WO2014048917A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2014048917A1
WO2014048917A1 PCT/EP2013/069841 EP2013069841W WO2014048917A1 WO 2014048917 A1 WO2014048917 A1 WO 2014048917A1 EP 2013069841 W EP2013069841 W EP 2013069841W WO 2014048917 A1 WO2014048917 A1 WO 2014048917A1
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WO
WIPO (PCT)
Prior art keywords
contact surface
electrode
optoelectronic component
optically active
layer
Prior art date
Application number
PCT/EP2013/069841
Other languages
German (de)
English (en)
Inventor
Andrew Ingle
Marc Philippens
Tilman Schlenker
Original Assignee
Osram Opto Semiconductors Gmbh
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Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2014048917A1 publication Critical patent/WO2014048917A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes

Definitions

  • organic light-emitting diodes organic light emitting diode - OLED
  • organic solar cell find increasingly widespread application.
  • An OLED can, for example, two electrodes, for example an anode and a cathode, with an organic
  • the organic functional layer system may comprise one or more emitter layers in which
  • CGL Charge pair generation charge generating layer
  • HT hole transport layer
  • E electron transport layer
  • the organic functional layer system or at least a part thereof may comprise organic substances and / or organic mixtures.
  • organic mixtures may be susceptible to harmful environmental influences. Under a harmful
  • Environmental influences can be understood as all influences that potentially lead to degradation or aging, such as a crosslinked or crystallized, organic substances or organic mixtures and thus, for example, limit the service life of the OLED.
  • a harmful environmental influence can be, for example, a substance harmful to organic substances or organic substance mixtures, for example oxygen and / or water.
  • the organic, electronic component is encapsulated-for example, shown in FIG. 3 for an OLED 300.
  • FIG. 3 shows a schematic cross-sectional view of a conventional organic light-emitting diode.
  • a first electrode 310 and a contact pad 306 are arranged on a carrier 302.
  • a first electrode 310 and a contact pad 306 are arranged on the first electrode 310.
  • Layer structure 312 is a second electrode 314
  • the second electrode 314 is electrically isolated from the first electrode 310 by means of electrical insulations 304.
  • the second electrode 314 is formed such that an electrical connection with the contact pad 306 is formed.
  • OLED 300 with one for harmful environmental influences
  • a thin film 308 which is impermeable to water and oxygen.
  • the encapsulation layer 308 may be mechanically damaged during operation.
  • a glass cover 318 is applied to the encapsulation layer 308 by means of a glass cover 318
  • Glass cover 318 for example by means of a frit bonding / glass soldering / seal glass bonding, by means of a conventional glass solder in the geometric edge regions of the OLED on the
  • Encapsulation layer 308 are applied (not
  • busbars for current distribution in the optically active surface are conventionally set up in order to achieve a homogeneous current distribution and thus, for example, a homogeneous brightness of the OLED 300.
  • contact surfaces are provided in the optically inactive area, for example the geometric edge of the OLED 300 - for example shown in FIG. 3 for a contact pad 306 of the OLED 300 as contact area 324 or contact point 324 with a width 320.
  • Component has conventionally a width of larger
  • the contact surfaces 324 may have a metal layer structure, for example a chromium-aluminum-chromium layer structure, which is already produced during production,
  • the chrome-aluminum-chromium layer structure can For example, have layer thicknesses of 100 nm (Cr) / 500 nm (Al) / 100 nm (Cr).
  • Layer structure 312 to be able to transport, the contact surfaces 324 are conventionally relatively long and wide
  • optically inactive contact pads 324 reduce the optically inactive contact pads 324
  • Carrier 302 i. In manufacturing, the substrate utilization is impaired and the cost of the optically active surface is increased. Furthermore, the optically inactive
  • the substrate surface on which the optoelectronic component is manufactured can be any suitable substrate surface on which the optoelectronic component is manufactured.
  • an organic-inorganic substance can be a
  • the term "substance” encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance
  • Mixture be understood something that consists of two or more different ingredients, whose
  • components are very finely divided.
  • a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid
  • the term "material” can be used synonymously with the term “substance”.
  • the dimensional stability of a geometrically shaped substance can be understood on the basis of the modulus of elasticity and the viscosity.
  • a fabric may in various embodiments be dimensionally stable, i. be considered in this sense as hard and / or firm, if the substance has a viscosity in one
  • a substance may be considered malleable, ie soft and / or fluid in that sense, if the substance is a
  • Viscosity m in a range of about 1 x 10 Pa-s to
  • a dimensionally stable substance can be added by adding
  • Plasticizers for example, solvents, or increasing the temperature become plastically moldable, i. be liquefied.
  • a plastically malleable substance can by means of a
  • Changing the viscosity for example, increasing the viscosity from a first viscosity value to a second viscosity value.
  • the second viscosity value may be many times greater than the first viscosity value, for example in a range of about 10 to
  • the fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.
  • the solidification of a substance or mixture of substances may include a process or process, be removed at low molecular weight components of the substance or mixture, for example, solvent molecules or low molecular weight, uncrosslinked components of the substance or mixture, for example, drying or chemical crosslinking of the substance or of the mixture.
  • low molecular weight components of the substance or mixture for example, solvent molecules or low molecular weight, uncrosslinked components of the substance or mixture, for example, drying or chemical crosslinking of the substance or of the mixture.
  • Mixture may in the formable state a higher
  • a body of a dimensionally stable substance or mixture of substances may be malleable, for example when the body is arranged as a film, for example one
  • Plastic film a glass foil or a metal foil.
  • Such a body may, for example, be termed mechanically flexible, since changes in the geometric shape of the body, for example, bending of a film,
  • a mechanically flexible body for example a film
  • a mechanically flexible body can also be plastically moldable, for example by the mechanically flexible body being solidified after deformation, for example a
  • connection of a first body to a second body may be positive, non-positive and / or cohesive.
  • the connections may be detachable, i. reversible, for example, a screw, a
  • connections may also be non-detachable, i. irreversible, for example a riveted joint, an adhesive bond.
  • a non-detachable connection can only by destroying the
  • first body perpendicular, i. normal, moving in the direction of the restricting surface of the second body.
  • a pin (first body) in a blind hole (second body) may be restricted in motion in five of the six spatial directions.
  • a static friction in addition to the normal force of the first body on the second body, ie, a physical contact of the two bodies under pressure, a static friction can restrict movement of the first body parallel to the second body.
  • Self-locking a screw in a complementarily shaped thread be.
  • Self-locking can be understood as resistance through friction.
  • the first body can be connected to the second body by means of atomic and / or molecular forces.
  • Cohesive compounds can often be non-releasable compounds.
  • a conclusive fixing of an optoelectronic component can be understood, for example, as a conclusive connection of the optoelectronic component to a holder.
  • an electronic component can be understood as a component which controls, controls or amplifies an electrical component
  • An electronic component can have a component from the group of components:
  • a diode for example, a diode, a transistor, a
  • Thermogenerator an integrated circuit, a thyristor.
  • a thyristor In the context of this description can under a
  • the optoelectronic component has an optically active region.
  • an optoelectronic region can be defined under an optically active region
  • emitting electromagnetic radiation can emit
  • absorbing electromagnetic radiation may include absorbing
  • An optoelectronic component which has two flat, optically active sides, for example
  • the optically active region can also have a planar, optically active side and a planar, optically inactive one
  • an organic light-emitting diode which is set up as a top emitter or bottom emitter.
  • a component emitting electromagnetic radiation can be, for example, a semiconductor component emitting electromagnetic radiation and / or as an electromagnetic component
  • electromagnetic radiation emitting diode as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • light emitting diode light emitting diode
  • organic light emitting diode organic light emitting diode
  • Component may be part of an integrated circuit in various embodiments. Furthermore, a Be provided plurality of light emitting devices, for example housed in a common
  • Optoelectronic device such as an organic light emitting diode (OLED), an organic photovoltaic system, such as an organic solar cell, in the organic functional layer system, an organic substance or an organic substance mixture or be formed therefrom, for example, for providing an electromagnetic radiation a provided electric power or for providing an electric current from a provided OLED
  • OLED organic light emitting diode
  • organic photovoltaic system such as an organic solar cell
  • electromagnetic radiation is set up.
  • An optoelectronic component comprising: an optically active region, an optically inactive region and a contact surface; wherein the contact surface forms an electrical contact of the optoelectronic component; wherein the optically active region comprises an electrode; wherein the contact surface is electrically connected to the electrode; wherein a part of the contact surface in the optically active
  • inactive area is arranged; wherein the contact surface at least partially surrounds the electrode; and wherein the proportion of the contact area in the optically inactive area is smaller than in the optically active area.
  • the optically active region can be used for receiving and / or providing
  • the optically inactive region can be set up for electrical contacting and / or conclusive fixing of the optoelectronic component. In one embodiment, at least a part of the
  • the optically active region may have at least one optically active side and at least one optically inactive side.
  • the optoelectronic component can have a second contact surface and a second electrode
  • the second contact surface is electrically connected to the second electrode.
  • the first contact surface may have a different electrical potential than the second
  • a dielectric structure may be provided between the first contact surface and the second contact surface be formed, which electrically isolates the first contact surface of the second contact surface.
  • the dielectric structure may be configured such that the optoelectronic component is protected against an electrical breakdown and / or an overvoltage, for example as a spark gap, a varistor or a protective diode.
  • the optically active region may have an electrically active region which is connected to a
  • Barrier thin film is surrounded, wherein at least a part of the contact surface is formed on or above the barrier thin film, for example in a physical contact with the barrier thin film is formed.
  • a cover may be formed between the contact surface and the barrier thin film.
  • the barrier film and the dielectric structure may be arranged relative to one another such that an electrical breakdown is derived through the dielectric structure.
  • the barrier film is of a material composition and thickness such that electrical breakdown between the pad and the electrode does not occur through the barrier film.
  • the optically active region can be in the
  • Beam path of the optically active side having a scattering layer which is designed such that the optically inactive region is optically reduced by deflecting electromagnetic radiation from the optically active region in the optically inactive region or optically
  • the contact surface as a
  • the contact surface may comprise or be formed from a substance or substance mixture which has a high electrical conductivity, for example a metal or an alloy comprising one of the following substances copper, aluminum, steel, gold, platinum, silver , for example a silver conductive paste, copper paste,
  • a metal oxide for example indium tin oxide, and / or an organic electrically conductive substance, for example an organic conductive polymer;
  • graphite graphite, graphene, carbon nanotubes or the like.
  • the contact area may have a thickness in a range of about 100 nm to about 5 mm, for example, from about 1 ym to about 250 ym.
  • the contact surface may have a depth and / or width in a range of approximately
  • the contact surface as a
  • Heat distribution layer may be formed or set up.
  • the contact surface can be set up to heat-dissipate the optoelectronic component
  • the barrier thin film may comprise or be formed from a silver conductive paste, wherein the silver conductive paste may have a structured surface, for example lamellar.
  • the electrical connection of the contact surface with the electrode may have a contact pad and / or a wire bond.
  • Electrode be connected conclusively.
  • the contact surface may have at least two contact surfaces, wherein the at least two
  • Contact surfaces have the same electrical potential and are at least partially separated from each other spatially.
  • the optoelectronic component can be set up to provide electromagnetic radiation, for example as an organic light-emitting diode.
  • the optoelectronic component can be set up to receive electromagnetic radiation, for example as an organic solar cell.
  • the method comprising: forming an electrode in an optically active region of the
  • optoelectronic component Forming an optically inactive region; and forming a contact surface as an electrical contact of the optoelectronic
  • the contact surface is electrically connected to the electrode; wherein a part of the contact surface is formed in the optically active region and a part of the contact surface is formed in the optically inactive region; wherein the contact surface at least partially surrounds the electrode; and wherein the proportion of the contact area in the optically inactive area is smaller than in the optically active area.
  • the optically active region can be used for receiving and / or providing
  • the optically inactive region can be formed into an electrical contacting and / or conclusive fixing of the optoelectronic component.
  • at least part of the contact surface may be on or above the electrode
  • the optically active region may have at least one optically active side and at least one optically inactive side.
  • At least part of the contact surface may be formed on or above the optically inactive side of the optically active region.
  • a second contact surface and a second electrode may further be formed, wherein the second contact surface with the second
  • Electrode electrical is connected.
  • a dielectric structure can be formed between the first contact area and the second contact area, which electrically isolates the first contact area from the second contact area.
  • the dielectric structure may simultaneously during the formation of the first
  • Contact surface and the second contact surface are formed by means of a shadow mask process, for example with air as a dielectric, i.
  • the first contact surface and the second contact surface may, for example, be materially identical but spatially separated regions of a layer.
  • the dielectric structure may be formed such that the
  • Protected breakdown and / or overvoltage for example, as a spark gap, a varistor or a protective diode.
  • a substance or mixture of substances can be formed, for example applied or deposited, with a higher or lower dielectric constant than air.
  • a varistor, a spark gap and / or a protective diode can be formed in the dielectric structure.
  • the formation of the optically active region may include forming an electrically active region which is connected to a
  • Barrier thin film is surrounded, wherein at least a part of the contact surface is formed on or above the barrier thin film, for example in a physical
  • Barrier thin film and the dielectric structure are formed and arranged relative to each other, that an electrical breakdown is derived by the dielectric structure.
  • the formation of the contact surface may further include forming a scattering layer
  • the electromagnetic radiation provided from the optically active region or picked up by the optically active region is laterally provided in the optically inactive region or can be absorbed by the optically inactive region.
  • the contact surface as a mechanical protection of the barrier thin film be formed, for example, the contact surface may comprise an electrically conductive elastomer or be formed therefrom.
  • the first electrically conductive elastomer or be formed therefrom.
  • a silver conductive paste for example, a silver conductive paste, copper paste,
  • Aluminum paste, steel paste, gold paste, or platinum paste
  • a metal oxide for example indium tin oxide, and / or an organic electrically conductive substance, for example an organic conductive polymer;
  • graphite graphite, graphene, carbon nanotubes or the like.
  • the substance or the substance mixture of the contact surface can be set up such that the contact surface can be formed by a method, for example wet-chemically from a solution,
  • Suspension, dispension or paste which has a process temperature less than about 150 ° C, for example, less than about 120 ° C, for example, less than about 90 ° C,.
  • the contact surface may be formed in a thickness in a range of about 100 nm to about 5 mm, for example
  • the contact surface may have a depth and / or width in a range of approximately
  • Contact surface are formed as a heat distribution layer.
  • the contact surface with the electrode can be connected conclusively.
  • the formation of the contact surface can form at least two
  • Contact surfaces have the same electrical potential and at least partially separated from each other spatially
  • the two or more contact surfaces of the contact surface may each be formed simultaneously or sequentially.
  • Optoelectronic component for providing
  • an organic light emitting diode for example as an organic light emitting diode.
  • an organic solar cell for example as an organic solar cell.
  • Figure 1 is a schematic cross-sectional view of a
  • Figure 2 is a schematic cross-sectional view of a
  • Figure 3 is a schematic cross-sectional view of a
  • Fig.l shows a schematic cross-sectional view of an optoelectronic component, according to various
  • a first electrode 110 which is formed on or above a carrier 102.
  • an organic functional On or above the first electrode 110 is an organic functional
  • Layer structure 112 is formed. About or on the
  • a second electrode 114 is formed.
  • the second electrode 114 is electrically insulated from the first electrode 110 by means of electrical insulation 104.
  • the second electrode 114 may be physically and electrically connected to a contact pad 106.
  • the contact pad 106 may be formed in the geometric edge area of the carrier 102 on or above the carrier 102, for example laterally next to the first electrode 110.
  • the contact pad 106 is electrically insulated from the first one by means of a further electrical insulation 104
  • Electrode 110 isolated. On or above the second electrode 114, a barrier thin film 108 is disposed such that the second electrode 114, the electrical insulations 104, and the organic functional layer structure 112 are surrounded by the barrier thin film 108, that is, in FIG.
  • barrier thin layer 108 Connection of barrier thin layer 108 with the carrier 102 are included.
  • the barrier film 108 can hermetically seal the trapped layers from harmful environmental influences. On or above the
  • Barrier thin film 108, a first contact surface 116 and a second contact surface 118 may be formed such that the first contact surface 116 of the second
  • Structure 122 is electrically isolated, the first contact surface 116 is electrically connected to the first electrode 110 and the second contact surface 118 is electrically connected to the contact pad 106.
  • the first contact surface 116 is electrically connected to the first electrode 110 and the second contact surface 118 is electrically connected to the contact pad 106.
  • Contact surface 116 and second contact surface 118 may be formed such that electrical contact of first electrode 110 and second electrode 114 may be realized on or above barrier thin film 108. Between the first contact surface 116 and the second
  • Contact area 118 is the dielectric structure 122
  • Width 120 may have a width in a range of about 0.5 mm to about 1 mm.
  • the region of the optoelectronic component 100 having an organic functional layer structure 112 on or above the carrier 102 may be designated as the optically active region 126.
  • an optically inactive region 128 Approximately the region of the optoelectronic component 100 without organic functional layer structure 112 on or above the carrier 102 can be designated as an optically inactive region 128.
  • An optoelectronic component 100 which is transparent, for example a transparent one
  • Carrier 102 transparent electrodes 110, 114 and a
  • transparent barrier thin film 108 may
  • device 100 can also only one optically active Side and have an optically inactive side, for example, in an optoelectronic device 100, which is configured as a top emitter or bottom emitter, for example by the second electrode 100 or the
  • Barrier thin layer 108 is formed reflective of provided electromagnetic radiation.
  • the carrier 102, the first electrode 110, the organic functional layer structure 112, the second electrode 114 and the barrier thin-film layer 108 may, for example, according to one of the embodiment of the descriptions of FIG.
  • the electrical insulation 104 may be configured such that a current flow between two electrically
  • the substance or the substance mixture of the electrical insulation can be, for example, a coating or a coating agent, for example a polymer and / or a lacquer.
  • the lacquer may, for example, have a coating substance which can be applied in liquid or in powder form,
  • the electrical insulation 104 can be applied or formed, for example by means of a printing process, for example structured.
  • the printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing.
  • the contact pad 106 may comprise as a substance or mixture of substances a substance or a mixture of substances similar to the second electrode 114 according to one of the embodiments of the descriptions of FIG. 2 or be formed therefrom
  • the first contact surface 116 and the second contact surface 118 may comprise or form a fabric as a substance which has a high electrical conductivity, for example a metal, for example copper, aluminum, steel, silver, gold, platinum or the like.
  • a metal for example copper, aluminum, steel, silver, gold, platinum or the like.
  • Contact surfaces may be formed on or above the barrier thin film 108, for example, one, two (shown), three, four or more.
  • Barrier thin-film 108 may, for example, be made wider and / or thicker in area than conventional, lithographically produced contact surfaces in FIGS
  • a cover for example a glass cover, for example, can be applied on or above the barrier thin-film layer 108
  • Cavity glass, a metal cover or a sealed plastic cover is formed from
  • the cover may, for example, be adhered to the barrier thin layer 108 with an adhesive, for example by lamination.
  • a cover for example of glass, for example by means of a frit bonding (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric edge regions of the organic, optoelectronic
  • Component with barrier thin layer 108 be applied.
  • the contact surfaces 116, 118 may be formed on or over the cover.
  • Contact surfaces 116, 118 on or above the cover can be the contact points, such as the contact point 124 of second electrode 114, as transition points from the edge contact surfaces, for example, the contact pad 106, to the flat contact surfaces, for example, the second
  • the contact points 124 according to various embodiments, for example, in a bonding process of
  • Component 100 can be formed.
  • the contact surfaces 116, 118 may, for example, as a conductive silver layer in a
  • Ink jet method may be formed, for example, after forming the barrier thin film 108 on or over the optoelectronic device or after forming the cover on or above the barrier thin film 108th
  • Conductive mixture of the contact surfaces 116, 118 may have a formable state for the formation, for example for the ink jet method, for example, be dissolved in a solution, dispersion or suspension.
  • Contact surfaces 116, 118 may be solidified after being applied to or over the barrier thin film 108,
  • the contact surfaces 116, 118 may have a thickness in the range of a few micrometers to a few millimeters, for example in one
  • the first contact surface 116 may in one embodiment have the same material composition as the second contact surface 118.
  • the contact surfaces 116, 118 may be formed by means of a mask process
  • Substance mixture of the contact surfaces 116, 118 can prevent.
  • the contact surfaces 116, 118 can be formed simultaneously, wherein the spatial and electrical separation of the contact surfaces 116, 118 is formed by means of a shadow mask, in which in the area 122 between the contact surfaces 116, 118 no electrical
  • the shadow mask should be arranged such that the mask edges in the region of the dielectric structure 122 do not cause any mechanical damage to the optically active region 126, for example by no physical
  • the thickness of the contact surfaces 116, 118 may have a thickness in the range from a few tens of nanometers to a few tens of micrometers, for example approximately 200 nm.
  • lithographically generated Contact points 124 can take place during or after the formation of the contact surfaces 116, 118, for example by means of cutting contacts, clamping contacts, laser ablation of a
  • electrically conductive adhesive anisotropic conductive film bonding - ACF bonding
  • electrically conductive adhesive anisotropic conductive film bonding - ACF bonding
  • Friction welding process (ultrasonic bonding).
  • a laser ablation can also be understood as a ballistic exposure of the areas to be exposed by means of photons. Further ballistic methods can be a bombardment of the dielectric structure 122 or of the to be exposed
  • photon bombardment such as laser ablation
  • a laser having a wavelength in a range of about 200 nm to about 1700 nm, for example, focused, for example, with a focus diameter in a range of about 10 ym to about 2000 ym. for example, pulsed,
  • a pulse duration in a range of about 100 fs to about 0.5 ms, for example with a power of about 50 mW to about 1000 mW,
  • Section 200 are described in various embodiments in Figure 2.
  • FIG. 2 shows a schematic cross-sectional view of an optoelectronic component, according to various aspects
  • Section 200 of Fig.l described.
  • Component for example, an electronic component providing electromagnetic radiation, for example a light-emitting component, for example in the form of an organic light-emitting diode, may have a carrier 102.
  • the carrier 102 may be used, for example, as a support for electronic elements or layers, for example
  • the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Further, the carrier 102 may be a
  • the plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or
  • the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),
  • PVC polyvinyl chloride
  • PS polystyrene
  • PC polycarbonate
  • the carrier 102 may be one or more of the above
  • the carrier 102 may include or be formed from a metal or metal compound, such as copper, silver, gold, platinum, or the like.
  • a carrier 102 comprising a metal or a
  • Metal compound may also be formed as a metal foil or a metal-coated foil.
  • the carrier 102 may be translucent or even transparent.
  • the term "translucent” or “translucent layer” can be understood in various embodiments that a layer is permeable to light,
  • the light generated by the light emitting device for example one or more
  • Wavelength ranges for example, for light in one
  • Wavelength range of the visible light for example, at least in a partial region of the wavelength range of 380 nm to 780 nm.
  • the term "translucent layer” in various embodiments is to be understood to mean that substantially all of them are in one
  • Quantity of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered in this case
  • transparent or “transparent layer” can be understood in various embodiments that a layer is transparent to light
  • Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.
  • Embodiments as a special case of "translucent" to look at.
  • the optically translucent layer structure at least in a partial region of the wavelength range of the desired monochrome light or for the limited
  • Emission spectrum is translucent.
  • the organic light-emitting diode or the light-emitting components according to the above or hereinafter described
  • Embodiments may be configured as a so-called top and bottom emitter.
  • a top and / or bottom emitter can also be used as an optically transparent component,
  • a transparent organic light emitting diode For example, a transparent organic light emitting diode, be designated.
  • the carrier 102 On or above the carrier 102 may be in different
  • Embodiments optionally be arranged a barrier layer 204.
  • the barrier layer 204 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,
  • Indium zinc oxide aluminum-doped zinc oxide, as well
  • Barrier layer 204 in various embodiments have a layer thickness in a range of about
  • 0.1 nm (one atomic layer) to about 5000 nm for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm.
  • an electrically active region 206 of the light-emitting component may be arranged on or above the barrier layer 204.
  • the electrically active region 206 can be understood as the region of the light-emitting component in which an electric current flows for the operation of the light-emitting component.
  • the electrically active region 206 may comprise a first electrode 110, a second electrode 114 and an organic functional layer structure 112, as will be explained in more detail below.
  • the first electrode 110 eg, in the form of a first
  • Electrode layer 110 may be applied.
  • the first electrode 110 (hereinafter also referred to as lower electrode 110) may be formed of or be made of an electrically conductive substance, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs.
  • Transparent conductive oxides are transparent, conductive substances, for example
  • Metal oxides such as zinc oxide, tin oxide,
  • binary metal oxygen compounds such as, for example, ZnO, SnO 2, or ⁇ 2 O 3
  • ternary metal oxygen compounds, such as AlZnO include
  • Zn2SnO4 CdSnO3, ZnSnO3, Mgln204, GalnO3, Zn2In20s or
  • TCOs do not necessarily correspond to one
  • stoichiometric composition and may also be p-doped or n-doped.
  • Electrode 110 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds,
  • Electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one
  • ITO indium tin oxide
  • Electrode 110 one or more of the following substances
  • networks of metallic nanowires and particles for example of Ag
  • networks of carbon nanotubes for example of Ag
  • Graphene particles and layers Networks of semiconducting nanowires.
  • the first electrode 110 may be electrically conductive
  • Electrode 110 and the carrier 102 may be translucent or transparent.
  • the first electrode 110 comprises or is formed from a metal
  • the first electrode 110 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one
  • the first electrode 110 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm
  • the first electrode 110 a the first electrode 110 a
  • Layer thickness in a range of about 10 nm to about 25 nm for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.
  • the first electrode 110 may have a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness of a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of
  • the first electrode 110 is made of, for example, a network of metallic nanowires, for example of Ag, those with conductive polymers
  • the first electrode 110 may be combined, a network of carbon nanotubes, which may be combined with conductive polymers, or formed of graphene layers and composites, the first electrode 110, for example one
  • Layer thickness in a range of about 1 nm to about 500 nm for example, a layer thickness in a range of about 10 nm to about 400 nm,
  • the first electrode 110 can be used as the anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode that is as an electron-injecting electrode.
  • the first electrode 110 may be a first electrical
  • the first electrical potential may be applied to the carrier 102 and then indirectly applied to the first electrode 110.
  • the first electrical potential may be, for example, the ground potential or another predetermined reference potential.
  • the light emitting device have an organic functional layer structure 112 which is applied or formed on or above the first electrode 110.
  • the first electrode 110 may, for example by sputtering, for example, DC sputtering, physical
  • PVD Gas phase deposition
  • the organic functional layer structure 112 may comprise one or more emitter layers 218, for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers 216 (also referred to as hole transport layer (s) 220).
  • emitter layers 218, for example with fluorescent and / or phosphorescent emitters and one or more hole line layers 216 (also referred to as hole transport layer (s) 220).
  • hole transport layer (s) 220 also referred to as hole transport layer (s) 220.
  • one or more electron conduction layers 216 may be provided.
  • organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent
  • non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can
  • Polymer emitter are used, which in particular by means of a wet-chemical method, such as a Spin-on method (also referred to as spin coating), can be deposited.
  • a wet-chemical method such as a Spin-on method (also referred to as spin coating)
  • spin coating also referred to as spin coating
  • the emitter materials may be suitably embedded in a matrix material.
  • Emitter materials are also provided in other embodiments.
  • the light emitting device may be selected such that the light emitting device
  • the emitter layer (s) 218 may include a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)
  • the emitter layer (s) 218 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 218 or blue
  • phosphorescent emitter layer 218 By mixing the different colors, the emission of light can result in a white color impression.
  • a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.
  • the organic functional layer structure 112 may generally include one or more electroluminescent layers.
  • the one or more electroluminescent layers may generally include one or more electroluminescent
  • Layers may or may not be organic polymers, organic oligomers, organic monomers, organic small, non-organic
  • the organic functional layer structure 112 may include one or more
  • Hole transport layer 220 is or are, so that, for example, in the case of an OLED an effective
  • the organic functional layer structure 112 may include one or more functional layers, which may be referred to as a
  • Electron transport layer 216 is executed or are, so that, for example, in an OLED an effective
  • Electron injection into an electroluminescent layer or an electroluminescent region is made possible.
  • As a substance for the hole transport layer 220 can be any substance for the hole transport layer 220 .
  • the one or more electroluminescent layers may or may not be referred to as
  • Hole transport layer 220 may be deposited on or over the first electrode 110, for example, deposited, and the emitter layer 218 may be on or above the
  • Hole transport layer 220 may be applied, for example, be deposited.
  • electron transport layer 216 may be deposited on or over the emitter layer 218, for example, deposited.
  • the organic functional layer structure 112 ie, for example, the sum of the thicknesses of hole transport layer (s) 220 and
  • Emitter layer (s) 218 and electron transport layer (s) 216) have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most approximately 1.2 ⁇ m, for example a layer thickness of at most approximately 1 ⁇ m, for example a layer thickness of approximately approximately 800 nm, for example a layer thickness of approximately 500 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of at most about 300 nm.
  • the organic functional layer structure 112 may include, for example, a
  • each OLED may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of about 800 or more nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.
  • the organic functional layer structure 112 may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of about 800 or more nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.
  • the organic functional layer structure 112 may for example have a layer thickness of at most about 1.5
  • organic functional layer structure 112 may have a layer thickness of at most about 3 ym.
  • the light-emitting component may generally comprise further organic functional layers, for example
  • Electron transport layer (s) 216 which serve to further improve the functionality and thus the efficiency of the light-emitting device.
  • organic functional layer structure 112 On or above the organic functional layer structure 112 or optionally on or above the one or more further organic functional layers
  • Layer structures may be the second electrode 114 (for example in the form of a second electrode layer 114) may be applied.
  • Electrode 114 have the same substances or be formed from it as the first electrode 110, wherein in
  • metals are particularly suitable.
  • the second metal is particularly suitable.
  • the second metal is particularly suitable.
  • the second metal is particularly suitable.
  • Electrode 114 (for example, in the case of a metallic second electrode 114), for example, have a layer thickness of less than or equal to about 50 nm,
  • a layer thickness of less than or equal to approximately 45 nm for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,
  • a layer thickness of less than or equal to about 25 nm for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.
  • the second electrode 114 may be general be formed or be similar to the first electrode 110, or different to this.
  • the second electrode 114 may be formed of one or more of the materials and with the respective layer thickness in various embodiments, as described above in connection with the first electrode 110. In different
  • the first electrode 110 and the second electrode 114 are both formed translucent or transparent.
  • the illustrated in Fig.2 the illustrated in Fig.2
  • the second electrode 114 can be used as the anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode that is as an electron-injecting electrode.
  • the second electrode 114 may have a second electrical connection to which a second electrical connection
  • the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.
  • the second electrode 114 may, for example, by means of
  • PVD physical vapor deposition
  • the first electrode 110 and the second electrode 114 can each also, for example, have partial layers that are alternative or in addition to the metals mentioned
  • chromium and molybdenum may have.
  • Examples of possible layer sequences in one or more sub-layer-containing electrodes are Mo-Al-Mo, Cr-Al-Cr, Cr-Cu-Cr and Cr-Cu.
  • the second electrode 114 and thus on or above the electrically active region 206 may optionally be an encapsulation 108, for example in the form of a
  • Barrier thin film / thin film encapsulation 108 are formed or be.
  • a "barrier thin film” 108 or a “barrier thin film” 108 can be understood as meaning, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form.
  • the barrier film 108 is formed to be resistant to OLED damaging materials such as
  • Water, oxygen or solvents can not or at most be penetrated to very small proportions.
  • the barrier thin-film layer 108 may be formed as a single layer (in other words, as
  • the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another.
  • the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another.
  • Barrier thin film 108 as a stack of layers (stack)
  • the barrier film 108 or one or more sublayers of the barrier film 108 may be formed by, for example, a suitable deposition process, e.g. by means of a
  • Atomic Layer Deposition e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless
  • PECVD plasma enhanced chemical vapor deposition
  • plasmaless vapor deposition plasmaless vapor deposition
  • PLCVD Chemical Vapor Deposition
  • ALD atomic layer deposition process
  • Barrier thin film 108 having multiple sub-layers, all sub-layers are formed by an atomic layer deposition process.
  • a layer sequence comprising only ALD layers may also be referred to as "nanolaminate".
  • Barrier thin film 108 having a plurality of sublayers, one or more sublayers of the barrier thin film 108 by a deposition method other than one
  • Atomic layer deposition processes are deposited
  • the barrier film 108 may, in one embodiment, have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to a
  • Embodiment for example, about 40 nm according to an embodiment.
  • all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another
  • Barrier thin layer 108 have different layer thicknesses. In other words, at least one of
  • Partial layers have a different layer thickness than one or more other of the sub-layers.
  • the barrier thin-film layer 108 or the individual partial layers of the barrier thin-film layer 108 may, according to one embodiment, be formed as a translucent or transparent layer.
  • the barrier film 108 (or the individual sub-layers of the barrier film 108) may be made of a translucent or transparent substance (or mixture that is translucent or transparent).
  • the barrier thin-film layer 108 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the
  • Barrier thin layer 108 include or may be formed from any of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum ⁇ doped zinc oxide, and mixtures and alloys
  • Layer stack with a plurality of sub-layers one or more of the sub-layers of the barrier layer 108 have one or more high-index materials, in other words, one or more high-level materials
  • Refractive index for example with a refractive index of at least 2.
  • an adhesive and / or a protective lacquer may be provided on or above the barrier thin layer 108, by means of which, for example, a cover (for example a cover) may be provided
  • the optically translucent layer of adhesive and / or protective lacquer may have a layer thickness of greater than 1 ⁇ m, for example a layer thickness of several ⁇ m.
  • the adhesive may include or be a lamination adhesive. In the layer of the adhesive (also referred to as
  • Adhesive layer can be embedded in various embodiments still light scattering particles, which contribute to a further improvement of the color angle distortion and the
  • Exemplary embodiments may be provided as light-scattering particles, for example, dielectric scattering particles such as, for example, metal oxides such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide ( Ga20 a )
  • dielectric scattering particles such as, for example, metal oxides such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide ( Ga20 a )
  • Alumina, or titania may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres.
  • metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.
  • an electrically insulating layer (not shown) may be applied or be, for example SiN, for example with a layer thickness in a range from approximately 300 nm to approximately 1, 5 ym, for example, with a layer thickness in a range of about 500 nm to about 1 ym to protect electrically unstable materials, for example, during a wet chemical process.
  • the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index
  • Such an adhesive may be, for example, a low-refractive adhesive such as a
  • an adhesive may be a high refractive index adhesive having refractive index non-diffusing particles and having an average refractive index approximately equal to the average refractive index of the organically functional layered structure, for example in a range of about 1.7 to about 2.0.
  • a plurality of different adhesives may be provided which form an adhesive layer sequence.
  • plasma spraying may be applied to the barrier film 108.
  • the / may
  • Cover and / or the adhesive has a refractive index
  • the cover for example made of glass, for example by means of a frit bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic device 100 with the barrier layer 108 applied become.
  • optically inactive contact surfaces of an optoelectronic component are provided with which it is possible to optically inactive contact surfaces of an optoelectronic component out.
  • optoelectronic components for example an OLED luminaire
  • the non-luminous edge can be reduced.
  • the ratio of optically active surface to optically inactive surface can be improved.
  • Optoelectronic components such as OLED modules
  • the optically inactive area such as the dark strip (cat walk) between the OLED modules can be reduced thereby.
  • the optically active area of an optoelectronic component on the substrate can be increased, i.
  • the substrate can be better used for specific applications.
  • Contact surfaces are used for defect analysis of the thin-film encapsulation. Furthermore, the contact surfaces according to various
  • Embodiments for heat distribution for example for
  • Embodiments for example, an electric
  • Protection against electrostatic discharges are formed, for example, a spark gap, a varistor or a protective diode.
  • Embodiments the surface for electrically contacting the enlarge optoelectronic component and thus simplify the electrical contact.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dans divers exemples de réalisation d'un composant optoélectronique (100) selon l'invention, le composant optoélectronique (100) comprend une zone optiquement active (126), une zone optiquement inactive (128) et une surface de contact (116, 118), la surface de contact (116, 118) faisant fonction de contact électrique du composant optoélectronique (100), la zone optiquement active (126) comprenant une électrode (110, 114), la surface de contact (116, 118) étant reliée électriquement à l'électrode (110, 114), une partie de la surface de contact (116, 118) étant placée dans la zone optiquement active (126) et une partie de la surface de contact (116, 118) étant placée dans la zone optiquement inactive (128), la surface de contact (116, 118) entourant au moins partiellement l'électrode (110, 114) et la proportion de la surface de contact (116, 118) étant plus petite dans la zone optiquement inactive (128) que dans la zone optiquement active (126).
PCT/EP2013/069841 2012-09-27 2013-09-24 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique WO2014048917A1 (fr)

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Cited By (1)

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US10454057B2 (en) 2015-02-23 2019-10-22 Osram Oled Gmbh Optoelectronic component and method for producing an optoelectronic component

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DE102004041371B4 (de) * 2004-08-25 2007-08-02 Novaled Ag Bauelement auf Basis einer organischen Leuchtdiodeneinrichtung und Verfahren zur Herstellung
DE102008049777A1 (de) * 2008-05-23 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
EP2394312B1 (fr) * 2009-02-05 2019-05-08 Philips Intellectual Property & Standards GmbH Dispositif électroluminescent
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