WO2014090626A2 - Dispositif à composant optoélectronique organique et procédé de fabrication d'un dispositif à composant optoélectronique organique - Google Patents

Dispositif à composant optoélectronique organique et procédé de fabrication d'un dispositif à composant optoélectronique organique Download PDF

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Publication number
WO2014090626A2
WO2014090626A2 PCT/EP2013/075271 EP2013075271W WO2014090626A2 WO 2014090626 A2 WO2014090626 A2 WO 2014090626A2 EP 2013075271 W EP2013075271 W EP 2013075271W WO 2014090626 A2 WO2014090626 A2 WO 2014090626A2
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WO
WIPO (PCT)
Prior art keywords
organic
optoelectronic component
electrically conductive
layer
electrode
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PCT/EP2013/075271
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German (de)
English (en)
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WO2014090626A3 (fr
Inventor
Kilian REGAU
Andrew Ingle
Original Assignee
Osram Opto Semiconductors Gmbh
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Publication of WO2014090626A2 publication Critical patent/WO2014090626A2/fr
Publication of WO2014090626A3 publication Critical patent/WO2014090626A3/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Definitions

  • organic light-emitting diodes organic light emitting diode - OLED
  • organic solar cell find increasingly widespread application.
  • An OLED can have two electrodes, for example two
  • Layer system may include one or more emitter layer (s) in which / which electromagnetic radiation
  • Charge pair Generation layer structure consisting of two or more charge pair generation layers
  • Electron block layers also referred to as
  • Hole transport layer (s) HTL
  • hole blocker layers also referred to as electron transport layer (s)
  • ectron transport layer - ETL
  • Organic light-emitting diodes are sensitive electronic components, which may only be connected poled in one direction. A reverse operation is not provided and can lead to a permanent failure of the OLED. As well Electrostatic discharges (electrostatic disCharge - ESD) can damage the OLED and / or cause permanent damage
  • a protective diode having a sufficiently high reverse voltage is connected in series with the OLED in series. In reverse operation, this protection diode blocks a reverse current flow sufficiently and
  • the protection diode is externally reverse biased, i. antiparallel to the OLED, switched. If the OLED is contacted with reverse polarity, the protective diode conducts and short-circuits the voltage, the protective diode being designed for the current flowing through it and enduring this current permanently or the protective diode short-circuiting the polarity reversal voltage only for a short period of time and the connected operating device short circuiting (FIG. the current peak) detects and then shuts off.
  • the protective diode In a conventional method of protecting an organic
  • a flexible printed circuit board (flex printed circuit board - flex-pcb) is applied, for example, bonded.
  • an SMD protection diode surface mounted device - SMD
  • This external protection diode can reversibly absorb or destroy ESD pulses.
  • an ESD pulse can always be passed through the forward-biased diode depending on its polarity, i. either the protective diode or the optoelectronic device, drain. Breakdown-type discharges at the reverse direction
  • switched OLED can be avoided in this way.
  • the processing has traditionally been carried out in an ESO-free environment, which involves high costs for the equipment of the
  • an organic, optoelectronic component device and a method for producing an organic, optoelectronic are only possible in exceptional cases for cost reasons for processors of optoelectronic components.
  • an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter
  • an organic-inorganic substance can be a
  • the term "substance” is understood to mean all of the above substances, for example an organic substance, an inorganic substance, and / or a hybrid substance.
  • a mixture of substances may be understood as meaning components of two or more different substances whose
  • components are very finely divided.
  • a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid
  • a first substance or a first substance mixture may be equal to a second substance or a second substance mixture, if the chemical and
  • a first substance or a first substance mixture may be similar to a second substance or a second substance mixture if the first substance or the first substance mixture and the second substance or the second substance mixture
  • composition approximately the same chemical properties and / or approximately the same physical properties
  • crystalline SiC> 2 as equal to amorphous S1O2 (silica glass) and can be considered as similar to SiO x.
  • refractive index for example, crystalline SiC> 2 (quartz) as equal to amorphous S1O2 (silica glass) and can be considered as similar to SiO x.
  • crystalline SiO 2 be different to SiO x or amorphous S1O2 ⁇
  • amorphous S1O2 may have the same or a similar refractive index as
  • Composition be different from crystalline S1O2.
  • the reference quantity in which a first substance resembles a second substance can be explicitly stated or can be derived from the
  • An electrical contact can be used as an example
  • Component can be electrically closed.
  • a dimensionally stable substance can be added by adding
  • Plasticizers for example solvents, or increasing the temperature become plastically moldable, i. be liquefied.
  • a plastically malleable substance can by means of a
  • the solidification of a substance or mixture of substances, i. the transition of a material from malleable to dimensionally stable may include changing the viscosity, for example, increasing the viscosity from a first viscosity value to a second viscosity value.
  • the second viscosity value may be many times greater than the first viscosity value, for example, i ranging from about 10 to about 10.
  • the fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.
  • the solidification of a substance or mixture of substances can be Process or have a process in which low molecular weight components are removed from the substance or mixture, for example, solvent molecules or low molecular weight, intact components of the substance or the mixture, for example, a drying or
  • the substance or the mixture of substances may, for example, in the moldable state have a higher concentration of low molecular weight substances in the entire substance or substance mixture than in
  • a body of a dimensionally stable substance or mixture of substances may be malleable, for example when the body is arranged as a foil, for example one
  • Plastic film, a glass foil or a metal foil, such a body may for example be called mechanically flexible, since changes in the geometric shape of the body, for example a bending of a foil,
  • a mechanically flexible body for example a film
  • a mechanically flexible body can also be plastically moldable, for example by the mechanically flexible body being solidified after deformation, for example a
  • Component to be understood a component, which is the control, regulation or amplification of an electrical
  • An electronic component may, for example, a diode, a transistor, a
  • Thermogenerator an integrated circuits or a
  • a protection diode may be used as a suppressor diode (transient absorption zener diode).
  • TAZ diode or Transient Voltage Suppressor Diode - TVS diode a Zener diode or a Schottky diode is formed be.
  • a protection diode can also be used as an anti-kick back diode, a reverse bias diode, a flyback diode,
  • Rectifier diode or a snubbing diode In various embodiments, a
  • Protective diode have a configuration of two or more of the diodes described above, for example in one
  • Embodiments a protective diode, a suppressor diode in a unidirectional or a bidirectional
  • the response time of a protection diode may be less than the response time of the protection diode
  • the response time can be understood as the time at which a semiconductor device blocks current flow when the voltage of the forward direction in the reverse direction with respect to the semiconductor component is reversed.
  • Response time can also be referred to as inhibit time, turn-on / off time, clamp time, or forward / reverse recovery time.
  • an overvoltage protection structure can absorb and / or short-circuit high voltages, for example electrostatic discharges ESD, voltage bursts or surge pulses.
  • the electronic component can be understood, wherein the optoelectronic component has an optically active region.
  • the optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.
  • Embodiments for example as an organic compound
  • Organic light emitting diode organic light emitting diode - OLSD
  • organic photovoltaic system for example an organic solar cell
  • the organic functional layer system comprise or be formed from an organic substance or an organic substance mixture which, for example, for providing an electromagnetic radiation from a supplied electric current or to
  • electromagnetic radiation emitting semiconductor device and / or as an electromagnetic
  • electromagnetic radiation emitting diode as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • light emitting diode light emitting diode
  • organic light emitting diode organic light emitting diode
  • Component may be part of an integrated circuit in various embodiments. Furthermore, a
  • a plurality of light emitting devices be, for example, housed in a common
  • emitting electromagnetic radiation can emit
  • absorbing electromagnetic radiation may include absorbing
  • Area of an optoelectronic component can be understood, which can absorb electromagnetic radiation and form a photocurrent from it or by means of an applied voltage to the optically active region
  • An optoelectronic component which has two flat, optically active sides, for example
  • the optically active region can also have a planar, optically active side and a planar, optically inactive side, for example an organic light-emitting diode, which is designed as a top emitter or bottom emitter.
  • an organic, optoelectronic component device is provided, the organic, optoelectronic component device
  • the surge protection structure and the organic optoelectronic component has at least one common layer; and where the
  • Overvoltage protection structure is electrically connected to the organic, optoelectronic device.
  • an organic optoelectronic device device is provided, the organic optoelectronic device device
  • the overvoltage protection structure and the organic, optoelectronic component have at least one common layer, wherein the overvoltage protection structure is electrically connected to the organic, optoelectronic component; the first being electrical
  • conductive portion is a portion of the first electrode and / or the second electrically conductive portion a
  • Overvoltage protection structure has a spark gap.
  • the organic, optoelectronic component as an organic light-emitting diode or a
  • the overvoltage protection structure may be formed electrically in series with the organic, optoelectronic component.
  • the overvoltage protection structure may be formed as a protective diode, wherein the protective diode in the forward direction to the fürliehtiehtung of
  • Protective diode may have a forward direction, which corresponds to the forward direction of the organic, optoelectronic component.
  • the protection diode may be such
  • the breakdown voltage of the protective diode in the reverse direction is greater than a voltage pulse occurring on the orgasmic, optoelectronic component device in the reverse direction of the organic optoelectronic component.
  • the organic, optoelectronic component may have a first electrode and a second electrode
  • the overvoltage protection structure may have a first electrically conductive section and a second electrically conductive section, wherein at least one
  • Optoelectronic component is electrically coupled.
  • the overvoltage protection structure can be formed electrically parallel to the organic, optoelectronic component.
  • the organic, optoelectronic compound in one embodiment, the organic, optoelectronic
  • Component having a first electrode and a second electrode, and the overvoltage protection structure has a first electrically conductive portion, which is connected to the first
  • Electrode is electrically coupled and a second
  • electrically conductive gate which is electrically coupled to the two electrodes.
  • the first electrically conductive portion may comprise a different material than the second electrically conductive portion and / or the first electrode and / or the second electrode. In one embodiment, the first electrically conductive portion may be a region of the first electrode and / or the second electrically conductive portion may be a region of the second electrode.
  • the organic, optoelectronic component device may have a first ontaktpad and a second contact pad, wherein the contact pads for electrically contacting the organic, optoelectronic
  • Component device are arranged and wherein the first electrically conductive portion and / or the first electrode as at least a portion of the first contact pad
  • the electrically conductive portions may be an overlapping arrangement, i. mutually staggered arrangement and / or shifted arrangement to each other, wherein parts of the electrically conductive portions may be parallel to each other, for example, at a distance from each other.
  • the electrically conductive sections can also be at different levels, in the sense of
  • the electrically conductive sections may have a complementary shape and / or arrangement with each other, wherein the first electrically conductive section may be partially and / or completely perpendicular and / or parallel to the second electrically conductive section.
  • a parallel arrangement of the electrically conductive sections for example, as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically conductive
  • the second electrically conductive portion can, for example, the inner electrically
  • the same, a similar or different electrically conductive material as or as the first electrically conductive portion for example, the same, a similar or different electrically conductive material as or as the first electrically conductive portion.
  • the electrically conductive sections may for example have a planar shape, or a tapered shape
  • a surface of electrically conductive portions may be similar to a pin or may be formed similarly to a planar plane.
  • electrically conductive portions having planar shapes may be similar to a pin or pin, or similar to a planar plane.
  • Electrically conductive portions mi of a tapered shape may be formed, for example, similar to a tip or similar to a rounding.
  • the overvoltage protection structure may be formed as a varistor, wherein the varistor is formed electrically parallel to the organic optoelectronic component.
  • the varistor may be partially or completely filled with layers of the organic,
  • optoelectronic component This type of embodiment can also be understood as forming a varistor in the interior of the organic, optoelectronic component.
  • Component be electrically isolated.
  • the surge Schu z structure may be formed as a protective diode, wherein the protective diode is formed electrically parallel to the organic optoelectronic device.
  • the protection diode may be such
  • Element is smaller than the breakdown voltage of the organic, optoelectronic device in the reverse direction, for example, with respect to a voltage pulse occurring at the organic optoelectronic device in
  • the overvoltage protection structure may be formed as a spark gap, wherein the
  • the common layer is the common layer
  • Structure at least partially, for example, the first electrically conductive portion and the second electrically conductive portion of the layer of the the electrodes of the organic, optoelectronic
  • the common layer may comprise at least one electrode of the organic, optoelectronic
  • the overvoltage protection structure in addition to the organic, optoelectronic component
  • the overvoltage protection structure may be under or on the organic,
  • the overvoltage protection structure may be implemented as a structured region of the organic,
  • a spark gap, a varistor or a protective diode i. a region without optically active layers, for example without emitter layers.
  • the organic, optoelectronic component device may have an optically active region and an optically inactive region, wherein the
  • Overvoltage protection structure is formed in the optically inactive region.
  • the overvoltage protection structure in the geomet ischen and Scheme of the organic is the overvoltage protection structure in the geomet ischen and Scheme of the organic
  • Overshield protection structure may be formed on the first contact pad and / or the second contact pad
  • varistor bridge for example as a varistor bridge.
  • Overvoltage protection structure having a configuration of one or more spark gap / s, protection diode (s) and / or varistor (s), which may be electrically connected in series or in parallel to each other.
  • an overvoltage protection structure may comprise at least two protective diodes which are formed electrically parallel or in series with each other, wherein the overvoltage protection structure is formed electrically parallel or in series with the organic optoelectronic component.
  • an overvoltage protection structure can have, electrically parallel to the organic optoelectronic component, at least two protective diodes which are connected in series with one another and whose forward direction is opposite. The protection diodes may for example be designed such that they have an amount of
  • Breakdown voltage may be dependent on the design of the organic optoelectronic component and
  • a protection diode may have a configuration of two or more pn junctions, ie, diodes, for example, in series or
  • Parallel connection for example in a unidirectional or bidirectional configuration.
  • the organic, optoelectronic compound in one embodiment, the organic, optoelectronic
  • Device device be designed such that the response time of the protection diode is smaller than the response time of the organic, optoelectronic component.
  • the protection diode may comprise at least one hole-conducting layer and at least one electron-conducting layer, wherein the at least one hole-conducting layer has physical contact with the at least one e1ekLron contemplatden layer; and wherein at least one hole-conducting layer is electrically connected to the first
  • hole-conducting layer pairs of charge carriers can be generated.
  • at least one of the hole-conducting layer pairs of charge carriers can be generated.
  • Electron conductive layer have a layer thickness in a range of about 1 nm to about 500 nm. In one embodiment, at least one hole-conducting layer may have a layer thickness in a range from about 1 nm to about 500 nm.
  • the substance or mixture of at least one electron-conducting layer and / or the loc-conducting layer can have a transmission greater than approximately
  • the substance or the substance mixture of a hole-conducting layer may have a valence band approximately equal to the conduction band of the substance or of the substance mixture of the electron-conducting layer, with which the
  • hole-conducting layer is in physical contact.
  • the at least one can be any one of the at least one.
  • Electron-conducting layer and / or the at least one hole-conducting layer have a mixture of a matrix and a dopant or be formed therefrom.
  • the at least one hole-conducting layer can have or be formed from an intrinsically hole-conducting substance.
  • the at least one hole-end layer may include or be formed from one of the following intrinsically hole-conducting substances: a PD, HAT-CN, Cu (I) FBz, MoO x , W0 X , V0 X , ReO x , F4- TCNQ, DP-2, NDP-9, Bi (III) pFBz, FloCuPc.
  • the at least one hole-conducting layer can be formed from a mixture of matrix and p-type dopant.
  • the matrix of the at least one hole-conducting layer may have one of the following: substances or be formed from them:
  • Spiro-NPB N, '- bis (naphthalen-1-yl) - N,' - bis (phenyl) - spiro
  • DMFL-TPD N, N'-bis (3-methylhexyl) -N, N 1 -bis (phenyl) -9, 9-dimethyl-fluorene
  • DPFL-TPD ( ⁇ , ⁇ '-bis (3-rethylphenyl) -, ⁇ '-bis (phenyl) -9,9-diphenyl-fluorene);
  • DPFL-NPB ⁇ , ⁇ '-bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -9,9-diphenylfluorene
  • the dopant of the at least one hole-ending layer one of the following substances
  • aNPD comprise or be formed from: aNPD, HAT-C, Cu (I) pFBz, MoO x, W0 X, V0 X, ReO x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, Fl6CuPc.
  • the p-type dopant may have a
  • electron conducting layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%.
  • Electron conductive layer one of the following substances
  • Electron-conducting layer may be formed from a mixture of matrix and n-type dopant.
  • the matrix of the at least one electron-conducting layer may include or be formed from one of the following substances:
  • Naphthalenetetracarboxylic dianhydride or its imides Naphthalenetetracarboxylic dianhydride or its imides
  • Perylenetetracarboxylic dianhydride or its imides fabrics based on siloles with a
  • the n-type dopant of the at least one electron-conducting layer may include or be formed from one of the following: NDN-1, NDN-26, MgAg, CS2CO3, CS3PO4, Na, Ca, K, Mg, Cs, Li, LiF , AlQ3.
  • the ri-dopant may have a mass fraction with respect to the hole-conducting layer in a range of about 0.1% to about 10%,
  • the n-dopant may have a higher or a lower mass fraction of the at least one electron-donating layer of matrix and n-type dopant
  • the varistor may comprise a carrier matrix and at least one material, the varistor properties
  • the material of the carrier matrix can be set up in such a way that the varistor can be moved according to the
  • Forming the varistor has dimensional stability, i. the
  • Viscosity and modulus of elasticity of the support matrix does not change by heat and / or electromagnetic radiation such that the support matrix is mouldable, i. becomes liquid and or plastically deformable.
  • Material of the carrier matrix of the varistor can be so
  • organic, optoelectronic component has dimensional stability.
  • the carrier matrix of the varistor may comprise an electrically insulating material.
  • the carrier matrix of the varistor may comprise as material one of the following materials or be formed from it; a crosslinked, electrically nonconducting polymer, for example an elastomer, an epoxide, a silicone or a silazane.
  • the at least one material having varistor properties may comprise or be formed from one of the following substances or a stoichiometric compound thereof: silicon carbide, a metal oxide, for example a zinc oxide, bismuth oxide, chromium oxide, manganese oxide or
  • the at least one varistor-type material of the varistor may be formed in the form of a plurality of particles in the carrier matrix of the varistor, the particles being, for example, an arbitrary, i. random shape, for example as flakes (flakes); or may have a spherical shape.
  • varistor properties for example, a varistor points. at least one zinc oxide particle and at least one silicon carbide particle; or a zinc oxide particle and a zinc oxide particle with another material,
  • Silicon carbide or other material, such as aluminum is Silicon carbide or other material, such as aluminum.
  • different materials having varistor properties may be arranged to form an electric field at the interfaces of the particles having varistor characteristics, i. it can be used to form a
  • Varistor characteristic so in the carrier matrix of the Varistors may be arranged such that an electrically continuous connection of material with
  • Varistor properties is formed by the carrier matrix of the varistor, wherein to the carrier matrix with the
  • Particles with varistor properties can connect a carrier matrix with conductive particles, a conductive carrier matrix and / or a conductive layer.
  • An electrically continuous connection of the particles with varistor properties can be considered electrical
  • contiguous connection may have an arbitrary, i.e., random, path or a directional, approximately linear path.
  • Varistor properties parallel to the current flow direction of the organic, optoelectronic component be formed in such a way in the carrier matrix of the varistor that the
  • the first voltage value may be approximately equal to the value of the response voltage of the organic
  • the varistor has a response, up to which the organic, optoelectronic device can work regularly.
  • the operating voltage of the varistor should be above the Threshold voltage be formed because a varistor no
  • the varistor can be below the
  • the second voltage value may have a value lower than the breakdown voltage of the organic optoelectronic component and / or smaller ⁇ to be the voltage at which it in the organic,
  • the second voltage value of the varistor may be dependent on the design of the organic optoelectronic component, since the magnitude of the breakdown voltage of the organic, optoelectronic component depends on the configuration of the organic, optoelectronic component
  • Component is.
  • Voltage value of the varistor may have an amount in a range of about 4 V to about 200 V, for example, greater than about 4 V, for example greater about 8V, for example greater about 16 V. ,
  • the differential conductivity of the varistor should be designed such that in the model of an electrostatic discharge of a human body (human body model HBM), with a voltage above the
  • Breakdown voltage of the organic, optoelectronic component on a series resistor connected in series with a resistance value of 1500 ⁇ , across the parallel circuit of Varl stor and organic,
  • the voltage drop across the organic, optoelectronic device always below which is due to chlagbeginn the organic, optoelectronic component.
  • optoelectronic component is applied, i. it can be for
  • the varistor should become conductive, i.
  • the electrical resistance should be very small with respect to the resistance of the organic, optoelectronic
  • Device for example in a range of about 0 ⁇ to about 20 ⁇ , for example, 0.2 ⁇ .
  • the varistor may be configured such that the material of the carrier matrix and the material with
  • Sections of the overvoltage protection structure can be supplied or removed.
  • the varistor may comprise one or more layers of the organic, optoelectronic. Partially or completely penetrate component, for example, be formed vertically in the organic, optoelectronic device.
  • the macroscopic nature of the varistor such as the size of the varistor, may be dictated by the nature of the particles having varistor characteristics and the spacing of the electrically conductive portions of the varistor
  • the overvoltage protection structure can be designed in such a way that a dielectric, for example air, is formed between the first electrically conductive section and the second electrically conductive section.
  • the first electrically conductive portion and the second electrically conductive portion may be arranged relative to each other and arranged relative to each other, that from a voltage applied to the first electrically conductive portion and the second electrically lei-capable portion response, a spark gap between the first electrically conductive portion and the second electrically conductive portion is formed; wherein the response voltage has as value an amount which is greater than the magnitude of the threshold voltage of the organic, optoelectronic component and less than the magnitude of the breakdown voltage of the organic, optoelectronic component is formed and / or smaller than that
  • the second voltage value of the spark gap may depend on the design of the organic compound
  • Breakdown voltage of the organic, optoelectronic component is dependent on the configuration of the organic, optoelectronic component.
  • the second voltage value of the spark gap may be an amount in one Range from about 4V to about 200V, for example greater than about 4V, for example greater than about 8V, for example greater than about 16V.
  • the actual operating voltage of the spark gap for an organic, optoelectronic component can depend on the specific embodiment of the electrically conductive
  • Spark gap between the electrically conductive sections is formed at a certain distance.
  • Spark gap the typical dielectric breakdown strength of air as a dielectric may have a response voltage in a range of about 1 kV / mm to about 3 kV / mm.
  • a spark may skip and discharge may occur when the potential difference between the electrically conductive sections has a value greater than about 3k. At least from this
  • Potential difference can be the electrical resistance of the
  • Locking direction for example in one. Range of about 0 ⁇ to about 500 Q. At about 1 kV, however, at a distance of 1 mm and plane-parallel is electrically
  • conductive sections can not be expected to discharge.
  • the response voltage may be different than in air.
  • Spark gap can be changed.
  • the dielectric between the first electrically conductive portion and the second electrically conductive portion may include or be formed from one of the following: an electrical insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin, a silicone or a ceramic.
  • the dielectric between the first electrically conductive portion and the second electrically conductive portion may include or be formed from a vacuum or a gas; For example, air, oxygen, carbon dioxide, nitrogen, ozone or a noble gas.
  • the electrically conductive connections should be set up such that the value of the response voltage of the
  • Spark gap should be the organic, optoelectronic
  • Component can work normally without a spark
  • Component such as an organic light emitting diode, may be dependent on the Ausgestal tion of the organic optoelectronic device and, for example, in a
  • the response voltage of the spark gap ie the voltage which is necessary to form a sparkover between the first electrically conductive section and the second electrically conductive section, will therefore have at least one voltage value greater than the magnitude of the threshold voltage of the organic, optoelectronic Component is.
  • the spark gap can be below the
  • the voltage value of the spark gap is formed from the latest a sparkover, i. the maximal
  • a typical breakdown voltage may, depending on the configuration of the optoelectronic component, have an amount, for example, greater than approximately 4 V, for example, greater than approximately 8 V, for example greater than approximately 15 V.
  • An embodiment of the electrically conductive sections which satisfy these conditions may, for example, have a distance of about 50 pm and an air dielectric. This embodiment has the advantage that it can be easily produced or executed in terms of process technology.
  • the first electrically conductive section can be electrically conductive relative to the second
  • Abschni t for example, complementary, perpendicular, parallel, concentric or divergent aligned.
  • a divergent orientation of the electrically 1ei capable sections can be set up, for example, as a horn bow and / or Jacob's ladder.
  • the radio treble can be deleted when the voltage drops below the operating voltage.
  • Surface geometry of the following geometric shapes have: flat, round, rough, pointed, and / or complementary to each other, 0 electrically conductive sections with tapered shape, for example, similar to a tip or similar one
  • the minimum value of the response voltage can be reduced since the tapered shapes can locally have a higher field strength than planar shapes.
  • the geometric shapes can be so regular
  • symmetry axis may be a Spiegelleichie0 and / or additionally a rotational symmetry.
  • the smallest distance of the first electrically conductive portion from the second electrically conductive portion, between which forms the spark gap 5, have a value in a range of about 1 ⁇ to about 100 microns.
  • first electrically conductive section and the second electrically conductive section may be surrounded by an encapsulation, for example in one
  • Epoxy resin or a silicone Epoxy resin or a silicone.
  • the encapsulation can serve as mechanical protection for the
  • Force effects such as a shock, impact, camber or bending, before changes, such as increasing or decreasing the distance or deforming the surface of the electrically conductive
  • the encapsulation may be such
  • the dielectric such as air
  • environmental influences such as changing the humidity and / or an irradiation ionizing
  • Overvoltage protection structure is electrically connected to the organic, optoelectronic device.
  • an organic optoelectronic device comprising a first electrode and a second electrode, and an overvoltage protection structure having a first electrically conductive portion and a second electrically conductive portion on or above a support; wherein the overvoltage protection structure and the organic, optoelectronic component have at least one common layer, wherein the overvoltage contactor structure is electrically connected to the organic 'optoelectronic' component, the first being electrically connected
  • conductive portion is a portion of the first electrode and / or the second electrically conductive portion
  • Overvoltage protection structure has a spark gap.
  • the organic, optoelectronic component can be formed as an organic light-emitting diode or an organic solar cell.
  • Overvoltage protection structure electrically formed serially to the organic, optoelectronic device
  • Overvoltage protection structure can be formed as a protective diode, wherein the protective diode in the forward direction to the forward direction of the organic, optoelectronic
  • the protective diode formed serially to the organic, optoelectronic component can have a forward direction
  • the protective diode can be formed such that the breakdown voltage of the protective diode in the reverse direction is greater than one on the organic, optoelectronic component device in FIG
  • the organic, optoelectronic component can be formed with a first electrode and a second electrode and the
  • Overvoltage protection structure with a first electrically conductive portion and a second electrically - 1eitfixede gate are formed, wherein at least one electrically conductive portion of the overvoltage protection structure with an electrode of the organic,
  • Optoelectronic component is electrically coupled.
  • Overvoltage protection structure can be formed electrically parallel to the organic, optoelectronic device.
  • the organic, optoelectronic component can be formed with a first electrode and a second electrode and the
  • Overvoltage protection structure having a first electrically conductive portion connected to the first electrode
  • conductive gate are formed, which is electrically coupled to the second electrode.
  • the first electrically conductive portion may be a region of the first electrode and / or the second electrically conductive portion may be a region of the second electrode.
  • the organic, optoelectronic component device may be formed with a first contact pad and a second contact pad, wherein the contact pads for electrically contacting the organic, optoelectronic component device are set up and wherein the first electrically conductive portion and / or the first electrode as at least one area of the first contact pad is / are set up and / or wherein the second electrically conductive portion and / or the two electrodes is / are set up as at least one area of the second contact pad.
  • the electrically conductive portions may be in an overlapping arrangement, i. mutually offset arrangement and / or shifted arrangement are formed to each other, wherein parts of the electrically conductive portions parallel to each other
  • the electrically conductive sections can be formed, for example, at a distance from each other.
  • the electrically conductive sections can also be formed in different planes,
  • the electrically conductive sections in a complementary shape and / or
  • electrically conductive portion is formed.
  • the electrically conductive sections For example, be formed as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically conductive sections.
  • the second electrically conductive section may form the inner electrically conductive region of a concentric arrangement of electrically conductive sections, wherein the interior of the second electrically conductive section
  • the electrically conductive portions may be formed, for example, in a planar shape and / or a tapered shape.
  • a surface of electrically conductive portions may be formed similarly to a pin or similar to a planar plane
  • electrically conductive sections having planar shapes may be formed similar to a pin or similar to a planar one
  • Electrically conductive portions with a zula fenden shape can be formed, for example, similar to a tip or similar to a rounding.
  • Overvoltage protection structure can be formed as a varistor, wherein the varistor electrically parallel to the
  • organic optoelectronic component is formed.
  • the varistor can be formed on one of the surfaces of the organic, optoelectronic component. In one embodiment of the method, the varistor can be partially or completely formed by layers of the organic, optoelectronic component. This kind the embodiment can also be understood as forming a varistor in the interior of the organic, optoelectronic component. In one embodiment of the method, the varistor can be formed in the interior of the organic, optoelectronic component such that the varistor with respect to further layers of the organic, optoelectronic
  • Component is electrically isolated.
  • Overvoltage protection structure may be formed as a protective diode, wherein the protective diode is formed electrically parallel to the organic optoelectronic device.
  • the protection diode may be such
  • Component is smaller than the breakdown voltage of the organic, optoelectronic device in the reverse direction, for example, with respect to a voltage pulse occurring at the organic optoelectronic device in
  • spark gap is formed electrically parallel to the organic optoelectronic device.
  • the common layer can be structured, for example around the
  • Overvoltage protection structure at least partially
  • the common layer may comprise at least one electrode of the organic
  • optoelectronic component can be formed.
  • organic, optoelectronic device can be formed on or over the overvoltage protection structure.
  • Overvoltage protection structure can be formed as a structured region of the organic, optoelectronic component.
  • the organic, optoelectronic component device can have an optically active region and an optically inactive region
  • overvoltage protection structure is formed in the optically inactive region.
  • Overvoltage protection structure can be formed in the geometric edge region of the organic, optoelectronic component, for example in the edge region in the interior of the organic, optoelectronic component
  • organic, optoelectronic component are formed exposed, are surrounded by an electrically insulating layer or an electrically conductive layer.
  • Contact pad and or the second contact pad are formed, for example, as a varistor bridge,
  • the overvoltage protection structure can be embodied as a configuration of one or more spark gap (s), protection diode (s) and / or
  • Varistor / s which can be electrically connected to each other in series or in parallel, are formed.
  • Overvoltage protection structure may be formed such that it comprises at least two protective diodes, which are electrically parallel or in series with each other, wherein the Kochwoodsschunzs structure el Ektrisch is formed in parallel or in series with the organic optoelectronic device.
  • Overvoltage protection structure may be formed such that the overvoltage protection structure has electrically parallel to the organic optoelectronic component at least two protective diodes, which are connected to each other in series and whose forward direction is opposite.
  • the protection diodes may be formed to have an amount of the response voltage of about 0.6 V and, for example, an amount of the breakdown voltage in a range of about 4 V to about 15 V.
  • the value of the breakdown voltage may be dependent on the configuration of the organic optoelectronic component and, for example, have a value in a range of about 4V to about 1000V.
  • a protection diode may be formed such that the protection diode has a configuration of two or more pn junctions, i. Diodes, for example, in a series circuit or Para11elscha11ung, for example in a
  • a protective diode can be formed such that it is a suppressor diode in a unidirectional or a bidirectional
  • the organic, optoelectronic component device can be designed such that the response time of the protective diode is smaller than the response time of the organic, optoelectronic
  • the protective diode may be formed with at least one hole-conducting layer and at least one electron-conducting layer such that at least one hole-conducting layer has a physical contact toconces ens an electron-conducting layer; and at least one hole-conducting layer is electrically connected to the first electrically conductive portion and at least one electron-conducting layer is electrically connected to the second electrically-conductive portion.
  • hole-conducting layer pairs of charge carriers can be generated.
  • at least one electron-conducting layer having a layer thickness in a range from about 1 nm to about 500 nia can be formed.
  • at least one hole-conducting layer having a layer thickness in a range from approximately 1 nm to approximately 500 nm can be formed.
  • the substance or the mixture of substances may have a transmittance greater than approximately 90% in a wavelength range of approximately 450 nm to approximately 650 nm, little in the form of an electron-conducting layer and / or the hole-conducting layer.
  • the substance or the substance mixture of a hole-conducting layer may have a valence band approximately equal to the conduction band of the substance or of the material
  • the at least one electron-conducting layer and / or the at least one hole-conducting layer may comprise or be formed from a mixture of a matrix and a dopant.
  • a substance mixture of matrix and dopant can be formed for example by means of co-evaporation of the substances of the matrix and the doping on or via a substrate.
  • the at least one hole-conducting layer may comprise or be formed from an intrinsically hole-conducting substance.
  • the little ens can be formed a hole-conducting layer of a mixture of matrix and p-type dopant.
  • the matrix of the * can be at least one hole-conducting layer comprises a material of a Ausges tra ting the matrix of the at least one hole-conducting layer of the optoelectronic component (see above) have or are formed therefrom.
  • the dopant of the at least one hole-conducting layer may comprise or be formed from one of the substances of an embodiment of the dopant of the at least one thermally conductive layer, the optoelectronic component (see above).
  • the p-type dopant may have a mass fraction relative to the at least one
  • the at least one electron donating layer may be intrinsic
  • the intrinsic electron-conducting layer can be one of the substances of a
  • the at least one electron-conducting layer can be formed from a mixture of matrix and n-dopant
  • the matrix of the at least one electron-conducting layer can be one of the substances of an embodiment of the matrix of the least one ens
  • the n-dopant of the at least one electron-conducting layer may be one of the substances of an embodiment of the at least one
  • Component (see above) have or be formed from it.
  • the n-dopant may have a mass fraction relative to the at least one
  • hole-conductive layer in a range of about 0.1% to about 10%, for example in a range of about 1% to about 2%.
  • the n-dopant may have a higher or a lower mass fraction of the at least one electron-conducting layer of matrix and n-dopant than the p-dopant on the
  • the varistor can be a carrier matrix and at least one material that
  • the material of the carrier matrix can be set up in such a way that the varistor, after the formation of the varistor, has the shape of a rod, i. the viscosity and elastic modulus of
  • Carrier matrix changes by means of heat and / or
  • Carrier matrix formable i. liquid and or plastic
  • the carrier matrix of the varistor can be or be set up such that the varistor has dimensional stability during operation of the organic, optoelectronic component.
  • the carrier matrix of the varistor may comprise or be formed from an electrically insulating material.
  • the carrier matrix of the varistor as material may be one of the following substances
  • a crosslinked, electrically non-conductive polymer for example an elastomer, an epoxide, a silicone or a silazane.
  • the at least one material with varistor properties can be one of the following
  • Manganese oxide or cobalt oxide are Manganese oxide or cobalt oxide.
  • the at least one material with varistor properties of the varistor in the form a plurality of particles may be formed in the carrier matrix of the varistor, wherein the particles may, for example, have an arbitrary, ie random, shape, for example as flakes or a spherical shape.
  • At least two particles with varistor properties can be different
  • a varistor has at least one zinc oxide particle and at least one silicon carbide particle or a zinc oxide particle and a zinc oxide particle with a further material, for example with
  • Varistor properties such as silicon carbide or other material, such as aluminum.
  • Varistor properties an electric field is formed i. it can come to form a space charge zone.
  • the particles with varistor properties can be so in the carrier matrix of the particles with varistor properties
  • Varistors are arranged so that an electrically continuous connection of material with
  • An electrically continuous connection of the particles with varistor properties can be considered electrical
  • Connected compound may cause a whirl, i. Random, path (random walk) or directional, approximately linear path.
  • Carrier matrix are arranged so that the operating voltage of the
  • Varistor is greater than a first voltage value and less than a second voltage value. In one embodiment of the method, the first
  • the varistor has a response voltage up to which the organic, optoelectronic component can work regularly.
  • the varistor should be designed such that the response voltage is formed at least above the threshold voltage of the organic, optoelectronic component, since a varistor has no reverse direction, i.
  • the varistor can have as high a resistance as possible below the response voltage, for example in a range from approximately 50 k ⁇ to approximately 50 ⁇ or a small one
  • Strorazier for example in a range of about 0.1 ⁇ to about 10 ⁇ .
  • the varistor can be designed such that the second voltage value an amount smaller than the breakdown voltage of
  • the second voltage value of the varistor may be dependent on the design of the organic optoelectronic component, since the amount of
  • the second voltage value of the varistor may have an amount ranging from about 4 V to about 200 V, for example greater than about 4 V, for example greater than about 8 V, for example greater than about 16 V.
  • the varistor may be formed such that the material of the carrier matrix and the material having varistor characteristics have approximately equal thermal expansion, i. the
  • Carrier matrix compensates for the expansion of the heat generated by an electric current waste heat of the particles with varistor properties, the heat also over the
  • the varistor can be formed such that the varistor partially or completely penetrate or surround one or more layers of the organic, optoelectronic component. In one embodiment of the method the
  • Overvoltage protection structure can be formed such that between the first electrically conductive portion and the second electrically conductive portion, a dielectric is formed, for example, air.
  • the first electrically conductive portion and the second electrically conductive portion may be arranged relative to each other and arranged relative to each other, that from one over the first electrically conductive portion and the second electrically conductive portion adjacent
  • Response voltage as a value has an amount that is greater than the amount of Schwe11enbond of the organic, optoelectronic device and less than the amount of the breakdown voltage of the organic, optoelectronic device is formed and / or smaller than that
  • the second voltage value of the spark gap may depend on the design of the organic compound
  • Breakdown voltage of the organic, optoelectronic component is dependent on the Ausges aging of the organic, optoelectronic device.
  • the second voltage value of the spark gap may have an amount in a range from about 4 V to about 200 V, for example greater than about 4 V, for example greater than about 8 V, for example greater than about 16 V.
  • the dielectric between the first electrically conductive section and the second electrically conductive section may comprise or be formed from one of the following substances: a
  • electrically isoiierenden, crosslinkable organic and / or inorganic compound such as an epoxy resin, a silicone or a ceramic.
  • the dielectric between the first electrically conductive portion and the second electrically conductive portion may comprise or be formed from a vacuum or a gas: for example, air, oxygen, carbon dioxide, nitrogen, ozone or a noble gas.
  • the first vacuum or a gas for example, air, oxygen, carbon dioxide, nitrogen, ozone or a noble gas.
  • electrically conductive portion for example, complementary, perpendicular, parallel, concentric or divergent aligned.
  • Surface geometry of the following geometric shapes have: flat, round, rough, pointed, and / or complementary to each other.
  • the geometric shapes can be so regular
  • Mirror symmetry can be and / or additionally one
  • the distance of the first electrically conductive portion from the two electrically conductive portion between which the spark gap is formed has a value in a range of about 1 ⁇ m to about 100 ⁇ m.
  • electrically conductive portion and the second electrically conductive portion are surrounded by an encapsulation, for example, be enclosed in a cavity, part of a sectional plane of a carrier of the optoelectronic
  • Component is, or be surrounded by a potting material, for example, an electrically insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin or a silicone.
  • a potting material for example, an electrically insulating, crosslinkable organic and / or inorganic compound, for example an epoxy resin or a silicone.
  • the encapsulation can serve as mechanical protection for the
  • electrically conductive portions are formed such that the distance between the surfaces of the electrically conductive portions and the shape of the surfaces of the electrically conductive portions with respect to outer
  • Force effects such as a shock, impact, camber or bending, before changes, such as increasing or decreasing the distance or deforming the surface of the electrically conductive
  • the encapsulation can be set up such that the dielectric
  • Component device according to various embodiments.
  • Component device according to various embodiments; schematic views of a
  • Component device according to various Au guide examples; a portion of the organic, optoelectronic component device in the method for producing a
  • FIGS. 1a-d show schematic circuit diagrams of an organic, optoelectronic component device according to FIG.
  • the radiation already hopping and receiving layers of the organic optoelectronic device 106 may have pn junctions that provide or receive radiation, but a low reverse blocking voltage exhibit. As a result, these layers may be sensitive with respect to an electrical breakdown in the reverse direction or in general terms: with respect to an overvoltage which is caused, for example, by a reverse polarity or a reverse polarity
  • the overvoltage protection structure is built in various embodiments directly in the organic, optoelectronic device. This can
  • the pn junction of the protection diode 108 may be evaporated, printed, and patterned.
  • At least one protection diode 108 may be formed, i. pn junctions having a pure diode action with high reverse blocking voltage and low forward voltage.
  • an overvoltage protection structure may be formed as a protection diode 108 (shown in Fig.la and Fig. Lb).
  • a protection diode 108 may be formed as a suppressor diode 108 (Transient Absorptio Zener Diode - TAZ Diode or Transient Voltage Suppressor Diode - TVS Diode), Zener Diode 108, or Schottky Diode (shown).
  • a protection diode 108 may also be referred to as an anti-kickback diode 108, a reverse bias diode 108, a flyback diode 108, or a snubbing diode 108.
  • a protection diode having a configuration of two or more of the diodes described above, for example, in a series circuit or parallel connection, for example in a unidirectional or a bidirectional
  • Embodiments a protective diode, a suppressor diode in a unidirectional or a bidirectional
  • the organic, optoelectronic component 106 may be formed as a planar organic optoelectronic component 106, for example an OLED 106 or a solar cell 106.
  • the organic, optoelectronic component 106 and the protective diode 108 have common connection structures 102, 104 for electrically contacting, for example common Contact pads 102, 104, wherein the contact pads 102, 104 on the carrier or the operating device of the OLED
  • the protective diode 108 may be at least partially adjacent to, above and / or below the radiation ready portion to be formed and formed - receiving layers of the organic optoelectronic device 106.
  • the protection diode 108 may be electrically related to the
  • the protection diode 108 connected in series should be designed such that it has a high reverse voltage resistance, for example a breakdown voltage greater than approximately 600 V. As a result, current flow and destruction of the organic, optoelectronic component 106 can be prevented.
  • the high reverse voltage resistance for example a breakdown voltage greater than approximately 600 V.
  • Overvoltage protection structure may be formed as a varistor 112 - shown in Fig. Lc (see also Fig.7) - and
  • Component 106 may be formed. When concerns a
  • the varistor 112 may become electrically conductive and the organic
  • a spark gap 114 may be formed between the first electrically conductive portion and the second electrically conductive portion of the overvoltage protection structure, whereby the organic optoelectronic component 106 for the duration of
  • FIG. 2 shows a schematic cross-sectional view of an organic, optoelectronic component according to FIG.
  • the optoelectronic component 106 for example, an electronic component 106 providing electromagnetic radiation, for example a light-emitting
  • Component 106 may have a carrier 202.
  • the carrier 202 may serve as a support for electronic elements or layers, such as light-emitting elements.
  • the carrier 202 can be glass,
  • the carrier 202 may comprise or be formed from a plastic film or laminate having one or more plastic films.
  • the plastic can (one or more polyolefins' (for example, polyethylene? E) (high or low density or polypropylene PP) ⁇ comprise or be formed therefrom.
  • the -plastic can (one or more polyolefins' (for example, polyethylene? E) (high or low density or polypropylene PP) ⁇ comprise or be formed therefrom.
  • Polyvinyl chloride PVC
  • PS polystyrene
  • PC polycarbonate
  • PET polyethylene terephthalate
  • the carrier 202 may comprise one or more of the above-mentioned substances.
  • the carrier 202 may be a metal or a metal auf us- Getting Connected or formed therefrom ', for example copper, silver, gold, platinum or the like.
  • a carrier 202 comprising a metal or a
  • Metal compound may also be formed as a metal foil or a metal-coated foil.
  • the carrier 202 may be translucent or even transparent.
  • translucent or “translucent layer” can be understood in various embodiments that a layer is permeable to light
  • the Li chtemittierenden device for example, one or more
  • Wavelength ranges for example, for light in one
  • Wavelength range of the visible light for example, at least in a partial region of the wavelength range of 380 um to 780 ran.
  • the term "translucent layer” in various embodiments is to be understood to mean that substantially all of them are in one
  • Amount of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered here
  • transparent or “transparent layer” can be understood in various embodiments that a Schich is permeable to light
  • Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.
  • Embodiments as a special case of "translucent" to look at.
  • the optically translucent layer structure at least i a portion of the wavelength range of the desired monochrome light or for the limited
  • the organic light emitting diode 106 (or else the light emitting devices according to the above or hereinafter described
  • Embodiments may be configured as a so-called top and bottom emitter.
  • a top and / or bottom emitter can also be used as an optically transparent component,
  • a transparent organic light emitting diode For example, a transparent organic light emitting diode, be designated.
  • the carrier 202 On or above the carrier 202 may be in different
  • Embodiments optionally be arranged a barrier layer 204.
  • the barrier layer 204 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,
  • Indium zinc oxide aluminum-doped zinc oxide, as well Mixtures and alloys thereof. Furthermore, the
  • Barrier layer 204 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 m.
  • an electrically active region 206 of the light-emitting component 106 may be arranged on or above the barrier layer 204.
  • the electrically active region 206 can be understood as the region of the light emitting device 106 in which an electric current is used to operate the
  • the electrically active region 206 may comprise a first electrode 210, a second electrode 214 and an organic radioactive structure 212, as will be explained in more detail below.
  • the first electrode 210 may be in the form of a first electrode 210, for example
  • Electrode layer 210) may be applied.
  • the first electrode 210 (also referred to below as the lower electrode 210) may be formed of or be made of an electrically conductive material, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs.
  • Transparent conductive oxides are transparent, conductive substances, for example
  • Metal oxides such as zinc oxide, tin oxide,
  • binary metal oxygen compounds such as ZnO, S 02, or ⁇ 2 ⁇ 3 also include ternary metal oxygen compounds such as AlZnO, Zn2Sn04, CdSn ⁇ 3, ZnSn03, Mgln.204, GalnOß, Z 2l 20s or In Sri30i2 or mixtures of different transparent conductive oxides to the group of COs and can be used in various embodiments.
  • TCOs do not necessarily correspond to one
  • stoichiometric composition and may also be p-doped or n-doped.
  • Electrode 210 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, and
  • Electrode 210 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one
  • ITO indium-tin oxide
  • ITO-Ag-ITO multilayers Silver layer deposited on an indium-tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.
  • Electrode 210 one or more of the following substances
  • Networks of metallic nanowires and particles for example of Ag; Ne twins of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.
  • the first electrode 210 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.
  • Electrode 210 and the carrier 202 may be translucent or transparent.
  • the first electrode 210 comprises or is formed of a metal
  • the first electrode 210 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one Layer thickness of less than or equal to approximately 20 nm,
  • a layer thickness of greater than or equal to about 10 nm for example, a layer thickness of greater than or equal to about 15 nm.
  • the first electrode 210 a the first electrode 210 a
  • Layer thicknesses a range from about 10 nm to about 25 nm, for example, a layer thickness ranging from about 10 nm to about 18 nm, for example, a layer thickness ranging from about 15 nm to about 18 nm.
  • the 'first electrode 210 for example, have a layer thickness in a range from about 50 nm to about 500 nm, for example, a layer thickness in a Range of about 75 nm to about 250 nm, for example, a layer thickness in a range of
  • the first electrode 210 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes which may be combined with conductive polymers or of graphene may be used. Layers and composites are formed, the first electrode 210, for example, a
  • Layer thickness in a range of about 1 nm to about 500 ⁇ m for example, a layer thickness in a range of about 10 nm to about 400 nm,
  • the first electrode 210 may be formed as an anode, ie as a hole-injecting electrode or as
  • the first electrode 210 may be a first electrical
  • the first electrical potential may be applied to the carrier 202 and then indirectly applied to the first electrode 210.
  • the first electrical potential may be, for example, the ground potential or another predetermined reference potential.
  • the organic functional layer structure 212 may comprise one or more emitter layers 218, for example with fluorescent and / or phosphorescent emitters, and one or more hole-conducting layers 216 (also referred to as hole-transport layer (s) 220).
  • emitter layers 218, for example with fluorescent and / or phosphorescent emitters and one or more hole-conducting layers 216 (also referred to as hole-transport layer (s) 220).
  • hole-transport layer (s) 220 also referred to as hole-transport layer (s) 220.
  • one or more electron conduction layers 216 may be provided.
  • the light emitting device 106 according to various aspects
  • organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or substituted poly-p-phenylenevinylene ⁇ as well as metal complexes, for example Iridi m complexes such as blue phosphorescent ⁇ FIrPic (bis (3,5-difluoro-2- (2-pyidyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescent
  • fluorescent DCM2 (dicyanomethyl) -2-methyl-6-ylolidol-9-enyl-4H-pyran) as a non-polymeric emitter.
  • non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can
  • Polymer emitter can be used, which in particular by means of a wet chemical process, such as a spin-on process (also referred to as spin coating), are deposited.
  • the emitter materials may be suitably embedded in a matrix material.
  • Emitter materials are also provided in other embodiments.
  • the emitter materials of the emitter layer (s) 218 of the light emitting device 106 may be selected such that the light emitting device 106 emits white light.
  • the emitter layer (s) 218 may comprise a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)
  • the emitter layer (s) 218 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 218 or blue
  • phosphorescent emitter layer 218 and a red phosphorescent emitter layer 218.
  • the emission of light can result in a white color impression.
  • it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.
  • the organic functional layer structure 212 may generally include one or more electroluminescent layers.
  • the one or more electroluminescent layers may generally include one or more electroluminescent layers.
  • Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules, or a combination of these materials.
  • the organic functional layer structure 212 may be one or more
  • Hole transport layer 220 is or are, so that, for example, in the case of an OLED an effective
  • the organic functional layer structure 212 may include one or more functional layers, which may be referred to as a
  • Electron transport schient 216 is executed or are, so that, for example, in an OLED an effective
  • Electron etation in an electroluminescent layer or an electroluminescent region is made possible.
  • As a substance for the hole transport layer 220 can be any substance for the hole transport layer 220 .
  • the one or more electroluminescent layers may or may not be referred to as
  • electroluminescent layer is executed.
  • the electroluminescent layer is executed.
  • Hole transport layer 220 may be deposited on or over the first electrode 210, for example, deposited, and the emitter layer 218 may be on or above the
  • Hole transport layer 220 may be applied, for example, be deposited.
  • electrode transport layer 216 may be applied to or over the emitter layer 218, for example, deposited.
  • the organic functional layer structure 212 ie, for example, the sum of the thicknesses of hole transporting slits 220 and
  • the organic functional layer structure 212 for example, a
  • each OLED for example, a maximum thickness of about 1, 5 microns, for example, a layer thickness of at most about 1, 2 microns, for example, a layer thickness of maximally about hr 1, for example, a layer thickness of about a maximum 800 n, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.
  • OLED organic light-emitting diodes
  • each OLED for example, a maximum thickness of about 1, 5 microns, for example, a layer thickness of at most about 1, 2 microns, for example, a layer thickness of maximally about hr 1, for example, a layer thickness of about a maximum 800 n, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.
  • the organic radioactive layer structure 212 for example, a maximum thickness of about
  • organic functional layer structure 212 may have a layer thickness of at most about 3 pm.
  • the light emitting device 106 may generally include other organic functional layers, for example
  • Electron transport layer (s) 216 which serve to further improve the functionality and thus the efficiency of the light-emitting device 106.
  • organic functional layer structure 212 On or above the organic functional layer structure 212 or optionally on or above the one or more further organic functional layers
  • Layer structures may be the second electrode 214
  • a second electrode layer 214 may be applied (for example in the form of a second electrode layer 214).
  • Electrode 214 have the same substances or be formed therefrom as the first electrode 210, wherein in
  • metals are particularly suitable.
  • the second metal is particularly suitable.
  • the second metal is particularly suitable.
  • the second metal is particularly suitable.
  • Electrode 214 (for example, in the case of a metallic second electrode 214), for example, have a layer thickness of less than or equal to about 50 nm,
  • a layer thickness of less than or equal to approximately 45 nm for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,
  • a layer thickness of less than or equal to about 25 nm for example, a layer thickness vo less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.
  • the second electrode 214 may generally be formed similarly to, or different from, the first electrode 210.
  • the two electrodes 214 may be made in one or more embodiments
  • the first electrode 210 and the second electrode 214 are both formed translucent or transparent.
  • the illustrated in Fig. 1 the illustrated in Fig. 1
  • light emitting device 106 may be formed as a top and bottom emitter (in other words, as a transparent light emitting device 106).
  • the second electrode 214 can be used as the anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode so as an electron injecting electrode.
  • the second electrode 214 may have a second electrical connection to which a second electrical connection
  • the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.
  • the second electrode 214 and thus on or above the electrically active region 206 may optionally be an encapsulation 208, for example in the form of a Barrier thin film / thin film encapsulation 208.
  • a “barrier thin film” 208 or a “barrier thin film” 208 can be understood as meaning, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form.
  • the barrier film 208 is formed to be resistant to OLED damaging agents such as
  • the barrier film 208 may be formed as a single layer (in other words, as
  • the barrier thin film 208 may comprise a plurality of sublayers formed on each other.
  • the barrier thin film 208 may comprise a plurality of sublayers formed on each other.
  • Barrier thin film 208 as a stack of layers (stack)
  • the barrier film 208 or one or more sublayers of the barrier film 208 may be formed, for example, by a suitable deposition process, e.g. by means of a
  • ALD Atomic Layer Deposition
  • PEALD plasma-enhanced atomic separation
  • Chemical Vapor Deposition e.g. one
  • PECVD plasma enhanced chemical vapor deposition
  • PLCVD plasmaless vapor deposition
  • ALD atomic layer deposition process
  • Barrier thin film 208 comprising a plurality of sublayers, all sublayers being formed by an atomic layer deposition process.
  • a layer sequence, which has only ALD layers may also be referred to as "Naiio1aminat. According to an alternative embodiment, in a
  • Barrier thin film 208 comprising a plurality of sub-layers, one or more sub-layers of the bar ierenCOLn harsh 208 by means of a different deposition method than one
  • Atomic layer deposition processes are deposited
  • the barrier film 208 may, in one embodiment, have a film thickness of about 0.1 nm to about 1000 nm, for example, a film thickness of about 10 nm to about 100 nm according to a
  • Ausgestal for example, about 40 nm according to an embodiment.
  • all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin film 208 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin film 208 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin film 208 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin film 208 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another
  • Barrier thin layer 208 have different layer thicknesses. In other words, at least one of
  • Partial layers have a different layer thickness than one or more other of the partial layer.
  • the barrier film 208 or the individual sub-layers of the barrier film 208 may be formed as a translucent or transparent layer according to an embodiment.
  • the barrier film 208 (or the individual sub-layers of the barrier film 208) may be made of a translucent or transparent substance (or a mixture of substances that is translucent or transparent),
  • the barrier thin layer 208 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the
  • Barrier film 208 comprising or being formed from one of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys
  • Layer stack having a plurality of sublayers one or more of the sublayers of the barrier film 208 comprise one or more high refractive indexes, in other words one or more high content materials
  • Refractive index for example, with a refractive index of at least 2.
  • the cover 226, for example made of glass, for example by means of a frit bonding (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric
  • Edge regions of the organic optoelectronic component 106 are applied to the barrier film 208.
  • Protective varnish 224 be provided, by means of which, for example, a cover 226 (for example, a glass cover 226, a metal foil cover 226, a sealed one
  • Plastic film cover 226) is attached to the bar ierenPSn Anlagen 208, for example, is glued.
  • translucent layer of adhesive and / or protective varnish 224 have a layer thickness of greater than 1 ⁇ m
  • a layer thickness of several um for example, a layer thickness of several um.
  • the adhesive may include or may be a lamination adhesive.
  • Adhesive layer ⁇ can be embedded in various embodiments still light scattering particles, which leads to a • further improvement of the color angle distortion and the
  • Exemplary embodiments may be provided as light-scattering particles, for example scattered dielectric particles, such as, for example, metal oxides, such as e.g. Silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide ⁇ Ga 2 Oa)
  • metal oxides such as e.g. Silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide ⁇ Ga 2 Oa)
  • Alumina, or titania may also be suitable if they have a refractive index that is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate, or glass hollow spheres.
  • metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.
  • between the second electrode 214 and the layer of adhesive and / or resist 224 still an electrically insulating layer
  • SiN for example, having a layer thickness in a range of about 300 nm to about 1.5 ⁇ m, for example, having a layer thickness in a range of about 500 nm to about 1 ⁇ m to be electrically unstable Protect substances, for example, during a wet chemical process.
  • the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index
  • Such an adhesive may be, for example, a low-refractive adhesive such as a
  • an adhesive may be a high refractive index adhesive
  • a plurality of different adhesives may be provided which form an adhesive layer sequence.
  • Embodiments can also be dispensed with entirely an adhesive 224, for example in embodiments in which the cover 226, for example made of glass, are applied to the barrier thin film 208 by means of, for example, plasma spraying.
  • Cover 226 and / or the adhesive 224 have a refractive index ⁇ for example, at a wavelength of 633 nm) of 1.55.
  • Be provided 1ichteir.i11 Schlierenden device 106. 3 shows a schematic cross-sectional view of an organic, optoelectronic component device, according to various embodiments.
  • an embodiment of an optoelectronic component according to one of the embodiments of the description of FIG. 1, marked by section 106, is shown as a region of an organic, optoelectronic component device 300 (overvoltage protection structure is not shown).
  • a first electrode 210 formed on or above a carrier 202.
  • an organic functional On or above the first electrode 210 is an organic functional
  • Layer structure 212 formed. About or on the
  • a second electrode 214 is formed.
  • the second electrode 214 is electrically insulated from the first electrode 210 by means of electrical insulation 304.
  • the second electrode 214 may be physically and electrically connected to an electrical connection layer 302. The electric
  • Bonding layer 302 may be formed in the geometric edge region of carrier 202 on or above carrier 2 02, for example laterally next to first electrode 210.
  • the electrical connection layer 302 is electrically connected to the first one by means of a further electrical insulation 3 04
  • Electrode 210 isolated. On or above the second electrode 214, a barrier thin film 208 is disposed such that the second electrode 214, the electrical insulation 304, and the organic functional layer structure 212 are surrounded by the barrier film 208, that is, in FIG.
  • barrier thin film 208 can hermetically seal the trapped layers from harmful environmental influences. On or above the
  • Barrier thin film 208 is an adhesive splice 224 arranged such that the Klebschie t 224 the
  • Barrier thin layer 208 seals surface and hermetically with respect to harmful environmental influences.
  • a cover 226 is arranged on or above the adhesive layer 224.
  • the cover may be adhered to the barrier film 208 with an adhesive 224
  • the region of the optoelectronic component 106 with an organic functional layer structure 212 on or above the carrier 202 can be designated as the optically active region 312.
  • the optically inactive region 314 may, for example, be arranged flat next to the optically active region 312.
  • An optoelectronic component 106 which is at least translucent, for example transparent, formed, for example, a least translucent carrier 202, at least translucent electrodes 210, 214, an at least translucent, organic functional layer system and aiquess ens translucent barrier thin layer 208th
  • on eist for example, can have two planar, optically active sides - in the schematic cross-sectional view of the top and bottom of the optoelectronic
  • device 106 may also have only one optically active side and one optically inactive side,
  • an optoelectronic component 106 which is designed as To emitter or bottom emitter, for example by the second electrode 106 or the
  • Barrier thin film 208 is reflective for ready e electromagnetic radiation is formed.
  • the carrier 202, the first electrode 210, the organic functional layer structure 212, the second electrode 214, the barrier film 208, the adhesive layer 224, and the cover 226 may be, for example, according to any one of
  • the electrical insulations 304 are set up such that current flow between two electrically conductive regions, for example between the first electrode 210 and the second electrode 214, is prevented.
  • the shock or the substance mixture of the electrical insulation can be
  • the lacquer may have, for example, a coating substance which can be applied in liquid or in powder form,
  • the electrical insulation 304 can be applied or formed, for example by means of a printing process, for example, structured.
  • the printing process may, for example, comprise ink-jet printing, screen-printing and / or pad-printing
  • the electrical connection layer 302 may be a substance or mixture of substances, a substance or a mixture of substances similar to the electrodes 210, 214 according to one of the embodiments of
  • the optically inactive region 314 may be, for example
  • the optoelectronic component 106 may be formed such that contact pads 102, 104 are configured to electrically contact the optoelectronic component 106, for example by electrically conductive layers, for example, electrical connection layers 302,
  • An ontact pad 102, 104 may be electrically and / or physically connected to an electrode 210, 214, for example by means of a connection layer 302.
  • a contact pad 102, 104 may also be configured as a region of an electrode 210, 214 or a connection layer 302.
  • the contact pads 102, 104 may be a substance or a substance mixture similar to the second substance or substance mixture
  • Electrode 214 according to one of the embodiments of
  • Fig. 1 or be formed therefrom, for example as a metal layer structure with
  • Fig. A, b shows schematic views of a
  • Fig. A shows a detail of a schematic
  • organic, optoelectronic device device 110 with surge arrester structure according to the description of Fig. Ib. Shown is another portion of the organic optoelectronic device device 300 according to one of the embodiments of the description of FIG.
  • Dargestell is a first electrically conductive portion
  • the first electrically conductive section 408 can
  • the anode 102 and the second electrically conductive portion 410 may be electrically connected to the cathode 104 of the organic optoelectronic device device 300, i. the first electrode 210 of the organic, optoelectronic component 106 is electrically connected to the anode 102 of the organic, optoelectronic component device, and the two electrodes 214 to the electrode 104 of the organic, optoelectronic
  • first electrically conductive portion 408 may be an electron-conducting layer 404 of the
  • Overvoltage protection structure 108 may be formed
  • the electron-conducting layer 404 may include a
  • a hole-conducting layer 406 of the overvoltage protection structure 108 may be formed, for example printed, sprayed or deposited.
  • the hole-conducting layer 406 may comprise an intrinsically hole-conducting substance or a mixture of carrier matrix and p-type dopant.
  • a second electrical connection layer 402 may be formed,
  • the second electrical connection layer 402 may, for example, be similar or equal to the first electrode 210, the second electrode 214, the first electrical
  • Section 410 may be formed.
  • the second electrical connection layer 402 may electrically connect to the second electrically conductive one 41 0.
  • the electrical insulation 412 for example, similar to one of the embodiments of the electrical
  • Insulations 3 04 may be formed according to the description of FIG.
  • the protective diode 108 may be formed, for example, in the optically inactive region 3 14 of the organic, optoelectronic component device.
  • 5a shows a section of a schematic
  • the first electrically conductive portion 502 may
  • the first electrode 210 of the organic, optoelectronic component 106 is electrically connected to the cathode 504 of the protective diode and the second electrode 214 to the cathode 104 of the organic, optoelectronic component device 300 - shown as schematically. it equivalent circuit diagram in Figure 5b.
  • a hole-conducting layer 406 of the overvoltage protection structure 108 may be formed, for example printed, sprayed or deposited.
  • the hole-conducting layer 406 may be an intrinsically hole-conducting substance or a
  • Substance mixture of carrier matrix and p-Dotierstof f have.
  • hole-guiding layer 406 may be a
  • the elektronenle.itendo layer 404 of the overvoltage protection structure 108 may be formed, for example, be printed, sprayed or deposited.
  • the electron-conducting layer 404 may comprise an intrinsically electron-conducting substance or a mixture of carrier matrix and n-dopant,
  • a second electrical connection layer 02 may be formed, for example printed, sprayed or deposited.
  • the second electrical connection layer 402 may, for example, be similar or equal to the first electrode 210, the second electrode 214, the first electrical one
  • Section 410 may be formed.
  • the second electrical connection layer 402 may be electrically connected to the second electrically conductive section 410 be connected and electrically relative to the first
  • electrical insulation 412 for example, similar to one of the embodiments of the electrical
  • Isolations 304 may be formed according to the description of FIG.
  • the protective diode 108 may be embodied, for example, in the optically inactive region 314 of the organic optoelectronic component device.
  • Optoelectronic component device in the method for producing an overvoltage protection structure, according to
  • Fig. Sa shows an electrically conductive layer structure 608 on or above the support 202 of the organic
  • the carrier 202 may, for example, according to one of
  • the electrically conductive layer structure 608 may
  • electrically conductive metal oxide and / or a metal or be formed therefrom for example, similar to the first electrode 210 and or the second elec- trode 214 one of the embodiments of the description of FIG.
  • a region 602 of the electrically conductive layer structure 608 may be removed from the carrier 202, that is, electrically insulated from one another
  • Sections 604, 606 are formed, for example by the carrier 202 in the area 602 is exposed - shown in Fig.6.
  • the exposure of the carrier 202 can be carried out, for example, ballistically. A ballistic exposure of the
  • areas to be cleared can be detected, for example, by bombardment of the free area with particles, molecules,
  • Atoms, ions, electrons and / or photons can be realized.
  • a bombardment with photons can, for example, as
  • the electrically conductive layer structure 608 may be structured in such a way that the
  • High-voltage protection structure for the electrically parallel connected organic optoelectronic device 106 is formed.
  • Sections 604, 606 may be in different
  • Substance mixture are at least partially filled,
  • the substance or mixture of substances between the electrically conductive Sections 604, 606 for forming a varistor 114 (see FIG. 7) or a spark gap 610 is not limited to the electrically conductive Sections 604, 606 for forming a varistor 114 (see FIG. 7) or a spark gap 610.
  • the first can be electrically
  • conductive portion 604 may be electrically connected to the first ontakt pad 102 of the organic optoelectronic device device 300 (not shown) and the second electrically conductive portion 606 may be connected to the second one
  • spark gap 610 is electrically parallel to the organic, optoelectronic device.
  • Overvoltage protection structure ' as a spark gap 610, the substance or the substance mixture in the region 602 between the electrically conductive portions 604, 606, a dielectric.
  • the dielectric may for example be a gas, for example air, an electrically insulating, crosslinkable organic and / or inorganic compound, for example a
  • Sections 604, 606 may be surrounded by an encapsulation, wherein the encapsulation may be optional or comprise or may be formed from the same material as the dielectric, for example by over-filling the region 602.
  • the encapsulation may partially or completely surround the electrically conductive sections 604, 606; for example, the electrically conductive sections 60, 606 may be part of a cross-section of a support of an organic,
  • the encapsulation may, for example, be further
  • the encapsulation can serve as mechanical protection for the
  • Spark gap 610 may be formed such that the distance between electrically 1eitTalken sections 604, 606 and the shape of the surfaces of the electrically conductive portions
  • the encapsulation may be such
  • the dielectric such as air
  • environmental influences such as changing the humidity and / or an irradiation of ionizing radiation, such as UV radiation or X-rays
  • These environmental influences could alter the necessary voltage which should be present across the electrically conductive sections 604, 606 in such a way that the formation of a spark gap is formed at a value of the applied voltage which is below the threshold voltage of the electronic component to be protected or above the breakdown voltage of shiny electronic
  • Component can be formed.
  • the electrically conductive portions 604, 606 may have a lanate shape or have a tapered shape.
  • electrically conductive sections 604, 606 having planar shapes may be configured similar to a pin or similar to a planar plane. Electrically conductive sections 604, 606 with a
  • tapered shape can be formed, for example, similar to a tip or similar to a rounding. By means of the tapered shape, the necessary tension for the
  • Forming the spark gap can be reduced as the
  • the electrically conductive sections 604, 606 may also be partially or completely arbitrary, for example by means of roughness or coarse
  • the electrically conductive layer is electrically conductive
  • Sections 604, 606 have a complementary arrangement to each other, wherein the first electrically conductive portion 604 partially perpendicular and / or parallel to the second
  • electrically conductive portion 606 may be formed.
  • the electrically conductive portions 60, 606 may have an overlapping arrangement, i. a staggered arrangement and / or
  • electrically conductive portions 604, 606 may be shifted arrangement of the electrically conductive portions 604, 606 to each other, wherein parts of the electrically conductive portions 604, 606 may be parallel to each other, for example, at a distance 602 from each other.
  • the electrically conductive sections 604, 606 may also be in different planes, in the sense of a layer in the
  • a parallel arrangement of the electrically conductive sections 604, 606 may be, for example, as a partially and / or completely concentric arrangement and / or coaxial arrangement of the electrically leitfand gene
  • Sections 604, 606 be formed
  • the electrically conductive portions 604, 606 may have a diverging arrangement, for example as a horn bow or as
  • the actual response voltage of the .Funkenumble for an organic, optoelectronic device device may be dependent on the specific configuration of the electrically conductive sections 604, 606, so that often a voltage range is specified, within which a
  • Spark gap between the electrically conductive portions 604, 606 can be formed at a certain distance. With the choice of the dielectric between the electrically conductive sections 604, 606, the response voltage of the spark gap can be changed at a constant distance.
  • the electrically conductive connections should be such
  • a typical value for a floating voltage of an organic optoelectronic device may be formed in a range of about 0 V to about 5 V.
  • a typical breakdown voltage can be for such
  • the device may be formed in a range of about 170V to about 200V.
  • a Ausges age of the electrically conductive portions 60, 606 that meet these conditions for example, have a distance 414 having a value of about 50 microns and ei dielectric having the air or formed therefrom.
  • This embodiment has the advantage that
  • FIG. 7 shows a schematic plan view of a varistor, according to various application examples.
  • the embodiment of the overvoltage protection structure in FIG. 6c can be implemented in the region 602 in various embodiments
  • Embodiments be bridged by means of a varistor bridge 114 or a varistor 114.
  • Varistor 610 may include particles 704 of a material having
  • Varistor properties form an internal electric field that may resemble a semiconductor pn junction.
  • the internal electric field can be transmitted via the electric field by means of an external electric field
  • Sections 604, 606 are dismantled. The inner ones
  • Electric fields can be formed over the interfaces 706 of particles 704 with varistor properties and be directed against the outer, applied electric field.
  • the resistance of the varistor 610 may decrease, so that a current flow through a varistor 610 may be possible and the current above the response voltage may increase exponentially.
  • causes of the increase of the current above the response voltage may be by means of the applied voltage, the compensation of internal electric fields.
  • the value of the response voltage may be determined by the number of coupled particle interfaces 706 in FIG.
  • the value of the response voltage can vary from the length of the varistor 610 in the current direction, the size of the
  • the geometric dimension of the varistor 610 for example, the length parallel to the direction of current flow, and the size of the
  • Particles 704 are adjusted with varistor characteristics with respect to the length of the varistor 610 in the current flow direction.
  • the varistor should be designed such that the
  • optoelectronic component 106 in which it is conductive and smaller than the voltage at which the component to be protected is irreversibly damaged, for example, the breakdown voltage or an overvoltage in
  • the threshold voltage of the organic, optoelectronic component 106 to be protected can
  • a high resistance of the varistor 610 can be formed by means of existing internal fields at the particle interfaces Leakage, for example in a range of about
  • the varistor should be designed such that the
  • Response voltage is smaller than the breakdown voltage of the organic to be protected, optoelectronic device 106 in the reverse direction, for example, a response of ZnO particles in a range of about 30 V to about 100 V or a response voltage in a range of about 100 V to about 200 V. of SiC particles.
  • the voltage drop across the varistor 610 may be at a response voltage in a range approximately equal to the
  • a rise in the current with applied voltage for example in the case of the SiC varistor 610 between approximately 200 V and approximately 300 V.
  • the varistor 610 may be formed, for example, a carrier matrix of a one-component epoxy, a two-component epoxy, a silicone or an acrylate.
  • the epoxy resin in the moldable state may have a viscosity in a range of about 0.8 Pa * s to about 4 Pa * s.
  • the epoxy resin in the dimensionally stable state may have a viscosity in a range of about 2.5 GPa ⁇ s to about 3.0 GPa ⁇ s.
  • the hardness of the dimensionally stable epoxy resin may have a Shore D hardness (20 ° C) in a range of about 87 to about 89.
  • the silicone may have a viscosity in the range of about 0.8 Pa ⁇ s to about 4 Pa ⁇ s in the moldable state exhibit .
  • Silicone in a dimensionally stable state Silicone in a dimensionally stable state, a modulus of elasticity in a range of about 1 MPa to about 6 MPa
  • the hardness of the dimensionally stable silicone may have a Shore hardness (20 ° C) of about 40.
  • SiC flakes (SiC flakes) with a diameter d $ Q of approximately 1.7 ⁇ m and a dgo of
  • Flakes can have a value in a range of about 5 m / g
  • the SiC flakes may be the support matrix, such as a silicone, a one-part epoxy or the
  • Carrier component of a two-component epoxy with respect to the mass of the composition of carrier matrix and SiC flakes in a mass fraction of about 20% to about 70% are added, for example in a range of
  • the Stoffgenisch of carrier matrix and SiC flakes can as
  • Varistor paste be understood.
  • the varistor paste may be dispensed to a varistor 610, for example, having a length in a range of about 200 ⁇ to about 300 ⁇ m; a width in a range of about 30 ⁇ m to about 60 ⁇ m, for example 50 ⁇ m; and a height in a range of about 5 ⁇ to about 50 ⁇ , for example 10 microns.

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  • Electroluminescent Light Sources (AREA)
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Abstract

Divers modes de réalisation concernent un dispositif à composant optoélectronique organique (100, 110, 120, 130, 300), ce dispositif à composant optoélectronique organique (100, 110, 120, 130, 300) comprenant : un support (202); un composant optoélectronique organique (106) comprenant une première électrode et une seconde électrode; et une structure de protection contre la surtension (108, 114, 610) comprenant un premier segment électroconducteur et un second segment électroconducteur; le composant optoélectronique organique (106) et la structure de protection contre la surtension (108, 114, 610) étant formés sur le support (202) ou au-dessus de celui-ci; la structure de protection contre la surtension (108, 114, 610) et le composant optoélectronique organique (106) comprenant au moins une couche commune; la structure de protection contre la surtension (108, 114, 610) étant connectée électriquement au composant optoélectronique organique (106), le premier segment électroconducteur constituant une zone de la première électrode et/ou le second segment électroconducteur constituant une zone de la seconde électrode; et la structure de protection contre la surtension (108, 114, 610) comprenant un éclateur.
PCT/EP2013/075271 2012-12-14 2013-12-02 Dispositif à composant optoélectronique organique et procédé de fabrication d'un dispositif à composant optoélectronique organique WO2014090626A2 (fr)

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DE102012223159.5A DE102012223159A1 (de) 2012-12-14 2012-12-14 Organische, optoelektronische bauelementevorrichtung und verfahren zum herstellen einer organischen, optoelektronischen bauelementevorrichtung
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