WO2014180842A1 - Verfahren zur herstellung eines wellenlängenkonversionselements, wellenlängenkonversionselement und bauelement aufweisend das wellenlängenkonversionselement - Google Patents
Verfahren zur herstellung eines wellenlängenkonversionselements, wellenlängenkonversionselement und bauelement aufweisend das wellenlängenkonversionselement Download PDFInfo
- Publication number
- WO2014180842A1 WO2014180842A1 PCT/EP2014/059231 EP2014059231W WO2014180842A1 WO 2014180842 A1 WO2014180842 A1 WO 2014180842A1 EP 2014059231 W EP2014059231 W EP 2014059231W WO 2014180842 A1 WO2014180842 A1 WO 2014180842A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wavelength conversion
- conversion element
- layer
- semiconductor chip
- punched
- Prior art date
Links
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- 238000000034 method Methods 0.000 title claims description 72
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- 230000005693 optoelectronics Effects 0.000 claims abstract description 13
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- 239000004065 semiconductor Substances 0.000 claims description 38
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- 229910052605 nesosilicate Inorganic materials 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00932—Combined cutting and grinding thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Definitions
- Wavelength conversion element and component comprising the wavelength conversion element
- the invention relates to a method for producing a wavelength conversion element
- Wavelength conversion element and a device containing the wavelength conversion element.
- LEDs Light-emitting diodes
- a narrow wavelength range which usually produces a monochrome light impression.
- an LED is usually followed by dyes, which partially emit the light emitted by the LED in light with another
- wavelength-converting dyes are usually embedded in wavelength conversion layers, which must be separated into wavelength conversion elements in order to be used in the optoelectronic component can. The singulation can not yet with
- Specify wavelength conversion element Other objects are to provide a wavelength conversion element with improved properties and to provide a device comprising such a wavelength conversion element.
- Wavelength conversion element specified the following
- Process steps include:
- Carrier layer is arranged,
- step A) is first a
- Wavelength conversion layer made what
- Wavelength conversion element is meant in each case a largely parallel arrangement of the surfaces.
- the wavelength conversion element can be a
- Main extension plane in which it extends in lateral directions. Perpendicular to the main extension plane, in the vertical direction, that can
- Wavelength conversion element have a thickness.
- Thickness of the wavelength conversion element is preferably small compared to the maximum extent of the
- Wavelength conversion element in a lateral direction A main plane of the wavelength conversion element forms the first surface of the wavelength conversion element.
- Wavelength conversion layer apply equally to the wavelength conversion element, which from the
- Wavelength conversion layer is singled.
- Wavelength conversion layer instead.
- the wavelength conversion layer comprises at least one wavelength conversion substance which is embedded over the whole area in a matrix material.
- Wavelength conversion substance may be particularly suitable, primarily light generated by a semiconductor chip
- Primary radiation to absorb at least partially and as secondary radiation with an at least partially from the Primary radiation to different wavelength range
- the primary radiation and the secondary radiation may have one or more wavelengths and / or
- wavelength ranges in an infrared to ultraviolet wavelength range in particular in one
- the spectrum of the primary radiation and / or the spectrum of the secondary radiation can be narrow-band, that is to say that the primary radiation and / or the secondary radiation have a monochromatic or
- the spectrum of the primary radiation and / or the spectrum of the secondary radiation may alternatively also be broadband, that is, the primary radiation and / or the
- Secondary radiation may have a mixed-color wavelength range, wherein the mixed-color wavelength range may have a continuous spectrum or a plurality of discrete spectral components with different wavelengths.
- the primary radiation and the secondary radiation can
- the wavelength conversion element may be the
- the wavelength conversion substance may have one or more of the following materials: garnets of the rare earths and the alkaline earth metals, for example
- YAG Ce3 +, Nitrides, Nitridosilicates, Sione, Sialone,
- Aluminates, oxides, halophosphates, orthosilicates, sulfides, vanadates and chlorosilicates are aluminates, oxides, halophosphates, orthosilicates, sulfides, vanadates and chlorosilicates. Furthermore, the
- Wavelength conversion material additionally or alternatively have an organic material selected from a group may be selected which comprises perylenes, benzopyrene, coumarins or rhodamines and azo dyes.
- the wavelength conversion layer may be suitable as a wavelength conversion substance embedded in the matrix material
- the matrix material may surround or contain the wavelength conversion substance or be chemically bonded to the wavelength conversion substance.
- the wavelength conversion substance can be distributed homogeneously in the matrix material.
- Wavelength conversion substance may, for example, be shaped in the form of particles which may have a size of less than or equal to 100 ⁇ m and in particular between 2 ⁇ m and 30 ⁇ m.
- Matrix material comprise a transparent matrix material in which the wavelength conversion substance is embedded.
- the transparent matrix material may be selected from a group comprising glass, siloxanes, epoxies, acrylates,
- Methylmetacrylate imides, carbonates, urethanes or derivatives thereof in the form of monomers, oligomers or polymers and further mixtures, copolymers or compounds thereof.
- the matrix material may be
- Epoxy resin polymethyl methacrylate (PMMA), polycarbonate,
- Polyacrylate, polyurethane or a silicone resin such as
- Polysiloxane or mixtures thereof include or be.
- the matrix material may comprise a silicone resin or be silicone. Silicone may be due to its
- thermoplastic properties on the one hand be easy to process and on the other hand one for one Wavelength conversion element required
- the wavelength conversion layer may also be one
- Silicone cover In the case of a silicone, by means of the plasma Si-O groups and / or Si-OH groups on the surface treated with the plasma
- Wavelength conversion layer are generated. It is also possible that the wavelength conversion layer is a
- the wavelength conversion substance may be present in the matrix material with a degree of filling which is for example ⁇ 15% and ⁇ 80%.
- the wavelength conversion layer comprises a first one
- the second surface or the underside is arranged on a carrier layer.
- Process step B) is treated, can be an oxidative plasma, for example an oxygen and / or ozone plasma.
- oxidative plasma for example an oxygen and / or ozone plasma.
- "treating" is to be understood as meaning that the first surface is exposed to the plasma until a change in the surface occurs
- Change can be brought about, for example, by a chemical reaction by bringing the plasma to the first
- Wavelength conversion layer reacts. It can in the Case of a silicone-containing matrix material, for example C m H n groups are oxidized, so that S1O 2 remains on the surface.
- the change can also be made by a silicone-containing matrix material, for example C m H n groups are oxidized, so that S1O 2 remains on the surface.
- the change can also be made by a silicone-containing matrix material, for example C m H n groups are oxidized, so that S1O 2 remains on the surface.
- the change can also be made by a silicone-containing matrix material
- Process step C) are punched.
- oxygen is incorporated into the sticky material of the wavelength conversion layer by means of the oxygen and / or ozone plasma. This causes the sticky material of the
- the glazed surface may in this case be the first surface and / or the second surface.
- the wavelength conversion layer then contains a sticky material and a glass material, wherein the
- the course of the reduction of the stickiness can be determined by the course of the reduction of the adhesion. In other words, the less sticky the material is, the lower it can be Adhesion of impurities.
- lower adhesion after glazing may indicate a reduced surface roughness compared to the surface roughness of the glazed surface prior to glazing.
- the glazing may in particular have a certain penetration depth.
- the glazing may in particular have a certain penetration depth.
- Wavelength conversion layer can, after glazing with the plasma treatment in the vertical direction, that is perpendicular to the glazed surface, to a
- Penetration depth which may correspond, for example, at most 2%, preferably at most 1%, the thickness of the wavelength conversion layer, be vitrified, ie have a glass.
- the penetration depth is at least 30 nm and at most 600 nm.
- the wavelength conversion layer can therefore be along a direction which is determined in the context of the
- the wavelength conversion layer has a mixture of the vitrified and the non-vitrified material
- Wavelength conversion layer on. at least the
- Wavelength conversion layer punched wherein at least one wavelength conversion element is obtained. Whether one or more wavelength conversion elements in one
- Process step C) depends on whether the punching tool used only one
- Wavelength conversion element or more
- Wavelength conversion elements can punch simultaneously. This also applies to the following comments on the Procedure, even if not explicitly “at least one” or “at least one” in relation to the manufactured
- Wavelength conversion element is specified.
- the method step C) can be repeated several times, so that from a provided in step A) and treated in step B) with a plasma
- Wavelength conversion elements are isolated, the provision and the plasma treatment of the
- the wavelength conversion element comprises a first one
- Wavelength conversion layer correspond. Furthermore, the wavelength conversion element comprises side edges which form edges together with the first surface or with the second surface.
- the method step C) is thus a singling of the wavelength conversion element from the wavelength conversion layer.
- the carrier layer may after the
- Plasma treatment of the first surface take place as long as the carrier layer is still on the second surface of the
- Wavelength conversion layer is arranged. This can possibly complicated mounts for the Make wavelength conversion layer during the plasma treatment superfluous.
- Process step B that are removed before the plasma treatment of the first surface of the wavelength conversion layer.
- Wavelength conversion layer can be treated with a plasma.
- This can be special
- Wavelength conversion layer with a plasma the statements on the plasma treatment of the first surface of the wavelength conversion layer apply analogously. Furthermore, in process step C) the
- Wavelength conversion layer are punched and the
- Wavelength conversion element are collected in a container.
- the wavelength conversion element treated on the first and second surfaces with a plasma is obtained without carriers in a container.
- This container can be used to store
- the wavelength conversion element can be applied to an auxiliary layer or auxiliary layer and subsequently to a semiconductor chip to which it is to be applied,
- An auxiliary layer can be a removable film, for example a film
- the process step C) can be repeated several times, so that a plurality of wavelength conversion elements are collected in the container and, as for the one
- Wavelength conversion element executed can be processed further. According to a further embodiment, before or after the
- the auxiliary layer may be a
- redetachable film for example a thermal release film or a UV release film.
- Wavelength conversion element in step C) is punched onto an auxiliary layer.
- the method step C) can be repeated several times, so that several
- Auxiliary layer are arranged or punched.
- the punching tool is moved in parallel relative to the auxiliary layer, so that in the next method step C)
- Wavelength conversion element is located.
- Wavelength conversion elements can be tested, sorted and transported.
- the wavelength conversion element (s) may be applied with their first surface on a new auxiliary layer for subsequent transfer, with the auxiliary layer being removed on the side of the second surface of the wavelength conversion elements.
- Wavelength conversion layer necessary. According to a further embodiment, the
- Wavelength conversion layer and the carrier layer are Wavelength conversion layer and the carrier layer
- Carrier layer arranged received.
- Wavelength conversion layer treated with plasma The side edges of the stamped carrier layer and the wavelength conversion element arranged thereon can be arranged congruently one above the other.
- step C) the punched
- Carrier layer are arranged with the side facing away from the wavelength conversion element side on an adhesive layer.
- the wavelength conversion element disposed on the stamped support layer which in turn is disposed on an adhesive layer, is obtained.
- the method step C) can be repeated several times, so that a plurality of wavelength conversion elements, which are each arranged on a stamped carrier layer, are obtained. Furthermore, the several
- Carrier layers are arranged, in process step C) are arranged together on an adhesive layer. For this purpose, after each performed process step C) the
- Adhesive layer moves relative to the punch parallel, so that in the next step C) obtained
- Wavelength conversion element which is arranged on a stamped carrier layer, on an area of
- Adhesive layer is arranged, free from punched
- Carrier layers and wavelength conversion elements is.
- Auxiliary layer can be a removable film like
- a thermal release film or a UV release film can be used.
- Wavelength conversion element which is arranged with the first surface on the auxiliary layer, obtained. It can be tested below for its properties and be sorted and optionally applied to a new auxiliary layer to be subsequently transported.
- the auxiliary layer can be applied to all wavelength conversion elements arranged on the adhesive layer and the adhesive layer and the punched carrier layers can be removed from all wavelength conversion elements. It can be very sticky or elastic
- Matrix materials are punched in the wavelength conversion layer, which is controlled by the punching possibly rounded edges of the wavelength conversion elements on one side, for example on the
- Wavelength conversion elements are located and sharp edges controlled on the other side, for example on the first surface of the wavelength conversion element .
- Sharp edges are here and hereinafter understood to include approximately a 90 ° angle, from the first and / or second surface of
- Wavelength conversion element and the side edge is formed.
- a sharp edge is particularly advantageous if the wavelength conversion element is surrounded by a potting, which is to be flush with one of the surfaces of the wavelength conversion element.
- a punching tool which has an inner shape which is selected from quadrangular or approximately quadrangular, round, quadrangular or approximately quadrangular with at least one recess and round with at least one recess.
- Other Shapes such as polygonal, oval or asymmetrical shapes, each with or without recesses are also conceivable.
- a recess it is to be understood here and below that there is a recess on the edge, in particular on the circumferential edge, of the wavelength conversion element, which is produced by the inner shape of the punching tool
- a recess can also be present within the surface of the wavelength conversion element. For example, there may be two recesses at the edge of a wavelength conversion element
- Recesses may for example be arranged side by side or opposite each other.
- Recesses can be used by the
- Wavelength conversion element to allow access to an underlying semiconductor chip in an optoelectronic device and to use this access, for example, for contacting the semiconductor chip.
- Wavelength conversion layer are punched and thus wavelength conversion elements are separated, without damaging the wavelength conversion substance or the matrix material contained therein. Furthermore, this is a cost-effective production method of
- Wavelength conversion elements with sharp edges for a later encapsulation which with a surface of the
- Manufacturing process of the wavelength conversion element is also cheaper than the production of
- Ceramic plates used as wavelength conversion plates The punching process will make you better Obtain surfaces and a better edge quality than this is possible, for example by means of a screen printing process.
- the wavelength conversion element may have sharp edges on the side of the first and / or second surface
- the second surface of the wavelength conversion element with the side edges of the wavelength conversion element approximately form a 90 ° angle.
- the wavelength conversion element may have a thickness selected from the range of 30 ym to 300 ym.
- the thickness can be specified along a direction which runs perpendicular to the first surface of the wavelength conversion layer within the scope of the manufacturing tolerances.
- Wavelength conversion elements are produced. Furthermore, the wavelength conversion element can have a surface
- Embodiments which is arranged with the first surface or the second surface on the semiconductor chip in the beam path of the semiconductor chip.
- Wavelength conversion element is thus on the Semiconductor chip arranged, wherein between the upper side of the semiconductor chip and the wavelength conversion element, a connection layer may be arranged, which serves for fixing the wavelength conversion element on the semiconductor chip.
- the light-emitting semiconductor chip can be any suitable semiconductor chip.
- a light emitting diode having one based on an arsenide, phosphide and / or nitride compound semiconductor material system
- the optoelectronic component with the semiconductor chip and the wavelength conversion element can continue
- lead frame a support and / or in a housing and by means of electrical connections, for example via a so-called lead frame
- the wavelength conversion element can have at least one recess as described above, which can be arranged above the upper side of the semiconductor chip, and in which a contact region of the semiconductor chip is arranged. In other words, through the recess a
- Wavelength conversion element be accessible through, so that the semiconductor chip through the
- Wire bonding such as a bonding contact
- the optoelectronic component may further comprise a bonding wire which is connected through the recess to the contact region of the semiconductor chip is.
- the contact region can be in an edge region of the top or in a distance from the edge
- Center region of the top of the semiconductor chip may be arranged, and accordingly also the recess of the
- Wavelength conversion element at the edge so in particular in the region of the peripheral edge, or be arranged in a central region.
- the component may have a casting surrounding the semiconductor chip, which may be connected to the second surface or the first surface of the semiconductor chip
- Wavelength conversion element is flush.
- Wavelength conversion element has sharp edges on the side of the second surface and / or the first surface.
- the encapsulation thus surrounds the semiconductor chip and the
- the potting can be any suitable material.
- Alternative materials for potting may be selected from S1O 2 , Al 2 O 3 and BaS0 4 , each of which may be blended with silicone.
- Figure la shows the schematic side view of a
- Figure lb shows the schematic plan view of a
- Figures 2a to 2c show schematically steps of the inventive method according to a first embodiment
- Figures 3a to 3c show schematically steps of
- FIGS. 4a to 4c schematically show steps of the FIG.
- FIGS. 5a to 5d show microscopic images of a
- Wavelength conversion element made according to a first embodiment of the method
- FIGS. 6a to 6g show electron micrographs of a wavelength conversion element produced according to a first embodiment of the method
- FIGS. 7a to 7e show microscopic images of a
- Wavelength conversion element which is produced according to a second embodiment of the method
- Figures 8a to 8f show electron micrographs of a wavelength conversion element, which is made according to a second embodiment of the method.
- the same or equivalent components may each have the same
- Figure la shows the schematic side view of a
- Wavelength conversion element 10 is connected to the first
- Wavelength conversion element 10 has a recess 11, through which a contact 4 leads to the semiconductor chip 2.
- a second contact 3 leads through the carrier 1 to the semiconductor chip 2.
- the wavelength conversion element 10 has a second recess 11, through which the contact 3 to the
- both contacts 3 and 4 could lead through the carrier 1 to the semiconductor chip 2. In that case, that would
- Wavelength conversion element 10 no recesses
- the potting 5 may be, for example, an opaque or slightly transparent, preferably highly reflective Ti02-containing potting.
- the wavelength conversion element 10 may be one or more of the above
- Wavelength conversion materials included. Of the
- Semiconductor chip 2 emitted primary radiation thus strikes the wavelength conversion element 10, which at least partially converts the primary radiation emitted by the semiconductor chip into a secondary radiation.
- Figure lb shows the schematic plan view of
- Opto-electronic device with the encapsulation 5 and the second surface 10b of the wavelength conversion element.
- Wavelength conversion element 10 can be seen, through which the contact 4 is passed.
- Figures 2a to 2c show a first embodiment of the method for producing a
- FIG. 2 a shows a wavelength conversion layer 100 which is treated on both sides with a plasma 50 (schematically indicated by a dashed arrow), for example an oxygen plasma. This is a
- the wavelength conversion layer 100 is arranged on a carrier 200 (not shown here) and initially only the first surface 100a of the
- Wavelength conversion layer is treated with a plasma 50, then the carrier 200 is removed and finally the second surface 100 b, or bottom, is treated with the plasma 50.
- FIG. 2b shows the wavelength conversion layer 100 which is fastened in a punching tool 40 with feet 42 and a cavity 41.
- the punching tool itself comprises the punch 20 and the handle 30, which are passed through the cavity 41 through the punching tool 40.
- FIG. 2c shows the punch 20, which is passed through the punching tool 40, and which in the process the
- Wavelength conversion element 10 has punched out.
- Wavelength conversion element 10 is collected in the container 60 and can be further transported and / or processed from there into the container or arranged on a transport layer.
- the punching shown in Figure 2c can be repeated several times, after each implementation, the wavelength conversion layer 100 is shifted so that another
- Wellehavenkonversionselement 10 can be punched out.
- the obtained wavelength conversion elements 10 can be punched out.
- FIG. 3 a shows the wavelength conversion layer 100 which is treated on the first surface 100 a with a plasma 50. This is again a simplified representation, since the
- Wavelength conversion layer 100 may be disposed on a support 200, wherein the carrier 200 after the
- Plasma treatment can be removed.
- FIG. 3b again shows the punching tool 40 in which the wavelength conversion layer 100 is arranged.
- the punching tool 40 with the feet 42 is arranged on an auxiliary layer 70, for example a thermorelease film.
- the wavelength conversion element 10 with its second surface 10 b is arranged directly on the auxiliary layer 70.
- Wavelength conversion element is on the of the
- Wavelength conversion element On this auxiliary layer 70, the wavelength conversion element 10 can be tested, optionally sorted and arranged on a new auxiliary layer 70.
- the punching process shown in FIG. 3b can be repeated a number of times, with the wavelength conversion layer 100 being displaced after each pass in order to obtain a new wavelength conversion element 10, and the auxiliary layer 70 also being displaced to the new one
- Wavelength conversion element 10 on a region of
- Wavelength conversion elements 10 is (not shown here).
- FIG. 4a shows a third embodiment of the method.
- the wavelength conversion layer 100 is disposed on a carrier 200.
- Wavelength conversion layer is unilaterally of a
- both the carrier layer 200 and the plasma-treated wavelength conversion layer 100 are arranged in the punching tool 40.
- Punching tool 40 is arranged with the feet 42 on an adhesive layer 80. After punching are punched Carrier layer 220 and the wavelength conversion element 10 disposed on the adhesive layer 80, wherein the
- Wavelength conversion element 10 with its second
- FIG. 4c shows that on the first surface 10a facing away from the stamped carrier layer 220
- Wavelength conversion element 10 an auxiliary layer 70 is disposed, and the adhesive layer 80 together with the punched support layer 220 of the
- Wavelength conversion element is subtracted.
- FIG. 4c already shows a plurality of wavelength conversion elements 10 and punched carrier layers 220, which after
- the punching tool can also be formed so that with a
- Wavelength conversion elements are obtained. This is not shown here for the sake of clarity.
- wavelength conversion elements made by embodiments of the method.
- a wavelength conversion element with an area of 1 mm.sup.-1 is shown, which is provided on both sides by means of a
- the wavelength conversion element contains as Matrix material for example silicone and the dyes I (a yellow-green phosphor) and II (a red
- Exemplary phosphors are oxides or nitrides, oxynitrides, sialones and orthosilicates.
- the thickness of the wavelength conversion element is about 110 ym.
- FIGS. 7 and 8 show
- Wavelength conversion element which has an area of 2 mm 2 , was treated only on one side with an oxygen plasma, and in the singulation to a
- Thermorelease film was punched as an auxiliary layer.
- the thickness and the materials are the same as in the
- Carrier layer arranged.
- FIGS. 5a to 5d show microscopic photographs of the wavelength conversion element.
- Figure 5a shows the first surface 10a and top of the
- Wavelength conversion element the figure 5b shows the second surface 10b and underside of the
- FIGS. 5c and 5d respectively show enlarged cutouts with the side edges of FIG
- Wavelength conversion element As can be seen from the figures, it is a quadrangular
- Wavelength conversion element having a recess 11 at a corner.
- FIGS. 6a to 6g each show electron micrographs of this wavelength conversion element.
- FIGS. 6a to 6d show the first surface 10a, the figures 6e to 6g the second surface 10b of the
- Wavelength conversion element In particular, in FIGS. 6b and 6d, the sharp edges between the first surface 10a and the side edges of the
- Wavelength conversion element to recognize well. Furthermore, it can be seen that the glazing of the first surface 10a has only a small penetration depth, which corresponds to approximately 1% of the thickness of the wavelength conversion element.
- Figure 6c shows enlarged the recess 11 at the corner of the wavelength conversion element.
- Figures 7a to 7e show microscopic photographs of a wavelength conversion element made as described above. Here were two recesses 11 at
- Wavelength conversion element made as in the
- FIG. 7a shows the first surface 10a of the wavelength conversion element
- FIG. 7c shows the second surface 10b of FIG
- Wavelength conversion element with the second above
- Figure 7e shows an enlarged side view of the
- Wavelength conversion element with the first above
- Figures 8a to 8f show electron micrographs of this wavelength conversion element.
- Figures 8a to 8c show the first surface 10a
- Figures 8d to 8f show the second surface 10b.
- Figures 8b and 8c are again the sharp edges between the first surface 10a and the side edges of the wavelength conversion element recognizable. The sharp edges, which in the examples of the
- Wavelength conversion element can be seen, show that the method is well suited
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Abstract
Description
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/889,837 US9537064B2 (en) | 2013-05-08 | 2014-05-06 | Method for the production of a wavelength conversion element, wavelength conversion element, and component comprising the wavelength conversion element |
DE112014002320.5T DE112014002320B9 (de) | 2013-05-08 | 2014-05-06 | Verfahren zur Herstellung eines Wellenlängenkonversionselements, Wellenlängenkonversionselement und Bauelement aufweisend das Wellenlängenkonversionselement |
KR1020157033842A KR102243743B1 (ko) | 2013-05-08 | 2014-05-06 | 파장 변환 요소의 제조 방법, 파장 변환 요소 및 파장 변환 요소를 포함하는 소자 |
CN201480025741.3A CN105190918B (zh) | 2013-05-08 | 2014-05-06 | 用于制造波长转换元件的方法、波长转换元件和具有波长转换元件的器件 |
JP2016512341A JP6193478B2 (ja) | 2013-05-08 | 2014-05-06 | 波長変換要素の製造方法、波長変換要素、および波長変換要素を備えた部品 |
Applications Claiming Priority (2)
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DE102013104776.9 | 2013-05-08 | ||
DE102013104776.9A DE102013104776A1 (de) | 2013-05-08 | 2013-05-08 | Verfahren zur Herstellung eines Wellenlängenkonversionselements, Wellenlängenkonversionselement und Bauelement aufweisend das Wellenlängenkonversionselement |
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WO2014180842A1 true WO2014180842A1 (de) | 2014-11-13 |
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PCT/EP2014/059231 WO2014180842A1 (de) | 2013-05-08 | 2014-05-06 | Verfahren zur herstellung eines wellenlängenkonversionselements, wellenlängenkonversionselement und bauelement aufweisend das wellenlängenkonversionselement |
Country Status (6)
Country | Link |
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US (1) | US9537064B2 (de) |
JP (1) | JP6193478B2 (de) |
KR (1) | KR102243743B1 (de) |
CN (1) | CN105190918B (de) |
DE (2) | DE102013104776A1 (de) |
WO (1) | WO2014180842A1 (de) |
Families Citing this family (1)
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JP7060810B2 (ja) * | 2019-11-19 | 2022-04-27 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
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JP2004244643A (ja) * | 2004-05-19 | 2004-09-02 | Sony Corp | 蛍光体粉末、表示用パネル、並びに、平面型表示装置 |
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- 2014-05-06 WO PCT/EP2014/059231 patent/WO2014180842A1/de active Application Filing
- 2014-05-06 JP JP2016512341A patent/JP6193478B2/ja not_active Expired - Fee Related
- 2014-05-06 CN CN201480025741.3A patent/CN105190918B/zh not_active Expired - Fee Related
- 2014-05-06 DE DE112014002320.5T patent/DE112014002320B9/de not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
DE102013104776A1 (de) | 2014-11-13 |
US9537064B2 (en) | 2017-01-03 |
CN105190918A (zh) | 2015-12-23 |
DE112014002320B9 (de) | 2022-04-07 |
KR20160006716A (ko) | 2016-01-19 |
KR102243743B1 (ko) | 2021-04-23 |
DE112014002320A5 (de) | 2016-03-31 |
US20160104822A1 (en) | 2016-04-14 |
JP6193478B2 (ja) | 2017-09-06 |
DE112014002320B4 (de) | 2022-01-20 |
CN105190918B (zh) | 2017-09-12 |
JP2016524180A (ja) | 2016-08-12 |
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