WO2014162448A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

Info

Publication number
WO2014162448A1
WO2014162448A1 PCT/JP2013/059926 JP2013059926W WO2014162448A1 WO 2014162448 A1 WO2014162448 A1 WO 2014162448A1 JP 2013059926 W JP2013059926 W JP 2013059926W WO 2014162448 A1 WO2014162448 A1 WO 2014162448A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
film thickness
wiring
emitting device
light emitting
Prior art date
Application number
PCT/JP2013/059926
Other languages
English (en)
Japanese (ja)
Inventor
博樹 丹
賢一 奥山
雄司 齋藤
正宣 赤木
邦彦 白幡
Original Assignee
パイオニア株式会社
東北パイオニア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パイオニア株式会社, 東北パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2013/059926 priority Critical patent/WO2014162448A1/fr
Publication of WO2014162448A1 publication Critical patent/WO2014162448A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks

Definitions

  • the present invention relates to a light emitting device.
  • organic EL Organic Electroluminescence
  • An organic EL element is comprised by the transparent electrode, the other electrode arrange
  • Examples of the technology related to the organic EL element include those described in Patent Document 1 and Patent Document 2.
  • Patent Document 1 The technique described in Patent Document 1 is to form a resistance adjusting portion for adjusting the resistance value of the wiring electrode among the transparent electrodes in the wiring electrode.
  • Patent Document 2 describes a light-emitting element having an electrode composed of a metal line formed in a line shape and a polymer line covering the upper surface and side surfaces of the metal line.
  • the electrical resistance value at a specific portion of the electrode may be adjusted.
  • the inventor has found that the electrical resistance value at a specific location in the electrode can be adjusted, for example, by changing the film thickness of the electrode.
  • a spark is generated in the electrode due to a change in electrical resistance value based on a change in film thickness in the electrode. In this case, the operation reliability of the light emitting device is lowered.
  • An example of a problem to be solved by the present invention is to improve the operational reliability of a light emitting device.
  • the invention described in claim 1 A first electrode made of a conductive material; A second electrode at least partially facing the first electrode; An organic layer disposed between the first electrode and the second electrode; With The first electrode has a film thickness changing region in which the film thickness changes, The film thickness of the first electrode is a light emitting device that continuously changes in the film thickness change region.
  • FIG. 2 is a cross-sectional view showing an AA cross section of FIG. 1.
  • FIG. 2 is a cross-sectional view showing a BB cross section of FIG. 1.
  • FIG. 8 is a cross-sectional view showing a CC cross section of FIG. 7.
  • FIG. 8 is a cross-sectional view showing a DD cross section of FIG. 7. It is a figure which shows a part of light-emitting device shown in FIG. It is a figure which shows an example of a structure of the 1st electrode in 2nd Embodiment.
  • FIG. 1 is a plan view showing a light emitting device 10 according to the first embodiment.
  • 2 is a cross-sectional view showing the AA cross section of FIG. 1
  • FIG. 3 is a cross-sectional view showing the BB cross section of FIG. 4 and 5 are views showing a part of the light emitting device 10 shown in FIG.
  • FIG. 4 particularly shows the positional relationship between the transparent conductive film 110 and the lead-out wiring 134.
  • FIG. 5 particularly shows the configuration of the insulating layer 120.
  • FIG. 6 is a diagram illustrating an example of the configuration of the first electrode 112 in the present embodiment.
  • the light emitting device 10 includes a first electrode 112, a second electrode 152, and an organic layer 140.
  • the first electrode 112 is made of a conductive material.
  • the second electrode 152 is at least partially opposed to the first electrode 112.
  • the organic layer 140 is disposed between the first electrode 112 and the second electrode 152.
  • the first electrode 112 has a film thickness changing region 222 in which the film thickness changes. The film thickness of the first electrode 112 changes continuously in the film thickness change region 222.
  • the light emitting device 10 may be a lighting device.
  • the light-emitting device 10 is an illumination device
  • the light-emitting device 10 has a configuration in which, for example, a plurality of linear organic layers 140 having different emission colors are arranged repeatedly. Thereby, the illuminating device excellent in color rendering properties is realized.
  • the light-emitting device 10 that is a lighting device may have a planar organic layer 140.
  • the substrate 100 is, for example, a transparent substrate.
  • the substrate 100 can be a glass substrate. Thereby, the light emitting device 10 having excellent heat resistance and the like can be manufactured at low cost.
  • the substrate 100 may be a film-like substrate made of a resin material.
  • a display with particularly high flexibility can be realized.
  • the resin material constituting the film substrate include polyethylene terephthalate, polyethylene naphthalate, and polycarbonate.
  • the light emitting device 10 that is a display has a plurality of organic EL elements 20 arranged in an array on the substrate 100, for example.
  • the organic EL element 20 includes a first electrode 112 provided on the substrate 100, an organic layer 140 provided on the first electrode 112, and a second electrode 152 provided on the organic layer 140. ing. At this time, the organic layer 140 is disposed between the first electrode 112 and the second electrode 152.
  • a plurality of first electrodes 112 extending in the Y direction in the drawing and a plurality of second electrodes 152 extending in the X direction in the drawing are provided on the substrate.
  • the plurality of second electrodes 152 are provided so that a part of each second electrode 152 faces the first electrode 112.
  • the organic EL element 20 is formed in each portion where the first electrode 112 and the second electrode 152 overlap each other in plan view. As a result, a plurality of organic EL elements 20 arranged in an array are formed on the substrate 100.
  • the first electrode 112 serves as an anode of an organic EL element, for example.
  • the first electrode 112 is, for example, a transparent electrode that is transparent or translucent to the wavelength of light emitted from the light emitting layer 144 of the organic layer 140 described later.
  • the first electrode 112 is provided, for example, on the substrate 100 and in the pixel region 300 so as to extend linearly in the Y direction in the drawing.
  • On the substrate 100 for example, a plurality of first electrodes 112 that are separated from each other are arranged in a direction (X direction in the drawing) perpendicular to the extending direction of the first electrodes 112. At this time, the plurality of first electrodes 112 are separated from each other, for example.
  • the pixel region 300 is a region including a plurality of organic EL elements 20. In the example illustrated in FIG. 4, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • the first electrode 112 is configured to substantially include a conductive material.
  • the conductive material constituting the first electrode 112 include a transparent conductive material or a paste-like conductive material such as silver. Among these, a transparent conductive material is particularly preferable.
  • the 1st electrode 112 is comprised with a transparent conductive material, it can be set as the transparent electrode which has transparency.
  • the transparent conductive material includes, for example, an inorganic material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or a conductive polymer.
  • the transparent conductive material includes a conductive polymer
  • the first electrode 112 can be formed by a coating method.
  • the first electrode 112 in the step of forming the first electrode 112, it is possible to suppress a thermal load from being applied to other components such as the substrate 100.
  • the first electrode 112 is preferably a coating-type conductive film formed by applying a solution in which this inorganic material is dispersed in an organic solvent. Even in such a case, the first electrode 112 can be formed by a coating method.
  • the conductive polymer included in the transparent conductive material constituting the first electrode 112 is a conductive polymer including, for example, a ⁇ -conjugated conductive polymer and a polyanion.
  • the ⁇ -conjugated conductive polymer is not particularly limited.
  • a chain conductive polymer of phenylenes, polyparaphenylene sulfides, polyisothianaphthenes, or polythiazyl compounds can be used. From the viewpoint of conductivity, transparency, stability, etc., polythiophenes or polyanilines are preferable, and polyethylene dioxythiophene is particularly preferable.
  • Polyanions include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamido-2-methylpropane sulfonic acid, polyisoprene sulfonic acid, polyvinyl Carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacryl carboxylic acid, polymethacryl carboxylic acid, poly-2-acrylamido-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, or polyacrylic acid can be used.
  • the polyanion used in the present embodiment may be a homopolymer of these or two or more kinds of copolymers.
  • the transparent conductive material may further include a crosslinking agent, a leveling agent, an antifoaming agent, or the like.
  • the first electrode 112 has a film thickness changing region 222 in which the film thickness changes.
  • the film thickness of the first electrode 112 in the film thickness changing region 222 is gradually increased or gradually decreased from one end side to the other end side of the film thickness changing region 222, for example.
  • the film thickness of the first electrode 112 continuously changes in the film thickness changing region 222. That is, in the film thickness change region 222, a portion where the film thickness of the first electrode 112 changes discontinuously is not formed.
  • that the film thickness changes continuously includes, for example, a case where the film thickness changing region 222 includes a portion where the film thickness does not change.
  • the first electrode 112 has the film thickness changing region 222 in which the film thickness changes.
  • the film thickness of the first electrode 112 changes continuously in the film thickness changing region 222.
  • a portion in which the film thickness changes discontinuously occurs in the film thickness changing region 222. Can be suppressed. That is, it is possible to suppress a sudden change in the electric resistance value based on the discontinuous change in the film thickness in the first electrode 112. For this reason, generation
  • the present inventor has found that various effects can be obtained by adjusting the film thickness of the first electrode 112.
  • An example of such an effect is control of the brightness of the light emitting device, for example.
  • the first electrode 112 has the film thickness changing region 222 in which the film thickness changes. That is, the thickness of each part in the first electrode 112 can be made different from each other. Thereby, the electrical resistance value in the 1st electrode 112 can be adjusted about each part. Therefore, it is possible to control the brightness of the light emitting device by adjusting the electrical resistance value at a specific location in the first electrode 112.
  • the part that increases the luminance is selected according to the purpose. For example, it may be desirable to increase the luminance at a specific location in order to improve luminance unevenness in the light emitting device. In a light emitting device that emits a plurality of different colors, for example, it may be desirable to increase the luminance of pixels that emit a specific color. In the present embodiment, it is possible to form the film thickness changing region 222 in which the film thickness changes in the first electrode 112 in accordance with these purposes.
  • the organic layer 140 and the second electrode 152 are provided on the first electrode 112, for example, the organic layer 140 and the second electrode 152 are provided.
  • the organic layer 140 and the second electrode 152 may be stepped due to the change in film thickness that occurs in the first electrode 112.
  • the change in film thickness in the film thickness change region 222 can be made smooth as described above. For this reason, the level
  • the first electrode 112 is formed such that, for example, the film thickness changing region 222 constitutes only a part of the first electrode 112.
  • the surface facing the second electrode 152 in the portion other than the film thickness changing region 222 in the first electrode 112 has a flat surface parallel to the substrate 100, for example.
  • FIG. 6 illustrates a case where the film thickness changing region 222 is formed in a part of the first electrode 112 and a region having a flat upper surface is formed in the other part.
  • the first electrode 112 may be formed so that the entire area of the first electrode 112 is constituted by the film thickness changing region 222. In this case, one surface of the first electrode 112 facing the second electrode 152 does not have a flat surface parallel to the substrate 100.
  • the first electrode 112 may have a plurality of film thickness changing regions 222, for example.
  • each film thickness change region 222 in the first electrode 112 is provided such that the film thickness of the first electrode 112 gradually increases or decreases in one direction.
  • it is preferable that the first electrode 112 is formed so that the film thickness of the first electrode 112 continuously changes in all the film thickness change regions 222.
  • a plurality of film thickness change regions 222 can be formed in the first electrode 112 such that one surface of the first electrode 112 that faces the second electrode 152 has an uneven curved surface.
  • the portion located in the film thickness changing region 222 is an inclined surface that is inclined with respect to the plane of the substrate 100, for example.
  • the inclined surface can be a smooth surface having no discontinuous steps.
  • the surface of the first electrode 112 that faces the second electrode 152 is the upper surface of the first electrode 112.
  • the portion located in the film thickness change region 222 has an angle from the normal 208 to the plane of the substrate 100 of 15 ° or more. Thereby, the change of the electrical resistance value in the film thickness change region 222 in the first electrode 112 can be further alleviated.
  • the angle ⁇ from the normal 208 to the plane of the substrate 100 is 15 ° or more in the portion located in the film thickness change region 222 on the upper surface of the first electrode 112.
  • the film thickness of the first portion 202 having the maximum film thickness in the film thickness change region 222 is D1
  • the film thickness of the second portion 204 having the minimum film thickness is D2.
  • the length of the region sandwiched between the first portion 202 and the second portion 204 is L.
  • (D1-D2) / L is preferably 3.73 or less.
  • the change in the film thickness of the first electrode 112 in the film thickness change region 222 becomes gentle, and the change in the electrical resistance value in the film thickness change region 222 can be further alleviated.
  • the first electrode is set so that (D1-D2) / L satisfies 3.73 or less regardless of which film thickness change region 222 is selected.
  • 112 is preferably formed.
  • the first wiring 114 is provided on the substrate 100.
  • the case where the 1st wiring 114 is electrically connected with the 1st electrode 112 is illustrated.
  • a plurality of first wirings 114 connected to different first electrodes 112 are provided on the substrate 100.
  • the plurality of first electrodes 112 in the present embodiment are connected to the lead-out wiring 134 via the first wiring 114, respectively.
  • the first electrode 112 is connected to the first wiring 114 at one end.
  • the first wiring 114 is made of, for example, a transparent conductive material.
  • the first wiring 114 can have transparency.
  • a transparent conductive material which comprises the 1st wiring 114 it is possible to use the same thing as the transparent conductive material which comprises the 1st electrode 112, for example.
  • the first electrode 112 and the first wiring 114 are provided integrally on the substrate 100, for example.
  • the first wiring 114 and the first electrode 112 are constituted by the transparent conductive film 110, for example.
  • a portion of the transparent conductive film 110 located in the pixel region 300 including the plurality of organic EL elements 20 becomes the first electrode 112.
  • a portion of the transparent conductive film 110 located outside the pixel region 300 becomes the first wiring 114.
  • the first electrode 112 is connected to the lead wiring 134 through the first wiring 114.
  • a plurality of transparent conductive films 110 extending in the Y direction in the drawing are provided on the substrate 100.
  • the plurality of transparent conductive films 110 are arranged in the X direction in the figure so as to be separated from each other.
  • a portion located on the end side connected to the extraction wiring 134 with respect to the pixel region 300 indicated by the alternate long and short dash line is the first wiring 114.
  • the first electrode 112 In the first electrode 112, a voltage drop occurs as the distance from the first wiring 114 increases. Then, due to the voltage drop at the first electrode 112, the luminance is reduced.
  • the first electrode 112 is formed such that the film thickness of the first electrode 112 in the film thickness changing region 222 increases as the distance from the one end connected to the first wiring 114 increases. That is, the first electrode 112 can be formed such that the electrical resistance value of the first electrode 112 decreases as the distance from the first wiring 114 increases. Thereby, it is possible to improve luminance unevenness due to a voltage drop in the first electrode 112.
  • the structure of the film thickness change region 222 in the first electrode 112 is not limited to the one that increases as the distance from the one end connected to the first wiring 114 in the first electrode 112 increases.
  • the configuration of the film thickness change region 222 can be appropriately selected according to the purpose of increasing the luminance in the light emitting device.
  • the film thickness changing region 222 is formed at a position separated from the first wiring 114, for example.
  • FIG. 6 illustrates a case where the film thickness changing region 222 is formed at a position separated from the first wiring 114.
  • one surface of the first electrode 112 facing the second electrode 152 between the first wiring 114 and the film thickness changing region 222 has a flat surface parallel to the plane of the substrate 100, for example.
  • the film thickness change region 222 may be formed so as to be adjacent to the first wiring 114.
  • a lead wiring 134 is provided on the substrate 100 .
  • the lead wiring 134 is connected to the first wiring 114 .
  • a plurality of lead wires 134 arranged in the X direction in the figure are provided on the substrate 100 so as to be separated from each other.
  • Each lead-out wiring 134 is connected to the first wiring 114.
  • the plurality of first wires 114 are connected to the outside via the lead wires 134, respectively.
  • a light emission / non-light emission signal is supplied to the organic EL element 20 via the first wiring 114 and the lead-out wiring 134.
  • the first wiring 114 is formed so that one end of the first wiring 114 overlaps a part of the lead wiring 134.
  • the first wiring 114 is formed so as to cover a part of each of the upper surface and the side surface of the lead wiring 134, for example.
  • the lead wiring 134 is configured to include a metal material.
  • a metal material having an electric resistance value lower than that of the conductive material constituting the first electrode 112 is used.
  • the lead wiring 134 and the first electrode 112 are made of different materials. Examples of the metal material contained in the lead wiring 134 include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, and Pd.
  • the lead wire 134 includes one or more of these metal materials.
  • An insulating layer 120 is provided on the substrate 100 so as to cover the first electrode 112, for example.
  • the insulating layer 120 is provided so as to cover the first electrode 112 and the first wiring 114 and a part of each of the extraction wiring 164 described later.
  • the insulating layer 120 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by exposure and development.
  • the insulating layer 120 may be made of a resin material other than polyimide resin, and may be epoxy resin or acrylic resin.
  • the insulating layer 120 is provided with a plurality of first openings 122, for example.
  • the first openings 122 are formed so as to form a matrix, for example.
  • the plurality of first openings 122 are formed so as to be located on the first electrode 112.
  • the plurality of first openings 122 are provided at positions overlapping the second electrode 152 extending in a direction orthogonal to the first electrode 112 (X direction in the figure), for example. For this reason, the plurality of first openings 122 are arranged to form a matrix.
  • the insulating layer 120 is provided with a plurality of second openings 124, for example. As shown in FIG. 5, the second opening 124 is provided, for example, so as to be located on the lead wiring 164.
  • the plurality of second openings 124 are arranged along one side of the matrix formed by the first openings 122. When viewed in a direction along this one side (for example, Y direction in the figure), the second openings 124 are arranged at the same interval as the first openings 122.
  • a partition wall 170 is provided on the insulating layer 120. As shown in FIG. 1, the partition 170 is provided so as to extend in the X direction in the drawing. That is, the partition 170 is formed along the extending direction of the second electrode 152. A plurality of partition walls 170 are provided so as to be arranged in the Y direction in the drawing.
  • the partition wall 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • the partition wall 170 may be made of a resin material other than a polyimide resin, or may be an epoxy resin or an acrylic resin.
  • the partition wall 170 has, for example, a trapezoidal cross-sectional shape (reverse trapezoidal shape). That is, the width of the upper surface of the partition wall 170 is larger than the width of the bottom surface of the partition wall 170, for example. In this case, even when the plurality of second electrodes 152 are collectively formed by a sputtering method, a vapor deposition method, or the like, the plurality of second electrodes 152 positioned between the adjacent partition walls 170 can be separated from each other. It becomes. Therefore, the second electrode 152 can be easily formed.
  • the planar shape of the partition wall 170 is not limited to that shown in FIG. Therefore, by changing the planar shape of the partition 170, the planar pattern of the plurality of second electrodes 152 that are separated from each other by the partition 170 can be freely changed.
  • an organic layer 140 is formed in the first opening 122.
  • the organic layer 140 is disposed between the first electrode 112 and the second electrode 152.
  • the organic layer 140 is configured by a stacked body in which, for example, a hole injection layer 142, a light emitting layer 144, and an electron injection layer 146 are sequentially stacked.
  • the hole injection layer 142 is in contact with the first electrode 112
  • the electron injection layer 146 is in contact with the second electrode 152.
  • the organic layer 140 is sandwiched between the first electrode 112 and the second electrode 152.
  • a hole transport layer may be formed between the hole injection layer 142 and the light emitting layer 144, or an electron transport layer may be formed between the light emitting layer 144 and the electron injection layer 146. Further, the organic layer 140 may not include the hole injection layer 142.
  • a partition 170 is provided on the insulating layer 120.
  • the organic layers 140 provided in each of a plurality of regions sandwiched between adjacent partition walls 170 are separated from each other in the Y direction in the drawing.
  • a laminated film made of the same material as the organic layer 140 is formed on the partition wall 170, for example.
  • each layer constituting the organic layer 140 is provided so as to be continuous between adjacent first openings 122 in the X direction in the drawing in which the partition 170 extends.
  • a second electrode 152 is provided on the organic layer 140.
  • the 2nd electrode 152 becomes a cathode of an organic EL element, for example.
  • the second electrode 152 is provided, for example, so as to extend linearly in the X direction in the drawing.
  • On the substrate 100 for example, a plurality of second electrodes 152 spaced apart from each other are arranged in a direction (Y direction in the drawing) perpendicular to the extending direction of the second electrodes 152. At this time, the plurality of second electrodes 152 are provided so that a part of each second electrode 152 faces the first electrode 112.
  • the light emitting device 10 includes a plurality of second electrodes 152 that are provided so that each part thereof faces the first electrode 112 extending in the Y direction in the drawing. At this time, each first electrode 112 faces a plurality of second electrodes 152.
  • the light emitting device 10 includes a plurality of organic layers 140 disposed between the first electrode 112 and the second electrode 152 facing each other. That is, one first electrode 112 extending in the Y direction in the drawing constitutes a plurality of organic EL elements 20 arranged in the Y direction in the drawing.
  • the first electrode 112 has the film thickness changing region 222 as described above.
  • the film thickness of the first electrode 112 can be varied among the organic EL elements 20.
  • the luminance can be controlled for each organic EL element 20.
  • the film thickness of the first electrode 112 can be made different between the portions in the organic EL element 20. Thereby, it is also possible to control the luminance at each location in the organic EL element 20.
  • the second electrode 152 is made of a metal material such as tin, magnesium, indium, calcium, aluminum, copper, silver, or an alloy thereof. One of these materials may be used alone, or two or more arbitrary combinations may be used. Note that in the case where the second electrode 152 is a cathode, the second electrode 152 is preferably made of a conductive material having a work function smaller than that of the first electrode 112 that is an anode.
  • a second wiring 154 is provided on the substrate 100.
  • the second wiring 154 is connected to one of the first electrode 112 and the second electrode 152 that is not connected to the first wiring 114.
  • one of the first electrode 112 and the second electrode 152 that is connected to the second wiring 154 is connected to the outside via the second wiring 154.
  • a case where the second wiring 154 is provided on the organic layer 140 and connected to the second electrode 152 is exemplified.
  • a plurality of second wirings 154 connected to the different second electrodes 152 are provided on the organic layer 140.
  • the plurality of second electrodes 152 in the present embodiment are connected to the outside via the second wirings 154, respectively.
  • part of the second wiring 154 is embedded in the second opening 124, and part of the second wiring 154 is connected to an extraction wiring 164 described later.
  • the second wiring 154 is made of, for example, a metal material.
  • a metal material constituting the second wiring 154 for example, the same material as the second electrode 152 can be used.
  • the second electrode 152 and the second wiring 154 are provided integrally on the organic layer 140, for example, and constitute the conductive film 150.
  • a part of the conductive film 150 located in the pixel region 300 including the plurality of organic EL elements 20 becomes the second electrode 152.
  • a portion of the conductive film 150 located outside the pixel region 300 serves as the second wiring 154.
  • the second electrode 152 is connected to the lead wiring 164 via the second wiring 154, for example.
  • a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • a plurality of conductive films 150 extending in the X direction in the drawing are provided on the organic layer 140.
  • the plurality of conductive films 150 are arranged in the Y direction in the drawing so as to be separated from each other.
  • a portion located on the end side connected to the extraction wiring 164 with respect to the pixel region 300 becomes the second wiring 154.
  • the plurality of conductive films 150 are collectively formed on the organic layer 140 using, for example, a sputtering method or a vapor deposition method. Even in such a case, since the partition 170 is formed on the insulating layer 120 in this embodiment, the conductive film 150 provided in each of a plurality of regions sandwiched between adjacent partitions 170 is illustrated in the drawing. They are separated from each other in the Y direction. As a result, it is possible to form a plurality of conductive films 150 arranged in the Y direction in the drawing and extending in the X direction in the drawing so as to be separated from each other. At this time, a film made of the same material as the conductive film 150 is formed over the partition wall 170.
  • a lead wiring 164 is provided on the substrate 100.
  • the second wiring 154 is connected to the outside through the lead wiring 164. Therefore, the second electrode 152 is connected to the outside via the second wiring 154 and the lead wiring 164, and a signal is supplied.
  • the lead wiring 164 is made of, for example, a metal material.
  • the metal material constituting the lead wiring 164 for example, the same material as the lead wiring 134 can be used. In this case, the lead wiring 164 can be formed simultaneously with the lead wiring 134. For this reason, it can suppress that the manufacturing process number of the light-emitting device 10 increases.
  • the lead wiring 134 is formed on the substrate 100.
  • the lead wiring 134 is formed on the substrate 100 using, for example, a coating method, a sputtering method, or a vapor deposition method.
  • a coating method used in the said process For example, the inkjet method, screen printing method, spray coating method, letterpress printing method, gravure printing method, or dispenser coating method is mentioned.
  • the coating liquid used when forming the lead wiring 134 by a coating method includes, for example, a binder resin and an organic solvent.
  • the binder resin for example, a cellulose resin, an epoxy resin, or an acrylic resin can be used.
  • the organic solvent for example, a hydrocarbon solvent or an alcohol solvent can be used.
  • the metal particles contained in the coating liquid are, for example, Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, or Pd.
  • the coating liquid contains one or more of these metal particles.
  • the lead wiring 164 is formed on the substrate 100 simultaneously with the step of forming the lead wiring 134.
  • the lead wiring 164 is formed by the same method and material as the lead wiring 134, for example.
  • the transparent conductive film 110 constituting the first electrode 112 and the first wiring 114 is formed on the substrate 100.
  • the transparent conductive film 110 is formed by, for example, applying a transparent conductive material-containing coating solution on the substrate 100 and drying it.
  • the transparent conductive film 110 is formed to cover a part of the lead wiring 134, for example.
  • the transparent conductive material-containing coating solution is not particularly limited, but is applied onto the substrate 100 using, for example, an ink jet method, a screen printing method, a relief printing method, a gravure printing method, a die coat, a spin coat, or a spray.
  • the transparent conductive material-containing coating solution used in the step of forming the first conductive film 110 includes, for example, an organic solvent and water in addition to the above-described transparent conductive material.
  • the organic solvent for example, an alcohol solvent can be used.
  • the process of forming the transparent conductive film 110 is performed as follows, for example. First, the transparent conductive material-containing coating solution is coated on the substrate 100 so as to cover a part of the lead wiring 134 (first coating process). Thereby, the transparent conductive film 110 constituting the first electrode 112 and the first wiring 114 is formed on the substrate 100. Next, a transparent conductive material coating solution is further applied onto the portion of the transparent conductive film 110 that constitutes the first electrode 112 (second coating step). As a result, a film thickness changing region 222 in which the film thickness changes is formed in the first electrode 112.
  • coating process is not specifically limited, It is possible to select suitably according to the film thickness of the 1st electrode 112 calculated
  • the transparent conductive film 110 formed on the substrate 100 is dried.
  • the transparent conductive film 110 is formed by a coating method, by adjusting the number of times of coating the coating liquid, the content of the conductive polymer in the coating liquid, the type of the organic solvent, and the like.
  • the present invention is not limited to this, and the first electrode 112 and the first wiring 114 are different processes. May be formed. In this case, in the step of forming the first electrode 112, by adjusting the number of times of applying the coating liquid, the content of the conductive polymer in the coating liquid, the type of the organic solvent, etc. The first electrode 112 whose film thickness continuously changes can be realized.
  • the transparent conductive film 110 is dried.
  • the transparent conductive material contains a conductive polymer
  • the conductive film 110 is dried to increase the cohesive force of the conductive polymer, and the first electrode 112 and the first wiring 114 can be made strong films. it can.
  • the transparent conductive film 110 is cured by performing a heat treatment on the transparent conductive film 110.
  • the transparent conductive material constituting the transparent conductive film 110 includes a photosensitive material
  • the transparent conductive film 110 may be cured by UV irradiation. The structure obtained at this stage is shown in FIG.
  • the insulating layer 120 is formed on the substrate 100, the first electrode 112, the first wiring 114, and the lead wiring 164.
  • the insulating layer 120 is patterned into a predetermined shape using dry etching or wet etching. As a result, a plurality of first openings 122 and a plurality of second openings 124 are formed in the insulating layer 120. At this time, the plurality of first openings 122 are formed, for example, such that a part of the first electrode 112 is exposed from each first opening 122.
  • a partition wall 170 is formed on the insulating layer 120.
  • the partition wall 170 is obtained by patterning an insulating film provided over the insulating layer 120 into a predetermined shape using dry etching or wet etching.
  • the cross-sectional shape of the partition wall 170 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development. The structure obtained at this stage is shown in FIG.
  • a hole injection layer 142, a light emitting layer 144, and an electron injection layer 146 are sequentially formed in the first opening 122. These are formed using, for example, a coating method or a vapor deposition method. Thereby, the organic layer 140 is formed.
  • the conductive film 150 constituting the second electrode 152 and the second wiring 154 is formed on the organic layer 140.
  • the conductive film 150 is formed so that, for example, a part of the conductive film 150 is located in the second opening 124.
  • the conductive film 150 is formed using, for example, a vapor deposition method or a sputtering method.
  • the organic EL element 20 composed of the first electrode 112, the second electrode 152, and the organic layer 140 sandwiched therebetween is formed on the substrate 100.
  • the light emitting device 10 is formed in this way.
  • the first electrode 112 has the film thickness changing region 222 in which the film thickness changes.
  • the film thickness of the first electrode 112 changes continuously in the film thickness changing region 222.
  • a portion in which the film thickness changes discontinuously occurs in the film thickness changing region 222. Can be suppressed. That is, it is possible to suppress a sudden change in the electric resistance value based on the discontinuous change in the film thickness in the first electrode 112. For this reason, generation
  • FIG. 7 is a plan view showing the light emitting device 12 according to the second embodiment, and corresponds to FIG. 1 according to the first embodiment.
  • 8 is a cross-sectional view showing a CC cross section of FIG. 7
  • FIG. 9 is a cross-sectional view showing a DD cross section of FIG.
  • FIG. 10 is a diagram showing a part of the light emitting device 12 shown in FIG. FIG. 10 particularly shows the positional relationship between the transparent conductive film 110 and the extraction wiring 134.
  • FIG. 11 is a diagram illustrating an example of the configuration of the first electrode 112 in the present embodiment.
  • the light emitting device 12 according to the present embodiment has the same configuration as that of the light emitting device 10 according to the first embodiment except for the configuration of the first electrode 112 and the lead-out wiring 134.
  • the configuration of the light emitting device 12 will be described.
  • the first electrodes 112 are arranged on the substrate 100 in the pixel region 300 in a matrix, for example.
  • the plurality of first electrodes 112 arranged in a matrix are separated from each other.
  • the pixel region 300 is a region including a plurality of organic EL elements 20. In the example illustrated in FIG. 7, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • the first electrode 112 is made of, for example, a conductive material.
  • the first electrode 112 is particularly preferably formed of a transparent conductive film 110 formed of, for example, a transparent conductive material. In this case, the first electrode 112 may have transparency.
  • the first electrode 112 has a film thickness changing region 222 in which the film thickness changes. Further, the film thickness of the first electrode 112 continuously changes in the film thickness changing region 222. Thereby, it is possible to suppress a sudden change in the electrical resistance value based on the discontinuous change in the film thickness in the first electrode 112. Therefore, the occurrence of sparks in the first electrode 112 can be suppressed, and the operation reliability of the light emitting device 12 can be improved. Moreover, in this embodiment, the film thickness of the 1st electrode 112 can be varied mutually between each location in the organic EL element 20. FIG. Thereby, it becomes possible to control the brightness
  • the first wiring 114 constituting the light emitting device 10 according to the first embodiment is not provided.
  • the lead-out wiring 134 extends in the Y direction in the figure.
  • a plurality of lead wires 134 arranged in the X direction in the figure are provided on the substrate 100 so as to be separated from each other.
  • Each lead-out wiring 134 is connected to a plurality of first electrodes 112 arranged in the Y direction. For this reason, the plurality of first electrodes 112 are each connected to the outside via the lead wiring 134.
  • a light emission / non-light emission signal is supplied to the organic EL element 20 through the lead wiring 134.
  • the first electrode 112 is connected to the lead wiring 134 at one end. As shown in FIG. 9, a portion of the lead-out wiring 134 that is joined to the first electrode 112 is located, for example, in a region where the organic EL element 20 is formed in a plan view.
  • the first electrode 112 extends in the X direction in FIG.
  • the shape of the first electrode 112 is not particularly limited and can be selected as appropriate in accordance with the design of the organic EL element 20. For example, it is rectangular.
  • the first electrode 112 is formed, for example, such that the film thickness of the first electrode 112 in the film thickness changing region 222 increases as the distance from the one end connected to the lead wiring 134 increases. That is, the first electrode 112 can be formed such that the electrical resistance value of the first electrode 112 decreases as the distance from the lead wire 134 increases. Thereby, it is possible to improve luminance unevenness due to a voltage drop in the first electrode 112.
  • the structure of the film thickness change region 222 in the first electrode 112 is not limited to the one that increases as the distance from the one end connected to the 134 of the first electrode 112 increases. The configuration of the film thickness change region 222 can be appropriately selected according to the purpose of increasing the luminance in the light emitting device.
  • the film thickness changing region 222 is formed at a position separated from the lead wiring 134, for example.
  • FIG. 11 the case where the film thickness change region 222 is formed at a position separated from the lead-out wiring 134 is illustrated.
  • one surface of the first electrode 112 facing the second electrode 152 between the lead wiring 134 and the film thickness changing region 222 has a flat surface parallel to the plane of the substrate 100, for example.
  • the film thickness change region 222 may be formed so as to be adjacent to the lead-out wiring 134.
  • the insulating layer 120 is formed so as to cover the lead wiring 134, for example.
  • the insulating layer 120 is provided so as to cover a part of each of the lead wiring 134 and the lead wiring 164.
  • a plurality of first openings 122 are formed in the insulating layer 120 so as to form a matrix, for example.
  • the first electrode 112 is formed in the first opening 122.
  • a plurality of first electrodes 112 arranged in a matrix on the substrate 100 are formed. Further, as shown in FIGS. 8 and 9, the plurality of first electrodes 112 are separated from each other by the insulating layer 120.
  • the first opening 122 is formed, for example, so as to overlap a part of the lead wiring 134 in a plan view. In this case, a part of the lead wiring 134 that overlaps the first opening 122 in plan view is connected to the first electrode 112 formed in the first opening 122.
  • the insulating layer 120 is made of the same material as that of the first embodiment, for example.
  • the partition 170, the organic layer 140, the second electrode 152, the second wiring 154, and the extraction wiring 164 in the present embodiment have the same configuration as that of the first embodiment, for example.
  • the first electrode 112 has the film thickness changing region 222 in which the film thickness changes.
  • the film thickness of the first electrode 112 changes continuously in the film thickness changing region 222. For this reason, like the first embodiment, the occurrence of sparks in the first electrode can be suppressed, and the operation reliability of the light emitting device can be improved.
  • Example 1 First, a metal film made of silver was formed on a glass substrate by a sputtering method. Next, this metal film was patterned into a line shape by dry etching to form a lead wiring. Next, the transparent conductive material-containing coating solution was applied by an inkjet method so as to cover a part of the lead wiring, thereby forming a transparent conductive film (first coating step). Thereby, the 1st electrode and 1st wiring which consist of transparent conductive films were integrally formed. Next, the transparent conductive material-containing coating solution was applied twice on a part of the first electrode (second coating step). As a result, a film thickness change region in which the film thickness gradually increases as the distance from the first wiring increases in the first electrode.
  • the transparent conductive material-containing coating solution poly (3,4-ethylenedioxythiophene) / polystyrene sulfonate (PEDOT-PSS, CLEVIOS PH510 (manufactured by Heraeus)) in a solvent. A solution obtained by dispersing the solution was used. Next, the transparent conductive film was dried. Thus, a structure including the first electrode, the first wiring, and the lead wiring was produced. The structure thus obtained was applied to the light emitting device according to the first embodiment.
  • PEDOT-PSS polystyrene sulfonate
  • CLEVIOS PH510 manufactured by Heraeus
  • Example 1 the 1st electrode had the film thickness change area

Abstract

　Ce dispositif électroluminescent (10) est équipé d'une première électrode, d'une deuxième électrode (152) et d'une couche organique (140). La première électrode est constituée d'un matériau électro-conducteur. Au moins une partie de la deuxième électrode (152) fait face à la première électrode. La couche organique (140) est positionnée entre la première électrode et la deuxième électrode (152). La première électrode possède une région d'épaisseur de film variable dans laquelle l'épaisseur du film varie. En outre, l'épaisseur de film de la première électrode varie de manière continue dans la région d'épaisseur de film variable.
PCT/JP2013/059926 2013-04-01 2013-04-01 Dispositif électroluminescent WO2014162448A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/059926 WO2014162448A1 (fr) 2013-04-01 2013-04-01 Dispositif électroluminescent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/059926 WO2014162448A1 (fr) 2013-04-01 2013-04-01 Dispositif électroluminescent

Publications (1)

Publication Number Publication Date
WO2014162448A1 true WO2014162448A1 (fr) 2014-10-09

Family

ID=51657781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/059926 WO2014162448A1 (fr) 2013-04-01 2013-04-01 Dispositif électroluminescent

Country Status (1)

Country Link
WO (1) WO2014162448A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111670607A (zh) * 2017-12-05 2020-09-15 佳能株式会社 顶发射有机el元件及用于制造顶发射有机el元件的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285523A (ja) * 2004-03-30 2005-10-13 Nippon Seiki Co Ltd 有機ｅｌパネル
JP2007108672A (ja) * 2005-10-14 2007-04-26 Lg Electron Inc 発光素子
WO2008126269A1 (fr) * 2007-03-30 2008-10-23 Pioneer Corporation Dispositif émetteur de lumière
JP2009048808A (ja) * 2007-08-15 2009-03-05 Panasonic Electric Works Co Ltd 発光装置
JP2012099244A (ja) * 2010-10-29 2012-05-24 National Institute Of Advanced Industrial & Technology 電極、電極の製造方法、有機エレクトロルミネッセンス（ｅｌ）装置、同装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285523A (ja) * 2004-03-30 2005-10-13 Nippon Seiki Co Ltd 有機ｅｌパネル
JP2007108672A (ja) * 2005-10-14 2007-04-26 Lg Electron Inc 発光素子
WO2008126269A1 (fr) * 2007-03-30 2008-10-23 Pioneer Corporation Dispositif émetteur de lumière
JP2009048808A (ja) * 2007-08-15 2009-03-05 Panasonic Electric Works Co Ltd 発光装置
JP2012099244A (ja) * 2010-10-29 2012-05-24 National Institute Of Advanced Industrial & Technology 電極、電極の製造方法、有機エレクトロルミネッセンス（ｅｌ）装置、同装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111670607A (zh) * 2017-12-05 2020-09-15 佳能株式会社 顶发射有机el元件及用于制造顶发射有机el元件的方法
CN111670607B (zh) * 2017-12-05 2023-11-10 佳能株式会社 顶发射有机el元件及用于制造顶发射有机el元件的方法

Similar Documents

Publication Publication Date Title
US9680123B2 (en) Light emitting device, electrode structure and manufacturing method thereof
JP2010267428A (ja) 機能膜形成方法および機能膜形成装置
JP2010282903A (ja) 有機ｅｌディスプレイパネル
JP6463354B2 (ja) 発光装置
WO2014162448A1 (fr) Dispositif électroluminescent
WO2014162453A1 (fr) Structure de liaison, et dispositif luminescent
JP6283022B2 (ja) 光学装置
JP6266598B2 (ja) 光学装置
JP6266599B2 (ja) 光学装置
WO2014162447A1 (fr) Structure de jonction et dispositif électroluminescent
WO2014162449A1 (fr) Structure de jonction et dispositif électroluminescent
WO2014162451A1 (fr) Structure d'assemblage et dispositif électroluminescent
JP2014203525A (ja) 接合構造および発光装置
WO2014162450A1 (fr) Dispositif électroluminescent
WO2014162454A1 (fr) Structure de liaison, et dispositif luminescent
WO2017029889A1 (fr) Panneau électroluminescent organique, dispositif d'éclairage, et procédé de fabrication d'un panneau électroluminescent organique
WO2014162446A1 (fr) Structure de jonction et dispositif électroluminescent
KR100839379B1 (ko) 유기 전계 발광 표시 장치
JP2014203526A (ja) 接合構造および発光装置
WO2013186918A1 (fr) Dispositif électroluminescent organique
JP6441595B2 (ja) 発光装置
WO2017122360A1 (fr) Dispositif électroluminescent
JP2020074328A (ja) 発光装置
JP2015046263A (ja) 発光装置
JP2014203527A (ja) 接合構造および発光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13881316

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13881316

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP