WO2014162447A1 - Structure de jonction et dispositif électroluminescent - Google Patents

Structure de jonction et dispositif électroluminescent Download PDF

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Publication number
WO2014162447A1
WO2014162447A1 PCT/JP2013/059925 JP2013059925W WO2014162447A1 WO 2014162447 A1 WO2014162447 A1 WO 2014162447A1 JP 2013059925 W JP2013059925 W JP 2013059925W WO 2014162447 A1 WO2014162447 A1 WO 2014162447A1
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WIPO (PCT)
Prior art keywords
conductive film
electrode
wiring
film
film thickness
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PCT/JP2013/059925
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English (en)
Japanese (ja)
Inventor
雄司 齋藤
賢一 奥山
博樹 丹
正宣 赤木
邦彦 白幡
Original Assignee
パイオニア株式会社
東北パイオニア株式会社
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Application filed by パイオニア株式会社, 東北パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2013/059925 priority Critical patent/WO2014162447A1/fr
Publication of WO2014162447A1 publication Critical patent/WO2014162447A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes

Definitions

  • the present invention relates to a junction structure and a light emitting device.
  • organic EL Organic Electroluminescence
  • An organic EL element is comprised by the transparent electrode, the other electrode arrange
  • Examples of the technology related to the organic EL element include those described in Patent Document 1 and Patent Document 2.
  • Patent Document 1 The technique described in Patent Document 1 is to adjust the resistance value of the transparent wiring by adjusting the thickness of the transparent wiring connecting the transparent electrode and the input electrode.
  • Patent Document 2 describes a light-emitting element having an electrode composed of a metal line formed in a line shape and a polymer line covering the upper surface and side surfaces of the metal line.
  • a region in which the film thickness changes may be provided in the first conductive film.
  • the connection reliability in the junction structure is lowered due to local current concentration based on the change in the film thickness.
  • An example of a problem to be solved by the present invention is to improve connection reliability in a joint structure composed of two conductive films joined to each other.
  • a first conductive film made of a conductive material and a second conductive film made of a metal material are bonded to each other;
  • the first conductive film has a non-stacked portion that does not overlap the second conductive film in plan view,
  • the non-stacked portion has a film thickness change region in which the film thickness decreases as the distance from the second conductive film increases.
  • the film thickness of the non-stacked portion is a joint structure that continuously changes in the film thickness change region.
  • a light emitting device having the joint structure according to any one of claims 1 to 3,
  • An organic EL element having a first electrode, a second electrode, and an organic layer disposed between the first electrode and the second electrode;
  • a first wiring electrically connected to the first electrode and configured by the first conductive film;
  • An organic EL element comprising: a first electrode composed of the first conductive film; a second electrode; and an organic layer disposed between the first electrode and the second electrode; A lead wire bonded to the first electrode and configured by the second conductive film; It is a light-emitting device provided with.
  • FIG. 2 is a cross-sectional view showing an AA cross section of FIG. 1.
  • FIG. 2 is a cross-sectional view showing a BB cross section of FIG. 1.
  • It is a figure which shows a part of light-emitting device shown in FIG. It is a figure which shows a part of light-emitting device shown in FIG.
  • FIG. 9 is a cross-sectional view showing a CC cross section of FIG. 8.
  • FIG. 9 is a cross-sectional view showing a DD cross section of FIG. 8. It is a figure which shows a part of light-emitting device shown in FIG.
  • FIG. 1 is a plan view showing a light emitting device 10 according to the first embodiment.
  • 2 is a cross-sectional view showing the AA cross section of FIG. 1
  • FIG. 3 is a cross-sectional view showing the BB cross section of FIG. 4 and 5 are views showing a part of the light emitting device 10 shown in FIG.
  • FIG. 4 the positional relationship between the first conductive film 110 and the second conductive film 130 is particularly shown.
  • FIG. 5 particularly shows the configuration of the insulating layer 120.
  • 6 and 7 are diagrams illustrating an example of a bonding structure 200 including the first conductive film 110 and the second conductive film 130 according to the present embodiment.
  • the bonding structure 200 is formed by bonding a first conductive film 110 made of a conductive material and a second conductive film 130 made of a metal material.
  • the first conductive film 110 has a non-stacked portion 220 that does not overlap the second conductive film 130 in plan view.
  • the non-stacked portion 220 has a film thickness changing region 222 whose film thickness decreases as the distance from the second conductive film 130 increases. The film thickness of the non-stacked portion 220 changes continuously in the film thickness changing region 222.
  • the light emitting device 10 has a joint structure 200.
  • the light emitting device 10 includes an organic EL element 20, a first wiring 114, and a lead wiring 134.
  • the organic EL element 20 includes a first electrode 112, a second electrode 152, and an organic layer 140 disposed between the first electrode 112 and the second electrode 152.
  • the first wiring 114 is electrically connected to the first electrode 112 and is configured by the first conductive film 110.
  • the lead-out wiring 134 is joined to the first wiring 114 and is configured by the second conductive film 130.
  • the bonding structure 200 is a bonding structure in which the first conductive film 110 and the second conductive film 130 are bonded to each other.
  • the bonding between the first conductive film 110 and the second conductive film 130 includes a case where another structure is interposed between the first conductive film 110 and the second conductive film 130.
  • the bonding structure 200 is formed on the substrate 100, for example. In this case, the first conductive film 110 and the second conductive film 130 are formed on the substrate 100.
  • the junction structure 200 constitutes a light emitting device including, for example, an organic EL element.
  • the light emitting device includes, for example, an organic EL element, a first wiring that is electrically connected to an electrode that constitutes the organic EL element, and a lead wiring that is electrically connected to the first wiring.
  • an electrical signal for controlling light emission / non-light emission is supplied from the outside to the electrodes constituting the organic EL element via the lead wiring and the first wiring.
  • the 1st electrically conductive film 110 among the joining structures 200 comprises the 1st wiring connected to the electrode which comprises an organic EL element, for example.
  • the second conductive film 130 of the bonding structure 200 constitutes, for example, a lead wiring. In this case, the junction structure 200 is formed between the first wiring and the lead-out wiring.
  • the first conductive film 110 substantially includes a conductive material.
  • the conductive material constituting the first conductive film 110 include a transparent conductive material or a paste-like conductive material such as silver. Among these, a transparent conductive material is particularly preferable.
  • the first conductive film 110 is made of a transparent conductive material, the first conductive film 110 is a transparent conductive film.
  • the first conductive film 110 has a shape extending in one direction parallel to the plane of the substrate 100, for example.
  • the transparent conductive material includes, for example, an inorganic material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or a conductive polymer.
  • the transparent conductive material includes a conductive polymer
  • the first conductive film 110 can be formed using a coating method. In this case, in the step of forming the first conductive film 110, it is possible to suppress a thermal load from being applied to other components such as the substrate 100.
  • the first conductive film 110 is preferably a coating-type conductive film formed by applying a solution in which this inorganic material is dispersed in an organic solvent. . Even in such a case, the first conductive film 110 can be formed by a coating method.
  • the conductive polymer included in the transparent conductive material constituting the first conductive film 110 is a conductive polymer including, for example, a ⁇ -conjugated conductive polymer and a polyanion.
  • the ⁇ -conjugated conductive polymer is not particularly limited.
  • a chain conductive polymer of phenylenes, polyparaphenylene sulfides, polyisothianaphthenes, or polythiazyl compounds can be used. From the viewpoint of conductivity, transparency, stability, etc., polythiophenes or polyanilines are preferable, and polyethylene dioxythiophene is particularly preferable.
  • Polyanions include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamido-2-methylpropane sulfonic acid, polyisoprene sulfonic acid, polyvinyl Carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacryl carboxylic acid, polymethacryl carboxylic acid, poly-2-acrylamido-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, or polyacrylic acid can be used.
  • the polyanion used in the present embodiment may be a homopolymer of these or two or more kinds of copolymers.
  • the transparent conductive material may further include a crosslinking agent, a leveling agent, an antifoaming agent, or the like.
  • the second conductive film 130 includes a metal material.
  • a metal material having a lower electrical resistivity than the conductive material constituting the first conductive film 110 is used.
  • the first conductive film 110 and the second conductive film 130 are made of different materials.
  • the metal material included in the second conductive film 130 include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, and Pd.
  • the second conductive film 130 includes one or more of these metal materials.
  • the first conductive film 110 has a non-stacked portion 220 that does not overlap the second conductive film 130 in plan view.
  • the first conductive film 110 is provided so that a part of the first conductive film 110 overlaps the second conductive film 130.
  • the first conductive film 110 includes a stacked portion that overlaps with the second conductive film 130 in a plan view and a non-stacked portion 220 that does not overlap with the second conductive film 130 in a plan view. Note that the first conductive film 110 does not need to have a stacked portion overlapping the second conductive film 130.
  • the non-stacked portion 220 has a film thickness changing region 222 whose film thickness decreases as the distance from the second conductive film 130 increases. That is, the film thickness of the non-stacked portion 220 in the film thickness change region 222 gradually decreases as the distance from the second conductive film 130 increases. Further, the film thickness of the non-laminated portion 220 continuously changes in the film thickness changing region 222. That is, in the film thickness change region 222, a portion where the film thickness of the non-stacked portion 220 changes discontinuously is not formed. In this specification, that the film thickness changes continuously includes, for example, a case where the film thickness changing region 222 includes a portion where the film thickness does not change.
  • the non-stacked portion 220 that does not overlap the second conductive film 130 in the plan view of the first conductive film 110 has the film thickness change region 222.
  • the film thickness of the non-stacked portion 220 continuously changes in the film thickness changing region 222.
  • a portion where the film thickness changes discontinuously occurs in the film thickness changing region 222. Can be suppressed. That is, it is possible to suppress a sudden change in the electric resistance value based on the discontinuous change in the film thickness in the first conductive film 110. For this reason, local current concentration in the first conductive film 110 can be reduced, and the connection reliability in the junction structure 200 composed of the first conductive film 110 and the second conductive film 130 bonded to each other can be improved. .
  • the first conductive film 110 is provided, for example, such that the film thickness changing region 222 constitutes only a part of the non-stacked portion 220.
  • the film thickness changing region 222 is formed, for example, at a position away from the second conductive film 130 on the substrate 100.
  • the film thickness of the portion located between the second conductive film 130 and the film thickness changing region 222 in the non-stacked portion 220 can be increased.
  • the 1st electrically conductive film 110 comprises wiring, an electrode, etc.
  • the first conductive film 110 may be formed so that the film thickness changing region 222 is adjacent to the second conductive film 130.
  • the first conductive film 110 may be formed so that the entire non-stacked portion 220 is constituted by the film thickness changing region 222.
  • FIG. 6 illustrates the case where the film thickness changing region 222 is formed at a position on the substrate 100 that is separated from the second conductive film 130.
  • the film thickness of the non-stacked portion 220 has a certain size in a region sandwiched between the second conductive film 130 and the film thickness changing region 222.
  • the upper surface of the non-stacked portion 220 has a flat surface parallel to the plane of the substrate 100.
  • the non-stacked portion 220 has a film thickness change region 224 in which the film thickness increases as the distance from the second conductive film 130 increases between the second conductive film 130 and the film thickness change region 222. ing. At this time, the film thickness of the non-stacked portion 220 in the film thickness changing region 224 gradually increases as the distance from the second conductive film 130 increases. In the example shown in FIG. 7, the film thickness of the non-stacked portion 220 continuously changes in the film thickness change region 224.
  • the film thickness change region 224 a portion where the film thickness of the non-stacked portion 220 changes discontinuously is not formed. In this case, in the film thickness change region 224, it is possible to mitigate the change in electrical resistance value based on the film thickness change.
  • the non-stacked portion 220 has a plurality of film thickness change regions in which the film thickness increases or decreases as the distance from the second conductive film 130 increases between the second conductive film 130 and the film thickness change region 222 in plan view. You may have.
  • the first conductive film 110 be formed so that the film thickness of the non-stacked portion 220 continuously changes in all film thickness change regions.
  • the film thickness of at least a portion of the non-stacked portion 220 located between the second conductive film 130 and the film thickness changing region 222 is, for example, a stacked portion overlapping the second conductive film 130 of the first conductive film 110. And the total thickness of the second conductive film 130 or more.
  • the film thickness of the non-stacked portion 220 has, for example, a certain size in a region located on the side opposite to the second conductive film 130 when viewed from the film thickness changing region 222.
  • the upper surface of the non-stacked portion 220 has a flat surface parallel to the plane of the substrate 100 in the region located on the opposite side of the second conductive film 130 from the film thickness changing region 222.
  • the non-stacked portion 220 has a film thickness change region in which the film thickness increases or decreases as the distance from the second conductive film 130 increases in a region located on the opposite side of the second conductive film 130 from the film thickness change region 222. You may have.
  • a portion of the upper surface of the non-stacked portion 220 located in the film thickness changing region 222 is, for example, an inclined surface that is inclined with respect to the plane of the substrate 100.
  • the inclined surface can be a smooth surface having no discontinuous steps.
  • the portion of the upper surface of the non-stacked portion 220 located in the film thickness changing region 222 has an angle from the normal 208 to the plane of the substrate 100 of 15 ° or more. Thereby, the change of the electrical resistance value in the film thickness change region 222 in the first conductive film 110 can be further alleviated. For this reason, it becomes possible to further improve the connection reliability in the junction structure 200 composed of the first conductive film 110 and the second conductive film 130 bonded to each other.
  • the angle ⁇ from the normal 208 to the plane of the substrate 100 is 15 ° or more in the portion located in the film thickness change region 222 on the upper surface of the non-stacked portion 220.
  • the film thickness of the thick film portion 204 having the maximum film thickness in the film thickness change region 222 is D1
  • the film thickness of the thin film portion 202 having the minimum film thickness is D2.
  • the film thickness of the thick film part 204 can be made sufficiently larger than the film thickness of the thin film part 202.
  • the film thickness of the non-stacked portion 220 between the film thickness changing region 222 and the second conductive film 130 can be sufficiently increased.
  • the 1st electrically conductive film 110 comprises wiring, an electrode, etc.
  • the film thickness in the portion located on the side opposite to the second conductive film 130 as viewed from the film thickness change region 222 can be made sufficiently small, and the transparency can be improved.
  • the bonding structure 200 in which the first conductive film 110 and the second conductive film 130 are bonded to each other is formed as follows.
  • the second conductive film 130 is formed over the substrate 100.
  • the second conductive film 130 is formed using, for example, a coating method, a sputtering method, or a vapor deposition method.
  • a coating method used in the said process For example, the inkjet method, screen printing method, spray coating method, letterpress printing method, gravure printing method, or dispenser coating method is mentioned.
  • coating method contains binder resin and an organic solvent, for example.
  • the binder resin for example, a cellulose resin, an epoxy resin, or an acrylic resin can be used.
  • the organic solvent for example, a hydrocarbon solvent or an alcohol solvent can be used.
  • the metal particles contained in the coating liquid are, for example, Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, or Pd.
  • the coating liquid contains one or more of these metal particles.
  • a first conductive film 110 is formed over the substrate 100.
  • the first conductive film 110 is formed, for example, by applying a transparent conductive material-containing coating solution on the substrate 100 and drying it.
  • the first conductive film 110 is formed so as to cover a part of the second conductive film 130, for example.
  • the transparent conductive material-containing coating solution is not particularly limited, but is applied onto the substrate 100 using, for example, an ink jet method, a screen printing method, a relief printing method, a gravure printing method, a die coat, a spin coat, or a spray.
  • the transparent conductive material-containing coating solution used in the step of forming the first conductive film 110 includes, for example, an organic solvent and water in addition to the above-described transparent conductive material.
  • the organic solvent for example, an alcohol solvent can be used.
  • the first conductive film 110 may be formed by applying a paste-like conductive material such as silver on the substrate 100 and drying it.
  • the process of forming the first conductive film 110 is performed as follows, for example. First, a transparent conductive material-containing coating solution is applied on the substrate 100 so as to cover a part of the second conductive film 130 (first coating step). Thereby, the first conductive film 110 is formed on the substrate 100. Next, a transparent conductive material coating solution is further applied on the non-laminated portion 220 that does not overlap the second conductive film 130 in the first conductive film 110 (second coating step). As a result, a film thickness changing region 222 whose film thickness decreases as the distance from the second conductive film 130 increases in the non-stacked portion 220.
  • coating process is not specifically limited, It is possible to select suitably according to the film thickness of the non-lamination part 220 calculated
  • the first conductive film 110 formed on the substrate 100 is dried.
  • the first conductive film 110 is formed by a coating method, by adjusting the number of times the coating liquid is applied, the content of the conductive polymer in the coating liquid, the type of solvent, and the like.
  • the joining structure 200 is formed in this way.
  • the light emitting device 10 may be a lighting device.
  • the light-emitting device 10 is an illumination device
  • the light-emitting device 10 has a configuration in which, for example, a plurality of linear organic layers 140 having different emission colors are arranged repeatedly. Thereby, the illuminating device excellent in color rendering properties is realized.
  • the light-emitting device 10 that is a lighting device may have a planar organic layer 140.
  • the substrate 100 is, for example, a transparent substrate.
  • the substrate 100 can be a glass substrate. Thereby, the light emitting device 10 having excellent heat resistance and the like can be manufactured at low cost.
  • the substrate 100 may be a film-like substrate made of a resin material.
  • a display with particularly high flexibility can be realized.
  • the resin material constituting the film substrate include polyethylene terephthalate, polyethylene naphthalate, and polycarbonate.
  • the light emitting device 10 that is a display has a plurality of organic EL elements 20 arranged in an array on the substrate 100, for example.
  • the organic EL element 20 includes a first electrode 112 provided on the substrate 100, an organic layer 140 provided on the first electrode 112, and a second electrode 152 provided on the organic layer 140. ing. At this time, the organic layer 140 is disposed between the first electrode 112 and the second electrode 152.
  • a plurality of first electrodes 112 extending in the Y direction in the drawing and a plurality of second electrodes 152 extending in the X direction in the drawing are provided on the substrate 100.
  • the organic EL element 20 is formed in each portion where the first electrode 112 and the second electrode 152 overlap each other in plan view. As a result, a plurality of organic EL elements 20 arranged in an array are formed on the substrate 100.
  • the first electrode 112 serves as an anode of an organic EL element, for example.
  • the first electrode 112 is, for example, a transparent electrode that is transparent or translucent to the wavelength of light emitted from the light emitting layer 144 of the organic layer 140 described later.
  • the first electrode 112 is provided, for example, on the substrate 100 and in the pixel region 300 so as to extend linearly in the Y direction in the drawing.
  • On the substrate 100 for example, a plurality of first electrodes 112 that are separated from each other are arranged in a direction (X direction in the drawing) perpendicular to the extending direction of the first electrodes 112. At this time, the plurality of first electrodes 112 are separated from each other, for example.
  • the pixel region 300 is a region including a plurality of organic EL elements 20. In the example illustrated in FIG. 4, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • the first electrode 112 is made of, for example, a transparent conductive material.
  • the transparent conductive material constituting the first electrode 112 for example, the same transparent conductive material as that constituting the first conductive film 110 can be used. For this reason, the 1st electrode 112 can have transparency.
  • the first wiring 114 is provided on the substrate 100.
  • the case where the 1st wiring 114 is electrically connected with the 1st electrode 112 is illustrated.
  • a plurality of first wirings 114 connected to different first electrodes 112 are provided on the substrate 100.
  • the plurality of first electrodes 112 in the present embodiment are connected to the lead-out wiring 134 via the first wiring 114, respectively.
  • the first wiring 114 is constituted by the first conductive film 110 made of a conductive material.
  • the first wiring 114 formed of the first conductive film 110 can have transparency.
  • the first electrode 112 and the first wiring 114 are provided integrally on the substrate 100, for example.
  • the first wiring 114 and the first electrode 112 are constituted by the first conductive film 110, for example.
  • a portion of the first conductive film 110 located in the pixel region 300 including the plurality of organic EL elements 20 becomes the first electrode 112.
  • a portion of the first conductive film 110 located outside the pixel region 300 becomes the first wiring 114.
  • the first electrode 112 is connected to the lead wiring 134 through the first wiring 114.
  • a plurality of first conductive films 110 extending in the Y direction in the drawing are provided on the substrate 100.
  • the plurality of first conductive films 110 are arranged in the X direction in the drawing so as to be separated from each other. A portion of the first conductive film 110 located on the end side connected to the extraction wiring 134 from the pixel region 300 indicated by the alternate long and short dash line is the first wiring 114.
  • a lead wiring 134 is provided on the substrate 100 .
  • the lead wiring 134 is connected to the first wiring 114 .
  • a plurality of lead wires 134 arranged in the X direction in the figure are provided on the substrate 100 so as to be separated from each other.
  • Each lead-out wiring 134 is connected to the first wiring 114.
  • the plurality of first wires 114 are connected to the outside via the lead wires 134, respectively.
  • a light emission / non-light emission signal is supplied to the organic EL element 20 via the first wiring 114 and the lead-out wiring 134.
  • the lead-out wiring 134 is comprised by the 2nd electrically conductive film 130 comprised with a metal material. Therefore, when the lead wiring 134 is connected to the first wiring 114, the first wiring 114 configured by the first conductive film 110 and the lead wiring 134 configured by the second conductive film 130 are bonded to each other. Thus, the joint structure 200 is formed. In the example illustrated in FIG. 4, the joint structure 200 is formed in a portion surrounded by a broken line.
  • the first wiring 114 is connected to the lead wiring 134 at one end. At this time, the first wiring 114 is bonded to, for example, the lead wiring 134 at the one end portion to form the bonding structure 200.
  • the first wiring 114 extends in the first direction when viewed from the lead wiring 134. In the present embodiment, the first direction refers to the Y direction in the figure, for example.
  • the first wiring 114 is configured by the first conductive film 110.
  • the lead-out wiring 134 is configured by the second conductive film 130.
  • the first wiring 114 has the non-stacked portion 220 including the film thickness change region 222.
  • the film thickness of the non-lamination part 220 changes continuously in the film thickness change area
  • the first wiring 114 is formed so that one end of the first wiring 114 overlaps a part of the lead wiring 134.
  • the first wiring 114 is formed so as to cover a part of each of the upper surface and the side surface of the lead wiring 134, for example. In this case, the first wiring 114 has a stacked portion that overlaps the lead wire 134 and a non-stacked portion 220 that does not overlap the lead wire 134.
  • the first wiring 114 has a film thickness changing region 222 in the non-stacked portion 220.
  • the film thickness of the first wiring 114 is reduced in a region located on the opposite side of the second conductive film 130 as viewed from the film thickness changing region 222. That is, the film thickness in the portion of the first wiring 114 connected to the first electrode 112 can be reduced.
  • the film thickness of the first electrode 112 is reduced by reducing the film thickness of the portion of the first wiring 114 connected to the first electrode 112. It is easy to make it smaller. Therefore, it becomes easy to improve the transparency of the first electrode 112 constituting the organic EL element 20.
  • An insulating layer 120 is provided on the substrate 100 so as to cover the first electrode 112, for example.
  • the insulating layer 120 is provided so as to cover the first electrode 112 and the first wiring 114 and a part of each of the extraction wiring 164 described later.
  • the insulating layer 120 is a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by exposure and development.
  • the insulating layer 120 may be made of a resin material other than polyimide resin, and may be epoxy resin or acrylic resin.
  • the insulating layer 120 is provided with a plurality of first openings 122, for example.
  • the first openings 122 are formed so as to form a matrix, for example.
  • the plurality of first openings 122 are formed so as to be located on the first electrode 112.
  • the plurality of first openings 122 are provided at positions overlapping the second electrode 152 extending in a direction orthogonal to the first electrode 112 (X direction in the figure), for example. For this reason, the plurality of first openings 122 are arranged to form a matrix.
  • the insulating layer 120 is provided with a plurality of second openings 124, for example. As shown in FIG. 5, the second opening 124 is provided, for example, so as to be located on the lead wiring 164.
  • the plurality of second openings 124 are arranged along one side of the matrix formed by the first openings 122. When viewed in a direction along this one side (for example, Y direction in the figure), the second openings 124 are arranged at the same interval as the first openings 122.
  • a partition wall 170 is provided on the insulating layer 120. As shown in FIG. 1, the partition 170 is provided so as to extend in the X direction in the drawing. That is, the partition 170 is formed along the extending direction of the second electrode 152. A plurality of partition walls 170 are provided so as to be arranged in the Y direction in the drawing.
  • the partition wall 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed.
  • the partition wall 170 may be made of a resin material other than a polyimide resin, or may be an epoxy resin or an acrylic resin.
  • the partition wall 170 has, for example, a trapezoidal cross-sectional shape (reverse trapezoidal shape). That is, the width of the upper surface of the partition wall 170 is larger than the width of the bottom surface of the partition wall 170, for example. In this case, even when the plurality of second electrodes 152 are collectively formed by a sputtering method, a vapor deposition method, or the like, the plurality of second electrodes 152 positioned between the adjacent partition walls 170 can be separated from each other. It becomes. Therefore, the second electrode 152 can be easily formed.
  • the planar shape of the partition wall 170 is not limited to that shown in FIG. Therefore, by changing the planar shape of the partition 170, the planar pattern of the plurality of second electrodes 152 that are separated from each other by the partition 170 can be freely changed.
  • an organic layer 140 is formed in the first opening 122.
  • the organic layer 140 is configured by a stacked body in which, for example, a hole injection layer 142, a light emitting layer 144, and an electron injection layer 146 are sequentially stacked.
  • the hole injection layer 142 is in contact with the first electrode 112
  • the electron injection layer 146 is in contact with the second electrode 152.
  • the organic layer 140 is sandwiched between the first electrode 112 and the second electrode 152.
  • a hole transport layer may be formed between the hole injection layer 142 and the light emitting layer 144, or an electron transport layer may be formed between the light emitting layer 144 and the electron injection layer 146.
  • the organic layer 140 may not include the hole injection layer 142.
  • a partition 170 is provided on the insulating layer 120.
  • the organic layers 140 provided in each of a plurality of regions sandwiched between adjacent partition walls 170 are separated from each other in the Y direction in the drawing.
  • a laminated film made of the same material as the organic layer 140 is formed on the partition wall 170, for example.
  • each layer constituting the organic layer 140 is provided so as to be continuous between adjacent first openings 122 in the X direction in the drawing in which the partition 170 extends.
  • a second electrode 152 is provided on the organic layer 140.
  • the 2nd electrode 152 becomes a cathode of an organic EL element, for example.
  • the second electrode 152 is provided, for example, so as to extend linearly in the X direction in the drawing.
  • On the substrate 100 for example, a plurality of second electrodes 152 spaced apart from each other are arranged in a direction (Y direction in the drawing) perpendicular to the extending direction of the second electrodes 152.
  • the second electrode 152 is made of a metal material such as tin, magnesium, indium, calcium, aluminum, copper, silver, or an alloy thereof. One of these materials may be used alone, or two or more arbitrary combinations may be used. Note that in the case where the second electrode 152 is a cathode, the second electrode 152 is preferably made of a conductive material having a work function smaller than that of the first electrode 112 that is an anode.
  • a second wiring 154 is provided on the substrate 100.
  • the second wiring 154 is connected to one of the first electrode 112 and the second electrode 152 that is not connected to the first wiring 114.
  • one of the first electrode 112 and the second electrode 152 that is connected to the second wiring 154 is connected to the outside via the second wiring 154.
  • a case where the second wiring 154 is provided on the organic layer 140 and connected to the second electrode 152 is exemplified.
  • a plurality of second wirings 154 connected to the different second electrodes 152 are provided on the organic layer 140.
  • the plurality of second electrodes 152 in the present embodiment are connected to the outside via the second wirings 154, respectively.
  • part of the second wiring 154 is embedded in the second opening 124, and part of the second wiring 154 is connected to an extraction wiring 164 described later.
  • the second wiring 154 is made of, for example, a metal material.
  • a metal material constituting the second wiring 154 for example, the same material as the second electrode 152 can be used.
  • the second electrode 152 and the second wiring 154 are provided integrally on the organic layer 140, for example, and constitute the conductive film 150.
  • a part of the conductive film 150 located in the pixel region 300 including the plurality of organic EL elements 20 becomes the second electrode 152.
  • a portion of the conductive film 150 located outside the pixel region 300 serves as the second wiring 154.
  • the second electrode 152 is connected to the lead wiring 164 via the second wiring 154, for example.
  • a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • a plurality of conductive films 150 extending in the X direction in the drawing are provided on the organic layer 140.
  • the plurality of conductive films 150 are arranged in the Y direction in the drawing so as to be separated from each other.
  • a portion located on the end side connected to the extraction wiring 164 with respect to the pixel region 300 becomes the second wiring 154.
  • the plurality of conductive films 150 are collectively formed on the organic layer 140 using, for example, a sputtering method or a vapor deposition method. Even in such a case, since the partition 170 is formed on the insulating layer 120 in this embodiment, the conductive film 150 provided in each of a plurality of regions sandwiched between adjacent partitions 170 is illustrated in the drawing. They are separated from each other in the Y direction. As a result, it is possible to form a plurality of conductive films 150 arranged in the Y direction in the drawing and extending in the X direction in the drawing so as to be separated from each other. At this time, a film made of the same material as the conductive film 150 is formed over the partition wall 170.
  • a lead wiring 164 is provided on the substrate 100.
  • the second wiring 154 is connected to the outside through the lead wiring 164. Therefore, the second electrode 152 is connected to the outside via the second wiring 154 and the lead wiring 164, and a signal is supplied.
  • the lead wiring 164 is made of, for example, a metal material.
  • the metal material constituting the lead wiring 164 for example, the same material as the lead wiring 134 can be used. In this case, the lead wiring 164 can be formed simultaneously with the lead wiring 134. For this reason, it can suppress that the manufacturing process number of the light-emitting device 10 increases.
  • the lead wiring 134 is formed on the substrate 100.
  • the lead wiring 134 is formed on the substrate 100 using, for example, a coating method, a sputtering method, or a vapor deposition method.
  • the lead wiring 134 is configured by the second conductive film 130.
  • the lead wiring 134 is formed using, for example, the above-described method for forming the second conductive film 130 and the material forming the second conductive film 130.
  • the lead wiring 164 is formed on the substrate 100 simultaneously with the step of forming the lead wiring 134.
  • the lead wiring 164 is formed by the same method and material as the lead wiring 134, for example.
  • the first wiring 114 is formed on the substrate 100.
  • the first wiring 114 is formed by, for example, applying a transparent conductive material-containing coating solution on the substrate 100 and drying it.
  • the first wiring 114 is the first conductive film 110.
  • the first wiring 114 is formed using, for example, the above-described method for forming the first conductive film 110 and the material constituting the first conductive film 110.
  • the first wiring 114 constituted by the first conductive film 110 and the lead wiring 134 constituted by the second conductive film 130 are bonded to each other to form the bonded structure 200.
  • the bonding structure 200 is formed using, for example, the method for forming the bonding structure 200 described above.
  • the first electrode 112 connected to the first wiring 114 is formed together with the first wiring 114.
  • the first electrode 112 is formed by the first conductive film 110 integrally with the first wiring 114, for example.
  • the first wiring 114 is dried.
  • the transparent conductive material includes a conductive polymer
  • the first wiring 114 is dried to increase the cohesive force of the conductive polymer, so that the first wiring 114 can be a strong film.
  • the first wiring 114 is cured by performing a heat treatment on the first wiring 114.
  • the transparent conductive material constituting the first wiring 114 includes a photosensitive material
  • the first wiring 114 may be cured by UV irradiation. The structure obtained at this stage is shown in FIG.
  • the insulating layer 120 is formed on the substrate 100, the first electrode 112, the first wiring 114, and the lead wiring 164.
  • the insulating layer 120 is patterned into a predetermined shape using dry etching or wet etching. As a result, a plurality of first openings 122 and a plurality of second openings 124 are formed in the insulating layer 120. At this time, the plurality of first openings 122 are formed, for example, such that a part of the first electrode 112 is exposed from each first opening 122.
  • a partition wall 170 is formed on the insulating layer 120.
  • the partition wall 170 is obtained by patterning an insulating film provided over the insulating layer 120 into a predetermined shape using dry etching or wet etching.
  • the cross-sectional shape of the partition wall 170 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development. The structure obtained at this stage is shown in FIG.
  • a hole injection layer 142, a light emitting layer 144, and an electron injection layer 146 are sequentially formed in the first opening 122. These are formed using, for example, a coating method or a vapor deposition method. Thereby, the organic layer 140 is formed.
  • the conductive film 150 constituting the second electrode 152 and the second wiring 154 is formed on the organic layer 140.
  • the conductive film 150 is formed so that, for example, a part of the conductive film 150 is located in the second opening 124.
  • the conductive film 150 is formed using, for example, a vapor deposition method or a sputtering method.
  • the organic EL element 20 composed of the first electrode 112, the second electrode 152, and the organic layer 140 sandwiched therebetween is formed on the substrate 100.
  • the light emitting device 10 is formed in this way.
  • the non-stacked portion 220 that does not overlap the second conductive film 130 in the plan view of the first conductive film 110 has the film thickness changing region 222.
  • the film thickness of the non-stacked portion 220 continuously changes in the film thickness changing region 222.
  • a portion in which the film thickness changes discontinuously occurs in the film thickness changing region 222 can be suppressed. That is, it is possible to suppress a sudden change in the electric resistance value based on the discontinuous change in the film thickness in the first conductive film 110.
  • the device 10 can be realized. Thereby, the connection reliability between the 1st electrode 112 and the extraction wiring 134 can be improved. In addition, the operational reliability of the light emitting device 10 can be improved.
  • FIG. 8 is a plan view showing the light emitting device 12 according to the second embodiment, and corresponds to FIG. 1 according to the first embodiment.
  • 9 is a cross-sectional view showing a CC cross section of FIG. 8
  • FIG. 10 is a cross-sectional view showing a DD cross section of FIG.
  • FIG. 11 is a diagram showing a part of the light emitting device 12 shown in FIG. FIG. 11 particularly shows the positional relationship between the first conductive film 110 and the second conductive film 130.
  • the first conductive film 110 in the bonding structure 200 constitutes an electrode constituting, for example, an organic EL element.
  • the second conductive film 130 forms, for example, a lead wiring that is electrically connected to an electrode that forms the organic EL element.
  • the junction structure 200 is formed between the electrode constituting the organic EL element and the lead wiring.
  • the non-laminated portion 220 including the film thickness changing region 222 in which the film thickness continuously changes is formed.
  • the light emitting device 12 has the same configuration as that of the light emitting device 10 according to the first embodiment, except for the configuration of the first electrode 112 and the lead wiring 134.
  • the light emitting device 12 has a joint structure 200.
  • the light emitting device 12 includes the organic EL element 20 and a lead wiring 134.
  • the organic EL element 20 includes a first electrode 112 configured by the first conductive film 110, a second electrode 152, and an organic layer 140 disposed between the first electrode 112 and the second electrode 152. is doing.
  • the lead wiring 134 is joined to the first electrode 112 and is constituted by the second conductive film 130.
  • the first electrodes 112 are arranged on the substrate 100 in the pixel region 300 in a matrix, for example.
  • the plurality of first electrodes 112 arranged in a matrix are separated from each other.
  • the pixel region 300 is a region including a plurality of organic EL elements 20. In the example illustrated in FIG. 8, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • the first electrode 112 is composed of a first conductive film 110 composed of a conductive material. When the first conductive film 110 is made of a transparent conductive material, the first electrode 112 made of the first conductive film 110 can have transparency.
  • the first wiring 114 constituting the light emitting device 10 according to the first embodiment is not provided.
  • the lead-out wiring 134 extends in the Y direction in the figure.
  • a plurality of lead wires 134 arranged in the X direction in the figure are provided on the substrate 100 so as to be separated from each other.
  • Each lead-out wiring 134 is connected to a plurality of first electrodes 112 arranged in the Y direction. For this reason, the plurality of first electrodes 112 are each connected to the outside via the lead wiring 134.
  • a light emission / non-light emission signal is supplied to the organic EL element 20 through the lead wiring 134.
  • the lead-out wiring 134 is comprised by the 2nd electrically conductive film 130 comprised with a metal material.
  • the first electrode 112 configured by the first conductive film 110 and the lead-out wiring 134 configured by the second conductive film 130 are bonded to each other to form the bonded structure 200.
  • the joint structure 200 is formed in a portion surrounded by a broken line.
  • the first electrode 112 is connected to the lead wiring 134 at one end. At this time, the first electrode 112 is bonded to, for example, the lead wiring 134 at the one end portion to form the bonded structure 200. As shown in FIG. 10, a portion of the lead-out wiring 134 that is joined to the first electrode 112 is located, for example, in a region where the organic EL element 20 is formed in plan view.
  • the first electrode 112 extends in the second direction when viewed from the lead wiring 134. In the present embodiment, the second direction refers to, for example, the X direction in the figure.
  • the shape of the first electrode 112 is not particularly limited and can be selected as appropriate in accordance with the design of the organic EL element 20. For example, it is rectangular.
  • the first electrode 112 is composed of the first conductive film 110.
  • the lead-out wiring 134 is configured by the second conductive film 130. Therefore, the first electrode 112 has the non-stacked portion 220 including the film thickness changing region 222. And the film thickness of the non-lamination part 220 changes continuously in the film thickness change area
  • the first electrode 112 is formed so that one end of the first electrode 112 overlaps part of the lead-out wiring 134.
  • the first electrode 112 is formed so as to cover, for example, a part of each of the upper surface and the side surface of the lead-out wiring 134. In this case, the first electrode 112 has a stacked portion that overlaps the lead wiring 134 and a non-stacked portion 220 that does not overlap the lead wiring 134.
  • the first electrode 112 has a film thickness changing region 222 in the non-laminated portion 220.
  • the film thickness of the first electrode 112 decreases in a region located on the side opposite to the second conductive film 130 as viewed from the film thickness change region 222. That is, it is possible to reduce the film thickness in at least a part of the region constituting the pixel in the first electrode 112. Therefore, it becomes easy to improve the transparency of the first electrode 112 constituting the organic EL element 20.
  • the insulating layer 120 is formed so as to cover the lead wiring 134, for example.
  • the insulating layer 120 is provided so as to cover a part of each of the lead wiring 134 and the lead wiring 164.
  • a plurality of first openings 122 are formed in the insulating layer 120 so as to form a matrix, for example.
  • the first electrode 112 is formed in the first opening 122.
  • a plurality of first electrodes 112 arranged in a matrix on the substrate 100 are formed. Further, as shown in FIGS. 9 and 10, the plurality of first electrodes 112 are separated from each other by the insulating layer 120.
  • the first opening 122 is formed, for example, so as to overlap a part of the lead wiring 134 in a plan view. In this case, a part of the lead wiring 134 that overlaps the first opening 122 in plan view is connected to the first electrode 112 formed in the first opening 122.
  • the insulating layer 120 is made of the same material as that of the first embodiment, for example.
  • the partition 170, the organic layer 140, the second electrode 152, the second wiring 154, and the extraction wiring 164 in the present embodiment have the same configuration as that of the first embodiment, for example.
  • connection reliability between the first conductive film 110 and the second conductive film 130 can be improved as in the first embodiment.
  • the light emitting device 12 including the first electrode 112 configured by the first conductive film 110 and the lead-out wiring 134 configured by the second conductive film 130 can be realized. Thereby, the connection reliability between the 1st electrode 112 and the extraction wiring 134 can be improved. In addition, the operational reliability of the light emitting device can be improved.
  • Example 1 First, a metal film made of silver was formed on a glass substrate by a sputtering method. Next, this metal film was patterned into a line shape by dry etching to form a second conductive film. Next, the transparent conductive material-containing coating solution was applied by an inkjet method so as to cover a part of the second conductive film, thereby forming a first conductive film (first coating step). Next, the transparent conductive material-containing coating liquid was applied twice on the non-laminated portion that did not overlap the second conductive film in the first conductive film (second coating step). Thereby, the film thickness change region where the film thickness decreases as the distance from the second conductive film increases in the non-laminated portion.
  • the transparent conductive material-containing coating solution poly (3,4-ethylenedioxythiophene) / polystyrene sulfonate (PEDOT-PSS, CLEVIOS PH510 (manufactured by Heraeus)) in a solvent. A solution obtained by dispersing the solution was used. Subsequently, the transparent conductive material containing coating liquid apply
  • Example 1 the 1st electrically conductive film had the non-lamination part containing the film thickness change area

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne une structure de jonction obtenue en joignant un premier film conducteur (110) et un second film conducteur (130) entre eux. Le premier film conducteur (110) qui constitue la structure de jonction est constitué d'un matériau conducteur. Le second film conducteur (130) qui constitue la structure de jonction est constitué d'un matériau métallique. Le premier film conducteur (110) a une partie non stratifiée ne chevauchant pas le second film conducteur (130). La partie non stratifiée a une région de variation d'épaisseur de film dans laquelle l'épaisseur de film diminue à mesure que la distance par rapport au second film conducteur (130) augmente. L'épaisseur de film de la partie non stratifiée varie en continu le long de la région de variation d'épaisseur de film.
PCT/JP2013/059925 2013-04-01 2013-04-01 Structure de jonction et dispositif électroluminescent WO2014162447A1 (fr)

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Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/059925 WO2014162447A1 (fr) 2013-04-01 2013-04-01 Structure de jonction et dispositif électroluminescent

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311230A (ja) * 2003-04-08 2004-11-04 Pioneer Electronic Corp 発光ディスプレイパネル及びその製造方法
WO2010150648A1 (fr) * 2009-06-25 2010-12-29 コニカミノルタホールディングス株式会社 Panneau électronique organique et son procédé de fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311230A (ja) * 2003-04-08 2004-11-04 Pioneer Electronic Corp 発光ディスプレイパネル及びその製造方法
WO2010150648A1 (fr) * 2009-06-25 2010-12-29 コニカミノルタホールディングス株式会社 Panneau électronique organique et son procédé de fabrication

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