CN104916722B - 曲面太阳能汽车天窗及其制造方法 - Google Patents
曲面太阳能汽车天窗及其制造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 12
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 239000005361 soda-lime glass Substances 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 238000004132 cross linking Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010329 laser etching Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000013081 microcrystal Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 230000001815 facial effect Effects 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 32
- 239000012790 adhesive layer Substances 0.000 abstract description 4
- 238000010248 power generation Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000005357 flat glass Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 2
- 238000013475 authorization Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007688 edging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/042—PV modules or arrays of single PV cells
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Abstract
本发明涉及具有太阳能发电功能的汽车天窗结构和制造方法,具体是一种曲面太阳能汽车天窗及其制造方法。它包括有曲面形状的单层或双层天窗玻璃,在单层天窗玻璃内侧或双层天窗玻璃之间复合有太阳能电池片,所述太阳能电池片包括有一层曲面形状与天窗玻璃相同或相近的超薄玻璃衬底,在超薄玻璃衬底上依次镀有第一电极、光电转换层和第二电极;太阳能电池片通过粘合层与天窗玻璃粘合。本发明在合片过程中可以大大减少因为应力导致的生产过程中裂片破损等问题,提高了良品率,降低了制造成本。
Description
技术领域
本发明涉及具有太阳能发电功能的汽车天窗结构和制造方法,具体是一种曲面太阳能汽车天窗及其制造方法。
背景技术
太阳能车顶系统是太阳能发电技术与汽车工业结合的产物。将太阳能电池或者太阳能组件内嵌到汽车顶上接受太阳光照的区域,能够将太阳光转化成电能,用来支持在发动机停止工作时,仍然需要电能支撑的一些功能,例如高温天气的车内通风,污染环境下的车内空气净化,汽车安防系统,车载冰箱等,从而减少这些功能对蓄电池的依赖,降低蓄电池的损耗。随着电动汽车的兴起,以及太阳能技术的发展,将太阳能车顶系统产生的电量用作汽车动力也已经变成现实。太阳能车顶系统不仅提高了汽车的舒适性,而且能够带来明显的电能和燃油的节省,减少二氧化碳的排放。
汽车太阳能天窗制作最大的难点在于天窗的外形大多为曲面设计,而太阳能电池片或者太阳能组件多为平面结构,要使平面材料贴合到曲面的外表面或者内表面,通常要使平面材料发生一定的塑性形变,如授权公告号为CN100361318C的中国发明专利提出了采用弧面层压模具将通过串联/并联形成的太阳能组件层压到太阳能汽车天窗上形成一体化结构。太阳能电池所采用的单晶硅片,多晶硅片,以及以玻璃为衬底的非晶硅,碲化镉和CIGS等多为脆性材料,这种塑性形变产生的应力使得脆性材料容易在生产过程中破损,导致产品的良品率低下,是太阳能汽车天窗无法大规模推广的原因之一。授权公告号为CN101192630B的中国发明专利提出了能够防止太阳能电池在弧形层压过程中破碎和相对于天窗玻璃移位的太阳能电池天窗及其制造方法,该方法采用了制作工艺难度很大成本很高的带弧度的多平面玻璃,即将天窗玻璃一侧的圆弧磨成多边形,每条边对应一个平面。上述方法对于拱形(一维弯曲)的天窗具有一定的意义,对于穹顶型(二维弯曲)天窗来说,此方法无法同时弥补两个方向的弯曲,而现实上,大多数汽车天窗都是穹顶型的。专利公开号CN 103296114A的中国发明专利提出了薄膜太阳能电池与汽车天窗结合的结构和制作方法。薄膜电池先沉积在超薄的玻璃上,再通过层压实现与汽车天窗的结合。厚度在1mm以下的超薄玻璃具有可弯曲性,因此在合片的过程中超薄玻璃可以贴合到汽车天窗玻璃的弯曲表面。此方法适用于弯曲程度不高的汽车天窗,当汽车天窗尺寸越来越大,特别是穹顶型天窗的出现,使得天窗玻璃的弯曲程度大大增加,仍然采用上述方法将超薄玻璃与天窗玻璃贴合会导致薄玻璃边缘受到很大的应力而破裂,或者导致天窗的中央部分玻璃与玻璃结合不充分,引起气泡或者空鼓。
发明内容
本发明所要解决的技术问题是,提供一种能够提高太阳能电池与汽车天窗玻璃复合的良品率、制造工艺简单、制造成本低的曲面太阳能汽车天窗及其制造方法。
本发明的曲面太阳能汽车天窗包括有曲面形状的单层或双层天窗玻璃,在单层天窗玻璃内侧或双层天窗玻璃之间复合有太阳能电池片,所述太阳能电池片包括有一层曲面形状与天窗玻璃相同或相近的超薄玻璃衬底,在超薄玻璃衬底上依次镀有第一电极、光电转换层和第二电极;太阳能电池片通过粘合层与天窗玻璃粘合。
所述超薄玻璃衬底的材料为未强化的钠钙玻璃,或者经过化学强化的钠钙玻璃,或者经过化学强化的铝硅酸盐玻璃,或者硼硅酸盐玻璃。
所述第一电极和第二电极为透明导电氧化物薄膜或金属薄膜。
所述太阳能电池片上具有将部分镀层去除形成的透光线,透光线的宽度为 30~100um,线与线之间的距离为 60~1000um。
本发明的曲面太阳能汽车天窗的制造方法包括以下步骤:
步骤1,将厚度为0.2~1.0mm的超薄玻璃切割到汽车天窗所需的外观尺寸,作为太阳能电池的玻璃衬底;
步骤2,将该超薄玻璃衬底置于一个具有一定曲面形状的金属模具上,该模具表面的曲面轮廓与要合片的汽车天窗的曲面轮廓一致或相近,将模具加热到玻璃软化温度使玻璃形成与模具相同的弧度,随后缓慢冷却至室温形成具有曲面形状的玻璃衬底;
步骤3,在具有曲面形状的玻璃衬底上镀膜,依次形成常规太阳能电池所具备的第一电极、光电转换层、第二电极,形成太阳能电池结构;
步骤4,在太阳能电池结构的正负极分别铺设汇流条,形成薄膜电池模组,同时将正负极的汇流条引出到玻璃外部形成正负极端子;
步骤5,薄膜电池模组与汽车天窗玻璃堆叠在一起,中间通过粘合材料粘接在一起,制成太阳能天窗。
所述步骤3和步骤4之间,通过激光或者化学刻蚀处理去除太阳能电池结构上部分区域的薄膜形成透光线,以提高整体的透光率。
所述步骤5中,粘合步骤为:将薄膜电池模组与汽车天窗玻璃堆叠在一起,中间通过乙烯-醋酸乙烯酯共聚物EVA或者聚乙烯醇缩丁醛PVB隔开,通过层压或高压釜排除电池与天窗玻璃之间的空气,升高到EVA交联温度或者PVB流动温度,使薄膜电池与天窗玻璃之间通过EVA或者PVB粘接在一起。
所述粘合材料为乙烯-醋酸乙烯酯共聚物EVA或聚乙烯醇缩丁醛PVB,用以将薄膜太阳能电池模组与天窗玻璃粘接在一起。
所述玻璃衬底为未强化的钠钙玻璃,或者经过化学强化的钠钙玻璃,或者经过化学强化的铝硅酸盐玻璃,或者为硼硅酸盐玻璃。
所述第一电极和第二电极采用透明导电氧化物薄膜,所述透明导电氧化物薄膜为掺锡氧化铟ITO、掺铝氧化锌AZO、掺硼氧化锌BZO、掺镓氧化锌GZO、掺氟氧化锡FTO中的一种。
所述第一电极或第二电极也可采用金属薄膜;优选的,在铜铟镓硒的太阳能电池中,第一电极采用金属薄膜,所述金属薄膜采用钼Mo。
所述光电转换层是由非晶硅、微晶硅、非晶硅锗薄膜中的一种或多种构成的具有P型层、本征层和N型层的半导体多层结构。
所述光电转换层也可以是由碲化镉薄膜、铜铟镓锡薄膜、有机半导体薄膜中的一种或多种构成的具有窗口层和吸收层的半导体多层结构;当采用铜铟镓锡薄膜作为吸收层时,第一电极为钼金属薄膜。
所述透光线的宽度在 30~100um之间,线与线之间的距离在 60~1000um之间,通过调整透光线宽度和线与线之间的距离满足不同的透光率要求。
本发明的方法及产品将光电转化层和导电层是沉积在与天窗玻璃具有相同或相近曲面形状的超薄玻璃衬底上,表面弯曲的预先引入减少了天窗玻璃和太阳能电池在合片过程中由于弧度的差异引起的边缘应力,可以大大减少因为应力导致的生产过程中裂片破损等问题,提高了良品率,降低了制造成本。在一般情况下,预先引入的弯曲程度较小,薄膜沉积设备通常无须进行改造,可直接使用常见的平板镀膜设备,通过适当调整镀膜工艺,如延长衬底预热时间等,可以实现较均匀镀膜,对电池效率的负面影响可忽略。
附图说明
图1是本发明实施例一的截面结构示意图;
图2是本发明实施例二的截面结构示意图;
图3是本发明实施例三的截面结构示意图。
具体实施方式
实施例一:制造不透光单层天窗玻璃的太阳能天窗。
汽车天窗玻璃具有跟车顶相一致的表面弧度,天窗玻璃的厚度在4mm,为钢化玻璃;
将0.7mm厚的钠钙(Soda lime)玻璃切割成汽车天窗的尺寸,边缘略比汽车天窗玻璃缩进3~5mm;
对上述玻璃进行磨边处理,将处理后的玻璃放置于加热模具中,加热到550~650度使玻璃软化,等待玻璃与模具完全贴合,开始冷却直到室温;
取出成型的薄玻璃,在镀膜设备里面进行第一电极透明导电薄膜掺硼氧化锌的沉积,沉积厚度在1500~2500nm,方块电阻在8~15ohm/sq;为了实现在有一定弧度的玻璃上均匀镀膜,通常将玻璃预热时间延长1倍以上(与平板玻璃镀膜相比),保证玻璃均匀地升高到预设温度;在第一电极之上进行光电转化层的沉积,沉积的结构依次是N型非晶硅30~40nm,本征非晶硅200~350nm,P型非晶硅10~20nm;在P型非晶硅之上进行第二电极透明导电薄膜掺硼氧化锌的沉积,沉积厚度在1500~2500nm,方块电阻在10~20ohm/sq;并通过激光划线将薄膜分隔成若干子电池并实现所有电池之间的串联,在电池的正负极铺设汇流带,以引出到天窗的外部,至此完成太阳能电池结构。
将薄玻璃的镀膜面朝向汽车天窗玻璃的内侧,中间夹一层厚度为0.3~0.8mm的PVB胶膜作为粘合层材料,通过层压将太阳能电池与汽车天窗玻璃粘合在一起,具体的,加热到160度使PVB融化将太阳能电池与天窗玻璃粘合,加热的过程中同时抽真空,排除电池与玻璃之间的空气。层压完毕后再通过高压釜加压到10个大气压,升温到120度左右,将残余的气泡消除,形成颜色均匀的太阳能天窗。
制成的太阳能天窗截面结构如图1所示,其结构由外至内依次为天窗玻璃1、粘合层2、第二电极3、光电转化层4、第一电极5、超薄玻璃衬底6。
实施例二:透光的单层天窗玻璃,如图2所示,其与实施例一的结构相似,均包括由外至内的天窗玻璃1、粘合层2、第二电极3、光电转化层4、第一电极5、超薄玻璃衬底6,但在超薄玻璃衬底上的镀层具有透光线7。
实施例三:制造夹层太阳能天窗。
汽车天窗玻璃具有跟车顶相一致的表面弧度,天窗玻璃有两块,天窗为夹层玻璃结构,两块玻璃的厚度都为2.1mm,为半钢化玻璃;
将0.4mm厚的钠钙(Soda lime)玻璃切割成汽车天窗的尺寸,边缘略比汽车天窗玻璃缩进3~5mm;
对上述玻璃进行磨边处理,将处理后的玻璃放置于加热模具中,加热到550~650度使玻璃软化,等待玻璃与模具完全贴合,开始冷却直到室温;
取出成型的薄玻璃,在镀膜设备里面进行第一电极透明导电薄膜掺硼氧化锌的沉积,沉积厚度在1500~2500nm,方块电阻在10~20ohm/sq;为了实现在有一定弧度的玻璃上均匀镀膜,通常将玻璃预热时间延长1倍以上(与平板玻璃镀膜相比),保证玻璃均匀地升高到预设温度;在第一电极之上进行光电转化层的沉积,沉积的结构依次是P型非晶硅10~20nm,本征非晶硅200~350nm,N型非晶硅30~40nm;在N型非晶硅之上进行第二电极透明导电薄膜掺硼氧化锌的沉积,沉积厚度在1500~2500nm,方块电阻在8~15ohm/sq;并通过激光划线将薄膜分隔成若干子电池并实现所有电池之间的串联;
为了实现天窗的透光效果,通过激光刻蚀的方式去除部分光电转化层和光电转化层之上的第二电极,形成透光线7。具体的方法是选取非晶硅吸收强烈的绿光激光器,采用脉冲烧蚀的方法,通过高能量的激光将非晶硅气化,同时带走非晶硅上方的掺硼氧化锌材料。每隔300um距离刻蚀一条60um宽的沟道露出下面的透明导电薄膜,可以实现20%的透光率;
在电池的正负极铺设汇流带,以引出到天窗的外部,以完成电池结构;
此实施例中的天窗为夹层天窗,因此需要将太阳能电池通过前后各一张PVB胶膜与前后各一块天窗玻璃粘合在一起。具体的采用0.3~0.8mm的PVB胶膜,通过层压将太阳能电池与汽车天窗玻璃粘合在一起,即加热到160度使PVB融化将太阳能电池与天窗玻璃粘合,加热的过程中同时抽真空,排除电池与玻璃之间的空气。层压完毕后再通过高压釜加压到10个大气压,升温到120度左右,将残余的气泡消除,形成颜色均匀的太阳能天窗。
制成的太阳能天窗截面结构如图3所示,其结构由外至内依次为天窗玻璃1、粘合层2、超薄玻璃衬底6、第一电极5、光电转化层4、第二电极3、粘合层2、天窗玻璃1;同时,超薄玻璃衬底上的镀层具有透光线7。
Claims (10)
1.一种曲面太阳能汽车天窗的制造方法,其特征是:包括以下步骤,
步骤1,将厚度为0.2~1.0mm的超薄玻璃切割到汽车天窗所需的外观尺寸,作为太阳能电池的玻璃衬底;
步骤2,将该超薄玻璃衬底置于一个具有一定曲面形状的金属模具上,该模具表面的曲面轮廓与要合片的汽车天窗的曲面轮廓一致,将模具加热到玻璃软化温度使玻璃形成与模具相同的弧度,随后缓慢冷却至室温形成具有曲面形状的玻璃衬底;
步骤3,在具有曲面形状的玻璃衬底上镀膜,依次形成常规太阳能电池所具备的第一电极、光电转换层、第二电极,形成太阳能电池结构;
步骤4,在太阳能电池结构的正负极分别铺设汇流条,形成薄膜电池模组,同时将正负极的汇流条引出到玻璃外部形成正负极端子;
步骤5,薄膜电池模组与汽车天窗玻璃堆叠在一起,中间通过粘合材料粘接在一起,制成太阳能天窗。
2.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述步骤3和步骤4之间,通过激光或者化学刻蚀处理去除太阳能电池结构上部分区域的薄膜形成透光线,以提高整体的透光率。
3.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述步骤5中,粘合方法为:将薄膜电池模组与汽车天窗玻璃堆叠在一起,中间通过乙烯-醋酸乙烯酯共聚物EVA或者聚乙烯醇缩丁醛PVB隔开,通过层压或高压釜排除电池与天窗玻璃之间的空气,升高到EVA交联温度或者PVB流动温度,使薄膜电池与天窗玻璃之间通过EVA或者PVB粘接在一起。
4.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述粘合材料为乙烯-醋酸乙烯酯共聚物EVA或聚乙烯醇缩丁醛PVB。
5.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述玻璃衬底为未强化的钠钙玻璃,或者经过化学强化的钠钙玻璃,或者经过化学强化的铝硅酸盐玻璃,或者硼硅酸盐玻璃。
6.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述第一电极和第二电极采用透明导电氧化物薄膜,所述透明导电氧化物薄膜为掺锡氧化铟ITO、掺铝氧化锌AZO、掺硼氧化锌BZO、掺镓氧化锌GZO、掺氟氧化锡FTO中的一种。
7.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述第一电极或第二电极为金属薄膜。
8.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述光电转换层是由非晶硅、微晶硅、非晶硅锗薄膜中的一种或多种构成的具有P型层、本征层和N型层的半导体多层结构。
9.根据权利要求1所述的曲面太阳能汽车天窗的制造方法,其特征是:所述光电转换层是由碲化镉薄膜、铜铟镓锡薄膜、有机半导体薄膜中的一种或多种构成的具有窗口层和吸收层的半导体多层结构;当采用铜铟镓锡薄膜作为吸收层时,第一电极为钼金属薄膜。
10.根据权利要求2所述的曲面太阳能汽车天窗的制造方法,其特征是:所述透光线的宽度在30~100um之间,线与线之间的距离在60~1000um之间。
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