layer 4a may be formed by a sputtering method other than the PSD method, or by other thin film formation methods such as an evaporation method, an MBE method, or an MOCVD method. From the viewpoint of easily forming a uniform film, sputtering is preferred.
- the polycrystalline nitride semiconductor layer 4a is formed at a temperature of less than 600 ° C. because the grain size increases as the film is formed at a higher temperature and it becomes difficult to obtain a flat film. It is preferable to form a film.
- Contact holes corresponding to each of the source electrode 61 and the drain electrode 62 are formed in the second insulating layer 5a using a lithography technique. Both the source electrode 61 and the drain electrode 62 are formed by lithography after, for example, vacuum-depositing Au.
- the gate electrode 63 is formed by patterning Au vacuum-deposited on the surface of the second insulating layer 5a by a lift-off method.
- the first insulating layer 3a, the nitride semiconductor layer 4a, and the second insulating layer 5a are laminated in this order on the surface of the wafer corresponding to the substrate 2a, and the source electrode 61, the drain electrode 62, and the gate are stacked. After the electrode 63 is formed, it is separated into chips corresponding to the transistor 1a.
- the transistor 1a is manufactured by the above manufacturing method.
- FIG. 3 shows the I DS -V DS characteristics of the transistor 1a when the nitride semiconductor layer 4a is a polycrystalline InN layer.
- I DS is a current flowing between the drain and the source
- V DS is a voltage between the drain and the source.
- the horizontal axis in FIG. 3 represents V DS [V]
- the vertical axis in FIG. 3 represents I DS [A].
- FIG. 3 shows that I DS when V GS, which is a gate-source voltage, is changed in a step of ⁇ 0.5 [V] in a range of 5 [V] to ⁇ 8 [V]. -V DS characteristics.
- the ON current / OFF current ratio is about 10 5 .
- FIG. 3 shows that I DS approaches zero as V GS decreases. Therefore, referring to FIG. 3, it can be seen that by controlling V GS , switching of the ON current / OFF current ratio of the transistor 1a in the case of polycrystalline InN is sufficiently possible.
- FIG. 4 shows the I DS -V GS characteristics of the transistor 1a when the nitride semiconductor layer 4a is a polycrystalline InN layer.
- the horizontal axis of FIG. 4 represents V GS [V]
- the vertical axis of FIG. 4 represents I DS [A].
- FIG. 5 shows the I DS -V DS characteristics of the transistor 1a when the nitride semiconductor layer 4a is an amorphous InN layer.
- the horizontal axis of FIG. 5 represents V DS [V]
- the vertical axis of FIG. 5 represents I DS [A].
- FIG. 5 shows that I DS approaches zero as V GS decreases. Therefore, referring to FIG. 5, it can be seen that by controlling V GS , switching of the ON current / OFF current ratio of the transistor 1a in the case of amorphous InN is sufficiently possible.
- (Second embodiment: InN layer) 6 and 7 are diagrams for explaining one aspect of the configuration of the transistor 1b (semiconductor element) according to the second embodiment.
- the nitride semiconductor layer 4b is an InN layer provided on the substrate 2b.
- FIG. 6A is an optical microscopic image showing a planar shape of the transistor 1b
- FIG. 6B mainly shows a cross-sectional configuration of the transistor 1b along the line II shown in FIG. 6A.
- FIG. 6A is an optical microscopic image showing a planar shape of the transistor 1b
- FIG. 6B mainly shows a cross-sectional configuration of the transistor 1b along the line II shown in FIG. 6A.
- FIG. 6A is a TEM (Transmission Electron Microscope) lattice image showing the layer structure of the transistor 1b
- FIG. 6B is a view from the region indicated by InN in FIG. 6A
- FIG. 6C is an electron beam diffraction pattern (Fourier transform image of a TEM image)
- FIG. 6C is an electron beam diffraction pattern (Fourier transform image of a TEM image) from a region indicated as YSZ in FIG. 6A to 6C, it can be confirmed that single crystal InN as a nitride semiconductor layer is epitaxially grown on the single crystal YSZ substrate.
- the transistor 1b includes a substrate 2b, a nitride semiconductor layer 4b, an insulating layer 5b, a source electrode 61, a drain electrode 62, and a gate electrode 63.
- the nitride semiconductor layer 4b and the insulating layer 5b are provided in order on the main surface S1b of the substrate 2b.
- the substrate 2b is an yttria stabilized zirconia substrate (YSZ substrate).
- the YSZ substrate has a relatively small in-plane lattice mismatch with nitride semiconductors such as InGaN, InAlN, and InAlGaN mainly containing InN as well as InN.
- Main surface S1b of substrate 2b is bonded to nitride semiconductor layer 4b and has a plane index (111). The main surface S1b is flattened to the atomic level.
- the InN layer as the nitride semiconductor layer 4b is provided on the substrate 2b.
- the nitride semiconductor layer 4b is bonded to the substrate 2b.
- the nitride semiconductor layer 4b is a single crystal.
- Nitride semiconductor layer 4b is an epitaxial layer formed by epitaxial growth from main surface S1b of substrate 2b.
- the nitride semiconductor layer 4b can be either N-polar or III-polar.
- the nitride semiconductor layer 4b can contain impurity Zn (zinc).
- the planar shape of the nitride semiconductor layer 4b is, for example, a rectangle of about 50 ⁇ m ⁇ 5 ⁇ m to 50 ⁇ m ⁇ 10 ⁇ m.
- the thickness of the InN layer that is the nitride semiconductor layer 4b is not less than 1 nm and not more than 10 nm.
- the ON / OFF current ratio of the nitride semiconductor layer is 10 or more and 10 8 or less when the thickness of the InN layer that is the nitride semiconductor layer is 1 nm or more and 10 nm or less.
- a favorable ON current / OFF current ratio can be realized.
- the ON current / OFF current ratio becomes better as the nitride semiconductor layer is thinner in the range of 1 nm to 10 nm.
- the above tendency does not depend on whether the InN layer, which is a nitride semiconductor layer, is single crystal, polycrystalline, or amorphous.
- the InN layer which is the nitride semiconductor layer 4b, is a single crystal InN epitaxially grown on a single crystal YSZ substrate, but a polycrystalline or amorphous material deposited on a synthetic quartz substrate or the like. Even if it is an InN layer, the electrical characteristics equivalent to a single crystal can be obtained by designing the film thickness in the range of 1 nm to 10 nm.
- the insulating layer 5b is bonded to the nitride semiconductor layer 4b.
- the insulating layer 5b include an amorphous HfO 2 layer, an Al 2 O 3 layer, a SiO 2 layer, and the like.
- the film thickness of this insulating layer 5b is 1 nm or more and 100 nm or less, for example.
- the thicknesses of the source electrode 61, the drain electrode 62, and the gate electrode 63 are all about 50 nm, and the materials of the source electrode 61, the drain electrode 62, and the gate electrode 63 are all For example, Au.
- the source electrode 61 and the drain electrode 62 are both joined to the nitride semiconductor layer 4b and the insulating layer 5b.
- the gate electrode 63 is provided on the surface of the insulating layer 5b and joined to the insulating layer 5b.
- a wafer corresponding to the substrate 2b is prepared.
- this wafer is a YSZ substrate, but when a polycrystalline or amorphous InN layer is formed, it may be a non-single crystal substrate or an insulating substrate (for example, a synthetic quartz substrate).
- a nitride semiconductor layer 4b and an insulating layer 5b are stacked in this order on the surface of the wafer.
- the InN layer corresponding to the nitride semiconductor layer 4b is formed by the pulse sputtering method (PSD method) as in the first embodiment.
- the deposition rate of the InN layer is about 1 nm / min, and the thickness is set in the range of 1 to 10 nm.
- the epitaxial temperature was 600 to 700 ° C.
- the deposition temperature is about room temperature, and when polycrystalline InN is deposited, it is about 300 to 500 ° C. That is, the temperature is lower than a general crystal growth temperature (600 ° C. or higher) when a single crystal InN layer is formed.
- the InN layer corresponding to the nitride semiconductor layer 4b may be formed by a sputtering method other than the PSD method, or by other thin film formation methods such as an evaporation method, MBE method, or MOCVD method, but at a relatively low temperature. From the viewpoint of easily forming a uniform film, sputtering is preferred.
- the polycrystalline nitride semiconductor layer 4a is formed at a temperature of less than 600 ° C. because the grain size increases as the film is formed at a higher temperature and it becomes difficult to obtain a flat film. It is preferable to form a film.
- the insulating layer 5b is an oxide semiconductor, for example, it is formed by an atomic layer deposition method (ALD method).
- the oxygen source for forming a film by the ALD method is H 2 O
- the deposition temperature is about 200 ° C.
- the deposition time is about 1 hour 30 minutes.
- Contact holes corresponding to each of the source electrode 61 and the drain electrode 62 are formed in the insulating layer 5b using a lithography technique. Both the source electrode 61 and the drain electrode 62 are formed by lithography after, for example, vacuum-depositing Au.
- the gate electrode 63 is formed by patterning Au vacuum-deposited on the surface of the insulating layer 5b by a lift-off method.
- the nitride semiconductor layer 4b and the insulating layer 5b are stacked in this order on the surface of the wafer corresponding to the substrate 2b to form the source electrode 61, the drain electrode 62, and the gate electrode 63, and then the transistor 1b. Separate into each corresponding chip.
- the transistor 1b is manufactured by the above manufacturing method.
- FIGS. 8A and 8B show ⁇ 1 [V] in the range of +2 [V] to ⁇ 2 [V] of the transistor 1b when the nitride semiconductor layer 4b is a single-crystal InN layer having a thickness of 2 nm. ].
- the I DS -V DS characteristic when V GS is changed (FIG. 8A), and the I DS -V GS characteristic under V DS of 5 [V] (FIG. 8B ))It is shown.
- the horizontal axis in FIG. 8A represents V DS [V]
- the vertical axis in FIG. 8A represents I DS [mA / mm].
- 8B represents V G [V]
- the vertical axis in FIG. 8B represents I DS [A].
- FIGS. 8C and 8D show ⁇ 2 [V] in the range of +4 [V] to ⁇ 10 [V] of the transistor 1 b when the nitride semiconductor layer 4 b is a single crystal InN layer having a thickness of 5 nm. ],
- the I DS -V DS characteristic when V GS is changed (FIG. 8C), and the I DS -V GS characteristic under V DS of 5 [V] (FIG. 8D ))It is shown.
- the horizontal axis in FIG. 8C represents V DS [V]
- the vertical axis in FIG. 8C represents I DS [mA / mm].
- the horizontal axis in FIG. 8D represents V G [V]
- the vertical axis in FIG. 8D represents I DS [A].
- the nitride semiconductor layer 4b is a polycrystalline or amorphous InN layer, similarly, the ON / OFF current ratio of the transistor 1b can be sufficiently switched.
- the semiconductor element according to the present invention has a stacked structure in which a nitride semiconductor layer having a composition different from that of InN is bonded to at least one main surface of the above InN layer, that is, a structure having a heterojunction. It is good also as a semiconductor element.
- the present invention is not limited to the specific configuration disclosed in the present embodiment. We therefore claim all modifications and changes that come within the scope and spirit of the claims.
- the nitride semiconductor layers 4a and 4b of this embodiment can be applied to other semiconductor elements other than transistors.
- the first insulating layer 3a is also applied to such a semiconductor element together with the nitride semiconductor layer 4a.
- the present inventors have further investigated the electrical characteristics of the InGaAlN-based nitride semiconductor, and in a specific composition range, even if it is a “non-single crystal film”, it is equivalent to a single crystal. It became clear that channel characteristics were shown.
- InGaAlN-based nitride semiconductors has a larger ionic radius than other elements, and it has been considered difficult to change the composition in a wide range from a thermodynamic point of view.
- such conventional knowledge is about an InGaAlN nitride semiconductor obtained by a CVD method in which a film is formed at a relatively high temperature.
- the present inventors have found that the above knowledge is only about the InGaAlN nitride semiconductor film formed under a thermal equilibrium state, and deposits the InGaAlN nitride semiconductor by a sputtering method capable of forming a film at a relatively low temperature.
- the present invention has been completed based on the idea that the film formation proceeds stably after being quenched in a thermally non-equilibrium state.
- the field effect transistor 1a having the configuration shown in FIG. 1 is prototyped, and the composition (In x Ga y Al z N) of the nitride semiconductor layer 4a serving as a channel is variously changed.
- the electrical characteristics were evaluated by the ratio of the OFF current (on / off ratio) and the maximum current density.
- the substrate 2a is a synthetic quartz substrate, the first insulating layer 3a is HfO 2 having a thickness of 20 nm, and the second insulating layer 5a is also a gate insulating film and is HfO 2 having a thickness of 20 nm.
- the substrate 2a may be a non-single crystal substrate or an insulating substrate other than the synthetic quartz substrate, and the first insulating layer 3a and the second insulating layer 5a may be an Al 2 O 3 layer or a SiO 2 layer. It may be.
- Each transistor 1a has a gate length of 5 ⁇ m and a channel width of 50 ⁇ m.
- All the In x Ga y Al z N layers were formed by a sputtering method (in this embodiment, a PSD method).
- the deposition rate is about 1 nm / min.
- the deposition temperature was set to less than 600 ° C. to form a polycrystalline or amorphous In x Ga y Al z N layer.
- FIG. 9 is a diagram in which the composition of the nitride semiconductor layer 4a included in the prototyped transistor 1a is plotted in a ternary phase diagram of In x Ga y Al z N.
- the composition of the nitride semiconductor layer 4a on / off ratio comprises the transistor 1a shows the 10 2 or more marks ⁇
- the composition of the other of the nitride semiconductor layer 4a in ⁇ mark is a plot in the ternary phase diagram of the in x Ga y Al z N.
- FIG. 11 shows the composition of the nitride semiconductor layer included in the transistor having an on / off ratio of 10 3 or more as ⁇ , the composition of the other nitride semiconductor layers as ⁇ , and In x Ga y Al z. It is the figure plotted in the ternary phase diagram of N.
- FIG. 12 shows the composition of the nitride semiconductor layer included in the transistor having the characteristics in which the maximum current density of the transistor exceeds 5 mA / mm as ⁇ , and the composition of the other nitride semiconductor layers as ⁇ , it is a plot in the ternary phase diagram of the x Ga y Al z N.
- the ratio is in the range of 1, the maximum current density exceeds 5 mA / mm.
- composition of the nitride semiconductor layer is in the range of 0.5 ⁇ x ⁇ 1.0 and 0 ⁇ z ⁇ 0.1, excellent transistor characteristics with a maximum current density exceeding 5 mA / mm can be obtained. It became clear that
- the In composition ratio excluding InN from the above composition range that is, the In composition ratio x of the nitride semiconductor layer is 0.99 or less (x ⁇ 0.99) It is preferable that
- An InGaAlN-based nitride semiconductor containing 1% or more of Al or Ga that is, a nitride semiconductor film in which x ⁇ 0.99 when represented by the general formula In x Ga y Al z N is structurally strong. Therefore, it is known that defects are difficult to generate (see, for example, Non-Patent Document 4). This is because an InGaAlN-based nitride semiconductor containing 1% or more of Al or Ga is in a state where it is easily thermodynamically phase-separated, and the concentration of Al or Ga tends to be locally non-uniform, resulting in propagation of dislocations. This is thought to be due to the phenomenon that is suppressed.
- FIG. 13A shows the I DS -V DS characteristics when V GS is changed in a step of ⁇ 1 [V] in the range of +5 [V] to ⁇ 7 [V].
- FIG. 13B shows an I DS -V GS characteristic under a V DS of 1 [V].
- This transistor is obtained by depositing a channel layer having a composition of In 0.64 Al 0.36 N at a room temperature of 5 nm on a synthetic quartz substrate by sputtering.
- the gate insulating film is HfO 2 , the gate length is 5 ⁇ m, and the channel width is 50 ⁇ m.
- the above composition is in the range of 0.3 ⁇ x ⁇ 1.0 and 0 ⁇ z ⁇ 0.4, the on / off ratio is 7 ⁇ 10 2 , and the maximum current density is 0.4 mA / mm. there were.
- FIG. 14A shows the I DS -V DS characteristics when V GS is changed in a step of ⁇ 1 [V] in the range of +5 [V] to ⁇ 7 [V].
- FIG. 14B shows an I DS -V GS characteristic under a V DS of 1 [V].
- a channel layer having a composition of In 0.34 Ga 0.33 Al 0.33 N is deposited on a synthetic quartz substrate at a substrate temperature of 400 ° C. by a sputtering method to a thickness of 5 nm.
- the gate insulating film is HfO 2 , the gate length is 5 ⁇ m, and the channel width is 50 ⁇ m.
- the above composition is also in the range of 0.3 ⁇ x ⁇ 1.0 and 0 ⁇ z ⁇ 0.4, the on / off ratio is 1 ⁇ 10 3 , and the maximum current density is 3.4 ⁇ 10 -4 mA / mm.
- FIG. 15A shows the I DS -V DS characteristics when V GS is changed in a step of ⁇ 2 [V] in the range of +2 [V] to ⁇ 6 [V]. ing.
- FIG. 15B shows an I DS -V GS characteristic under a V DS of 1 [V].
- a channel layer having a composition of In 0.42 Ga 0.42 Al 0.16 N is deposited on a synthetic quartz substrate at a substrate temperature of 400 ° C. by a sputtering method to a thickness of 5 nm.
- the gate insulating film is HfO 2 , the gate length is 5 ⁇ m, and the channel width is 50 ⁇ m.
- the composition is in the range of 0.3 ⁇ x ⁇ 0.7 and 0 ⁇ z ⁇ 0.2, the on / off ratio is 1 ⁇ 10 3 , and the maximum current density is 1 ⁇ 10 ⁇ 3 mA. / Mm.
- FIG. 16A shows the I DS -V DS characteristics when V GS is changed in steps of ⁇ 0.5 [V] in the range of +5 [V] to ⁇ 9 [V].
- FIG. 16B shows an I DS -V GS characteristic under a V DS of 1 [V].
- a channel layer having a composition of In 0.3 Ga 0.7 N is deposited on a synthetic quartz substrate at a substrate temperature of 400 ° C. by a sputtering method to a thickness of 30 nm.
- the gate insulating film is HfO 2 , the gate length is 5 ⁇ m, and the channel width is 50 ⁇ m.
- the above composition is also in the range of 0.3 ⁇ x ⁇ 0.7 and 0 ⁇ z ⁇ 0.2, the on / off ratio is 1 ⁇ 10 6 , and the maximum current density is 0.5 mA / mm. Met.
- FIG. 17A shows the I DS -V DS characteristics when V GS is changed in a step of ⁇ 1 [V] in the range of +4 [V] to ⁇ 9 [V].
- FIG. 17B shows an I DS -V GS characteristic under a V DS of 1 [V].
- a channel layer having a composition of In 0.67 Ga 0.33 N at a substrate temperature of 400 ° C. is deposited on a synthetic quartz substrate by a sputtering method with a thickness of 6 nm.
- the gate insulating film is HfO 2 , the gate length is 5 ⁇ m, and the channel width is 50 ⁇ m.
- the composition is in the range of 0.5 ⁇ x ⁇ 1.0 and 0 ⁇ z ⁇ 0.1, the on / off ratio is 1 ⁇ 10 4 , and the maximum current density is 7.5 mA / mm. there were.
- FIG. 18A shows the I DS -V DS characteristics when V GS is changed in a step of ⁇ 1 [V] in the range of 0 [V] to ⁇ 9 [V].
- FIG. 18B shows an I DS -V GS characteristic under a V DS of 5 [V].
- a channel layer having a composition of In 0.5 Ga 0.5 N is deposited on a synthetic quartz substrate at a substrate temperature of 400 ° C. by a sputtering method to a thickness of 45 nm.
- This transistor has a ring gate structure, the gate insulating film is HfO 2 , the gate ring diameter is 100 ⁇ m, and the channel length is 10 ⁇ m.
- the above composition is also in the range of 0.5 ⁇ x ⁇ 1.0 and 0 ⁇ z ⁇ 0.1, the on / off ratio is 1 ⁇ 10 8 , and the maximum current density is 25 mA / mm. It was.
- the transistor characteristics shown in FIG. 13 to FIG. 18 are for some of the many transistors prototyped by the present inventors. As a result of analyzing the characteristics of a large number of transistors, the above-mentioned conclusion was obtained regarding the composition of the nitride semiconductor.
- the transistor 1a to the on / off ratio showed 10 2 or more is obtained.
- FIG. 19 shows a transistor 1c having a laminated structure (heterojunction structure) in which an AlN layer is joined to a second nitride semiconductor layer 6c on the above-described In x Ga y Al z N nitride semiconductor layer 4c. It is a figure which shows the example of a structure.
- the substrate 2c is a synthetic quartz substrate.
- the nitride semiconductor layer 4c is a polycrystalline or amorphous film having a thickness of 3 nm, for example.
- an amorphous HfO 2 layer having a thickness of 15 nm is provided as the insulating layer 5c.
- a good interface is obtained by interposing the AlN layer as the second nitride semiconductor layer 6c between the nitride semiconductor layer 4c and the HfO 2 layer as the insulating layer 5c.
- FIG. 20 is a diagram illustrating a configuration example of the bottom-gate transistor 1d.
- the substrate 2d is a synthetic quartz substrate.
- the nitride semiconductor layer 4d is a polycrystalline or amorphous film having a thickness of 3 nm, for example.
- An amorphous HfO 2 layer having a thickness of 100 to 150 nm is provided as an insulating layer 5d between the nitride semiconductor layer 4d and the substrate 2d, and the gate 63 is formed of an ITO film having a thickness of about 90 nm. Yes.
- the semiconductor element according to the present invention has a stacked structure (heterojunction) in which the second nitride semiconductor layer having a composition different from that of the nitride semiconductor layer is bonded to at least one main surface of the nitride semiconductor layer. (Structure) may be provided.
- the nitride semiconductor layer is In x1 Ga y1 Al z1 N
- the second nitride semiconductor layer is In x2 Ga y2 Al z2 N (where x2 ⁇ x1)
- the nitride of In x1 Ga y1 Al z1 N A transistor having a double hetero structure in which the upper and lower sides of the semiconductor layer are sandwiched between second nitride semiconductor layers of In x2 Ga y2 Al z2 N may be used.
- a semiconductor device including an InGaAlN nitride semiconductor layer that is substantially free from restrictions on manufacturing conditions, is inexpensive, and has excellent electrical characteristics.
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Abstract
Description
図1には、第1の実施形態に係るトランジスタ1a(半導体素子)の構成が示されている。トランジスタ1aは、基板2a、第1の絶縁層3a、窒化物半導体層4a、第2の絶縁層5a、ソース電極61、ドレイン電極62、ゲート電極63を備える。
図6及び図7は、第2の実施形態に係るトランジスタ1b(半導体素子)の構成の一態様を説明するための図である。なお、本実施形態においても、窒化物半導体層4bは、基板2b上に設けられたInN層である。
上述の第1および第2の実施形態では、窒化物半導体層は、一般式InxGayAlzN(但し、x+y+z=1.0)においてx=1であるInN層とした。そして、InN層の場合には、これを特定の厚み範囲のものとすることで、単結晶と同等のチャネル特性を示す「非単結晶」の膜が得られることを明らかにした。
2a,2b,2c,2d 基板
3a 第1の絶縁層
4a,4b,4c,4d 窒化物半導体層
5a 第2の絶縁層
5b,5c,5d 絶縁層
6c 第2の窒化物半導体層
61 ソース電極
62 ドレイン電極
63 ゲート電極
S1a,S1b 主面
Claims (14)
- 一般式InxGayAlzN(但し、x+y+z=1.0)で表記される多結晶若しくは非晶質の窒化物半導体層が基板上に設けられている半導体素子であって、
前記窒化物半導体層の組成は、0.3≦x≦1.0、且つ、0≦z<0.4の範囲にあり、
前記窒化物半導体層をチャネルとして備えている、
ことを特徴とするInGaAlN系半導体素子。 - 前記窒化物半導体層の組成は、
前記窒化物半導体層の組成は、0.3≦x<0.7の場合に0≦z<0.2、0.7≦x≦1.0の場合に0≦z<0.1の範囲にある、
請求項1に記載のInGaAlN系半導体素子。 - 前記窒化物半導体層の組成は、
前記窒化物半導体層の組成は、0.5≦x≦1.0、且つ、0≦z<0.1の範囲にある、
請求項2に記載のInGaAlN系半導体素子。 - 前記窒化物半導体層のIn組成比xは0.99以下(x≦0.99)である、
請求項1~3の何れか1項に記載のInGaAlN系半導体素子。 - 前記基板と前記窒化物半導体層の間に絶縁層を備え、
該絶縁層は、HfO2層、Al2O3層、SiO2層の何れかである、
請求項1~3の何れか1項に記載のInGaAlN系半導体素子。 - 前記窒化物半導体層は、スパッタリング法により堆積された膜である、
請求項1~3の何れか1項に記載のInGaAlN系半導体素子。 - 前記窒化物半導体層は、パルススパッタ堆積法(PSD法)により堆積された膜である、
請求項6に記載のInGaAlN系半導体素子。 - 前記窒化物半導体層は、600℃未満の温度で成膜された膜である、
請求項6に記載のInGaAlN系半導体素子。 - 前記基板は非単結晶基板である、
請求項1~3の何れか1項に記載のInGaAlN系半導体素子。 - 前記基板は絶縁性基板である、
請求項1~3の何れか1項に記載のInGaAlN系半導体素子。 - 前記基板は合成石英基板である、
請求項10に記載のInGaAlN系半導体素子。 - 前記窒化物半導体層の少なくとも一方の主面に、該窒化物半導体層と組成の異なる第2の窒化物半導体層が接合した積層構造を備えている、
請求項1~3の何れか1項に記載のInGaAlN系半導体素子。 - 前記第2の窒化物半導体層は、請求項1~3の何れかにおいて規定した組成の窒化物半導体層である、
請求項12に記載のInGaAlN系半導体素子。 - 前記半導体素子は、前記窒化物半導体層をチャネルとする電界効果トランジスタであり、オンオフ比が102以上である、
請求項1~3の何れか1項に記載のInGaAlN系半導体素子。
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KR102309747B1 (ko) | 2021-10-08 |
WO2015029434A1 (ja) | 2015-03-05 |
CN105518868A (zh) | 2016-04-20 |
JP6212124B2 (ja) | 2017-10-11 |
KR20210000745A (ko) | 2021-01-05 |
EP3043389A4 (en) | 2017-04-26 |
JPWO2015029435A1 (ja) | 2017-03-02 |
KR102340742B1 (ko) | 2021-12-20 |
EP3043389B1 (en) | 2020-05-20 |
TWI630722B (zh) | 2018-07-21 |
KR20160047573A (ko) | 2016-05-02 |
CN105518868B (zh) | 2019-06-28 |
US20160225913A1 (en) | 2016-08-04 |
TW201513365A (zh) | 2015-04-01 |
TW201513346A (zh) | 2015-04-01 |
EP3043389A1 (en) | 2016-07-13 |
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