WO2014185669A1 - 스택 메모리 - Google Patents
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- WO2014185669A1 WO2014185669A1 PCT/KR2014/004207 KR2014004207W WO2014185669A1 WO 2014185669 A1 WO2014185669 A1 WO 2014185669A1 KR 2014004207 W KR2014004207 W KR 2014004207W WO 2014185669 A1 WO2014185669 A1 WO 2014185669A1
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Definitions
- the present invention relates to a technology in which memory devices of different substrates are stacked and electrically connected to each other.
- it relates to a structure in which memory cells of each substrate share a data dump line, and each data dump line is electrically connected to each other.
- DRAM Dynamic Random Access Memory
- the number of devices integrated in one silicon substrate has also reached billions.
- the increased number of devices inevitably leads to an increase in power consumption, as well as a reduction in operating speed due to parasitic effects.
- the circuit designer may lower the power supply voltage supplied to the integrated circuit from the outside or the internal power supply voltage lower than the external power supply voltage inside the integrated circuit. I have responded by making a separate.
- the low internal supply voltage causes the circuit to swing low, greatly reducing dynamic current consumption, which is particularly effective for circuits that drive long data lines.
- the dynamic current consumption I L of the wiring is proportional to the product of the rate of change of the voltage applied to the wiring (dV / dt) and the capacitive load C L of the wiring as in Equation (1).
- memory cells that store previous information are arrayed in rows and columns.
- a path through which binary information enters and out of a memory cell has a parasitic resistance and a parasitic capacitance at each integration density. Increases rapidly.
- FIG. 1A shows a prior art of a stack structure in which multiple substrates are connected and packaged together by bonding wire bonding. This example illustrates the problem.
- FIG. 1A illustrates a cross-sectional view in which the semiconductor substrates 101, 103, and 105 are connected to each other by bonding of bonding wires in a multilayer package 100 having a plurality of semiconductor substrates layered. If each semiconductor substrate is a semiconductor memory device, it will have a block as shown in FIG.
- FIG. 2 assumes that memory cells storing binary information are arranged in a row and column direction to form one matrix (MAT_0 to MAT_31), and 32 matrixes form one large bank (111 to 114).
- MAT_0 to MAT_31 memory cells storing binary information
- 32 matrixes form one large bank (111 to 114).
- Fig. 2 is only one example in which each matrix is arranged inside the semiconductor memory device.
- a matrix is shown in more detail as shown in FIG. 3.
- Each memory cell MC is arrayed in a row and column direction to form a matrix.
- a bit line is commonly connected to a memory cell so that binary information is read or written.
- the path of binary information written to a memory cell is usually in the order of input / output circuits (IO circuits)-global data lines-local data lines-bit lines-memory cells through pins or packages connected to the outside of the semiconductor substrate.
- IO circuits input / output circuits
- the read path is in reverse order.
- FIG. 3 is the semiconductor memory device 101 of the first substrate and the length of the bit line reaches 400 ⁇ m (micrometer), assuming that the capacitance per unit ⁇ m is 1 dB (nanofarad), the total of the bit lines Capacitance C BIT is 0.4 pF (picofarad).
- the total capacitance C is 4pF LOC
- the global data lines for the local data line of the data line length is long, the total capacitance C GLO of global data lines 20 It has a large value of pF.
- the propagation delay time is proportional to the time constant of the path. For convenience of calculation, assuming that the total parasitic resistance of the path is 10 ohms, the time constant of the path is quite large, 244 ps (picoseconds).
- the dynamic current consumption is 1.2mA (milliamperes) by Equation (1). If the data consists of 32 bits, then the total number of pairs of data lines will be 64, resulting in a total dynamic current consumed only from 32-bit pairs of data lines in one cycle, up to 76.8 mA, which is 64 times 1.2 mA. do.
- C PKG which is a parasitic component due to wire bonding or a lead frame of the package, also reaches several to several tens of millimeters, thus exacerbating the above two problems. .
- TSV through silicon via
- the semiconductor device or the semiconductor memory device provided by being stacked in three dimensions it is required to increase the operation speed and reduce the power consumption by reducing the propagation delay time.
- the present invention provides a structure in which a data dump line formed on one substrate is electrically connected to a data dump line formed on another substrate when a plurality of semiconductor substrates including at least one semiconductor memory device are stacked. To provide stack memory.
- a first type of memory cell is provided on a first substrate, a second type of memory cell is provided on a second substrate, and these memory cells are electrically connected to each other by a data dump line. Connected.
- the memory cells of the first type or the second type may have a switch added to the data dump line.
- Each data dump line may be electrically connected, but may be in direct contact with conductive materials such as metal, and may use a well-known technique such as DBI, and the electrical connection may be through the pad region.
- the conductive material in the pad region may be wider than the lines formed by the conductive material forming the data dump line.
- memory cells of the first type or the second type may be volatile or nonvolatile.
- a dump switch for selective connection may be added between the data dump line and the pad.
- a core circuit including a memory cell, a sense amplifier column selection circuit, and the like is disposed on one substrate, and an input / output circuit for input / output is disposed on another substrate, and the substrates may be connected to each other.
- Data dump lines may be included.
- the memory cells of the first type or the second type may have a switch added to the data dump line.
- the stack memory when memory cells belonging to the first substrate and the second substrate each exchange data with each other by a data dump line, these data dump lines exchange data with the outside of the substrate. It may be present separately from a bit line or a word line, which is a necessary line.
- the data dump line when a plurality of semiconductor substrates are stacked, data transfer speed between each substrate is increased and power consumption is also reduced.
- Data dump lines between boards correspond to one-to-one, or even if a plurality of data dump lines correspond to each other, the data dump line can be effectively dumped by a switch that can be used as a cache memory.
- Figure 1a shows a conventional configuration for connecting several substrates through bonding wires.
- FIG. 1b shows a conventional configuration for connecting several substrates through through silicon vias (TSV).
- TSV through silicon vias
- FIG. 5a shows an embodiment of the present invention.
- Figure 5b shows another embodiment of the present invention.
- Figure 5c shows another embodiment of the present invention.
- FIG. 6 is a cross-sectional view of one of the embodiments of the present invention.
- FIG. 7B is another embodiment of the present invention derived from FIG. 7A.
- FIG. 7C is another embodiment of the present invention derived from FIG. 7A.
- FIG. 8 is a plan view showing an embodiment of the present invention.
- 9 is another embodiment of the present invention having a bit line and a data dump line separately.
- FIG. 10 is another embodiment of the present invention in which a memory cell portion and a peripheral circuit portion are disposed on each substrate.
- 11 is another embodiment of the present invention showing that three or more substrates may be stacked.
- a plurality of expressions for each component may be omitted.
- a configuration consisting of a plurality of switches or a plurality of signal lines may be expressed as 'switches' or 'signal lines', or may be expressed in the singular as 'switches' or 'signal lines'.
- the switches operate in a mutually complementary manner, and in some cases, they may operate alone.
- the signal line may also be composed of a plurality of signal lines having the same property, such as address signals or data signals. This is because it does not have to be divided into singular and plural. In this respect, this description is valid. Therefore, similar expressions should be construed in the same sense throughout the specification.
- 5A is a diagram illustrating one of various embodiments of the present invention.
- the memory cell MC may be a volatile memory device such as static random access memory (SRAM) or dynamic random access memory (DRAM) or a nonvolatile memory device such as flash memory.
- SRAM static random access memory
- DRAM dynamic random access memory
- flash memory a nonvolatile memory device
- Memory cells of the first substrate are electrically connected corresponding to memory cells of the second substrate on a cell basis.
- This electrical connection may be a technique known as direct bond interconnect (DBI), or may be using other techniques.
- the memory cell MC is simply represented as a block, but may be formed of a plurality of transistors such as SRA, or may have a form in which several transistors are connected in series, such as a NAND flash. Even so, the connection structure through the data dump line does not change, and all embodiments of the present invention are the same below.
- the lines of the conductive material forming the data dump line of the first substrate and the data dump line of the second substrate may be extremely short in width, the data dump line of the first substrate and the data dump line of the second substrate may be easily connected.
- pad regions having a wider width than the conductive material lines of the data dump line inside the memory cell array may be formed and bonded to each other.
- the data dump line of the first substrate and the data dump line of the second substrate also have the same pitch interval.
- the embodiment may be extended as shown in FIG. 5B.
- 5A is connected to each other in units of memory cells, while FIG. 5B is connected to each other in columns.
- the pads connecting the data dump lines to each other need not be in the middle of the memory cell array but can be placed in the vicinity of the sense amplifier or the circuit for column selection.
- the areas where the data dump lines are bonded to each other are more preferably provided in a so-called core circuit portion to avoid the memory cell array.
- 5A and 5B may be implemented by adding a switch between the pad and the data dump line as shown in FIG. 5C.
- the column switches SW11 to SW13 and SW21 to SW23 of each substrate may be appropriately selected by an address signal or other selection signal when data is transferred between the first substrate and the second substrate, and only on one substrate. It may exist. Column switches add the ability to individually select data dump lines on each board.
- a switch existing between each data dump line and the pad may be additionally present.
- a structure connected in units of memory cells as shown in FIG. 5A will be referred to as an 'A-type'
- a structure connected in units of columns as shown in FIG. 5B will be referred to as a 'B-type'
- the added structure will be referred to as 'C-type'.
- FIG. 6 is a cross-sectional view illustrating the embodiment of FIG. 5A.
- Gate regions 211 and 221 and impurity diffusion regions 212 and 222 for forming a semiconductor active device are shown in the first and second substrates 210 and 220.
- the first metal layers 213 and 223 and the second metal layers 214 and 224 are drawn.
- the impurity regions 212 and 222, the first metal layers 213 and 223, and the second metal layers 214 and 224 may be connected by a well-known TSV method.
- the semiconductor active device is a volatile or nonvolatile memory device, it may be at least some of the transistors representing the memory cells.
- the first substrate and the second substrate are made separately and then bonded to each other. In FIG.
- memory cells of both substrates are connected to each other through a pad 215 of a first substrate and a pad 225 of a second substrate.
- the technology used to connect the pad may be a DBI technology
- the conductive material used for the connection may be a semiconductor material such as tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), molybdenum (Mo), or the like.
- Metallic materials are preferred but need not be limited thereto.
- a material having suitable electrical conductivity may be used, such as polysilicon having sufficient electrical conductivity.
- DBI connection it can be made at room temperature or higher than room temperature, and in the case of non-DBI connection, any connection technology between conductive materials used in semiconductor manufacturing process may be used.
- the width of the conductive material of each data dump line is greater than the width of the lines.
- Figure 7a shows another embodiment of the present invention.
- 7A corresponds to the 'A-type' as mentioned above.
- data dump lines of a plurality of second substrates may be connected to a data dump line of one first substrate according to the size of a memory cell or a type of memory cell. If the data dump lines of four second boards are connected to the data dump line of one first board, the pitch gap of the data dump lines of the first board may be different from the pitch gap of the data dump lines of the second board. have.
- the memory cell pitch of one substrate is an integer multiple of the memory cell pitch of the other substrate. This can be understood in more detail in FIG. 8.
- FIG. 7A may be extended in column units as shown in FIG. 7B and may be implemented as a 'B-type', by adding switches SW31, SW2, SW41 to SW44, and SW51 to SW54 to the first substrate and the second substrate. It may be implemented as 'C-type'. Depending on their use, each switch can operate at different timings or at the same timing.
- FIG. 8 illustrates a case in which four memory cells MC belonging to a second substrate correspond to one memory cell MC belonging to a first substrate as shown in FIG. 7A, and a switch is added to each of the memory cells of the second substrate. It is shown in a flat concept. As described above, when the switch is added between the memory cell and the data dump line, it may be added to both the first substrate and the second substrate, but may be added only at one place as shown in FIG. Thus, if the area of the memory cell of the first substrate is four times the area of the memory cell of the second substrate, the pitch in the column direction is preferably doubled.
- each memory cell has a bit line BL and a data dump line separately. Although not described separately, all other embodiments described above may be provided with a bit line and a data dump line separately.
- the bit line BL and the word line WL are not used for data dump between the first substrate and the second substrate, but mainly used when receiving or transferring data from the outside of the first substrate or the outside of the second substrate. In some cases, the bit line and the word line may exist only on either the first substrate or the second substrate.
- the memory cell of the first substrate or the memory cell MC of the second substrate be a latch type circuit.
- Each of the memory cells of the second substrate has switches connected to bit lines, which are driven by word line (WL) signals.
- the data dump may be done from the first substrate to the second substrate, or vice versa.
- a switch may be provided between the memory cells of the second substrate and the bit line.
- the dump switches dump1 to dump4 and the bit line switches for dumping data are separately provided, an operation of writing to or reading from the outside of the second substrate is performed through the bit line switches. Since the data dump line and the bit line are separated from each other, external read and write operations are performed independently of the data dump line.
- FIG. 10 is another embodiment of the present invention.
- An array of memory cells MC, a sense amplifier, and a write driver are formed on the first substrate, and a circuit (IO circuit) for data input / output is formed on the second substrate.
- circuits called core circuits such as memory cells, sense amplifiers, and write circuits, are connected to one substrate, and input / output circuits, such as peripheral circuits, are different. It can also be placed on a substrate.
- three or more substrates may also be stacked.
- the third substrate 230 overlaps the first substrate 210, and is electrically connected to the pad 217 of the first substrate 210 through the pad 235 of the third substrate.
- the gate 231 and the diffusion region 232 of an active element such as a transistor are separately displayed.
- the number of stacked semiconductor substrates is not limited, and as the plurality of substrates overlap, the number of semiconductor devices that can be concentrated in a narrow space increases.
- the sense amplifiers disposed adjacent to the memory cells, the circuits related to column selection, and the circuits related to row selection are appropriately omitted for convenience of description.
- any of the embodiments of the present invention when data is dumped from the memory cell of the first substrate to the memory cell of the second substrate, or when data is dumped in the opposite direction, local data extending along the word line direction of the memory cell array. There is no need to overcome the parasitic capacitance of the line and the so-called parasitic capacitance of the so-called global data lines connecting each array matrix. Therefore, as in the conventional example described above, assuming that the total capacitance of one data dump line is 0.4 pF (picofarad) and the equivalent parasitic capacitance is 10 ohms, the data dump line of the first substrate and the data of the second substrate are assumed. Even if the dump lines are electrically connected to each other, the time constant is only 8ps (picoseconds). This enables data to be delivered tens of times faster with less power consumption.
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Abstract
Description
Claims (14)
- 제1기판에 행방향과 열방향으로 매트릭스 형태로 어레이(array)된 제1타입의 메모리 셀;상기 제1타입의 메모리 셀로 입출력되는 데이터가 전달되고, 상기 제1타입의 메모리 셀 가운데 최소한 하나의 메모리 셀에 공통적으로 연결된 제1 데이터 덤프라인;제2기판에 행방향과 열방향으로 매트릭스 형태로 어레이(array)된 제2타입의 메모리 셀; 및상기 제2타입의 메모리 셀로 입출력되는 데이터가 전달되고, 상기 제2타입의 메모리 셀 가운데 최소한 하나의 메모리 셀에 공통적으로 연결된 제2 데이터 덤프라인;을 구비하고상기 제1 데이터 덤프라인과 상기 제2 데이터 덤프라인이 전기적으로 연결된 것을 특징으로 하는 스택 메모리.
- 제1항에 있어서,상기 제1기판과 상기 제1타입의 메모리 셀 사이 또는 상기 제2기판과 상기 제2타입의 메모리 셀 사이에 형성된 스위치;를 더 포함하는 것을 특징으로 하는 스택 메모리.
- 제1항 또는 제2항에 있어서, 상기 전기적 연결은,상기 제1 데이터 덤프라인의 도전성 물질과 상기 제2 데이터 덤프라인의 도전성 물질의 직접적인 접촉에 의해 이루어지는 것을 특징으로 하는 스택 메모리.
- 제1항 또는 제2항에 있어서, 상기 전기적 연결은,상기 제1 데이터 덤프라인 또는 상기 제2 데이터 덤프라인을 이루는 상기 도전성 물질의 면적보다 더 넓은 면적의 도전성 패드에 의해 이루어지는 것을 특징으로 하는 스택 메모리.
- 제1항 또는 제2항에 있어서,상기 제1기판과 상기 제2기판이 복층구조로 겹쳐진 것을 특징으로 하는 스택 메모리.
- 제1항 또는 제2항에 있어서,상기 제1타입의 메모리 셀 또는 상기 제2타입의 메모리 셀 가운데 최소한 하나 이상의 메모리 셀은, 상기 제1 데이터 덤프라인 또는 상기 제2 데이터 덤프라인과의 사이에 스위칭 소자가 부가된 것을 특징으로 하는 스택 메모리.
- 제1항 또는 제2항에 있어서,상기 제1타입의 메모리 셀과 상기 제2타입의 메모리 셀은 크기가 서로 다른 것을 특징으로 하는 스택 메모리.
- 제1항 또는 제2항에 있어서,상기 제1타입의 메모리 셀 또는 상기 제2타입의 메모리 셀 가운데 어느 하나는 비휘발성 또는 휘발성인 것을 특징으로 하는 스택 메모리.
- 제1항 또는 제2항에 있어서,상기 제1기판에 위치하며, 상기 제1데이터 덤프라인과는 별도로 상기 제1타입의 메모리 셀을 열방향으로 연결하는 제1 비트라인;상기 제1기판에 위치하며, 상기 제1데이터 덤프라인과는 별도로 상기 제1타입의 메모리 셀을 행방향으로 연결하는 제1워드라인;상기 제2기판에 속하며, 상기 제2데이터 덤프라인과는 별도로 상기 제2타입의 메모리 셀을 열방향으로 연결하는 제2비트라인; 및상기 제2기판에 속하며, 상기 제2데이터 덤프라인과는 별도로 상기 제2타입의 메모리 셀을 행방향으로 연결하는 제2워드라인;을 구비하는 것을 특징으로 하는 스택 메모리.
- 행방향과 열방향으로 어레이(array)된 메모리 셀, 상기 메모리 셀에서 출력되는 데이터를 감지하는 감지증폭기 및 상기 메모리 셀로 입력되는 데이터를 구동하는 쓰기 구동기가 배치된 제1기판; 및상기 메모리 셀로 입출력되는 데이터를 전달하는 입출력회로;가 배치된 제2기판;을 구비하고,상기 제1기판과 상기 제2기판은 상기 제1기판에 형성된 제1 데이터 덤프라인과 상기 제2기판에 형성된 제2 데이터 덤프라인에 의해 전기적으로 연결된 것을 특징으로 하는 스택 메모리.
- 제10항에 있어서 상기 전기적 연결은,상기 제1 데이터 덤프라인의 도전성 물질과 상기 제2 데이터 덤프라인의 도전성 물질의 직접적인 접촉에 의해 이루어지는 것을 특징으로 하는 스택 메모리.
- 제10항에 있어서, 상기 전기적 연결은,상기 제1 데이터 덤프라인 또는 상기 제2 데이터 덤프라인을 이루는 도전성 물질의 면적보다 더 넓은 면적의 도전성 패드에 의해 이루어지는 것을 특징으로 하는 스택 메모리.
- 제10항에 있어서,상기 제1기판과 상기 제2기판이 복층구조로 겹쳐진 것을 특징으로 하는 스택 메모리.
- 제10항에 있어서,상기 메모리 셀 가운데 최소한 하나 이상의 메모리 셀은 상기 제1 데이터 덤프라인과의 사이에 스위칭 소자가 부가된 것을 특징으로 하는 스택 메모리.
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- 2014-05-12 US US14/891,635 patent/US9406652B2/en not_active Expired - Fee Related
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US9406652B2 (en) | 2016-08-02 |
KR101456503B1 (ko) | 2014-11-03 |
US20160133603A1 (en) | 2016-05-12 |
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