WO2014180281A1 - 薄膜太阳能电池板及其制备方法 - Google Patents

薄膜太阳能电池板及其制备方法 Download PDF

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Publication number
WO2014180281A1
WO2014180281A1 PCT/CN2014/076723 CN2014076723W WO2014180281A1 WO 2014180281 A1 WO2014180281 A1 WO 2014180281A1 CN 2014076723 W CN2014076723 W CN 2014076723W WO 2014180281 A1 WO2014180281 A1 WO 2014180281A1
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Prior art keywords
thin film
film solar
solar cell
electrode
panel according
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PCT/CN2014/076723
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English (en)
French (fr)
Inventor
杨立友
汪浩
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上海硕拉投资管理合伙企业（有限合伙）
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Priority to US14/889,847 priority Critical patent/US20160118519A1/en
Priority to KR1020177029481A priority patent/KR20170118256A/ko
Priority to KR1020157010086A priority patent/KR20160007475A/ko
Priority to JP2015557326A priority patent/JP2016511940A/ja
Priority to EP14794838.4A priority patent/EP2996160A4/en
Publication of WO2014180281A1 publication Critical patent/WO2014180281A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60J—WINDOWS, WINDSCREENS, NON-FIXED ROOFS, DOORS, OR SIMILAR DEVICES FOR VEHICLES; REMOVABLE EXTERNAL PROTECTIVE COVERINGS SPECIALLY ADAPTED FOR VEHICLES
    • B60J7/00—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs
    • B60J7/02—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs of sliding type, e.g. comprising guide shoes
    • B60J7/04—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs of sliding type, e.g. comprising guide shoes with rigid plate-like element or elements, e.g. open roofs with harmonica-type folding rigid panels
    • B60J7/043—Sunroofs e.g. sliding above the roof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/40—Mobile PV generator systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/26—Building materials integrated with PV modules, e.g. façade elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the invention relates to the field of solar photovoltaic products, and in particular to a thin film solar panel and a preparation method thereof. 3 articles
  • Thin-film solar cells have undergone a long process of development from invention to large-scale commercialization.
  • the first amorphous silicon thin film solar cell was successfully developed by Radio Corporation of America (RCA). After the mid-1990s, with the continuous advancement of semiconductor manufacturing equipment and preparation processes, high-efficiency stacking
  • the layered silicon-based thin film solar cell realizes large-scale commercial production, and its light absorbing material is developed from the original amorphous silicon homogenous structure to a heterojunction structure composed of amorphous silicon, polycrystalline silicon and single crystal silicon.
  • thin film solar cells based on inorganic semiconductor compounds such as cadmium sulfide, gallium arsenide, and copper indium gallium tin, and organic materials based on polythiamidine and fullerene derivatives are also booming. Medium, and has broad application prospects.
  • thin-film solar cells Compared with crystalline silicon solar cells, thin-film solar cells have many advantages such as beautiful appearance, high degree of automation, flexibility, and transparency. Therefore, thin-film solar cells are more suitable for small-sized and small-sized power generation applications. Flexible photovoltaic application products. With the advancement of industrialization and the continuous decline of cost, the application of thin-film solar cell products has emerged in an endless stream, and has gradually deepened into various aspects of daily life. For example, in the field of solar cells for automobiles, there have been continuous patent applications since the 1990s, such as the US Patent No. 5,602,457, which provides a technology for placing solar cells in the windshield of automobiles. Used to charge electricity in the car; European Patent No.
  • 393 0393437 provides another A technology that installs a solar-assisted power system for the car to drive the air conditioning system in the car and reduce the temperature inside the car during daylight exposure.
  • the techniques disclosed in the above patents all utilize the conventional method for preparing a crystalline silicon device, and the battery on the glass substrate is insulated and divided, the process is complicated, and the degree of bonding with the automobile body is not high.
  • the substrate of the thin film solar cell can select any one of glass, polymer, ceramic and graphite according to specific requirements, wherein the glass is a transparent substrate and has good light transmittance, and can be used for manufacturing transparent thin film solar power.
  • the polymer is a flexible substrate that is easily bent and folded and is commonly used in the manufacture of flexible thin film solar cells.
  • a thin film solar cell is used as a photovoltaic application product for a common object such as an automobile or a building integrated structure, on the one hand, it is required to have good light transmittance to ensure the illumination brightness in the interior or interior of the vehicle, and on the other hand, it is required to have a good light. Bending properties to fit snugly against curved structural surfaces such as automotive sunroofs and architectural glass. To meet these two needs, the substrate of a thin film solar cell must be both transparent and bendable.
  • the polymer substrate does not have both light transmission and high temperature resistance, i.e., cannot withstand 200.
  • the process temperature above C, and the thickness of the glass substrate selected by the existing thin film solar cell technology is generally greater than 3 mm, and has no bendability, and cannot be directly used for processing flexible solar power.
  • most of the existing thin film solar cell manufacturing equipment and processes are built on a planar substrate, such as flat float glass, which makes it possible to directly manufacture thin film solar cells having a certain curvature. difficult. If a thin film solar cell is to be processed by performing a uniform coating on a curved substrate, it is necessary to make major changes to the coating equipment and process, which not only greatly increases the cost, but also has different bending structure faces.
  • the shape and curvature of the arc also have significant limitations on the degree to which the equipment and process are adapted to different products. For the above reasons, the application of thin film solar cells in the field of bendable products has not been well developed.
  • the glass substrate used in the existing thin film solar panel is thick and has no bendability, so that The thin film solar panel cannot be used for a curved solar cell module, and the preparation process of the existing thin film solar panel is difficult to manufacture for a battery module having a certain bending curvature, and cannot be widely applied to a bendable photovoltaic product. Manufacturing.
  • an object of the present invention is to provide a thin film solar panel having a high flexibility and a light transmittance of the substrate, so that the thin film solar power
  • ⁇ can be conveniently used to make curved solar cell modules and has a light transmissivity of f;
  • a thin film solar panel comprising a substrate, a first electrode on the substrate, a photoelectric conversion layer on the first electrode, and a first on the photoelectric conversion layer
  • the two electrodes further include a gate electrode
  • the substrate is an ultra-thin glass substrate
  • the ultra-thin glass substrate has a thickness of 0, 1- 1 mm
  • the ultra-thin glass substrate has flexibility, and the minimum bending
  • the radius can be up to 10 cm or less
  • the first electrode is continuously disposed on the substrate during formation.
  • the ultra-thin glass substrate having a thickness of 0.1 1 mm has an effect of increasing light transmittance, and improves light transmittance of the thin film solar panel;
  • the ultra-thin glass substrate has better bendability, can be conveniently used for making a curved solar cell module, and increases the transmittance of the photoelectric conversion layer by increasing the light transmittance, so that the thin film solar cell is obtained.
  • the efficiency of the board is 1-2% higher than that of the existing thin film solar cell; compared with the polymer substrate, the ultra-thin glass substrate also has the advantages of high temperature resistance and good environmental erosion resistance; the first electrode Continuously disposed on the substrate, compared with a conventional method of dividing a plurality of battery blocks by an insulating material on a substrate, the process is simple, and when applied to a curved component, it can be closely combined with the curved structure to form a uniform and continuous integration. Structure, more beautiful.
  • the ultra-thin glass substrate has a bending radius of more than 30em, and the ultra-thin glass substrate has a thickness of 0, 35-lmm.
  • the beneficial effect is that the bending half required to achieve a certain curved surface In the case of a diameter, a thicker ultra-thin glass should be used as a substrate to increase the strength of the thin film solar panel.
  • the first electrode is a fully transparent film
  • the second electrode is a non-transparent film
  • the first and second transparent electrodes have the same light transmittance and are all transparent films.
  • the materials of the first and second electrodes are transparent conductive oxides
  • the transparent conductive compounds include one of zinc oxide, tin oxide, indium tin oxide and graphene.
  • the photoelectric conversion layer comprises one or more of amorphous silicon, microcrystalline silicon, polycrystalline silicon and single crystal silicon thin film, and the amorphous silicon, multi-E3 ⁇ 4 stone or single crystal silicon film is formed to include one- A single junction structure of ii or p-i-n junctions, or a multi-junction structure comprising a plurality of p-n or p-i-n junctions.
  • the photoelectric conversion layer comprises one or more of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
  • the thin film solar panel is preferably used in an automobile, a ship or various building integrated structures, the thin film solar panel is used for a sunroof of a car, the gate electrode of the thin film solar panel and a vehicle power source and The load is connected by wires including fans in the cabin, lights, and an electronic entertainment system.
  • the thin film solar panel is used for a sunroof of a vehicle, and the bending radius of the substrate is greater than lm c ,
  • the automobile sunroof comprises a car sunroof glass having a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle, the thin film solar panel being attached to the upper surface of the sunroof glass of the automobile
  • the photoelectric conversion layer includes a P-type layer and an N-type layer, and the P-type layer electrode is disposed.
  • the sunroof of the automobile comprises a sunroof glass of the automobile
  • the sunroof of the car has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle
  • the thin film solar cell panel is attached under the sunroof glass of the automobile
  • the 3 ⁇ 4 conversion layer on the surface includes a ⁇ -type layer, An N-type layer disposed adjacent to the first electrode.
  • the electrons generated in the P-type layer will be collected by the electrodes at a greater distance across the I-layer, and the holes can be directly collected by the electrodes adjacent to the P-type layer, thereby increasing the collection rate of holes, thereby The photoelectric conversion efficiency of the battery is improved.
  • the thin film solar panel is used in a ship or building integrated structure, and the substrate has a bending radius greater than 3 ()em.
  • the invention also provides a method for preparing a thin film solar panel, comprising the following steps:
  • the laser is separately scribed to divide the solar cell into a plurality of smaller battery units to form a string and connect to reduce the resistance. Loss, improve the energy conversion efficiency of the battery;
  • the gate electrode is disposed to form a thin film solar cell.
  • the solar panel is bent.
  • the method for preparing a thin film solar panel provided by the present invention is continuous in the formation process of each layer of the film, except that the laser cell is cut into smaller battery cells in step S3 after the coating is completed, thereby producing The process is simpler, the preparation efficiency is improved, and the thin film solar cell is also made
  • the plate is closely attached to the curved structure surface, and has an integrated structure, and the appearance is more beautiful.
  • the method for preparing a thin film solar panel directly combines the solar panel with a bendable ultra-thin glass substrate and a curved structural surface by bending treatment to form a solid solar cell module having a certain curvature,
  • the ultra-thin glass substrate ⁇ is in a flat form during the coating process, and the process conditions do not need to be changed.
  • the problems encountered in the manufacture of the bent battery assembly and the additional cost are greatly avoided, and the installation is greatly increased. And the general applicability of the preparation process to various bending electrical components.
  • the bending process combines the thin film solar cell deposited on the ultra-thin glass substrate with a curved structure having a certain rigidity by a lamination process for encapsulating the thin film solar cell It is isolated from the surrounding environment and forms a curved solar panel that works stably.
  • the bending process employs a bonding process to combine the thin film solar panel with a curved structure having a certain rigidity to form a curved solar panel that can work stably.
  • the first electrode is a fully transparent film
  • the second electrode is a non-transparent film.
  • the first and second electrodes have the same light transmittance and are all transparent films.
  • the material of the first and second electrodes is a transparent conductive oxide
  • the transparent conductive oxide is one of zinc oxide, tin oxide, indium tin oxide and graphene.
  • the first and second electrode preparation process temperatures are lower than 600° (:.
  • the first electrode and the second electrode are prepared by an L:PCVD, MOCVD or APCVD process.
  • the photoelectric conversion layer comprises one or more of amorphous silicon, crystallized silicon, polycrystalline silicon and single crystal silicon thin film, and the amorphous silicon, microcrystalline silicon, polycrystalline silicon or single crystal silicon thin film is formed to comprise one A single junction structure of a p-n or p i-n junction, or a multi-junction structure comprising a plurality of pn or p i-n junctions.
  • the process temperature of the preparation process of the photoelectric conversion layer is lower than 600° (: Further preferably, the photoelectric conversion layer is prepared by a PECVD method.
  • the photoelectric conversion layer comprises one or more of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
  • the curved structure having a certain rigidity comprises a bent glass which has been formed and a metal structural member which has been subjected to surface insulation treatment.
  • the curved glass is a car sunroof glass, a marine structural glass or a building glass, and the surface insulated metal structure comprises an automobile roof structure.
  • the curved glass is an automotive sunroof glass, and the gate electrode of the thin film solar cell is connected to a vehicle power source and its load through a wire, the load including a fan, an illumination lamp, and an electronic entertainment system in the vehicle compartment.
  • the lamination process is carried out in an autoclave or by a curved vacuum lamination method.
  • the laminated material is selected from EVA, PVB or ionomer resin.
  • the bonding process uses a Vertak adhesive produced by DuPont. Description
  • Figure 1 is a schematic view showing the structure of a preferred embodiment of the thin film solar cell panel disclosed in the present invention.
  • Fig. 2 is a graph showing the relationship between the light absorptivity and the wavelength of light of an ultrathin glass substrate of different thicknesses.
  • Figure 3 is a graph showing the relationship between the bending stress and the bending radius of two thin ultra-thin glass substrates.
  • Fig. 4 is a graph showing the relationship between the bending stress and the bending radius of an ultrathin glass substrate of various thicknesses.
  • Fig. 5 is a preferred embodiment of the disclosed thin film solar panel for use in a vehicle sunroof.
  • Fig. 6 is a flow chart showing a method of fabricating the disclosed thin film solar panel. detailed description
  • the thin film solar cell panel includes a substrate 10, a first electrode 20 on the substrate, a photoelectric conversion layer 30 on the first electrode, and a second electrode on the photoelectric conversion layer 30. 40, further comprising a gate electrode 50 on the second electrode.
  • the substrate 10 is an ultra-thin glass substrate having a thickness of 0.11 mm, and the ultra-thin glass substrate has bendability with a minimum bending radius of 10 cm or less.
  • the first electrode 20 is continuously disposed on the substrate 10 in which it is formed.
  • the photoelectric conversion layer 30 includes an amorphous silicon p-type layer 31L amorphous silicon intrinsic layer 32 and an amorphous silicon n-type layer 33, a first electrode 20 and a second electrode 40. Both are made of zinc oxide material.
  • the substrate 10 is selected from a variety of ultra-thin glass products from Coming Incorporated, such as Lotus Glass, Wiiiow Gkss, and Gorilla Glass.
  • Figure 2 shows the relationship between the light transmittance of ultra-thin glass and the wavelength of light.
  • the light transmittances of three ultrathin glasses having thicknesses of 0, () 5 mm, 0, 1 mm, and (). 2 mm are the same as the wavelength of light, and are in the wavelength range of 200 nm to 350 nm.
  • the transmittance increases rapidly with increasing wavelength; when the wavelength of light is greater than the wavelength of 350 nm, the increase in transmittance becomes slower and gradually saturates to a constant greater than 90%.
  • the thinner the ultra-thin glass is used as a substrate.
  • the photoelectric conversion layer has a higher absorption rate for short-wavelength light, so that the efficiency of the thin film solar cell can be improved by 12%.
  • Figure 3 shows the bending stress of two thicknesses of ultra-thin glass and its bending radius.
  • Reference Figure 3 ultra-thin glass with a thickness of 0. 2mm which has a bending stress corresponding to any bending radius greater than an ultra-thin glass with a thickness of (), lmm. Therefore, the smaller the thickness of the glass, the smaller the bending stress corresponding to the same bending radius, and the easier it is to bend it, and the less likely it is to crack.
  • the bending stress approaches 0 in a large range with a bending radius of 10-30 cm, and the bending stress is significant only when the bending radius is less than l() cm and close to 5 cm. rise.
  • the minimum bend radius is defined as the bend radius of the glass at a certain threshold stress under certain processing conditions, and the smaller the minimum radius, the better the bendability of the glass. If the minimum bending radius is used to characterize the excellent degree of flexibility of the ultra-thin glass, it can be seen from Fig. 3 that the OJmm ultra-thin glass has an optimum bending property with a minimum bending radius of up to 10 cm or less.
  • the planar thin-film solar panel can be conveniently processed into a curved battery assembly having a certain curvature, and the ultra-thin glass having a small thickness can be bent, thereby making it possible to manufacture A solar module with a small bending radius.
  • the thickness of the ultra-thin glass to be selected depends on the curvature of the final curved battery assembly. The larger the curvature, the thinner glass with a smaller minimum bending radius should be used as the substrate.
  • the thinner the thickness of the ultra-thin glass selected the smaller the strength, and it is easy to break under external pressure or rain. At the same time, it is also easy to break during the manufacturing process, reducing production yield and increasing costs. Therefore, thicker glass should be selected as the substrate to enhance the strength of the substrate 10 as far as the actual bending requirement is satisfied.
  • the bend radius is a minimum of 30 em, and for a car sunroof it is greater than lm.
  • ⁇ is the maximum surface bending tensile stress, which is the thickness of the ultra-thin glass, ? is the bending radius, and £ is the Young's modulus of the glass.
  • Figure 4 shows the relationship between the bending stress and the bending radius of ultrathin glass of various thicknesses. Referring to Fig. 4, the flexibility of the ultra-thin glass having a thickness of 1 mm or less is very good. In the bend When the radius of curvature is 30 cm, the ultra-thin glass having a thickness of 0.5 mm has a maximum surface bending tensile stress of about 60 M:Pa, a thickness of (), and an ultra-thin glass of 3 mm of about 30 MPa.
  • the Young's modulus of the glass is 90 GPa, and the maximum surface bending tensile stress is 52.5 MPa.
  • the intrinsic strength of the glass is about 200 MPa, in practical applications, the maximum surface bending tensile stress of the ultra-thin glass is required to be around 50 M:Pa to prevent breakage due to surface defects. Therefore, an ultra-thin glass having a thickness of 0.35 mm can satisfy this requirement.
  • the ultra-thin glass substrate has a bending radius of more than 30 cm, and thus the ultra-thin glazing substrate has a thickness of 0, 35 - 1 mm.
  • a chemically tempered ultra-thin glass such as Corning's orangutan glass as a substrate.
  • the ultra-thin glass substrate also has the advantages of high temperature resistance and good environmental corrosion resistance with respect to the polymer substrate.
  • the first electrode 20 is continuously disposed on the substrate 10, and has a simple process compared with the conventional one in which a plurality of battery blocks are separated by an insulating substance on the substrate.
  • the first structure can be closely integrated with the curved structure. , more beautiful.
  • the first electrode 20 and the second electrode 40 have the same light transmittance and are all transparent films.
  • the fully permeable film allows more sunlight to pass through the sunroof or building glass, helping to increase the brightness of the interior or interior of the car.
  • the first electrode 20 over the substrate 10 is a fully transparent film and the second electrode 40 over the photoelectric conversion layer is a non-transparent film.
  • the use of the non-transparent film as the second electrode 40 helps to reflect the light transmitted through the photoelectric conversion layer back into the photoelectric conversion layer, thereby improving the light absorption rate and further improving the battery efficiency.
  • the materials of the first electrode 20 and the second electrode 40 are both transparent conductive oxides.
  • the first electrode 2 () and the second electrode 40 are both zinc oxide.
  • the first and second electrodes further comprise zinc oxide, tin oxide Or one of graphene.
  • the photoelectric conversion layer 3 () includes one or more of amorphous silicon, microcrystalline silicon, polycrystalline silicon, and single crystal silicon thin film, and the amorphous silicon, microcrystalline silicon, polycrystalline silicon, or single crystal silicon thin film is formed to include one p- 11 or a single junction structure of a pin junction, or a multi-junction structure of a plurality of pn or p i-n junctions.
  • the photoelectric conversion layer comprises one or more of a cadmium cadmium film, a copper indium gallium tin film, and an organic semiconductor film.
  • the thin film solar panels are used in automotive, marine or various building integrated structures.
  • the thin film solar panel is used in a sunroof of a vehicle, and the gate electrode is connected to a vehicle power source and a load thereof through a wire, and the load includes a fan, an illumination lamp, and an electronic body in the vehicle compartment.
  • the substrate has a bending radius of more than 1 m, so that a thicker, such as an ultra-thin glass having a thickness of 1 mm, can be used as the substrate.
  • the automotive sunroof includes the thin film solar panel and the automotive sunroof glass 300.
  • the thin film solar cell panel includes an ultra-thin glass substrate 100 and a thin film battery pack 200 on the ultra-thin glass substrate, the thin film battery pack 200 being composed of the first electrode, the photoelectric conversion layer, and The second electrode is constructed.
  • the photoelectric conversion layer includes a P-type layer 31 and an N-type layer 33. In some preferred embodiments of the present invention, the photoelectric conversion layer further includes a layer between the P-type layer 31 and the N-type layer 33. Type I layer 32.
  • the automotive sunroof glass 300 has a lower surface 320 facing the interior of the vehicle and an upper surface 310 facing the exterior of the vehicle.
  • the thin film solar panel may be attached to the upper surface 310 of the automotive sunroof glass 300, or may be attached to The lower surface 320 of the automotive sunroof glass 300.
  • the P-type layer 31 is disposed adjacent to the first electrode 20.
  • the N-type layer 33 is disposed adjacent to the first electrode 20. This causes the P-type layer 31 to always face the direction of the sunlight.
  • the mobility of electrons in the amorphous silicon film is greater than the mobility of the holes, the lifetime of the electrons is also greater than the lifetime of the holes, and the electrons generated in the P-type layer 31 pass through the I layer through the drift and diffusion motion to be collected by the electrodes;
  • the n-type layer 33 receives light to generate a carrier current, the holes generated in the n-type layer 33 are easily lost due to recombination when passing through the I layer due to the small mobility and lifetime. Therefore, the P-type layer 31 is always oriented toward the direction of sunlight to improve the collection rate of carriers, thereby improving the light energy conversion efficiency of the solar panel.
  • the substrate when the thin film solar panel is used in a ship or building integrated structure, the substrate has a bending radius of more than 30 cm. As described above, in this case, an ultra-thin glass having a thickness of more than 0.35 mm can be used as the substrate.
  • the invention also provides a method for preparing a thin film solar power device, which comprises the following steps:
  • a laser is used to scribe the solar cell to divide the solar cell into a plurality of small electric powers; 'also units are formed and connected, and In order to reduce the resistance loss, improve the energy conversion efficiency of the battery;
  • the gate electrode is disposed to form a thin film solar cell.
  • the solar panel is bent.
  • the prior art process for preparing a thin film solar cell is to splicing a plurality of smaller battery cells.
  • the process is complicated, the preparation efficiency is low, and the separated electrical components in the finally formed battery component do not form a continuous structure. , affecting the aesthetics of the product.
  • the first electrode is continuously disposed on the substrate during formation, and the photoelectric conversion layer is also continuously disposed on the first electrode during formation, the second The electrode is continuously disposed on the photoelectric conversion layer during formation.
  • the present invention is only used in the step S3 after the completion of the coating to cut into smaller battery cells by laser reticle, forming a series or parallel connection without filling any insulating material, so that the manufacturing process is simpler and the preparation efficiency is improved.
  • the film layer of the whole battery board is uniform and continuous, and has an integrated structure, and the appearance is more beautiful.
  • the method for preparing a thin film solar panel disclosed by the invention directly bends a solar panel deposited on a flat ultra-thin glass substrate to form a solid thin film solar panel with a certain curvature, due to the coating
  • the ultra-thin glass substrate is still in the form of a plane, and the process conditions do not need to be changed, avoiding the problems and additional costs usually encountered in the manufacture of the bending electrical component, greatly increasing the equipment and preparation.
  • the bending process combines the thin film solar energy deposited on the ultra-thin glass substrate with a curved structure having a certain rigidity by a lamination process for encapsulating the Thin-film solar cells are isolated from the surrounding environment and form a flexible solar panel that works stably.
  • the lamination process is carried out in an autoclave or by a curved vacuum lamination method.
  • the material of the lamination process is EVA, PVB or ionomer resin.
  • the bending process adopts a bonding process
  • the The thin film solar panel is combined with a curved structure having a certain rigidity to form a curved solar panel that can work stably.
  • the bonding process uses a "Vertak" binder produced by DuPont.
  • the curved structure having a certain rigidity includes the bent glass which has been formed and the metal structural member which has been subjected to surface insulation treatment.
  • the curved glass is a car sunroof glass, a marine structural glass or a building glass, and the surface-insulated metal structural member comprises an automobile roof structure.
  • the gate electrode of the thin film solar cell is connected to a vehicle power source and its load through a wire, the load including a fan in the car, an illumination lamp, and an electronic entertainment system.
  • the first electrode and the second electrode have the same light transmittance and are all transparent films. This is a high light transmission of thin film solar panels.
  • the first electrode is a fully transparent film
  • the second electrode is a non-transparent film. The non-transparent film can reverse the light transmitted through the photoelectric conversion layer, thereby improving the light absorption rate of the battery.
  • the materials of the first electrode and the second electrode are both transparent conductive oxides, and the transparent conductive oxides are one of oxidation, tin oxide, antimony tin oxide and graphene.
  • the photoelectric conversion layer includes one or more of amorphous silicon, microcrystalline silicon, polycrystalline silicon, and single crystal silicon thin film.
  • the photoelectric conversion layer is made of amorphous silicon n.
  • a p-i-n type structure composed of a doped layer, an intrinsic layer and a p-type doped layer.
  • the photoelectric conversion layer comprises a pn or p-i-n junction single junction structure formed of amorphous silicon, microcrystalline silicon, polycrystalline silicon or a single crystal silicon thin film, or a multi-junction structure of a plurality of p-n junctions and pin junctions. .
  • the photoelectric conversion layer includes one or more of a hoof cadmium film, a copper indium gallium film, and an organic semiconductor film.
  • Process temperature of a process for preparing the first, second electrode or the photoelectric conversion layer When the degree is close to the strain point of the glass, the ultra-thin glass is prone to deformation, so the process temperature should be kept as far as possible from the glass strain point.
  • the strain point of ultra-thin glass varies from 650 to 700 °C, and the strain points of other ultra-thin glass also vary within a similar range. Therefore, the process temperature of the process is less than 600 to prevent deformation of the ultra-thin glass substrate during deposition.
  • the LPCVD method for preparing a transparent oxide film has a process temperature of 180-2I0 ° C, and the MOCVD process can have a process temperature as low as 500. C, while the process temperature of the APCVD method is 450.
  • the process temperature for PECVD for preparing a silicon-based photoelectric conversion layer film is generally 30 ().
  • the above process methods all satisfy the process temperature of less than 6 () 0. C requirements. Therefore, the first and second electrodes are prepared by an LPCVD, MOCVD or APCVD process, and the photoelectric conversion layer is prepared by a PECVD process.

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Abstract

提供一种薄膜太阳能电池板及其制备方法。薄膜太阳能电池板包括衬底（10）、位于衬底（10）上的第一电极（20）、位于第一电极（20）上的光电转换层（30）、位于光电转换层（30）上的第二电极（40）和设置于第二电极（40）上的栅电极（50），衬底（10）为超薄玻璃衬底，其厚度为0.1-1mm，超薄玻璃衬底具有可弯曲性，其最小弯曲半径可达10cm以下，第一电极（20）在形成过程中连续设置在衬底（10）上。因此提高了薄膜太阳能电池板的透光性，并使得其可方便的用于制作弯曲的太阳能电池组件。还改进了可弯曲薄膜太阳能电池板的制备工艺，避免了额外成本的增加，极大的增加了设备和制备工艺方法对各种可弯曲薄膜太阳能电池板的普遍适用性。

Description

技术领域
本发明涉及太阳能光伏产品领域， 尤其涉及一种薄膜太阳能电池板及其 制备方法。 3文
薄膜太阳能电池从发明到大规模商业化经历了一个漫长的发展过程。
1976年第一块非晶硅薄膜太阳能电池由美国无线电公司（Radio Corporation of America, 简称 RCA )研发成功， 进入了上世纪 90年代中期以后， 随着半导 体制备设备和制备工艺的不断进步， 高效叠层硅基薄膜太阳电池实现了大规 模商业化生产， 其光吸收材料由最初的非晶硅同质结构发展到由非晶硅、 多 晶硅和单晶硅组合而成的异质结结构。 除了硅基的薄膜太阳能电池， 近年来 基于硫化镉、 砷化镓、 铜铟镓锡等无机半导体化合物， 和基于聚噻喻、 富勒 烯衍生物等有机材料的薄膜太阳能电池也正在蓬勃发展之中， 并有着广阔的 应用前景。
与晶硅太阳能电池相比， 薄膜太阳能电池有外观漂亮、 生产自动化程度 高、 可弯曲、 可透明等多种优势， 因而除了大 并网和独立发电应用， 薄 膜太阳能电池更适宜于制作各种小型的灵活的光伏应用产品。 随着产业化进 程的推进和成本的不断下降， 薄膜太阳能电池产品的应用层出不穷， 日益广 泛， 并逐渐深入到人ίΠ日常生活的各个方面。 例如在用于汽车的太阳能电池 领域， 自从 20世纪 90年代以来都有持续不断的专利申请， 如公开号为 US5602457美国专利提供了一项技术， 将太阳能电池设置于汽车的挡风玻璃 之内， 用于给车内的蓄电^充电； 公开号为 ΕΡ 0393437的欧洲专利提供了另 一项技术， 为汽车安装了一套太阳能辅助电力系统， 用以驱动车内的空调系 统工作， 降 ^日光曝晒时车内的温度。 然而上述专利公开的技术均是利用传 统的制备晶硅电^的方法， 将玻璃衬底上的电池进行绝缘分割， 工艺较为复 杂， 与汽车本体的结合程度也不高。
薄膜太阳能电池的衬底可以根 4^具体需求选择玻璃、 聚合物、 陶瓷和石 墨中的任何一种， 其中玻璃为透明衬底， 透光性好， 可用于制造透明的薄膜 太阳能电^ , 而聚合物为柔性衬底， 容易弯曲和折叠， 一般用于制造可弯曲 的薄膜太阳能电池。 当薄膜太阳能电池作为光伏应用产品用于汽车或建筑一 体化结构等常见物体时， 一方面要求其具有良好的透光性以保证车厢内或室 内的照明亮度， 另一方面又要求其有良好的弯曲性能， 以便和弯曲的结构面 如汽车天窗和建筑物玻璃紧密贴合。 为满足这两方面的需求， 薄膜太阳能电 池的衬底必须是既透明又可弯曲的。
聚合物衬底大都不同时具有透光性和耐高温性， 即无法经受 200。C以上 的工艺温度， 而现有的薄膜太阳能电池技术选用的玻璃衬底的厚度一般大于 3mm, 不具有可弯曲性， 无法直接用于加工制作可弯曲的太阳能电也。 另夕卜， 现有的薄膜太阳能电池制造设备和工艺绝大多数都是建立在平面衬底上的， 如平板浮法玻璃等， 这使得直接制造具有一定弯曲弧度的薄膜太阳能电池存 在很大的困难。 如果要通过在弯曲衬底上进行均勾镀膜来加工制造薄膜太阳 能电池， 则需要对镀膜设备和工艺做较大的改动， 这不仅会使成本大幅度提 高， 而且由于不同弯曲结构面具有不同的形状和弯曲弧度， 导致所述设备和 工艺对不同产品的适应程度也有很大的局限性。 基于上述原因， 薄膜太阳能 电池在可弯曲产品领域的应用一直没有得到 ^艮好的发展。
现有的薄膜太阳能电池板所使用的玻璃衬底较厚， 不具有可弯曲性， 使 得所述薄膜太阳能电池板不能用于弯曲的太阳能电池组件， 并且现有的薄膜 太阳能电池板的制备工艺很难用于制造具有一定弯曲弧度 _的电池组件， 无法 广泛应用于可弯曲光伏产品的制造。
有鉴于此， 本发明的目的在于提供一种薄膜太阳能电池板， 所述薄膜太 阳能电池板的衬底具有较高的可弯曲性和光透射率 , 使得所述薄膜太阳能电
^能够方便的用于制作弯曲的太阳能电池组件且具有较 f的透光性；
本发明的又一目的在于提供一种薄膜太阳能电池板的制备方法， 使其能 广泛应用于各种具有一定弯曲弧度的薄膜太阳能电池组件的制备。
一种薄膜太阳能电^板， 所述薄膜太阳能电池板包括衬底、 位于所述村 底上的第一电极、 位于所述第一电极上的光电转换层、 位于所述光电转换层 上的第二电极， 还包括柵电极， 所述衬底为超薄玻璃衬底， 所述超薄玻璃衬 底的厚度为 0, 1- 1mm,所述超薄玻璃衬底具有可弯曲性，其最小弯曲半径可达 10cm以下， 所述第一电极在形成过程中连续设置在所述衬底上。
本发明所公开的薄膜太阳能电^板的有益效果在于：所述厚度为 0.1 1mm 的超薄玻璃衬底具有增加透光率的效果， 提高了所述薄膜太阳能电^板的透 光性； 所述超薄玻璃衬底的可弯曲性较好， 能够方便的用于制作弯曲的太阳 能电池组件； 通过增加透光率还提高了所述光电转换层的吸收率， 使.得所述 薄膜太阳能电池板的效率比现有的薄膜太阳能电池高 1-2%; 与聚合物衬底相 比， 所述超薄玻璃衬底还具有耐高温， 隔绝环境侵饯性能好的优点； 所述第 一电极连续设置在所述衬底上， 相对于传统的在衬底上用绝缘物质分割出多 个电池块而言， 工艺简单， 在应用于弯曲组件时， 能与弯曲结构紧密结合形 成均匀连续的一体结构， 较为美观。
优选的， 所述超薄玻璃衬底的弯曲半径大于 30em， 所述超薄玻璃衬底的 厚度为 0,35- lmm。 其有益效果在于， 在能够达到一定弯曲表面所需的弯曲半 径的情况下， 应尽可能选用较厚的超薄玻璃做衬底以增加所述薄膜太阳能电 池板的强度。
可选的， 所述第一电极为全透明薄膜， 所述第二电极为非全透明薄膜。 优选的， 所述第一、 第二透明电极的透光性相等， 且均为全透明薄膜。 优选的， 所述.第一、 第二电极的材料均为透明导电氧化物， 所述透明导 电氣化物包括氧化锌、 氧化锡、 氧化铟锡和石墨烯中的一种。
优选的， 所述光电转换层包括非晶硅、 微晶硅、 多晶硅和单晶硅薄膜中 的一种或多种, 所述非晶娃、 多 E¾石圭或单晶娃薄膜形成包含一个 -ii或 p- i- n 结的单结结构， 或包含多个 p- η或 p- i- η结的多结结构。
优选的， 所述光电转换层包括碲化镉薄膜、 铜铟镓锡薄膜和有机半导体 薄膜中的一种或多种。
优选的， 所述薄膜太阳能电池板用于汽车、 船舶或各种建筑一体化结构 优选的， 所述薄膜太阳能电池板用于汽车天窗， 所述薄膜太阳能电池板 的所述栅电极与汽车电源及其负载通过导线相连， 所述负载包括车厢内的风 扇、 照明灯、 电子娱乐系统。
优选的， 所述薄膜太阳能电池板用于汽车天窗， 所述衬底的弯曲半径大 于 lmc,
优选的， 所述汽车天窗包括汽车天窗玻璃， 所述汽车天窗玻璃具有朝向 车内的下表面以及朝向车外的上表面， 所述薄膜太阳能电池板贴合在所述汽 车天窗玻璃的上表面上， 所述光电转换层包括 P型层、 N型层， 所述 P型层 电极设置。 优选的， 所述汽车天窗包括汽车天窗玻璃， 所述汽 车天窗.玻璃具有朝向车内的下表面以及朝向车外的上表面， 所述薄膜太阳倉 电池板贴合在所述汽车天窗玻璃的下表面上 ¾转换层包括 Ρ型层、 N型层， 所述 N型层紧邻所述第一电极设置。 其有益效果在于， 由于非晶硅 薄膜中电子的迁移率大于空穴的迁移率， 在包含 P- 1- N结的所述光电转换层 中， 将所述 P型层设置于接受太阳光照射的一面， 所述 P型层中产生的电子 将跨越 I层运动更远的距离而被电极收集，而空穴可以直接被紧邻 P型层的电 极所收集， 提高了空穴的收集率， 从而提高了电池的光电转换效率。
优选的， 所述薄膜太阳能电池板用于船舶或建筑一体化结构， 所述衬底 的弯曲半径大于 3()em。
本发明还提供了一种薄膜太阳能电 板的制备方法， 其包含如下步骤：
51. 提供一超薄玻璃衬底， 所述超薄玻璃衬底的厚度为 0,1 1mm , 所 述超薄玻璃衬底具有可弯曲性 , 其最小弯曲半径可达 10cm以下；
52.在所述超薄玻璃衬底上依次沉积第一电极、 光电转换层和第二电 极；
53. 对所述第一电极、 光电转换层和第二电极沉积完成后， 用激光分 别刻线，用以将所述太阳能电池分割成诸多较小的电池单位形成串并连接， 用以降低电阻损耗， 提高电池的能量转换效率；
54. 对所述电池结构做激光或化学刻蚀处理， 用以增加所述电池结构 的透光性；
55. 设置所述柵电极， 形成薄膜太阳能电池。
56. 对所述太阳能电池板迸.行弯曲处理。
本发明所提供的薄膜太阳能电池板的制备方法的有益效果为：
本发明所提供的薄膜太阳能电池板的制备方法在各层薄膜在形成过程中 都是连续的， 只是.在镀膜完成之后的步驟 S3中才用激光刻线切割成较小的电 池单元， 因而制作工艺更为简单， 提高了制备效率， 也使得薄膜太阳能电池 板与弯曲结构面紧密貼合， 呈一体化结构， 外表更为美观。
本发明所提供的薄膜太阳能电池板的制备方法将具有可弯曲超薄玻璃衬 底的所述太阳能电池板与弯曲结构面通过弯曲处理直接结合， 形成牢固的具 有一定弧度的太阳能电池组件， 由于在镀膜过程中超薄玻璃衬底仞处于平面 形式， 工艺条件都不需要做任何改变， 避免了通常在制造弯曲电池组件时所 遇到的问题和额外成本的增加， 极大的增加了设,备和制备工艺方法对各种弯 曲电^组件的普遍适用性。
优选的， 所述弯曲处理采用层压工艺将沉积于所述超薄玻璃衬底上的所 述薄膜太阳能电池与具有一定刚性的弯曲结构相结合， 用以封装所述薄膜太 阳能电^， 使其与周围环境相隔绝， 并形成可稳定工作的弯曲太阳能电 ^板。
优选的， 所述弯曲处理采用粘结工艺， 将所述薄膜太阳能电池板与具有 一定刚性的弯曲结构相结合, 形成可稳定工作的弯曲太阳能电池板。
可选的， 所述第一电极为全透明薄膜， 所述第二电极为非全透明薄膜。 优选的， 所述第一、 第二电极的透光性相等， 且均为全透明薄膜。
优选的， 所述第一、 第二电极的材料为透明导电氧化物， 所述透明导电 氧化物为氧化锌、 氧化锡、 氧化铟锡和石墨烯中的一种。
优选的， 所述第一、 第二电极制备工艺温度低于 600° (：。 进一步优选的， 所述第 -电极与第二电极采用 L:PCVD、 MOCVD或 APCVD工艺方法制备。
优选的， 所述光电转换层包括非晶硅、 徵晶硅、 多晶硅和单晶硅薄膜中 的一种或多种， 所述非晶硅、 微晶硅、 多晶硅或单晶硅薄膜形成包含一个 p—n 或 p i- η结的单结结构 , 或包含多个 p-n或 p i- n结的多结结构。
优选的， 所述光电转换层的制备工艺的工艺温度低于 600° (：。进一步优选 的， 所述光电转换层采用 PECVD方法制备。 优选的， 所述光电转换层包括碲化镉薄膜、 铜铟鎵锡薄膜和有机半导体 薄膜中的一种或多种。
优选的， 所述具有一定刚性的弯曲结构包括已经成型的弯曲玻璃和经表 面绝缘处理后的金属结构件。
优选的， 所述弯曲玻璃为汽车天窗玻璃、 船用结构玻璃或建筑物玻璃， 所述经表面绝缘处理后的金属结构件包括汽车车顶结构。 进一步优选的， 所 述弯曲玻璃为汽车天窗玻璃， 所述薄膜太阳能电池的所述柵电极与汽车电源 及其负载通过导线相连， 所述负载包括车厢内的风扇、 照明灯、 电子娱乐系 统。
优选的， 所述层压工艺在高压釜中进行， 或采用曲面真空层压法进行层 压。 进一步优选的， 所述层压的材料选用 EVA、 PVB或离子键树脂。
优选的， 所述粘结工艺选用杜邦公司生产的 "文泰科" （Vertak)粘结剂。 酎图说明
图 i为本发明所公开的薄膜太阳能电池板优选的实施例的结构示意图。 图 2为不同厚度的超薄玻璃衬底的光吸收率与光波长的变化关系图。 图 3为两种较薄的超薄玻璃衬底的弯曲应力与弯曲半径的变化关系图。 图 4为多种厚度的超薄玻璃衬底的弯曲应力与弯曲半径的变化关系图。 图 5 为本发明所公开的薄膜太阳能电池板用于汽车天窗时的一种优选的 图 6为本发明所公开的薄膜太阳能电池板的制备方法的流程图。 具体实施方式
以下将结合附图所示的具体实施方式对本发明进行详细描述， 但这些实 施方式并不限制本发明， 本领域的普通技术人员根椐这些实施方式所做出的 结构、 方法、 或功能上的变换均包含在本发明的保护范围内。
图 1为本发明所提供的薄膜太阳能电池板的优选的实施例的示意图。 参 照图 1 , 所述薄膜太阳能电池板包括衬底 10、 位于衬底上的第一电极 20、 位 于所述第一电极上的光电转换层 30、 位于所述光电转换层 30上的第二电极 40, 还包括所述第二电极上的栅电极 50。 所述衬底 10为超薄玻璃衬底， 所述 超薄玻璃衬底的厚度为 0.1 1mm,所述超薄玻璃衬底具有可弯曲性，其最小弯 曲半径可达 10cm以下。 所述第一电极 20在其中形成过 中连续设置在所述 村底 10上。如图 1所示的本发明优选的实施例， 光电转换层 30包括非晶硅 p 型层 31L 非晶硅本征层 32和非晶硅 η型层 33 , 第一电极 20和第二电极 40 均由氧化锌材料制成。
所述衬底 10选用美国康宁公司 （ Coming Incorporated ) 的多款超薄玻璃 产品， 如莲花玻璃 （Lotus Glass ) , 柳条玻璃 （ Wiiiow Gkss ) , 和猩猩玻璃 ( Gorilla Glass )。 图 2给出了超薄玻璃的光透射率和光波长的关系。 参照图 2, 三种厚度分别为 0,()5mm, 0, 1mm和（).2mm的超薄玻璃的光透射率随光波 长的变化关系是相同的， 在光波长为 200nm到 350nm的波段内， 透射率随着 波长的增大而迅速增大； 当光波长大于 350nm的可见光波段时， 透射率的增 大变慢， 并逐渐饱和为一个大于 90%的常数。 但在上述 200- 350nm的光波段 内， 对于特定的波长， 所述超薄玻璃的厚度越小其透射率越大。 在现有的薄 膜太阳能电池技术中， 一般选用厚度为 3.2mm的玻璃做衬底， 由上述结论可 知， 其对短波长光的透射率远小于超薄玻璃， 导致薄膜电池的透光性较差。 因此选用超薄玻璃做衬底具有增加光透射率的效果。 另外， 选用越薄的玻璃 做衬底， 所述光电转换层对短波段光的吸收率也越高， 从而可以使薄膜太阳 能电池的效率提高 1 2%。
图 3显示了两种厚度的超薄玻璃的弯曲应力与其弯曲半径的关系。 参照 图 3 , 厚度为 0。2mm的超薄玻璃其对应于任何弯曲半径的弯曲应力均大于厚 度为（),lmm的超薄玻璃。 因此玻璃的厚度越小， 对应于同一弯曲半径其弯曲 应力就越小， 当对其做弯曲加工时就越容易， 也越不容易发生破裂。 对应于 0, 1mm的超薄玻璃，在弯曲半径为 10- 30cm的较大范围内，弯曲应力趋近于 0, 只有当弯曲半径小于 l()cm, 接近 5cm时， 弯曲应力才有了显著上升。 将最小 弯曲半径定义为在一定加工条件下， 玻璃在达到一特定的阈值应力时的弯曲 半径， 则最小半径越小， 玻璃的可弯曲性越好。 如果用最小弯曲半径来表征 超薄玻璃弯曲性的优良程度， 由图 3可知， 所述 OJmm的超薄玻璃具有最优 的弯曲性能， 其最小弯曲半径可达 10cm以下。
因此选用超薄玻璃做衬底 10的另一功效是可以方便的将平面的薄膜太阳 能电池板加工成具有一定弧度的弯曲电池组件， 而厚度较小的超薄玻璃可弯 曲性好， 从而可以制成弯曲半径较小的太阳能组件。 具体选用何种厚度的超 薄玻璃， 取决于最终的弯曲电池组件的曲率， 曲率越大， 则应选用最小弯曲 半径更小的超薄玻璃做衬底。
但是在实际应用中， 选用的超薄玻璃厚度越小， 其强度也越小， 很容易 在外界压力或雨水冲刷下发生破损。 同时在制造过程中也容易破碎， 降低生 产良率， 增加成本。 因此， 在满足实际弯曲度需求的前提下， 应尽可能选择 更厚的玻璃做衬底， 以增强所述衬底 10的强度。 在一般的光伏产品应用中， 如船舶和建筑的弯曲表面，其弯曲半径最小为 30em，对于汽车天窗则大于 lm。
一般的， 超薄玻璃弯曲时表面的弯曲张应力与其厚度的关系为：
2R，
其中 σ为最大表面弯曲张应力， 为超薄玻璃的厚度， ?为弯曲半径， £为 玻璃的杨氏模量。 图 4给出了更多种厚度的超薄玻璃的弯曲应力和弯曲半径 的关系。 参照图 4, 厚度在 1mm以下的超薄玻璃的可弯曲性都非常好。 在弯 曲半径为 30cm时， 厚度为 0.5mm的超薄玻璃的最大表面弯曲张应力约为 60M:Pa， 厚度为（),3mm的超薄玻璃的约为 30MPa。 若选用 0.35mm的超薄玻 璃， 根据上述公式， 代入玻璃的杨氏模量 90GPa, 可知其最大表面弯曲张应 力为 52.5MPa。 虽然玻璃的本征强度约达 200MPa, 但在实际应用中要求超薄 玻璃的最大表面弯曲张应力在 50M:Pa附近， 以防止因表面缺陷造成的破碎。 因此， 厚度为 0.35mm的超薄玻璃可以满足这种要求。
在本发明优选的实施例中 , 所述超薄玻璃衬底的弯曲半径大于 30cm， 因 此所述.超薄 ί皮璃衬底的厚度为 0,35- lmm。 在对衬底的强度有特殊要求时， 还 可以选用康宁公司的猩猩玻璃等经过化学钢化处理的超薄玻璃做衬底
相对于聚合物衬底， 所述超薄玻璃衬底还具有耐高温， 隔绝环境侵蚀性 能好的优点。
第一电极 20连续设置在衬底 10上， 相对于传统的在村底上用绝缘物质 分割出多个电池块而言， 工艺简单， 在应用于弯曲组件时， 能够与弯曲结构 紧密结合为一体， 较为美观。
第一电极 20与第二电极 40的透光性相等， 且均为全透明薄膜。 全透性 薄膜使得更多的阳光能透过汽车天窗或建筑物玻璃， 有助于提高车厢内或室 内的照明亮度。
在本发明的其他实施例中， 位于衬底 10之上的第一电极 20为全透明薄 膜， 位于光电转换层之上的第二电极 40为非全透明薄膜。 使用非全透明薄膜 做第二电极 40有助于将透过光电转换层的光反射回光电转换层中， 提高了光 吸收率 , 进而提高了电池效率。
第一电极 20与第二电极 40的材料均为透明导电氧化物， 如图 1所示的 本发明的一种优选的实施例中， 第一电极 2()与第二电极 40均为氧化锌薄膜， 在本发明的其他优选的实施例中， 所述第一、 第二电极还包括氧化锌， 氧化锡 或石墨烯中的一种。
光电转换层 3()包括非晶硅、 微晶硅、 多晶硅和单晶硅薄膜中的一种或多 种， 所述非晶硅、 微晶硅、 多晶硅或单晶硅薄膜形成包含一个 p- 11或 p-i-n结 的单结结构， 或包 -合多个 p n或 p i- n结的多结结构。
在本发明其他优选的实施例中， 所述光电转换层包括蹄化镉薄膜、 铜铟 镓锡薄膜和有机半导体薄膜中的一种或多种。
所述薄膜太阳能电池板用于汽车、 船舶或各种建筑一体化结构中。
在本发明一类优选的实施例中， 所述薄膜太阳能电^板用于汽车天窗， 所述栅电极与汽车电源及其负载通过导线相连， 所述负载包括车厢内的风扇、 照明灯、 电子娱乐系统。所述衬底的弯曲半径大于 1m, 因而可以选用较厚的， 如厚度为 1mm的超薄玻璃做衬底。
图 5为本发明所公开的薄膜太阳能电池板用于汽车天窗时的一种优选的 实施方式的示意图， 参照图 5， 所述汽车天窗包括:所述薄膜太阳能电池板和 汽车天窗玻璃 300。所述薄膜太阳能电池板包括超薄玻璃衬底 100和位.于所述 超薄玻璃衬底上的薄膜电池组 200 , 所述薄膜电池组 200由所述第一电极、所 述光电转换层和所述第二电极构成。 所述光电转换层包括 P型层 31、 N型层 33， 在本发明的某些优选的实施方式中， 所述光电转换层还包括位于所述 P 型层 31、 N型层 33之间的 I型层 32。
所述汽车天窗玻璃 300具有朝向车内的下表面 320以及朝向车外的上表 面 310 , 所述薄膜太阳能电池板可以贴合在所述汽车天窗玻璃 300的上表面 310上， 也可以贴合在所述汽车天窗玻璃 300的下表面 320上。 参照图 5和图 1 , 当所述薄膜太阳能电池板贴合在所述汽车天窗玻璃 300的上表面 310时， 所述 P型层 31 紧邻所述第一电极 20设置。 当所述薄膜太阳能电池板贴合在 所述汽车天窗玻璃 300的下表面 320时， 所述 N型层 33紧邻所述第一电极 20设置。这样使得所述 P型层 31始终朝着太阳光的方向。 由于非晶硅薄膜中 电子的迁移率大于空穴的迁移率， 电子的寿命也大于空穴的寿命， P型层 31 中产生的电子能通过漂移和扩散运动穿过 I层从而被电极收集；但如果 n型层 33接受光照产生载流予， η型层 33中产生的空穴由于迁移率和寿命较小， 很 容易在穿过 I层的时候被复合而被损失掉。 因此所述 P型层 31始终朝着太阳 光的方向有利于提高载流子的收集率， 进而提高太阳能电池板的光能量转换 效率。
在本发明其他优选的实施方式中， 所述薄膜太阳能电池板用于船舶或建 筑一体化结构时， 所述衬底的弯曲半径大于 30cm。 如上所述， 此种情况下可 选用厚度大于 0.35mm的超薄玻璃作为衬底。
本发明还提供了一种薄膜太阳能电^的制备方法， 参照图 6, 其包含如下 步骤：
51. 提供一超薄玻璃衬底， 所述超薄玻璃衬底的厚度为 0.1 - lmm， 所 迷超薄玻璃衬底具有可弯曲性 , 其最小弯曲半径可达 10cm以下；
52。在所述超薄玻璃衬底上依次沉积第一电极、 光电转换层和第二电 极；
53, 对所述第一电极、 光电转换层和第二电极沉积完成后， 用激光分 别刻线，用以将所述太阳能电池分割成诸多较小的电;'也单元并形成并连接， 用以降低电阻损耗， 提高电池的能量转换效率；
54. 对所述电池结构做激光或化学刻蚀处理， 用以增加所述电池结构 的透光性；
55. 设置所述柵电极， 形成薄膜太阳能电池。
56. 对所述太阳能电池板迸.行弯曲处理。
现有技术制备薄膜太阳能电池的工艺方法都是将多个较小的电池单元拼 接起来， 这种工艺较为复杂， 制备效率较低， 而且最终形成的电池组件内分 离的电^片不形成连续结构， 影响产品的美观性。 而本发明所公开的制备方 法所述第一电极在形成过程中连续设置在所述衬底上， 同样所述光电转换层 在形成过程中连续设置在所述第一电极上， 所述第二电极在形成过程中连续 设置在所述光电转换层上。 本发明只是在.镀膜完成之后的步骤 S3中才用激光 刻线切割成较小的电池单元， 形成串联或并联， 无需填充任何绝缘物质， 因 而制作工艺更为简单， 提高了制备效率。 此外， 整块电池板薄膜层均匀连续， 呈一体化结构， 外表更为美观。
本发明所公开的薄膜太阳能电池板的制备方法将在平面的超薄玻璃衬底 上沉积过薄膜的太阳能电池板直接做弯曲处理， 形成牢固的具有一定弯曲弧 度的薄膜太阳能电池板， 由于在镀膜过程中超薄玻璃衬底仍处于平面形式， 工艺条件都不需要做任何改变， 避免了通常在制造弯曲电^组件时所遇到的 问题和额外成本的增加， 极大的增加了设备和制备工艺方法对各种弯曲电池 组件的普遍适用性。
在本发明优选的实施方式中， 所述弯曲处理采用层压工艺将沉积于所述 超薄玻璃衬底上的所述薄膜太阳能电^与具有一定刚性的弯曲结构相结合， 用以封装所述薄膜太阳能电池， 使其与周围环境相隔绝， 并形成可稳定工作 的弯曲太阳能电池板。 所述层压工艺在高压釜中进行， 或采用曲面真空层压 法进行层压。 所述层压工艺的材料选用 EVA、 PVB或离子键树脂。
在本发明其他优选的实施方式中， 所述弯曲处理采用粘结工艺， 将所述 薄膜太阳能电池板与具有一定刚性的弯曲结构相结合， 形成可稳定工作的弯 曲太阳能电池板。 所述粘结工艺选用杜邦公司生产的 "文泰科" （Vertak)粘结 剂。
所述具有一定刚性的弯曲结构包括已经成型的弯曲玻璃和经表面绝缘处 理后的金属结构件。 在本发明优选的实施方式中， 所述弯曲玻璃为汽车天窗 玻璃、 船用结构玻璃或建筑物玻璃， 所述经表面绝缘处理后的金属结构件包 括汽车车顶结构。 当所述弯曲玻璃为汽车天窗玻璃时， 所述薄膜太阳能电池 的所述栅电极与汽车电源及其负载通过导线相连， 所述负载包括车厢内的风 扇、 照明灯、 电子娱乐系统。
在本发明优选的实施方式中， 所述第一电极和第二电极的透光性相等， 且均为全透明薄膜。 这 4¾高了薄膜太阳能电池板的透光性。 在本发明的其他 实施方式中， 所述第一电极为全透明薄膜， 所述第二电极为非透明薄膜。 所 述非透明薄膜可以将透过光电转换层的光反.射回去， 提高了电池的光吸收率
所述第一电极与第二电极的材料均为透明导电氧化物， 所述透明导电氧 化物为氧化辞、 氧化锡、 氧化锢锡和石墨烯中的一种。
光电转换层包括非晶硅、 微晶硅、 多晶硅和单晶硅薄膜中的一种或多种， 如图 1所示的本发明的优选的实施例中， 光电转换层为由非晶硅 n型摻杂层、 本征层和 p型掺杂层构成的 p— i— n型结构。一般的，光电转换层包含由非晶硅、 微晶硅、 多晶硅或单晶硅薄膜形成的 p n或 p- i- n结单结结构， 或多个 p- n结 及 p i n结的多结结构。 在本发明的其他优选的实施例中， 所述光电转换层包 括蹄化镉薄膜、 铜铟镓镇薄膜和有机半导体薄膜中的一种或多种。 当用于制备所述第一、 第二电极或所述光电转换层的工艺方法的工艺温 度接近玻璃应变点 （ strain point )时， 超薄玻璃容易产生变形， 因而应该尽可 能使工艺温度远离玻璃应变点。 超薄玻璃的应变点的变化范围为 650- 700 °C, 其他超薄玻璃的应变点也在类似的范围内变动。 因此， 所述工艺方法的工艺 温度低于 600 以防止所述超薄玻璃衬底在沉积过程中发生变形。
一般的， 用于制备透明氧化物薄膜的 LPCVD方法的工艺温度为 180-2I0°C, MOCVD方法的工艺温度可低至 500。C, 而 APCVD方法的工艺 温度在 450。C 左右， 用于制备硅基光电转换层薄膜的 PECVD的工艺温度一 般在 30()。C以下， 以上工艺方法都满足工艺温度小于 6()0。C的要求。 因此， 所述第 - 、 第二电极用 LPCVD、 MOCVD或 APCVD工艺方法制备， 所述光 电转换层用 PECVD工艺方法制备。
虽然本发明已以较佳实施例披露如上， 但本发明并非限定于此。 任何本 领域技术人员， 在不脱离本发明的精神和范围内， 均可作各种更动与修改， 因此本发明的保护范围应当以权利要求所限定的范围为准。 对于本领域技术 人.员而言， 显然本.发明不限于上述示范性实施例的细节， 而且在不背离本发 明的精神或基本特征的情况下， 能够以其他的具体形式实现本发明。 因此， 无论从哪一点来看， 均应将实施例看作是示范性的， 而且是非限制性的， 本 发明的范围由所附权利要求而不是上述说明限定， 因此旨在将落在权利要求 的等同要件的含义和范围内的所有变化嚢括在本发明内。 不应将权利要求中 的任何附图标记视为限制所涉及的权利要求。
此外， 应当理解， 虽然本说明书按照实施方式加以描述， 但并非每个实 施方式仅包含一个独立的技术方案， 说明书的这种叙述方式仅仅是为清楚_起 见， 本领域技术人员应当将说明书作为一个整体， 各实施例中的技术方案也 可以经适当组合， 形成本领域技术人员可以理解的其他实施方式。

Claims

1. 一种薄膜太阳能电池板， 包括衬底、 位于所迷衬底上的第一电极、 位于所 述第一电极上的光电转换层、 位于所述光电转换层上的第二电极， 其特征 在于, 还包括栅电极, 所述衬底为超薄玻璃衬底, 所述超.薄玻璃衬底的厚 度为 0.1-1匪,所迷超薄玻璃衬底具有可弯曲性，其最小弯曲半径可达 10cm 以下 , 所述第一电极在形成过程中连续设置在所述衬底上。
2. 如权利要求 1所述的薄膜太阳能电池板， 其特征在于， 所述超薄玻璃村底 的弯曲半径大于 30cm, 所述超薄玻璃衬底的厚度为 0.35-l mm o
3. 如权利要求 1所述的薄膜太阳能电池板， 其特征在于， 所述第一电极为全 透明薄膜， 所述第二电极为非全透明薄膜。
4. 如权利要求 1所述的薄膜太阳能电池板， 其特征在于， 所述第一、 第二电 极的透光性相等， 且均为全透明薄膜。
5. 如权利要求 2至 4中任一项所述的薄膜太阳能电池板， 其特征在于， 所述 第一、 第二电极的材料均为透明导电氧化物， 所述透明导电氧化物包括氧 化锌、 氧化锡、 氧化铟锡和石墨烯中的一种。
6. 如权利要求 5所述的薄膜太阳能电池板， 其特征在于， 所述光电转换层包 括非晶硅、 微晶硅、 多晶硅和单晶硅薄膜中的一种或多种， 所述非晶硅、 微晶硅、 多晶硅或单晶硅薄膜形成包含一个 p n或 p i n结的单结结构， 或 包含多个 p— n或 p— i— n结的多结结构。
7. 如权利要求 5所述的薄膜太阳能电沌板， 其特征在于， 所述光电转换层包 括碲化镉薄膜、 铜锢镓锡薄膜和有机半导体薄膜中的一种或多种。
8. 如权利要求 7所述的薄膜太阳能电池板， 其特征在于， 所述薄膜太阳能电 池用于汽车、 船舶或各种建筑一体化结构中。
. 如权利要求 8所述的薄膜太阳能电池板， 其特征在于， 所述薄膜太阳能电 池板用于汽车天窗， 所述柵电极与汽车电源系统及其负载通过导线相连， 所述负载包括车厢内的风扇、 照明灯和电子娱乐系统。
0.如权利要求 8所述的薄膜太阳能电沌板， 其特征在于， 所述薄膜太阳能电 沌板用于汽车天窗， 所述衬底的弯曲半径大于 lm。
丄如权利要求 10所述的薄膜太阳能电池板， 其特征在于， 所述汽车天窗包括 汽车天窗玻璃， 所述汽车天窗玻璃具有朝向车内的下表面以及朝向车外的 上表面， 所述薄膜太阳能电池板应貼合在所述汽车天窗玻璃的上表面上， 所述光电转换层包括 P型层、 N型层， 所述 P型层紧邻所述第一电极设置。
2,如权利要求 10所述的薄膜太阳能电池板， 其特征在于， 所述汽车天窗包括 汽车天窗玻璃， 所述汽车天窗玻璃具有朝向车内的下表面以及朝向车外的 上表面， 所述薄膜太阳能电池板应贴合在所述汽车天窗玻璃的下表面上， 所述光电转换层包括 P型层、 N型层，所述 N型层紧邻所述第一电极设置。
3,如权利要求 8所述的薄膜太阳能电池板， 其特征在于， 所述薄膜太阳能电 池板用于船舶或建筑一体化结构， 所迷衬底的弯曲半径大于 30cm。
4,如权剩要求 1-13 中任一项所述的薄膜太阳能电池板的制备方法包括：
SL 提供一超薄玻璃衬底， 所述超薄玻璃衬底的厚度为 0。i- imm, 所述超. 薄玻璃衬底具有可弯曲性， 其最小弯曲半径可达 10cm 以下；
52.在所述超薄玻璃衬底上依次沉积第一电极、 光电转换层和第二电极；
53. 对所述第一电极、 光电转换层和第二电极沉积完成后， 用激光分別刻 线， 用以将所述太阳能电池分割成诸多较小的电池单位并形成串并连接 , 用以降低电阻损耗， 提高电池的能量转换效率；
54. 对所述电池结构做激光或化学刻蚀处理， 用以增加所迷电池结构的透 光性；
55. 设置所述栅电极， 形成薄膜太阳能电池；
56. 对所述太阳能电;'也板进行弯曲处理。
如权利要求 14所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述弯 曲处理采用层压工艺将沉积于所述超薄玻璃衬底上的所述薄膜太阳能电池 与具有一定刚性的弯曲结构相结合， 用以封装所述薄膜太阳能电池， 使其 与周围环境相隔绝， 并形成可稳定工作的弯曲太阳能电池板。
如权利要求 14所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述弯 曲处理采用粘结工艺， 将所述薄膜太阳能电池板与具有一定 性的弯曲结 构相结合， 形成可稳定工作的弯曲太阳能电池板。
如权利要求 14所迷的薄膜太阳能电池板的制备方法, 其特征在于， 所述第 一电极为全透明薄膜， 所述第二电极为非全透明薄膜。
如权利要求 14所述的薄膜太阳能电池的制备方法，其特征在于，所述第一、 第二电极的透光性相等， 且均为全透明薄膜。
如权剩要求 17或 18中任一项所述的薄膜太阳能电池板的制备方法， 其特 征在于， 所述第一、 第二电极的材料为透明导电氧化物， 所述透明导电氧 化物为氧化锌、 氧化锡、 氧化铟锡和石墨烯中的一种。
如权利要求 19所迷的薄膜太阳能电池板的制备方法, 其特征在于， 所述第 一、 第二电极制备工艺温度低于 600° (：。
如权利要求 20所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述第 -一电极与第二电极采用 LPCVD、 MOCVD或 APCVD工艺方法制备。 ,如权利要求 21所迷的薄膜太阳能电池板的制备方法，其特征在于, 所述光 电转换层包括非晶硅、 微晶硅、 多晶硅和单晶硅薄膜中的一种或多种， 所 述非晶硅、 微晶硅、 多晶硅或单晶硅薄膜形成包含一个 p- n或 p- i- n结的单 结结构 , 或包含多个 -n或 -i-n结的多结结构。
.如权利要求 22所迷的薄膜太阳能电池板的制备方法 , 其特征在于， 所述光 电转换层的制备工艺的工艺温度低于 600° (。
.如权利要求 23所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述光 电转换层采用 PECVD方法制备。
,如权剩要求 14所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述光 电转换层包括碲化镉薄膜、 铜锢镓锡薄膜和有机半导体薄膜中的一种或多 .如权利要求 15所迷的薄膜太阳能电池板的制备方法, 其特征在于， 所述具 有一定刚性的弯曲结构包括已经成型的弯曲玻璃和经表面绝缘处理后的金 属结构件。
,如权利要求 26迷的薄膜太阳能电池板的制备方法, 其特征在于， 所述弯曲 玻璃为汽车天窗玻璃、 船用结构玻璃或建筑物玻璃， 所述经表面绝缘处理 后的金属结构件包括汽车车顶结构。
,如权刺要求 27所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述弯 曲玻璃为汽车天窗玻璃， 所述薄膜太阳能电沌的所述柵电极与汽车电源系 统及其负载通过导线相连， 所述负载包括车厢内的风扇、 照明灯、 电子娱 乐系统。
.如权利要求 26所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述层 压工艺在高压釜中进行， 或采用曲面真空层压法进行层压。
30, 如权利要求 29所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述 层压工艺的材料选用 E PVB或离子键树脂。
31. 如权利要求 16所述的薄膜太阳能电池板的制备方法， 其特征在于， 所述 粘结工艺选用杜邦公司生产的 "文泰科" 粘结剂。
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