WO2014206965A1 - Diode électroluminescente organique et procédé de fabrication d'une diode électroluminescente organique - Google Patents

Diode électroluminescente organique et procédé de fabrication d'une diode électroluminescente organique Download PDF

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Publication number
WO2014206965A1
WO2014206965A1 PCT/EP2014/063241 EP2014063241W WO2014206965A1 WO 2014206965 A1 WO2014206965 A1 WO 2014206965A1 EP 2014063241 W EP2014063241 W EP 2014063241W WO 2014206965 A1 WO2014206965 A1 WO 2014206965A1
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WO
WIPO (PCT)
Prior art keywords
contact
layer
organic light
optoelectronic
cover body
Prior art date
Application number
PCT/EP2014/063241
Other languages
German (de)
English (en)
Inventor
Simon SCHICKTANZ
Jörg FARRNBACHER
Egbert HÖFLING
Stefan GSCHLÖSSL
Andrew Ingle
Kilian REGAU
Original Assignee
Osram Oled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2014206965A1 publication Critical patent/WO2014206965A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70—Testing, e.g. accelerated lifetime tests
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/88—Terminals, e.g. bond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/55—Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/58—Fixed connections for rigid printed circuits or like structures characterised by the terminals terminals for insertion into holes
    • H01R12/585—Terminals having a press fit or a compliant portion and a shank passing through a hole in the printed circuit board
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate

Definitions

  • the invention relates to an organic light-emitting diode and a method for producing an organic light-emitting diode.
  • Conventional optoelectronic components for example organic light-emitting diodes (OLEDs), are
  • a cover body such as a cover plate constructed.
  • a heat sink and / or a heat spreader for example a metal plate or a metal foil or a graphite layer, for example a graphite foil or a graphite laminate, is laminated onto the cover glass.
  • the cover plate serves as mechanical protection as well as a further moisture barrier and, like the substrate, usually consists of solid glass.
  • the cover glass is usually laminated over the entire surface of the substrate during the manufacturing process.
  • the encapsulation layer is formed between the cover plate and the substrate and typically extends over the entire substrate.
  • the substrate and the cover plate each extend in one piece over several
  • the coverslip is removed over the contacts. Thereafter, if appropriate, the encapsulation layer on the contacts, for example by means of laser ablation are entfe nt. Only after these process steps can the fully processed and, in particular, isolated optoelectronic component be electrically contacted and electro-optically
  • electro-optical measurements can be relatively late in the production process and with increased effort in handling a few optoelectronic
  • a metal plate as a heat sink or heat spreader can not be applied directly to the encapsulation layer since the metal plate can not be separated within the component package to expose the contacts.
  • the exposed contacts of the optoelectronic devices can be bonded by means of spring pins, conductive adhesive, conductive paste, crimps, etc. or via ACF (Anisotropic Conductive Film)
  • Circuit boards which provide a solderable metallic surface for soldering other contact elements (e.g., pins, eyelets, cables, etc.) are contacted at almost any location.
  • the contact elements are not formed so that they inherently have an electrically isolated distance to lateral outer edges of the optoelectronic device. Therefore, due to various contact elements (e.g., pins, eyelets, cables, etc.) are contacted at almost any location.
  • the contact elements are not formed so that they inherently have an electrically isolated distance to lateral outer edges of the optoelectronic device. Therefore, due to various
  • Optoelectronic component predetermined air
  • an organic light emitting diode is provided that is simple
  • the organic light-emitting diode is electrically contacted and / or characterizable.
  • Optoelectronic device in particular an organic Iichtemittierende diode provided.
  • Optoelectronic component has a carrier body. Above the carrier body is an optoelectronic
  • Layer structure has at least one contact area for electrically contacting the optoelectronic layer structure.
  • the optoelectronic component has at least one
  • Contact recess which extends through the support body and / or the cover body and in which at least a portion of the contact area is exposed.
  • the exposure of the contact area (s) allows electrical contact and electro-optic contact
  • An adhesive such as a laminating adhesive, for securing the
  • Cover body can be applied flat on the corresponding substrate, which contributes to a simple manufacture of the optoelectronic device.
  • An electrical contacting of the optoelectronic component through the contact recesses can be carried out with virtually no structure on the optoelectronic component, wherein a mechanical holding function of the corresponding contact can be integrated by means of the contact recesses.
  • the cover body which forms the walls of the contact recesses, allows easy compliance with predetermined
  • Optoelectronic layer structure on an encapsulation layer and / or an adhesive layer on an encapsulation layer and / or an adhesive layer.
  • the contact recess extends through the encapsulation layer and / or through the adhesive layer.
  • the encapsulation layer serves to protect the optically functional, for example organic, layers, for example from moisture.
  • the Adhesive layer serves, for example, for fastening the cover body.
  • the adhesive layer may, for example, be applied flat to the encapsulation layer.
  • the cover body comprises or is formed from metal or glass. If the cover body comprises or is formed of metal, the cover body may function as a heat sink or as a heat spreader. If the covering body has glass, then the covering body can be separated by scribing and breaking. If the cover body has metal, then the
  • Covering body for example by means of cutting
  • the cover body may comprise metal and glass.
  • the covering body can be a glass body with a metal layer, for example a metal foil, thereon.
  • Layers of the optoelectronic layer structure a distance to an outer side edge of the optoelectronic device. The distance is greater than or equal to one
  • an electrically insulating material may be formed.
  • material can be a part of
  • Be encapsulation layer This helps to ensure that the prescribed safety standards, such as creepage distances and clearances, can be met.
  • the carrier body and the cover body on exposed side edges and are formed flush with each other at the side edges. This contributes to a particularly robust construction of the optoelectronic component, since the cover body and the cover body protect the carrier body up to the edges of the carrier body. Furthermore, this can lead to a simple manufacture of the Optoelectronic device contribute because the optoelectronic device then simply along
  • the optoelectronic component at least one plug element.
  • the plug element is arranged in the contact recess and designed so that by means of
  • Plug element of the contact area is electrically ko aktierbar.
  • the or the connector elements may, for example, correspondingly sized spring pins, pins, springs, brackets, straps, etc. have.
  • electrically conductive cables which are guided through the contact recesses, are contacted with the contact areas electrically.
  • the plug elements can be ionized in the contact recesses with suitable dimensioning, for example by means of barbs or spring clips, e.g. known by (mini) banana plugs, mechanical.
  • optoelectronic device has a sleeve on in the
  • Contact recess is arranged and is formed so that by means of the sleeve, the contact region electrically
  • the sleeves can be connected, for example by means of conductive adhesive or conductive paste and / or by soldering to the corresponding contact areas.
  • the sleeves can, for example, to increase the
  • the plug elements can then be plugged or clamped into the sleeves.
  • the plug elements have an electrically isolated distance from the outer edge by the predetermined distance from the outer edge of the optoelectronic component, which can be helpful in the case of a standard-compliant design of luminaires.
  • the plug element is disposed in the sleeve.
  • the plug element is mechanically fixed in the contact recess by means of the sleeve and is electrically coupled to the contact region.
  • Plug body are the plug element and at least one further plug element attached, wherein the plug elements are arranged in the corresponding contact recesses.
  • one, two or more other plug-in elements can be attached to or in the
  • Plug body attached, for example by means of MID technology. Because of two or more over the
  • Plug body firmly coupled to each other plug elements, the mechanical cold forces of the plug body in the corresponding contact recesses are multiplied. Furthermore, via the plug body and / or the arrangement of
  • Plug element is mechanically fixed in the contact recess.
  • the latching element in the undercut constitutes a positive connection between the plug element and the remaining optoelectronic component. This can easily contribute to a safe and effective mechanical coupling of the plug element with the contact recess.
  • the undercut can be formed for example by a portion of the contact recess in the cover body.
  • the plug element has the latching element, which in the contact recess
  • the latching element can be formed, for example, by a widened region of the plug element.
  • Opto-electronic device in particular the organic light-emitting diode provided.
  • the carrier body is provided.
  • the optoelectronic layer structure which comprises at least the contact region for electrically contacting the optoelectronic
  • Layer structure is formed over the carrier body.
  • the cover body is over the
  • the at least one is in the carrier body and / or the cover body
  • Contact recess formed so that it extends through the support body and / or the cover body and that at least a part of the contact area is exposed in it.
  • the optoelectronic layer structure is formed on a first side of the carrier body and the contact recess is from a second side of the
  • Carrier body which faces away from the first side, formed out to the contact area.
  • the first side formed out to the contact area.
  • Cover body over the first side of the carrier body over the Optoelectronic layer structure and optionally formed over the encapsulation layer and the
  • Contact recess is from one of the carrier body
  • Cover body can be formed so deep that the
  • the sleeve for example, by means of the plug element, the sleeve
  • the contact recess can also extend through the contact region, so that only a part of the contact region forming a section of the wall of the contact recess is exposed and can be contacted electrically.
  • Cover body formed.
  • the cover body can then be aligned so arranged over the optoelectronic layer structure that the contact area with the
  • the contact recess can be formed by means of a nano-, pico-, or femto-second laser.
  • the laser drilling can be performed before or after arranging the cover body.
  • the cover body can be formed by means of a nano-, pico-, or femto-second laser.
  • Adhesive layer and / or the encapsulation layer Adhesive layer and / or the encapsulation layer
  • the contact recess by means of laser drilling can be carried out particularly quickly.
  • the contact recess may be formed by mechanical drilling, by water or sand blasting, or by chemical etching.
  • the contact recess may be formed by mechanical drilling, by water or sand blasting, or by chemical etching.
  • Optoelectronic layer structure on an encapsulation layer and / or an adhesive layer, which cover at least a portion of the contact area.
  • Contact recess serve in a removal process as a mask for the encapsulation layer and / or the adhesive layer. In the ablation process, areas of the
  • the contact recess in the cover body is formed such that initially only a part of the adhesive layer is exposed therein. Below this part of the adhesive layer is a part of the encapsulation layer, which is formed over the part of the contact area to be covered.
  • the optoelectronic component can then a
  • Ablation process for example, an etching process
  • the covering body serving as a mask.
  • the etching process the part of the adhesive layer and the part of the encapsulation layer formed over the exposed part of the contact area are then removed, so that the contact area in the
  • Optoelectronic component in a composite of a plurality of optoelectronic components for example i a
  • the carrier body and / or the cover body initially extend in one piece via a plurality of optoelectronic components in the component network.
  • the optoelectronic components in the component network each have at least one contact recess.
  • Optoelectronic components in Baue1ementverbund be contacted via the contact recesses electrically and tested.
  • the testing of the optoelectronic components in the component network can, for example, be used to optically characterize the optoelectronic components. For example, during testing, a
  • Wavelengths, a brightness at a given power and / or a power requirement at a given brightness can be determined.
  • the optoelectronic components can be singulated, for example by means of scribing, breaking, sawing, cutting, for example by means of a laser.
  • the electrical contact via the contact recesses can, for example, by means of one, two or more of the
  • the contact area is
  • a plug member having a latching element is arranged in the contact recess, that the latching element is arranged in the undercut and the plug element is in direct physical contact with the encapsulation layer and / or the adhesive layer.
  • the male member is rotated about an axis perpendicular to the contact area. Due to the friction between the plug element and the encapsulation layer and / or the Ha tstoff Anlagen Anlagen the encapsulation layer and / or the adhesive layer are removed and the contact area is exposed. This can help to expose the contact region in a particularly efficient manner, in particular if, while the contact recess has already been formed, it is still separated from the encapsulation layer or layer. the adhesive layer is covered.
  • optoelectronic component a sectional view of an embodiment of an optoelectronic device; a plan view of an embodiment of a composite component; a Schni tdarStellung an embodiment of an optoelectronic device during a process for producing the optoelectronic device; a plan view of an embodiment of a composite component during a process for producing an optoelectronic device; a sectional view of the optoelectronic component according to FIG. 4 during the process for producing the optoelectronic component; a sectional view of the optoelectronic component according to FIG. 6 during the method for producing the optoelectronic component, - a sectional view of the optoelectronic component according to FIG.
  • Component with sleeves an embodiment of an optoelectronic component with a plug body
  • Connector elements an embodiment of an optoelectronic component with a plug body
  • Connector elements an embodiment of a plug element; a bottom view of the plug element according to FIG.
  • connection of a first body with a second body may be positive, non-positive and / or cohesive.
  • the connections may be detachable, i. reversible.
  • a reversible, interlocking connection can be realized, for example, as a screw connection, a hook-and-loop fastener, a clamp, a latching connection and / or by means of a use of clamps.
  • the connections may also be non-detachable, i. irreversible. A non-detachable connection can be separated only by destroying the connecting means.
  • Embodiments can be realized an irreversible, conclusive connection, for example, as a riveted joint, an adhesive bond or a solder joint.
  • a positive connection a relative movement of the two Body prevented due to their mutually corresponding shapes in at least one direction.
  • a hook in an eyelet may be restricted in movement in at least one spatial direction.
  • a positive connection can be realized, for example, as a screw connection, a hook-and-loop fastener, a clamp, a latching connection and / or by means of clamps.
  • non-positive connection for example, a
  • Bottle cork in a bottleneck or a dowel with an oversize fit in a corresponding dowel hole can also be used as a press fit
  • the first body may be connected to the second body by means of atomic and / or molecular forces.
  • Cohesive compounds can often be non-releasable compounds.
  • a cohesive connection In various embodiments, a cohesive connection
  • a solder joint such as a glass solder or a Metalotes, or as a welded joint.
  • An optoelectronic component may be in different
  • an electromagnetic radiation emitting device or an electromagnetic
  • Electromagnetic radiation absorbing device may for example be a solar cell.
  • a component emitting electromagnetic radiation may be a semiconductor device emitting electromagnetic radiation and / or as a diode emitting electromagnetic radiation, as a diode emitting organic electromagnetic radiation, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • light-emitting diode for example, as a light-emitting diode (light emitting diode, LED) as an organic light-emitting diode (organic light emitting diode, OLED), as light-emitting
  • LED light emitting diode
  • OLED organic light emitting diode
  • Component may be part of an integrated circuit in various embodiments. Furthermore, a
  • Fig. 1 shows a conventional optoelectronic device 1, in particular a conventional organic
  • the conventional optoelectronic component 1 has a carrier body 12, for example a substrate. On the carrier body 12 is a
  • the optoelectronic layer structure formed.
  • the optoelectronic layer structure has a first one
  • Electrode layer 14 having a first contact electrode 16, a second contact electrode 18 and a first
  • Electrode section 20 has.
  • the second contact electrode 18 is connected to the first electrode section 20 of FIG.
  • the first electrode portion 20 is from the first electrode
  • Isolation barrier 21 electrically isolated.
  • Above the first electrode section 20 is a functional one
  • Layer structure 22 for example an organic compound
  • Layer structure 22 may be, for example, one, two or more Partial layers have, as explained in more detail below with reference to Figure 19.
  • Partial layers as explained in more detail below with reference to Figure 19.
  • a second electrode portion 23 of the optoelectronic layer structure is formed, which is electrically coupled to the first contact electrode 16.
  • the first electrode section 20 serves, for example, as the anode or cathode of the optoelectronic layer structure.
  • the second electrode section 23 serves to correspond to the first electrode section as the cathode or anode of the optoelectronic layer structure.
  • An encapsulation layer 24 of the optoelectronic layer structure which encapsulates the optoelectronic layer structure, is formed over the second electrode section 23 and partially over the first contact electrode 16 and partially over the second contact electrode 18.
  • Encapsulation layer 24 a first recess of the encapsulation layer 24 are formed above the first contact electrode 16 and a second recess of the encapsulation layer 24 is formed over the second contact electrode 18. In the first recess of the encapsulation layer 24, a first contact region 32 is exposed and in the second recess of the
  • Encapsulation layer 24 a second contact region 34 is exposed.
  • the first contact region 32 serves for
  • the adhesive layer 36 comprises, for example, an adhesive, for example an adhesive,
  • a laminating adhesive and / or a resin for example, a laminating adhesive and / or a resin.
  • a cover body 38 Above the adhesive layer 36 is a cover body 38
  • the adhesive layer 36 serves to fasten the cover body 38 to the encapsulation layer 24.
  • the cover body 38 has, for example, glass and / or metal.
  • the cover body 38 may be formed substantially of glass and a thin metal layer, for example, have a metal foil on the glass body.
  • the metal layer 38 can be arranged after scribing and breaking the cover body on this.
  • the metal layer may also be a
  • the graphite layer and / or a protective layer for protecting the graphite layer on the cover 38 may be arranged.
  • the graphite layer can be formed, for example, from a graphite foil or a Graphi laminate.
  • the cover body 38 serves to protect the conventional optoelectronic
  • Component 1 for example, before mechanical
  • the cover body 38 may serve for distributing and / or dissipating heat generated in the conventional optoelectronic component 1.
  • the glass of the covering body 38 can serve as protection against external influences
  • the metal layer of the covering body 38 can serve for distributing and / or dissipating the heat arising during operation of the conventional optoelectronic component 1.
  • the adhesive layer 36 may, for example, be applied to the encapsulation layer 24 in a structured manner. That the adhesive layer 36 is structured on the
  • Encapsulation layer 24 is applied, may mean, for example, that the adhesive layer 36 already has a predetermined structure when applied directly.
  • the adhesive layer 36 may be applied in a structured manner by means of a dispensing or printing process.
  • the conventional optoelectronic component 1 is sensitive to external influences in the first contact region 32 and the second contact region 34, since no covering body 38 is provided in these contact regions 32, 34.
  • the conventional optoelectronic component 1 can be any conventional optoelectronic component 1.
  • Process step are exposed, for example by means of an ablation process, for example by means of
  • the carrier body 12 can comprise, for example, glass, for example window glass, quartz, a semiconductor material and / or another suitable material, for example boron silicate, aluminum silicate and / or a standard material from the display industry, or be formed therefrom.
  • the carrier body 12 may have a plastic film or a laminate with one or more plastic films
  • the plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Furthermore, the plastic
  • Polyvinyl chloride PVC
  • polystyrene ⁇ PS polystyrene ⁇ PS
  • polyester and / or polycarbonate PC
  • PET polyethylene terephthalate
  • the carrier body 12 may comprise or be formed from a metal or a metal compound, for example copper, silver, gold, platinum or the like.
  • the metal or a metal compound may also be formed as a metal foil or a metal-coated foil.
  • the carrier body 12 may iron on one or more of the above materials.
  • the carrier body 12 may be translucent or even transparent. Under the term "translucent" or
  • Translucent layer can be in different
  • Embodiments are understood that a layer is permeable to electromagnetic radiation
  • wavelength ranges for example, for light in a wavelength range of visible light (for example, at least in a portion of the
  • Translucent layer in various exemplary embodiments is to be understood as meaning that substantially all of the radiation quantity coupled into a structure ⁇ for example a layer) also originates from the structure
  • transparent or “transparent layer” can be understood in various embodiments that a layer is transparent to light
  • Wavelength range from 380 nm to 780 nm), where in a structure (for example, a layer) coupled
  • layer is decoupled. If, for example, a monochrome or emission-limited optoelectronic component is to be provided, it may be sufficient for the optics to be provided
  • FIG. 2 shows a sectional view of a
  • Embodiment of an optoelectronic component 10 for example, largely the above
  • the optoelectronic component 10 can correspond to conventional optoelectronic component 1, in particular an embodiment of an organic Iichtemittierenden diode.
  • j edoch the in Fig. 2 shown embodiment of the optoelectronic component 10
  • an adhesive layer 36 and a cover 38 which extends to the in Fig. 2 shown lateral outer edges of the support body 12 extend.
  • the optoelectronic component 10 has a first contact recess 42 and a second
  • the contact recesses 42, 44 can be
  • the first and second contact electrodes 16, 18 may be referred to as current-carrying layers of the optoelectronic component 10.
  • the first and second contact electrodes 16, 18 have a distance to an outer edge of the
  • Optoelectronic component 10 The distance is greater than or equal to a predetermined minimum distance.
  • Minimum distance is greater than zero.
  • Parts of the encapsulation layer 24 may be formed. If the encapsulation layer 24 is designed to be electrically insulating, then the first and second contact electrodes 16, 18 and thus the current-carrying layers of the optoelectronic component 10 are of the outer edge of the optoelectronic
  • Component 10 electrically isolated. This can help to comply with simply prescribed safety standards, such as specified clearances and creepage distances,
  • the cover body 38 may be substantially or completely formed of metal. Alternatively, it can the cover body 38 but also as above
  • Outer edges of the cover body 38 and the support body 12 are not formed flush with each other and cut independently and / or sawed.
  • Optoelectronic component 10 is designed to be particularly robust, in particular to external mechanical effects, since both the cover body 38 and the adhesive layer 36 up to the outer edge of the
  • Carrier body 12 extend and thus also the
  • optoelectronic component 10 is formed in the contact regions 32, 34 very stable.
  • FIG. 3 shows a plan view of an embodiment of a device package during a method of the invention.
  • Component group has several, in particular four,
  • Optoelectronic device 10 may correspond.
  • FIGS. 3 shows only four optoelectronic components 10 in the component network. In fact, however, far more optoelectronic components 10 can also be used in one
  • Construction can be made ementverbünd. For example, several hundred optoelectronic components 10 in one Component composite, for example, in a wafer composite produced.
  • the cover body 38 and the carrier body 12 are each formed in one piece and each extend over a plurality of optoelectronic components d r
  • the component composite has several first
  • each optoelectronic component to be singulated is at least one, for example two first contact recesses and at least one, for example two second ones
  • Fig. 4 shows a sectional illustration of the exemplary embodiment of the optoelectronic component 10 according to FIG. 2 during the process for producing the optoelectronic
  • Component 10 On the carrier body 12 is the first
  • Electrode section 20 and the first contact electrode 16, an electrical insulation barrier 21 is arranged.
  • the first electrode layer 14 may have, for example, two or more layered sublayers, for example a first electrically conductive layer and a second electrically conductive layer formed above it
  • the first electrically conductive layer may be formed from a first electrically conductive material, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or TCO or TCOs
  • a first electrically conductive material such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or TCO or TCOs
  • TCO conductive conductive oxide
  • Transparent conductive oxides can be, for example, transparent, conductive substances, For example, metal oxides such as zinc oxide,
  • Tin oxide Tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO), for example ZnO, IN / ZnO, SnZnO or AlZnO.
  • binary metal oxygen compounds such as ZnO, Sn02, or In203 can also be ternary
  • Metal oxygen compounds such as AlZnO,
  • Zn2SnO4 CdSnO3, ZnSnO3, Mgln204, GalnO3, Zn2In205 or
  • In4Sn3012 or mixtures of different transparent conductive oxides to the group of TCOs are and may be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to one
  • the first electrically conductive layer may comprise a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, and compounds, combinations or alloys of these substances.
  • a metal For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, and compounds, combinations or alloys of these substances.
  • the first electrically conductive layer may be formed by a layer stack of a
  • ITO indium tin oxide
  • electrically conductive layer one or more of
  • the first electrically conductive layer may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.
  • the first electrically conductive layer may be electrically conductive layer translucent or transparent.
  • the first electric conductive layer comprises or is formed of a metal
  • the first electrically conductive layer comprises or is formed of a metal
  • Layer has a conductive transparent oxide (TCO) or is formed therefrom, the first electrically conductive layer, for example, have a layer thickness in a range of about 50 nm to about 500 nm,
  • Polymers can be combined to form a network
  • the first electrically conductive layer for example, have a layer thickness in a range of about 1 nm to about 500 nm, for example from about 10 nm to about 280 nm, for example from about 28 nm to about 250 nm hr.
  • the first electrically conductive layer can be designed to form anodes, ie, holes injecting electrodes, or can be injected from cathodes, that is to say electrons
  • the first electrically conductive layer can be applied to the carrier body 12, for example, by means of sputtering, for example DC sputtering, physical vapor deposition (PVD) or the like.
  • sputtering for example DC sputtering, physical vapor deposition (PVD) or the like.
  • FIG. 5 shows a plan view of a composite component which comprises a plurality of optoelectronic components 10 during the
  • Manufacturing process shows, in particular in the state shown in FIG. 4 is shown in sectional view.
  • the contact recesses 42, 44 not yet formed
  • FIG. 6 shows the optoelectronic component 10 according to FIG. 4 in a further step during the method for
  • the functional layer structure 22 may comprise, for example, organically functional layers and, for example, the optically active region of the optoelectronic layer
  • Component 10 for example, an OLED represent.
  • the organically functional layers can be formed, for example, in one, two or more process steps.
  • the organic functional layers can be vapor-deposited in vacuo.
  • the organic functional layers can be, for example, semiconducting,
  • an optoelectronic component 10 for example, an OLED
  • FIG. 7 shows the optoelectronic component 10 in a further step of the method for producing the
  • Encapsulation layer 24 is arranged.
  • the adhesive layer 36 may, for example, over the entire surface
  • the covering body 38 can also be formed over the entire adhesive layer 36 and / or over the entire encapsulation layer 24 and / or over the entire component composite.
  • the Kontak recesses 42, 44 are formed in the Abdeckkorper 38 and the adhesive layer 36, so that the optoelectronic device 10, as shown in Fig. 2, is formed.
  • the contact recesses 42, 44 can be formed for example by means of laser drilling.
  • FIG. 8 shows the optoelectronic component 10 in an alternative step to a method for producing the optoelectronic component 10 shown in FIG. 7, in which the cover body 38 has a first recess 421 of the cover body 38 prior to application to the adhesive layer 36 a second recess 441 of the
  • Cover body 38 by means of which recess 421, 441 below the first contact recess 42 and the second contact recess 44 are formed.
  • the covering body 38 is placed on the adhesive layer 36 with the recesses 421, 441 of the covering body 38. Subsequently, the adhesive layer 36 and / or the encapsulation layer 24, which are exposed in the recesses 421, 441 of the cover body 38, can be removed, for example by means of
  • Cover body 38, the cover body 38 serve as a protective mask, for example as an etching stop mask.
  • Adhesive layer is removed in the region of the recesses 421, 441 of the cover body 38 is thereby the
  • Opto-electronic device 10 as shown in Fig. 2
  • FIG. 9 shows the optoelectronic component 10 in a further step of the method for producing the
  • Optoelectronic device 10 which can be performed alternatively to the steps shown in Fig. 7 and Fig. 8.
  • the adhesive layer 36 and the cover body 38 without the recesses 421, 441 formed and disposed over the encapsulation layer 24.
  • the first contact recess 42 and the second contact recess 44 are formed in the carrier body 12.
  • Carrier body 12 may be formed, for example, by laser drilling, mechanical drilling or wet chemical etching.
  • the contact recesses 42, 44 of the carrier body 12 extend as far as the contact electrodes 16, 18.
  • Fig. 10 shows an embodiment of a male member 50.
  • the male member 50 may in one of
  • Contact recesses 32, 34 are arranged and serves for electrically contacting the first and second electrodes 16, 18, in particular the first and second contact region 32, 34.
  • the male member 50 has four retaining arms 52, of which in Fig. 10, three and one are covered. Alternatively, the plug element 50 may also have only two, three or more than four retaining arms 52.
  • the holding arms 25 are connected to each other at their axial ends and have in the middle convexly outward
  • a radius around the holding arms 52 in the region of the maximum curvature can be slightly larger than the radius of the contact recesses 32, 34.
  • the plug element 50 can be provided with a
  • FIG. 11 shows an exemplary embodiment of a plug element 50 which has a central body 54 and three retaining rings 56.
  • the male member 50 may also have only one, two or more than three retaining rings 56
  • the plug element 50 is used according to the plug element 50 shown in FIG.
  • An outer diameter of the retaining rings 56 may for example be slightly larger than that of the corresponding contact recesses 32, 34.
  • the retaining rings 56 may be formed of a simple deformable material, such as rubber or silicone. In other words, the retaining rings 56 with a
  • Fig. 12 shows an embodiment of a plug member 50 which has been explained in the foregoing
  • Plug elements 50 in a de contact recesses 42, 44 can be arranged and which can serve to the
  • the plug element 50 has a serrated ring 58 at its axial end, which is in contact with the corresponding contact region 32, 34 when used as intended.
  • the serrated ring 58 may, for example serve to deform the material of the corresponding contact area 32, 34 and thereby to provide a larger contact area between the corresponding contact area 32, 34 and the plug element 50. This can contribute to a particularly good electrical coupling of the plug element 50 with the corresponding contact region 32, 34.
  • the in Fig. 12 have the retaining elements 56 or the retaining arms 52,
  • FIG. 13 shows an embodiment of a male member 50 that includes the central body 54 and a plurality of
  • the plug element 50 can
  • Plug elements 50 are arranged in one of the contact recesses 42, 44 and can serve to electrically contact the corresponding contact region 32, 34.
  • Barbs 60 serve that the male member 50 while easy in the corresponding contact recess 42, 44th
  • the male member 50 may include more or fewer barbs 60.
  • Plug element 50 may, for example, with the im
  • Previously discussed connector elements 50 are combined. For example, the in Fig. 13 shown
  • Plug element 50, the toothed ring 58, the retaining rings 56 and / or the retaining arms 52 have. Furthermore, all of the above can be explained
  • Plug elements 50 spring elements having a
  • Fig. 14 shows a perspective view of a
  • the sleeves 64 may in the
  • the sleeves 64 can along a direction 65 in the corresponding
  • the sleeves 64 may, for example, comprise an electrically conductive material. Furthermore, the sleeves 64 may comprise elements which have been explained in connection with the connector elements 50. For example, the sleeves 64 at their
  • the sleeves 64 can be arranged in the contact recesses 42, 44, that they the corresponding
  • the sleeves 64 can thus provide a simple and reliable electrical
  • the sleeves are preferably formed from electrically insulating material. The electrical contacting can then take place in that the connector elements 50 through the
  • FIG. 15 shows an exemplary embodiment of a
  • Optoelectronic component 10 in particular an organic Iichtemittierenden diode having a plurality of first contact recesses 42 and a plurality of second contact recesses 44.
  • Fig. 15 shows an embodiment of a plug body 66 on or in the more
  • Plug elements 50 are attached.
  • the plug elements 50 can be electrically contacted via the plug body 66 and a connection line 68.
  • the arrangement of the connector elements 50 on the plug body 66 corresponds to the arrangement of the contact recesses 42, 44 such that the
  • Plug members 50 by moving the plug body 66 along the direction 65 at the same time in the corresponding contact recesses 42, 44 can be inserted.
  • Contact recesses 42, 44 may be arranged so that the plug body 66 only in one way on the
  • optoelectronic component 10 can be plugged. As a result, a polarity reversal protection can be formed.
  • Previously explained plug element 50 may be designed accordingly.
  • Fig. 16 shows an exemplary embodiment of a
  • Embodiment of an organic light-emitting diode with the plug body 66, which in turn along the
  • Direction 65 can be placed on the cover body 38, so that the plug elements 50 attached to it in the
  • Contact recesses 42, 44 are insertable and the corresponding contact areas 32, 34 are electrically contacted.
  • the contact recesses 42, 44 are in this exemplary embodiment from polygonal, in particular rectangular. Accordingly, the connector elements 50 are formed so that they can be inserted into the contact recesses 42, 44.
  • the connector elements 50 are formed of thin sheets, which at their ends to the
  • Plug body 66 are attached and which are curved in their central portions round or angular convex outwardly toward the contact areas 32, 34.
  • Fig. 17 shows an embodiment of a plug element 50 in a sectional view.
  • the plug element 50 has four retaining arms 52, of which in FIG. 17 the two outer retaining arms 52 are shown in side view and the middle retaining arm 52 is shown in front view.
  • the two outer retaining arms 52 are shown in side view and the middle retaining arm 52 is shown in front view.
  • the middle retaining arm 52 is shown in front view.
  • Connector element 50 have only two, three or more than four retaining arms 52.
  • the holding arms 52 are over a
  • the base member 70 connected together.
  • the holding arms 52 extend in the direction away from the base element 70 and have latching elements 52 at their ends facing away from the base element 70.
  • the latching elements 52 are formed for example by portions of the support arms 52 which are bent outwards.
  • the base member 70 may be electrically coupled to an electrical conductor (not shown), for example by means of a solder joint.
  • the electrical conductor may for example be a cable
  • the plug element 50 in particular the base element 70 and the holding arms 52, can be made of an electrically conductive
  • FIG. 18 shows a bottom view of the plug element 50 according to FIG. 17, FIG. 17
  • Plug element 50 according to Figure 18 shows.
  • the base member 70 is formed in a cross shape. Alternatively, the
  • Base element 70 also roundish, for example circular, or polygonal, for example rectangular, for example square, be formed »
  • FIG. 19 shows an embodiment of a plug element 50 in a sectional view, which can be plug element 50
  • the plug element 50 has an eyelet 74 on its base element 70.
  • the eyelet 74 may help to easily and securely connect the electrical conductor to the male member 50.
  • FIG. 20 shows an embodiment of a plug element 50 in a sectional view.
  • the plug element 50 can
  • Plug element 50 has at its base element 70 a
  • the contact pin 76 can help to easily and safely connect the electrical conductor with the
  • Plug element 50 to connect.
  • FIG. 21 shows a sectional view of a detail of an exemplary embodiment of an optoelectronic component 10, which for example can largely correspond to one of the optoelectronic components 10 explained above.
  • Contact recess 44 of the optoelectronic component 10 has an undercut 78.
  • first contact recess 42 may have a corresponding undercut 78.
  • Contact recess 44 is widened in the region of the undercut 78 compared with its other axial extent.
  • the undercut 78 closes in the axial course of the
  • the Hi terschneidung 78 may be formed, for example, characterized in that in the cover 38, the second
  • Contact recess 44 has a first portion with a first radius and a second portion with a second radius and that the radius of the second portion, which is located closer to the substrate 12 than the first
  • Section is formed a step.
  • the undercut 78 is in the second section.
  • a plug element 50 is arranged, for example, the reference to FIG. 17
  • the plug-in element 50 is arranged in the second contact recess 44 such that its latching elements 72 are arranged in the undercut 78 and that it is in direct physical contact with the second contact region 34.
  • the second contact region 34 is electrically contactable via the plug element 50 and in particular via the base element 70 and the holding arms 52 of the plug element 50.
  • FIG. 22 shows an exemplary embodiment of a plug body 66 with a plug element 50.
  • the plug element 50 can be largely one of the above
  • the plug element 50 has a contact body 80.
  • Contact body 80 extends further away from connector body 66 than support arms 52.
  • Contact body 80 includes, for example, an electrically conductive material, such as metal.
  • the holding arms 52 comprise an electrically conductive and / or an electrically insulating material, wherein the electrical coupling via the
  • Contact body 80 can be made. In the plug body 66 contact portions 82 are arranged, which are electrically connected to the
  • Contact bodies 80 are coupled.
  • the contact portions 82 may be formed so that another does not illustrated plug or electrical conductor in it
  • FIG. 23 shows a side view of the plug body 66 with the plug element 50 according to FIG. 22.
  • the contact body 80 is designed as a spring element.
  • the contact portions 82 are sleeve-shaped.
  • FIG. 24 shows a bottom view of the plug body 66 with the plug element 50 according to FIG. 22.
  • the contact body 80 is electrically coupled to the contact sections 82 via a web 84 which is arranged in the plug body 66.
  • Fig. 25 shows a sectional view of a detail of a
  • an optoelectronic component 10 which may for example largely correspond to one of the optoelectronic components 10 explained above.
  • the plug body 66 shown in Figure 22 is arranged on the cover body 38, that the holding arms 52 are arranged in the second contact usEnglishung 44, the
  • Locking elements 72 are arranged in the undercut 28 and the contact body 80 is in direct physical contact with the second contact region 34. Preferably, in this state, a force acts on the contact body 80 from the second contact region 44, so that it deforms,
  • Fig. 26 shows a first step of a method for.
  • Plug element 50 is to be inserted into the second contact recess 44 also shown in Figure 21.
  • Fig. 27 shows a second step of the method of Figure 26, in which the male member 50 is partially inserted into the second Kontak recess 44 such that the
  • Retaining arms 52 are bent inwards. The state when the plug member 50 is fully inserted is shown in FIG.
  • Fig. 28 shows a first step of an alternative
  • FIG. 29 shows a second step of the method of Figure 28, in which the male member 50 in the second
  • the second contact region 34 may, for example, be of annular design and / or surround a central region 86 in that the encapsulation layer 24 and / or the adhesive layer 36 are not removed.
  • FIG. 30 shows a flow chart of an exemplary embodiment of a method for producing an optoelectronic component, for example one of the optoelectronic components 10 explained above, in particular the organic light emitting diode.
  • the carrier body 12 is provided.
  • Encapsulation layer 2 in a step S6, the cover body 38 is arranged, for example by means of the adhesive layer 36th
  • the contact recesses 42, 44 are formed in the cover body 38 and optionally the adhesive layer 36 or in the carrier body 12, respectively
  • the contact areas 32, 34 can be exposed.
  • the contact areas 32, 34 can be exposed.
  • Contact areas 32, 34 are freed from the encapsulation layer 24 and / or the adhesive layer 36. This can be done, for example, in an etching process in which the cover body 38 can serve as an etch stop.
  • 31 shows a flow chart of an exemplary embodiment of a method for producing an optoelectronic component 10, for example one of the optoelectronic components 10 explained above, in particular the organic light emitting diode.
  • a step S12 the carrier body 12 is provided.
  • Electrode layer 14 the functional layer structure 22, the second electrode portion 23 and the
  • the contact recesses 42, 44 are formed in the cover body 38, for example by means of
  • Encapsulation layer 24 for example by means of
  • Adhesive layer 36 arranged, in such a way that the
  • the contact areas 32, 34 can be exposed.
  • the contact areas 32, 34 can be exposed.
  • Encapsulation layer 24 and / or adhesive layer 36 over the respective contact areas 32, 34 are removed. This can be done, for example, in an etching process in which the cover body 38 can serve as an etch stop.
  • FIG. 32 shows a schematic cross-sectional view of a layer structure of an exemplary embodiment of FIG.
  • Optoelectronic component 10 in particular an organic light-emitting diode, according to various embodiments, wherein the focus or the focus is placed on the explanation of the individual layers, their training and their materials.
  • the optoelectronic components 10 explained above can be any optoelectronic component 10 explained above.
  • the optoelectronic component 10 can, for example, be an electromagnetic radiation emitting component 100, for example a light-emitting component,
  • the electromagnetic radiation emitting device 100 may include a carrier 102.
  • the carrier 102 may be any suitable carrier 102.
  • the support body 12 can be used as a support member for
  • the electromagnetic radiation emitting device 100 may be configured as a so-called top and bottom emitter.
  • a top and / or bottom emitter can also be referred to as an optically transparent component, for example a transparent organic light-emitting diode.
  • the carrier 102 may be in different
  • the barrier layer 104 may, for example, also be regarded as a partial layer of the carrier 102.
  • the barrier layer 104 may include or consist of one or more of the following: alumina,
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys
  • barrier layer 104 may be in
  • Atomiage to about 5000 nm, for example one
  • an electrically active region 106 of the light-emitting device 100 may be arranged on or above the barrier layer 104.
  • the electrically active region 106 can be understood as the region of the electromagnetic radiation emitting device 100, in which an electric current for the operation of the electromagnetic radiation
  • the electrically active region 106, a lower electrode 110, an upper electrode 114 and an organic functional layer structure 112 have, as will be explained in more detail below.
  • the lower electrode 110 may be, for example, the first
  • Electrode portion 20 and / or the upper electrode 114 may for example, the second electrode section 23
  • the bottom electrode 110 (eg, as part of the first
  • Electrode layer 14 may be applied. Furthermore, the electrically active region 106 of the
  • electromagnetic radiation emitting device 100 have an organic functional layer structure 112 which is applied or formed on or above the lower electrode 110.
  • the organic functional layer structure 112 may be the functional one
  • Layer structure 22 represent.
  • the organic functional layer structure 112 may comprise one or more emitter layers 118, for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers 116 (also referred to as hole transport layer (s) 120).
  • emitter layers 118 for example with fluorescent and / or phosphorescent emitters
  • hole line layers 116 also referred to as hole transport layer (s) 120.
  • one or more electron conduction layers 116 may be provided.
  • electromagnetic radiation emitting device 100 according to various Ausus operationsbeiar for the
  • Emitter layer (s) 118 may include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g., 2- or 2-, 5-substituted poly-p-phenylenevinylene) as well as
  • Metal complexes for example iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescent Ir (ppy) 3 (tris ⁇ 2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) 3 * 2 (PFg)
  • blue phosphorescent FIrPic bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III
  • green phosphorescent Ir ppy
  • tris ⁇ 2-phenylpyridine tris ⁇ 2-phenylpyridine
  • Ru red phosphorescent Ru
  • Non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).
  • the emitter materials may be suitably embedded in a matrix material.
  • Emitter materials are also provided in other embodiments.
  • the emitter materials of the emitter layer (s) 118 of the electromagnetic radiation emitting device 100 may be selected such that the
  • the electromagnetic radiation emitting device 100 emits white light.
  • the emitter layer (s) 118 may include a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)
  • the emitter layer (s) 118 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 118 or blue
  • phosphorescent emitter layer 118 By mixing the different colors, the emission of light can result in a white color impression.
  • a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits a secondary radiation of different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary radiation, a white Color impression results.
  • the organic functional layer structure 112 may generally comprise one or more electroluminescent layers.
  • the one or more electroluminescent layers may generally comprise one or more electroluminescent layers.
  • Layers may or may not include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules, or a combination of these substances.
  • the organic functional layer structure 112 may include one or more
  • Hole transport layer 120 is or are, so that, for example, in the case of an OLED an effective
  • the organic functional layer structure 112 may include one or more functional layers, which may be referred to as a
  • Electron transport layer 116 is executed or are, so that, for example, in an OLED an effective
  • Electron injection into an electroluminescent layer or an electroluminescent region is made possible.
  • As a substance for the hole transport layer 120 can be any substance for the hole transport layer 120 .
  • the one or more electroluminescent layers may or may not be referred to as
  • Hole transport layer 120 may be applied to or over the lower electrode 110, for example, deposited, and the Emitter layer 118 may be on or above the
  • Hole transport layer 120 may be applied, for example, be deposited.
  • the electrolyte transport layer 116 may be deposited on or over the emitter layer 118, for example, deposited.
  • the organic functional layer structure 112 (that is, for example, the sum of the thicknesses of hole transport layer (s) 120 and
  • the organic functional layer structure 112 may be a stack of several directly stacked
  • each OLED may have a layer thickness between 25 nm and 1.5 pm, for example, a layer thickness between 50 nm and 800 nm, for example, a layer thickness between 150 nm and 300 nm.
  • the organic functional layer structure 112 may have organic light-emitting diodes (OLEDs), each OLED, for example, may have a layer thickness between 25 nm and 1.5 pm, for example, a layer thickness between 50 nm and 800 nm, for example, a layer thickness between 150 nm and 300 nm.
  • the organic functional layer structure 112 may have a layer thickness between 25 nm and 1.5 pm, for example, a layer thickness between 50 nm and 800 nm, for example, a layer thickness between 150 nm and 300 nm.
  • organic functional layer structure 112 may have a layer thickness of at most about 3 pm.
  • the electromagnetic radiation emitting device 100 may optionally further generally organic
  • Functional layers for example disposed on or over the one or more emitter layers 118 or on or above the electron transport layer (s) 116
  • organic functional layer structure 112 which serve to further improve the functionality and thus the efficiency of the electromagnetic radiation emitting device 100.
  • Layer structures 112 may be the upper electrode 114
  • the top electrode 114 may include or be formed from the same materials as the bottom electrode 110, with metals being particularly preferred in various embodiments
  • the lower electrode 110 and the upper electrode 114 are both translucent or transparent.
  • the light-emitting device 100 shown in Fig. 1 may be formed as a top and bottom emitter (in other words, a transparent light-emitting device 100 ⁇ .)
  • the top electrode 114 may be an anode, that is, holes
  • injecting electrode or as a cathode, that is, as an electron-injecting electrode.
  • On or above the second electrode 114 and thus on or above the electrically active region 106 may optionally be an encapsulation 108, for example in the form of a
  • Barrier thin film / thin film encapsulation 108 are formed or be.
  • the encapsulation 108 may, for example, correspond to the encapsulation splitter 24. Under one
  • carrier thin film” 108 or an "insulator region thin film” 108 may, for example, be understood to mean a layer or a layer structure which is suitable for facing an insulator region
  • the barrier thin film 108 is formed to be damaging to OLED
  • Substances such as water, oxygen or solvents can not or at most be penetrated to very small proportions.
  • the barrier thin-film layer 108 may be formed as a single layer (in other words, as Single layer) may be formed. According to an alternative embodiment, the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another. In other words, according to one embodiment, the
  • Barrier thin film 108 as a stack of layers (stack)
  • the barrier film 108 or one or more sublayers of the barrier film 108 may be formed by, for example, a suitable deposition process, e.g. by means of a
  • Atomic Layer Deposition e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless
  • PECVD plasma enhanced chemical vapor deposition
  • plasmaless vapor deposition plasmaless vapor deposition
  • PLCVD Chemical Vapor Deposition
  • ALD atomic layer deposition process
  • Atomic layer deposition process are formed.
  • a layer sequence comprising only ALD layers may also be referred to as "nanolaminate.”
  • one or more barrier layers may have one or more sublayers
  • Atomic layer deposition processes are deposited
  • the barrier film 108 may, in one embodiment, have a film thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a film thickness of about 10 nm to about 100 nm according to a
  • Embodiment for example, about 40 nm according to an embodiment.
  • all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another
  • Barrier thin layer 108 have different layer thicknesses. In other words, at least one of
  • Partial layers have a different layer thickness than one or more other of the sub-layers
  • Barrier thin layer 108 or the individual sublayers of barrier thin film 108 may be formed as a translucent or transparent layer according to one embodiment.
  • the barrier film 108 (or the individual sub-layers of the barrier film 108) may be made of a translucent or transparent substance (or mixture that is translucent or transparent).
  • the barrier thin-film layer 108 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the
  • Barrier thin layer 108 include or may be formed from any of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys
  • Layered stack having a plurality of sublayers one or more of the sublayers of the barrier film 108 comprise one or more high refractive indexes, in other words one or more high content materials Refractive index, for example with a refractive index of at least 2.
  • the cover 126 for example made of glass, for example by means of a frit connection
  • the cover 126 may, for example, extend over all optoelectronic components 10 of the component network.
  • the cover 126 may, for example, the
  • Protective varnish 124 may be provided, by means of which, for example, the cover 126 (for example, a glass cover) attached to the barrier thin layer 108, for example, is glued.
  • the optically translucent layer of adhesive and / or protective varnish 124 may have a layer thickness of greater than 1 ⁇ ,
  • a layer thickness of several pm for example, a layer thickness of several pm.
  • the adhesive may include or be a lamination adhesive.
  • the adhesive and / or the resist 124 may correspond to the adhesive layer 36.
  • Adhesive layer can be embedded in various embodiments, still scattering particles that contribute to a further improvement of the color angle distortion and the
  • Exemplary embodiments may be provided as light-scattering particles, for example, dielectric scattering particles, such as, for example, metal oxides such as silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium-innium oxide (ITO) or indium-zinc oxide (IZO), gallium oxide ( Ga20a) Alumina, or titania.
  • dielectric scattering particles such as, for example, metal oxides such as silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium-innium oxide (ITO) or indium-zinc oxide (IZO), gallium oxide ( Ga20a) Alumina, or titania.
  • Other particles may also be suitable provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres.
  • metallic nanoparticles, metals such as gold, silver, iron nanop
  • SiN for example, with a layer thickness in a range of about 300 nm to about 1.5 pm,
  • a layer thickness in a range of about 500 nm to about 1 ⁇ to protect electrically unstable materials, for example during a
  • the adhesive may be arranged to have a refractive index of its own which is less than the refractive index of the refractive index
  • Such an adhesive may be, for example, a low-refractive adhesive such as a
  • cover 126 for example made of glass
  • cover 126 by means of, for example
  • Plasma spraying are applied to the barrier film 108.
  • the cover 126 and / or the adhesive 124 may include a
  • Refractive index (for example, at a wavelength of 633 nm) of 1.55. Further, in various embodiments, examples may be given
  • the optoelectronic component 10 more or less
  • steps S4 and S14 may comprise a plurality of sub-steps in which, for example, respective sub-layers, such as, for example, electron-transport layers, electron-injection layers and / or organically functional layers, are formed.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)

Abstract

Dans différents exemples de réalisation, l'invention concerne une diode électroluminescente organique (10). La diode électroluminescente organique (10) comporte un élément support (12), une structure de couches optoélectroniques, un élément de recouvrement (38) et au moins un creux de contact (42, 44). La structure de couches optoélectroniques est formée sur l'élément support (12) et elle comporte au moins une zone de contact (32, 34) servant à connecter électriquement la structure de couches optoélectroniques. L'élément de recouvrement (38) est disposé sur la structure de couches optoélectroniques. Au moins un creux de contact (42, 44) s'étend à travers l'élément support (12) et/ou l'élément de recouvrement (38). Une partie au moins de la zone de contact (32, 34) est exposée dans le creux de contact (42, 44).
PCT/EP2014/063241 2013-06-25 2014-06-24 Diode électroluminescente organique et procédé de fabrication d'une diode électroluminescente organique WO2014206965A1 (fr)

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DE102013106609.7A DE102013106609A1 (de) 2013-06-25 2013-06-25 Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102013106609.7 2013-06-25

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WO2014206965A1 true WO2014206965A1 (fr) 2014-12-31

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FR3036853A1 (fr) * 2015-05-26 2016-12-02 Astron Fiamm Safety Procede de realisation d'une diode electroluminescente organique
DE102015214228A1 (de) * 2015-07-28 2017-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Bauelements und ein Bauelement
DE102016012644A1 (de) * 2016-10-24 2018-04-26 Azur Space Solar Power Gmbh Nutzen von Solarzelleneinheiten und Herstellungsverfahren
FR3098997B1 (fr) * 2019-07-18 2021-11-26 Tecmoled Dispositif d’émission de lumière

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