WO2014166159A1 - 液晶像素电极结构、阵列基板及显示装置 - Google Patents

液晶像素电极结构、阵列基板及显示装置 Download PDF

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WO2014166159A1
WO2014166159A1 PCT/CN2013/077343 CN2013077343W WO2014166159A1 WO 2014166159 A1 WO2014166159 A1 WO 2014166159A1 CN 2013077343 W CN2013077343 W CN 2013077343W WO 2014166159 A1 WO2014166159 A1 WO 2014166159A1
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pixel electrode
electrode
liquid crystal
common electrode
common
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PCT/CN2013/077343
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English (en)
French (fr)
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文钟源
黄强
朴台圭
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合肥京东方光电科技有限公司
京东方科技集团股份有限公司
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Priority to US14/352,190 priority Critical patent/US20150212372A1/en
Publication of WO2014166159A1 publication Critical patent/WO2014166159A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Definitions

  • Liquid crystal pixel electrode structure, array substrate and display device Liquid crystal pixel electrode structure, array substrate and display device
  • Embodiments of the present invention relate to a liquid crystal pixel electrode structure, an array substrate, and a display device. Background technique
  • AD-SDS ADvanced Super Dimension Switch, advanced super-dimensional field conversion technology, cartridge ADS
  • TN Transmissiontance
  • Nematic Nematic LCD mode
  • the liquid crystal display based on the ADS mode forms a multi-dimensional electric field by the electric field generated by the edge of the slit electrode in the same plane and the electric field generated by the slit electrode layer and the plate electrode layer, so that the slit electrode between the liquid crystal cell and the slit electrode are positive All of the aligned liquid crystal molecules above can generate rotation, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency.
  • Advanced super-dimensional field conversion technology can improve the picture quality of TFT-LCD products, with high resolution, high transmittance, low power consumption, wide viewing angle, high aperture ratio, low chromatic aberration, push-free water ripple (push Mura), etc. advantage.
  • the structure of the existing ADS mode display panel is as shown in FIG. 1 , including a color filter substrate 2 , an array substrate 3 , and a liquid crystal 1 interposed between the two substrates after the two substrates are paired with the case, wherein the array substrate 3 is further
  • the pixel electrode 4 (corresponding to the slit electrode), the common electrode 5, and the passivation layer 6 are included.
  • the left side of the dotted line in Figure 1 indicates the state in which no voltage is applied, and the right side indicates the state in which the voltage is applied.
  • the light transmittance characteristics of the liquid crystal pixel electrode structure of the existing ADS mode are as shown by the curve in FIG. 2, the light transmittance is the largest at the edge of the pixel electrode, and between the adjacent pixel electrodes and the middle of the pixel electrode, light The transmission rate is extremely small.
  • a single pixel electrode completely covers the common electrode design.
  • the electrode is usually an ITO film.
  • the light transmittance of ITO is about 91%, so the light passes through the pixel electrode and the common electrode.
  • the film has a transmittance of about 80% and a loss of nearly 20%.
  • the electric field at the intermediate position between the adjacent pixel electrodes and the pixel electrode is weak, and a higher driving voltage is required to secure the liquid crystal driving.
  • Embodiments of the present invention provide a liquid crystal pixel electrode structure, an array substrate, and a display device, which can solve one or more of the technical problems existing in the prior art, such as reducing driving voltage, reducing power consumption, and improving existing ADS mode. Light transmission rate.
  • a liquid crystal pixel electrode structure includes a first pixel electrode and a second pixel electrode and a common electrode, and the first pixel electrode and the second pixel electrode are sequentially spaced apart and located Above the common electrode, the driving voltages of the first pixel electrode and the second pixel electrode are different, and an absolute value of the absolute voltage difference is formed between the common electrode and the common electrode.
  • the common electrode may be a slit electrode.
  • the position of the opening of the slit electrode may correspond to the position of the first pixel electrode or the second pixel electrode.
  • the area of the opening may be smaller than the area of the corresponding first pixel electrode or the second pixel electrode.
  • the first pixel electrode and the second pixel electrode may be made of an ITO material.
  • the common electrode may be made of an ITO material.
  • the liquid crystal pixel electrode structure may further include a passivation layer between the common electrode and the first pixel electrode and the second pixel electrode.
  • Embodiments of the present invention also provide an array substrate including the liquid crystal pixel electrode structure described above. Embodiments of the present invention also provide a display device including the above array substrate.
  • an electric field can be generated between the two pixel electrodes, and the two electrodes can also generate an electric field with the common electrode, respectively.
  • the combination of the two electric fields can reduce the demand for the driving voltage and reduce the energy consumption.
  • the common electrode may employ a slit electrode, so that the light transmittance is improved.
  • 1 is a structural view of a display panel of an existing ADS mode
  • FIG. 2 is a characteristic curve of light transmittance of a liquid crystal pixel electrode structure of a conventional ADS mode
  • FIG. 3 is a schematic diagram of a liquid crystal pixel electrode structure in an ADS mode according to an embodiment of the present invention
  • FIG. 4 is a schematic illustration of the drive voltages that need to be provided in one embodiment of the invention
  • FIG. 5 is a characteristic curve of light transmittance of a liquid crystal pixel electrode structure of an ADS mode according to an embodiment of the present invention. detailed description
  • the liquid crystal pixel electrode structure includes: a first pixel electrode 7 and a second pixel electrode 8, and a common electrode 9, wherein the first pixel The electrode 7 and the second pixel electrode 8 are sequentially spaced apart and located above the common electrode 9.
  • the driving voltages of the first pixel electrode 7 and the second pixel electrode 8 may be different, and an electric field is generated between them, and the electric field line is marked as 10.
  • the first pixel electrode 7 and the second pixel electrode 8 can respectively generate an electric field with the common electrode 9, and the electric field line is labeled 11.
  • the first pixel electrode 7 and the second pixel electrode 8 may each form an equal voltage difference with the common electrode 9.
  • the driving voltages supplied to the first pixel electrode 7 and the second pixel electrode 8 may be 8V and 0V, respectively, and the driving voltage supplied to the common electrode 9 may be 4V, and then the first pixel electrode 7 and the second pixel electrode 8 The voltage difference between them is 8V, and the absolute value of the voltage difference between the two types of pixel electrodes and the common electrode 9 is 4V.
  • Figure 4 is a schematic illustration of the drive voltages that need to be provided in one embodiment of the present invention.
  • the numerical values of the driving voltages shown in Fig. 4 are merely examples, and the present invention is not limited thereto.
  • the embodiment of the present invention utilizes the electric field effect between the first pixel electrode 7 and the second pixel electrode 8, and by the combined action of the two electric fields (10 and 11), the demand for the driving voltage is reduced, and the energy is reduced. Consumption.
  • the first pixel electrode 7 and the second pixel electrode 8 may be made of an ITO material, and the common electrode 9 may also be made of an ITO material.
  • the liquid crystal pixel electrode structure may further include a passivation layer between the common electrode 9 and the first pixel electrode 7 and the second pixel electrode 8.
  • the common electrode 9 may be a slit electrode, and the position of the opening of the slit electrode may correspond to the position of the first pixel electrode 7 or the second pixel electrode 8.
  • the area of the opening may be smaller than the area of the corresponding first pixel electrode 7 or second pixel electrode 8.
  • S is the area where the common electrode overlaps with the corresponding pixel electrode
  • d is the distance between the common electrode and the pixel electrode.
  • the characteristic curve of the light transmittance of the liquid crystal pixel electrode structure of the ADS mode provided by the embodiment of the present invention is as shown in FIG. As can be seen from Fig. 5, the light transmittance between adjacent pixel electrodes and between the pixel electrodes is improved as compared with the prior art.
  • Embodiments of the present invention also provide an array substrate including the liquid crystal pixel electrode structure described above.
  • Embodiments of the present invention also provide a display device including the above array substrate.
  • the above description is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can make several improvements and substitutions without departing from the technical principles of the present invention. It should also be considered within the scope of the present invention.

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Abstract

公开了一种液晶像素电极结构、阵列基板及显示装置。像素电极结构包括：第一像素电极（7）和第二像素电极（8）、以及公共电极（9），第一像素电极（7）和第二像素电极（8）依次间隔排布，且位于公共电极（9）上方，第一像素电极（7）和第二像素电极（8）的驱动电压不同，且分别与公共电极（9）之间形成相等的电压差绝对值。两种像素电极相互可以产生电场，同时这两种电极也可以分别与公共电极（9）产生电场，两种电场综合起来可降低驱动电压的需求，减少能耗。此外，公共电极采用狭缝电极，光透过率得到提升。

Description

液晶像素电极结构、 阵列基板及显示装置 技术领域
本发明的实施例涉及一种液晶像素电极结构、 阵列基板及显示装置。 背景技术
在液晶显示技术中， AD-SDS ( ADvanced Super Dimension Switch, 高级 超维场转换技术， 筒称 ADS )模式以透过率高、 宽视角、 响应速度快和功耗 低的优点逐渐取代 TN ( Twisted Nematic )液晶模式， 成为液晶显示领域的重 要技术之一。
基于 ADS模式的液晶显示器通过同一平面内狭缝电极的边缘所产生的 电场以及狭缝电极层与板状电极层产生的电场形成多维电场， 使液晶盒内狭 缝电极之间、 狭缝电极正上方的所有取向液晶分子都能够产生旋转， 从而提 高了液晶工作效率并增大了透光效率。 高级超维场转换技术可以提高 TFT-LCD产品的画面品质， 具有高分辨率、 高透过率、 低功耗、 宽视角、 高 开口率、 低色差、 无挤压水波纹（ push Mura )等优点。
现有 ADS模式显示面板的结构如图 1所示， 包括彩膜基板 2、 阵列基板 3、 以及在这两个基板对盒之后灌注在这两个基板之间的液晶 1 , 其中阵列基 板 3还包括像素电极 4 (相当于狭缝电极 )、 公共电极 5以及钝化层 6。 图 1 中虚线左边表示未加电压的状态， 右边表示加电压的状态。 当加电压时， 盒 内电场线呈抛物线状， 液晶分子在该电场线的作用下发生扭曲旋转， 从而达 到控制光线的目的。 现有 ADS模式的液晶像素电极结构的光透过率特性如 图 2中曲线所示， 光透过率在像素电极的边缘处最大， 而在相邻像素电极之 间和像素电极中间处， 光透过率极小。
在现有的 ADS模式中， 采用单个像素电极完全覆盖公共电极的设计， 电极通常是一层 ITO薄膜， ITO的光透过率约为 91%, 所以光线经过像素电 极和公共电极这两层 ITO薄膜的透过率约为 80%, 损耗接近 20%。 此外， 现 有 ADS模式中在相邻像素电极之间和像素电极的中间位置处的电场较弱， 需要较高的驱动电压才能保证液晶驱动。 发明内容
本发明的实施例提供一种液晶像素电极结构、 阵列基板及显示装置， 能 够解决现有技术中存在的技术问题中的一个或多个， 如降低驱动电压、 减少 能耗以及提高现有 ADS模式的光透过率。
根据本发明的一个方面， 提供一种液晶像素电极结构， 该液晶像素电极 结构包括第一像素电极和第二像素电极以及公共电极， 第一像素电极和第二 像素电极依次间隔排布， 且位于所述公共电极上方， 第一像素电极和第二像 素电极的驱动电压不同， 且分别与公共电极之间形成相等的电压差绝对值。
在实施例中， 公共电极可以为狭缝电极。
在实施例中， 狭缝电极的开口的位置可以对应于第一像素电极或者第二 像素电极的位置。
在实施例中， 所述开口的面积可以小于相应的第一像素电极或者第二像 素电极的面积。
在实施例中， 第一像素电极和第二像素电极可以由 ITO材料制成。 在实施例中， 公共电极可以由 ITO材料制成。
在实施例中， 该液晶像素电极结构还可以包括位于公共电极与第一像素 电极及第二像素电极之间的钝化层。
本发明的实施例还提供一种阵列基板， 包括上述的液晶像素电极结构。 本发明的实施例还提供一种显示装置， 包括上述的阵列基板。
在本发明的实施例中， 两种像素电极之间可以产生电场， 同时这两种电 极也可以分别与公共电极产生电场， 这两种电场综合起来可以降低对驱动电 压的需求， 减少能耗。 此外， 在本发明的实施例中， 公共电极可以采用狭缝 电极， 使得光透过率得到提升。 附图说明
图 1是现有 ADS模式的显示面板的结构图；
图 2是现有 ADS模式的液晶像素电极结构的光透过率的特性曲线； 图 3是本发明实施例提供的一种 ADS模式下的液晶像素电极结构的示 意图；
图 4是在本发明的一个实施例中所需提供的驱动电压的示意图； 图 5是本发明实施例提供的 ADS模式的液晶像素电极结构的光透过率 的特性曲线。 具体实施方式
下面结合附图和实施例， 对本发明的具体实施方式作进一步详细描述。 以下实施例用于说明本发明， 而不意在限制本发明的范围。
图 3是本发明实施例提供的一种 ADS模式下的液晶像素电极结构的示意 图， 该液晶像素电极结构包括： 第一像素电极 7和第二像素电极 8、 以及公 共电极 9, 其中第一像素电极 7和第二像素电极 8依次间隔排布， 且位于公 共电极 9上方。
第一像素电极 7和第二像素电极 8的驱动电压可以不同， 它们之间会产 生电场， 其电场线标记为 10。 同时， 第一像素电极 7和第二像素电极 8又可 以分别与公共电极 9产生电场， 其电场线标记为 11。
在本发明的一个实施例中， 第一像素电极 7和第二像素电极 8可以分别 与公共电极 9形成相等的电压差。 例如， 向第一像素电极 7和第二像素电极 8提供的驱动电压可以分别为 8V和 0V, 向公共电极 9提供的驱动电压可以 为 4V, 则第一像素电极 7和第二像素电极 8之间的电压差为 8V, 而这两种 像素电极与公共电极 9之间的电压差的绝对值均为 4V。图 4是在本发明的一 个实施例中所需提供的驱动电压的示意图。 当然， 图 4中示出的驱动电压的 数值仅是示例， 本发明不限于此。
由于现有 ADS模式中在相邻像素电极之间和像素电极的中间位置的电 场较弱， 所以需要较高的驱动电压来保证液晶驱动。 然而， 本发明的实施例 利用了第一像素电极 7和第二像素电极 8之间的电场作用，通过两种电场（ 10 和 11 ) 的综合作用， 降低了对驱动电压的需求， 减少了能耗。
第一像素电极 7和第二像素电极 8可以由 ITO材料制成， 公共电极 9也 可以由 ITO材料制成。 该液晶像素电极结构还可以包括位于公共电极 9与第 一像素电极 7及第二像素电极 8之间的钝化层。
在本发明的实施例中， 公共电极 9可以为狭缝电极， 该狭缝电极的开口 的位置可以对应于第一像素电极 7或者第二像素电极 8的位置。 备选地， 所 述开口的面积可以小于相应的第一像素电极 7或者第二像素电极 8的面积。
由于公共电极被刻蚀掉一部分区域， 使得光线无需透过两层 ITO电极， 从而提升了透过率。 同时， 由于公共电极的面积减少， 可以降低储存电容 ， 减小耗电量， 进一步降低能耗。 存储电容可以由公式 C=s 来确定， 其中 ε d
为介电常数， S为公共电极与相应的像素电极重叠的面积， d为公共电极与像 素电极之间的距离。
由本发明的实施例提供的 ADS模式的液晶像素电极结构的光透过率的 特性曲线如图 5所示。 从图 5可见， 与现有技术相比， 相邻像素电极之间和 像素电极中间处的光透过率得到了提升。
本发明的实施例还提供一种阵列基板， 该阵列基板包括上述的液晶像素 电极结构。
本发明的实施例还提供一种显示装置，该显示装置包括上述的阵列基板。 以上所述仅是本发明的优选实施方式， 应当指出， 对于本技术领域的普 通技术人员来说， 在不脱离本发明技术原理的前提下， 还可以做出若干改进 和替换， 这些改进和替换也应被认为在本发明的保护范围内。

Claims

权利要求书
1、一种液晶像素电极结构， 包括第一像素电极和第二像素电极以及公共 电极， 其中所述第一像素电极和所述第二像素电极依次间隔排布， 且位于所 述公共电极上方， 所述第一像素电极和所述第二像素电极的驱动电压不同， 且分别与所述公共电极形成相等的电压差绝对值。
2、如权利要求 1所述的液晶像素电极结构，其中所述公共电极为狭缝电 极。
3、如权利要求 2所述的液晶像素电极结构，其中所述狭缝电极的开口的 位置对应于所述第一像素电极或者所述第二像素电极的位置。
4、如权利要求 3所述的液晶像素电极结构，其中所述开口的面积小于相 应的所述第一像素电极或者所述第二像素电极的面积。
5、如权利要求 1-4中任一项所述的液晶像素电极结构， 其中所述第一像 素电极和所述第二像素电极由 ITO材料制成。
6、如权利要求 1-5中任一项所述的液晶像素电极结构， 其中所述公共电 极由 ITO材料制成。
7、如权利要求 1-6中任一项所述的液晶像素电极结构，还包括位于所述 公共电极与所述第一像素电极及第二像素电极之间的钝化层。
8、一种阵列基板， 包括如权利要求 1-7中任一项所述的液晶像素电极结 构。
9、 一种显示装置， 包括如权利要求 8所述的阵列基板。
PCT/CN2013/077343 2013-04-07 2013-06-17 液晶像素电极结构、阵列基板及显示装置 WO2014166159A1 (zh)

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