WO2015014071A1 - 掩模板 - Google Patents

掩模板 Download PDF

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Publication number
WO2015014071A1
WO2015014071A1 PCT/CN2013/089314 CN2013089314W WO2015014071A1 WO 2015014071 A1 WO2015014071 A1 WO 2015014071A1 CN 2013089314 W CN2013089314 W CN 2013089314W WO 2015014071 A1 WO2015014071 A1 WO 2015014071A1
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Prior art keywords
light
mask plate
transmitting
mask
plate according
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PCT/CN2013/089314
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English (en)
French (fr)
Inventor
郭建
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Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device

Definitions

  • Embodiments of the invention relate to a mask. Background technique
  • the via size of the film layer provided on the substrate in the liquid crystal display cannot be miniaturized.
  • the size R of the transparent region 7 of the mask can only be greater than or equal to the resolution of the exposure machine due to the limitation of the resolution; and, the incident light 5 is in the transparent region 7 of the mask.
  • the edge is diffracted, and the diffracted ray extends to the position of the exposed edge 10 of the photoresist 3 as shown in Fig. 2, causing the exposure size of the photoresist 3 to be too large and the slope of the exposure edge 10 to be too gentle.
  • the etching process When the etching process is performed, while the film layer 2 is etched away to form the via holes 12, a portion of the photoresist 3 is also etched (the amount obtained by subtracting a from c as shown in FIG. 2). The partial etching of the photoresist 3 will cause the film layer 2 to be etched away by an amount of 2b, which eventually causes the via 12 to be oversized. It should be noted that, when the etching process is performed, since the slope of the exposed edge 10 is too gentle, the photoresist 3 is more easily etched, resulting in more photoresist 3 being etched, so that the exposed The size of the via 12 formed after the film layer 2 is etched is larger.
  • Embodiments of the present invention provide a mask comprising a structure that is disposed in a light-transmitting region of a reticle and disposed on an edge of the light-transmitting region to reduce diffraction of transmitted light.
  • the structure is a laminated light-transmissive film comprising overlapping multilayer light-transmissive films, and the light-transmissive pore sizes of the respective light-transmissive films are sequentially increased or decreased.
  • the light transmission hole has a circular shape, and the light transmission hole has a diameter of the circular shape;
  • the light transmission hole has a rectangular shape, and the light transmission hole has a side length of one side of the rectangular shape.
  • the central axes of the light transmissive films of the layers are coaxial.
  • each of the light transmissive films is in intimate contact with the edge of the light transmissive region of the mask. In one example, the light transmittance of each of the light transmissive films is from 20% to 60%.
  • the structure is a diffractive protrusion that protrudes from an edge of the light-transmitting region toward the inside of the light-transmitting region.
  • the distance between the tips of at least two adjacent diffractive protrusions is less than the resolution of the exposure machine.
  • the distance between the tips of the two adjacent diffractive protrusions is less than 50% of the resolution of the exposure machine.
  • the light transmissive region of the reticle includes one or more diffraction protrusions.
  • the shape of the diffractive protrusion is: a triangle, a polygon, or a profile having a protrusion.
  • the diffractive protrusion is in intimate contact with an edge of the light transmissive region of the mask.
  • FIG. 1 is a structural view of a prior art mask
  • FIG. 2 is a schematic diagram showing the principle of forming a via hole in the prior art
  • FIG. 3 is a schematic diagram showing the principle of forming a via hole according to an embodiment of the present invention.
  • FIG. 4 is a structural view of a mask according to an embodiment of the present invention. detailed description
  • One of the objects of embodiments of the present invention is to provide a mask to solve the formed via size.
  • the problem is too big.
  • An embodiment of the present invention provides a mask, as shown in the mask of FIG. 4, a laminated transparent film 6 of the mask 9 is disposed in the transparent region 7 of the mask of the mask 9.
  • the laminated transparent film 6 includes The multilayered light-transmissive film is overlapped, and the central axes of the light-transmissive films of the respective layers are, for example, coaxial.
  • the light transmittance of each layer of the light transmissive film may be 20% to 60%, etc., and each of the light transmissive films is closely connected to the edge of the transparent region 7 of the mask of the mask 9 and the layers are transparent.
  • the films respectively have light-transmitting holes, and the dimensional relationship between the sizes of the light-transmitting holes (for example, the diameter of the circular light-transmissive holes or the side length of one side of the rectangular light-transmitting holes) may be sequentially increased or decreased.
  • the light-transmitting holes of the two or more transparent films may also have the same size.
  • the light-transmitting region 7 of the mask 9 has a multiple transmittance, and the edge transmittance closer to the light-transmitting region 7 of the mask is lower.
  • the angle of the light diffracted toward the edge of the transparent region 7 of the mask is smaller, and therefore the incident light of the laminated transparent film 6 in the transparent region 7 of the mask is transmitted.
  • the diffraction angle of 5 is significantly smaller than the diffraction angle of the incident light 5 passing only through the light-transmitting region 7 of the mask, which causes the diffracted light intensity to be greatly weakened, so that the diffracted light does not spread to the photoresist 3 as shown in FIG.
  • the position of the exposed edge 10 is extended only to the position of the exposed edge 11 of the photoresist 3 as shown in FIG. 3, and the exposed edge 11 is formed with a hole which is significantly smaller than the hole formed by the exposed edge 10.
  • the laminated transparent film 6 may be parallel to the mask 9 (ie perpendicular to the incident light 5), or perpendicular to the mask 9;
  • the laminated light-transmissive film 6 and the mask 9 are flush with respect to the side of the object to be exposed.
  • the laminated light-transmissive film 6 is closely connected to at least one side of the light-transmitting region 7 of the mask 9 (for example, the light-transmitting region 7 of the mask 9 is square, which has 4 sides); in one example, The laminated light-transmissive film 6 is closely connected to all sides of the light-transmitting region of the mask.
  • the shape of the laminated light-transmissive film 6 is the same as that of the light-transmitting region 7 of the mask 9 so as to be able to be tightly connected.
  • the stacking height of the stacked light-transmissive film 6 is equal to the thickness of the light-transmitting region 7 of the mask 9.
  • the size of the finally formed via holes 14 is significantly smaller than that of the via holes 12 formed in Fig. 1.
  • the diffraction angle of the light ray 5 of the laminated light-transmissive film 6 becomes small and diffracted.
  • the light intensity is weakened, so the slope of the exposed edge 11 is also significantly steeper than the slope of the exposed edge 10, and the exposed edge 11 having a relatively steep slope has a stronger resistance to etching. Therefore, when the etching process is performed, since the slope of the exposed edge 11 is relatively steep, the photoresist 3 is not easily etched away, so that the etched photoresist 3 is relatively small, and the exposed film layer 2 is The size of the via 14 formed after etching is not enlarged.
  • the light transmissive film included in the laminated light-transmissive film 6 may be any light transmissive or semi-transparent material, for example, chromium oxide, molybdenum silicon oxynitride or the like.
  • the light-transmissive film included in the laminated light-transmissive film 6 can be disposed on the edge of the light-transmitting region 7 of the mask by a known exposure, etching, or the like.
  • the mask 9 shown in Fig. 4 can be used instead of the mask 9 shown in Fig. 3 and exposed through the mask 13, followed by an etching process.
  • the exposure and etching processes herein are similar to the exposure and etching processes described above, with the difference being in the structure of the mask 13.
  • a triangular protrusion protruding from the edge of the light-transmitting region 7 toward the inside of the light-transmitting region 7 as shown in FIG. 4 may be disposed in the light-transmitting region 7 of the mask plate 13; of course, the protrusion may also have a polygonal shape, Other shapes such as wavy shapes and shapes.
  • the protrusions are closely connected to at least one side of the mask light-transmissive region 7 of the mask 13. Actually, the effect of the protrusions is to cause the incident light rays 5 to be diffracted, so that such protrusions can be referred to as diffraction protrusions 8.
  • the light-transmitting region 7 of the mask 13 is square, and the four sides of the square are closely formed with triangular protrusions.
  • the triangular protrusions on the edge of the square light-transmissive region 7 are all equilateral triangles, and are symmetric with respect to the diagonal of the square.
  • the distance X between the tips of at least two adjacent diffractive protrusions 8 is less than the resolution of the exposure machine (for example: less than 50% of the resolution of the exposure machine) .
  • the incident light 5 passing through the edge of the transparent region 7 of the mask is blocked by the diffraction projection 8 so as to pass through the edge of the transparent region 7 of the mask.
  • the light intensity of the incident ray 5 is greatly attenuated, so that diffraction as shown in Fig. 2 does not occur.
  • the incident light rays 5 that have passed through the gaps between the adjacent diffraction protrusions 8 are diffracted, so that the photoresist 3 at a position corresponding to the gap between the adjacent diffraction protrusions 8 is retained, and thus finally in the film layer 2
  • the via 14 formed on the surface not only does not enlarge, but also shrinks.
  • the light-transmissive film included in the diffraction protrusion 8 may be any light-transmissive or semi-transmissive material.
  • the material forming the diffraction protrusion 8 is chromium oxide or molybdenum silicon oxynitride.
  • the diffractive protrusion 8 can be a film.
  • the diffraction protrusions 8 can be disposed on the edge of the light-transmissive region 7 of the mask by a known exposure, etching, or the like.
  • a light-emitting region 7 of the mask may be provided with a diffraction protrusion 8 as shown in FIG. 4, or two or more diffraction protrusions 8 may be disposed; and, the diffraction protrusions 8 of each layer may have overlap or Non-overlapping relationships.
  • the light transmissive region of the reticle may also be referred to as a light transmissive aperture of the reticle, for example
  • a structure capable of reducing diffraction of transmitted light for example, a laminated light-transmissive film, a diffraction protrusion
  • a structure capable of reducing diffraction of transmitted light for example, a laminated light-transmissive film, a diffraction protrusion
  • the holes formed by the exposure on the photoresist are not enlarged as much as possible to ensure the miniaturization of the via holes formed after the etching process, satisfy the requirements of the fine wiring, and effectively improve the resolution of the liquid crystal display.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

一种掩模板（9）包括位于掩模板（9）的透光区域（7）中且设置在透光区域（7）的边缘上的能够减少透射光衍射的结构（6）。

Description

掩模板 技术领域
本发明的实施例涉及掩模板。 背景技术
目前， 在生产液晶显示器的过程中， 受到设计、 曝光和刻蚀工艺的限制， 液晶显示器中的基板上设置的膜层的过孔尺寸无法实现小型化。 具体而言， 如图 1所示， 由于受到分辨率的限制， 掩模板的透光区域 7的尺寸 R只能大 于等于曝光机分辨率； 并且， 入射光线 5会在掩模板透光区域 7的边缘产生 衍射，衍射光线扩展到如图 2所示的光刻胶 3的曝光边缘 10的位置，造成光 刻胶 3的曝光尺寸偏大并且曝光边缘 10的坡度过于平緩。当进行刻蚀工艺时， 在刻蚀掉膜层 2以形成过孔 12的同时， 还会刻蚀掉一部分光刻胶 3 (如图 2 中所示的 c减去 a所得的量 ) , 这部分光刻胶 3被刻蚀掉将导致膜层 2被多 刻蚀掉尺寸为 2b的量， 最终造成过孔 12的尺寸偏大。 需要说明的是， 当进 行刻蚀工艺时， 由于曝光边缘 10的坡度过于平緩， 因此光刻胶 3更容易被刻 蚀掉， 导致被刻蚀掉的光刻胶 3更多， 使得暴露出的膜层 2被刻蚀后所形成 的过孔 12的尺寸更大。
由于过孔 12的尺寸无法实现小型化， 因此无法满足精细化布线的要求， 成为提高液晶显示器分辨率的瓶颈。 发明内容
本发明的实施例提供一种掩模板， 包括位于掩模板的透光区域中且设置 在所述透光区域的边缘上的能够减少透射光衍射的结构。
在一个示例中， 所述结构为层叠透光膜， 包含有重叠的多层透光膜， 各 层透光膜的透光孔尺寸依次递增或递减。
在一个示例中， 所述透光孔成圓形， 所述透光孔尺寸为该圓形的直径； 或，
所述透光孔成矩形， 所述透光孔尺寸为所述矩形一边的边长。 在一个示例中 , 所述各层透光膜的中心轴同轴。
在一个示例中 ,各层透光膜均与所述掩模板的透光区域的边缘紧密接触。 在一个示例中 , 各层透光膜的透光率为 20%至 60%。
在一个示例中 , 所述结构为从所述透光区域的边缘向所述透光区域内部 突出的衍射突起。
在一个示例中 , 至少有两个相邻的衍射突起的顶端之间的距离小于曝光 机的分辨率。
在一个示例中 , 所述两个相邻的衍射突起的顶端之间的距离在曝光机分 辨率的 50%以下。
在一个示例中 , 所述掩模板的透光区域中包含一层或一层以上的衍射突 起。
在一个示例中 , 所述衍射突起的形状为： 三角形、 多边形或具有突起的 异形。
在一个示例中 ,所述衍射突起与所述掩模板的透光区域的边缘紧密接触。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例或现有技 术描述中所需要使用的附图作筒单地介绍， 显而易见地， 下面描述中的附图 仅仅涉及本发明的一些实施例， 并非对本发明的限制。
图 1为现有技术的掩模板结构图；
图 2为现有技术形成过孔的原理示意图；
图 3为根据本发明实施例形成过孔的原理示意图；
图 4为根据本发明实施例的掩模板结构图。 具体实施方式
下面将结合附图，对本发明实施例中的技术方案进行清楚、完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没有做出创造性劳动前提下 所获得的所有其他实施例， 都属于本发明保护的范围。
本发明实施例的目的之一在于提供一种掩模板， 以解决形成的过孔尺寸 偏大的问题。
本发明的实施例提供一种掩模板， 如图 4中掩模板所示， 掩模板 9的掩 模板透光区域 7中设置有掩模板 9的层叠透光膜 6, 层叠透光膜 6包含有重 叠的多层透光膜， 并且各层透光膜的中心轴例如是同轴的。 在一个示例中， 各层透光膜的透光率可以为 20%至 60%等，每层透光膜均与掩模板 9的掩模 板透光区域 7的边缘紧密连接， 并且各层透光膜的分别具有透光孔， 这些透 光孔的尺寸 （例如： 圓形透光孔的直径， 或矩形透光孔的一边的边长）之间 的尺寸关系可以是依次递增或递减。 当然， 其中的两层或多层透光膜的透光 孔也可以具有相同的尺寸。
由此， 掩模板 9的透光区域 7具有多重透过率， 并且越靠近掩模板透光 区域 7的边缘透过率越低。 这样， 入射光线 5经过掩模板透光区域 7时， 越 靠近掩模板透光区域 7的边缘光线衍射的角度越小， 因此透过掩模板透光区 域 7中的层叠透光膜 6的入射光线 5的衍射角度明显小于只透过掩模板透光 区域 7的入射光线 5的衍射角度， 这使得衍射光强被大幅度削弱， 因此衍射 光线不会扩展到如图 2所示的光刻胶 3的曝光边缘 10的位置，而是只能扩展 到如图 3所示的光刻胶 3的曝光边缘 11的位置， 曝光边缘 11所形成的孔明 显小于曝光边缘 10所形成的孔。
当然， 为了减小掩模板 9的透光区域 7边缘对入射光 5的衍射作用， 层 叠透光膜 6可以平行于掩模板 9 (即垂直于入射光 5 ) ,也可以垂直于掩模板 9; 例如， 层叠透光膜 6与掩模板 9在靠近待曝光物体一侧平齐。
进一步的， 层叠透光膜 6与所述掩模板 9的透光区域 7的至少一边紧密 连接（例如： 掩模板 9的透光区域 7为正方形， 其具有 4条边） ； 在一个示 例中， 层叠透光膜 6与所述掩模板透光区域的所有边均紧密连接。
进一步的， 层叠透光膜 6的形状与掩模板 9的透光区域 7的形状相同， 以便能够紧密连接。
进一步地， 层叠透光膜 6平行于掩模板 9层时， 叠透光膜 6的堆叠高度 等于掩模板 9的透光区域 7的厚度。
因此， 在进行刻蚀工艺时， 在刻蚀掉膜层 2以形成过孔 14时， 最终形成 的过孔 14的尺寸就会明显小于图 1中形成的过孔 12的尺寸。
需要说明的是， 由于层叠透光膜 6 射光线 5的衍射角度变小、 衍射 光强变弱， 所以形成的曝光边缘 11的坡度也明显比曝光边缘 10的坡度陡， 坡度相对陡的曝光边缘 11对刻蚀具有更强的抗拒作用。 因此，在进行刻蚀工 艺时， 由于曝光边缘 11的坡度相对陡， 因此光刻胶 3不容易被刻蚀掉，使得 被刻蚀掉的光刻胶 3相对少，暴露出的膜层 2被刻蚀后所形成的过孔 14的尺 寸就不会被扩大。
通常， 层叠透光膜 6所包含的透光膜可以为任意透光或半透光的材质， 例如： 氧化铬、 钼硅氮氧化合物等。 层叠透光膜 6所包含的透光膜可以通过 已知的曝光、 刻蚀等工艺设置在掩模板透光区域 7的边缘上。
根据本发明另一实施例，也可以用图 4所示的掩模板 13代替图 3所示的 掩模板 9, 并通过掩模板 13进行曝光， 之后进行刻蚀工艺。 这里的曝光、 刻 蚀工艺与前述的曝光、刻蚀工艺类似，区别在于掩模板 13的结构。具体而言， 可以在掩模板 13的透光区域 7中设置如图 4所示的从透光区域 7的边缘朝向 透光区域 7的内部突出的三角形突起； 当然， 该突起也可以具有多边形、 波 浪形、异形等其它形状， 。 该突起与掩模板 13的掩模板透光区域 7至少一边 紧密连接。 实际上， 所述突起的作用是使入射光线 5发生衍射， 因此可以将 这种突起称为衍射突起 8。
进一步的，掩模板 13的透光区域 7为正方形，正方形四条边上都紧密形 成有三角形突起。
进一步的， 正方形透光区域 7边缘上的三角形突起均为等边三角形， 且 关于正方形的对角线对称。
在一个示例中， 在掩模板透光区域 7中， 至少有两个相邻的衍射突起 8 的顶端之间的距离 X小于曝光机的分辨率（例如： 在曝光机分辨率的 50%以 下） 。 这样， 在入射光线 5透过掩模板透光区域 7时， 要透过掩模板透光区 域 7的边缘的入射光线 5会被衍射突起 8挡住， 使得透过掩模板透光区域 7 的边缘的入射光线 5的光强被大幅度削弱，因此不会发生如图 2所示的衍射。 并且， 透过相邻的衍射突起 8之间空隙的入射光线 5会发生衍射， 使得与相 邻的衍射突起 8之间空隙相对应的位置的光刻胶 3得以保留， 因此最终在膜 层 2上形成的过孔 14不但不会扩大， 而且还会缩小。
衍射突起 8所包含的透光膜可以为任意的透光或半透光材质例如， 形成 衍射突起 8的材料为氧化铬、 钼硅氮氧化合物。 例如， 衍射突起 8可以为薄膜。 衍射突起 8可以通过已知的曝光、 刻蚀 等工艺设置在掩模板透光区域 7的边缘上。 另外， 掩模板透光区域 7中可以 设置有如图 4所示的一层衍射突起 8 , 也可以设置两层或两层以上的衍射突 起 8; 并且， 各层衍射突起 8之间可以具有重叠或不重叠的关系。
所述掩模板的透光区域例如也可称为掩模板的透光孔。
因此， 在根据本发明实施例的掩模板中， 掩模板的透光区域中设置有能 够减少透射光衍射的结构 （例如层叠透光膜、 衍射突起） ， 该结构通过控制 透射光的衍射， 使得在光刻胶上因曝光而产生的孔尽量不扩大， 以保证刻蚀 工艺后形成的过孔实现小型化， 满足精细化布线的要求， 有效提高液晶显示 器分辨率。
虽然上文中已经用一般性说明及具体实施方式， 对本发明作了详尽的描 述， 但在本发明基础上， 可以对之作一些修改或改进， 这对本领域技术人员 而言是显而易见的。 因此， 在不偏离本发明精神的基础上所做的这些修改或 改进， 均属于本发明要求保护的范围。

Claims

权利要求书
1、一种掩模板， 包括位于掩模板的透光区域中且设置在所述透光区域的 边缘上的能够减少透射光衍射的结构。
2、 根据权利要求 1所述的掩模板， 其中，
所述结构为层叠透光膜， 包含有重叠的多层透光膜， 各层透光膜的透光 孔尺寸依次递增或递减。
3、 根据权利要求 2所述的掩模板， 其中，
所述透光孔成圓形， 所述透光孔尺寸为该圓形的直径； 或，
所述透光孔成矩形， 所述透光孔尺寸为所述矩形一边的边长。
4、根据权利要求 2或 3所述的掩模板， 其中， 所述各层透光膜的中心轴 同轴。
5、 根据权利要求 2至 4中任一项所述的掩模板， 其中，
各层透光膜均与所述掩模板的透光区域的边缘紧密接触。
6、根据权利要求 2至 5中任一项所述的掩模板， 其中， 各层透光膜的透 光率为 20%至 60%。
7、根据权利要求 1所述的掩模板， 其中， 所述结构为从所述透光区域的 边缘向所述透光区域内部突出的衍射突起。
8、根据权利要求 7所述的掩模板， 其中， 至少有两个相邻的衍射突起的 顶端之间的距离小于曝光机的分辨率。
9、根据权利要求 8所述的掩模板， 其中， 所述两个相邻的衍射突起的顶 端之间的距离在曝光机分辨率的 50%以下。
10、 根据权利要求 7至 9中任一项所述的掩模板， 其中， 所述掩模板的 透光区域中包含一层或一层以上的衍射突起。
11、 根据权利要求 7至 10中任一项所述的掩模板， 其中，
所述衍射突起的形状为： 三角形、 多边形或具有突起的异形。
12、根据权利要求 7至 11中任一项所述的掩模板， 其中， 所述衍射突起 与所述掩模板的透光区域的边缘紧密接触。
PCT/CN2013/089314 2013-07-31 2013-12-13 掩模板 Ceased WO2015014071A1 (zh)

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