WO2014207039A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2014207039A1
WO2014207039A1 PCT/EP2014/063385 EP2014063385W WO2014207039A1 WO 2014207039 A1 WO2014207039 A1 WO 2014207039A1 EP 2014063385 W EP2014063385 W EP 2014063385W WO 2014207039 A1 WO2014207039 A1 WO 2014207039A1
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WO
WIPO (PCT)
Prior art keywords
layer
support structure
electrode
electrically
active region
Prior art date
Application number
PCT/EP2014/063385
Other languages
German (de)
English (en)
Inventor
Richard Baisl
Christoph KEFES
Michael Popp
Original Assignee
Osram Oled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2014207039A1 publication Critical patent/WO2014207039A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED

Definitions

  • An organic optoelectronic device may have an anode 604 and a cathode 608 with an organic functional
  • the organic functional layer system 606 may be one or more
  • Emitterschient / s (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown) each of two or more charge generating layer (CGL) generating layers Charge carrier pair generation, and one or more
  • Electron block layers also referred to as hole transport layer (s) (HTL)
  • HTL hole transport layer
  • hole block layers also referred to as hole block layers
  • Electron transport layer (s) ("electron transport layer” - ETL) to direct current flow
  • Organic-based devices such as organic light emitting diodes (organic light emitting diode - OLED), are finding widespread use in general lighting, for example as surface light sources.
  • An organic optoelectronic device conventionally comprises: a first electrode 604 formed on or above a carrier 602. On or above the first electrode 604 is an organic functional layer structure 606
  • a second electrode 608 Over or on the organic functional layer structure 606 is a second electrode 608
  • the second electrode 608 is by means of a electrical insulation 610 from the first electrode 604 electrically isolated.
  • the electrical insulation 610 is configured such that current flow between the first electrode 604 and the second electrode 608 is prevented.
  • the second electrode 608 is physically and electrically connected to a second contact pad 614 and the first electrode 604 is connected to a first contact pad 612.
  • organic constituents of organic components for example organic optoelectronic components, for example an organic light emitting diode (OLED), are often prone to
  • a harmful environmental impact may be a harmful substance to organic substances or organic substances
  • the hermetic shielding of organic optoelectronic surface light sources is important to a storage life, for example of 10 years, or a lifetime in operation, for example of more than 10,000 hours for the optoelectronic
  • a component with a hermetically sealed encapsulation with respect to the harmful environmental influence can be surrounded by harmful environmental influences, for example one
  • the encapsulation requires permeability values for water and / or oxygen of less than 10 g / cm / d.
  • Organic optoelectronic device are therefore
  • Fig. 7a shows a conventional method for encapsulating an optoelectronic device 600. On the second
  • a barrier thin film 700 is formed such that the second electrode 608, the electric
  • Layer structure 606 is surrounded by the barrier film 616. Furthermore, an adhesive layer 706 is applied to a cover 704.
  • the cover 704 is, for example, a laminating glass 704 or a film 704, and the adhesive is an epoxy adhesive.
  • the cover 704 with adhesive layer 706 is then applied to the barrier film 702 (shown in Fig. 7a). As a result, an encapsulated optoelectronic component with a
  • Fig. 7b shows another conventional method for
  • Getter 710 applied and applied in the edge region of the cover 702, a lateral adhesive layer 708.
  • Getter 710 is then applied to the optoelectronic device 600, for example to the contact pads 612, 614 (shown in Fig. 7b). This will be a conventional
  • Cavity glass encapsulation 712 formed.
  • Device 600 having a conventional encapsulation structure 706 with barrier film 702 and cover 704; and an optoelectronic device 600 having a
  • Cavity glass encapsulation 712 may be susceptible to failure, for example with respect to the adhesive,
  • Cover 704 acts, such as a protective glass 704 or a lamination glass 704;
  • a particle contamination 802 may be pushed into the organic functional layers of the OLED. This can lead to a short circuit and / or create latent heat spots. Heat points could be considered
  • Late succession results in spontaneous failures.
  • Mechanically flexible components may have a higher susceptibility to error due to the possibility of curvature.
  • the adhesive layer 704 has a conventional thickness in a range of 10 ⁇ to 100 ⁇ .
  • the adhesive layer 704 is not conventionally homogeneous in thickness but has nonuniformity.
  • this non-uniformity of the adhesive layer 704 may be on the side of the cover the adhesive layer 704 interference fringes arise. These interference fringes can be annoying with regard to the visual appearance in the case of transparent optoelectronic components 600.
  • An optoelectronic component comprising: an electrically active region having an optically active region and an optically inactive region; wherein the electrically active region comprises at least one electrical bus bar formed in the optically active region; an encapsulation structure on or above the electrically active region; wherein the encapsulation structure has a support structure on or above the electrical bus bar in the optically active region.
  • the optoelectronic component can be designed as an organic light-emitting diode.
  • the optoelectronic component may be formed as an organic solar cell
  • the electrically active region may have an electrically functional structure, wherein the electrically functional structure has an organic functional layer structure between a first electrode and a second electrode.
  • the organic functional group is organic functional
  • Layer structure to emit electromagnetic Be formed radiation from a provided electrical energy and / or for generating an electrical energy from an absorbed electromagnetic radiation
  • the organic functional group is organic functional
  • Layer structure may be formed at least partially in the optically active region.
  • the electric Samaritan rail may be connected to the first electrode or to the second electrode
  • the optoelectronic component may further comprise a first contact pad and a second contact pad, wherein the first contact pad with the first
  • Electrode and the second contact pad can be electrically coupled to the second electrode.
  • the first electrode, the second electrode, the electrical busbar, the first contact pad and / or the second contact pad may at least
  • the electrical busbar may be formed in the optically active region such that the electrical busbar is at least partially on or over a portion of the organic functional
  • Layer structure is formed and / or wherein at least a portion of the organic functional layer structure is formed on or above the electrical busbar.
  • the optoelectronic component may have a first electrical busbar and at least one second electrical busbar, wherein the first electrical busbar is electrically coupled to the first electrode and the at least one second electrical busbar is electrically coupled to the second electrode.
  • the support structure may be formed as a second busbar.
  • the encapsulation structure may have a cover.
  • the cover may be hermetically sealed with respect to water and / or oxygen.
  • the cover may be formed as a film.
  • the cover may be as a
  • the encapsulation structure may be formed as a thin layer or have a thin layer that is hermetically sealed with respect to water and / or oxygen.
  • the encapsulation structure can be at least the areal dimension of the optically active
  • the cover can be conclusively connected to the electrically functional structure
  • connection of the cover to the electrically functional structure may be hermetically sealed with respect to water and / or oxygen.
  • the cover may be connected to the electrically functional structure at least partially in the optically inactive region.
  • at least one support structure may comprise a substance or a substance mixture which / which
  • At least one support structure may comprise or be formed from one of the following materials: a metal, a metal oxide, a ceramic, a
  • At least one support structure may comprise or be formed from a eutectic substance.
  • At least one support structure may comprise or be formed from one or more of the following materials: gallium, indium, tin, chromium, molybdenum, gold, silver and / or aluminum.
  • At least one support structure an adhesive, a plastic and / or a paint
  • the optoelectronic component can have a first support structure and at least one second support structure
  • the cover can be connected to the electrically functional structure by means of a second support structure and / or a third support structure.
  • the cover with the electrically functional structure in such a way by means of another
  • Support structure connected to that with the first
  • Support structure and the other support structure at least one cavity between the cover and the electric
  • the first support structure and the at least one second support structure may be formed such that the distance of the cover to the electrically functional structure is greater than the thickness of the electrically functional structure.
  • the cavity may at least partially comprise or be filled with a gas or gas mixture.
  • Cover be formed in the cavity and / or on the electrically active structure.
  • the support structure may be the
  • Support structure mechanically interconnect the cover and the electrically functional structure.
  • the support structure may be formed as a conclusive connection of the electrically functional structure with the cover, for example as a cohesive connection.
  • At least one functional layer may be formed on the cover in the cavity.
  • the functional layer may include
  • the getter may comprise or be formed from a zeolite.
  • the functional layer is a functional layer
  • the functional layer may be formed as a bar ieren Medntik. In one embodiment, the functional layer may be formed as an anti-adhesion layer with respect to water.
  • the functional layer may be formed as an anti-adhesion layer with respect to a substance or substance mixture of the at least one support structure.
  • the functional layer may be formed as a coupling-in layer or a coupling-out layer with respect to electromagnetic radiation which is emitted or absorbed by the optoelectronic component.
  • the functional layer may be formed as a UV protective layer.
  • the substance or the substance mixture of the functional layer may be elastic or viscoelastic.
  • the functional layer may have a higher compression modulus than the organic functional layer structure.
  • the functional layer may have a higher compression modulus than the electrically functional structure.
  • the functional layer may have a layer thickness which is smaller than the distance of the cover from the electrically functional structure.
  • the encapsulation structure may be formed as a barrier thin film and / or an ALD layer or LD layer or have such. In one embodiment, the encapsulation structure may be formed as a cavity encapsulation. In one embodiment, the support structure may have a width similar to the width of the electrical
  • Busbar is.
  • the support structure may be approximately congruent on or over the electrical busbar.
  • the support structure may be formed at least partially surrounded by the organic functional layer structure.
  • At least one support structure may be at least partially provided with at least one electrical
  • Busbar electrically coupled and / or mechanically connected.
  • Support structure may be formed adjacent to the first support structure.
  • Support structure may be formed over the first support structure.
  • Support structure with the first support structure electrically
  • Support structure to be formed.
  • a method for producing an optoelectronic component comprising: forming an electrically active region comprising an optically active region and an optically inactive region; wherein the electrically active region at least one electrical
  • Busbar is formed having formed, wherein the
  • Busbar is formed in the optically active region; Forming an encapsulation structure on or over the electrically active region; wherein the encapsulation structure with a support structure on or above the electrical
  • Busbar is formed in the optically active region.
  • Opto-electronic device can be formed as an organic light-emitting diode.
  • Opto-electronic device can be formed as an organic solar cell.
  • forming the electrically active region may include forming an electrically functional structure, wherein the electrically functional structure is an organic functional one
  • the organic functional layer structure may be used to emit electromagnetic radiation from a supplied electrical energy and / or to generate an electrical energy from an absorbed one
  • the organic functional layer structure can be formed at least partially in the optically active region.
  • the electrical busbar can be formed electrically coupled to the first electrode or to the second electrode.
  • the method may further include forming a first contact pad and a second contact pad, wherein the first contact pad with the first electrode and the second contact pad with the second electrode are formed electrically coupled.
  • Electrode the second electrode, the electrical
  • Busbar, the first contact pad and / or the second contact pad are at least partially formed in the optically inactive area.
  • the electrical busbar can be so in the optically active region
  • the electrical busbar is at least partially formed on or over a part of the organic functional layer structure and / or at least part of the organic functional layer structure is on or above the electrical
  • Busbar is formed.
  • the method may further comprise forming a first electrical busbar and at least one second electrical busbar,
  • electrical busbar with the first electrode and the at least one second electrical busbar are formed electrically coupled to the second electrode.
  • the support structure may be formed as a second busbar.
  • the formation of the encapsulation structure may include forming or applying a cover or may comprise applying a cover to or above the electrical functional structure.
  • the cover can be formed hermetically sealed with respect to water and / or oxygen. In one embodiment of the method, the cover can be formed as a film or be set up.
  • the cover may be configured as a glass cover, metal cover or plastic cover.
  • Encapsulation structure is formed as a thin film or forming a thin film, wherein the thin film is hermetically sealed with respect to water and / or oxygen is / is formed.
  • Encapsulation structure are formed having at least the areal dimension of the optically active region.
  • the cover can be conclusive with the electrically functional structure
  • connection of the cover to the electrically functional structure can be hermetically sealed with respect to water and / or oxygen.
  • the cover can be connected to the electrically functional structure at least partially in the optically inactive region conclusive.
  • at least one support structure may comprise a substance or a substance mixture which is hermetically sealed with respect to water and / or oxygen.
  • At least one support structure may comprise or be formed from one of the following materials: a metal, a metal oxide, a ceramic, a plastic.
  • At least one support structure may comprise or be formed from a eutectic substance.
  • At least one support structure can comprise or be formed from one or more of the following materials: gallium, indium, tin, chromium, molybdenum, gold, silver and / or aluminum.
  • At least one support structure may comprise or be formed from an adhesive, a plastic and / or a lacquer,
  • a resin for example, a resin, an epoxy, a polyacrylate.
  • the cover can be connected conclusively to the electrically functional structure by means of a second support structure and / or a third support structure.
  • the cover can be connected to the electrically functional structure by means of a further support structure in such a way that at least one cavity between the cover and the one with the first support structure and the further support structure
  • Support structure and the at least one second support structure are formed such that the distance of the cover to the electrically functional structure is greater than the thickness of the electrically functional structure.
  • the cavity can be at least partially filled with a gas or gas mixture.
  • the support structure may be formed on the cover in the cavity and / or on the electrically active structure. In one embodiment of the method, the support structure may mechanically connect the support structure to the cover and the electrically functional structure.
  • the support structure may be formed as a conclusive connection of the electrically functional structure with the cover, for example as a material connection.
  • At least one functional layer may be provided on the cover in the cavity
  • the functional layer can have a getter or be formed therefrom.
  • the getter may comprise or be formed from a zeolite.
  • the functional layer can be formed in this way . that the functional
  • the scattering centers can be formed as microlenses.
  • the functional layer may be formed as a barrier thin film.
  • the functional layer may be formed as a non-stick splint
  • the functional layer can be formed as an anti-adhesive layer
  • the functional layer can be formed as a coupling-in layer or a coupling-out layer with respect to electromagnetic radiation emitted by the optoelectronic component
  • the functional layer may be formed as a UV protection layer.
  • the substance or the substance mixture of the functional layer can be elastic or
  • the functional layer can be formed viscoelastic.
  • the functional layer can be formed such that the functional
  • the functional layer has a higher compression modulus than the organic functional layer structure.
  • the functional layer can be formed such that the functional layer has a layer thickness which is smaller than that Distance of the cover to the electrically functional
  • Encapsulation structure may be formed as a barrier thin film and / or an ALD layer or MLD layer or have such a.
  • the support structure may have a width which is similar to the width of the electrical busbar.
  • the support structure may be approximately congruent on or above the electrical
  • Busbar are formed.
  • the support structure may be formed such that the support structure is at least partially surrounded by the organic functional layer structure.
  • At least one support structure can at least partially be electrically coupled to at least one electrical busbar and / or mechanically connected.
  • the method may include forming a first support structure and at least one second support structure. In one embodiment of the method, at least one second support structure adjacent to the first support structure
  • At least one second support structure may be above the first support structure
  • At least one second support structure can be formed electrically and / or mechanically coupled to the first support structure.
  • At least one second support structure may be formed electrically insulated from the first support structure.
  • Figures 2a-b are schematic cross-sectional views
  • Figures 3a-b are schematic cross-sectional views
  • Figures 5a-c Schematic cross-sectional views
  • FIG. 6 shows schematic cross-sectional views of a
  • Figures 7a-b are schematic cross-sectional views of a
  • Figures 8a-b are schematic cross-sectional views of a
  • the electronic component can be understood, wherein the optoelectronic component has an optically active region.
  • the optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.
  • an optoelectronic component as an organic light emitting diode (OLED), an organic photovoltaic system, such as an organic solar cell, an organic sensor, an organic field effect transistor (OFET) and / or organic electronics be educated.
  • OLED organic light emitting diode
  • OFET organic field effect transistor
  • the organic field effect transistor may be an all-OFET in which all
  • Layers are organic.
  • An organic, electronic component may have an organic functional layer system, which is synonymously also referred to as an organic functional layer structure.
  • Functional layer structure may include or be formed from an organic substance or mixture of organic substances, for example, to provide electromagnetic radiation from a supplied electric current or to provide an electric current from a provided electromagnetic energy
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the electromagnetic Radiation emitting device for example, as a light emitting diode (LED) as an organic light emitting diode
  • OLED organic light-emitting diode
  • the light-emitting device may be formed organic light emitting transistor.
  • the light-emitting device may be in different colors
  • Embodiments be part of an integrated circuit. Furthermore, a plurality of light-emitting
  • an organic substance regardless of the respective state of aggregation, can be present in chemically uniform form
  • an organic-inorganic substance can be a
  • the term "substance” encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance
  • a mixture may be understood as meaning components of two or three components more different substances, whose
  • components are very finely divided.
  • a class of substances is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid
  • an adhesive may include or be formed from one of the following: a casein, a glutin, a starch, a cellulose, a resin, a tannin, a lignin, an organic matter
  • Metal oxide a silicate, a phosphate, a borate.
  • an adhesive may be used as a hot melt adhesive, for example, a solvent-containing
  • a polymerization adhesive for example, a cyanoacrylate adhesive, a methyl methacrylate adhesive, an anaerobic curing adhesive, an unsaturated polyester, a radiation curing adhesive
  • a polycondensation adhesive f for example, a phenol-formaldehyde resin adhesive, a silicone, a silane-crosslinking polymer adhesive
  • Polyimide adhesive for example an epoxy resin adhesive, a polyurethane adhesive, a silicone
  • Pressure-sensitive adhesive have or be formed from it.
  • Fig. La-d show schematic cross-sectional views
  • the optoelectronic component 140, 160 may be to a
  • the optoelectronic component 140, 160 is arranged an electrical energy to generate from a received electromagnetic radiation and / or to generate electromagnetic radiation from a provided electrical energy.
  • the optoelectronic component 140, 160 is arranged an electrical energy to generate from a received electromagnetic radiation and / or to generate electromagnetic radiation from a provided electrical energy.
  • Component may be formed as a light emitting device 140, 160, for example in the form of an organic light emitting diode 140, 160.
  • the organic light emitting diode 140, 160 (or the light emitting
  • a transparent top emitter or a
  • a top and / or bottom emitter can also be considered optically transparent or
  • translucent component for example, a transparent or translucent organic light-emitting diode 140, 160, be designated.
  • Optoelectronic component 140, 160 may be formed on or above a carrier 102.
  • the carrier 102 may be used, for example, as a support for electronic elements or layers, for example
  • the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Further, the carrier 102 may be a
  • the plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or
  • the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom.
  • the carrier 102 may be one or more of the above
  • the carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.
  • a carrier 102 comprising a metal or a
  • Metal compound may also be formed as a metal foil or a metal-coated foil.
  • the carrier 102 may be translucent or even transparent.
  • a metal in a carrier 102, a metal
  • the metal may be considered a thin one
  • Layer be transparent or translucent layer formed and / or the metal to be part of a mirror structure.
  • the carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way.
  • a carrier 102 having a mechanically rigid region and a mechanically flexible region may be patterned, for example by having the rigid region and the flexible region of different thickness.
  • a mechanically flexible carrier 102 or the mechanically flexible region may, for example, be a foil
  • the carrier 102 may be referred to as
  • Optoelectronic component 140, 160 may be formed, for example, be transparent or translucent with respect to the provided electromagnetic radiation of the optoelectronic component 140, 160. On or above the carrier 102 may be in different
  • the organic functional layer structure 106 may be arranged (not shown), for example, on the side of the organic functional layer structure 106 and / or on the side facing away from the organic functional layer structure 106.
  • the barrier layer may comprise or consist of one or more of the following substances: aluminum oxide,
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene
  • Barrier layer by means of an atomic layer deposition method (atomic layer deposition - ALD) and / or a
  • the barrier layer may have two or more identical and / or different layers, or layers,
  • the barrier layer may have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness in a range of about 10 nm to about 200 nm, for example a layer thickness of about 40 nm.
  • a further cover (not shown) may be provided on or above the barrier layer and / or the barrier layer may be formed as a further cover, for example as one
  • Cavity glass encapsulation In various embodiments, on or above the barrier layer (or, if the barrier layer is not
  • the first electrode 104 (for example in the form of a first electrode layer 104) to be applied.
  • the first electrode 104 (hereinafter also referred to as lower
  • Electrode 104) may be made of an electric
  • Conductive material can be formed or how
  • Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide,
  • binary metal oxygen compounds such as ZnO, Sn0 2 , or 1 ⁇ 0 3 also include ternary
  • Metal-oxygen compounds such as AIZnO, Z 2Sn0 4, CdSnO ß, ZnSnOs, Mgl 2 0 4, Galn0 3, Z ⁇ ⁇ Os Ir or
  • TCOs do not necessarily correspond to one
  • stoichiometric composition and may also be p-doped or n-doped.
  • Electrode 104 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Cr, Mo, Ca, Sm or Li, and
  • Electrode 104 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one Silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO ultrahigh-layer.
  • ITO indium tin oxide
  • Electrode 104 one or more of the following substances
  • networks of metallic nanowires and particles for example of Ag
  • Networks of carbon nanotubes for example of Ag
  • Graphene particles and layers for example of Graphene particles and layers
  • Networks of semiconducting nanowires for example of Ag
  • the first electrode 104 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.
  • Electrode 104 and the carrier 102 may be translucent or transparent.
  • the first electrode 104 may have a layer thickness of less than or equal to about 25 nm, for example one
  • the first electrode 104 may have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm
  • the first electrode 104 may have a layer thickness in a range of about 10 nm to about 25 nm, for example a layer thickness in a range of about 10 nm to about 18 nm, for example a layer thickness in a range of about 15 nm to about 18 nm Further, in the case where the first electrode 104 has or is formed of a conductive transparent oxide (TCO), the first electrode 104 may have a layer thickness in a range of about 10 nm, for example to about 100 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of TCO
  • TCO conductive transparent oxide
  • the first electrode 104 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes which may be combined with conductive polymers or of graphene may be used. Layers and composites are formed, the first electrode 104, for example a
  • Layer thickness in a range of about 1 nm to about 100 nm for example, a layer thickness in a range of about 10 nm to about 400 nm,
  • the first electrode 104 can be used as the anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode that is, as an electron-initiating electrode.
  • an organic functional layer structure 106 is shown.
  • the organic functional layer structure 106 may comprise one or more emitter layers (not shown), for example with fluorescent and / or
  • Hole line layers also referred to as
  • various embodiments may alternatively or additionally comprise one or more electron conduction layers (also referred to as electron transport layer (s))
  • electron conduction layers also referred to as electron transport layer (s)
  • the optoelectronic component 140, 160 can be used include organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2-, 5-substituted poly-p-phenylenevinylene) and metal complexes, for example
  • organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2-, 5-substituted poly-p-phenylenevinylene) and metal complexes, for example
  • Iridium complexes such as blue phosphorescent FIrPic
  • Molecular deposition process separable. It is also possible to use polymers which in particular can be deposited by means of a wet-chemical process, such as, for example, a spin-coating process (also referred to as spin coating).
  • the emitter materials may be suitably embedded in a matrix material.
  • Emitter materials are also provided in other embodiments.
  • Optoelectronic component 140, 160 may for example be selected so that the optoelectronic component 140, 160 emits white light.
  • the emitter layer (s) may also be composed of several sub-layers, such as a blue-fluorescent emitter layer or blue-phosphorescent emitter layer, a green-phosphorescent emitter layer and a red-phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided in the beam path through this
  • Layers generated primary emission to arrange a converter material that at least partially absorbs the primary radiation and emits a secondary radiation of different wavelength, so that from a (not yet white)
  • Primary radiation by the combination of primary radiation and secondary radiation gives a white color impression.
  • the organic functional layer structure 106 may generally include one or more electroluminescent layers.
  • the one or more electroluminescent layers may generally include one or more electroluminescent layers.
  • Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules, or a combination of these materials.
  • the organic functional layer structure 106 may include one or more
  • Hole transport layer is or are designed so that, for example, in the case of an OLED an effective
  • the organic functional layer structure 106 may include one or more functional layers, which may be referred to as a
  • Electron transport layer is or are designed so that, for example, in an OLED an effective
  • the electroluminescent layer may be carried out electroluminescent layer.
  • the electroluminescent layer may be carried out electroluminescent layer.
  • Hole transport layer may be applied to or over the first electrode 104, for example, deposited, and the
  • Emitter layer may be applied to or over the hole transport layer, for example deposited. In different embodiments you can
  • Electron transport layer applied to or over the emitter layer, for example deposited.
  • the organic functional layer structure 106 ie, for example, the sum of the thicknesses of hole transport layer (s) and
  • Emitter layer (s) and electron transport layer (s) have a layer thickness of at most about 1, 5 ⁇ ,
  • a layer thickness of at most about 1, 2 ⁇ for example, a layer thickness of ma imal about 1 ⁇ , for example, a layer thickness of at most about 800 nm, for example, a layer thickness of at most about 100 nm, for example, a layer thickness of about 400 nm, for example, a layer thickness of at most about 300 nm.
  • the organic functional layer structure 106 may include a
  • each OLED unit may for example have a layer thickness of at most about 1.5 ⁇ , for example, a layer thickness of at most about 1, 2 ⁇ , for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 100 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of approximately approximately 300 nm
  • the organic functional layer structure 106 for example, a
  • organic functional layer structure 106 may have a layer thickness of at most about 3 ⁇ .
  • the optoelectronic device 140, 160 may optionally include generally organic functional layer structures, for example, disposed on or over the one or more emitter layers or on or above the electron transport layer (s) serving to enhance the functionality and hence the efficiency of the electron transport layer
  • the other organic functional layer structures can be, for example, by means of a
  • organic functional layer structure 106 On or above the organic functional layer structure 106 or optionally on or above the one or more other organic functional layers
  • Layer structures may be the second electrode 108
  • a second electrode layer 108 may be applied (for example in the form of a second electrode layer 108).
  • the second electrode 108 is by means of an electric
  • Insulation 110 electrically isolated from the first electrode 104.
  • the second electrode 104 In various embodiments, the second
  • Electrode 108 have the same substances or be formed therefrom as the first electrode 104, wherein in
  • Electrode 108 (for example, in the case of a metallic second electrode 108), for example, a layer thickness have less than or equal to about 200 nm,
  • a layer thickness of less than or equal to approximately 150 nm for example a layer thickness of less than or equal to approximately 100 nm, for example a layer thickness of less than or equal to approximately 10 nm, for example a layer thickness of less than or equal to approximately 45 nm,
  • a layer thickness of less than or equal to approximately 40 nm for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm,
  • a layer thickness of less than or equal to about 20 nm for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.
  • the second electrode 108 may generally be formed similarly to, or different from, the first electrode 104.
  • the second electrode 108 may be made from one or more embodiments in various embodiments
  • the first electrode 104 and the second electrode 108 are both formed translucent or transparent.
  • the second electrode 108 can be used as anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode so as an electron injecting electrode.
  • the second electrode 108 may be electrically connected to a second contact pad 114, to which a second contact pad 114 may be connected
  • the second electrical potential may for example have a value such that the difference to the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.
  • a contact pad 112, 114 may be electrically and / or physically connected to an electrode 104, 108. However, a contact pad 112, 114 may also be configured as a region of an electrode 104, 106 or a bonding layer.
  • the first electrode 104 may be electrically connected to a first electrical contact pad 112, to which a first electrical potential can be applied - provided by a power source (not shown), for example a current source or a voltage source.
  • the first contact pad 112 may be in the geometric edge region of the optically active
  • Region 132 of the OLED 140, 160 may be formed on or above the carrier 102, for example laterally adjacent to the first electrode 104.
  • the first electrical potential can be applied to the carrier 102 or be and then applied indirectly to the first electrode 104 or be.
  • the first electrical potential may be, for example, the ground potential or another
  • Electrode 108 to be physically and electrically connected to a second contact pad 114.
  • the first contact pad 112 is by means of electrical
  • Insulators 110 are electrically isolated from the second electrode 108.
  • the electrical insulation 110 may be configured such that a current flow between two electrically conductive regions,
  • Substance mixture of the electrical insulation may be, for example, a coating or a coating agent, for example a polymer and / or a lacquer.
  • the paint can, for example have a coatable in liquid or in powder form coating material, for example, have a polyimide or be formed from it.
  • Insulations 110 can be applied or formed, for example, lithographically or by means of a printing method, for example structured.
  • the printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing.
  • an electrical insulation 110 may be optional, for example, in forming the
  • optoelectronic component 140, 160 with a suitable mask process.
  • the contact pads 112, 114 can be mixed as a substance or a substance or a substance mixture similar to the first
  • Electrode 104 and / or the second electrode 108 or be formed therefrom for example as a
  • Metal layer structure comprising at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr); or molybdenum-aluminum-molybdenum (Mo-Al-Mo), silver-magnesium (Ag-Mg), aluminum.
  • the contact pads 112, 114 may, for example, a
  • the electrical functional structure 130, 150 (shown in FIG. 1 a and FIG. 1 c) can be understood approximately as the region of the optoelectronic component 140, 160 in which an electric current flows for the operation of the optoelectronic component 140, 160.
  • the electrical functional structure 130, 150 shown in FIG. 1 a and FIG. 1 c
  • the electrical functional structure 130, 150 can be understood approximately as the region of the optoelectronic component 140, 160 in which an electric current flows for the operation of the optoelectronic component 140, 160.
  • the first electrode 104, the second electrode 108 and the organic functional layer structure 106 have.
  • the optoelectronic component may have an optically active region
  • Layer structure 106 on or above carrier 102 may be referred to as optically active region 132.
  • optically inactive region 134 Approximately the region of the optoelectronic component 140, 160 without organic functional layer structure 106 on or above the carrier 102 may be referred to as optically inactive region 134.
  • the optically inactive region 134 may, for example, be arranged flat next to the optically active region 112.
  • the optically inactive region 134 may comprise, for example, ontaktpads 112, 114 or insulator layers 110, 116 for electrically contacting the organic functional layer structure 106. In other words, in the geometric border area, the
  • Optoelectronic component 140, 160 may be formed such that contact pads 112, 114 are formed for electrically contacting the optoelectronic component 140, 160, for example by electrically conductive layers, for example contact pads 112, 114, electrodes 104, 108 or the like in the optically inactive region 134 at least
  • the region of the optoelectronic component 140, 160 on or above the carrier 102 with the optically active region 132 and the optically inactive region 134 may be referred to as the electrically active region 136.
  • An optoelectronic component 140, 160 which is an optoelectronic component 140, 160, which is an optoelectronic component 140, 160, which is an optoelectronic component 140, 160, which is an optoelectronic component 140, 160, which is an optoelectronic component 140, 160, which is an optoelectronic component 140, 160, which is an optoelectronic component 140, 160, which is an optoelectronic component 140, 160, which
  • transparent or translucent is formed, for example, a transmitting carrier 102, transmitting
  • Electrodes 110, 114, a transmissive, organic functional layer structure 106, and a transmissive barrier thin-film layer 116 may be two-dimensional, optically active Have sides - in the schematic cross-sectional view of the top and bottom of the optoelectronic
  • component 140, 160 can also have only one optically active side and one optically inactive side, for example in the case of an optoelectronic component 140, 160, which is designed as a top emitter or bottom emitter, for example by the second electrode 108 or the barrier thin film is formed on the carrier 102 reflective of provided electromagnetic radiation.
  • a barrier thin film 116 may be formed on or over the second electrode 108
  • the second electrode 108, the electrical insulation 110 and the organic functional layer structure 106 are surrounded by the barrier film 116, i. in conjunction with barrier film 116 are included with the carrier 102.
  • a layer or a layer structure can be understood which is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen.
  • water moisture
  • oxygen oxygen
  • Barrier thin layer 116 is formed such that it of OLED-damaging substances such as water, oxygen or
  • Solvent can not be penetrated or at most at very low levels.
  • the barrier thin film 116 may be formed as a single layer (in other words, as
  • the barrier skin layer 116 may comprise a plurality of sublayers formed on one another.
  • the barrier skin layer 116 may comprise a plurality of sublayers formed on one another.
  • Barrier thin film 116 as a stack of layers (stack)
  • the barrier film 116 or one or more sublayers of the barrier film 116 may be formed, for example, by a suitable deposition process, e.g. by means of a
  • Atomic Layer Deposition Method e.g. Plasma Enhanced Atomic Layer Deposition (PEALD) or a plasma-less atomic layer deposition (PLALD) method, or by means of a chemical vapor deposition (Chemical Vapor Deposition
  • PECVD plasma enhanced chemical vapor deposition
  • plasmaless vapor deposition plasmaless vapor deposition
  • PLCVD Chemical Vapor Deposition
  • ALD atomic layer deposition
  • MLD molecular layer deposition
  • Atomic layer area lie.
  • Barrier thin layer 116 having multiple sublayers, all sublayers formed by an atomic layer deposition process and / or a molecule layer deposition process (MLD).
  • a layer sequence comprising only ALD layers and / or MLD layers can also be referred to as "nanolaminate"
  • Barrier thin film 116 which has several sublayers on it, one or more sub-layers of the barrier skin layer 116 by a deposition method other than one
  • Atomic layer deposition processes are deposited
  • the barrier film 116 may, according to one embodiment, have a film thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a film thickness of about 10 nm to about 100 nm according to a
  • Embodiment for example, about 40 nm according to an embodiment
  • all partial layers can have the same layer thickness. According to another embodiment in which the barrier thin-film layer 116 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the barrier thin-film layer 116 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another embodiment in which the barrier thin-film layer 116 has a plurality of partial layers, all partial layers can have the same layer thickness. According to another
  • Barrier thin layer 116 different layer thicknesses on iron. In other words, at least one of
  • Partial layers may have a different layer thickness than one or more other of the partial layers.
  • the barrier thin-film layer 116 or the individual partial layers of the barrier thin-film layer 116 may, according to one embodiment, be formed as a translucent or transparent layer.
  • the barrier film 116 (or the individual sub-layers of the barrier film 116) may be made of a translucent or transparent substance (or mixture that is translucent or transparent).
  • Barrier thin layer 116 have one of the following substances or be formed from: alumina, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide
  • Layer stack with a plurality of sub-layers one or more of the sub-layers of the barrier film 116 have one or more high-refractive materials, in other words one or more high-level materials
  • Refractive index for example, with a refractive index of at least 2.
  • Embodiments also completely on a barrier thin film 116 can be dispensed ⁇ shown in Fig. Lc, d).
  • Component device for example, another
  • Barrier thin film 116 may be optional, for example, a cover, such as a Kavticiansglasverkapselung or metallic encapsulation.
  • a getter layer may be arranged (not shown) such that the getter layer hermetically seals the electrically functional structure 130, 150 with respect to harmful environmental influences, for example the diffusion rate of water and / or
  • the getter layer may comprise a matrix and a getter distributed therein
  • Layer translucent, transparent or opaque be formed and a layer thickness of greater than about 1 m. have, for example, a layer thickness of several ⁇ .
  • Getter layer have a lamination adhesive.
  • getter layer can be in different
  • light-scattering particles for example dielectric
  • metal oxides such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (Zr0 2 ), indium tin oxide ⁇ ITO) or indium zinc oxide (IZO), gallium oxide (Ga20 x ) alumina, or titanium oxide.
  • Other particles may be suitable, provided that they have a
  • Be refractive index which is different from the effective refractive index of the matrix of the translucent layer structure of the getter layer, for example, air bubbles, acrylate, or glass bubbles.
  • metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.
  • an electrically insulating layer (not shown) may also be present between the second electrode 108 and the getter layer.
  • SiNOx for example, with a layer thickness in a range of about 300 nm to about 1.5 ⁇ , for example, with a layer thickness in a range of about 100 nm to about 1 ⁇ to protect electrically unstable substances, for example during a wet chemical process.
  • the optically active region 132 may be at least partially free of gettering layer, for example, when the gettering layer is opaque and the optically active region 132
  • the optically active region 132 is formed transparent and / or translucent.
  • the optically active region 132 may be at least partially free of gettering layer to save gettering layer.
  • one or more input / output coupling layers may be formed in the organic, optoelectronic component 140, 160, for example an external outcoupling foil on or above the carrier 102 (not shown) or an internal outcoupling layer (not shown) in FIG.
  • the input / output coupling layer may have a matrix and scattering centers distributed therein, wherein the middle
  • Refractive index of the input / outcoupling layer is greater than the average refractive index of the layer from which the
  • Electromagnetic radiation is provided.
  • Wavelength range of the desired monochrome light or translucent for the limited emission spectrum is the
  • Electrode 118 (shown) or organic radioactive layered structure 106 (not shown). In various embodiments, the electrical
  • Busbar 118 by means of an electrical insulation 120 with respect to further layers of the optoelectronic
  • Component 130, 140, 150, 160 be electrically isolated.
  • the electrical busbar 118 may be formed such that the
  • electrical busbar 118 is at least partially surrounded by organic functional layered structure 106.
  • the electrical busbar 118 can be used to increase the lateral current distribution in the optoelectronic
  • Be configured device for example, if the first electrode 104 and / or the second electrode 108 a
  • the electrical busbar 118 may be electrically connected to one of the electrodes 104, 108, for example.
  • optoelectronic device 130, 140, 150, 160 may include two or more electrical busbars, wherein the plurality of electrical busbars may be associated with the same or different electrical busbars.
  • different electrodes may be electrically coupled.
  • Encapsulation structure may be formed, wherein the
  • Encapsulation structure has a first support structure 122 on or above the electrical busbar 118.
  • the first electrode 104, the electrical busbar 118, the organic functional layer structure 106 and the second electrode 108 are at least partially connected by means of a
  • Barrier thin film 116 an encapsulation structure 142 may be formed.
  • the barrier film 116 may be formed on the carrier 102 according to any of the embodiments of the barrier film.
  • the support structure (122) may be disposed over the electrical bus bar (118) such that the bus bar (118) engages the bus bar (118)
  • Busbar (118) completely covered laterally.
  • the support structure (122) may laterally over the electrical busbar (118) be arranged that at least part of the
  • Support structure (122) can be projected onto the busbar (118).
  • the support structure (122) and the bus bar (118) may overlap. It is by means of such an arrangement
  • the optoelectronic component with an increased light output.
  • the encapsulation structure 142 may include a cover 124
  • a cover 124 may be, for example, a glass cover 124, a metal foil cover 124 or a sealed plastic film cover 124.
  • the cover 124 may be hermetically sealed with respect to water and / or oxygen.
  • the cover 124 may be formed by a second support structure
  • the second support structure 128 can be embodied, for example, as one
  • the second support structure can seal the electrically functional structure 130 flat and hermetically with respect to harmful environmental influences, for example the diffusion rate of water and / or
  • the cover 124 may, for example, on the
  • Barrier thin layer 116 may be glued with an adhesive 128, for example, be laminated.
  • the cover 124 may, for example, as a glass cover, a
  • the cover 124 may, for example, be structured, for example as a cavity glass.
  • the barrier film 116 and / or the cover 124 may be formed such that the
  • a cover 124 is sealed, for example, in terms of water and / or oxygen.
  • a cover 124 is sealed, for example, in terms of water and / or oxygen.
  • the second support structure 128 as a frit connection 128 (engl., glass frit
  • Bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the electrically active region 136 may be formed.
  • Support structure be translucent and / or transparent and have a layer thickness of greater than about 1 ⁇ , for example, a layer thickness of several ⁇ .
  • Support structure have a lamination adhesive or be such.
  • Support structure 128 may be in different
  • light-scattering particles for example dielectric
  • Such as metal oxides such as silicon oxide (SiC> 2), Zinko id (ZnO), zirconium oxide (Zr0 2 ), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga20 x ) may be provided as scattering Alumina, or titania.
  • Other particles may be suitable, provided that they have a Have refractive index, which is different from the effective refractive index of the matrix of the translucent layer structure, for example, air bubbles, acrylate, or glass bubbles.
  • metallic nanoparticles for example, metallic nanoparticles,
  • Metals such as gold, silver, iron nanoparticles, or
  • the like may be provided as light-scattering particles.
  • an electrically insulating layer may be or may be applied between the second electrode 108 and the second support structure 128 or between the second electrode and the first support structure, for example SiN, SiO x ,
  • SiNO x for example with a layer thickness in a range of about 300 nm to about 1.5 ⁇ , for example with a layer thickness in a range of about 100 nm to about 1 ⁇ to protect electrically unstable substances, for example during a wet chemical process.
  • Support structure 122 and / or the second support structure 128 may be configured such that the second support structure 128 has a refractive index that is smaller than that
  • Support structure 122 and / or such a second support structure 128 may comprise, for example, a low-refractive adhesive, for example an acrylate containing a
  • support structure 122 and / or second support structure 128 may also be, for example, a high refractive index
  • Adhesive on iron for example, which has high refractive, non-diffusing particles and a middle
  • Refractive index of the organic functional layer structure corresponds, for example in a range of about 1, 7 to about 2, 0 or greater. Furthermore, a plurality of different adhesives in the first support structure 122 and / or the second support structure 128, which form an adhesive layer sequence.
  • the / may
  • Cover 124, the first support structure 122 and / or the second support structure 128 have a refractive index (for example, at a wavelength of 633 nm) of 1.55.
  • the cavity 126 may comprise a gas, gas mixture and / or a functional layer (not shown).
  • the cavity 126 can
  • the cover 12 the distance of the cover 124 to the electrically functional structure 130, 150; the
  • the functional layer may include a getter, that is, configured as a getter layer. Au or over the getter layer at least partially the cover 124 is arranged. In various embodiments, the getter layer may be at least partially of at least a second one
  • Support structure 128 may be surrounded, for example, such that the getter layer has no surface to air,
  • a getter layer may include or be formed from a getter.
  • a getter may include or be formed from a getter.
  • a layer having a getter may have a getter in the form of particles distributed in a matrix.
  • a "getter” may comprise a substance or a substance mixture which absorbs harmful substances and / or harmful mixtures of substances, for example oxygen or the water of atmospheric moisture, but a getter may also be distributed in a matrix,
  • a getter may in various embodiments as Sto f, for example, have an oxidizable substance or be formed from it.
  • an oxidizable substance can react with oxygen and / or water and thereby bind these substances. Therefore, getters may, for example, have or be formed from easily oxidizing substances from the chemical group of the alkali metal and / or alkaline earth metals, for example magnesium, calcium, barium, cesium, cobalt, yttrium, lanthanum and / or rare earth metals.
  • aluminum, zirconium, tantalum, copper, silver and / or titanium or oxidizable non-metallic substances For example, aluminum, zirconium, tantalum, copper, silver and / or titanium or oxidizable non-metallic substances.
  • a getter can also use CaO, BaO and MgO
  • a getter can also have a desiccant or be formed from it.
  • a desiccant can irreversibly absorb water without changing the volume or water PhysiSorption bind without significantly changing their volume.
  • a getter may include, for example, dried silica gels or zeolites, or may be formed therefrom in various embodiments.
  • a getter comprising or formed from a zeolite can adsorb oxygen and / or water in the pores and channels of the zeolite. In the adsorption of water and / or oxygen by means of dried silica gels and / or zeolites no harmful substances or mixtures can be formed for the underlying layers.
  • getters of dried silica gels and / or zeolite can not change the volume by means of the reaction with water and / or oxygen.
  • the getter particles may in various embodiments have a mean diameter less than about 50 microns, for example, less than about 1 micron.
  • the middle one is a mean diameter less than about 50 microns, for example, less than about 1 micron.
  • the diameter of the getter particles should not be greater than the thickness of the getter layer, for example in order not to damage the adjacent layers and the component.
  • the getter particles may in various embodiments, for example, a maximum mean diameter
  • Getter particles having an average diameter smaller than about 1 ⁇ , for example in a range of about 50 nm to about 500 nm, can have the advantage of iron, that even with a dense packing of the getter particles
  • punctual forces are reduced to, for example, an OLED.
  • the first electrode is a conductive metal
  • the first support structure 122 / or the second support structure 128 may be hermetically sealed with respect to water and / or oxygen.
  • Such a getter layer may, for example, a low-refractive adhesive, for example an acrylate having a
  • Refractive index of about 1.3 Refractive index of about 1.3.
  • the getter layer may include a high refractive index adhesive having, for example, high refractive non-diffusing particles and a mean refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2, 0 or greater.
  • a high refractive index adhesive having, for example, high refractive non-diffusing particles and a mean refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2, 0 or greater.
  • several different adhesives may be provided in the getter layer, which form an adhesive layer sequence.
  • a first support structure 122 on or above the electrical busbar 118 may cause possible
  • Short circuits act. Forming the first support structure 122, for example of a liquid metal,
  • Insulation 120 and / or electrical busbar 118 may be formed by one of the methods used to form contact pads 112, 114 and / or the second Stü z Modellen 128 is used, for example, a
  • Support structure 122, the electrical insulation 120 and / or the electric bus 118 are realized in a range of about 1 ⁇ to about 100 ⁇ .
  • Adhesive may be greater than 100 ⁇ process-related.
  • Support structure 122 and / or the second support structure 128 have one of the following shapes or be formed: point-like, linear, cylindrical, cuboid, pyramidal and / or circular. 2a, b shows schematic cross-sectional views
  • Optoelectronic components in the process for producing an optoelectronic component according to various embodiments.
  • 2a shows different schematic cross-sectional view of an optoelectronic component according to various exemplary embodiments in a method for producing an optoelectronic component.
  • a specific embodiment 200 for producing an optoelectronic component 250 a
  • the barrier film 116 of the patterned substrate covers a large area without being laterally structured.
  • a second metal layer 202 may be formed - represented by reference numeral 210.
  • Metal layer 202 also be understood as a second functional support structure layer 202, for example, when the
  • Support structure 122, 128 is formed of a non-metallic material, for example, when the support structure 122, 128 is formed by means of a glass or plastic,
  • a glass solder for example, a glass solder or an adhesive.
  • forming the second metal layer 202 may include metal alloying or metallization on the electrically functional structure 130, such as depositing Al, Zn, Cr, Sn, Mo, Au, Ag, and / or Ni to form support structures.
  • metal alloying or metallization may include depositing Al, Zn, Cr, Sn, Mo, Au, Ag, and / or Ni to form support structures.
  • the application of the metal alloy 210 or metallization 210 may include
  • the second metal layer 202 may be structured or formed and unstructured.
  • the deposited second metal layer 202 may have a thickness in a range of 20 nm to 25 ⁇ m.
  • forming the second metal layer 202 may include
  • Region 136 may be formed or processed such that it is free of metal layer. This allows further alloying after lamination of the
  • Encapsulation structure can be prevented (see description Fig.5).
  • a cover 124 is provided.
  • This cover 124 may be, for example, a cleaned laminating glass or a film hermetically sealed with protective layers.
  • cover 124 may optionally be an adhesive layer 204 or non-stick layer 204 are formed - represented by Reference numeral 220, for example, for a structured or structured application of a first metal layer 206 - shown by reference numeral 230.
  • the first adhesive layer 204 or non-stick layer 204 are formed - represented by Reference numeral 220, for example, for a structured or structured application of a first metal layer 206 - shown by reference numeral 230.
  • Metal layer 206 may include, for example, a metal or metal alloy that is liquid at room temperature.
  • the second metal layer 206 may be formed, for example, by means of printing, dispensing and / or by means of a solution.
  • the first metal or metal alloy that is liquid at room temperature.
  • the second metal layer 206 may be formed, for example, by means of printing, dispensing and / or by means of a solution.
  • the first metal layer 206 may include, for example, a metal or metal alloy that is liquid at room temperature.
  • the second metal layer 206 may be formed, for example, by means of printing, dispensing and / or by means of a solution.
  • the first metal or metal alloy that is liquid at room temperature.
  • the second metal layer 206 may be formed, for example, by means of printing, dispensing and / or by means of a solution.
  • the first metal or metal alloy that is liquid at room temperature.
  • the second metal layer 206 may be formed, for example, by means of printing, dispensing
  • Metal layer 206 are also understood as the first functional support structure layer 206, for example, when the
  • Support structure 122, 128 is formed of a non-metallic material, for example, when the support structure 122, 128 is formed by means of a glass or plastic,
  • a glass solder for example, a glass solder or an adhesive.
  • a first metal layer 206 may be provided on the edge of the cover 124 with or without a surface application
  • the edge be formed, for example, only on the edge or in the whole area.
  • the whole area In one embodiment, the
  • Non-stick layer 204 or adhesive layer 204 may be formed such that a first metal layer 206 at the edge of
  • Cover 124 for example, geometrically formed further out than the geometric edge of the counterpart 210 (the second metal layer 202 substrate); and / or over the electrical busbar.
  • the second metal layer 206 may be in a
  • Metal layer 206 can be realized.
  • an adhesive layer 204 / an anti-adhesion layer 204 for example, a layer comprising one or more of the following: TiOx, GaOx, WOx, ZrOx, AlOx; optionally on the cover 124
  • step 240 the first
  • the cover 124 with the first metal layer 206 is laminated onto the electrically functional structure 130 with the second metal layer 202.
  • the first metal layer 206 and the second metal layer 202 are materially configured such that they begin to alloy upon formation of physical contact with each other.
  • the second metal layer 202 comprises aluminum and the first metal layer 206 comprises a eutectic GaInSn alloy.
  • the first metal layer 206 remains liquid at the points where it has not reacted with aluminum, and can thus have an increased compression modulus, for example having an increased particle resistance - shown in Fig.2b.
  • the alloyed ones are alloyed ones.
  • Support structure 122, 128 may reduce the compressive stress on softer intermediate regions, such as organic functional layer structure 106.
  • Edge region of the electrically active region can be any shape.
  • Reaction stops for example, a vacuum point, further reacting the first metal layer 206 with the second metal layer 202 avoid.
  • metal support structures 122, 128 as a new alloy for example on one
  • Thin-film encapsulation 116 may be formed.
  • the maximum melting temperature of the first metal alloy should be below the maximum specification temperature of the electrical
  • Support structure 122, 128 should be above the
  • a metallic support structure with such material may be formed by forming the first metal layer 206 or the second metal layer 202 from a eutectic substance or a eutectic substance mixture.
  • the metal layer of the eutectic substance or eutectic substance mixture is at the phase equilibrium (eutectic).
  • Metal layer is formed in this embodiment of a substance or substance that shifts the eutectic substance or the eutectic Stoffgernisch by chemical reaction from the eutectic.
  • the eutectic substance or eutectic substance may exist in possible intermediate regions 126 between the
  • Support structures 122 for example, in cavities 126, are still in phase equilibrium, for example, be elastic or viscoelastic.
  • the eutectic substance or the eutectic substance mixture can act as additional particle protection in the cavities 126 (see FIG.
  • the eutectic or eutectic may, for example, include or be formed from a GaInSn alloy and the complementary metal may be aluminum or tin.
  • the eutectic or eutectic material may include 68% by weight of Ga,
  • Such a GalnSn alloy can have a melting temperature of -19.5 ° C. have and wetted glass, ie is thus processable at room temperature.
  • the melting point of the GaInSn alloy can be adjusted, for example, a GaInSn alloy having 62 wt.% Ga, 22 wt. % In and 16 wt. % Sn has a melting temperature of 10.7 ° C.
  • the melting point of a GaInSn alloy can be adjusted to a process-suitable value.
  • the eutectic or eutectic composition may comprise a Field metal or a Field metal alloy, for example, 51 wt. % In, 33% by weight Bi and 16% by weight -% Sn.
  • a Field metal or a Field metal alloy for example, 51 wt. % In, 33% by weight Bi and 16% by weight -% Sn.
  • Such an InBiSn alloy can have a melting temperature of 62 ° C.
  • the first one may
  • functional support structure layer 206 and / or the second functional support structure layer 202 have an adjustable melting point, for example by means of a substance concentration of the substance or mixture of the first functional support structure layer 206 and / or the second functional support structure layer 202.
  • the fabric or blend of first functional support structure layer 206 and / or second functional support structure layer 202 may wet a glass substrate, i. a contact angle in a range of 0 ° to about 120 °, for example in a range 0 ° to about 90 °, for example in a range of about 0 ° to about 60 °.
  • 3a, b shows schematic cross-sectional views
  • Optoelectronic components in the process for producing an optoelectronic component according to various embodiments.
  • 3a shows various schematic cross-sectional view of an optoelectronic component according to various embodiments.
  • Embodiments in a method for producing an optoelectronic component in a method for producing an optoelectronic component.
  • the barrier film 116 of the patterned substrate covers a large area without being laterally structured.
  • functional structure 130 may be formed on the barrier thin film 116, an anti-adhesion layer 204 / adhesive layer 204 - represented by reference numeral 310.
  • the non-stick layer 20 / adhesive layer 204 may be laterally structured, for example.
  • a first metal layer 206 may be provided on the edge of the cover 124 with or without a surface application
  • the edge be formed, for example, only on the edge or in the whole area.
  • the whole area In one embodiment, the
  • Non-stick layer 204 or adhesive layer 204 may be formed such that a first metal layer 206 at the edge of
  • Cover 124 for example, geometrically formed further out than the geometric edge of the counterpart 210 (the second metal layer 202 substrate); and / or over the electrical busbar.
  • the first metal layer 206 may comprise, for example, a metal or a metal alloy that is liquid at room temperature.
  • the second metal layer 206 can be formed, for example, by means of printing, dispensing, knife coating and / or by means of a solution.
  • a cover 124 is provided. This cover 124 may be, for example, a cleaned laminating glass, a film hermetically sealed with protective layers and / or a metal foil.
  • Cover for example, be laterally structured, for example in the region of the support structures 122, 128 or to be formed, for example, to form a cavity.
  • a second metal layer 202 of a metal alloy or metallization can be formed - represented by reference numeral 320. Die
  • Metal alloy or metallization may, for example, be configured as a deposition of Al, Zn, Cr, Sn and / or Ni, for example structured (shown) or
  • the deposited second metal layer 202 may have a thickness in a range of 20 nm to 25 ⁇ . In various embodiments, forming the second
  • Metal layer 202 comprise forming a plurality of sub-layers in a layer sequence.
  • the geometric edge of the electrically active region 136 may be formed or processed such that it is free of metal layer. As a result, further alloying after lamination of the encapsulation structure can be prevented (see
  • the second metal layer 206 may be in a
  • Metal layer 206 can be realized.
  • an adhesive layer 204 / an anti-adhesion layer 204 for example, a layer comprising one or more of the following materials: TiOx, GaOx, Ox, ZrOx, AlOx; optionally on the cover 124
  • step 340 the second
  • Metal layer 202 on the cover 124 brought into physical contact with the electrically functional structure 130 with the first metal layer 206.
  • the cover 124 with the second metal layer 202 is laminated onto the electrically functional structure 130 with the first metal layer 206.
  • the first metal layer 206 and the second metal layer 202 are fabricated such that they begin to alloy upon formation of physical contact with each other.
  • the second metal layer 202 comprises aluminum and the first metal layer 206 has a eutectic GaInSn alloy.
  • Metal layer 206 possible.
  • the first metal layer 206 remains liquid at the points where it has not reacted with aluminum, and as a result can have an increased compression modulus, for example an increased particle resistance on iron - shown in FIG. 3b.
  • the alloyed ones are alloyed ones.
  • Support structures 122, 128 can compress the pressure
  • the geometric edge region of the electrically active region can avoid reaction stops, such as a vacuum point, further reacting the first metal layer 206 with the second metal layer 202.
  • FIGS. 4a-d show schematic cross-sectional views
  • Edge region of the electrically active region 136 may be before and / or after the formation of the
  • the edge of the support structures 122, 128 may in various embodiments by means of a
  • Non-stick layer (shown in Fig.4b-d) before such
  • FIG. 4b shows two adjacent support structures 122, 128 in which a non-reactive structure 404 is formed next to the support structures 122, 128, for example of a chemically non-reactive material, for example Ni for GaInSn.
  • FIG. 4c shows two adjacent support structures 122, 128 in which, in addition to the support structures 122, 128, an anti-adhesion layer 406 is formed, for example of a non-wetting substance or substance mixture with regard to the substance or substance mixture of the support structures 122, 128.
  • an anti-adhesion layer 406 is formed, for example of a non-wetting substance or substance mixture with regard to the substance or substance mixture of the support structures 122, 128.
  • a support structure 122, 128, which has Ga, In and / or Sn for example, directly on the lamination glass 124 a Antihaf layer 406 comprising GaO x, AlO x, TiO x, ZrO x
  • the substrate of the liquid metal alloy comprises, for example, glass having, for example, good wetting for GaInSn.
  • FIG. 4 d shows two adjacent support structures 122, 128 in which cavity 126 is partially or completely filled with a substance or mixture of substances that a higher
  • a functional layer 206 may be formed, wherein the functional layer 206, the cover in the
  • the functional layer 206 may have a thickness that is less than or equal to the thickness of the support structures 122, 128. In other words, the cavity 126 or the functional layer cavity 126 may have a lower hardness than the thickness
  • Support structure 122, 128 can be formed between cover 124 and electrically functional structure 130, 150, a spring travel, the mechanical loads (see Fig. 8) can reduce / cushion.
  • Support structure 122, 128 may be configured as a material connection of a cover with an electrically functional structure.
  • At least one functional support structure layer 202, 206 for forming a support structure 122, 128 may have a structuring
  • a structured surface or a structured shape or be formed shown in Fig. 5a-c.
  • the surface-to-volume ratio of the functional support structure layer can be increased and thereby the reaction time of the
  • 5a shows a thin functional support structure layer 202, 206 between the cover 124 and the electrical
  • Supporting structural layer 202, 206 may react rapidly with functional support structure layer 202, 206
  • Support structure layer 202, 206 is formed from a very reactive substance or mixture of substances with respect to the substance or the substance mixture of the cover 124, the surface of the electrically active structure 130, 150 and / or a
  • a reactive substance or a reactive substance mixture can be understood to be reactive, i. chemically active.
  • a thin functional support structure layer 202, 206 may be a thin metal layer, a thin metal layer
  • Metal alloy a thin glass layer, a thin ceramic layer, a thin plastic layer or a thin one
  • a thin functional support structure layer 202, 206 may have a thickness in a range of about 30 nm to about 100 ⁇ , for example, in one
  • the first is functional
  • Support structure layer 206 formed as a thin aluminum layer, while the second functional
  • Support structure layer 202 is formed as a GaInSn layer.
  • Fig.5b shows a powdered functional
  • a powdered functional support structure layer 202, 206 may be formed, for example, by powder coating one or more substances of the functional support structure layer 202, 206, wherein the particles have an average diameter in one
  • Range from about 30 nm to about 100 ⁇ .
  • Fig. 5c shows a structured functional
  • a first functional support structure layer 206 may be geometrically and / or chemically complementary to a second functional structure
  • Support structure layer 202 may be formed, wherein these functional support structure layer 202, 206, a support structure 122, 128 form.
  • functional support structure layer 202, 206 have a lamellar shape.
  • FIG. 6 shows schematic cross-sectional views of a conventional optoelectronic component.
  • An organic optoelectronic device shown in FIG. 6
  • an OLED may have an anode 604 and a cathode 608 with an organic functional
  • the organic functional layer system 606 may be one or more
  • Emitterschient / s (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (not shown), in which / which electromagnetic radiation is generated,
  • CGL charge generating layers
  • Electron block layers (not shown), too
  • hole transport layer referred to as hole transport layer (s)
  • HTL hole transport layer
  • hole blockage layers also referred to as hole blockage layers
  • Electron transporting layer ("electron transport layer” - ETL) to direct current flow
  • Organic-based devices such as organic light emitting diodes (OLEDs) are finding widespread use in general lighting, for example as surface light sources.
  • An organic optoelectronic device conventionally comprises: a first electrode 60 formed on or above a carrier 602. On or above the first electrode 604 is an organic functional layer structure 606
  • a second electrode 608 Above or on the organic functional layer structure 606 is a second electrode 608
  • the second electrode 608 is electrically insulated from the first electrode 604 by means of electrical insulation 610.
  • the electrical insulations 610 are configured such that current flow between the first electrode 604 and the second electrode 608 is prevented.
  • the second electrode 608 is physically and electrically connected to a second contact pad 614 and the first electrode 604 is physically and electrically connected to a first contact pad 612.
  • 7a, b show schematic cross-sectional views of a conventional optoelectronic component.
  • Fig. 7a shows a conventional method for encapsulating an optoelectronic device 600. On the second
  • a barrier thin film 700 is formed such that the second electrode 608, the electrical
  • Layer structure 606 is surrounded by the barrier film 616. Furthermore, an adhesive layer 706 is applied to a cover 704.
  • the cover 704 is, for example, a laminating glass 704 or a film 704, and the adhesive is an epoxy adhesive.
  • the cover 704 with adhesive layer 706 is then applied to the barrier film 702 (shown in Fig. 7a). Thereby, an encapsulated optoelectronic device 600 with a conventional encapsulation structure 706 with
  • FIG. 7 b shows a conventional method for encapsulating an optoelectronic component 600.
  • a moisture-binding getter 710 is applied to a cover 704 and a lateral adhesive layer 708 is applied in the edge region of the cover 702.
  • Adhesive layer 708 and getter 710 is then applied to the
  • FIG. 8a, b show schematic cross-sectional views of a conventional optoelectronic component.
  • a pressure 804 or curvature 806 acts on a cover 704 of a conventional encapsulant, such as a protective glass or a lamination glass; can a Particulate contamination 802 in the organic functional
  • the encapsulation protective layers are no longer or less pressed onto the organic functional layers, whereby an increased particle resistance is achieved.
  • the process temperature for producing the encapsulation is lower than the degradation temperature of the organic
  • Substances for example, a maximum of about 80 ° C, whereby the organic substances are spared.
  • the encapsulation according to various embodiments can be applied by various methods, for example vacuum evaporation, printing, spraying,
  • the support structures in conjunction with the thin-film encapsulation may be the
  • the first component of the support structure which is glass wetting, may have a preference in process control for full area patterning with a very low material requirement.
  • the first component is cheaper than previously used adhesives and recyclable.
  • the second component for example, whether the second component is liquid or solid, for example, large areas can be wetted liquid. As a result, for example, a better particle resistance can be made possible.
  • Material of the support structures is non-toxic and
  • Support structures the support structures under ambient lu, for example, in a clean room, are formed.
  • Thin-film encapsulation is possible. This can continue to save costs.

Abstract

Différents modes de réalisation de l'invention concernent un composant optoélectronique (140, 160, 250, 350) comprenant : une zone électriquement active (136) comportant une zone optiquement active (132) et une zone optiquement inactive (134), la zone électriquement active (136) présentant au moins une barre omnibus électrique (118) formée dans la zone optiquement active (132); une structure d'encapsulation située sur la zone électriquement active (136) ou au-dessus de cette dernière, ladite structure d'encapsulation présentant une structure d'appui (122) sur la barre omnibus électrique (118) ou au-dessus de cette dernière dans la zone optiquement active (132).
PCT/EP2014/063385 2013-06-28 2014-06-25 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique WO2014207039A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147904B2 (en) 2013-09-04 2018-12-04 Osram Oled Gmbh Organic optoelectronic component

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012109777A1 (de) * 2012-10-15 2014-04-17 Heliatek Gmbh Verfahren zum Bedrucken optoelektronischer Bauelemente mit Stromsammelschienen
DE102015101463A1 (de) * 2015-02-02 2016-08-04 Osram Oled Gmbh Organische Leuchtdiodenvorrichtung und Verfahren zum Herstellen einer organischen Leuchtdiodenvorrichtung
DE102015212477A1 (de) * 2015-07-03 2017-01-05 Osram Oled Gmbh Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066408A1 (fr) * 2003-01-21 2004-08-05 Siemens Aktiengesellschaft Couche metallique d'un composant electronique et son procede de production
WO2007008946A2 (fr) * 2005-07-12 2007-01-18 Eastman Kodak Company Dispositif a diode electroluminescente organique comprenant des elements d'espacement
GB2462844A (en) * 2008-08-21 2010-02-24 Cambridge Display Tech Ltd Encapsulation of an organic electroluminescent device
DE102008049060A1 (de) * 2008-09-26 2010-04-01 Osram Opto Semiconductors Gmbh Organisches, optoelektronisches Bauteil
WO2012042451A1 (fr) * 2010-09-27 2012-04-05 Koninklijke Philips Electronics N.V. Diode électroluminescente organique dotée d'une couche de recouvrement souple
WO2012090903A1 (fr) * 2010-12-28 2012-07-05 Ｎｅｃライティング株式会社 Dispositif d'éclairage électroluminescent organique et procédé de fabrication dudit dispositif d'éclairage
US20130146908A1 (en) * 2011-12-07 2013-06-13 Au Optronics Corporation Illumination device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030069707A (ko) * 2002-02-22 2003-08-27 엘지.필립스 엘시디 주식회사 유기전계발광 소자 및 그의 제조방법
FR2864701B1 (fr) * 2003-12-26 2006-09-08 Lg Philips Co Ltd Dispositif d'affichage electroluminescent organique et son procede de fabrication
DE102006033713A1 (de) * 2006-05-30 2007-12-06 Osram Opto Semiconductors Gmbh Organisches lichtemittierendes Bauelement, Vorrichtung mit einem organischen lichtemittierenden Bauelement und Beleuchtungseinrichtung sowie Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
CN103081156B (zh) * 2010-08-05 2016-05-04 Oled工厂有限责任公司 有机电致发光器件
EP2628182B1 (fr) * 2010-10-11 2017-03-22 Koninklijke Philips N.V. Oled à dispositifs multiples

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066408A1 (fr) * 2003-01-21 2004-08-05 Siemens Aktiengesellschaft Couche metallique d'un composant electronique et son procede de production
WO2007008946A2 (fr) * 2005-07-12 2007-01-18 Eastman Kodak Company Dispositif a diode electroluminescente organique comprenant des elements d'espacement
GB2462844A (en) * 2008-08-21 2010-02-24 Cambridge Display Tech Ltd Encapsulation of an organic electroluminescent device
DE102008049060A1 (de) * 2008-09-26 2010-04-01 Osram Opto Semiconductors Gmbh Organisches, optoelektronisches Bauteil
WO2012042451A1 (fr) * 2010-09-27 2012-04-05 Koninklijke Philips Electronics N.V. Diode électroluminescente organique dotée d'une couche de recouvrement souple
WO2012090903A1 (fr) * 2010-12-28 2012-07-05 Ｎｅｃライティング株式会社 Dispositif d'éclairage électroluminescent organique et procédé de fabrication dudit dispositif d'éclairage
EP2627156A1 (fr) * 2010-12-28 2013-08-14 Nec Lighting, Ltd. Dispositif d'éclairage électroluminescent organique et procédé de fabrication dudit dispositif d'éclairage
US20130146908A1 (en) * 2011-12-07 2013-06-13 Au Optronics Corporation Illumination device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147904B2 (en) 2013-09-04 2018-12-04 Osram Oled Gmbh Organic optoelectronic component

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