WO2015124617A1 - Procédé pour produire un composant optoélectronique organique, et composant optoélectronique organique - Google Patents

Procédé pour produire un composant optoélectronique organique, et composant optoélectronique organique Download PDF

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Publication number
WO2015124617A1
WO2015124617A1 PCT/EP2015/053402 EP2015053402W WO2015124617A1 WO 2015124617 A1 WO2015124617 A1 WO 2015124617A1 EP 2015053402 W EP2015053402 W EP 2015053402W WO 2015124617 A1 WO2015124617 A1 WO 2015124617A1
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WIPO (PCT)
Prior art keywords
powder
layer structure
layer
powder layer
organic
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PCT/EP2015/053402
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German (de)
English (en)
Inventor
Dieter Musa
Michael Popp
Original Assignee
Osram Opto Semiconductors Gmbh
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Publication of WO2015124617A1 publication Critical patent/WO2015124617A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing an organic optoelectronic component and a
  • organic optoelectronic component Organic-based optoelectronic components
  • organic light emitting diodes organic light emitting diodes
  • OLEDs organic solar cells
  • OLEDs organic solar cells
  • An organic optoelectronic device may include an anode and a cathode having an organic functional one
  • the functional layer system may comprise one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layers each of two or more charge generating layers (CGL) for charge carrier pair generation, and one or more
  • Electron block layers also referred to as
  • HTL Hole transport layer
  • ETLs electron transport layers
  • Organic optoelectronic components are generally sensitive to air due to the oxygen and
  • Organic optoelectronic devices are also sensitive to particles, especially when
  • thin film encapsulated organic optoelectronic Can cause components failure in arranging a cover body and / or a lamination.
  • the organic functional layers, and / or that the organic optoelectronic component has the necessary tightness to water and / or oxygen, for example, of less than 10 "5 g / cm 2 / d.
  • optoelectronic component which is simple and / or inexpensive to produce and / or robust against particles in the sensitive layers, such as the organic functional layers, and / 'or the necessary tightness to water and / or oxygen, for example, of smaller 10 "s g / cm 2 / d.
  • a first electrode is formed.
  • An organic functional layer structure is formed over the first electrode.
  • a second electrode is formed over the organic functional layer structure.
  • a powder layer structure comprising at least one powder becomes laterally adjacent and / or above the organic functional layer structure formed. At least one
  • Part of the powder layer structure is by means of
  • Powder layer structure merges into a solid closed capsule structure at least in the partial area.
  • Powder layer structure can be introduced, for example by means of flash heating (flash heating) and / or by means of laser radiation, for example by means of pulsed
  • the powder layer structure can be locally heated and melted, for example, to the partial area.
  • Capsule structure allow in particular, au
  • the optoelectronic component possible, for example, approximately halving the total thickness of the organic optoelectronic component is possible.
  • a capsule structure can be produced that is so thin that it can be used for flexible organic optoelectronic components, for example for flexible OLEDs.
  • Heat load for the organic materials of the organic functional layer structure is very low or even negligible. This can contribute to a particularly long life of the organic optoelectronic component.
  • the costs for the production method and / or the organic optoelectronic component can be further reduced, since a favorable material can be used as the encapsulation material, in particular as powder of the powder layer structure, compared with the materials for known encapsulation structures. Furthermore, that can
  • a laminating glass and / or a covering body can also be arranged on or above the capsule structure be, for example by means of an adhesive,
  • the powder can be any suitable adhesive.
  • the powder can be any suitable adhesive.
  • the powder can be any suitable adhesive.
  • the powder can be any suitable adhesive.
  • the powder layer structure may be completely or partially melted. If the powder layer structure is only partially melted, at least one external to the organic optoelectronic device may be
  • Powder layer of the powder layer structure formed next to the organic functional layer structure.
  • Powder layer is melted by means of the electromagnetic radiation, so that the first powder layer to a solid closed Randkapkapung the capsule structure
  • Powder layer structure is formed over the organic functional layer structure and over the edge encapsulation.
  • the second powder layer is at least partially melted by means of the electromagnetic radiation, so that the second powder layer is fixedly connected to the edge seal and that at least one side of the second powder layer remote from the organic radioactive layer structure melts into a cover encapsulation of the capsule structure.
  • the capsule structure may be formed by, for example, two capsule elements, in particular the
  • Edge encapsulation serves to encapsulate the organic
  • the first powder layer and the second Pul pushed can have the same material or different materials.
  • first and second powder layers may be continuous or formed from the same powder and / or formed simultaneously.
  • edge encapsulation and the Deckverkapselung can be integrally formed, be formed from the same material and / or formed simultaneously.
  • the edge encapsulation represents a laterally structured
  • Powder layer then serves as a buffer layer for receiving particles and / or at external mechanical pressure. Due to the lateral structurability, the capsule structure can be easily adapted to different designs and / or shapes of
  • the capsule structure in plan view simply roundish, for example, circular or oval, or polygonal, for example, three, four, five or hexagonal,
  • the powder layer structure is simply applied in the required shape and then fused in the edge area and / or deck area to the closed capsule structure.
  • the powder layer structure is simply applied in the required shape and then fused in the edge area and / or deck area to the closed capsule structure.
  • Partial layers formed.
  • the partial layers can be
  • the sub-layers of powders with different materials and / or of Powders formed with different average particle sizes are provided.
  • Grain sizes can be achieved that the sub-layers have different properties.
  • the sub-layers may have different melting points, so that one of the sub-layers melts at a given predetermined energy to be introduced and another does not.
  • the non-melting part-layer can then, for example, as
  • Stop layer serve for the melting process.
  • a stop layer having a relatively high melting point can be formed directly on the second electrode, and a relatively low melting point partial layer can be formed over the stop layer, which is then fused to the cover encapsulation, for example
  • Stop layer remains powdery.
  • the different partial layers can be correspondingly
  • the material of the partial layers can be adapted to the substrate material and / or carrier material of the organic optoelectronic component, in particular configured to be similar to this
  • the sublayers have different radio functions and become dependent on the
  • Stop layer serve.
  • one of the partial layers can serve as a scattering layer.
  • scattering particles can be introduced into the corresponding sublayer.
  • one of the partial layers can serve as a scattering layer.
  • scattering particles can be introduced into the corresponding sublayer.
  • one of the partial layers can serve as a scattering layer.
  • Partial layers serve as an electrically conductive layer.
  • the powder of the electrically conductive material for example, the powder of the electrically conductive
  • Partial layer be electrically conductive and / or it can be electrically conductive structures, such as particles and / or nanostructures, in the electrically conductive
  • Partial layer are introduced.
  • one of the partial layers can be used as electrically insulating
  • one of the sub-layers may serve as a conversion layer for converting light with respect to its wavelength.
  • phosphor particles can be introduced into the corresponding partial layer.
  • one of the partial layers can serve as a mirror layer.
  • a mirroring powder may be used for the mirror layer and / or particles reflecting the powder may be added.
  • the powder or. the powder scattering particles and / or nanostructures to achieve at least one predetermined effect.
  • the nanostructures may, for example, nanodots, nanotubes and / or
  • the powder or powders comprise glass, metal and / or ceramic.
  • Powder layer structure by means of deposition or by means of
  • Press plate for example, compressed powder
  • an organic optoelectronic device is provided.
  • the organic optoelectronic component has a first electrode.
  • An organic functional layer structure is formed over the first electrode.
  • a second electrode is formed over the organic functional layer structure.
  • a powder layer structure comprising a powder is adjacent and / or above the organic functional
  • Capsule structure is beside and / or above
  • the closed capsule structure is formed from the same material as the powder layer structure or as a sub-layer of the
  • the capsule structure is a fused portion of the powder layer structure.
  • the capsule structure may also be a different material than the
  • Pulverschich structure for example, if the powder layer structure before the melting process has partial layers with different materials and the capsule structure is formed by one of the sub-layers and the
  • unmelted remainder of the powder layer structure is formed by another of the sublayers.
  • Powder layer of Pulverschich structure formed laterally adjacent to the organic functional layer structure.
  • a second powder layer of the powder layer structure is formed over the organic functional layer structure. Over the second powder layer, a cover encapsulation of the capsule structure is formed.
  • Powder layer structure only partially melted, especially in the edge region and in the deck area, so that close to the organic functional layer structure, the first powder layer and the second powder layer remain powdery and / or surrounded by the edge encapsulation and / or the Deckverkapselung and / or are enclosed,
  • the first powder layer and the second powder layer remain powdery and / or surrounded by the edge encapsulation and / or the Deckverkapselung and / or are enclosed
  • Partial layers are formed when the powder layer structure in the portion in which it is melted, the
  • Partial layers and the sub-layers are melted.
  • the sublayers are formed of different materials and / or powders having different average grain sizes.
  • the sublayers have different functions.
  • one or more of the partial layers serve as scattering layers, as electrically conductive layers, as electrically insulating layers, as mirror layers and / or as conversion layers.
  • the powder and / or capsule structure comprises scattering particles, nanoparticles,
  • Phosphor particles reflective particles, electrically lei end particles, electrically insulating particles and / or glass, metal and / or ceramic on.
  • Figure 1 is a side sectional view of a
  • Powder layer structure of an embodiment of an organic optoelectronic device is an organic optoelectronic device.
  • An organic optoelectronic component may emit an organic electromagnetic radiation
  • Component or an organic electromagnetic radiation absorbing component is.
  • Electromagnetic radiation absorbing device may be, for example, an organic solar cell.
  • Component may, for example, an organic compound
  • electromagnetic radiation emi11 Schlierendes semiconductor device and / or as an organic
  • electromagnetic radiation emitting diode or as an organic electromagnetic radiation emitting
  • the radiation can be formed.
  • the radiation can be formed.
  • organic light-emitting diode Organic light emitting diode
  • OLED Organic light emitting diode
  • organic light-emitting device can in
  • Fig.l shows a conventional organic optoelectronic device 1.
  • the conventional organic optoelectronic device 1.
  • Component 1 has a carrier 12. An optoelectronic layer structure is formed on the carrier 12.
  • the optoelectronic layer structure has a first electrode layer 14, which has a first contact section 16, a second contact section 18 and a first
  • Electrode 20 The carrier 12 with the first
  • Electrode layer 14 may also be referred to as a substrate.
  • the second contact portion 18 is connected to the first electrode 20 of the optoelectronic layer structure
  • the first electrode 20 is separated from the first contact portion 16 by means of an electrical
  • the organic functional layer structure 22 may, for example, have one, two or more sublayers over the organic functional one
  • a second electrode 23 of the optoelectronic layer structure is formed, which is electrically coupled to the first contact portion 16.
  • the first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure.
  • the second electrode 23 serves corresponding to the first electrode as the cathode or anode of the optoelectronic
  • Encapsulation layer 24 a first recess of the encapsulation layer 24 are formed over the first contact portion 16 and a second recess of the encapsulation layer 24 over the second contact portion 18. In the first recess of the encapsulation layer 24, a first contact region 32 is exposed and in the second recess of the
  • Encapsulation layer 24 is a zeiter contact area 34 exposed.
  • the first contact region 32 serves for
  • the adhesive layer 36 comprises, for example, an adhesive, for example an adhesive,
  • Adhesive layer 36 is a cover 38 is formed.
  • the adhesive layer 36 serves to fasten the cover body 38 to the encapsulation layer 24.
  • the cover body 38 has, for example, glass and / or metal.
  • the cover body 38 serves to protect the conventional organic
  • cover body 38 may serve for distributing and / or dissipating heat, which in the conventional organic
  • FIG. 2 shows a detailed lateral sectional view of a layer structure of the conventional organic optoelectronic component 1 according to FIG.
  • Layer structure is a foreign body
  • a dust particles 38 penetrates, for example, the second electrode 23 and the organic functional layer structure 22 and short the first and second electrodes 20, 23, resulting in partial or complete failure of the conventional organic optoelectronic device 1.
  • the dust particles 38 may, for example, during a
  • Forming the encapsulation view 24 has come into the layer structure.
  • the dust particles 38 may have deposited on the second electrode 23 and the
  • Dust particles 38 may have been covered by the encapsulation layer 24. Due to the high hardness of the
  • Fig. 3 shows an embodiment of an organic optoelectronic device 10.
  • Optoelectronic component 10 has a carrier 12. On the carrier 12 is an opto-electronic
  • the optoelectronic Schichtens structure has a first electrode layer 14, which has a first contact portion 16, a second contact portion 18 and a first
  • Electrode 20 is on. The carrier with the first
  • Electrode layer 14 may also be referred to as a substrate.
  • the second contact section 18 is electrically coupled to the first electrode 20 of the optoelectronic layer structure.
  • the first electrode 20 is separated from the first contact portion 16 by means of an electrical
  • Isolation barrier 21 electrically isolated.
  • About the first Electrode 20 is an organic functional one
  • the organic functional layer structure 22 may, for example, have one, two or more sub-layers, as explained in greater detail below with reference to FIG. About the organic functional
  • Layer structure 22 is a second electrode 23 of FIG.
  • the first electrode 20 serves, for example, as an anode or
  • the second electrode 23 serves corresponding to the first electrode as the cathode or anode of the optoelectronic
  • Contact section 18 is formed a powder layer structure 40 of the optoelectronic layer structure.
  • Powder layer structure 40 is one, two or more
  • the powder (s) may, for example, comprise powder or granules.
  • the powder layer structure 40 may include, for example, a first powder layer 42 disposed and / or formed laterally adjacent to the organic functional layer structure 22, and / or a second powder layer 44 disposed and / or formed over the organic functional layer structure 22.
  • the first powder layer 42, 44 may be a
  • Powder layer 42, 44 may be formed by the same or different powders.
  • the first and second powder layers 42 may be formed simultaneously or sequentially.
  • the first and second powder layers 42, 44 may form a common powder layer.
  • a capsule structure 46 is formed above and / or laterally next to the powder layer structure 40.
  • the capsule structure 46 is firmly and closed and encapsulates the optoelectronic layer structure.
  • the capsule structure 46 is fixed and substantially hermetically coupled to the substrate.
  • the capsule structure 46 has, for example, an edge encapsulation 48 that laterally adjoins the organic functional
  • Layer structure 22 is formed and / or arranged, and / or a cover encapsulation 50, which is formed on the organic functional layer structure 22 and./oder arranged on.
  • Deckverkapselung 50 are fixed and coupled with each other substantially hermetically sealed. Alternatively, the
  • Capsule structure 46 integrally formed and substantially hermetically sealed. That the capsule structure 46 in
  • Substantially hermetically sealed to each other and / or the capsule structure 46 is substantially hermetically sealed to the substrate may mean, for example, that the capsule structure 46 in cooperation with the substrate, a seal against water and / or
  • Oxygen for example, less than 10 ⁇ 6 g / cm 2 / d.
  • the capsule structure 46 is of one, two or more
  • Powder layer structure 40 is formed, as explained in more detail below with reference to Figure 6.
  • the capsule structure 46 may be formed of the same powders as the first one
  • Powder layer 42 and / or the second powder layer 44 or the capsule structure 46 may be formed by different powders such as the first powder layer 42 and / or the second
  • the capsule structure 46 and / or the powder layer structure 40 have, for example, glass, metal, and / or ceramic, for example in pure form or as a mixture. Furthermore, the capsule structure 46 and / or the
  • Powder layer structure 40 additives such as scattering particles, electrically, conductive particles, electrically insulating
  • the capsule structure 46 may serve, for example, as a replacement and / or instead of the covering body 38.
  • a first contact region 32 is used for electrical
  • first contact portion 16 and a second contact region 34 serves for electrically contacting the second contact portion 18.
  • Fig. 4 shows a side sectional view of a
  • an organic optoelectronic component 10 can, for example, largely correspond to the organic optoelectronic component 10 explained above.
  • an adhesive layer 36 is formed over the capsule structure 46.
  • the adhesive layer 36 comprises, for example, an adhesive, for example an adhesive,
  • a laminating adhesive f for example, a varnish and / or a resin.
  • a varnish for example, a varnish and / or a resin.
  • a resin for example, a varnish and / or a resin.
  • Cover body 38 is formed.
  • the adhesive layer 36 serves to attach the cover body 38 to the
  • the cover body 38 has
  • the cover body 38 may be formed substantially of glass and a thin metal layer, such as a
  • Metal foil and / or a graphite layer, for example a graphite laminate, have on the glass body.
  • a graphite layer for example a graphite laminate
  • Cover body 38 serves to protect the organic
  • the cover body 38 may serve for distributing and / or dissipating heat generated in the organic optoelectronic component 10.
  • the glass of the Cover body 38 serve as protection against external influences and the metal layer of the cover 38 can be used for distributing and / or discharging during operation of the organic
  • Fig. 5 shows a detailed sectional view of a
  • organic optoelectronic device for example, the above-explained organic
  • Optoelectronic component 10 may be formed as a top emitter and / or bottom emitter. If the organic
  • Optoelectronic component 10 is designed as a top emitter and bottom emitter, the organic
  • optoelectronic component 10 as an optically transparent component, for example a transparent organic compound
  • the organic optoelectronic component 10 has the carrier 12 and an active region above the carrier 12. Between the carrier 12 and the active region, a first, not shown, barrier layer, for example a first barrier thin layer, may be formed.
  • the active region has the first electrode 20, the organic
  • the powder layer structure 40 in particular the second powder layer 44, and the
  • Capsule structure 50 in particular the Deckverkapselung 50, formed.
  • the cover body 38 can be arranged above the active area and the cover encapsulation 50.
  • the cover body 38 may be arranged, for example by means of an adhesive layer 36 on the Deckverkapselung 50.
  • the active region is an electrically and / or optically active region.
  • the active region is, for example, the region of the organic optoelectronic component 10 in which electrical current is used to operate the organic optoelectronic component 10 flows and / or in which electromagnetic radiation is generated or absorbed.
  • the organic functional layer structure 22 may include one, two or more functional layered structure units and one, two or more intermediate layers between them
  • the carrier 12 may be translucent or transparent.
  • the carrier 12 serves as a carrier element for electronic elements or layers, for example light-emitting elements.
  • the carrier 12 may comprise or be formed, for example, glass, quartz, and / or a semiconductor material or any other suitable material.
  • the carrier 12 may be a plastic film or a
  • Laminate with one or more plastic films Laminate with one or more plastic films
  • the plastic may have one or more polyolefins. Furthermore, the plastic may have one or more polyolefins. Furthermore, the plastic may have one or more polyolefins. Furthermore, the plastic may have one or more polyolefins. Furthermore, the plastic may have one or more polyolefins. Furthermore, the plastic may have one or more polyolefins. Furthermore, the plastic may have one or more polyolefins. Furthermore, the plastic may have one or more polyolefins. Furthermore, the
  • the carrier 12 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound,
  • the carrier 12 may be formed as a metal foil or metal-coated foil.
  • the carrier 12 may be part of or form part of a mirror structure.
  • the carrier 12 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way.
  • the first electrode 20 may be formed as an anode or as a cathode.
  • the first electrode 20 may be translucent or transparent.
  • the first electrode 20 comprises an electrically conductive material, for example metal and / or a conductive transparent oxide
  • TCO transparent conductive oxide
  • the metals or TCOs exhibit .
  • the first electrode 20 may comprise a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.
  • ITO indium tin oxide
  • metal for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or
  • Transparent conductive oxides are transparent, conductive materials, for example, metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium-tin oxide (ITO).
  • metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium-tin oxide (ITO).
  • binary metal oxygen compounds such as ZnO, SnO 2, or In 2 O 3 also belong ternary metal oxygen compounds such as AIZnO, Zn2SnO4, CdSnO3, ZnSnO3, Mgln20, GalnO3, Zn2In205 or In4Sn3012 or mixtures
  • the first electrode 20 may comprise, as an alternative or in addition to the materials mentioned: networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.
  • the first electrode 20 may include or be formed of one of the following structures: a network of metallic nanowires, such as Ag, combined with conductive polymers, a network of carbon nanotubes combined with conductive polymers, and / or graphene Layers and composites. Furthermore, the first electrode 20 may comprise electrically conductive polymers or transition metal oxides.
  • the first electrode 20 may, for example, have a layer thickness on iron in a range of 10 nm to 500 nm, for example, from 25 nm to 250 nm, for example from 50 nm to 100 ran.
  • the first electrode 20 may be a first electrical
  • the first electrical potential may be provided by a power source (not shown), for example from a power source or a power source
  • Electrode 20 are indirectly fed via the carrier 12.
  • the first electrical potential may be, for example, the
  • Ground potential or another predetermined reference potential is ground potential or another predetermined reference potential.
  • the organic functional layer structure 22 may include a hole injection layer, a hole transport layer, a
  • the Lochinj edictions slaughter can on or above the first
  • Electrode 20 may be formed.
  • the hole injection layer may comprise or be formed from one or more of the following materials: HAT-CN, Cu (I) pFBz, MoOx, WOx, VOx, ReOx, F4-TCNQ, DP-2, NDP-9, Bi (III) pFBz, F16CuPc; NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine); beta-PB
  • the hole-injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example, in a range of about 30 nm to about 300 nm, for example, in a range of about 50 nm to about 200 nm.
  • Hole transport layer may comprise or be formed from one or more of the following materials: NPB ( ⁇ , ⁇ '- bis (naphthalen-1-yl) -N,' -bis (phenyl) -benzidine); beta-NPB ⁇ , ⁇ '-bis (naphthalen-2-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine); Spiro TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine); Spiro-NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -spiro); DMFL-TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9,9
  • the hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm,
  • nm for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • the one or more emitter layers may be formed, for example with fluorescent and / or phosphorescent emitters.
  • the emitter layer may be organic polymers, organic
  • the emitter layer may be one or more of the following materials on iron or formed therefrom: organic or organometallic
  • Iridium complexes such as blue phosphorescent FIrPic
  • the Emitter materials may suitably be in one
  • Embedded matrix material for example one
  • the first emitter layer may have a layer thickness in a range of about 5 nm to about 50 nm
  • nm for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • Emitter layer have multiple sub-layers that emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression. Alternatively or additionally, it can be provided in the beam path of the primary emission generated by these layers
  • Electron transport layer be formed, for example, be deposited.
  • the electron transport layer may comprise or be formed from one or more of the following materials: NET- 18 2,2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazoie) 2 - (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-hydroxyquinolinolato-1ithium , 4 - (Naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles 1,3-bis [2- (2,2'-bipyridines-6-yl) -1,3 4,4-diphenyl-1,10-phenanthroline (BPhen) 3- (biphenylyl) -4-phenyl-tert-buty
  • the electron transport splitter can have a layer thickness
  • nm in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • Eiektronenin edictions harsh may include or be formed from one or more of the following materials: NDN-26, MgAg, Cs2C03, Cs3P04, Na, Ca, K, Mg, Cs, Li, LiF; 2, 2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1 , 3-oxa-aziazoles, 2,9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H -l, 2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,
  • the electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm.
  • organic functional layer structure 22 having two or more organic functional layer structure units
  • corresponding intermediate layers may be interposed between the organic functional layer structure units
  • Layered structure units may each be formed individually according to one embodiment of the above-described organic functional layered structure 22.
  • the intermediate layer may be formed as an intermediate electrode.
  • the intermediate electrode may be electrically connected to an external voltage source.
  • the external voltage source can, for example, a third electrical potential at the intermediate electrode
  • the intermediate electrode can also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.
  • the organic functional layer structure unit may, for example, have a layer thickness of at most approximately 3 ⁇ m, for example a layer thickness of approximately 1 ⁇ m, for example a layer thickness of approximately approximately 300 nm.
  • the organic optoelectronic component 10 can optionally have further functional layers, for example arranged on or above the one or more
  • Layers can be, for example, internal or external input / output structures, the functionality and. so that the efficiency of the organic optoelectronic component 10 can be further improved.
  • the second electrode 23 may be formed according to any one of the configurations of the first electrode 20, wherein the first electrode 20 and the second electrode 23 are the same or
  • the second electrode 23 may be formed as an anode or as a cathode.
  • the second electrode 23 may have a second electrical connection to which a second electrical potential can be applied.
  • the second electrical potential may be provided by the same or a different energy source as the first electrical potential.
  • the second electrical potential can be different from the first electrical potential.
  • the second electrical potential can be different from the first electrical potential.
  • Difference to the first electrical potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about hr 3V to about 12V.
  • Deckverkapselung 50 may be formed as a translucent or transparent layer.
  • the capsule structure 46 forms a barrier to chemical contaminants or
  • the capsule structure 46 is designed such that it is made of substances, which can damage the organic optoelectronic component 10, for example water, oxygen or solvents, can not or at most be penetrated at very low levels.
  • the capsule structure 46 may be in the form of a single layer, a layer stack of sublayers or a single layer
  • the capsule structure 46 may include or be formed from: metal, ceramic, glass or mixtures thereof,
  • Indium zinc oxide aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and
  • the capsule structure 46 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm,
  • the capsule structure 46 may comprise a high refractive index material, for example one or more high refractive index material (s), for example one
  • the dust particle 38 is enclosed by the powder layer structure 40, in particular the second powder layer 44, and / or by the capsule structure 50.
  • the dust particle 38 does not influence or at least only negligibly influences the mode of operation of the organic optoelectronic component 10. In other words, the organic optoelectronic component 10 is robust against dust particles 38.
  • an input or output layer for example, as an external film (not shown) on the support 12 or as internal decoupling layer ⁇ not shown) in
  • Component 10 may be formed.
  • the input / outcoupling layer may have a matrix and scattering centers distributed therein, wherein the mean refractive index of the input / outcoupling layer is greater than the average refractive index of the layer from which the electromagnetic radiation is provided.
  • one or more can additionally
  • the adhesive layer 36 for example, adhesive and / or paint on iron, by means of which
  • Cover body 38 for example, arranged on the capsule structure 46, for example glued, is.
  • Adhesive layer 36 may be transparent or translucent.
  • the adhesive layer 36 may comprise, for example, particles which scatter electromagnetic radiation, for example light-scattering particles. As a result, the adhesive layer 36 can act as a scattering layer and to a
  • Metal oxide for example silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga 2 Ox) aluminum oxide, or titanium oxide.
  • Other particles may also be suitable, provided that they have a refractive index that is different from the effective refractive index of the matrix of the adhesive layer 36
  • nanoparticles for example, air bubbles, acrylate, or glass bubbles.
  • metallic nanoparticles metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.
  • the adhesive layer 36 may have a layer thickness greater than 1 ⁇ on iron, for example, a layer thickness of several ⁇ .
  • the adhesive may be
  • the adhesive layer 36 may have a refractive index that is less than the refractive index of the cover body 38.
  • the adhesive layer 36 may include, for example, a
  • the adhesive layer 36 may also have a
  • high refractive adhesive for example, has high refractive, non-diffusing particles and has a coating thickness-averaged refractive index
  • the cover body 38 may be formed, for example, by a glass body, a metal foil or a sealed plastic film cover body.
  • the cover body 38 may, for example, by means of a frit connection
  • the cover body 38 may, for example, on the
  • the cover body 38 can optionally be dispensed with, and the cover body 38 can be arranged directly on the edge encapsulation 48 and connected to it firmly and substantially hermetically sealed.
  • Cover body 38 may, for example, a refractive index (for example, at a wavelength of 633 nm) of
  • Fig. 6 shows a step of an embodiment of a method for producing an organic
  • the powder layer structure 40 is formed on the second electrode 23 and / or arranged.
  • the powder may for example comprise powder and / or granules.
  • the powder of the powder layer structure 40 can be sprayed by means of a deposition process,
  • the powder has, for example, by means of physical vapor deposition (PVD) and / or in the form of a press plate on the second electrode 23 are formed and / or arranged.
  • PVD physical vapor deposition
  • the powder has, for example
  • Powder layer structure 40 may also be referred to as a green compact.
  • the dust particle 38 is disposed on the second electrode 23, the dust particle 38 is discharged from the
  • the dust particle 38 is not pressed into the second electrode 23 and / or the organic functional layer structure 22, as it is
  • Powder layer structure 40 heated so that the powder melts in at least a portion 54 and thereby forms a solid closed surface, which forms in particular a water-impermeable and airtight capsule structure 46.
  • the heating may be effected, for example, by means of electromagnetic radiation 52, for example by means of flash exposure, for example flash exposure, and / or by means of
  • glass and metal are materials that prevent the permeation of, for example, air and / or water very well.
  • Electromagnetic radiation 52 determines the depth of the melting zone and thus the depth of the portion 54.
  • the melted portion 54 forms after solidification, the capsule structure 46 and in particular the Deckverkapselung 50 and / or the Randverka sesion 48.
  • electromagnetic energy introduced 52 for example, via non-molten material of the
  • Powder layer structure 44 are discharged and from the
  • organic functional layer structure 22 are kept away.
  • FIG. 6 shows how by means of
  • a portion of the Kapsei Modell 46, in particular the Deck erka se1ung 50 is formed.
  • the portion 54 is selected so that he above the
  • opposite side of the powder layer structure 40 is that it has a predetermined depth to the organic functional layer structure 22 and that he otherwise in a plane parallel to the organic functional
  • Layer structure 22 extends.
  • the portion 54 and subsequently the Deckverkapselung 50 thus extend in Figure 6 in the horizontal direction.
  • the portion 54 may be in vertical
  • the organic functional layer structure 22 may be formed.
  • the portion 54 is selected to be laterally adjacent to the organic functional layer structure 22 on one of the organic functional ones
  • Pul er harsh homemade 40 is that he has a predetermined
  • organic optoelectronic device 10 in Figure 6 extend in the vertical direction.
  • Fig. 7 shows a detailed sectional view of a
  • Powder layer structure 0 have a first sub-layer 56, a second sub-layer 58 over the first sub-layer 58 and a third sub-layer 60 over the second sub-layer 58.
  • the powder layer structure 40 may be only one layer or two or more than three
  • Partial layers 56, 58, 60 have.
  • the sub-layers 56, 58, 60 may, for example, of
  • Powders may be formed, which have different materials and / or different average particle sizes.
  • Grain sizes may be selected so that the sub-layers 56, 58, 60 have different properties, for example, different physical properties.
  • Properties can be, for example, melting points,
  • the sub-layers 56, 58, 60 glass powder in have different compositions and / or different types of glass.
  • individual elements for example indium, gallium or tin, or alloys, for example InSnGa, for example, as a bonding agent and / or matrix material may be mixed into the powder.
  • the third sub-layer 60 may be exterior
  • the second sub-layer 58 may have a higher melting point and serve as a stopping layer for the melting process.
  • the first sub-layer 56 may then optionally have a higher or lower melting point than the second sub-layer 56, for example to serve as an additional stop layer or to serve as a further layer of the capsule structure 46.
  • the melting points of the sub-layers 56, 58, 60 may be adjusted so that only the first sub-layer 56 remains powdery and the second and third sub-layers 58, 60 are fused to the capsule structure 46.
  • the capsule structure 46 then has several, for example two partial layers 58, 60.
  • the materials and the wavelength of the electromagnetic radiation 52 may be so
  • a lower partial layer for example the first partial layer 56
  • a higher partial layer for example the second partial layer 58
  • the first and / or the second sub-layers 56, 58 may have a particularly high heat capacity, so that the heat to be retained during the melting process is rapidly dissipated and kept away from the organic functional layer structure 22. For example, this may cause a temperature of the organic functional
  • Layer structure 22 are kept below 85 ° C.
  • the first sub-layer 56 may be a powder having a particularly small mean grain size on iron, so that the powder of the first sub-layer 56 is particularly good
  • Sub-layers 56, 58, 60 predetermined electrical
  • one or more of the sub-layers 56, 58, 60 may be electrically conductive
  • Sublayers 56, 58, 60 have given optical properties. For example, one or more of the
  • Sub-layers 56, 58, 60 as scattering layers for scattering light, mirror layers for reflecting light or
  • Conversionstiken be designed to convert light with respect to its wavelength.
  • any number of sub-layers 56, 58, 60 can be formed with any desired physical properties.
  • the layer thickness of the powder layer structure 40 is then composed of the layer thicknesses of the partial layers 56, 58, 60.
  • the powder layer structure 40 may have a thickness in a range, for example, from 1 ⁇ to 1000 / im, for example from 2 ⁇ to 500 / im, for example from 5 ⁇ to 100 ⁇ .
  • the sub-layers 56, 58, 60 may have a thickness in a range, for example, from 1 ⁇ to 300 ⁇ , for example, from 2 ⁇ to 100 ⁇ , for example, from 5 ⁇ to 50 ⁇ .
  • the capsule structure 46 may have a thickness in a range, for example, from 1 / im to 1000 ⁇ , for example from 2 to 500 ⁇ , for example from 5 to 100 ⁇ .
  • the mean grain size of the powder can be in one range are for example from 1 to 200 ⁇ , for example from 5 to 50 j , for example from 10 to 20 ⁇ .
  • the capsule structure 46 may have only the cover encapsulation 50 or only the edge encapsulation 48. Furthermore, the production of the capsule structure 46, in particular the melting of the powders of the powder layer structure 40, can take place in several
  • Steps he olgen For example, the
  • Be irradiation intensities or different wavelengths, irradiated Be irradiation intensities or different wavelengths, irradiated. For example, depending on the

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dans divers modes de réalisation donnés à titre d'exemple, l'invention concerne un procédé pour produire un composant optoélectronique organique (10). Ce procédé consiste à former : une première électrode (20) ; une structure fonctionnelle organique en couches (22) au-dessus de la première électrode (20) ; une seconde électrode (23) au-dessus de la structure fonctionnelle organique en couches (22) ; une structure pulvérulente en couches (40), présentant au moins une poudre, latéralement à côté et/ou au-dessus de la structure fonctionnelle organique en couches (22). Ce procédé consiste également à faire fondre au moins une zone partielle (54) de la structure pulvérulente en couches (40) au moyen d'un rayonnement électromagnétique de sorte que cette dernière forme par fusion, au moins dans ladite zone partielle (54), une structure d'encapsulation (46) fermée solide.
PCT/EP2015/053402 2014-02-21 2015-02-18 Procédé pour produire un composant optoélectronique organique, et composant optoélectronique organique WO2015124617A1 (fr)

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DE102014102281.5 2014-02-21
DE102014102281.5A DE102014102281B4 (de) 2014-02-21 2014-02-21 Verfahren zum Herstellen eines organischen optoelektronischen Bauelements und organisches optoelektronisches Bauelement

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DE102015119772A1 (de) * 2015-11-16 2017-05-18 Osram Oled Gmbh Organische Leuchtdiode und Verfahren zur Herstellung einer organischen Leuchtdiode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006028999A1 (de) * 2005-06-28 2007-01-18 Lg. Philips Lcd Co. Ltd. Flachtafeldisplay und Verfahren zu dessen Herstellung
US20090058268A1 (en) * 2005-09-29 2009-03-05 Matsushita Electric Industrial Co., Ltd. Organic el display and method for manufacturing same
US20090206739A1 (en) * 2008-02-18 2009-08-20 Samsung Electronics Co., Ltd. Organic light-emitting diode display device and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
KR101813906B1 (ko) * 2011-03-15 2018-01-03 삼성디스플레이 주식회사 디스플레이 패널

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006028999A1 (de) * 2005-06-28 2007-01-18 Lg. Philips Lcd Co. Ltd. Flachtafeldisplay und Verfahren zu dessen Herstellung
US20090058268A1 (en) * 2005-09-29 2009-03-05 Matsushita Electric Industrial Co., Ltd. Organic el display and method for manufacturing same
US20090206739A1 (en) * 2008-02-18 2009-08-20 Samsung Electronics Co., Ltd. Organic light-emitting diode display device and method of manufacturing the same

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