WO2015124729A1 - Composant optoélectronique et procédé de production d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de production d'un composant optoélectronique Download PDF

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Publication number
WO2015124729A1
WO2015124729A1 PCT/EP2015/053626 EP2015053626W WO2015124729A1 WO 2015124729 A1 WO2015124729 A1 WO 2015124729A1 EP 2015053626 W EP2015053626 W EP 2015053626W WO 2015124729 A1 WO2015124729 A1 WO 2015124729A1
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WO
WIPO (PCT)
Prior art keywords
substrate
distribution structure
power distribution
electrode
electrically
Prior art date
Application number
PCT/EP2015/053626
Other languages
German (de)
English (en)
Inventor
Arndt Jaeger
Simon SCHICKTANZ
Egbert HÖFLING
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2015124729A1 publication Critical patent/WO2015124729A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • OLEDs Light-emitting diodes
  • General lighting for example as a surface light source.
  • An OLED can have an anode and a cathode with one
  • the organic functional layer system may include one or more emitter layers in which e1e romagnetic radiation is generated, one or more charge carrier pair generation layer structure each of two or more carrier pair generation layers
  • Charge carrier pair generation and one or more
  • Electron block layers also referred to as
  • Hole transport layer and one or more hole block layers, also referred to as electron transport layer (s) (ETL), for directing the flow of current.
  • s electron transport layer
  • busbars thin metallic bus bars
  • Contact pins are bridged or passed through the insulated cathode on the OLED back, for example, an encapsulating glass (Capglas).
  • the encapsulation glass is equipped with an additional electrode and through the
  • Optoelectronic component comprising: an optically active region having an organic functional
  • Layer structure is formed for converting an electric current into an electromagnetic radiation and / or for converting an electromagnetic radiation into an electric current; wherein a substrate at least in the beam path of the electromagnetic radiation is arranged; and wherein the substrate is at least in
  • Current distribution structure is formed in the substrate and extends along the common interface.
  • the substrate may be formed as a lamina at least translucent with respect to the electromagnetic radiation, with one embedded in the substrate
  • the substrate can be formed, for example, from two or more surface-bonded substrate structures, wherein these
  • the interface can have at least one electrically conductive line which extends directly at the common interface.
  • This electrically conductive line can, for example, in the surface of a substrate structure
  • the substrate having an electrically conductive line at the surface may, for example, have a substantially smooth surface such that the at least one electrically conductive line on the surface of the substrate structure is free of elevations which, when the optically active region is formed on the substrate, act as a particle trap or " shadow forming "
  • a current distribution structure may also comprise at least one electrically conductive line which is at a distance from the interface, for example parallel to the interface, along the interface in the substrate. This at least one
  • electrically conductive line can by means of electrical
  • the power distribution structure may extend along the
  • a one-dimensional extent may be a straight line embedded in the substrate structure
  • the lead is at least partially covered and / or surrounded by a substrate structure of the substrate at the common interface.
  • a two-dimensional extent can, for example, be embodied as a line embedded in the substrate structure in the form of a pattern, for example a spiral or a meander; or be formed in For a grid or network.
  • the embedded line is at least partially at the common interface of a Subst at Modell of
  • Substrate covered and / or surrounded.
  • a three-dimensional extent may be formed as a conduit or array of conduits that is spaced from the interface and electrically conductive via contacts
  • Interface is electrically connected / are.
  • Line or arrangement of lines is at least
  • the current distribution structure may be embedded in the substrate, for example directly fixed, for example atomically connected to the substrate, or indirectly, for example at least partially glued, soldered or welded to the substrate by means of a bonding agent.
  • the power distribution structure may be at least partially disposed in the substrate, for example by laying a line in a cable channel in the substrate.
  • the optically active region may further comprise a first electrode and a second electrode, wherein the organic functional layer structure is formed between the first electrode and the second electrode, and wherein the first electrode is on or above the substrate
  • the first electrode may be formed on the substrate, for example forming the common interface with the substrate.
  • the second electrode may be formed above or next to the first electrode.
  • the power distribution structure may be formed such that the power distribution structure has a higher electrical transverse conductivity with respect to the planar
  • the power distribution structure may include one or more lines extending along the interface of the substrate with the optically active region.
  • a conduit may have one or more edge lengths with respect to the cross-sectional area of the conduit in a range from about 0.1 ⁇ to about 100 ⁇
  • the width of the line may be dependent on the thickness of the line in each case with respect to the surface normal of Substrate parallel to the surface normal of the optically active region; and the material composition of the line (s), for example, their electrical conductivity.
  • the substrate may comprise or be formed from a glass, for example a glass
  • Natronsilikatglas for example in the form of a flat glass.
  • Substrate structure may be formed from a glass solder paste, for example, the glass solder paste may have a glass solder powder.
  • the glass solder powder may, for example, comprise or be formed from one of the following substances: PbO-containing systems: PbO-B 2 O 3 , PbO-SiO 2 , PbO-B 2 O 3 -SiO 2 , PbO-B 2 O 3 -ZnO 2 , PbO-B 2 0 3 -Al 2 0 3 , wherein the PbO-containing glass solder can also have Bi 2 0 3 ; Bi 2 0 3 -containing systems: Bi 2 0 3 -B 2 0 3 , Bi 2 0 3 - B 2 0 3 -Si0 2 , Bi 2 0 3 -B 2 0 3 -ZnO, Bi 2 0 3 -B 2 0 3 -ZnO-Si0 2 .
  • the glass solder paste can evaporate liquid and /
  • additives Have organic ingredients. These ingredients can be different additives, so-called additives,
  • the substrate may include or be formed from plastic, for example in the form of a film or a molding compound, for example in the form of a
  • the power distribution structure may comprise at least one electrical line and electrically conductive vias, wherein the vias are electrically conductively connected to the at least one electrical line, such that the at least one electrical line by means of the vias with the optically active Is electrically conductively coupled region, for example, with the first electrode or the second electrode.
  • the current distribution structure can be, for example, nanowires, for example with silver, copper, gold, aluminum and / or other metals, carbon nanotubes, for example as single-wall or multi-wall carbon nanotubes; and / or an electrically conductive and / or electrically conductive
  • indium tin oxide indium zinc oxide, zinc oxide, nickel oxide or the like.
  • the current distribution structure may, for example, be designed to be at least translucent, for example transparent, and / or not or barely visible, for example by the structural widths of at least part of the structures of the current distribution structure being smaller than that
  • Current distribution structure at least partially be formed in an optically inactive region of the optoelectronic component.
  • the current distribution structure may be formed on a foil, wherein the foil is arranged between the first substrate structure and the second substrate structure, for example as a laminate.
  • the power distribution structure may be at least partially formed in an air duct, for example arranged or embedded.
  • the conductor structure may be formed in a channel with a part of the channel being free of
  • the power distribution structure may be at least partially surrounded by a molding compound.
  • molding compound may be electrically nonconductive
  • the current distribution structure may be embedded in the molding compound, for example at least partially surrounded and / or fixed, for example with respect to slippage of a line.
  • the substrate may be a first
  • Substrate structure be connected, for example by means of the molding compound and / or the shape of the first substrate structure and the second substrate structure.
  • the at least one electrical line can be arranged or formed flat in the substrate, for example with parallel paths, for example in the form of a meander or a spiral. As a result, a current distribution can be made possible by means of a single electrical line over the entire surface of an electrode.
  • Power distribution structure several electrically conductive
  • the grid or network structure can be formed, for example, flat in the substrate.
  • the Stromver eilungs minimalistic to realize a first power distribution structure and a second
  • Current distribution structure may be formed in different layers of the substrate.
  • Current distribution structure may be formed in the same layer, for example, side by side or in each other.
  • the power distribution structure may be at least partially exposed such that the
  • Current distribution structure is electrically contacted is, for example, at the edge of the optoelectronic component.
  • the current distribution structure may comprise at least one electrically conductive line which at least partially surrounds the common interface
  • the at least one line forms a common interface with the optically active region.
  • the at least one line can be arranged at a distance from the common interface.
  • the power distribution structure may further comprise electrically conductive vias in the first
  • the power distribution structure may further comprise electrically conductive vias in the first
  • the optoelectronic component may further comprise electrically conductive vias through the first electrode and the organic functional layer structure, wherein the vias are formed such that the second electrode is electrically conductively connected to the at least one line of the current distribution structure.
  • the optically active region for example, the first electrode, with respect to the
  • the optoelectronic component can furthermore have an encapsulation structure on or above the optically active region, the encapsulation structure being hermetically sealed with respect to a diffusion of water
  • the encapsulation structure and the substrate may be formed such that the
  • Encapsulation structure forms a hermetically sealed encapsulation with the substrate, wherein the optically active region hermetically sealed by the electrical
  • Current distribution structure is electrically conductive contactable.
  • the substrate may have at least one electrical connection, wherein the electrical
  • Connection is electrically conductively connected to the power distribution structure, and wherein the electrical connection is designed to be exposed and electrically contacted.
  • the substrate may be formed in such a way, wherein the substrate substantially only optically inactive
  • the optoelectronic component may be formed as an organic optoelectronic device, for example as an organic photodetector, an organic solar cell and / or an organic light emitting diode.
  • a method for producing an optoelectronic component for example as an organic photodetector, an organic solar cell and / or an organic light emitting diode.
  • the method comprising: providing a substrate, wherein the substrate is a
  • an optically active region having an organic functional layer structure on or over the substrate, wherein the organic functional layer structure is for converting the electric current into electromagnetic radiation and / or to an electromagnetic radiation
  • the optically active region is formed on or above the substrate such that the current distribution structure is arranged in the beam path of the electromagnetic radiation, the optically active region and the substrate have a common interface, wherein the current distribution structure extends in the substrate along the common interface;
  • Current distribution structure is electrically connected to the optically active region.
  • optoelectronic component and the optoelectronic component have features of the method for producing an optoelectronic component such and
  • the method may include arranging the substrate on the optically active region, for example as an alternative or in addition to forming the optically active region on the substrate.
  • the method may further comprise forming the substrate, wherein the forming comprises at least one lamination of a substrate structure with a foil having a current distribution structure with at least one electrically conductive line.
  • the method may further include forming the substrate on iron, wherein forming at least one depositing or depositing an electrically conductive material on a substrate structure and / or on the at least one line of the
  • the formation of the substrate may include arranging at least one line of the
  • the formation of the substrate can form electrically conductive Vias in the at least one substrate structure
  • the electrically conductive vias are formed electrically conductively connected electrically conductively connected to the at least one electrical line.
  • the formation of the through contacts may include opening the substrate structure on or above the electrically conductive line, for example by means of a laser.
  • the formation of the vias can len at least a partial Fül
  • Overfill the openings with an electrically conductive paste for example by means of a screen printing or pad printing process.
  • the formation of the vias may be a deposition of an electrically conductive
  • the formation of the substrate may be a structured formation of a
  • FIG. 1 shows a schematic cross-sectional view of an optoelectronic component according to FIG. 1
  • Figure 2 is a schematic representation of a
  • Figure 3 is a schematic representations of a
  • FIGS. 4A-G are schematic representations of a substrate of an optoelectronic component according to various embodiments in a method for producing the
  • FIGS. 5A, B are schematic representations of optoelectronic
  • optoelectronic components are described, wherein an optoelectronic
  • the optically active region can emit electromagnetic radiation by means of an applied voltage to the optically active region.
  • the electromagnetic radiation may comprise a wavelength range on iron, X-radiation, UV radiation (A-C),
  • the substrate may be at least one of these
  • electromagnetic radiation be translucent or transparent.
  • emitting electromagnetic radiation can emit
  • providing electromagnetic radiation may be understood as emitting electromagnetic radiation by means of an electric current through an optically active structure.
  • the optically active region can be, for example, a
  • electromagnetic radiation emitting semiconductor structure and / or as an electromagnetic radiation emitting diode, as an organic electromagnetic radiation emitting diode, as a electromagnetic radiation emitting transistor or as an organic electromagnetic radiation emitting transistor
  • the emissive component can be called
  • LED light emitting diode
  • OLED organic light emitting diode
  • OFET organic field effect transistor
  • the organic field effect transistor may be a so-called “all-OFET" in which all layers are organic
  • Radiation emitting device can be in different
  • Embodiments be part of an integrated circuit.
  • a plurality of electromagnetic radiation emitting components may be provided, for example housed in a common housing.
  • Optoelectronic component can be an organic
  • the organic functional layer structure may include or may be formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a supplied electrical current, for example electroluminescent.
  • the optoelectronic component can be used as an organic light-emitting diode, an organic photodetector or a
  • An organic light emitting diode may be formed as a top emitter or a bottom emitter. In a bottom emitter, light is emitted from the electrically active region through the substrate, which is formed as a carrier. at A top emitter emits light from the top of the electrically active region through the substrate, which is formed as a cover.
  • a top emitter and / or bottom emitter may also be optically transparent or optically translucent, for example, any of the following can be described
  • Layers or structures may be transparent or translucent.
  • the substrate is a self-supporting body or coating
  • a substrate may be on the optically active
  • the optically active region may be formed on or above the substrate.
  • a planar optoelectronic component which has two flat, optically active sides, can be used in the
  • Connection direction of the optically active pages for example, be transparent or translucent, for example, as a transparent or translucent organic
  • a planar optoelectronic component can also be referred to as a planar optoelectronic component.
  • the optically active region can also be a flat, optically active side and a flat, optically inactive side on iron, for example an organic light-emitting diode which is set up as a so-called top emitter or bottom emitter.
  • the optically inactive side may be in
  • the beam path of the optoelectronic component can be directed, for example, on one side.
  • the first electrode, the second electrode and the organic functional layer structure may in each case be of large area. This allows the optoelectronic
  • Component have a continuous luminous surface which is not structured into functional subregions
  • a segmented into functional areas luminous area or a luminous area the one of
  • pixels are formed. This can be a large-scale radiation of electromagnetic
  • “Large area” can mean that the optically active side of a surface, such as a
  • the optoelectronic component only a single square millimeters, for example, greater than or equal to one square centimeter, for example, greater than or equal to one square decimeter.
  • the optoelectronic component only a single square millimeters, for example, greater than or equal to one square centimeter, for example, greater than or equal to one square decimeter.
  • the optoelectronic component only a single square millimeters, for example, greater than or equal to one square centimeter, for example, greater than or equal to one square decimeter.
  • translucent or “translucent layer” can be understood in various embodiments that a layer or structure is transparent to light, for example, that of the light-emitting
  • Component generated light for example, one or more wavelength ranges, for example, for light in one
  • Wavelength range of the visible light for example, at least in a partial region of the wavelength range of 380 nm to 780 nm.
  • the term "translucent layer” in different exemplary embodiments is to be understood to mean that substantially all of them are combined into one
  • Quantity of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered in this case
  • the term "transparent” or “transparent layer” can be understood in various embodiments that a layer is transparent to light
  • Wavelength range from 380 nm to 780 nm), in which a structure (for example, a layer) coupled light without scattering or light conversion is also coupled out of the structure (for example, layer).
  • a hermetically water and / or oxygen dense layer or structure may be considered as substantially related to a diffusion of water and / or oxygen through that layer or structure
  • a hermetically sealed layer or structure can be any material that can be used to form A hermetically sealed layer or structure.
  • Oxygen of less than about 10 g / (m d), a hermetically sealed cover and / or a hermetically sealed support may, for example, have a diffusion rate
  • a hermetically sealed substance or a hermetically sealed one may be used
  • the optically active region and the substrate in the region of the common interface on a physical, atomic contact.
  • the optically active region and the substrate divide, in the Area of the common interface vividly one
  • Optoelectronic device 100 has an active region 106 on a substrate 102, for example illustrated in FIG.
  • the optoelectronic device 100 may be configured as an organic optoelectronic device
  • Device 100 may be formed, for example as an organic photodetector 100, an organic solar cell 100 and / or an organic light-emitting diode 100.
  • the active region 106 is an electrically active region 106 and / or an optically active region 106.
  • the active region 106 is, for example, the region of the optoelectronic component 100 in which electrical current flows for operation of the optoelectronic component 100 and / or in the electromagnetic radiation is generated and / or absorbed,
  • the electrically active region 106 may include a first electrode 110, an organic functional layer structure 112, and a second electrode 114.
  • the organic functional layer structure 112 is electrically formed between the first electrode 110 and the second electrode 114.
  • Functional layer structure 112 is for converting an electric current into an electromagnetic one
  • the substrate 102 may be formed or arranged such that the
  • the substrate 102 has a current distribution structure 10.
  • the optically active region for example the first electrode 110 and / or the second electrode 114, is connected to the electrical
  • Power distribution structure 104 electrically coupled.
  • a substrate 102 In various embodiments, a substrate 102
  • the substrate 102 has at least in the beam path of the electromagnetic radiation
  • the optically active region 106 and the substrate 102 have a common interface, wherein the
  • Current distribution structure 104 is formed in the substrate 102 and extends along the common interface.
  • the substrate 102 may be such
  • the substrate 102 may have substantially only optically active region. In other words, the substrate 102 may be substantially free of optically inactive regions.
  • the substrate 102 may include or be formed in a mechanically rigid region and / or a mechanically flexible region, for example as a foil.
  • the substrate 102 may be used as a waveguide for those emitted and / or absorbed by the active region
  • electromagnetic radiation for example, be transparent or translucent in terms of
  • emitted or absorbed electromagnetic radiation of the optoelectronic component 100 for example with a transmittance, in a range of about 50% to 100%, for example in a range of about 60% to 100%, for example in a range of about 70% to 100%, for example in a range of about 80% to 100% For example, in a range of about 90% to 100%.
  • the substrate 102 may include one or more substrate structures. 108 -n; a
  • the substrate 102 may be a first
  • the substrate 102 has only one substrate structure 108 and the current distribution structure 104, wherein the silicon distribution structure 104 has at least one electrical line.
  • the power distribution structure 10 may further comprise vias 116, which are electrically connected to the electrical line, in the event that the at least one electrically conductive
  • Line is not exposed at the surface or interface to the optically active region.
  • the current distribution structure 104 is arranged between the first substrate structure 108-1 and the second substrate structure 108-2, for example, embedded in the first substrate structure 108-1 and / or the second substrate structure 108-2.
  • the optoelectronic component 100 for example the substrate 102, may be formed such that the magnetic distribution structure 104 is electrically connected to at least one of the substrate structures 108-1 / 2 with the first electrode 110 or the second electrode 114 connected or coupled, see also, for example
  • a substrate structure 108-n may include or be formed from glass, quartz, and / or a semiconductor material.
  • the substrate may be a plastic film or a
  • Laminate with one or more plastic films Laminate with one or more plastic films
  • the plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Furthermore, the plastic
  • Polyvinyl chloride PVC
  • PS polystyrene
  • PC polycarbonate
  • PET polyethylene terephthalate
  • PES Polyethersulfone
  • PEN polyethylene naphthalate
  • At least one substrate structure 108-n may comprise or be formed from a glass
  • At least one substrate structure 108-n may comprise or be formed from a plastic, for example in the form of a film or a molding compound.
  • a substrate structure 108-n may be in at least one
  • Wavelength range be opaque, translucent or even transparent.
  • a substrate structure 108-n may be part of a
  • the power distribution structure 104 may include at least one
  • the current distribution structure 104 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel and / or a semiconducting material, for example a metal oxide, for example zinc oxide, nickel oxide.
  • the current distribution structure 104 should be formed such that it has a higher conductivity or Stromvertei tion than the layer of the optically active region 106, for example electrode, with which it is electrically coupled, for example, with respect to the planar extent of the electrically coupled electrode.
  • Power distribution structure 104 two or more
  • the power distribution structure 104 may include a first power distribution structure 104-1 and a second power distribution structure 104-1
  • Power distribution structure 104-2 wherein the first power distribution structure 104-1 is electrically isolated from the second power distribution structure 104-2; and wherein the first power distribution structure 104-1 is electrically coupled to the first electrode 110 and the second power distribution structure 104-2 is electrically coupled to the second electrode 114.
  • Stromvertei lungs Quilt 104-1 and the second Power distribution structure 104-2 may be formed in different layers of the substrate. The different ones
  • Layers may for example be arranged side by side, one above the other or offset from each other.
  • Power distribution structure 104-2 be formed in the same layer, for example, as a side by side
  • the power distribution structure 104 may be at least partially exposed such that the
  • Current distribution structure 104 is electrically contacted, for example, at the edge of the optoelectronic component 100th
  • the power distribution structure 104 may be formed on a foil.
  • the foil can be formed on a foil.
  • first substrate structure 108-1 for example, be arranged between the first substrate structure 108-1 and the second substrate structure 108-2,
  • the power distribution structure 104 may be formed in an air channel, for example in a channel that is partially free of power distribution structure 10th
  • the power distribution structure 104 may be at least partially surrounded by a molding compound.
  • the molding compound may be formed, for example, electrically non-conductive.
  • the power distribution structure 104 may be embedded in the molding compound.
  • the power distribution structure 104 may be more physically connected to the first substrate structure 108-1 and / or the second substrate structure 108-2,
  • Substrate structure 108-2 Substrate structure 108-2.
  • the electrical connector in one embodiment, the electrical connector
  • Power distribution structure 104 have at least one electrically conductive line.
  • the at least one electrical line may for example be arranged or formed flat in the substrate 102, for example, have approximately parallel tracks, for example in the form of a meander or a spiral.
  • the electrical connector in one embodiment, the electrical connector
  • Power distribution structure 104 have a plurality of electrically conductive lines, wherein the plurality of electrically conductive lines have an arrangement in a grid or network structure.
  • the grid or Ne z réelle may for example be formed flat in the substrate.
  • one or more electrically conductive leads may have a diameter or a diameter
  • Width in the beam path of the electromagnetic radiation have in a range of about 1 ⁇ to about 1 mm, for example in a range of about 1 ⁇ to about hr 200 ⁇ , for example in a range of about 10 ⁇ to about 50 ⁇ .
  • the adjacent ones Lines can be the same or different, for example, a different width.
  • the average width of the lines can be used.
  • the average width for example, the width of the lines.
  • one or more electrically conductive lines may have a greater depth in the substrate than the width of the line in FIG
  • the pipe can be oval or rectangular
  • the electrically conductive line have a lower optical visibility and have an equal or higher lateral Stromleiten.
  • Substrate be formed and thus a higher electrical conductivity Leitf and / or a lower optical visibility of the power distribution structure are made possible.
  • the optical visibility can be determined, for example, from the ratio of the optically inactive or opaque surface to the optically active or transparent surface.
  • the vias 116 comprise an electrically conductive material and are electrically conductive with respect to the current distribution structure 104 and the optically active region, for example the electrode 110, 114 connected by means of the vias 116, under operating conditions of the
  • the beam distribution structure 104 may include electrically conductive vias 116 in the first
  • Substrate structure 108-1 and / or the second Subs rat Concept have 108-2, wherein the vias 116 so
  • the substrate 102 may include a
  • the first electrode 110 may be provided with respect to the planar shape of the first electrode 110
  • the method 200 may include providing 202 a substrate 102, the substrate 102 having a
  • the method may further include forming 204 an optically active region 106 having an organic functional layer structure 112 on or over the substrate 102
  • Layer structure 112 is formed for converting the electric current into an electromagnetic radiation and / or for converting an electromagnetic radiation into the electric current.
  • Region 106 may be formed on or above the substrate 102 such that the current distribution structure 104 is disposed in the beam path of the electromagnetic radiation, the optically active region 106 and the substrate 102 have a common interface, wherein the
  • Current distribution structure 104 is electrically connected to the optically active region 106.
  • the substrate 102 may be formed as a laminate at least translucent with respect to the electromagnetic radiation, for example with an electrically conductive embedded in the substrate 102 at least partially
  • the substrate 102 may be any suitable material.
  • these layers could consist of the same or different materials.
  • forming the optically active region 106 may further include forming a first electrode 110 and a second electrode 114
  • Layer structure 112 between the first electrode 110 and the second electrode 114 is formed, and wherein the first electrode 110 on or above the substrate 102nd
  • the optically active Area be formed as a stack of layers; and / or the first electrode 110 and the second electrode 114
  • the providing 202 may include forming the substrate 102.
  • the formation of the substrate 102 may include at least one of a Larain Schlieren one
  • Substrate structure 108 -n have a current distribution structure 104.
  • the substrate structure 108 -n may, for example, comprise a foil and the current distribution structure 104 at least one electrically conductive line.
  • Power distribution structure 104 between a first
  • Substrate structure and a second Subs rat MUST be laminated.
  • an arranging at least one line of the power distribution structure 104 on a first substrate structure 108-1 have, and on a rings a Glaslotpaste on or over the first Subs rat Design and / or the at least one line, wherein the glass solder paste is then glazed that a second substrate structure 108-2 is formed.
  • forming the substrate may include electrically conductive vias 116 in the at least one
  • S bstrat Jardin have, wherein the electrically conductive vias 116 are electrically conductively connected to the at least one electrical line electrically conductive. Forming the vias 116 may include opening the
  • Lei ung have, for example by means of a laser.
  • the openings 404 may be at least partially filled or overfilled with an electrically conductive paste 412, for example by means of a screen printing or
  • the formation of the vias 116 may include depositing an electrically conductive material in the openings 404 of the substrate structure
  • the forming of the substrate 102 may alternatively comprise a structured formation of a substrate structure such that openings 404 are formed in the substrate structure in the regions of the through-contacts 116.
  • Substrate structure 108-n have a glass or from it
  • the power distribution structure 104 may include at least one
  • electrical conduction and electrically conductive vias 116 are formed, wherein the vias 116 are electrically conductively connected to the at least one electrical line, such that the at least one electrical line by means of the vias 116 with the first electrode 110 or the second electrode 114th
  • the electrically conductive can be coupled.
  • the through contacts 116 extend from the electrically conductive line to the interface to the optically active region.
  • the power distribution structure 104 may be formed on a foil, wherein the foil between the first substrate structure 108-1 and the second
  • Substrate structure 108-2 is arranged.
  • the power distribution structure 104 may be formed in an air duct, for example
  • the at least one electrically conductive line can be arranged in the air duct.
  • the power distribution structure 104 may be at least partially surrounded by a molding compound.
  • the molding compound may be formed, for example, electrically non-conductive.
  • the molding compound may be formed, for example, electrically non-conductive.
  • Current distribution structure 104 are embedded in the molding compound.
  • the current distribution structure can be physically connected to the first substrate structure 108-1 and / or the second substrate structure 108-2,
  • Substrate structure 108-2 Substrate structure 108-2.
  • the electrical connector in one embodiment, the electrical connector
  • Power distribution structure 104 may be formed with at least one electrically conductive line.
  • the at least one electrically conductive line can be arranged or formed flat in the substrate 102, for example as partially parallel tracks in the form of a meander or a spiral.
  • Power distribution structure ei e or more electrically have conductive lines which are electrically contacted by one or more electrically conductive contact strips or can be.
  • Contact strips can be arranged, for example, in one or more edge regions of the substrate 102.
  • the electrical connector in one embodiment, the electrical connector
  • electrically conductive lines for example, in a grid, mesh or sieve structure or arranged as parallel Lei openings are formed.
  • the Sieb Concept
  • the substrate 102 can be formed flat in the substrate 102, so that the lines are arranged flat in the substrate.
  • the at least one conduit can be embedded in a still fused substrate structure, for example a flat glass, so that after cooling and / or solidification the substrate is formed, for example in one
  • Float glass method for example, before molding.
  • the power distribution structure 104 may include a first power distribution structure 104 and a second power distribution structure 104, the first power distribution structure 104 being electrically isolated from the second power distribution structure 104; and wherein the first power distribution structure 104 is electrically coupled to the first electrode and the second power distribution structure 104 is electrically coupled to the second electrode.
  • Power distribution structure 104 may be formed in different layers.
  • the power distribution structure 104 may be at least partially exposed such that the
  • Current distribution structure 104 is electrically contacted, for example, at the edge of the optoelectronic component.
  • the power distribution structure 104 may be formed to include at least one
  • the power distribution structure 104 may further comprise electrically conductive vias 116 in the first substrate structure 108-1 and / or the second substrate structure 108-2, wherein the vias 116 so
  • first electrode 110 and / or the second electrode 114 are electrically conductively connected by means of the vias 116 with the at least one line of the power distribution structure 104.
  • the power distribution structure 104 may further include electrically conductive vias 116 in the first
  • the optoelectronic component may further comprise electrically conductive vias 116 through the. have first electrode and the organic functional layer structure, wherein the vias 116 are formed such that the first electrode 110 with the at least one line of the power distribution structure 104 is electrically conductively connected.
  • the vias and the at least one electrical line may be formed in a common and / or single process.
  • the method may further include
  • an encapsulation structure 328 on or over the optically active region 106 - see description below; wherein the encapsulation structure 328 hermetically sealed with respect to a diffusion of water and / or oxygen through the encapsulation structure in the optically active
  • Region 106 is formed.
  • the encapsulation structure 328 and the substrate 102 may be formed such that the encapsulation structure 328 is connected to the substrate 102
  • the substrate 102 may be formed with at least one electrical connection 504, wherein the electrical connection 504 is electrically conductively connected to the power distribution structure 104, and wherein the electrical connection 504 is free-lying and electrically contactable.
  • the substrate 102 may be such
  • the electromagnetic radiation is at least partially transmitted through the substrate 102, wherein the substrate 102 is substantially free of optically inactive regions 424, for example, except for the region of the current distribution structure.
  • the current distribution structure can be partially or completely made of an electrically conductive, in the visible wavelength range translucent or
  • the optoelectronic component 100 can be used as an organic optoelectronic component
  • Photodetector an organic solar cell and / or an organic light emitting diode.
  • Optoelectronic device 100 further includes a hermetically sealed substrate 326, an active region 106 and an encapsulation structure 328 - for example
  • the hermetically sealed substrate may include the substrate 102 and a first barrier push 304.
  • the organic functional layer structure 106 may include one, two or more functional layered structure units and one, two or more interlayer structures between the layered structure units.
  • the organic functional layer structure 112 may be, for example, a first organic functional layer structure unit 316, an interlayer structure 318 and a second organic functional layer structure unit 320.
  • the encapsulation structure 328 may be a second
  • Barrier layer 308, a coherent connection layer 322 and a cover 324 have.
  • the first barrier layer 304 may include or be formed from one of the following materials:
  • the first barrier layer 304 may be by means of one of
  • ALD Atomic Layer Deposition
  • PEALD Plasma Absorption Deposition
  • CVD chemical vapor deposition
  • PECVD PECVD Deposition
  • Partial layers may have one or more
  • Atomic layer deposition processes are deposited
  • the first barrier layer 304 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm
  • a layer thickness of about 10 nm to about 100 nm according to an embodiment for example about 40 nm according to an embodiment.
  • the first barrier layer 304 may be one or more
  • high-index materials on iron for example one or more materials having a high refractive index, for example having a refractive index of at least 2.
  • Barrier layer 304 may be omitted, for example, in the event that the substrate 102 is formed hermetically sealed, for example, glass, metal, metal oxide on or from it.
  • the first electrode 304 may be formed as an anode or as a cathode.
  • the first electrode 110 may be one of the following electrically conductive material on or formed of iron: a metal; a conductive conductive oxide (TCO); a network of metallic nanowires and particles, for example of Ag, which are combined, for example, with conductive polymers; a network of carbon nanotubes that
  • the first electrode 110 made of a metal or a metal may comprise or be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of this material ,
  • the first electrode 110 may be one of the following as a transparent conductive oxide
  • zinc oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • Metal oxygen compounds such as ZnO, SnO 2 or ⁇ .2 ⁇ 3 also include ternary metal oxygen compounds, for example AIZnO, Zn 2 SnO 4 , CdSn 3 , ZnSnO 3 , Mgln 2 O 4 ,
  • Embodiments are used. Farther
  • the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).
  • the first electrode 110 may be a layer or a
  • the first electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one
  • ITO indium-tin-oxide
  • the first electrode 304 may, for example, have a layer thickness in a range of 10 nm to 500 nm,
  • the first electrode 110 may be a first electrical
  • the first electrical potential may be provided by a power source, such as a power source or a voltage source.
  • the first electrical potential may be applied to an electrically conductive substrate 102 and the first electrode 110 may be indirectly electrically supplied through the substrate 102.
  • the first electrical potential may be, for example, the
  • Ground potential or another predetermined reference potential is ground potential or another predetermined reference potential.
  • FIG. 3 shows an optoelectronic component 100 having a first organic functional layer structure unit 316 and a second organic functional one
  • Layer structure unit 320 shown.
  • Layer structure 112 but also have more than two organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70,
  • Layer structures may be the same or different, for example the same or different
  • the second organic functional layer structure unit 320 may be one of those described below
  • Layer structure unit 316 may be formed.
  • the first organic functional layer structure unit 316 may include a hole injection layer, a
  • Electron injection layer on iron In an organic functional layer structure unit 112, one or more of said layers may be provided, wherein like layers may have physical contact, may only be electrically connected to each other, or may even be electrically isolated from each other, for example, formed side by side. Individual layers of said layers may be optional.
  • a hole injection layer may be formed on or above the first electrode 110.
  • the Lochinj can edictions slaughter include one or more of the following materials or may be formed from: HAT-CN, Cu (I) FBZ, MoO x, W0 X, VO x, ReO x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc; NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N 1 -bis (phenyl) -benzidine); TPD (N, '- bis (3-methylphenyl) -, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) - ⁇ , '-bis (phenyl) benzidine); Spi o
  • the hole injection chip may have a layer thickness in a range of about 10 nm to about 1000 nm,
  • Hole transport layer may be formed.
  • Hole transport layer may be one or more of the following materials on iron or formed therefrom: NPB ( ⁇ , ⁇ '-bis (aphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) benzidine); beta-NPB ⁇ , ⁇ '-bis (naphthalen-2-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); TPD (N, N 1 -bis (3-methylphenyl) -N, N '-bis (phenyl) -benzidine); Spiro TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine);
  • Spiro-NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) -N, 1 -bis (phenyl) -spiro); DMFL-TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) -N, N 1 -bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9,9-diphenyl-fluorene); DPFL-PB (N, '-Bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -9, 9-diphenyl-fluorene); Spiro-TAD (2,
  • N '-bis (phenanthrene-9-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine; 2,7-bis [N, -bis (9,9-spiro-bifluoren-2-yl) -amino] -9, 9-spirobifluorene 2,2 '-bis [N, -bis (bipheny1-4 -y1) mino] 9,9-spirobifluorene; 2,2 'bis (N, -di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4 - (N, -ditolylamino) -phenyl] cyclohexane; 2, 2 ', 7, 7' - tetra (N, N-diol-tolyl) amino-spiro-bifloren; and N,
  • the hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • functional layered structure units 316, 320 may each layer one or more emitter layers on iron,
  • An emitter layer may include or be formed from organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules”), or a combination of these materials.
  • the op oelektronische device 100 may in a
  • Emitte will coat one or more of the following materials on iron or be formed from: organic or
  • organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2 - ( 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent
  • Such non-polymeric emitters are, for example, separable by thermal evaporation. Furthermore, can
  • Polymer emitters are used, which can be deposited, for example by means of a wet chemical process, such as for example, a spin coating method (also referred to as spin coating).
  • a spin coating method also referred to as spin coating
  • the emitter materials may be suitably embedded in a matrix material, for example one
  • Emitter layer have a layer thickness in a range of about 5 nra to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • Emitter layer have multiple sub-layers that emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression.
  • it can also be provided to arrange a converter material in the beam path of the primary emission produced by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.
  • the organic functional layer structure unit 316 may include one or more emitter layers configured as a hole transport layer.
  • the organic functional layer structure unit 316 may include one or more emitter layers configured as an electron transport layer. On or above the emitter layer, a
  • the electron transport layer may include or be formed from one or more of the following materials: NET- 18; 2,2 ", 2" - (1, 3, 5-benzinetriyl) tris (1-phenyl-1H-benzimidazoles); 2- (4-biphenylyl) -5- (- tert -butyl-phenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-, 7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato lithium, 4-
  • the electron transport layer may have a layer thickness
  • a first electron transport layer 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • a second electron transport layer 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • Electron injection layer may be formed.
  • Electron injection layer may comprise or be formed from one or more of the following materials: NDN-26, MgAg, Cs 2 C0 3 , CS 3 PO 4, Na, Ca, K, Mg, Cs, Li, LiF;
  • the electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example, in a range of about 20 nm to about 50 nm, for example about 30 nm.
  • the second organic functional layer structure unit 320 may be formed over or adjacent to the first functional layer structure units 316. Electrically between the organic functional
  • Layer structure units 316, 320 may be a
  • Interlayer structure 318 may be formed.
  • the first layer 318 may be formed.
  • Interlayer structure 318 may be formed as an intermediate electrode 318, for example according to one of
  • Intermediate electrode 318 may be electrically connected to an external voltage source.
  • the external voltage source may provide, for example, a third electrical potential at the intermediate electrode 318.
  • the intermediate electrode 318 can also have no external electrical connection, for example in that the intermediate electrode has a floating electrical potential.
  • Interlayer structure 318 may be formed as a charge generation layer structure 318 (CGL).
  • a charge carrier pair generation layer structure 318 may be one or more
  • Electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting charge carrier pair are Electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting charge carrier pair
  • the charge carrier pair generation layer (s) and the hole-conducting charge carrier generation layer (s) may each be formed of an intrinsically conductive substance or a dopant in a matrix.
  • the charge carrier pair generation layer structure 318 should be designed with respect to the energy levels of the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) in such a way that at the interface of an electron-conducting charge carrier pair
  • the carrier pair generation layer structure 318 may further include a sandwich between adjacent layers
  • Each organic functional layer structure unit 316, 320 may, for example, have a layer thickness of a maximum of approximately 3 ⁇ m, for example a layer thickness of at most approximately 1 ⁇ m, for example a layer thickness of approximately approximately 300 nm.
  • the optoelectronic component 100 may optionally have further organic functional layers, for example arranged on or above the one or more
  • the further organic functional layers can be, for example, internal or external coupling / decoupling structures, which are the
  • the second electrode 114 may be formed.
  • the second electrode 114 may be formed according to any one of the configurations of the first electrode 110, wherein the first electrode 110 and the second electrode 114 may be the same or different.
  • the second electrode 114 may be formed as an anode, that is, as a hole-injecting electrode, or as a cathode, that is, as one
  • the second electrode 114 may have a second electrical connection to which a second electrical connection
  • the second electrical potential can be applied.
  • the second electrical potential may be from the same or another source of energy
  • the second electrical potential may be different from the first electrical potential and / or the optionally third electrical potential.
  • the second electrical potential may, for example, have a value such that the Difference from the first electrical potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about 3 V. up to about 12 V.
  • the second barrier layer On the second electrode 114, the second barrier layer
  • the second barrier layer 308 may also be referred to as
  • TFE Thin film encapsulation
  • the second barrier layer 308 may be formed according to one of the embodiments of the first barrier layer 304.
  • Barrier layer 308 can be dispensed with.
  • the optoelectronic component 100 may, for example, have a further encapsulation structure, as a result of which a second barrier layer 308 may be optional, for example a cover 324, for example one
  • one or more input / output coupling layers may be formed in the optoelectronic component 100, for example an external outcoupling foil on or above the substrate 102 (not shown) or an internal one
  • Decoupling layer (not shown) in the layer cross section of the optoelectronic component 100.
  • the input / output coupling layer can be a matrix and distributed therein
  • Antireflective coatings for example, combined with the second barrier layer 308) in the opto-electronic
  • Component 100 may be provided.
  • Connection layer 322 may be provided, for example, an adhesive or a paint.
  • a cover 324 can be connected conclusively to the second barrier layer 308, for example by being glued on.
  • transparent material can be particles
  • the coherent bonding layer 322 can act as a scattering layer and improve the color angle eryaks and the
  • Metal oxide for example, silicon oxide ⁇ S1O 2 ), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium-tin oxide (ITO) or indium-zinc oxide (IZO), gallium oxide (Ga 2 O x ) alumina, or titanium oxide.
  • Other particles may also be suitable as long as they have a refractive index which is different from the effective refractive index of the matrix of the coherent bonding layer 322, for example air bubbles, acrylate or glass bubbles.
  • metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.
  • the coherent bonding layer 322 may have a layer thickness of greater than 1 ⁇ on iron, for example a
  • the coherent connection layer 322 may be such
  • Such an adhesive may for example be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3.
  • the adhesive can also be a high-index adhesive, for example
  • an electrically insulating layer (not limited to, between the second electrode 114 and the interlocking connecting layer 322, an electrically insulating layer (not shown).
  • SiN for example, having a layer thickness in a range from about 300 nm to about 1.5 ⁇ m, for example with a layer thickness in a range from about 500 nm to about 1 ⁇ , to electrically unstable materials
  • a cohesive interconnect layer 322 may be optional, for example, if the cover 324 is formed directly on the second barrier layer 308, such as a glass cover 324 formed by plasma spraying.
  • the electrically active region 106 may also be a so-called getter layer or getter structure,
  • a laterally structured getter layer may be arranged (not shown).
  • the getter layer may have a layer thickness of greater than about 1 ⁇ , for example, a layer thickness of several ⁇ ,
  • the getter layer may include a lamination adhesive or may be embedded in the interlocking tie layer 322.
  • a cover 324 may be formed on or above the coherent connection layer 322.
  • the cover 324 can be connected to the electrically active region 106 by means of the coherent connection layer 322 and protect it from harmful substances.
  • the cover 324 may include, for example, a glass cover 324, a
  • Plastic film cover 324 be.
  • the glass cover 324 can be connected to the second barrier layer 308 or the electrically active region 106 by means of a glass frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 get connected .
  • the cover 324 and / or the integral interconnect layer 322 may have a refractive index (for example, at a wavelength of 633 nm) of 1.55.
  • a thin metal mesh 402 or a plurality of thin metal meshes 402 are embedded between a first glass sheet 108-1 and a second glass sheet 108-2, for example, as illustrated in FIG.
  • Metal grid 402 may be formed, for example, in a composite foil, for example in a foil made of a thermoplastic elastomer (TPU).
  • TPU thermoplastic elastomer
  • Power distribution structure 104 from.
  • the substrate structures 108 - 1/2 and the current distribution structure 104 may
  • the metal wires of the embedded metal grid 402 may have a thickness in a range of about 10 ⁇ to about 100 ⁇ , for example, in a range of
  • the substrate 102 produced in this way can subsequently be used as a carrier for the method 200 for producing the optoelectronic component 100, for example an OLED - see, for example, FIG. 4G.
  • the current distribution structure 104 may be electrically conductively connected to at least one of the electrodes 110, 114.
  • an electrically conductive connection between the first electrode 110 and the metal grid 104 can be formed.
  • FIG. 4D Top view (FIG. 4D) as a component 406.
  • the formation of the holes 404 can, for example, by means of a laser process 408 (laser piercing) or
  • the holes 404 can be formed wet-chemically or dry-chemically, for example by means of an etching process, for example wet-chemical etching or plasma etching.
  • Subsra structure 108-2 be removed so that the
  • Metal wires are exposed locally, for example
  • the holes 404 may be filled with an electrically conductive material. As a result, vias 116 can be formed in the second substrate structure 108-2.
  • Electrode 110 are formed.
  • the optional first barrier layer 304 (see FIG. 3) can also be formed before or after the formation of the vias.
  • the vias 116 may be formed with the formation of the first electrode 110, for example, in which a paste 412 is applied to the second substrate structure 108-2 by means of a squeegee 410 such that the holes 404 are filled with electrically conductive material and a electrically conductive connection between power distribution structure 104 and electrode 110, 114 may form (for example, illustrated in the side view (Fig. 4E) and the plan view (Fig.4F)).
  • the electrically conductive material paste may be dried to solidify.
  • volatile constituents for example binders
  • the paste can be crosslinked, for example thermally and / or by means of UV irradiation.
  • the electrically conductive material paste may be from the surface of the second Substrate structure 108-1 are removed. Subsequently, after an optional drying and / or cleaning of the substrate 102, for example, the first barrier layer 304 and / or the first electrode 110 on the second
  • Substrate structure are formed.
  • the first electrode 110 by means of a wet or
  • Deposition process are applied to the substrate 102 or. be trained on it.
  • the formation of the further layers of the OLED see
  • FIG. 3 and FIG. 4G description of FIG. 3 and FIG. 4G can be carried out as described wet-chemically and / or by means of vacuum deposition.
  • Fig. 4G In the schematic cross-sectional view in Fig. 4G is a
  • Substrate structure 108-1 Substrate structure 108-1, power distribution structure 104, second substrate structure 108-2 and vias 116. On the
  • Substrate 102 for example, the first electrode 110, the organic functional layer structure 112 formed and the second electrode 114 is formed.
  • the second electrode 114 is by means of an electrical
  • the second electrode 114 may be connected to a
  • the electrical connection layer 414 be physically and electrically connected.
  • the electrical connecting layer 414 may be formed in the geometric edge region of the substrate 102 on or above the substrate 102, for example laterally next to the first electrode 110
  • Connecting layer 414 is another one
  • Electrode 110 isolated. On or above the two electrodes 114, for example, the second bar ieren Medntechnik 308th arranged such that the second electrode 114, the
  • barrier layer 308 is, for example, a cover 324, i. a substrate 324, applied by means of an adhesive layer 322.
  • the region of the optoelectronic component 100 having an organic functional layer structure 112 on or above the substrate 102 may be referred to as the optically active region 422.
  • the optically active region 422 Approximately the region of the optoelectronic component 100 having an organic functional layer structure 112 on or above the substrate 102 may be referred to as the optically active region 422.
  • optically inactive region 424 Functional layer structure 112 on or above substrate 102 may be referred to as optically inactive region 424.
  • the optically inactive region 424 may, for example, be arranged flat next to the optically active region 422.
  • the electrical insulation 416 may be configured such that a current flow between two electrically
  • the substance or the substance mixture of the electrical insulation can be, for example, a coating or a coating agent, for example a polymer and / or a lacquer.
  • the lacquer may, for example, have a coating substance which can be applied in liquid or in powder form,
  • the electrical insulation 416 can be applied or formed, for example by means of a printing process, for example, structured.
  • the printing method may include, for example, an inkjet printing (Inkj et - Printing), a screen printing and / or a pad printing (Päd- Printing).
  • the electrical connection layer 414 may mix as a substance or a substance or a substance mixture similar to the electrodes 110, 114 according to one of the above-described
  • Embodiments have or be formed from it.
  • a contact pad 418, 420 may be electrically and / or physically connected to an electrode 110, 114, for example by means of a connection layer 414. However, a contact pad 418, 420 may also be formed as a region of an electrode 110, 114 or a connection layer 414.
  • the contact pads 418, 420 can comprise as fabric or a mixture of substances a substance or a substance mixture similar to the electrodes 110, 114 according to one of the embodiments described above or be formed thereof, for example as a metal layer structure with at least one chromium layer and at least one aluminum layer, for example, chromium-aluminum-chromium (Cr-Al-Cr).
  • the optically inactive region 424 may be, for example
  • Contact surfaces 418, 420 (contact pads), for example in the form of contact strips, for electrically contacting the
  • the optoelectronic component 100 may be formed such that contact pads 418, 420 are formed for electrically contacting the optoelectronic component 100, for example by electrically conductive layers, for example electrical connection layers 414, the electrodes 110, 114 or the like in the region of the contact pads 418, 420 are at least partially exposed (not
  • the optoelectronic component 100 may further comprise electrically conductive vias 116 through the first electrode 110 and the organic functional one
  • Layer structure 112 wherein the vias 116 are formed such that the second electrode 114 with the power distribution structure 104 is electrically connected.
  • the second electrode 114 may be electrically connected to the metal grid 402 in addition to or instead of the first electrode 110 (illustrated in FIG. 5A, for example).
  • the first electrode 110 illustrated in FIG. 5A, for example.
  • Power distribution structure 104 to be electrically connected to the second electrode 114 and electrically from the first
  • Power distribution structure 104 a first
  • Power distribution structure 104-2 wherein the first power distribution structure 104-1 is electrically isolated from the second power distribution structure 104-2; and wherein the first power distribution structure 104-1 is electrically coupled to the first electrode 110 and the second power distribution structure 104-2 is electrically coupled to the second electrode 114.
  • the applied organic functional layer structure 112 and the first electrode 110 can be removed via the vias 116 in the second sub-rat Quilt 104-2, an insulation 502 in the holes in the organic
  • the holes in the organic functional layer structure 112 and the first electrode 110 may be electrically insulated from the organic functional layer structure 112 and the first electrode 110 filled with an electrically conductive material, for example, with the formation of the second electrode 114 or before.
  • the applied organic functional layer structure 112 and the first electrode 110 and the second substrate structure 108-2 are removed locally above the metal wires of the metal grid 402 of the power distribution structure 104; an insulation 502 in the holes in the organic functional
  • Layer structure 112 the first electrode 110 and / or the second substrate structure 108-2 are formed; and thereafter forming the second electrode 114, for example, by vapor deposition.
  • the first electrode 110 and the second substrate structure 108-2 can be electrically isolated from the organic functional layer structure 112 and the first electrode 110 with an electric
  • the conductive material for example, with the formation of the second electrode 114 or before.
  • the second electrode 114 or before.
  • Power distribution structure 104 in addition to the electrical connection to the at least one electrode 110, 114 by means of the vias 116; with at least one of
  • the substrate 102 is formed so that the power distribution structure 104 is free from freely accessible external electrical contacts, that is, acts as a purely internal power distribution structure.
  • the power distribution structure may be electrically insulated outwardly with respect to the exposed areas of the substrate 102.
  • the power distribution structure may be electrically insulated outwardly with respect to the exposed areas of the substrate 102.
  • Stromvertei distribution structure 104 an electrical contact 504 outward with respect to the exposed surfaces of the
  • Substrates 102 have - for example, illustrated in Fig. 5B.
  • the active region 106 may be surrounded by an encapsulation structure 328 and hermetically sealed with respect to water and / or oxygen.
  • the Encapsulation structure 328 may be, for example, such
  • Power distribution structure 104 is done - for example
  • Metal grid 402 may be laterally out of the substrate 102
  • Component (without optically inactive region 424) allows (seamless tiling).
  • the optoelectronic component 100 may have an encapsulation structure 328 on or above the optically active region 106, wherein the
  • Encapsulation structure 328 hermetically sealed with respect to diffusion of water and / or oxygen through the
  • Encapsulation structure 328 is formed in the optically active region 106.
  • the encapsulation structure 328 and the substrate 102 may be formed such that the
  • Power distribution structure 104 is electrically conductive contacted.
  • the substrate 102 may include at least one electrical connection 504, wherein the electrical connection 504 is electrically conductive with the
  • Power distribution structure 104 is connected, and wherein the electrical connection 504 exposed and electrically
  • electrical connection 504 to the power distribution structure 104 be formed hermetically sealed with respect to a diffusion of water and / or oxygen in the layer of the power distribution structure 104.
  • a diffusion of water and / or oxygen in the layer of the power distribution structure 104 be formed hermetically sealed with respect to a diffusion of water and / or oxygen in the layer of the power distribution structure 104.
  • Stromleitf ability can be integrated into the glass substrate.
  • the topographical structure for example of busbars on the substrate, can be avoided or reduced, which enables easier processing and reduces the danger of short circuits.
  • the substrate with integrated current distribution structure is optimally suitable for liquid-processed components.
  • borderless components are made possible by means of the substrate, for example as a glass substrate, that is to say components without optically inactive components. Edge, for example, as the power supply of the optoelectronic component via a side

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un composant optoélectronique (100) selon divers modes de réalisation, le composant optoélectronique (100) comprenant : une zone optiquement active (106) comportant une structure stratifiée organique fonctionnelle (112), la structure stratifiée organique fonctionnelle (112) étant configurée pour convertir un courant électrique en un rayonnement électromagnétique et/ou pour convertir un rayonnement électromagnétique en un courant électrique ; un substrat (102) étant disposé au moins dans le trajet de faisceau du rayonnement électromagnétique ; et le substrat (102) comportant au moins dans le trajet de faisceau du rayonnement électromagnétique une structure de distribution de courant (104) destiné au courant électrique, la région optiquement active (106) et le substrat (102) comportant une interface commune, la structure de distribution de courant (104) étant formée sur le substrat (102) et s'étendant le long de l'interface commune.
PCT/EP2015/053626 2014-02-21 2015-02-20 Composant optoélectronique et procédé de production d'un composant optoélectronique WO2015124729A1 (fr)

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DE102014102274.2 2014-02-21

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EP3982048B1 (fr) 2020-10-06 2023-05-24 Siemens Schweiz AG Commande d'échange de chaleur

Citations (4)

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Publication number Priority date Publication date Assignee Title
WO2007119200A2 (fr) * 2006-04-18 2007-10-25 Koninklijke Philips Electronics N.V. Composant electro-optique et son procede de fabrication
EP2151876A1 (fr) * 2008-08-05 2010-02-10 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Composant de transport électrique, son procédé de fabrication, et dispositif électro-optique et dispositif opto-électrique
WO2010132715A2 (fr) * 2009-05-14 2010-11-18 Sri International Électrodes organiques transparentes à haut rendement et à faible coût pour dispositifs optoélectroniques organiques
EP2282360A1 (fr) * 2009-08-06 2011-02-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Dispositif opto-électrique et son procédé de fabrication

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Publication number Priority date Publication date Assignee Title
US6509581B1 (en) * 2000-03-29 2003-01-21 Delta Optoelectronics, Inc. Structure and fabrication process for an improved polymer light emitting diode
DE102012214248A1 (de) * 2012-08-10 2014-02-13 Osram Opto Semiconductors Gmbh Bauelemente und verfahren zum herstellen eines bauelementes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007119200A2 (fr) * 2006-04-18 2007-10-25 Koninklijke Philips Electronics N.V. Composant electro-optique et son procede de fabrication
EP2151876A1 (fr) * 2008-08-05 2010-02-10 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Composant de transport électrique, son procédé de fabrication, et dispositif électro-optique et dispositif opto-électrique
WO2010132715A2 (fr) * 2009-05-14 2010-11-18 Sri International Électrodes organiques transparentes à haut rendement et à faible coût pour dispositifs optoélectroniques organiques
EP2282360A1 (fr) * 2009-08-06 2011-02-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Dispositif opto-électrique et son procédé de fabrication

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